BTA16-600B

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恒温箱实验报告

计算机控制系统设计报告设计名称：恒温箱温度计算机控制系统设计姓名：高川学号: 20121851班级：自动化1203学院：信息工程学院任课教师：聂诗良2015年11月21日基于单片机的恒温箱控制系统设计摘要：本设计是基于AT89C52单片机的恒温箱控制系统，系统分为硬件和软件两部分，其中硬件包括：电源、温度传感器、显示屏、控制、晶闸管驱动和报警的设计；软件包括：键盘管理程序设计、显示程序设计、PID控制程序设计和温度报警程序设计。

编写程序结合硬件进行调试，能够实现设置和调节初始温度值，进行液晶显示，当加热到设定值后立刻报警。

本设计从实际应用出发选取了体积小、精度相对高的数字式温度传感元件DS18B20作为温度采集器，单片机AT89C52为主控芯片，液晶作为显示输出，实现了对温度的实时测量与恒定控制。

关键词：单片机、晶闸管、恒温、PID算法。

引言：本课题采用单片机控温度实现恒温控制，这个环节有温度传感器将恒温箱内的温度信号传输给单片机，单片机通过对输入的温度信号与设定值比较，再把比较后的信号通过PID 控制器得出控制信号，从而保持控制晶闸管的通断状态，达到平滑的控制灯泡两端电压实现对恒温箱温度的全程控制。

一、本课题设计要求如下图所示，恒温箱采用木箱或纸箱（外形尺寸不大于30cm×30cm×30cm），内置白炽灯泡（功率不大于100W）用于加热。

木箱或纸箱白炽灯泡≤100W30cm10cm自制恒温箱要求（1）温度采集传感器采用热电阻或热电偶，或一体化数字温度传感器DS18B20。

（2）控制灯泡亮度或发热量，采用可控硅平滑控制。

（3）采用单片机89C51作为控制器。

（4）采用LCD的液晶显示器作为显示器，同时显示给定温度和实际温度。

（5）采用自制按键的键盘作为温度给定值输入。

（6）恒温箱实际温度达到给定值时（误差要求±1℃）需声光提示，声音延时5秒后停止。

（7）恒温箱最高温度≤100℃。

BTA16：可控硅是怎样控制220v电压的？

BTA16：可控硅是怎样控制220v电压的？
BTA16一600B为双向可控硅，工作It有效值16A，工作电压600Ⅴ，栅极触发电流50ma。

不知道你的控制电路采用哪一种触发控制状态，就下图来说一般不会出现你描述的情况。

你可从图中看出BTA16可控硅都在控制极串连一双向触发二极管元件。

双向触发二极管的工作原理
双向触发二极管工作时一只正向导通另一只反向导通，导通电压是两只稳压管的正向导通电压与反向击穿电压的叠加，因此触发二极管是不区分正负极的。

只要外加电压大于触电压VBO就可导通，一旦导通，要使它恢复断流，只有将电源切断或使其电流、电压降至保持电流，保持电压以下。

你述说的电路中BTA16没有坏，到网上买几只双向触发二极管，按图改动一下，再试可能这种问题就解决了。

本人水平有限，不对之处谅解为盼。

zhaoqifa2017.11.22 Shanghai。

BTA16中文资料_数据手册_参数

®1/9Table 1: Main FeaturesDESCRIPTIONAvailable either in through-hole or surface-mount packages, the BTA16, BTB16 and T16 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applica-tions such as static relays, heating regulation, in-duction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers, ...The snubberless versions (BTA/BTB...W and T16series) are specially recommended for use on in-ductive loads, thanks to their high commutation performances. By using an internal ceramic pad,the BTA series provides voltage insulated tab (rat-ed at 2500V RMS ) complying with UL standards (File ref.: E81734).Symbol Value Unit I T(RMS)16A V DRM /V RRM 600, 700 and 800V I GT (Q 1)10 to 50mABTA16, BTB16 and T16 Series16A TRIAC SREV. 7February 2006SNUBBERLESS™, LOGIC LEVEL & STANDARDTable 2: Order CodesPart Number Marking BTA16-xxxxxRG See page table 8 onpage 8BTB16-xxxxxRG T16xx-xxxGBTA16, BTB16 and T16 Series2/9Table 3: Absolute Maximum Ratings Tables 4: Electrical Characteristics (T j = 25°C, unless otherwise specified)■SNUBBERLESS and Logic Level (3 quadrants)Symbol ParameterValue Unit I T(RMS)RMS on-state current (full sine wave)D 2PAK /TO-220AB T c = 100°C 16ATO-220AB Ins.T c = 15°C I TSM Non repetitive surge peak on-state current (full cycle, T j initial = 25°C) F = 50 Hz t = 20 ms 160A F = 60 Hz t = 16.7 ms168I ²t I ²t Value for fusingt p = 10 ms 144A ²s dI/dtCritical rate of rise of on-state cur-rent I G = 2 x I GT , t r ≤ 100 nsF = 120 HzT j = 125°C 50A/µs V DSM /V RSM Non repetitive surge peak off-state voltaget p = 10 msT j = 25°C V DSM /V RSM + 100V I GM Peak gate currentt p = 20 µsT j = 125°C 4A P G(AV)Average gate power dissipation T j = 125°C1W T stg T jStorage junction temperature range Operating junction temperature range- 40 to + 150- 40 to + 125°CSymbol Test ConditionsQuadrant T16BTA16 / BTB16Unit T1635SW CW BW I GT (1)V D = 12 V R L = 33 ΩI - II - III MAX.35103550mA V GT I - II - III MAX. 1.3V V GD V D = V DRM R L = 3.3 k ΩT j = 125°C I - II - IIIMIN.0.2V I H (2)I T = 500 mA MAX.35153550mA I L I G = 1.2 I GTI - III MAX.50255070mA II60306080dV/dt (2)V D = 67 %V DRM gate open T j = 125°C MIN.500405001000V/µs(dI/dt)c (2)(dV/dt)c = 0.1 V/µsT j = 125°C MIN.-8.5--A/ms(dV/dt)c = 10 V/µsT j = 125°C - 3.0--Without snubberT j = 125°C8.5-8.514BTA16, BTB16 and T16 Series3/9■Standard (4 quadrants)Table 5: Static Characteristics Table 6: Thermal resistance Symbol Test ConditionsQuadrant BTA16 / BTB16Unit C B I GT (1)V D = 12 V R L = 33 ΩI - II - III IV MAX.255050100mA V GT ALL MAX. 1.3V V GD V D = V DRM R L = 3.3 k Ω T j = 125°C ALLMIN.0.2V I H (2)I T = 500 mA MAX.2550mA I L I G = 1.2 I GTI - III - IVMAX.4060mA II 80120dV/dt (2)V D = 67 %V DRM gate openT j = 125°C MIN.200400V/µs (dV/dt)c (2)(dI/dt)c = 7 A/ms T j = 125°CMIN.510V/µsSymbol Test ConditionsValue Unit V T (2)I TM = 22.5 A t p = 380 µs T j = 25°C MAX. 1.55V V to (2)Threshold voltage T j = 125°C MAX.0.85V R d (2)Dynamic resistance T j = 125°C MAX.25m ΩI DRM I RRMV DRM = V RRMT j = 25°C MAX.5µA T j = 125°C2mANote 1: minimum I GT is guaranted at 5% of I GT max.Note 2: for both polarities of A2 referenced to A1.Symbol ParameterValue Unit R th(j-c)Junction to case (AC)D 2PAK / TO-220AB 1.2°C/WTO-220AB Insulated 2.1R th(j-a)Junction to ambient S = 1 cm ²D 2PAK45°C/WTO-220AB / TO-220AB Insulated60S = Copper surface under tab.BTA16, BTB16 and T16 Series4/9Figure 1: Maximum power dissipation versus RMS on-state current (full cycle)Figure 2: RMS on-state current versus case temperature (full cycle)Figure 3: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm) (full cycle)Figure 4: Relative variation of thermal impedance versus pulse durationFigure 5: On-state characteristics (maximum values)Figure 6: Surge peak on-state current versus number of cyclesBTA16, BTB16 and T16 Series5/9Figure 7: Non-repetitive surge peak on-state current for a sinusoidal pulse with width t p < 10 ms and corresponding value of I 2tFigure 8: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values)Figure 9: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (Snubberless & L ogic level types)Figure 10: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (Standard types)Figure 11: D 2P AK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35µm)BTA16, BTB16 and T16 Series6/9Figure 12: Ordering Information Scheme (BTA16 and BTB16 series)Figure 13: Ordering Information Scheme (T16 series)Table 7: Product SelectorPart Numbers Voltage (xxx)Sensitivity Type Package 600 V 700 V 800 V BTA/BTB16-xxxB X X X 50 mA Standard TO-220AB BTA/BTB16-xxxBW X X X 50 mA Snubberless TO-220AB BTA/BTB16-xxxCX X X 25 mA Standard TO-220AB BTA/BTB16-xxxCW X X X 35 mA Snubberless TO-220AB BTA/BTB16-xxxSW X XX 10 mA Logic level TO-220ABT1635-xxxGXX35 mASnubberlessD 2PAKBTB: non insulated TO-220AB packageBTA16, BTB16 and T16 Series Figure 14: D2PAK Package Mechanical DataFigure 15: D2PAK Foot Print Dimensions(in millimeters)7/9BTA16, BTB16 and T16 Series8/9In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: .Table 8: Ordering InformationOrdering type Marking Package Weight Base qtyDelivery modeBTA/BTB16-xxxyzRGBTA/BTB16xxxyz TO-220AB 2.3 g 50Tube T1635-xxxG T1635xxxG D 2PAK1.5 g50Tube T1635-xxxG-TRT1635xxxG1000Tape & reelNote: xxx = voltage, yy = sensitivity, z = typeTable 9: Revision HistoryDate Revision Description of ChangesOct-20026A Last update.13-Feb-20067TO-220AB delivery mode changed from bulk to tube.ECOPACK statement added.BTA16, BTB16 and T16 Series Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics.All other names are the property of their respective owners© 2006 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America9/9万联芯城-电子元器件采购网，提供一站式配套，解决物料烦恼，万联芯城是国内优质的电子元器件供应商，货源渠道来自原厂及代理商，只售原装现货，只需提交BOM物料清单，我们将为您报出一个满意的价格，解决客户采购烦恼，为客户节省采购成本，点击进入万联芯城。

BTA16-600C中文资料

BTA16-600C中⽂资料1/7BTA/BTB16 and T16 SeriesSNUBBERLESS ? , LOGIC LEVEL & STANDARD16A TRIAC SOctober 2002 - Ed: 6AMAIN FEATURES:DESCRIPTIONAvailable either in through-hole or surface-mount packages, the BTA/BTB16 and T16 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers, ...The snubberless versions (BTA/BTB...W and T16series) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad,the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734).Symbol Value Unit I T(RMS)16A V DRM /V RRM 600, 700 and 800VI GT (Q 1)10 to 50mAABSOLUTE MAXIMUM RATINGSSymbol ParameterValueUnit I T(RMS)RMS on-state current (full sine wave)D22P AK Tc = 100°C 16ATO-220ABTO-220AB Ins.Tc = 85°C I TSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 60 Hz t = 16.7 ms 168A F = 50 Hzt = 20 ms160I 2t I 2t Value for fusingtp = 10 ms144A 2s dI/dtCritical rate of rise of on-state current I G = 2 x I GT , tr ≤ 100 nsF = 120 Hz Tj = 125°C 50A/µs V DSM /V RSM Non repetitive surge peak off-statevoltagetp = 10 ms Tj = 25°C V DRM /V RRM+ 100V I GM Peak gate currenttp = 20 µsTj = 125°C 4A P G(AV)Average gate power dissipation Tj = 125°C1W T stg T jStorage junction temperature range Operating junction temperature range- 40 to + 150- 40 to + 125°CBTA/BTB16 and T16 Series2/7ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)sSNUBBERLESS? and LOGIC LEVEL (3 Quadrants)sSTANDARD (4 Quadrants)STATIC CHARACTERISTICSNote 1: minimum IGT is guaranted at 5% of IGT max.Note 2: for both polarities of A2 referenced to A1 Symbol Test ConditionsQuadrantT16BTA/BTB16UnitT1635SW CW BW I GT (1)V D = 12 V R L = 33 ?I - II - III MAX.35103550mA V GT I - II - III MAX. 1.3V V GD V D = V DRM R L = 3.3 k ? Tj = 125°C I - II - IIIMIN.0.2V I H (2)I T = 500 mA MAX.35153550mA I L I G = 1.2 I GTI - III MAX.50255070mA II60306080dV/dt (2)V D = 67 % V DRM gate open Tj = 125°C MIN.500405001000V/µs (dI/dt)c (2)(dV/dt)c = 0.1 V/µs Tj = 125°CMIN.-8.5--A/ms(dV/dt)c = 10 V/µs Tj = 125°C - 3.0--Without snubber Tj = 125°C8.5-8.514Symbol Test ConditionsQuadrant BTA/BTB16UnitCB I GT (1)V D = 12 V R L = 33 ?I - II - III IV MAX.255050100mA V GT ALL MAX. 1.3V V GD V D = V DRM R L = 3.3 k ? Tj = 125°C ALLMIN.0.2V I H (2)I T = 500 mA MAX.2550mA I L I G = 1.2 I GTI - III - IVMAX.4060mA II80120dV/dt (2)V D = 67 % V DRM gate open Tj = 125°CMIN.200400V/µs (dV/dt)c(2)(dI/dt)c = 7 A/ms Tj = 125°CMIN.510V/µsSymbol Test ConditionsValue Unit V TM (2)I TM = 22.5 A tp = 380 µs Tj = 25°C MAX. 1.55V V to (2)Threshold voltage Tj = 125°C MAX.0.85V R d (2)Dynamic resistance Tj = 125°C MAX.25m ?I DRM I RRMV DRM = V RRMTj = 25°C MAX.5µA Tj = 125°C2mABTA/BTB16 and T16 Series3/7THERMAL RESISTANCESS: Copper surface under tabPRODUCT SELECTORORDERING INFORMATIONSymbol ParameterValue Unit R th(j-c)Junction to case (AC)D 2PAK TO-220AB 1.2°C/WTO-220AB Insulated2.1R th(j-a)Junction to ambientS = 1 cm 2D 2PAK 45°C/WTO-220AB 60TO-220AB InsulatedPart NumberVoltage(xxx)SensitivityTypePackage600 V700 V 800 V BTA/BTB16-xxxB X X X 50 mA Standard TO-220AB BTA/BTB16-xxxBW X X X 50 mA Snubberless TO-220AB BTA/BTB16-xxxC X X X 25 mA Standard TO-220AB BTA/BTB16-xxxCW X X X 35 mA Snubberless TO-220ABBTA/BTB16-xxxSW X XX 10 mA Logic level TO-220AB T1635-xxxGXX35 mASnubberlessD 2PAKBTA/BTB16 and T16 Series4/7OTHER INFORMATIONNote: xxx = voltage, y = sensitivity, z = typePart NumberMarkingWeight Base quantity Packing mode BTA/BTB16-xxxyz BTA/BTB16xxxyz 2.3 g 250Bulk BTA/BTB16-xxxyzRG BTA/BTB16-xxxyz 2.3 g 50Tube T1635-xxxG T1635xxxG 1.5 g 50Tube T1635-xxxG-TRT1635xxxG1.5 g1000T ape & reelFig. 1: Maximum power dissipation versus RMS on-state current (full cycle).Fig. 2-1: RMS on-state current versus case temperature (full cycle).Fig. 2-2: D2PAK RMS on-state current versus ambient temperature (printed circuit board FR4,copper thickness: 35µm), full cycle.Fig. 3: Relative variation of thermal impedance versus pulse duration.BTA/BTB16 and T16 Series5/7Fig. 4: On-state characteristics (maximum values)Fig. 5: Surge peak on-state current versus number of cycles.Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp <10ms, and corresponding value of I2t. Fig. 7: Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values).Fig. 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values).Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature.BTA/BTB16 and T16 SeriesFig. 10:D2P AK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copperthickness: 35µm).PACKAGE MECHANICAL DATA6/7BTA/BTB16 and T16 Series PACKAGE MECHANICAL DATAFOOTPRINT DIMENSIONS (in millimeters)Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics2002 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - GermanyHong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - SingaporeSpain - Sweden - Switzerland - United Kingdom - United States./doc/b7997dde195f312b3169a58b.html7/7。

BAT16-600

1/7®BTA/BTB16 and T16 SeriesSNUBBERLESS ™ , LOGIC LEVEL & STANDARD16A TRIAC SApril 2002 - Ed: 5AMAIN FEATURES:DESCRIPTIONAvailable either in through-hole or surface-mount packages, the BTA/BTB16 and T16 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers, ...The snubberless versions (BTA/BTB...W and T16series) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad,the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734).Symbol Value Unit I T(RMS)16A V DRM /V RRM 600 and 800VI GT (Q 1)10 to 50mAABSOLUTE MAXIMUM RATINGSSymbol ParameterValueUnit I T(RMS)RMS on-state current (full sine wave)D2²P AK Tc = 100°C 16ATO-220ABTO-220AB Ins.Tc = 85°C I TSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 60 Hz t = 16.7 ms 168A F = 50 Hzt = 20 ms160I ²t I ²t Value for fusingtp = 10 ms144A ²s dI/dtCritical rate of rise of on-state current I G = 2 x I GT , tr ≤ 100 nsF = 120 Hz Tj = 125°C 50A/µs V DSM /V RSM Non repetitive surge peak off-statevoltagetp = 10 ms Tj = 25°C V DRM /V RRM+ 100V I GM Peak gate currenttp = 20 µsTj = 125°C 4A P G(AV)Average gate power dissipation Tj = 125°C1W T stg T jStorage junction temperature range Operating junction temperature range- 40 to + 150- 40 to + 125°CBTA/BTB16 and T16 Series2/7ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)sSNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)sSTANDARD (4 Quadrants)STATIC CHARACTERISTICSNote 1: minimum IGT is guaranted at 5% of IGT max.Note 2: for both polarities of A2 referenced to A1Symbol Test ConditionsQuadrantT16BTA/BTB16UnitT1635SW CW BW I GT (1)V D = 12 V R L = 33 ΩI - II - III MAX.35103550mA V GT I - II - III MAX. 1.3V V GD V D = V DRM R L = 3.3 k Ω Tj = 125°C I - II - IIIMIN.0.2V I H (2)I T = 500 mA MAX.35153550mA I L I G = 1.2 I GTI - III MAX.50255070mA II60306080dV/dt (2)V D = 67 % V DRM gate open Tj = 125°C MIN.500405001000V/µs (dI/dt)c (2)(dV/dt)c = 0.1 V/µs Tj = 125°CMIN.-8.5--A/ms(dV/dt)c = 10 V/µs Tj = 125°C - 3.0--Without snubber Tj = 125°C8.5-8.514Symbol Test ConditionsQuadrant BTA/BTB16UnitCB I GT (1)V D = 12 V R L = 33 ΩI - II - III IV MAX.255050100mA V GT ALL MAX. 1.3V V GD V D = V DRM R L = 3.3 k Ω Tj = 125°C ALLMIN.0.2V I H (2)I T = 500 mA MAX.2550mA I L I G = 1.2 I GTI - III - IVMAX.4060mA II80120dV/dt (2)V D = 67 % V DRM gate open Tj = 125°CMIN.200400V/µs (dV/dt)c(2)(dI/dt)c = 7 A/ms Tj = 125°CMIN.510V/µsSymbol Test ConditionsValue Unit V TM (2)I TM = 22.5 A tp = 380 µs Tj = 25°C MAX. 1.55V V to (2)Threshold voltage Tj = 125°C MAX.0.85V R d (2)Dynamic resistance Tj = 125°C MAX.25m ΩI DRM I RRMV DRM = V RRMTj = 25°C MAX.5µA Tj = 125°C2mABTA/BTB16 and T16 Series3/7THERMAL RESISTANCESS: Copper surface under tabPRODUCT SELECTORORDERING INFORMATIONSymbol ParameterValue Unit R th(j-c)Junction to case (AC)D ²PAK TO-220AB 1.2°C/WTO-220AB Insulated2.1R th(j-a)Junction to ambientS = 1 cm ²D ²PAK 45°C/WTO-220AB 60TO-220AB InsulatedPart NumberVoltage(xxx)SensitivityTypePackage600 V800 V BTA/BTB16-xxxB X X 50 mA Standard TO-220AB BTA/BTB16-xxxBW X X 50 mA Snubberless TO-220AB BTA/BTB16-xxxC X X 25 mA Standard TO-220AB BTA/BTB16-xxxCW X X 35 mA Snubberless TO-220AB BTA/BTB16-xxxSW X X 10 mA Logic level TO-220AB T1635-xxxGXX35 mASnubberlessD ²PAKBTA/BTB16 and T16 Series4/7OTHER INFORMATIONNote: xxx = voltage, y = sensitivity, z = typePart NumberMarkingWeight Base quantity Packing mode BTA/BTB16-xxxyz BTA/BTB16xxxyz 2.3 g 250Bulk BTA/BTB16-xxxyzRG BTA/BTB16-xxxyz 2.3 g 50Tube T1635-xxxG T1635xxxG 1.5 g 50Tube T1635-xxxG-TRT1635xxxG1.5 g1000T ape & reelFig. 1: Maximum power dissipation versus RMS on-state current (full cycle).Fig. 2-1: RMS on-state current versus case temperature (full cycle).Fig. 2-2: D²PAK RMS on-state current versus ambient temperature (printed circuit board FR4,copper thickness: 35µm), full cycle.Fig. 3: Relative variation of thermal impedance versus pulse duration.BTA/BTB16 and T16 Series5/7Fig. 4: On-state characteristics (maximum values)Fig. 5: Surge peak on-state current versus number of cycles.Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp <10ms, and corresponding value of I²t.Fig. 7: Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values).Fig. 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values).Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature.BTA/BTB16 and T16 SeriesFig. 10:D²P AK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35µm).PACKAGE MECHANICAL DATA6/7BTA/BTB16 and T16 Series PACKAGE MECHANICAL DATAFOOTPRINT DIMENSIONS (in millimeters)Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.© The ST logo is a registered trademark of STMicroelectronics© 2002 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - GermanyHong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - SingaporeSpain - Sweden - Switzerland - United Kingdom - United States.7/7。

单相半控桥式晶闸管整流电路的设计(阻感负载)

单相半控桥式晶闸管整流电路的设计(阻感负载)概述本文将介绍单相半控桥式晶闸管整流电路的设计，该电路适用于阻感负载。

晶闸管无法正常导通，需要外部触发信号时，使用RC触发电路。

设计的目的是通过阻感负载实现电能的稳定输出。

晶闸管选择在设计单相半控桥式晶闸管整流电路时，需要选购合适的晶闸管。

常用的有BTA08-600、BTA12-600B和BTA16-600BW。

在选购时，需要考虑晶闸管的额定电压和额定电流。

同时还需注意晶闸管的触发电流和停止电流。

桥式整流电路的设计桥式整流电路主要由4只晶闸管和4只二极管组成。

需要注意的是，二极管的极性应与晶闸管的导通方向相反。

桥式整流电路的原理是，晶闸管V1和V2分别控制输出电源的正半周期，而V3和V4则控制负半周期。

整个电路的输出电压可以通过改变晶闸管的导通角度来控制。

控制角度越大，输出电压就越高。

阻感负载的设计在实际应用中，常使用阻感负载来实现负载的稳定输出。

阻感的本质是将电流稳定地输出到负载上，有效地抑制了电路中的尖峰和电压陡峭上升。

具体设计时，需要考虑阻感的额定电流和电感值。

在设计的过程中，还需注意负载的功率和输出电压的稳定性。

RC触发电路的设计由于晶闸管无法正常导通，需要外部触发信号时，我们需要使用RC触发电路。

常见的RC触发电路有正弦波触发和方波触发两种。

在实际设计中，需要根据具体的应用场景来选择合适的触发电路。

总结本文介绍了单相半控桥式晶闸管整流电路的设计方法，包含了晶闸管和阻感负载的选择、桥式整流电路的设计、阻感负载的设计以及RC触发电路的设计等内容。

希望对读者在实际应用中提供参考。

bta16-800b可控硅工作原理

文章内容如下：bta16-800b可控硅工作原理一、引言bta16-800b可控硅是一种常见的半导体器件，广泛应用于电力电子领域。

其工作原理涉及到电力控制、电路设计等多个方面，是一个非常重要的主题。

本文将从电子器件特性、工作原理和应用范围等方面进行全面评估，并结合个人观点和理解，撰写一篇有价值的文章，帮助读者更深入地理解bta16-800b可控硅的工作原理。

二、bta16-800b可控硅的特性bta16-800b可控硅是一种双向可控硅，具有较高的电压和电流承受能力，适用于交流电路。

其主要特性包括低功率损耗、可控性强、响应速度快等。

在电力控制领域，bta16-800b可控硅被广泛应用于各种类型的电力调节装置和电路中。

三、bta16-800b可控硅的工作原理1. 可控硅的结构和原理bta16-800b可控硅通常由PNP结构组成，其工作原理是利用控制极的触发电压，通过控制极和主极之间的电压来控制器件的导通和关断。

当控制极触发电压大于一定阈值时，可控硅将导通；当电压降至一定程度时，可控硅将关断。

这种特性使得可控硅可以被广泛应用于电力调节和开关控制中。

2. bta16-800b可控硅的工作原理bta16-800b可控硅的工作原理是基于PNP结构的双向可控硅。

当控制极施加一个触发脉冲信号时，可控硅将进入导通状态，电流将从主极流向控制极；当控制极的触发脉冲信号停止时，可控硅将进入关断状态。

这种双向可控硅的特性使得其适用于交流电路中的功率控制和开关控制。

四、bta16-800b可控硅的应用范围bta16-800b可控硅主要应用于电力电子领域，包括交流调压调速系统、电炉控制系统、交流电源控制系统等。

其高可靠性和稳定性，使得bta16-800b可控硅在工业控制和电力系统中发挥着重要作用。

五、个人观点和理解作为一名电力电子工程师，我对bta16-800b可控硅的工作原理有着深刻的理解。

在我看来，bta16-800b可控硅作为一种高性能的双向可控硅，其在电力控制领域的应用前景广阔。

常用可控硅资料

序号产品型号电流电压触发电流封装形式1 BTA02-600 2A 600V TO-922 BTA03-600 2A 600V TO-126/ML3 BTN03-600 2A 600V TO-126/ML4 BTA16600B 16A 600V 35~50mA TO-220AB/FP5 BTF06-800 6A 800V 5~10mA TO-220AB/FP6 MCR100-6 1A 600V 10~30uA TO-927 MCR100-8 1A 800V 10~30uA TO-928 2P4M 2A 400V 10~30uA TO-2029 2P6M 2A 600V 10~30uA TO-20210 JCT05 5A 600V 5~10mA TO-202AB11 BT151 8A 600V 5~10mA TO-220AB12 BT169 1A 600V 10~50uA TO-9213 CT10 10A 600V 8~15mA TO-220AB/FP14 CT12 12A 600V 8~15mA TO-220AB/FP15 CT16 16A 600V 8~15mA TO-220AB/FP16 CT20 20A 600V 10~20mA TO-220AB/FP17 MAC97A6 1A 400V 1~5mA TO-9218 MAC97A8 1A 600V 1~5mA TO-9219 MAC223A6 1A 400V 50mA TO-220AB20 MAC223A8 1A 600V 50mA TO-220AB21 MAC223A8X 1A 600V 50mA SOT186A22 BT131-400D 1A 400V 1~5mA TO-9223 BT131-400E 1A 400V 5~10mA TO-9224 BT131-600D 1A 600V 1~5mA TO-9225 BT131-600E 1A 400V 5~10mA TO-9226 BT132-400D 1A 400V 1~5mA TO-9227 BT132-400E 1A 400V 5~10mA TO-92序号产品型号电流电压触发电流封装形式28 BT132-600D 1A 600V 1~5mA TO-9229 BT132-600E 1A 400V 5~10mA TO-9230 BT134-400D 4A 400V 1~5mA TO-126ML31 BT134-400E 4A 600V 5~10mA TO-126ML32 BT134-600D 4A 600V 1~5mA TO-126ML33 BT134-600E 4A 600V 5~10mA TO-126ML34 BT134-600D 4A 600V 1~5mA SOT8235 BT134-600E 4A 600V 5~10mA SOT8236 BT134-800D 4A 800V 1~5mA SOT8237 BT134-800E 4A 800V 5~10mA SOT8238 BT136-400D 4A 400V 1~5mA TO-220AB39 BT136-400E 4A 400V 5~10mA TO-220AB40 BT136-600D 4A 600V 1~5mA TO-220AB41 BT136-600E 4A 600V 5~10mA TO-220AB42 BT136-800D 4A 800V 1~5mA TO-220AB43 BT136-800E 4A 800V 5~10mA TO-220AB44 BT137-400D 8A 400V 1~5mA TO-220AB45 BT137-400E 8A 400V 5~10mA TO-220AB46 BT137-600D 8A 600V 1~5mA TO-220AB47 BT137-600E 8A 600V 5~10mA TO-220AB48 BT137-800D 8A 800V 1~5mA TO-220AB49 BT137-800E 8A 800V 5~10mA TO-220AB50 BT137X-600 8A 600V 35mA TO-220FP51 BT137X-600D 8A 600V 5mA TO-220FP52 BT137X-600F 8A 600V 25mA TO-220FP53 BT137X-800 8A 800V 35mA TO-220FP54 BT137X-600E 8A 600V 10mA TO-220FP序号产品型号电流电压触发电流封装形式55 BT137X-800E 8A 600V 10mA TO-220FP56 BT137-600F 8A 600V 25mA TO-220AB57 BT137-600D 8A 600V 5mA TO-220AB58 BT137-600E 8A 600V 10mA TO-220AB59 BT137-800E 8A 600V 10mA TO-220AB60 BT137-600F 8A 600V 25mA TO-220AB61 BT138-400D 12A 400V 1~5mA TO-220AB62 BT138-400E 12A 400V 5~10mA TO-220AB63 BT138-600D 12A 600V 1~5mA TO-220AB64 BT138-600E 12A 600V 5~10mA TO-220AB65 BT138-600F 12A 600V 25mA TO-220AB66 BT138-800D 12A 800V 1~5mA TO-220AB67 BT138-800E 12A 800V 5~10mA TO-220AB68 BT138-800F 12A 800V 25mA TO-220AB69 BT138X-600 12A 600V 35mA TO-220FP70 BT138X-600F 12A 600V 25mA TO-220FP71 BT138X-800 12A 800V 35mA TO-220FP72 BT138X-800F 12A 800V 25mA TO-220FP73 BT139X-600 16A 600V 35mA TO-220FP74 BT139X-600F 16A 600V 25mA TO-220FP75 BT139X-800 16A 800V 35mA TO-220FP76 BT139-600 16A 600V 35mA TO-220AB77 BT139-600F 16A 600V 25mA TO-220AB78 BT139-800 16A 800V 35mA TO-220AB79 BT139-800F 16A 800V 25mA TO-220AB80 BT139-800G 16A 800V 50m TO-220AB81 BT139-600F 16A 600V 25mA TO-220AB序号产品型号电流电压触发电流封装形式82 BT139-600G 16A 600V 50m TO-220AB83 BT139-600D 16A 600V 1~5mA TO-220AB84 BT139-600E 16A 600V 5~10mA TO-220AB85 BT139-800D 16A 800V 1~5mA TO-220AB86 BT139-800E 16A 800V 5~10mA TO-220AB87 BT139-800F 16A 800V 25mA TO-220AB88 BT139-800G 16A 800V 50m TO-220AB89 BT151-500R 12A 500V 2~15mA TO-220AB90 BT151-650R 12A 650V 2~15mA TO-220AB91 BT151-800R 12A 800V 2~15mA TO-220AB92 BT152 20A 800V 32mA TO-220AB93 BTA140-600 25A 600V 35mA TO-220AB94 BTA140-800 25A 800V 35mA TO-220AB95 BTA140B-500 25A 500V 35mA SOT-40496 BTA140B-600 25A 600V 35mA SOT-40497 BTA140B-800 25A 800V 35mA SOT-40498 BT145-800R 25A 800V 35mA TO-220AB99 BT148W-600R 1A 600V 0.2mA SOT223 100 BT148-400R 4A 400V 0.2mA SOT82 101 BT148-500R 4A 500V 0.2mA SOT82 102 BT148-600R 4A 600V 0.2mA SOT82 103 BT150-500R 4A 500V 0.2mA TO-220AB 104 BT150S-600R 4A 600V 0.2mA TO-252/D-PAK 105 BTA151-650R 12A 650V 4mA SOT82 106 BT151-500R 12A 500V 15mA TO-220AB 107 BT151-650R 12A 650V 15mA TO-220AB 108 BT151-800R 9A 800V 15mA TO-220AB序号产品型号电流电压触发电流封装形式109 BT151X-500R 12A 500V 15mA TO-220FP 110 BT151X-650R 12A 650V 15mA TO-220FP 111 BT151X-800R 12A 800V 15mA TO-220FP 112 BT151S-500R 12A 500V 15mA TO-252/D-PAK 113 BT151S-650R 12A 650V 15mA TO-252/D-PAK 114 BT151S-800R 12A 800V 15mA TO-252/D-PAK 115 BT151B-500R 12A 500V 15mA TO-263/D2-PAK 116 BT151B-650R 12A 650V 15mA TO-263/D2-PAK 117 BT151B-800R 12A 800V 15mA TO-263/D2-PAK 118 BT151F-500R 9A 500V 15mA SOT-186 119 BT152-400R 20A 400V 32mA TO-220AB 120 BT152-600R 20A 600V 32mA TO-220AB 121 BT152-800R 20A 800V 32mA TO-220AB 122 BT152X-400R 20A 400V 32mA TO-220FP 123 BT152X-600R 20A 600V 32mA TO-220FP 124 BT152X-800R 20A 800V 32mA TO-220FP 125 BT152B-400R 20A 400V 32mA TO-263/D2-PAK 126 BT152B-600R 20A 600V 32mA TO-263/D2-PAK 127 BT152B-800R 20A 800V 32mA TO-263/D2-PAK 128 BTA204-600D 4A 600V 5mA TO-220AB 129 BTA204-600E 4A 600V 10mA TO-220AB 130 BTA204-600F 4A 600V 25mA TO-220AB 131 BTA204-800E 4A 800V 10mA TO-220AB 132 BTA204-600B 4A 600V 50mA TO-220AB 133 BTA204-600C 4A 600V 35mA TO-220AB 134 BTA204S-600B 4A 600V 50mA TO-252/D-PAK 135 BTA204S-600C 4A 600V 35mA TO-252/D-PAK序号产品型号电流电压触发电流封装形式136 BTA204S-600D 4A 600V 5mA TO-252/D-PAK 137 BTA204S-600E 4A 600V 10mA TO-252/D-PAK 138 BTA204S-600F 4A 600V 25mA TO-252/D-PAK 139 BTA204W-600D 1A 600V 5mA SOT223 140 BTA204W-600E 1A 600V 10mA SOT223 141 BTA204W-600F 1A 600V 25mA SOT223 142 BTA204W-600B 1A 600V 50mA SOT223 143 BTA204W-600C 1A 600V 35mA SOT223 144 BTA204X-600D 4A 600V 5mA TO-220FP 145 BTA204X-600E 4A 600V 10mA TO-220FP 146 BTA204X-600F 4A 600V 25mA TO-220FP 147 BTA208X-600D 8A 600V 5mA TO-220FP 148 BTA208X-600E 8A 600V 10mA TO-220FP 149 BTA208X-600F 8A 600V 25mA TO-220FP 150 BTA208X-800E 8A 800V 10mA TO-220FP 151 BTA208-600D 8A 600V 5mA TO-220AB 152 BTA208-600E 8A 600V 10mA TO-220AB 153 BTA208-600F 8A 600V 25mA TO-220AB 154 BTA208-600B 8A 600V 50mA TO-220AB 155 BTA208-800B 8A 800V 50mA TO-220AB 156 BTA208S-600B 8A 600V 50mA TO-252/D-PAK 157 BTA208S-800B 8A 800V 50mA TO-252/D-PAK 158 BTA208S-600D 8A 600V 5mA TO-252/D-PAK 159 BTA208S-600E 8A 600V 10mA TO-252/D-PAK 160 BTA208S-600F 8A 600V 25mA TO-252/D-PAK 161 BTA208B-500B 8A 500V 50mA SOT-404 162 BTA208B-600B 8A 600V 50mA SOT-404序号产品型号电流电压触发电流封装形式163 BTA208B-800B 8A 800V 50mA SOT-404 164 BTA212X-600B 12A 600V 50mA TO-220FP 165 BTA212X-800B 12A 800V 50mA TO-220FP 166 BTA212X-600D 12A 600V 5mA TO-220FP 167 BTA212X-600E 12A 600V 10mA TO-220FP 168 BTA212X-600F 12A 600V 25mA TO-220FP 169 BTA212X-800E 12A 800V 10mA TO-220FP 170 BTA212X-600B 12A 600V 50mA TO-220FP 171 BTA212X-800B 12A 800V 50mA TO-220FP 172 BTA216X-600B 16A 600V 50mA TO-220FP 173 BTA216X-800B 16A 800V 50mA TO-220FP 174 BTA216X-600D 16A 600V 5mA TO-220FP 175 BTA216X-600E 16A 600V 10mA TO-220FP 176 BTA216X-600F 16A 600V 25mA TO-220FP 177 BTA216-600B 16A 600V 50mA TO-220AB 178 BTA216-800B 16A 800V 50mA TO-220AB 179 BTA216-600D 16A 600V 5mA TO-220AB 180 BTA216-600E 16A 600V 10mA TO-220AB 181 BTA216-600F 16A 600V 25mA TO-220AB 182 BTA225-600B 25A 600V 50mA TO-220AB 183 BTA225-800B 25A 800V 50mA TO-220AB 184 BTA225B-600B 25A 600V 50mA TO-263/D2-PAK 185 BTA225B-800B 25A 800V 50mA TO-263/D2-PAK 186 BT258U-600R 8A 600V 0.2mA SOT533/(I-PAK) 187 BT300-600R 8A 600V 15mA TO-220AB 188 BT300S-600R 8A 600V 15mA TO-252/D-PAK 189 BTA04-400B 4A 400V 35~50mA TO-220序号产品型号电流电压触发电流封装形式190 BTA04-400BW 4A 400V 50mA TO-220 191 BTA04-400C 4A 400V 25mA TO-220 192 BTA04-400CW 4A 400V 35mA TO-220 193 BTA04-400SW 4A 400V 10mA TO-220 194 BTA04-400TW 4A 400V 5mA TO-220 195 BTA04-400E 4A 400V 5~10mA TO-220 196 BTA04-400D 4A 400V 1~5mA TO-220 197 BTA04-400SAP 4A 400V 5~10mA TO-220 198 BTA04-600B 4A 600V 35~50mA TO-220 199 BTA04-600BW 4A 600V 50mA TO-220AB 200 BTA04-600C 4A 600V 25mA TO-220AB 201 BTA04-600CW 4A 600V 35mA TO-220AB 202 BTA04-600SW 4A 600V 10mA TO-220AB 203 BTA04-600TW 4A 600V 5mA TO-220AB 204 BTA04-600E 4A 600V 5~10mA TO-220AB 205 BTA04-600D 4A 600V 1~5mA TO-220AB 206 BTA04-600SAP 4A 600V 5~10mA TO-220AB 207 BTA04-700B 4A 700V 35~50mA TO-220AB 208 BTA04-700BW 4A 700V 50mA TO-220AB 209 BTA04-700C 4A 700V 25mA TO-220AB 210 BTA04-700CW 4A 700V 35mA TO-220AB 211 BTA04-700SW 4A 700V 10mA TO-220AB 212 BTA04-700TW 4A 700V 5mA TO-220AB 213 BTA04-700E 4A 700V 5~10mA TO-220AB 214 BTA04-700D 4A 700V 1~5mA TO-220AB 215 BTA04-700SAP 4A 700V 5~10mA TO-220AB 216 BTA04-800B 4A 800V 35~50mA TO-220AB序号产品型号电流电压触发电流封装形式217 BTA04-800BW 4A 800V 50mA TO-220AB 218 BTA04-800C 4A 800V 25mA TO-220AB 219 BTA04-800CW 4A 800V 35mA TO-220AB 220 BTA04-800SW 4A 800V 10mA TO-220AB 221 BTA04-800TW 4A 800V 5mA TO-220AB 222 BTA04-800E 4A 800V 5~10mA TO-220AB 223 BTA04-800D 4A 800V 1~5mA TO-220AB 224 BTA04-800SAP 4A 800V 5~10mA TO-220AB 225 BTB04-400B 4A 400V 35~50mA TO-220AB 226 BTB04-400BW 4A 400V 50mA TO-220AB 227 BTB04-400C 4A 400V 25mA TO-220AB 228 BTB04-400CW 4A 400V 35mA TO-220AB 229 BTB04-400SW 4A 400V 10mA TO-220AB 230 BTB04-400TW 4A 400V 5mA TO-220AB 231 BTB04-400E 4A 400V 5~10mA TO-220AB 232 BTB04-400D 4A 400V 1~5mA TO-220AB 233 BTB04-400SAP 4A 400V 5~10mA TO-220AB 234 BTB04-600B 4A 600V 35~50mA TO-220AB 235 BTB04-600BW 4A 600V 50mA TO-220AB 236 BTB04-600C 4A 600V 25mA TO-220AB 237 BTB04-600CW 4A 600V 35mA TO-220AB 238 BTB04-600SW 4A 600V 10mA TO-220AB 239 BTB04-600TW 4A 600V 5mA TO-220AB 240 BTB04-600E 4A 600V 5~10mA TO-220AB 241 BTB04-600D 4A 600V 1~5mA TO-220AB 242 BTB04-600SAP 4A 600V 5~10mA TO-220AB 243 BTB04-700B 4A 700V 35~50mA TO-220AB序号产品型号电流电压触发电流封装形式244 BTB04-700BW 4A 700V 50mA TO-220AB 245 BTB04-700C 4A 700V 25mA TO-220AB 246 BTB04-700CW 4A 700V 35mA TO-220AB 247 BTB04-700SW 4A 700V 10mA TO-220AB 248 BTB04-700TW 4A 700V 5mA TO-220AB 249 BTB04-700E 4A 700V 5~10mA TO-220AB 250 BTB04-700D 4A 700V 1~5mA TO-220AB 251 BTB04-700SAP 4A 700V 5~10mA TO-220AB 252 BTB04-800B 4A 800V 35~50mA TO-220AB 253 BTB04-800BW 4A 800V 50mA TO-220AB 254 BTB04-800C 4A 800V 25mA TO-220AB 255 BTB04-800CW 4A 800V 35mA TO-220AB 256 BTB04-800SW 4A 800V 10mA TO-220AB 257 BTB04-800TW 4A 800V 5mA TO-220AB 258 BTB04-800E 4A 800V 5~10mA TO-220AB 259 BTB04-800D 4A 800V 1~5mA TO-220AB 260 BTB04-800SAP 4A 800V 5~10mA TO-220 261 BTA06-400B 6A 400V 35~50mA TO-220AB 262 BTA06-400BW 6A 400V 50mA TO-220AB 263 BTA06-400C 6A 400V 25mA TO-220AB 264 BTA06-400CW 6A 400V 35mA TO-220AB 265 BTA06-400TW 6A 400V 5mA TO-220AB 266 BTA06-400E 6A 400V 5~10mA TO-220AB 267 BTA06-400D 6A 400V 1~5mA TO-220AB 268 BTA06-400SAP 6A 400V 5~10mA TO-220 269 BTA06-600B 6A 600V 35~50mA TO-220AB 270 BTA06-600BW 6A 600V 50mA TO-220AB序号产品型号电流电压触发电流封装形式271 BTA06-600C 6A 600V 25mA TO-220AB 272 BTA06-600CW 6A 600V 35mA TO-220A 273 BTA06-600SW 6A 600V 10mA TO-220AB 274 BTA06-600TW 6A 600V 5mA TO-220AB 275 BTA06-600E 6A 600V 5~10mA TO-220AB 276 BTA06-600D 6A 600V 1~5mA TO-220AB 277 BTA06-600SAP 6A 600V 5~10mA TO-220AB 278 BTA06-700B 6A 700V 35~50mA TO-220AB 279 BTA06-700BW 6A 700V 50mA TO-220AB 280 BTA06-700C 6A 700V 25mA TO-220AB 281 BTA06-700CW 6A 700V 35mA TO-220AB 282 BTA06-700SW 6A 700V 10mA TO-220AB 283 BTA06-700TW 6A 700V 5mA TO-220AB 284 BTA06-700E 6A 700V 5~10mA TO-220AB 285 BTA06-700D 6A 700V 1~5mA TO-220AB 286 BTA06-700SAP 6A 700V 5~10mA TO-220AB 287 BTA06-800B 6A 800V 35~50mA TO-220AB 288 BTA06-800BW 6A 800V 50mA TO-220AB 289 BTA06-800C 6A 800V 25mA TO-220AB 290 BTA06-800CW 6A 800V 35mA TO-220AB 291 BTA06-800SW 6A 800V 10mA TO-220AB 292 BTA06-800TW 6A 800V 5mA TO-220AB 293 BTA06-800E 6A 800V 5~10mA TO-220AB 294 BTA06-800D 6A 800V 1~5mA TO-220AB 295 BTA06-800SAP 6A 800V 5~10mA TO-220AB 296 BTB06-400B 6A 400V 35~50mA TO-220A 297 BTB06-400BW 6A 400V 50mA TO-220AB序号产品型号电流电压触发电流封装形式298 BTB06-400C 6A 400V 25mA TO-220AB 299 BTB06-400CW 6A 400V 35mA TO-220AB 300 BTB06-400SW 6A 400V 10mA TO-220AB 301 BTB06-400TW 6A 400V 5mA TO-220AB 302 BTB06-400E 6A 400V 5~10mA TO-220AB 303 BTB06-400D 6A 400V 1~5mA TO-220AB 304 BTB06-400SAP 6A 400V 5~10mA TO-220AB 305 BTB06-600B 6A 600V 35~50mA TO-220A 306 BTB06-600BW 6A 600V 50mA TO-220AB 307 BTB06-600C 6A 600V 25mA TO-220AB 308 BTB06-600CW 6A 600V 35mA TO-220AB 309 BTB06-600SW 6A 600V 10mA TO-220AB 310 BTB06-600TW 6A 600V 5mA TO-220AB 311 BTB06-600E 6A 600V 5~10mA TO-220 312 BTB06-600D 6A 600V 1~5mA TO-220AB 313 BTB06-600SAP 6A 600V 5~10mA TO-220AB 314 BTB06-700B 6A 700V 35~50mA TO-220AB 315 BTB06-700BW 6A 700V 50mA TO-220AB 316 BTB06-700C 6A 700V 25mA TO-220AB 317 BTB06-700CW 6A 700V 35mA TO-220AB 318 BTB06-700SW 6A 700V 10mA TO-220AB 319 BTB06-700TW 6A 700V 5mA TO-220AB 320 BTB06-700E 6A 700V 5~10mA TO-220AB 321 BTB06-700D 6A 700V 1~5mA TO-220AB 322 BTB06-700SAP 6A 700V 5~10mA TO-220AB 323 BTB06-800B 6A 800V 35~50mA TO-220AB 324 BTB06-800BW 6A 800V 50mA TO-220AB序号产品型号电流电压触发电流封装形式325 BTB06-800C 6A 800V 25mA TO-220AB 326 BTB06-800CW 6A 800V 35mA TO-220AB 327 BTB06-800SW 6A 800V 10mA TO-220AB 328 BTB06-800TW 6A 800V 5mA TO-220AB 329 BTB06-800E 6A 800V 5~10mA TO-220AB 330 BTB06-800D 6A 800V 1~5mA TO-220AB 331 BTB06-800SAP 6A 800V 5~10mA TO-220AB 332 BTA08-400B 8A 400V 35~50mA TO-220AB 333 BTA08-400BW 8A 400V 50mA TO-220AB 334 BTA08-400C 8A 400V 25mA TO-220AB 335 BTA08-400CW 8A 400V 35mA TO-220AB 336 BTA08-400SW 8A 400V 10mA TO-220AB 337 BTA08-400TW 8A 400V 5mA TO-220AB 338 BTA08-400E 8A 400V 5~10mA TO-220AB 339 BTA08-400D 8A 400V 1~5mA TO-220AB 340 BTA08-400SAP 8A 400V 5~10mA TO-220AB 341 BTA08-600B 8A 600V 35~50mA TO-220AB 342 BTA08-600BW 8A 600V 50mA TO-220AB 343 BTA08-600C 8A 600V 25mA TO-220AB 344 BTA08-600CW 8A 600V 35mA TO-220AB 345 BTA08-600SW 8A 600V 10mA TO-220AB 346 BTA08-600TW 8A 600V 5mA TO-220AB 347 BTA08-600E 8A 600V 5~10mA TO-220AB 348 BTA08-600D 8A 600V 1~5mA TO-220AB 349 BTA08-600SAP 8A 600V 5~10mA TO-220AB 350 BTA08-700B 8A 700V 35~50mA TO-220AB 351 BTA08-700BW 8A 700V 50mA TO-220AB序号产品型号电流电压触发电流封装形式352 BTA08-700C 8A 700V 25mA TO-220AB 353 BTA08-700CW 8A 700V 35mA TO-220AB 354BTA08-700SW8A700V10mA TO-220AB 355BTA08-700TW8A700V5mA TO-220AB 356BTA08-700E8A700V5~10mA TO-220AB 357BTA08-700D8A700V1~5mA TO-220AB 358BTA08-700SAP8A700V5~10mA TO-220AB 359BTA08-800B8A800V35~50mA TO-220AB 360BTA08-800BW8A800V50mA TO-220AB 361BTA08-800C8A800V25mA TO-220AB 362BTA08-800CW8A800V35mA TO-220AB 363BTA08-800SW8A800V10mA TO-220AB 364BTA08-800TW8A800V5mA TO-220AB 365BTA08-800E8A800V5~10mA TO-220AB 366BTA08-800D8A800V1~5mA TO-220AB 367BTA08-800SAP8A800V5~10mA TO-220A 368BTA08-1000B8A1000V35~50mA TO-220AB 369BTA08-1000BW8A1000V50mA TO-220AB 370BTA08-1000C8A1000V25mA TO-220AB 371BTA08-1000CW8A1000V35mA TO-220AB 372BTA08-1000SW8A1000V10mA TO-220AB 373BTA08-1000TW8A1000V5mA TO-220AB 374BTA08-1000E8A1000V5~10mA TO-220AB 375BTA08-1000D8A1000V1~5mA TO-220AB 376BTA08-1000SAP8A1000V5~10mA TO-220AB 377BTB08-400B8A400V35~50mA TO-220AB 378BTB08-400BW8A400V50mA TO-220AB序号产品型号电流电压触发电流封装形式379BTB08-400C8A400V25mA TO-220AB 380BTB08-400CW8A400V35mA TO-220AB 381BTB08-400SW8A400V10mA TO-220AB 382BTB08-400TW8A400V5mA TO-220AB 383BTB08-400E8A400V5~10mA TO-220A 384BTB08-400D8A400V1~5mA TO-220AB 385BTB08-400SAP8A400V5~10mA TO-220AB 386BTB08-600B8A600V35~50mA TO-220A 387BTB08-600BW8A600V50mA TO-220AB 388BTB08-600C8A600V25mA TO-220AB 389BTB08-600CW8A600V35mA TO-220AB 390BTB08-600SW8A600V10mA TO-220AB 391BTB08-600TW8A600V5mA TO-220AB 392BTB08-600E8A600V5~10mA TO-220AB 393BTB08-600D8A600V1~5mA TO-220AB 394BTB08-600SAP8A600V5~10mA TO-220AB 395BTA10-400B10A400V35~50mA TO-220AB 396BTA12-400B12A400V35~50mA TO-220AB 397BTA16-400B16A400V35~50mA TO-220AB 398BTA20-400B20A400V35~50mA TO-220AB 399BTA24-600B25A600V35~50mA TO-220AB 400BTA25-600B25A600V35~50mA TO-220AB 401BTA25-600BW25A600V50mA TO-220AB 402BTA26-600B25A600V35~50mA TO-220AB 403BTA40-600B40A600V35~50mA BTW67 404BTA40-600BW40A600V50mA BTW67 405BTA41-600B40A600V35~50mA BTW67序号产品型号电流电压触发电流封装形式406BTA41-600BW40A600V50mA BTW67 407HBT131A1A600V3~7mA TO-92 408HBT131CA1A600V3~5mA TO-92 409HBT131GA1A800V3~5mA TO-92 410HBT134CI4A600V5~10mA TO-251 411HBT134DI4A600V5~10mA TO-251 412HBT134GI4A800V5~10mA TO-251 413HBT134HI4A600V5~10mA TO-251 414HBT134NE4A600V10~25mA SOT-82 415HBT134I4A600V10~25mA TO-251 416HBT134CNE4A600V5~10mA SOT-82 417HBT134DNE4A600V5~10mA SOT-82 418HBT134GNE4A800V5~10mA SOT-82 419HBT134HNE4A800V5~10mA SOT-82 420HBT136AE4A600V10mA TO-220AB 421HBT204I4A600V10mA TO-251 422HBT204E4A600V15mA TO-220AB 423HBT136AE4A600V10~25mA TO-220AB 424HBT136AHE4A600V5~10mA TO-220AB 425HBT136BE6A600V10~25mA TO-220AB 426HBT137E8A600V10~25mA TO-220AB 427HBT137DE8A600V25mA TO-220AB 428HBT138E8A600V10~25mA TO-220AB 429HBT15220A800V32mA TO-220AB 430HBT1690.8A400V200uA TO-92 431HBT169M0.8A400V200uA SOT-89。

bta06600b可控硅参数

bta06600b可控硅参数
BTA06600B是一个可控硅的型号，其参数包括：
1. 最大可控电流（ITM）：具体数值取决于具体型号，一般在10A至40A之间。

2. 最大耐压（VDRM）：指可控硅在正向电压下能够承受的最大电压，一般在600V至1200V之间。

3. 最大门电流（IGM）：指可控硅的门极电流，一般在10mA至50mA之间。

4. 触发电流（Igt）：指可控硅的最低触发电流，即需要施加到门极的电流大小，一般在5mA至50mA之间。

5. 保持电流（IH）：指可控硅在触发后能够维持的最小电流，一般在5mA至50mA之间。

6. 关断电流（IH）：指可控硅在关断状态下流过的最大电流，一般在10mA至50mA之间。

7. 最大导通压降（Vtm）：指可控硅在导通状态下的最大电压降，一般在1V至2V之间。

8. 最大开态电流（ITSM）：指可控硅在开态时能够承受的最大电流，一般在200A至500A之间。

以上是一些常见的可控硅参数，具体型号的参数可通过查询相关的数据手册或规格表获取。

BTA16BW中文资料

BTA16BW/CW BTB16BW/CWMarch 1995SNUBBERLESS TRIACSSymbol ParameterValueUnit I T(RMS)RMS on-state current (360°conduction angle)BTA Tc =80°C 16ABTBTc =90°C I TSMNon repetitive surge peak on-state current (Tj initial =25°C )tp =8.3ms 170Atp =10ms 160I 2t I 2t valuetp =10ms 128A 2s dI/dtCritical rate of rise of on-state currentGate supply :I G =500mA di G /dt =1A/µsRepetitive F =50Hz 20A/µsNon Repetitive100Tstg Tj Storage and operating junction temperature range-40to +150-40to +125°C °C TlMaximum lead temperature for soldering during 10s at 4.5mm from case260°CTO220AB (Plastic)A1A2G.HIGH COMMUTATION :(dI/dt)c >14A/ms without snubber.HIGH SURGE CURRENT :I TSM =160A .V DRM UP TO 800V .BTA Family :INSULATING VOLTAGE =2500V (RMS)(UL RECOGNIZED :E81734)DESCRIPTIONSymbol ParameterBTA /BTB16-...BW/CWUnit400600700800V DRM V RRM Repetitive peak off-state voltage Tj =125°C400600700800VABSOLUTE RATINGS (limiting values)FEATURESThe BTA/BTB16BW/CW triac family are high per-formance glass passivated chips technology.The SNUBBERLESS ™concept offer suppression of RC network and it is suitable for application such as phase control and static switching on in-ductive or resistive load.1/5GATE CHARACTERISTICS (maximum values)Symbol ParameterValue Unit Rth (j-a)Junction to ambient60°C/W Rth (j-c)DC Junction to case for DCBTA 3.1°C/WBTB2.3Rth (j-c)AC Junction to case for 360°conduction angle(F=50Hz)BTA 2.3°C/W BTB1.75SymbolTest ConditionsQuadrantSuffix UnitBWCW I GTV D =12V(DC)R L =33ΩTj=25°CI-II-IIIMIN 21mAMAX5035V GT V D =12V(DC)R L =33ΩTj=25°C I-II-III MAX 1.5V V GD V D =V DRM R L =3.3k ΩTj=125°C I-II-III MIN 0.2V tgt V D =V DRM I G =500mA dI G /dt =3A/µs Tj=25°C I-II-III TYP 2µsI LI G =1.2I GTTj=25°CI-III TYP 40-mA II TYP 80-I-III MAX -50IIMAX -80I H *I T =500mA gate open Tj=25°C MAX 5035mA V TM *I TM =22.5A tp=380µs Tj=25°C MAX 1.60V I DRM I RRM V DRM Rated V RRMRatedTj=25°C MAX 0.01mA Tj=125°C MAX 2dV/dt *Linear slope up to V D =67%V DRM gate open Tj=125°CMIN 500250V/µsTYP750500(dI/dt)c *Without snubberTj=125°CMIN 148.5A/msTYP2817*For either polarity of electrode A 2voltage with reference to electrode A 1.P G (AV)=1WP GM =10W (tp =20µs)I GM =4A (tp =20µs)V GM =16V (tp =20µs).ELECTRICAL CHARACTERISTICSTHERMAL RESISTANCESBTA16BW/CW /BTB16BW/CW2/5ORDERING INFORMATIONPackage I T(RMS)V DRM/V RRM Sensitivity SpecificationA V BW CWBTA (Insulated)16400X X600X X700X X800X XBTB (Uninsulated)400X X 600X X 700X X 800X XFig.1:Maximum RMS power dissipation versus RMS on-state current(F=50Hz).(Curves are cut off by(dI/dt)c limitation)Fig.2:Correlation between maximum RMS power dissipation and maximum allowable temperatures(T amb and T case)for different thermal resistances heatsink+ contact(BTA).Fig.3:Correlation between maximum RMS power dissipation and maximum allowable temperatures(T amb and T case)for different thermal resistances heatsink+ contact(BTB).Fig.4:RMS on-state current versus case temperature.BTA16BW/CW/BTB16BW/CW3/5Fig.6:Relative variation of gate trigger current and holding current versus junction temperature.Fig.7:Non Repetitive surge peak on-state current versus number of cycles.Fig.8:Non repetitive surge peak on-state current for a sinusoidal pulse with width :t ≤ 10ms,and corresponding value of I 2t.Fig.9:On-state characteristics (maximum values).1E-31E-21E-11E+01E+11E+25E+20.010.11Zth/Rth Zth(j-c)Zth(j-a)tp(s)Fig.5:Relative variation of thermal impedance versus pulse duration.BTA16BW/CW /BTB16BW/CW4/5PACKAGE MECHANICAL DATA TO220AB PlasticCooling method :CMarking :type number Weight :2.3gRecommended torque value :0.8m.N.Maximum torque value :1m.N.I==AGDBCFPN OMLJHREF.DIMENSIONSMillimeters Inches Min.Max.Min.Max.A 10.2010.500.4010.413B 14.2315.870.5600.625C 12.7014.700.5000.579D 5.85 6.850.2300.270F 4.500.178G 2.54 3.000.1000.119H 4.48 4.820.1760.190I 3.55 4.000.1400.158J 1.15 1.390.0450.055L 0.350.650.0130.026M 2.10 2.700.0820.107N 4.58 5.580.180.22O 0.80 1.200.0310.048P0.640.960.0250.038Information furnished is believed to be accurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specifications mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.©1995SGS-THOMSON Microelectronics -Printed in Italy -All rights reserved.SGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia -Brazil -France -Germany -Hong Kong -Italy -Japan -Korea -Malaysia -Malta -Morocco -The Nether-lands -Singapore -Spain -Sweden -Switzerland -Taiwan -Thailand -United Kingdom -U.S.A.BTA16BW/CW /BTB16BW/CW5/5。

bta316可控硅参数

bta316可控硅参数
BTA316可控硅是一种三端双向可控硅，具有高灵敏度和低触发电流
的特点。

下面将从以下几个方面详细介绍BTA316可控硅的参数。

1. 电气参数
BTA316可控硅的最大反向电压为600V，最大正向电流为16A，最大触发电压为1.5V。

其静态特性包括导通压降、保持电流和关断电流等
参数。

其中导通压降为1.6V，保持电流为10mA，关断电流为5mA。

2. 热学参数
BTA316可控硅的最大结温为125℃，最大耗散功率为1.6W。

在正常工作条件下，其热阻为50℃/W。

3. 封装形式
BTA316可控硅采用TO-220AB封装形式，封装材料为环氧树脂。

4. 其他参数
BTA316可控硅的触发方式包括直接触发和间接触发两种方式。

直接触发时需要提供足够的正向脉冲电流来使其导通；间接触发则需要在门极和阳极之间加入一个外部元件来实现。

此外，在使用BTA316可控硅时还需要注意其最大电压和最大电流的限制，以免超过其额定值而造成损坏。

同时，由于可控硅具有单向导通性，因此在接线时需要注意极性。

总之，BTA316可控硅是一种常用的三端双向可控硅，具有高灵敏度和低触发电流的特点。

了解其参数对于正确使用和应用该器件具有重要意义。

bat16-800b可控硅参数

bat16-800b可控硅参数
BAT16-800B是一种可控硅，具有以下参数：
- 可控硅（也称为触发二极管）是一种电子器件，可通过输入电信号来控制电流的通断。

BAT16-800B的可控硅参数是在电流和电压等方面的特性。

- BAT16-800B的最大正向电流（IFRM）是16A，即在正向电压下，电流最大可达16安培。

- BAT16-800B的最大反向电压（VRM）是800V，即在反向电压下，电压最大可达800伏特。

- BAT16-800B的触发电流（IT）是 15 mA，即需要输入至少15毫安的电流来控制开关。

- BAT16-800B的触发电压（VT）是0.8V，即在输出端需要输入至少0.8伏特的电压来控制开关。

- BAT16-800B具有良好的导通性能、高边沿速度和低触发电流等特点。

需要注意的是，这些参数可能会因不同生产商的原因而略有差异，因此最好在使用时查找特定制造商提供的详细规格。

BTA16600B双向可控硅晶闸管应用及详细资料

BTA16-600B 双向可控硅晶闸管应用及详细资料BTA16-600B 主要参数电流 -IT(RMS):电压 -VDRM: ≥ 600V触发电流 : IGT ≤18-25mA脚位排列 : T1-T2-G 〔A1-A2-G〕； A1 主电极， A2 主电极， G 门极BTA16 引脚图附：双向可控硅的检测用万用表电阻R*1 Ω挡，用红、黑两表笔分别测任意两引脚间正反向电阻，结果其中两组读数为无量大。

假设一组为数十欧姆时，该组红、黑表所接的两引脚为第一阳极 A1 和控制极 G，另一空脚即为第二阳极 A2。

确定 A1、G 极后，再仔细测量 A1、G 极间正、反向电阻，读数相对较小的那次测量的黑表笔所接的引脚为第一阳极 A1，红表笔所接引脚为控制极G。

将黑表笔接已确定的第二阳极A2，红表笔接第一阳极 A1，此时万用表指针不应发生偏转，阻值为无量大。

再用短接线将 A2、G 极刹时短接，给 G 极加上正向触发电压，A2、 A1 间阻值约 10 欧姆左右。

随后断开A2、 G 间短接线，万用表读数应保持10 欧姆左右。

互换红、黑表笔接线，红表笔接第二阳极A2，黑表笔接第一阳极 A1。

同样万用表指针应不发生偏转，阻值为无量大。

用短接线将 A2、G 极间再次刹时短接，给G 极加上负的触发电压， A1、A2 间的阻值也是 10 欧姆左右。

随后断开 A2、 G 极间短接线，万用表读数应不变，保持在10 欧姆左右。

吻合以上规律，说明被测双向可控硅未损坏且三个引脚极性判断正确。

检测较大功率可控硅时，需要在万用表黑笔中串接一节干电池，以提高触发电压。

如需供应购置或其他中文技术支持请与我获取联系：公司：MSN：。

bta47600b可控硅参数

BTA47600B是一款可控硅，它的参数主要包括以下几个方面：
平均通态电流：这是可控硅在正常工作条件下的平均电流值，对于BTA47600B来说，这个参数是47A。

通态平均电压：这是可控硅在通态时的平均电压降，对于BTA47600B来说，这个参数是1.7V。

触发电流：这是使可控硅从截止状态转变为通态所需的最小电流，对于BTA47600B来说，这个参数是50mA。

触发电压：这是使可控硅从截止状态转变为通态所需的最小电压，对于BTA47600B来说，这个参数是1.5V。

维持电流：这是保持可控硅在通态所需的最小电流，对于BTA47600B来说，这个参数是150mA。

最大反向电压：这是可控硅所能承受的最大反向电压，对于BTA47600B来说，这个参数是600V。

bta41600b双向可控硅参数

btaxxxb双向可控硅参数1. 概述BTAxxxB是一种双向可控硅，广泛应用于交流电路中。

其参数包括电压、电流和功率等，下面将对其各项参数做详细介绍。

2. 电压参数BTAxxxB的最大可重复峰值电压(VDRM)为600伏，最大非重复峰值电压(VRRM)为700伏。

这些参数表明了BTAxxxB在正常工作条件下可以承受的最大电压值。

3. 电流参数BTAxxxB的最大均值电流(IT(AV))为25安培，最大尖脉冲电流(ITSM)为260安培。

这些参数标志着BTAxxxB能够承受的最大电流值，从而保证器件在正常工作条件下不会受到损坏。

4. 功率参数BTAxxxB的最大消耗功率(PG(AV))为25瓦，最大尖脉冲功率(PGM)为380瓦。

这些参数表明了BTAxxxB可以承受的最大功率值，从而保证器件在正常工作条件下不会因功率过载而损坏。

5. 其他参数- 触发电流(IH)：BTAxxxB的触发电流为50毫安培，这是使其进入导通状态所需的最小电流值。

- 保持电流(ID)：BTAxxxB的保持电流为50毫安培，这是在其进入导通状态后需要保持的电流值。

- 耐电压：BTAxxxB的耐电压为2300伏，保证了其在正常工作条件下不会出现击穿现象。

- 结构：BTAxxxB采用了反向并联结构，能够保证其在工作过程中有较好的可靠性和稳定性。

6. 结论通过对BTAxxxB双向可控硅的参数进行分析，可以看出其具有较高的电压、电流和功率承受能力，适用于各种交流电路中。

其触发电流、保持电流和耐电压等参数也保证了其在正常工作条件下能够稳定可靠地工作。

BTAxxxB双向可控硅是一种性能优良的器件，为交流电路提供了重要的支持。

接下来我们将对BTAxxxB双向可控硅的参数进行更深入的解析，从而更好地理解这一器件在交流电路中的应用和性能特点。

7. 温度参数BTAxxxB的最大工作温度为125摄氏度，最大存储温度为-40摄氏度至150摄氏度。

BTA16_600B标准双向可控硅

Fig.4 : RMS on-state current versus case temperature.

Fig.5 : Relative variation of thermal impedance versus pulse duration.
Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature.
bta16600b标准双向可控硅双向可控硅双向可控硅工作原理双向可控硅调光电路三端双向可控硅双向可控硅参数双向可控硅应用双向可控硅调压电路双向可控硅应用电路双向可控硅作用
BTA16 B BTB16 B
STANDARD TRIACS
. . .
FEATURES HIGH SURGE CURRENT CAPABILITY COMMUTATION : (dV/dt)c > 10V/µs BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734)
DESCRIPTION The BTA/BTB16 B triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values)

双向可控硅命名方式

双向可控硅命名方式,晶闸管,整流器双向可控硅是怎样命名的?双向可控硅为什么称为“TRIAC”?三端：TRIode(取前三个字母)交流半导体开关：ACsemiconductor switch(取前两个字母)以上两组名词组合成“TRIAC”中文译意“三端双向可控硅开关”。

由此可见“TRIAC”是双向可控硅的统称。

另:双向：Bi-directional(取第一个字母)控制：Controlled (取第一个字母) 整流器：Rectifier (取第一个字母)再由这三组英文名词的首个字母组合而成：“BCR”，中文译意：双向可控硅。

以“BCR”来命名双向可控硅的典型厂家如日本三菱如：BCR1AM-12、BCR8KM、BCR08AM等等。

--------------双向：Bi-directional (取第一个字母) 三端：Triode (取第一个字母)由以上两组单词组合成“BT”，也是对双向可控硅产品的型号命名,典型的生产商如：意法ST公司、荷兰飞利浦-Philips公司，均以此来命名双向可控硅。

代表型号如：PHILIPS 的BT131-600D、BT134-600E、BT136-600E、BT138-600E、BT139-600E、、等。

这些都是四象限/非绝缘型/双向可控硅；Philips公司的产品型号前缀为“BTA”字头的，通常是指三象限的双向可控硅。

三象限的品种主要应用于电机电路、三相市电输入的电路、承受的瞬间浪涌电流高。

-------------------而意法ST公司，则以“BT”字母为前缀来命名元件的型号，并且在“BT”后加“A”或“B”来表示绝缘与非绝缘。

组成：“BTA”、“BTB”系列的双向可控硅型号，如：四象限、绝缘型、双向可控硅：BTA06-600C、BTA08-600C、BTA10-600B、BTA12-600B、BTA16-600B、BTA41-600、、、等等；四象限、非绝缘、双向可控硅：BTB06-600C、BTB08-600C、BTB10-600B、BTB12-600B、BTB16-600B、BTB41-600、、、等等；ST公司所有产品型号的后缀字母(型号最后一个字母)带“W”的，均为“三象限双向可控硅”。

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BTA16B BTB16BMarch 1995STANDARD TRIACSSymbol ParameterValueUnit I T(RMS)RMS on-state current (360°conduction angle)BTA Tc =80°C 16ABTBTc =90°C I TSMNon repetitive surge peak on-state current (Tj initial =25°C )tp =8.3ms 170Atp =10ms 160I 2t I 2t valuetp =10ms 128A 2s dI/dtCritical rate of rise of on-state currentGate supply :I G =500mA di G /dt =1A/µsRepetitive F =50Hz 10A/µsNon Repetitive50Tstg Tj Storage and operating junction temperature range-40to +150-40to +125°C °C TlMaximum lead temperature for soldering during 10s at 4.5mm from case260°CTO220AB (Plastic)A1A2G.HIGH SURGE CURRENT CAPABILITY .COMMUTATION :(dV/dt)c >10V/µs .BTA Family :INSULATING VOLTAGE =2500V (RMS)(UL RECOGNIZED :E81734)DESCRIPTIONSymbol ParameterBTA /BTB16-...B Unit400600700800V DRM V RRM Repetitive peak off-state voltage Tj =125°C400600700800VABSOLUTE RATINGS (limiting values)FEATURESThe BTA/BTB16B triac family are high perform-ance glass passivated PNPN devices.These parts are suitables for general purpose ap-plications where high surge current capability is re-quired.Application such as phase control and static switching on inductive or resistive load.1/5GATE CHARACTERISTICS (maximum values)Symbol ParameterValue Unit Rth (j-a)Junction to ambient60°C/W Rth (j-c)DC Junction to case for DCBTA 2.9°C/WBTB2.3Rth (j-c)AC Junction to case for 360°conduction angle(F=50Hz)BTA 2.2°C/W BTB1.75SymbolTest ConditionsQuadrantSuffix UnitBI GTV D =12V(DC)R L =33ΩTj=25°CI-II-III MAX 50mA IVMAX 100V GT V D =12V(DC)R L =33ΩTj=25°C I-II-III-IV MAX 1.5V V GD V D =V DRM R L =3.3k ΩTj=125°C I-II-III-IV MIN 0.2V tgt V D =V DRM I G =500mA dI G /dt =3A/µs Tj=25°C I-II-III-IV TYP 2µs I LI G =1.2I GTTj=25°CI-III-IV TYP40mA II70I H *I T =500mA gate open Tj=25°C MAX 50mA V TM *I TM =22.5A tp=380µs Tj=25°C MAX 1.6V I DRM I RRM V DRM Rated V RRMRatedTj=25°C MAX 0.01mA Tj=125°C MAX 2dV/dt *Linear slope up to V D =67%V DRM gate open Tj=125°CMIN 250V/µs (dV/dt)c *(dI/dt)c =7A/msTj=125°C MIN 10V/µs*For either polarity of electrode A 2voltage with reference to electrode A 1.P G (AV)=1WP GM =10W (tp =20µs)I GM =4A (tp =20µs)V GM =16V (tp =20µs).ELECTRICAL CHARACTERISTICSTHERMAL RESISTANCESBTA16B /BTB16B2/5Fig.1:Maximum RMS power dissipation versus RMS on-state current (F=50Hz).(Curves are cut off by (dI/dt)c limitation)Fig.3:Correlation between maximum RMS power dissipation and maximum allowable temperatures (T amb and T case )for different thermal resistances heatsink +contact (BTB).Fig.4:RMS on-state current versus case temperature.1E-31E-21E-11E+01E+11E+25E+20.010.11Zth/Rth Zth(j-c)Zth(j-a)tp(s)Fig.5:Relative variation of thermal impedance versus pulse duration.Fig.6:Relative variation of gate trigger current and holding current versus junction temperature.Fig.2:Correlation between maximum RMS power dissipation and maximum allowable temperatures (T amb and T case )for different thermal resistances heatsink +contact (BTA).BTA16B /BTB16B3/5Fig.8:Non repetitive surge peak on-state current for a sinusoidal pulse with width :t ≤ 10ms,and corresponding value of I 2t.Fig.9:On-state characteristics (maximum values).Fig.7:Non Repetitive surge peak on-state current versus number of cycles.BTA16B /BTB16B4/5PACKAGE MECHANICAL DATA TO220AB PlasticCooling method :CMarking :type number Weight :2.3gRecommended torque value :0.8m.N.Maximum torque value :1m.N.I==AGDBCFPN OMLJHREF.DIMENSIONSMillimeters Inches Min.Max.Min.Max.A 10.2010.500.4010.413B 14.2315.870.5600.625C 12.7014.700.5000.579D 5.85 6.850.2300.270F 4.500.178G 2.54 3.000.1000.119H 4.48 4.820.1760.190I 3.55 4.000.1400.158J 1.15 1.390.0450.055L 0.350.650.0130.026M 2.10 2.700.0820.107N 4.58 5.580.180.22O 0.80 1.200.0310.048P0.640.960.0250.038Information furnished is believed to be accurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specifications mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.©1995SGS-THOMSON Microelectronics -Printed in Italy -All rights reserved.SGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia -Brazil -France -Germany -Hong Kong -Italy -Japan -Korea -Malaysia -Malta -Morocco -The Nether-lands -Singapore -Spain -Sweden -Switzerland -Taiwan -Thailand -United Kingdom -U.S.A.BTA16B /BTB16B5/5。