IXGT40N60B中文资料

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IXBH42N170中文资料

VC E - Volts
Fig. 4. De pende nce of VCE(sat) on Tem perature
1.8
1.7
VGE = 15V
1.6
1.5
IC = 84A
1.4
1.3
1.2
IC = 42A
1.1
1.0
0.9
0.8
IC = 21A
0.7 -50 -25
0 25 50 75 100 125 150
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,710,405B2 6,710,463
6,727,585 6,759,692
元器件交易网
VF
IF = IC90, VGE = 0 V, Pulse test, t < 300 us, duty cycle d < 2%
IRM trr
IF = 25A, VGE = 0 V, -diF/dt = 50 A/us vR = 100V
3.0 V
24
A
360
ns
Min Recommended Footprint
8
7
IC = 84A 42A
21A 6
5
4
3
2 5 6 7 8 9 10 11 12 13 14 15 16 17
VG E - Volts
VC E - Volts
© 2004 IXYS All rights reserve
V C E (sat)- Normalized

40n60场效应管参数

40n60场效应管参数摘要：I.引言- 场效应管简介- 40n60 场效应管参数的重要性II.40n60 场效应管参数详解- 漏极电压(Vds)- 源极电压(Vgs)- 栅极电流(Ig)- 耗尽模式与增强模式III.40n60 场效应管的应用领域- 电源管理- 通信设备- 汽车电子- 工业控制IV.结论- 40n60 场效应管参数对于电子设备性能的影响- 未来发展趋势与挑战正文：I.引言场效应管（FET）是一种半导体器件，广泛应用于各种电子设备中。

在众多场效应管型号中，40n60 场效应管因为其优良的性能而受到广泛关注。

了解40n60 场效应管的参数对于正确选择和使用该型号器件至关重要。

本文将详细介绍40n60 场效应管的主要参数，并探讨其在不同领域的应用。

II.40n60 场效应管参数详解1.漏极电压(Vds)漏极电压是指在漏极和源极之间的电压。

40n60 场效应管的Vds 参数决定了其能够承受的最大电压。

在实际应用中，根据电路需求选择合适的Vds 值可以保证场效应管的正常工作。

2.源极电压(Vgs)源极电压是指在源极和栅极之间的电压。

40n60 场效应管的Vgs 参数影响了栅极对源极的导电能力。

合适的Vgs 值能够确保场效应管具有较高的导电性能。

3.栅极电流(Ig)栅极电流是指流过栅极的电流。

40n60 场效应管的Ig 参数反映了器件的驱动能力。

在选择器件时，需要根据实际应用场景选择合适的Ig 值。

4.耗尽模式与增强模式40n60 场效应管有两种工作模式：耗尽模式和增强模式。

耗尽模式下，漏极电压较低，源极电压较高；增强模式下，漏极电压较高，源极电压较低。

根据不同应用场景的需求，选择合适的工作模式能够优化器件性能。

III.40n60 场效应管的应用领域1.电源管理40n60 场效应管在电源管理领域具有广泛应用，如用于开关电源、线性稳压器等。

其优良的性能可以有效提高电源系统的效率和稳定性。

2.通信设备在通信设备中，40n60 场效应管可用于放大、开关等功能。

极限交换机VDX6740和VDX6740T产品介绍说明书

VDX 674 0 T-1G Sw it ch
The VDX 674 0 T-1G ( Fig ure 3) offers 4 8 10 0 0 BA SE-T p ort s and t w o 4 0 Gb E QSFP+ p ort s. Each 4 0 Gb E p ort can b e b roken out int o four ind ep end ent 10 Gb E SFP+ p ort s, p rovid ing an ad d it ional eig ht 10 Gb E SFP+ p ort s for up link. A ll 4 8 10 0 0 BA SE-T p ort s can b e up g rad ed t o 4 8 10 GBA SE-T p ort s via t he Cap acit y on Dem and (CoD) soft w are license. Tw o 4 0 Gb E p ort s are enab led as p art of t he b ase license. The ad d it ional t w o 4 0 Gb E p ort s can b e up g rad ed via t he Port s on Dem and ( PoD) soft w are license.
- Meet s t od ay?s ap p licat ion d em and s w it h high perform ance and low latency
- Delivers line-rate t hroughput for all p ort s and p acket sizes
Dat a Sheet

40N60

IRFPS40N60K01/30/02 1PD - 94384SMPS MOSFETHEXFET ® Power MOSFETl Hard Switching Primary or PFC Switch l Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply l High Speed Power Switching l Motor DriveBenefitsApplicationsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamic dv/dt Ruggednessl Fully Characterized Capacitance and Avalanche Voltage and Currentl Enhanced Body Diode dv/dt Capability ParameterMax.UnitsI D @ T C = 25°C Continuous Drain Current, V GS @ 10V 40I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 24A I DMPulsed Drain Current 160P D @T C = 25°C Power Dissipation 570W Linear Derating Factor 4.5W/°C V GS Gate-to-Source Voltage± 30V dv/dt Peak Diode Recovery dv/dt 5.5V/nsT J Operating Junction and-55 to + 150T STGStorage Temperature RangeSoldering Temperature, for 10 seconds 300(1.6mm from case )°CAbsolute Maximum RatingsSUPER TO-247ACAvalanche CharacteristicsSymbolParameterTyp.Max.UnitsE AS Single Pulse Avalanche Energy –––600mJ I AR Avalanche Current–––40A E ARRepetitive Avalanche Energy–––57mJSymbolParameterTyp.Max.UnitsR θJC Junction-to-Case–––0.22R θCS Case-to-Sink, Flat, Greased Surface 0.24–––°C/WR θJAJunction-to-Ambient–––40Thermal ResistanceV DSSR DS(on) typ.I D600V0.110 Ω40AIRFPS40N60KStatic @ T = 25°C (unless otherwise specified)Repetitive rating; pulse width limited bymax. junction temperature. (See Fig. 11)I SD ≤ 38A, di/dt ≤ 150A/µs, V DD ≤ V (BR)DSS ,T J ≤ 150°CNotes:Starting T J = 25°C, L = 0.84mH, R G = 25Ω,I AS = 38A, dv/dt =5.5V/ns (See Figure 12a)Pulse width ≤ 300µs; duty cycle ≤ 2%.C oss eff. is a fixed capacitance that gives the same charging timeas C oss while V DS is rising from 0 to 80% V DSSIRFPS40N60K 3Vs. TemperatureFig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics V DS , Drain-to-Source Voltage (V)I , D r a i n -t o -S o u r c e C u r r e n t (A )V DS , Drain-to-Source Voltage (V)I D , D r a i n -t o -S o u r c e C u r r e n t (A )IRFPS40N60KFig 8. Maximum Safe Operating AreaGate-to-Source VoltageDrain-to-Source VoltageForward Voltage10100100010000100000C , C a p a c i t a n c e (p F )110100100010000V DS , Drain-toSource Voltage (V)0.11101001000I D , D r a i n -t o -S o u r c e C u r r e n t (A )IRFPS40N60K 5Fig 10a.Switching Time Test CircuitV V d(on)r d(off)fFig 10b. Switching Time WaveformsV DDCase TemperatureIRFPS40N60K6VDSCurrent Sampling ResistorsV GS Fig 13a. Gate Charge Test Circuit Fig 13b. Basic Gate Charge WaveformVs. Drain CurrentFig 12d. Unclamped Inductive WaveformsFig 12c. Unclamped Inductive Test CircuitI ASV D DFig 14. Threshold Voltage Vs. TemperatureT J , Temperature ( °C )V G S (t h ) G a t e t h r e s h o l d V o l t a g e (V )IRFPS40N60K 7Fig 14. For N-Channel HEXFET ® Power MOSFETs* V GS = 5V for Logic Level DevicesPeak Diode Recovery dv/dt Test CircuitV DDIRFPS40N60KData and specifications subject to change without notice.This product has been designed and qualified for the Industrial market.Qualification Standards can be found on IR ’s Web site.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information .01/02SUPER TO-247AC Package OutlineDimensions are shown in millimeters (inches)。

IXFN40N60中文资料

1 - 2© 2000 IXYS All rights reservedminiBLOC, SOT-227 B (IXFN) E153432Features·International standard packages ·Encapsulating UL 94 V-0, flammability classification ·miniBLOC isolation·Low R DS (on)·Rugged polysilicon gate cell structure ·Unclamped Inductive Switching (UIS)rated·Low package inductance ·Fast intrinsic RectifierApplications·DC-DC converters·Synchronous rectification ·Battery chargers·Switched-mode and resonant-mode power supplies ·DC choppers·Temperature and lighting controls ·Low voltage relays Advantages ·Easy to mount ·Space savings ·High power densityG = Gate S = SourceEither Source terminal at miniBLOC can be used as Main or Kelvin SourceSymbol Test ConditionsCharacteristic Values (T J = 25°C, unless otherwise specified)Min.Max.V DSS V GS = 0 V, I D = 3mA 600V V GH(th)V DS = V GS , I D = 8mA 24V I GSS V GS = ±20 V GE = 0±200nAI DSS V DS = 0.8 • V DSS V T J = 25 °C 400 m A V GS = 0 VT J = 125 °C 2mA R DS(on)V GS = 10 V, I D = 0.5 • I D2543N600.13 W Pulse test, t £ 300 ms,40N600.15 Wduty cycle d £ 2 %97503 A(7/97)IXYS reserves the right to change limits, test conditions, and dimensions.2 - 2© 2000 IXYS All rights reservedSymbol Test ConditionsCharacteristic Values (T J = 25°C, unless otherwise specified)Min.Typ.Max.g fs V DS = 10 V; I D = 0.5 • I D25, pulse testTBD S C iss TBD pF C oss V GS = 0 V, V DS = 25 V, f = 1 MHz TBD pF C rss TBD pF t d(on)TBD ns t r V GS = 10 V, V DS = 0.5 • V DSS , I D = 0.5 • I D25TBD ns t d(off)R G = 1 Ω (External),TBD ns t f TBD ns Q g(on)TBD nC Q gs V GS = 10 V, V DS = 0.5 • V DSS , I D = 0.5 • I D25TBD nC Q gd TBDnC R thJC TO-264 AA 0.22K/W R thCK TO-264 AA0.15K/W R thJC miniBLOC, SOT-227 B 0.21K/W R thCKminiBLOC, SOT-227 B0.05K/WSource-Drain Diode(T J = 25°C, unless otherwise specified)Characteristic Values Symbol Test Conditions Min.Typ.Max.I S V GS = 043N6043A 40N6040A I SM Repetitive;43N60172A pulse width limited by T JM40N60160A V SD I F = 100 A, V GS = 0 V,1.5V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %t rr TBD ns Q RM I F = 50 A, -di/dt = 100 A/µs, V R = 100 V TBD µC I RMTBDANotes: 1.R GS = 1 M Ω2.Pulse width limited by T JM.Millimeter InchesMin.Max.Min.Max.4.82 5.13.190.2022.54 2.89.100.1142.00 2.10.079.0831.12 1.42.044.0562.39 2.69.094.1062.90 3.09.114.1220.530.83.021.03325.9126.16 1.020 1.03019.8119.96.780.7865.46 BSC .215 BSC 0.000.25.000.0100.000.25.000.01020.3220.83.800.8202.29 2.59.090.1023.17 3.66.125.1446.07 6.27.239.2478.388.69.330.3423.81 4.32.150.1701.78 2.29.070.0906.04 6.30.238.2481.57 1.83.062.072M4 screws (4x) suppliedMillimeter Inches Min.Max.Min.Max.31.5031.88 1.240 1.2557.808.200.3070.3234.09 4.290.1610.169 miniBLOC, SOT-227 BIXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7154,850,0724,931,8445,034,7965,063,3075,237,4815,381,025。

IXEN60N120中文资料

C D E F G H J K L M N O P Q
Symbol
Characteristic Values min. typ. max. 0.1 30 K/W g
R S T U V W
RthCH Weight
with heatsink compound
© 2002 IXYS All rights reserved
110 60 40 200 40
M4 screws (4x) supplied
Component Symbol TVJ Tstg VISOL MD IISOL ≤ 1 mA; 50/60 Hz mounting torque teminal connection torque Conditions (M4) (M4) Conditions Maximum Ratings -40...+150 -40...+150 2500 1.5 1.5 °C °C V~ Nm Nm
元器件交易网
Advanced Technical Information
NPT3 IGBT
in miniBLOC package
IC25 IXEN 60N120 IXEN 60N120D1 VCES VCE(sat) typ.
C C G
= 100 A = 1200 V = 2.1 V
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.1 2.5 4.5 0.1 200 150 60 700 50 7.2 6.0 3.8 500 2.7 6.5 0.1 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.28 K/W

IXYS IXTK 21N100 IXTN 21N100 说明书

Symbol Test Conditions Maximum Ratings IXTK IXTN V DSS TJ = 25°C to 150°C10001000V V DGR T J = 25°C to 150°C; R GS = 1 M Ω10001000V V GS Continuous ±20±20V V GSM Transient±30±30V I D25T C = 25°C, Chip capability2121A I DM T C = 25°C, pulse width limited by T JM 8484A P D T C = 25°C500520W T J -55 ... +150°C T JM 150°C T stg -55 ... +150°C T L 1.6 mm (0.063 in) from case for 10 s 300-°C V ISOL 50/60 Hz, RMS t = 1 min -2500V~I ISOL ≤ 1 mAt = 1 s-3000V~M d Mounting torque0.9/61.5/13Nm/lb.in.Terminal connection torque - 1.5/13Nm/lb.in.Weight1030gIXTK 21N100V DSS =1000 VIXTN 21N100I D25=21 A R DS(on)=0.55 ΩTO-264 AA (IXTK)SGD DSGSG = Gate D = Drain S = Source TAB = DrainEither Source terminal at miniBLOC can be used as Main or Kelvin SourceSGSDN-Channel, Enhancement ModeSymbolTest ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.V DSS V GS = 0 V, I D = 6 mA 1000V V GH(th)V DS = V GS , I D = 500 µA 24.5V I GSS V GS = ±20 V DC , V DS = 0±200nA I DSS V DS = 0.8 • V DSS T J = 25°C 500µA V GS = 0 VT J = 125°C2mA R DS(on)V GS = 10 V, I D = 0.5 • I D250.55ΩPulse test, t ≤ 300 µs, duty cycle d ≤ 2 %92808I(5/97)Featuresl International standard packageslJEDEC TO-264, epoxy meet UL 94 V-0flammability classificationlminiBLOC, (ISOTOP-compatible) with Aluminium nitride isolationl Low R DS (on) HDMOS TM processl Rugged polysilicon gate cell structure lLow package inductanceApplicationsl DC-DC convertersl Synchronous rectification l Battery chargerslSwitched-mode and resonant-mode power supplies l DC chopperslTemperature and lighting controlsAdvantagesl Easy to mount l Space savings lHigh power densityD (TAB)miniBLOC, SOT-227 B E153432High Voltage MegaMOS TM FETsIXYS reserves the right to change limits, test conditions, and dimensions.SymbolTest ConditionsCharacteristic Values(T= 25°C, unless otherwise specified)TO-264 AA OutlineMillimeter InchesMin.Max.Min.Max.A 4.82 5.13.190.202A1 2.54 2.89.100.114A2 2.00 2.10.079.083b 1.12 1.42.044.056b1 2.39 2.69.094.106b2 2.90 3.09.114.122c 0.530.83.021.033D 25.9126.16 1.020 1.030E 19.8119.96.780.786e 5.46 BSC .215 BSC J 0.000.25.000.010K 0.000.25.000.010L 20.3220.83.800.820L1 2.29 2.59.090.102P 3.17 3.66.125.144Q 6.07 6.27.239.247Q18.388.69.330.342R 3.81 4.32.150.170R1 1.78 2.29.070.090S 6.04 6.30.238.248T1.57 1.83.062.072Dim.Fig. 1Output CharacteristicsFig. 2Input AdmittanceFig. 3R DS(on) vs. Drain CurrentFig. 4Temperature Dependenceof Drain to Source ResistanceFig. 5Drain Current vs.Fig. 6Temperature Dependence ofCase TemperatureBreakdown and Threshold VoltageT J - Degrees C-50-25255075100125150B V /V G (t h ) - N o r m a l i z e d0.50.60.70.80.91.01.11.2V GS(th)T C - Degrees C -50-25255075100125150I D - A m p e r e s0510152025T J - Degrees C-50-25255075100125150R D S (o n ) - N o r m a l i z e d0.500.751.001.251.501.752.002.252.50I D - Amperes 05101520253035404550R D S (o n ) - N o r m a l i z e d0.91.01.11.21.31.41.5V GS - Volts012345678910I D - A m p e r e s510152025303540V DS - Volts 05101520I D - A m p e r e s5101520253035406VBV DSS5VV GS = 10VT J = 25°CFig.7Gate Charge Characteristic CurveFig.8Capacitance CurvesFig.10 Transient Thermal ImpedanceFig.9Source Current vs. Sourceto Drain VoltagePulse Width - Seconds0.00010.0010.010.1110R (t h )J C - K /W0.0010.010.11V SD - Volts0.00.20.40.60.8 1.0 1.2 1.4I D - A m p e r e s0510********3540V DS - Volts05101520C a p a c i t a n c e - p F100020003000400050006000700080009000C rssC oss Gate Charge - nCoulombs50100150200250300V G S - V o l t s012345678910C issf = 1 MHz V DS = 25V。

IXGH40N60中文资料

© 1996 IXYS All rights reservedTO-247 AD (IXGH)V CESI C25V CE(sat)Low V CE(sat) IGBT IXGH/IXGM 40 N60600 V 75 A 2.5 V High speed IGBTIXGH/IXGM 40 N60A600 V75 A3.0 VGCESymbol Test Conditions Maximum RatingsV CES T J = 25°C to 150°C600V V CGR T J = 25°C to 150°C; R GE = 1 M Ω600V V GES Continuous ±20V V GEM Transient±30V I C25T C = 25°C, limited by leads 75A I C90T C = 90°C 40A I CMT C = 25°C, 1 ms150A SSOA V GE = 15 V, T VJ = 125°C, R G = 22 Ω I CM = 80A (RBSOA)Clamped inductive load, L = 30 µH @ 0.8 V CESP C T C = 25°C250W T J -55 ... +150°C T JM 150°C T stg -55 ... +150°CM d Mounting torque (M3) 1.13/10Nm/lb.in.WeightTO-204 = 18 g, TO-247 = 6 gMaximum lead temperature for soldering 300°C1.6 mm (0.062 in.) from case for 10 sSymbol Test ConditionsCharacteristic Values(T J= 25°C, unless otherwise specified)min.typ.max.BV CES I C = 250 µA, V GE = 0 V 600V V GE(th)I C= 250 µA, V CE = V GE2.55V I CES V CE = 0.8 • V CES T J = 25°C 200µA V GE = 0 VTJ = 125°C1mA I GES V CE = 0 V, V GE = ±20 V ±100nA V CE(sat)I C= I C90, V GE = 15 V40N60 2.5V 40N60A3.0VTO-204 AE (IXGM)CG = Gate, C = Collector,E = Emitter,TAB = CollectorFeaturesl International standard packages l 2nd generation HDMOS TM process l Low V CE(sat)-for low on-state conduction losses l High current handling capability l MOS Gate turn-on -drive simplicitylVoltage rating guaranteed at high temperature (125°C)Applicationsl AC motor speed control l DC servo and robot drives l DC choppersl Uninterruptible power supplies (UPS)lSwitch-mode and resonant-mode power suppliesAdvantageslEasy to mount with 1 screw (TO-247)(isolated mounting screw hole)lHigh power density91513E (3/96)IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7154,850,0724,931,8445,034,7965,063,3075,237,4815,381,025IXYS reserves the right to change limits, test conditions, and dimensions.SymbolTest ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.g fs I C = I C90; V CE = 10 V,2535S Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %C ies 4500pF C oes V CE = 25 V, V GE = 0 V, f = 1 MHz300pF C res 60pF Q g 200250nC Q ge I C = I C90, V GE = 15 V, V CE = 0.5 V CES 4580nC Q gc 88120nC t d(on)100ns t ri 200ns t d(off)600ns t fi 40N60A 200ns E off 40N60A 3mJ t d(on)100ns t ri 200ns E on 4mJ t d(off)6001000ns t fi 40N606002000ns 40N60A 300800ns E off 40N6012mJ 40N60A6mJ R thJC 0.5K/WR thCK0.25K/WInductive load, T J = 25°CI C = I C90, V GE = 15 V, L = 100 µH V CE = 0.8 V CES , R G = R off = 22 ΩSwitching times may increasefor V CE (Clamp) > 0.8 • V CES ,higher T J or increased R GInductive load, T J = 125°C I C = I C90, V GE = 15 V,L = 100 µH V CE = 0.8 V CES ,R G = R off = 22 ΩRemarks: Switching times may increase for V CE(Clamp) > 0.8 • V CES , higher T J or increased R GFig. 1Saturation CharacteristicsFig.7Gate Charge。

2N60B中文资料

Rev. B, November 2001
SSW2N60B / SSI2N60B
元器件交易网
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ
Max
Units
--
2.32
°C/W
--
40
°C/W
--
62.5
°C/W
©2001 Fairchild Semiconductor Corporation
(Note 4, 5) --
16 50 40 40 12.5 2.2 5.4
--10 100 100 -100
4.0 5.0 --
490 46 9.9
40 110 90 90 17 ---
V V/°C µA µA nA nA
V Ω S
pF pF pF
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

INFINEON IKP10N60T 数据手册

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technologywith soft, fast recovery anti-parallel EmCon HE diode•Very low V CE(sat) 1.5 V (typ.)•Maximum Junction Temperature 175 °C•Short circuit withstand time – 5µs•Designed for :- Variable Speed Drive for washing machines, airconditioners and induction cooking- Uninterrupted Power Supply• TrenchStop® and Fieldstop technology for 600 V applicationsoffers :- very tight parameter distribution- high ruggedness, temperature stable behavior•NPT technology offers easy parallel switching capability due topositive temperature coefficient in V CE(sat)• Low EMI•Low Gate Charge•Very soft, fast recovery anti-parallel EmCon HE diode•Qualified according to JEDEC1 for target applications•Pb-free lead plating; RoHS compliant•Complete product spectrum and PSpice Models :/igbt/Type V CE I C V CE(sat),Tj=25°C T j,max MarkingCode PackageIKP10N60T 600V 10A 1.5V 175°C K10T60 PG-TO-220-3-1Maximum RatingsParameter SymbolValueUnit Collector-emitter voltage V C E600 VDC collector current, limited by T jmax T C = 25°CT C = 100°C I C2010Pulsed collector current, t p limited by T jmax I C p u l s30 Turn off safe operating area V CE ≤ 600V, T j≤ 175°C -30Diode forward current, limited by T jmax T C = 25°CT C = 100°C I F2010Diode pulsed current, t p limited by T jmax I F p u l s30AGate-emitter voltage V G E±20 VShort circuit withstand time2)V GE = 15V, V CC ≤ 400V, T j≤ 150°Ct S C 5 µsPower dissipation T C = 25°C P t o t110 W Operating junction temperature T j-40...+175Storage temperature T s t g-55...+175Soldering temperature,wavesoldering, 1.6 mm (0.063 in.) from case for 10s 260°C1 J-STD-020 and JESD-0222) Allowed number of short circuits: <1000; time between short circuits: >1s.PG-TO-220-3-1Thermal Resistance Parameter Symbol Conditions Max. Value UnitCharacteristicIGBT thermal resistance, junction – caseR t h J C1.35 Diode thermal resistance, junction – case R t h J C D 1.9 Thermal resistance, junction – ambient R t h J A 62K/WElectrical Characteristic, at T j = 25 °C, unless otherwise specifiedValueParameter Symbol Conditions min. typ. max. UnitStatic CharacteristicCollector-emitter breakdown voltage V (B R )C E S V G E =0V, I C =0.2mA 600 - - Collector-emitter saturation voltageV C E (s a t )V G E = 15V, I C =10A T j =25°C T j =175°C- - 1.5 1.8 2.05 - Diode forward voltageV FV G E =0V, I F =10A T j =25°C T j =175°C- - 1.6 1.6 2.0 - Gate-emitter threshold voltage V G E (t h ) I C =0.3mA,V C E =V G E 4.1 4.6 5.7V Zero gate voltage collector currentI C E S V C E =600V , V G E =0V T j =25°C T j =175°C- -- -40 1000µAGate-emitter leakage current I G E S V C E =0V,V G E =20V - - 100 nA Transconductance g f s V C E =20V, I C =10A - 6 - S Integrated gate resistor R G i n tnone ΩDynamic Characteristic Input capacitance C i s s - 551 - Output capacitanceC o s s - 40 - Reverse transfer capacitance C r s s V C E =25V, V G E =0V, f =1MHz - 17 - pF Gate chargeQ G a t eV C C =480V, I C =Fehler!Verweisquelle konnte nicht gefunden werden.A V G E =15V- 62 - nCInternal emitter inductancemeasured 5mm (0.197 in.) from case L E - 7 - nH Short circuit collector current 1)I C (S C )V G E =15V,t S C ≤5µs V C C = 400V, T j = 25°C- 100 - ASwitching Characteristic, Inductive Load, at T j =25 °CValueParameter Symbol Conditions min. typ. max. UnitIGBT Characteristic Turn-on delay time t d (o n ) - 12 - Rise timet r - 8 - Turn-off delay time t d (o f f ) - 215 - Fall time t f - 38 - ns Turn-on energy E o n - 0.16 - Turn-off energy E o f f - 0.27 - Total switching energyE t sT j =25°C,V C C =400V,I C =10A,V G E =0/15V, R G =23Ω, L σ2)=60nH, C σ2)=40pFEnergy losses include “tail” and diode reverse recovery.- 0.43 -mJ Anti-Parallel Diode Characteristic Diode reverse recovery time t r r - 115 - ns Diode reverse recovery charge Q r r - 0.38 - µC Diode peak reverse recovery current I r r m- 10 - A Diode peak rate of fall of reverse recovery current during t bdi r r /dtT j =25°C,V R =400V, I F =10A, di F /dt =880A/µs- 680 - A/µsSwitching Characteristic, Inductive Load, at T j =175 °CValueParameter Symbol Conditions min. typ. max. UnitIGBT Characteristic Turn-on delay time t d (o n ) - 10 - Rise timet r - 11 - Turn-off delay time t d (o f f ) - 233 - Fall time t f - 63 - ns Turn-on energy E o n - 0.26 - Turn-off energy E o f f - 0.35 - Total switching energyE t s T j =175°C,V C C =400V,I C =10A,V G E =0/15V, R G = 23Ω L σ1)=60nH, C σ1)=40pFEnergy losses include “tail” and diode reverse recovery. - 0.61 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time t r r - 200 - ns Diode reverse recovery charge Q r r - 0.92 - µC Diode peak reverse recovery current I r r m- 13 - A Diode peak rate of fall of reverse recovery current during t b di r r /dtT j =175°CV R =400V, I F =10A, di F /dt =880A/µs- 390 - A/µs1) Allowed number of short circuits: <1000; time between short circuits: >1s.2)Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. 1)Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E.I C , C O L L E C T O R C U R R E N T10Hz100Hz1kHz10kHz100kHz0A5A 10A 15A 20A 25A 30AI C , C O L L E C T O R C U R R E N T1V10V100V 1000V0,1A1A10Af , SWITCHING FREQUENCYV CE , COLLECTOR -EMITTER VOLTAGEFigure 1. Collector current as a function ofswitching frequency(T j ≤ 175°C, D = 0.5, V CE = 400V, V GE = 0/+15V, R G = 23Ω) Figure 2. Safe operating area(D = 0, T C = 25°C, T j ≤175°C; V GE =15V)P t o t , P O W E R D I S S I P A T I O N25°C50°C 75°C 100°C 125°C 150°C0W 20W40W60W80W100W120WI C , C O L L E C T O R C U R R E N T0A10A20A30AT C , CASE TEMPERATURET C , CASE TEMPERATUREFigure 3. Power dissipation as a function ofcase temperature (T j ≤ 175°C)Figure 4. Collector current as a function ofcase temperature(V GE ≥ 15V, T j ≤ 175°C)I C , C O L L E C T O R C U R R E N T0V1V2V3V4V0A5A 10A 15A 20A25A30AI C , C O L L E C T O R C U R R E N T0V1V2V3V 4V 5V0A5A10A15A20A25A30AV CE , COLLECTOR -EMITTER VOLTAGEV CE , COLLECTOR -EMITTER VOLTAGEFigure 5. Typical output characteristic(T j = 25°C)Figure 6. Typical output characteristic(T j = 175°C)I C , C O L L E C T O RC U R R E N T0A5A10A15A20A25AV C E (s a t ), C O L L E C T O R -E M I T T S A T U R A T I O N V O L T A G E-50°C0°C 50°C 100°C 150°C0,0V0,5V 1,0V 1,5V 2,0V 2,5V 3,0VV GE , GATE-EMITTER VOLTAGET J , JUNCTION TEMPERATUREFigure 7. Typical transfer characteristic(V CE =20V)Figure 8. Typical collector-emittersaturation voltage as a function of junction temperature (V GE = 15V)t , S W I T C H I N GT I M E S0A5A10A15A20At , S W I T C H I N GT I M E S10Ω20Ω30Ω40Ω50ΩI C , COLLECTOR CURRENTR G , GATE RESISTORFigure 9. Typical switching times as afunction of collector current (inductive load, T J =175°C,V CE = 400V, V GE = 0/15V, R G = 23Ω, Dynamic test circuit in Figure E) Figure 10. Typical switching times as afunction of gate resistor (inductive load, T J = 175°C,V CE = 400V, V GE = 0/15V, I C = 10A, Dynamic test circuit in Figure E)t , S W I T C H I N G T IM E S25°C50°C75°C100°C 125°C 150°CV G E (t h ), G A T E -E M I T T T R S H O L DV O L T A G E-50°C0°C 50°C 100°C 150°CT J , JUNCTION TEMPERATURET J , JUNCTION TEMPERATUREFigure 11. Typical switching times as afunction of junction temperature (inductive load, V CE = 400V, V GE = 0/15V, I C = 10A, R G =23Ω, Dynamic test circuit in Figure E)Figure 12. Gate-emitter threshold voltage asa function of junction temperature (I C = 0.3mA)E , S W I T C H I N G E N E R G Y L O S S E S0A5A 10A 15A0,0m0,2m 0,4m 0,6m 0,8m 1,0m E , S W I T C H I N G E N E R G Y L O S S E S10Ω20Ω30Ω40Ω50ΩI C , COLLECTOR CURRENTR G , GATE RESISTORFigure 13. Typical switching energy lossesas a function of collector current (inductive load, T J = 175°C,V CE = 400V, V GE = 0/15V, R G = 23Ω, Dynamic test circuit in Figure E) Figure 14. Typical switching energy lossesas a function of gate resistor (inductive load, T J = 175°C,V CE = 400V, V GE = 0/15V, I C = 10A, Dynamic test circuit in Figure E)E , S W I T C H I N G E N E R G Y L O S S E SE , S W I T C H I N G E N E R G Y L O S S E S0,0m 0,2m 0,4m 0,6m 0,8mT J , JUNCTION TEMPERATUREV CE , COLLECTOR -EMITTER VOLTAGEFigure 15. Typical switching energy lossesas a function of junction temperature(inductive load, V CE = 400V,V GE = 0/15V, I C = 10A, R G = 23Ω, Dynamic test circuit in Figure E)Figure 16. Typical switching energy lossesas a function of collector emitter voltage(inductive load, T J = 175°C,V GE = 0/15V, I C = 10A, R G = 23Ω, Dynamic test circuit in Figure E)V G E , G A T E -E M I T T E R V O L T A G E0V5V10V15Vc , C A PA C I T A N C EQ GE , GATE CHARGEV CE , COLLECTOR -EMITTER VOLTAGEFigure 17. Typical gate charge(I C =10 A)Figure 18. Typical capacitance as a functionof collector-emitter voltage (V GE =0V, f = 1 MHz)I C (s c ), s h o r t c i r c u i t C O L L E C T O R C U R R E N T12V14V 16V 18V0A 25A 50A 75A 100A 125A 150A t S C , S H O R T C I R C U I T WI T H S T A N D T I M E10V11V 12V 13V 14V0µs2µs4µs6µs8µs10µs12µsV GE , GATE -EMITTETR VOLTAGEV GE , GATE -EMITETR VOLTAGEFigure 19. Typical short circuit collectorcurrent as a function of gate-emitter voltage(V CE ≤ 400V, T j ≤ 150°C)Figure 20. Short circuit withstand time as afunction of gate-emitter voltage (V CE =600V , start at T J =25°C, T Jmax <150°C)Z t h J C , T R A N S I E N T T H E R M A L R E S I S T A N C E10µs100µs 1ms 10ms 100ms10-2K/W10-1K/W100K/WZ t h J C , T R A N S I E N T T H E R M A L R E S I S T A N C E1µs10µs 100µs 1ms 10ms 100ms10-210-1100t P , PULSE WIDTHt P , PULSE WIDTHFigure 21. IGBT transient thermal resistance(D = t p / T )Figure 22. Diode transient thermalimpedance as a function of pulse width (D =t P /T )t r r , R E V E R S E R E C O V E R Y T I M E0ns50ns 100ns150ns 200ns 250ns 300nsQ r r , R E V E R S E R E C O V E R Y C H A R G E200A/µs400A/µs 600A/µs 800A/µs0,0µC0,1µC0,2µC 0,3µC 0,4µC 0,5µC 0,6µC 0,7µC 0,8µCdi F /dt , DIODE CURRENT SLOPEdi F /dt , DIODE CURRENT SLOPEFigure 23. Typical reverse recovery time asa function of diode current slope (V R =400V, I F =10A,Dynamic test circuit in Figure E)Figure 24. Typical reverse recovery chargeas a function of diode current slope(V R = 400V, I F = 10A,Dynamic test circuit in Figure E)I r r , R E V E R S E R E C O V E R Y C U R RE N T200A/µs 400A/µs 600A/µs 800A/µs0A2A 4A 6A 8A 10A 12A 14Ar r D I O D E P E A K R A T E O F F A L L O F R E V E R S E R E C O V E R Y C U R RE N Tdi F /dt , DIODE CURRENT SLOPEdi F /dt , DIODE CURRENT SLOPEFigure 25. Typical reverse recovery currentas a function of diode current slope(V R = 400V, I F = 10A,Dynamic test circuit in Figure E) Figure 26. Typical diode peak rate of fall ofreverse recovery current as a function of diode current slope (V R =400V, I F =10A,Dynamic test circuit in Figure E)I F , F O R W A R DC U R R E N T0V 1V 2V0A10A20A30AV F , F O R W A R D V O L T A GE-50°C0°C 50°C 100°C 150°C0,0V 0,5V1,0V1,5V2,0VV F , FORWARD VOLTAGET J , JUNCTION TEMPERATUREFigure 27. Typical diode forward current asa function of forward voltageFigure 28. Typical diode forward voltage as afunction of junction temperaturePG-TO-220-3-1Leakage inductance Lσ =60nH and Stray capacity Cσ =40pF.Edition 2006-01Published byInfineon Technologies AG81726 München, Germany© Infineon Technologies AG 9/12/07.All Rights Reserved.Attention please!The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ().WarningsDue to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to supportand/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.。

SUP40N25-60中文资料

FEATURESD TrenchFET r Power MOSFETS D 175_C Junction TemperatureD New Low Thermal Resistance PackageAPPLICATIONSD IndustrialSUP40N25-60Vishay SiliconixNew ProductDocument Number: 73132S-42076—Rev. A, 15-Nov-041N-Channel 250-V (D-S) 175_C MOSFETPRODUCT SUMMARYV (BR)DSS (V)r DS(on) (W )I D (A)Q g (Typ)0.060 @ V GS= 10 V 402500.064 @ V GS = 6 V38.795TO-220ABTop ViewG D S Ordering Information: SUP40N25-60—E3N-Channel MOSFETGDABSOLUTE MAXIMUM RATINGS (T C = 25_C UNLESS OTHERWISE NOTED)ParameterSymbolLimitUnitDrain-Source Voltage V DS 250Gate-Source VoltageV GS "30VT C = 25_C 40Continuous Drain Current (T J = 175_C)T C = 125_CI D 23Pulsed Drain Current I DM 70AAvalanche CurrentI AR 35Repetitive Avalanche Energy a L = 0.1 mH E AR 61mJ T C = 25_C 300b Maximum Power Dissipation aT A = 25_C c P D 3.75W Operating Junction and Storage Temperature RangeT J , T stg−55 to 175_CTHERMAL RESISTANCE RATINGSParameterSymbolLimitUnitJunction-to-Ambient (PCB Mount)c R thJA 40Junction-to-Case (Drain)R thJC0.5_C/WNotesa.Duty cycle v 1%.b.See SOA curve for voltage derating.c.When mounted on 1” square PCB (FR-4 material).SUP40N25-60Vishay SiliconixNew Product2Document Number: 73132S-42076—Rev. A, 15-Nov-04SPECIFICATIONS (T J =25_C UNLESS OTHERWISE NOTED)ParameterSymbol Test Condition Min Typ Max UnitStaticDrain-Source Breakdown Voltage V (BR)DSS V DS = 0 V, I D = 250 m A 250Gate-Threshold Voltage V GS(th)V DS = V GS , I D = 250 m A 24V Gate-Body LeakageI GSSV DS = 0 V, V GS = "30 V "250nAV DS = 250 V, V GS = 0 V1Zero Gate Voltage Drain Current I V DS = 250 V, V GS = 0 V, T J = 125_C 50A g DSS V DS = 250 V, V GS = 0 V, T J = 175_C250m On-State Drain Current aI D(on)V DS w 5 V, V GS = 10 V 70A V GS = 10 V, I D = 20 A0.0490.060Drain Source On State Resistance DS()V GS = 10 V, I D = 20 A, T J = 125_C 0.121Drain-Source On-State Resistance ar DS(on)V GS = 10 V, I D = 20 A, T J = 175_C0.163WV GS = 6 V, I D = 15 A,0.0510.064Forward Transconductance ag fsV DS = 15 V, I D = 20 A70S Dynamic bInput Capacitance C iss 5000Output CapacitanceC oss V GS = 0 V, V DS = 25 V, f = 1 MHz300pFReverse Transfer Capacitance C rss 170Total Gate Charge c Q g 95 140Gate-Source Charge c Q gs V = 125 V, V = 10 V, I = 45 A 28nC Gate-Drain Charge c Q gd DS ,GS ,D 34Gate Resistance R g f = 1 MHz1.6WTurn-On Delay Time c t d(on)2235Rise Time ct r V W220330Turn-Off Delay Time c t d(off)DD = 100 V, R L = 2.78 I D ^ 45 A, V GEN = 10 V, R g = 2.5 W4060ns Fall Time ct f145220Source-Drain Diode Ratings and Characteristics (T C = 25_C)bContinuous Current I S 45Pulsed Current I SM 70A Forward Voltage a V SD I F = 45 A, V GS = 0 V1.0 1.5V Reverse Recovery Time t rr 150225ns Peak Reverse Recovery Current I RM(REC)I F = 45 A, di/dt = 100 A/m s 1218A Reverse Recovery ChargeQ rr0.92m CNotesa.Pulse test; pulse width v 300 m s, duty cycle v 2%.b.Guaranteed by design, not subject to production testing.c.Independent of operating temperature.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.SUP40N25-60Vishay SiliconixNew ProductDocument Number: 73132S-42076—Rev. A, 15-Nov-04301000200030004000500060007000040801201602004812162030609012015018003060901201501020304050600.000.020.040.060.080.1020406080100123456246810CapacitanceGate ChargeTransconductanceOn-Resistance vs. Drain CurrentV DS − Drain-to-Source Voltage (V)V GS − Gate-to-Source Voltage (V)− G a t e -t o -S o u r c e V o l t a g e (V )Q g − Total Gate Charge (nC)I D − Drain Current (A)V DS − Drain-to-Source Voltage (V)C − C a p a c i t a n c e (p F )V G S − T r a n s c o n d u c t a n c e (S )g f s − O n -R e s i s t a n c e (r D S (o n )W )I D − Drain Current (A)SUP40N25-60Vishay SiliconixNew Product4Document Number: 73132S-42076—Rev. A, 15-Nov-04TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)0.40.81.21.62.02.42.8On-Resistance vs. Junction TemperatureSource-Drain Diode Forward Voltage(a )I D a v r D S (o n ) − O n -R e s i i s t a n c e (N o r m a l i z e d )SUP40N25-60Vishay SiliconixNew ProductDocument Number: 73132S-42076—Rev. A, 15-Nov-045THERMAL RATINGS01020304050255075100125150175Safe Operating Area, Case Temperature100100.111010000.001Maximum Avalanche and Drain Currentvs. Case TemperatureT C − Ambient Temperature (_C)− D r a i n C u r r e n t (A )I D Normalized Thermal Transient Impedance, Junction-to-CaseSquare Wave Pulse Duration (sec)210.10.0110−410−310−210−11N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e− D r a i n C u r r e n t (A )I D 11000.10.01V DS − Drain-to-Source Voltage (V)*V GS u minimum V GS at which r DS(on) is specifiedVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon T echnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?73132.Document Number: 91000Revision: 18-Jul-081DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。

士兰微 SGT40N60NPFDPN 说明书 40A、600V绝缘栅双极型晶体管说明书

40A 、600V 绝缘栅双极型晶体管描述SGT40N60NPFDPN 绝缘栅双极型晶体管采用新一代场截止（Field Stop ）工艺制作，具有低的导通损耗和开关损耗，正温度系数易于并联应用等特点。

该产品可应用于感应加热UPS ，SMPS 以及PFC 等领域。

特点♦ 40A ，600V ，V CE(sat)(典型值)=1.8V@I C =40A ♦ 低导通损耗 ♦ 超快开关速度 ♦高击穿电压命名规则SGT 40 N E 60 □□□□ PNIGBT 产品系列名称电流值,20表示20AN ChannelE:表示有带ESD空白:表示不带ESD电压值:120表示1200VNP:表示NPT 工艺 P: 表示PT 工艺T: 表示Trench 工艺空白: 表示非Trench 工艺 F: 表示采用了Field stop 工艺空白: 表示非采用Field stop 工艺 D: 表示内置了FRD 空白: 表示没有内置了FRD表示封装形式,如PN 表示TO-3P 封装形式产品规格分类产品名称封装形式打印名称材料包装 SGT40N60NPFDPNTO-3P40N60NPFD无铅料管极限参数 (除非特殊说明，T C =25°C)参数符号参数范围单位集电极-射极电压 V CE 600 V 栅极-射极电压V GE±20 V 集电极电流 T C =25°CI C 80 A T C =100°C40 集电极脉冲电流 I CM 120 A 耗散功率（T C =25°C ） - 大于25°C 每摄氏度减少 P D 290 W 2.32 W/°C 工作结温范围 T J -55～+150 °C 贮存温度范围 T stg -55～+150°C热阻特性参数符号参数范围单位芯片对管壳热阻（IGBT）RθJC0.24 °C/W 芯片对管壳热阻（FRD）RθJC 1.4 °C/W 芯片对环境的热阻RθJA35.5 °C/WIGBT电性参数(除非特殊说明，TC=25°C)参数符号测试条件最小值典型值最大值单位集射击穿电压BV CE V GE=0V,I C=250uA 600 -- -- V 集射漏电流I CES V CE=600V,V GE=0V -- -- 200 uA 栅射漏电流I GES V GE=20V,V CE=0V -- -- ±500 nA 栅极开启电压V GE(th)I C=250μA,V CE=V GE 4.0 5.0 6.5 V 饱和压降V CE(sat)I C=40A,V GE=15V -- 1.8 2.7 VI C=40A, V GE=15V, T C=125°C -- 2.1 -- V输入电容C ies VCE=30VV GE=0Vf=1MHz -- 1850 --pF输出电容C oes-- 180 -- 反向传输电容C res-- 50 --开启延迟时间T d(on)V CE=400VI C=40AR g=10ΩV GE=15V感性负载-- 18 --ns开启上升时间T r-- 80 --关断延迟时间T d(off)-- 110 --关断下降时间T f-- 105 --导通损耗E on-- 1.87 --mJ 关断损耗E off-- 0.68 --开关损耗E st-- 2.55 --栅电荷Q gV CE = 300V, I C=20A,V GE = 15V -- 100 --nC发射极栅电荷Q ge-- 11 --集电极栅电荷Q gc-- 52 --FRD电性参数(除非特殊说明，T C=25°C)参数符号测试条件最小值典型值最大值单位二极管正向压降V fm I F = 20A T C=25°C -- 1.9 2.6V I F = 20A T C=125°C -- 1.5 --二极管反向恢复时间T rr I ES =20A, dI ES/dt = 200A/μs-- 32 -- ns 二极管反向恢复电荷Q rr I ES =20A, dI ES/dt = 200A/μs-- 74 -- nC典型特性曲线图1. 典型输出特性集电极电流 – I C (A )0401201.53.06.0集电极-发射极电压 – V CE (V)集电极电流 – I C (A )集电极-发射极电压 – V CE (V)图3. 典型饱和电压特性802060100 4.5图2. 典型输出特性集电极电流 – I C (A )401200 1.5 3.0 6.0集电极-发射极电压 – V CE (V)8020601004.5040120012580206010043集电极电流 – I C (A )栅极-发射极电压 – V GE (V)图4. 传输特性40120456128020601001089711图5. 饱和电压vs. V GE集电极-发射极电压 – V C E (V )0420481220栅极-发射极电压 – V GE (V)1281616图6. 饱和电压vs. V GE集电极-发射极电压 – V C E (V )0420481220栅极-发射极电压 – V GE (V)1281616典型特性曲线（续）图7. 电容特性电容(p F )0200050000.11.010.030.0集电极-发射极电压 – V CE (V)开关时间 [n s ]栅极电阻 - R G (Ω)图9. 开启特性 vs. 栅极电阻300010004000102001020501004030图8. 栅极电荷特性栅极-发射极电压 - V G E (V )06153060120栅极电荷量 – Q G (nC)931290开关时间 [n s ]栅极电阻 - R G (Ω)图10. 关闭特性 vs. 栅极电阻10550010205010004030开关损耗 [m J ]栅极电阻 - R G (Ω)图11. 开关损耗 vs. 栅极电阻0.310.01020504030正向电流 - I F (A )正向电压 - V F (V)图12. 正向特性0.280.01410.0321.0典型特性曲线（续）图14. IGBT 瞬态热阻抗峰值功率阻抗 (°C /W )00.10.2510-510-410-310-1脉冲持续时间(S)0.150.050.210-210-110101100101102103102集电极电流 - I C (A )图13. SOA 特性集电极-射极电压 - V CE(V)封装外形图声明：♦士兰保留说明书的更改权，恕不另行通知！客户在下单前应获取最新版本资料，并验证相关信息是否完整和最新。

FGH40N60UFDTU;中文规格书,Datasheet资料

©2009 Fairchild Semiconductor Corporation
1
FGH40N60UFD Rev. C1
C
G
E
Ratings 600 ± 20 80 40 120 40 20 80 290 116
-55 to +150 -55 to +150
300
Units V V A A A A A A
W W oC oC
oC
Typ.
-
Max.
0.43 1.45 40
Units
oC/W oC/W oC/W

/
FGH40N60UFD 600V, 40A Field Stop IGBT
Package Marking and Ordering Information
TC = 25oC TC = 125oC TC = 25oC TC = 125oC
Min.
-
Typ.
1.95 1.85 45 140 75 375
Max
2.6 -
Units
V ns nC
FGH40N60UFD Rev. C1
3
/

Symbol
Parameter
Test Conditions
VFM
Diode Forward Voltage
IF = 20A
TC = 25oC TC = 125oC
trr Qrr
Diode Reverse Recovery Time
IES =20A, dIES/dt = 200A/µs Diode Reverse Recovery Charge
FGH40N60UFD 600V, 40A Field Stop IGBT

IXKN75N60中文资料

TVJ = 25°C
150 100 50 0 0 4 8 12
VDS
0.08
10 V
0.04
12-18 V
0.00 16
V 20
0
50
100
150
ID
200 A 250
Fig. 1: typ. Output Characteristics
Fig. 2: typ. RDSon vs. Drain Current
M4 screws (4x) supplied
© 2001 IXYS All rights reserved
2-3
元器件交易网
IXKN 75N60C
250
A VGS = 18 - 12 V
0.16
10 V Ω VGS = 8 V
12
RDSon 8V
Applications
● ● ●
0.22 K/W
● ●
Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS) Power factor correction (PFC) Welding Inductive heating
●
miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Easy screw assembly fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density

NuMicro M460系列产品简介说明书

NuMicro® FamilyArm® Cortex®-M4-based MicrocontrollerM460 SeriesProduct BriefM460 SERIES PRODUCT BRIEFThe information described in this document is the exclusive intellectual property ofNuvoton Technology Corporation and shall not be reproduced without permission from Nuvoton.Nuvoton is providing this document only for reference purposes of NuMicro microcontroller andmicroprocessor based system design. Nuvoton assumes no responsibility for errors or omissions.All data and specifications are subject to change without notice.For additional information or questions, please contact: Nuvoton Technology Corporation.1 GENERAL DESCRIPTIONThe NuMicro M460 series is a 32-bit microcontroller based on Arm Cortex-M4F core, with DSP instruction set and single-precision floating-point unit (FPU), targeted for IoT, Industrial, and consumer applications. The M460 series runs up to 200 MHz, and features 1.7 V to 3.6 V wide operating voltage, -40 °C to 85 °C /105°C wide operating temperature, a variety of packages choice, and excellent high immunity characteristics by ESD HBM 2 KV and EFT 4.4 KV.As the new smart function added on home appliances, the M460 series provides up to 1024 KB dual-bank of Flash memory for code storage and 512 KB SRAM for run time operation. The dual bank design of 1024 KB Flash memory supports the Firmware update through the Over-The-Air (FOTA) process. Additionally, in response to the code security requirements, the M460 series supports Execute-Only Memory (XOM) function to protect confidential program code information from stealing in the run-time. In order to reduce the data access overhead of CPU core to peripherals, up to 2 sets of peripheral direct memory access (PDMA) is provided.The M460 series supports plenty of peripherals, including Ethernet 10/100 MAC, hardware crypto engine, key store, true random number generator (TRNG), programmable audio PLL, HyperBus interface, 4 sets of CAN FD, USB HS OTG, USB FS OTG, up to 24 channels of 16-bit PWM, 10 sets of UART, 4 sets of SPI/I2S, 2 set of Quad-SPI, 5 sets of I²C, 1 set of USCI, 1 set of PSIO, 4 sets of EQEI and a real-time clock (RTC). The M460 series also provides rich analog peripherals including 4 sets of analog comparators, up to 28 channels of 12-bit SAR ADC, and 2 channel of 12-bit DAC.For the development, Nuvoton provides the NuMaker-M467HJ, NuMaker-M463KG evaluation board, and Nuvoton Nu-Link debugger. The 3rd Party IDE such as Keil MDK, IAR EWARM, Eclippse IDE with GNU GCC compilers are also supported.Product Line Core(MHz)EthernetCrypto+ TRNGCAN FDUSBOTGHBI EBI UART I2CQSPI/SPIPWM ADC DAC ACMP EQEIM467xJHAx Series200 √√ 4 HS x1FS x1√√10+3 5SPI x4QSPI x224 28 2 4 4M463xGCAx Series 200 - √ 2 HS x1 - √8+1 5SPI x4QSPI x224 16 - 2 2Table 1-1 NuMicro M460 Series Key Features Support Table The NuMicro M460 series supports six package choices.●QFN48 w/ EPAD: 5 mm x 5 mm, Load pitch: 0.35 mm●LQFP48: Body Size 7 mm x 7 mm, Load Pitch 0.5 mm●LQFP64: Body Size 7 mm x 7 mm, Load Pitch 0.4 mm●LQFP128: Body Size 14 mm x 14 mm, Load Pitch 0.4 mm●LQFP144: Body Size 20 mm x 20 mm, Load Pitch 0.5 mm●LQFP176: Body Size 24 mm x 24 mm, Load Pitch 0.5 mmThe NuMicro M460 series is suitable for a wide range of applications such as:●IoT Gateway●Industrial Control●Telecom●Data CenterM460 SERIES PRODUCT BRIEF2 FEATURES2.1 M467xJHAx Series●Operating Characteristics–Voltage range: 1.7 V to 3.6 V–Temperature range: -40 °C to +85 °C–EFT 4.4 KV–ESD HBM 2 KV●Core–Up to 200 MHz ARM Cortex-M4F–DSP instruction set–Single-precision floating point instructions (FPU) –Memory Protection Unit (MPU) with eightmemory regions●Memories–Up to 1024 KB Flash memory with dual bank structure supporting Firmware Over-The-Air(FOTA)–Flash memory supporting up to four regions of eXecute-Only-Memory (XOM)–8 KB user-defined loader (LDROM)– 3 KB One-Time-Programmable ROM–Up to 512 KB SRAM including hardware parity check 64 KB–16 KB Cache for XIP in external QSPI Flash●External Memory Interface–External bus interface (EBI), i80 mode–HyperBus interface (HBI), up to 90 MHz●Clock– 4 to 24 MHz crystal oscillator–32.768 kHz crystal oscillator for RTC–Internal 48 MHz RC oscillator–Internal 10 kHz RC oscillator–Internal PLL up to 200 MHz–Programmable Audio PLL (APLL)●Power Management–Active: 175 μA/MHz at 25°C/3.3V (peripheral off)–Low leakage power-down (LLPD): 340 μA–Standby power-down (SPD) w/o RAM retention:1.2 μA–Deep power-down (DPD): 0.2 μA (RTC off)–RTC with VBAT supply: 1 μA–Supports wake up from Normal Power-down mode by: RTC, WDT, I²C, Timer, UART, GPIO,EINT, ACMP, SDH, USB FS, USB HS, EMAC,and BOD●Timer & PWM–Four 32-bit timers–Up to 12 Enhanced PWM with twelve 16-bit counters–Up to 12 Basic PWM with two 16-bit counters–One 24-bit count-down SysTick timer–One watchdog timer–One window watchdog timer ●Peripheral Direct Memory Access (PDMA)– 2 set of PDMA, each with 16 channels–Channel can be operated by software trigger,UART, SPI, EPWM, TIMER, ADC, DAC, ACMPand I2C●Analog Peripheral– 3 set of 12-bit, up to 28-ch, 5 MSPS SAR ADC– 2 set of 12-bit, 1 MSPS DAC– 4 sets of analog comparators–Built-in internal reference voltage●Communication Interface–Up to 10 sets of UART interfaces with IrDA(Support LIN in UART0 and UART1)–Up to 3 set of ISO-7816-3 interfaces, whichsupport full duplex UART mode–Up to 5 sets of I2C interfaces with SMBus/PMBus(Up to 3.4 Mbps)–Up to 4 sets of SPI/I2S interfaces (SPI up to 100MHz in Master mode)–Up to 2 set of Quad-SPI interface (Up to 100MHz in Master mode)– 2 set of I2S interface– 4 set of CAN FD interfaces– 2 set of Secure Digital Host Controllers (Up to 50MHz)– 1 set of SPI Flash interface supports quad modeand eXecute-In-Place–Up to 1 set of USCI interfaces–Up to 1 set of PSIO interfaces–Support 6x8 KPI–Up to 4 set of enhanced quadrature encoderinterfaces (EQEI)–Up to 4 set of 24-bit, 3-ch enhanced inputcapture timer/counter units●Camera Capture Interface●Advanced Connectivity–USB 2.0 high speed device/host/OTG controllerwith on-chip PHY–USB 2.0 full speed device/host/OTG controllerwith on-chip PHY–10/100 Ethernet MAC with RMII (IEEE1588v2)●Cryptography Accelerator–ECC-571–AES-256–SHA-512–HMAC-512–RSA-4096–SM2●Pseudo Random Number Generator (PRNG)●True Random Number Generator (TRNG)●Key Store●Secure Boot●Voltage Adjustable Interface (VAI)M460 SERIES PRODUCT BRIEF●Cyclic Redundancy Calculation (CRC)●Real Time Clock (RTC) with Vbat●Up to 146 I/O pins with interrupt capability ●IEC60730-1 Class B–Supports certified IEC60730-1 Class B Software Test Library (STL)●Development Platform Support–Arm Keil RVMDK and IAR EWARM IDE–Free GNU compiler with Eclipse IDE support–ICP (In Circuit Programmer) support for updating internal code via Nu-Link debugger–ISP (In System Programmer) support forupdating code through UART, SPI, I2C, RS-485peripheral interfaces–Pin Viewer for real time monitoring the status of all I/O pins–PinConfigure tool for pin assignment, initial code generation and OrCAD/Protel part generation●96-bit Unique ID (UID)●128-bit Unique Customer ID (UCID)●Package–Package is Halogen-free, RoHS-compliant and TSCA-compliant.Pin Count 176 144 12864Type LQFP LQFP LQFP LQFPI/O Pin 146 114 100 44Lead Pitch(mm)0.5 0.5 0.4 0.4Dimensions(mm) 24x24x1.420x20x1.414x14x1.47x7x1.4M460 SERIES PRODUCT BRIEF2.2 M463xGCAx Series●Operating Characteristics–Voltage range: 1.7 V to 3.6 V–Temperature range: -40 °C to +105 °C–EFT 4.4 KV–ESD HBM 2 KV●Core–Up to 200 MHz ARM Cortex-M4F–DSP instruction set–Single-precision floating point instructions (FPU) –Memory Protection Unit (MPU) with eightmemory regions●Memories–Up to 256 KB Flash memory–Flash memory supporting up to four regions of eXecute-Only-Memory (XOM).–8 KB user-defined loader (LDROM)–Up to 128 KB SRAM including hardware parity check 64 KB●External Memory Interface–External bus interface (EBI), i80 mode●Clock– 4 to 24 MHz crystal oscillator–32.768 kHz crystal oscillator for RTC–Internal 48 MHz RC oscillator–Internal 10 kHz RC oscillator–Internal PLL up to 200 MHz●Power Management–Active: 135 μA/MHz at 25°C/3.3V (peripheral off)–Low leakage power-down (LLPD): 80 μA–Standby power-down (SPD) w/o RAM retention:0.9 μA–Deep power-down (DPD): 0.15 μA (RTC off)–RTC with VBAT supply: 0.5 μA–Supports wake up from Normal Power-down mode by: RTC, WDT, I²C, Timer, UART, GPIO,EINT, ACMP, SDH, USB HS, and BOD●Timer & PWM–Four 32-bit timers–Up to 12 Enhanced PWM with twelve 16-bit counters–Up to 12 Basic PWM with two 16-bit counters–One 24-bit count-down SysTick timer–One watchdog timer–One window watchdog timer●Peripheral Direct Memory Access (PDMA)– 1 set of PDMA with 16 channels–Channel can be operated by software trigger, UART, SPI, EPWM, TIMER, ADC, DAC, ACMPand I2C●Analog Peripheral– 1 set of 12-bit, up to 16-ch, 5 MSPS SAR ADC – 2 sets of analog comparators–Built-in internal reference voltage●Communication Interface–Up to 8 sets of UART interfaces with LIN andIrDA–Up to 1 set of ISO-7816-3 interfaces, whichsupport full duplex UART mode–Up to 5 sets of I2C interfaces with SMBus/PMBus(Up to 3.4 Mbps)–Up to 4 sets of SPI/I2S interfaces (SPI up to 100MHz in Master mode)–Up to 2 set of Quad-SPI interface (Up to 100MHz in Master mode)– 2 set of CAN FD interfaces–Up to 1 set of Secure Digital Host Controllers (upto 50 MHz)–Up to 1 set of USCI interfaces–Up to 1 set of PSIO interfaces–Support 6x8 KPI–Up to 2 set of enhanced quadrature encoderinterfaces (EQEI)–Up to 2 set of 24-bit, 3-ch enhanced inputcapture timer/counter units●Advanced Connectivity–USB 2.0 high speed device/host/OTG controllerwith on-chip PHY●Cryptography Accelerator–AES-256●Pseudo Random Number Generator (PRNG)●True Random Number Generator (TRNG)●Key Store●Secure Boot●Voltage Adjustable Interface (VAI)●Cyclic Redundancy Calculation (CRC)●Real Time Clock (RTC) with Vbat●Up to 119 I/O pins with interrupt capability●IEC60730-1 Class B–Supports certified IEC60730-1 Class B SoftwareTest Library (STL)●Development Platform Support–Arm Keil RVMDK and IAR EWARM IDE–Free GNU compiler with Eclipse IDE support–ICP (In Circuit Programmer) support for updatinginternal code via Nu-Link debugger–ISP (In System Programmer) support forupdating code through UART, SPI, I2C, CAN-FD,USB HS peripheral interfaces–Pin Viewer for real time monitoring the status ofall I/O pins–PinConfigure tool for pin assignment, initial codegeneration and OrCAD/Protel part generation●96-bit Unique ID (UID)M460 SERIES PRODUCT BRIEF●128-bit Unique Customer ID (UCID)●Package–Package is Halogen-free, RoHS-compliant and TSCA-compliant.Pin Count 128 64 4848Type LQFP LQFP LQFP QFNI/O Pin 100 44 33 33Lead Pitch(mm)0.4 0.4 0.5 0.35Dimensions(mm) 14x14x1.47x7x1.47x7x1.45x5X0.8M460 SERIES PRODUCT BRIEF3 BLOCK DIAGRAM3.1M460 Series Block DiagramM460 SERIES PRODUCT BRIEF4 PARTS INFORMATION 4.1 Package Type4.1.1 M460 SeriesPart No.QFN48(5x5mm)LQFP48(7x7mm)LQFP64(7x7mm)LQFP128(14x14mm)LQFP144(20x20mm)LQFP176(24x24mm)M463 M463YGCAE M463LGCAE M463SGCAE M463KGCAEM467 M467SJHAN M467KJHAN M467JJHAN M467HJHANM460 SERIES PRODUCT BRIEFM460 SERIES PRODUCT BRIEF4.2NuMicro M460 Series Selection Guide4.2.1M463xGCAE SeriesPART NUMBERM463KGCAESGCAELGCAEYGCAESystem Frequency (MHz)200 Flash (KB) 256 SRAM (KB) 128 LDROM (KB) 8 XOM (regions)4 PDMA16-chI/O100443333RTC (V BAT ) √ 32-bit Timer 4 16-bit EPWM 12 16-bit BPWM12 C o n n e c t i v i t yUART 8 QSPI 2 SPI/I 2S4 I 2C5 CAN-FD 2 PSIO 1USCI 1 SD Host 1 ISO-7816-31 USB High Speed OTG with PHY√ LCD Parallel Data Bus (External Bus Interface)√ EQEI 2 ECAP 2 KPI6x812-bit ADC161612 12Analog Comparator2 Crypto AES-256TRNG√ Operating Temperature-40°C ~ 105°CPackageLQFP 128(14x14mm)LQFP 64 (7x7mm)LQFP 48 (7x7mm)QFN 48 (5x5mm)M460 SERIES PRODUCT BRIEF4.2.2M467xJHAN SeriesPART NUMBERM467HJHANJJHANKJHAN SJHANSystem Frequency (MHz)200 Flash (KB) 1024 SRAM (KB) 512 LDROM (KB) 8 XOM (regions)4PDMA2 set, each with 16-ch I/O14611410044RTC (V BAT ) √ 32-bit Timer 4 16-bit EPWM 12 16-bit BPWM12C o n n e c t i v i t yUART 109QSPI 2 SPI/I 2S 4 SPI Master1 I 2S2 I 2C 5 CAN-FD 4 PSIO 1 USCI 1 SD Host 2 ISO-7816-33 USB High Speed OTG with PHY √ USB Full Speed OTG with PHY√ LCD Parallel Data Bus (External Bus Interface)√HyperBus Interface√-EQEI 4 ECAP 4 KPI6x812-bit ADC 282012-bit DAC2 Analog Comparator4Crypto AES-256, ECC-571, SHA-512, HMAC-512, RSA-4096, SM2TRNG √Ethernet 10/100 Mac √Camera Capture Interface √Operating Temperature -40°C ~ 85°CPackage LQFP 176(24x24mm)LQFP 144(20x20mm)LQFP 128(14x14mm)LQFP 64(7x7mm)M460 SERIES PRODUCT BRIEF4.3 NuMicro M460 Naming RuleM4 60 H J H A E Core Series Package Flash Size SRAM Size Revision TemperatureCortex-M4F63: CAN FD/USB HS67: Ethernet/Crypto Y: QFN48(5x5 mm)L: LQFP48(7x7 mm)S: LQFP64(7x7 mm)K: LQFP128(14x14 mm)J: LQFP144(20x20 mm)H: LQFP176(24x24 mm)J: 1024 KBG: 256 KBH: 512 KBC: 128 KBA E:-40°C ~ 105°CN:-40°C ~ 85°CM460 SERIES PRODUCT BRIEF5 DEVELOPMENT PLATFORM5.1 Programmer and DebuggerNu-Link Basic full speed USB2.0 hardware debugger/programmerNu-Link-Pro Advanced hardware debugger/programmer with programming counterNu-Link 2.0 Advanced high speed USB2.0 hardware debugger/programmer with multi-functionsNu-Link-Gang Off-line hardware programmer supporting up to four chips programming for mass-production ISP In System Programmer, a software programming tool supporting UART/USBICP In Chip Programmer, a software programming tool supporting Nu-Link programmer5.2 Development EnvironmentProgramming IDE Keil MDK, IAR, NuEclipse (GCC)Software Package Board Support Package (BSP), Sample CodeDevelopment IDE NuTool PinView, NuTool PinConfig, NuConsole5.3 Development BoardEVB NuMaker Part Number FeatureNK-M467HJ M467SJHAN, M467KJHAN, M467JJHAN,M467HJHAN Support Ethernet, CAN-FD, Crypto, USB HS, EBI, Expand Connector, and Arduino Uno InterfaceNK-M463GC M463KGCAE, M463SGCAE, M463LGCAE,M463YGCAE Support USB HS, EBI, ExpandConnector, and Arduino Uno InterfaceM460 SERIES PRODUCT BRIEF6 REVISION HISTORYDate Revision Description2022.07.05 1.00 Initial version M460 SERIES PRODUCT BRIEFM460 SERIES PRODUCT BRIEFImportant NoticeNuvoton Products are neither intended nor warranted for usage in systems or equipment, any malfunction or failure of which may cause loss of human life, bodily injury or severe propertydamage. Such applications are deemed, “Insecure Usage”.Insecure usage includes, but is not limited to: equipment for surgical implementation, atomic energycontrol instruments, airplane or spaceship instruments, the control or operation of dynamic, brakeor safety systems designed for vehicular use, traffic signal instruments, all types of safety devices,and other applications intended to support or sustain life.All Insecure Usage shall be made at customer’s risk, and in the event that third parties lay claims toNuvoton as a result of customer’s Insecure Usage, customer shall i ndemnify the damages andliabilities thus incurred by Nuvoton.。

IXGH40N120B2D1;IXGT40N120B2D1;中文规格书,Datasheet资料

High Voltage IGBTs w/DiodeSymbol Test ConditionsMaximum RatingsV CES T C = 25°C to 150°C 1200 V V CGR T J = 25°C to 150°C, R GE = 1M Ω 1200 V V GES Continuous ± 20 V V GEM Transient± 30V I C25T C = 25°C (Limited by Lead) 75 A I C110T C = 110°C 40 A I F110T C = 110°C25 A I CMT C = 25°C, 1ms200ASSOA V GE = 15V, T VJ = 125°C, R G = 2Ω I CM = 80 A (RBSOA)Clamped Inductive Load @ 0.8 ≤ V CES V P C T C = 25°C380W T J -55 ... +150°C T JM 150°C T stg -55 ... +150°C T L1.6mm (0.062 in.) from Case for 10s 300 °C T SOLD Plastic Body for 10 seconds260°C M d Mounting Torque (TO-247) 1.13/10 Nm/lb.in.WeightTO-247 6 g TO-2684gIXGH40N120B2D1IXGT40N120B2D1Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max.V GE(th) I C = 250μA, V CE = V GE 3.05.0 VI CES V CE = V CES, V GE = 0V100 μA TJ = 125°C3 mA I GES V CE = 0V, V GE = ± 20V ±100 nAV CE(sat)I C = 40A, V GE = 15V, Note 12.93.5VV CES = 1200V I C110= 40A V CE(sat)≤ 3.5V FeatureszInternational Standard Packages zIGBT and Anti-Parallel FRED for Resonant Power Supplies - Induction Heating - Rice Cookers zSquare RBSOA zFast Recovery Expitaxial Diode (FRED)- Soft Recovery with Low I RMAdvantagesz High Power DensityzLow Gate Drive RequirementG = Gate C = Collector E = Emitter TAB = CollectorTO-247 (IXGH)G CETO-268 (IXGT)GEt fi(typ) = 140ns© 2009 IXYS CORPORATION, All RrightsRreservedIXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.Fig. 23.Peak reverse current IRMversus -diF/dtFig. 22.Reverse recovery charge Qrversus -diF/dtFig. 21.Forward current IFversus VFQrIRMFig. 24.Dynamic parameters Qr, IRMversus TVJFig. 25.Recovery time trrversus -diF/dt Fig. 26.Peak forward voltage VFRandtfrversus diF/dtFig. 27.Transient thermal resistance junction to case2006001000040080060708090040801201600.00.51.01.52.0KfTVJ°C-diF/dt0200400600800100051015200.000.250.500.751.00FRdiF/dtV2006001000040080051015202530100100020040060080010000123102030405060IRMQrIFAVF-diF/dt-diF/dtA/μsAVnCA/μs A/μstrrns tfrA/μsμs分销商库存信息:IXYSIXGH40N120B2D1IXGT40N120B2D1。

FGAF40N60UFTU;中文规格书,Datasheet资料

I CES Collector Cut-Off Current V CE = V CES, V GE = 0V----250uA I GES G-E Leakage Current V GE = V GES, V CE = 0V ----± 100nAOn CharacteristicsV GE(th)G-E Threshold Voltage I C = 20mA, V CE = V GE 3.5 5.1 6.5VV CE(sat)Collector to EmitterSaturation VoltageI C = 20A, V GE = 15V-- 2.3 3.0VI C = 40A, V GE = 15V-- 3.1--VDynamic CharacteristicsC ies Input CapacitanceV CE = 30V, V GE = 0V,f = 1MHz --1075--pFC oes Output Capacitance--170--pF C res Reverse Transfer Capacitance--50--pFSwitching Characteristicst d(on)Turn-On Delay TimeV CC = 300 V, I C = 20A,R G = 10Ω, V GE = 15V,Inductive Load, T C = 25°C --15--nst r Rise Time--30--ns t d(off)Turn-Off Delay Time--65130ns t f Fall Time--35100ns E on Turn-On Switching Loss--470--uJ E off Turn-Off Switching Loss--130--uJ E ts TotalSwitchingLoss--6001000uJt d(on)Turn-On Delay TimeV CC = 300 V, I C = 20A,R G = 10Ω, V GE = 15V,Inductive Load, T C = 125°C --30--nst r Rise Time--37--ns t d(off)Turn-Off Delay Time--110200ns t f Fall Time--80250ns E on Turn-On Switching Loss--500--uJ E off Turn-Off Switching Loss--310--uJ E ts TotalSwitchingLoss--8101200uJQ g Total Gate ChargeV CE = 300 V, I C = 20A,V GE = 15V --77150nCQ ge Gate-Emitter Charge--2030nC Q gc Gate-Collector Charge--2540nC L e Internal Emitter Inductance Measured 5mm from PKG--14--nHDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.FACT Quiet Series™FAST ®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E2CMOS™EnSigna™FACT™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™分销商库存信息: FAIRCHILDFGAF40N60UFTU。

G40n60

VGE = 15V VGE = 20V
IGBT and Diode at TJ = 25oC ICE = 40A VCE = 0.65 BVCES VGE = 15V RG = 2.2Ω L = 200µH
Test Circuit (Figure 20)
MIN TYP MAX UNITS
600
-
-
V
TJ = 25oC, Unless Otherwise Speciﬁed (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3)
Symbol
C
Features
• 100kHz Operation At 390V, 40A • 200kHz Operation At 390V, 20A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at TJ = 125o • Low Conduction Loss
IC = 40A, VGE = 15V
TJ = 25oC TJ = 125oC
IC = 250µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 2.2Ω, VGE = 15V L = 100µH, VCE = 600V

IXA45IF1200HB 产品说明书

VGE(th) I CES
gate emitter threshold voltage collector emitter leakage current
I GES Q G(on) t d(on) tr t d(off) tf Eon Eoff RBSOA I CM SCSOA t SC I SC R thJC RthCH
XPT IGBT
Copack
Part number
IXA45IF1200HB
IXA45IF1200HB
VCES =
I C25
=
V = CE(sat)
1200 V 78 A 1.8 V
(G) 1
2 (C) 3 (E)
Backside: collector
Features / Advantages:
● Easy paralleling due to the positive temperature coefficient of the on-state voltage
20100702b
IXA45IF1200HB
IGBT 70 VGE = 15 V 60
50
IC 40 [A] 30
20
TVJ = 25°C TVJ = 125°C
10
0
0
1
2
3
VCE [V]
Fig. 1 Typ. output characteristics
70
60
50
IC 40 [A] 30
short circuit safe operating area short circuit duration short circuit current thermal resistance junction to case thermal resistance case to heatsink

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© 2001 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V CES T J = 25°C to 150°C
600V
V CGR T J
= 25°C to 150°C; R GE
= 1 M W 600V V GES Continuous ±20V V GEM Transient ±30V I C25T C = 25°C 75A I C110T C = 110°C 40A I CM
T C = 25°C, 1 ms
150
A SSOA V GE = 15 V, T VJ = 125°C, R G = 10 W I CM = 80A (RBSOA)Clamped inductive load, L = 100 m H @ 0.8 V CES P C T C = 25°C
250
W T J -55 ... +150
°C T JM 150
°C T stg
-55 ... +150
°C Maximum lead temperature for soldering 300
°C
1.6 mm (0.062 in.) from case for 10 s M d Mounting torque (M3)
1.13/10Nm/lb.in.
Weight
TO-247 AD 6g TO-247 SMD
4
g
Symbol Test Conditions
Characteristic Values
(T J = 25°C, unless otherwise specified)
min.typ.max.
BV CES I C = 250 m A, V GE = 0 V
600V BV CES temperature coefficient 0.072%/K V GE(th)I C = 250 m A, V CE = V GE
2.5
5V V GE(th) temperature coefficient -0.286
%/K I CES V CE = 0.8 V CES T J = 25°C 200m A V GE = 0 V
T J = 150°C
1mA I GES V CE = 0 V, V GE = ±20 V ±100nA V CE(sat)
I C
= I C110, V GE = 15 V
1.6
2.1
V
98799 (01/01)
C (TAB)
G = Gate,
C = Collector,E = Emitter,TAB = Collector
TO-247 AD (IXGH)
Features l
International standard packages JEDEC TO-268 surface
mountable and JEDEC TO-247 AD l
High current handling capability l
Latest generation HDMOS TM process l
MOS Gate turn-on -drive simplicity
Applications l
AC motor speed control l
DC servo and robot drives l
DC choppers l
Uninterruptible power supplies (UPS)l
Switched-mode and resonant-mode power supplies
Advantages l
Space savings (two devices in one package)l
High power density l
Suitable for surface mounting l
Switching speed for high frequency applications l
Easy to mount with 1 screw,TO-247(isolated mounting screw hole)
V CES = 600 V I C25
= 75 A V CE(sat)= 2.1 V t fi
= 180 ns
HiPerFAST TM IGBT
Preliminary data sheet
TO-268 (D3)(IXGT)
(TAB)
G
E
IXGH 40N60B IXGT 40N60B
Symbol Test Conditions
g fs I
C
= I
C110
; V Pulse test, t £
C
ies
C
oes V
CE
= 25 V, V
C
res Q。