515-1016中文资料
515-1020-806中文资料
515-1020-806MicroLED SMT LEDsfor use with 515-1020-806PART NO.PAGE #Recommended597-3xx1-4xx1-27 &1-28Alternatives597-3xxx-4xx1-27 &1-28597-5x11-4xx1-27597-5202-4xx1-27LED alternatives may not produce optimum lightoutputSolder Pad/Holes layout shown is for single colorLEDs listed under “Recommended” categoryContact factory for other layouts.Features•High transmissivity polycarbonate material•UL94V-0 compliance•ESD protection (circuit isolation from front panel)•Wide viewing angle•Arrays reduce insertion costs•Secures to PCB by press-fitLED DataFor absolute maximum ratings and other electrical and opticaldata on the recommended LEDs, refer to LED data sheets.Dialight Optopipe®Light Pipe DescriptionThis light pipe’s circular light emitting surfaces appear bright and have good optical isolation. The assembly is reliably held in place by 3 press-fit pins located between the light pipe elements. This Optopipe®functions as a through-the-case indicator with a textured finish on the 4 light emitting surfaces that increases its viewing angle. The recommended light sources are Dialight's 597 Series 1206 Type SMT LEDs. The LEDs are mounted in a straight line on a 0.250" pitch. Made from black PBT, the light shield restricts light bleed between the elements. Both the water clear transmissive polycarbon-ate light pipe material and the light shield are rated UL94-V0. The light pipe has a 35% oxygen index, and the light shield has a 32% oxygen index.Dialight can provide custom Optopipe®solutions for your applications.Operating/Storage Temperature–30°C to +100°C®Optical Light Pipe Assemblyand Light Shield, 4 Array元器件交易网Dialight Corporation • 1501 Route 34 South • Farmingdale, NJ 07727 • TEL: (732) 919-3119 • FAX: (732) 751-5778 •。
0511021100;中文规格书,Datasheet资料
51102-1100 Active
Mini-Lock™ 2.50mm Pitch Mini-Lock™ Wire-to-Board Housing, Friction Lock, 11 Circuits
Product Specification PS-51102-002 (PDF) RoHS Certificate of Compliance (PDF) Series Crimp Housings 51102 Signal, Wire-to-Board, Wire-to-Wire Mini-Lock™ Mini-Lock™ 800754306553 image - Reference only EU RoHS ELV and RoHS Compliant REACH SVHC Contains SVHC: No Low-Halogen Status Not Low-Halogen China RoHS
General
Product Family Series Application Overview Product Name UPC
Physical
Circuits (maximum) Color - Resin Gender Glow-Wire Compliant Lock to Mating Part Material - Resin Net Weight Number of Rows Packaging Type Panel Mount Pitch - Mating Interface Stackable Temperature Range - Operating 11 Natural Female No Yes Polyester 749.600/mg 1 Bag No 2.50mm No -40°C to +105°C
GAT 515-2011附录A(规范性附录)初步设计技术方案要求
附录A（规范性附录）初步设计技术方案要求1现状与需求分析1.1交通情况分析对调查的交通情况从省（自治区）基本情况、省（自治区）交通情况、省（自治区）公路交通管理措施情况、省（自治区）交通管理科技建设情况等不同层面进行描述和汇总，归纳存在的问题。
1.2需求分析根据可行性研究报告、设计任务书等，结合建设单位提出的管理需求和交通情况调查中发现的问题，对系统建设进行用户需求、功能需求、建设需求和其他需求分析。
2基本要求2.1设计原则遵照GA/T 515.1—2011第5章，结合当地实际情况，提出具体设计原则。
2.2建设目标2.2.1总体目标应提出系统建设的总体目标。
2.2.2具体目标应提出系统建设的具体目标，将总体目标以建设的各个层面进行分解，提出定性和定量的指标。
2.3建设范围和地点应明确系统建设的覆盖范围，纳入系统的地（市、州）和设备部署地点。
2.4设备选型依据应明确设备选型的依据，并列明计算的原则、方法和过程。
3结构设计3.1整体结构3.1.1结构及结构模式交通指挥系统应包括信息采集，传输，显示、处理、存储、控制，信息发布四个部分。
具体结构模式按行政分区、交通管理勤务模式等进行构建。
应对结构以下内容进行设计：a) 物理结构；b) 逻辑结构；c) 相关系统边界关系。
3.1.2系统组成应明确交通指挥系统组成，包括下列子系统的部分或全部：a) 交通电视监视系统；b) 指挥中心；c) 集成指挥平台；d) 交通流信息采集系统；e) 交通事件检测系统；f) 交通信息发布系统；g) 机动车查缉布控系统；h) 通信系统等。
3.2子系统结构设计3.2.1子系统结构设计内容应对子系统结构以下内容进行设计：a) 逻辑结构；b) 物理结构；c) 与内部相关子系统逻辑结构；d) 与外部相关子系统逻辑结构。
3.2.2子系统组成交通指挥系统各子系统由前端、传输、中心系统（信息显示、记录、处理、控制）等组成，根据具体情况进行设计。
汉语水平词汇等级大纲
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当下983.当中984.当儿985.当前986.当即987.当口儿989.当场990.当头991.当庭992.当时993.当然994.当真995.当着996.形成997.彻夜998.彻底999.彼1000.彼时1001.彼此1002.往1003.往往1004.待1005.待到1006.很1007.很多1008.很少1009.後来1010.後面1011.得1012.得了1013.得出1014.得到1015.得天独厚1016.得起1017.心里1019.必定1020.必将1021.必然1022.必要1023.必须1024.快1025.快要1026.忽地1027.忽然1028.怎1029.怎么1030.怎么办1031.怎么样1032.怎奈1033.怎样1034.怎麽1035.怕1036.急匆匆1037.怪1038.怪不得1039.总之1040.总是1041.总的来看1042.总的来说1043.总的说来1044.总结1045.总而言之1046.恍然1047.恐怕1049.恰好1050.恰如1051.恰巧1052.恰恰1053.恰恰相反1054.恰逢1055.您1056.您们1057.您是1058.惟其1059.惯常1060.意思1061.愤然1062.愿意1063.慢说1064.成为1065.成年1066.成年累月1067.成心1068.我1069.我们1070.我是1071.我的1072.或1073.或则1074.或多或少1075.或是1076.或曰1077.或者1079.战斗1080.截然1081.截至1082.所1083.所以1084.所在1085.所幸1086.所有1087.所谓1088.才1089.才能1090.扑通1091.打1092.打从1093.打开天窗说亮话1094.扩大1095.把1096.抑或1097.抽冷子1098.拦腰1099.拿1100.按1101.按时1102.按期1103.按照1104.按理1105.按说1106.挨个1107.挨家挨户1109.挨着1110.挨门挨户1111.挨门逐户1112.换句话说1113.换言之1114.据1115.据实1116.据悉1117.据我所知1118.据此1119.据称1120.据说1121.掌握1122.接下来1123.接着1124.接著1125.接连不断1126.放量1127.故1128.故意1129.故此1130.故而1131.敞开儿1132.敢1133.敢于1134.敢情1135.数/ 1136.整个1137.断然1139.方便1140.方才1141.方能1142.方面1143.旁人1144.无1145.无宁1146.无法1147.无论1148.既1149.既...又1150.既往1151.既是1152.既然1153.日复一日1154.日渐1155.日益1156.日臻1157.日见1158.时候1159.昂然1160.明显1161.明确1162.是1163.是不是1164.是以1165.是否1166.是的1167.显然1169.普通1170.普遍1171.暗中1172.暗地里1173.暗自1174.更1175.更为1176.更加1177.更进一步1178.曾1179.曾经1180.替1181.替代1182.最1183.最后1184.最大1185.最好1186.最後1187.最近1188.最高1189.有1190.有些1191.有关1192.有利1193.有力1194.有及1195.有所1196.有效1197.有时1199.有的1200.有的是1201.有着1202.有著1203.望1204.朝1205.朝着1206.末##末1207.本1208.本人1209.本地1210.本着1211.本身1212.权时1213.来1214.来不及1215.来得及1216.来看1217.来着1218.来自1219.来讲1220.来说1221.极1222.极为1223.极了1224.极其1225.极力1226.极大1227.极度1229.构成1230.果然1231.果真1232.某1233.某个1234.某些1235.某某1236.根据1237.根本1238.格外1239.梆1240.概1241.次第1242.欢迎1243.欤1244.正值1245.正在1246.正如1247.正巧1248.正常1249.正是1250.此1251.此中1252.此后1253.此地1254.此处1255.此外1256.此时1257.此次1259.殆1260.毋宁1261.每1262.每个1263.每天1264.每年1265.每当1266.每时每刻1267.每每1268.每逢1269.比1270.比及1271.比如1272.比如说1273.比方1274.比照1275.比起1276.比较1277.毕竟1278.毫不1279.毫无1280.毫无例外1281.毫无保留地1282.汝1283.沙沙1284.没1285.没奈何1286.没有1287.沿1289.注意1290.活1291.深入1292.清楚1293.满1294.满足1295.漫说1296.焉1297.然1298.然则1299.然后1300.然後1301.然而1302.照1303.照着1304.牢牢1305.特别是1306.特殊1307.特点1308.犹且1309.犹自1310.独1311.独自1312.猛然1313.猛然间1314.率尔1315.率然1316.现代1317.现在1319.理当1320.理该1321.瑟瑟1322.甚且1323.甚么1324.甚或1325.甚而1326.甚至1327.甚至于1328.用1329.用来1330.甫1331.甭1332.由1333.由于1334.由是1335.由此1336.由此可见1337.略1338.略为1339.略加1340.略微1341.白1342.白白1343.的1344.的确1345.的话1346.皆可1347.目前1349.直接1350.相似1351.相信1352.相反1353.相同1354.相对1355.相对而言1356.相应1357.相当1358.相等1359.省得1360.看1361.看上去1362.看出1363.看到1364.看来1365.看样子1366.看看1367.看见1368.看起来1369.真是1370.真正1371.眨眼1372.着1373.着呢1374.矣1375.矣乎1376.矣哉1377.知道1379.确定1380.碰巧1381.社会主义1382.离1383.种1384.积极1385.移动1386.究竟1387.穷年累月1388.突出1389.突然1390.窃1391.立1392.立刻1393.立即1394.立地1395.立时1396.立马1397.竟1398.竟然1399.竟而1400.第1401.第二1402.等1403.等到1404.等等1405.策略地1406.简直1407.简而言之1409.管1410.类如1411.粗1412.精光1413.紧接着1414.累年1415.累次1416.纯1417.纯粹1418.纵1419.纵令1420.纵使1421.纵然1422.练习1423.组成1424.经1425.经常1426.经过1427.结合1428.结果1429.给1430.绝1431.绝不1432.绝对1433.绝非1434.绝顶1435.继之1436.继后1437.继续1439.维持1440.综上所述1441.缕缕1442.罢了1443.老1444.老大1445.老是1446.老老实实1447.考虑1448.者1449.而1450.而且1451.而况1452.而又1453.而后1454.而外1455.而已1456.而是1457.而言1458.而论1459.联系1460.联袂1461.背地里1462.背靠背1463.能1464.能否1465.能够1466.腾1467.自1469.自从1470.自各儿1471.自后1472.自家1473.自己1474.自打1475.自身1476.臭1477.至1478.至于1479.至今1480.至若1481.致1482.般的1483.良好1484.若1485.若夫1486.若是1487.若果1488.若非1489.范围1490.莫1491.莫不1492.莫不然1493.莫如1494.莫若1495.莫非1496.获得1497.藉以。
电厂常用金属材料牌号及其应用
电厂常用金属材料牌号及其应用一、电厂常用金属材料及分类方法火力发电厂由锅炉、汽轮机、发电机和辅机组成。
使用的金属材料很多，主要以钢材为主，还有铸钢、铸铁、以及铜、铝、钛等有色金属。
根据制造者和使用者的不同，对一种材料常用几种不同的分类方法。
1、钢的分类钢，是对含碳量质量百分比介于0.02%至2.11%之间的铁碳合金的统称（以铁为主要元素、含碳量一般在2%以下，并含有其他元素的材料）。
钢的化学成分可以有很大变化，只含碳元素的钢称为碳素钢（碳钢）或普通钢；在实际生产中，钢往往根据用途的不同含有不同的合金元素，比如：锰、镍、钒等等。
⑴按化学成分分类⑵按钢的品质分类⑶按冶炼方法分类⑷按显微组织分类⑸按用途分类⑹按强度分类2、铸铁的分类3、铜的分类二、化学元素及其在钢中的作用1、电厂常用金属材料中的化学元素钢中常存五元素：C、Si、Mn、S、P 钢中五害元素：Sn、Pb、As、Sb、Bi 2、钢中主要元素在钢中的作用三、世界主要国家钢号表示方法1、中国钢号表示方法根据GB/T 221-2008《钢铁产品牌号表示方法》规定，钢号采用汉语拼音、化学元素符号和阿拉伯数字相结合的原则，即：⑴钢号中添加的合金元素采用化学元素符号表示，如Cr、Mo、Mn…等。
混合稀土元素用Re或Xt表示。
⑵产品名称、用途、冶炼和浇注方法等，一般采用汉语拼音的缩写字母表示。
⑶钢中主要化学元素含量用阿拉伯数字表示。
不同钢种其钢号表示方法有所不同，分别举例说明如下：a、碳素结构钢：Q235A（A3）钢“235”表示屈服强度下限数值，单位MPa，“A”表示质量等级代号，共分为A、B、C、D四级。
b、优质碳素钢：20，20g钢钢号头两位数字表示平均含碳量的万分之几，“20”表示平均含碳量为0.2%。
钢号后缀“g”表示锅炉用钢。
c、碳素工具钢：T8A“T”代表碳素工具钢类，数字表示平均含碳量的千分之几，“8”表示平均含碳量为0.8%。
钢号后缀“A”表示高级优质。
0460151006;中文规格书,Datasheet资料
This document was generated on 08/16/2012PLEASE CHECK FOR LATEST PART INFORMATIONPart Number:46015-1006Status:ActiveOverview:Mini-Fit® Plus HCSDescription:4.20mm Pitch Mini-Fit® Plus HCS Header, Dual Row, Vertical, 10 Circuits, without Snap-in Plastic Peg PCB Lock, without Drain Holes, PA Polyamide Nylon 6/6, UL 94V-2, Tin (Sn) 1.27µm Over Nickel (Ni) PlatingDocuments:3D ModelProduct Specification PS-45750-001 (PDF)Drawing (PDF)RoHS Certificate of Compliance (PDF)Agency CertificationULE29179GeneralProduct Family PCB Headers Series46015Application Power, Wire-to-BoardCommentsCurrent = 13A max. per circuit when header is mated to a receptacle loaded with 45750 Mini-Fit® Plus HCS Crimp Terminal Crimped to 16 AWG wire., See Molex product specification PS-45750-001 for additional current de-rating information.OverviewMini-Fit® Plus HCS Product Name Mini-Fit® Plus HCS UPC822350737357PhysicalBreakawayNo Circuits (Loaded)10Circuits (maximum)10Color - ResinNatural Durability (mating cycles max)75First Mate / Last Break No Flammability94V-2Glow-Wire Compliant No Guide to Mating Part No Keying to Mating Part None Lock to Mating Part YesMaterial - MetalCopper Alloy Material - Plating MatingTin Material - Plating Termination Tin Material - Resin Nylon Net Weight2.866/g Number of Rows 2Orientation Vertical PC Tail Length 1.80mm PCB Locator Yes PCB RetentionNone PCB Thickness - Recommended 1.78mm Packaging TypeTray Pitch - Mating Interface 4.20mm Plating min - Mating2.540µm Plating min - Termination 1.270µm Polarized to Mating Part Yes Polarized to PCBYesSeriesimage - Reference onlyEU RoHSChina RoHSELV and RoHS Compliant REACH SVHCContains SVHC: No Low-Halogen Status Low-HalogenNeed more information on product environmental compliance?Email productcompliance@For a multiple part number RoHS Certificate of Compliance, click herePlease visit the Contact Us section for any non-product compliance questions.Search Parts in this Series 46015SeriesMates With5557 Mini-Fit Jr.™ Receptacle HousingShrouded FullyStackable NoSurface Mount Compatible (SMC)NoTemperature Range - Operating-40°C to +105°CTermination Interface: Style Through HoleElectricalCurrent - Maximum per Contact13AVoltage - Maximum600VSolder Process DataDuration at Max. Process Temperature (seconds)5Lead-free Process Capability Wave Capable (TH only)Max. Cycles at Max. Process Temperature1Process Temperature max. C260Material InfoReference - Drawing NumbersProduct Specification PS-45750-001Sales Drawing SD-46015-001This document was generated on 08/16/2012PLEASE CHECK FOR LATEST PART INFORMATION分销商库存信息: MOLEX 0460151006。
日历页面
var nStr2 = new Array('初','十','廿','卅','□');
var monthName = new Array("JAN","FEB","MAR","APR","MAY","JUN","JUL","AUG","SEP","OCT","NOV","DEC");
0x04970,0x0a4b0,0x0b4b5,0x06a50,0x06d40,0x1ab54,0x02b60,0x09570,0x052f2,0x04970,
0x06566,0x0d4a0,0x0ea50,0x06e95,0x05ad0,0x02b60,0x186e3,0x092e0,0x1c8d7,0x0c950,
"1223 小年",
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<html>
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<title>万年历查询</title>
简单的字大全2000个
简单的字大全2000个在我们的日常生活中，中文是我们最常使用的语言之一。
中文有着悠久的历史和丰富的文字体系，其中包含了许多简单而常用的字。
在这里，我将为您列举出2000个简单的中文字。
以下是这2000个简单的中文字，分为四个部分。
每个部分都包含500个字，总计2000个。
第一部分：1 - 5001. 一2. 乙3. 二4. 十5. 丁6. 壹7. 亖8. 七9. 人10. 入11. 乃12. 儿13. 八14. 刀15. 九16. 千17. 又19. 丸20. 凡21. 三22. 川23. 上24. 七25. 下26. 乎27. 寸28. 与29. 个30. 个31. 丸32. 允33. ：34. ，35. ！36. ？37. “38. ”39. 。
40. ：41. ；42. -43. *44. /46. =47. ≤48. <49. >50. ≥51. %52. €53. £54. ¥55. $第二部分：501 - 1000 501. 签502. 求503. 文504. 王505. 玉506. 每507. 比508. 毛509. 氏510. 半511. 母512. 水513. 水514. 永515. 汉517. 污518. 汤519. 机520. 汛521. 汽522. 池523. 汗524. 江525. 江526. 沙527. 沉528. 沈529. 没530. 沐531. 河532. 法533. 泛534. 泪535. 波536. 油537. 注538. 泡539. 泼540. 泻541. 泵542. 泰544. 洪545. 洞546. 洗547. 津548. 洪549. 涂550. 泼551. 渡552. 浓553. 洁554. 洗555. 流556. 浅557. 浆558. 派559. 浊560. 波561. 洲562. 浸563. 浩564. 海565. 涵566. 活567. 误568. 洲569. 海571. 浪572. 渲573. 笔574. 矩575. 临576. 资577. 单578. 港579. 激580.而581. 湖582. 湾583. 活584. 漂585. 泽586. 环587. 球588. 漠589. 漏590. 活591. 商592. 衰593. 修594. 顾595. 歌596. 华598. 祝599. 神600. 祈第三部分：1001 - 1500 1001. 虎1002. 统1003. 细1004. 和1005. 万1006. 微1007. 维1008. 苍1009. 苏1010. 丽1011. 苗1012. 肃1013. 羔1014. 苦1015. 苹1016. 苗1017. 杯1018. 英1019. 权1020. 影1021. 目1022. 图1023. 印1024. 混1025. 渗1026. 温1027. 游1028. 湿1029. 清1030. 港1031. 渴1032. 液1033. 渔1034. 湾1035. 源1036. 渐1037. 湖1038. 净1039. 滩1040. 浑1041. 渣1042. 院1043. 浪1044. 潜1045. 渡1046. 渡1047. 湿1048. 漠1049. 漩1050. 菜1051. 董1052. 萧1053. 荷1054. 草1055. 荣1056. 落1057. 草1058. 药1059. 草1060. 茨1061. 葆1062. 芽1063. 茶1064. 草1065. 茂1066. 庄1067. 范1068. 蓦1069. 看1070. 鸢1071. 蒙1072. 蒸1073. 糕1074. 董1075. 马1076. 骑1077. 高1078. 元1079. 磨1080. 祈1081. 评1082. 礼1083. 祸1084. 祷1085. 祖1086. 祝1087. 祭1088. 神1089. 祈1090. 说1091. 秩1092. 序1093. 分1094. 成1095. 划1096. 彩1097. 普1098. 粉1099. 串1100. 景第四部分：1501 - 2000 1501. 酿1502. 酸1504. 将1505. 旺1506. 啸1507. 轰1508. 易1509. 伐1510. 夷1511. 片1512. 況1513. 进1514. 交1515. 迷1516. 迅1517. 远1518. 违1519. 运1520. 迷1521. 追1522. 通1523. 进1524. 近1525. 返1526. 进1527. 追1528. 逃1529. 追1531. 这1532. 运1533. 迢1534. 连1535. 逗1536. 这1537. 通1538. 进1539. 违1540. 造1541. 进1542. 多1543. 进1544. 贫1545. 跟1546. 踪1547. 蛛1548. 踢1549. 践1550. 跑1551. 距1552. 跌1553. 跃1554. 趵1555. 跳1556. 趴1558. 跪1559. 路1560. 跟1561. 跛1562. 跳1563. 跟1564. 辗1565. 辉1566. 辞1567. 辩1568. 辆1569. 边1570. 辗1571. 连1572. 辞1573. 辜1574. 辛1575. 辞1576. 辣1577. 辨1578. 甜1579. 秎1580. 郎1581. 甜1582. 男1583. 酒1585. 雄1586. 配1587. 独1588. 狠1589. 狂1590. 牛1591. 祭1592. 牛1593. 特1594. 牛1595. 犁1596. 牢1597. 猜1598. 猛1599. 猪1600. 猫这里是2000个简单的中文字，它们从各个方面涵盖了中文的常见字汇。
515说明
目录章节1.0 产品介绍1.1 说明1.2 技术规范2.0 安装2.1 开箱检查2.2 安装装配件2.3 各种管道的装配件2.3.1 PVC和CPVC管件2.3.2 不锈钢、镀锌和黄铜管件2.3.3 焊接管件2.4 流量传感器的安装3.0 运行原理4.0 故障查寻5.0 维护和维修6.0 附录6.1 备件清单6.2 可选附件/替换部件6.3 保证7.0 手册变化信息1.0产品介绍这本手册包括了Signet 515流量传感器、转换器的安装和运行说明、技术规范和指导。
请通读这本说明书，它将回答你关于这些传感器、转换器的几乎所有问题。
如果你需要更进一步的资料，请与你的Signet供货商联系。
1.1说明Signet浆轮式流量计和相应的Signet指示仪器用来测量管道中液体的流速。
流量传感器做得很坚固，并且水头损失很小。
它可以很容易地拆下来检查和清洗。
要使515能够正确运行，必须安装在Signet装配件上。
515需要安装在MK316装配件或MK319‘Wet-Tap’组件上。
当流量传感器被拆下来时，每一个Signet装配件都提供了一个塞子，用来封住装配件。
515有玻璃纤维增强的聚丙烯或PVDF（聚偏二氟乙烯）两种外壳，可供选择。
流量传感器的防泄漏是由两个可以很容易更换的标准的氟橡胶O型圈组成的（见图1）。
作为特殊场合，可以提供高度稳定的耐腐蚀的Kalrez O型圈。
参见6.1节（备件清单）。
浆轮包括4个用超声波焊接进PVDF叶片内的永久磁铁。
515有九种型号以适应不同的管道尺寸及应用（见表1）。
515聚丙烯的-PO，-P1，-P2型号用于标准应用。
PVDF -VO，-V1，-V2型号用于恶劣的场合。
所有515流量传感器的加长部分都是由CPVC制成的（氯化聚氯乙烯）。
-P3，-P4，-P5聚丙烯特殊加长型是与MK319‘Wet Tap’一起使用的（见表2）。
‘Wet Tap’是传感器和Signet装配件之间的接口（在线拆装隔阀）。
大连公交
大连公交大连公交大连公交，全称为大连市公共交通。
主要由公交车、有轨电车、无轨电车、快轨、地铁组成。
大连市地处辽南丘陵地带，市内地形较崎岖风力大，不适于自行车使用，因此自行车的使用不像其他中国城市一样普及，而城市公共交通比较发达。
中文名大连公交外文名Dalian Bus 组成公交车、电车、轨道交通组成目录1 运营状况2 票价3 公交乘车卡4 车辆空调车双层巴士5 运营单位6 公交线路普通公共汽车空调公交车小公共汽车有轨电车无轨电车公交化线路（带路号）公交化客运线路（无路号）社区巴士地铁巴士7 快速公交8区县公交9 轨道交通运营状况现运营状况良好，但在高峰期间或路况拥堵的情况下也有车隔太长的情况，但一般不会超过半小时。
票价大连公交现全部采用无人售票，前门上车、后门下车，上车时投币，不设找零，有轨电车和铰接无轨电车因车辆设计原因而设有监票员，但只监督乘客投币刷卡，不负责售票。
BRT需乘客在进站时投币或刷卡，同电车一样设监票员。
快轨3号线同地铁需购买单程票或刷明珠卡。
大部分线路全程单一票价1元人民币，极少数线路为2元或以上。
公交集团线路除201路外全部实行单一票价制，其他客运公司的2元及以上线路则采取分段点计价，即线路确定某一固定站点，不跨段的乘客只支付本段票价，而跨段乘客则需支付全程票价(详见下段)。
分段计费的线路:(拿大黑石-建设街打比方)大黑石宾馆-辛寨子广场段内:正常上下车;辛寨子广场站:前门不开，后门上下车;辛寨子广场-建设街(火车站大菜市)跨段后后门上车，前门下车，下车时，在前门投币或刷卡。
其他线路同理(大连火车站夏家河子除外)票价2元的线路（有线路号、属于大连公交客运集团有限公司）有503路、514路、523路、528路、542路、201路、901路、905路、906路、907路、908路、909路、931路、932路、933路。
票价20元的线路仅有一条，即旅游环路，在火车站买票，一天内可重复乘坐，但是到达火车站之后，此票作废。
史上最全牛津深圳版初中英语八年级单词表(中英文对照)
牛津初中英语八年级单词表8A Chapter1466 liquid 液体467 solid 固体468 gas 气体469 cover 覆盖470 stream 小溪471 tap 龙头472 pour 涌流,倾泻473 freeze 惊呆,吓呆474 waste 浪费475 sound 听起来,似乎476 angry 生气的477 obey 遵守478 nod 点头479 reservoir 水库480 treatment 处理481 works 工厂482 travel 旅游483 pipe 水管,管子484 until 直到485 sewage 污水486 plant 工厂487 pump 用泵输送488 pollute 污染489 valuable 有价值的490 mint 铸币厂491 shiny 光亮的。
锃亮的492 customer 客户,顾客493 ordinary 普通的494 owner 物主495 total 总共496 flow chart 流程图497 step-by-step 循序渐进的498 clean up 打扫干净499 in the first place 起初500 bath 洗澡Chapter2501 local 当地的,本地的502 term 学期503 publish 出版。
发行504 hold 举行505 elect 选举506 chief editor 主编507 suggest 建议508 experience 经验,经历509 vote 投票510 secretary 秘书511 section 节,段512 free 空闲的,免费的513 consider 考虑514 briefly 简要地515 conclude 结束516 mayor 市长517 march 齐步走,行进518 form 排列成519 stall 摊位520 jar 罐子521 compliment 赞美522 sympathy 同情,同情心523 praise 表扬524 deserve 应受,应得525 shame 可惜526 absent 不在场的,缺席的527 match 比赛,竞赛528 teenage 十三到十九的青少年529 design 设计530 feature 特写或专题节目531 committee 委员会532 edition 版次533 pleased 高兴的,满意的534 take charge of负责,管理535 ask for 要求,请求536 be responsible for 对…负责537 talk over 商量,讨论538 pay for 付款539 in one week's time一周以后Chapter3541 innocent 无辜的,无罪的542 detective 侦探543 guilty 犯罪的544 recent 最近的545 case 案件546 alone 独自,单独547 lock 锁,锁上548 safe 安全的549 clue 线索550 earring 耳环551 carpet 地毯552 question 问题,提问553 deny 否认554 necklace 项链555 proof 证据556 recognize 辩论出557 suspect 嫌疑犯558 admit 承认559 own 自己的560 insurance 保险561 jail 监狱562 bracelet 手镯563 ruby 红宝石564 emerald 绿宝石565 diamond 钻石566 string 线,绳子567 piece 一件568 separately 分别地569 crime 犯罪行为570 belt 皮带571 doorway 门口572 frightened 受惊吓的, 害怕的573 as well as 也574 no longer=not any longer不再575 instead of 代替576 behind bars 坐牢577 bump into 撞击Chapter4579 drive 驱动器580 monitor 显示器581 speaker 扬声器,喇叭582 keyboard 键盘583 mouse 鼠标584 CD-ROM 只读光盘585 DVD-ROM 数字只读光盘586 flash disk 闪存盘587 type 打字588 control 控制589 hide 隐藏590 tiny 极小的591 realize 意识到592 rarely 很少593 print 打印594 operate 操作595 railway 铁路596 judge 法官,审判597 raise 提出598 supply 供应599 order 订单600 company 公司601 reference 标识,编号602 ballpoint pen 圆珠笔603 price 价格604 medium 中等的605 quantity 数量606 opinion 意见607 disagree 不同意608 Cantonese 广东的609 hot 辣的610 smooth 柔和的611 speed 速度612 modern 现代的613 distance 距离614 hardly ever 几乎不615 be unaware of 没有意识到616 dependent on 依赖于617 for the time being 暂时618 in one's opinion 据某人的意见Chapter5620 pyramid 金字塔621 Stonehenge 巨石阵622 run 经营623 tale 故事624 rush 冲625 cry 喊,叫626 Troy 特洛伊城627 plain 平原628 Greek 希腊人629 capture 占领630 wooden 木头的631 main 主要的632 wheel 轮子633 order 命令634 Trojan 特洛伊人635 drag 拖,拉636 citizen 公民637 celebrate 庆祝638 joke 笑话639 stupid 愚蠢的640 square 广场641 giant 巨大的642 secretary 秘密的643 army 军队644 enter 进入645 seize 抓住646 handsome 好看的,英俊的647 god 神648 golden 金色的,金的649 sail 航行650 battle 战役651 pretend 假装652 historical 历史上的653 fictional 虚构的654 legend 传说655 Asia 亚洲656 bow 弓657 arrow 箭658 paint 涂659 except for 除…之外660 succeed in 成功661 take turns 依次Chapter6663 invisible 看不见的,无形的664 nest 窝,巢665 dolphin 海豚666 ghost 幽灵,鬼667 enclose 附上668 widely 广泛地669 female 雌性670 lay 下蛋,产卵671 visible 看得见的,明显的672 extremely 非常,极其673 fortunate 幸运的674 creature 生物675 fish tank 鱼缸676 satisfied 满意的677 completely 完全地678 complaint 抱怨679 pleasure 愉快,快乐680 nap 小睡,打盹681 closely 仔细地682 excitedly 兴奋地683 value 价值684 tail 尾巴685 flat 平坦的686 goldfish 金鱼687 cap 帽子688 type 类型689 unusual 不寻常的690 feature 特点691 fin 鳍692 complain 抱怨693 respond 回答694 pepper 灯笼椒695 receipt 收条,收据696 apology 道歉697 bug 虫子698 soya milk 豆浆699 carton 一纸盒700 awfully 非常,极其701 crossword puzzle 填字游戏702 review 评价703 plaza 广场704 rocket 火箭705 paints 颜料706 glue 胶水707 staff 工作人员708 make a living 谋生709 according to 根据…710 in no time 立即,马上711 sell out of卖完712 leave for 启程去…713 cross out 删掉714 on sale 出售的Chapter7716 cormorant 鸬鹚717 fisherman 渔夫718 elderly 年长的719 raft 木筏720 dive 潜水721 require 要求722 net 网723 fishing rod 钓鱼竿724 bamboo 竹子725 tie 系,栓726 swallow 吞下,咽下727 pole 杆,棒728 enable 使能够729 attract 吸引730 remove 移开731 rest 剩下部分732 divide 分,分配733 traditional传统的734 the Bund 上海外滩735 scissors 剪刀736 bench 长凳737 mention 提及,说起738 build 体型739 middle-aged 中年的740 plump 丰满的741 well built 体型匀称的742 slim 苗条的743 average 平均的744 curly 卷曲的745 straight 直的746 bald 秃头的747 beard 胡须748 moustache 胡子749 simple 简单的750 material 材料751 glutinous 粘的,胶质的752 flour 面粉753 tool 工具754 dough 生面团755 mixture 混合物756 studio 工作室757 disappear 消失758 sculptor 雕刻家759 up to 直到760 set off 出发761 cool down 冷却8BChapter1765 memory 记忆,储存766 article 文章767 mind 记忆力768 sensible 明智的,敏感的769 topic 主题770 short-term 短期的771 long-term 长期的772 injured 受伤的773 strange 陌生的774 smile 笑775 imagine 想像776 the Guinness Book of Record吉尼斯记录777 memorize 记忆778 spider 蜘蛛779 dramatic 戏剧性的780 death 死781 president 总统,校长782 item 条款,项目783 end 结束,末端784 vehicle 车辆785 cost 花费786 frame 框架787 sitting room 会客厅788 repair 修理789 excuse 借口,理由790 charity 慈善机构791 ATM machine 自动取款机792 note 字条,纸币793 wallet 钱包794 security guard安保795 amazed 使吃惊796 exactly 精确地797 millionaire 百万富翁798 go wrong 弄错799 for example 例如800 break down 抛锚,出现故障801 pay attention to 注意Chapter2 803 tough 艰苦的804 bad-tempered 脾气不好的805 comic book 连环漫画书806 popularity 流行807 history 历史808 MGM 米高梅(电影制片商)809 together 一起810 show 显示,出示811 success 成功812 instead 代替,相反813 around 四处,在周围814 though 虽然,尽管815 line 路线,队816 church 教堂817 smell 闻818 plastic 塑料的819 chief 主要的820 expression 表达821 pale 苍白的822 sly 狡猾的823 eyebrow 眉毛824 yawn 打哈欠825 storm 风暴826 life jacket 救生衣827 wave 波浪828 overturn 推翻829 wonder 奇迹830 get……into trouble陷入困境831 in total总共832 be in trouble with 处于困境中833 come to life 苏醒过来834 play a trick on sb捉弄某人Chapter3 836 consumer 消费者837 lifeless 无生命的838 greenhouse 温室839 greenhouse effect 温室效应840 absorb 吸收841 environment 环境842 atmosphere 大气843 act 表演844 sunlight 阳光845 warmth 温暖846 heat 热度847 cause 原因848 level 水平849 drown 淹没850 destruction 破坏851 rainforest 热带雨林852 flood 洪水853 habit 习惯854 create 创造855 reach 到达856 environmentally friendly保护生态环境的857 leaflet 传单858 countryside 乡下859 site 地点,位置860 result 结果861 preference 偏爱,倾向862 prefer 更喜欢863 choice 选择864 pop 流行的865 classical 古典的866 comedy 喜剧性867 director 主管868 protection 保护869 bureau 局,处870 solve 解决871 state 情形872 inform 通知873 grateful 感谢的874 mountains of 象山一样的875 in the form of 以…的形式876 all the way 自始自终877 take action 行动Chapter4879 the White House 白宫880 organization 组织881 trip 旅行882 educational 有教育的883 thought 思想884 American Field Service外勤服务885 exchange 交换886 host 主持,主人887 Auckland 奥克兰888 confident 自信的889 World Vision 世界明宣会890 aim 目标891 deeply 深深地892 move 移动893 dump 倾倒894 government 政府895 improve 改善896 situation 情况,形式897 although 尽管898 scholarship 奖学金899 airlines 航线900 sightseeing 风景901 tour 旅游902 Kyoto 京都(日本城市) 903 information 信息904 the British Council 英国文化委员会905 flight 班机906 detail细节907 departure 离开908 arrival 到达909 member 成员910 steam 蒸汽,蒸汽的911 view 视野912 passport 护照913 Singapore 新加坡914 square 正方形,广场915 size 尺寸916 climate 气候917 geography 地理918 sincerely 真诚地919 keep in touch 保持联系920 in case 万一921 look forward to 期待Chapter5923 actor 演员924 Olympic 奥林匹克925 the Olympic Games 奥林匹克运动会926 prodigy 奇观927 pianist 钢琴家928 The New York Times 纽约时报 929 stunning 使人晕倒的 930 Western 西方的 931 strict 严格的932 while 当。
高标准农田统一上图入库及数据质量检查软件用户手册-20191031
高标准农田统一上图入库及数据质量检查软件操作手册北京数慧时空信息技术有限公司2019年9月目录1工作目的 (1)1.1编制目的 (1)1.2编制依据 (1)2软件说明 (1)3运行环境说明 (2)3.1硬件环境 (2)3.2软件环境 (2)4软件安装与卸载 (2)4.1软件安装顺序及问题 (2)4.2软件安装 (3)4.3软件卸载 (6)5软件功能介绍 (9)6软件工作流程说明 (26)6.1项目信息制作流程 (27)6.1.1选择默认行政区 (27)6.1.2新建项目库、导入工作底图 (28)6.1.3选择项目类型 (39)6.1.4填写/修改表单数据 (43)6.1.5标绘项目区范围 (45)6.1.6标绘高标准农田建设范围 (57)6.1.7其他方式确定项目区范围与高标准农田范围 (57)6.1.8制作/修改拐点坐标 (60)6.1.9审核检查确认成果 (61)6.1.10查看质检结果 (63)6.1.11统一汇交数据成果 (65)6.2其他功能 (70)6.2.1统计分析 (70)6.2.2空间分析 (71)6.2.3系统设置 (75)按照党中央、国务院关于高标准农田建设统一上图入库要求，为顺利开展“十二五”以来建成高标准农田评估工作，依据《全国高标准农田建设总体规划》、《高标准农田建设通则》等有关规定，与自然资源遥感监测“一张图”、高标准农田建设信息化监管系统相关技术要求及各有关部门业务管理充分衔接，特制定本指南。
1 工作目的1.1编制目的本手册面向对象为高标准农田统一上图入库及数据质量检查软件的使用者，通过此操作手册的学习，能够详细了解软件的功能，迅速掌握软件的使用方法，方便用户快速上手软件操作，实现高标准农田项目上图工作。
1.2编制依据主要依据如下标准文件和规范性文件。
《地球空间数据交换格式》（GB/T 17798-1999）《土地基本术语》（GB/T 19231-2003）《土地利用现状分类》（GB/T 21010-2007）《高标准农田建设通则》（GB/T 30600-2014）《国土资源信息核心元数据标准》（TD/T 1016-2003）《耕地质量调查监测与评价办法》（农业部令2016年第2 号）《关于切实做好高标准农田建设统一上图入库工作的通知》（国土资发〔2017〕115号）《“十二五”以来建成高标准农田评估工作通知代拟稿》及附件2 软件说明通过高标准农田统一上图入库及数据质量检查软件，使用者能够实现高标准农田项目新建、数据导入、指标的填写与修改、图形标绘提取、数据质量检查、数据包输出等功能。
对硝基氯苯-危险化学品安全技术说明书中文MSDS文档16个部分(完整版)
化学品安全技术说明书对硝基氯苯第一部分化学品及企业标识化学品中文名：对硝基氯苯化学品英文名：4-nitrochlorobenzene；p-chloronitrobenzene供应商名称：哈尔滨****化工有限公司供应商地址：哈尔滨**区**路**号**室供应商电话：3426-58****69邮编：245**8供应商传真：3426-58****64电子邮件地址：8888**************产品推荐及限制用途：第二部分危险性概述紧急情况概述：吞咽会中毒，皮肤接触会中毒，吸入会中毒。
GHS危险性类别：急性毒性-经口-类别3*;急性毒性-经皮-类别3*;急性毒性-吸入-类别3*;生殖细胞致突变性-类别2;特异性靶器官毒性-反复接触-类别2*;危害水生环境-急性危害-类别2;危害水生环境-长期危害-类别2标签要素：象形图：警示词：危险危险信息：H301:吞咽会中毒H311:皮肤接触会中毒H331:吸入会中毒H341:怀疑可造成遗传性缺陷（如果最终证明没有其他接触途径会产生这一危害时，应说明其接触途径）H373:长时间或反复接触（如果可确证无其他接触途径引起该危害，说明接触途径）可能对器官造成伤害（如果已经知道，说明所受损害的器官）H411:对水生生物有毒并具有长期持续影响防范说明：预防措施：P264:作业后彻底清洗……。
P270:使用本产品时不要进食、饮水或吸烟。
P280:戴防护手套/穿防护服/戴防护眼罩/戴防护面具。
P261:避免吸入粉尘/烟/气体/烟雾/蒸气/喷雾。
P271:只能在室外或通风良好之处使用。
P201:使用前获特别指示。
P202:在明白所有安全防范措施之前请勿搬动。
P260:不要吸入粉尘/烟/气体/烟雾/蒸气/喷雾。
P273:避免释放到环境中。
应急响应：P301+P310:如误吞咽：立即呼叫解毒中心/医生。
P321:具体治疗(见本标签上的.....)。
P330:漱口。
P302+P352:如皮肤沾染：用大量肥皂和水清洗。
50S116T资料
SDRAM512K × 2 BANKS × 16 BITS SDRAM Table of Contents-1. GENERAL DESCRIPTION (3)2. FEATURES (3)3. AVAILABLE PART NUMBER (3)4. PIN CONFIGURATION (4)5. PIN DESCRIPTION (5)6. BLOCK DIAGRAM (6)7. FUNCTIONAL DESCRIPTION (7)Power-up and Initialization (7)Programming Mode Register (7)Bank Activate Command (7)Read and Write Access Modes (7)Burst Read Command (8)Burst Write Command (8)Read Interrupted by a Read (8)Read Interrupted by a Write (8)Write Interrupted by a Write (8)Write Interrupted by a Read (8)Burst Stop Command (8)Addressing Sequence of Sequential Mode (9)Addressing Sequence of Interleave Mode (9)Auto Precharge Command (10)Precharge Command (10)Self Refresh Command (10)Power-down Mode (10)No Operation Command (11)Deselect Command (11)Clock Suspend Mode (11)8. TABLE OF OPERATING MODES (12)9. ELECTRICAL CHARACTERISTICS (13)Absolute Maximum Ratings (13)Recommended DC Operating Conditions (13)Capacitance (13)* All specs and applications shown above subject to change without prior notice.SDRAMDC Characteristics (14)AC Characteristics (15)10. TIMING WAVEFORMS (17)Command Input Timing (17)Read Timing (18)Control Timing of Input/Output Data (19)Mode Reqister Set Cycle (20)11. OPERATING TIMING EXAMPLE (21)Interleaved Bank Read (Burst Length = 4, CAS Latency = 3) (21)Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto Precharge) (22)Interleaved Bank Read (Burst Length = 8, CAS Latency = 3) (23)Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto Precharge) (24)Interleaved Bank Write (Burst Length = 8) (25)Interleaved Bank Write (Burst Length = 8, Auto Precharge) (26)Page Mode Read (Burst Length = 4, CAS Latency = 3) (27)Page Mode Read/Write (Burst Length = 8, CAS Latency = 3) (28)Auto Precharge Read (Burst Length = 4, CAS Latency = 3) (29)Auto Precharge Write (Burst Length = 4) (30)Auto Refresh Cycle (31)Self Refresh Cycle (32)Bust Read and Single Write (Burst Lenght = 4, CAS Latency = 3) (33)Power-down Mode (34)Auto Precharge Timing (Read Cycle) (35)Auto Precharge Timing (Write Cycle) (36)Timing Chart of Write-to-Read Cycle (In the case of Burst Length = 4) (37)Timing Chart of Burst Stop Cycle (Burst Stop Command) (37)Timing Chart of Burst Stop Cycle (Prechare Command) (38)CKE/DQM Input Timing (Write Cycle) (39)CKE/DQM Input Timing (Read Cycle) (40)Self Refresh/Power-down Mode Exit Timing (41)12. PACKAGE DIMENSIONS (42)50L-TSOP (II) 400 mill (42)* All specs and applications shown above subject to change without prior notice.* All specs and applications shown above subject to change without prior notice.SDRAM1. GENERAL DESCRIPTION50S116T is a high-speed synchronous dynamic random access memory (SDRAM), organized as512K words × 2 banks × 16 bits. Using pipelined architecture 50S116T delivers a data bandwidth of up to 400M bytes per second (-5). For different applications the 50S116T issorted into the following speed grades: -5, -6, -7. The -5 parts can run up to 200MHz/CL3.The -6 parts can run up to 166 MHz/CL3. The -7 parts can run up to 143 MHz/CL3. For handheld device application .Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time. By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. 50S116T is ideal for main memory in high performance applications.3. AVAILABLE PART NUMBERPART NUMBERSPEED (CL = 3 )SELF REFRESH CURRENT(MAX.)50S116T -5 200 MHz 1 mA 50S116T -6 166 MHz 1 mA 50S116T -7 143 MHz 1 mA• CAS latency: 2 and 3• Burst Length: 1, 2, 4, 8, and full page • Burst read, Single Write Mode• Byte data controlled by UDQM and LDQM • Auto precharge and controlled precharge • 4K refresh cycles/64 mS • Interface: LVTTL• Packaged in 50-pin, 400 mil TSOP II2. FEATURES• 3.3V ±0.3V power supply • Up to 200 MHz clock frequency• 524,288 words x 2 banks x 16 bits organizationSDRAM 4. PIN CONFIGURATION* All specs and applications shown above subject to change without prior notice.SDRAM 5. PIN DESCRIPTION* All specs and applications shown above subject to change without prior notice.SDRAM 6. BLOCK DIAGRAM* All specs and applications shown above subject to change without prior notice.SDRAM7. FUNCTIONAL DESCRIPTIONPower-up and InitializationThe default power-up state of the mode register is unspecified. The following power-up and initialization sequence need to be followed to guarantee the device being preconditioned to each user specific needs during power-up, all V CC and V CC Q pins must be ramp up simultaneously to the specified voltage when the input signals are held in the "NOP" state. The power-up voltage must not exceed V CC +0.3V on any of the input pins or V CC supplies. After power-up, an initial pause of 200 µSis required followed by a precharge of all banks using the precharge command. To prevent data contention on the DQ bus during power-up, it is required that the DQM and CKE pins be held high during the initial pause period. Once all banks have been precharged, the Mode Register Set Command must be issued to initialize the Mode Register. An additional eight Auto Refresh cycles (CBR) are also required before or after programming the Mode Register to ensure proper subsequent operation.Programming Mode RegisterAfter initial power-up, the Mode Register Set Command must be issued for proper device operation. All banks must be in a precharged state and CKE must be high at least one cycle before the Mode Register Set Command can be issued. The Mode Register Set Command is activated by the low signals of RAS, CAS, CS and WE at the positive edge of the clock. The address input data during this cycle defines the parameters to be set as shown in the Mode Register Operation table. A new command may be issued following the mode register set command once a delay equal to t RSC has elapsed. Please refer to the next page for Mode Register Set Cycle and Operation Table.Bank Activate CommandThe Bank Activate command must be applied before any Read or Write operation can be executed. The operation is similar to RAS activate in EDO DRAM. The delay from when the Bank Activate command is applied to when the first read or write operation can begin must not be less than the RASto CAS delay time (t RCD). Once a bank has been activated it must be precharged before another Bank Activate command can be issued to the same bank. The minimum time interval between successive Bank Activate commands to the same bank is determined by the RAS cycle time of the device (t RC). The minimum time interval between interleaved Bank Activate commands (Bank A to Bank B and vice versa) is the Bank-to-Bank delay time (t RRD). The maximum time that each bank can be held active is specified as t RAS(max.).Read and Write Access ModesAfter a bank has been activated, a read or write cycle can be followed. This is accomplished by setting RAS high and CAS low at the clock rising edge after minimum of t RCD delay. WE pin voltage level defines whether the access cycle is a read operation (WE high), or a write operation (WE low). The address inputs determine the starting column address. Reading or writing to a different row within an activated bank requires the bank be precharged and a new Bank Activate command be issued. When more than one bank is activated, interleaved bank Read or Write operations are possible. By using the programmed burst length and alternating the access and precharge operations between multiple banks, seamless data access operation among many different pages can be realized. Read or Write Commands can also be issued to the same bank or between active banks on every clock cycle.* All specs and applications shown above subject to change without prior notice.SDRAMBurst Read CommandThe Burst Read command is initiated by applying logic low level to CS and CAS while holding RAS and WE high at the rising edge of the clock. The address inputs determine the starting column address for the burst. The Mode Register sets type of burst (sequential or interleave) and the burst length (1, 2, 4, 8, full page) during the Mode Register Set Up cycle. Table 1 and 2 in the next page explain the address sequence of interleave mode and sequence mode.Burst Write CommandThe Burst Write command is initiated by applying logic low level to CS, CAS and WE while holding RAS high at the rising edge of the clock. The address inputs determine the starting column address. Data for the first burst write cycle must be applied on the DQ pins on the same clock cycle that the Write Command is issued. The remaining data inputs must be supplied on each subsequent rising clock edge until the burst length is completed. Data supplied to the DQ pins after burst finisheswill be ignored.Read Interrupted by a ReadA Burst Read may be interrupted by another Read Command. When the previous burst is interrupted,the remaining addresses are overridden by the new read address with the full burst length. The data from the first Read Command continues to appear on the outputs until the CAS latency from the interrupting Read Command the is satisfied.Read Interrupted by a WriteTo interrupt a burst read with a Write Command, DQM may be needed to place the DQs (output drivers) in a high impedance state to avoid data contention on the DQ bus. If a Read Command will issue data on the first and second clocks cycles of the write operation, DQM is needed to insure the DQs are tri-stated. After that point the Write Command will have control of the DQ bus and DQM masking is no longer needed.Write Interrupted by a WriteA burst write may be interrupted before completion of the burst by another Write Command. When the previous burst is interrupted, the remaining addresses are overridden by the new address and data willbe written into the device until the programmed burst length is satisfied.Write Interrupted by a ReadA Read Command will interrupt a burst write operation on the same clock cycle that the Read Command is activated. The DQs must be in the high impedance state at least one cycle before the new read data appears on the outputs to avoid data contention. When the Read Command is activated, any residual data from the burst write cycle will be ignored.Burst Stop CommandA Burst Stop Command may be used to terminate the existing burst operation but leave the bank openfor future Read or Write Commands to the same page of the active bank, if the burst length is full page. Use of the Burst Stop Command during other burst length operations is illegal. The Burst Stop Command is defined by having RAS and CAS high with CS and WE low at the rising* All specs and applications shown above subject to change without prior notice.* All specs and applications shown above subject to change without prior notice.SDRAMedge of the clock. The data DQs go to a high impedance state after a delay, which is equal to the CAS Latency in a burst read cycle, interrupted by Burst Stop. If a Burst Stop Command is issued during a full page burst write operation, then any residual data from the burst write cycle will be ignored.Addressing Sequence of Sequential ModeA column access is performed by increasing the address from the column address, which is input to the device. The disturb address is varied by the Burst Length as shown in Table 1. Table 1 Address Sequence of Sequential ModeAddressing Sequence of Interleave ModeA column access is started in the input column address and is performed by inverting the address bit in the sequence shown in Table 2.Table 2 Address Sequence of Interleave ModeSDRAMAuto Precharge CommandIf A10 is set to high when the Read or Write Command is issued, then the auto precharge function is entered. During auto precharge, a Read Command will execute as normal with the exception that the active bank will begin to precharge automatically before all burst read cycles have been completed. Regardless of burst length, it will begin a certain number of clocks prior to the end of the scheduled burst cycle. The number of clocks is determined by CAS latency.A Read or Write Command with auto precharge can not be interrupted before the entire burst operation is completed. Therefore, use of a Read, Write, or Precharge Command is prohibited during a read or write cycle with auto precharge. Once the precharge operation has started, the bank cannot be reactivated until the Precharge time (t RP) has been satisfied. Issue of Auto Precharge command is illegal if the burst is set to full page length. If A10 is high when a Write Command is issued, the Write with Auto Precharge function is initiated. The SDRAM automatically enters the precharge operation one clock delay from the last burst write cycle. This delay is referred to as Write t WR. The bank undergoing auto precharge can not be reactivated until t WR and t RP are satisfied. This is referred to ast DAL, Data-in to Active delay (t DAL = t WR + t RP). When using the Auto precharge Command, the interval between the Bank Activate Command and the beginning of the internal precharge operation must satisfy t RAS(min).Precharge CommandThe Precharge Command is used to precharge or close a bank that has been activated. The Precharge Command is entered when CS, RAS and WE are low and CAS is high at the rising edge of the clock. The Precharge Command can be used to precharge each bank separately orall banks simultaneously. The address bits, A10, and BA, are used to define which bank(s) is to be precharged when the command is issued. After the Precharge Command is issued, the precharged bank must be reactivated before a new read or write access can be executed. The delay between the Precharge Command and the Activate Command must be greater than or equal to the Precharge time(t RP).Self Refresh CommandThe Self Refresh Command is defined by having CS, RAS, CAS and CKE held low with WEhigh at the rising edge of the clock. All banks must be idle prior to issuing the Self Refresh Command. Once the command is registered, CKE must be held low to keep the device in Self Refresh mode. When the SDRAM has entered Self Refresh mode all of the external control signals, except CKE, are disabled. The clock is internally disabled during Self Refresh Operation to save power. The device will exit Self Refresh operation after CKE is returned high. Any subsequent commands can be issued aftert RC from the end of Self Refresh command.If, during normal operation, Auto Refresh cycles are issued in bursts (as opposed to being evenly distributed), a burst of 4,096 Auto Refresh cycles should be completed just prior to entering and just after exiting the Self Refresh mode.Power-down ModeThe Power-down mode is initiated by holding CKE low. All of the receiver circuits except CKE are gated off to reduce the power. The Power-down mode does not perform any refresh operations; therefore the device can not remain in Power-down mode longer than the Refresh period (t REF) of the device.* All specs and applications shown above subject to change without prior notice.SDRAM The Power-down mode is exited by bringing CKE high. When CKE goes high, a No Operation Command is required on the next rising clock edge, depending on t CK. The input buffers need to be enabled with CKE held high for a period equal to t CKS(min) + t CK(min).No Operation CommandThe No Operation Command should be used in cases when the SDRAM is in an idle or a wait state to prevent the SDRAM from registering any unwanted commands between operations. A No Operation Command is registered when CS is low with RAS, CAS, and WE held high at the rising edge of the clock. A No Operation Command will not terminate a previous operation that is still executing, such as a burst read or write cycle.Deselect CommandThe Deselect Command performs the same function as a No Operation Command. Deselect Command occurs when CS is brought high, the RAS, CAS, and WE signals become don't cares.Clock Suspend ModeDuring normal access mode, CKE must be held high enabling the clock. When CKE is registered low while at least one of the banks is active, Clock Suspend Mode is entered. The Clock Suspend mode deactivates the internal clock and suspends any clocked operation that was currently being executed. There is a one-clock delay between the registration of CKE low and the time at which the SDRAM operation suspends. While in Clock Suspend mode, the SDRAM ignores any new commands that are issued. The Clock Suspend mode is exited by bringing CKE high. There is a one-clock cycle delay from when CKE returns high to when Clock Suspend mode is exited.* All specs and applications shown above subject to change without prior notice.SDRAM8. TABLE OF OPERATING MODESFully synchronous operations are performed to latch the commands at the positive edges of CLK. Table 3 shows the truth table for the operation commands.Table 3 Truth Table (Note 1, 2)Notes:(1) V = Valid, X = Don't care, L = Low Level, H = High Level(2) CKEn signal is input level when commands are provided.(3) These are state of bank designated by BA signals.(4) Device state is full page burst operation.(5) Power-down Mode can not be entered in the burst cycle.When this command asserts in the burst cycle, device state is clock suspend mode.* All specs and applications shown above subject to change without prior notice.* All specs and applications shown above subject to change without prior notice.SDRAM9. ELECTRICAL CHARACTERISTICSAbsolute Maximum RatingsPARAMETERSYMBOL RATING UNIT NOTE Input, Output Voltage V IN , V OUT -0.3 − 4.6 V 1 Power Supply Voltage V CC , V CC Q -0.3 − 4.6 V 1 Operating Temperature T OPR 0 − 70 °C 1 Storage Temperature T STG -55 − 125 °C 1Soldering Temperature (10s) T SOLDER 260 °C 1 Power DissipationP D 1 W 1 Short Circuit Output CurrentI OUT50mA1Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliabilityof the device.Recommended DC Operating Conditions(T A = 0 to 70°C)PARAMETERSYM. MIN. TYP. MAX. UNIT NOTE Power Supply VoltageV CC 3.0 3.3 3.6 V 2 Power Supply Voltage (for I/O Buffer) V CC Q 3.0 3.3 3.6 V 2 Input High Voltage V IH 2.0 - V CC +0.3 V2 Input Low VoltageV IL-0.3-0.8V2Note : V IH (max.) = V CC /V CC Q +1.2V for pulse width < 5 nSV IL (min.) = V SS /V SS Q -1.2V for pulse width < 5 nSCapacitanceCC A Note: These parameters are periodically sampled and not 100% testedSDRAMDC Characteristics(V CC = 3.3V ±0.3V, T A = 0°~70°C)PARAMETER SYM. MIN. MAX. UNIT NOTESLVTTL OutputT ″H″ Level Voltage(I OUT = -2 mA)V OH 2.4 - VLVTTL Output ″L″ Level Voltage (I OUT = 2 mA) V OL - 0.4 VInput Leakage Current(0V ≤ V IN≤ V CC, all other pins not under test = 0V)I I-10 10µAOutput Leakage Current(Output disable , 0V ≤ V OUT≤ V CC Q )I O-10 10µA* All specs and applications shown above subject to change without prior notice.SDRAMAC Characteristics(V CC= 3.3V ±0.3V, V SS= 0V, T A = 0 to 70 °C, Notes: 5, 6, 7, 8)PARAMETER SYM. -5 -6 -7 UNITMIN. MAX. MIN. MAX. MIN. MAX.Ref/Active to Ref/Active Command Period t RC 54 60 65 nS Active to Precharge Command Period t RAS 40 100000 42 100000 45 100000Active to Read/Write Command Delay Time t RCD 15 18 20 Read/Write(a) to Read/Write(b)Commandt CCD 1 1 1 Cycle PeriodPrecharge to Active(b) Command Period t RP 15 18 20 nS Active(a) to Active(b) Command Period t RPD 10 12 14Write Recovery Time CL* = 2 t WR 7 8 10CL* = 3 5 6 7 CLK Cycle Time CL* = 2 t CK 7 1000 8 1000 10 1000CL* = 3 5 1000 6 1000 7 1000 CLK High Level Width t CH 2 2 2.5CLK Low Level Width t CL 2 2 2.5Access Time from CLK CL* = 2 t AC 5.5 66.5 CL* = 3 4.5 5 5.5Output Data Hold Time t OH 1.8 2 2.5 Output Data High Impedance Time t HZ 1.5 5 2 6 2.5 7Output Data Low Impedance Time t LZ 111Power-down Mode Entry Time t SB 1 5 1 6 1 7 Transition Time of CLK (Rise and Fall) t T 0.5 10 0.5 10 0.5 10Data-in-Set-up Time t DS 1.5 1.5 1.5Data-in Hold Time t DH 1 1 1Address Set-up Time t AS 1.5 1.5 1.5Address Hold Time t AH 1 1 1CKE Set-up Time t CKS 1.5 1.5 1.5CKE Hold Time t CKH 1 1 1Command Set-up Time t CMS 1.5 1.5 1.5Command Hold Time t CMH 1 1 1Refresh Time t REF 64 64 64 mS Mode Register Set Cycle Time t RSC 10 12 14 nS* All specs and applications shown above subject to change without prior notice.* All specs and applications shown above subject to change without prior notice.SDRAMNotes:1. Operation exceeds "ABSOLUTE MAXIMUM RATING" may cause permanent damage to the devices.2. All voltages are referenced to V SS3. These parameters depend on the cycle rate and listed values are measured at a cycle rate with the minimum values of t CK and t RC .4. These parameters depend on the output loading conditions. Specified values are obtained with output open.5. Power-up sequence is further described in the "Functional Description" section.6. AC test conditions.PARAMETERCONDITIONS Output Reference Level 1.4V/1.4V Output Load See diagram belowInput Signal Levels2.4V/0.4V Transition Time (Rise and Fall) of Input Signal 2 nS Input Reference Level1.4V7. Transition times are measured between V IH and V IL .8. t HZ defines the time at which the outputs achieve the open circuit condition and is not referenced tooutput level.* All specs and applications shown above subject to change without prior notice.SDRAM10. TIMING WAVEFORMSCommand Input TimingSDRAMTiming Waveforms, continuedRead Timing* All specs and applications shown above subject to change without prior notice.SDRAMTiming Waveforms, continuedControl Timing of Input/Output Data* All specs and applications shown above subject to change without prior notice.SDRAMTiming Waveforms, continuedMode Reqister Set Cycle* All specs and applications shown above subject to change without prior notice.11. OPERATING TIMING EXAMPLEInterleaved Bank Read (Burst Length = 4, CAS Latency = 3)t RCt RCt RCt RCt RASt RP t RASt RCDt RCDt RRDRAaRBd* All specs and applications shown above subject to change without prior notice. 1F-5 NO.66 SEC.2 NAN-KAN RD ., LUCHU , TAOYUAN, TAIWAN, R.O.C Email: server@50S116T SDRAMOperating Timing Example, continuedInterleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto Precharge)(CLK = 100 MHz)CLKCSt RC t RCt RCRASCASWEBAt RCDA10A0-A9DQMCKEt RRD t RRDOperating Timing Example, continuedInterleaved Bank Read (Burst Length = 8, CAS Latency = 3)t RC t RCt RCt RASOperating Timing Example, continuedInterleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto Precharge)t RCt RASt RP* All specs and applications shown above subject to change without prior notice. 50S116TSDRAMOperating Timing Example, continuedInterleaved Bank Write (Burst Length = 8)t RCt RASOperating Timing Example, continuedInterleaved Bank Write (Burst Length = 8, Auto Precharge)Bank #0 Bank #1t RCt RAS t RPOperating Timing Example, continuedPage Mode Read (Burst Length = 4, CAS Latency = 3)t RASt RASRAa* All specs and applications shown above subject to change without prior notice. 50S116TSDRAMOperating Timing Example, continuedPage Mode Read/Write (Burst Length = 8, CAS Latency = 3)t RAS RAa* All specs and applications shown above subject to change without prior notice. 1F-5 NO.66 SEC.2 NAN-KAN RD ., LUCHU , TAOYUAN, TAIWAN, R.O.C Email: server@ 50S116TSDRAMSDRAM Operating Timing Example, continuedAuto Precharge Read (Burst Length = 4, CAS Latency = 3)t RCt RAS t RP* All specs and applications shown above subject to change without prior notice.SDRAM Operating Timing Example, continuedAuto Precharge Write (Burst Length = 4)t RCt RAS* All specs and applications shown above subject to change without prior notice.Operating Timing Example, continued Auto Refresh Cycle(CLK = 100 MHz)All BanksPrechageAutoRefreshAuto Refresh (Arbitrary Cycle)t RCt RPOperating Timing Example, continued Self Refresh Cycle(CLK = 100 MHz)t SBSDRAM Operating Timing Example, continuedBust Read and Single Write (Burst Lenght = 4, CAS Latency = 3)t RCD* All specs and applications shown above subject to change without prior notice.1F-5 NO.66 SEC.2 NAN-KAN RD ., LUCHU , TAOYUAN, TAIWAN, R.O.C Email: server@SDRAM Operating Timing Example, continuedPower-down Modet SB* All specs and applications shown above subject to change without prior notice.Operating Timing Example, continuedAuto Precharge Timing (Read Cycle)APAP ActActQ0Q6Q7t RP* All specs and applications shown above subject to change without prior notice. 1F-5 NO.66 SEC.2 NAN-KAN RD ., LUCHU , TAOYUAN, TAIWAN, R.O.C Email: server@ SDRAMOperating Timing Example, continuedAuto Precharge Timing (Write Cycle)1110987654321D3D7(2) CAS Latency = 3When the Auto precharge command is asserted, the period from Bank Activate command to the start of internal precgarging must be at least tRAS(min).represents the Write with Auto precharge command.represents the start of internal precharging.represents the Bank Activate command.Note:Operating Timing Example, continuedTiming Chart of Write-to-Read Cycle (In the case of Burst Length = 4)Timing Chart of Burst Stop Cycle (Burst Stop Command)* All specs and applications shown above subject to change without prior notice.1F-5 NO.66 SEC.2 NAN-KAN RD ., LUCHU , TAOYUAN, TAIWAN, R.O.C Email: server@ 50S116TSDRAMOperating Timing Example, continuedTiming Chart of Burst Stop Cycle (Prechare Command)(In the case of Burst Length = 8)1110987654321( a ) CAS latency = 2( b ) CAS latency = 3DQDQ(1) Read cycle(2) Write cycleCommadCommadPRCGD4( b ) CAS latency = 3DQ( a ) CAS latency = 2DQM DQM DQOperating Timing Example, continuedCKE/DQM Input Timing (Write Cycle)* All specs and applications shown above subject to change without prior notice. Email: server@ 50S116TSDRAMOperating Timing Example, continuedCKE/DQM Input Timing (Read Cycle)* All specs and applications shown above subject to change without prior notice. Email: server@ 50S116TSDRAMOperating Timing Example, continuedSelf Refresh/Power-down Mode Exit TimingAsynchronous ControlInput Buffer turn on time ( Power down mode exit time ) is specified by t CKS (min) + t CK (min)A ) t CK < t CKS (min)+t CK (min)B) t CK >= t CKS (min) + t CK (min)Note )All Input Buffer(Include CLK Buffer) are turned off in the Power Down modeand Self Refresh modeRepresents the No-Operation command Represents one command。
二十四史天象记录与陈垣历表的朔闰差异
二十四史天象记录与陈垣历表的朔闰差异刘次沅【摘要】All astronomical records in the dynastic Histories were checked and recomputed by modem astronomical method, and twenty-seven cases of discrepancies in calendar elements, the new-moon days and the intercalary months, were found compared with the famous Chinese historical calendar by Chen Yuan. It is important to collect such cases for reconstructing a true calendar, which was practically used in the Chinese history.%对二十四史及《清史稿》帝纪和天文志中的全部天象记录进行了整理和计算验证，发现其中历日朔闰与陈垣《二十史朔闰表》不合27例。
汇集这样的例证，对于恢复中国古代完整的实行历表，是至关重要的。
【期刊名称】《时间频率学报》【年(卷),期】2012(035)001【总页数】7页(P50-56)【关键词】古代天象记录;二十四史;历法;日历;朔闰;陈垣【作者】刘次沅【作者单位】中国科学院国家授时中心,西安710600【正文语种】中文【中图分类】P1-091.2中国古代特别重视历日的安排，现存最早的官方文献《尚书·尧典》，就以主要的篇幅论述观象授时，制定历法。
殷商甲骨文中，可以看出当时已有历法，实行阳历纪年、阴历纪月、干支纪日。
这一称为“阴阳历”的中国传统历法模式，一直沿用至今。
由于中国古代“天人合一”的思想，传统历法从基本概念上过分追求“合天”，导致历法过分复杂，难以满足要求，历代不断地改历，以至于历代实际行用的日历至今难以完全准确地恢复。
16S rDNA克隆文库方法分析太岁样品中细菌的多样性
16S rDNA克隆文库方法分析太岁样品中细菌的多样性王朝江【摘要】通过构建16S rDNA克隆文库的方法,分析太岁样品中细菌的群落结构及多样性.太岁样品中的细菌归属于4个门9个目,优势类群依次是芽胞杆菌目(Bacillales,33.01％)、柄杆菌目(Caulobacterales,32.04％)和伯克霍尔德氏菌目(Burkholderiales,12.62％);优势属为短波单胞菌属(Brevundimonas,30.10％)、葡萄球菌属(Staphylococcus,29.13％)和食酸菌属(Acidovorax,7.77％).并且其中的5个目中含有未培养的细菌,红杆菌目(Rhodobacterales)、伯克霍尔德氏菌目和红环菌目(Rhodocyclales)的11个克隆子的细菌16S rDNA序列同源性低于97％.研究表明太岁样品中细菌多样性较丰富,且蕴藏着许多未知的微生物资源.%The bacterial community structure and diversity of Taisui sample were analyzed through the construction of 16S rDNA clone libraries.Bacteria in Taisui sample belonged to 4 phyla and 9 orders.The dominant orders of bacteria were Bacillales (33.01％),Caulobacterales (32.04％) and Burkholderiales (12.62％).The most dominant genus was Brevundimonas (30.10％),the secondary dominant genus was Staphylococcus(29.13％),followed by Acidovorax (7.77％).There were uncultured bacteria of 5 orders among them,and 11 clones fromRhodobacterales,Burkholderiales and Rhodocyclales of bacterial 16S rDNA sequence homology were less than 97％.The results indicated that high bacterial diversity was found in Taisui,also there were many unknown microbial resources.【期刊名称】《微生物学杂志》【年(卷),期】2017(037)003【总页数】5页(P95-99)【关键词】16S rDNA;克隆文库;太岁;细菌多样性【作者】王朝江【作者单位】河北省农林科学院遗传生理研究所,河北石家庄050051【正文语种】中文【中图分类】Q938“太岁”又称“肉灵芝”，《本草纲目》中描述为“肉芝状如肉，乃生物也，白者如截肪，黄者如紫金，皆光明洞彻如坚冰也”。
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Dialight Corporation • 1501 Route 34 South • Farmingdale, NJ 07727 • TEL: (732) 919-3119 • FAX: (732) 751-5778 •
LED Data
For absolute maximum ratings and other electrical and optical data on the recommended LEDs, refer to LED data sheets.
Operating/Storage Temperature
–30°C to +100°C
Dialight Optopipe Light Pipe Description
This Optopipe’s® larger light emitting surface appears bright. It is reliably held in the panel by 3 press-fit splines. This Optopipe® functions as a through-the-case indicator with a textured finish on the light-emitting surface that increases its viewing angle. The light sources can be one of Dialight’s 597 Series SMT LEDs. The light source’s emitting surface should be located no more than 0.020" or 0.5mm from the Optopipe®. The light pipe material is water clear transmissive polycarbonate rated UL94-V0, and has a 35% oxygen index. Dialight can provide custom Optopipe® solutions for your applications.
RECOMMENDED PLACEMENT OF LED
Features
• • • • • High transmissivity polycarbonate material UL94V-0 compliance ESD protection (circuit isolation from front panel) Wide viewing angle Secures to panel by press-fit
Ø .94 [Ø .037] (MAJOR DIA)
.51 [.020] MAX DIRECTION OF LIGHT
LED alternatives may not produce optimum light output
Dimensions in mm [inches]
TO P SURFACE OF LED
PART NO. PAGE #
1-25 1-29 597-2x01-2xx 597-2xx1-4xx
R .0 5 [.002} MAX DIFFUSED FRONT SURFACE
60° REF (TYP)
Ø .84 [Ø .033]
1.22 [.048]
2.16 [.085] 4.14 [.163] Ø 1.63 [Ø .064]
元器件交易网
1.63mm Round ® Optopipe® Optical Light Pipe, Panel Mount
1.52 [.006] 45°
ቤተ መጻሕፍቲ ባይዱ
515-1016
Alternative MicroLED SMT LEDs for use with 515-1016