Synthesis, Crystal Structure, and Magnetic Property of One 3D Nickel Coordination Polymer

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InSeI单晶的制备及其结构与性能研究

InSeI单晶的制备及其结构与性能研究

第49卷第12期人工晶体学报Vol.49No.12 2020年12月JOURNAL OF SYNTHETIC CRYSTALS December,2020 InSei单晶的制备及其结构与性能研究周玄1,2,程国峰2,何代华1(1.上海理工大学材料科学与工程学院,上海200093;2.中国科学院上海硅酸盐研究所,上海200050)摘要:利用化学气相传输法(CVT)制备了InSeI单晶。

该晶体为黄色的针状物,晶体较脆。

在室温下进行X射线衍射分析发现,其属于四方晶系,晶胞参数为a=b=1.8643(5)nm,c=1.0120(3)nm,V=3.5172nm3,空间群为他/a。

紫外可见光吸收光谱、光致发光光谱等结果显示该晶体的禁带宽度是2.48eV,在一定波段光的激发下,InSeI单晶在600nm左右有较宽的发射峰,表明该晶体的发光方式为缺陷态发光。

介电温谱表明InSeI单晶在440K时其四方相的结构发生了相变。

关键词:InSeI;金属基硫卤化合物;化学气相传输法;光致发光;禁带宽度;介电性能中图分类号:O78文献标识码:A文章编号:1000-985X(2020)12-225244 Synthesis,Structure and Properties of InSei Single CrystalsZHOU Xuan1,2,CHENG Guofeng2,HE Daihua1(1.School of Materials Science and Engineering,Lniversity of Shanghai for Science and Technology,Shanghai200093,China;2.Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai200050,China)Abstract:InSeI single crystals were synthesized by the chemical vapor transport(CVT)method.The crystal is yellow needle­shaped and brittle.X-ray diffraction results at room temperature show the tetragonal system of InSeI,with lattice parameters of a=b=1.8643(5)nm,c=1.0120(3)nm,V=3.5172nm3,and space group is/a.The ultraviolet-visible absorption spectrum,photoluminescence spectrum results show that InSeI has a2.48eV band gap,under the excitation of a certain band of light,InSeI single crystal has a wide emission peak at about600nm,which indicates that the luminescence mode of the crystal is defect state luminescence.The dielectric temperature spectrum indicates that a phase transition happened in the tetragonal structure of InSeI crystals at440K.Key words:InSeI;metal based thiohalide;chemical vapor transport method;photoluminescence;band gap;dielectric property0引言近年来,金属基硫卤化合物MQX[1](M=Ga,In,Sb,Bi;Q=S,Se,Te;X=Cl,Br,I)由于其独特的光电性质如铁电性[2-3]、热电性[4]、光电导性[5]和非线性光学性能[6]等引起了科学界的浓厚兴趣。

凝聚态物理课程大纲

凝聚态物理课程大纲

凝聚态物理》课程大纲Condensed Matter Physics ” Course Outline、课程简介(course description)教学目标(goal) :Basic understandings of solids, energy bands, semiconductors, superconductivity and magnetism, and their main uses.主要内容(course contents):Condensed matter physics covers an extremely broad range of topics. Unfortunately therefore it is one of the most difficult course to teach and a one of the most boring course to learn. On the other hand, research in this area of physics has (arguably) resulted in the most useful outcomes. The topics to be covered in this course are crystal lattice structure, Bragg reflection and reciprocal lattice, phonons, free electron Fermi gas, energy band and band structure, semiconductors andsemiconductor devices, Fermi surface and metals, superconductivities/magnetism,plasmon/plariton/polaron, optical properties and excitons, surfaces, interfaces, and nanostructures.We will try to make it fun by injecting more applied topics of relevance to our everyday lives such as semiconductor devices and applications.、教学内容(teaching contents)第一章Chapter 1***主要内容Main subject :Crystal lattice structure重点与难点important and difficult points :Read Chapter 1 of the book. The materials are -10 mostly definitions to be familiar with. Must remember 1 ? (angstrom) = 10 m (meter) =0.1 nm (nanometer). The cases of simple, body-centered, and face-centered cubic lattice structuresshould be remembered.第二章Chapter 2***主要内容Main subject :Crystal diffraction and reciprocal lattice重点与难点important and difficult points :Review Fourier transform, light diffraction.Reciprocal lattice is essential in understanding X-ray Bragg reflections and therefore experimental determination of crystal structures.第三章Chapter 3***主要内容Main subject :Crystal binding重点与难点important and difficult points:difference and different binding strengths of various forces, van der Waals force is treated in more mathematical terms.第四章Chapter 4*** 主要内容Main subject :Phonons: lattice vibration 重点与难点important and difficult points :phonons are “ qua-psai rticles ” of lattice vibration第五章Chapter 5***主要内容Main subject :Phonons: thermal properties重点与难点important and difficult points :Debye temperature, Debye and Einstein models, anharmonic effects, phonon-phonon scattering, thermal expansion, thermal conductivity/resistivity, Umklapp process第六章Chapter 6*** 主要内容Main subject :Free electron Fermi gas 重点与难点important and difficult points :Electron motion is treated as though they are freely moving, Fermi-Dirac distribution, Fermi energy vs. chemical potential, Drude formula.第七章Chapter 7***主要内容Main subject :Energy band and band structure重点与难点important and difficult points:How does the periodic potential give rise to energy band?第八章Chapter 8***主要内容Main subject :Semiconductors and semiconductor devices重点与难点important and difficult points :Applications of band theory, band gap, and band structure, effective mass, hole.第九章Chapter 9***主要内容Main subject :Fermi surface and metal重点与难点important and difficult points :Everything happens at the Fermi surface, almost第十章Chapter 10***主要内容Main subject :Superconductivities and magnetism重点与难点important and difficult points: Basic concepts of superconductivity and magnetism, their physical mechanism.第十一章Chapter 11***主要内容Main subject :Plasmon/polariton/polaron, optical properties and excitons 重点与难点important and difficult points :Various quasi-particles involving coupling among electrons, phonons, and photons.第十二章Chapter 12***主要内容Main subject :Surfaces, interfaces, and nanostructures重点与难点important and difficult points :Surfaces, interfaces and associated nanostructures form much of current research topics and promising applications.Lectures on Superconductivities and Magnetism will be given by Prof. Hang Zheng.Some lectures on En ergy Bands an d/or Semic on ductors will likely be give n by Prof. Harald Schn eider of Helmholtz Zen trum Dresde n-Rosse ndo戊Germa ny, who is also a visiti ng chair professor with the SJTU.、教学进度安排(detailed cale ndar)Class locations & times: Tuesday & Thursday 10:00-11:40 东中院1-104(16 weeks total lecture time, weeks 17 & 18 —readi ng/final exam week)Office hours: Every Tuesday after class 2:00pm-6:00pm . On those no-class days, there will be no office hour. The office hour will be at my office (Physics Building, Room 902).During the period of Prof. Zheng ' s lectures, the office hour will be held101RQom四、课程考核及说明(Exams and grades)40%为平时成绩(大作业等) Homework assig nments60% 为考试成绩Exams (mid-term 20% & final 40%)五、教材与参考书(books and references)* Lecture no tes, to provide softcopy* Charles Kittle, "In troduction to Solid State Physics" (John Wiley & Son s, I nc. New York), 8th editi on. Stude nts are en couraged to get both the tran slatio n version and the En glish versio n.。

材料科学基础_概念中英文

材料科学基础_概念中英文

材料科学基础重要概念(中英文)晶体学基础晶体学(crystallography)布喇菲点阵(Bravais lattice)晶体生成学(crystallogeny)体心化(body centering)晶体结构学(crytallogy)底心化(base centering)晶体化学(crystallochemistry)特殊心化(special centering)晶体结构(crystal structure)晶面(crystal plane)点阵平移矢量(lattice translation vector)晶(平)面指数(crystal – plane indice)初级单胞(primitive cell)晶带(zone)点阵常数(lattice parameter)倒易空间(reciprocal space)对称变换(symmetry translation)参考球(reference sphere)主动操作(active operation)经线(longitude)国际符号(international notation)赤道平面(equator plane)点对称操作(point symmetry operation)极网(pole net)旋转操作(rotation operation)结构基元(motif)二次旋转轴(two - fold axe, diad)晶体几何学(geometrical crystallography)四次旋转轴(four – fold axe, tetrad)晶体物理学(crystallographysics)镜像(mirror image)等同点(equivalent point)对形关系(enantiomorphic relation)点阵(lattice)反演(inversion)初基矢量(primitive translation vector)晶系(crystal system)复式初基单胞(multiple – primitive cell)单斜晶系(monoclinic system)对称元素(symmetry element)四方晶系(正方晶系)(tetragonal system)对称群(symmetry group)六方晶系(hexagonal system)被动操作(passive operation)熊夫利斯符号(Schoenflies notation)点阵有心化(centering of lattice)恒等操作(单位操作)(identity)面心化(face centering)旋转轴(rotation axe)单面心化(one – face centering)三次旋转轴(three – fold axe, triad)晶向(crystal direction)六次旋转轴(six – fold axe, hexad)晶向(方向)指数(crystal – direction indice)镜面(mirror plane)晶面族(form of crystal - plane)同宇(congruent)倒易点阵(reciprocal lattice)旋转反演(rotation - inversion)极射赤面投影(stereographic projection)三斜晶系(triclinic system)参考网络(reference grid)正交晶系(斜方晶系)(orthogonal system)纬线(latitude)立方晶系(cubic system)吴氏网(Wulff net)菱方晶系(rhombohedral system)标准投影网(standard projection)晶体结构晶体结构(crystal structure)鲍林规则(Pauling’s rule)结构符号(structure symbol)氧化物结构(oxide structure)致密度(空间填充效率)(efficiency of space 岩盐结构(rock structure)filling)纤维锌矿结构(wurtzite structure)配位数(coordination number)闪锌矿结构(zinc blende structure)配位多面体(coordination polyhedra)尖晶石结构(spinel structure)拓扑密堆相(topologically close – packed α-Al2O3型结构(corundum structure)phase)金红石结构(rutile structure)金属晶体(metal crystal)萤石结构(fluorite structure)离子晶体(ionic crystal)钙钛矿结构(perovskite structure)共价晶体(covalent crystal)钛铁矿结构(ilmenite structure)分子晶体(molecular crystal)氯化铯结构(cesium chloride structure)原子半径和离子半径(atomic radius and ionic 硅酸盐(silicate)radius)链状硅酸盐(chain silicate)原子结构体积(volume of structure per atom)层状硅酸盐(phyllo silicate)体密度(volumetric density,ρV)岛状硅酸盐(island silicate)面密度(planar density, ρP)骨架结构(framework structure)线密度(linear density, ρL)镁橄榄石结构(forsterite structure)金刚石结构(diamond structure)辉石(picrite)纳米碳管(carbon nano tube)粘土矿(clay mineral)置换固溶体(substitutional solid solution)高岭石(kaolinite)填隙固溶体(interstitial solid solution)云母(mica)尺寸因素(size factor)石英(quartz)价电子浓度(valance electron concentration)鳞石英(tridymite)电子化合物(electron compound)方石英(cristobalite)间隙化合物(interstitial compound)钙长石(anorthite)尺寸因素化合物(size–factor compound)分子筛(molecule sift)Laves相(Laves phase) 同素异构性(allotropy)σ相(σphase)多形性(polymorphism)有序固溶体(超结构)[ordered solid solution 准晶(quasicrystal)(super lattice) ] 彭罗斯拼砌(Penrose tiling)长程有序参数(long-range order parameter)短程有序参数(shot-range order parameter)晶体缺陷不完整性(imperfection)向错(disclination)点缺陷(point imperfection)沃特拉过程(V olterra’s process)空位(vacancy)刃型位错(edge dislocation)自间隙原子(self-interstitial)螺型位错(screw dislocation)构型熵(configuration entropy)混合型位错(mixed dislocation)肖脱基缺陷(Schottky defect)柏氏回路(Burgers circuit)弗兰克缺陷(Frenkel defect)柏氏矢量(Burgers vector)内禀点缺陷(intrinsic point defect)位错环(dislocation loop)非禀点缺陷(extrinsic point defect)位错密度(dislocation density)线缺陷(line imperfection)位错的弹性能(elastic energy of dislocation)位错(dislocation)位错线张力(tension of dislocation)位错宽度(width of dislocation)层错矢量(fault vector)保守运动(conservative motion)外延层错(extrinsic fault)非保守运动(nonconservative motion)层错能(stacking fault energy)滑移(slip)肖克莱部分为错(Shockley partial dislocation)滑动(glissile)铃木气团(Suzuki atmosphere)攀移(climb)弗兰克位错(Frank partial dislocation)自力(self-force)扩展位错(extended dislocation)渗透力(osmotic force)压杆位错(stair-rod partial dislocation)映像力(image force)Lomer-Cottrell 位错(Lomer-Cottrell弯结(kink)dislocation)割阶(jog)L-C阻塞(L-C Lock)柯垂尔气体(Cottrell atmosphere)赫斯阻塞(Hirth lock)史诺克气体(Snoek atmosphere)分位错(fractional dislocation)弗兰克-瑞德位错源(Frank-Read source)超点阵(superlattice)B-H位错源(Bardeen-Herring source)反相畴(Antiphase domain)位错塞积群(dislocation pile-up group)反相畴界(Antiphase boundary, APB)全位错(perfect dislocation)超位错(super-dislocation)堆垛层错(stacking fault)弗兰克-纳巴罗回路(Frank-Nabarro circuit)部分为错或不全位错(partial dislocation)向错强度(disclination strength)内禀层错(intrinsic fault)条纹织构(schlieren texture)表面能(surface energy) 适配(matching)晶界(grain boundary) 共格晶界(coherent boundary)小角度晶界(low angle grain boundary)非共格晶界(incoherent boundary)大角度晶界(high angle grain boundary 晶界迁移率(grain boundary mobility)倾转晶界(tilt boundary)取向关系(orientation relationship)扭转晶界(twist boundary)气泡(gas babble)相界(phase boundary) 空洞(void)扩散不可逆过程(irreversible process)传质过程(mass transport)扩散(diffusion)扩散距离(diffusion distance)唯象系数(phenomenological coefficient)间隙机制(interstitial mechanism)挤列结构(crowdion configuration)哑铃结构(dumbbell split configuration)空位机制(vacancy mechanism)换位机制(exchange mechanism)扩散流量(flux)参考系(reference frame)实验参考系(laboratory reference frame)点阵参考系(lattice reference frame)菲克第一定律(Fick’s first law)菲克第二定律(Fick’s second law)扩散系数(diffusion coefficient)禀性扩散系数(intrinsic diffusion coefficient)互扩散系数(mutual diffusion coefficient)自扩散系数(self-diffusion coefficient)稳态扩散(steady state diffusion)Kirkendall 效应(Kirkendall effect)Matano 平面(Matano interface)热力学因子(thermodynamic factor)同位素(isotope)示踪物(tracer)扩散偶(diffusion couple)误差函数(error function)哑变量(dummy)数值方法(numerical method)有限差分(finite-difference)收敛性(convergence)截断误差(truncation error)舍入误差(round-off error)相关系数(correlation factor)高扩散率通道(high-diffusivity path)体扩散(volume diffusion)晶界扩散(grain boundary diffusion)位错扩散(dislocation diffusion)表面扩散(surface diffusion)迁移率(mobility)渗透率(permeability)凝固分配系数(partition coefficient)枝晶偏析(dendrite segregation)区域提纯(zone-refining)亚共晶合金(hypoeutectic alloy)胞晶的形成(cell formation)过共晶合金(hypereutectic alloy)胞状树枝晶(cellular dendrite)片状(lamellar)柱状树枝晶(columnar dendrite)棒状(rod-like)共晶凝固(eutectic solidification)共晶领域(eutectic colony)包晶凝固(peritectic solidification)伪共晶(pseudo-eutectic)偏析(segregation)离异共晶(divorced eutectic)熔焊(fusion welding)激冷区(chill zone)快速凝固(rapid solidification process)柱状晶区(columnar zone)连续铸造(continuous casting)等轴晶区(equiaxed zone)树枝状显微偏析(dendritic microsegregation)收缩晶区(shrinkage cavity)非平衡杠杆定律(non-equilibrium lever rule)疏松(porosity)组分过冷(constitutional supercooling)非金属夹杂物(non-metallic inclusion)胞状组织(cellular structure)熔池(weld pool)二次枝晶(secondary dendrite)混合区(composite region)一次支晶(primary dendrite)热影响区(heat-affected zone)。

The crystal structure of the β″ phase in Al–Mg–Si alloys

The crystal structure of the β″ phase in Al–Mg–Si alloys

THE CRYSTAL STRUCTURE OF THE b0PHASE INAl±Mg±Si ALLOYSS.J.ANDERSEN1,2,H.W.ZANDBERGEN2,J.JANSEN2,3,C.TRáHOLT2,U.TUNDAL4and O.REISO41SINTEF Materials Technology,Applied Physics,7034Trondheim,Norway,2National Centre for HREM,Laboratory of Materials Science,Delft University of Technology,Rotterdamseweg137,2628 AL Delft,The Netherlands,3Laboratory for Crystallography,University of Amsterdam,Nieuwe Achtergracht166,1018WV Amsterdam,The Netherlands and4HYDRO Aluminium,Metallurgical Rand D Centre,Sunndalsùra,Norway(Received17November1997)AbstractÐThe crystal structure of b0,one of the strengthening phases in the commercially important Al±Mg±Si alloys,is determined by use of high resolution electron microscopy(HREM)and electron di raction(ED).A trial structure was established from exit wave phase reconstructed HREM images.A least-square re®nement of the model coordinates was done using data from digitally recorded ED patterns.A recently developed computer program(MSLS)was applied,taking into account dynamic scattering.The atomic unit cell contains two units of Mg5Si6.It is C-centred monoclinic,space group C2/m, a=1.51620.002nm,b=0.405nm,c=0.67420.002nm,b=105.320.58.The atomic packing may be regarded as a hard ball packing using clusters,the clusters being(1)centred tetragons of Mg atoms and(2) so-called twin icosacaps where Mg atoms are centred above and below pentagonal rings of four Si atoms an one Mg atom.A growth related stacking fault in the structure is explained by a de®ciency of Mg atoms.A model for the b0/Al interface is given.#1998Acta Metallurgica Inc.1.INTRODUCTION1.1.GeneralThe discovery of the precipitation hardening mech-anism in the beginning of this century in an Al±Cu alloy has had great implications for all technologies requiring light alloys with some strength,and es-pecially for the aerospace and construction technol-ogies.The increase in hardness that the commercial Al alloys achieve upon hardening is usually a factor of2or more.In the Al±Mg±Si(6xxx)alloys such a tremendous increase in strength is caused by pre-cipitates formed from solution,of merely1wt%of Mg and Si that is added to the aluminium.The maximum hardness is achieved when the alloy con-tains a combination of very®ne fully coherent so-called Guinier Preston(GP-I)zones with diameters about2.5nm,and the semicoherent,larger needles, b0(GP-II zones)with a typical size4Â4Â50nm3. The density of these phases is very high.For the b0 needles,a number density in the matrix of about 104/m m3is normal.This is equal to a volume of nearly1%in the material.The6xxx series alloys are not among the strongest aluminium alloys,but they represent a high share of the aluminium pro-ducts in the world(H20%).In1989,about90%of the tonnage extruded in western Europe,was Al±Mg±Si alloys[1].1.2.The precipitation/transformation sequenceThe phases occurring in the Al±Mg±Si alloys have been studied for more than50years due to the commercial importance of these materials.In1948 Geisler and Hill[2]and Gunier and Lambot[3] reported that X-ray Laue pattern zones indicated the formation of small(H2Â2Â10nm3)needles or Guinier Preston(GP)zones,when the temperature was raised to2008C.Further heating caused the zones to thicken into rods,called b',and®nally a large plate-shaped equilibrium phase,b,was seen to form.The latter was known to be of the f.c.c.CaF2 type with a composition Mg2Si.The alloys that were studied were close to the Al±Mg2Si section of the Al±Mg±Si phase diagram;therefore it was assumed that the composition of all the Mg±Si con-taining phases was ter experiments have shown that the precipitation and transformation is quite complicated and that except for the equili-brium phase,b,the phases involved do not have the stoichiometric ratio Mg2Si.In Table1the transformation sequence at low ageing temperatures for alloys near the quasi-binary section Al±Mg2Si of the phase diagram is summar-ised.The range of existence and sizes of the b'rods and b plates depend not only on the heat-treatment, but on several other factors as well,such as cooling rate from homogenisation or extrusion and the number of Al±Fe(+Mn)±Si containing phases (dispersoids)in the material.This will not be dis-cussed in this paper.In the following a discussion of the precipitation/ transformation sequence shown in Table1is given.Acta mater.Vol.46,No.9,pp.3283±3298,1998#1998Acta Metallurgica Inc.Published by Elsevier Science Ltd.All rights reservedPrinted in Great Britain1359-6454/98$19.00+0.00 PII:S1359-6454(97)00493-X32831.2.1.Atomic clusters.After rapid cooling from homogenisation or extrusion the material is super-saturated with Mg and Si.Due to the higher solubi-lity of Mg in Al,when stored at room temperature or heated,Si ®rst goes out of solution and forms small clusters,but there are also some indications of clustering of Mg [5].The nucleation of Si-clusters will occur at quenched-in vacancies at temperatures as low as À508,below which the vacancy movement becomes very low [6].Storing or heating above À508will cause Mg to di use to the clusters,and Mg±Si phases will pre-cipitate.The di usion of Mg to the Si clusters has been veri®ed through APFIM [5,7]where the ratio of Mg/Si in the average cluster was found to increase with time when heated at 708.Since the number of Si clusters formed will be important for the precipitation of the strengthening GP zones,the storing time at a low temperature before arti®cial ageing is important concerning the material proper-ties.1.2.2.GP zones and the b 0phase .The ®rst phase to precipitate on the small clusters is the GP zones.Based on a TEM study of Al±Mg 2Si [8]Thomas proposed a model for these particles;Mg and Si replace Al in such a ratio that the occupied volume is about the same.He proposed a simple substi-tution along 110-directions with strings of atoms in the sequence Mg±Si±Mg±Mg±Si±Mg.Here two di-ameters of Mg (2Â0.32nm)and one of Si (0.235nm)amounts to 0.874nm,as compared with three diameters of Al (0.859nm).In more recent research the evolution of GP zones in several Al±Mg 2Si alloys was studied by calorimetry [6],in 6061by calorimetry and TEM [5],and by atom-probe ®eld-ion microscopy (APFIM)and TEM/HREM [5,7].These works support the view that there are at least two phases in the size range of the GP-zones,called GP-I and GP-II.For the GP-I type the size is in the range 1±3nm.The crystal structure is unknown.The zones are fully coherent and probably have a spherical shape.Dutta and Allen [9]observed by TEM small spot-like features of ``unresolved''shape of about 2.5nm that should be the GP-I zones.Particles investigated by APFIM [5]with comparable dimensions to these zones seem to have Mg/Si ratios usually less than 1.This composition is therefore di erent from that of the model proposed by Thomas [8].The GP-II zone is the same phase as the currently investigated b 0phase.This phase has the shape of ®ne needles,typically about 4Â4Â50nm 3when the material is in the aged-hardened condition [7,10].In this condition the number density of the nee-dles is high;typically 104/m m 3[10].The b 0phase is fully coherent only along the b -axis.Edwards et al.[7]managed to determine the unit cell of the b 0phase by electron di raction.It was found to be a monoclinic C-centred structure with a =0.153420.012nm,b =0.405nm,c =0.68320.015nm,b =10621.58.The b -axis is along the needle-axis.It is the full coherency of GP-I zones,the semi-coherency of the GP-II zones together with their high number densities that introduce in the alu-minium matrix strain and resistance against move-ment of dislocations,that gives the material its mechanical strength.1.2.3.The b 'phase .The next phase in the trans-formation sequence after the GP-I zones and the b 0phase is the b 'phase.This has a lower Mg/Si ratio than the equilibrium b phase.Lynch et al.found by X-ray microanalysis evidence for a ratio of Mg/Si in the b 'rods in an overaged material to be about 1.73[11],while Matsuma et al.[12]later determined the ratio to be about 1.68.For materials with excess silicon relative to Al±Mg 2Si there may be very small precipitates also of the b 'and a so-called B 'phase that is richer in silicon,or even Si particles [4].Because of this such particles with sizes comparable to b 0[7,4]may be mistaken for the b 0phase.The b 'and the B 'phase are reported as having the hexa-gonal unit cells a =0.705nm,c =0.405nm and a =0.104nm,c =0.405nm,respectively.In Refs [7,4]the relative number of b 0as compared with the smallest b '(and B ')particles was not deter-mined.It was recently suggested that b 'is a h.c.p.structure with a =0.405nm,c =0.67nm [12,13].1.2.4.The b phase.The b phase is the equilibrium phase in this system.It is the only phase up to now with a known structure.It is a CaF 2type f.c.c.structure with a =0.639nm having formula Mg 2Si.The structure may be described as strings of three atoms,Mg±Si±Mg,on the corners and faces of a cube,directed along the diagonals.Table 1.The evolution of Mg±Si phases near the quasi-binary section Al±Mg 2Si (top to bottom)Transformation/precipitation sequence Crystal type Size (nm)Composition Clusters of Si and fewer of Mg unknown unknown Si (Mg)Clusters containing Si and Mg unknown unknown Mg/Si <1Coherent spherical GP-I zonesunknown H 1±3Mg/Si H 1Semi-coherent GP-II zones (b 0needles)monoclinic H 4Â4Â50Mg/Si r 1b 'rods (and B 'rods)hexagonal H 20Â20Â500Mg/Si H 1.7b -Mg 2Si platescubicmicronsMg/Si =2The B 'phase is observed with alloys having excess Si relative to Al±Mg 2Si.It contains more Si than b '[4].ANDERSEN et al.:Al±Mg±Si ALLOY32841.3.SummationSumming up the information above,it appears that the phases that evolve from the very®ne Si-clusters into coarser particles take up progressively more magnesium during the coarsening and trans-formation processes,until an equilibrium compo-sition Mg2Si for the b phase®nally is reached.In this paper we report the structure determi-nation of the b0phase,which must be one of the important hardening phases in the commercial6xxx alloys.The technique used in the structure determi-nation is the through focus exit wave reconstruction technique in high resolution electron microscopy,in combination with quantitative electron di raction.2.EXPERIMENTAL2.1.Material and sample preparationThe as-received material was in the shape of extruded sections.It was supplied by HYDRO Aluminium AS(Sunndalsùra).The composition of the material was Al±0.2Fe±0.5Mg±0.53Si±0.01Mn (wt%).The material is from the same batch and extruded sections as investigated in Refs[10,14], there labelled as A and C,respectively.Specimen preparation and location in the extruded section of the samples for TEM are described in Refs[10,14]. Prior to the arti®cial ageing(5h at1858)the ma-terial had undergone a rather standard processing for an extrusion product.After the jet-polishing, specimens were stored in methanol.Most of the TEM experiments were performed within a day after specimen preparation.2.2.TEM equipment and experimental dataAll TEM work was performed using a PHILIPS CM30-ST/FEG electron microscope operated at 300kV.The microscope is equipped with a Photometrix1024Â1024slow scan CCD camera (12bits dynamical range),enabling a linear record-ing of HREM and ED puter control of the CCD camera and the microscope is handled with a Tietz software package.In this way series of 15±20HREM images with focus increments of typi-cally 5.2nm were recorded for each exit wave reconstruction.For the high resolution work suitable aluminium grains were selected and tilted into a h100i zone axis.HREM images were recorded at room tem-perature on as thin areas as possible,typically4±10nm.Needles were selected that could be viewed along their[010]zone axis.In this situation,the needles usually extend through the whole thickness of the specimen,such that no image blurring occurs due to overlap with the matrix.For a single image, the exposure time was usually about1s.For the di raction experiments a small spot-size (5±10nm)was used with exposure times of1±5s. Two zone-axes of the needles were chosen;[010]and[001].For the latter,the aluminium grain was tilted to a h310i zone axis,where statistically one out of six needles is in the correct orientation. Many of the needles contain stacking-faults or sec-ond phases.For a reliable structure determination it is important that the area where a di raction pat-tern is taken is free of defects.Given the resolution of the microscope it should be relatively easy to select single crystalline b0particles.However,to prevent the rapid contamination of the illuminated area that is typical for this kind of specimen at room temperature,the specimen was cooled to about100K.The sample cooling holder has a much poorer mechanical stability resulting in such a loss of resolution that selection of single crystal b0particles was di cult.Because of this ED pat-terns were taken from each particle encountered. Therefore quite many di raction patterns had to be discarded because of streaking and twinning prob-ably caused by the stacking-faults or sometimes extra spots caused by a intergrown phase that was determined to be b'.Five[010]di raction patterns were selected.For the[001]zone axis there is a greater chance of``cross-talk''due to more overlap of the matrix with the crystal,and suitable di rac-tion patterns for the re®nement were more di cult to®nd.Here®ve of the16recorded patterns were from the correct projection or particle.Only two of these patterns could later be re®ned.In addition to the problem with overlap spots from the b'phase, the reason was also the strong interference with the aluminium matrix in this projection that made sub-traction of the background di cult.The thickness of the investigated areas were somewhat larger for the di raction experiments than for the HREM ex-periments.The subsequent re®nements showed that the thickness usually exceeded10nm.In Fig.6, parts of two of the digitally recorded di raction images are shown.This®gure also shows some streaking caused by oversaturation of the CCD camera,which was not equipped with over¯ow pro-tection.The streaks and the aluminium di raction re¯ections were excluded from the images prior to data reduction.The exit wave reconstruction of the HREM focus series were done with a software package based on algorithms developed by Van Dyck and Coene[15±17].Given the coherency of the presently available ®eld emission guns the structural information in ordinary HREM images goes well beyond the point-to-point resolution in the electron microscope. The reconstruction method takes advantage of the knowledge about the transfer function,e.g.how the microscope optics distorts the electron wave after leaving the crystal(the exit wave)on its way to the image plane.This distortion is also a function of defocus.A series of HREM images are recorded at intervals of known defocus.The amplitude and phase information that is mixed up in the HREM images is retrieved through digital processing,andANDERSEN et al.:Al±Mg±Si ALLOY3285corrections for focus and spherical aberration are done.Furthermore,since typically15±20images are used in the reconstruction a considerable reduction in noise is attained.The exit wave is thus independent of various aberrations of the electron microscope, but it is still dependent on the specimen thickness. Only for very small specimen thicknesses is the exit wave very similar to the projected potential,viz.the projected atomic structure.For thicker sections,e.g. more than about10nm for the presently presented exit wave image,the local contrast in the exit wave can be quite di erent from the local scattering poten-tial.Thus,for such thicknesses a higher brightness at a certain point in the phase image of the exit wave as compared to other points,does not have to imply the presence of a locally more strongly scattering atom at this point.The good news is that the positions of the bright dots should correlate well with the location of the atoms.In the presently used electron microscope the res-olution is enhanced from0.20nm to about0.14nm. The HREM images presented in this work are recombined exit wave phase images.See Coene et al.[17],Zandbergen et al.[18]and Op de Beeck et al.[19]for examples and discussion of the method. The re®nement of the structure was done using the computer programme package MSLS[20].The CCD images with the di raction patterns were cor-rected for the¯at®eld(variation in the pixel sensi-tivity)and over¯ow during read-out of the CCD camera.Spurious X-ray signals and the Al di rac-tion spots were omitted.Automatic indexing and data reduction on the patterns were done.The obtained two-dimensional indices of the images were next transformed into the correct hkl indices so that the di raction data sets could be combined. MSLS was used for re®nement of the trial structure coordinates as obtained from the reconstructed exit wave.This program re®nes coordinates based on the least-squares procedure using the multi-slice al-gorithm to account for the dynamic di raction.The parameters re®ned were the thickness,the scaling factor,the centre of the Laue circle for each of the data sets,and the atomic coordinates and tempera-ture factors.The R-value used as measure of the correctness of the structure is de®ned as R=a(I calcÀI obs)2/a(I obs)2.Only the signi®cant re¯ections(I obs>2s(I obs))were used.R-values between2and6%are being quoted for the most reliably determined structures.3.RESULTS/DISCUSSION3.1.Conventional HREM/TEMConventional TEM shows the interior of the Al grains to mainly contain particles having a®ne nee-dle shape.The needles lay along h100i Al directions. Figure1gives an example.It is a bright®eld image in an Al h100i zone axis where the needles clearly point in two normal directions.The dark spots are needles pointing in the viewing direction.The exper-imental di raction patterns as well as HREM images show that the needle shaped particles mostly are of one kind,the monoclinic phase that is usually referred to as the b0phase.Figure2shows a HREM image with one such needle.Such images show the precipitates to be coherent along the nee-dle direction(their b-axis)with a h100i Al direction. This con®rms that their cell parameter is the same as aluminium,b=0.405nm.Many of the b0precipitates were found to con-tain stacking faults.In some precipitates an inter-growth of b0with another phase was observed.It is most probably the b'phase which has the hexago-nal axis along the needle direction.Sometimes this phase was found to exist alone.The cell parameter a=0.705nm has been con®rmed from exit wave simulated images.These images will be published later.In the same material coarser rods of the b' phase have earlier been investigated;It was reported that they nucleate on®ne Al±Fe±Si particles[14].It may be expected that much of the b'particles nucle-ate on b0since with longer arti®cial ageing times the micro-structure will contain an increasing amount of rods of b'.By selected area electron dif-fraction the coarse b'phase in this material was determined to have a hexagonal structure with a H0.71nm,c H0.41nm.The a-axis therefore®ts well with the phase intergrown with b0.The struc-ture of the small and large b'is therefore probably the same.We did not observe any B'phase in the material.3.2.Elemental analysis of the b0phaseWe performed several X-ray analyses of the small precipitates with the spot along the needle axis. Due to the very thin specimen areas(10±40nm)the spectra obtained should in principle not be signi®-cantly in¯uenced by absorption in the specimen, which is the most important reason for deviations from the actual concentration.In spite of the small size of the spot(1±2nm),there was always an Al peak present in the spectrum,of varying height. This is partly caused by stray electrons travelling down the column of the electron microscope which are not focused with the rest of the electrons in the beam probe and therefore many hit aluminium. Secondly,because during analysis the beam is par-allel to the needle axis,i.e.to the[010]zone axis of b0,this implies an e ective beam broadening by the elastic scattering of some electrons into aluminium. For some of the recordings there is also an e ect of specimen drift during recording.Another e ect is the contamination layer and the(aluminium)oxide layer on the surface of the particle which primarily contains Al.The EDS experiments could therefore not rule out that some Al is contained in the precipitate.As a standard for determining the K-ratios a mineral forsterite was used whose mainANDERSEN et al.:Al±Mg±Si ALLOY 3286components are MgO and SiO 2with a composition so that the Mg/Si atomic ratio is 2.Not taking into account the possible systematic deviations,the EDS experiments indicated that the atomic ratio for Mg/Si was close to or even below 1.The accuracy of these measurements were on the order of 10%.However,they ruled out the earlier accepted ratio of 2for the b 0phase.EDS measurements were also performed on larger particles of the b 'and b -Mg 2Si phases which had been extracted from the alu-minium matrix.These phases gave compositions near the expected,as listed in Table 1.The accuracy here was much better for thin sections since the alu-minium matrix could be avoided entirely.3.3.Exit wave reconstruction3.3.1.The unit cell.Coherency of the b 0phase with the matrix .In Fig.3a reconstructed exit wave (phase)of a b 0particle in the [010]orientation embedded in aluminium is shown.The b 0[010]direction is parallel to a h 100i type aluminium zone axis and is along the needle.Atomic columns in the viewing direction in the image appear as bright dots.The columns in the Al matrix are clearly resolved;in this projection the separation between nearest neighbor columns are 0.2025nm,or half the Al unit cell length.Due to the face centering of alu-minium the nearest neighbor atom columns are also shifted 0.2025nm in the viewing direction relative to each other.In the ®gure circles are drawn that indicate the two di erent height positions of the atoms in the viewing direction.The lattice image of the Al matrix changes over the image due to local variations in tilt.The b 0unit cell is outlined in the particle.Due to the C-centering,the a -axis is twice the apparent periodicity.By calibrating the magni®cation of the image using the aluminium lattice,the unit cell was established to be a =1.51620.002nm,c =0.67420.002nm and b H 105±1068.HREM of other nee-dles lying in the normal direction (Fig.2)have shown that there is a full coherence between the crystal along the b -axis with the same periodicity as the aluminium matrix;therefore b =0.405nm.In the re®nement of di raction images for this zone axis,the monoclinic angle is calculated.It was found to have a mean value b =105.320.58when averaged over 7di raction patterns.The b 0unit cell is closely related to the alu-minium lattice.From di raction patterns (Fig.5)asFig.1.A typical low magni®cation micrograph of b 0needles in a h 001i Al zone axis.Needles are directed along the three h 100i Al directions and appear therefore point-like (dark spots)in the viewing direction.The needles have a mean diameter of about 4nm,and an average length about 50nm.Alarger b 'rod (white appearance)is directed in the viewing direction in the centre of the image.ANDERSEN et al.:Al±Mg±Si ALLOY 3287well as from the exit wave (Fig.3)the following relationship between the phases can be found; 001 Al k 010 b 0,"310 Al k 001 b 0,230 Al k 100 b 0This relationship is the same as found earlier byEdwards et al.[7].A corresponding super cell in aluminium can be de®ned by real vectors ~ab 0 2~a Al 3~b Al ,~b b 0~c Al ,~c b 0 À32~a Al 12~b Alwith respective lengths 1.46,0.405and 0.64nm witha monoclinic angle of 105.38.Half of this super cellis outlined in Fig.3on the left side of the b 0par-ticle.The super cell is also C-centred monoclinicsince two neighbor corners of the half cell along ~ab 0fall on Al atoms in di erent layers.The unit cell for b 0is slightly larger than this Al super cell;3.8%along ~ab 0and 5.3%along ~c b 0.The half super cell (asymmetric unit)contains 11Al atoms.The coherency between b 0and aluminium aids in quantifying the shift of the stacking fault (sf)in the particle that is indicated in Fig.3;By using the Al matrix as reference it can be veri®ed that Al atoms at the left interface,at the upper part (e.g.near the white corners of the unit cell of b 0)are at a di er-ent height relative to similar atoms of b 0on the lower part (here with a black ®ll){.This is illus-trated by the two outlined (half)super cells in the Al matrix that are related to the unit cell of b 0in the upper and lower part of the particle.These super cells are shifted a vector a Al [101]/2relative to each other,which indicates that the shift across the stacking fault in the particle is nearly the same.This shift vector is a Burgers vector of the most common dislocation in aluminium.A model of the fault is given in Section5.Fig.2.Ordinary HREM image of b 0-needle in an h 001i zone axis in Al.The c -axis of the needle is in the plane,and the coherency with h 100i Al in the needle direction is evident.As expected,there is no exact zone axis of b 0along the viewing direction h 001i Al zone axis.The left part of the picture was fourier ®ltered;A high pass ®lter was applied to the upper part and a low pass ®lter to the lower partto extract the periodic information from Al (upper)and the b 0-phase (lower)only.{Alternatively,assume the corners of the outlined unit cells of b 0on each side of the stacking fault to be at thesame heights along ~cb 0.The atoms to the left of Ðand in the matrix outside Ðthese corners must then necessarily have similar heights,since the atomic con®guration and distances to the left of these corners are similar,whether above or below the stacking fault.This assumption must be wrong;When keeping track of the atomic columns in the matrix it leads to the conclusion of an Al atom being at two heights at the same time.Therefore,the corners ofthe unit cells along ~cb 0have di erent heights across the stacking fault.ANDERSEN et al.:Al±Mg±Si ALLOY3288In Fig.4the coherency between the two phases can be studied in more detail.This image is a Fast Fourier Transformation (FFT)of part of Fig.3.Only the lower part of the b 0precipitate is included to reduce streaking caused by the stacking fault.After applying a Fourier ®lter (selecting the con-tents inside the circles superposed on the FFT of Fig.4)the Al re¯ections plus the 610,610,403and 403re¯ections of b 0contribute to the image in Fig.5.The white arrows indicate interface dislo-cations between the particle and matrix.For example,the b 0(601)lattice planes with a spacing d 601=0.211nm are parallel with the Al (200)planes with a spacing of 0.203nm.Therefore,one interface dislocation is expected for each 25Al d 200spacings (normal to the [100]axis in the ®gure).Similarly,for the 403planes,for each 20Al d 020spacing one expects an interface dislocation.The spacings between dislocations observed in Fig.5are di erent from the theoretical ones.The reason for this devi-ation is probably variation in local strain in the particle caused by the stacking fault.Although the exact dislocation is not clear in the image,a matrix dislocation found (marked ``d '')also complicates the situation concerning the mis®t dislocations.This dislocation is found to have a Burgers vector b =0.5a Al [101],as was found when a Burgers vec-tor loop was performed around the particle.This is indicated by the open arrow (d).In Fig.6,two ex-perimental di raction images from the [010]and [001]zone axes are shown.The b 0610and 403re¯ections that coincide with the 200and 020Al matrix re¯ections can also be seen in Fig.6(a).In Fig.6(b)the perfect coherency relation of the (010)lattice planes of the b 0phases with (200)lattice planes can be seen from the overlap of the respect-ive di raction spots.3.3.2.Extraction of the atomic coordinates for b 0from the exit wave images .Figure 7(a)is an increased magni®cation of part of Fig.3.Here the atomic columns are represented as white dots.From this image the atomic positions were esti-mated using the following assumptions:(1)The number of atoms in the unit cell is 22,just as the number of atoms in the similar super cell in aluminium.The number ®ts the apparentnumberFig.3.Phase of an reconstructed exit wave of a typical b 0needle in Al is shown.The needle is viewed head-on along its [010]axis,and along an Al h 001i zone axis.Atomic columns appear white.The b 0unit cell and half the corresponding super cell in Al are outlined.Similarly ®lled circles in the matrix or in the precipitate are atoms (Al or Mg)at the same height.A stacking fault (sf)is indicated.The shiftacross the stacking fault can be determined to be a Al [101]/2.ANDERSEN et al.:Al±Mg±Si ALLOY 3289。

(物理化学专业论文)系列Co配位聚合物的合成、结构及自旋转换和光—电性能的研究

(物理化学专业论文)系列Co配位聚合物的合成、结构及自旋转换和光—电性能的研究

系列Co配位聚合物的合成,结构及自旋转换和光一电性能的研究系列Co配位聚合物的合成、结构及自旋转换和光一电性能的研究博士生:金晶指导教师:牛淑云教授专业:物理化学方向:功能分子设计与研制摘要配位聚合物是金属离子和有机配体通过自组装而形成的无限结构的配位化合物。

由于它在光、电、磁、催化等领域具有诱人的应用前景,被认为是当前最有潜在能力的功能材料,已成为无机化学和材料化学领域的研究热点之一。

它的目标是通过金属离子和有机配体间的相互作用,设计合成具有理想结构和特定功能的稳定分子体系和特殊功能的材料。

本文围绕当前关于配位聚合物研究的若干热点,采用溶剂热合成、水热合成和微波合成等方法,以Co(II)或Co(III)为中心原子,通过与有机配体的自组装,共合成了lO种Co(II)或Co(III)及Fe(III)的配位聚合物和3种Co(II)的二聚物,它们的分子式如下:(1){[co(p·4,4’bipy)(4,4’·bipy)2(H20)2],(OH)3-(Me4N)‘4,4’-bipy。

4H20}n(2){[Co(p-4,4’一bipy)(H20)4]-SUC-4H20}。

(3)[C02(Ia2一btec)(phen)2(H20)4](4)【C02(92一btec)(bipyh(H20)4‘H20(5)[C02(1a2-btec)(phen)2(H20)d·2H20(6)fC04(出一btec)(bipy)4(HzO)4]n(7)[Fe2(№一btec)(I_t2-H2btec)(bipy)}2(H20)21n(8)[Fe2(kt2-btec)(pa—H2btec)(phenh(H20)21n(9)[Co(phen)(H20)(№一btec)o5】n(10){[Co(p_4-btec)o5(H20)2】-5H20}nl—————————!!堕堡!燮鱼竺竺竺皇:苎苎垦!垦竺垫竺垄二皇兰堂竺竺窒(11)【co(№一CH2(COO)2)(4,∥-bipy)05(H20)]Ⅱ(12)【co(№一HcOO)dco(H20)4】。

材料科学基础英文词汇

材料科学基础英文词汇

材料科学基础专业词汇:第一章晶体结构原子质量单位Atomic mass unit (amu) 原子数Atomic number原子量Atomic weight 波尔原子模型Bohr atomic model键能Bonding energy 库仑力Coulombic force共价键Covalent bond 分子的构型molecular configuration 电子构型electronic configuration 负电的Electronegative正电的Electropositive 基态Ground state氢键Hydrogen bond 离子键Ionic bond同位素Isotope 金属键Metallic bond摩尔泡利不相容原理MolePauli exclusion principle 元素周期表Periodic table原子atom 分子molecule分子量molecule weight 极性分子Polar molecule量子数quantum number 价电子valence electron范德华键van der waals bond 电子轨道electron orbitals点群point group 对称要素symmetry elements 各向异性anisotropy 原子堆积因数Atomic packing factor体心立方结构body-centered cubic (BCC) 面心立方结构(APF)face-centered cubic (FCC)布拉格定律bragg' s law 配位数coordination number晶体结构crystal structure 晶系crystal system晶体的crystalline 衍射diffraction中子衍射neutron diffraction 电子衍射electron diffraction晶界grain boundary 六方密堆积hexagonal close-packed(HCP)鲍林规则Pauling' s rules NaCl 型结构NaCl -type structure CsCl 型结构Caesium Chloride structure 闪锌矿型结构Blende-type structure纤锌矿型结构Wurtzite structure 金红石型结构Rutile structure萤石型结构Fluorite structure 钙钛矿型结构Perovskite-type structure 尖晶石型结构Spinel-type structure 硅酸盐结构Structure of silicates岛状结构Island structure 链状结构Chain structure层状结构Layer structure 架状结构Framework structure滑石talc 叶蜡石pyrophyllite高岭石kaolinite 石英quartz长石feldspar 美橄榄石forsterite各向同性的isotropic 各向异性的anisotropy晶格lattice 晶格参数lattice parameters密勒指数miller indices 非结晶的noncrystalline多晶的polycrystalline 多晶形polymorphism单晶single crystal 晶胞unit cell电位electron states (化合)价valence电子electrons 共价键covalent bonding金属键metallic bonding 离子键Ionic bonding极性分子polar molecules 原子面密度atomic planar density衍射角diffraction angle 合金alloy粒度,晶粒大小grain size 显微结构microstructure显微照相photomicrograph 扫描电子显微镜scanning electronmicroscope (SEM)透射电子显微镜transmission electron 重量百分数weight percentmicroscope (TEM)tetragonal coordination number 单斜的monoclinic四方的配位数材料科学基础专业词汇:第二章晶体结构缺陷缺陷defect, imperfection 点缺陷point defect线缺陷line defect, dislocation 面缺陷interface defect体缺陷volume defect 位错排列dislocation arrangement 位错线dislocation line 刃位错edge dislocation螺位错screw dislocation 混合位错mixed dislocation晶界grain boundaries 大角度晶界high-angle grainboundaries小角度晶界tilt boundary, 孪晶界twin boundaries位错阵列dislocation array 位错气团dislocation atmosphere 位错轴dislocation axis 位错胞dislocation cell位错爬移dislocation climb 位错聚结dislocation coalescence 位错滑移dislocation slip 位错核心能量dislocation core energy 位错裂纹dislocation crack 位错阻尼dislocation damping位错密度dislocation density 原子错位substitution of a wrongatom间隙原子interstitial atom 晶格空位vacant lattice sites间隙位置interstitial sites 杂质impurities弗伦克尔缺陷Frenkel disorder 肖脱基缺陷Schottky disorder主晶相the host lattice 错位原子misplaced atoms缔合中心Associated Centers. 自由电子Free Electrons电子空穴Electron Holes 伯格斯矢量Burgers克罗各-明克符号Kroger Vink notation 中性原子neutral atom材料科学基础专业词汇:第二章晶体结构缺陷-固溶体compound材料科学基础专业词汇 :第三章熔体结构熔体结构 structure of melt 过冷液体 supercooling melt 玻璃态 vitreous state 软化温度 softening temperature 粘度viscosity表面张力 Surface tension 介稳态过渡相 metastable phase 组织 constitution 淬火quenching退火的 softened 玻璃分相phase separation in glasses体积收缩volume shrinkage材料科学基础专业词汇 :第四章固体的表面与界面表面 surface界面 interface同相界面 homophase boundary 异相界面 heterophase boundary 晶界 grain boundary表面能 surface energy小角度晶界 low angle grain boundary 大角度晶界 high angle grain boundary 共格孪晶界 coherent twin boundary 晶界迁移 grain boundary migration 错配度 mismatch 驰豫 relaxation 重构 reconstuction 表面吸附 surface adsorption 表面能 surface energy倾转晶界 titlt grain boundary 扭转晶界 twist grain boundary 倒易密度 reciprocal density 共格界面 coherent boundary 半共格界面 semi-coherent boundary 非共格界面 noncoherent boundary 界面能interfacial free energy 应变能strain energy晶体学取向关系crystallographic orientation固溶体 化合物 置换固溶体 不混溶固溶体 有序固溶体 solid solution compound substitutional solid solution immiscible solid solution ordered solid solution 固溶强化 solid solution strengthening 固溶度 间隙固溶体 金属间化合物 转熔型固溶体 无序固溶体 取代型固溶体solid solubility interstitial solid solution intermetallics peritectic solid solution disordered solid solution Substitutional solid solutions过饱和固溶体 supersaturated solid solution非化学计量 化合Non stoichiometric惯习面habit plane材料科学基础专业词汇:第五章相图相图phase diagrams 相phase组分component 组元compoonent相律Phase rule 投影图Projection drawing浓度三角形Concentration triangle 冷却曲线Cooling curve成分composition 自由度freedom相平衡phase equilibrium 化学势chemical potential热力学thermodynamics 相律phase rule吉布斯相律Gibbs phase rule 自由能free energy吉布斯自由能Gibbs free energy 吉布斯混合能Gibbs energy of mixing吉布斯熵Gibbs entropy 吉布斯函数Gibbs function热力学函数thermodynamics function 热分析thermal analysis过冷supercooling 过冷度degree of supercooling杠杆定律lever rule 相界phase boundaryboundary 相界线phase boundary line 相界交联phasecrosslinkingboundary 共轭线conjugate lines 相界有限交联phasecrosslinking相界反应phase boundary reaction 相变phase change相组成phase composition 共格相phase-coherent金相相组织phase constentuent 相衬phase contrastcontrast 相衬显微镜phase contrast microscope 相衬显微术phasemicroscopy相分布phase distribution 相平衡常数phase equilibriumconstant相平衡图phase equilibrium diagram 相变滞后phase transition lag相分离phase segregation 相序phase order相稳定性phase stability 相态phase statetransition 相稳定区phase stabile range 相变温度phasetemperature相变压力phase transition pressure 同质多晶转变polymorphic材料科学基础专业词汇 :第六章扩散活化能 activation energy扩散通量diffusion flux 浓度梯度 concentration gradientFick ' s first law 菲克第一定律 菲克第二定律 Fick ' s second law相关因子 correlation factor稳态扩散steady state diffusion非稳态扩散nonsteady-state diffusion扩散系数 diffusion coefficient 跳动几率 jump frequency 填隙机制 interstitalcy mechanism 晶界扩散 grain boundary diffusion 短路扩散 short-circuit diffusion上坡扩散 uphill diffusion下坡扩散Downhill diffusion互扩散系数Mutual diffusion渗碳剂 carburizing浓度梯度 concentration gradient 浓度分布曲线 concentration profile扩散流量 diffusion flux 驱动力driving force间隙扩散interstitial diffusion自扩散self-diffusion表面扩散surface diffusion空位扩散 vacancy diffusion 扩散偶 diffusion couple 扩散方程diffusion equation 扩散机理 diffusion mechanism 扩散特性diffusion property 无规行走Random walk同素异晶转变 allotropic transformation 显微结构 microstructures 不混溶性immiscibility相平衡条件 低共熔体transformationphase equilibrium conditions eutectoid材料科学基础专业词汇 :第七章相变过冷 supercooling 过冷度 degree of supercooling 晶核 nucleus形核 nucleation 形核功 nucleation energy 晶体长大 crystal growth均匀形核homogeneous nucleation非均匀形 核 heterogeneous nucleation 形核率 nucleation rate长大速率growth rate热力学函 数 thermodynamics function临界晶核 critical nucleus 临界晶核 半径 critical nucleus radius 枝晶偏析 dendritic segregation 局部平衡 localized equilibrium平衡分配 系数 equilibriumdistributioncoefficient 有效分配 系数 effective distribution coefficient 成分过冷 constitutional supercooling引领(领 先)相 leading phase 共晶组织 eutectic structure 层状共晶体 lamellar eutectic 伪共晶 pseudoeutectic 离异共晶 divorsed eutectic表面等轴 晶区 chill zone柱状晶区columnar zone中心等轴 晶区 equiaxed crystal zone 定向凝固 unidirectional solidification 急冷技术 splatcooling 区域提纯 zone refining 单晶提拉 法 Czochralski method 晶界形核boundary nucleation 位错形核 dislocation nucleation 晶核长大 nuclei growth本征热缺陷 Intrinsic thermal defect 本征扩散系数 Intrinsic coefficientdiffusion离子电导率Ion-conductivity空位机制Vacancy concentration达肯方程 Dark equation柯肯达尔效应 Kirkendall equation斯宾那多分解spinodal decomposition有序无序转变disordered-order transition马氏体相变martensite phase transformation 马氏体martensite固相反应solid state reaction烧成fire再结晶Recrystallization成核nucleation子晶,雏晶matted crystal异质核化heterogeneous nucleation铁碳合金iron-carbon alloy铁素体ferrite共晶反应eutectic reaction 烧结sintering合金alloy二次再结晶Secondary recrystallization 结晶crystallization耔晶取向seed orientation均匀化热处理homogenization heattreatment渗碳体cementite奥氏体austenite固溶处理solution heat treatment材料科学基础专业词汇:第八、九章固相反应和烧结。

SCI英文期刊缩写对照

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PrinciplesofElectronicMaterialsandDevices第三版课后练习题含

PrinciplesofElectronicMaterialsandDevices第三版课后练习题含

Principles of Electronic Materials and Devices 第三版课后练习题含答案1. 课后练习题解答Chapter 1: Introduction1.1 Why are doped semiconductors more conductive than pure semiconductors?Doping introduces impurities into the semiconductor which create either extra electrons (n-type doping) or electron holes (p-type doping). These extra carriers increase the conductivity of the material.1.2 What is the difference between an intrinsic semiconductor and an extrinsic semiconductor?An intrinsic semiconductor is a pure semiconductor without any intentional impurities. An extrinsic semiconductor is a semiconductor with intentionally added impurities.1.3 What are the differences between a metal and a semiconductor?Metals have a high conductivity and a low bandgap, meaning they have many free electrons and can conduct electricity easily. Semiconductors have a moderate conductivity and a moderate bandgap, meaning theyconduct electricity under certn conditions.1.4 What is the difference between a conductor and an insulator?Conductors have a high conductivity and allow electricity to flow easily. Insulators have a low conductivity and do not allow electricity to flow easily.1.5 What are valence electrons?Valence electrons are the outermost electrons in an atom that are involved in chemical bonding.Chapter 2: Crystal Structures2.1 What is a crystal lattice?A crystal lattice is the regular arrangement of atoms in a crystal.2.2 What is a unit cell?A unit cell is the smallest repeating unit of a crystal lattice.2.3 What is coordination number?Coordination number is the number of nearest neighbor atoms surrounding a given atom in a crystal lattice.2.4 What is a Miller index?Miller index is a notation used to describe planes and directions ina crystal lattice.2.5 What is a defect in a crystal lattice?A defect is an irregularity or imperfection in the crystal lattice structure.Chapter 3: Semiconductor Physics3.1 What is Fermi level?Fermi level is the energy level at which there is a 50% chance of an electron being occupied.3.2 What is intrinsic carrier concentration?Intrinsic carrier concentration is the concentration of electrons and holes in an intrinsic semiconductor at a certn temperature.3.3 What is a doping concentration?Doping concentration is the concentration of impurities (dopants) added to a semiconductor to increase conductivity.3.4 What is drift current?Drift current is the current generated by the movement of charge carriers in an electric field.3.5 What is diffusion current?Diffusion current is the current generated by the movement of charge carriers from an area of high concentration to an area of low concentration.2. 参考文献1.S.O. Kasap,。

第一章 晶体结构

第一章 晶体结构
σ (m)
19
1.3 对称性和布拉维格子的分类
二 基本对称操作
1 i,Cn,σ (m)
2 n度旋转 ─ 反演轴
绕μ轴旋转
2π后再进行中心反演:
n
1,2,3,,4, i, m 八种独立的对称操作。
宏观上看,晶体是有限的,描述晶体宏观对称性 不包含平移对称操作;但从微观上看,晶体是无 限的,为描述晶体结构的对称性,应加上平移对 称操作。
衍射斑点(峰) ↔ 晶格中的一族晶面 倒格子 ↔ 正格子 点子 ↔ 晶面
斑点分布 ↔ 晶格基矢 → 晶体结构
25
1.4 倒格子/倒易点阵
一 定义
设布拉维格子的基矢为:av1 ,av2 , av3

v Rl
=
l1av1
+
l2av2
+
l3av3 决定的格子称为正格子
(direct lattice),
满足
2vπ Gh
4 两点阵位矢的关系
v Rn

v Gh
=
2πm
m为整数
利用
aavvii
• •
v bvj bj
= =
2π 0
i= j i≠ j
( ) Rv n •Gvh = (l1av1 + l2av2 + l3av3 )•
v h1b1
+
v h2b2
+
v h3b3
= l1h1 • 2π + l2h2 • 2π + l3h3 • 2π
按坐标系的性质,晶体可划分为七大晶 系,每一晶系有一种或数种特征性的布拉 维原胞,共有14种布拉维原胞:
三斜(简单三斜) 单斜(简单、底心) 正交(简单、底心、体心、面心) 四方(简单、体心) 三角 六角 立方(简单、体心、面心)

专业英语 微电子技术分册 第6节1.1.2 crystal structure晶体结构化学键(赣南师范大学)

专业英语 微电子技术分册 第6节1.1.2 crystal structure晶体结构化学键(赣南师范大学)
在金刚石晶体所有原子都相同,且在金刚石晶体都有在四面体角 上的四个等距相近原子所包围。
identical [aɪˈdentɪkl] adj.同一的; 相同的
Equidistant [ˌi:kwɪˈdɪstənt] adj.距离相等的,等距的
Tetrahedron [ˌtetrəˈhi:drən] n.四面体
图1-2(b)是体心立方晶体,除了8个角原子外,一个原 子在其立方中心上。在体心立方晶格中,每个原子具有8 个相近原子。 body-centered cubic(体心立方) (bcc)
崇德尚学 求实创新
Chapter 1 Semiconductors Physics
Crystal Structure
多数具有Ⅲ-Ⅴ族原子 化合物半导体具有闪锌矿结构,它有金刚石相 同结构除了一个fcc子晶格结构有一个Ⅲ 族原子Ga和 Ⅴ族原子 As。
zincblende [zɪnkb'lend] 闪锌矿 Identical [aɪˈdentɪkl] adj.同一的;完全同样的
崇德尚学 求实创新
Chapter 1 Semiconductors Physics
have a diamond lattice structure(金刚石晶体结构).
This structure also belongs to the cubic-crystal family
and can be seen as two interpenetrating(渗透) fcc
sublattices(亚点阵) with one sublattice displaced(移
A large number of elements exhibit the fcc lattice form,

a new supermolecular compound18冠

a new supermolecular compound18冠

Synthesis and crystal structure of a new supermolecular compound: [C12H24O6][H3PMo12O40]·22H2O(C12H24O6 18-crown-6) Wansheng You a,Enbo Wang a,*,Qinglin He a,Lin Xu a,Yan Xing b,Hengqing Jia ba Northeast Normal University,Department of Chemistry,Changchun Jilin130024,People’s Republic of Chinab Changchun Institute of Applied Chemistry,Academic Sinica,Changchun Jilin130022,People’s Republic of ChinaReceived8October1999;received in revised form9November1999;accepted9November1999AbstractThe title compound,[C12H24O6][H3PMo12O40]·22H2O,was synthesized by the self-assembly of18-crown-6(abbreviated as C12H24O6or18C6)and H3PMo12O40in the mixed solvent of CH3OH and CH3CN,and was characterized by IR,1H NMR and X-ray diffraction for thefirst time.Crystal data:Triclinic,P 1;a 13:428 3 A;b 13:557 3 A;c 14:642 3 A;a 105:39 3 Њ;b 90:06 3 Њ;g 119:56 5 Њ;V 2207:5 8 A3;Z 1;R1 0:0719;wR2 0:1990:It has a disordered a-Keggin PMo12O3Ϫ40anion,which contains the strong alternating short(mean1.844A˚)and long(mean1.958A˚)Mo–O–Mo bonds.In the unit cell,crown ethers and molybdophosphates are alternatively arranged in good order along c-axis.An oxonium ion is located at the center of a crown ether molecule.,Oxonium ion interacts with18C6by the means of hydrogen bonds(mean 2.7771A˚),which are electrostatic or resonant.The observations show the existence of[H3O(C12H24O6)]ϩ.᭧2000Elsevier Science B.V.All rights reserved.Keywords:Molybdophosphate;Crown ethers;Oxonium ion;Hydrogen bonds;X-ray crystallography1.IntroductionSupermolecular compounds of polyoxometalates, or hybrid materials,produced by combining different inorganic and organic moieties by means of molecular assemblies,are of current interest in some important areas of chemistry such as catalysis,non-linear optical materials,liquid crystals and charge-transfer salts[1–3].Crown ethers have excellent ability of molecular recognition.Furthermore,combining crown ether molecules with polyoxometalates would open up broadfields for studies on supermolecular compounds and hybrid materials[4,5].Thefirst oxonium–crown ether complexes wereobtained by Izatt et al.[6];they consisted ofH3Oϩand dicyclohexano-18-crown-6adductsassociated with ClOϪ4and PFϪ6counterions.There-after,some adducts of oxonium ion and crownether were obtained,associated with BFϪ4;CIOϪ4; PFϪ6;IϪ,BrϪ,PtCl2Ϫ6;SbFϪ6and CF3SOϪ3ions[7–9].In these studies,it was generally assumed thatH3Oϩion in the adducts is located at or near thecenter of the macrocyclic ether cavity and thiswould maximize the electrostatic interactionbetween the two units.This was also expectedon the basis of the strong hydrogen bonds asrevealed by IR spectra.To our acknowledge,thishypothesis had been confirmed by only one X-raydiffraction study on[18C6][H3OϩBF4][10].Thelimited number of the crystal structure data hasJournal of Molecular Structure524(2000)133–1390022-2860/00/$-see front matter᭧2000Elsevier Science B.V.All rights reserved.PII:S0022-2860(99)00447-0www.elsevier.nl/locate/molstruc*Corresponding author.Tel.:ϩ86-43-1562-3492;fax:ϩ86-43-1568-4009.E-mail address:huchw@(E.Wang).hampered the structural study on the interaction between the oxonium ion and crown ether.To the best of our knowledge,the adducts of oxonium ion and crown ether associated with polyox-ometalates have not been reported so far.We describe herein the synthesis and crystal structure of a new supermolecular compound of crown ether and poly-oxometalate acid:[C12H24O6][H3PMo12O40]·22H2O.It is a good example of an interaction between crown ether and the oxonium ion.2.Experimental2.1.Materials and methodsAll chemicals purchased were of reagent grade and used without further purification.Infrared spectrum was recorded as KBr pellets on a Nicolet170SX FT-IR spectrometer;1H NMR spectrum was obtained with a Bruker Am-500spectrometer operating at 500MHz using CD3OD-d4as solvent.C,H elemental analysis were performed on Perkin–Elmer240c Elemental analyzer.P and Mo elemental analysis were performed on a PLASMA SPECI(I)quant-ometer.TG analysis was performed on a Q-Derivato-graph thermal analyzer.2.2.Preparation of[C12H24O6]·[H3PMo12O40]·22H2O H3PMo12O40was prepared according to the litera-ture[11].18C6(0.1g)in20ml acetonitrile was added drop-wise to a20ml methyl alcohol solution of0.8g H3PMo12O40with stirring for1h.The yellow solution was allowed to stand for3–5days and the product, [C12H24O6][H3PMo12O40]·22H2O,was collected. Yield:25%.Anal.calc.:C,5.8;H,2.8;P,1.2;Mo, 46.3%;found:C,6.0;H,2.9;P,1.1;Mo,45.7%.Calc. total loss was28.8%;found30.1%.2.3.X-ray crystallographyThe data were collected on Siemens P4four-circle diffractometer(Mo-Ka radiation l 0:71073 A;v–2u scan mode).A yellowish-green single crystal wasW.You et al./Journal of Molecular Structure524(2000)133–139134Table1Crystal data and structure refinementEmpirical formula C12H71Mo120O68PFormula weight2485.97Temperature293(2)KWavelength0.71073A˚Crystal system TriclinicSpace group P 1Unit cell dimensions a 13:428 3 A a 105:39 3 Њb 13:557 3 A b 90:06 3 Њc 14:642 3 A g 119:56 5 ЊVolume,z2207.5(8)A˚3,1Density(calc.) 1.870Mg/m3Absorption coefficient 1.758mmϪ1F(000)1206Crystal size0:46×0:38×0:16mm3u Range for data collection 1.95–23.01Limiting indicesϪ1ՅhՅ13;Ϫ13ՅkՅ12;Ϫ16ՅlՅ16Reflections collected7071Independent reflections5937 R int 0:0184Max.and min transmission0.62097and0.51046Data/restraints/parameters5927/152/433Goodness-of-fit on F2 1.004Final R indices IϾ2s I R1 0:0719;wR2 0:1990R indices(all data)R1 0:1057;wR2 0:2271Extinction coefficient0.0008(2)Largest diff.peak and hole 1.291andϪ0.816e A˚Ϫ3mounted inside a glass capillary.A semiempirical absorption correction (PSISCAN)was applied.The hydrogen atoms of crown ether were introduced in calculated positions with fixed C–H distance andisotropic displacement parameters C–H 0:97 Afor ϾCH 2and U iso 0:08 A2 :A summary of the crystallographic data and structure parameters for [C 12H 24O 6][H 3PMo 12O 40]·22H 2O is provided in TableW.You et al./Journal of Molecular Structure 524(2000)133–139135Table 2Atomic coordinates ×104 and equivalent isotropic displacementparameters A×103 for [C 12H 24O 6][H 3PMo 12O 40]·22H 2O.U (eq)is defined as one-third of the trace of the orthogonalized U ij tensorxy z U (eq)Mo(1)2433(1)6262(1)6801(1)63(1)Mo(2)Ϫ1565(1)1869(1)3801(1)64(1)Mo(3)Ϫ2842(1)3185(1)5448(1)66(1)Mo(4)1027(1)3185(1)5447(1)67(1)Mo(5)Ϫ392(1)4215(1)7159(1)65(1)Mo(6)Ϫ1172(1)6262(1)6806(1)64(1)P 05000500046(1)O(1)Ϫ2264(4)443(4)3230(3)84(2)O(2)Ϫ4136(4)2308(5)5657(4)85(2)O(3)Ϫ559(5)3893(5)8196(3)101(2)O(4)3552(4)6808(4)7621(4)81(1)O(5)Ϫ1747(4)6818(4)7623(4)81(1)O(6)1445(4)2298(4)5665(4)86(2)O(7)2200(4)4677(4)6177(4)86(2)O(8)305(4)7519(4)6951(3)82(2)O(9)2230(4)7520(4)6971(4)84(2)O(10)1220(4)5520(4)7428(4)84(2)O(11)93(4)3237(4)6463(4)90(2)O(12)Ϫ2516(4)1981(4)4705(4)90(2)O(13)Ϫ1866(4)3235(4)6470(4)85(2)O(14)Ϫ3161(4)3394(4)4309(4)87(2)O(15)Ϫ1560(5)6629(5)5714(4)92(2)O(16)Ϫ2517(4)4678(4)6168(4)82(2)O(17)Ϫ498(4)1993(4)4698(4)89(2)O(18)125(5)3921(5)4556(5)46(2)O(19)Ϫ691(4)5532(4)7437(4)88(2)O(20)Ϫ1199(5)3920(6)4556(5)44(2)O(21)Ϫ517(5)5232(6)4229(5)43(2)O(22)749(5)5233(6)4222(5)42(2)O(23)6355(4)4122(5)9110(4)103(2)O(24)4363(4)3734(5)8075(4)106(2)O(25)2762(4)4125(5)9109(4)104(2)C(1)7533(6)4829(8)9479(6)112(4)C(2)6132(8)3866(8)8117(7)115(2)C(3)4923(6)3101(7)7767(7)112(2)C(4)3166(7)3090(7)7767(7)113(3)C(5)2739(7)3888(7)8102(7)116(3)C(6)2325(6)4882(7)9483(7)118(4)O(10W)50000500010000177(4)Table 3Selected bond lengths (A˚).Symmetry transformations used to generate equivalent atoms:#1,Ϫx ;Ϫy ϩ1;Ϫz ϩ1;#2,Ϫx ϩ1;Ϫy ϩ1;Ϫz ϩ2Mo(1)–O(4) 1.631(5)Mo(1)–O(9) 1.812(6)Mo(1)–O(10) 1.836(5)Mo(1)–O(14)#1 1.948(6)Mo(1)–O(7) 1.961(5)Mo(1)–O(20)#1 2.473(8)Mo(1)–O(21)#1 2.498(6)Mo(2)–O(1) 1.632(5)Mo(2)–O(17) 1.856(6)Mo(2)–O(12) 1.870(6)Mo(2)–O(8)#1 1.967(5)Mo(2)–O(9)#1 1.997(6)Mo(2)–O(20) 2.493(7)Mo(2)–O(18) 2.499(6)Mo(3)–O(2) 1.638(5)Mo(3)–O(16) 1.942(5)Mo(3)–O(14) 1.847(6)Mo(3)–O(12) 1.950(6)Mo(3)–O(13) 1.954(6)Mo(3)–O(20) 2.468(7)Mo(3)–O(22)#1 2.495(6)Mo(4)–O(6) 1.653(6)Mo(4)–O(7) 1.850(4)Mo(4)–O(15)#1 1.875(6)Mo(4)–O(17) 1.948(5)Mo(4)–O(11) 1.956(6)Mo(4)–O(18) 2.457(9)Mo(4)–O(21)#1 2.492(8)Mo(5)–O(3) 1.675(5)Mo(5)–O(11) 1.833(6)Mo(5)–O(13) 1.841(5)Mo(5)–O(10) 1.954(4)Mo(5)–O(19) 1.958(6)Mo(5)–O(22)#1 2.456(8)Mo(5)–O(21)#1 2.469(7)Mo(6)–O(5) 1.642(5)Mo(6)–O(8) 1.831(4)Mo(6)–O(19) 1.835(6)Mo(6)–O(15) 1.937(6)Mo(6)–O(16) 1.963(4)Mo(6)–O(18)#1 2.470(8)Mo(6)–O(22)#1 2.492(8)P–O(21)#1 1.501(8)P–O(21) 1.501(8)P–O(22) 1.513(7)P–O(22)#1 1.513(7)P–O(20)#1 1.525(5)P–O(20) 1.525(5)P–O(18)#1 1.526(7)P–O(18) 1.526(7)O(23)–C(1) 1.393(8)C(23)–C(2) 1.397(11)O(24)–C(3) 1.392(10)O(24)–C(4) 1.399(9)O(25)–C(6) 1.411(10)O(25)–C(5) 1.421(11)C(1)–C(6)#2 1.453(13C(2)–C(3) 1.424(11)C(4)–C(5)1.438(12)C(6)–C(1)#21.453(13)Fig.1.IR spectrum of [C 12H 24O 6][H 3PMo 12O 40]·22H 2O.1,the partial atomic coordinates with standard devia-tions and isotropic atomic displacement parameters are provided in Table 2and the selected bond lengths are listed in Table 3.3.Results and discussionThe title compound was prepared by mixing 18C6and H 3PMo 12O 40in a mixed solvent of CH 3CN and CH 3OH.The product was obtained as yellowish-green crystals with an yield of about 25%.Elemental analysis,IR and NMR data of the compound are consistent with the crystal structure.3.1.IR spectrumThe IR spectrum of the title compound is shown in Fig. 1.The characteristic peaks at 803,880,957,and 1062cm Ϫ1demonstrate that PMo 12O 3Ϫ40is a a -Keggin structure.The peaks at 1600–1100cm Ϫ1are characteristic of 18C6.The stretching mode of H 3O ϩis a very broad band at ϳ2900cm Ϫ1,which overlaps the sharper peaks arising from the C–H stretching motions of the crown ether.The C–O–C stretching vibration of 18C6was observed at 1250cm Ϫ1(s).W.You et al./Journal of Molecular Structure 524(2000)133–139136Fig.2.1H NMR spectrum of [C 12H 24O 6][H 3PMo 12O 40]·22H 2O.Fig.3.Structure of the PMo 12O 3Ϫ40anion.3.2.1H NMR spectrumThe1H NMR spectrum of the title compound isshown in Fig.2.The line at3.743ppm is assignedto CH2of18C6and the line at4.955ppm to H3Oϩand H2O.These data are characteristic of the structureof18C6.3.3.The crystal structureA single crystal X-ray diffraction analysis of thetitle compound showed the compound consisted of18C6,H3Oϩand PMo12O3Ϫ40:The PMo12O3Ϫ40anion shows the same type of crystallographic disorder ashas been found in many crystal structures with Kegginanions,which has been explained by several authors[5,12–14].The central atom P is located at the inver-sion center0,5000,5000(see Table2).It shows thatthe central atom P is surrounded by a cube of eightoxygen atoms,with each oxygen site half-occupied,and the Mo atoms situated at the corners of a regularcubooctahedron(Fig.3).P–O bonds range from1.501(8)–1.526(7)A˚(mean 1.516A˚).The Mo–O t(terminal)bonds are in the usual range of1.631(5)–1.675(5)A˚(mean1.645A˚).The Mo–O(P)bonds arein the range of2.456(8)–2.499(62)A˚(mean2.480A˚).All Mo–Mo distances are nearly equal,rangingfrom 3.5553(11)–3.5696(10)A˚(mean 3.5627A˚).The alternating long and short Mo–O–Mo bonds inall MoO6octahedra fall into two well-resolved cate-gories:the long pairs of Mo–O b(bridge)bonds in therange1.937(6)–1.997(6)A˚(mean1.958A˚)and theshort pairs of Mo–O b bonds in the range1.812(6)–1.875(6)A˚(mean1.844A˚).In the title compound,O10W is referred to asoxonium ion.The oxonium ion plays an importantrole in bonding18C6with PMo12O3Ϫ40:There are interactions between the oxonium ion and the crownether molecule(Fig.4).The oxonium ion is located onthe center of the plane defined by O(23),O(24),O(25),O(23A),O(24A)and O(25A)of the crownether molecule.The oxonium ion bonds with sixoxygen atoms of the crown ether in nearly identicaldistances,O(23,23A), 2.7825(69)A˚;O(24,24A),2.7569(50)A˚;O(25,25A), 2.7919(40)A˚(mean2.7771A˚),which are appreciably shorter thanexpected for the crown ether(2.95A˚)[9].It is difficultto determine which of six oxygen atoms of the crownW.You et al./Journal of Molecular Structure524(2000)133–139137Fig.4.View of the O10W and structure of18-crown-6showing the interactions between them.ether molecule bond with hydrogen atoms of the oxonium ion.This interaction or the hydrogen bonding is electrostatic or resonant,contrary to Behr’s opinion [15].The above-mentioned 1H NMR result,in which the line for ϾCH 2is not split,supports the conclusion.In the unit cell,polyoxometalates and crown ethers are alternatively arranged in good order along c -axis (Fig.5).Water molecules occupy the space left by polyoxometalates and crown ethers.Except O10W,42water molecules are disordered,each with an occu-pancy factor of 0.5.They form hydrogen bonds with each other,but almost not with polyoxometalates and crown ethers.4.ConclusionBy the self-assembly,the supermolecular compound,[C 12H 24O 6][H 3PMo 12O 40]·22H 2O,was synthesized.Itconsists of PMo 12O 3Ϫ40;18C6,oxonium ions andwater molecules.PMo 12O 3Ϫ40possesses a disordered a -Keggin structure.An oxonium ion is located at the center of a crown ether molecule.It is a good example of the interaction between the crown ether and an oxonium ion.Supplementary Data relating to this article are deposited with the B.L.L.D.as Supplementary Publi-cation No.SUP 26637.AcknowledgementsThis project was financially supported by the State Key Laboratory of Coordination Chemistry of Nanjing University of China and the National Science Council of China.We thank Dr Xu Yan for helpful discussion and revision on the crystal structure.W.You et al./Journal of Molecular Structure 524(2000)133–139138Fig.5.Packing diagram viewed down the a -axis for [C 12H 24O 6][H 3PMo 12O 40]·22H 2O.References[1]E.Coronado,C.J.Go´mez-Garcı´a,Chem.Rev.98(1998)273and references therein.[2]E.B.Wang, C.W.Hu,L.Xu,Concise Polyoxmetalates,Chemical Industry,Beijing,1997.[3]J.M.Lehn,Angew.Chem.27(1989)89.[4]X.M.Lu,R.F.Zhang,S.C.Liu,Polyhedron16(1997)3865.[5]R.Neier,C.Trojanowski,R.Mattes,J.Chem.Soc.DaltonTrans.(1995)2521.[6]R.M.Izatt,B.L.Haymore,J.J.Christensen,J.Chem.Soc.mun.(1972)1308.[7]R.Che`nevert, A.Rodrigue,M.Pigeon-Gosselin,Can.J.Chem.60(1982)853.[8]G.S.Heo,R.A.Bartsch,.Chem.47(1982)3557.[9]R.Che`nevert,A.Rodrigue,P.Beauchesne,Can.J.Chem.62(1984)2293.[10]J.P.Behr,P.Dumas,D.Moras,J.Am.Chem.Soc.104(1982)4540.[11]X.Wu,J.Bio.Chem.43(1920)189.[12]J.Peng,E.B.Wang,Y.S.Zhou,J.Chem.Soc.Dalton Trans.(1998)3865.[13]H.T.Evans,M.T.Pope,Inorg.Chem.23(1984)501.[14]P.Le Magueres,L.Ouahab,D.Golhen,O.Pena,Inorg.Chem.33(1994)5180.[15]J.P.Behr,P.Dumas,D.Moras,J.Am.Chem.Soc.104(1982)4540.W.You et al./Journal of Molecular Structure524(2000)133–139139。

结构化学 英语

结构化学 英语

结构化学英语Structured ChemistryChemistry is a vast and complex field of study that encompasses the understanding of the composition, structure, and properties of matter. One of the key aspects of chemistry is the concept of structure, which plays a crucial role in determining the behavior and characteristics of chemical substances. Structural chemistry, a subfield of chemistry, focuses on the spatial arrangement of atoms and molecules, and how this arrangement influences the chemical and physical properties of materials.The study of structure in chemistry involves the investigation of the three-dimensional (3D) arrangements of atoms within molecules and the intermolecular interactions that exist between them. This knowledge is essential for understanding the behavior of chemical systems, predicting their properties, and designing new materials with desired characteristics.One of the fundamental tools used in structural chemistry is X-ray crystallography. This technique involves the bombardment of a crystalline sample with X-rays, which interact with the electrons inthe atoms of the crystal. The resulting diffraction pattern can be analyzed to determine the precise arrangement of atoms within the crystal structure. This information is crucial for understanding the properties of solid-state materials, such as metals, minerals, and ceramics.Another important technique in structural chemistry is nuclear magnetic resonance (NMR) spectroscopy. This method utilizes the magnetic properties of atomic nuclei to provide information about the chemical environment and connectivity of atoms within a molecule. NMR spectroscopy is widely used in the identification and characterization of organic compounds, as well as in the study of biomolecules, such as proteins and nucleic acids.In addition to these experimental techniques, computational methods have also become increasingly important in the field of structural chemistry. Quantum mechanical calculations, such as density functional theory (DFT), allow researchers to model the behavior of atoms and molecules at the quantum level, providing insights into their electronic structure and chemical reactivity.One of the key applications of structural chemistry is in the design and development of new materials. By understanding the relationship between the structure of a material and its properties, chemists can engineer substances with specific characteristics, suchas high strength, enhanced thermal stability, or improved electrical conductivity. This knowledge is particularly valuable in fields like materials science, nanotechnology, and catalysis.Another important aspect of structural chemistry is its role in the study of biological systems. The structures of proteins, nucleic acids, and other biomolecules are crucial for understanding their functions and interactions within living organisms. This knowledge is essential for the development of new drugs and the understanding of disease processes.In conclusion, the field of structural chemistry is a fundamental and multifaceted discipline that underpins our understanding of the physical and chemical properties of matter. Through the use of advanced experimental and computational techniques, structural chemists continue to unravel the mysteries of the molecular world, paving the way for new discoveries and innovations that have the potential to transform our lives.。

材料科学基础_概念中英文

材料科学基础_概念中英文

材料科学基础_概念中英文材料科学基础重要概念(中英文)晶体学基础晶体学(crystallography)布喇菲点阵(Bravais lattice)晶体生成学(crystallogeny)体心化(body centering)晶体结构学(crytallogy)底心化(base centering)晶体化学(crystallochemistry)特殊心化(special centering)晶体结构(crystal structure)晶面(crystal plane)点阵平移矢量(lattice translation vector)晶(平)面指数(crystal – plane indice)初级单胞(primitive cell)晶带(zone)点阵常数(lattice parameter)倒易空间(reciprocal space)对称变换(symmetry translation)参考球(reference sphere)主动操作(active operation)经线(longitude)国际符号(international notation)赤道平面(equator plane)点对称操作(point symmetry operation)极网(pole net)旋转操作(rotation operation)结构基元(motif)二次旋转轴(two - fold axe, diad)晶体几何学(geometrical crystallography)四次旋转轴(four –fold axe, tetrad)晶体物理学(crystallographysics)镜像(mirror image)等同点(equivalent point)对形关系(enantiomorphic relation)点阵(lattice)反演(inversion)初基矢量(primitive translation vector)晶系(crystal system)复式初基单胞(multiple – primitive cell)单斜晶系(monoclinic system)对称元素(symmetry element)四方晶系(正方晶系)(tetragonal system)对称群(symmetry group)六方晶系(hexagonal system)被动操作(passive operation)熊夫利斯符号(Schoenflies notation)点阵有心化(centering of lattice)恒等操作(单位操作)(identity)面心化(face centering)旋转轴(rotation axe)单面心化(one – face centering)三次旋转轴(three – fold axe, triad)晶向(crystal direction)六次旋转轴(six – fold axe, hexad)晶向(方向)指数(crystal – direction indice)镜面(mirror plane)晶面族(form of crystal - plane)同宇(congruent)倒易点阵(reciprocal lattice)旋转反演(rotation - inversion)极射赤面投影(stereographic projection)三斜晶系(triclinic system)参考网络(reference grid)正交晶系(斜方晶系)(orthogonal system)纬线(latitude)立方晶系(cubic system)吴氏网(Wulff net)菱方晶系(rhombohedral system)标准投影网(standard projection)晶体结构晶体结构(crystal structure)鲍林规则(Pauling’s rule)结构符号(structure symbol)氧化物结构(oxide structure)致密度(空间填充效率)(efficiency of space 岩盐结构(rock structure)filling)纤维锌矿结构(wurtzite structure)配位数(coordination number)闪锌矿结构(zinc blende structure)配位多面体(coordination polyhedra)尖晶石结构(spinel structure)拓扑密堆相(topologically close –packed α-Al2O3型结构(corundum structure)phase)金红石结构(rutile structure)金属晶体(metal crystal)萤石结构(fluorite structure)离子晶体(ionic crystal)钙钛矿结构(perovskite structure)共价晶体(covalent crystal)钛铁矿结构(ilmenite structure)分子晶体(molecular crystal)氯化铯结构(cesium chloride structure)原子半径和离子半径(atomic radius and ionic 硅酸盐(silicate)radius)链状硅酸盐(chain silicate)原子结构体积(volume of structure per atom)层状硅酸盐(phyllo silicate)体密度(volumetric density,ρV)岛状硅酸盐(island silicate)面密度(planar density, ρP)骨架结构(framework structure)线密度(linear density, ρL)镁橄榄石结构(forsterite structure)金刚石结构(diamond structure)辉石(picrite)纳米碳管(carbon nano tube)粘土矿(clay mineral)置换固溶体(substitutional solid solution)高岭石(kaolinite)填隙固溶体(interstitial solid solution)云母(mica)尺寸因素(size factor)石英(quartz)价电子浓度(valance electron concentration)鳞石英(tridymite)电子化合物(electron compound)方石英(cristobalite)间隙化合物(interstitial compound)钙长石(anorthite)尺寸因素化合物(size–factor compound)分子筛(molecule sift)Laves相(Laves phase) 同素异构性(allotropy)σ相(σphase)多形性(polymorphism)有序固溶体(超结构)[ordered solid solution 准晶(quasicrystal)(super lattice) ] 彭罗斯拼砌(Penrose tiling)长程有序参数(long-range order parameter)短程有序参数(shot-range order parameter)晶体缺陷不完整性(imperfection)向错(disclination)点缺陷(point imperfection)沃特拉过程(V olterra’s process)空位(vacancy)刃型位错(edge dislocation)自间隙原子(self-interstitial)螺型位错(screw dislocation)构型熵(configuration entropy)混合型位错(mixed dislocation)肖脱基缺陷(Schottky defect)柏氏回路(Burgers circuit)弗兰克缺陷(Frenkel defect)柏氏矢量(Burgers vector)内禀点缺陷(intrinsic point defect)位错环(dislocation loop)非禀点缺陷(extrinsic point defect)位错密度(dislocation density)线缺陷(line imperfection)位错的弹性能(elastic energy of dislocation)位错(dislocation)位错线张力(tension of dislocation)位错宽度(width of dislocation)层错矢量(fault vector)保守运动(conservative motion)外延层错(extrinsic fault)非保守运动(nonconservative motion)层错能(stacking fault energy)滑移(slip)肖克莱部分为错(Shockley partial dislocation)滑动(glissile)铃木气团(Suzuki atmosphere)攀移(climb)弗兰克位错(Frank partial dislocation)自力(self-force)扩展位错(extended dislocation)渗透力(osmotic force)压杆位错(stair-rod partial dislocation)映像力(image force)Lomer-Cottrell 位错(Lomer-Cottrell弯结(kink)dislocation)割阶(jog)L-C阻塞(L-C Lock)柯垂尔气体(Cottrell atmosphere)赫斯阻塞(Hirth lock)史诺克气体(Snoek atmosphere)分位错(fractional dislocation)弗兰克-瑞德位错源(Frank-Read source)超点阵(superlattice)B-H位错源(Bardeen-Herring source)反相畴(Antiphase domain)位错塞积群(dislocation pile-up group)反相畴界(Antiphase boundary, APB)全位错(perfect dislocation)超位错(super-dislocation)堆垛层错(stacking fault)弗兰克-纳巴罗回路(Frank-Nabarro circuit)部分为错或不全位错(partial dislocation)向错强度(disclination strength)内禀层错(intrinsic fault)条纹织构(schlieren texture)表面能(surface energy) 适配(matching)晶界(grain boundary) 共格晶界(coherent boundary)小角度晶界(low angle grain boundary)非共格晶界(incoherent boundary)大角度晶界(high angle grain boundary 晶界迁移率(grain boundary mobility)倾转晶界(tilt boundary)取向关系(orientation relationship)扭转晶界(twist boundary)气泡(gas babble)相界(phase boundary) 空洞(void)扩散不可逆过程(irreversible process)传质过程(mass transport)扩散(diffusion)扩散距离(diffusion distance)唯象系数(phenomenological coefficient)间隙机制(interstitial mechanism)挤列结构(crowdion configuration)哑铃结构(dumbbell split configuration)空位机制(vacancy mechanism)换位机制(exchange mechanism)扩散流量(flux)参考系(reference frame)实验参考系(laboratory reference frame)点阵参考系(latticereference frame)菲克第一定律(Fick’s first law)菲克第二定律(Fick’s second law)扩散系数(diffusion coefficient)禀性扩散系数(intrinsic diffusion coefficient)互扩散系数(mutual diffusion coefficient)自扩散系数(self-diffusion coefficient)稳态扩散(steady state diffusion)Kirkendall 效应(Kirkendall effect)Matano 平面(Matano interface)热力学因子(thermodynamic factor)同位素(isotope)示踪物(tracer)扩散偶(diffusion couple)误差函数(error function)哑变量(dummy)数值方法(numerical method)有限差分(finite-difference)收敛性(convergence)截断误差(truncation error)舍入误差(round-off error)相关系数(correlation factor)高扩散率通道(high-diffusivity path)体扩散(volume diffusion)晶界扩散(grain boundary diffusion)位错扩散(dislocation diffusion)表面扩散(surface diffusion)迁移率(mobility)渗透率(permeability)凝固分配系数(partition coefficient)枝晶偏析(dendrite segregation)区域提纯(zone-refining)亚共晶合金(hypoeutectic alloy)胞晶的形成(cell formation)过共晶合金(hypereutectic alloy)胞状树枝晶(cellular dendrite)片状(lamellar)柱状树枝晶(columnar dendrite)棒状(rod-like)共晶凝固(eutectic solidification)共晶领域(eutectic colony)包晶凝固(peritectic solidification)伪共晶(pseudo-eutectic)偏析(segregation)离异共晶(divorced eutectic)熔焊(fusion welding)激冷区(chill zone)快速凝固(rapid solidification process)柱状晶区(columnar zone)连续铸造(continuous casting)等轴晶区(equiaxed zone)树枝状显微偏析(dendritic microsegregation)收缩晶区(shrinkage cavity)非平衡杠杆定律(non-equilibrium lever rule)疏松(porosity)组分过冷(constitutional supercooling)非金属夹杂物(non-metallic inclusion)胞状组织(cellular structure)熔池(weld pool)二次枝晶(secondary dendrite)混合区(composite region)一次支晶(primary dendrite)热影响区(heat-affected zone)。

纳米材料专业英语

纳米材料专业英语

第一章晶体结构缺陷 defect, imperfection 点缺陷 point defect线缺陷 line defect, dislocation 面缺陷 interface defect体缺陷 volume defect 位错排列 dislocation arrangement位错线 dislocation line 刃位错 edge dislocation螺位错 screw dislocation 混合位错 mixed dislocation晶界 grain boundaries 大角度晶界 high-angle grain boundaries小角度晶界 tilt boundary, 孪晶界 twin boundaries位错阵列 dislocation array 位错气团 dislocation atmosphere位错轴 dislocation axis 位错胞 dislocation cell位错爬移 dislocation climb 位错聚结 dislocation coalescence位错滑移 dislocation slip 位错核心能量 dislocation core energy位错裂纹 dislocation crack 位错阻尼 dislocation damping位错密度 dislocation density 原子错位 substitution of a wrong atom 间隙原子 interstitial atom 晶格空位 vacant lattice sites间隙位置 interstitial sites 杂质 impurities弗伦克尔缺陷 Frenkel disorder 肖脱基缺陷 Schottky disorder主晶相 the host lattice 错位原子 misplaced atoms缔合中心 Associated Centers. 自由电子 Free Electrons电子空穴 Electron Holes 伯格斯矢量 Burgers克罗各-明克符号 Kroger Vink notation 中性原子 neutral atom原子质量单位 Atomic mass unit (amu) 原子数 Atomic number原子量 Atomic weight 波尔原子模型 Bohr atomic model键能 Bonding energy 库仑力 Coulombic force共价键 Covalent bond 分子的构型 molecular configuration电子构型 electronic configuration 负电的 Electronegative正电的 Electropositive 基态 Ground state氢键 Hydrogen bond 离子键 Ionic bond同位素 Isotope 金属键 Metallic bond摩尔 Mole 分子 Molecule泡利不相容原理 Pauli exclusion principle 元素周期表 Periodic table原子 atom 分子 molecule分子量 molecule weight 极性分子 Polar molecule量子数 quantum number 价电子 valence electron范德华键 van der waals bond 电子轨道 electron orbitals点群 point group 对称要素 symmetry elements各向异性 anisotropy 原子堆积因数 atomic packing factor(APF)体心立方结构 body-centered cubic (BCC) 面心立方结构 face-centered cubic (FCC)布拉格定律bragg’s law配位数 coordination number晶体结构 crystal structure 晶系 crystal system晶体的 crystalline 衍射 diffraction中子衍射 neutron diffraction 电子衍射 electron diffraction晶界 grain boundary 六方密堆积 hexagonal close-packed (HCP)鲍林规则Pauling’s rules NaCl型结构 NaCl-type structureCsCl型结构 Caesium Chloride structure 闪锌矿型结构 Blende-type structure 纤锌矿型结构 Wurtzite structure 金红石型结构 Rutile structure萤石型结构 Fluorite structure 钙钛矿型结构 Perovskite-type structure尖晶石型结构 Spinel-type structure 硅酸盐结构 Structure of silicates岛状结构 Island structure 链状结构 Chain structure层状结构 Layer structure 架状结构 Framework structure滑石 talc 叶蜡石 pyrophyllite高岭石 kaolinite 石英 quartz长石 feldspar 美橄榄石 forsterite各向同性的 isotropic 各向异性的 anisotropy晶格 lattice 晶格参数 lattice parameters密勒指数 miller indices 非结晶的 noncrystalline多晶的 polycrystalline 多晶形 polymorphism单晶 single crystal 晶胞 unit cell电位 electron states (化合)价 valence电子 electrons 共价键 covalent bonding金属键 metallic bonding 离子键 Ionic bonding极性分子 polar molecules 原子面密度 atomic planar density衍射角 diffraction angle 合金 alloy 配位数 coordination number粒度,晶粒大小 grain size 显微结构 microstructure显微照相 photomicrograph 扫描电子显微镜 scanning electron microscope (SEM)透射电子显微镜 Transmission electron microscope (TEM)重量百分数 weight percent 四方的 tetragonal 单斜的 monoclinic第二章晶体结构缺陷-固溶体固溶度 solid solubility 间隙固溶体 interstitial solid solution金属间化合物 intermetallics 转熔型固溶体 peritectic solid solution无序固溶体 disordered solid solution取代型固溶体 Substitutional solid solutions非化学计量化合物 Nonstoichiometric compound第三章熔体结构熔体结构 structure of melt 过冷液体 supercooling melt玻璃态 vitreous state 软化温度 softening temperature粘度 viscosity 表面张力 Surface tension介稳态过渡相 metastable phase 组织 constitution淬火 quenching 退火的 softened玻璃分相 phase separation in glasses 体积收缩 volume shrinkage第四章固体的表面与界面表面 surface 界面 interface 惯习面 habit plane同相界面 homophase boundary 异相界面 heterophase boundary晶界 grain boundary 表面能 surface energy小角度晶界 low angle grain boundary 大角度晶界 high angle grain boundary 共格孪晶界 coherent twin boundary 晶界迁移 grain boundary migration错配度 mismatch 驰豫 relaxation重构 reconstuction 表面吸附 surface adsorption表面能 surface energy 倾转晶界 titlt grain boundary扭转晶界 twist grain boundary 倒易密度 reciprocal density共格界面 coherent boundary 半共格界面 semi-coherent boundary非共格界面 noncoherent boundary 界面能 interfacial free energy应变能 strain energy 晶体学取向关系 crystallographic orientation 第五章相图相图 phase diagrams 相 phase 组分 component 组元 compoonent 相律 Phase rule 投影图 Projection drawing浓度三角形 Concentration triangle 冷却曲线 Cooling curve成分 composition 自由度 freedom相平衡 phase equilibrium 化学势 chemical potential热力学 thermodynamics 相律 phase rule吉布斯相律 Gibbs phase rule 自由能 free energy吉布斯自由能 Gibbs free energy 吉布斯混合能 Gibbs energy of mixing 吉布斯熵 Gibbs entropy 吉布斯函数 Gibbs function热力学函数 thermodynamics function 热分析 thermal analysis过冷 supercooling 过冷度 degree of supercooling杠杆定律 lever rule 相界 phase boundary相界线 phase boundary line 相界交联 phase boundary crosslinking共轭线 conjugate lines 相界有限交联 phase boundary crosslinking相界反应 phase boundary reaction 相变 phase change相组成 phase composition 共格相 phase-coherent金相相组织 phase constentuent 相衬 phase contrast相衬显微镜 phase contrast microscope 相衬显微术 phase contrast microscopy 相分布 phase distribution 相平衡常数 phase equilibrium constant相平衡图 phase equilibrium diagram 相变滞后 phase transition lag相分离 phase segregation 相序 phase order相稳定性 phase stability 相态 phase state相稳定区 phase stabile range 相变温度 phase transition temperature相变压力phase transition pressure 同质多晶转变polymorphic transformation同素异晶转变allotropic transformation 相平衡条件phase equilibrium conditions显微结构 microstructures 低共熔体 eutectoid不混溶性 immiscibility第六章扩散下坡扩散 Downhill diffusion 互扩散系数 Mutual diffusion渗碳剂 carburizing 浓度梯度 concentration gradient浓度分布曲线 concentration profile 扩散流量 diffusion flux驱动力 driving force 间隙扩散 interstitial diffusion自扩散 self-diffusion 表面扩散 surface diffusion空位扩散 vacancy diffusion 扩散偶 diffusion couple扩散方程 diffusion equation 扩散机理 diffusion mechanism扩散特性 diffusion property 无规行走 Random walk达肯方程 Dark equation 柯肯达尔效应 Kirkendall equation本征热缺陷 Intrinsic thermal defect 本征扩散系数 Intrinsic diffusion coefficient 离子电导率 Ion-conductivity 空位机制 Vacancy concentration第七章相变过冷 supercooling 过冷度 degree of supercooling晶核 nucleus 形核 nucleation形核功 nucleation energy 晶体长大 crystal growth均匀形核 homogeneous nucleation 非均匀形核 heterogeneous nucleation形核率 nucleation rate 长大速率 growth rate热力学函数 thermodynamics function临界晶核 critical nucleus 临界晶核半径 critical nucleus radius枝晶偏析 dendritic segregation 局部平衡 localized equilibrium平衡分配系数 equilibrium distributioncoefficient 有效分配系数 effective distribution coefficient成分过冷 constitutional supercooling 引领(领现相) leading phase共晶组织 eutectic structure 层状共晶体 lamellar eutectic伪共晶 pseudoeutectic 离异共晶 divorsed eutectic表面等轴晶区 chill zone 柱状晶区 columnar zone中心等轴晶区 equiaxed crystal zone 定向凝固 unidirectional solidification 急冷技术 splatcooling 区域提纯 zone refining单晶提拉法 Czochralski method 晶界形核 boundary nucleation位错形核 dislocation nucleation 晶核长大 nuclei growth斯宾那多分解spinodal decomposition 有序无序转变disordered-order transition马氏体相变 martensite phase transformation 马氏体 martensite第八、九章固相反应和烧结固相反应 solid state reaction 烧结 sintering烧成 fire 合金 alloy再结晶 Recrystallization 二次再结晶 Secondary recrystallization成核 nucleation 结晶 crystallization子晶,雏晶 matted crystal 耔晶取向 seed orientation异质核化heterogeneous nucleation 均匀化热处理homogenization heat treatment铁碳合金 iron-carbon alloy 渗碳体 cementite铁素体 ferrite 奥氏体 austenite共晶反应 eutectic reaction 固溶处理 solution heat treatment。

化学期刊缩写

化学期刊缩写

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一维链状有机锡配合物_Ph_3Sn_OCOC_5H_4NO_n的合成和晶体结构

一维链状有机锡配合物_Ph_3Sn_OCOC_5H_4NO_n的合成和晶体结构

收稿日期:2008-05-19。

收修改稿日期:2008-07-17。

国家自然科学基金(No.20271025)和山东省教育厅基金(No.J07WC03)资助项目。

*通讯联系人。

E -mail :zhongjungao@第一作者:高中军,男,36岁,讲师;研究方向:金属有机化学。

****************研究简报一维链状有机锡配合物[Ph 3Sn(OCOC 5H 4NO)]n 的合成和晶体结构高中军*,1牟金秀2王广辉2(1济宁学院化学系,曲阜273155)(2潍坊科技学院,寿光262700)关键词:有机锡配合物;氧化-3-吡啶甲酸;合成;晶体结构中图分类号:O614.43+2文献标识码:A文章编号:1001-4861(2008)11-1916-03Synthesis and Crystal Structure of the One -dimensional InfiniteChain Organotin Complex [Ph 3Sn(OCOC 5H 4NO)]nGAO Zhong -Jun *,1MU Jin -Xiu 2WANG Guang -Hui 2(1Department of Chemistry,Jining University,Qufu,Shandong 273155)(2College of Weifang Science and Technology,Shouguang,Shandong 262700)Abstract:A organotin complex [Ph 3Sn(OCOC 5H 4NO)]n has been synthesized by the reaction of tripnenyltin hydro -xide with pyridine -3-carboxylic acid N -oxide in 1∶1ratio and characterized by elemental analysis,IR and 1H NMR.The crystal structure has been determined by X -ray single crystal diffraction.The crystal belongs to monoclinic space group P 21/c ,with a =1.37829(7)nm,b =1.63585(8)nm,c =1.88101(9)nm,β=96.048(2)°,Z =8,V =4.2175(4)nm 3,D c =1.537Mg ·m -3,μ=1.236mm -1,F (000)=1952,R =0.0343,wR =0.1063,GOF=1.006.In the molecular str -ucture of the title compound,the tin atoms are five -coordinated in a trigonal bipyramidal geometry.A one -dimensional linear polymer is formed through the interaction between the O atoms of N -O and tin atoms of the adjacent DC:682506.Key words:organotin compound;pyridine -3-carboxylic acid N -oxide;synthesis;crystal structure有机锡配合物因其具有很强的生物活性以及多变的结构而日益受到人们的关注[1~4]。

Gd掺杂的多铁性陶瓷BiFeO-铁酸铋

Gd掺杂的多铁性陶瓷BiFeO-铁酸铋

Gd掺杂的多铁性陶瓷BiFeO铁酸铋论文导读::是少数在室温下同时具有铁电性和铁磁性的多铁性材料之一。

是用稀土元素对A、B位进行离子掺杂,用La3+。

论文关键词:铁酸铋,多铁性材料,掺杂1 引言BiFeO3是一种具有扭曲钙钛矿结构(R3c空间群)的单相磁电材料,室温下同时具有铁电(T C=830℃)与G型反铁磁(T N=370℃)有序,是少数在室温下同时具有铁电性和铁磁性的多铁性材料之一。

BiFeO3中铁电性和铁磁性的共存使其在信息存储、磁电传感器等领域具有广阔的应用前景。

科学家虽然很早就发现了BiFeO3中铁电与铁磁性的共存态,但在传统固相反应法制备的样品中易出现Bi2Fe4O9和Bi25FeO39等杂相,致使样品的漏导增大,铁电性能降低,大大限制了其应用前景。

此外,从磁性与晶体对称性关系考虑,BiFeO3特有的自旋螺旋G型反铁磁结构,只允许弱铁磁性的产生,而同时具有较强的铁电性与铁磁性是作为新型记忆材料和电容电感一体化的关键所在,纯的BiFeO3显然不能满足这一要求,因此要BiFeO3走向应用,就必须增强其铁电性与铁磁性,同时减少其高漏导。

为了改善BiFeO3陶瓷的多铁性能,学者们主要从两个方面进行了研究:一是将BiFeO3陶瓷与其他具有强铁电性的钙钛矿材料复合(与PbTiO3、BaTiO3等[1-3]复合,形成二元或三元固溶体体系),从而破坏其特有的自旋螺旋反铁磁结构,增强其多铁性;二是用稀土元素对A、B位进行离子掺杂,用La3+,Nd3+铁酸铋,Sm3+等[4-6]离子替代晶体中的A位Bi3+离子,或用Co3+,Ti4+,Zr4+等[7-9]磁性或非磁性离子替代B位Fe3+以抑制氧空位的生成,同时破坏其反铁磁结构,改善多铁性能。

关于Gd掺杂的BiFeO3陶瓷研究已有报道,Khomchenko等[10-13]研究发现随着掺杂量的增大,其发生了由三角钙钛矿结构向正交钙钛矿结构的转变,并给出了Bi1-x Gd x FeO3陶瓷随着掺杂量变化的磁电相图论文的格式。

两个一维镁配位聚合物的合成、晶体结构和荧光性质

两个一维镁配位聚合物的合成、晶体结构和荧光性质

两个一维镁配位聚合物的合成、晶体结构和荧光性质陈金喜;范巧玉【摘要】Two one-dimensional coordination polymers[Mg(Himdc)(DMF)(H2O)]n (1) and [Mg(Hpdc)(H2O)2]n (2) have been hydrothermally synthesized by the reactions of Mg(NO3)2·6H2O and 4,5-imidazoledicarboxylic acid or 3,5-pyrazoledicarboxylic acid, and characterized by elemental analysis, FTIR, thermal gravimetric analysis and X-ray diffraction single-crystal structural analysis. Two compounds crystallize in the orthorhombic and monoclinic, space group P212121 and P21/c for 1 and 2, respectively. Compound 1 shows one-dimensional zigzag chain structure, compound 2 shows one-dimensional linear chain structure, the chain and chain of 1 and 2 are both connected by hydrogen bonds to form three-dimensional structure. The fluorescence spectra of 1 and 2 were measured, the luminescence behaviors probably results from π→π* electronic transition of the respective ligand. CCDC: 832380,1;832381, 2.%本文以Mg(NO3)2· 6H2O分别与4,5-咪唑二羧酸(4,5-imidazoledicarboxylic acid,H3imdc)和3,5-吡唑二羧酸(3,5-pyrazoledicarboxylic acid,H3pdc)通过水热反应合成了2个新型镁的一维配位聚合物[Mg(Himdc)(DMF)(H2O)]n(1)和[Mg(Hpdc)(H2O)2]n (2),并对配位聚合物1和2进行了元素分析、FTIR、热重分析和X-射线单晶结构解析等表征.X-射线单晶结构解析表明配位聚合物1和2的晶体分别属于正交晶系与单斜晶系,空间群分别为P212121和P21/c.配合物1为一维Z字型链状结构,配合物2为一维线型链状结构,2个配合物中的链与链之间均通过氢键相互作用堆积成三维结构.对1和2进行固态荧光光谱分析,结果显示,1和2的荧光发射峰与各自的配体的荧光发射峰峰形一致,说明2个配合物的荧光发射峰应归属于各自配体内的π→π*电子跃迁.【期刊名称】《无机化学学报》【年(卷),期】2011(027)011【总页数】6页(P2185-2190)【关键词】配位聚合物;4,5-咪唑二羧酸;3,5-吡唑二羧酸;氢键;荧光性质【作者】陈金喜;范巧玉【作者单位】东南大学化学化工学院,南京211189;东南大学化学化工学院,南京211189【正文语种】中文【中图分类】O614.22配位聚合物是由金属离子或金属簇与有机桥连配体通过自组装在空间上形成的一维、二维或三维框架结构。

scriptamaterialia缩写

scriptamaterialia缩写

scriptamaterialia缩写【篇一:scriptamaterialia缩写】出版社或管理机构杂志由出版或管理。

issn号:1359-6462杂志简介/稿件收录要求published by elsevier science. issn: 1359-6462.scripta materialia, the companion journal to acta materialia, is an international journal for the science of materials. its purpose is to provide a medium for the rapid publication of cutting edge short papers which advance the understanding of structural, nanostructured, and functional materials, both crystalline and amorphous, across all materials classes. emphasis is placed on those aspects of the science of materials that address: (i) the relationship between the microstructure of materials and their properties, including mechanical (from both the defect and continuum viewpoints), electrical, magnetic and chemical properties; (ii) the relationship between the microstructure of materials and the thermodynamics, kinetics and mechanisms of processes occurring within solids; (iii) the synthesis and processing of materials, with emphasis on microstructural mechanisms and control. (iv) advances in the characterization of the microstructure and properties of materials. scripta materialia encourages the submission of letters of opinion, and of comments, particularly concerning work published in acta materialia and scripta materialia. the journal also publishes viewpoint sets, which are a series of short articles focused on topics of current interest within the scope of the journal and co-ordinated by invited editors.杂志主页/投稿链接 (点击4012次) |(点击1342次) 常用链接 | | | | | | | |【篇二:scriptamaterialia缩写】proc. r. soc. london, ser. bproceedings of the royal society of london series bprocess biochem.process biochemistryprocess control qual.process control and qualityprocess saf. environ. prot.process safety and environment protectionprocess saf. prog.process safety progressprog. biophys. mol. biol.progress in biophysics and molecular biologyprog. biotechnol.progress in biotechnologyprog. chem. org. nat. prod.progressprog. colloid polym. .progress in colloid and polymer scienceprog. cryst. growth charact. mater.progress in crystal growth and characterization of materials prog. energy combust. sci.progress in energy and combustion scienceprog. heterocycl. chem.progress in heterocyclic chemistryprog. ind. microbiol.progress in industrial microbiologyprog. inorg. chem.progress in inorganic chemistryprog. lipid res.progress in lipid researchprog. mater sci.progress in materials scienceprog. nucl. magn. reson. spectrosc.progress in nuclear magnetic resonance spectroscopy prog. org. coat.progress in organic coatingsprog. pap. recycl.progress in paper recyclingprog. polym. sci.progress in polymer scienceprog. react. kinet.progress in reaction kineticsprog. solid state chem.progress in solid state chemistryprog. surf. sci.progress in surface scienceprot. metprotection of metalsprotein eng.protein engineeringprotein sci.protein scienceprzem. chem.przemysl chemicznypure appl. chem.pure and applied chemistryqquant. struct.-act. relat.quantitative structure-activity relationshipsquim. anal. 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testingruss. j. org. chem.russian journal of organic chemistryruss. metall.russian metallurgyss. afr. j. chem.south african journal of chemistrysampe j.sampe journalscand. j. metall.scandinavian journal of metallurgysci. china, ser. bscience in china, series b chemistrysci. china, ser. escience in china, series e technological sciences sci. prog.science progresssci. technol. weld. joiningscience and technology of welding and joining /font> sci. total environ.science of the total environmentscripta mater.scripta materialiasemicond. sci. technol.semiconductor science and technologysens. actuators, asensors and actuators, asens. actuators, bsensors and actuators, bsep. purif. methodsseparation and purification methodssep. purif. technol.separation and purification technologysep. sci. technol.separation science and technologysilic. indus.silicates industrielssmart mater. struct.smart materials and structuressoil biol. biochem.soil biology and biochemistrysol. energy mater. sol. cellssolar 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chem.theoretical and experimental chemistrytheor. chem. acc.theoretical chemistry accountstheor. found. chem. eng.theoretical foundations of chemical engineering thermochim. actathermochimica actathin solid filmsthin solid filmstissue eng.tissue engineeringtop. appl. phys.topics in applied physicstop. biol. inorg. chem.topics in biological and inorganic chemistrytop. catal.topics in catalysistop. curr. chem.topics in current chemistrytop. inorg. chem.topics in inorganic chemistrytop. fluoresc. spectrosc.topics in fluorescence spectroscopytoxicol. appl. pharmacol.toxicology and applied pharmacologytoxicol. environ. chem.toxicological and environmental chemistrytoxicol. lett.toxicology letterstoxicol. sci.toxicological sciencestrac, trends anal. chem.trac trends in analytical chemistrytrace elem. electrolytestrace elements and electrolytestrans. inst. met. finish.transactions of the institution of metal finishingtrans. inst. min. metall., sect. atransactions of the institution of mining and metallurgy section atrans. inst. min. metall., sect. btransactions of the institution of mining and metallurgy section btrans. inst. min. metall., sect. ctransactions of the institution of mining and metallurgy section ctransition met. chem.transition metal chemistrytrends biochem. scitrends in biochemical sciencestrends biotechnol.trends in biotechnologytsvetn. met. 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