蓝宝石化学机械抛光及清洗技术研究现状与存在问题分析论文

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1 绪论......................................................................................................................................1 1.1 课题研究的意义 ..........................................................................................................1 1.2 蓝宝石的材料特性.......................................................................................................1 1.2.1 蓝宝石的晶体结构 .............................................................................................1 1.2.2 单晶蓝宝石的机械性质 ......................................................................................1 1.2.3 单晶蓝宝石与二氧化硅的固相化学反应..............................................................2 1.3 蓝宝石化学机械抛光原理 ............................................................................................2 1.4 蓝宝石化学机械抛光研究现状 .....................................................................................3 1.5 蓝宝石清洗技术研究现状 ............................................................................................4 1.6 课题研究的内容 ..........................................................................................................4 2 蓝宝石晶片化学机械抛光运动参数分析 .................................................................................5 2.1 引言............................................................................................................................5 2.2 单面化学机械抛光运动过程分析及仿真 .......................................................................5 2.2.1 单面化学机械抛光加工机理 ...............................................................................5 2.2.2 抛光运动轨迹分析与仿真...................................................................................5 2.2.3 仿真结果及讨论.................................................................................................6 2.3 双面化学机械抛光运动过程分析及仿真 .......................................................................7 2.3.1 双面化学机械抛光加工机理 ...............................................................................7 2.3.2 抛光运动轨迹方程的建立...................................................................................7 2.3.3 ?a、ωp、ωt 及ωw 四者关系的确定.................................................................8 2.3.4 仿真结果及讨论.................................................................................................9 2.4 本章小结................................................................................................................... 10 3 抛光参数对材料去除率及粗糙度的影响 ............................................................................... 10 3.1 抛光设备的确定 ........................................................................................................ 10 3.11 抛光机.............................................................................................................. 10 3.12 抛光垫.............................................................................................................. 10 3.13 抛光液.............................................................................................................. 10 3.2 抛光参数对材料去除率及粗糙度的影响 ..................................................................... 11 3.2.1 SiO 2 的粒度对晶片抛光的影响........................................................................... 11 3.2.2 SiO2 的浓度对晶片抛光的影响.......................................................................... 11 3.2.3 抛光液的 pH 值性对晶片抛光的影响 ................................................................ 12 3.2.4 抛光液的温度对晶片抛光的影响 ...................................................................... 12 3.2.5 抛光压力对晶片抛光的影响 ............................................................................. 12 3.2.6 抛光盘的转速对晶片抛光的影响 ...................................................................... 13 3.3 本章小结................................................................................................................... 13 4 蓝宝石表面的清洗............................................................................................................... 13 4.1 引言.......................................................................................................................... 13 4.2 蓝宝石表面清洗原理 ................................................................................................. 14 4.2.1 蓝宝石表面状态与洁净度................................................................................. 14 4.2.2 吸附理论 .................................................................................................-Al2 O3 , a single crystal material, developed and industrialized with thedevelopment of communication and information industries recently, owns the excellent performances such as excellent rigidity, excellent chemical stability, higher heat exchange, excellent insulation and good mechanical capability ,etc. However,researches on a-Al2 O3 single crystal wafer around world are still lacking. a-Al2 O3 wafers are machined usually by chemical mechanical polishing in industry. Based on the investigation of the mechanical property of a-Al2 O3 crystal wafer and theory analysis of polishing movement tracks, this thesis discuss its mechanical of CMP,present its polishing characteristic and analyzes the effects of polishing condition parameters upon CMP. For selecting suitable CMP condition, the movement of polishing was modelingand simulation. For bosseyed polishing, the analysised results show that the reasonable rotating speed and distance between workpiece plate center and polishing plate center are 60rpm and 100mm. For polishing machine, which is drive by four-bar mechanism, the analytical results show that the scales between the pad and the wafer of rotating speed are variable. When the scale is more than two, the result is the best.For double-sided polishing, the scales between the wafer and the inner gear of rotating speed are also variable, When the value is between 0.79 to 1.4, the effect is the best. The CMP experiment was carried out systematically on a-Al2 O3 . The polishing surface roughness and material removal rate in different polishing conditions were measured and the effects of polishing pad material and its condition, pressure, rotating speed of the polishing plate, the type and size of abrasive, and the properties of the polishing slurry on the surface roughness and material removal rate were analysed in details. We get the best parameter in the process of CMP, such as the press of pad is 400Pa and the time is 15minutes when we grind. While we polish the wafers, the rotating of the pad should be 70rpm and the rotating of wafer should be 30rpm, the press of the pad should be 100Pa. Key word: a-Al2 O3 single crystal wafer; chemical mechanicalgrinding and polishing; movement modeling and stimulation