Large-scale synthesis of copper nanoparticles by chemically controlled reduction for applications of

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Large-area synthesis of high-quality and uniform graphene films on copper foils 原

Large-area synthesis of high-quality and uniform graphene films on copper foils  原

PUBLISHED ON-LINE BY SCIENCE ON MAY 7, 2009 (Science Express article). This is the official publication date for this work.Large-Area Synthesis of High-Quality and Uniform Graphene Films onCopper FoilsXuesong Li a, Weiwei Cai a, Jinho An a, Seyoung Kim b, Junghyo Nah b, Dongxing Yang a, Richard Piner a, Aruna Velamakanni a, Inhwa Jung a, Emanuel Tutuc b, Sanjay K. Banerjee b,Luigi Colombo c*, Rodney S. Ruoff a*a Department of Mechanical Engineering and the Texas Materials Institute, 1 UniversityStation C2200, The University of Texas at Austin, Austin, TX 78712-0292b Department of Electrical and Computer Engineering, Microelectronics Research Center, TheUniversity of Texas at Austin, Austin, Texas 78758, USAc Texas Instruments Incorporated, Dallas, TX 75243*To whom correspondence should be addressed: r.ruoff@, colombo@AbstractGraphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene films of the order of centimeters on copper substrates by chemical vapor deposition using methane. The films are predominantly single layer graphene with a small percentage (less than 5%) of the area having few layers, and are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to help make this growth process self-limiting. We also developed graphene film transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on Si/SiO2 substrates showed electron mobilities as high as 4050 cm2V-1s-1 at room temperature.Graphene, a monolayer of sp2-bonded carbon atoms, is a quasi-two-dimensional (2D) material. Graphene has been attracting great interest because of its distinctive band structure and physical properties (1). Today, the size of graphene films produced is limited to small sizes (usually < 1000 µm2) because the films are produced mostly by exfoliating graphite, which is not a scalable technique. Graphene has also been synthesized by the desorption of Si from SiC single crystal surfaces which yields a multilayered graphene structure that behaveslike graphene (2, 3), and by a surface precipitation process of carbon in some transition metals (4-8).Electronic application will require high-quality large area graphene that can be manipulated to make complex devices and integrated in silicon device flows. Field effect transistors (FETs) fabricated with exfoliated graphite have shown promising electrical properties (9, 10), but these devices will not meet the silicon device scaling requirements, especially those for power reduction and performance. One proposed device that could meet the silicon roadmap requirements beyond the 15 nm node by Banerjee et al. (11) The device is a ‘BisFET’ (bilayer pseudospin FET) device which is made up of two graphene layers separated by a thin dielectric. The ability to create this device can be facilitated by the availability of large-area graphene. Making a transparent electrode, another promising application of graphene, also requires large films (6, 12-14).At this time, there is no pathway for the formation of a graphene layer that can be exfoliated from or transferred from the graphene synthesized on SiC, but there is a way to grow and transfer graphene grown on metal substrates (5-7). Although graphene has been grown on a number of metals, we still have the challenge of growing large-area graphene. For example, graphene grown on Ni seems to be limited by its small grain size, presence of multilayers at the grain boundaries, and the high solubility of carbon (6, 7). We have developed a graphene chemical vapor deposition (CVD) growth process on copper foils (25 µm thick in our experiment). The films grow directly on the surface by a surface catalyzed process and the film is predominantly graphene with <5% of the area having two- and three-layer graphene flakes. Under our processing conditions, the two- and three-layer flakes do not grow larger with time. One of the major benefits of our process is that it can be used to grow graphene on 300 mm copper films on Si substrates (a standard process in Si technology). It is also well known that annealing of Cu can lead to very large grains.As described in (15), we grew graphene on copper foils at temperatures up to 1000 ºC by CVD of carbon using a mixture of methane and hydrogen. Figure 1A shows a scanning electron microscopy (SEM) image of graphene on a copper substrate where the Cu grains are clearly visible. A higher-resolution image of graphene on Cu (Fig. 1B) shows the presence of Cu surface steps, graphene “wrinkles”, and the presence of non-uniform dark flakes. Thewrinkles associated with the thermal expansion coefficient difference between Cu and graphene are also found to cross Cu grain boundaries, indicating that the graphene film is continuous. The inset in Fig.1b shows transmission electron microscopy (TEM) images of graphene and bilayer graphene. With the use of a process similar to that described in ref. (16), the as-grown graphene can be easily transferred to alternative substrates such as SiO2/Si or glass (Figs. 1, C and D), for further evaluation and for various applications; a detailed transfer process is described in the supplemental section. The process and method used to transfer graphene from Cu was the same for the SiO2/Si substrate and the glass substrate. Although it is difficult to see the graphene on the SiO2/Si substrate, a similar graphene film from another Cu substrate transferred on glass clearly shows that it is optically uniform.We used Raman spectroscopy to evaluate the quality and uniformity of graphene on SiO2/Si substrate. Figure 2 shows SEM and optical images with the corresponding Raman spectra and maps of the D, G and 2D bands providing information on the defect density and film thickness. The Raman spectra are from the spots marked with the corresponding colored circles shown in the other panels (in Figs. 2, A and B, green arrows are used instead of circles so as to show the trilayer region more clearly). The thickness and uniformity of the graphene films were evaluated via color contrast under optical microscope (17) and Raman spectra (7, 18, 19). The Raman spectrum from the lightest pink background in Fig. 2B shows typical features of monolayer graphene, e.g., ~0.5 G-to-2D intensity ratio, and a symmetric 2D band centered at ~2680 cm-1 with a full-width of half-maximum (FWHM) of ~33 cm-1. The second lightest pink “flakes” (blue circle) correspond to bilayer graphene and the darkest one (green arrow) represents trilayer graphene. This thickness variation is more clearly shown in the SEM image in Fig. 2A. The D map in Fig. 2D, which has been associated with defects in graphene, is rather uniform and near the background level, except for regions where wrinkles are present and close to few-layer regions. The G and the 2D maps clearly show the presence of more than one layer in the flakes. In the wrinkled regions, there are peak height variations in both the G and 2D bands, and there is a broadening of the 2D band. An analysis of the intensity of the optical image over the whole sample (1 cm by 1 cm) showed that the area with the lightest pink color is more than 95%, and all 40 Raman spectra randomly collected from this area show monolayer graphene. There is only a small fractionof trilayer or few-layer (<10) graphene (<1%) and the rest is bilayer graphene (~ 3-4%).We grew films on Cu as a function of time and Cu foil thickness under isothermal and isobaric conditions. Using the process flow described in (15) we found that graphene growth on Cu is self-limited; growth that proceeded for more than 60 min yielded a similar structure to growth runs performed for ~10 min. For times much less than 10 min, the Cu surface is usually not fully covered [SEM images of graphene on Cu with different growth time are shown in figure S3 (15)]. The growth of graphene on Cu foils of varying thickness (12.5, 25, and 50 µm) also yielded similar graphene structure with regions of double and triple flakes but neither discontinuous monolayer graphene for thinner Cu foils nor continuous multilayer graphene for thicker Cu foils, as we would have expected based on the precipitation mechanism. According to these observations, we concluded that graphene is growing by a surface-catalyzed process rather than a precipitation process as reported by others for Ni (5-7). Monolayer graphene formation caused by surface segregation or surface adsorption of carbon has also been observed on transition metals such as Ni and Co at elevated temperatures by Blakely and coauthors (20-22). However, when the metal substrates were cooled down to room temperature, thick graphite films were obtained because of precipitation of excess C from these metals, in which the solubility of C is relatively high.In recent work, thin Ni films and a fast-cooling process have been used to suppress the amount of precipitated C. However, this process still yields films with a wide range of graphene layer thicknesses, from one to a few tens of layers and with defects associated with fast cooling (5-7). Our results suggest that the graphene growth process is not one of C precipitation but rather a CVD process. The precise mechanism will require additional experiments to understand in full, but very low C solubility in Cu (23-25), and poor C saturation as a result of graphene surface coverage may be playing a role in limiting or preventing the precipitation process altogether at high temperature, similar to the case of impeding of carburization of Ni (26). This provides a pathway for growing self-limited graphene films.To evaluate the electrical quality of the synthesized graphene, we fabricated dual-gated FET with Al2O3 as the gate dielectric and measured them at room temperature. Along with a device model that incorporates a finite density at the Dirac point, the dielectric, and thequantum capacitances (9), the data are shown in Fig. 3. The extracted carrier mobility for this device is ~4050 cm2V-1s-1, with the residual carrier concentration at the Dirac point of n0=3.2×1011cm-2. These data suggest that the films are of reasonable quality, at least sufficient to continue improving the growth process to achieve a material quality equivalent to the exfoliated natural graphite.References1. A. K. Geim, K. S. Novoselov, Nat. Mater.6, 183 (2007).2. C. Berger et al., Science312, 1991 (2006).3. K. V. Emtsev et al., Nat. Mater.8, 203 (2009).4. P. W. Sutter, J.-I. Flege, E. A. Sutter, Nature Materials7, 406 (2008).5. Q. Yu et al., Appl. Phys. Lett.93, 113103 (2008).6. K. S. Kim et al., Nature457, 706 (2009).7. A. Reina et al., Nano Letters9, 30 (2009).8. J. Coraux, A. T. N'Diaye, C. Busse, T. Michely, Nano Letters8, 565 (2008).9. S. Kim et al., Appl. Phys. Lett.94, 062107 (2009).10. M. C. Lemme et al., Solid-State Electronics52, 514 (2008).11. S. K. Banerjee, L. F. Register, E. Tutuc, D. Reddy, A. H. MacDonald, Electron Device Letters, IEEE30, 158 (2009).12. P. Blake et al., Nano Letters8, 1704 (2008).13. R. R. Nair et al., Science320, 1308 (2008).14. X. Wang, L. Zhi, K. Müllen, Nano Letters8, 323 (2008).15. See supporting material on Science on line.16. A. Reina et al., J. Phys. Chem. C112, 17741 (2008).17. Z. H. Ni et al., Nano Letters7, 2758 (2007).18. A. C. Ferrari et al., Phys. Rev. Lett.97, 187401 (2006).19. A. Das et al., Nature Nanotechnology3, 210 (2008).20. M. Eizenberg, J. M. Blakely, Surf. Sci.82, 228 (1979).21. M. Eizenberg, J. M. Blakely, Journal of Chemical Physics71, 3467 (1979).22. J. C. Hamilton, J. M. Blakely, Surf. Sci.91, 199 (1980).23. R. B. McLellan, Scripta Metall.3, 389 (1969).24. G. Mathieu, S. Guiot, J. Carbané, Scripta Metall.7, 421 (1973).25. G. A. López, E. J. Mittemeijer, Scripta Materialia51, 1 (2004).26. R. Kikowatz, K. Flad, G. Horz, J.Vac.Sci.Technol. A5, 1009 (1987).27. We would like to thank the Nanoelectronic Research Initiative (NRI-SWAN; #2006-NE-1464), theDARPA CERA Center, and The University of Texas at Austin for support.Supporting Information Available: Materials and Methods. Fig. S1, S2, and S3.Figure CaptionsFig.1. (A) SEM image of graphene on a copper foil with a growth time of 30 min. (B) High-resolution SEM image showing a Cu grain boundary and steps, two- and three- layer graphene flakes, and graphene wrinkles. Inset in (B) shows TEM images of folded graphene edges. (C and D) Graphene films transferred onto a SiO2/Si substrate and a glass plate, respectively.Fig.2. (A) SEM image of graphene transferred on SiO2/Si (285-nm thick oxide layer) showing wrinkles, and 2 and 3 layer regions. (B) Optical microscope image of the same regions as (A). (C) Raman spectra from the marked spots with corresponding colored circles or arrows showing the presence of graphene, 2 layers of graphene and 3 layers of graphene; (D, E, and F) Raman maps of the D (1300 to 1400 cm-1), G (1560 to 1620 cm-1), and 2D (2660 to 2700 cm-1) bands, respectively (WITec alpha300, λlaser = 532 nm, ~500 nm spot size, 100 objector). Scale bars are 5 µm.Fig.3. (A) Optical microscope image of a graphene FET.(B)Device resistance vs top-gate voltage (V TG) with different back-gate (V BG) biases and vs V TG-V_Dirac,TG (V TG at the Dirac point), with a model fit (solid line).Fig. 1Supporting Online Material for:Large Area Synthesis of High-Quality and Uniform Graphene Films onCopper FoilsXuesong Li a, Weiwei Cai a, Jinho An a, Seyoung Kim b, Junghyo Nah b, Dongxing Yang a, Richard Piner a, Aruna Velamakanni a, Inhwa Jung a, Emanuel Tutuc b, Sanjay K. Banerjee b, Luigi Colombo c*, Rodney S. Ruoff a*a Department of Mechanical Engineering and the Texas Materials Institute, 1 University Station C2200, The University of Texas at Austin, Austin, TX 78712-0292b Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USAc Texas Instruments Incorporated, Dallas, TX 75243*Correspondence to: r.ruoff@, colombo@Materials and MethodsGrowth and transfer of graphene filmsGraphene films were primarily grown on 25-µm thick Cu foils (Alfa Aesar, item No. 13382, cut into 1 cm strips) in a hot wall furnace consisting of a 22-mm ID fused silica tube heated in a split tube furnace; several runs were also done with 12.5- and 50-µm thick Cu foils (also from Aesar). A typical growth process flow is: (1) load the fused silica tube with the Cu foil, evacuate, back fill with hydrogen, heat to 1000 o C and maintain a H2(g) pressure of 40 mTorr under a 2 sccm flow; (2) stabilize the Cu film at the desired temperatures, up to 1000 o C, and introduce 35 sccm of CH4(g) for a desired period of time at a total pressure of 500 mTorr; (3) after exposure to CH4, the furnace was cooled to room temperature. The experimental parameters (temperature profile, gas composition/flow rates, and system pressure) are shown in Fig. S1. The cooling rate was varied from > 300o C/min to about 40o C/min which resulted in films with no discernable differences. Fig. S2 shows the Cu foil with the graphene film, compared to the as-received Cu foil.Graphene films were removed from the Cu foils by etching in an aqueous solution of iron nitrate. The etching time was found to be a function of the etchant concentration, the area, and thickness of the Cu foils. Typically, a 1 cm2 by 25-µm thick Cu foil can be dissolved by a 0.05 g/ml iron nitrate solution over night. Since graphene grows on both sides of the Cu foil, two films are exfoliated during the etching process. We used two methods to transfer the graphene from the Cu foils: (1) after the copper film is dissolved, a substrate is brought into contact with the graphene film and it is ‘pulled’ from the solution; (2) the surface of the graphene-on-Cu is coated with polydimethylsiloxane (PDMS) or poly-methyl methacrylate (PMMA) and after the Cu is dissolved the PDMS-graphene is lifted from the solution, similarto the method reported in the reference metioned in the main text. The first method is simple, but the graphene films break and tear more readily. The graphene films are easily transferred with the second method to other desired substrates such as SiO2/Si, with significantly fewer holes or cracks (< 5% of the film area).FiguresFigure S1. Time dependence of experimental parameters: temperature, pressure, and gas composition/flow rate.Figure S2. Photos of as-received Cu foil, and Cu foil covered with graphene. The Cu foil with graphene has a smooth surface and is “shinier” compared to the as-received Cu foil, which has a thin but rough oxide layer.A BC DFigure S3. SEM images of graphene on Cu with different growth times of (A) 1 min, (B) 2.5 min, (C) 10 min, and (D) 60 min, respectively.Supporting Online MaterialMaterials and MethodsFigs. S1, S2, S3。

二维有序大孔纳米二氧化钛光电子特性研究

二维有序大孔纳米二氧化钛光电子特性研究

二维有序大孔纳米二氧化钛光电子特性研究李葵英;尹华;单青松;林莹莹;朱瑞平【摘要】The two-dimension ordered macroporous nano-TiO2 were prepared through the similar technology applied to the inverse opal, in which templates such as PS, PMMA and SiO2 were used respectively.SPS, X-ray, SEM and EFISPS were used to analyze the microstructure and photoelectric properties of prepared nano-TiO2 particles and thin films. The results show that selecting different template can change the photoelectric threshold of the samples, and a blue shift of surface photovoltaic response related to the main-band-gap charge transfer transition in nano-TiO2 thin film. In addition, the experimental results reveal that La-doping can enhance the stability of the skeleton of the two-dimension ordered macrporous nano-TiO2 .%本文采用反蛋白石制备技术,分别用PS、PMMA、SiO2 为模板剂制备二维有序大孔纳米二氧化钛. 利用X射线衍射谱、扫描电子显微镜、表面光电压谱,以及电场诱导表面光电压谱讨论样品的微结构和光电子特性.结果发现,选择不同的模板剂可以改变上述二氧化钛薄膜材料的光电阈值,并且可以导致与样品主带隙电荷转移跃迁有关的表面光伏响应发生蓝移. 研究结果表明,镧掺杂有利于提高有序大孔纳米二氧化钛骨架的稳定性.【期刊名称】《燕山大学学报》【年(卷),期】2015(039)006【总页数】7页(P490-496)【关键词】纳米二氧化钛;二维有序大孔;光子晶体;反蛋白石法;表面光电压谱【作者】李葵英;尹华;单青松;林莹莹;朱瑞平【作者单位】燕山大学亚稳材料制备技术与科学国家重点实验室,河北秦皇岛066004;燕山大学亚稳材料制备技术与科学国家重点实验室,河北秦皇岛066004;燕山大学亚稳材料制备技术与科学国家重点实验室,河北秦皇岛066004;燕山大学亚稳材料制备技术与科学国家重点实验室,河北秦皇岛066004;燕山大学亚稳材料制备技术与科学国家重点实验室,河北秦皇岛066004【正文语种】中文【中图分类】TB383;O6491987年Yablonovitch E[1]和John S[2]分别首次提出了光子晶体(Photonic Crystals)的概念。

铜离子掺杂二氧化钛光催化板式微反应器

铜离子掺杂二氧化钛光催化板式微反应器

铜离子掺杂二氧化钛光催化板式微反应器林骋;刘明言【摘要】Applying microreactor technology to photocatalytic reactions is a novel and potential technical innovation. Photocatalytic planar microreactors were fabricated by metal etching technology, and copper ion doped TiO2 was immobilized as coatings by the sol-gel method. X-ray diffraction, scanning electron microscope and UV-visible diffuse reflection were used for characterization of photocatalyst. The microreactors were tested for the degradation of methyl orange and the optimal doping concentration of copper ion was found to be 0.04% (mole ratio to Ti). The degradation ratio of methyl orange with an initial concentration of 10 mg·L-1 could reach 45% within 90 s in the microreactor. Degradation ratios of methyl orange in microreactors under controlled irradiation were measured, and the copper ion doped photocatalytic microreactors showed better utilization of irradiation energy. The study of kinetics illustrated that the degradation of methyl orange in the microreactors was a first order reaction of incomplete oxidation with a much greater rate constant (k) comparing to regular reactors. The rate constant increased with the decreasing of initial concentration (C0), and there was a good linear relationship of lnk and lnC0.%将微反应器技术应用于光催化反应是一项新兴且极具潜力的技术创新。

深圳先进院等制备出离子增强型高效黑磷晶体管

深圳先进院等制备出离子增强型高效黑磷晶体管

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作者姓名:卢滇楠

作者姓名:卢滇楠

附件6作者姓名:卢滇楠论文题目:温敏型高分子辅助蛋白质体外折叠的实验和分子模拟研究作者简介:卢滇楠,男,1978年4月出生, 2000年9月师从清华大学化工系生物化工研究所刘铮教授,从事蛋白质体外折叠的分子模拟和实验研究,于2006年1月获博士学位。

博士论文成果以系列论文形式集中发表在相关研究领域的权威刊物上。

截至2007年发表与博士论文相关学术论文21篇,其中第一作者SCI论文9篇(有4篇IF>3),累计他引20次(SCI检索),EI收录论文14篇(含双收),国内专利1项。

中文摘要引言蛋白质体外折叠是重组蛋白质药物生产的关键技术,也是现代生物化工学科的前沿领域之一,大肠杆菌是重要的重组蛋白质宿主体系,截止2005年FDA批准的64种重组蛋白药物中有26种采用大肠杆菌作为宿主体系,目前正在研发中的4000多种蛋白质药物中有90%采用大肠杆菌为宿主表达体系。

但由于大肠杆菌表达系统缺乏后修饰体系使得其生产的目标蛋白质多以无生物学活性的聚集体——包涵体的形式存在,在后续生产过程中需要对其进行溶解,此时蛋白质呈无规伸展链状结构,然后通过调整溶液组成诱导蛋白质发生折叠形成具有预期生物学活性的高级结构,这个过程就称之为蛋白质折叠或者复性,由于该过程是在细胞外进行的,又称之为蛋白质体外折叠技术。

蛋白质体外折叠技术要解决的关键问题是避免蛋白质的错误折叠以及形成蛋白质聚集体。

目前本领域的研究以具体技术和产品折叠工艺居多,折叠过程研究方面则多依赖宏观的结构和性质分析如各类光谱学和生物活性测定等,在研究方法上存在折叠理论、分子模拟与实验研究结合不够的问题,这些都不利于折叠技术的发展和应用。

本研究以发展蛋白质新型体外折叠技术为目标,借鉴蛋白质体内折叠的分子伴侣机制,提出以智能高分子作为人工分子伴侣促进蛋白质折叠的新思路,即通过调控高分子与蛋白质分子的相互作用,1)诱导伸展态的变性蛋白质塌缩形成疏水核心以抑制蛋白质分子间疏水作用所导致的聚集,2)与折叠中间态形成多种可逆解离复合物,丰富蛋白质折叠的途径以提高折叠收率。

定量电子显微学方法与氧化钛纳米结构研究获国家自然科学二等奖

定量电子显微学方法与氧化钛纳米结构研究获国家自然科学二等奖
据 介 绍 , 包 括 美 国 、 H本 、 欧 盟 、俄 罗 斯 在 内的 5 0多 拓 宽 , 释 许 多传 统 理 论 无 法 描 述 的物 质 体 系 , 且 将 理 论 解 并
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CCVD法制备一种特殊形状的炭纤维束

CCVD法制备一种特殊形状的炭纤维束

2019年06月CCVD 法制备一种特殊形状的炭纤维束杨云鹏(沈阳工学院,辽宁抚顺113122)摘要:采用单一催化化学气相沉积法(CCVD )合成了一种特殊形态的炭纤维束。

从表面看,这些炭纤维束是由许多条状的粗纤维构成,放大观察可以发现它们是由卷曲的纳米炭纤维紧密的缠绕在一起形成的,最后采用扫描电镜观察其形貌,对这种特殊形貌的炭纤维束的生长进行了简要的推导。

关键词:炭纤维束;CCVD ;形态近年来,炭纤维束因其潜在的应用前景,如作为场致发射源[1]等而备受关注。

目前,合成炭纤维束的方法很多,但主要的方法有两种:催化化学气相沉积法(CCVD)和等离子体增强化学气相沉积(PECVD)。

CCVD 方法是一种化工技术,该技术主要是利用含有薄膜元素的一种或几种气相化合物或单质在衬底表面上进行化学反应生成薄膜的方法。

化学气相淀积是新发展起来的制备无机材料的新技术,广泛用于提纯物质、研制新晶体、淀积各种单晶、多晶或玻璃态无机薄膜材料,因其具有便于产业化,工艺简单,成本低,收率高等优势,在合成炭纤维束的研究中得到了广泛的应用。

在以往的CCVD 法合成炭纤维束的实验中,炭纤维束和形成束的纤维被设计生长在基底上,所以它们总是笔直平行地生长,从外观到内部结构,形态几乎是相同的[2]。

在本文章中,我们描述了一种利用无基地催化化学气相沉积法制备的特殊形态的炭纤维束。

1实验Ni/Mo/Mg 催化剂完全按照李等人的实验方法制备。

将催化剂和聚丙烯按照5%比例,在175℃的密炼机上进行混合10分钟,取出后迅速团成直径2cm 聚丙烯球。

实验开始后,将聚丙烯球放置在水平的石英管中间,通入氮气和乙炔气混合气体对石英管进行气体清洗,其中气体流量分别控制住100ml/min 和50ml/min 。

15分钟后,将石英管放置到温度控制在600℃的恒温炉中,关闭氮气,乙炔气体以50ml/min 的恒定流量通入密封的石英管中进行反应。

反应持续60分钟后,关闭恒温炉,切断乙炔,通入50ml/min 的氮气至石英管冷却[3]。

化学沉积法制备具有表面增强红外效应的铜纳米粒子

化学沉积法制备具有表面增强红外效应的铜纳米粒子

化学沉积法制备具有表面增强红外效应的铜纳米粒子张小俊;姚杰;牛玉芳【摘要】The copper nanoparticles were prepared on Ge disks by wet-chemical deposition. The influence factors on the morphology of the prepared nanoparticles,such as the type ofsurfactant,concentration,deposition time,were studied. The surface enhanced infrared absorption( SEIRA) effect of the Cu nanoparticles were measured in attenuated total reflection spectroscopy(ATR-FTIR)and transmittance spectroscopy(TR-FTIR)using dimercaptosuccinic acid as the probe. The nanostructure of the copper surface was characterized by scanning electron microscopy ( SEM ) . The results show that copper nanoparticles prepared by adding surfactant triethanolamine,a mean particle size of 100 nm,exhibit strong surface enhanced infrared absorption(SEIRA) effect in ATR but no SEIRA in TR. In contrast with this,the as-deposited Cu nanoparticles(500 nm) adding surfactant polyethylene glycol 400 show less SEIRA in ATR and strong SEIRA in TR. These active Cu nanoparticles can be used in biochemistry analysis. The optimized conditions for preparing copper nanoparticles are as follows:(1)1×10-3 mol/L CuSO4 solution adding 1 mL triethanolamine,depositing on Ge with 8 h for ATR SEIRA material;(2)1×10-3 mol/L CuSO4 solution adding 1 mL polyethylene glycol 400,depositing on Ge with 8 h for TR SEIRA material. Meanwhile the stability of the copper nanoparticles SEIRA has been studied,it showed that the active Cunanoparticles have good stability.%利用化学沉积法在锗基底上制备金属铜纳米粒子,探讨了表面活性剂的种类、浓度、沉积时间等因素对铜纳米粒子形貌的影响。

铜基纳米材料的合成及其表面增强拉曼光谱研究

铜基纳米材料的合成及其表面增强拉曼光谱研究

铜基纳米材料的合成及其表面增强拉曼光谱研究近年来,纳米技术在材料科学领域得到了快速的发展。

纳米材料的特殊性质广泛应用于光电、生物医学、能源等领域。

铜是一种常见的金属元素,具有良好的导电性和导热性,在材料科学领域应用广泛。

本文将介绍铜基纳米材料的合成方法及其表面增强拉曼光谱研究。

一、铜基纳米材料的合成方法铜基纳米材料的合成方法有多种,如物理化学法、化学还原法、电化学法等。

下面介绍一种常用的化学还原法。

首先,将0.1mol/L的铜盐水溶液(如CuSO4)和0.1mol/L的还原剂(如NaOH)混合,得到混合溶液。

然后,在溶液中加入表面活性剂(如CTAB),并加热至60-80℃,使得表面活性剂形成一层膜覆盖在合成的铜基纳米颗粒表面,防止颗粒聚集。

最后,在搅拌过程中加入还原剂(如NaBH4),溶液中的铜离子被还原成为铜颗粒,即成功合成了铜基纳米材料。

二、铜基纳米材料的表面增强拉曼光谱研究拉曼光谱是一种非常有用的工具,可以用于表征材料的分子结构和化学键。

然而,对于一些低浓度的分子,其拉曼信号非常弱,难以检测。

为了解决这个问题,表面增强拉曼光谱技术被广泛应用于纳米材料的研究中。

表面增强拉曼光谱技术是一种改进的拉曼光谱技术,可以有效地增强样品的拉曼信号。

在此方法中,样品表面会吸附一层金属纳米颗粒,这些金属颗粒与激光光束共振,产生电磁场增强效应,导致样品拉曼信号的增强。

在铜基纳米材料的研究中,通过表面增强拉曼光谱技术,可以检测到样品表面的化学键信息,并探究铜基纳米材料的特殊性质和应用价值。

例如,在铜基纳米材料中,铜离子和表面活性剂分子通过化学键相互作用,形成一种交错排列结构,表面增强拉曼光谱可以有效地检测这种结构并分析其化学键。

总之,铜基纳米材料是一种重要的纳米材料,在光电、生物医学、能源等领域应用广泛。

通过化学还原法可成功制备铜基纳米材料,而表面增强拉曼光谱技术可用于对其表面化学结构的研究,为其进一步的应用和开发提供了有力支持。

《2024年多功能微纳米过渡金属羰基CO释放分子(CORMs)复合体系的构建与性能研究》范文

《2024年多功能微纳米过渡金属羰基CO释放分子(CORMs)复合体系的构建与性能研究》范文

《多功能微纳米过渡金属羰基CO释放分子(CORMs)复合体系的构建与性能研究》篇一一、引言随着科技的发展和纳米科技的兴起,对于材料的多功能性及高效性需求愈发显著。

微纳米材料中的多功能过渡金属羰基CO 释放分子(CORMs)因其独特的光学、电子和催化性质在许多领域如医药、环保和能源领域都有重要的应用。

因此,本篇论文着重探讨了多功能微纳米过渡金属羰基CO释放分子(CORMs)复合体系的构建以及其性能研究。

二、CORMs及其复合体系的构建2.1 CORMs的介绍CORMs是一种以过渡金属为基础的有机化合物,它们可以控制地释放CO气体,这使得它们在多个领域具有独特的应用。

其核心结构包括过渡金属原子与CO的键合。

2.2 微纳米过渡金属CORMs的构建微纳米尺寸的CORMs,因其更小的尺寸和更大的比表面积,使得它们在反应中具有更高的活性和效率。

我们通过特定的合成方法,成功构建了微纳米过渡金属CORMs。

2.3 复合体系的构建为了进一步增强CORMs的性能,我们通过与其他材料进行复合,构建了多功能微纳米过渡金属CORMs复合体系。

这些复合体系不仅可以增强CORMs的稳定性,同时也能提升其反应活性和选择性。

三、性能研究3.1 光学性能研究通过紫外-可见光谱分析,我们发现微纳米CORMs在特定波长下具有明显的吸收峰,这表明它们具有独特的光学性质。

同时,复合体系的光学性能也得到了显著提升。

3.2 电子性能研究利用电子显微镜和电子能谱分析,我们发现微纳米CORMs 具有较高的电子传输效率。

同时,复合体系中的电子传输速度也得到了显著提升。

3.3 催化性能研究我们通过一系列的催化实验发现,微纳米CORMs复合体系在多种反应中表现出良好的催化活性。

特别是在某些有机合成反应中,其催化效率远高于传统的催化剂。

四、结论本论文研究了多功能微纳米过渡金属羰基CO释放分子(CORMs)复合体系的构建与性能。

通过实验和理论分析,我们发现这种复合体系在光学、电子和催化性能上均表现出良好的表现。

展现出明亮发射的多金属氧酸盐化合物及其制备方法[发明专利]

展现出明亮发射的多金属氧酸盐化合物及其制备方法[发明专利]

专利名称:展现出明亮发射的多金属氧酸盐化合物及其制备方法
专利类型:发明专利
发明人:史蒂文·丹尼尔斯,奈杰尔·L·皮克特,尼基·普拉布达斯·萨佛珍妮,弗吉尔·加夫里柳克
申请号:CN201980052291.X
申请日:20190812
公开号:CN112533934A
公开日:
20210319
专利内容由知识产权出版社提供
摘要:用于合成多金属氧酸盐化合物的方法包括在有机盐的存在下加热金属前体。

本文中制备的多金属氧酸盐化合物展现出高光致发光量子效率和在电磁波谱的蓝色和/或紫色区域中的光致发光最大值。

申请人:纳米2D材料有限公司,曼彻斯特大学
地址:英国曼彻斯特
国籍:GB
代理机构:中科专利商标代理有限责任公司
代理人:吴胜周
更多信息请下载全文后查看。

卢柯 Revealing the Maximum Strength in Nanotwinned Copper

卢柯 Revealing the Maximum Strength in Nanotwinned Copper

29.F.F.Balakirev et al.,Phys.Rev.Lett.102,017004(2009).30.F.Rullier-Albenque et al.,Phys.Rev.Lett.99,027003(2007).31.T.Senthil,Phys.Rev.B78,035103(2008).32.A.Kanigel et al.,Nat.Phys.2,447(2006).33.J.W.Loram,K.A.Mirza,J.R.Cooper,J.L.Tallon,J.Phys.Chem.Solids59,2091(1998).34.T.Yoshida et al.,J.Phys.Condens.Matter19,125209(2007).35.J.Zaanen,Nature430,512(2004).36.J.W.Loram,J.Luo,J.R.Cooper,W.Y.Liang,J.L.Tallon,J.Phys.Chem.Solids62,59(2001).37.C.Panagopoulos et al.,Phys.Rev.B67,220502(2003).38.H.J.A.Molegraaf,C.Presura,D.van der Marel,P.H.Kes,M.Li,Science295,2239(2002).39.S.Chakraborty,D.Galanakis,P.Phillips,/abs/0807.2854(2008).40.P.Phillips,C.Chamon,Phys.Rev.Lett.95,107002(2005).41.We acknowledge technical and scientific assistance fromS.L.Kearns,J.Levallois,and N.Mangkorntang andcollaborative support from H.H.Wen.This work wassupported by Engineering and Physical Sciences ResearchCouncil(UK),the Royal Society,Laboratoire National desChamps Magnétiques Pulsés,the French AgenceNationale de la Recherche IceNET,and EuroMagNET.Supporting Online Material/cgi/content/full/1165015/DC1Materials and MethodsFigs.S1and S2References22August2008;accepted21November2008Published online11December2008;10.1126/science.1165015Include this information when citing this paper.Revealing the Maximum Strengthin Nanotwinned CopperL.Lu,1*X.Chen,1X.Huang,2K.Lu1The strength of polycrystalline materials increases with decreasing grain size.Below a critical size,smaller grains might lead to softening,as suggested by atomistic simulations.The strongest size should arise at a transition in deformation mechanism from lattice dislocation activities to grain boundary–related processes.We investigated the maximum strength of nanotwinned copper samples with different twin thicknesses.We found that the strength increases with decreasing twin thickness,reaching a maximum at 15nanometers,followed by a softening at smaller values that is accompanied by enhanced strain hardening and tensile ductility.The strongest twin thickness originates from a transition in the yielding mechanism from the slip transfer across twin boundaries to the activity of preexisting easy dislocation sources.T he strength of polycrystalline materials increases with decreasing grain size,asdescribed by the well-known Hall-Petch relation(1,2).The strengthening originates from the fact that grain boundaries block the lattice dislocation motion,thereby making plastic defor-mation more difficult at smaller grain sizes.How-ever,below a certain critical size,the dominating deformation mechanism may change from lattice dislocation activities to other mechanisms such as grain boundary–related processes,and softening behavior(rather than strengthening)is expected (3,4).Such a softening phenomenon has been demonstrated by atomistic simulations,and a crit-ical grain size of maximum strength has been predicted(5–7).In pure metals,an impediment to determining the grain size that yields the highest strength is the practical difficulty of obtaining sta-ble nanostructures with extremely small structural domains(on the order of several nanometers).The driving force for growth of nanosized grains in pure metals,originating from the high excess en-ergy of numerous grain boundaries,becomes so large that grain growth may take place easily even at ambient temperature or below.Coherent twin boundaries(TBs),which aredefined in a face-centered cubic structure as the(111)mirror planes at which the normal stackingsequence of(111)planes is reversed,are known tobe as effective as conventional grain boundariesin strengthening materials.Strengthening has beenobtained in Cu when high densities of nanometer-thick twins are introduced into submicrometer-sized grains(8–10).In addition,coherent TBs aremuch more stable against migration(a fundamen-tal process of coarsening)than conventional grainboundaries,as the excess energy of coherent TBs isone order of magnitude lower than that of grainboundaries.Hence,nanotwinned structures areenergetically more stable than nanograined coun-terparts with the same chemical composition.Thestable nanotwinned structure may provide samplesfor exploring the softening behavior with very smalldomain sizes.Here,we prepared nanotwinned pureCu(nt-Cu)samples with average twin thicknessranging from a few nanometers to about100nm.High-purity(99.995%)Cu foil samples com-posed of nanoscale twin lamellae embedded insubmicrometer-sized grains were synthesized bymeans of pulsed electrodeposition.By increasingthe deposition rate to10nm/s,we succeeded inrefining the mean twin thickness(i.e.,the meanspacing between adjacent TBs,hereafter referredto as l)from a range of15to100nm down to arange of4to10nm(see supporting online ma-terial).The as-deposited Cu foils have an in-planedimension of20mm by10mm and a thicknessof30m m with a uniform microstructure.Shownin Fig.1,A to C,are transmission electron mi-croscopy(TEM)plane-view images of three as-deposited samples with l values of96nm,15nm,and4nm,respectively.The TEM images indicatethat some grains are irregular in shape,but low-magnification scanning electronic microscopyimages,both cross section and plane view,showthat the grains are roughly equiaxed in three di-mensions.Grain size measurements showed asimilar distribution and a similar average diam-eter of about400to600nm for all nt-Cu samples.Twins were formed in all grains(see the electrondiffraction pattern in Fig.1D),and observationsof twins in a large number of individual grainsrevealed no obvious change in the twin densityfrom grain to grain.Note that in all samples,theedge-on twins that formed in different grains arealigned randomly around the foil normal(growth)direction(8,11),in agreement with a strong[110]texture determined by x-ray diffraction(XRD).Foreach sample,twin thicknesses were measured froma large number of grains,which were detected fromnumerous TEM and high-resolution TEM(HRTEM)images,to generate a distribution.Figure1E illus-trates the492measurements for the sample withthe finest twins;the majority yielded spacings be-tween twins smaller than10nm,with a mean of4nm.For simplicity,each nt-Cu sample is iden-tified by its mean twin thickness;for example,thesample with l=4nm is referred to as nt-4.Figure2shows the uniaxial tensile true stress–true strain curves for nt-Cu samples of various lvalues.Also included are two stress-strain curvesobtained from a coarse-grained Cu(cg-Cu)andan ultrafine-grained Cu(ufg-Cu)that has a sim-ilar grain size to that of nt-Cu samples but is freeof twins within grains.Two distinct features areobserved with respect to the l dependence of themechanical behavior of nt-Cu.The first is the oc-currence of the l giving the highest strength.Allstress-strain curves of nt-Cu samples in Fig.2,Aand B,are above that of the ufg-Cu,indicating astrengthening by introducing twins into the sub-micrometer grains.However,such a strengthen-ing does not show a linear relationship with l.Forl>15nm(Fig.2A),the stress-strain curves shiftupward with decreasing l,similar to the strength-ening behavior reported previously in the nt-Cu(9,11)and nanocrystalline Cu(nc-Cu)(12–15)samples(Fig.3A).However,with further de-1Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,P.R.China.2Center for Fundamental Research:Metal Structures in Four Dimensions,Materials Research Department, RisøNational Laboratory for Sustainable Energy,Technical Uni-versity of Denmark,DK-4000Roskilde,Denmark.*To whom correspondence should be addressed.E-mail: llu@ o n J a n u a r y 3 0 , 2 0 0 9 w w w . s c i e n c e m a g . o r g D o w n l o a d e d f r o mcreases of l down to extreme dimensions (i.e.,less than 10nm),the stress-strain curves shift down-ward (Fig.2B).As plotted in Fig.3A,the mea-sured yield strength s y (at 0.2%offset)shows a maximum value of 900MPa at l ≈15nm.The second feature is a substantial increase in tensile ductility and strain hardening when l <15nm.As seen in Fig.2,the tensile elongation of the nt-Cu samples increases monotonically with decreasing l .When l <15nm,the uniform ten-sile elongation exceeds that of the ufg-Cu sample,reaching a maximum value of 30%at the finest twin thickness.Strain-hardening coefficient (n )values were determined for each sample by fitting the uniform plastic deformation region to s =K 1+K 2e n ,where K 1represents the initial yield stress and K 2is the strengthening coefficient (i.e.,the strength increment due to strain hardening at strain e =1)(16,17).The n values determined for all the nt-Cu samples increase monotonically with de-creasing l (Fig.3B),similar to the trend of uniform elongation versus l .When l <15nm,n exceeds the value for cg-Cu (0.35)(16,17)and finally reaches a maximum of 0.66at l =4nm.The twin refinement –induced increase in n is opposite to the general observation in ultrafine-grained and nanocrystalline materials,where n continuously decreases with decreasing grain size (Fig.3B).The strength of the nt-Cu samples has been considered to be controlled predominantly by the nanoscale twins via the mechanism of slip trans-fer across the TBs (10,18),and it increases with decreasing l in a Hall-Petch –type relationship (9)similar to that of grain boundary strength-ening in nanocrystalline metals (12).Our re-sults show that such a relationship breaks down when l <15nm,although other structural pa-rameters such as grain size and texture are un-changed.The grain sizes of the nt-Cu samples are in the submicrometer regime,which is too large for grain boundary sliding to occur at room temperature,as expected for nanocrystalline ma-terials with grain sizes below 20nm (3).There-fore,the observed softening cannot be explained by the initiation of grain boundary –mediated mechanisms such as grain boundary sliding and grain rotation,as proposed by molecular dynam-ics (MD)simulations for nanocrystalline mate-rials (3).To explore the origin of the twin thickness giv-ing the highest strength,we carried out detailed structural characterization of the as-deposited sam-ples.HRTEM observations showed that in each sample TBs are coherent S 3interfaces associated with the presence of Shockley partial dislocations (as steps),as indicated in Fig.1D.These partial dislocations have their Burgers vector parallel to the twin plane and are an intrinsic structural fea-ture of twin growth during electrodeposition.The distribution of the preexisting partial dislocations is inhomogeneous,but their density per unit area of TBs is found to be rather constant among sam-ples with different twin densities.This suggests that the deposition parameters and the twin re-finement have a negligible effect on the nature ofTBs.Therefore,as a consequence of decreasing l ,the density of such TB-associated partial dislocations per unit volume increases.We also noticed that grain boundaries in the nt-Cu samples with l ≤15nm are characterized by straight segments (facets)that areoftenTrue strain (%)T r u e s t r e s s (M P a )True strain (%)Fig.2.Uniaxial tensile true stress –true strain curves for nt-Cu samples tested at a strain rate of 6×10−3s −1.(A )Curves for samples with mean twin thickness varying from 15to 96nm;(B )curves for samples with mean twin thickness varying from 4to 15nm.For comparison,curves for a twin-free ufg-Cu with a mean grain size of 500nm and for a cg-Cu with a mean grain size of 10m m areincluded.C200 nmA BbbDFig.1.TEM images of as-deposited Cu samples with 15nm.(C )l =4nm.(D )The same sample as (C)but at higher resolution,with a corresponding electron diffraction pattern (upper right inset)and a HRTEM image of the outlined area showing the presence of Shockley partials at the TB (lower right inset).(E )Distribution of the lamellar twin thicknesses determined from TEM and HRTEM images for l =4nm.REPORTSo n J a n u a r y 30, 2009w w w .s c i e n c e m a g .o r g D o w n l o a d e d f r o massociated with dislocation arrays (19),whereas in samples with coarser twins,grain boundaries are smoothly curved,similar to conventional grain boundaries.The microstrain measured by XRD was a negligible 0.01%for samples with l ≥15nm,but increased gradually from 0.038%to 0.057%when l decreased from 10to 4nm,which also indicates a gradual increase in the de-fect density.Recent experimental studies and MD simula-tions (3,20,21)have shown that an increase in the density of preexisting dislocations in nano-scale materials will cause softening.In the nt-Cu samples studied,both the dislocation arrays asso-ciated with the grain boundaries and the steps associated with the preexisting partial dislocations along TBs could be potential dislocation sources,which are expected to affect the initiation of plas-tic deformation (22)and to provide the disloca-tions required for the dislocation-TB interactions that cause work hardening.The preexisting par-tial dislocations can act as readily mobile dislo-cations,and their motion may contribute to the plastic yielding when an external stress is applied to the sample.The plastic strains induced by the motion of preexisting partial dislocations can be estimated as e =r 0b s d/M (where r 0is the initial dislocation density,b s is the Burgers vector of Shockley partial dislocation,d is the grain size,and M is the Taylor factor).Calculations showed that for the samples with l >15nm,the preexist-ing dislocations induce a negligibly small plastic strain (<0.05%).However,for the nt-4specimen,a remarkable amount of plastic strain,as high as 0.1to 0.2%,can be induced just by the motions of high-density preexisting dislocations at TBs (roughly 1014m −2),which could control the mac-roscopic yielding of the sample.The above anal-ysis suggests that for extremely small values of l ,a transition in the yielding mechanism can result in an unusual softening phenomenon in which the preexisting easy dislocation sources at TBs andgrain boundaries dominate the plastic deforma-tion instead of the slip transfer across TBs.Shockley partial dislocations are always in-volved in growth of twins during crystal growth,thermal annealing,or plastic deformation.Shock-ley partials might be left at TBs when the twin growth is interrupted.Therefore,the presence of Shockley partials at some TBs is a natural phe-nomenon.Although these preexisting dislocations may have a small effect on the mechanical be-havior of the samples with thick twins,the effect will be much more pronounced in the samples with nanoscale twins and/or with high preexist-ing TB dislocation densities such as those seen in deformation twins (23).To understand the extraordinary strain hard-ening,we analyzed the deformation structures of the tensile-deformed samples.In samples with coarse twins,tangles and networks of perfect dis-locations were observed within the lattice between the TBs (Fig.4A),and the dislocation density was estimated to be on the order of 1014to 1015m −2.In contrast,high densities of stacking faults and Shockley partials associated with the TBs were found to characterize the deformed structure of the nt-4sample (Fig.4,B and C),indicating the interactions between dislocations and TBs.Recent MD simulations (18,24,25)showed that when an extended dislocation (two Shockley partials connected by a stacking fault ribbon)is forced by an external stress into a coherent TB,it recom-bines or constricts into a perfect dislocation con-figuration at the coherent TB and then slips through the boundary by splitting into three Shockley par-tials.Two of them glide in the slip plane of the adjacent twin lamella,constituting a new extended dislocation,whereas the third one,a twinning par-tial,glides along the TB and forms a step.It is expected that with increasing strain,such an in-teraction process will generate a high density of partial dislocations (steps)along TBs and stack-ing faults that align with the slip planes in the twin lamellae,which may (or may not)connect to the TBs.Such a configuration of defects was observed,as shown in Fig.4C.The density of partial dislocations in the deformed nt-4sampleFig.3.Variation of (A )yield strength and (B )strain hardening coef-ficient n as a function of mean twin thickness for the nt-Cu samples.For comparison,the yield strength and n values fornc-Cu [▲(12),◀(13),▶(14),and ◆(15)],ufg-Cu[▾(9)],andcg-Cu samples reported in the literature are included.A maximum in the yieldstress is seen for thent-Cu with l =15nm,but this has not beenobserved for the nc-Cu,even when the grain size is as small as 10nm.0.00.20.40.60.8nor d (nm)0200400600800σy (M P a )λ or d (nm)020406080100120110100100010000λ2 nmTTB200 nmA CFig.4.(A )A typical bright TEM image of the deformed nt-96sample showing the tangling of lattice dislocations.(B )An HRTEM image of the nt-4sample tensile-deformed to a plastic strain of 30%,showing a high density of stacking faults (SF)at the TB.(C )The arrangement of Shockley partials and stacking faults at TBs within the lamellae in the nt-4sample.Triangles,Shockley partial dislocations associated with stacking faults;⊥,partials with their Burgers vector parallel to the TB plane.REPORTSo n J a n u a r y 30, 2009w w w .s c i e n c e m a g .o r g D o w n l o a d e d f r o mwas estimated to be 5×1016m −2on the basis of the spacing between the neighboring partials and l .This is two orders of magnitude higher than that of the preexisting dislocations and the lattice dislocations stored in the coarse twins.Such a finding suggests that decreasing the twin thick-ness facilitates the dislocation-TB interactions and affords more room for storage of dislocations,which sustain more pronounced strain hardening in the nt-Cu (26,27).These observations suggest that the strain-hardening behavior of nt-Cu samples is governed by two competing processes:dislocation-dislocation interaction hardening in coarse twins,and dislocation-TB interaction hardening in fine twins.With a refining of l ,the contribution from the latter mech-anism increases and eventually dominates the strain hardening,as revealed by the continuous increase of n values (Fig.3B).However,the former hard-ening mechanism usually leads to an inverse trend,diminishing with size refinement (17).Twins are not uncommon in nature,and they appear in various metals and alloys with different crystallographic structures.Extremely thin twin lamellae structures can possibly be achieved under proper conditions during crystal growth,plastic deformation,phase transformations,or thermal annealing of deformed structures.Our finding of the twin thickness giving maximum strength il-lustrates that the scale-dependent nature of plastic deformation of nanometer-scale materials is not necessarily related to grain boundary –mediated processes.This finding also provides insight into the development of advanced nanostructured materials.References and Notes1.E.O.Hall,Proc.Phys.Soc.London Ser.B 64,747(1951).2.N.J.Petch,J.Iron Steel Inst.174,25(1953).3.J.Schiøtz,K.W.Jacobsen,Science 301,1357(2003).4.S.Yip,Nature 391,532(1998).5.M.A.Meyers,A.Mishra,D.J.Benson,Prog.Mater.Sci.51,427(2006).6.P.G.Sanders,J.A.Eastman,J.R.Weertman,Acta Mater.45,4019(1997).7.C.C.Koch,K.M.Youssef,R.O.Scattergood,K.L.Murty,Adv.Eng.Mater.7,787(2005).8.L.Lu et al .,Acta Mater.53,2169(2005).9.Y.F.Shen,L.Lu,Q.H.Lu,Z.H.Jin,K.Lu,Scr.Mater.52,989(2005).10.X.Zhang et al .,Acta Mater.52,995(2004).11.L.Lu,Y.Shen,X.Chen,L.Qian,K.Lu,Science 304,422(2004);published online 18March 2004(10.1126/science.1092905).12.J.Chen,L.Lu,K.Lu,Scr.Mater.54,1913(2006).13.S.Cheng et al .,Acta Mater.53,1521(2005).14.Y.Champion et al .,Science 300,310(2003).15.Y.M.Wang et al .,Scr.Mater.48,1851(2003).16.A.Misra,X.Zhang,D.Hammon,R.G.Hoagland,Acta Mater.53,221(2005).17.M.A.Meyers,K.K.Chawla,in Mechanical Behavior of Materials ,M.Horton,Ed.(Prentice Hall,Upper Saddle River,NJ,1999),pp.112–135.18.Z.H.Jin et al .,Scr.Mater.54,1163(2006).19.X.H.Chen,L.Lu,K.Lu,J.Appl.Phys.102,083708(2007).20.X.Huang,N.Hansen,N.Tsuji,Science 312,249(2006).21.Z.W.Shan,R.K.Mishra,S.A.Syed Asif,O.L.Warren,A.M.Minor,Nat.Mater.7,115(2008).22.K.Konopka,J.Mizera,J.W.Wyrzykowski,J.Mater.Process.Technol.99,255(2000).23.Y.S.Li,N.R.Tao,K.Lu,Acta Mater.56,230(2008).24.S.I.Rao,P.M.Hazzledine,Philos.Mag.A 80,2011(2000).25.Z.H.Jin et al .,Acta Mater.56,1126(2008).26.M.Dao,L.Lu,Y.Shen,S.Suresh,Acta Mater.54,5421(2006).27.T.Zhu,J.Li,A.Samanta,H.G.Kim,S.Suresh,Proc.Natl.Acad.Sci.U.S.A.104,3031(2007).28.Supported by National Natural Science Foundation ofChina grants 50431010,50621091,50725103,and 50890171,Ministry of Science and Technology of China grant 2005CB623604,and the Danish National Research Foundation through the Center for FundamentalResearch:Metal Structures in Four Dimensions (X.H.).We thank N.Hansen,Z.Jin,W.Pantleon,and B.Ralph for stimulating discussions,X.Si and H.Ma for sample preparation,S.Zheng for TEM observations,and Y.Shen for conducting some of the tensile tests.Supporting Online Material/cgi/content/full/323/5914/607/DC1Materials and Methods Table S1References24October 2008;accepted 30December 200810.1126/science.1167641Control of Graphene ’s Properties by Reversible Hydrogenation:Evidence for GraphaneD.C.Elias,1*R.R.Nair,1*T.M.G.Mohiuddin,1S.V.Morozov,2P.Blake,3M.P.Halsall,1A.C.Ferrari,4D.W.Boukhvalov,5M.I.Katsnelson,5A.K.Geim,1,3K.S.Novoselov 1†Although graphite is known as one of the most chemically inert materials,we have found that graphene,a single atomic plane of graphite,can react with atomic hydrogen,which transforms this highly conductive zero-overlap semimetal into an insulator.Transmission electron microscopy reveals that the obtained graphene derivative (graphane)is crystalline and retains the hexagonal lattice,but its period becomes markedly shorter than that of graphene.The reaction with hydrogen is reversible,so that the original metallic state,the lattice spacing,and even the quantum Hall effect can be restored by annealing.Our work illustrates the concept of graphene as a robust atomic-scale scaffold on the basis of which new two-dimensional crystals with designed electronic and other properties can be created by attaching other atoms and molecules.Graphene,a flat monolayer of carbon atoms tightly packed into a honeycomb lattice,continues to attract immense interest,most-ly because of its unusual electronic properties and effects that arise from its truly atomic thick-ness (1).Chemical modification of graphene has been less explored,even though research on car-bon nanotubes suggests that graphene can be al-tered chemically without breaking its resilient C-C bonds.For example,graphene oxide is graphene densely covered with hydroxyl and other groups (2–6).Unfortunately,graphene oxide is strongly disordered,poorly conductive,and difficult to reduce to the original state (6).However,one can imagine atoms or molecules being attached to the atomic scaffold in a strictly periodic manner,which should result in a different electronic struc-ture and,essentially,a different crystalline mate-rial.Particularly elegant is the idea of attaching atomic hydrogen to each site of the graphene lattice to create graphane (7),which changes the hybridization of carbon atoms from sp 2into sp 3,thus removing the conducting p -bands and open-ing an energy gap (7,8).Previously,absorption of hydrogen on gra-phitic surfaces was investigated mostly in con-junction with hydrogen storage,with the research focused on physisorbed molecular hydrogen (9–11).More recently,atomic hydrogen chem-isorbed on carbon nanotubes has been studied theoretically (12)as well as by a variety of exper-imental techniques including infrared (13),ultra-violet (14,15),and x-ray (16)spectroscopy and scanning tunneling microscopy (17).We report the reversible hydrogenation of single-layer graphene and observed dramatic changes in its transport properties and in its electronic and atomic struc-ture,as evidenced by Raman spectroscopy and transmission electron microscopy (TEM).Graphene crystals were prepared by use of micromechanical cleavage (18)of graphite on top of an oxidized Si substrate (300nm SiO 2)and then identified by their optical contrast (1,18)and distinctive Raman signatures (19).Three types of samples were used:large (>20m m)crystals for Raman studies,the standard Hall bar de-vices 1m m in width (18),and free-standing mem-branes (20,21)for TEM.For details of sample fabrication,we refer to earlier work (18,20,21).1School of Physics and Astronomy,University of Manchester,M139PL,Manchester,UK.2Institute for Microelectronics Tech-nology,142432Chernogolovka,Russia.3Manchester Centre for Mesoscience and Nanotechnology,University of Manches-ter,M139PL,Manchester,UK.4Department of Engineering,Cambridge University,9JJ Thomson Avenue,Cambridge CB3OFA,UK.5Institute for Molecules and Materials,Radboud University Nijmegen,6525ED Nijmegen,Netherlands.*These authors contributed equally to this work.†To whom correspondence should be addressed.E-mail:Kostya@REPORTSo n J a n u a r y 30, 2009w w w .s c i e n c e m a g .o r g D o w n l o a d e d f r o m。

结晶器铜合金表面激光原位制备纳米颗粒增强钴基梯度涂层_陈岁元

结晶器铜合金表面激光原位制备纳米颗粒增强钴基梯度涂层_陈岁元

第38卷 第7期中 国 激 光Vo l.38,N o.72011年7月CHINESE JOURNAL O F LASERSJuly,2011结晶器铜合金表面激光原位制备纳米颗粒增强钴基梯度涂层陈岁元 董 江 陈 军 梁 京 刘常升(东北大学材料各向异性与织构工程教育部重点实验室,辽宁沈阳110004)摘要 在Co 基熔覆涂层材料成分与结构设计的基础上,利用脉冲激光诱导原位反应技术,在结晶器Cu 合金基体材料上制备陶瓷相增强Co 基梯度涂层。

利用分析技术对制备涂层的组织结构、成分、性能和涂层形成机理进行了系统研究。

结果表明,设计成分的梯度变化成功制备出具有3层梯度的Co 基合金涂层,实现了涂层组织与性能的梯度变化。

梯度涂层里没有裂纹和气孔缺陷,涂层与Cu 合金基体形成冶金界面结合。

激光诱导原位生成了纳米级Cr -N-i Fe -C,M o N i 4,Cr 7C 2,WC 1-x 等颗粒,起到了增强Co 基合金梯度涂层的作用。

梯度涂层各层的陶瓷颗粒数量呈现由第1层到第3层逐渐增多的趋势,硬度由铜合金基体的94H V 逐渐增加到最外层涂层的523H V 。

涂层中石墨具有改善梯度涂层摩擦性能的作用。

关键词 激光技术;结晶器铜合金;激光诱导原位制备;Co 基合金梯度涂层;纳米陶瓷颗粒增强中图分类号 T G 113.1;T N 249 文献标识码 A doi:10.3788/CJL 201138.0703006Nano -Particle s Reinforced Co -Base d Gradient Coating with HighWe ar -Re sistance Prepare d in -situ by Lase r on Surface ofCrystallize r Coppe r AlloyChen Suiyuan Dong Jiang Chen Jun Liang Jing Liu Changsheng(Key La bor a tor y f or Anisotr opy an d T ex tu r e of M at er ia ls ,Min ist r y of Edu ca tion ,Nor t hea st er n Un iver sity ,S hen ya ng ,L iaon ing 110004,Chin a )Ab stract Based on the compositiona l and struc t ura l designing of Co -based cladding materials,a nano -particle reinforc ed Co -based a lloy gradient coating is produced by laser -inducing in -sit u technique on the crysrallizer Cu alloy.The microstruc t ure,hardness,ant-i wear propert y and m ec hanism of the gradient c oating a re studied using analysistechniques.The results show that the gradient c oating is c om posed of three layers,which are the surface,inside structure and a metallurgical bond between the gradient coating and Cu alloy substrate.Nano -particles of Cr -N-i Fe -C,MoNi 4,Cr 7C 2,and WC 1-x synthesized in -situ play role as a reinforced Co -base gradient c oating.The number of the ceram ic particles increases from the first layer to the third layer.The micro -hardness of the gradient c oating increases gradually from 94HV of the substrate to 523HV of the outmost layer.The graphite has function of improving fric tional property of the gradient coating.Key words laser technique;c rystallizer Cu alloy;laser induced in -situ reaction;Co -ba sed alloy gradient coating;nano -c eramic pa rtic le reinforc edOCIS codes 160.3900;140.3450;310.1515;160.4330收稿日期:2011-02-14;收到修改稿日期:2011-03-23基金项目:国家自然科学基金(50574020)、教育部创新团队发展计划项目(IRT 0713)和辽宁省科技计划攻关重点项目(2009221003)资助课题。

花状软锰矿的超声合成及其对亚甲基蓝的脱色性能

花状软锰矿的超声合成及其对亚甲基蓝的脱色性能

花状软锰矿的超声合成及其对亚甲基蓝的脱色性能杨爱丽;魏秉庆;张政军【摘要】Flower-like manganese wads (MWs) was synthesized via a simple and inexpensive ultrasonic method for the first time. The structure and morphology of MWs were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS). The decolorization efficiencies of MWs for azo dye methylene blue (MB) were examined as a function of solution pH, stirring time, MWs dosage, and initial MB concentration. Results showed that MWs had higher decolorization efficiency (the maximum decolorization rate of nearly 100%in 90min) than other catalysts, such as Mn3O4/H2O2 (the maximum decolorization rate of 99.7%in 3h), ZnS/CdS (the maximum decolorization rate of 73% in 6h under light irradiation), and sulfate modified titania (the maximum decolorization rate of nearly 100%in 4h under solar radiation). Most importantly, MWs alone can effectively remove MB from the solution without using H2O2or other special devises such as UV light and ultrasonic equipment.%首次通过操作简便成本低廉的超声方法合成花状软锰矿(MWs).采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)以及能量散布分析仪(EDS)等测试手段对其结构和形貌进行表征.研究了MWs对偶氮染料亚甲基蓝(MB)的脱色性能,考察pH值、反应时间、MWs投加量以及MB初始浓度等影响因子对脱色效果影响.结果表明,MWs对MB具有优良的脱色性能,90min达到近100%的脱色率,无需使用H2O2或者UV灯和超声等其它辅助设备,这明显优于其他催化剂,如Mn3O4/H2O2需3h达到99.7%最大脱色率、ZnS/CdS在光照下需6h最大脱色率仅为73%、硫改性的TiO2光照下需4h才能达到近100%的脱色率.【期刊名称】《中国环境科学》【年(卷),期】2014(000)006【总页数】7页(P1435-1441)【关键词】软锰矿(MWs);超声合成;表征;亚甲基蓝(MB);脱色【作者】杨爱丽;魏秉庆;张政军【作者单位】清华大学材料科学与工程学院,北京 100084;特拉华大学机械工程学院,美国19716;清华大学材料科学与工程学院,北京 100084【正文语种】中文【中图分类】X703工业染料废水中的有机染料大多具有复杂的芳香环结构,化学稳定性好且不易降解.水体中残余染料的毒性可能导致水生态系统的破坏,对动物和人类健康亦具有一定危害性.因此,废水中染料污染物的去除已成为环境修复领域的研究热点之一[1-2]. 目前,对于废水中染料的去除多采用 H2O2或H2O2/锰氧化物作为活性氧化剂[3-4].不过,H2O2的化学稳定性较差,室温下分解速度较快,20min内便完全分解,使其对于水中有害物质的降解作用受到限制[1,5].为了克服这一缺陷,化学稳定性较好的高级氧化技术相继被开发,如氧化[6]、超声辐照[7]、臭氧[8]以及紫外可见光光照[9-10]等催化技术.催化氧化技术作为一种有效而经济的废水净化处理技术受到广泛关注[11-12].不过,该技术通常需要 UV灯、超声等专门操作设备,这便增加了处理成本和能耗,处理过程也相对复杂化.锰氧化物具有来源丰富、价格低廉、无毒和稳定性好等诸多优良品质,在电化学、催化、吸附和环境修复等领域受到广泛关注[13-14].不过,锰氧化物的合成方法存在成本高、耗时长等缺点[15-16].软锰矿为MnO和MnO2的多价态杂相体,更利于界面电子传输,提高催化反应活性[17],从而能更有效地去除废水中的有害污染物[18].目前有关软锰矿制备的文献报道极少.本文通过简单低廉的超声辐照方法合成花状软锰矿(MWs),采用超声法合成这种含多价态锰且呈现片层堆积球形花状聚集态形貌的锰氧化物的方法国内外尚未见报道.文章研究了MWs对MB的脱色性能(无需使用UV或者超声等专门辅助设备),实验考察了 pH、反应时间、MWs投加量以及MB初始浓度对脱色效果影响,对脱色降解机制进行初步探讨.1 实验部分1.1 试剂与仪器KMnO4(Aldrich Chemicals)、浓 HCl(Fisher Scientific)、无水乙醇(Decon Labs. Inc.)、KOH(Fisher Scientific)均为分析纯化学试剂.选取偶氮染料亚甲基蓝(MB, Aldrich Chemicals)作为脱色实验的模拟染料.实验过程全部使用去离子水(DW). 超声仪(Branson 2510,美国);X 射线衍射仪(西门子,德国);扫描电子显微镜(JSM-7400F,日本);pH计(pHS-25,中国上海虹益仪器仪表有限公司);紫外可见分光光度计(Diode Array 8452A,HP);离子色谱分析仪(Dionex DX500,美国);FT-IR红外光谱仪(Magna-IR 860,Nicolet); Zata电位测定仪(ZEN3600,Malvern Instruments);TOC分析仪(Dohrmann Apollo 9000,TEKMAR);COD分析仪(DR/2000,HACH).1.2 实验过程1.2.1 软锰矿(MWs)的合成称量 0.9g KMnO4溶于 250mL锥形瓶盛装的40mLDW中,混合均匀,滴入少量浓 HCl,摇匀.置于超声浴中(超声功率40kHz),60℃下反应 30min,得到黑褐色沉淀产物,4000r/min离心10min,多次水洗,无水乙醇洗涤,60℃真空干燥.1.2.2 脱色实验将50mLMB溶液(0.05g/L)倒入100mL烧杯中,使用0.1mol/L HCl和0.1mol/L KOH调节pH值,加入定量MWs,室温搅拌.在一定时间间隔内,取5mL反应液立即离心 10min(4000r/min)以去除溶液中的 MWs,上清液于λmax=664nm 处进行分析,MB校准曲线为 y=0.1843x+0.0272(R2=0.998).MB 分子式为C16H18ClN3S,其结构式、664nm处吸收光谱图以及校准曲线如图1所示.脱色率计算公式如下:式中:C0和Ct分别为MB初始浓度和反应时间t时的浓度,mg/L.图1 MB分子结构式、664nm处吸收光谱图及其校准曲线Fig.1 Molecular structure, absorbance spectrum at 664nm and calibration standard curve of MB2 结果与讨论2.1 MWs合成与表征MWs 的 XRD(a)、SEM(b)和 EDS(c)谱图表征如图 2所示.由图 2a可见 MWs晶型较差,于2θ=~36.7°和~65.7°处有 2 个较强的宽峰,与JCPDS卡的 MnO-MnO2-H2O(JCPDS-02-1070)相符,为软锰矿.由图2b可见,MWs呈片层堆积球形花状聚集态,直径为 400~900nm.由图 2c测定结果可知,MWs含有Mn、O和K 三种元素,隔层间含有水分子,根据其化学成分组成可推断其表达式为K0.2MnOMnO2·1.4H2O.图2 MWs的XRD、SEM和EDS谱图Fig.2 XRD pattern, SEM image and EDS of MWs2.2 MWs脱色性能研究2.2.1 溶液pH值对脱色率影响溶液pH值是染料去除的重要影响因素.为了研究pH值对MB脱色率的影响,实验pH值范围选取1.5至10.为了准确测定MB溶液在所有pH值范围内的吸收峰强度,取2mL上清液用DW稀释8倍后再进行分析.MWs投加量为 1.0g/L,搅拌反应 30min,pH值对MB脱色率的影响如图3a所示,当pH<2时脱色率达99%.在脱色过程中,MB溶液由原来的深蓝色变为紫色再变成无色,这是由于经过脱色和降解处理后的 MB最大吸收波长发生蓝移所致.MB 的脱色受pH值影响程度很大,最佳pH值为1.5,随着pH值的增加,脱色效果明显降低,MB溶液的吸收峰基本上亦没有显著降低.图3a内插图为脱色处理30min后测得的MB溶液随pH值的增加而逐渐增强的吸收峰强度示意图,表明pH值愈大则脱色效果愈差.实验测得 MWs的 pHzpc为 3.2(图3b).当溶液 pH值低于或者高于 pHzpc时,则物体颗粒表面电荷呈正电荷或者负电荷状态,颗粒将分别与带有负电荷或者正电荷的颗粒发生静电吸引作用.不过,MWs脱色实验中最佳 pH值 1.5低于其pHzpc值,表明较低pH值时MWs活性的增强是因为 Mn(IV)/Mn(II)还原势利于其电子传输,而并非正负电荷之间的静电吸引作用.另一方面,当pH>3.2时,MWs的表面电荷为负,利于Mn(IV)所还原的Mn(II)在MB脱色过程中的吸附,这反过来即抑制了MB 在MWs表面的吸附.这两种机理的谐合效应导致在更高pH值下MWs对MB氧化脱色效果的降低[19].图3 pH值对脱色率影响与MWs的pHzpc值Fig.3 Effect of pH on the decolorization raete and the pHzpc value of MWs2.2.2 MWs投加量对脱色率影响 pH=1.5、反应时间为30min时MWs投加量对50mLMB溶液(50mg/L)脱色率影响如图 4所示.随着投加量的增加,600nm处吸收峰强度明显降低,最大脱色率达98%以上,当增加到2.4g/L时,峰强降低有限.为了节约成本,MWs最佳投加量定为2.4g/L.图4 MWs投加量对脱色率影响Fig.4 Effect of the MWs dosage on the decolorization rate2.2.3 反应时间对脱色率影响图5为pH值为1.5、MWs投加量为2.4g/L和反应时间分别为1,2,5,15,30,60,90,120min时MB溶液(50mg/L)的脱色率及其 UV-Vis吸收峰强度变化(内插图).反应30min后,MB的吸收峰显著降低,说明MB分子发生了降解反应.在 664nm 处快速达到较好脱色效果,脱色率达 99%以上.不过,MB 的吸收峰强度向低波区 600nm 处发生蓝移,在此波长下呈现出不同强度的吸收峰.MB颜色随反应时间的增加而逐渐褪去,直至变为无色.由图 5可知,MB在90min内几乎完全去除.图 5a内插的谱图变化与 Zhang等[20]报道的β-MnO2纳米棒催化氧化处理MB的结果相似.MWs比其他催化剂(如 Mn3O4/H2O2于3h内最大脱色率99.7%[3]、ZnS/CdS光照6h内最大脱色率仅为73%[9]、硫改性TiO2在4h内脱色率近100%[21])具有更好的脱色效果(90min内脱色率近100%).MWs对MB的成功脱色行为还可由图5b可见,MB初始溶液颜色为深蓝色且不透明,经过脱色处理后的MB溶液(MB AT)则呈透明无色.上清液中残余的 MB 仅为10μg/L,相应的脱色率为99.8%,其无色透明度接近于DW,MB颜色的去除即为母体分子转变为无色分子的降解结果[6].图5 反应时间对脱色率影响及MB初始溶液(MB)、经MWs脱色处理后的MB溶液(MB AT)和DW颜色比较Fig.5 Effect of reaction time on the decolorization rate and the photographs of initial MB solution (MB), the suspension liquid of the MB solution treated by MWs (MB AT) and DW 2.2.4 MB初始浓度对脱色率影响图 6a为pH1.5、MWs投加量 2.4g/L时 MB 初始浓度(6.25~100mg/L)对脱色率影响.当初始浓度为6.25和12.5mg/L时,MB 仅需30min即可完全脱色,600和 664nm 处的吸收峰消失.另一方面,290nm处的峰强亦逐渐减低但并未发生波长偏移.随着初始浓度的增加,MB的脱色率明显降低.搅拌30min后,较高浓度MB溶液在600nm处的脱色效果显著降低,这是因为MWs和MB之间的表面络合物的形成抑制了MB向MWs活性中心发生电子传输的脱色过程,该变化趋势与 Zhu等[22]的报道相类似.由此可见,表面活性和活性电位数量是控制MB脱色的两个关键因素[19].较高浓度时脱色效果的降低可能是由于MWs表面活性电位达到饱和,从而抑制了其络合前体发生进一步的电子传输作用.当pH值为1.5、MWs投加量为2.4g/L、MB初始浓度为6.25,12.5,25,50,100mg/L时,测定MB脱色的动力学常数.反应遵循准一阶反应方程:ln(Ct/C0)=−kt,式中, C0和Ct分别为MB初始浓度和t时间处的浓度;k为速度常数.ln(Ct/C0)对t作图的斜率为−k,如图 6b所示.当初始浓度为6.25mg/L 时,得到较大的速度常数6.43×10−2min−1,而相同条件下初始浓度为100mg/L时,速度常数为1.35×10−2min−1,相关系数 R2 大于0.99.Zhu等[23]也报道了k值随染料初始浓度的增加而降低的结果.实验还发现脱色过程结束时所测pH值比初始值略微升高0.2,此增加值可忽略不计,这与pH值低于2时脱色效果保持不变这个结果是一致的,可见MB与MWs之间的吸附–催化降解–脱附系列过程是主要影响因素.当 MB初始浓度较高时,而 MWs表面活性点位有限,从而导致脱色较差的实验结果.图6 MB初始浓度对脱色率影响以及MB不同初始浓度的脱色动力学实验Fig.6 Effect of MB initial concentration on the decolorization rate and influence of MB initial concentration on the decolorization kinetics2.2.5 MWs的重复使用性能为了验证MWs的重复使用性能,实验将处理 MB溶液之后的 MWs进行离心过滤回收,然后在最佳脱色条件下重复进行脱色实验.MWs 循环使用次数与催化脱色效果之间的关系如表1所示.如果将其重复使用1~2次,需延长反应时间方可达到较好的脱色效果.但重复多次后,即便延长反应时间其脱色效果仍然较差.由此可见,MWs的重复使用性能较差.表1 MWs循环使用次数与催化脱色效果之间的关系Table 1 The relation between the cycle usage times of MWs and the decolorization efficiencyMWs循环使用次数 1 2 3 4 5反应时间(h) 20 48 60 86 98脱色率(%) 99.05 98.72 88.82 69.98 58.98图7 MB、MWs和处理MB后过滤得到的MWs的FT-IR谱图以及处理MB之后MWs表面的EDS谱图Fig.7 FT-IR spectra of MB, MWs and MWs after treating the MB solution and EDS spectrum of MWs after treating the MB solution2.3 脱色降解机理分析图 7(A)为 MB(a),MWs(b)和处理 MB 后的MWs(c)的 FT-IR谱图.处理 MB的实验条件为50mLMB(浓度 50mg/L),pH1.5,MWs投加量2.4g/L,反应时间 120min.在谱图(A)中曲线 a中,1599和1393cm-1处吸收峰分别为MB杂环上的C=N和C—N键,而1354和1335cm-1的吸收峰则分别为与苯环连接的 C—N键和—N—CH3键[1].不过,MB的这些特征吸收峰均未出现在MWs的FT-IR 谱图中[曲线(c)].曲线(b)和(c)没有明显区别,表明脱色过程结束时MB分子并未吸附在MWs颗粒表面,而是被MWs氧化降解为无色物质.另外,由图 7(B)中处理 MB后的 MWs的EDS图谱亦可得出该结论.另外,当pH1.5、投加量为2.4g/L时MWs对MB溶液的氧化程度如图 8所示,采用离子色谱分析仪对脱色过程中MB悬浮液中和的浓度变化进行测定.和标液的标准校正曲线方程分别为 y1=472252x1+117097(R2=0.9993)和 y2=341013x2-59658(R2=0.9998),式中x1、x2 和 y1、y2 分别为和吸收强度和浓度(mg/L).50mLMB初始溶液(50mg/L)中的和的浓度分别为 2.15 和 2.38mg/L.由图8a可知,随着搅拌反应时间的增加,脱色过程中产生了和并发生了浓度变化.搅拌30min后约有 29.20%的总硫转化为 ,测得其浓度为 236.93mg/L.不过,当反应时间增加到120min时,的浓度降至 5.46mg/L,这可能是由于Mn2+的强还原电位将还原为所致[24].相同条件下,的浓度随搅拌时间的增加而增加.当反应150min时,约有34.27%的总氮转化为,测得其浓度为10.78mg/L.结果表明MB可被MWs完全脱色和部分降解.图8b为不同pH值下被MWs氧化的MB分子的碳氧化数(CON).CON计算公式[25]如下:式中:TOC和COD(mmol/L)分别为不同pH值下MWs处理后的MB溶液中TOC 和COD值.由图8b可见,随着pH值的增加,MB的CON显著降低,表明MB氧化程度的降低.当pH<2时,CON达到最大值2.2,表明溶液中MB分子在最佳的脱色条件下发生了部分氧化降解.图8 不同反应时间时MB溶液中和的浓度变化以及不同pH值时被MWs氧化的MB的CONFig.8 Variations of and concentrations in MB solution for different reaction time and CON of MB oxidized by MWs at varying pH3 结论3.1 首次采用 KMnO4与 HCl的氧化还原反应通过简便低廉的超声方法合成花状软锰矿(MWs).XRD谱图证实了产物MWs的形成.3.2 MWs对MB具有优良的脱色性能,对于初始浓度为50mg/L的50mLMB溶液,最佳脱色条件为pH 1.5、MWs最佳投加量2.4g/L、搅拌反应时间 90min,最大脱色率近 100%.从脱色实验效果可知,诸变量因素的影响大小为 pH>MB初始浓度>反应时间>MWs投加量. 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Applied Catalysis B: Environmental, 2004,47(2):133-140. [13]王鹍,夏平平,刘凡,等.模拟环境条件下δ-MnO2氧化As(III)的搅拌流动动力学特征 [J]. 中国环境科学, 2014,34(4):966-975.[14]Hou Y, Cheng Y W, Hobson T, et al. Design and Synthesis of Hierarchical MnO2Nanospheres/Carbon Nanotubes/Conducting Polymer Ternary Composite for High Performance Electrochemical Electrodes [J]. Nano Letters, 2010,10(7):2727-2733.[15]Xu C, Li B, Du H, et al. Electrochemical properties of nanosized hydrous manganese dioxide synthesized by a self-reacting microemulsion method [J]. Journal of Power Sources, 2008,180(1):664-670.[16]Qiu G, Huang H, Dharmarathna S, et al. Hydrothermal synthesis of manganese oxide nanomaterials and their catalytic and electrochemical properties [J]. Chemistry of Materials, 2011,23(17):3892-3901.[17]Yang L, Hu C, Nie Y, et al. Catalytic ozonation of selected pharmaceuticals over mesoporous aluminum-supported manganeseoxide [J]. Environmental Science and Technology,2009,43(7):2525-2529. [18]Zhang L, Nie Y, Hu C, et al. 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基于普鲁士蓝纳米立方体的比色及光热传感

基于普鲁士蓝纳米立方体的比色及光热传感

基于普鲁士蓝纳米立方体的比色及光热传感基于普鲁士蓝纳米立方体的比色及光热传感引言:近年来,纳米技术的发展使得纳米颗粒在生物医学领域中得到广泛应用。

普鲁士蓝纳米立方体是一种具有优异光热性能和比色性能的纳米材料,其在生物医学领域具有广阔的应用前景。

本文将探讨基于普鲁士蓝纳米立方体的比色及光热传感技术的原理、应用和进展。

第一部分:普鲁士蓝纳米立方体的制备及表征普鲁士蓝是一种具有深蓝色的配合物,其化学名称为六氰合亚铁。

普鲁士蓝纳米立方体是通过纳米技术将普鲁士蓝转化为纳米尺度颗粒而得到的。

制备普鲁士蓝纳米立方体的方法主要包括溶剂热法、沉淀法和模板法等。

在制备过程中,可以通过控制反应条件和添加表面修饰剂等手段来调控普鲁士蓝纳米立方体的尺寸和形貌。

表征方面,常用的方法有透射电子显微镜(TEM)、扫描电子显微镜(SEM)和X射线衍射(XRD)等。

第二部分:普鲁士蓝纳米立方体的比色性能普鲁士蓝纳米立方体显示出特殊的比色性能,即在不同浓度或环境中呈现出不同的颜色。

这种性质可以用于检测溶液中特定物质的浓度变化,例如检测重金属离子、有机物和生物分子等。

普鲁士蓝纳米立方体的比色性能基于其在纳米尺度下的表面等离子共振效应,当溶液中目标物浓度发生变化时,普鲁士蓝纳米立方体的表面等离子共振效应会发生改变,进而导致颜色的变化。

通过颜色变化的定量分析,可以实现对目标物浓度的灵敏检测。

第三部分:普鲁士蓝纳米立方体的光热传感性能普鲁士蓝纳米立方体还具有优异的光热传感性能,可用于光热治疗和光热成像等应用。

普鲁士蓝纳米立方体对特定波长的光束具有较高的吸收率,吸收光能后可转化为热能,从而引起局部温升。

利用这种光热效应,可以实现对癌细胞的选择性破坏。

此外,基于普鲁士蓝纳米立方体的光热传感技术还可以用于纳米温度计的构建,以及热响应材料的研究等领域。

结论:基于普鲁士蓝纳米立方体的比色及光热传感技术具有广泛的应用前景。

普鲁士蓝纳米立方体的比色性能和光热传感性能,使其在生物医学领域中成为一种重要的研究对象。

CoFe类普鲁士蓝纳米立方的合成及超电容性能

CoFe类普鲁士蓝纳米立方的合成及超电容性能

CoFe类普鲁士蓝纳米立方的合成及超电容性能孙囡翾;王芸;魏文硕;宋朝霞;刘伟【摘要】利用化学共沉淀法,制备CoFe类普鲁士蓝纳米立方(CoFePBA)超级电容器电极材料.利用X射线衍射仪(XRD)和扫描电子显微镜(SEM)对样品进行物理表征;利用循环伏安法(CV)、恒电流充放电法以及交流阻抗法(EIS)对样品的电化学性能进行研究.结果表明:CoFePBA材料为具有面心立方结构的棱长约400 nm的立方颗粒,且表面光滑、颗粒均匀,在氯化钴和铁氰化钾摩尔比为2:1时,产物CoFePBA 电化学性能最佳,于中性介质1 mol/L硫酸钠溶液中,在1 A/g电流密度下,比电容能达到444.4 F/g,电流密度增大至5 A/g时,比电容仍能保持在423.1 F/g,2000次充放电循环后,在1 A/g电流密度下比电容保持在439 F/g,容量衰减小于2%.%CoFe Prussian blueanalogue (CoFePBA) nanocubes were prepared by chemical co-precipitation method as electrode materialsfor supercapacitors. Thestructure andmorphology of the CoFePBA materials were characterized by X-ray diffraction (XRD) andscanning electron microscope (SEM). The electrochemical propertieswere investigated by cyclic voltammetry(CV), galvanostatic charge-discharge test and electrochemical impedance spectroscopy(EIS). The results show that the CoFePBA materials withface-centered cubic (FCC)structure are synthesized innanocube morphology with smooth surface anduniform size distribution, and the edge length ofCoFePBA nanocubesis about400 nm.The CoFePBA material prepared with the molarratio of CoCl2 to K3[Fe(CN)6]of2:1 showsthe best electrochemical performance. In the neutral1 mol/LNa2SO4 solution,the as-prepared CoFePBA material exhibitsspecific capacitancesashigh as 444.4F/g and 423.1 F/gatthecurrent densityof1A/gand 5A/g, respectively.During the continuous charging and discharging at a current density of 1 A/g, the specificcapacitance remains 439 F/g after 2000 cycles, and the decrease of the capacitance is less than 2%.【期刊名称】《电子元件与材料》【年(卷),期】2018(037)001【总页数】5页(P35-39)【关键词】超级电容器;电极材料;中性;金属有机骨架材料;纳米立方;铁氰化钾【作者】孙囡翾;王芸;魏文硕;宋朝霞;刘伟【作者单位】大连理工大学化工学院,辽宁大连 116024;大连理工大学化工学院,辽宁大连 116024;大连理工大学化工学院,辽宁大连 116024;大连民族大学生命科学学院,辽宁大连 116600;大连理工大学化工学院,辽宁大连 116024【正文语种】中文【中图分类】TM53金属有机骨架材料(MOF)是金属离子或金属簇通过配位键与有机配体结合形成的一类新型有机-无机杂化功能材料,具有高孔隙率、大比表面积和形态可调节的优点,作为多功能材料在催化、气体储存与分离、传感和储能等方面均有应用。

纳米氧化铜制备

纳米氧化铜制备

纳米氧化亚铜的制备及其应用的研究进展( 1.摘要: 纳米氧化亚铜是一种新型的p 型半导体材料, 具有活性的空穴电子对和良好的催化活性, -因其独特的性质而在诸多领域有着广泛的应用。

总结了近年来制备纳米氧化亚铜的方法, 比较了它们在粒径、晶型形态控制以及制备条件等方面的优缺点, 并介绍了其性质、应用等方面的研究进展。

关键词: 纳米氧化亚铜; 制备; 应用; 纳米材料中图分类号: O 613. 71; O 647. 33 文献标志码: A 文章编号: 0367 6358( 2011) 09 0573 04 -Research A dvances in the Preparation and A pplication of N ano Cu2 O WA NG Ye1 , YANG F eng 2*( 1 . Company 9 , S econd M i l it ary M e di cal Uni v ersi ty ; 2 . De par t me nt of I nor gani c Chemi str y , Phar macy S ch ool , Se cond M i li t ary M ed i cal Univ e rsi ty , Sh anghai , 200433 , China)Abstract: As a noval p t y pe semiconducto r ( dir ect band g ap 2. 17 eV ) , nano Cu 2 O mat erial has activ e elect ron cavity pairs and g ood cat alyt ic act ivit y, t her ef ore, it has been ex tensively applied in various fields. P reparation methods of nano Cu 2 O in r ecent years are review ed, co mparing t he merits and short comings in par ticle size, cryst al morpholog y cont rol and preparat io n co nditions. F ur thermor e, adv ances in propert ies and applicat ions are int ro duced. Key words: nano Cu 2 O; preparat ion; applicat ion; nano material -纳米材料已在物理、化学、医学、生物学、航空航天等诸多领域表现出良好的应用前景机纳米材料领域, 纳米Fe 3 O 4[ 2] [ 1]要的合成方法有液相合成法、低温固相法、气相沉积法、纳米铜氧化法、电解法、射线干预法、微波干预法等。

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Home Search Collections Journals About Contact us My IOPscienceLarge-scale synthesis of copper nanoparticles by chemically controlled reduction for applications of inkjet-printed electronicsThis article has been downloaded from IOPscience. Please scroll down to see the full text article.2008 Nanotechnology 19 415604(/0957-4484/19/41/415604)View the table of contents for this issue, or go to the journal homepage for moreDownload details:IP Address: 202.115.11.97The article was downloaded on 17/06/2010 at 01:15Please note that terms and conditions apply.IOP P UBLISHING N ANOTECHNOLOGY Nanotechnology19(2008)415604(7pp)doi:10.1088/0957-4484/19/41/415604Large-scale synthesis of copper nanoparticles by chemically controlled reduction for applications ofinkjet-printed electronicsYoungil Lee,Jun-rak Choi,Kwi Jong Lee,Nathan E Stott andDonghoon KimSamsung Electro-Mechanics,Central R&D Institute,Electro-Materials and Devices(eMD)Center,Functional Materials Technology Group,Nanomaterials Team,314Maetan-3-DongYeongtong-Gu,Suwon,Gyeonggi-Do443-743,KoreaE-mail:youngil1.lee@Received22March2008,infinal form3July2008Published4September2008Online at /Nano/19/415604AbstractCopper nanoparticles are being given considerable attention as of late due to their interestingproperties and potential applications in many areas of industry.One such exploitable use is asthe major constituent of conductive inks and pastes used for printing various electroniccomponents.In this study,copper nanoparticles were synthesized through a relativelylarge-scale(5l),high-throughput(0.2M)process.This facile method occurs through thechemical reduction of copper sulfate with sodium hypophosphite in ethylene glycol within thepresence of a polymer surfactant(PVP),which was included to prevent aggregation and givedispersion stability to the resulting colloidal nanoparticles.Reaction yields were determined tobe quantitative while particle dispersion yields were between68and73%.The size of thecopper nanoparticles could be controlled between30and65nm by varying the reaction time,reaction temperature,and relative ratio of copper sulfate to the surfactant.Field emissionscanning electron microscopy(FE-SEM)and transmission electron microscopy(TEM)imagesof the particles revealed a spherical shape within the reported size regime,and x-ray analysisconfirmed the formation of face-centered cubic(FCC)metallic copper.Furthermore,inkjetprinting nanocopper inks prepared from the polymer-stabilized copper nanoparticles ontopolyimide substrates resulted in metallic copper traces with low electrical resistivities( 3.6μ cm,or 2.2times the resistivity of bulk copper)after a relatively low-temperaturesintering process(200◦C for up to60min).1.IntroductionWith increasing demands for more economic routes to the manufacture of electronic devices incorporating polymer-based printed circuit boards(PCBs),various techniques for the fabrication of microelectronic devices,including screen printing,nano-imprinting,inkjet printing,and direct printing, are generating increasing interest.Among these methods, inkjet printing is considered to be an economical and highly functional technology for the microscale patterning of metallic traces in microelectronic devices.Thus,many research efforts are currently being devoted to develop the inkjet printing method as a patterning tool that will substitute traditional photolithography methods used for making micron-sized patterns[1].Conventional lithographic processes are well developed but include multiple steps that are time consuming,uneconomical,and not versatile towards corrective repatterning[2,3].However,the employment of inkjet printing can solve many of the problems in a facile and effective manner.The inkjet printing method allows for the patterning of conductive traces onto a substrate in one step,therefore reducing the time,cost,and space consumed and the toxicwaste created during the manufacturing process[1,4–6].The fully data driven and maskless nature of drop on demand (DOD)inkjet processing allows more versatility than other direct printing methods,such as easily allowing corrective overprinting.Inkjet printing is an additive method in which materials dispersed in a carrier solution are deposited onto a given substrate by piezo-electrically driven micro-nozzles. Such a solution processing-based method provides enhanced flexibility for choosing both the deposition material and the substrate[7].Nanomaterials are considered to be highly useful for application of materials through inkjet printing technology based on size-dependent mesoscopic properties such as enhanced dispersibility,melting point depression below that of the same bulk material based on more significant surface energy instability,and greater compatibility with various chemical and physical environments due more significant effects from interchangeable surface coatings.Inkjet printing technology employing conductive silver inks has been developed recently in order to manufacture low-cost disposable electronics,such as smart packaging,RF-ID tags, and digital calendars.Various silver inks based on organosilver compounds and silver nanoparticle suspensions have been used for inkjet printing conductive traces[8–10].However,silver as a conductive material has problems due to ion migration at relatively high-temperature and humidity conditions as well as cost-benefit issues compared to copper,which is significantly less expensive for virtually identical bulk conductivities.Thus, copper-based nanoparticle inks are being considered as a preferable material for microscale patterning.However,some disadvantages of copper which must be overcome are that the copper ion is not easily reduced under mild reaction conditions and copper nanoparticles tend to be easily oxidized in air under ambient atmospheric conditions in comparison to noble metals like gold and silver.Many schemes reported in the literature have been devel-oped for the preparation of copper particles,such as thermal decomposition,microemulsions,UV irradiation,reduction of aqueous copper salts,and the polyol process[11–15]. However,most of the synthetic methods are not economically feasible due to low throughput(<0.1M)and poor scalability. Furthermore,the sizes of copper particles produced from many of these methods are in the submicron to micron regimes, resulting in lower dispersion stabilities and higher melting points.Thus,in order to reap the economic benefits of inkjet-printed electronics,economically feasible processes to produce nanomaterials must be developed to overcome the low-concentration conditions typical for nanoparticle formation and lack of scalability due to temperature and mixing gradients in batch processes.Additionally,inkjet-printed materials must be processable into high-performance electronic components at low enough temperatures to yield additional economic benefits through allowing the use of inexpensive plastic substrates that tend to warp and melt at higher processing temperatures.In this research,a large-scale(5l),high-throughput (0.2M)process for the synthesis of copper nanoparticles was developed using a modified polyol process that includes chemical reduction and hot addition.Furthermore,these copper nanoparticles were dispersed into an ether-based solvent,patterned onto various substrates through inkjet printing,and then converted into conductive metallic traces through a relatively low-temperature,reductive sintering process.2.Experimental details2.1.Materials and synthesisPolyvinylpyrrolidone(PVP,K-30),sodium hypophosphite monohydrate(NaH2PO2·H2O),copper sulfate pentahydrate (CuSO4·5H2O),ethylene glycol,acetone,and2-(2-butoxy-ethoxy)ethanol were all analytical grade and used without further purification.Copper nanoparticles were synthesized by the following procedure: 1.11kg PVP and400g sodium hypophosphite were mixed into4l ethylene glycol inside a round-bottom flask while vigorously stirring at room temperature under ambient atmosphere.The mixture was heated to90◦C at a rate of5◦C min−1.Then,1l of a1M solution of copper sulfate in ethylene glycol at90◦C was rapidly added into the PVP/sodium hypophosphite solution while stirring vigorously. As reduction occurred,the color of the suspension turned from green to henna within2–3min,indicating the formation of copper nanoparticles.The reaction was quenched and the suspension was rapidly cooled by adding chilled deionized (DI)water.The copper nanoparticles were separated and washed with DI water by centrifugation,while using acetone as a non-solvent,in order to remove excess PVP and side products.The resulting precipitates were dried under vacuum at40◦C for2–3h.Reaction yields were determined through gravimetric analysis of isolated,vacuum-dried samples where the contributions of surface organics and volatiles based on TGA data were removed.Dispersion yields were determined by the following procedure.A known weight of copper nanoparticles was dispersed into ethanol at20%by weight through shear mixing for15min followed by microfluidization.The resulting dispersion was centrifuged at3000rpm for3min.The supernatant was decanted and the resulting sediment was dried in a vacuum oven to completeness.Finally,the dispersion yield was determined from the known starting weight of copper and the weight of sediment found by gravimetric analysis.The copper nanoparticles that remained dispersed in the ethanol supernatant were isolated and then used for ink production.2.2.Inkjet printing and reductive sinteringConductive inks at30%weight of copper were prepared from dispersible copper nanoparticles by shear mixing into2-(2-butoxyethoxy)ethanol for15min followed by microfluidization.The resulting nanocopper inks were pressed through0.4μm syringefilters to eliminate any large particles, aggregates,and agglomerates.Conductive traces were printed onto various substrates using an iTi industrial inkjet printing system equipped with a Dimatix Spectra SE piezoelectric print head that has128nozzles of38μm diameter.The distancebetween the nozzles and the substrate was500mm.While a common problem with particles that have poor dispersive properties in inks,clogging of the print head nozzles did not occur during these experiments.The substrate temperature was maintained at85◦C to cause the ink to cure more quickly.After printing at a resolution of500dpi,the copper ink patterns were cured and sintered at200◦C for1h in a tube furnace under reductive atmosphere(nitrogen gas bubbled through formic acid)to reverse and prevent oxidation.2.3.CharacterizationThe size and shape of the copper nanoparticles were determined usingfield emission scanning electron microscopy (FE-SEM,S-4700,Hitachi,Japan)and transmission electron microscopy(TEM,JEM2000FXII,JEOL,Japan)with an accelerating voltage of200kV.The crystal structure of the copper nanoparticles was identified using x-ray diffractometry (XRD,D/max-2500,Rigaku,Japan)operated at40kV and 150mA with Cu Kαradiation and confirmed by selected area electron diffraction(SAED)performed during TEM imaging.The size distributions of copper nanoparticles were determined through dynamic light scattering(DLS,Nanotrac NPA252,Microtrac,USA),and the average particle sizes were calculated from XRD patterns according the Scherrer equation:L=Kλβcosθwhere L is the average particle size,K is the Scherrer constant related to the shape and index(hkl)of the crystals,λis the wavelength(1.7889˚A)of the x-rays,βis the additional broadening(in radians),andθis the Bragg angle. The content of organics on the surfaces and oxidation onset temperature for the copper nanoparticles were determined by performing thermo-gravimetric analysis(TGA,SDT Q600, TA Instruments,USA)in both nitrogen and air with a heating rate of10◦C min−1from room temperature to600◦C. Viscosities were measured by rheometry(DV-III+,spindle #18,Brookfield,USA),and surface tensions were measured by tensiometry(K10ST,Kr¨u ss,Germany)for the copper inks in which the measuring temperature was maintained at25◦C by a temperature-controlled circulator.The specific electrical resistance(resistivity)was calculated from four-point probe resistance and optical profilometry(VK-9510K3-D Profile Microscope,Keyence,Japan)measurements with the equationρ=R Awhereρis the resistivity,R is the electrical resistance,A is the cross-sectional area(film thickness),and is the length.3.Results and discussion3.1.Synthesis of copper nanoparticlesThe mechanism of metal reduction by hypophosphite ions has been described by various schemes[16].Some authorshave Figure1.FE-SEM image of copper nanoparticles.The sample was prepared from an ethanol dispersion dropcast and dried into a thinfilm on a PI substrate,followed by sputter coating a thin layer of platinum for added contrast.proposed that the metal ions are reduced by atomic hydrogen evolving from the reaction of hypophosphite with water:H2PO−2+H2O→H2PO−3+2H.(1) In this case,the total reduction process may be written as follows:M2++H2PO−2+H2O→M0+H2PO−3+2H+.(2) Evolution of gaseous hydrogen is explained by recombination of atomic hydrogen:2H→H2.(3) However,it has been experimentally established that the reduction of one M2+cation corresponds to oxidation of two hypophosphite anions according to the equationM2++2H2PO−2+2H2O→M0+2H2PO−3+2H++H2.(4) Color changes during the course of the reaction indicate the formation of different complexes between copper sulfate and hypophosphite.As the copper sulfate solution is introduced into the hypophosphite solution,the blue copper sulfate solution becomes colorless(stage I),then turns green(stage II), andfinally turns henna(stage III).The intermediate steps of the reduction mechanism for the synthesis are described as follows.Stage I—formation of colorless copper(II)complex:2[Cu(H2O)6]2+Blue+4H2PO−2→[Cu2(H2O)4·(H2PO2)4]0Colorless.(5) The neutral complex may be either mononuclear or dinuclear. The probability of forming the dinuclear complex is higher for higher reactant concentrations.Stage II—reduction of copper(II)to copper(I)with concomitant formation of green copper(I)complex:[Cu2(H2O)4·(H2PO2)4]0+H2OColorless→[Cu2(H2O)4·(H2PO2)3·(H2PO3)]2−+2H+Green.(6)(a) (b)Figure 2.(a)TEM image and (b)corresponding SAED pattern of the copper nanoparticles obtained under optimum synthetic conditions.Diameter(nm)D i s t r i b u t i o n (%)Figure 3.DLS of as-prepared copper nanoparticles without size selection.The resulting green color is a typical characteristic of copper(I)salt solutions.Stage III results from further reduction to yield highly dispersed metallic copper,causing the solution to turn henna in color.Stage III—reduction of copper(I)to dispersed copper(0):[Cu 2(H 2O )4·(H 2PO 2)3·(H 2PO 3)]2−Green+H 2O→2Cu 0Henna+2H 2PO −2+2H 2PO −3+2H +.(7)By combining reaction equations (5)–(7),the following equation is obtained:Cu 2++H 2PO −2+H 2O =Cu 0+H 2PO −3+2H +.(8)From the combined equation,it can be seen that the consumption of hypophosphite anion is directly related to copper reduction.As can be predicted based on equations (8)and Le Chatelier’s Principle,an excess quantity of hypophosphite being introduced into the reaction system will cause the20304050607080I n t e n s i t y (a .u .)2θCu(111)Cu(200)Cu(220)(b) After 20 days(a) As-preparedFigure 4.X-ray diffraction patterns of isolated copper nanoparticles (a)soon after and (b)20days after preparation.reduction rate of copper cation to become faster.However,in the case of extreme excesses of hypophosphite,the reaction system becomes unstable due to the sudden evolution of gaseous hydrogen that is generated.Thus,it is important that the synthesis be carried out at an optimum mole ratio of hypophosphite-to-copper precursor.Under the optimized conditions presented in this paper,the synthesis of copper nanoparticles results in virtually quantitative reaction yields as found from a combination of recovery data generated by gravimetric analysis and TGA.The polyol in the polyol process acts as both a solvent and reducing agent.Additionally,the polyol stabilizes the surfaces of the particles to help prevent agglomeration and the uncontrolled growth of particles [17,18].Thus,the polyol helps facilitate the growth of smaller particles in more narrow size regimes.However,the reaction rate of the polyol process is relatively slow,often requiring the reaction solution to be held under refluxing conditions for much longer times.In aqueous chemical reductions used to prepare copperFigure5.Conductive copper pattern inkjetted onto polyimide substrate.(Thisfigure is in colour only in the electronic version)particles,sodium hypophosphite is commonly employed as a reducing agent,the reaction rate of systems being very fast due to the strong complexation of hypophosphite-to-copper ions.However,the agglomeration of particles in such schemes is often severe[19].The synthetic procedure introduced in this study has several important advantages over conventional polyol and aqueous preparation methods by combining the quick,low-temperature reducing powers of sodium hypophosphite with the enhanced stability of polyol solvent.Furthermore,copper nanoparticles with improved size and uniformity are obtained by exploitation of the hot addition technique.Finally,this single synthetic process to produce well-dispersed copper nanoparticles at47–50gram scale quantities provides additional means of control through modifying the reducing agent-to-copper precursor mole ratio along with reaction conditions,such as temperature and time.The dispersion stability of the nanoparticles is a key property with respect to inkjet printing performance.Even the most monodisperse nanoparticles of an ideal size are useless for inkjet applications in the case of poor dispersion stability.One of the additional strengths of the synthesis presented in this work is the relatively high dispersion stability of the resulting nanoparticles,which were typically between 68and73%.Dispersible copper nanoparticles in2-(2-butoxyethoxy)ethanol inks were stable for more than three weeks in a stationary state without any significant additional sedimentation.Two factors may contribute to this enhanced dispersion stability.First,the smaller sizes of copper nanoparticles reported in this work compared to others in the literature that are in the lower submicron size regime and contain more significant amounts of copper nanoparticle agglomerates and aggregates[20].Second,the addition of PVP as a surfactant polymer that coats the nanoparticle surfaces.In many metal nanoparticle preparations,PVP is typically added as a protective surface coating that controls the growth during the reaction,prevents aggregation through steric hindrance during and after the reaction,and interacts with polar solvents to aid in dispersing the nanoparticles.3.2.Size and shape analysesCopper nanoparticles separated from the henna-colored suspension were analyzed for their size distribution and shape by FE-SEM,TEM,and DLS,along with a comparison to average sizes calculated from XRD peak data.Figure1shows an FE-SEM image of copper nanoparticles as prepared by the reported process,revealing spherically shaped particles with some agglomeration and aggregation.Figure2depicts a TEM image and the corresponding selected area electron diffraction (SAED)pattern of the as-prepared product.This image also shows that the product consists of spherical primary particles, and the diffraction pattern yields further confirmation of an FCC structure.Figure3depicts the size distribution based on DLS data,revealing that most of the distribution falls between 30and65nm in diameter,with a number-weighed mean of 55nm.3.3.Crystallographic characteristicsXRD patterns of the copper nanoparticles prepared for this work are displayed infigure4with2θvalues between20◦and90◦.The XRD pattern infigure4(a)showsthree characteristic peaks at44.6◦,51.8◦,and76.2◦for the respectively marked indices of(111),(200),and(220).These characteristic peaks confirm the formation of a face-centered cubic(FCC)copper phase without significant oxides or other impurity phases.Generally,nanoscale particles are metastable owing to higher percentages of surface area,causing them to be more readily oxidized in air.However,the copper nanoparticles in this work show a significantly oxide-free, stable FCC copper phase even after20days of storage in a vial under ambient conditions(figure4(b)).The average primary particle size of the copper nanoparticles was calculated from the full width at half maximum(FWHM)of the(111)peaks in the XRD patterns using the Scherrer equation,resulting in an average primary particle size of parison of the average particle size calculated using the Scherrer equation with the particle sizes determined from DLS(figure3)and the sizes and shapes visible in SEM images(figure1)led to the conclusion that particles at the larger side of the distribution are agglomerates that skew the number-weighed mean size to be greater than the average primary particle size calculated from XRD data1.3.4.Ink preparation,rheological properties,and inkjet printingNanocopper ink was prepared by dispersing the dispersible copper nanoparticles into2-(2-butoxyethoxy)ethanol through shear mixing and microfluidization.The copper ink in this study had a measured viscosity of12.3cP and surface tension of29N m−1at metallic copper concentrations of 30%by weight.The dispersed copper nanoparticles could be suspended for several weeks in the stationary state and more than3min under centrifugation at3000rpm without further sedimentation.Figure5shows metallic copper traces that were printed onto a polyimide substrate using a Spectra SE head, under an optimized waveform,and then sintered at200◦C for1h under a reducing atmosphere.This print test thus confirms thatfine patterning for microelectronics is possible when employing nanocopper inks generated from this process.3.5.Thermal and electrical propertiesTGA results of the polymer-stabilized copper nanoparticles obtained under optimum chemical conditions are shown infigure6.Under a nitrogen atmosphere,sharp weight losses occur from50to170◦C and from220to350◦C, as shown infigure6(a).These are related to the drying of residual washing solvent and decomposition of polymer surface coatings respectively.The resulting organics and volatiles content is approximately7.4%by weight.Under air, 1These results are such since DLS data are generated from the scattering of the entire volume such that agglomerates are not readily distinguishable from single primary particles whereas peak narrowing for a given crystal face generated in the XRD data results from the volume of crystalline material in the primary particles without contributions from the amorphous polymer coatings. However,this explanation does involve some simplification due to the facts that different materials scatter light differently in the case of DLS and that a broad peak from amorphous solids must be subtracted from the baseline in the case of XRD.Weight(%)Temperature(o C)Temperature(o C)Weight(%)(a)(b)Figure6.TGA curves of copper nanoparticles obtained under(a)N2 and(b)air.a weight gain of about20%due to the oxidation of copper has an onset at about180◦C before stopping at about600◦C in figure6(b).This means that the copper nanoparticles begin to thermally oxidize at about180◦C and higher to form copper oxide.Thus,the sintering process of copper nanoparticles must be performed under a reducing atmosphere to avoid oxidation.The electrical resistivities of metallic copper patterns on polyimide as a function of sintering time at200◦C under a reducing gasflow are exhibited infigure7.The resistivities decreased from45μ cm after20min to 3.6μ cm,or2.2times the resistivity of bulk copper,after 60min of sintering time.This shows that the electrical resistivity is sufficiently low to behave as an electrical conductor,even though the copper nanoparticles were sintered at a relatively low temperature.Such low-temperature sintering conditions resulting in relatively low resistivities make nanocopper inks produced from this process ideal for use on inexpensive,thermally unstable plastic substrates that require lower processing temperatures to avoid warping.4.ConclusionCopper nanoparticles within a more preferable size regime have been successfully prepared at higher concentrations by a modified polyol process using sodium hypophosphite asTime(min.)S p e c i f i c R e s i s t a n c e (Ωc m )Figure 7.Resistivity of copper pattern on a polyimide substrate as a function of time sintered at 200◦C under a reducing atmosphere.a reducing agent and PVP as a stabilizing polymer.The resulting copper nanoparticles did not experience significant oxidation even after 20days under ambient storage conditions.Furthermore,these copper nanoparticles displayed excellent dispersion yields and dispersion stabilities of dispersed particles without additional sedimentation.The hot addition technique and controlling of the reducing agent-to-copper precursor mole ratio used in this study are considered to have played important roles in the resulting formation of smaller and well-dispersed copper nanoparticles.The resistivity of the resulting copper pattern was low even given the low sintering temperature.Based on the inkjet printability test in this study,copper nanoparticles synthesized by the method presented in this work can be considered a highly useful material for microscale patterning.References[1]Calvert P 2001Chem.Mater.133299[2]Arias A C et al 2004Appl.Phys.Lett.853304[3]Sabnis R W 1999Displays 20119[4]Fuller S B,Wilhelm E J and Jacobson J M 2002J.Microelectromech.Syst.1154[5]Sirringhaus H,Kawase T,Friend R H,Shimida T,Inbasekaran M,Wu W and Woo E P 2000Science 2902123[6]Hong C M and Wagner S 2000IEEE Electron Device Lett.21384[7]Ko S H,Chung J,Pan H,Grigoropoulos C P and Poulikakos D 2007Sensors Actuators A 134161[8]Peng W,Hurskainen V,Hashizume K,Dunford S,Quander S and Vatanparast R 2005IEEE Electronic Components and Technology Conf.vol 77[9]Szezech J B,Megaridis C M,Gamota D R and Zhang J 2000IEEE Trans.Electron.Packag.Manuf.2526[10]Ryu B H,Choi Y,Park H S,Byun J H,Kong K,Lee J O and Chang H 2005Colloids Surf.A 270/271345[11]Aslam M,Gopakumar G,Shoba T L,Mulla I S,Vijayamohanan K,Kulkarni S K,Urban J and V ogel W 2002J.Colloid Interface Sci.25579[12]Qi L M,Ma J M and Shen J L 1997J.Colloid Interface Sci.186498[13]Kapoor S,Palit D K and Mukherjee T 2002Chem.Phys.Lett.355383[14]Figlarz M,Fievet F and Kagier J P 1998US Patent Specification 5759230[15]Kuriahra L K,Chow G M and Schoen P E 1995Nanostruct.Mater.5607[16]Chernogorenko V B and Tasybaeva Sh T 1995Russ.J.Appl.Chem.68461[17]Goia C,Matijevi´c E and Goia D V 2005J.Mater.Res.201507[18]Cai W and Wan J 2007J.Colloid Interface Sci.305366[19]Liu Z J,Zhao B,Zhang Z T and Hu L M 1996Chin.Chem.Bull.1055[20]Xuan Y and Li Q 2000Int.J.Heat Fluid Flow 2158。

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