2SJ162中文资料

PW
DC
=
e Op
10 ms
ra
–2 –1.0 –0.5
s(
tio
(1
1
n
Sh
Sh
= (T C
ot)
ot
)
25 °C
50
(–120 V, –0.83 A)
)
(–140 V, –0.71 A) (–160 V, –0.63 A) 2SJ160 2SJ161 2SJ162
0
50 100 Case Temperature TC (°C)
3.6
0.9 1.0
5.45 ± 0.5
5.45 ± 0.5
Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P — Conforms 5.0 g
0.3
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
Forward Transfer Admittance vs. Frequency
500
200 VDS = –10 V f = 1 MHz 100 0 4 2 6 8 Gate to Source Voltage VGS (V) 10
3M
10 M
2SJ160, 2SJ161, 2SJ162
Switching Time vs. Drain Current 500 Switching Time ton, toff (ns)
1
Symbol VDSX
Ratings –120 –140 –160 ±15 –7 –7 100 150 –55 to +150

Unit V
V A A W °C °C
2
2SJ160, 2SJ161, 2SJ162
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage 2SJ160 2SJ161 2SJ162 Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 1. Pulse test V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss t on t off Symbol Min V(BR)DSX –120 –140 –160 ±15 –0.15 — 0.7 — — — — — Typ — — — — — — 1.0 900 400 40 230 110 Max — — — — –1.45 –12 1.4 — — — — — Unit V V V V V V S pF pF pF ns ns VDD = –20 V, ID = –4 A I G = ±100 µA, VDS = 0 I D = –100 mA, VDS = –10 V I D = –7 A, VGD = 0*1 I D = –3 A, VDS = –10 V*1 VGS = 5 V, VDS = –10V, f = 1 MHz Test conditions I D = –10 mA , VGS = 10 V
Input Capacitance vs. Gate to Source Voltage Forward Transfer Admittance yfs (S) 1,000 3.0 1.0 0.3 0.1 0.03 0.01 0.003 10 k TC = 25°C VDS = –10 V ID = –2 A 30 k 100 k 300 k 1 M Frequency f (Hz) Input Capacitance Ciss (pF)
2SJ160, 2SJ161, 2SJ162
Silicon P-Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058
Features
• • • • • • • Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier
75 25
TC =–
–8 –6 –5
25
°C
–2 –1.0 –0.5 –2 ID = –1 A 0 –5 –10 –2 –6 –8 –4 –10 Gate to Source Voltage VGS (V) –2 –4
–0.2 –0.1 –0.1 –0.2 –0.5 –1.0 –2 Drain Current ID (A)