WF512K64-150G4WI5资料

V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
Operating Temp. (Ind.)
TA
-40
+85
°C
A9 Voltage for Sector Protect
VID
11.5
12.5
V
DC CHARACTERISTICS - CMOS COMPATIBLE (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
WF512K64-XG4WX5 - 20 grams typical
* This data sheet describes a product under development, not fully characterized, and is subject to change without notice.
ICC4
VCC = 5.5, CS = VIH, f = 5MHz
ICC3
VCC = 5.5, CS = VIH
VOL
IOL = 8.0 mA, VCC = 4.5
13
mA
1.2
mA
0.45
V
Output High Voltage
VOH1
IOH = -2.5 mA, VCC = 4.5
0.85 X VCC
or 4Mx8. ■ Commercial, Industrial and Military Temperature Ranges
■ 5 Volt Programming. 5V ± 10% Supply. ■ Low Power CMOS, 6.5mA Standby ■ Embedded Erase and Program Algorithms ■ TTL Compatible Inputs and CMOS Outputs ■ Built-in Decoupling Caps for Low Noise Operation ■ Page Program Operation and Internal Program Control Time ■ Weight
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
元器件交易网
WF512K64-XG4WX5
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Supply Voltage Range (VCC) Signal voltage range (any pin except A9) (2) Storage Temperature Range Lead Temperature (soldering, 10 seconds) Data Retention (Mil Temp) Endurance (write/erase cycles) (Mil Temp) A9 Voltage for sector protect (VID) (3)
Max Unit 100 pF 20 pF 20 pF 20 pF 100 pF
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.0
VCC + 0.5
V
Low VCC Lock-Out Voltage
VLKO
3.2
4.2
V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically is less than 2 mA/ MHz, with OE at VIH.
元器件交易网
WF512K64-XG4WX5
HI-RELIABILITY PRODUCT
512Kx64 5V FLASH MODULE PRELIMINARY*
FEATURES
■ Access Times of 70, 90, 120, 150ns ■ Packaging
116 lead, 40mm square, Hermetic CQFP (Package 504) ■ 100,000 Erase/Program Cycles Minimum ■ Sector Architect64-XG4WX5
AC CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter
VCC Active Current for Read (1)
ICC1
CS = VIL, OE = VIH, f = 5MHz
380
mA
VCC Active Current for Program or Erase (2)
ICC2
CS = VIL, OE = VIH
480
mA
VCC Standby Current VCC Static Current Output Low Voltage
CAPACITANCE (TA = +25°C)
Parameter
Symbol
Conditions
OE capacitance
COE VIN = 0 V, f = 1.0 MHz
WE capacitance
CWE VIN = 0 V, f = 1.0 MHz
CS capacitance
CCS VIN = 0 V, f = 1.0 MHz
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
µA
Output Leakage Current
ILOx32 VCC = 5.5, VIN = GND to VCC
10
µA
8 equal size sectors of 64KBytes each Any combination of sectors can be concurrently erased.
Also supports full chip erase ■ Organized as 512Kx64, user configurable as 1Mx32, 2Mx16,
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC voltage on output and I/O pins is VCC + 0.5V. During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is +13.5V which may overshoot to 14.0 V for periods up to 20ns.
Note: Programming information available upon request.
FIG. 1
I/O2
I/O1
I/O0
VCC
WE2
CS2
NC
A0
A1
A2
A3
A4
WE1
CS1
NC
CS8
WE8
A5
PIN CONFIGURATION FOR WF512K64-XG4WX5
TOP VIEW
I/O34
I/O33
I/O32
VCC
WE6
CS6
NC
A10
A11
A12
A13
A14
WE5
CS5
OE
CS4
WE4
A15
A16
A17
A18
NC
NC
CS3
WE3
VCC
I/O31
I/O30
I/O29
May 1999 Rev.2
1
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
Unit
-55 to +125
°C
-2.0 to +7.0
V
-2.0 to +7.0
V
-65 to +150
°C
+300
°C
20 years
100,000 cycles min.
-2.0 to +14.0
V
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability.
77
I/O38
76
I/O37
75
I/O36
74
I/O35
8 I/O8-15
8 I/O...
8 I/O56-63
PIN DESCRIPTION
I/O0-63 A0-18 WE1-8 CS1-8 OE VCC GND NC
Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected
99
I/O57
I/O0-7
98
I/O56
97
GND
96
I/O55
95
I/O54
94
I/O53
93
I/O52
92
I/O51
91
I/O50
90
I/O49
89
I/O48
88
GND
87
I/O47
86
I/O46
85
I/O45
84
I/O44
83
I/O43
82
I/O42
81
I/O41
80
I/O40
79
GND
78
I/O39
34
I/O20
35
I/O21
36
I/O22
37
I/O23
38
GND
39
I/O24
40
I/O25
41
I/O26
42
I/O27
43
I/O28
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
102
I/O60
8
101
I/O59
100
I/O58
Data I/O capacitance
CI/O VI/O = 0 V, f = 1.0 MHz
Address input capacitance CAD VIN = 0 V, f = 1.0 MHz
This parameter is guaranteed by design but not tested.
114
115
116
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
I/O3
16
I/O4
17
I/O5
18
I/O6
19
I/O7
20
GND
21
I/O8
22
I/O9
23
I/O10
24
I/O11
25
I/O12
26
I/O13
27
I/O14
28
I/O15
29
GND
30
I/O16
31
I/O17
32
I/O18
33
I/O19
OE A0-18
A6
A7
A8
A9
NC
CS7
WE7
VCC
I/O63
I/O62
I/O61
BLOCK DIAGRAM
WE1 CS1
WE2 CS2
WEx CSx
1 512K x 8
2 512K x 8
......
WE8 CS8
8 512K x 8
103
104
105
106
107
108
109
110
111
112
113