PBSS4350Z中文资料
HMC435MS8G_07中文资料
State Low High
Truth Table
Bias Condition* 0 Vdc @ 25 μA Typical +5 Vdc @ 25 μA Typical
Control Input
Signal Path State
ELECTROSTATIC SENSITIVE DEVICE
A
B
RFC to:
SWITCHES - SMT
9 - 256
Electrical Specifications, TA = +25° C, Vctl = 0/+5 Vdc, 50 Ohm System
Insertion Loss
Parameter
Isolation (RFC to RF1/RF2)
Return Loss (On State)Fra bibliotekUnits
dB dB dB
dB dB dB dB dB
dB dB dB
dB
dBm
dBm
ns ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at
+25 C
+85 C
56
-40 C
54
52
50
48
46
44
42
40 0 0.5 1 1.5 2 2.5 3 3.5 4
PBSS5350Z中文资料
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350Z
handbook, halfpage
1000
MGW167
handbook, halfpage
− 1.2
MGW168
hFE 800
(1)
VBE (V) − 0.8
元器件交易网
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
PBSS5350Z 50 V low VCEsat PNP transistor
Product specification Supersedes data of 2003 Jan 20 2003 May 13
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a function of collector current; typical values.Leabharlann −1−10−102
−103 −104 I C (mA)
−1
−10
−102
−103 −104 I C (mA)
IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
ADSP-21262SBBCZ150资料
aSHARC and the SHARC logo are registered trademarks of Analog Devices, Inc.SHARC®Embedded ProcessorADSP-21262Rev. BInformation furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for anyinfringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: FAX: 781.461.3113 © 2005 Analog Devices, Inc. All rights reserved.SUMMARYHigh performance 32-bit/40-bit floating-point processor Code compatibility—at assembly level, uses the same instruction set as other SHARC DSPsSingle-instruction multiple-data (SIMD) computational archi-tecture—two 32-bit IEEE floating-point/32-bit fixed-point/ 40-bit extended precision floating-point computational units, each with a multiplier, ALU, shifter, and register file High bandwidth I/O—a parallel port, an SPI® port, six serial ports, a digital applications interface (DAI), and JTAGDAI incorporates two precision clock generators (PCGs), an input data port (IDP) that includes a parallel data acquisi-tion port (PDAP), and three programmable timers, all under software control by the signal routing unit (SRU) On-chip memory—2M bit of on-chip SRAM and a dedicated 4M bit of on-chip mask-programmable ROMThe ADSP-21262 is available in commercial and industrial temperature grades. For complete ordering information, see Ordering Guide on Page46.KEY FEATURESSerial ports offer left-justified sample-pair and I2S support via 12 programmable and simultaneous receive or trans-mit pins, which support up to 24 transmit or 24 receive I2S channels of audio when all six serial ports (SPORTs) are enabled or six full duplex TDM streams of up to 128 channels per frameAt 200 MHz (5 ns) core instruction rate, the ADSP-21262 operates at 1200 MFLOPS peak/800 MFLOPS sustained performance whether operating on fixed- or floating-point data400 MMACS sustained performance at 200 MHzSuper Harvard Architecture—three independent buses for dual data fetch, instruction fetch, and nonintrusive, zero-overhead I/OTransfers between memory and core at up to four 32-bit floating- or fixed-point words per cycle, sustained2.4G byte/s bandwidth at 200 MHz core instruction rate and 900M byte/sec is available via DMAFigure 1.Functional Block DiagramADSP-21262 ADDITIONAL KEY FEATURES2M bit on-chip dual-ported SRAM (1M bit block 0, 1M bit block 1) for simultaneous access by core processor and DMA4M bit on-chip dual-ported mask-programmable ROM(2M bit in block 0 and 2M bit in block 1)Dual data address generators (DAGs) with modulo and bit-reverse addressingZero-overhead looping with single-cycle loop setup, providing efficient program sequencingSingle-instruction multiple-data (SIMD) architecture provides:Two computational processing elementsConcurrent execution—each processing element executes the same instruction, but operates on different data Parallelism in buses and computational units allows single cycle executions (with or without SIMD) of a multiplyoperation; an ALU operation; a dual memory read orwrite; and an instruction fetchAccelerated FFT butterfly computation through a multiply with add and subtract instructionDMA controller supports:22 zero-overhead DMA channels for transfers between theADSP-21262 internal memory and serial ports (12), the input data port (IDP) (eight), the SPI-compatible port(one), and the parallel port (one)32-bit background DMA transfers at core clock speed, inparallel with full-speed processor executionJTAG background telemetry for enhanced emulation featuresIEEE 1149.1 JTAG standard test access port and on-chip emulationDual voltage: 3.3 V I/O, 1.2 V coreAvailable in 136-ball BGA and 144-lead LQFP packagesAlso available in lead-free packagesDigital applications interface includes six serial ports, two precision clock generators, an input data port, three pro-grammable timers, and a signal routing unit Asynchronous parallel/external port provides:Access to asynchronous external memory16 multiplexed address/data lines that can support 24-bitaddress external address range with 8-bit data or 16-bit address external address range with 16-bit data66M byte/sec transfer rate for 200 MHz core rate50M byte/sec transfer rate for 150 MHz core rate256 word page boundariesExternal memory access in a dedicated DMA channel8-bit to 32-bit and 16-bit to 32-bit word packing options Programmable wait state options: 2 to 31 CCLK Serial ports provide:Six dual data line serial ports that operate at up to50M bit/sec for a 200 MHz core and up to 37.5M bit/sec for a 150 MHz core on each data line—each has a clock, frame sync, and two data lines that can be configured as either a receiver or transmitter pairLeft-justified sample-pair and I2S support, programmable direction for up to 24 simultaneous receive or transmit channels using two I2S-compatible stereo devices perserial portTDM support for telecommunications interfaces including 128 TDM channel support for newer telephony inter-faces such as H.100/H.110Up to 12 TDM stream support, each with 128 channelsper frameCompanding selection on a per channel basis in TDM mode Input data port provides an additional input path to the SHARC core configurable as either eight channels of I2S or serial data or as seven channels plus a single 20-bit wide synchronous parallel data acquisition portSupports receive audio channel data in I2S, left-justifiedsample pair, or right-justified modeSignal routing unit (SRU) provides configurable and flexible connections between all DAI components, six serial ports, two precision clock generators, three timers, an input data port/parallel data acquisition port, 10 interrupts, six flag inputs, six flag outputs, and 20 SRU I/O pins (DAI_Px) Serial peripheral interface (SPI)Master or slave serial boot through SPIFull-duplex operationMaster-slave mode multimaster supportOpen drain outputsProgrammable baud rates, clock polarities, and phases3 Muxed Flag/IRQ lines1 Muxed Flag/Timer expired lineROM-based security features:JTAG access to memory permitted with a 64-bit key Protected memory regions that can be assigned to limitaccess under program control to sensitive codePLL has a wide variety of software and hardware multi-plier/divider ratiosRev. B|Page 2 of 48|August 2005ADSP-21262Rev. B |Page 3 of 48|August 2005TABLE OF CONTENTSGeneral Description ................................................. 4ADSP-21262 Family Core Architecture ...................... 4ADSP-21262 Memory and I/O Interface Features ......... 6Target Board JTAG Emulator Connector .................... 8Development Tools ............................................... 9Evaluation Kit ..................................................... 10Designing an Emulator-CompatibleDSP Board (Target) ........................................... 10Additional Information ......................................... 10Pin Function Descriptions ........................................ 11Address Data Pins as Flags ..................................... 14Core Instruction Rate to CLKIN Ratio Modes ............. 14Address Data Modes ............................................. 14ADSP-21262 Specifications ....................................... 15Recommended Operating Conditions ....................... 15Electrical Characteristics ........................................ 15Absolute Maximum Ratings ................................... 16ESD Sensitivity .................................................... 16Timing Specifications ........................................... 17Output Drive Currents .......................................... 38Test Conditions ................................................... 38Capacitive Loading ............................................... 38Environmental Conditions ..................................... 39Thermal Characteristics ........................................ 39136-Ball BGA Pin Configurations ............................... 41144-Lead LQFP Pin Configurations ............................. 44Package Dimensions ................................................ 45Ordering Guide (46)REVISION HISTORY8/05—Rev. A to Rev. BMiscellaneous Format Updates..........................Universal Changed “Digital Audio Interface” to “DigitalApplications Interface”........................................Global Deleted ROM-Based Security from Page 8Applied Corrections and Additional Information to:Summary ............................................................ 1Key Features ........................................................ 1Additional Key Features .......................................... 2General Description ............................................... 4ADSP-21262 Family Core Architecture ...................... 4Serial Ports .......................................................... 6Parallel Port ......................................................... 8Power Supplies ..................................................... 8Evaluation Kit .................................................... 10Pin Function Descriptions ..................................... 11Recommended Operating Conditions ...................... 15Clock Signals ...................................................... 19Precision Clock Generator (Direct Pin Routing) ......... 23Output Drive Currents ......................................... 38Capacitive Loading .............................................. 38Environmental Conditions .................................... 39Thermal Characteristics ........................................ 39Package Dimensions ............................................ 45Ordering Guide .. (46)ADSP-21262 GENERAL DESCRIPTIONThe ADSP-21262 SHARC DSP is a member of the SIMDSHARC family of DSPs featuring Analog Devices Super Har-vard Architecture. The ADSP-21262 is source code compatible with the ADSP-2126x, ADSP-21160, and ADSP-21161 DSPs as well as with first generation ADSP-2106x SHARC processors in SISD (single-instruction, single-data) mode. Like other SHARC DSPs, the ADSP-21262 is a 32-bit/40-bit floating-point proces-sor optimized for high performance signal processing applica-tions with its dual-ported on-chip SRAM, mask-programmable ROM, multiple internal buses to eliminate I/O bottlenecks, and an innovative digital applications interface.As shown in the Functional Block Diagram on Page 1, the ADSP-21262 uses two computational units to deliver a five to ten times performance increase over previous SHARC proces-sors on a range of DSP algorithms. Fabricated in a state-of-the-art, high speed, CMOS process, the ADSP-21262 DSP achieves an instruction cycle time of 5 ns at 200 MHz or 6.6 ns at 150 MHz. With its SIMD computational hardware, the ADSP-21262 can perform 1200MFLOPS running at 200 MHz or 900 MFLOPS running at 150 MHz.Table1 shows performance benchmarks for the ADSP-21262. The ADSP-21262 continues SHARC’s industry-leading stan-dards of integration for DSPs, combining a high performance 32-bit DSP core with integrated, on-chip system features. These features include 2M bit dual-ported SRAM memory, 4M bit dual-ported ROM, an I/O processor that supports 22 DMA channels, six serial ports, an SPI, external parallel bus, and digi-tal applications interface.The block diagram of the ADSP-21262 on Page1 illustrates the following architectural features:•Two processing elements, each containing an ALU, multi-plier, shifter, and data register file•Data address generators (DAG1, DAG2)•Program sequencer with instruction cache•PM and DM buses capable of supporting four 32-bit data transfers between memory and the core at every core pro-cessor cycle•Three programmable interval timers with PWM genera-tion, PWM capture/pulse width measurement, andexternal event counter capabilities•On-chip dual-ported SRAM (2M bit)•On-chip dual-ported, mask-programmable ROM(4M bit)•JTAG test access port•8- or 16-bit parallel port that supports interfaces to off-chip memory peripherals•DMA controller•Six full-duplex serial ports•SPI-compatible interface•Digital applications interface that includes two precisionclock generators (PCG), an input data port (IDP), six serial ports, eight serial interfaces, a 20-bit synchronous parallel input port, 10 interrupts, six flag outputs, six flag inputs,three programmable timers, and a flexible signal routingunit (SRU)Figure2 shows one sample configuration of a SPORT using the precision clock generator to interface with an I2S ADC and an I2S DAC with a much lower jitter clock than the serial port would generate itself. Many other SRU configurations are possible.ADSP-21262 FAMILY CORE ARCHITECTUREThe ADSP-21262 is code compatible at the assembly level with the ADSP-21266, ADSP-2136x, ADSP-2116x, and the first gen-eration ADSP-2106x SHARC DSPs. The ADSP-21262 shares architectural features with the ADSP-2126x, ADSP-2136x, and ADSP-2116x SIMD SHARC family of DSPs, as detailed in the following sections.SIMD Computational EngineThe ADSP-21262 contains two computational processing ele-ments that operate as a single-instruction multiple-data (SIMD) engine. The processing elements are referred to as PEX and PEY and each contains an ALU, multiplier, shifter, and register file. PEX is always active, and PEY may be enabled by setting the PEYEN mode bit in the MODE1 register. When this mode is enabled, the same instruction is executed in both processing ele-ments, but each processing element operates on different data. This architecture is efficient at executing math intensive DSP algorithms.Entering SIMD mode also has an effect on the way data is trans-ferred between memory and the processing elements. When in SIMD mode, twice the data bandwidth is required to sustain computational operation in the processing elements. Because of this requirement, entering SIMD mode also doubles the band-width between memory and the processing elements. When using the DAGs to transfer data in SIMD mode, two data values are transferred with each access of memory or the register file.Table 1.ADSP-21262 Benchmarks (at 200 MHz)Benchmark Algorithm Speed(at 200 MHz)1024 Point Complex FFT (Radix 4, with reversal)61.3 µsFIR Filter (per tap)11Assumes two files in multichannel SIMD mode.3.3 nsIIR Filter (per biquad)113.3 ns Matrix Multiply (pipelined)[3×3] × [3×1] [4×4] × [4×1]30 ns 53.3 nsDivide (y/×)20 nsInverse Square Root30 nsRev. B|Page 4 of 48|August 2005ADSP-21262Rev. B |Page 5 of 48|August 2005Independent, Parallel Computation UnitsWithin each processing element is a set of computational units. The computational units consist of an arithmetic/logic unit (ALU), multiplier, and shifter. These units perform all opera-tions in a single cycle. The three units within each processing element are arranged in parallel, maximizing computational throughput. Single multifunction instructions execute parallel ALU and multiplier operations. In SIMD mode, the parallel ALU and multiplier operations occur in both processing ele-ments. These computation units support IEEE 32-bit single precision floating-point, 40-bit extended precision floating-point, and 32-bit fixed-point data formats.Data Register FileA general-purpose data register file is contained in eachprocessing element. The register files transfer data between the computation units and the data buses, and store intermediate results. These 10-port, 32-register (16 primary, 16 secondary) register files, combined with the ADSP-2126x enhanced Har-vard architecture, allow unconstrained data flow between computation units and internal memory. The registers in PEX are referred to as R0–R15 and in PEY as S0–S15.Single-Cycle Fetch of Instruction and Four Operands The ADSP-21262 features an enhanced Harvard architecture in which the data memory (DM) bus transfers data and the pro-gram memory (PM) bus transfers both instructions and data (see Figure 1 on Page 1). With the ADSP-21262’s separate pro-gram and data memory buses and on-chip instruction cache, the processor can simultaneously fetch four operands (two over each data bus) and one instruction (from the cache), all in a single cycle.Instruction CacheThe ADSP-21262 includes an on-chip instruction cache that enables three-bus operation for fetching an instruction and four data values. The cache is selective—only the instructions whose fetches conflict with PM bus data accesses are cached. This cache allows full-speed execution of core, looped operations such as digital filter multiply-accumulates, and FFT butterfly processing.Data Address Generators with Zero-Overhead Hardware Circular Buffer SupportThe ADSP-21262’s two data address generators (DAGs) are used for indirect addressing and implementing circular data buffers in hardware. Circular buffers allow efficient program-ming of delay lines and other data structures required in digital signal processing, and are commonly used in digital filters andFigure 2.ADSP-21262 System Sample ConfigurationADSP-21262Fourier transforms. The two DAGs of the ADSP-21262 contain sufficient registers to allow the creation of up to 32 circular buff-ers (16 primary register sets, 16 secondary). The DAGs automatically handle address pointer wraparound, reduce over-head, increase performance, and simplify implementation. Circular buffers can start and end at any memory location. Flexible Instruction SetThe 48-bit instruction word accommodates a variety of parallel operations for concise programming. For example, theADSP-21262 can conditionally execute a multiply, an add, and a subtract in both processing elements while branching and fetch-ing up to four 32-bit values from memory—all in a single instruction.ADSP-21262 MEMORY AND I/O INTERFACE FEATURESThe ADSP-21262 adds the following architectural features to the SIMD SHARC family core:Dual-Ported On-Chip MemoryThe ADSP-21262 contains two megabits of internal SRAM and four megabits of internal mask-programmable ROM. Each block can be configured for different combinations of code and data storage (see memory map, Figure3). Each memory block is dual-ported for single-cycle, independent accesses by the core processor and I/O processor. The dual-ported memory, in com-bination with three separate on-chip buses, allows two data transfers from the core and one from the I/O processor, in a sin-gle cycle.The ADSP-21262’s SRAM can be configured as a maximum of 64K words of 32-bit data, 128K words of 16-bit data, 42K words of 48-bit instructions (or 40-bit data), or combinations of differ-ent word sizes up to two megabits. All of the memory can be accessed as 16-bit, 32-bit, 48-bit, or 64-bit words. A 16-bit float-ing-point storage format is supported that effectively doubles the amount of data that may be stored on-chip. Conversion between the 32-bit floating-point and 16-bit floating-point for-mats is performed in a single instruction. While each memory block can store combinations of code and data, accesses are most efficient when one block stores data using the DM bus for transfers, and the other block stores instructions and data using the PM bus for transfers.Using the DM bus and PM buses, with one dedicated to each memory block, assures single-cycle execution with two data transfers. In this case, the instruction must be available inthe cache.DMA ControllerThe ADSP-21262’s on-chip DMA controller allows zero-over-head data transfers without processor intervention. The DMA controller operates independently and invisibly to the processor core, allowing DMA operations to occur while the core is simul-taneously executing its program instructions. DMA transfers can occur between the ADSP-21262’s internal memory and its serial ports, the SPI-compatible (serial peripheral interface) port, the IDP (input data port), parallel data acquisition port (PDAP), or the parallel port. Twenty-two channels of DMA are available on the ADSP-21262—one for the SPI, 12 via the serial ports, eight via the input data port, and one via the processor’s parallel port. Programs can be downloaded to the ADSP-21262 using DMA transfers. Other DMA features include interrupt generation upon completion of DMA transfers, and DMA chaining for automatic linked DMA transfers.Digital Applications Interface (DAI)The digital applications interface provides the ability to connect various peripherals to any of the SHARC’s DAI pins(DAI_P20–1).Connections are made using the signal routing unit (SRU, shown in the block diagram on Page1).The SRU is a matrix routing unit (or group of multiplexers) that enables the peripherals provided by the DAI to be intercon-nected under software control. This allows easy use of the DAI associated peripherals for a much wider variety of applications by using a larger set of algorithms than is possible with noncon-figurable signal paths.The DAI also includes six serial ports, two precision clock gen-erators (PCGs), an input data port (IDP), six flag outputs and six flag inputs, and three timers. The IDP provides an additional input path to the ADSP-21262 core, configurable as either eight channels of I2S or serial data, or as seven channels plus a single 20-bit wide synchronous parallel data acquisition port. Each data channel has its own DMA channel that is independent from the ADSP-21262’s serial ports.For complete information on using the DAI, see theADSP-2126x SHARC DSP Peripherals Manual.Serial PortsThe ADSP-21262 features six full duplex synchronous serial ports that provide an inexpensive interface to a wide variety of digital and mixed-signal peripheral devices such as the Analog Devices AD183x family of audio codecs, ADCs, and DACs. The serial ports are made up of two data lines, a clock, and frame sync. The data lines can be programmed to either transmit or receive and each data line has its own dedicated DMA channel. Serial ports are enabled via 12 programmable and simultaneous receive or transmit pins that support up to 24 transmit or 24 receive channels of serial data when all six SPORTs are enabled, or six full duplex TDM streams of 128 channels per frame.The serial ports operate at up to one-quarter of the DSP core clock rate, providing each with a maximum data rate of50M bit/sec for a 200 MHz core and 37.5M bit/sec for a150MHz core. Serial port data can be automatically transferred to and from on-chip memory via a dedicated DMA. Each of the serial ports can work in conjunction with another serial port to provide TDM support. One SPORT provides two transmit sig-nals while the other SPORT provides the two receive signals. The frame sync and clock are shared.Serial ports operate in four modes:•Standard DSP serial mode•Multichannel(TDM)modeRev. B|Page 6 of 48|August 2005ADSP-21262Rev. B|Page 7 of 48|August 2005•I 2S mode•Left-justified sample pair modeLeft-justified sample pair mode is a mode where in each frame sync cycle two samples of data are transmitted/received—one sample on the high segment of the frame sync, the other on the low segment of the frame sync. Programs have control over var-ious attributes of this mode.Each of the serial ports supports the left-justified sample pair and I 2S protocols (I 2S is an industry-standard interface com-monly used by audio codecs, ADCs, and DACs), with two data pins, allowing four left-justified sample pair or I 2S channels (using two stereo devices) per serial port, with a maximum of upto 24 audio channels. The serial ports permit little-endian or big-endian transmission formats and word lengths selectable from 3 bits to 32 bits. For the left-justified sample pair and I 2S modes, data-word lengths are selectable between 8 bits and 32 bits. Serial ports offer selectable synchronization and transmit modes as well as optional µ-law or A-law companding selection on a per channel basis. Serial port clocks and frame syncs can be internally or externally generated.Serial Peripheral (Compatible) InterfaceSerial peripheral interface is an industry-standard synchronous serial link, enabling the ADSP-21262 SPI-compatible port to communicate with other SPI-compatible devices. SPI is anFigure 3.ADSP-21262 Memory MapADSP-21262interface consisting of two data pins, one device select pin, and one clock pin. It is a full-duplex synchronous serial interface, supporting both master and slave modes. The SPI port can operate in a multimaster environment by interfacing with up to four other SPI-compatible devices, either acting as a master or slave device. The ADSP-21262 SPI-compatible peripheral implementation also features programmable baud rates up to 37.5 MHz, clock phases, and polarities. The ADSP-21262 SPI-compatible port uses open drain drivers to support a multimas-ter configuration and to avoid data contention.Parallel PortThe parallel port provides interfaces to SRAM and peripheral devices. The multiplexed address and data pins (AD15–0) can access 8-bit devices with up to 24 bits of address, or 16-bit devices with up to 16 bits of address. In either mode, 8- or 16-bit, the maximum data transfer rate is one-third the core clock speed. As an example, a clock rate of 200 MHz is equivalent to 66M byte/sec, and a clock rate of 150 MHz is equivalent to50M byte/sec.DMA transfers are used to move data to and from internal memory. Access to the core is also facilitated through the paral-lel port register read/write functions. The RD, WR, and ALE (address latch enable) pins are the control pins for the parallel port.TimersThe ADSP-21262 has a total of four timers: a core timer able to generate periodic software interrupts, and three general-pur-pose timers that can generate periodic interrupts and be independently set to operate in one of three modes:•Pulse waveform generation mode•Pulse width count/capture mode•External event watchdog modeThe core timer can be configured to use FLAG3 as a timer expired output signal, and each general-purpose timer has one bidirectional pin and four registers that implement its mode of operation: a 6-bit configuration register, a 32-bit count register, a 32-bit period register, and a 32-bit pulse width register. A sin-gle control and status register enables or disables all three general-purpose timers independently.Program BootingThe internal memory of the ADSP-21262 boots at system power-up from an 8-bit EPROM via the parallel port, an SPI master, an SPI slave, or an internal boot. Booting is determined by the boot configuration (BOOTCFG1–0) pins. Selection of the boot source is controlled via the SPI as either a master or slave device, or it can immediately begin executing from ROM. Phase-Locked LoopThe ADSP-21262 uses an on-chip phase-locked loop (PLL) to generate the internal clock for the core. On power-up, the CLKCFG1-0 pins are used to select ratios of 16:1, 8:1, and 3:1. After booting, numerous other ratios can be selected via soft-ware control. The ratios are made up of software configurable numerator values from 1 to 32 and software configurable divi-sor values of 1, 2, 4, 8, and 16.Power SuppliesThe ADSP-21262 has separate power supply connections for the internal (V DDINT), external (V DDEXT), and analog (A VDD/A VSS) power supplies. The internal and analog supplies must meet the 1.2 V requirement. The external supply must meet the 3.3 V requirement. All external supply pins must be connected to the same power supply.Note that the analog supply pin (A VDD) powers the processor’s internal clock generator PLL. To produce a stable clock, it is rec-ommended that PCB designs use an external filter circuit for the A VDD pin. Place the filter components as close as possible to the A VDD/A VSS pins. For an example circuit, see Figure4. (A recom-mended ferrite chip is the muRata BLM18AG102SN1D). To reduce noise coupling, the PCB should use a parallel pair of power and ground planes for V DDINT and GND. Use wide traces to connect the bypass capacitors to the analog power (A VDD) and ground (A VSS) pins. Note that the A VDD and A VSS pins specified in Figure4 are inputs to the processor and not the analog ground plane on the board—the A VSS pin should connect directly to digital ground (GND) at the chip.TARGET BOARD JTAG EMULATOR CONNECTOR Analog Devices DSP Tools product line of JTAG emulators uses the IEEE 1149.1 JTAG test access port of the ADSP-21262 pro-cessor to monitor and control the target board processor during emulation. Analog Devices DSP Tools product line of JTAG emulators provides emulation at full processor speed, allowing inspection and modification of memory, registers, and proces-sor stacks. The processor’s JTAG interface ensures that the emulator will not affect target system loading or timing.For complete information on Analog Devices’ SHARC DSP Tools product line of JTAG emulator operation, see the appro-priate emulator hardware user’s guide.Figure 4.Analog Power Filter CircuitRev. B|Page 8 of 48|August 2005。
PBSS4350Z中文规格书
Package
Name
PBSS4350Z
SC-73
Description
plastic surface-mounted package with increased heatsink; 4 leads
Version SOT223
7. Marking
Table 4. Marking codes Type number PBSS4350Z
2 / 12
Nexperia
PBSS4350Z
50 V low VCEsat NPN transistor
12. Soldering
1.3 1.2 (4×) (4×)
7 3.85 3.6 3.5
0.3
4
3.9 6.1 7.65
1
2
3
2.3
2.3
1.2 (3×)
1.3 (3×)
6.15
Fig. 9. Reflow soldering footprint for SC-73 (SOT223)
8.9
6.7
1.9 4
6.2
8.7
1
2
3
1.9 (3×)
2.7
2.7
1.1
1.9 (2×)
Fig. 10. Wave soldering footprint for SC-73 (SOT223)
solder lands solder resist solder paste occupied area Dimensions in mm
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
PBSS4140T中文资料
MLD662
102 handbook, halfpage RCEsat (Ω)
MLD663
102
10
(2)
(3) (1) (2)
10
1
(3)
1
1
10
102
103
IC (mA)
104
10−1 10−1
1
10
10−2
10−3 10−4 IC (mA)
IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS4140T 40 V, 1A NPN low VCEsat (BISS) transistor
Product specification Supersedes data of 2001 Jul 13 2004 Mar 16
Philips Semiconductors
Product specification
40 V, 1A NPN low VCEsat (BISS) transistor
FEATURES • Low collector-emitter saturation voltage • High current capabilities. • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5140T. MARKING TYPE NUMBER PBSS4140T Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION TYPE NUMBER PBSS4140T PACKAGE NAME − DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) ZT*
Z64S4440M中文资料(Aerovox)中文数据手册「EasyDatasheet - 矽搜」
交流电动机运行电容器
ZeMax TM - 铝合金外壳
AEROMET II - 塑料盒
SuperMet - 金属外壳
芯片中文手册,看全文,戳
目录
AEROMET II规格(系列M型).......................................... .................................... 3 SuperMet & ZeMax TM 规格(系列Z型)............................................ .................. 4 部分编号系统.............................................................................................................五 AEROMET II评分表(单台容量)系列M型....................................... ........... 6 AEROMET II评分表(双功能)系列型号M ....................................... ............. 8 SuperMet评分表(单台容量)系列Z型........................................ ............... 9 SuperMet评分表(双容量)系列Z型........................................ .............. 11 ZeMax TM 评分表(单台容量)系列Z型......................................... ........... 13 AEROMET II机械尺寸.............................................. .......................................... 15 SuperMet机械尺寸............................................... ........................................... 16 ZeMax TM 机械Dimensions............................................................................................17 附件 - 安装硬件.............................................. ............................................ 18
PBSS4540X中文资料
Fig.2 Power derating curves.
2004 Nov 04
4
Philips Semiconductors
Product specification
40 V, 5 A NPN low VCEsat (BISS) transistor
THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER from junction to ambient in free air notes 1 and 2 note 2 note 3 note 4 note 5 Rth(j-s) Notes 1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. from junction to soldering point CONDITIONS
Philips Semiconductors
Product specification
40 V, 5 A NPN low VCEsat (BISS) transistor
FEATURES • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 4 A • High efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers (e.g. fan and motor) • Strobe flash units for DSC and mobile phones • Inverter applications (e.g. TFT displays) • Power switch for LAN and ADSL systems • Medium power DC-to-DC conversion • Battery chargers. DESCRIPTION NPN low VCEsat transistor in a medium power SOT89 (SC-62) package. PNP complement: PBSS5540X. MARKING TYPE NUMBER PBSS4540X Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4540X SC-62 DESCRIPTION MARKING CODE(1) *1B
ADF4351中文资料代替4350
概述
ADF4351结合外部环路滤波器和外部参考频率使用时,可 实现小数N分频或整数N分频锁相环(PLL)频率合成器。
ADF4351具有一个集成电压控制振荡器(VCO),其基波输 出频率范围为2200 MHz至4400 MHz。此外,利用1/2/4/8/ 16/32/64分频电路,用户可以产生低至35 MHz的RF输出频 率。对于要求隔离的应用,RF输出级可以实现静音。静音 功能既可以通过引脚控制,也可以通过软件控制。同时提 供辅助RF输出,且不用时可以关断。
RFOUTA+ RFOUTA– PDBRF RFOUTB+ RFOUTB–
MULTIPLEXER
09800-001
MULTIPLEXER
ADF4351
CE
AGND
DGND
CPGND
SDGND AGNDVCO
图1.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rightsofthirdpartiesthatmayresultfromitsuse.Speci cationssubjecttochangewithoutnotice.No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
PBSS5350T,215;中文规格书,Datasheet资料
Product data sheet Supersedes data of 2002 Aug 082004 Jan 09DISCRETE SEMICONDUCTORS50 V; 3 A NPN low V CEsat(BISS) transistorPBSS4350TFEATURES•Low collector-emitter saturation voltage V CEsat and corresponding low R CEsat•High collector current capability•High collector current gain•Improved efficiency due to reduced heat generation.APPLICATIONS•Power management applications•Low and medium power DC/DC convertors •Supply line switching•Battery chargers•Linear voltage regulation with low voltage drop-out (LDO).DESCRIPTIONNPN low V CEsat transistor in a SOT23 plastic package. PNP complement: PBSS5350T.MARKINGNote1.* = p: Made in Hong Kong.* = t: Made in Malaysia.* = W: Made in China.QUICK REFERENCE DATA PINNINGTYPE NUMBER MARKING CODE(1) PBSS4350T ZC*SYMBOL PARAMETER MAX.UNIT V CEO collector-emitter voltage50VI C collector current (DC)2AI CRP repetitive peak collectorcurrent3AR CEsat equivalent on-resistance130mΩPIN DESCRIPTION1base2emitter3collectorORDERING INFORMATIONTYPE NUMBERPACKAGENAME DESCRIPTION VERSIONPBSS4350T−plastic surface mounted package; 3 leads SOT2350 V; 3 A NPN low V CEsat (BISS) transistorPBSS4350TLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).Notes1.Operated under pulsed conditions: pulse width t p ≤ 100 ms; duty cycle δ ≤ 0.25.2.Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.3.Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm 2.4.Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm 2.THERMAL CHARACTERISTICS Notes1.Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.2.Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm 2.3.Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm 2.4.Operated under pulsed conditions: pulse width t p ≤ 100 ms; duty cycle δ ≤ 0.25.SYMBOL PARAMETERCONDITIONSMIN.MAX.UNITV CBO collector-base voltage open emitter −50V V CEO collector-emitter voltage open base −50V V EBO emitter-base voltage open collector−5V I C collector current (DC)−2A I CRP repetitive peak collector current note 1−3A I CM peak collector current single peak−5A I B base current (DC)−0.5AP tottotal power dissipationT amb ≤ 25 °C; note 2−300mW T amb ≤ 25 °C; note 3−480mW T amb ≤ 25 °C; note 4−540mW T amb ≤ 25 °C; notes 1 and 2− 1.2W T stg storage temperature −65+150°C T j junction temperature−150°C T amb operating ambient temperature−65+150°CSYMBOL PARAMETERCONDITIONSVALUE UNIT R th(j-a)thermal resistance from junction to ambientin free air; note 1417K/W in free air; note 2260K/W in free air; note 3230K/W in free air; notes 1 and 4104K/W50 V; 3 A NPN low V CEsat (BISS) transistorPBSS4350TCHARACTERISTICST amb = 25 °C unless otherwise specified.Note1.Pulse test: t p ≤ 300 μs; δ ≤ 0.02.SYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNIT I CBO collector-base cut-off current I E = 0; V CB = 50 V−−100nA I E = 0; V CB = 50 V; T j = 150 °C−−50μA I EBO emitter-base cut-off current I C = 0; V EB = 5 V −−100nAh FEDC current gainI C = 100 mA; V CE = 2 V 300−−I C = 500 mA; V CE = 2 V 300−−I C = 1 A; V CE = 2 V; note 1300−−I C = 2 A; V CE = 2 V; note 1200−−I C = 3 A; V CE = 2 V; note 1100−−V CEsatcollector-emitter saturation voltageI C = 500 mA; I B = 50 mA −−80mV I C = 1 A; I B = 50 mA −−160mV I C = 2 A; I B = 100 mA; note 1−−280mV I C = 2 A; I B = 200 mA; note 1−−260mV I C = 3 A; I B = 300 mA; note 1−−370mV R CEsat equivalent on-resistance I C = 2 A; I B = 200 mA; note 1−100130m ΩV BEsat base-emitter saturation voltageI C = 2 A; I B = 100 mA; note 1−− 1.1V I C = 3 A; I B = 300 mA; note 1−− 1.2V V BEon base-emitter turn-on voltage I C = 1 A; V CE = 2 V; note 1 1.2−−V f T transition frequency I C = 100 mA; V CE = 5 V; f = 100 MHz100−−MHz C c collector capacitanceI E = I e = 0; V CB = 10 V; f = 1 MHz−−25pF50 V; 3 A NPN low V CEsat (BISS) transistor PBSS4350T50 V; 3 A NPN low V CEsat (BISS) transistor PBSS4350T50 V; 3 A NPN low V CEsat (BISS) transistor PBSS4350T50 V; 3 A NPN low V CEsat (BISS) transistor PBSS4350T PACKAGE OUTLINE50 V; 3 A NPN low V CEsat (BISS) transistorPBSS4350TDATA SHEET STATUSNotes1.Please consult the most recently issued document before initiating or completing a design.2.The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet at URL . DOCUMENT STATUS (1)PRODUCT STATUS (2)DEFINITIONObjective data sheet Development This document contains data from the objective specification for product development.Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet ProductionThis document contains the product specification.DISCLAIMERSGeneral ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties,expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to informationpublished in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s own risk.Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at /profile/terms, including those pertaining to warranty, intellectual property rightsinfringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.Export control ⎯ This document as well as the item(s) described herein may be subject to export controlregulations. Export might require a prior authorization from national authorities.Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.NXP SemiconductorsCustomer notificationThis data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outlinedrawings which were updated to the latest version.Contact informationFor additional information please visit: For sales offices addresses send e-mail to: salesaddresses@© NXP B.V. 2009All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Printed in The Netherlands R75/02/pp10 Date of release: 2004 Jan 09 Document order number: 9397 750 12437分销商库存信息: NXPPBSS5350T,215。
零件喷漆性能要求
GM4350 零件喷漆性能要求1.范围1.1材料描述:这个标准包括实验室对喷漆的各种等级的检测要求,通常用于汽车零部件表面喷漆。
这个标准不包括表面要求和加工参数(不包括:3.1.1部分),而在材料规格(998XXXX)里面有规定,并且不包括电泳后用于连接真空堆积金属涂料和热处理涂料。
对电泳塑料件的化学成分,表面处理和喷漆都应该按照通用批准的零件表面处理要求(APOPS),当对电泳做测试的时候,至少要对3个样品进行检测,从每一个零件中获得不同的数据。
来自装配车间的初始和最终电泳零件必须能够接受规定的高层表面电泳要求和符合所有的检测要求和标准1.2特殊运用以下几个例子表明了一些过去使用的等级标准和现在使用的标准。
咨询你们的材料工程师,请求帮助指出适用的等级。
特殊运用等级如下:A336-xxx*. 通常用于汽车底盘&外观零件腐蚀,例如:没有电镀的冷扎钢,预涂层钢,压铸锌、铝、镁。
有时用在金属引擎零件上。
A96. 以前用于汽车外观的零件都在明亮的表面上喷漆就像不锈钢,阳极电镀的铝,镀铬金属或塑胶件。
但值得注意的是在明亮的表面上镀上去的漆通常不能保持太久,所以通过了A96的要求并不能保证满足这方面的性能要求。
因此,指定在明亮的底层镀漆是不可取的。
A0. 通常用在汽车外观的零件上,包括塑料件和其它非金属物质.C96-xxx*. 通常用在汽车尾部行李箱的一些可看得见的金属零件和一些暴露在潮湿空气中的零件.C24.通常用在汽车内部的不易暴露在潮湿空气中的金属件.C0.通常用在汽车内部的塑料件和其它非金属件.注:xxx*关于检验等级,在表格4里面有标明.1.3备注1.3.1这里的检验规范用于定期质量管理(第3部分)和电泳过程(第3部分和附录A).附加的检测要求必须在等级编码后面加Z后缀,并且附加的检测要求必须在技术图纸上或材料规格上说明.在表1里面进行举例说明.表格1:加“Z”字尾的例子在有后缀Z的所有等级里面,相近材料的兼容性检测要求必须在技术图纸上说明。
OPA4350UA中文资料
SO-14
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111
TA = –40°C to +85°C IO = 0 IO = 0
±150
±4 40
0.15
±500 ±1
150 175
±0.5
±10
See Typical Performance Curve
±0.5
±10
4 7 5 4
–0.1
(V+)+0.1
66
84
76
90
74
1013 || 2.5 1013 || 6.5
100
122
100
100
120
100
38 22 0.22 0.5 0.1 0.0006 0.17 0.17
TA = –40°C to +85°C
TA = –40°C to +85°C Output Current Short-Circuit Current Capacitive Load Drive
POWER SUPPLY Operating Voltage Range Minimum Operating Voltage Quiescent Current (per amplifier)
High-Speed, Single-Supply, Rail-to-Rail OPERATIONAL AMPLIFIERS MicroAmplifier ™ Series
FUJI XEROX DocuPrint C4350打印机 说明书
本小册子中提及的其他名称都是相应公司的商标。
尽管所载信息在打印时正确无误,富士施乐亚太区保留随时更改所述机器规格参数而不另外通知的权利。
视产品购买所在国家或地区,规格参数、选件名称和供货情况可能会不尽相同。
“xerox”及连接的球体图形是施乐公司在美国和/或其它国家的标识或注册商标。
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OZ964S中文资料
ORDERING INFORMATION
Part Number OZ964S OZ964SN OZ964IS OZ964ISN OZ964G OZ964GN OZ964IG OZ964IGN OZ964D OZ964DN Temp Range
0° C to 70° C 0° C to 70° C -40° C to +85°C -40° C to +85°C 0° C to 70° C 0° C to 70° C -40° C to +85°C -40° C to +85°C 0° C to 70° C 0° C to 70° C
元器件交易网
OZ964
Change Summary
Controlled Recipient #101461 printed on 10/25/2004. Updates will be provided to registered recipients.
CHANGES
No. 1 2 3 4 5 6 7 Applicable Section Title Ordering Information General Description Functional Block Diagram Description Reference Application Circuit Package information Throughout data sheet Description Change the title to read ‘Phase-Shift PWM Controller’ Add OZ964GN, OZ964IG, OZ964IGN, OZ964D & OZ964DN st Add 1 paragraph ‘OZ964 is a high…LCD.’ Add 1 paragraph 1 sentence ‘Specific DC/CD…’ Add DC/DC Reference Application Circuit Correct 20 Pin SOIC 300mil drawing Miscellaneous corrections
Fabrication Guidelines- RO4400 series prepregs. RO4350B , RO4350F prepregs
Processing Guidelines for RO4450B ™ and RO4450F ™ PrepregsPROCESSING GUIDELINES:STORAGE:Upon receipt, all prepreg should be immediately moved from the receiving area into a controlledenvironment. Proper storage conditions would include temperatures between 10°C and 30°C (50°Fand 85°F) and protection against exposure to catalytic conditions such as high radiation and ultraviolet light. The prepreg should not be stored under vacuum. It is best to store the prepreg in its heat sealedpackaging, partially used packages should be resealed with tape.When properly stored, prepreg properties will be maintained for 12 months from the shipment date.A “fi rst-in, fi rst-out” inventory system is recommended.UNPACKING:RO4400™ prepregs are packaged in a dust-free environment, but will collect dust and debris from counter tops. We recommend counter tops be cleaned prior to unpackaging the prepreg. Plastic slip-sheeting has been provided to ease separation of individual plies and to shield the prepreg from contamination until it is ready for use.TOOLING:Tooling holes can be punched, drilled, or cut. Thin entry and exit materials may be needed to support the prepreg through the tooling hole formation process. The slip-sheeting should remain in place through tool-ing as it will shield the prepreg from contamination and should eliminate the risk of individual plies fusing together as the tooling holes are formed.MULTI-LAYER PREPARATION:Each ply of RO4450B™ and RO4450F™ 4-mil prepregwill bond to a nominal 0.004” (0.101mm) thickness,and each ply of RO4450B 3.6-mil prepreg will bond toa nominal 0.0036” (0.091mm) when recommendedbonding parameters are used. The actual thicknesseach ply will add to a multi-layer construction isdependent upon the weight and distribution ofcopper on the innerlayer surfaces.Rogers recommends the use of two or more plies ofprepreg between metal layers, and that the properpress cycle parameters are used per our guidelines.Processing Guidelines RO4400 Processing Guidelines Advanced Circuit Materials Division 100 S. Roosevelt Avenue Chandler, AZ 85226Tel: 480-961-1382, Fax: The world runs better with Rogers.®Any deviation from these recommendations can lead to poor fi ll performance or electrical failures, especially in high-speed digital/high density designs. If the design requires single-ply usage between metal layers, the user must ensure the proper testing protocol is in place to evaluate fi ll/fl ow and electrical performance. Contact your local technical services representative for questions or assistance with these guidelines.Also contact your local technical services representative for designs using more than six metal layers, or 35 micron foil on both sides, or when bonding against FR-4 cores.Etched dielectric surfaces should not be mechanically or chemically altered prior to multilayer bonding. Innerlayer metal surfaces should be oxide treated to promote improved mechanical adhesion. Reduced black oxide, brown oxide, and additive or subtractive oxide alternatives have been successfully applied. Inner-layers should be baked for 15 to 30 minutes at 115°C (239°F) to 125°C (257°F) just prior to preparing the multi-layer package for bonding.Core bonded constructions are preferred, but foil bonded outer-layers are an option with RO4400 prepregs. Rogers’ qualifi ed and recommended copper foil is HTE-TWS available from Circuit Foils. Sheeted foils are available through the manufacturers or through the sheeting service listed below:Circuit Foil America 625 rue du Luxembourg Granby J2J 2S9 - Canada Phone (+1) 450-770-8558 Fax: (+1) 450-770-8022 Contact Information:USA CustomersCopper Rolls - petey.decarlo@(fax # +1-215-887-6911)(USA)Copper Sheets - carmen.pignon@ (fax # +1-450-405-4622)(Canada)Europe and AsiaCopper Rolls and sheets - paul.jung@ (fax # +11 352 95 75 51 249)(Luxembourg)RO4450B and RO4450F prepregs allow a rapid ramp to 107°C (225°F), a 2.8°C - 4.0°C/Min (5°F-7°F) ramp rate between 107°C (225°F) and 121°C (250°F), and a maximum 2.2°C/Min (4°F/min) from 121°C (250°F) to 177°C (350°F). The full pressure of 400 psi should be used regardless of vacuum assistance potential, and lengthy (>5 minutes) draw downs should be avoided. Pressure should be applied before package temperature exceeds 38°C (100°F). Transfer to a cooling press is allowed after a 60 minute dwell at 177°C (350°F). The graph shown provides an optimum temperature and pressure profi le for bonding RO4450B and RO4450F prepregs. The tem-perature profi le can be matched using an in-hot process. Time vs. temperature trials may be required to defi ne requirements for lagging materials.Special Bonding Note: The RO4450B and RO4450F prepreg resin system is at its lowest viscosity at temperatures between 100°C (210°F) and 120°C (250°F). High layer count MLB’s, designs with buried metal layers thicker than ½ oz. copper, and constructions using single plies of RO4450B and RO4450F prepreg will benefi t by spending 20 minutes in the reduced viscosity window. This can be accomplished by ramping at a rate of 1°C/Min ( 2°F/Min) or by dwelling at 115°C (240°F) for 20 minutes. Should the latter approach be chosen, the ramp rates from RTto 115°C (240°F) and from 115°C-175°C (240°F to 350°F) can be 2.8°C-4.0°C/Min (5°F-7°F/Min). Care should be taken to not exceed 120°C (250°F) during the 20 minute dwell.Page 2 of 4Page 3 of 4Cycle time:2 hoursOuterlayer and PTH Processing: Processing guidelines for RO4003C ™, RO4350B ™, RO4360™ and RO4000® LoPro ™ double-sided circuits are applicable to RO4000 multi-layer boards. However, the multi-layer constructions will require desmear. CF4/O2 plasma and alkaline-permanganate processes used to desmear high Tg(170°C/338°F) FR-4 materials have been found to work well with RO4000 multi-layers. While desmear may berequired, etchback of the resin system is not recommended.Expected visual appearance in a cross section of RO4000 LoPro Laminates.Visual comparison of RO4000 LoPro laminates and traditional RO4000 cores in multi-layer constructions.The information contained in this data sheet and processing guide is intended to assist you in designing with Rogers’ circuit materials and prepreg. It is not intended to and does not create any warranties, express or implied, including any warranty of merchantability or fi tness for a particular purpose or that the results shown on this data sheet and processing guide will be achieved by a user for a particular purpose. The user is responsible for determining the suitability of Rogers’ circuit materials and prepreg for each application. Prolonged exposure in an oxidative environment may cause changes to the dielectric properties of hydrocarbon ba sed materials. The rate of change increases at higher temperatures and is highly dependent on the circuit design. Although Roger s’ high frequency materials have been used successfully in innumerable applications and reports of oxidation resulting in performanc e problems are extremely rare, Rogers recommends that the customer evaluate each material and design combination to determin e fi tness for use over the entire life of the end productThese commodities, technology and software are exported from the United States in accordance with the Export A dministration regu-lations. Diversion contrary to U.S. law prohibited.The world runs better with Rogers. and the Rogers’ logo are licensed trademarks of Rogers Corporation.RO4000, RO4400, RO4003C, RO4350B, RO4360 RO4450B, RO4450F and LoPro are licensed trademarks of Rogers Corp oration.© 1999, 2003, 2004, 2005, 2006, 2007, 2008, 2009, 2010, 2011 Rogers Corporation, Printed in U.S.A, All rights reserved.Revised 02/14/2011 0937-0211-CC Publication #92-005。
NXP Semiconductors PBSS5350SS 数据手册
1.Product profile1.1General descriptionPNP/PNP double low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.1.2FeaturesI Low collector-emitter saturation voltage V CEsat I High collector current capability I C and I CM I High collector current gain (h FE ) at high I C I High efficiency due to less heat generationISmaller required Printed-Circuit Board (PCB) area than for conventional transistors1.3ApplicationsI Dual low power switches (e.g. motors, fans)I Automotive1.4Quick reference data[1]Pulse test: t p ≤300µs;δ≤0.02.PBSS5350SS50 V , 2.7 A PNP/PNP low V CEsat (BISS) transistorRev. 01 — 3 April 2007Product data sheetTable 1.Product overviewType numberPackage NPN/PNP complement NPN/NPN complement NXPName PBSS5350SSSOT96-1SO8PBSS4350SPNPBSS4350SSTable 2.Quick reference dataSymbol Parameter Conditions Min Typ Max Unit Per transistor V CEO collector-emitter voltage open base --−50V I C collector current --−2.7A I CM peak collector current single pulse;t p ≤1ms --−5A R CEsatcollector-emittersaturation resistanceI C =−2A;I B =−200mA[1]-95140m Ω查询PBSS4350SPN供应商2.Pinning information3.Ordering information4.Marking5.Limiting valuesTable 3.PinningPin Description Simplified outline Symbol1emitter TR12base TR13emitter TR24base TR25collector TR26collector TR27collector TR18collector TR14518006aaa97687651234TR1TR2Table 4.Ordering informationType numberPackage NameDescriptionVersion PBSS5350SSSO8plastic small outline package; 8leads; body width 3.9mmSOT96-1Table 5.Marking codesType number Marking code PBSS5350SS5350SSTable 6.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditions Min Max Unit Per transistorV CBO collector-base voltage open emitter -−50V V CEO collector-emitter voltage open base -−50V V EBO emitter-base voltage open collector -−5V I C collector current -−2.7A I CM peak collector current single pulse;t p ≤1ms-−5A I B base current-−0.5A P tottotal power dissipationT amb ≤25°C[1]-0.55W [2]-0.87W [3]-1.43W[1]Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint.[2]Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for collector 1cm 2.[3]Device mounted on a ceramic PCB, Al 2O 3, standard footprint.Per device P tottotal power dissipationT amb ≤25°C[1]-0.75W [2]- 1.2W [3]-2W T j junction temperature -150°C T amb ambient temperature −65+150°C T stgstorage temperature−65+150°C(1)Ceramic PCB, Al 2O 3, standard footprint (2)FR4PCB, mounting pad for collector 1cm 2(3)FR4PCB, standard footprintFig 1.Per device: Power derating curvesTable 6.Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit T amb (°C)−751751252575−25006aaa9671.01.50.52.02.5P tot (W)0(1)(2)(3)6.Thermal characteristics[1]Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint.[2]Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for collector 1cm 2.[3]Device mounted on a ceramic PCB, Al 2O 3, standard footprint.Table 7.Thermal characteristics Symbol ParameterConditions Min Typ Max Unit Per transistorR th(j-a)thermal resistance from junction to ambientin free air[1]--227K/W [2]--144K/W [3]--87K/W R th(j-sp)thermal resistance from junction to solder point --40K/WPer device R th(j-a)thermal resistance from junction to ambientin free air[1]--167K/W [2]--104K/W [3]--63K/WFR4PCB, standard footprintFig 2.Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;typical values006aaa809101102103Z th(j-a)(K/W)10−110−51010−210−410210−1t p (s)10−310310.0100.020.050.10.20.330.50.751.0duty cycle =FR4PCB, mounting pad for collector 1cm 2Fig 3.Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;typical valuesCeramic PCB, Al 2O 3, standard footprintFig 4.Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;typical values006aaa810101102103Z th(j-a)(K/W)10−110−51010−210−410210−1t p (s)10−31031duty cycle =0.010.020.050.10.20.330.50.751.0006aaa811t p (s)10−410210310110−310−110−210210103Z th(j-a)(K/W)10.020.050.10.20.330.50.751.000.01duty cycle =7.Characteristics[1]Pulse test: t p ≤300µs;δ≤0.02.Table 8.CharacteristicsT amb =25°C unless otherwise specified.Symbol Parameter Conditions Min Typ Max Unit Per transistor I CBOcollector-base cut-off current V CB =−50V; I E =0A --−100nA V CB =−50V; I E =0A;T j =150°C --−50µA I CES collector-emitter cut-off current V CE =−50V; V BE =0V --−100nA I EBO emitter-base cut-off current V EB =−5V; I C =0A --−100nAh FEDC current gainV CE =−2V; I C =−100mA 200340-V CE =−2V; I C =−500mA [1]200290-V CE =−2V; I C =−1A [1]180250-V CE =−2V; I C =−2A [1]130180-V CE =−2V; I C =−2.7A[1]95135-V CEsatcollector-emitter saturation voltage[1]I C =−0.5A; I B =−50mA -−60−90mV I C =−1A; I B =−50mA -−125−180mV I C =−2A; I B =−100mA -−225−320mV I C =−2A; I B =−200mA -−190−280mV I C =−2.7A; I B =−270mA-−255−370mV R CEsat collector-emitter saturation resistance I C =−2A; I B =−200mA [1]-95140m ΩV BEsatbase-emittersaturation voltage[1]I C =−2A; I B =−100mA -−0.95−1.1V I C =−2.7A; I B =−270mA-−1−1.2V V BEon base-emitter turn-on voltage V CE =−2V; I C =−1A [1]-−0.8−1.2V t d delay time V CC =−10V; I C =−2A;I Bon =−100mA;I Boff =100mA-9-ns t r rise time -54-ns t on turn-on time -63-ns t s storage time -190-ns t f fall time -50-ns t off turn-off time-240-ns C ccollector capacitance V CB =−10V; I E =i e =0A;f =1MHz-2535pFV CE =−2V (1)T amb =100°C (2)T amb =25°C (3)T amb =−55°CT amb =25°CFig 5.DC current gain as a function of collectorcurrent; typical valuesFig 6.Collector current as a function ofcollector-emitter voltage; typical valuesV CE =−2V (1)T amb =−55°C (2)T amb =25°C (3)T amb =100°CI C /I B =20(1)T amb =−55°C (2)T amb =25°C (3)T amb =100°CFig 7.Base-emitter voltage as a function of collectorcurrent; typical values Fig 8.Base-emitter saturation voltage as a function ofcollector current; typical values006aaa977200400600h FE0I C (mA)−10−1−104−103−1−102−10(1)(2)(3)V CE (V)0−2.0−1.6−0.8−1.2−0.4006aaa978−2−3−1−4−5I C (A)0I B (mA) = −140−126−112−98−84−70−56−14−28−42006aaa979−0.4−0.8−1.2V BE (V)0I C (mA)−10−1−104−103−1−102−10(1)(2)(3)006aaa980−0.6−1.0−1.4V BEsat (V)−0.2I C (mA)−10−1−104−103−1−102−10(1)(2)(3)I C /I B =20(1)T amb =100°C (2)T amb =25°C (3)T amb =−55°CT amb =25°C (1)I C /I B =100(2)I C /I B =50(3)I C /I B =10Fig 9.Collector-emitter saturation voltage as afunction of collector current; typical valuesFig 10.Collector-emitter saturation voltage as afunction of collector current; typical valuesI C /I B =20(1)T amb =100°C (2)T amb =25°C (3)T amb =−55°CT amb =25°C (1)I C /I B =100(2)I C /I B =50(3)I C /I B =10Fig 11.Collector-emitter saturation resistance as afunction of collector current; typical values Fig 12.Collector-emitter saturation resistance as afunction of collector current; typical values006aaa981−10−1−10−2−1V CEsat (V)−10−3I C (mA)−10−1−104−103−1−102−10(1)(2)(3)006aaa982−10−1−10−2−1V CEsat (V)−10−3I C (mA)−10−1−104−103−1−102−10(1)(2)(3)I C (mA)−10−1−104−103−1−102−10006aaa983110−110210103R CEsat (Ω)10−2(1)(2)(3)I C (mA)−10−1−104−103−1−102−10006aaa984110−110210103R CEsat (Ω)10−2(1)(2)(3)8.Test informationFig 13.BISS transistor switching time definitionV CC =−10V; I C =−2A; I Bon =−100mA; I Boff =100mAFig 14.Test circuit for switching times006aaa266−I Bon (100 %)−I B input pulse(idealized waveform)−I Boff90 %10 %−I C (100 %)−I C t dt on90 %10 %t routput pulse(idealized waveform)t ftt st offR CR2R1DUTmgd624V oR B(probe)450 Ω(probe)450 ΩoscilloscopeoscilloscopeV BBV IV CC9.Package outline10.Packing information[1]For further information and the availability of packing methods, see Section 14.Fig 15.Package outline SOT96-1 (SO8)03-02-18Dimensions in mm1.00.41.75pin 1 index0.490.360.250.195.04.84.03.86.25.81.27Table 9.Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]Type number Package DescriptionPacking quantity 10002500PBSS5350SSSOT96-18mm pitch, 12mm tape and reel-115-11811.SolderingFig 16.Reflow soldering footprint SOT96-1 (SO8)Fig 17.Wave soldering footprint SOT96-1 (SO8)sot096-1_froccupied areasolder lands Dimensions in mm placement accuracy ± 0.25 1.300.60 (8×)1.27 (6×)4.00 6.605.507.00sot096-1_fwsolder resistoccupied areasolder lands Dimensions in mm board directionplacement accurracy ± 0.25 4.005.50 1.300.3 (2×)0.60 (6×)1.20 (2×)1.27 (6×)7.006.60enlarged solder land12.Revision historyTable 10.Revision historyDocument ID Release date Data sheet status Change notice Supersedes PBSS5350SS_120070403Product data sheet--13.Legal information13.1Data sheet status[1]Please consult the most recently issued document before initiating or completing a design.[2]The term ‘short data sheet’ is explained in section “Definitions”.[3]The product status of device(s)described in this document may have changed since this document was published and may differ in case of multiple devices.The latest product status information is available on the Internet at URL .13.2DefinitionsDraft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequences of use of such information.Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s)and title.A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.13.3DisclaimersGeneral —Information in this document is believed to be accurate andreliable.However,NXP Semiconductors does not give any representations or warranties,expressed or implied,as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and without notice.This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use —NXP Semiconductors products are not designed,authorized or warranted to be suitable for use in medical, military, aircraft,space or life support equipment, nor in applications where failure ormalfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage.NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Limiting values —Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134)may cause permanent damage to the device.Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in theCharacteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale,as published at /profile/terms , including those pertaining to warranty,intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant,conveyance or implication of any license under any copyrights,patents or other industrial or intellectual property rights.13.4TrademarksNotice:All referenced brands,product names,service names and trademarks are the property of their respective owners.14.Contact informationFor additional information, please visit:For sales office addresses, send an email to:**********************Document status [1][2]Product status [3]DefinitionObjective [short] data sheet Development This document contains data from the objective specification for product development.Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.Product [short] data sheetProductionThis document contains the product specification.15.Contents1Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 11.1General description. . . . . . . . . . . . . . . . . . . . . . 11.2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4Quick reference data. . . . . . . . . . . . . . . . . . . . . 12Pinning information. . . . . . . . . . . . . . . . . . . . . . 23Ordering information. . . . . . . . . . . . . . . . . . . . . 24Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 26Thermal characteristics. . . . . . . . . . . . . . . . . . . 47Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 68Test information. . . . . . . . . . . . . . . . . . . . . . . . . 99Package outline . . . . . . . . . . . . . . . . . . . . . . . . 1010Packing information. . . . . . . . . . . . . . . . . . . . . 1011Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1112Revision history. . . . . . . . . . . . . . . . . . . . . . . . 1213Legal information. . . . . . . . . . . . . . . . . . . . . . . 1313.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . 1313.2Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1313.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 1313.4T rademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 1314Contact information. . . . . . . . . . . . . . . . . . . . . 1315Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.© NXP B.V.2007.All rights reserved.For more information, please visit: Forsalesofficeaddresses,pleasesendanemailto:**********************Date of release: 3 April 2007。
PBSS4350Z,135;中文规格书,Datasheet资料
Product data sheet Supersedes data of 2003 Jan 202003 May 1350 V low V CEsat NPN transistor PBSS4350ZFEATURES•Low collector-emitter saturation voltage•High collector current capability: I C and I CM•High collector current gain (h FE) at high I C•Higher efficiency leading to less heat generation•Reduced PCB area requirements compared to DPAK.APPLICATIONS•Power management–DC/DC converters–Supply line switching–Battery charger–Linear voltage regulation (LDO).•Peripheral drivers–Driver in low supply voltage applications, e.g. lamps, LEDs–Inductive load driver, e.g. relays, buzzers, motors.DESCRIPTIONNPN low V CEsat transistor in a SOT223 plastic package. PNP complement: PBSS5350Z.MARKINGTYPE NUMBER MARKING CODE PBSS4350Z PB4350PINNINGPIN DESCRIPTION1base2collector3emitter4collectorQUICK REFERENCE DATASYMBOL PARAMETER MAX.UNIT V CEO collector-emitter voltage50VI CM peak collector current5AR CEsat equivalent on-resistance<145mΩ50 V low V CEsat NPN transistor PBSS4350ZLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT V CBO collector-base voltage open emitter−60VV CEO collector-emitter voltage open base−50VV EBO emitter-base voltage open collector−6VI C collector current (DC)−3AI CM peak collector current−5AI BM peak base current−1AP tot total power dissipation T amb≤ 25 °C; notes 1 and 3− 1.35WT amb≤ 25 °C; notes 2 and 3−2WT stg storage temperature−65+150°CT j junction temperature−150°CT amb operating ambient temperature−65+150°C Notes1.Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.2.Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.3.For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associatedHandbook”.THERMAL CHARACTERISTICSSYMBOL PARAMETER CONDITIONS VALUE UNITR th j-a thermal resistance from junction to ambient in free air; notes 1 and 392K/Win free air; notes 2 and 362.5K/W Notes1.Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.2.Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.3.For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associatedHandbook”.50 V low V CEsat NPN transistorPBSS4350ZCHARACTERISTICST amb = 25 °C unless otherwise specified.Note1.Pulse test: t p ≤ 300 μs; δ ≤ 0.02.SYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNIT I CBO collector-base cut-off current V CB = 50 V; I E = 0−−100nA V CB = 50 V; I E = 0; T j = 150 °C −−50μA I EBO emitter-base cut-off current V EB = 5 V; I C = 0−−100nAh FEDC current gainV CE = 2 V; I C = 500 mA 200−−V CE = 2 V; I C = 1 A; note 1200−−V CE = 2 V; I C = 2 A; note 1100−−V CEsatcollector-emitter saturation voltageI C = 500 mA; I B = 50 mA −−90mV I C = 1 A; I B = 50 mA −−170mV I C = 2 A; I B = 200 mA; note 1−−290mV R CEsat equivalent on-resistance I C = 2 A; I B = 200 mA; note 1−110<145m ΩV BEsat base-emitter saturation voltage I C = 2 A; I B = 200 mA; note 1−− 1.2V V BEon base-emitter turn-on voltage V CE = 2 V; I C = 1 A; note 1−− 1.1V f T transition frequency I C = 100 mA; V CE = 5 V; f = 100 MHz 100−−MHz C c collector capacitanceV CB = 10 V; I E = I e = 0; f = 1 MHz−−30pF50 V low V CEsat NPN transistor PBSS4350Z50 V low V CEsat NPN transistor PBSS4350Z50 V low V CEsat NPN transistor PBSS4350Z PACKAGE OUTLINE50 V low V CEsat NPN transistorPBSS4350ZDATA SHEET STATUSNotes1.Please consult the most recently issued document before initiating or completing a design.2.The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet at URL . DOCUMENT STATUS (1)PRODUCT STATUS (2)DEFINITIONObjective data sheet Development This document contains data from the objective specification for product development.Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet ProductionThis document contains the product specification.DISCLAIMERSGeneral ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties,expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to informationpublished in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s own risk.Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at /profile/terms, including those pertaining to warranty, intellectual property rightsinfringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.Export control ⎯ This document as well as the item(s) described herein may be subject to export controlregulations. Export might require a prior authorization from national authorities.Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.NXP SemiconductorsCustomer notificationThis data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.Contact informationFor additional information please visit: For sales offices addresses send e-mail to: salesaddresses@© NXP B.V. 2009All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Printed in The Netherlands 613514/03/pp9 Date of release: 2003 May 13 Document order number: 9397 750 11057分销商库存信息: NXPPBSS4350Z,135。
philips PBSS4350D NPN transistor 数据手册
查询PBSS4350D供应商DATA SHEEThandbook, halfpageM3D302PBSS4350DNPN transistorProduct specification2000Mar08NPN transistorPBSS4350DFEATURES•High current capabilities •Low V CEsat .APPLICATIONS•Heavy duty battery powered equipment (Automotive,Telecom and Audio/Video) such as motor and lamp drivers•V CEsat critical applications such as the latest low supply voltage IC applications•All battery driven equipment to save battery power.DESCRIPTIONNPN low V CEsat transistor in a SC-74 plastic package.PNP complement: PBSS5350D.MARKING CODE PINNINGTYPE NUMBER MARKING CODEPBSS4350D43PIN DESCRIPTION1collector 2collector 3base 4emitter 5collector 6collectorhandbook, halfpageMAM436Top view1, 2, 5, 643132456Fig.1Simplified outline (SOT457) and symbol.LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).Notes1.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1cm2.2.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6cm 2.SYMBOL PARAMETERCONDITIONSMIN.MAX.UNIT V CBO collector-base voltage open emitter −60V V CEO collector-emitter voltage open base −50V V EBO emitter-base voltage open collector−6V I C collector current (DC)−3A I CM peak collector current −5A I BM peak base current −1AP tottotal power dissipationT amb =≤25°C note 1−600mW note 2−750mW T stg storage temperature −65+150°C T j junction temperature −150°C T amb ambient temperature−65+150°CNPN transistorPBSS4350DTHERMAL CHARACTERISTICSNotes1.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1cm2.2.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6cm 2.CHARACTERISTICST amb =25°C unless otherwise specified.Note1.Pulse test t p ≤300µs,δ≤0.02.SYMBOL PARAMETERCONDITIONS VALUE UNIT R th j-athermal resistance from junction to ambient in free air;note 1208K/W note 2160K/WSYMBOL PARAMETERCONDITIONSMIN.MAX.UNIT I CBO collector cut-off current I E =0; V CB =50V−100nA I E =0; V CB =50V; T j =150°C −50µA I EBO emitter cut-off current I C =0; V EB =5V −100nAh FEDC current gainV CE =2V;I C =500mA 200−I C =1A; note 1200−I C =2A; note 1100−V CEsatcollector-emitter saturation voltageI C =500mA; I B =50mA −90mV I C =1A; I B =50mA −170mV I C =2A; I B =200mA; note 1−290mV V BEsat base-emitter saturation voltage I C =2A; I B =200mA; note 1− 1.2V V BEon base-emitter turn-on voltage I C =1A; V CE =2V; note 1− 1.1V C c collector capacitance I E =I e =0; V CB =10V; f =1MHz −30pF f T transition frequencyI C =100mA; V CE =5V;f =100MHz100−MHzNPN transistor PBSS4350Dhandbook, halfpage0600200400MCD91510−1110I C (mA)h FE102103104(1)(2)(3)Fig.2DC current gain as a function of collector current.V CE =2V.(1)T amb =150°C.(2)T amb =25°C.(3)T amb =−55°C.handbook, halfpage01.20.40.8MCD91610−1110I C (mA)V BE (V)102103104(1)(2)(3)Fig.3Base-emitter voltage as a function of collector current.V CE =2V.(1)T amb =−55°C.(2)T amb =25°C.(3)T amb =150°C.handbook, halfpage10−1110−210−11(3)10I C (mA)V CEsat (V)10210310410−3MCD917(1)(2)Fig.4Collector-emitter saturation voltage as a function of collector current.I C /I B =20.(1)T amb =150°C.(2)T amb =25°C.(3)T amb =−55°C.handbook, halfpage01.50.51MCD91810−11I C (mA)V BEsat (V)10102103104(1)(3)(2)Fig.5Base-emitter saturation voltage as a function of collector current.I C /I B =20.(1)T amb =−55°C.(2)T amb =25°C.(3)T amb =150°C.NPN transistor PBSS4350Dhandbook, halfpage1.20.80.400.5V CE (V)I C (A)121.5MCD919(1)(4)(3)(5)(6)(8)(10)(11)(12)(2)(7)(9)Fig.6Collector current as a function of base current and collector-emitter voltage.(1)I B =3.96mA.(2)I B =3.63mA.(3)I B =3.3mA.(4)I B =2.97mA.(5)I B =2.64mA.(6)I B =2.31mA.(7)I B =1.98mA.(8)I B =1.65mA.(9)I B =1.32mA.(10)I B =990µA.(11)I B =660µA.(12)I B =330µA.T amb =25°C.handbook, halfpage00.51V CE (V)I C(A)2541.5321MCD920(1)(8)(10)(9)(2)(3)(4)(7)(5)(6)Fig.7Collector current as a function of base current and collector-emitter voltage.(1)I B =150mA.(2)I B =135mA.(3)I B =120mA.(4)I B =105mA.(5)I B =90mA.(6)I B =75mA.(7)I B =60mA.(8)I B =45mA.(9)I B =30mA.(10)I B =15mA.T amb =25°C.NPN transistorPBSS4350DPACKAGE OUTLINEREFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IECJEDECEIAJ SOT457SC-74w BM b pD epin 1indexAA 1L pQdetail XH EE v M AA B y01 2 mmscalecX132456Plastic surface mounted package; 6 leadsSOT457UNIT A 1b p c D E H E L p Q y w v mm0.10.0130.400.253.12.70.260.101.71.3e 0.953.02.50.20.10.2DIMENSIONS (mm are the original dimensions)0.60.20.330.23A 1.10.997-02-28NPN transistor PBSS4350DDEFINITIONSData sheet statusObjective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.Limiting valuesLimiting values given are in accordance with the Absolute Maximum Rating System(IEC60134).Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.Application informationWhere application information is given, it is advisory and does not form part of the specification.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.© Philips Electronics N.V.SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract,is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Internet: 200069Philips Semiconductors – a worldwide companyFor all other countries apply to: Philips Semiconductors,International Marketing &Sales Communications, Building BE-p, P.O.Box 218,5600MD EINDHOVEN, The Netherlands,Fax.+31402724825Argentina: see South AmericaAustralia: 3 Figtree Drive, HOMEBUSH, NSW 2140,Tel.+61297048141,Fax.+61297048139Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213,Tel.+431601011248, Fax.+431601011210Belarus: Hotel Minsk Business Center, Bld.3, r.1211, Volodarski Str.6,220050MINSK, Tel.+375172200733,Fax.+375172200773Belgium: see The Netherlands Brazil:see South AmericaBulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor,51James Bourchier Blvd., 1407SOFIA,Tel.+3592689211,Fax.+3592689102Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,Tel.+18002347381, Fax.+18009430087China/Hong Kong: 501Hong Kong Industrial Technology Centre,72Tat Chee Avenue, Kowloon Tong, HONG KONG,Tel.+852********,Fax.+852********Colombia: see South America Czech Republic: see AustriaDenmark: Sydhavnsgade 23, 1780COPENHAGEN V,Tel.+4533293333,Fax.+4533293905Finland: Sinikalliontie 3, FIN-02630ESPOO,Tel.+3589615800,Fax.+358961580920France: 51Rue Carnot, BP317, 92156SURESNES Cedex,Tel.+33140996161,Fax.+33140996427Germany: Hammerbrookstraße 69, D-20097HAMBURG,Tel.+4940235360,Fax.+494023536300Hungary:see AustriaIndia: Philips INDIA Ltd, Band Box Building, 2nd floor,254-D,Dr.Annie Besant Road, Worli, MUMBAI 400025,Tel.+91224938541,Fax.+91224930966Indonesia:PT Philips Development Corporation,Semiconductors Division,Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,Tel.+62217940040ext.2501, Fax.+62217940080Ireland: Newstead, Clonskeagh, DUBLIN 14,Tel.+35317640000,Fax.+35317640200Israel: RAPAC Electronics, 7Kehilat Saloniki St, PO Box 18053,TEL AVIV 61180, Tel.+97236450444,Fax.+97236491007Italy:PHILIPS SEMICONDUCTORS,Via Casati,23-20052MONZA (MI),Tel. +390392036838,Fax +390392036800Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,TOKYO 108-8507, Tel.+81337405130,Fax.+81337405057Korea: Philips House, 260-199Itaewon-dong, Yongsan-ku, SEOUL,Tel.+8227091412,Fax.+8227091415Malaysia: No.76Jalan Universiti, 46200PETALING JAYA, SELANGOR,Tel.+60 37505214,Fax.+6037574880Mexico: 5900Gateway East, Suite 200, EL PASO, TEXAS 79905,Tel.+9-58002347381, Fax +9-58009430087Middle East: see ItalyNetherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg.VB,Tel.+31402782785,Fax.+31402788399New Zealand: 2Wagener Place, C.P.O.Box 1041, AUCKLAND,Tel.+6498494160,Fax.+6498497811Norway: Box 1, Manglerud 0612, OSLO,Tel.+4722748000,Fax.+4722748341Pakistan: see SingaporePhilippines: Philips Semiconductors Philippines Inc.,106Valero St.Salcedo Village, P.O.Box 2108MCC,MAKATI,Metro MANILA, Tel.+6328166380,Fax.+6328173474Poland : Al.Jerozolimskie 195B,02-222WARSAW,Tel.+48225710000,Fax.+48225710001Portugal: see Spain Romania: see ItalyRussia: Philips Russia, atcheva 35A, 119048MOSCOW,Tel.+70957556918,Fax.+70957556919Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,Tel.+653502538,Fax.+652516500Slovakia: see Austria Slovenia: see ItalySouth Africa: S.A. PHILIPS Pty Ltd., 195-215Main Road Martindale,2092JOHANNESBURG, P.O.Box 58088 Newville 2114,Tel.+27114715401,Fax.+27114715398South America: Al.Vicente Pinzon,173, 6th floor,04547-130SÃO PAULO,SP, Brazil,Tel.+55118212333,Fax.+55118212382Spain: Balmes 22, 08007BARCELONA,Tel.+34933016312,Fax.+34933014107Sweden: Kottbygatan 7, Akalla, S-16485STOCKHOLM,Tel.+46859852000,Fax.+46859852745Switzerland: Allmendstrasse 140, CH-8027ZÜRICH,Tel.+4114882741Fax.+4114883263Taiwan: Philips Semiconductors, 6F, No.96, Chien Kuo N.Rd.,Sec.1,TAIPEI, Taiwan Tel.+886221342886,Fax.+886221342874Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,209/2Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,Tel.+6627454090,Fax.+6623980793Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260Umraniye,ISTANBUL, Tel.+902165221500,Fax.+902165221813Ukraine : PHILIPS UKRAINE, 4Patrice Lumumba str., Building B, Floor 7,252042KIEV, Tel.+380442642776, Fax. +380442680461United Kingdom: Philips Semiconductors Ltd., 276Bath Road, Hayes,MIDDLESEX UB35BX, Tel.+442087305000,Fax.+442087548421United States: 811East Arques Avenue, SUNNYVALE, CA 94088-3409,Tel.+18002347381, Fax.+18009430087Uruguay: see South AmericaVietnam: see SingaporeYugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000BEOGRAD,Tel.+381113341299,Fax.+381113342553Printed in The Netherlands603506/01/pp 8 Date of release:2000Mar 08Document order number: 939775006734。
学校电子白板系统标书详细参数报告
15
10
150
地产其他配件
批
260
10
2600
景文001无线电子笔
加印LOGO, 材质:ABS, 类型:无线射频, 演示文稿上下翻页、激光教鞭激光笔融为一体, 简单实用(简报小精灵激光教鞭), 迷你型设计, 外观精美, 携带方便, RF射频遥控设计, 遥控距离可达十米, 无须对准接收器, 真正体现无自由, 可在7-10米范围内随意演示文稿, 不用配备专人操作PC或笔记本, 简报演示, 适用于WINDOW98/2000/ME/XP各种系统, 支持各种文件的演示, 网页, 电子书的浏览, USB接口、即插即用,无需安装驱动程序, 干电池设计, 更方便携带、更换
视频输出: RCA 1组
麦克风输入: 6.3mm插座
HDMI输入: 1路
HDMI输出: 1路
侧灯: 1W LED 2个
背灯: 支持
红、蓝增益: 支持
亮度调节: 支持
投影机控制: RS232控制
展开体积(mm): 510x530x570
收拢体积(mm): 510x410x120
安全锁: 支持
净重: 约5.5Kg
展台图像插入及展台控制功能:可将展台动态图像插入到白板软件中, 可对展台图像拍照、设置分辨率, 并在白板软件中对展台通过USB进行控制, 包括:焦距调整、灯光控制、自动对焦。
二、基于云技术的教学云平台
提供云平台的全文检索与智能推荐功能
提供资源的全文检索功能。教师可通过关键字的方式来搜索教学资源及其它教学内容。搜索的内容可以根据资源的类型进行分类。云平台可根据教师信息自动推荐与所备课程相关的各类资源, 包括其他教师的共享课件内容。
6.★面板快捷键:白板两侧各具备不少于15个快捷键,通过快捷键,可直接操作白板软件;在Windows界面下仅通过操作快捷键,即可实现PPT翻页功能,具备自定义快捷键,可以定义软件功能,方便使用
KROY K4350 K4350C 热转印刷机用户手册说明书
CONTENTS1. PRODUCT INTRODUCTION (1)1.1 Compliances (1)1.2 Warranty Information (1)1.2.1 Thermal Print Head (2)1.2.2 Warranty Service Procedures (2)1.2.3 General Warranty Provisions (2)1.2.4 Limitation of Liability (3)2. GETTING STARTED (4)2.1 Unpacking and Inspection (4)2.2 Equipment Checklist (4)2.3 Printer Parts (5)2.4 External Label Roll Mount (8)2.5 Buttons and Indicators (9)3. SET UP (10)3.1 Setting Up the Printer (10)3.2 Loading Label and Tag Stock (10)3.3 Self-Peeling Function (13)3.4 Ribbon Loading Instructions (15)3.5 Install External Label Roll Mount (18)3.6 Install Memory Module (19)3.7 Self Test (20)3.8 Dump Mode (21)4. USING K4350/4350C (22)4.1 Power-on Utilities (22)4.1.1 Self Test Utility (22)4.1.2 Gap Sensor Calibration Utility (22)4.1.3 Printer Initialization (23)4.2 Error Messages (24)4.3 Troubleshooting Guide (25)5. SPECIFICATIONS, OPTIONS, & SUPPLIES (26)5.1 Specifications (26)5.1.1 Printer (26)5.1.2 Indicators and Buttons (26)5.1.3 Communication Interface (26)5.1.4 Power Requirements (26)5.1.5 Environment (27)5.1.6 Printer Body (27)5.2 Options (27)5.3 Supplies (28)5.3.1 Label Stock (28)5.3.2 Ribbon (28)1.PRODUCT INTRODUCTIONThank you very much for purchasing Kroy K4350/4350C printer. The attractive desktop printer delivers superior performance at an economical price. Both powerful and easy-to-use, K4350/4350C printer is your best choice among desktop direct thermal and thermal transfer label printers.K4350/4350C printer offers both thermal transfer and direct thermal printing at selectable speeds of 1.5 and 2.0 inches per second. It can accept a wide range of media, including roll feed, die-cut, and fan-fold labels or tags for both thermal transfer and direct thermal printing. All of the most frequently used bar code formats are available. Fonts and bar codes can be printed in any one of four directions. K4350/4350C printer provides a choice of five different sizes of alphanumeric fonts. By using font multiplication, an even greater range of sizes is possible. Smooth fonts can be downloaded from provided user friendly label design software. In addition, K4350/4350C is capable of independently executing BASIC programming functions, including arithmetic, logical operation, loop, flow-control and file management, among others. This programming capability provides the greatest efficiency in label printing. The status of printer and error messages may either be printed out or viewed on a monitor by means of the RS-232 connection.1.1 CompliancesCE, FCC, UL, CUL, TÜV-GS, CNS1.2Warranty InformationKroy warrants to the customer that under normal use and service the printer (with the exception of the print head) purchased hereunder shall be free from defects in material and workmanship for a period of one year, from the date of shipment by Kroy.Expendable items or parts such as labels, ribbons are not covered by this warranty. This warranty does not cover equipment or parts which has been misused, altered, neglected, carelessly handled, or used for purposes other than those for which the printer was manufactured. This warranty also does not cover loss, damages resulting from accident, or damages resulting from unauthorized service.1.2.1Thermal Print HeadThe warranty of the thermal print head is limited to ninety days (90) from the date of shipment to buyer. The warranty does not cover thermal print head which have been misused, altered, neglected, handled carelessly, or damaged due to improper cleaning or unauthorized repairs.1.2.2Warranty Service ProceduresIf defect should occur during the warranty period, the defective unit shall be returned, freight and insurance prepaid, in the original shipping container to your purchased reseller or distributor. Include a contact name, action desired, and a detailed description of the problem and examples when possible. We shall not be responsible for any loss or damages incurred during shipping. Any warranty repairs to be performed by your purchased reseller or distributor shall be subject to said company’s confirmation that such product meets warranty guidelines. In the event of a defect covered by its warranty.1.2.3General Warranty ProvisionsKroy makes no warranty as to the design, capability, capacity, or suitability of any of its hardware, supplies or software. Software is licensed on an “as is”basis without warranty.Except and to the extent expressly provided in this warranty and in lieu of all other warranties, expressed or implied, including, but not limited to any warranties of merchantability or fitness for a particular product.Purchaser shall be solely responsible for the selection, use, efficiency and suitability of Kroy products.1.2.4Limitation of LiabilityIn no event shall Kroy be liable to purchaser for any indirect, special, or consequential damages or lost profits arising out of or relating to Kroy products, or if the performance or a breach thereof, even if Kroy has been advised of the possibility thereof. Kroy liability, if any, to the purchaser or to the customers of purchaser hereunder shall in no event exceed the total amounts paid to Kroy hereunder by the purchaser for a defective product.In no event shall Kroy be liable to purchaser for any damages resulting from or related to any failure or delay of Kroy in the delivery or installation of the computer hardware, supplies, or software in the performance of any services.The remedies set forth here are the sole and exclusive remedies available to any person for any damages of any kind and nature including incidental, consequential, or special, whether arising from warranty (including implied warranties), contract, negligence, tort or otherwise. In the event that any implied warranties (including but not limited to the implied warranties of merchantability and fitness for a particular purpose) are found to exist, such warranties are limited in duration to the period of the warranties.2.GETTING STARTED2.1Unpacking and InspectionThe printer has been specially packaged to withstand damage in the shipping process. However, for fear that unexpected damage might occur, upon receiving the printer, carefully inspect the package and the device. In case of evident damage, contact the carrier directly to specify the nature and extent of the damage. Please retain the packaging materials in case you need to reship the printer.2.2Equipment Checklistl K4350/4350C printer unitl Ribbon paper corel Ribbon supply/rewind spindle (2 pcs.)l Label supply roll spindlel External label roll mountl Power supplyl Power cordl Centronics interface cablel Compact disk with label design software and driverSeparately purchased items may also be included. These additional items may include:l Additional labelsl Additional ribbonsl Memory modulel Cutter (available as standard with the K4350C)l Portable LCD keyboardIf any parts are missing, please contact the Customer Service Department of your purchased reseller or distributor.2.3Printer PartsFigure 1. Top front view1.Cover Release Button2.PWR., ON-LINE and ERR. Indicators3.PAUSE Button4.FEED Buttonbel Dispense Opening6.Backing Paper Opening (for use with self-peeling function)Figure 2. Interior view1. Printer Cover (in open position)2. Label Supply Roll Spindle3. Fixing Tabs4. Ribbon Mechanism5. Ribbon Supply Spindle6. Ribbon Rewind Spindle7. Printer Carriage Release Lever8. Backing Paper Opening9. Detachable Front Panel10. PAUSE Button11. PWR., ON-LINE, ERR. Indicators12. FEED Button13. Peel-Off Sensor14. Memory Module Slot (with cover on)Figure 3. Rear view1.Power On/Off Switch2.Power Supply Connector3.RS-232 DB-9 Interface Connector4.Centronics Interface Connectorbel Insert Opening (for use with external labels)2.4External Label Roll MountFigure 4. External label roll mount2.5Buttons and IndicatorsPWR. (POWER) IndicatorThe green PWR. indicator illuminates when the POWER switch is turned on.ON-LINE IndicatorThe green ON-LINE indicator illuminates when the printer is ready to print.When PAUSE button is pressed, the ON-LINE indicator flashes.ERR. Indicator (Error/Paper Empty)The red ERR. indicator illuminates in the event of a printer error, such as memory error, syntax error, and so forth. For a full list of error messages, please refer to section 4.2, Error Messages.PAUSE ButtonThe PAUSE button allows the user to stop a print job and then continue the printing with a second depression of the button. By pressing the PAUSE button:(1) the printer stops printing after the printing label, (2) the PAUSE LED flashes,and (3) the printer will hold all data in memory. This allows for trouble-free replacement of label stock and thermal transfer ribbon. A second depression of the PAUSE button will restart the printer.Note: If the PAUSE button is held down for more than 3 seconds, theprinter will be reset and all data of the previous printing job will be lost.FEED ButtonPress the FEED button to feed the label to the beginning of the next label.3.SET UP3.1Setting Up the Printer1.Place the printer on a flat, secure surface.2. Make sure the POWER switch is off.3.Connect the printer to the computer mainframe with the provided RS-232C orCentronics cable.4.Plug the power cord into the power supply connector at the rear of the printer,and then plug the power cord into a properly grounded receptable.3.2Loading Label and Tag Stock1.Open the printer cover2.Disengage the printer carriage by pulling the printer carriage release lever onthe left side of the platen.3.Slide the label supply roll spindle through the core of a label roll and attachthe fixing tabs onto the spindle.4.Place the label roll into the label roll mount. Feed the label under the carriageand over the platen.5.Adjust the label guide to fit the width of the media.6.Engage the printer carriage.7.Wind the label roll until it becomes adequately taut.8.Close the printer cover and press the FEED button three or four times until thegreen ON-LINE indicator illuminates.9.When the printer is out of ribbon or media, the ON-LINE LED will notilluminate and the ERR. LED will flash. Reload the ribbon or media withoutturning off the printer power. Press the FEED button three or four times untilthe ON-LINE LED illuminates. The printing job will be resumed without dataloss.Figure 5.Inserting label supply roll into label roll mountbel Supply Roll Spindlebel Roll Mountbel Roll4.Fixing TabsFigure 6. Feed labels through adjustable label guide1.Printer Carriage Release Lever2.Platenbel Media4.Adjustable Label Guide3.3 Self-Peeling FunctionTo employ the self-peeling function, load the label stock according to the following steps.1. Remove the front panel.2. Tear off the foremost one or two labels of the label stock, as befits the case.Feed the backing paper between the platen and the white “self-peeling” roller, as shown in Figure 7.3. Feed the backing paper through the backing paper opening in the front panel,as shown in Figure 8.4Put back the front panel.Figure 7. Setting up printer for self-peeling function1. Printer Carriage Release Lever2. Platen3. Self-Peeling Roller4. Backing PaperNote: It is recommended that the print speed be set at 2 inches (1.5 inches for K4350/4350C) per second when using the self peeling function of the printer.Figure 8. Printer ready for self-peeling function1.Printer Carriage Release Lever2.Printer Front Panel3.Backing Paper Opening4.Backing Paperbel3.4Ribbon Loading Instructions1.Place an empty paper core on the ribbon rewind spindle.2.Install the ribbon on the ribbon supply spindle.3.Disengage the printer carriage.4.Pull the ribbon leader to the front from beneath the printer carriage. Attach theribbon leader to the ribbon rewind paper core.5.Rotate the ribbon rewind roller until the ribbon leader is thoroughly, firmlyencompassed by the black section of the ribbon.6.Engage the printer carriage.7.Close the printer cover and press the FEED button until the green ON-LINELED illuminates.Figure 9. Placement of ribbon supply roll1.Printer Carriage Release Lever2.Ribbon Supply Spindle3.Ribbon Rewind Spindle4.Thermal Transfer RibbonFigure 10.Installation of label stock and thermal transfer ribbon3.5Install External Label Roll MountFigure 11. Installation of external label roll mount1.External Label Roll Mountbel Supply Roll Spindle3.External Label Feed Opening4.Fixing Tabs3.6Install Memory Module1.Power off the printer.2.Remove the cover.3.Insert the memory module.4.Put the cover back.5.Turn on the powerFigure 12.Installation of memory module (Option)1.Memory Module.2.Cover.3.7Self TestTo initiate the self test mode, depress the FEED button while turning on the printer power. The printer will calibrate the label length. If the label gap is not detected within 7", the printer stops feeding labels and the media is treated as continuous paper. In self test, a check pattern is used to check the performance of the thermal print head. Following the check pattern, the printer prints internal settings as listed below:1. Printer model and firmware version2. Mileage3. Flash times4. Check sum5. Serial port setting6. Code page setting7. Country code setting8. Print speed setting9. Print density setting10. Label size setting11. Gap (Bline) width and offset setting12. Backing paper transparence13. File list14. Memory information (Total, Available)When the self test is completed, the printer enters the dump mode. Please turn the printer's power off and then on to resume normal printing.3.8Dump ModeAfter the self test, the printer enters the dump mode. In this mode, any characters sent from the host computer will be printed in two columns, as shown.The characters received will be shown in the first column, and their corresponding hexadecimal values, in the second. This is often helpful to users for the verification of programming commands or debugging of printer programs.Reset the printer by turning the POWER switch off and on.ING K4350/4350C4.1Power-on UtilitiesThere are three power-on utilities to set up and test K4350/4350C hardware.These utilities are activated by pressing the FEED or PAUSE button and turning on the printer power simultaneously. The utilities are listed as below:1.Self-test2.Gap sensor calibration3.Printer initialization4.1.1Self Test UtilityInstall the label first. Press the FEED button and then turn on the printer power.Do not release the FEED button until the printer feeds labels. The printer performs the following items:1.Calibrate label pitch2.Print out thermal print head check pattern3.Print the internal settings4. Enter dump modeRegarding the self-test and dump mode, please refer to section 3.7 "Self Test"and section 3.8 "Dump Mode" for more information.4.1.2Gap Sensor Calibration UtilityThis utility is used to calibrate the sensitivity of gap sensor. Users may have to calibrate the gap sensor for two reasons:1.The media is being changed to a new type.2.Initialize the printer.Note: The ERR. LED may flash if gap sensor is not calibrated properly.Please follow the steps below to calibrate gap sensor:1.Turn off the printer power and install blank labels (without any logo orcharacter) on printer.2.Hold down the PAUSE button then turn on printer power.3.Release PAUSE button when the printer feeds labels. Do not turn offprinter power until the printer stops and two green LEDs light on.4.1.3Printer InitializationPrinter initialization clears all downloaded files resident in flash memory, and sets printer parameters to default values.Parameter Default Value Cleared by Initialization MILEAGE N/A NoFLASH TIMES N/A NoCHECK SUM N/A NoSERIAL PORT96,N,8,1YesCODE PAGE437 (8 bit), USA (7 bit)YesCOUNTRY CODE001YesSPEED 2.0”/sec YesDENSITY09YesSIZE N/A YesGAP(BLINE)N/A Yes TRANSPARANCY05,05,05YesPlease follow the steps below to initialize the printer:1. Turn off the printer power.2. Hold down the PAUSE and FEED buttons and turn on the printer power.3. Do not release the buttons until the three LEDs flash in turn.Note: Printing method (thermal transfer or thermal direct printing ) will be set automatically at the activation of printer power.4.2Error MessagesSyntax ErrorThe command format is incorrect.The serial port setting is incorrect.Out of RangeNumeric input is too large to be processed.The input string is too long to be stored.The size of the text or bar code exceeds that of the label.Download ErrorThe download file format is incorrect.There is not enough memory to store the file.Stack OverflowA mathematical expression is too complicated. Divide it into several expressions.The nested routine is too deep.Memory ErrorToo many variables defined.RS-232 ErrorThe serial port setting is incorrect.File not FoundCannot open the file specified. Download the file again.Type MismatchVariable type mismatch.Gap not FoundCannot detect label gap. Calibrate the label again.Clock Access ErrorCan not read from / write to the real time clock.4.3Troubleshooting GuideThe following guide lists some of the most common problems that may be encountered when operating the K4350/4350C printer. If the printer still does not function after all suggested solutions have been invoked, please contact the Customer Service Department of your purchased reseller or distributor for assistanceProblem Solution Ribbon does not advance or rewind Check the setting of print method.(SET RIBBON ON)Poor print quality Clean the thermal print head.Adjust the print density setting.Ribbon and media are not compatible.Power indicator does not illuminate Check the power cord, see whether itis properly connected.ON-LINE indicator is off Out of paper or out of ribbonCalibrate the sensitivity of gap sensor.ERR. indicator is on Command syntax is not correct.Rewind ribbon paper core is notinstalled.Serial port baud rate setting is notcorrect.Continuous feeding when printingCalibrate the gap sensor.labels5.SPECIFICATIONS, OPTIONS, & SUPPLIES5.1Specifications5.1.1Printerl Type: Direct thermal or thermal transferl Print speed:Selectable speeds of 1.5 or 2.0 inches per secondl Resolution: 300 DPI, or 12 dots per mml Font styles: Five alphanumeric fonts from 0.059"H (1.5 mm) to 0.23" (6.0mm), expandable vertically and horizontally up to 8x.l Bar codes: Code 39, Code 93, Code 128 UCC, Code 128 (Subsets A, B andC), Codabar, Interleaved 2 of 5, EAN-8, EAN-13, UPC-A, UPC-E,EAN and UPC with 2 or 5 digit add-on, Postnetl 2D bar codes: Maxicode, PDF-417, DataMatrixl Graphics: Mono PCX format5.1.2Indicators and Buttonsl Indicators: PWR., ON-LINE, ERR.l Buttons: POWER, PAUSE, FEED,Note:The functions of buttons and LEDs can be redefined by commands.5.1.3Communication Interfacel Communications: RS-232C(DB-9) at 2400, 4800, 9600 or 19200 baud andstandard Centronics interface.l Character set: ANSI ASCII character setl Word length: 7 or 8 data bits, 1 or 2 stop bits, even, odd or none parity.l Handshaking: Xon/Xoff (on receive mode only) and DSR/DTRl Input buffer: 60KB5.1.4Power Requirementsl Input voltage: Switching power, 110-240 VAC, 50-60 Hzl Output voltage: 24 VDCl Circuit protection: 2A maximum5.1.5Environmentl Operating temperature: 40o F to 104o F (5o C to 40o C)l Storage temperature: 40o F to 140 o F(5o C to 60o C)l Humidity: 10% to 95% non-condensingl Ventilation: Free air movement5.1.6Printer Bodyl Dimensions:6.14"H x 9.13"W x 11.34"D (15.6 cm H x 23.2 cm W x 28.8 cm D); withexternal roll mount 17.95" D (45.6 cm D)l Weight:K4350/4350C: 6.0 lbs. (2.7 kg), or 6.5 lbs. (2.9 kg) with external roll mountK4350/4350C: 5.2 lbs. (2.4 kg), or 5.8 lbs. (2.6 kg) with external roll mount5.2OptionsA number of different options may be added to the K4350/4350C printer for evengreater convenience and versatility. The available options include:l Foreign character fonts, including Chinese, Japanese and othersl Expandable FLASH memory modulel Cutterl Portable LCD keyboard5.3Supplies5.3.1Label StockK4350/4350C is capable of both direct thermal and thermal transfer printing.Many different direct thermal or thermal transfer stocks can be used. Refer to the following list for specifications of compatible label media.5.3.2RibbonStandard 300m by 60 or 110mm thermal transfer ribbons with wax, wax-resin, or resin coating (wound outside) are available from Kroy. Of ribbon selection, it is recommended that the ribbon be at least as wide as the print media. Also, the ribbon end should be transparent.28。
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2003 May 13
5
元器件交易网
Philips Semiconductors
Product specification
Product specification
50 V low VCEsat NPN transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; notes 1 and 3 Tamb ≤ 25 °C; notes 2 and 3 CONDITIONS open emitter open base open collector − − − − − − − − −65 − −65 MIN.
PBSS4350Z
TYP. − − − − − − − − − 110 − − − −
MAX. 100 50 100 − − − 90 170 290 <145 1.2 1.1 − 30
UNIT nA µA nA
mV mV mV mΩ V V MHz pF
2003 May 13
4
元器件交易网
PBSS4350Z
MAX. 60 50 6 3 5 1 1.35 2 +150 150 +150 V V V A A A W W
UNIT
°C °C °C
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 3. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated Handbook”. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS in free air; notes 2 and 3 Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 3. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated Handbook”. VALUE 92 62.5 UNIT K/W K/W
Philips Semiconductors
Product specification
50 V low VCEsat NPN transistor
PBSS4350Z
handbook, halfpage
600
MGW175
handbook, halfpage
hFE 500
(1)
1.2 VBE (V) 1.0
MGW176
(1)
400
(2)
0.8
(2)
300
0.6
(3)
200
(3)
0.4
100
0.2
0 10 −1
1
10
102
103 104 I C (mA)
0 10 −1
1
10
102
103 104 I C (mA)
VCE = 2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
元器件交易网
Philips Semiconductors
Product specification
50 V low VCEsat NPN transistor
FEATURES • Low collector-emitter saturation voltage • High collector current capability: IC and ICM • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat generation • Reduced PCB area requirements compared to DPAK. PINNING APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – Linear voltage regulation (LDO). • Peripheral drivers – Driver in low supply voltage applications, e.g. lamps, LEDs – Inductive load driver, e.g. relays, buzzers, motors. DESCRIPTION NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5350Z. MARKING TYPE NUMBER PBSS4350Z MARKING CODE PB4350
CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = 50 V; IE = 0 VCB = 50 V; IE = 0; Tj = 150 °C VEB = 5 V; IC = 0 VCE = 2 V; IC = 500 mA VCE = 2 V; IC = 1 A; note 1 VCE = 2 V; IC = 2 A; note 1 VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA IC = 1 A; IB = 50 mA IC = 2 A; IB = 200 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = 2 A; IB = 200 mA; note 1 IC = 2 A; IB = 200 mA; note 1 VCE = 2 V; IC = 1 A; note 1 IC = 100 mA; VCE = 5 V; f = 100 MHz VCB = 10 V; IE = Ie = 0; f = 1 MHz MIN. − − − 200 200 100 − − − − − − 100 −
元器件交易网
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D087
PBSS4350Z 50 V low VCEsat NPN transistor
Product specification Supersedes data of 2003 Jan 20 2003 May 13
thermal resistance from junction to ambient in free air; notes 1 and 3
2003 May 13
3
元器件交易网
Philips Semiconductors
Product specification
50 V low VCEsat NPN transistor
Fig.4
Collector-emitter saturation as a function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a function of collector current; typical values.