Simulations on the electromechanical poling of ferroelectric ceramics

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罗姆公司2022年产品用户指南:自动汽车应用Nano Cap 低噪声与输入 输出电压范围高速CMOS

罗姆公司2022年产品用户指南:自动汽车应用Nano Cap 低噪声与输入 输出电压范围高速CMOS

User’s Guide ROHM Solution SimulatorNano Cap™, Low Noise & Input/Output Rail-to-Rail High Speed CMOS Operational Amplifier for Automotive BD7281YG-C – Voltage Follower– Frequency Response simulationThis circuit simulates the frequency response with Op-Amp as a voltage follower. You can observe the AC gain and phase of the ratio of output to input voltage when the input source voltage AC frequency is changed. You can customize the parameters of the components shown in blue, such as VSOURCE, or peripheral components, and simulate the voltage follower with the desired operating condition.You can simulate the circuit in the published application note: Operational amplifier, Comparator (Tutorial). [JP] [EN] [CN] [KR] General CautionsCaution 1: The values from the simulation results are not guaranteed. Please use these results as a guide for your design.Caution 2: These model characteristics are specifically at Ta=25°C. Thus, the simulation result with temperature variances may significantly differ from the result with the one done at actual application board (actual measurement).Caution 3: Please refer to the Application note of Op-Amps for details of the technical information.Caution 4: The characteristics may change depending on the actual board design and ROHM strongly recommend to double check those characteristics with actual board where the chips will be mounted on.1 Simulation SchematicFigure 1. Simulation Schematic2 How to simulateThe simulation settings, such as parameter sweep or convergence options,are configurable from the ‘Simulation Settings’ shown in Figure 2, and Table1 shows the default setup of the simulation.In case of simulation convergence issue, you can change advancedoptions to solve. The temperature is set to 27 °C in the default statement in‘Manual Options’. You can modify it.Figure 2. Simulation Settings and execution Table 1.Simulation settings default setupParameters Default NoteSimulation Type Frequency-Domain Do not change Simulation TypeStart Frequency 10 Hz Simulate the frequency response for thefrequency range from 10 Hz to 100 MHz.End Frequency 100Meg HzAdvanced options More Accuracy - Time Resolution Enhancement Convergence Assist-Manual Options .temp 27 - SimulationSettingsSimulate3 Simulation Conditions4 Op-Amp modelTable 3 shows the model pin function implemented. Note that the Op-Amp model is the behavior model for its input/output characteristics, and no protection circuits or the functions not related to the purpose are not implemented.5 Peripheral Components5.1 Bill of MaterialTable 4 shows the list of components used in the simulation schematic. Each of the capacitors has the parameters of equivalent circuit shown below. The default values of equivalent components are set to zero except for the ESR ofC. You can modify the values of each component.Table 4. List of capacitors used in the simulation circuitType Instance Name Default Value Variable RangeUnits Min MaxResistor R1_1 0 0 10 kΩRL1 10k 1k 1M, NC ΩCapacitor C1_1 0.1 0.1 22 pF CL1 25 free, NC pF5.2 Capacitor Equivalent Circuits(a) Property editor (b) Equivalent circuitFigure 3. Capacitor property editor and equivalent circuitThe default value of ESR is 0.01 Ω.(Note 2) These parameters can take any positive value or zero in simulation but it does not guarantee the operation of the IC in any condition. Refer to the datasheet to determine adequate value of parameters.6 Recommended Products6.1 Op-AmpBD7281YG-C : Nano Cap™, Low Noise & Input/Output Rail-to-Rail High Speed CMOS Operational Amplifier for Automotive. [JP] [EN] [CN] [KR] [TW] [DE]TLR4377YFV-C : Automotive High Precision & Input/Output Rail-to-Rail CMOS Operational Amplifier (QuadOp-Amp). [JP] [EN] [CN] [KR] [TW] [DE]TLR2377YFVM-C : Automotive High Precision & Input/Output Rail-to-Rail CMOS Operational Amplifier (DualOp-Amp). [JP] [EN] [CN] [KR] [TW] [DE]TLR377YG-C : Automotive High Precision & Input/Output Rail-to-Rail CMOS Operational Amplifier. [JP] [EN] [CN] [KR] [TW] [DE]LMR1802G-LB : Low Noise, Low Input Offset Voltage CMOS Operational Amplifier. [JP] [EN] [CN] [KR] [TW] [DE] Technical Articles and Tools can be found in the Design Resources on the product web page.NoticeROHM Customer Support System/contact/Thank you for your accessing to ROHM product informations.More detail product informations and catalogs are available, please contact us.N o t e sThe information contained herein is subject to change without notice.Before you use our Products, please contact our sales representative and verify the latest specifica-tions :Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to various factors.Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.Examples of application circuits, circuit constants and any other information contained herein areprovided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.The technical information specified herein is intended only to show the typical functions of andexamples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.The Products specified in this document are not designed to be radiation tolerant.For use of our Products in applications requiring a high degree of reliability (as exemplifiedbelow), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems.Do not use our Products in applications requiring extremely high reliability, such as aerospaceequipment, nuclear power control systems, and submarine repeaters.ROHM shall have no responsibility for any damages or injury arising from non-compliance withthe recommended usage conditions and specifications contained herein.ROHM has used reasonable care to ensur e the accuracy of the information contained in thisdocument. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.Please use the Products in accordance with any applicable environmental laws and regulations,such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.W hen providing our Products and technologies contained in this document to other countries,you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.This document, in part or in whole, may not be reprinted or reproduced without prior consent ofROHM.1) 2)3)4)5)6)7)8)9)10)11)12)13)。

论文中的simulation和emulation

论文中的simulation和emulation

论⽂中的simulation和emulation如题,作为⼀名学术研究者,关于simulation和emulation是有必要分清楚的。

先给出⼀些⽹上的参考定义:解释⼀:模拟(Simulation)即选取⼀个物理的或抽象的系统的某些⾏为特征,⽤另⼀系统来表⽰它们的过程。

模拟技术的⾼级阶段称为仿真模拟(Emulation)、系统仿真,即⽤⼀数据处理系统来全部或部分地模拟某⼀数据处理系统,以致于模仿的系统能想被模仿的系统⼀样接受同样的数据、执⾏同样的程序、获得同样的结果。

解释⼆:模拟(Emulation)是试图模仿⼀个设备的内部设计;仿真(Simulation)是试图模仿⼀个设备的功能。

解释三: Emulation:When one system performs in exactly the same way as another, though perhaps not at the same speed. A typical example would be emulation of one computer by ( a program running on) another. You migh use emulation as a replacement for a system whereas you would use a simulation if you just wanted to analyse it and make predictions about it. Simulation: Attempting to predict aspects of the behaviour of some system by creating an approximate (mathematical) model of it. This can be done by physical modelling, by writing a special-purpose computer program or using a more general simulation package, probably still aimed at a particular kind of simulation (e.g. structural engineering, fluid flow). Typical examples are aricraft flight simulators or electronic circuit simulators. A great many simulation languages exist, e.g. {Simula}总结下来就是simulation是模拟,emulation是仿真。

simulation modelling practice -回复

simulation modelling practice -回复

simulation modelling practice -回复Simulation Modelling Practice: A Step-by-Step GuideIntroduction:Simulation modelling is a valuable technique used to mimicreal-life systems and analyze their behavior. By creating virtual representations of complex systems, simulation modelling allows us to understand how different variables and factors interact and impact the overall system performance. In this article, we will provide a step-by-step guide on how to develop and execute a simulation model, ensuring accurate results and valuable insights.Step 1: Define the Scope and ObjectivesThe first and most crucial step in simulation modelling is to clearly define the scope and objectives of the study. This involves understanding the problem at hand, identifying the variables to be considered, and determining the specific goals to be achieved. For instance, if you are simulating a supply chain network, clarify whether you aim to optimize inventory levels, reduce lead time, or minimize costs.Step 2: Gather DataSimulating a system requires accurate and comprehensive data. Collecting data from reliable sources is essential to ensure the validity and reliability of the simulation model. This could include historical data, market trends, customer demand data, and any other relevant information. Data can be obtained through surveys, interviews, observations, or existing databases.Step 3: Develop the Conceptual ModelOnce the data is gathered, the next step is to develop the conceptual model. This involves identifying the components, relationships, and behaviors of the system to be simulated. Conceptual models can be represented using flowcharts, diagrams, or mathematical equations, depending on the complexity of the system.Step 4: Convert the Conceptual Model into a Computer ModelIn this step, the conceptual model is translated into a computer model using specialized simulation software. Multiple software options are available, such as AnyLogic, Simul8, or Arena. The choice of software depends on factors like complexity, desired output, and personal preference. The computer model includes allthe variables, parameters, and rules defined in the conceptual model.Step 5: Validate the ModelModel validation is crucial for ensuring the accuracy and reliability of simulation results. This involves comparing the model's output to real-life data or expert opinions. Validation can be done by running the simulation model on past data and evaluating how well it replicates the actual outcomes. If the model does not produce results that align with reality, adjustments are made until satisfactory validation is achieved.Step 6: Design Experiments and Run SimulationsBefore running simulations, it is important to design experiments that address the objectives defined in Step 1. Experiment design includes specifying the values for each variable, defining replication and randomization strategies, and determining the desired performance measures to be analyzed. Once the experiments are designed, simulations are executed using the computer model, and data is collected for subsequent analysis.Step 7: Analyze ResultsSimulation outputs provide valuable insights into system behavior. This step involves analyzing the simulation results to gain a deeper understanding of the system's performance. Statistical techniques like regression analysis, variance analysis, or Monte Carlo simulation can be used to explore the relationship between variables, identify performance bottlenecks, and optimize system performance.Step 8: Implement ImprovementsBased on the insights gained from the simulation analysis, improvements can be implemented to optimize the system. These improvements could involve adjusting parameters, redesigning processes, or reallocating resources. By simulating the effects of these changes, decision-makers can evaluate their impact on system performance and make informed decisions.Step 9: Communicate FindingsThe final step involves effectively communicating the findings and recommendations derived from the simulation study. Visualizations, such as charts, graphs, or interactive dashboards, can be used to present the results in a clear and concise format. This helps stakeholders understand the implications of the analysis andsupports informed decision-making.Conclusion:Simulation modelling is a powerful tool that allows us to study and optimize complex systems. By following the step-by-step guide outlined in this article, practitioners can develop reliable and insightful simulation models. Remember to define the scope and objectives, gather accurate data, design a conceptual model, convert it into a computer model, validate the model's outputs, run simulations, analyze the results, implement improvements, and effectively communicate the findings. By systematically going through these steps, you can unlock the potential of simulation modelling to tackle complex problems and drive informed decision-making.。

气压控制系统 3230-0008 气压控制系统 使用手册说明书

气压控制系统 3230-0008 气压控制系统 使用手册说明书

Electro-Pneumatic Module 1: Introduction to Electro-pneumaticsPREPARED BYAcademic ServicesAugust 2012ATM-414 – Electro-Pneumatics2 Module 1: Introduction to electro-pneumaticsModule 1: Introduction to Electro-pneumaticsModule ObjectivesAfter the completion of this module, the student will be able to:1- Explain all safety precaution when working with electro-pneumatics. 2- Explain the concept of signal flowing in electro-pneumatics.3- Identify the advantages and disadvantages of the elector-pneumatics.Module ContentsSr Topic Page No.1 Introduction to electro-pneumatics 32 Signal flow in electro-pneumatics4 3 Advantages of electro-pneumatic systems5 4Components of electro-pneumatic system6 5 Safety and operation 12 6 Practical task 1 137 Practical task 2 178 Practical task 3 189 References 24ATM-414 – Pneumatic systemsModule 1: Introduction to electro-pneumatics 31 Introduction to electro-pneumaticsElectro-pneumatic is widely used in many areas of industrial automation. Production, assembly, and packaging systems worldwide. These systems are driven by electro-pneumatic control systems. Fig.1.1 (a) and Fig1.1 (b) show different applications of electro-pneumatic machines.In electro-pneumatics, the pneumatic components are controlled by using electrical and electronic circuits. Electronic and electromagnetic sensors, electrical switches and industrial computersare used to replace the manual control of a pneumatic system.(a)(b)Fig.1.1(a): Milk filling machine (b): Yogurt filling machineATM-414 – Electro-Pneumatics 4 Module 1: Introduction to electro-pneumatics` 2 Signal flow in electro-pneumatic control systemThe signal flow diagram of Fig. 1.2 illustrates the signal flow within an electro-pneumatic system.1. Signal input: This signal is usually generated from sensor or switch.2. Signal processing: the signal is processed in the processing station suchas OR gate, AND gate or time delay valve.3. Signal output: the signal forms as a link between the signal controlsection and the power section4. Command execution: it takes place at high power level either for: ∙ High speed-fast ejection of product. ∙Apply high force as in power presses.Fig. 1.2: Signal flow and components of an electro-pneumatic control systemATM-414 – Pneumatic systems3 Advantages of electro-pneumatic systems:Below are some advantages of electro-pneumatic systems1.Greater reliability.Less moving parts subjected to wear compared to mechanical control systems.2.Reduced installation complexity.Less components and hoses, leads to less effort in planning and commissioning especially with large and complex systems.3.The control system can be easily modified and adapted.It is easier to change wiring and modify programs rather than changing mechanical components and hose networks.Example: the AND gate is replaced with logic and through using electrical switches.4.Easy handling.Less complexity5.Secure mounting.Fewer hoses6.Environmentally-friendly coupling system.Less lubrication require4 Components of electro-pneumatic systemThe electro pneumatic system is normally consists of the following items:1.DC power supply.2.Switches.3.Relays.4.Solenoid valves.5.Sensor.Module 1: Introduction to electro-pneumatics 5ATM-414 – Electro-Pneumatics 6 Module 1: Introduction to electro-pneumatics4.1 DC Power SupplyThe power supply is used to reduce and convert the 230 V AC to a 24 V DC(inside ATHS laboratories) as shown in Fig.1.3Figure 1.3 power supplyThe power supply components which are shown in Fig. 1.4 have the following functions:∙ The transformer reduces the main voltage (230 to 24 volt). ∙ The rectifier converts the AC voltage to DC voltage.∙ The stabilizer is used to smooth and maintain constant voltage at theoutputFig.1.4 electric diagram of the power supplyThe following criteria play commonly an important role is selecting the power supply:∙ The magnitude of voltage and current it can supply.∙How stable its output voltage or current is under varying load conditions.∙Whether it provides continuous or pulsed energy.ATM-414 – Pneumatic systemsModule 1: Introduction to electro-pneumatics74.2 SwitchesSwitches are installed in an electric circuit to connect or interrupt the electric current.These switches are divided into:1- Control switches: keep the selected position such as detent switches. Push button switches: maintain the selected position as long as the switch is activated.In this module, three types of switches will be discussed: a. Push button switches. b. Detent switches. c. Limit switches. (a)Push button switchesThese switches are activated manually and used connect or disconnect the electric current in he control circuit. There are three typed of the push button switches:1- Normally open contact (make)In the case of a normally open switch Fig.1.5.a, the circuit is open if the switch is in its initial positionPressing the pushbutton results in closing the circuit and then the current will flow to load. When the plunger is released the spring will returns the switch to it initial position.(a)(b)ATM-414 – Electro-Pneumatics8 Module 1: Introduction to electro-pneumatics2 Normally close contact (break)In the case of the normally closed switch Fig. 1.5.c, the circuit is closed when the switch is in itsinitial position. The circuit is interrupted by pressing the pushbutton. Fig.1.5.d shows the ISO symbol of the push button N/C. 3 Changeover contact (two-way)The change over contact Fig. 1.9-c combines the function of the normally open and normally closed. Changeover contacts are used to close one circuit and open another circuit in one switching operation.In the (ATHS) labs, these types of switches are combined in one switch block as illustrated in figure 1.5.g.(c) (d)(e)(f)(g)Fig.1.5:(a): push button switch (N/O) (b): ISO symbol of the normally open push button switch (c): push button switch (N/C) (d): ISO symbol of the normally closed push button switch(e): changeover switch (two way) (f): ISO symbol of the changeover switch(g): Switch block14ATM-414 – Pneumatic systemsModule 1: Introduction to electro-pneumatics9 b Detent switchesThese switches keep the selected position; the switch position remains unchanged until a new switch position is selected. It is called detent switch or a latching switch. Fig.1.6.a and Fig.1.6.b show the ISO symbol of the normally open detent switch and normally closed detent switch respectively.Detent switches also designed to be as normally open, normally closed or changeover switches.In the (ATHS) labs, the detent switches are included in the same switch block with pushbutton switches, as shown in Fig. 1.6.cc Limit switchesThe limit switch (Fig.1.7.a) is actuated when a machine part or a work-piece isin a certain position. Normally, actuation is affected by a cam orcylinder piston.Limit switches are normally changeover(a)(b)(c)Fig. 1.6:(a): ISO symbol of normally open detent switch(b): ISO symbol of normally closed detent switch (c):Switch block(a) (b)ATM-414 – Electro-Pneumatics10 Module 1: Introduction to electro-pneumaticscontacts and can be connected according to the required control circuit. The limit switch can be used in circuit according to one of the following:Normally open switch Normally closed switch Changeover switch.Fig. 1.7(a): internal construction of the limit switch(b): ISO symbol of the limit switch(c): picture of the limit switch4.3RelaysA relay is defined as anelectromagnetically actuated switch. When the voltage is applied to a solenoid coil terminals (A1, A2) in Fig.1.14, it will become an electromagnet which in turn attracts the contacts of the relay either closingor opening them.The spring returns the contacts to the initial position immediately after disconnecting the voltage at the coil terminals.An ISO symbol of the relay and a lab relay block is also illustrated in the same figure.Some advantages of a relay that:∙It can be used to switch one or more contacts.∙To switch a high current circuit witha low current circuit.(a)(b)(c)Fig. 1.8:(a): Internal structure(b): ISO symbol of the relay(c): Relay block5. Safety and operationThe following points should be observed while working with electro-pneumatic systems:1. Pressurized air lines thatbecome detached can cause accidents. Switch off pressure immediately.2. First connect all tubing andsecure before switching on the compressed air.3. Cylinders may advance orretract as soon as thecompressed air is switched on.4. Do not operate the electricallimit switch manually during fault finding (use a tools only).5. Limit switches should be fixedin such a way that they contact the trip cam of the cylinder only in the determined direction.6. Do not exceed the permissible working pressure.7. Use only low voltages of ≤ 24 V.8. Switch off the air and voltage supply before disconnecting thecircuit.6.Practical Task 1Title:Controlling an electric bulb lighting using different types of switches Objectives:∙Understanding and using the DC power supply.∙The student should be able to use of the pushbutton switches (NO and NC).∙The student should be able to use of detent switches (NO and NC).∙The student should be able to use of changeover switch.∙The student should be able to construct the circuit using the FluidSim softwareBackground:The student should know how to use the Pushbutton, detent and changeover switches that will be used to switch on/off a lamp using different circuit configurations.Required components:1-DC power supply (Fig.1.9.a)2-Indicator unit (Fig.1.9.b)3-Switch block (Fig.1.9 c) 4-Limit switch (Fig1.7 c)(a)(b)(c)Fig. 1.9:(a): Dc power supply(b): Indicator block(c): Switch blockProcedures:1.Prepare the components according tothe components list.2.From the switch block, use apushbutton switch to connect the firsttwo circuits as in Fig.1.10.a∙Pushbutton switch, normally open.Press the switch on/off and explainwhat happens to the lamp.………………………………………………………………………………………………………………………………………………………………………………………∙Pushbutton, Normally closed switch.Press the switch on/off and explainwhat happens to lamp.…………………………………………………………………………………………………………………………………………………………………………………….. 3.From the switch block, use a detentswitch to connect the second two circuits as in Fig.1.10.b∙Detent switch, normally open. Press the switch and note what happens tothe lamp.………………………………………………………………………………………………………………………………………………………………………………………N.O NC(a)N.O N.C.(b)Detent switch normally closed. Press the switch and note what happens to the lamp.……………………………………………………………………………………………………………………………………………………………………………………..4. Use a limit switch (as a changeover switch) to connect the circuit as in Fig.1.10.cPress the switch and see how the switch is used to control two circuits at a time. Write your comments.……………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………..5. Turn the power off.6. Dismantle and tidy up.(c)Fig. 1.10:(a): Push button switch (b): Detent switch (c): Changeover switchConclusion............................................................................................................ ............................................................................................................ ............................................................................................................ ............................................................................................................ ...........................................................................................................7. Practical Task 2 Title:Indirect control of a lamp using a pushbutton switch and a relay. Objectives:∙ Introduce the students to the use of lab equipment.∙ Introduce the students to the use of DC power supply.∙ Introduce the students to the use of the pushbutton switches (NO and NC).∙ Introduce the students to the use of the relay and the associated contacts (NO and NC). Background:The relay is an electromagnetically operated switch; it will be used to indirectly control a 24V lamp through a pushbutton switch. Required Components: 5- DC power supply 6- Indicator unit 7- Switch block 8- Relay blockRelay blockProcedures:1.Connect the circuit according to circuitshown in Fig.1.11.a, so the relay is a normally open.2.Switch on /off the pushbutton switchand observe the lamp and also the LEDof the relay block. Explain what happens to the lamp? …………………………………………………………………………………………………………………………………………………………………………………………………..……3.Replace the pushbutton switch with adetent switch and repeat the same steps. Explain what happens to lamp.………………………………………………………………………………………………………………………………………………………………………………………………4.Connect the circuit according to circuitshown in Fig.1.11.b, so the relay is in a normally close mode.5.Switch on/off the pushbutton switchand observe the lamp and the LED of the relay block. Explain what happens to lamp.……………………………………………………………..………………………………………………………………………………………………………………………………(a)(b)Fig. 1.11:(a): Relay-Normally open(b): Relay-Normally closed42+24V6.Turn off the power7.Dismantle and tidy up.Conclusion ............................................................................................................ ............................................................................................................ ............................................................................................................ ............................................................................................................ ............................................................................................................8.P ractical Task 3:Title: Opening/closing the flow in a pipelineThe double acting cylinder (1A) in Fig. 1.12 is used to open and close the main valve in a pipeline. Draw an electro-pneumatic circuit to control the movement of cylinder (1A).Hint: The valve is opened by pressing the pushbutton switch. When the pushbutton is released the valve is closed.Fig. 1.12Procedures:1.Draw the elector-pneumatic circuit using the FluidSim software2.Test the circuit functions against any errors or mistakes.3.Construct the circuit on the workstation4.Write down your notes and observations.Pneumatic circuit Electric circuitObservations ............................................................................................................ ............................................................................................................ ............................................................................................................ ............................................................................................................Student’s notes ............................................................................................................ ............................................................................................................ 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............................................................................................................ ............................................................................................................Class work three electrical components that will be used in the lab.………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………2.What is the function of a D.C. power supply?………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………3.What are the main components of the D.C. power supply?………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………4.List the main types of switches in terms of function.………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………5.Explain the difference between a push button switch and a detent switch.………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………6.Explain the difference between a pushbutton normally open switch and apushbutton normally closed switch.………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………7.Draw the ISO symbol of the following components:a- Detent pushbutton switch, N/C and N/ON/C N/O b- Changeover switchc-RelayHome WorkThe circuit below illustrates a relay controlling three lamps indirectly, answer the following questions:1.What is the type of switch S1?………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………2.How many relays are there in the circuit?……………………………………………………………………………………………………………………………………………………………………………………………………………………………………………..3.What is the meaning of the symbols below circuit 1 and circuit 4?……………………………………………………………………………………………………………………………………………………………………………………………………………………………………………..4.Explain what happens when switch S1 is activated.………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………………9.References1.Electro-pneumatic text book TP 201 2005 – Festo2.Electro-pneumatic work book TP201 2005 – Festo3.Electro-pneumatic work book TP202 advanced level – Festo。

MEIU TM MPRT EPOCH 接口单元说明书

MEIU TM MPRT EPOCH 接口单元说明书

MEIUTMMPRT EPOCH Interface UnitIInterconnects MPRT to Multi-Amp EPOCH-II or EPOCH-20 unit.IMPRT Touch View Interface providesmanual control of the EPOCH-II/20 output.I Automated control via AVTS software.IHigh Power EPOCH-II/20 units provide capability to test panel of relays or high burden electromechanical ground overcurrent relays at high multiples of tap.IEPOCH-II/20 can be used to performtransient DFR playback, when high test currents / VA are required.MEIUTMMPRT EPOCH Interface UnitDESCRIPTIONThe MEIU is a small, light-weight, field portable, interface unit specifically designed to control Multi-Amp EPOCH-II ®and EPOCH-20®units with the Megger MPRT relay test system. It adds high-current, high volt-ampere output capability to the MPRT relay testing capability.APPLICATIONSThe combination of the MPRT and the EPOCH-II/20 units provides a very powerful test capability. A singleEPOCH-II/20 unit can provide a maximum of 170 Amperes for simulating single phase to ground faults. With a three channel MPRT unit, the MEIU can interface and control up to three EPOCH-II/20 units either manually from the MPRT Touch View Interface or through the AVTS software. With three EPOCH-II/20 units, three-phase faultsimulations of up to 170 amperes per phase are possible.The combination of a three channel MPRT, the MEIU and three EPOCH-II/20 units can provide 6 currents for testing three-phase current differential protection schemes at higher than normal restraint and operating test currents.Testing a whole panel of relays at one time has become a very popular time saving test technique, requiring both high current and high power. Electromechanical relays present a very high burden requiring a high compliance voltage in order to test a panel of relays. For example, the EPOCH-II can provide up to 170 amperes at 1,000 VA for 3 minutes. The smaller EPOCH-20 can provide up to 170 amperes at 600 VA for 3 minutes. At the same time a three channel MPRT can provide three currents up to 30 amperes at 200 VA each, or three phase voltage up to 300 volts at 150 VA each.FEATURES AND BENEFITSInterface MPRT to Multi-Amp Models EPOCH-II or EPOCH-20 High Current/ VA Amplifiers –Use MPRT to control the EPOCH units when test requirements demand high test current and output power.Control up to 3 EPOCH-II/20 units with one MEIU and MPRT unit – Using a three channel MPRT unit and the Touch View Interface, the operator can manually control up to 3 EPOCH-II/20 units, as well as the three MPRT current channels. This feature allows for special test applications such as testing multi-terminal current differential relays with 6 currents.1981MEIU TM MPRT EPOCH Interface UnitSPECIFICATIONSMEIU Input Port21 pin D-connector connects the MEIU to the MPRT EPOCH interface connector.MEIU Output PortsThree (3) each 15 pin D-connectors connect the MEIU to the EPOCH-20 units, or the to the EPOCH-II units.Temperature RangeOperating:32 to 122°F (0 to 50°C)Storage:-13 to 158°F (-25 to 70°C)Relative Humidity90% RH, Non-condensingDimensions6.0 W x 1.75 H x 6.375 D in.152.4 W x 44.45 H x 161.9 D mmWeight0.80 lbs. (0.36 kg)EnclosureThe unit comes mounted in a rugged enclosure for field portability. A padded soft-sided carry case is provided.The following are abbreviated specifications for the EPOCH-II and EPOCH-20 High Current Units. For complete specifications of these units refer to the EPOCH-II or EPOCH-20 bulletins. EPOCH Output Ranges and PowerThe EPOCH-II and EPOCH-20 units have six output taps providing currents up to 170 Amperes rms. The maximum compliance voltage depends on which output tap and range is in use. EPOCH-20 OutputHigh Range:Low Range:600 VA rms300 VA rms Output Current Output Volts Output Volts10.00 Amps 60 Volts30 Volts15.00 Amps40 Volts20 Volts40.00 Amps15 Volts7.5 Volts50.00 Amps12 Volts 6 Volts100.0 Amps 6 Volts 3 Volts170.0 Amps 3.5 Volts 1.75 Volts EPOCH-II OutputHigh Range:Low Range:1,000 VA rms500 VA rms Output Current Output Volts Output Volts10.00 Amps 100 Volts50 Volts15.00 Amps66.6 Volts 33.3 Volts40.00 Amps25 Volts 12.5 Volts50.00 Amps20 Volts10 Volts100.0 Amps10 Volts 5 Volts170.0 Amps 5.9 Volts 2.95 VoltsDuty CycleThree minutes full rated output, fifteen minutes recovery time. EPOCH-II/20 Output FrequencyThe MPRT and interface unit provides a variable output frequency signal to the EPOCH units. Output frequency is continuously displayed on the Touch View Interface display screen, when in the Manual mode of operation. The output frequency can be varied manually using the MPRT Touch View Interface with the following ranges:5.000 to 99.999100.00 to 999.99Frequency Accuracy±25 ppm at 23°C ±5°CAmplitude AccuracyAt 23°C ±5°C, 50/60 Hz, typical accuracy is ±0.5 % of setting, throughout range of load, from 10 to 100 % of range, and range of input voltage. Accuracy ±1 % of setting maximum from0°to 50°C.Phase AngleRange:0 to 359.9 degreesResolution:0.1 degreeAccuracy:±0.2°typical, ±0.5°maximum at 50 or 60 Hz,full-scale output current.UKArchcliffe Road, Dover CT17 9EN EnglandT (0) 1 304 502101F (0) 1 304 207342UNITED STATES4271 Bronze WayDallas, TX 75237-1019 USAT 1 800 723 2861T 1 214 333 3201F 1 214 331 7399OTHER TECHNICAL SALES OFFICESNorristown USA, Toronto CANADA,Mumbai INDIA, Trappes FRANCE,Sydney AUSTRALIA,Madrid SPAIN andThe Kingdom of BAHRAIN.ISO STATEMENTRegistered to ISO 9001:2000 Reg no. Q 09250Registered to ISO 14001 Reg no. EMS 61597MEIU_DS_en_V01Megger is a registered trademark。

ansys模拟

ansys模拟

ቤተ መጻሕፍቲ ባይዱbstract
iii
Abstract
The present work investigates the potential of the finite element method (FEM) in the design process of magnetic Micro-Electro-Mechanical-Systems (MEMS). The magnetic forces and torques acting on a magnetic body are of great importance in wireless actuating principles. Good models are required to allow for precise and predictable motion of the magnetic body. However, analytical results are only available for simple geometries and experiments are often time consuming and may have a certain number of uncertain parameters that may influence the results. Numerical methods, and in particular the finite element method, offer the possibility to study a magnetic body with known material properties in a well defined environment. Consequently, in this work, a method is proposed to calculate the net body torque on arbitrarily shaped bodies in a homogeneous magnetic field using the commercial finite element software Ansys . In addition, a procedure to determine the demagnetization factors of these bodies is given. The code is first validated by the known analytical results for an ellipsoid. As an application, the demagnetization factors, as well as the net magnetic torque on brick shaped bodies and the IRIS Microrobot are calculated. A method is proposed to predict the torque acting on the Microrobot analytically. However, experimental results are necessary to confirm this method. Furthermore, Ansys is used to model magneto-structural coupling that is, the motion and deformation of a magnetic body due to an external magnetic field. Two devices are presented (as case studies rather than as actual design concepts), the magnetic resonator and the magnetic scratch drive actuator (MSDA). A quasianalytical model for the static deflection of the magnetic resonator is given and good agreement with the finite element model is obtained. The MSDA is modeled to show the potential of Ansys in modeling MEMS devices, as additional to the coupling effects, contact elements and spring elements are introduced. Again, experimental results are required.

simulation modelling practice

simulation modelling practice

simulation modelling practiceSimulation modelling is a crucial tool in the field of science and engineering. It allows us to investigate complex systems and predict their behaviour in response to various inputs and conditions. This article will guide you through the process of simulation modelling, from its basicprinciples to practical applications.1. Introduction to Simulation ModellingSimulation modelling is the process of representing real-world systems using mathematical models. These models allow us to investigate systems that are too complex or expensiveto be fully studied using traditional methods. Simulation models are created using mathematical equations, functions, and algorithms that represent the interactions and relationships between the system's components.2. Building a Basic Simulation ModelTo begin, you will need to identify the key elements that make up your system and define their interactions. Next, you will need to create mathematical equations that represent these interactions. These equations should be as simple as possible while still capturing the essential aspects of the system's behaviour.Once you have your equations, you can use simulation software to create a model. Popular simulation softwareincludes MATLAB, Simulink, and Arena. These software packages allow you to input your equations and see how the system will respond to different inputs and conditions.3. Choosing a Simulation Software PackageWhen choosing a simulation software package, consider your specific needs and resources. Each package has its own strengths and limitations, so it's important to select one that best fits your project. Some packages are more suitable for simulating large-scale systems, while others may bebetter for quickly prototyping small-scale systems.4. Practical Applications of Simulation ModellingSimulation modelling is used in a wide range of fields, including engineering, finance, healthcare, and more. Here are some practical applications:* Engineering: Simulation modelling is commonly used in the automotive, aerospace, and manufacturing industries to design and test systems such as engines, vehicles, and manufacturing processes.* Finance: Simulation modelling is used by financial institutions to assess the impact of market conditions on investment portfolios and interest rates.* Healthcare: Simulation modelling is used to plan and manage healthcare resources, predict disease trends, and evaluate the effectiveness of treatment methods.* Education: Simulation modelling is an excellent toolfor teaching students about complex systems and how they interact with each other. It helps students develop critical thinking skills and problem-solving techniques.5. Case Studies and ExamplesTo illustrate the practical use of simulation modelling, we will take a look at two case studies: an aircraft engine simulation and a healthcare resource management simulation.Aircraft Engine Simulation: In this scenario, a simulation model is used to assess the performance ofdifferent engine designs under various flight conditions. The model helps engineers identify design flaws and improve efficiency.Healthcare Resource Management Simulation: This simulation model helps healthcare providers plan their resources based on anticipated patient demand. The model can also be used to evaluate different treatment methods and identify optimal resource allocation strategies.6. ConclusionSimulation modelling is a powerful tool that allows us to investigate complex systems and make informed decisions about how to best manage them. By following these steps, you can create your own simulation models and apply them to real-world problems. Remember, it's always important to keep anopen mind and be willing to adapt your approach based on the specific needs of your project.。

simulation parameters and results

simulation parameters and results

simulation parameters and resultsSimulation Parameters and ResultsIntroduction:Simulation is a powerful tool used in various fields to model and analyze complex systems. It allows researchers, engineers, and analysts to understand the behavior of a system under different conditions, without the need for physical prototyping. In this paper, we will discuss the simulation parameters and results obtained in a study that aimed to analyze the performance of a new vehicle suspension system under different road conditions.Simulation Parameters:The simulation was performed using a popular software package, which provides a comprehensive set of tools for simulating the dynamics of mechanical systems. The vehicle suspension system was modeled as a multi-body system, consisting of a chassis, four wheels, and suspension components such as springs and dampers. The parameters used in the simulation included:1. Vehicle Specifications: The vehicle was modeled based on a standard sedan, with specifications such as mass, dimensions, and center of gravity height.2. Suspension Geometry: The suspension geometry, including the length and angles of various suspension components, was defined according to the specifications of the new suspension system.3. Spring Stiffness: The stiffness of the springs used in the suspension system was an important parameter in determining thevehicle's ride comfort and handling characteristics. Different spring stiffness values were tested to evaluate their effects on the system's performance.4. Damper Characteristics: The dampers, also known as shock absorbers, play a crucial role in controlling the motion of the suspension system. The simulation considered different damping characteristics to study their impact on the system's response.5. Road Profiles: Various road profiles, including smooth, rough, and uneven surfaces, were simulated to evaluate the system's performance under different road conditions. These road profiles were based on real-world data obtained from road surveys. Simulation Results:The simulation results provided valuable insights into the performance of the new suspension system. Some of the key findings are discussed below:1. Ride Quality: The simulation allowed us to quantify the ride quality of the vehicle under different road conditions. It was found that the new suspension system provided a significantly smoother ride compared to the traditional suspension design. The analysis of acceleration, displacement, and velocity responses confirmed the improved ride comfort.2. Handling and Stability: The simulation also assessed the handling and stability characteristics of the vehicle. It was observed that the new suspension system improved the overall stability and control of the vehicle, especially during high-speedmaneuvers and cornering. The roll and pitch angles, as well as lateral forces, were analyzed to evaluate the improvements.3. Suspension Travel and Load Distribution: The simulation provided detailed information on the suspension travel and load distribution under different road conditions. It was found that the new suspension system efficiently controlled the vertical motion of the wheels, resulting in improved tire contact with the road surface. This led to better traction, reduced tire wear, and enhanced overall vehicle performance.4. Parameter Sensitivity Analysis: Sensitivity analysis was performed to evaluate the effects of different suspension parameters on the system's performance. It was observed that changes in spring stiffness and damping characteristics had a significant impact on ride comfort and handling, highlighting the need for careful tuning and optimization of these parameters. Conclusion:In conclusion, the simulation study provided valuable insights into the performance of the new vehicle suspension system. It demonstrated the improved ride quality, handling, and stability characteristics compared to the traditional suspension design. The simulation results also highlighted the importance of choosing appropriate suspension parameters and performing sensitivity analysis to optimize the system's performance. The findings of this study can guide engineers and designers in the development and improvement of vehicle suspension systems to enhance ride comfort, safety, and overall performance.。

火焰战争

火焰战争

火焰战争作者:马克·德里所谓,是计算机行业的行话,指的是尖刻辛辣的在线交锋。

它常常是公开进行,出现在电子发布栏里围绕主题而形成的群体讨论中,也有通过将毒辣的信件寄给私人信箱的,但这种情况较少些。

约翰·A.巴利将“flame”定义为“通常是以电子为媒体的谩骂”,这就意味着这种交锋有时是在不在线的情况下发生的,尽管电脑网上的很大一部分东西被公认为是些无聊货,因此很可能更喜欢实际的痛骂与抨击,而不喜欢在线的面对面的舌战。

1 再者,电子媒体交流所具有的幽灵般的性质——在这里,血肉之躯成了言语,发送者的躯体以信件形式飘荡在终端显示器上——加速了怒火中烧时那股敌意的升级;游魂也似的,匿名的战斗者往往感到他们可以将人侮辱一番而不受惩罚。

而且,信件似乎鼓励误解,就像手写函件的情况一样。

一如“蜗牛信件”,电子信件的解释不需非言语的提示——也就是社会语言学家彼德·法布所称的超语言的帮助。

这些提示包括有表达能力的声音现象,如音高、音强、重音、节奏、音量等,它们的重要性已获得普遍的承认。

不用说,关于这一话题的书籍,成了超级商场里出纳台的主要销售品。

法布写道:超语言对精确阅读的重要性,不亚于语言本身:“说话者声称自己说的全是真话,并不等同于他说话的方式含有的关于这话的可信性的非言语确认。

”2有意思的是这两者都不存在于网上在线,或以文本为手段的交流中,这就是为什么人们在网上常会对一些善意的话发脾气的缘故,这也说明何以要聪明地用标点符号来简洁地表现面部表情。

以下是一些常用的“情感图标”的答案。

“情感图标”(emoticons)在《新黑客字典》里被定义为“用于表示情感状态的图像”? G氩嘧趴聪旅娴姆牛?BR> :—)=微笑的脸;用以强调使用者的善意。

:)或:}=上义的变体。

;—)=眨眼;用以表示带讥讽的幽默或挖苦。

:交织而成的政府试验室;主流网络如美国在线(AmericaOn-line)和计算机服务网。

The “Simulation Thing”“模拟物”

The “Simulation Thing”“模拟物”

Particle Simulations
Particle Simulations
These particles can represent different entities depending on the simulation. This could be:
atoms molecules dust particles snooker balls asteroids planets galaxies
Particle Simulations
Once a collision has been detected the system must respond to the collision. For our hockey pucks, simply reverse the velocity in the direction of the collision.
Particle Simulations
• main loop – for all particles • ‘move’ particle • if ‘collision’ with boundary – respond to collision – for all particles • for all other particles – if ‘collision’ between particles » respond to collision
Particle Simulations
Second Law: The acceleration a of a body is parallel and directly proportional to the net force F acting on the body, is in the direction of the net force, and is inversely propotional to the mass m of the body.

多层球形二次电子测量装置的栅网电子透过率仿真研究

多层球形二次电子测量装置的栅网电子透过率仿真研究

第 41 卷第 2 期航 天 器 环 境 工 程Vol. 41, No. 2 2024 年 4 月SPACECRAFT ENVIRONMENT ENGINEERING219 https:// E-mail: ***************Tel: (010)68116407, 68116408, 68116544多层球形二次电子测量装置的栅网电子透过率仿真研究刘斯盛1,陈宝华1,齐 鑫1,彭卫平2,1,杜嘉余3,马彦昭1*,张 涛1*(1. 武汉大学 动力与机械学院,武汉 430072; 2. 武汉晴川学院 机电工程学院,武汉 430204;3. 北京卫星环境工程研究所,北京 100094)摘要:精确测量材料的二次电子发射系数(SEY)对研究航天器表面材料充放电具有重要意义。

在二次电子测量装置中,栅网电子透过率是影响材料SEY测量精度的重要参数。

文章通过仿真计算对一种多层球形SEY测量装置中影响栅网电子透过率的因素进行研究,并对栅网网格参数进行优化。

结果表明:栅网偏压对栅网电子透过率的影响较小;栅网网格参数是影响栅网电子透过率的主要因素,栅网线径为0.025 mm、格线间距为1 mm时栅网电子透过率达到最大。

研究可为优化SEY测量装置设计提供参考。

关键词:二次电子测量;二次电子发射系数;栅网电子透过率;仿真计算中图分类号:O461; P354.4文献标志码:A文章编号:1673-1379(2024)02-0219-06 DOI: 10.12126/see.2023145Simulation study on electron transmittance through grid for a multi-layer spherical secondary electron measurement deviceLIU Sisheng1, CHEN Baohua1, QI Xin1, PENG Weiping2,1, DU Jiayu3, MA Yanzhao1*, ZHANG Tao1*(1. School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China;2. School of Mechanical and Electrical Engineering, Wuhan Qingchuan University, Wuhan 430204, China;3. Beijing Institute of Spacecraft Environment Engineering, Beijing 100094, China)Abstract: To accurately measure the secondary electron yield (SEY) is of great significance for studying the charge and discharge of spacecraft surface materials. The electron transmittance through grid in the secondary electron measurement device is an important factor affecting the measurement accuracy of the SEY of materials. In this paper, the causes of influencing the electron transmittance through grid in a multi-layer spherical SEY measurement device was simulated by calculation, and the geometry parameters of grid were optimized. The results show that the grid bias exhibits little effect on the electron transmittance through grid, whereas the grid geometry parameters are the main influencing factor. When the grid wire is 0.025 mm in diameter and the grid spacing is 1 mm, the electron transmittance reaches the maximum. The proposed research may provide a reference for optimizing the design of SEY measurement device.Keywords: secondary electron measurement; secondary electron yield (SEY); electron transmittance through grid; simulation calculation收稿日期:2023-09-18;修回日期:2024-03-18基金项目:中国航天科技集团应用创新计划项目(编号:6230114001);可靠性与环境工程技术重点实验室基金项目(编号:6142004210201)引用格式:刘斯盛, 陈宝华, 齐鑫, 等. 多层球形二次电子测量装置的栅网电子透过率仿真研究[J]. 航天器环境工程, 2024, 41(2): 219-224LIU S S, CHEN B H, QI X, et al. Simulation study on electron transmittance through grid for a multi-layer spherical secondary electron measurement device[J]. Spacecraft Environment Engineering, 2024, 41(2): 219-2240 引言航天器表面材料充放电可能导致设备内部电子系统中的控制、指令以及数据等分系统发生异常或故障,严重时会危及航天器的正常运行[1-4]。

电子科学与技术专业外语翻译

电子科学与技术专业外语翻译

Figure 1-1】图1-1 给出了在三种材料中一些重要材料相关的电阻值(相应电导率ρ≡1/δ)。

However】然而锗不太适合在很多方面应用因为温度适当提高后锗器件会产生高的漏电流。

For a given】对于给定的半导体,存在代表整个晶格的晶胞,通过在晶体中重复晶胞组成晶格。

This structure】这种结构也属于金刚石结构并且视为两个互相贯穿的fcc亚点阵结构,这个结构具有一个可以从其它沿立方对角线距离的四分之一处移动的子晶格(位移/4)Most of】多数Ⅲ-Ⅴ半导体化合物具有闪锌矿结构,它与金刚石有相同结构除了一个有Ⅲ族Ga原子的fcc子晶格结构和有Ⅴ族As原子的另一个。

.For example】例如,孤立氢原子的能级可由玻尔模型得出:式中m0 代表自由电子质量, q是电荷量,ε0是真空中电导率, h 是普朗克常数,n 是正整数称为主量子数。

Further decrease】空间更多减少将导致能带从不连续能级失去其特性并合并起来,产生一个简单的带。

As shown】如图1-4(a)能带图所示,有一个大带隙。

注意到所有的价带都被电子充满而导带中能级是空的As a consequence】结果,半满带的最上层电子以及价带顶部电子在获得动能(外加电场)时可以运动到与其相应的较高能级上At room】在室温和标准大气压下,带隙值硅(1.12ev )砷化镓(1.42ev)在0 K带隙研究值硅(1.17ev )砷化镓(1.52ev)Thus】于是,导带的电子密度等于把N(E)F(E)dE从导带底Ec (为简化起见设为0)积分到导带顶EtopFigure 1-5】图1-5从左到右示意地表示了本征半导体的能带图, 态密度(N(E)~E1/2), 费米分布函数, 本征半导体的载流子浓度In an extrinsi c】在非本征半导体中,一种载流子类型增加将会通过复合减少其它类型的数目;因此,两种类型载流子的数量在一定温度下保持常数For shallow】对硅和砷化镓中的浅施主,在室温下,常常有足够的热能电离所有的施主杂质,给导带提供等量的电子We shal l】我们先讨论剩余载流子注入的概念。

introductiontodevicemodelingandcircuitsimulation

introductiontodevicemodelingandcircuitsimulation

BrochureMore information from /reports/2180958/Introduction to Device Modeling and Circuit SimulationDescription: A detailed guide to SPICE–oriented design and testing of electronic devices SPICE allows engineers to simulate individual semiconductor devices and electronic circuits and to perform the large number ofdifferent analyses needed for tasks such as verification of circuit designs and prediction of circuitperformance. However, these simulations are only as good as the device models and parameters used inthe simulations. Wrong models yield unreliable results. Introduction to Device Modeling and CircuitSimulation links electronic device modeling to simulation of these devices using the SPICE program. Ideal asa reference for professional engineers or as a text for courses in semiconductor device modeling, it presents* A combination of background device physics and technology* A review of existing device models* A set of new and improved models compatible with the most advanced technology* Descriptions of device models and examples of circuit simulationsFollowing an introduction to SPICE, this book covers charge transport in semiconductors, two–terminaldevices, bipolar junction transistors, field effect transistors, and advanced FET modeling. With itsconcentration on modeling and simulation, Introduction to Device Modeling and Circuit Simulation is thecore book on SPICE–oriented semiconductor device modeling.Contents:Introduction to Spice.Charge Transport in Semiconductors.Two–Terminal Devices.Bipolar Junction Transistors.Field Effect Transistors.Advanced FET Modeling.Appendices.Index.Ordering:Order Online - /reports/2180958/Order by Fax - using the form belowOrder by Post - print the order form below and send toResearch and Markets,Guinness Centre,Taylors Lane,Dublin 8,Ireland.Fax Order FormTo place an order via fax simply print this form, fill in the information below and fax the completed form to 646-607-1907 (from USA) or +353-1-481-1716 (from Rest of World). If you have any questions please visit/contact/Order Information Please verify that the product information is correct.Product Format Please select the product format and quantity you require:* Shipping/Handling is only charged once per order.Contact InformationPlease enter all the information below in BLOCK CAPITALSProduct Name:Introduction to Device Modeling and Circuit Simulation Web Address:/reports/2180958/Office Code:SCISDU3I QuantityHard Copy (HardBack):USD 172 + USD 29 Shipping/HandlingTitle:MrMrsDrMissMsProf First Name:Last Name:Email Address: *Job Title:Organisation:Address:City:Postal / Zip Code:Country:Phone Number:Fax Number:* Please refrain from using free email accounts when ordering (e.g. Yahoo, Hotmail, AOL)Payment InformationPlease indicate the payment method you would like to use by selecting the appropriate box.Please fax this form to:(646) 607-1907 or (646) 964-6609 - From USA+353-1-481-1716 or +353-1-653-1571 - From Rest of World Pay by credit card:You will receive an email with a link to a secure webpage to enter yourcredit card details.Pay by check:Please post the check, accompanied by this form, to:Research and Markets,Guinness Center,Taylors Lane,Dublin 8,Ireland.Pay by wire transfer:Please transfer funds to:Account number833 130 83Sort code98-53-30Swift codeULSBIE2D IBAN numberIE78ULSB98533083313083Bank Address Ulster Bank,27-35 Main Street,Blackrock,Co. Dublin,Ireland.If you have a Marketing Code please enter it below:Marketing Code:Please note that by ordering from Research and Markets you are agreeing to our Terms and Conditions at /info/terms.asp。

Pattern Generation and Estimation for Power-Supply Noise Analysis

Pattern Generation and Estimation for Power-Supply Noise Analysis

Pattern Generation and Estimation for Power Supply Noise Analysis Mehrdad Nourani1,Mohammad Tehranipoor2,Nisar Ahmed31Dept.of EE,Univ.of Texas at Dallas,nourani@2Dept.of CSEE,Univ.of Maryland Baltimore County,tehrani@3Texas Instruments,n-ahmed2@A BSTRACTThis paper presents a new automatic pattern generationmethodology to stimulate the maximum power supply noise indeep submicron CMOS circuits.Our ATPG-based approachfirst generates the required patterns to cover01and10transitions on each node of internal circuitry.Then,we ap-ply a greedy heuristic tofind the worst-case(maximum)instan-taneous current and stimulate maximum switching activity in-side the circuit.The quality of these patterns were verified bySPICE simulation.Experimental results show that the patternpair generated by this approach produces a tight lower boundon the maximum power supply noise.I.I NTRODUCTIONA.MotivationPower supply noise(PSN)due to switching current has be-come an important factor for deep submicron designs.Thisnoise effect is becoming more detrimental as VLSI technol-ogy scales.As the number of interconnect layers and gate den-sity increases,the switching activity increases which lead to in-crease current density and voltage drop along the power supplynet.Increasing the frequency and decreasing the rise/fall transi-tion time in today’s designs causes more simultaneous switch-ing activity within a small time interval and increases the in-stantaneous currents.The power supply noise reduces the ac-tual voltage level reaching a device,which increases the signaldelay and results in signal integrity loss and performance degra-dation.It may also cause logic errors,degradation in switchingspeed and hence timing errors.PSN includes the inductive∆I noise(L dIdt )and IR voltagedrop.The former is derived from the distributed RLC modelof on-chip power lines and the latter is caused by the switching inside the circuit as well as input and output buffers.Applyinginput patterns to a CMOS circuit creates the signal switchingand causes the switching currents.To activate the switching ina circuit,a pair of patterns is required to be applied to the inputsof the circuit.Assuming there are n number of inputs,2n2n22n number of pair patterns are required for an exhaustive search tofind the pair of patterns that generate the maximumPSN.Therefore,applying all possible patterns to a circuit tofind such pairs is possible only for the circuits with very smallnumber of inputs.New techniques are needed to estimate powersupply noise efficiently andfind the pattern(s)that generate the maximum PSN in reasonable amount of time.B.Prior WorkSeveral approaches have been proposed for power supply noise analysis and estimation in recent years.Some closed-form equations are derived in[1]to calculate simultaneous switching noise.Estimation of the ground bounce,caused by the switching in internal circuitry for deep-submicron cir-cuits,using a scaling model is discussed in[2].Reference[3] proposes a simulated switching circuit model to estimate PSN which includes IR voltage drop and∆I noise based on an inte-grated package-level and chip-level power bus mode.Modeling of PSN on distributed on-chip power networks is described in[4].A TE and neural network are used tofind the patterns gen-erating maximum instantaneous current[5].The neural net-work is used to learn the behavior of chip power consumption and changes due to different input patterns applied.Several ge-netic algorithms forfinding pattern(s)that stimulate the worst cases are proposed in[6-10].In[7],the standard cells in the technology library are pre-characterized with SPICE to derive the delay and switching current waveform characteristics and a event-driven simulator along with a delay lookup table is used to perform timing analysis of switching events.A combination of Monte Carlo and genetic algorithm is employed to search for the worst case input vector pair(s)that induce the maximum switching noise.The current waveform of the entire design is not a direct su-perposition of the individual block current waveforms when RC power/ground network is considered.The wire/substrate capac-itances provide some of the current drawn and help in reducing the instantaneous current surge.The authors in[6][9]tackle this problem.Current/voltage waveform libraries for each cell in a library are derived using SPICE.A current waveform simulator is used to simulate a small set of patterns derived iteratively us-ing a genetic algorithm.Finding the maximum voltage drop in the power bus of digital VLSI circuits using a genetic algorithm is discussed in[10].In this work,thefitness value for different input vector pairs is the worst-case voltage drop at a specified node in the power bus.C.Contribution and Paper OrganizationIn previous test pattern generation methods,impact of noise on the transient characteristics is not taken into consideration during the initial generation of current/voltage waveform li-braries.Hence,the estimated noise level may not be accu-rate.On average10%overestimate in noise voltage was re-ported compared to SPICE for025µm technology[6].This estimation error may increase as the technology scales down.Vdd pinFig.1.The circuit model and power supply noise measurement.We propose a pattern generation algorithm that targets power supply noise.Our methodology employs common Automatic Test Pattern Generation(A TPG)technique applied to conven-tional stuck-at faults.With the aid of an A TPG our technique quickly and accurately identifies the transient characteristics of gates for a given pattern and its relationship with PSN.The pat-tern generation process is independent of the physical layout information and preprocessing of library cells and guarantees a tight lower bound for maximum PSN.The rest of the paper is organized as follows.Section II de-scribes power noise model that includes the effect of gate fanout on the maximum PSN induced in the circuit.The pattern gener-ation strategy to obtain maximum PSN is explained in Section III.The algorithm and a small example are shown in Section IV.The experimental results are discussed in Section V.Fi-nally,the concluding remarks are in Section VI.II.P OWER S UPPLY N OISE(PSN)M ODELIn general,PSN includes two components:inductive∆I noise and power net IR voltage drop and is given by PSNL dIdt IR.The inductive∆I noise(L dIdt)depends on the rateof change of the instantaneous current,while the IR voltage drop is caused by the instantaneous current through the resis-tive power and ground network.The inductance is mainly due to package lead and wire/substrate parasitics. Simultaneous switching of a large number of gates often in-duces a very large current spike on the power/ground lines in a short time interval.With low-k copper(Cu)interconnects be-ing used in deep-submicron designs,the resistance of the wires is drastically reduced.This will generate considerable induc-tive noise L dIdt even though the inductance L can be relativelysmall.The simulation results in literature,e.g.[8],shows that inductive noise dominates the resistive noise.For the worst case analysis,the idea is to generate the steepest maximum switch-ing current spike.In order to create maximum switching noise, it is important to analyze the characteristics of the switching current waveform.The switching current waveform of each gate is determined by the propagation delay(t d)and its drive capacity(I max).Em-pirical evidence shows that all switching currents last for ap-proximately3t d and the peak drive current may slightlychange Fig.2.Current I t of the entire block in two different cases.for different capacitive load.The propagation delay is directlyrelated to the fanout of the gate.Therefore,a gate with a smaller fanout has less propagation delay and hence a shorter current waveform duration,i.e the rate of change of current dIdtis higher. Hence,it induces greater inductive noise.To illustrate the effect of fanout on power supply noise,we performed a simple experimentation.Consider a block con-sisting of10NAND gates which switch simultaneously in two different cases.In Case1,each gate has a fanout of3minimum-sized inverters while in Case2,each gate has a fanout of2min-imum sized inverters.The circuit model used for power/ground pin and power/ground network is shown in Figure1.Each V dd and V ss pin is modeled as an RLC circuit.The pin parasitics are R p,L p and C p for V dd pin and R s,L s and C s for V ss pin.The power/ground network is essentially modeled as a lumped RLC network.The simulations are performed on the circuit implemented in 013µm technology.Figure2shows the SPICE simulation re-sults for the block current waveforms in the two different cases. The variation of peak current value in the two cases is insignifi-cant.The duration of the switching current waveform in Case1 is greater than in Case2due to large propagation delay which is proportional to fanout.Figure3shows the corresponding rateof current change.The rate of change of switching current dIdtis greater in Case2and hence induces greater inductive noise. Figure4shows the corresponding PSN waveforms.We com-pute the power supply noise from the transient voltage wave-forms on the power/ground lines as:V PSN t V dd pin V ss pin V dd block t V ss block t where V dd pin(V ss pin)is the input supply(ground)voltages to the package lead(1.2V and0V respectively in our case), V dd block t and V ss block t are the transient voltage waveforms on the power and ground network,respectively.It is clear that noise induced in Case2is greater than in Case1even thoughFig.4.PSN induced in two different cases.the peak current occurs in Case1.This confirms that maxi-mum switching current does not necessarily generate maximum switching noise.Based on these analytical and empirical observations,as a main guideline to generate maximum PSN,we give pref-erence to patterns that cause more switching in gates with smaller fanouts.More formally,suppose a circuit G has n gates g1g2g n with fanout values of f1f2f n corre-sponding to those gates.Let g i V1and g i V2be the out-put of gate g i for two input patterns V1and V2,respectively.s V1V2 i g i V1g i V2will be a binary variable indicat-ing if gate g i has a transition in its output when pattern pair (V1V2)is applied.According to our guideline,to maximizef i.andweun-dtand also the peak current drawn.As explained in Section II, the inductive noise dominates the resistive noise.More specif-ically,the rate of current change can be increased by stimulat-ing simultaneous switching in large number of gates with low fanout in a circuit.A.Timing of Switching EventsThe propagation delay of a gate depends on many factors such as fanout load,input rise/fall time and drive strength.Due to difference in propagation delay of the gates,a change in pri-mary input(PI)will trigger a sequence of switching events in the gates that are directly or indirectly connected to it.Since the switching activity inside the circuit determines the switching noise,it is important tofind the time intervals where maximum simultaneous switchings occur.To determine the simultaneous switching activity within a clock cycle T,we break down theclock cycle into N small time frames.Each time frame has a duration of T N and N is chosen based on the required resolution.We simulated an ISCAS’85benchmark circuit (c 432)for a random pattern pair that generated high PSN,using PowerMill tool in Synopsys which is an event driven transistor-level sim-ulator [11].Figure 5shows the number of switchings over a period of time when the pattern pair V 1V 2is applied.Thehorizontal axis plots the time intervals (TN 10ps )from the time the second vector V 2is applied .Maximum simultane-ous switching activity occurs at the beginning of the simulation time frame and small peaks occur later in the simulation pe-riod.Simulation results for all ISCAS’85benchmarks confirm that the maximum simultaneous switching activity occurs in the early period of the simulation cyle.Figure 6shows the corresponding SPICE simulation current waveform for the pattern applied to circuit c432.It shows that the current drawn from the power supply is maximum at the early stage of the clock cycle and decreases later on.The first peak in the current waveform is due to the initial maximum si-multaneous switching activity.Therefore,to generate the steep-est maximum current (maximum noise)we need to increase the number of switchings in the low-fanout gates of the circuit dur-ing the early period of the cycle.B.PreprocessingFor each time frame T ,a subset of active gates in a circuit G will be chosen and the pattern generation works according to the following three guidelines:1)Gate Fanout:Sort gates in increasing order of their fanouts.2)Gate Level:Within each group,formed in the previous step,sort them according to the level that they are posi-tioned in.A level of a gate is the distance of the gate from the primary inputs (PI).When back-traced,a gate close to the PI’s has more number of don’t-cares (X’s)in the input pattern than a gate far away from the PI’s.Hence,choos-ing a node with more number of X’s,i.e.a gate in lower level,leaves us with more choices of assigning transitions on the other nodes and increases the chance of generating maximum switching activity in the time frame.3)Gate Transition:Both types of transitions (01and 10)are tested in each iteration.Depending on the topology of the circuit,the location of the gate and the way that it affects others,one of these transitions may have a better chance in maximizing PSN.In the next subsection,we show how our algorithm uses these guidelines and the conventional model of stuck-at-fault (saf )and A TPG process to justify a transition at each gate and find vector pairs that maximize PSN.IV.A LGORITHMThe pattern generation algorithm is shown in Figure 7.Given a design,in the preprocessing phase the target time frames with the likelihood of having switching activity are obtained.We then use an A TPG algorithm,independent of the simulation method,to find target time frames.01:For each target time frame T 02:03:G gates switch in time frame T04:Sort gates in G in increasing order of their fanouts05:Sort equal-fanout gates in G in increasing order of their levels 06:PSN max 007:V max08:for (i 1G i )09:10:Perform A TPG using TetraMax to get sa 0sa 1patterns for g i G 11:if (both patterns V 1and V 2exists)12:13:Try V 1V 2;if successful run PowerMill to compute PSN 114:Try V 2V 1;if successful run PowerMill to compute PSN 215:16:if (successful and PSN 1and/or PSN 2are computed)17:18:PSN max MAX PSN 1PSN 2PSN max 19:V max Update input vector pair(s)accordingly 20:21:22:23:Return PSN max and vector pair set V max creating it.Fig.7.Deterministic test pattern generation procedure.A.PseudocodeFor each target time frames,the corresponding set of gates (G )that switch in this time frame are extracted (line 03).The gates are sorted (lines 04-05)using the criteria explained in the Section III.In the pattern generation process (lines 08-21),tran-sitions are assigned and justified to gates from the sorted list of gates.To justify a transition at a node,we use an A TPG mechanism (i.e.TetraMax [12]in our case)originally used for stuck-at fault testing.The algorithm obtains patterns to justify a value ’0’at a node,(viewed as a stuck-at-1sa 1fault)and a ’1’at a node,(viewed as a stuck-at-0sa 0fault).When both patterns exist (line 11-15),a 01or 10transition can be generated at the output of a selected gate.The A TPG process generates the pattern pair (V 1V 2)based on zero-delay model.Now we use a power simulator (i.e.Pow-erMill [11]in our case)to accurately measure PSN (lines 13-14).PowerMill is a variable delay event-driven simulator and it takes into account the hazards and glitches caused due to dif-ference in the gate propagation delays during the PSN mea-surement.The result of PSN measurement for this pattern pair is compared to the maximum found so far (PSN max )and the worst case scenario of power supply noise is saved.The vec-tor pair set (V max )are also updated accordingly (line 19).Note that the A TPG based pattern generation is technology indepen-dent and does not require any pre-processing of library cells.On the other hand,the power estimator is used to evaluate the patterns based on the library/technology.Instead of finding one pair of patterns,the procedure can be slightly modified to find and report all pattern pairs that create noise in a given range,e.g.PSN max PSN max ∆.B.ExampleFor purpose of illustration consider Figure 8showing generic test pattern generation process applied to a small example cir-cuit.The stuck-at fault patterns are generated by back-tracing the node towards the primary inputs and are listed in Figurez1z2(a)sa0sa1sa0sa1sa0sa1sa0sa1sa0sa1sa0sa1a b c d ef z2z1igh X X X 0X X X X 10X XX 10X X X0X X 0X X 0X 0X X X X0X X 11XX XX 01X XX 0X X X1X XX 10X X 1X 1PrimaryInput(b)(c)Fig.8.A TPG process for a small example circuit.8(b).In conventional stuck-at fault test generation,the obser-vation points are the primary outputs.In our method,however,as we are interested in only back-tracing,the node itself is con-sidered to be the observation point.Initially,the input vector pair V 1V 2is assumed to be all unknown X values.The gates are sorted in increasing order of fanout as shown in Figure 8(c).An untried node with the lowest fanout is selected from the sorted list and a transition is assigned to it.For example,in the first iteration,node f is selected and a 01transition is assigned to it.The 01transition assignment can be viewed as a sa 1sa 0fault pair at the node.Since f is the first node in the list and a 01transition is selected,therefore V 1and V 2patterns are equal to sa 1and sa 0patterns for node f ,respectively.Note carefully,there is no conflict for the first chosen node.A conflict occurs when there is a mismatch in the compari-son of the respective stuck-at fault patterns with the input vector pair.If the patterns match then the input pattern pair is updated by replacing the corresponding ’X’values with known justified values in the stuck-at fault patterns.For example,after justify-ing a 01transition at node f ,the input vector pair becomesTABLE IC OMPARING EXHAUSTIVE SIMULATION AND OUR METHOD .Circuit #PI’s #Gates Peak NoiseCPU Time [sec][V]SPICE Our Method c17560.421810.5cm424180.58354 2.0cm1386150.612682 3.5TABLE IIE XPERIMENTAL RESULTS FOR VARIOUS ISCAS85BENCHMARK CIRCUITS .Circuit #PI’s #Gates Peak Noise Peak Noise CPU Time (near end)[V](far end)[V][sec]c432361600.760.86179c499412020.410.52170c880603570.810.99246c1355415140.520.64332c1908338800.730.87386c35405016670.620.75444c531517822900.820.99568c62883224160.89 1.06636V 1V 21X 1XX 0XXXX .The updated input pattern after each gate transition justification is shown in the last column of Figure 8(c).The same procedure is repeated for the next node i and a 10transition is justified.The input pattern pair be-comes V 1V 21X 1X 00X 0X 1after a 10transition is justified on gate i .When there is a mismatch,then the assigned transition cannot be justified and thus the opposite transition is tried.For node z1,when a 01transition is tried to be justi-fied,a conflict occurs.In case of a conflict,an opposite transi-tion,i.e.10transition is tried.If both transition assignments fail,the node is skipped and the next node in the list is tried.The process is repeated for all the nodes in the list.After processing the entire list,any leftover X’s in the generated pattern input pair V 1V 2will be changed to create transitions because they might still induce more glitches and cause more power supply noise in the circuit.Based on this guideline,’X’in V 2000X 1will be replaced by ’0’and the final pattern generated for the example shown in Figure 8(a)is V 1V 21011000001.V.E XPERIMENTAL R ESULTSExperiments are performed on ISCAS’85benchmark cir-cuits implemented in 025µm technology.The V dd pin char-acteristic values used in our simulations are R p R s 03Ω,L p L s 8nH and C p C s 4pF .These typical values are chosen from the TSMC 025µm library application notes.The effective resistance and capacitance values in the power/ground network are estimated based on the parasitic values per unit length.The resistance and capacitance per unit length used for the power/ground lines are r 004Ωµm and c 10aF µm ,respectively.The primary input’s rise time is set to 100ps.To show the quality of patterns generated by the proposed technique we performed exhaustive simulation for three small benchmark circuits.Our algorithm generated the pattern pairs that cause maximum power supply noise compared to exhaus-tive pattern simulation results in much shorter CPU time.Forbenchmark circuit c17,it took181sec to perform the exhaustive simulation while it takes less than a second for the same vector pair to be generated by our method.Table I shows the results of exhaustive simulation and compares the run times with our method.In all three cases,our method generates the worst case power supply noise test patterns,identical to those found by SPICE,in very short time.The power supply noise is calculated from the transient volt-age waveforms on the power/ground lines as[7]:V PSN t V dd pin V dd block t V ss block twhere V dd pin is the input supply voltage to the package lead (2.5V olt in our case)V dd block t and V ss block t are the tran-sient voltage waveforms on the power and ground network, respectively.When V noise t is positive,the effective supply voltage is less than the nominal supply voltage V dd pin.Ta-ble II shows the peak noise voltages at near end(node clos-est to the power/ground pins)and far end(node farthest from power/ground pins).As expected(see Section II),the far end noise is more severe due to larger effective resistive parasitics experienced by the blocks close to the far end.The main advan-tage of our method is its short runtime.For example,SPICE takes12minutes to simulate one input vector pair for circuit c432,while it takes179sec to generate and simulate500pat-terns for maximum power supply noise by our method.VI.C ONCLUSIONAn automatic pattern generation mechanism to stimulate the maximum power supply noise has been presented in this paper. The basic strategy is to maximize the switching activities of those gates in thefirst few levels of the circuit that have lower fanouts.Our methodology uses conventional A TPG and power simulators to evaluate a gate-level circuit andfinds patterns that cause maximum switching activity and thus maximum instan-taneous current.We have verified the quality of these patterns using SPICE simulation.In all cases,our methodfinds the same (or comparable)patterns while its running time is2to3order of magnitude faster than that of SPICE.A CKNOWLEDGEMENTSThis work was supported in part by the National Science Foundation CAREER Award#CCR-0130513.R EFERENCES[1]R.Senthinatharr and J.L.Prince,Simultaneous SwitchingNoise of CMOS Devices and Systems,Kluwer Academic Publishers,1994.[2]Y.Chang,S.Gupta and M.Breuer,”Analysis of GroundBounce in Deep Sub-Micron Circuits,”in Proc.VLSI Test Symp.(VTS’97),pp.110-116,1997.[3]H.Chen and D.Ling,”Power Supply Noise AnalysisMethodology for Deep-Submicron VLSI Design,”in Proc.Design Automation Conf.(DAC’97),pp.638-643,1997. [4]L.Zheng,B.Li,and H.Tenhunen,”Efficient and AccurateModeling of Power Supply Noise on Distributed On-Chip Power Networks,”in Proc.Int.Symposium on Circuits and Systems(ISCAS’00),pp.513-516,2000.[5]E.Liau and ndsiedel,”Automatic Worst Case Pat-tern Generation Using Neural Networks&Genetic Algo-rithm for Estimation of Switching Noise on Power Supply Lines in CMOS Circuits,”in Proc.European Test Work-shop(ETW’03),pp.105-110,2003.[6]Y.Jiang,K.Cheng and A.Deng,”Estimation of Maxi-mum Power Supply Noise for Deep Sub-Micron Designs,”in Proc.Int.Symp.on Low Power Electronics and Design (ISLPED’98)),pp.233-238,1998.[7]S.Zhao,K.Roy and C.Koh,”Estimation of Inductive andResistive Switching Noise on Power Supply Network in Deep Sub-micron CMOS Circuits,”in Proc.Int.Conf.on Computer Design(ICCD’00),pp.65-72,2000.[8]S.Zhao and K.Roy,”Estimation of Switching Noise onPower Supply Lines in Deep Sub-micron CMOS Circuits,”in Proc.Thirteenth Int.Conf.on VLSI Design,,pp.168-173,2000.[9]Y.Jiang,K.Cheng and A.Krstic,”Estimation of Maxi-mum Power and Instantaneous Current Using a Genetic Algorithm,”in Proc.Custom Integrated Circuits Conf.(CICC’97),pp.135-138,1997.[10]G.Bai,S.Bobba and I.Haji,”Maximum Power Sup-ply Noise Estimation in VLSI Circuits Using Multimodal Genetic Algorithms,”in Proc.Int.Conf.on Electronics, Circuits and Systems(ICECS’01),vol.3,pp.1437-1440, 2001.[11]Synopsys Inc.,Power Mill Reference Manual,2003.[12]Synopsys Inc.,TetraMAX Reference Manual,2003.。

simulation modeling and analysis

simulation modeling and analysis

simulation modeling and analysisSimulation modeling and analysis is a powerful tool used to study and analyze complex systems. It involves creating computational models that mimic real-world systems and running simulations to understand their behavior, identify strengths and weaknesses, and explore possible improvements. This technique is widely used in various fields such as engineering, healthcare, transportation, and finance to make informed decisions and optimize system performance.One of the key benefits of simulation modeling and analysis is its ability to study systems that are too costly, time-consuming, or unethical to study in the real world. For example, in healthcare, simulation can be used to model the spread of a disease in a population and evaluate the impact of different intervention strategies without actually exposing people to the disease. This can help healthcare professionals and policymakers plan and prepare for potential outbreaks.To conduct a simulation modeling and analysis study, several steps need to be followed. The first step is to define the problem or research question that needs to be addressed. This involves clearly stating the objectives, identifying the key variables, and specifying the boundaries and constraints of the system under study.The next step is to collect relevant data that will be used to parameterize the simulation model. This includes both historical and current data on system inputs, outputs, and performance metrics. Data sources can vary depending on the application, and can include measurements from real-world systems, expertopinions, or data generated through controlled experiments.Once the data is collected, the next step is to develop a simulation model that represents the real-world system. This involves determining the appropriate modeling technique, such as discrete event simulation, agent-based modeling, or system dynamics, and implementing the model using specialized software tools. The model should accurately capture the essential features and dynamics of the system, including the relationships between variables and the rules that govern their interactions.After the model is developed, it needs to be validated and verified to ensure its accuracy and reliability. Validation involves comparing the model's behavior to real-world observations or benchmark data to determine if it reproduces the system's behavior faithfully. Verification, on the other hand, involves checking the correctness of the model's implementation and its adherence to the intended design.Once the model is validated and verified, it can be used to run simulations and conduct various experiments to explore different scenarios and assess the system's performance under different conditions. This can involve changing input parameters, modifying system rules, or conducting sensitivity analyses to identify critical factors that influence system behavior.The simulation results need to be analyzed and interpreted to draw meaningful conclusions and make informed decisions. This includes analyzing performance metrics, such as throughput, waiting times, or costs, and comparing them across differentscenarios or strategies. Statistical techniques, such as hypothesis testing or regression analysis, can be used to assess the significance of the results and identify the factors that have the most impact on system performance.Finally, the findings of the simulation modeling and analysis study need to be communicated effectively to stakeholders and decision-makers. This can involve presenting results in the form of charts, graphs, or tables, and providing concise and clear explanations of the implications and recommendations. Visualizations, such as animations or interactive simulations, can also be used to enhance understanding and engagement.In conclusion, simulation modeling and analysis is a valuable approach to study complex systems and optimize their performance. By creating computational models that mimic real-world behavior and running simulations, researchers can gain insights into system dynamics, identify problems, and explore solutions. However, it is important to follow a systematic approach, from problem definition to model validation and analysis, to ensure the accuracy and reliability of the results.。

Electromechanical Systems

Electromechanical Systems

Electromechanical Systems Electromechanical systems are a crucial component of modern technology,playing a vital role in various industries such as automotive, aerospace, robotics, and manufacturing. These systems integrate electrical and mechanical components to perform specific tasks, and their design and implementation require a deep understanding of both disciplines. However, despite their importance, electromechanical systems are not without their challenges. In this essay, we will explore the problems associated with electromechanical systems from multiple perspectives, including technical, economic, and societal considerations. From a technical standpoint, one of the primary problems with electromechanical systemsis the integration of electrical and mechanical components. This integration requires careful design and engineering to ensure that the system functions as intended. Furthermore, the interaction between electrical and mechanical elements can lead to complex issues such as electromagnetic interference, mechanical resonance, and thermal management. These technical challenges require a multidisciplinary approach, with engineers needing to have a deep understanding of both electrical and mechanical principles to effectively address them. Another technical challenge is the reliability and durability of electromechanical systems. These systems are often used in demanding environments, where they are subjectedto harsh conditions such as extreme temperatures, high vibrations, and heavy loads. Ensuring that electromechanical systems can withstand these conditions andcontinue to operate reliably is a significant technical challenge. Additionally,as electromechanical systems become more complex and interconnected, the potential for system-level failures increases, requiring careful consideration of fault tolerance and system redundancy. Beyond technical challenges, there are also economic considerations associated with electromechanical systems. The design and manufacturing of these systems can be costly, particularly when high precision and reliability are required. Furthermore, the maintenance and repair of electromechanical systems can also be expensive, especially when specialized knowledge or components are needed. As a result, cost-effective design and maintenance strategies are essential for the widespread adoption of electromechanical systems across various industries. Societal considerations alsoplay a role in the problems associated with electromechanical systems. As these systems become more prevalent in everyday life, concerns about their environmental impact and energy efficiency come to the forefront. Designing electromechanical systems with sustainability in mind is a significant challenge, requiring engineers to consider the lifecycle of the system, including energy consumption, material usage, and end-of-life disposal. Additionally, as electromechanical systems become more autonomous and interconnected, there are concerns about the potential impact on employment and human labor, particularly in industries that rely heavily on manual labor. In conclusion, electromechanical systems are integral to modern technology, but they are not without their challenges. From technical complexities to economic and societal considerations, there are various problems associated with the design, implementation, and use of electromechanical systems. Addressing these problems requires a multidisciplinary approach, with a focus on reliability, cost-effectiveness, and sustainability. As technology continues to advance, it is essential to continue addressing these challenges to ensure that electromechanical systems can continue to improve our lives while minimizing their negative impact.。

System Modeling and Simulation

System Modeling and Simulation

System Modeling and Simulation System modeling and simulation are two key concepts in the field of engineering and technology. They are used to design, analyze, and optimize complex systems in various industries such as aerospace, automotive, and manufacturing. In this essay, we will discuss the importance of system modeling and simulation, the benefits they offer, and the challenges associated with their implementation.System modeling is the process of creating a mathematical representation of a system. It involves identifying the inputs, outputs, and components of the system and defining their relationships. Simulation, on the other hand, is the process of using the model to predict how the system will behave under different conditions. By combining these two processes, engineers can create virtual prototypes of complex systems and test them before they are built.One of the main benefits of system modeling and simulation is that they allow engineers to identify and correct design flaws early in the development process. By simulating the behavior of a system, engineers can test various scenarios and evaluate the performance of the system under different conditions. This helps to reduce the risk of costly errors and delays during the manufacturing and testing phases of the project.Another benefit of system modeling and simulation is that they enable engineers to optimize the performance of a system. By analyzing the simulation results, engineers can identify areas where the system can be improved and make the necessary adjustments. This can lead to significant cost savings and improved efficiency in the final product.System modeling and simulation also offer benefits in terms of safety. By simulating the behavior of a system, engineers can identify potential safety hazards and take steps to mitigate them. This is particularly important in industries such as aerospace and automotive, where safety is a critical concern.Despite the many benefits of system modeling and simulation, there are also challenges associated with their implementation. One of the main challenges is the complexity of the systems being modeled. As systems become more complex, the models required to simulate their behavior become more complex as well. This canmake it difficult to create accurate models and can increase the time and resources required to complete the simulation.Another challenge is the availability of data. In order to create an accurate model, engineers need access to data on the behavior of the system under different conditions. This data can be difficult to obtain, particularly in industries where the systems being modeled are new or proprietary.In conclusion, system modeling and simulation are critical tools for engineers and designers in a variety of industries. They offer numerous benefits, including the ability to identify and correct design flaws early in the development process, optimize system performance, and improve safety. However, there are also challenges associated with their implementation, including the complexity of the systems being modeled and the availability of data. Despite these challenges, the benefits of system modeling and simulation make them an essential part of modern engineering and design.。

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II.
MODEL AND SIMULATIONS
The unpolable ferroelectric ceramics is assumed to be made up of many randomly oriented grains, each grain is ferroelectric tetragonal and single domain. The 900 switching for the tetragonal symmetry is used as a general representative of the non-1800 domain switching in this paper. For a homogeneous ceramics, the Reuss approximation7 is adopted when the material is subjected to the applied electric field and stress. The orientation of the grain is 3
Simulations on the electromechanical poling of ferroelectric ceramics
Yin-Zhong Wu and Yong-Mei Tao
arXiv:0712.0854v1 [cond-mat.mtrl-sci] 6 Dec 2007
Jiangsu Laboratory of Advanced Functional materials, and Department of Physics, Changshu Institute of Technology, Changshu 215500, P. R. China∗
2
The commercial PZT PIC 151 sample is placed inside a high pressure polyethylene tube which transfers axial compressive stress into uniform radial compressive stress. It is shown that the application of mechanical stress perpendicular to the electric poling direction drastically improves the ferro- and piezoelectric properties, and decreases the magnitude of electric field required for poling. They clearly observe a path dependence of the polarization buildup. The remnant polarization and the piezoelectric coefficient of the ceramics will be different if the mechanical stress is applied before and after the application of electric field. And the energetic approach mentioned above could not give an explanation on this path dependent poling result. In this paper, we employ the two successive 900 switchings model to simulate the poling behavior of ferroelectric ceramics under a radial pressures, as shown in Fig. 1. It is found from our simulations that a larger remnant polarization is obtained under the case that the mechanical load is applied after the electric load, and this supply a new evidence for the validity of the two successive 900 switchings model in explanation of domain switching behavior of the ferroelectric ceramics under the electromechanical load.
PACS numbers: 77wu@
1
I.
INTRODUCTION
Ceramic Lead-zirconate-titanate[PbZrx Ti1−x O3 ] is one of the technologically most important polar oxide materials. It may be used for ferroelectric random access memories, high-storage dynamic RAM capacitors, sensors and actuators in smart structures. Most of these applications require a high remnant polarization, and an external load is applied on the unpolable ceramics to acquire a large polarization in the poling direction1 . On poling, the domains in the ceramics reorient themselves to give a polarization closer to the poling direction. Domain switching and rotation in PZT ceramics can be triggered by either a mechanical stress or an electric field. As is well known, a strong electric field polarizes the ceramics by aligning the polarization of the domains as closely as possible with the electric field. For a strong applied compressive stress paralleling to the polarization, the domain will be rotated to make the polarization as close as possible to 900 from the direction of the applied stress. If the external electric and mechanical loads acted on the domain at the same time, a criterion for domain switching was first proposed by Hwang2 on the basis of the total work done by electric and mechanical loads for switching the domain as the driving force, which is expressed by
s σij ∆es ij + Ei ∆Pi ≥ 2Ps Ec ,
(1)
where Ei and σij are the components of the applied electric field and stress, respectively, Pis and es ij are the components of the spontaneous polarization and spontaneous strain, respectively. However, Hwang’s criterion cannot explain the dependence of the mechanical stress on coercive electric field, and the dependence of electric field on coercive mechanical stress, and there is no energetic difference between 900 domain-switching and 1800 domainswitching. Last year, a new criterion for domain-switching under the application of both electric and mechanical loads in ferroelectric materials was proposed3,4 , in which the 1800 domain switching is replaced by two successive 900 switchings. It is found that this two-step switching criterion can model the hysteresis loops and butterfly-shape curves of ferroelectric materials and accurately predict the coercive electric fields under different applied mechanical stresses. In most experimental and theoretical studies, the uniaxial compressive stress and the applied electric field are loaded in the same direction1,5 . Recently, the electromechanical poling of a ferroelectric PZT rod is reported6 . The set-up is shown in Fig. 1.
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