semiconductor laser diode to single-mode fiber coupling using diffractive optical elements

合集下载

半导体锁模激光器的英语

半导体锁模激光器的英语Semiconductor Mode-Locked Lasers.Semiconductor mode-locked lasers (MLLs) are a type of laser that emits pulses of light with extremely short durations, typically in the picosecond or femtosecond range. They are based on semiconductor materials, such as gallium arsenide (GaAs) or indium phosphide (InP), and use avariety of techniques to achieve mode-locking, which is the process of synchronizing the longitudinal modes of thelaser cavity.Mode-locked lasers are widely used in a variety of applications, including optical communications, optical sensing, and laser processing. They are particularly useful in applications that require high peak powers and short pulse durations, such as in nonlinear optics and ultrafast spectroscopy.There are several different techniques that can be usedto achieve mode-locking in semiconductor lasers. One common technique is to use an external cavity, which consists of a laser diode and an external resonator. The laser diode is used to generate the optical gain, while the external resonator is used to provide feedback and control the mode-locking process. Another technique is to use a saturable absorber, which is a material that absorbs light at low intensities but becomes transparent at high intensities.The saturable absorber is placed inside the laser cavityand acts to selectively suppress certain modes of the laser, leading to mode-locking.The performance of semiconductor MLLs is characterized by a number of parameters, including the pulse duration,the repetition rate, the average power, and the peak power. The pulse duration is the duration of the individual light pulses, and is typically measured in picoseconds or femtoseconds. The repetition rate is the rate at which the pulses are emitted, and is typically measured in gigahertz. The average power is the average power of the laser output, and is typically measured in milliwatts or watts. The peak power is the maximum power of the individual light pulses,and is typically measured in kilowatts or megawatts.Semiconductor MLLs are a rapidly developing field, and new advances are being made all the time. These lasers are becoming increasingly powerful and efficient, and arefinding new applications in a wide variety of fields.半导体锁模激光器。

850nm_窄发散角单模半导体激光器材料研究

850nm窄发散角单模半导体激光器材料研究宁吉丰王彦照陈宏泰房玉龙*（中国电子科技集团公司第十三研究所）摘要：短距离激光雷达技术应用广泛，但是要求器件的发散角比较小。

针对器件的发散角，通过商用软件和波导模拟软件，设计850nm GaAs/AlGaAs扩展波导外延材料结构。

采用非对称波导结构设计，有助于降低内部光学损耗，提高激光器的斜率效率，降低激光器功耗。

通过优化腐蚀阻挡层GaInP的掺杂浓度，消除能带不连续导致器件电压升高问题。

采用MOCVD生长了带有腐蚀阻挡层的AlGaAs/GaAs非对称扩展波导外延片，并制作成条宽2.5μm、腔长1mm的激光器芯片。

测试结果表明，室温条件直流条件测试下，阈值电流为35mA，斜率效率为1.2 W/A，输出功为200mW@200mA，快轴发散角测试为15°。

关键词：850nm，单模，窄发散角，激光二极管Study on Epitaxial Materials of 850 nm Single-Mode Semiconductor LaserDiode with Small Divergence AngleNING Ji-feng WANG Yan-zhao CHEN Hong-tai FANG Yu-long*（The 13th Research Institute of China Electronics Technology Group Corporation）Abstract:Short range LIDAR technology is widely used, but it requires a relatively small divergence angle of the device. According to the divergence angle of the device, the structure of 850 nm GaAs/AlGaAs extended waveguide epitaxial materials was designed and optimized by the commercial and waveguide simulation software. The asymmetric waveguide structure helps to reduce the internal optical loss, improve the slope efficiency and reduce the power consumption of the laser. By optimizing the doping concentration of the etch stop layer GaInP, the problem of the increasing device voltage due to band discontinuity is eliminated. The AlGaAs/GaAs asymmetric extended waveguide epitaxial layer was grown by metal organic chemical vapor deposition (MOCVD) process. The laser chip with the strip width of 2.5 μm and the cavity length of 1mm was fabricated. The test results show that with the test under DC condition at room temperature, the threshold current is 35 mA, the slope efficiency is 1.2 W/A, the output power is 200 mW@ 200 mA, and the fast axis divergence angle is 15°.Keywords: 850 nm, single mode, small divergence angle, laser diode作者简介：宁吉丰，硕士，工程师，主要研究方向为MOCVD外延生长和GaAs与InP基半导体激光器。

半导体一些术语的中英文对照

半导体一些术语的中英文对照离子注入机ion implanterLSS理论Lindhand Scharff and Schiott theory 又称“林汉德-斯卡夫—斯高特理论"。

沟道效应channeling effect射程分布range distribution深度分布depth distribution投影射程projected range阻止距离stopping distance阻止本领stopping power标准阻止截面standard stopping cross section 退火annealing激活能activation energy等温退火isothermal annealing激光退火laser annealing应力感生缺陷stress—induced defect择优取向preferred orientation制版工艺mask—making technology图形畸变pattern distortion初缩first minification精缩final minification母版master mask铬版chromium plate干版dry plate乳胶版emulsion plate透明版see—through plate高分辨率版high resolution plate，HRP超微粒干版plate for ultra-microminiaturization 掩模mask掩模对准mask alignment对准精度alignment precision光刻胶photoresist又称“光致抗蚀剂"。

负性光刻胶negative photoresist正性光刻胶positive photoresist无机光刻胶inorganic resist多层光刻胶multilevel resist电子束光刻胶electron beam resistX射线光刻胶X-ray resist刷洗scrubbing甩胶spinning涂胶photoresist coating后烘postbaking光刻photolithographyX射线光刻X—ray lithography电子束光刻electron beam lithography离子束光刻ion beam lithography深紫外光刻deep—UV lithography光刻机mask aligner投影光刻机projection mask aligner曝光exposure接触式曝光法contact exposure method接近式曝光法proximity exposure method光学投影曝光法optical projection exposure method 电子束曝光系统electron beam exposure system分步重复系统step—and—repeat system显影development线宽linewidth去胶stripping of photoresist氧化去胶removing of photoresist by oxidation等离子[体］去胶removing of photoresist by plasma 刻蚀etching干法刻蚀dry etching反应离子刻蚀reactive ion etching，RIE各向同性刻蚀isotropic etching各向异性刻蚀anisotropic etching反应溅射刻蚀reactive sputter etching离子铣ion beam milling又称“离子磨削”。

电子技术专业英语

1、汉译英1)直流电路direct current circuits2)放大器（扩音器）amplifier3)模拟电子技术analog electronics4)半导体二极管semiconductor diode5)晶体管效应transistor effect6)微解决器microprocessor7)电气工程electrical engineering8)能源工程（或电力工程）power engineering9)通信工程telecommunications engineering10)内部器件internal devices11)电子元件electrical components12)欧姆定律Ohm law13)限制电流limit current14)分压器voltage divider15)晶体管偏置电路transistor biasing circuits16)阻碍电流block DC current17)存储点能store electrical energy18)感抗inductive reactance19)绝缘材料insulating material20)交流阻抗AC resistancea)通用仪表general-purpose meterb)模拟仪表analog meterc)互换测试笔reverse the test leadsd)机械调节mechanical adjuste)测量电阻measure resistancef)正向电压positive voltageg)测量电流measure currenth)电压幅度voltage amplitudei)双踪示波器dual-trace oscilloscopej)信号发生器signal generator21)PN结PN junction22)三极管bipolar transistor23)电子和空穴electron and hole24)稳压电源electronic power supply或steady DC voltage source25)桥式整流器bridge rectifier26)脉冲直流电pulsating DC27)二极管的正极anode of diode28)峰值电压peak voltage29)电容滤波器capacitor filter30)充电和放电charge and discharge31)稳压管Zener diode32)电器电子工程师学会IEEE(Institute of Electrical and Electronics Engineers)33)专业技术组织technical professional association34)基尔霍夫电压定律Kirchhoff’s V oltage Law35)电压源voltage sources36)电荷守恒定律the law of conservation of electric charge37)在每一瞬时at every instant of time38)元件两端的电压voltages across elements39)无线电传输radio transmission40)频率调制或调频frequency modulation41)频域the frequency domain42)线性电阻linear resistor43)调幅波形amplitude modulation wave44)专用集成电路（ASIC）45)快速时间响应fast response time46)有效信号valid signal47)十进制数字系统decimal system48)逻辑运算logic operation1)控制信号线the control bus2)中断线interrupt lines1)结构化语言structured language2)局部变量local variables3)副作用side effect4)汇编语言指令assembly language instructions1)静止图像still image2)阴极射线管，显像管CRT or the cathode ray tube3)像素pixel4)电子束electron beam2、英译汉1)assembler language汇编语言2)alternating current circuits交流电路3)passive electrical circuits无源电路4)three phase circuits三相电路5)digital electronics数字电子技术6)logic gates逻辑门7)3D virtual reality image三维虚拟图像8)computer programming计算机编程9)major in（在大学里）主修10)advanced programming techniques高级编程技术1)known as capacitive reactance称为容抗2)with units ohms单位为欧姆3)prevent device from burning out防止器件烧掉4)has an AC resistance to AC current对交流电流由阻抗5)adjustment with a screw用一个螺丝调节6)in the shape of a cylinder 呈圆柱形式7)block DC current，but pass AC current阻直流通交流8)to vary the inductance改变电感9)be given by the formula 由公式给出10)the RF amplifier 音频放大器1)analog multimeter模拟万用表2)extended range扩展范围3)specific meters特殊仪表4)includes the function and range switches具有功能及范围选择旋钮5)present an electronic picture呈现一幅电子图像6)display the voltage waveform显示电压波形7)appear on the screen在屏幕上出现8)phase relationships相位关系9)an example例如，作为一个例子10)in series with the circuit串连接入电路1)Semiconductor material半导体材料2)forward biased正向偏置3)depend on the external circuit resistance取决于外部电路的电阻4)excessive reverse-biased voltage过高的反偏电压5)is directly proportional to the amount ofbase current是正比于基极电流6)may even appear almost as a short几乎可当作是短路7)cause stability problems for a transistorcircuit引起晶体管电路的稳定性问题8)digital technology数字技术9)the most popular technology最常用的技术10)use two complementary typeset oftransistors N-channel and P-channel用两种互补型的晶体管——N沟道和P沟道1)equipment operation设备的运营2)device that converts AC into DC把交流电转换成直流电的器件3)the power lines电源线4)depending on the value of DC voltageneeded 根据所需要的直流电压值5) a half-wave rectifier平波整流器6)so as to produce a constant DC output从而产生一个稳定的直流输出7)in the negative side of the capacitor在电容的负极8)flow through the load流过负载9)in the forward-biased condition在加正向偏置电压的条件下10) a series（current-limiting）resistor一个串联（限制电流）电阻1)current source电流源2)under this circumstance在这种情况下3)present the second of Kirchhoff’s laws给出基尔霍夫第二定律4)introduce the concept of a “loop”引入“回路”的概念5)An alternative statement of KVLKVL的另一种表述法6)voltages algebraically sum电压代数和7)sinusoidal steady-syate response正弦稳态响应8)ordinary household voltage平常用电的电压9)time-invariant circuit时不变电路10)percentage of modulation调制比例reduce the power consumption减小消耗功率flip-flop 触发器the octal and hexadecimal systems当时钟脉冲信号来届时改变状态①直流电路direct current circuits②放大器（扩音器）amplifier③欧姆定律Ohm law④正极positive electrode⑤充电与放电Charge and discharge⑥无线电传输Radio transmission⑦模拟仪表Analogue Meters⑧模拟电子技术analog electronics⑨半导体二极管semiconductor⑩晶体管效应transistor effect⑪微解决器microprocessor⑫通信工程telecommunications engineering ⑬汇编语言assembler language⑭电子元件electrical components⑮限制电流limit current⑯分压器voltage divider⑰偏置电路biasing circuits⑱阻碍电流block DC current⑲感抗inductive reactance⑳容抗capacitive21正向电压positive voltage22扩展范围extended range23电压波形voltage waveform24连接入电路in series with the circuit25PN结PN junction 26三极管bipolar transistor27电子与空穴electron and hole28半导体材料semiconductor material29正向偏置forward biased30数字技术digital technology31桥式整流器bridge rectifier32稳压管Zener diode33电源线the power lines34在电容的负极in the negative side of the capacitor 在加正向偏置的条件下in the forward-biased condition一个串联电阻 a series (current-limiting)resistor35电压源voltage sources36在每一瞬时at every instant of time37无线电传输radio transmission38频率调制或调频frequency modulation39快速时间响应fast response time40有效信号valid signal41结构化语言structured language42局部变量local variables43副作用side effect44静止图像still image45阴极射线管pixel 46电子束electron beam1.resistors are used to limit current flowing to adevice ,thereby preventing it from burning out, as voltage dividers to reduce voltage for other circuits, as transistor biasing circuits, and to serve as circuit loads.电阻常用做限流器，限制流过器件的电流防止烧坏器件，电阻也可用作分压器，以减小其他电路电压，还可以用在晶体管偏执电路中和作为电路负载。

半导体制造技术

Semiconductor Manufacturing Technology半导体制造技术Instructor’s ManualMichael QuirkJulian SerdaCopyright Prentice HallTable of Contents目录OverviewI. Chapter1. Semiconductor industry overview2. Semiconductor materials3. Device technologies—IC families4. Silicon and wafer preparation5. Chemicals in the industry6. Contamination control7. Process metrology8. Process gas controls9. IC fabrication overview10. Oxidation11. Deposition12. Metallization13. Photoresist14. Exposure15. Develop16. Etch17. Ion implant18. Polish19. Test20. Assembly and packagingII. Answers to End-of-Chapter Review QuestionsIII. Test Bank (supplied on diskette)IV. Chapter illustrations, tables, bulleted lists and major topics (supplied on CD-ROM)Notes to Instructors:1)The chapter overview provides a concise summary of the main topics in each chapter.2)The correct answer for each test bank question is highlighted in bold. Test bankquestions are based on the end-of-chapter questions. If a student studies the end-of-chapter questions (which are linked to the italicized words in each chapter), then they will be successful on the test bank questions.2Chapter 1Introduction to the Semiconductor Industry Die:管芯 defective:有缺陷的Development of an Industry•The roots of the electronic industry are based on the vacuum tube and early use of silicon for signal transmission prior to World War II. The first electronic computer, the ENIAC, wasdeveloped at the University of Pennsylvania during World War II.•William Shockley, John Bardeen and Walter Brattain invented the solid-state transistor at Bell Telephone Laboratories on December 16, 1947. The semiconductor industry grew rapidly in the 1950s to commercialize the new transistor technology, with many early pioneers working inSilicon Valley in Northern California.Circuit Integration•The first integrated circuit, or IC, was independently co-invented by Jack Kilby at Texas Instruments and Robert Noyce at Fairchild Semiconductor in 1959. An IC integrates multiple electronic components on one substrate of silicon.•Circuit integration eras are: small scale integration (SSI) with 2 - 50 components, medium scale integration (MSI) with 50 – 5k components, large scale integration (LSI) with 5k to 100kcomponents, very large scale integration (VLSI) with 100k to 1M components, and ultra large scale integration (ULSI) with > 1M components.1IC Fabrication•Chips (or die) are fabricated on a thin slice of silicon, known as a wafer (or substrate). Wafers are fabricated in a facility known as a wafer fab, or simply fab.•The five stages of IC fabrication are:Wafer preparation: silicon is purified and prepared into wafers.Wafer fabrication: microchips are fabricated in a wafer fab by either a merchant chip supplier, captive chip producer, fabless company or foundry.Wafer test: Each individual die is probed and electrically tested to sort for good or bad chips.Assembly and packaging: Each individual die is assembled into its electronic package.Final test: Each packaged IC undergoes final electrical test.•Key semiconductor trends are:Increase in chip performance through reduced critical dimensions (CD), more components per chip (Moore’s law, which predicts the doubling of components every 18-24 months) andreduced power consumption.Increase in chip reliability during usage.Reduction in chip price, with an estimated price reduction of 100 million times for the 50 years prior to 1996.The Electronic Era•The 1950s saw the development of many different types of transistor technology, and lead to the development of the silicon age.•The 1960s were an era of process development to begin the integration of ICs, with many new chip-manufacturing companies.•The 1970s were the era of medium-scale integration and saw increased competition in the industry, the development of the microprocessor and the development of equipment technology. •The 1980s introduced automation into the wafer fab and improvements in manufacturing efficiency and product quality.•The 1990s were the ULSI integration era with the volume production of a wide range of ICs with sub-micron geometries.Career paths•There are a wide range of career paths in semiconductor manufacturing, including technician, engineer and management.2Chapter 2 Characteristics of Semiconductor MaterialsAtomic Structure•The atomic model has three types of particles: neutral neutrons（不带电的中子）, positively charged protons（带正电的质子）in the nucleus and negatively charged electrons（带负电的核外电子） that orbit the nucleus. Outermost electrons are in the valence shell, and influence the chemical and physical properties of the atom. Ions form when an atom gains or loses one or more electrons.The Periodic Table•The periodic table lists all known elements. The group number of the periodic table represents the number of valence shell electrons of the element. We are primarily concerned with group numbers IA through VIIIA.•Ionic bonds are formed when valence shell electrons are transferred from the atoms of one element to another. Unstable atoms (e.g., group VIIIA atoms because they lack one electron) easily form ionic bonds.•Covalent bonds have atoms of different elements that share valence shell electrons.3Classifying Materials•There are three difference classes of materials:ConductorsInsulatorsSemiconductors•Conductor materials have low resistance to current flow, such as copper. Insulators have high resistance to current flow. Capacitance is the storage of electrical charge on two conductive plates separated by a dielectric material. The quality of the insulation material between the plates is the dielectric constant. Semiconductor materials can function as either a conductor or insulator.Silicon•Silicon is an elemental semiconductor material because of four valence shell electrons. It occurs in nature as silica and is refined and purified to make wafers.•Pure silicon is intrinsic silicon. The silicon atoms bond together in covalent bonds, which defines many of silicon’s properties. Silicon atoms bond together in set, repeatable patterns, referred to asa crystal.•Germanium was the first semiconductor material used to make chips, but it was soon replaced by silicon. The reasons for this change are:Abundance of siliconHigher melting temperature for wider processing rangeWide temperature range during semiconductor usageNatural growth of silicon dioxide•Silicon dioxide (SiO2) is a high quality, stable electrical insulator material that also serves as a good chemical barrier to protect silicon from external contaminants. The ability to grow stable, thin SiO2 is fundamental to the fabrication of Metal-Oxide-Semiconductor (MOS) devices. •Doping increases silicon conductivity by adding small amounts of other elements. Common dopant elements are from trivalent, p-type Group IIIA (boron) and pentavalent, n-type Group VA (phosphorus, arsenic and antimony).•It is the junction between the n-type and p-type doped regions (referred to as a pn junction) that permit silicon to function as a semiconductor.4Alternative Semiconductor Materials•The alternative semiconductor materials are primarily the compound semiconductors. They are formed from Group IIIA and Group VA (referred to as III-V compounds). An example is gallium arsenide (GaAs).•Some alternative semiconductors come from Group IIA and VIA, referred to as II-VI compounds. •GaAs is the most common III-V compound semiconductor material. GaAs ICs have greater electron mobility, and therefore are faster than ICs made with silicon. GaAs ICs also have higher radiation hardness than silicon, which is better for space and military applications. The primary disadvantage of GaAs is the lack of a natural oxide.5Chapter 3Device TechnologiesCircuit Types•There are two basic types of circuits: analog and digital. Analog circuits have electrical data that varies continuously over a range of voltage, current and power values. Digital circuits have operating signals that vary about two distinct voltage levels – a high and a low.Passive Component Structures•Passive components such as resistors and capacitors conduct electrical current regardless of how the component is connected. IC resistors are a passive component. They can have unwanted resistance known as parasitic resistance. IC capacitor structures can also have unintentional capacitanceActive Component Structures•Active components, such as diodes and transistors can be used to control the direction of current flow. PN junction diodes are formed when there is a region of n-type semiconductor adjacent to a region of p-type semiconductor. A difference in charge at the pn junction creates a depletion region that results in a barrier voltage that must be overcome before a diode can be operated. A bias voltage can be configured to have a reverse bias, with little or no conduction through the diode, or with a forward bias, which permits current flow.•The bipolar junction transistor (BJT) has three electrodes and two pn junctions. A BJT is configured as an npn or pnp transistor and biased for conduction mode. It is a current-amplifying device.6• A schottky diode is formed when metal is brought in contact with a lightly doped n-type semiconductor material. This diode is used in faster and more power efficient BJT circuits.•The field-effect transistor (FET), a voltage-amplifying device, is more compact and power efficient than BJT devices. A thin gate oxide located between the other two electrodes of the transistor insulates the gate on the MOSFET. There are two categories of MOSFETs, nMOS (n-channel) and pMOS (p-channel), each which is defined by its majority current carriers. There is a biasing scheme for operating each type of MOSFET in conduction mode.•For many years, nMOS transistors have been the choice of most IC manufacturers. CMOS, with both nMOS and pMOS transistors in the same IC, has been the most popular device technology since the early 1980s.•BiCMOS technology makes use of the best features of both CMOS and bipolar technology in the same IC device.•Another way to categorize FETs is in terms of enhancement mode and depletion mode. The major different is in the way the channels are doped: enhancement-mode channels are doped opposite in polarity to the source and drain regions, whereas depletion mode channels are doped the same as their respective source and drain regions.Latchup in CMOS Devices•Parasitic transistors can create a latchup condition(???????) in CMOS ICs that causes transistors to unintentionally（无心的） turn on. To control latchup, an epitaxial layer is grown on the wafer surface and an isolation barrier（隔离阻障）is placed between the transistors. An isolation layer can also be buried deep below the transistors.Integrated Circuit Productsz There are a wide range of semiconductor ICs found in electrical and electronic products. This includes the linear IC family, which operates primarily with anal3og circuit applications, and the digital IC family, which includes devices that operate with binary bits of data signals.7Chapter 4Silicon and Wafer Preparation8z Semiconductor-Grade Silicon•The highly refined silicon used for wafer fabrication is termed semiconductor-grade silicon (SGS), and sometimes referred to as electronic-grade silicon. The ultra-high purity of semiconductor-grade silicon is obtained from a multi-step process referred to as the Siemens process.Crystal Structure• A crystal is a solid material with an ordered, 3-dimensional pattern over a long range. This is different from an amorphous material that lacks a repetitive structure.•The unit cell is the most fundamental entity for the long-range order found in crystals. The silicon unit cell is a face-centered cubic diamond structure. Unit cells can be organized in a non-regular arrangement, known as a polycrystal. A monocrystal are neatly arranged unit cells.Crystal Orientation•The orientation of unit cells in a crystal is described by a set of numbers known as Miller indices.The most common crystal planes on a wafer are (100), (110), and (111). Wafers with a (100) crystal plane orientation are most common for MOS devices, whereas (111) is most common for bipolar devices.Monocrystal Silicon Growth•Silicon monocrystal ingots are grown with the Czochralski (CZ) method to achieve the correct crystal orientation and doping. A CZ crystal puller is used to grow the silicon ingots. Chunks of silicon are heated in a crucible in the furnace of the puller, while a perfect silicon crystal seed is used to start the new crystal structure.• A pull process serves to precisely replicate the seed structure. The main parameters during the ingot growth are pull rate and crystal rotation. More homogeneous crystals are achieved with a magnetic field around the silicon melt, known as magnetic CZ.•Dopant material is added to the melt to dope the silicon ingot to the desired electrical resistivity.Impurities are controlled during ingot growth. A float-zone crystal growth method is used toachieve high-purity silicon with lower oxygen content.•Large-diameter ingots are grown today, with a transition underway to produce 300-mm ingot diameters. There are cost benefits for larger diameter wafers, including more die produced on a single wafer.Crystal Defects in Silicon•Crystal defects are interruptions in the repetitive nature of the unit cell. Defect density is the number of defects per square centimeter of wafer surface.•Three general types of crystal defects are: 1) point defects, 2) dislocations, and 3) gross defects.Point defects are vacancies (or voids), interstitial (an atom located in a void) and Frenkel defects, where an atom leaves its lattice site and positions itself in a void. A form of dislocation is astacking fault, which is due to layer stacking errors. Oxygen-induced stacking faults are induced following thermal oxidation. Gross defects are related to the crystal structure (often occurring during crystal growth).Wafer Preparation•The cylindrical, single-crystal ingot undergoes a series of process steps to create wafers, including machining operations, chemical operations, surface polishing and quality checks.•The first wafer preparation steps are the shaping operations: end removal, diameter grinding, and wafer flat or notch. Once these are complete, the ingot undergoes wafer slicing, followed by wafer lapping to remove mechanical damage and an edge contour. Wafer etching is done to chemically remove damage and contamination, followed by polishing. The final steps are cleaning, wafer evaluation and packaging.Quality Measures•Wafer suppliers must produce wafers to stringent quality requirements, including: Physical dimensions: actual dimensions of the wafer (e.g., thickness, etc.).Flatness: linear thickness variation across the wafer.Microroughness: peaks and valleys found on the wafer surface.Oxygen content: excessive oxygen can affect mechanical and electrical properties.Crystal defects: must be minimized for optimum wafer quality.Particles: controlled to minimize yield loss during wafer fabrication.Bulk resistivity(电阻系数): uniform resistivity from doping during crystal growth is critical. Epitaxial Layer•An epitaxial layer (or epi layer) is grown on the wafer surface to achieve the same single crystal structure of the wafer with control over doping type of the epi layer. Epitaxy minimizes latch-up problems as device geometries continue to shrink.Chapter 5Chemicals in Semiconductor FabricationEquipment Service Chase Production BayChemical Supply Room Chemical Distribution Center Holding tank Chemical drumsProcess equipmentControl unit Pump Filter Raised and perforated floorElectronic control cablesSupply air ductDual-wall piping for leak confinement PumpFilterChemical control and leak detection Valve boxes for leak containment Exhaust air ductStates of Matter• Matter in the universe exists in 3 basic states (宇宙万物存在着三种基本形态): solid, liquid andgas. A fourth state is plasma.Properties of Materials• Material properties are the physical and chemical characteristics that describe its unique identity.• Different properties for chemicals in semiconductor manufacturing are: temperature, pressure andvacuum, condensation, vapor pressure, sublimation and deposition, density, surface tension, thermal expansion and stress.Temperature is a measure of how hot or cold a substance is relative to another substance. Pressure is the force exerted per unit area. Vacuum is the removal of gas molecules.Condensation is the process of changing a gas into a liquid. Vaporization is changing a liquidinto a gas.Vapor pressure is the pressure exerted by a vapor in a closed container at equilibrium.Sublimation is the process of changing a solid directly into a gas. Deposition is changing a gas into a solid.Density is the mass of a substance divided by its volume.Surface tension of a liquid is the energy required to increase the surface area of contact.Thermal expansion is the increase in an object’s dimension due to heating.Stress occurs when an object is exposed to a force.Process Chemicals•Semiconductor manufacturing requires extensive chemicals.• A chemical solution is a chemical mixture. The solvent is the component of the solution present in larger amount. The dissolved substances are the solutes.•Acids are solutions that contain hydrogen and dissociate in water to yield hydronium ions. A base is a substance that contains the OH chemical group and dissociates in water to yield the hydroxide ion, OH-.•The pH scale is used to assess the strength of a solution as an acid or base. The pH scale varies from 0 to 14, with 7 being the neutral point. Acids have pH below 7 and bases have pH values above 7.• A solvent is a substance capable of dissolving another substance to form a solution.• A bulk chemical distribution (BCD) system is often used to deliver liquid chemicals to the process tools. Some chemicals are not suitable for BCD and instead use point-of-use (POU) delivery, which means they are stored and used at the process station.•Gases are generally categorized as bulk gases or specialty gases. Bulk gases are the relatively simple gases to manufacture and are traditionally oxygen, nitrogen, hydrogen, helium and argon.The specialty gases, or process gases, are other important gases used in a wafer fab, and usually supplied in low volume.•Specialty gases are usually transported to the fab in metal cylinders.•The local gas distribution system requires a gas purge to flush out undesirable residual gas. Gas delivery systems have special piping and connections systems. A gas stick controls the incoming gas at the process tool.•Specialty gases may be classified as hydrides, fluorinated compounds or acid gases.Chapter 6Contamination Control in Wafer FabsIntroduction•Modern semiconductor manufacturing is performed in a cleanroom, isolated from the outside environment and contaminants.Types of contamination•Cleanroom contamination has five categories: particles, metallic impurities, organic contamination, native oxides and electrostatic discharge. Killer defects are those causes of failure where the chip fails during electrical test.Particles: objects that adhere to a wafer surface and cause yield loss. A particle is a killer defect if it is greater than one-half the minimum device feature size.Metallic impurities: the alkali metals found in common chemicals. Metallic ions are highly mobile and referred to as mobile ionic contaminants (MICs).Organic contamination: contains carbon, such as lubricants and bacteria.Native oxides: thin layer of oxide growth on the wafer surface due to exposure to air.Electrostatic discharge (ESD): uncontrolled transfer of static charge that can damage the microchip.Sources and Control of Contamination•The sources of contamination in a wafer fab are: air, humans, facility, water, process chemicals, process gases and production equipment.Air: class number designates the air quality inside a cleanroom by defining the particle size and density.Humans: a human is a particle generator. Humans wear a cleanroom garment and follow cleanroom protocol to minimize contamination.Facility: the layout is generally done as a ballroom (open space) or bay and chase design.Laminar airflow with air filtering is used to minimize particles. Electrostatic discharge iscontrolled by static-dissipative materials, grounding and air ionization.Ultrapure deiniozed (DI) water: Unacceptable contaminants are removed from DI water through filtration to maintain a resistivity of 18 megohm-cm. The zeta potential represents a charge on fine particles in water, which are trapped by a special filter. UV lamps are used for bacterial sterilization.Process chemicals: filtered to be free of contamination, either by particle filtration, microfiltration (membrane filter), ultrafiltration and reverse osmosis (or hyperfiltration).Process gases: filtered to achieve ultraclean gas.Production equipment: a significant source of particles in a fab.Workstation design: a common layout is bulkhead equipment, where the major equipment is located behind the production bay in the service chase. Wafer handling is done with robotic wafer handlers. A minienvironment is a localized environment where wafers are transferred on a pod and isolated from contamination.Wafer Wet Cleaning•The predominant wafer surface cleaning process is with wet chemistry. The industry standard wet-clean process is the RCA clean, consisting of standard clean 1 (SC-1) and standard clean 2 (SC-2).•SC-1 is a mixture of ammonium hydroxide, hydrogen peroxide and DI water and capable of removing particles and organic materials. For particles, removal is primarily through oxidation of the particle or electric repulsion.•SC-2 is a mixture of hydrochloric acid, hydrogen peroxide and DI water and used to remove metals from the wafer surface.•RCA clean has been modified with diluted cleaning chemistries. The piranha cleaning mixture combines sulfuric acid and hydrogen peroxide to remove organic and metallic impurities. Many cleaning steps include an HF last step to remove native oxide.•Megasonics(兆声清洗) is widely used for wet cleaning. It has ultrasonic energy with frequencies near 1 MHz. Spray cleaning will spray wet-cleaning chemicals onto the wafer. Scrubbing is an effective method for removing particles from the wafer surface.•Wafer rinse is done with overflow rinse, dump rinse and spray rinse. Wafer drying is done with spin dryer or IPA(异丙醇) vapor dry (isopropyl alcohol).•Some alternatives to RCA clean are dry cleaning, such as with plasma-based cleaning, ozone and cryogenic aerosol cleaning.Chapter 7Metrology and Defect InspectionIC Metrology•In a wafer fab, metrology refers to the techniques and procedures for determining physical and electrical properties of the wafer.•In-process data has traditionally been collected on monitor wafers. Measurement equipment is either stand-alone or integrated.•Yield is the percent of good parts produced out of the total group of parts started. It is an indicator of the health of the fabrication process.Quality Measures•Semiconductor quality measures define the requirements for specific aspects of wafer fabrication to ensure acceptable device performance.•Film thickness is generally divided into the measurement of opaque film or transparent film. Sheet resistance measured with a four-point probe is a common method of measuring opaque films (e.g., metal film). A contour map shows sheet resistance deviations across the wafer surface.•Ellipsometry is a nondestructive, noncontact measurement technique for transparent films. It works based on linearly polarized light that reflects off the sample and is elliptically polarized.•Reflectometry is used to measure a film thickness based on how light reflects off the top and bottom surface of the film layer. X-ray and photoacoustic technology are also used to measure film thickness.•Film stress is measured by analyzing changes in the radius of curvature of the wafer. Variations in the refractive index are used to highlight contamination in the film.•Dopant concentration is traditionally measured with a four-point probe. The latest technology is the thermal-wave system, which measures the lattice damage in the implanted wafer after ion implantation. Another method for measuring dopant concentration is spreading resistance probe. •Brightfield detection is the traditional light source for microscope equipment. An optical microscope uses light reflection to detect surface defects. Darkfield detection examines light scattered off defects on the wafer surface. Light scattering uses darkfield detection to detectsurface particles by illuminating the surface with laser light and then using optical imaging.•Critical dimensions (CDs) are measured to achieve precise control over feature size dimensions.The scanning electron microscope is often used to measure CDs.•Conformal step coverage is measured with a surface profiler that has a stylus tip.•Overlay registration measures the ability to accurately print photoresist patterns over a previously etched pattern.•Capacitance-voltage (C-V) test is used to verify acceptable charge conditions and cleanliness at the gate structure in a MOS device.Analytical Equipment•The secondary-ion mass spectrometry (SIMS) is a method of eroding a wafer surface with accelerated ions in a magnetic field to analyze the surface material composition.•The atomic force microscope (AFM) is a surface profiler that scans a small, counterbalanced tip probe over the wafer to create a 3-D surface map.•Auger electron spectroscopy (AES) measures composition on the wafer surface by measuring the energy of the auger electrons. It identifies elements to a depth of about 2 nm. Another instrument used to identify surface chemical species is X-ray photoelectron spectroscopy (XPS).•Transmission electron microscopy (TEM) uses a beam of electrons that is transmitted through a thin slice of the wafer. It is capable of quantifying very small features on a wafer, such as silicon crystal point defects.•Energy-dispersive spectrometer (EDX) is a widely used X-ray detection method for identifying elements. It is often used in conjunction with the SEM.• A focused ion beam (FIB) system is a destructive technique that focuses a beam of ions on the wafer to carve a thin cross section from any wafer area. This permits analysis of the wafermaterial.Chapter 8Gas Control in Process ChambersEtch process chambers••The process chamber is a controlled vacuum environment where intended chemical reactions take place under controlled conditions. Process chambers are often configured as a cluster tool. Vacuum•Vacuum ranges are low (rough) vacuum, medium vacuum, high vacuum and ultrahigh vacuum (UHV). When pressure is lowered in a vacuum, the mean free path(平均自由行程) increases, which is important for how gases flow through the system and for creating a plasma.Vacuum Pumps•Roughing pumps are used to achieve a low to medium vacuum and to exhaust a high vacuum pump. High vacuum pumps achieve a high to ultrahigh vacuum.•Roughing pumps are dry mechanical pumps or a blower pump (also referred to as a booster). Two common high vacuum pumps are a turbomolecular (turbo) pump and cryopump. The turbo pump is a reliable, clean pump that works on the principle of mechanical compression. The cryopump isa capture pump that removes gases from the process chamber by freezing them.。

半导体激光器折射率电流

半导体激光器折射率电流英文回答：Semiconductor lasers, also known as diode lasers, are devices that generate coherent light through the process of stimulated emission. These lasers are widely used in various applications such as telecommunications, optical storage, and laser printing. One of the important factors that affect the performance of semiconductor lasers is the refractive index.The refractive index of a material determines how light propagates through it. In the case of semiconductor lasers, the refractive index of the active region, where the laser light is generated, plays a crucial role in determining the laser's characteristics. By adjusting the refractive index, one can control the wavelength and output power of the laser.The refractive index of a semiconductor material can bemodified by changing the composition of the material or by applying an external electric field. For example, by varying the concentration of dopants in the active region, one can change the refractive index and thus the wavelength of the emitted light. This is the principle behind tunable semiconductor lasers.Another important parameter that affects the performance of semiconductor lasers is the current. The current flowing through the laser diode determines the number of electrons and holes that are available for the process of stimulated emission. By increasing the current, one can increase the population inversion and thus the output power of the laser.However, increasing the current beyond a certain point can also lead to undesirable effects such as thermal runaway and catastrophic optical damage. Thermal runaway occurs when the heat generated by the laser exceeds its ability to dissipate heat, leading to a rapid increase in temperature and a decrease in performance. Catastrophic optical damage occurs when the laser is operated at highcurrents for an extended period, leading to irreversible damage to the laser diode.To optimize the performance of semiconductor lasers, it is important to carefully control the current and monitor the temperature. This can be achieved through the use of feedback control systems that adjust the current and temperature based on the laser's operating conditions. By maintaining the laser within its safe operating range, one can ensure reliable and efficient operation.中文回答：半导体激光器，也被称为二极管激光器，是通过受激辐射的过程产生相干光的装置。

激光器驱动电路中英文翻译

中文2540字Laser driver circuitSmall changes will directly semiconductor laser drive current to the output intensity fluctuation. To stabilize the output power semiconductor laser, V oltage negative feedback principle to design a constant current driving circuit comprises a soft starting and current limiting protection circuit based on; At the same time, according to the need of the light source is modulated to eliminate the influence of background light and, integrated laser modulation circuit comprises a crystal oscillation circuit and divider circuit design. Making the specific circuit and complete the relevant experimental. The experimental results show that the circuit can provide a driving current of high stability, Current stability up to 0.05%; Soft start and current-limiting protection circuit can protect the semiconductor laser and enhance the impact capability. Modulation circuit generates a carrier signal needed for laser diode modulation and direct to complete the output light modulation, The switch can be conveniently realized from 256Hz to 512kHz range of 12 kinds of commonly used modulation frequency selection.Semiconductor laser with its excellent characteristics, high efficiency, simple structure, small is widely used in scientific research, national defense, medical, and other areas of processing, its drive technology becomes more and more important. Semiconductor laser is the ideal electron - photon direct conversion devices, quantum efficiency is very high, the current small changes will lead to a great change, the output light intensity of the therefore, semiconductor laser drive current requirements is very high. Driving technology of semiconductor laser usually adopts constant current drive mode, this work, through the principle of negative feedback control loop, directly provide the effective control of the drive current. In addition, the transient current or voltage spikes, and overcurrent, overvoltage will damage the semiconductor laser drive circuit, therefore should be considered in the protection circuit against electric shock measures and special.In some applications, DC semiconductor lasers produce DC drive light in the measurement process is vulnerable to interference from ambient light slow change, which could not be separated from the environment light required DC optical signal, the signal-to-noise ratio is too small, so to carry on the modulation. When the high-speed modulated semiconductor lasers, there will be dynamic characteristics iscomplex, such as the relaxation oscillation, since the pulse and multi-pulse phenomena. In this paper, experiments were conducted to study the characteristics of low frequency modulation. Semiconductor laser output is stable, and can be directly modulated, it has been widely applied in optical system, is the preferred source sensor system. This paper describes the design of a high stability driving current, modulation, simple operation and low cost driving circuit for the light source of optical fiber systems.In this paper, the design of driving the semiconductor laser modulation circuit composed of four parts, including constant current circuit, a soft start, current limit protection and modulation signal generating circuit. The constant current circuit to generate a high stable drive current. Soft start is the role of eliminating surge may be present in the circuit, to prevent the harm of surge for laser. To avoid damage due to overcurrent caused by semiconductor laser can not be restored, then adding current-limiting protection in a driver circuit. Circuit to realize the modulation and frequency can be adjusted to generate a modulated signal.The constant current circuit is shown in figure 1, The in-phase end voltage reference Vr into A1 op amp, the operational control amplifier conducting level, and thus to obtain the corresponding output current. The output current generated by sampling voltage sampling resistor Rs, the sampling voltage is amplified as the inverting input voltage feedback voltage feedback amplifier A1, and voltage and the in-phase input end of comparison, Q2 to adjust the output voltage through the triode, adjustment and output current of semiconductor lasers, so that the whole closed-loop feedback system in the dynamic balance.AFigure 1 Constant current mapBecause the switch instantaneous in power supply generates a voltage, current surge, as well as the surge interference effects are likely to cause the breakdown andthe damage of the semiconductor laser, and therefore must be in the design of soft start circuit drive laser, namely the use of the charge and discharge of RC circuit, delay time, the specific circuit as shown in Figure 2 as shown in. Switch S1 is closed, the current through the resistor R1 and capacitor C3 to charge, the base electrode of the triode Q voltage gradually rises. As the capacitor charging and the conduction of the triode, output voltage V o is achieved from 0 to the maximum rise slowly, until the capacitor charge saturation, the voltage and current stabilizing. When the power supply is disconnected, the process of reverse, so as to realize the current and voltage decreases slowly.Figure 2 Soft start circuit diagramLaser soft start time and the charging capacitor and the corresponding resistance, when the capacitor charging tends to saturation, the output voltage soft start circuit can achieve maximum. Power supply voltage is V I, the capacitor voltage is V o, the capacitor charging formula:1(1)RC iV V e-=-According to this formula can calculate the electric charge and discharge time.Semiconductor laser with other devices, have normal working current, if the current exceeds this range, the laser will be damaged, therefore must restrict current laser in the set range.Emitter voltage transistor Q2 as the feedback voltage terminal phase in A3 op amp, when the feedback voltage is less than the limit voltage V, A3 op amp output low level, the transistor Q1 is turned on, this time by a triode Q2 output voltage feedback voltage is greater than the limit; when the voltage of V, A3 op amp output high, triode Q1 cutoff, this limits the triode Q2 emission increases very current, and is limited to a specific value. So even if the current caused by Vr control voltage exceeds the setvalue, the triode Q1 and Q2 are connected in series, so the total current will be clamped in the setting current value.Modulation signal generating circuit is composed of a crystal oscillating circuit and divider circuit is composed of two parts, used to generate the high stability of frequency, duty cycle square wave signal is stable. Crystal oscillating circuit directly generated by the active oscillator, oscillation frequency is 1MHz. Frequency divider circuit composed of a CMOS integrated circuit 4040.1MHz pulse signal after the frequency by 4040, pin output frequency from the switch is selected, the duty cycle is 50%, amplitude is 5V square wave signal. The modulation frequency dividing frequency were 256Hz, 512Hz, 1kHz, 2kHz,4kHz,8kHz,16kHz,32kHz, 64kHz128kHz, 256kHz, 512kHz..Driving an important technical parameters of circuit for current stability. Current stability is in a certain period of time, several measurements through the current size of the semiconductor laser, namely the ratio of output current stability for the relative change amount and input current, stability calculation, there will be current relative change is defined as the measurement of the maximum and minimum values, will measure the average value as the input current value.Drive circuit based on voltage negative feedback principle, by constant current drive mode to realize the control of the injection current and output power of semiconductor laser, and it can provide high stable output current, current stability 0.05%. Drive circuit with soft start, current limit circuit protection, reduce the damage of semiconductor laser to surge breakdown and current, the modulation circuit and the drive circuit effectively combined, realize the frequency is, the development of new technology of optical fiber communication is essential.The causes of dispersion: One is the light emitted by the light source is not monochromatic light; two is the modulation signal has a certain bandwidth.The dispersion of the classification: By different modes or different frequency (or wavelength) light signal components, transmission in optical fibers, due to the physical phenomenon of different group velocities cause signal distortion is called fiber dispersion. The fiber dispersion is divided into mode dispersion (or intermodal distortion), material dispersion and waveguide dispersion. After two kinds of dispersion is the dispersion a pattern, also known as intra-modal dispersion.Dispersion harm: Fiber dispersion in optical signal waveform distortion, performance for the pulse width, it is the time domain characteristics of optical fiber.In digital communication system, pulse broadening of optical signal is an important index. Pulse broadening is too large can cause adjacent pulse gap decreases, the adjacent pulse will overlap and regenerative repeater decision errors occur, which increases the BER, transmission bandwidth narrowing, limit the transmission capacity of optical fiber.Said method of dispersion: Commonly used dispersion representation has maximum time delay for $S, pulse width R and optical bandwidth of 3dB B three. The maximum time delay difference delay description fiber in the fastest and most slow wave component. Used to describe the effect of fiber dispersion on the transmission signal pulse broadening and optical fiber bandwidth. A section of optical fiber as a network analysis of the dispersion characteristics, the available time domain method and frequency domain method. When in the time domain analysis, dispersion effect is represented by the pulse broadening, and analyzed in the frequency domain, the transmission bandwidth said.激光器驱动电路半导体激光器驱动电流的微小变化将直接导致其输出光强的波动。

半导体激光器材料

半导体激光器材料
半导体激光器，也被称为激光二极管，是一种使用半导体材料作为工作物质的激光器。

由于物质结构上的差异，不同种类的半导体激光器产生激光的具体过程会有所不同。

在制作半导体激光器时，需要使用满足一定要求的半导体材料。

这些要求包括：
1. 直接带隙：只有具有直接带隙的材料，在电子-空穴复合产生光子时，才无需声子参加，从而有较高的发光效率。

2. 晶格匹配：作用层和限制层的晶格需要匹配，以确保激光器的性能。

3. 晶体完整性：要求晶体完整，位错密度、有害杂质浓度应尽量小。

常用的半导体激光器工作物质包括砷化镓（GaAs）、硫化镉（CdS）、磷化铟(InP)、硫化锌(ZnS)等。

激励方式有电注入、电子束激励和光泵浦三种形式。

此外，半导体材料是一类具有半导体性能的电子材料，其导电能力介于导体与绝缘体之间，电阻率约在1mΩ·cm～1GΩ·cm范围内。

按照化学组成、
结构和性能的不同，半导体材料可以分为元素半导体、无机化合物半导体、有机化合物半导体和非晶态与液态半导体等。

总的来说，对于半导体激光器的应用和发展，其材料的选择和处理是非常重要的。

半导体激光基本原理

半导体激光基本原理English:Semiconductor lasers, also known as diode lasers, operate by using the principle of stimulated emission to generate coherent light. They are typically constructed from a semiconductor diode structure, and when a current is applied to the diode, it generates a population inversion of electrons and holes in the active region. This results in the emission of photons as the electrons transition from the higher energy state to the lower energy state. The photons then bounce back and forth between the mirrors at either end of the diode, stimulating further emission and amplifying the light. This process ultimately leads to the production of a highly concentrated, directional, and monochromatic beam of light, which is the defining characteristic of a laser.中文翻译:半导体激光器，也称为二极管激光器，通过使用受激发射原理来产生相干光。

【半导体激光器国家标准（二）】

半导体激光器国家标准（二）3.1.32 远场光强分布Far field intensity distribution在距离远远大于激光光源瑞利长度的接收面上得到的光强分布。

3.1.33 近场光强分布Near field intensity distribution激光器在输出腔面（AR面）上的光强分布。

3.1.34 近场非线性Near field non-linearity热应力引起半导体激光器阵列或巴条中各个发光单元在垂直p-n结的方向上发生的位移，导致激光器阵列或巴条近场各个发光单元不在一条直线上，又称为"smile"效应。

3.1.35 偏振Polarization半导体激光器是利用光波导效应将光场限制在有源区内，使光波沿着有源区层传播，并通过腔面输出，半导体激光器的偏振特性与电场和磁场两个空间变量有关，对于横向电场（TE）偏振光，只存在（Ey，Hx，Hz）三个分量，对于横向磁场（TM）偏振光，只存在（Ex，Ez，Hy）三个分量。

半导体激光器偏振特性优劣通常用偏振度来表征，偏振度为两种偏振态的光功率差与光功率和的比值，通常以百分比表示。

3.1.36 热阻Thermal resistance热量在热流路径上遇到的阻力，反映介质或介质间的传热能力的大小，激光器产生1W 热量所引起的温升大小，单位为℃/W或K/W。

3.1.37 波长-温度漂移Wavelength-temperature shift半导体激光器稳定工作时，结温每升高1℃所引起的波长变化，单位是nm/K。

3.1.38 斜率效率Slope efficiency激光器额定光功率的10％和90％对应的光功率差值△P与相应工作电流的差值△I的比值称为斜率效率。

3.1.39 光功率-电流曲线扭折Optical power-current curve kink光功率-电流曲线上出现的非线性变化的拐点。

扭折表征了光功率与工作电流的线性关系的优劣。

光纤中英文缩略语对照

AAAS Automatic addressing system 自动寻址系统AB Absorption Band 吸收带Address Bus 地址总线Aligned Bundle 定位光纤ABC Absorbing Boundary Condition 吸收边界条件Address Bus Control 地址总线控制Automatic Bandwidth Control 自动带宽控制Automatic Bias Compensation 自动偏置补偿ABCs Automatic Base Communication System 自动基地通信系统ABM Asynchronous Balanced Mode 异步平衡模式AC Access control 访问控制(对指定用户而言)或接入控制Access coupler 通路耦合器ACA Adaptive channel allocation 自适应信道分配Adjacent channel attenuation 相邻信道衰减ACC Area communication center 区域通信中心Automatic control and checking 自动控制和检查ACCE Area communication center equipment 区域通信中心设备ACCH Associaed control channel 相关控制信道ACCI Adaptive cycle cellinsertion 自适应循环信元插入ACCS Automatic checkout and control system 自动检验与控制系统ACD Automatic call distribution 自动呼叫分配Average core diameter 平均纤芯直径ACDMA Advanced code division multiple access 高级码分多址ACM Access control module 接入控制模块ACNS Advanced communications operations network service 高级通信网业务ACPI Automatic cable pair identification (光,电)缆线对自动识别ACS Access control system 接入控制系统ACT Automatic code translation 自动译码,自动码型变换AD Avalanche diode 雪崩二极管Average deviation 平均偏移,平均偏差ADM Add/drop multiplexer. 插/分复用器,上/下复用器,一种数字通讯设备ADN Active destination node 有效地址节点Add/Drop node 上/下节点,插/分节点ATM Data Network 异步转移(传递)模式数据网络ADSL Asymmetrical digital subscriber loop 非对称数字用户环路ADSS Automatic data switching system 自动数据交换系统AE Actinoelectric effect 光(化)电效应Aperture effect 孔径效应AFPM Asymmetric Fabry-Perot saturable absorber 反共振法布里-珀罗可饱和吸收器AFS Acoustic fiber sensor 光纤声传感器AFTV All-Fiber video distribution 全光纤电视分配AGC Automatic Gain Control 自动增益控制AGCC Automatic Gain Control Calibration 自动增益控制校准AN Access network 接入网Access node 接入节点Active network 有源网络AOC All-optical communication 全光通信AOD Active optical device 有源光器件AOF Active optical fiber 有源光纤Attenuation optimized fiber 衰减最佳化光纤AOFC Aerial optical fiber cable 架空光纤AOI Active output interface 有源输出接口AON All-optical network 全光网络AOS Addressable optical storage 光(束)寻址存储,一种存储方式,通过电-机,电-光或声-光等方法使光束偏转,进行寻址,以代替移动记录煤质来实现信息的写入和读出.此法较容易实现大容量和高速度存储.AOTA All-optical towed array 全光牵引阵列AOTF Acoustic-optic tunable filter 声光可调滤波器AOWC All-optical wavelength converter 全光波长转换器AP Absorption peak 吸收峰APD Avalanche photon diode 雪崩光电二极管APOF All plastic optical fiber 全塑光纤APPN Appropriation 占用APS Automatic Protection Switching. 自动保护开关,用于器件或光路切换ARP Address resolution protocol 地址解析协议,在TCP/IP网络环境下,用来把IP地址转换成相应的物理地址的一种协议ARPM Amplitude ratio and phase modulation 振幅比和相位调制ARROW Anti-resonant reflecting optical waveguide 反共振反射光波导ASA American standards association 美国标准协会Automatic spectrum analyzer 自动频谱分析仪ASB Asymmetric switched broadband 非对称交换宽带ASE Amplification of spontaneous emission 受激发射放大ASEN Amplified spontaneous emission noise 放大自激发射噪声ASEP Amplified spontaneous emission power 放大自激发射功率ASF Air-supported fiber 空气间隙光纤ASG Arseno silicate glass 砷硅玻璃ASI Alarm status indicator 告警状态指示器Alarm status interface 告警状态接口ASIC Application-specific integrated processor 专用集成电路ASK Amplitude shift-keyed 幅移键控,用改变载波幅度的方法对载波进行数字调制ASLC Analogue subscriber line circuit 模拟用户线电路27ATM Asynchronous Transfer Mode. 异步转移(传递)模式,一种传递方式,在这一方法中,把信息组成信元,信元的再现取决于要求的或瞬时的比特率.从这一意义上看,这种传递方式是异步的.也可以用统计方式和确定方式的属性含义来修饰这种传递方式.ATME Automatic transmission measuring equipment 自动传输测量设备ATMOS ATM optical switch 异步转移(传递)模式光交换ATM-PON Asynchronous transfer mode-passive optical network 异步转移(传递)模式-无源光网络ATQW Asymmetric triple quantum well 非对称三重量子阱ATT Attenuator 衰减器,衰耗器Automatic target tracking 自动目标跟踪AV Analogue video 模拟视频,模拟电视AWDS Active wavelength demodulation system 有源波长解调系统AWG Array waveguide grate 阵列波导光栅Arbitrary-waveform generator 任意波形发生器AWGM Array waveguide grate multiplexer 阵列波导光栅复用器BBAP Broad band access point 宽带接入点BBA Broad band access 宽带接入BBC Broad band coupler 宽带耦合器BBCC Broad band communication channel 宽带通信信道BBF Base band filter 基带滤波器BBLED Broad band light-emitting diode 宽带光发射二极管BBTFP Broad band tunable Fabry-Perot filter 宽带可调法布里-珀罗滤波器BC Bandwidth compression 带宽压缩BDSL Broad band digital subscriber line 宽带数字用户线B-EDFA Backward pumped EDFA 后向泵浦掺铒光纤放大器BEF Band elimination filter 带阻滤波器Beam expanding fiber 光束扩展光纤BEFL Brillouin/Erbium fiber laser 布里渊/掺铒光纤激光器BER Bit error rate. 误码率BEX Broad band exchange 宽带交换BF Band filter 带通滤波器Beat-frequency 拍频,查频Branching filter 分路滤波器,分支滤波器BFA Brillouin fiber amplifier 布里渊光纤放大器BFF Biconical fiber filter 双锥光纤滤波器BFI Beat- frequency interferomenter 拍频干涉仪BFOC Bayonet fiber optic connector 卡口式光纤连接器B-FOG Brillouin fiber optic gyro 布里渊光纤陀螺仪BFOS Basic fiber optical subsystem 基本光纤子系统,由一个光发送机,一个光接收机和光纤链路串连组成的系统,它提供了上述单元之间的光学通道BFRL Brillouin fiber ring laser 布里渊光纤循环激光器BG Band gap 能带隙,某材料的导带和价带之间的能量差Base group 基群,在特定频率范围内的许多载波通路的总称,它组成一个基本单元,一边进一步调制到最终频带上去Blazed grating 定向光栅BGA Back-ground absorption 背景吸收BGS Brag grating sensor 布拉格光栅传感器BH Barrier height 势垒高度,在半导体中从势垒的一边到另一边的电位差BIP-EDFA Bidirectonal pumped EDFA 双向泵浦掺铒放大器BIP-ISDN Broad band, intelligent and personalized ISDN 宽带化,智能化和个人化的综合业务数字网B-ISDN Broad band intelligent services digital network 宽带综合业务数字网BIT Broad band interface tester 宽带接口测试仪BJ Bundle jacket 光纤束护套,光(电)缆内所有构件共有的外部保护层BL Band-limited 频带限制Black light 不可见光BLD Bistable laser diode 双稳激光二极管BLSR Bidirectional Line Switched Ring. 双向线路交换环BOA Bifurcation optically active 分支光有源BOAN Business-oriented optical access network 面向商业的光接入网BOCS Birefringent optical circuit synthesis 双折射光电路合成BOD Balanced optical detector 平衡光检测器BOMUDEX Bidirectional optical multiplexer/demultiplexer 双向光复用器/解复用器BOTDA Brillouin optical biber time domain analysis 布里渊光纤时域分析BOTDR Brillouin optical biber time domain reflectometry 布里渊光纤时域反射法Bragg grating 布拉格光栅BRF Birefringent fiber 双折射光纤Birefringent tuning filter 双折射调谐滤波器BS Base station 基站Beam splitter 分光器,分束器Beam spreader 光束扩散器,使平行的入射光束作小角度的展开Ccable 针对光纤而言,是指一根或多根光纤组成的有保护的光缆carrier 运营商A company that provides a communications circuit. Carriers are either public, such as AT&T andSprint, or private.CATV 有线电视CCF Chirp compensating fiber 啁啾补偿光纤CD Chromatic dispersion 色散CDMA Code division multiple access 码分多址,一种调制方式.数字信息靠它以一种扩充带宽的格式进行编码.在同一带宽内可以同时有好几个传输发生,靠每个传输所用唯一码的正交度来减小相互干扰center wavelength 中心波长central office 中心局CG-SOA Clamped-gain SOA 固定增益半导体光放大器channel 信道,在光纤通讯DWDM中,用来传输光信号chromatic dispersion 色散cladding 纤芯外部包裹的材料,折射率比纤芯材料低CLEC Competitive local exchange carrier.CO Central office. 中心局Coating 保护膜coaxial cable 同轴电缆C-OFDR Coherent optical frequency domain reflectiometry 相干光频域反射法COLIDAR Coherent light detecting and ranging 相干光检测和测距,相干激光雷达COP Coherent optical processor 相干光处理机COQ Channel optimized quantizer 信道最佳化量化器COTDR Coherent detection OTDR 相干检测光时域反射计CPW Circular polarized wave 圆极化波,圆偏振波CoPlanar waveguide 共面波导CPWDM Chirped-pulse wavelength-division-multiplexing 线性脉冲波分复用critical angle 临界角CTB Composite triple beat 复合三次拍频,两个或多个信号通过具有非线性特性的设备时,由于产生多个不需要的信号,落在视频载频附近的三次拍频及三阶互调产物称为复合三次差拍,因而产生干扰CTC Channel traffic control 信道业务量控制CTV Conference TV 会议电视DD&C-SW Delivery-and-coupling type optical switch 分配和耦合型光开关Dark fiber 暗光纤,备用光纤dB Decibel. 相对功率的对数表达,在光传输中,通常用来描述损耗DC Directional coupler 定向耦合器Depressed-cladding 凹陷型包层Dispersion compensation 色散补偿Diversity combiner 分集和路器Drift compensation 漂移补偿Drop cable 引入光(电)缆,用于分配网络户外部分的光缆DCA Dynamic channel assignment 动态信道分配DCC Digital communication channel 数据通信信道Digital control channel 数字控制信道Diversity cross connect 数字交叉连接DCF Dispersion compensation fiber 色散补偿光纤,具有很大负波导色散的光纤.Dual coated fiber 双涂覆光纤DCM Directional coupler modulator 定向耦合调制器Dispersion compensator module 色散补偿模块DCS Dynamic channel Xion 动态信道选择DCSM Depressed cladding single-mode (fiber) 凹陷型包层单模光纤DD Delay distortion 时延失真Differential detection 差分检测Drift-diffusion 漂移扩散DDE Dynamic data exchange 动态数据交换DD-EDFA Dispersion decreasing erbium-doped fiber amplifier 色散降低掺铒光纤放大器DDF Dispersion decreasing fiber 色散降低光纤DFB Distributed feedback laser. 分布反馈布拉格激光器DFCF Dispersion flat compensation fiber 色散平坦补偿光纤DFF Dispersion flat fiber 色散平坦光纤Dispersion flat single mode fiber 色散平坦单模光纤DFOS Distributed fiber optic sensing 分布式光纤传感器Dual frequency optical source 双频光源DFS Distributed fiber sensor 分布式光纤传感器DFSM Dispersion flattened single mode 色散平坦单模DM Dispersion management 色散管理DMF Dispersion management fiber 色散管理光纤diffraction grating 衍射光栅diode An electronic device that conducts electricity in one direction only. The simplest semiconductordevices are diodes.dispersion 色散,一种光传输过程中的现象DOAP Division-of-amplitude photopolarimeter 分幅光偏转计DOES Double-heterostructure optoelectronic switch 双异质结光电开关DOP Degree of polarization 偏转度DOS Digital optical switch 数字光开关DPON Domestic passive optical network 国内无源光网络DRB Double Raleigh backscattering 双瑞利背向散射DS Dispersion shift 色散位移DSCF Dispersion slope compensation fiber 色散斜率补偿光纤DSF Dispersion-shifted fiber. 色散位移光栅,单模光纤的一种,在1550nm处色散为零,用于DWDM系统中DSL Digital subscriber line. 数字用户线,利用现有公用电话网的二线用户环路作为综合业务数字网基本用户/网络接口,并实现传输速率为160kbit/s的双数字传输的用户线路. Distributed Service Logic 分配式服务逻辑DS-SMF Dispersion shifted single mode fiber 色散位移单模光纤DU Dispersion-unshifted (single mode fiber)非色散位移光纤(单模光纤)DWDM Dense wavelength division multiplexing. 密集波分复用器EEA Electro absorption 电吸收EAM Electro absorption modulator 电吸收调制器EBL Expanding beam laser-scan 扩展束激光扫描ECC Embedded communications channel 嵌入式通信信道ECL External cavity laser 外腔激光器External cavity mode-locked semiconductor laser 外腔锁模半导体激光器ECM Echo cancellation method 回波消除法ECMLL External cavity mode-locked laser 外腔式锁模激光器ECSL Extended-cavity semiconductor laser 扩展式腔半导体激光器External cavity semiconductor laser 外腔式半导体激光器EDF Erbium-doped fiber 掺铒光纤EDFA Erbium-doped fiber amplifier 掺铒光纤放大器EDFFA Erbium-doped Fluoride fiber amplifier 掺铒氟化物光纤放大器EDFL Erbium-doped fiber laser 掺铒光纤激光器EDFLS Erbium-doped fiber laser source 掺铒光纤激光源EDFRS Erbium-doped fiber ring laser 掺铒光纤环激光器EDPA Erbium doped planar amplifier 掺铒平面放大器EDWA Erbium doped waveguide amplifier 掺铒波导放大器EE-LED Edge-emitting LED 边发射发光二极管,其光输出功率是从异质生长层之间发射出来的发光二极管.与表面发射的发光二极管相比,它通常具有较高的输出功率,与光纤和集成光路的耦合效率也较高EELS Edge-emitting laser 边发射激光器,一种边发射的发光激光器,它的发光区被限制在一边的很小部分,有限的光发射区改善了与光纤和集成光路的耦合效率EFBGL Erbium fiber Bragg grating laser 铒光纤布拉格光栅激光器EML Eroabsorption modulated laser 电吸收调制激光器EOM Electro-optical modulator 电光调制器,通常以调制信号为外加电场,改变电光晶体的双折射特性,从而达到改变光的参数的目的.电光调制和其他调制方法相比,器件结构稳固,不易失调.缺点是损耗较大,调制电压较高,调制电源功率损耗较大,调制频率与带宽很高EOTF Electro-optic tunable filter 电光可调谐滤波器EP Eye pattern 眼图,为评价数字传输系统的特性,把接收到的随机基带数字信号波形同步显示在示波器屏幕上.所出现的图形形状像人眼,故称为眼图.从眼图可一目了然地看出此传输系统码元间干扰的程度ER 112Ethernet 以太网FFDDI Fiber Distributed Data Interface.光纤分布式数据接口,一种光纤通信标准.采用单一的比特流格式而不是采用一组字节格式的光数据传信率.FE Fast Ethernet. 快速以太网fiber-optic cable A data transmission medium that uses glass or plastic fibers, rather than copper wire, to carrymodulated pulses of light; also called optical fiber.Fibre Channel A technology for transmitting data between computer devices at data rates X 100 to 400 MBps overoptical fiber or copper. Fibre channel is optimized for connecting servers to shared storage devices andfor interconnecting storage controllers and drives.FWM Four-wave mixing. 四波混频G, HGbps Gigabits per second. 吉比特每秒GBps Gigabytes per second. 吉位每秒GE Gigabit Ethernet. 前兆以太网GHz Gigahertz (one billion hertz). 吉赫兹graded-index fiber 渐变折射率光纤GIMM Graded Index Plasec-Cladding Fiber 渐变折射率多模(光纤)IILEC Incumbent local exchange carrier. Term used to describe the primary existing carriers, formerly knownas Regional Bell Operating Companies (RBOCs); distinguished X new competitive carriers comingout of deregulation of the telecommunications industry.IL insertion loss 插入损耗IP Internet Protocol. 网际协议,TCP/IP网络体系结构中的网际层协议,用以提供无连接的数据报服务IR Intermediate reach. Distance specification for optical systems that operate effectively X 3 to 20 km.ISO International Organization for Standardization. 国际标准化组织ITU International Telecommunication Union. 国际电信联盟,简称国际电联ITU grid ITU 标准指定激光波长,以193.1 THz (1552.52 nm)为中心,基于100 GHz 频率间隔IXC Interexchange carrier. 交换机间载波J, K,Llambda A data channel in a WDM or DWDM system assigned to a specific wavelength. Lambda andwavelength are sometimes used interchangeably.LAN Local area network. 局域网,一种小范围内采用的高速,低误码的网络形式.以太网,FDDI 光纤分布式数据接口和令牌网被广泛的应用在局域网技术中.并列的还有城域网MAN 和广域网WANLaser 激光LD laser diode. 激光二极管LEC Local exchange carrier. 市话载波Local exchange center 市内交换中心LED Light emitting diode. 光二极管loss budget The amount of overall attenuation allowable in a system.LR Long reach. 远距离Link restoration 链路恢复Local record 本地纪录Location register 位置寄存器MMAN Metropolitan area network. 城域网,比局域网的范围宽一些,通常在一个城市范围内,连接全球网络的长途骨干部分和接入部分.material dispersion 材料色散Mbps 兆比特每秒MM fiber Multimode fiber. 多模光纤modal dispersion 模式色散MPLS MultiProtocol Label Switching. 多协议标签交换MTBF Mean time between failure. 平均故障间隔时间MUX See multiplexer. 多路复用器NNAS Network attached storage. Central data storage system that is attached to the network that it serves. Seealso SAN.NDSF Non-dispersion-shifted fiber. 非色散位移光纤,单模光纤的一种,零色散点在1310nm 处.nonlinearity 非线性,指电路,光电器件,光纤的信号中产生的不良因素.NZ-DSF Non-zero dispersion-shifted fiber. 非零色散位移光纤,单模色散位移光纤的一种,在1530~1550nm区色散不为零,即G.655单模光纤,用于1530~1550nm以外区域的信号传输,能够扩大传输带宽同时还减小光纤的非线性效应.OOA Optical amplifier. 光放大器OADM Optical add/drop multiplexer. 光插/分复用器OC Optical carrier. 光载波,为SONET 光传输定义的一系列物理协议(如OC-1, OC-3, OC-12)optical channel spacing 光通道间隔optical fiber fiber optic cable. 光纤optical link lossbudgetThe range of optical loss over which a fiber optic link will operate and meet all specifications,expressed relative to the transmitter output power.OTDR Optical time domain reflectometer. 光时域反射计,利用反射测量技术测量光波导特性的一种仪器PPDH Pleisiochronous Digital Hierarchy. 准同步数字系列photodetector An optoelectronic transducer such as a PIN photodiode or avalanche photodiode.PD photodiode 光电二极管,一种能够将光转化为电的半导体器件photon 光子,一种电磁能量子photonic 光电,一种用以描述A term used to describe communications using photons, analogous to electronic for electroniccommunications.physical layer 物理层,开放式系统互连参考模型的首层.全光技术例如DWDM即是工作在物理层.PMD Polarization mode dispersion. 偏振模式色散POS Packet over SONET. A technology in which IP packets are mapped into SONET frames withintervening use of an ATM layer.protocoltransparencyAbility of systems to transport information without being aware of higher layer protocols. Such systemsare also sometimes called protocol agnostic.PSTN Public switched telephone network. 公共交换电话网,用户提供电话业务的语音传输网,其交换中心分布在较广的地理范围内,并用通信线路连接起来.交换中心之间和交换中心与交换局之间遵守通信公司自己制定的信令系统.RRayleigh scattering The scattering of light that results X small inhomogeneities of material density or composition.refractive index 折射率regenerator A device that regenerates optical signals by converting incoming optical pulses to electrical pulses,cleaning up the electrical signal to eliminate noise, and reconverting them to optical pulses for output;also called a regenerative repeater.SSAN Storage area network. A dedicated, centrally managed, secure information infrastructure that enablesany-to-any interconnection of servers and storage systems. See also NAS.SDH Synchronous Digital Hierarchy. 同步数字系列,由欧洲标准制定的一种采用ATM和SONET在光纤上European standard that defines a rate and format standards for transmission of optical signals over fiber using ATM and SONET. In contrast to PDH, SDH providesfor a synchronous multiplexing scheme. See also PDH; SONET.short reach See SR.SM fiber Single-mode fiber. 单模光纤,其纤芯很小,只能通过一个模式.SNR Signal-to-noise ratio. 信噪比,用于衡量信号质量的参数SONET Synchronous Optical Network. 同步光网络,由Bellcore开发的一个接口标准,广泛应用在电信中的光纤高速同步传输SR Short reach. Distance specification for optical systems that operate effectively up to 3 km.step-index fiber Fiber that has a uniform index of refraction throughout the core.TT-carrier Generic designator for any of several digitally multiplexed telecommunications carrier systems. Thetwo most common are T1, which transmits DS-1 formatted data at 1.544 Mbps, and T3, which transmitsDS-3 formatted data at 44.736 Mbps.TDM Time-division multiplexing. 时分复用Transponder 转发器,用在DWDM系统中,能够接受信号,并且将其转换为波长信号以便与其他波长复用.U, WUPSR Unidirectional Path Switched Ring. 单向通道交换环WAN Wide area network. 广域网waveguide 波导,一种限制和引导电磁波传输的材料介质.光纤就是波导的一个例子.。

半导体照明术语对照表

1-10
LED模块
LED module
由单个或多个发光二极管芯片和驱动电路、控制电路封装在一起、带有连接接口并具有发光功能且不可拆卸的整体单元。
LED模块
1-12
LED组件
LED discreteness
由LED或LED模块和电子元器件组合在一起，具有一定功能并可维修或拆卸的组合单元。
LED元组件
1-13
器件发射的光通量ФV与器件的电功率（正向电流IF乘以正向电压VF）的比值。
光通量效率
七、色度量术语
7-01
显色指数
colour rendering index
光源显色性的度量。以被测光源下物体的颜色和参照光源下物体的颜色的相符程度来表示。国际照明委员会CIE把太阳的显色指数定为100。
演色指数
7-02
海峡两岸
信息产业技术标准论坛
半导体照明术语对照表
2009年2月
序号
大陆术语
英文
定义
台湾地区
术语
一、基本术语
1-01
半导体
semiconductor
两种载流子引起的总电导率通常在导体和绝缘体之间的一种材料，这种材料中的载流子浓度随外部条件改变而变化。
半导体
1-02
半导体器件
semiconductor device
注入LED的电子-空穴对数与注入有源区的电子-空穴对数之比。
注入效率
1-16
外量子效率
outer quantum efficiency
逸出LED结构的光子数与注入LED的电子-空穴对数之比，等于内量子效率与出光效率和注入效率的乘积。
外部量子效率
二、LED类型
2-01

光电子单词表中英对照

1. semiconductor: 半导体，常温下导电性能介于导体(conductor)与绝缘体(insulator)之间的材料。

2. light-emitting diode (LED): 发光二极管3. laser diode (LD): 半导体激光器4. photodiode: 光电二极管5. electrons: 电子6. holes: 空穴7. energy gap: 能隙8. photon: 光子9. insulator: 绝缘体10. transistor: 晶体管11. solar cell: 太阳能电池12. quantum dot: 量子点13. doping: 掺杂。

14. Pauli exclusion principle: 泡利不相容原理。

15. Fermi level: 费米能级16. valence band: 价带17. conduction band: 导带18. optical fiber: 光纤19. energy level: 能级。

20. electron–hole pair: 电子-空穴对。

21. impurity: 杂质。

22. dopant: 掺杂剂。

23. intrinsic (pure) semiconductor: 纯半导体。

24. p-type semiconductor: P 型半导体25. n-type semiconductor: N 型半导体。

26. p–n junction: PN 结27. space charge region(depletion layer): 空间电荷区(耗尽层)。

28. forward-bias voltage: 正向偏置电压29. ground state: 基态30. upper level: 上能级31. lower level: 下能级33. electromagnetic radiation:电磁辐射。

半导体激光

感谢观看
通常激光器封装形式主要包括单管、Bar条、阵列（Stack）、光纤耦合模块四种形式，其中光纤耦合模块主要用作光纤激光器的泵浦光源。
应用
半导体激光器是成熟较早、进展较快的一类激光器，由于它的波长范围宽，制作简单、成本低、易于大量生产，并且由于体积小、重量轻、寿命长，因此，品种发展快，应用范围广，已超过300种，半导体激光器的最主要应用领域是Gb局域网，850nm波长的半导体激光器适用于Gh局域网，1300nm -1550nm波长的半导体激光器适用于1OGb局域网系统。半导体激光器的应用范围覆盖了整个光电子学领域，已成为当今光电子科学的核心技术。半导体激光器在激光测距、激光雷达、激光通信、激光模拟武器、激光警戒、激光制导跟踪、引燃引爆、自动控制、检测仪器等方面获得了广泛的应用，形成了广阔的市场。1978年，半导体激光器开始应用于光纤通信系统，半导体激光器可以作为光纤通信的光源和指示器以及通过大规模集成电路平面工艺组成光电子系统。由于半导体激光器有着超小型、高效率和高速工作的优异特点，所以这类器件的发展，一开始就和光通信技术紧密结合在一起，它在光通信、光变换、光互连、并行光波系统、光信息处理和光存贮、光计算机外部设备的光祸合等方面有重要用途。半导体激光器的问世极大地推动了信息光电子技术的发展，到如今，它是当前光通信领域中发展最快、最为重要的激光光纤通信的重要光源。半导体激光器再加上低损耗光纤，对光纤通信产生了重大影响，并加速了它的发展。因此可以说，没有半导体激光器的出现，就没有当今的光通信。双异质结激光器是光纤通信和大气通信的重要光源，如今，凡是长距离、大容量的光信息传输系统无不都采用分布反馈式半导体激光器（DFB一LD)，半导体激光器也广泛地应用于光盘技术中，光盘技术是集计算技术、激光技术和数字通信技术于一体的综合性技术。

自混合干涉效应

⾃混合⼲涉效应⾃混合⼲涉效应在振动测量中的应⽤现状摘要：近年来，随着半导体激光器技术的不断发展，利⽤半导体激光器的⾃混合⼲涉效应进⾏物理量的测量，成为近代光学⼲涉测量技术中⼀门具有潜⼒的新兴学科。

本⽂将会对⾃混合⼲涉系统在振动测量中的应⽤情况进⾏分析。

⾸先将会对⾃混合⼲涉的发展历程进⾏介绍，然后重点介绍基于⾃混合⼲涉理论的振动测量⽅法，⽂章中将会介绍条纹计数法、正弦相位调制⽅法，并分析它们在振动测量中的优势和不⾜之处。

关键词：半导体激光器；⾃混合⼲涉；光反馈；振动测量；1 引⾔激光⾃混合⼲涉效应指的是在激光测量中，激光器发出的光被外部物体反射或散射[1]，部分光反馈会与激光器腔内光相混合，引起激光器的输出功率、频率发⽣变化，引起输出的功率信号与传统的双光束⼲涉信号类似，所以被称为⾃混合⼲涉（self-mixing interference)[2]。

1963年，King⾸次报道了⾃混合⼲涉现象[3]，发现⼀个可移动的外部反射镜可以引起激光输出功率的变化，⽽且这种波动条纹类似于传统的双光束⼲涉现象。

King的研究奠定了⾃混合⼲涉理论的基础，⽽同时与传统的⼲涉技术相⽐，它克服了光路复杂、不易准直调整等诸多缺点，因其只存在⼀条光路，结构紧凑，易准直等特点，同时还能实现⾼精度的测量，引起研究学者的⼴泛关注，⾃混合技术得以快速发展[4]。

⾃混合⼲涉技术现如今已经被⼴泛应⽤于距离、位移、速度、振动等⽅⾯的测量。

2 激光⾃混合⼲涉技术的发展历程对⾃混合⼲涉现象的初期研究主要是对激光强度波动⽅⾯的研究，由于信号类似于传统的双光束⼲涉信号，因此研究者⼤多借⽤传统⼲涉理论去解释⾃混合⼲涉现象，但是当由弱光反馈⽔平拓宽到适度光反馈⽔平时，观察到的现象已不同于传统的⼲涉信号，这些不同于常理的现象不断吸引研究学者们深⼊研究其机理[5]。

1980年，/doc/2642ab1f05087632301212c3.html ng和K.Kobayashi认为可以将激光器和外反射体作为复合腔激光器，考虑了外腔运动反馈的影响，修正了半导体激光器的速率⽅程，从理论上分析了激光器的稳态特性和动态特性，特别是带外腔的单模激光器可以存在多稳态并出现迟滞现象[6]。

SEMICONDUCTOR LASER

专利名称：SEMICONDUCTOR LASER 发明人：NANZAKI HIRONORI申请号：JP13984587申请日：19870605公开号：JPS63305579A公开日：19881213专利内容由知识产权出版社提供摘要：PURPOSE:To upgrade working efficiency, by using a diffraction grating as a means for constant beam output control of laser power. CONSTITUTION:On one side of a wall part 11b which stands perpendicularly to an upper flat plate part 11a of a stem 11 for sealing a package, a semiconductor laser diode element 103 and a monitoring photodiode element 12 are die- bonded with respective electrodes on one side and they are guided by a lead 1023, and respective electrodes on the other side are guided by leads 1021 and 1022. Further on the upper flat plate part 11a of the stem 11, a reflection type diffraction grating 13 is disposed on the extension of the emission plane of the laser diode element 103, so that the emission beams of the laser diode element are partially diffracted to be monitored. Hence, die-bonding of both the diode elements 103 and 12 is performed in the same direction, and so working efficiency can be upgraded.申请人：TOSHIBA CORP更多信息请下载全文后查看。

单巴半导体激光器

单巴半导体激光器单巴半导体激光器（Single-barrier semiconductor laser）是一种基于半导体材料的激光器。

它具有紧凑、高效、可靠和低成本等优点，被广泛应用于光通信、光存储、光医学和光雷达等领域。

单巴半导体激光器的结构主要包括激活层、波导层、电极和引线等组成部分。

激活层是激光器的核心部分，由半导体材料构成。

波导层用于引导激光的传播，起到光学增益的作用。

电极则用于施加电场，控制激活层的电子和空穴的注入和复合过程。

引线则用于连接激光器和外部电路。

单巴半导体激光器的工作原理是基于半导体材料的能带结构和电子态密度的变化。

当施加正向偏压时，激活层中的电子被注入波导层，与波导层中的空穴发生复合过程，产生光子。

这些光子在波导层内发生多次反射，增加光子数目，并通过反射镜反射出来，形成激光输出。

单巴半导体激光器的工作稳定性和性能优劣主要取决于材料的选择、结构的设计和制备工艺的优化。

常用的半导体材料有GaAs、InP、GaInAs等。

激活层的厚度、波导层的宽度和电极的设计都会对激光器的性能产生影响。

制备工艺包括金属有机化学气相沉积（MOCVD）、分子束外延（MBE）和金属有机化学气相沉积（MOCVD）等。

这些工艺可以控制材料的晶格缺陷、界面电荷和杂质掺杂，进而影响激光器的性能。

单巴半导体激光器在光通信领域具有重要的应用。

它可以作为光纤通信系统中的光源，实现高速、大容量的数据传输。

同时，它还可以用于光存储器件，实现高密度的数据存储和读取。

在光医学领域，单巴半导体激光器可以用于激光手术和激光治疗，具有精确控制和无创操作的优势。

在光雷达领域，单巴半导体激光器可以用于测距、成像和目标识别等应用。

然而，单巴半导体激光器也存在一些问题和挑战。

首先，由于材料的限制，它的工作波长范围有限。

其次，激光器的输出功率和效率有待进一步提高。

此外，激光器的温度敏感性较高，工作温度的变化会导致输出功率和波长的漂移。

因此，研究人员需要通过改进材料、结构和制备工艺等方面的技术来解决这些问题。

1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。

is carried out in the slab, jyj2max; jx0j2max; jy0j2max
L ) NS
k
;
ð1Þ
where ðx; yÞ and ðx0; y0Þ denote the coordinates in
the DOE plane and the Additional DOE plane,
coupling loss due to mode mismatch is accordingly
eliminated.
The DOE is a beam-shaping element [14]. The
DOE modulates the phase distribution when LD
emitting beam passing through it, and then the
Diﬀractive optical element (DOE) has the advantages of small size, light weight, and the potential of realizing manifold or speciﬁc optical functions. DOEs have been introduced into planar lightwave circuits (PLCs) as mode converters to connect LDs and ﬁbers [10–13]. The analytical raytracing approach is employed to ﬁnd the phase structure of DOE in these designs.
* Corresponding author. Tel.: +86-10-6278-1187; fax: +86-106278-4691.
E-mail addresses: lusi_1977@, lus@post.pim. (S. Lu).
cular mode-ﬁeld of SMF always leads to very high coupling loss. The problem becomes more serious in high-power semiconductor LDs with large aspect ratios of the elliptical ﬁelds.
Optics Communications 220 (2003) 345–351
/locate/optcom
Semiconductor laser diode to single-mode ﬁber coupling using diﬀractive optical elements
0030-4018/03/$ - see front matter Ó 2003 Elsevier Science B.V. All rights reserved. doi:10.1016/S0030-4018(03)01456-1
346
S. Lu et al. / Optics Communications 220 (2003) 345–351
2. Principle and design
The illustration diagram of integrated DOEs mode conversion scheme is shown in Fig. 1. A DOE, a Silicon slab, and another DOE (called Additional DOE) are placed to the endface of LD in sequence. They convert the elliptical mode-ﬁeld proﬁle of LD to the circular one of SMF, and the
Fourier transform lens. Therefore, the mode con-
version scheme illustrated in Fig. 1 is equivalent to
the Fraunhofer diﬀraction beam-shaping optical
system shown in Fig. 2. F ¼ L=NS is the focal length. finðx; yÞ is the incident ﬁeld, i.e., the elliptical mode-ﬁeld of LD. The phase of finðx; yÞ is
In this paper, an integrated mode conversion scheme is presented for low-loss coupling between a semiconductor LD and a SMF by using DOEs. Diﬀering from the previously published DOEs, the new scheme can be integrated with semiconductor LD, and a numerical iterative phase retrieval algorithm is employed to design the DOEs. A new far-ﬁeld amplitude constraint is introduced into the iteration to provide very high mode conversion quality. The DOEs mode converter can be designed to achieve good match to SMF for any semiconductor LD with any mode proﬁle. And the tolerances on displacements and tilt angles are investigated.
Si Lu*, Ying-Bai Yan, De-Er Yi, Guo-Fan Jin, Min-Xian Wu
State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instruments, Tsinghua University, Beijing 100084, PR China Received 27 November 2002; received in revised form 19 March 2003; accepted 15 April 2003
PACS: 42.25.F; 42.82.E; 42.81; 42.25.P
Keywords: Diﬀractive optical element; Optical coupling; Optical ﬁber; Laser diode
1. Introduction
Single-mode ﬁber (SMF) transmission is widely used in optical communication. Eﬃcient coupling of semiconductor laser diode (LD) to SMF is of critical importance. However, the mismatch between the elliptical mode-ﬁeld of LD and the cir-
respectively, NS is the refractive index of the Sili-
con slab, and k is the pump wavelength of LD. The
DOE plane and the Additional DOE plane are
equivalent to the front and back focal plane of a
Abstract
An integrated mode converter consisting of two diﬀractive optical elements (DOEs) and a Silicon slab is presented for low-loss coupling between a semiconductor laser diode (LD) and a single-mode ﬁber (SMF). The phase structures of the DOEs are designed using iterative phase retrieval algorithm. We introduce a new far-ﬁeld amplitude constraint into the iteration to provide very high mode conversion quality. Compared with previously published mode converters, the scheme is more universal because itÕs applicable for any semiconductor LD. In simulation, coupling losses lower than 0.02 dB are predicted for all the discussed LDs with aspect ratios of the elliptical ﬁelds from 1 to 9. The requirements on axial displacement and rotation angle have been removed. The tolerance for 1-dB loss increment for lateral misalignment is 0.9 lm. And the coupling loss is insensitive to tilt angle. Ó 2003 Elsevier Science B.V. All rights reserved.