FX20ASJ-06-T13中文资料

Gate-Source Voltage vs. Gate Charge (Typical)
–10 Tch = 25°C ID = –20A
–8
–6
–4
VDS = –10V –20V –40V
–2
0
0
10 20 30 40 50
Gate Charge Qg (nC)
Gate-Source Voltage VGS (V)
Symbol V(BR)DSS
IGSS IDSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on)
tr td(off)
tf VSD Rth(ch-c) trr
Min –60 — — –1.3 — — — — — — — — — — — — — —
Typ — — — –1.8 73 119 –0.73 10.9 2370 306 147 15 37 131 72 –1.0 — 50
Max — ±0.1 –0.1 –2.3 97 166 –0.97 — — — — — — — — –1.5 3.57 —
Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V
1ms
–102
–7
–5 –3
100µs
–2
–101 –7
DC
–5
–3 –2
–100 –7 –5
Tc = 25°C Single Pulse
–3 –2
–2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
200 Tc = 25°C Pulse Test
160 VGS = –4V
120
–10V 80
40 0 –10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102
Drain Current ID (A)
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FX20ASJ-06
Drain Current ID (A)
Output Characteristics (Typical)
–50 PD = 35W
–40
–30
VGS =
–10V
–6V
–8V
Tc = 25°C Pulse Test
–5V
–20
–4V
–10 –3V
0
0
–2
–4
–6
–8 –10
Drain-Source Voltage VDS (V)
32Leabharlann td(off)102 tf
7
5
4
tr
3
2
td(on)
101
7
5 4
3 –5
–7 –100
Tch = 25°C VDD = –30V VGS = –10V RGEN = RGS = 50Ω
–2 –3 –4–5 –7 –101 –2 –3 –4–5
Drain Current ID (A)
Source-Drain Diode Forward Characteristics (Typical)
Rev.2.00 Aug 07, 2006 page 3 of 6
Drain-Source On-State Resistance rDS(ON) (mΩ)
Drain Current ID (A)
Drain Current ID (A)
Maximum Safe Operating Area
–2
= 10µs tw
V
VDS = 0 V
A
A
A
L = 100 µH
A
A
W
°C
°C
g
Typical value
Rev.2.00 Aug 07, 2006 page 1 of 6
元器件交易网
FX20ASJ-06
Electrical Characteristics
Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
1.2
1.0
0.8
0.6
0.4 –50 0
50 100 150
Channel Temperature Tch (°C)
Switching Time Measurement Circuit
–20 VGS = –10V
–16 –8V –6V
–12 –5V
–8
Tc = 25°C Pulse Test
–4V
PD = 35W
–4
–3V
0 0 –1.0 –2.0 –3.0 –4.0 –5.0
Drain-Source Voltage VDS (V)
On-State Resistance vs. Drain Current (Typical)
Capacitance vs. Drain-Source Voltage (Typical)
3 2
Ciss
103
Tch = 25°C
7
f = 1MHz
5
VGS = 0V
4
3
Coss
2
102
7
Crss
5 4
3 –3
–5–7–100
–2 –3
–5–7–101
–2 –3
–5–7–102
–2 –3
Drain-Source Voltage VDS (V)
元器件交易网
FX20ASJ-06
High-Speed Switching Use Pch Power MOS FET
Features
• Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns
102
7 5 4 3 2 TC = 75°C 125°C
25°C
101
7 5 4 3
2
VDS = –10V Pulse Test
10–0100 –2 –3 –4 –5 –7–101 –2 –3 –4–5 –7–102
Drain Current ID (A)
Switching Characteristics (Typical)
°C/W ns
(Tch = 25°C)
Test Conditions ID = –1 mA, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = –60 V, VGS = 0 V ID = –1 mA, VDS = –10 V ID = –10 A, VGS = –10 V ID = –10 A, VGS = – 4 V ID = –10 A, VGS = –10 V ID = –10 A, VDS = –10 V VDS = –10 V, VGS = 0 V, f = 1MHz
Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C)
Breakdown Voltage vs. Channel Temperature (Typical)
1.4 VGS = 0V ID = –1mA
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg —
Ratings –60 ±20 –20 –80 –20 –20 –80 35
– 55 to +150 – 55 to +150
0.32
(Tc = 25°C)
Unit
Conditions
V
VGS = 0 V
Outline
RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A)