半导体器件物理(刘洋)MOSFET-part1

isolation P+ Drain P+ Source N+ Drain
N Well
-
P Well Silicon Epi Layer P
Silicon Substrate P+
-
Schematic Diagram of n-MOSFET Device
源极(S) 栅极(G)
N沟MOS晶体管的基本结构
Onset of inversion occurs when surface electron concentration equals the hole concentration in the neutral bulk.
Metal-Isolator-Semiconductor structure
Types of FETs
Classified by channel location
Surface channel FET Buried channel FET
MOSFET: Introduction
Metal Oxide Semiconductor Field Effect Transistor. The principal device of VLSI technology. High volume production. Well suited for scaling.
-Thin film transistor (TFT)
Types of FETs
HFET --MODFET
--Heterostructure Isolated Gate Field Effect Transistor
Types of FETs
Classified by type of carrier in channel n-channel enhancement mode n-channel depletion mode p-channel enhancement mode p-channel depletion mode
Metal-Isolator-Semiconductor structure
Metal-Isolator-Semiconductor structure
Application of deep depletion
A positive BL voltage draws away the electrons, forcing the MOS capacitor into deep depletion and the surface potential to increase towards Vdd.
Consequence: •The cost per bit is decreasing rapidly and continuously. •Widespread use of information technology.
Historical Development of MOSFETs
Field effect phenomenon discovered independently by J.E. Lilienfeld (in US) and O. Heil (in UK) in the late 1920s. Commercialization did not happen until 1960 (D. Kahng and M. Atalla). –Main reason: the poor semiconductor-insulator interface – Development in MOSFET overtaken by the BJT • Since then, it has revolutionalized the electronics industry for 4 decades. • • Very scalable; 90 nm and 65 nm technologies are popular. – 45 nm technology is manufacturable -22 nm technology under development
Part 2: Metal-Isolator-Semiconductor structure
Metal-Isolator-Semiconductor structure
Metal-Isolator-Semiconductor structure
Metal-Isolator-Semiconductor structure
Part 1: Background Infomation Field Effect Transistors
Potential Effect Transistor (PET)–Bipolar transistors. Field Effect Transistor (FET)-MOSFET.
栅极(G)
源极(S)
PMOS
漏极(D
漏极(D) 漏极
n+
n+
P型硅基板
半 导 体 基 板
MOS晶体管的动作
MOS晶体管实质上是一种使 电流时而流过，时而切断的开关
Schematic Diagram of n-MOSFET Device （3D） metal connection to gate
Physics of Semiconductor Device
School of Microelectronics and Solid-State Electronics
UESTC Professor Liu Yang
Self-introduction
Professor Liu Yang Email: yliu1975@
Dynamic Power Dissipation in CMOS
Power dissipated during switching (transient currents). where nav= average number of gate switching at any instant; f = clock frequency; Cnode = average node capacitance; Vswing = voltage swing from logic ‘1’ to ‘0’
Metal-Isolator-Semiconductor structure
MOS capacitance
Metal-Isolator-Semiconductor structure
Metal-Isolator-Semiconductor structure
Historical Development of MOSFETs
Historical Development of MOSFETs
Historical Development of MOSFETs
Wanlass and Sah proposed CMOS in 1963. n-channel and pchannel devices on one chip. Negligible standby power dissipation. Enable scaling of MOS IC
Types of FETs
Junction field effect transistors (JFET)
Metal semiconductor field effect transistors (MESFET)
Types of FETs
Metal insulator semiconductor field effect transistors (MISFET or IGFET) - MOSFET is one of MISFETs.
Historical Development of MOSFETs 1960: First MOSFET by D. Kahng and M. Atalla
*D. Kahng, M.M. Atalla, ‘Silicon-Silicon dioxide field induced surface devices’, IRE-AIEE Solid State Device Res. Conf. (Carnegie Inst. of Tech. Pittsburgh, PA) 1960.
-Four-terminal device. -One plate as conducting channel. -Another plate (gate) controls the charge induced in the channel.
Types of FETs
Junction field effect transistors (JFET) Metal semiconductor field effect transistors (MESFET) Isolated Gate FET -Metal insulator semiconductor field effect transistors (MISFET) -- MOSFET is one of MISFET -- Thin Film Transistor (TFT) -HFET --MODFET --HIGFET
MOSFET
1.Background Information 2.Metal-Insulator-Semiconductor (MIS) structure 3.Long Channel MOSFET 4.Non-uniform Doping 5.Buried Channel Devices 6.Short Channel Effects 7.Other device structures (NVM , SET, etc.)
polysilicon gate doped silicon