PHP2N50中文资料

GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER
MAX.UNIT field-effect power transistor in a plastic envelope featuring high V DS Drain-source voltage 500V avalanche energy capability,stable I D Drain current (DC)
2A off-state characteristics,fast P tot
Total power dissipation
50W switching and high thermal cycling R DS(ON)
Drain-source on-state resistance
5
Ω
performance with low thermal resistance.Intended for use in Switched Mode Power Supplies (SMPS),motor control circuits and general purpose switching applications.
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER CONDITIONS
MIN.MAX.UNIT I D
Continuous drain current T mb = 25 ˚C; V GS = 10 V -2A T mb = 100 ˚C; V GS = 10 V - 1.3A I DM Pulsed drain current T mb = 25 ˚C -8A P D
Total dissipation
T mb = 25 ˚C -50W ∆P D /∆T mb Linear derating factor T mb > 25 ˚C
-0.4W/K V GS Gate-source voltage -± 30V E AS Single pulse avalanche V DD ≤ 50 V; starting T j = 25˚C; R GS = 50 Ω;-100mJ energy
V GS = 10 V
I AS Peak avalanche current V DD ≤ 50 V; starting T j = 25˚C; R GS = 50 Ω;-2A V GS = 10 V
T j , T stg
Operating junction and - 55
150
˚C
storage temperature range
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.TYP.MAX.UNIT R th j-mb Thermal resistance junction to -- 2.5K/W mounting base
R th j-a
Thermal resistance junction to -60
-K/W
ambient
ELECTRICAL CHARACTERISTICS
T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER
CONDITIONS
MIN.TYP.MAX.UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; I D = 0.25 mA 500--V voltage
∆V (BR)DSS /Drain-source breakdown
V DS = V GS ; I D = 0.25 mA
-0.6-V/K ∆T j
voltage temperature coefficient R DS(ON)Drain-source on resistance V GS = 10 V; I D = 1 A - 3.15ΩV GS(TO)Gate threshold voltage V DS = V GS ; I D = 0.25 mA 2.0 3.0 4.0V g fs Forward transconductance V DS = 30 V; I D = 1 A 0.5 1.3-S I DSS Drain-source leakage current V DS = 500 V; V GS = 0 V
-125µA V DS = 400 V; V GS = 0 V; T j = 125 ˚C -30250µA I GSS Gate-source leakage current V GS = ±30 V; V DS = 0 V
-10200nA Q g(tot)Total gate charge I D = 2 A; V DD = 400 V; V GS = 10 V -2025nC Q gs Gate-source charge
-23nC Q gd Gate-drain (Miller) charge -1215nC t d(on)Turn-on delay time V DD = 250 V; I D = 2 A;-10-ns t r
Turn-on rise time R G = 24 Ω; R D = 120 Ω
-20-ns t d(off)Turn-off delay time -60-ns t f Turn-off fall time -20-ns L d Internal drain inductance Measured from contact screw on - 3.5-nH tab to centre of die
L d Internal drain inductance Measured from drain lead 6 mm - 4.5-nH from package to centre of die L s Internal source inductance Measured from source lead 6 mm -7.5-nH from package to source bond pad C iss Input capacitance V GS = 0 V; V DS = 25 V; f = 1 MHz
-236-pF C oss Output capacitance -40-pF C rss
Feedback capacitance
-22
-pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER
CONDITIONS MIN.TYP.MAX.UNIT I S Continuous source current T mb = 25˚C --2A (body diode)
I SM Pulsed source current (body T mb = 25˚C --8A diode)
V SD Diode forward voltage I S = 2 A; V GS = 0 V
-- 1.2V t rr Reverse recovery time I S = 2 A; V GS = 0 V; dI/dt = 100 A/µs
-300-ns Q rr
Reverse recovery charge
- 2.1
-µC
MECHANICAL DATA
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for TO220 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.。