COPPER-BASED ALLOY SPUTTERING TARGET
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专利名称：COPPER-BASED ALLOY SPUTTERING TARGET
发明人：IKEDA, Makoto,池田 真
申请号：JP2015/075916
申请日：20150911
公开号：WO2016/132578A1
公开日：
20160825
专利内容由知识产权出版社提供
摘要：This copper-based alloy sputtering target contains from 4% by mass to 16% by mass (inclusive) of tin and from 4% by mass to 11% by mass (inclusive) of aluminum, with the balance made up of copper and unavoidable impurities. It is preferable for this target that R > R is satisfied if R is the volume resistivity of a protective layer at room temperature (25°C) before annealing, said protective layer being directly formed on a glass substrate with use of the target, and R is the volume resistivity of the protective layer after being annealed at 350°C for 30 minutes in the atmosphere.
申请人：MITSUI MINING & SMELTING CO., LTD.,三井金属鉱業株式会社
地址：〒1418584 JP,〒1418584 JP
国籍：JP,JP
代理人：Showa International Patent Firm,特許業務法人翔和国際特許事務所
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