PVD Process Instruction
AboutPVDCoating（PVD电镀）
About PVD CoatingAbout PVD CoatingPhysical Vapor Deposition (PVD) is a process to produce a metal vapor that can be deposited on electrically conductive materials as a thin highly adhered pure metal or alloy coating. The process is carried out in a vacuum chamber at high vacuum (10-6 torr) using a cathodic arc source.物理气相沉淀（PVD)是一种产生能够在导电的材料上镀上一层附着性强的金属或合金薄膜的金属蒸汽的工艺。
这项工艺在一个有高真空度（10-6 torr）并使用阴极蒸发源的真空室中进行。
PVD EquipmentChoosing the right equipment was the single most important decision in guaranteeing the success of the operation. Our first system was built in the USA and operates a patented Low Temperature Arc Vapor Deposition (LTAVD) proces s. This leading vacuum system manufacturer has 22 US patents and over 25 years of experience.This highly sophisticated equipment provides precise process control and easy to use computer graphic interface. These systems have the largest coating zones cu rrently available in a batch coater so we can coat large complex shapes or large volumes of small components. The flexibility to coat a variety of substrate materials is extremely advantageous, particularly heat sensitive materials like plastic or zinc.片)感光底层在保证操作成功中最唯一重要的就是选择适当的设备。
半导体mfg生产制造中常用的英文单词
在半导体制造（Semiconductor Manufacturing）行业中，有许多专业术语和英文单词频繁出现，以下是一些常见的：1. Wafer - 晶圆，硅片2. Die - 芯片裸片3. Photolithography - 光刻技术4. Etching - 刻蚀5. Deposition - 沉积，包括物理气相沉积（PVD）、化学气相沉积（CVD）6. Ion Implantation - 离子注入7. Cleaning - 清洗8. Thermal Oxidation - 热氧化9. Diffusion - 扩散工艺10. Thin Film Transistor (TFT) - 薄膜晶体管11. Mask - 防护层、光罩12. Doping - 掺杂13. CMP (Chemical Mechanical Polishing) - 化学机械平坦化14. Sputtering - 溅射15. Bonding - 封装时的绑定过程16. Probe - 测试探针17. Final Test - 最终测试18. Packaging - 封装19. Silicon Wafer Fab - 晶圆厂20. Yield - 产出率，良率此外，还有许多与质量管理、设备维护、生产控制相关的词汇，例如：- Process Control - 工艺控制- Defect Inspection - 缺陷检测- Metrology - 测量科学- End-of-Line (EOL) Testing - 生产线末尾测试- Quality Assurance (QA) - 质量保证- Failure Analysis (FA) - 失效分析这些词汇共同构成了半导体制造行业的语言基础。
pvd溅射镀膜技术英语
pvd溅射镀膜技术英语Physical Vapor Deposition (PVD) Sputtering Coating Technology.Physical vapor deposition (PVD) sputtering is aversatile thin-film deposition technique that utilizes a physical process to transfer material from a target to a substrate. In PVD sputtering, the target material is bombarded with energetic ions, causing the target atoms to be ejected and deposited onto the substrate. This process enables the deposition of a wide range of materials, including metals, alloys, ceramics, and polymers, with precise control over film thickness, composition, and properties.Process Mechanism.The PVD sputtering process involves the following steps:1. Target Preparation: The target, which is the sourceof the deposited material, is typically a solid or powdered form of the desired material.2. Vacuum Chamber: The deposition process takes place in a vacuum chamber to minimize contamination and ensure a clean deposition environment.3. Plasma Generation: The vacuum chamber is filled with an inert gas, such as argon or nitrogen, which is ionized by an electrical discharge to create a plasma.4. Ion Bombardment: The ions in the plasma are accelerated towards the target, where they impact the surface and physically sputter the target atoms.5. Film Deposition: The sputtered atoms travel through the plasma and deposit onto the substrate, forming a thin film.Advantages of PVD Sputtering.PVD sputtering offers several advantages over otherthin-film deposition techniques:High Deposition Rates: PVD sputtering can achieve high deposition rates, allowing for rapid coating of large surfaces.Excellent Adhesion: The sputtered atoms have high kinetic energy, which promotes strong adhesion between the film and the substrate.Uniform Coatings: PVD sputtering produces uniform and conformal coatings, even on complex surfaces.Wide Material Compatibility: PVD sputtering is compatible with a wide range of materials, including metals, alloys, ceramics, and polymers.Precise Control: PVD sputtering allows for precise control over film thickness, composition, and properties by adjusting process parameters such as deposition time, power, and gas pressure.Applications of PVD Sputtering.PVD sputtering is used in a variety of applications, including:Hard Coatings: Wear-resistant, corrosion-resistant, and low-friction coatings for cutting tools, bearings, and medical devices.Optical Coatings: Anti-reflection coatings, reflective coatings, and filters for lenses, mirrors, and optical devices.Electronic Coatings: Conductive, insulating, and semiconducting coatings for microelectronics, solar cells, and displays.Biocompatible Coatings: Biocompatible coatings for medical implants, dental prosthetics, and drug delivery systems.Decorative Coatings: Decorative finishes for jewelry,home appliances, and automotive parts.Conclusion.Physical vapor deposition (PVD) sputtering is a widely used and versatile thin-film deposition technique that offers a range of advantages, including high deposition rates, excellent adhesion, uniform coatings, wide material compatibility, and precise control. PVD sputtering is used in diverse applications, from hard coatings and optical coatings to electronic coatings and biocompatible coatings.。
Integrated process design instruction
Computers and Chemical Engineering26(2002)295–306Integrated process design instructionD.R.Lewin a,*,W.D.Seider b,J.D.Seader ca Chemical Engineering Department,Technion,Israel Institute of Technology,Haifa32000,Israelb Chemical Engineering Department,Uni6ersity of Pennsyl6ania,Philadelphia,PA19104,USAc Chemical and Fuels Engineering Department,Uni6ersity of Utah,Salt Lake City,UT84112,USAReceived21August2000;received in revised form2January2001;accepted2January2001AbstractAs chemical engineering education moves into the new millennium,it is incumbent on educators to provide a modern curriculum for process design,yet mindful of the limited time for instruction that is available.This paper addresses three key components of a chemical engineering curriculum that prepare undergraduates to be effective process designers in industry:(a)a structured approach relying on fundamentals,integrated with instruction in the competent use of process simulators;(b)a balance between heuristic and algorithmic approaches;and(c)instruction in the integration of design and control.It is argued that these components should be included in an integrated fashion,with much of the material appearing gradually during the delivery of core courses,taking full advantage of computing capability and multimedia support for self-paced instruction.In this paper,each of the features is discussed in detail and demonstrated for the design of a typical process.©2002Elsevier Science Ltd.All rights reserved.Keywords:Process design instruction;Heuristic and algorithmic approaches;Chemical process simulators;Interaction of design and control; Multimedia and web-based instruction/locate/compchemeng1.IntroductionInstruction of chemical engineers should reflect the challenges they face in industry.Young chemical engi-neers are required to assimilate rapidly new and emerg-ing technologies to react in aflexible manner to shorter production cycles and strict quality regulations.They are expected to improve product quality while at the same time reduce operating costs and environmental impact,improve operability,minimize waste produc-tion,and eliminate possible hazards.It is incumbent on chemical engineering educators to provide a modern curriculum for process design instruction that addresses these needs while being mindful of the limited time available.Thefirst issue involves the concept of a structured core curriculum that focuses on fundamentals as a basis for design.Typically,design is taught in the senior year and involves the integration and assimilation of core course material as dictated by the needs of a design project.Section2describes how the core course se-quence has impact on the needs of instruction in design. Furthermore,we discuss the need for students to sup-port their developing knowledge of engineering funda-mentals in general,and more specifically their design activity,by mastering the use of a commercial simulator to a high level of competence.We suggest that adopting self-paced methods relying on multimedia tutorials, which assist the students in preparing simulations of processflowsheets,can support this effort.In the sec-ond issue,which is discussed in Section3,it is postu-lated that the teaching of design itself should strike a balance between heuristic and algorithmic approaches. While heuristics lay the foundations for acquiring the experience necessary to carry out practical process cre-ation and equipment design,the importance of the latter is to ensure the generation of optimal designs. The last issue is the importance of dealing with interac-tions between the design and control of chemical pro-cesses when learning to prepare process designs.In Section4,the current state of the art in the integration of process design and process control is reviewed with*Corresponding author.Tel.:+972-4-829-2006;fax:+972-4-823-0476;http://tx.technion.ac.il/ dlewin/pse.htm.E-mail address:dlewin@tx.technion.ac.il(D.R.Lewin).0098-1354/02/$-see front matter©2002Elsevier Science Ltd.All rights reserved. PII:S0098-1354(01)00747-5D.R.Lewin et al./Computers and Chemical Engineering26(2002)295–306 296particular emphasis on its impact on the education of undergraduates.Several textbooks are available to support a senior course in process design.The traditional textbooks focus on either hierarchical design relying on back-of-the-envelope calculations(Douglas,1988),or on de-tailed equipment design,costing,and economics (Ulrich,1984;Peters&Timmerhaus,1991).Of the more recent texts(Smith,1995;Woods,1995;Turton, Bailie,Whiting,&Shaeiwitz,1997;Biegler,Grossmann, &Westerberg,1997),only Seider,Seader,and Lewin (1999)additionally provide detailed support on the use of simulators,with an explicit treatment of the interac-tion of design and control.In this paper,it is an objective to discuss our view of several key aspects of how computer-aided process design can be taught to chemical engineering under-graduates.This topic has been treated previously by a number of chemical engineering educators,starting with Westerberg(1971),and with more recent treat-ments by Turton and Bailie(1992),Cameron,Douglas, and Lee(1994),Shaeiwitz,Whiting,and Velegol(1996), Bell(1996),Rockstraw,Eakman,Nabours,and Bellner (1997),Counce,Holmes,Edwards,Perilloux,and Reimer(1997).It is not intended in this article to provide a comprehensive coverage of instruction in process design with emphasis on the advantages and disadvantages of alternative approaches.Rather,it is our purpose to extend some old ideas and introduce some new ones that we have tested with our students.2.A structured approach relying on fundamentals Before discussing the building blocks that are an integral part of the toolbox of a process designer,a brief mention of the educational approach that we advocate is in order.We thereforefirst discuss the particular skills that need to be fostered,and the frame of reference used to define goals for the student, couched in terms of educational objectives.cational approach ad6ocatedAn important goal of the undergraduate curriculum in chemical engineering is to develop the integration, design,and evaluation capabilities of the student.As shown in Fig.1,Bloom(1956),characterized the six cognitive levels in the hierarchy:Knowledge Comprehension Application Analysis Synthesis Evaluation.The cognitive skills at the highest level are synthesis and evaluation,which rely on comprehen-sion,application,and analysis capabilities in the knowl-edge domain,and are consequently the most difficult and challenging to teach.However,to prepare under-graduates to be effective designers in industry,it is important to ensure an adequate coverage of these higher-level skills,rather than limit their education to one based on just knowledge,comprehension,applica-tion,and analysis.To achieve the desired coverage in a cost-effective manner,it is important to define instruc-tional objectives in each undergraduate course in a manner such that the six skills are covered by the senior year.Note that Bloom’s taxonomy has been applied in chemical engineering by Fogler and LeBlanc(1995), Fogler(1999),Felder and Rousseau(2000).The focus of the learning activity is placed on the accomplishments expected from the student through the formulation of course goals in terms of instructional objectives.The key is to provide material that increases the abilities of the students,with the emphasis being on what the student is able to achieve rather than merely what he or she is aware of or understands.As an example of a possible approach,the instructional objec-tives for a typical course on process design might be: On completion of this course,the student should be able to:Carry out a detailed steady-state simulation of a chemical process using a process simulator(e.g. HYSYS)and interpret the results.Synthesize a network of heat exchangers for a chemi-cal process such that the maximum energy is recov-ered or the minimum number of exchangers is used. Synthesize a train of separation units.Suggest reasonable process control configurations us-ing qualitative methods.Formulate and sol6e a small-scale process optimiza-tion problem using a process simulator(e.g. HYSYS).E6aluate process alternatives at various levels:single units,complete plants,and the conglomerate level.Fig.1.Bloom’s taxonomy of educational objectives(Bloom,1956).D.R.Lewin et al./Computers and Chemical Engineering26(2002)295–306297Exercise judgment in the selection of physical prop-erty correlations for design.It is noted that these objectives focus on the profi-ciency in required skills expected from the student. Clearly,a precondition for exhibiting these skills is that the student understands the underlying material.Fur-thermore,it is our experience that students feel more comfortable with clearly defined objectives that quan-tify what is expected of them.2.2.The design project and process simulator as means to integrate process knowledgeA designer must have a working knowledge of math-ematics,chemical and physical technology,biotechnol-ogy,materials science,and economics,which are the building blocks used by the design engineer.This knowledge is developed in a structured fashion in the core chemical engineering courses.It is advantageous to develop the capabilities of the students with a process simulator,in conjunction with the core course materi-als,as will be discussed shortly.The integration skills of the students are developed through their solution of industrially-relevant design case studies.During the design project,teams of students are expected to call upon diverse aspects of their working knowledge to carry out an integrated process design,determining its feasibility with respect to environmental impact,safety, controllability,and economics.In so doing,the student designer integrates previously acquired knowledge in the engineering disciplines,as well as management skills.Due to the problem scale,this inevitably involves the use of a process simulator to formulate and solve the material and energy balances,with phase and chem-ical equilibrium,chemical kinetics,etc.and to size process equipment for cost estimation.Familiarity and competence in the use of a simulator permit the student to quickly develop a base-case design,which is verified against process and thermodynamic data.The availabil-ity of a reliable process model allows the design team to assess rapidly the economic potential for alternative designs,as well as to derive optimal operating condi-tions using optimization methods that incorporate eco-nomics.Moreover,competence in the use of the simulator allows process evaluation to go beyond eco-nomics alone;controllability and operability can be assessed using dynamic simulation,while some simula-tors automatically provide information to help deter-mine the environmental impact of each of the product streams.Process simulators are an indivisible part of modern practice in chemical process design.This has been true for some time in the petrochemicals,bulk andfine chemicals industry,and is rapidly becoming true in biotechnology and microelectronics manufacturing.The routine use of the process simulator in industry implies that chemical engineering graduates should be com-petent to utilize these tools in the analysis,synthesis, and evaluation of process designs.Once students have learned to use simulators intelligently and critically, they appreciate how easy it is to incorporate data and perform routine calculations,and master effective ap-proaches to building up knowledge about a process.As discussed next,the level of simulation skills required of the students completing industrial-scale design prob-lems imply sufficient exposure to the use of simulators during the core courses.e of the simulator in core courses:opportunities and challengesThe high level of competence in the use of simulation expected of the students in the design project relies on their having obtained exposure to simulation in parallel with the core courses.One way to accomplish this is to require students to solve at least one exercise involving the use of simulators as part of each core course. Indeed,recent articles by Russell and Orbey(1993), Bailie,Shaeiwitz,and Whiting(1994)discuss the addi-tion of design projects in the sophomore and junior years.Table1provides a typical simulator-based exer-cise for core courses in the chemical engineering cur-riculum.Adoption of such a sequence goes far in preparing students to use a simulator in solving large-scale problems in the senior design course.With the wide availability of commercial process simulators to educators,the working knowledge of mathematics, chemical and physical technology,and economics can be put to effective use in solving meaningful problems, starting in the sophomore course on material and en-ergy balances,by solving various parts of a complete process with a process simulator.The third author of this paper recalls vividly his experience as a junior when taking thefirst course in chemical engineering,based on material in Chemical Process Principles—Part1—Ma-terial and Energy Balances(Hougen&Watson,1943). The instructorfirst covered the fundamentals in Chap-ters1–9,with application to and homework exercises for small closed-end problems.The last2weeks of the course were spent on Chapter10,which involved mate-rial and energy balance calculations by hand for a complete process.Although the calculations were te-dious and very time consuming,students developed an appreciation of what chemical engineering was all about and a desire to proceed to the next level of instruction.Today,the tediousness and time-consuming aspect of process calculations can be eliminated and some time can be spent on teaching synthesis and evaluation skills, even in the sophomore year.The material and energyD.R.Lewin et al./Computers and Chemical Engineering26(2002)295–306298Table1Core course sequence and typical exercises using simulatorsCourse ObjectivesExerciseAnalysis of methanol synthesis loopMass and Convergence of material and energy balances for processes with recycle energy and purge streamsbalances Analysis of sensitivity to degrees-of-freedomSelection of economically optimal operating conditionsHeat-integrated toluene dehydroalkylationHeat transfer Designing a heat exchanger for vaporizingfluid(computing temperatureapproaches)(see Fig.1(d))Optimal selection of heat-transfer area,weighing reduced energy demandsin furnace against increased cost of exchangerAvoidance of temperature crossoversThermodynamics Constructing T–x–y diagrams for Impact of estimation method on the accuracy of thermodynamicproperties,including K-values and enthalpies.alcohol–water systemsSimulation of a depropanizer column Impact of design variables(e.g.number of ideal trays,feed tray location) Separationprocesses on performance of the columnImpact of selection of degrees of freedom on attaining columnspecificationsDifficulties in converging multicomponent,multistage separation models Dynamics and control of a binary distillationDynamics and Learning to set up a dynamic simulationcontrol column Definition of controlled and manipulated variables and the installationand tuning of control loopsTesting the dynamic resiliency of the columnProcess design Optimization of a multi-draw column Learning to use the simulator to set up and solve an optimizationproblemObserving the importance of selecting the appropriate manipulatedvariables for optimizationObserving the impact of process constraintsbalance course is taught in the sophomore year,using textbooks such as Himmelblau(1996),Felder and Rousseau(2000).Both of these books cover essentially the same fundamentals as presented in the Hougen and Watson textbook.In addition,Himmelblau(in Chapter 6)and Felder and Rousseau(in Chapter10)cover the solution of material and energy balances for continu-ous,steady-state processes with a process simulator. Both texts leave to the instructor the choice of a process simulator and instruction on how to use it,so unless he or she is knowledgeable in the use of computer-aided process simulation programs,it is probable that this material will not be covered.In Chapters12and13of Felder and Rousseau,two fairly complex processes are described and problems given for making material and energy balances,as well as other chemical engineering calculations.Calculations for the methanol synthesis process in Chapter13are particularly suitable for the use of a process simulator and serve as an excellent introduction in the sophomore year to process design. The use of a process simulator in the sophomore year introduces the student to the importance of being famil-iar with a large number of chemical species;the use of physical properties such as density,vapor pressure, specific heat,enthalpy,and K-values;the ease of chang-ing units;the ease of drawing processflow diagrams with systematic ways of numbering streams and equip-ment units;and methods of handling recycle.If students are introduced to the use of a process simulator in the sophomore year,their skill in using simulators can be further enhanced in the junior year in courses influid mechanics,heat transfer,separations, thermodynamics,and reaction engineering.The course influid mechanics can include simulator calculations of pipeline pressure drop,sieve-tray pressure drop,and power requirements of pumps,compressors,and tur-bines.The study of heat exchangers in the heat transfer course can include the detailed design of a heat ex-changer,including considerations of the complex varia-tion of the temperature driving force,temperature crossover violations,and prediction of bubble and dew points for multicomponent mixtures.Process simulators are quite useful in the solution thermodynamics course because the tedious calcula-tions of activity coefficients,K-values,bubble and dew points,vapor–liquid equilibria,liquid–liquid equi-libria,and data correlation are readily carried out,and property graphs and tables are easily prepared.When a process simulator is used in a thermodynamics course, less time need be spent on the myriad of equations thatD.R.Lewin et al./Computers and Chemical Engineering26(2002)295–306299appear in the textbooks and more time can be spent in solving practical problems that demonstrate the impor-tance of thermodynamics to students.Regrettably,the use of a process simulator in a solution thermodynam-ics course does not appear to be considered in the leading textbooks on the subject.Instead these text-books either provide their own computer programs for computing physical properties or suggest the use of popular numerical-method programs.Thus,the oppor-tunity to integrate the important lessons learned in the solution thermodynamics course for the later benefit of the capstone design course is often missed.The se-parations course can profit greatly from the use of process simulators to solve both binary and multicom-ponent,multistage separation operations such as distil-lation,absorption,stripping,and liquid–liquid extraction.It is suggested that less time be spent on graphical methods that are limited to binary and ternary mixtures,with more time spent on multicompo-nent separations that are readily handled by process simulators.The reactor-engineering course also affords an excel-lent opportunity to tackle practical problems in reactor design after completing instruction on the ideal plug-flow and CSTR ing an enthalpy datum of the elements(rather than the compounds),simulators readily handle reactor energy balances without the need to supply heat of reaction information.Simulators also readily compute chemical or simultaneous chemical and physical equilibrium using either the equilibrium-con-stant method for specified stoichiometry or the mini-mization of free energy method for specified product chemicals.Activity coefficients can be taken into ac-count and complex kinetic expressions can be specified. Here too,the use of process simulators to design chem-ical reactors appears to be ignored in the leading text-books on chemical reaction engineering.As discussed by de Nevers and Seader(1992),the use of process simulators prior to the senior design course provides students with an opportunity to develop a critical attitude towards chemical process calculations. They cite a problem involving the condensation and subsequent single-stageflash separation at100psia of a vapor mixture of ammonia and water,initially at290F and250psia.The studentfirst solves this problem graphically using an enthalpy–concentration diagram. The result,which is considered to be reasonably accu-rate,is a vapor of\99wt.%ammonia and a liquid of about68wt.%ammonia at a temperature of about80 F.The student then solves the problem numerically with a process simulation program.He or she is re-quired to select at least four different pairs of K-value and enthalpy correlations for comparison with the graphical solution.Many students are shocked by the widely varying results.For example,with one set of four pairs of correlations,theflash temperature ranges from−91.2to83.4°F with an average of0.5F.From then on,students pay careful attention to the selection of correlations for physical properties.The educational importance of discussing errors is also presented by Whiting(1987,1991).Students who have used process simulators through-out the chemical engineering curriculum are in a posi-tion in the senior design course to concentrate their efforts on synthesis and evaluation aspects of process design.Instructors can devote more time to instruction in the synthesis of heat-exchanger systems using pinch analysis,the synthesis of nearly-and non-ideal separa-tion trains,second-law analysis,economic evaluation, optimization,waste minimization,safety,environmen-tal impact,and controllability.During the senior design project,teams of students are better prepared to call upon diverse aspects of their working knowledge to carry out an integrated process design and determine its feasibility from all aspects,not just economics.2.4.Effecti6e instruction in process simulation:the role of self-paced approachesThe quality of training may be enhanced,and in-struction resources used more efficiently,through the use of multimedia and web-based approaches.Such self-paced methods of training undergraduates allow them to obtain the details they need to use the simula-tors effectively,saving instructors class time,as well as time answering detailed questions as the students use simulators to make calculations.In a typical situation, when creating a base-case design,students can use the examples in the multimedia tutorials to learn how to obtain physical property estimates,heats of reaction,flame temperatures,and phase distributions.Then,stu-dents can learn to create a reactor section,using the simulators to perform routine material and energy bal-ances,and in some cases kinetic calculations,to size the reactor.Next,they can create a separation section, which often involves multicomponent,multistage distil-lation-type calculations(Seader&Henley,1998),which almost always leads to the addition of recycle streams. Using the coverage of process simulators in the multi-media tutorials accompanying the textbook by Seider et al.(1999),the instructor needs only to review the highlights of simulator usage in class.This invariably leaves time for the discussion of more advanced issues. Furthermore,through installation of the multimedia materials on the web,students gain access to the mate-rial from remote locations.Our experience is that the response of students to self-paced multimedia instruc-tion has been very positive.D .R .Lewin et al ./Computers and Chemical Engineering 26(2002)295–3063003.A balance between heuristic and algorithmic approachesThe teaching of design should strike a balance be-tween heuristic and algorithmic approaches.Since de-sign invariably involves signi ficant designer intervention,it is important to teach both heuristics as well as computer-aided algorithmic methods.The for-mer lay the foundations for acquiring the experience necessary to carry out practical process design,while the latter is critical to ensure the generation of optimal designs.Process synthesis is generally introduced first by ex-ample and by instructing students to rely on heuristics (Douglas,1988).These heuristic rules are important in that they provide a framework for workable designs,based on easy to understand rules of thumb (Walas,1988).For example,consider the synthesis of a process to hydrodealkylate toluene using a number of heuristic rules,which lead to the sequence of flow diagrams shown in Fig.2(Seider et al.,1999).It is noted in Fig.2(a)that an undesirable side-reaction to biphenyl ac-companies the principal reaction,and the conversion of toluene is incomplete.The selection of the reactions conditions is motivated by a desire to minimize the production of the unwanted side-product,while maxi-mizing the yield.The reaction conditions lead to the distribution of chemicals shown in Fig.2(b),in which unreacted toluene and hydrogen are recovered by in-stallation of two material recycle streams.The two reaction products (benzene and biphenyl)are removed from the unreacted toluene and hydrogen by installa-tion of a separation section.One possible arrangement consists of the flash vessel and three distillation columns shown in Fig.2(c).It is noted that heuristics dictate that column operating pressures should be se-lected to allow the usage of cooling water whenever possible.Finally,Fig.2(d)shows a possible instantia-tion of task integration,in which a preheater is installed to supply much of the heat duty required to bring the reactor feed to the high temperature that favors the primary reaction,by exchange with the hot reactor products,which need to be cooled.This arrangement signi ficantly reduces the heat duty required in the furnace.As the heuristic ideas are mastered,the students should be directed to computer-aided algorithmic ap-proaches that assist them in the generation of better designs.Several algorithmic approaches,which have great practical value,should be presented.These in-clude heuristic and evolutionary synthesis of nearly ideal vapor –liquid separation sequences (Seader &Westerberg,1977),synthesis of separation systems for non-ideal liquid mixtures (Malone &Doherty,1995),the application of second -law analysis (Seider et al.,1999)to identify opportunities for improved energyFig.2.The evolution of the flowsheet for a process to hydrodealkylate toluene.D.R.Lewin et al./Computers and Chemical Engineering26(2002)295–306301Fig.2.(Continued)D.R.Lewin et al./Computers and Chemical Engineering26(2002)295–306 302utilization,and the application of methods to compute heat recovery targets(Linnhoff&Hindmarsh,1983), and to assist in the design of optimal or near-optimal heat-exchanger networks(Smith,1995).For example, the following algorithmic approaches can refine the design in Fig.2(c):pare the separation sequence in the base-casedesign to alternative sequences by branch-and-bound search.2.Check the utility requirements against the thermo-dynamic MER(maximum energy recovery)target using the temperature-interval or graphical meth-ods.Then,a mixed-integer non-linear program (MINLP)can be implemented to derive an optimal design for implementation.There may be additional opportunities for energy savings.For example,a number of alternative heat-integration configura-tions can be considered for the column sequence proposed in Fig.2(c).In these configurations,the heat of condensation in a column operating at high pressure is used to supply the heat of vaporization in a column operating at a lower pressure,requiring careful selection of column operating pressures to ensure sufficient temperature driving forces.In se-lecting between these alternatives,the economic benefits need to be weighed against their impact on the operability of the process,as discussed next. 4.Integration of design and controlTraditionally,plant controllability and operability has been considered late in the design process,often leading to poorly performing chemical plants.The in-disputable fact that design decisions invariably impact the process controllability and resiliency to disturbances and uncertainties is driving modern design methods to handleflowsheet controllability in an integrated fash-ion.Several recent articles,including Rhinehart,Na-tarajan,and Anderson(1995),Edgar(1997),stress the need to integrate process control with process design. The model of an industrial chemical process for study-ing process control technology presented by Downs and Vogel(1993)has proved to be very valuable in helping to bridge the gap.Morari and Perkins(1995)stress the importance of steady-state and dynamic analysis in the determination of controllability.Perkins(2000)cites the need for educators to develop a systematic process systems approach that considers design,operation and control.Lewin(1999)describes the state-of-the-art and suggests that two alternative approaches,controllability and resiliency(C&R)screening methods and integrated design and control,can ensure that chemical plants meet design specifications.While C&R analysis is used for screening early in the design process,the integrated design and control approaches can be applied to fully optimize and integrate the design of the process and its operation.Lewin focuses on three critical aspects that are predicted to characterize future activity in inte-grated design and control:1.The quantitative assessment of chemical processcontrollability and resiliency has generated consider-able interest,both academically and in industry.The vendors of commercial simulation software equate controllability assessment with dynamic simulation, and ultimately,plant-wide operability and control-lability needs to be verified using this tool.However, it is more important to initiate C&R diagnosis with-out this expensive and engineering-intensive activity.It has been shown that controllability analysis re-duces the alternatives early in the design process (Perkins&Walsh,1994;Weitz&Lewin,1996;Solovyev&Lewin,2000).The challenge to the vendors is to build these tools directly into their simulation software.2.Approaches for integrated design and control areimportant for improving afinal design(Bansal, Mohideen,Perkins,&Pistikopoulos,1998).To ef-fectively use a MINLP,it is necessary to develop methods to prune the network of configurations evaluated by the MINLP solver.The commonly used heuristic approach for MINLP network pruning can be replaced by adopting C&R analysis.3.The training of chemical engineers,who should betaught to view design and control as an integrated activity,is a precondition to the future advancement of thisfield(Seider et al.,1999;Luyben,Tyreus,& Luyben,1999).To this end,both the fundamentals of process dynamics and control,and the impact of design on control,should be covered adequately in the undergraduate curriculum.The concern here is the need to bridge the gap between traditional pro-cess control courses,which emphasize theory,and applications to actual processes.As an illustration,consider potential control prob-lems in theflowsheet in Fig.2(d),and their resolution by adopting C&R diagnosis during the design process: 1.Impact of recycle:The positive feedback loops asso-ciated with the material recycles in theflowsheet can amplify feed disturbances.Careful controllability assessment indicates that the control configuration needs to account for the dynamic interaction be-tween the process units.More specifically,to elimi-nate the disturbance amplification caused by the material recycles,it is recommended that theflow rate of the recycle streams be controlled,either directly or indirectly by manipulating the purge stream.2.Impact of heat-integration:The loss of degrees-of-freedom associated with heat integration may cause the quality of control to deteriorate,depending on the configuration selected.。
PVD-Process-introduction-PVD 工艺介绍资料
TIN
2) Ti: a. if no Ti layer:AL+N+=> ALN3
Ti
ARC
b. if has Ti layer: AL+Ti+ N+ =>ALTi3+TiN
TI
ALTi3(Rs) <ALN3(Rs)>
AL
c. Ti can prevent EM.
TIN
Ti
TTN process
Al-Cu Phase Diagram
PVD Chamber Configuration
CRYO PUMP
ROUGHING VALVE
GATE VALVE
MAGNET
WAFER
PEDESTAL
MOTOR
COOLING WATER
TARGET
SHIELD
CLAMP RING
LIFTER
DC POWER
GAS VALVE
ROUGHING VALVE
Sputtering
Sputtering
Target Erosion
AMAT ENDURA 5500
Transfer Chamber
PVD Chamber
Robot
Preclean Chamber
Buffer Chamber
Cooldown Chamber
Wafer Orienter/Degas Chamber
Film Stacks
Si
O
O
❖ Bottom TTN Layer
1) Ti:a)Buffer; Ti =>TiO+Si (Rs low); 2) TiN: 隔开AL : AL+Ti=>TiAL3 (Rs ) ARC
PVD Process introduction-TJ050419
MAGNET
DC POWER
TARGET
GATE VALVE
SHIELD WAFER CLAMP RING LIFTER PEDESTAL GAS VALVE
CRYO PUMP
ROUGHING VALVE ROUGHING VALVE
MFC
GAS VALVE BAKE OUT LAMP
GAS DC Voltage
MOCVD TiN
plasma treatment TDMAT(TiCxNyHz) N2 H2
TiN
MOCVD TiN
Plasma Treatment Enhance Key Film Properties
N2
+
H2
+
CxHy+HNR2
(By-products pumped out)
TiCxNyHz
Passivation
M4
17KA
IMD-3 M3
17KA
IMD-2 M2
PETEOS SACVD
17KA
IMD-1 M1 ILD FOX P+ N-well FOX P+ N+
P-
PETEOS AlCu SACVD
W
FOX
NNPP-
N+
PP-well
P- P-
Memory- Typical Schematic
Ox Spacer
Comparison of Different Silicide Schemes
Silicide Resistivity (µΩ-cm) RTA1 Temperature (oC) RTA2 Temperature (oC) Film Stress (dyn/cm 2) Silicon Consumption (element/silicon/silicide) (A) Line width Dependence Moving species Stability (oC) TiSi2 (C54) 13-16 600-800 (C49) 700-900 (C54) 1.5 E10 1 / 2.22 / 2.50 CoSi2 14-18 400-600 (CoSi) 650-850 (CoSi2) 1.2 E10 1 / 3.61 / 3.49
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保固服務不包含：• 電池壽命；• 正常磨損和老化（例如：錶殼或錶鏡的磨損；錶殼、錶帶和錶鏈的顏色或皮革、織物和橡膠等非金屬材質的改變；PVD鍍層褪色；青銅變色）；• 任何因非正常使用/濫用、粗心大意、過失、意外（撞擊、敲擊、擠壓、鏡面破損、更換錶帶時的刮痕等）、不正確使用以及不遵守使用手冊而造成的腕錶任何部件的損壞；• 任何間接損失，例如由於使用或停走、瑕疵或走時不準而造成的間接損失；• 由未經授權的人員操作（如更換電池、提供保養和維修服務）或者非Compagnie des Montres L ongines Francillon SA授權人員進行的改裝。
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塑件pvd工艺流程
塑件pvd工艺流程英文回答：PVD (Physical Vapor Deposition) is a widely used technique in the manufacturing of plastic parts. It is a process that involves the deposition of a thin film onto the surface of a plastic component using physical vaporization methods. The PVD process can enhance the appearance, durability, and functionality of plastic parts.The PVD process typically involves the following steps:1. Cleaning and preparation: Before the PVD process can begin, the plastic component needs to be thoroughly cleaned and prepared. This is done to remove any dirt, grease, or contaminants that may be present on the surface. Cleaning can be done using a variety of methods, such as ultrasonic cleaning or solvent cleaning.2. Pre-treatment: After cleaning, the plastic componentmay undergo pre-treatment to improve adhesion. This can involve the use of a primer or a plasma treatment to modify the surface properties of the plastic and promote better bonding with the PVD coating.3. PVD coating: The actual PVD coating process involves the vaporization of a solid material, typically a metal, in a vacuum chamber. The vaporized material then condenses onto the surface of the plastic component, forming a thin film. This can be done using various techniques, such as sputtering or evaporation.4. Post-treatment: Once the PVD coating is applied, the plastic component may undergo post-treatment to further enhance its properties. This can involve processes such as annealing, where the coated component is heated to improve the adhesion and durability of the coating.5. Quality control: Throughout the PVD process, it is important to monitor and control various parameters to ensure the quality of the final product. This can involve measuring the thickness and adhesion of the coating, aswell as conducting visual inspections to check for any defects or imperfections.PVD工艺流程：PVD（物理气相沉积）是塑件制造中广泛使用的一种技术。
PVD涂层对于材料热处理和表面质量的要求 (1)
Page 6 Oerlikon Balzers China : 2008
Micro Structure Martensite + Retained Austenite 马氏体微观结构+残留奥氏体
Time
Tempering reduces internal stresses produced during the hardening process 回火降低淬火过程产生的内应力
Blanking
成型
冲压
Temperatures of austenization 淬火温度[°C]
1000
1050
1100
1150
Heat treatment - Hardening and tempering cycles are the base for a optimal tool performance 热处理 － 淬火和回火周期是得到最佳工具性能的基础
64 62
Hardness HRc 硬度 HRc Ductility韧性 Hardnes s 硬度 Example例如: D2 Steel (tempering at 550°C 550度回火)
60 58 56
Forming
54 52 950
Page 4 Oerlikon Balzers China : 2008
Coating涂层
Bad surface不良表面
caused by contaminated abrasives (not suitable for coating) 由于研磨剂污染造成（不适合涂层）
Good surface良好的表面
Page 10
Oerlikon Balzers China : 2008
半导体术语——精选推荐
Max Mean Measure Merge Metal Message Mode Mark Mother Lot
最大值 平均值 测量 合并 金属 信息 模式 标记 母批
FA (failure analysis)
失效分析
HEPA (High Efficient Particulate Air)
filter
快速热氧化
Vapor Phase Epitaxy (VPE)
汽相外延法
Metaloranic CVD (MOCVD)
金属有机物CVD
Moleculur Beam Epitaxy(MBE) 分子束外延
Vacuum Evaporation
真空蒸发法
Sputtering
溅射法
Patterning
光刻
Resist
Quality
品质
Quit
退出、离开
Retry
重试
Rework
返工
Run
运行
Range
范围
Recipe
程序
Record
记录
Release
放行；解放
Reset
重置、重启
Resist
光刻胶
Restart
重新开始
Reject
拒绝
Save
保存
Safety
安全
Sample
样本
Scanner
扫描式光刻机
Setup
英文
中文
Abort
中断、停止
Accept
接受
Action
行动
ADI(after develop inspection)
显影后检测
AE(Assist engineer)
[工艺]ThinFilmProcess的经典讲解
![[工艺]ThinFilmProcess的经典讲解](https://img.taocdn.com/s3/m/3d7cfd2aef06eff9aef8941ea76e58fafab04586.png)
[工艺]ThinFilmProcess的经典讲解
ThinFilm(薄膜)主要包含CVD和PVD，CVD（Chemical Vapor Deposition)主要依靠反应气体在等离子体电离能量下，化学分解反应，主要用语后端温度比较低(~400,450C)。
而PVD(Physical Vapor Deposition)主要是用来金属沉积，因为很少有金属的气态化合物分解产生单质金属，除了MOCVD的钨(W)和Damascene的铜(Cu)制程。
主要依靠直流溅射顶部的金属靶材是的金属原子撞击落下。
CVD的几个重要参数（下corner 90度，上corner 270度，表面180度，所以沉积速率不一样导致）：
1、侧壁Step Coverage: 底部最薄处除以顶部厚度比值 (b/a)
2、底部Step Coverage: 底部最薄处除以顶部厚度比值(d/a)
3、保角性(Conformity): 底部厚度除以上corner厚度 (b/c)
4、肩膀突出(Overhang): 上肩膀厚度减去底部侧壁厚度之差除以底部厚度(c-b)/b
5、纵宽比(Aspect Ratio)：金属高度除以space(h/w)，用于衡量gap fill能力。
6、D/S ratio (deposition/Sputter) : 常用于HDP的制程，因为通常的CVD在上口先封口，所以会产生空洞，必须在沉积过程中有plasma轰击是的上口的封口打开。
各种film的summary:
这里面还没有包含Low-K物质，FSG的介电常数~2.7，在0.18um以下制程会降低金属互连的电容，减小R*C delay。
摘自芯苑。
PVD技术制程介绍
*
第三步 反應成膜
Ar+ + N2 2N +Ar+ Ti + N TiN
基底材料
*
PVD技術應用于金屬外殼之優點
高金屬質感和艷麗飽滿的色彩效果 優異的功能性(與基材的良好結合﹐高的硬度和耐磨性等) 底材選擇的多樣化(如不鏽鋼﹐鈦合金﹐甚至鋁合金) 制程的良好的穩定性和再現性 適應現代環保潮流
耐刮測試（Rod-scratch Test）
1N or 2N No scratch
4
膜厚測試（Film Thickness Test）
通常要求1um~2um; 有的專案要求2.6um以上
5
鹽霧測試(Salt mist Test)
No change after test
*
7.1 震動研磨測試方法介紹
*
2.1 不銹鋼產品PVD清洗流程圖 SS Product Cleaning Flow Chart
上挂 Racking
除蠟 Dewax
氧化 Oxidation
烘烤 Baking
除蠟 Dewax
酸洗 Acid rinsing
下挂 Unracking
純水洗 Pure water cleaning
NLV-LH PVD廠 承制
新專案/新色需求 New Project/Color Demand
送候選金樣 Golden Sample
6. PVD新色開發流程 PVD Color Development Flowchart
*
PVD新色承認 PVD New Color Approval Items
PVD新色承認
樣品製作 Sample Preparation
pvd镀膜设备断电流程
pvd镀膜设备断电流程英文回答：PVD Coating Equipment Shutdown Procedure.Step 1: Prepare for Shutdown.Stop the deposition process by closing the vacuum valves.Turn off the substrate heating power.Allow the chamber to cool down to room temperature.Step 2: Vent the Chamber.Slowly open the vent valve to allow nitrogen or argon gas to enter the chamber.Continue venting until the chamber pressure reachesatmospheric pressure.Step 3: Clean the Deposition Chamber.Remove any deposited material from the chamber walls, substrate, and other components.Use a soft brush or cloth and a suitable cleaning agent.Step 4: Clean the Magnetron Sources.Remove any accumulated material from the magnetron sources.Use a soft brush or cloth and a suitable cleaning agent.Step 5: Turn Off the Vacuum System.Turn off the vacuum pumps.Disconnect the vacuum hoses.Step 6: Turn Off the Electrical System.Turn off the main power switch.Unplug the equipment from the power outlet.Step 7: Perform Safety Checks.Ensure that all valves are closed and locked.Check for any remaining hazards or potential leaks.Step 8: Document the Shutdown.Record the shutdown time and any observations in a maintenance log.中文回答：PVD镀膜设备断电流程。
pvd清洗工艺流程
pvd清洗工艺流程英文回答：PVD cleaning process is a crucial step in ensuring the quality and performance of products. The process involves several steps to remove impurities and contaminants from the surface of the material before the physical vapor deposition (PVD) coating is applied.Firstly, the material to be coated is cleaned using a solvent or detergent to remove any oils, grease, or dirt that may be present on the surface. This step is important because any contaminants left on the surface can affect the adhesion of the PVD coating.Next, the material is rinsed thoroughly to remove any residue from the cleaning solution. This is usually done using deionized water to ensure that no impurities are left behind.After rinsing, the material is dried using a gentle stream of nitrogen or air to prevent water spots from forming on the surface. It is important to ensure that the material is completely dry before proceeding to the next step.Once the material is clean and dry, it is placed in the PVD chamber for the coating process. The chamber is evacuated to create a vacuum environment, and the material is bombarded with high-energy ions to remove any remaining contaminants on the surface.Finally, the PVD coating is applied to the material using a variety of techniques such as sputtering or evaporation. This coating enhances the material's properties and provides a protective barrier against wear and corrosion.Overall, the PVD cleaning process is essential for ensuring the quality and longevity of the coated material. By following these steps carefully, manufacturers can produce high-quality products that meet the higheststandards of performance and durability.中文回答：PVD清洗工艺流程是确保产品质量和性能的关键步骤。
PVD设备构造 和工艺流程
1 / 65 TFT 的发展Shanghai Tianma Micro-Electronics CO.,LTD2 / 65 SMD-950验收前报告2007. 7. 28金光燮PVD 设备构造和工艺流程Shanghai Tianma Micro-Electronics CO.,LTD3 / 65 SMD-950验收前报告目 录1. 设备LAY OUT 的介绍.2. 溅射设备的构成.3. 原理&Process 介绍.4. 影响Process 的因素.5. 设备安全教育 多真空室设备Shanghai Tianma Micro-Electronics CO.,LTD4 / 65 SMD-950 设备LAY OUT 的介绍设备LAY OUT各腔体详细介绍:GATE#1 GATE#2 S/DAl Mo Al Mo Mo2个 1个 2个 1个3个ITO ITO 4个 Shanghai Tianma Micro-Electronics CO.,LTD5 / 65 SMD-950设备---------溅射设备构成1. 溅射镀膜的设备－SPUTTER溅射镀膜的设备由装卸片腔,传送腔,加热腔,贱射腔组成.装卸片腔:上/下料腔传送腔 :包括真空中的基板传送机械人 .加热腔 :包括多用电热板 .贱射腔 :包括溅射阴极，电热板 .(3个腔体)控制台 :对设备进行条件设定和运行控制的操作台 .Sputtering 设备总共由7个腔体构成.（2个上/下料腔，1个加热腔，3个溅射腔，1个传送腔）装载系统包括投入装置和上料部，完成从专用蓝具取出玻璃 基板，搬运并将基板装入专用托架，使托架处于待进入主体 状态的任务。
卸载系统包括下料部和取出装置，完成将基板 安全从专用托架上取出、搬运并装入专用蓝具的任务。
Shanghai Tianma Micro-Electronics CO.,LTD6 / 65 PVD---Physical vapor depositionShanghai Tianma Micro-Electronics CO.,LTD7 / 65 System structure of SMD-950Shanghai Tianma Micro-Electronics CO.,LTD8 / 65 Loading/Unloading chamberShanghai Tianma Micro-Electronics CO.,LTD9 / 65 Loading/Unloading chamberShanghai Tianma Micro-Electronics CO.,LTD10 / 65 Heating chamberShanghai Tianma Micro-Electronics CO.,LTD11 / 65 Heating chamberShanghai Tianma Micro-Electronics CO.,LTD12 / 65 Transfer chamberShanghai Tianma Micro-Electronics CO.,LTD13 / 65 Transfer chamberShanghai Tianma Micro-Electronics CO.,LTD14 / 65 Sputtering chamberShanghai Tianma Micro-Electronics CO.,LTD15 / 65 Sputtering chamberShanghai Tianma Micro-Electronics CO.,LTD16 / 65 SMD-950 设备LAY OUT 的介绍Shanghai Tianma Micro-Electronics CO.,LTD17 / 65 Sub floor systems of SMD-950Shanghai Tianma Micro-Electronics CO.,LTD18 / 65 Sub floor systems of SMD-950Shanghai Tianma Micro-Electronics CO.,LTD19 / 65 Sub floor systems of SMD-950Shanghai Tianma Micro-Electronics CO.,LTD20 / 65 Sub floor systems of SMD-950Shanghai Tianma Micro-Electronics CO.,LTD21 / 65 ＳＭＤ－９５０设备--------- Process 介绍原理&Process 介绍.Shanghai Tianma Micro-Electronics CO.,LTD22 / 65 SPUTTERING 的原理SPUTTERING 的原理:具有100~1000eV 能量的粒子冲击到靶材时,入射粒子的运动量交换原理,从靶材释放出一定能量的粒子溅射到玻璃基板上面.特点：使用SPUTTERING 方法溅射出来的膜,一般膜的付着力强,应力也大.★入射粒子冲击的材料叫做 靶材.★释放到空间的原子的能量有1~100eV.Shanghai Tianma Micro-Electronics CO.,LTD23 / 65 RF 溅射与DC 溅射的特性RF 溅射与DC 溅射RF 溅射1.通常用13.56MHz 的高频电源。
pvd工艺流程最简单方法
pvd工艺流程最简单方法(中英文实用版)英文文档：The simplest method for PVD process flow involves several steps.First, the substrates are cleaned to remove any contaminants.Next, the substrates are loaded into the PVD chamber.The chamber is then vacuumed to create an environment with low pressure.Once the chamber is vacuumed, a precursor gas is introduced, which reacts with the substrates to form a thin film.After the film formation, the substrates are removed from the chamber and undergo post-processing, such as annealing or etching, to improve their properties.Finally, the substrates are dried and packaged for use.中文文档：PVD工艺流程的最简单方法包括几个步骤。
首先，清洗substrates 以去除任何杂质。
接下来，将substrates 加载到PVD 腔室中。
然后，抽真空以创建低压环境。
一旦腔室抽真空，引入前驱气体，它与substrates 反应形成薄膜。
膜形成后，将substrates 从腔室中取出，进行后处理，例如退火或蚀刻，以改善其性能。
forming process 成型工艺 半导体工艺
forming process 成型工艺半导体工艺
成型工艺（forming process）是指将原始材料通过特定的方法和设备进行加工和形成目标产品的过程。
在半导体工艺（semiconductor process）中，成型工艺是将半导体材料通过各种化学、物理和电子过程进行加工，形成芯片或其他半导体器件的过程。
具体的成型工艺步骤会根据不同的半导体器件种类和生产要求而有所区别，但一般包括以下几个主要步骤：
1. 晶圆制备：从单晶硅材料中切割出圆形晶片（称为晶圆）作为基板。
2. 清洗：使用化学溶剂或超纯水对晶圆进行清洗，去除表面的污染物和颗粒。
3. 薄膜沉积：将一层薄膜材料沉积在晶圆表面，通常采用物理气相沉积（PVD）或化学气相沉积（CVD）等方法。
4. 光刻：使用光刻胶和掩模（mask）制作光刻层，通过光照和化学溶解来定义器件的结构和图案。
5. 蚀刻：使用化学溶液或物理蚀刻方法，去除光刻层之外的材料，形成所需的器件结构。
6. 接触/阳极/金属电极形成：在特定区域上形成接触、阳极和金属电极，用于连接和控制半导体器件。
7. 退火：在高温条件下对器件进行退火处理，以修复晶格缺陷和提高器件性能。
8. 清洗和测试：再次对器件进行清洗，然后通过各种测试和检验方法进行性能和质量的验证。
通过上述步骤的组合和重复，可以逐步形成具有所需电子特性的半导体器件。
成型工艺在半导体工艺中起着至关重要的作用，对最终的器件性能和可靠性有着重要影响。
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PVD 原理
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CSMC Confidential
台阶覆盖(step coverage)
– 侧壁台阶覆盖（通常所指的台阶覆盖，step coverage) – 底部台阶覆盖 – 共形性(Conformality) – 悬突(Overhang)
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CSMC Confidential
PVD Process
From:
二层钝化
氮化硅 一层钝化 USG
Al•Cu Alloy
Al•Cu Metal 4 USG
工艺运用： 1. Al-0.5%Cu： 导线 2. Ti/TiN： Barrier layer & Glue layer & ARC (Anti-Reflective Coating) 3. WSi / Co： Silicide 工艺
AVCO01
Pass Cooling Pre-clean Orient / Degas Orient / Degas Co TTN
Orient / Degas Orient / Degas TTN AL WSi TTN
Orient / Degas Orient / Degas IMPTi CVDTiN IMPTiN IMPTiN
CSMC Confidential
PVD 原理
From:
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CSMC Confidential
PVD 原理
From:
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CSMC Confidential
PVD 原理
CSMC Confidential
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PVD 机台
From:
主要工艺参数(Process Parameter) ：
(１) 工作压力：By process (２) 真空度：≤5E-8 Torr (３) 温度：By process (４) 溅射功率：By process (５) 磁场：By process
Al/Si互溶
From:
• Al与Si之间没有硅化物形成，但可形成合金。Al在 Si中的溶解度很低，但Si在Al中的溶解度却很高。 因此，当Al与Si接触时，在退火过程中，就会有 相当可观的Si溶到Al中去。这将引起Al尖刺现象。 • 在纯Al中加入少量Si形成AlSi合金材料，一般为 1%（Wt%），可以在很大程度上解决Al尖刺现 象。 • 但是它将引入另一个问题，就是Si析出问题。即 在合金退火过程中，一部分Si会溶解Al中直至饱 和，而剩余的Si将会以微粒形式存在Al中，当冷 却的时候，这些微粒Si会成为析出沉积Si的核， 并逐步增大成为Si单晶的结瘤。
From:
使Ar离子在磁场中做螺旋运动，增加与target碰撞的几率， CSMC Confidential /bbs 提高沉积速率
PVD 原理
From:
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CSMC Confidential
PVD 技术 • Standard PVD • Long through • Collimator • IMP（Ionized Metal Plasma）
Step coverage
better
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CSMC Confidential
From:
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CSMC Confidential
PVD 原理
From:
金属化材料的要求 （1）电阻率要低。 （2）粘附性好。 （3）抗电迁移能力强。 （4）抗腐蚀能力强。 （5）易刻蚀。 （6）膜的应力要低。
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Ti/TiN
IMD 3 IMD 3
TiNARC Metal 3 IMD 2 M2 IMD 1 M1 PMD STI n+ P-阱 P-外延 P-硅片 W n+ USG USG W Al•Cu W Al•Cu Alloy BPSG USG p+ N-阱l p+ PMD阻挡 氮化硅 WSi 2 Al•Cu Alloy Ti/TiN Ti
Long through PVD
/bbs Collimator PVD
CSMC Confidential
PVD 原理
From:
反溅工艺(Pre-clean) 等离子气氛下去除wafer表面的一层自然氧 化层，也可去除表面杂质离子、油污、颗 粒，改善溅射前wafer表面状态
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CSMC Confidential
PVD 机台
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CSMC Confidential
PVD 机台
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Ti/TiN
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CSMC Confidential
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CSMC Confidential
CSMC Confidential
PVD 机台
工艺类型 机台 Chamber类型 A B C D E F 1 2 3 4 备注：空白表示无 chamber
From:
Metal 机台
Barrier 机台
Co (钴)机台
AVAL02
Pass Cooling
AVTN01
Pass Cooling Pre-clean
薄膜
From:
c
a 深宽比 =h/w
h b d w
侧壁台阶覆盖 =b/a 底部台阶覆盖 =d/a 共形性 =b/c 悬突 = (c - b)/b
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CSMC Confidential
PVD 原理
From:
400 kH Confidential
CVDTiN 原理
From:
CVDTiN反应原料TDMAT在高温下离解为TiN。具有更好的 step coverage，但含有C、H杂质，阻值较高。
为了去除film中的C、H杂质，在沉积后需要对TiN film进行 plasma treatment。（Process流程见下）
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CSMC Confidential
PVD 机台
From:
原材料(Material)： Gas：Ar，N2 Target： Al-0.5%Cu（5N5） Ti G12（5N） IMP Ti（5N）/ IMP Coil WSi（5N, x=2.7） Cobalt（4N5）
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PVD Process Instruction
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CSMC Confidential
Outline
From:
• PVD 原理 • PVD 机台 • PVD Process
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CSMC Confidential
PVD 原理
From:
PVD的定义
Physical Vapor Deposition(物理气相沉积) 分为： 蒸镀：利用被蒸镀物在高温（接近其熔点）时的饱
和蒸气压，来进行薄膜沉积
溅镀：利用等离子体中的离子，对被溅镀物体电极
（即：靶材）轰击，使靶面原子脱离靶材运动到 圆片表面沉积成膜 特点：杂质少，成份稳定； 阶梯覆盖性（step coverage）差
• 在金属多晶膜中，金属离子的传输主要是沿晶界 进行的，加入Cu后，Cu原子与Al晶界缺陷的相互 作用，这种相互作用表现在以溶质原子本身或以 CuAl2形式在晶界处沉淀，占据了晶界处的空位。 由于可供Al原子扩散的晶界空位点大大减少，或 者说Al在CuAl2中的扩散系数小，从而改善了电迁 移。 CSMC Confidential /bbs
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CSMC Confidential
电迁移
From:
• 电迁移现象是一种在大电流密度作用下的 Al原子发生迁移的现象，会使Al导线断 路。 • Al中加入少量的Cu可以改善电迁移现象， 一般为0.5-4%(wt%)；但过份加入Cu会使 Al膜电阻率升高以及使Al刻蚀有难度。