HYB3165405AT-60资料

ROW ADDR X ROW ROW ROW ROW ROW n/a ROW n/a ROW n/a ROW X X ROW ROW X
COL ADDR X COL COL COL COL COL COL COL COL COL COL n/a n/a n/a COL COL X
I/O1I/O4 High Impedance Data Out Data In Data In Data Out, Data In Data Out Data Out Data In Data In Data Out, Data In Data Out, Data In High Impedance High Impedance High Impedance Data Out Data In High Impedance
元器件交易网
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
HYB 3164405AJ/AT(L) -40/-50/-60 HYB 3165405AJ/AT(L) -40/-50/-60
Advanced Information
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Single + 3.3 V (± 0.3V) power supply Low power dissipation: max. 450 active mW ( HYB 3164405AJ/AT(L)-40) max. 360 active mW ( HYB 3164405AJ/AT(L)-50) max. 324 active mW ( HYB 3164405AJ/AT(L)-60) max. 612 active mW ( HYB 3165405AJ/AT(L)-40) max. 405 active mW ( HYB 3165405AJ/AT(L)-50) max. 432 active mW ( HYB 3165405AJ/AT(L)-60) 7.2 mW standby (LVTTL) 3.24 mW standby (LVMOS) 720 µA standby for L-version Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh Self refresh (L-version only) 8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164405AJ/AT) 4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165405AJ/AT) 256 msec refresh period for L-versions Plastic Package: P-SOJ-32-1 400 mil HYB 3164(5)400AJ P-TSOPII-32-1 400 mil HYB 3164(5)400AT(L)
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16 777 216 words by 4-bit organization 0 to 70 °C operating temperature Hyper Page Mode - EDO - operation Performance: -40 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/write cycle time Hyper page mode (EDO) cycle time 40 10 20 69 16 -50 50 13 25 84 20 -60 60 15 30 104 25 ns ns ns ns ns
RAS H L L L L L L L L L L L H-L H-L L-H-L L-H-L H-L
CAS H-X L L L L H-L H-L H-L H-L H-L H-L H L L L L L
WE X H L H-L H-L H H L L H-L H-L X H L H L H
OE X L X H L-H L L X X L-H L-H X X X L X X
VCC I/O1 I/O2 N.C. N.C. N.C. N.C. WE RAS . A0 A1 A2 A3 A4 A5 VCC
O 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
Semiconductor Group
4
元器件交易网
HYB3164(5)405AJ/AT(L)-40/-50/-60 16M x 4-DRAM
Semiconductor Group
3
元器件交易网
HYB3164(5)405AJ/AT(L)-40/-50/-60 16M x 4-DRAM
TRUTH TABLE
FUNCTION Standby Read Early-Write Delayed-Write Read-Modify-Write Hyper Page Mode Read 1st Cycle 2nd Cycle Hyper Page Mode Write 1st Cycle 2nd Cycle Hyper Page Mode RMW 1st Cycle 2st Cycle RAS only refresh CAS-before-RAS refresh Test Mode Entry Hidden Refresh READ WRITE Self Refresh (L-version only)
Ordering Code
Package
Descriptions
Semiconductor Group
2
元器件交易网
HYB3164(5)405AJ/AT(L)-40/-50/-60 16M x 4-DRAM
P-SOJ-32-1 (400 mil) P-TSOPII-32-1 (400 mil)
VSS I/O4 I/O3 N.C. N.C. N.C. CAS OE A12 / N.C. * A11 A10 A9 A8 A7 A6 VSS
* Pin 24 is A12 for HYB 3164405AJ/AT(L) and N.C. for HYB 3165405AJ/AT(L) Pin Configuration Pin Names A0-A12 A0-A11 RAS OE I/O1-I/O4 CAS WE Vcc Vss Address Inputs for 8k-refresh version HYB 3164405AJ/AT(L) Address Inputs for 4k-refresh version HYB 3165405AJ/AT(L) Row Address Strobe Output Enable Data Input/Output Column Address Strobe Read/Write Input Power Supply ( + 3.3V) Ground
Semiconductor GroupB3164(5)405AJ/AT(L)-40/-50/-60 16M x 4-DRAM
This HYB3164(5)405A is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)405A operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)405A to be packaged in a 400mil wide SOJ-32 or TSOP-32 plastic package. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment.The HYB3164(5)405ATL parts have a very low power „sleep mode“ supported by Self Refresh. Ordering Information Type
8k-refresh versions: HYB 3164405AJ-40 HYB 3164405AJ-50 HYB 3164405AJ-60 HYB 3164405AT-40 HYB 3164405AT-50 HYB 3164405AT-60 HYB 3164405ATL-50 HYB 3164405ATL-60 4k-refresh versions: HYB 3165405AJ-40 HYB 3165405AJ-50 HYB 3165405AJ-60 HYB 3165405AT-40 HYB 3165405AT-50 HYB 3165405AT-60 HYB 3165405ATL-50 HYB 3165405ATL-60 P-SOJ-32-1 P-SOJ-32-1 P-SOJ-32-1 P-TSOPII-32-1 P-TSOPII-32-1 P-TSOPII-32-1 P-TSOPII-32-1 P-TSOPII-32-1 400 mil 400 mil 400 mil 400 mil 400 mil 400 mil 400 mil 400 mil DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) P-SOJ-32-1 P-SOJ-32-1 P-SOJ-32-1 P-TSOPII-32-1 P-TSOPII-32-1 P-TSOPII-32-1 P-TSOPII-32-1 P-TSOPII-32-1 400 mil 400 mil 400 mil 400 mil 400 mil 400 mil 400 mil 400 mil DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 50 ns) DRAM (access time 60 ns)