LTC4416EMS中文资料

合集下载

LTC1606中文资料

Ext. Reference = 2.5V (Notes 12, 13) q
± 0.50
± 0.25
%
Full-Scale Error Drift
Ext. Reference = 2.5V
±2
±2
ppm/°C
Power Supply Sensitivity VANA = VDIG = VDD
VDD = 5V ±5% (Note 9)
The 90dB signal-to-noise ratio offers an improvement of 3dB over competing devices, and the RMS transition noise is reduced (0.65LSB vs 1LSB) relative to competitive parts.
CONTROL LOGIC AND
TIMING
AGND1 AGND2 DGND
2
5
14
BUSY 26 CS 25 R/C 24
BYTE 23
DIGITAL CONTROL SIGNALS
1606 TA01
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.

LTC1606中文资料

高精度AD转换器LTC1606及其应用１ＬＴＣ１６０６的主要特点ＬＴＣ１６０６是ＬＩＮＥＡＲ公司生产的具有采样保持功能的１６位高速ＡＤＣ。

该ＡＤＣ分辨率高，采样速率高、功耗小，可在高精度的数据采集系统中广泛应用。

其主要特点如下：●含有１６位采样保持功能的模数转换器；●２５０ｋＨｚ采样速率，信噪比达９０ｄＢ；●信号输入范围为±１０Ｖ；●采用单５Ｖ电源供电，典型功耗为７５ｍＷ；●片内自带基准源，也可以外接基准源；●片内自带同步时钟；●采用２８脚ＳＳＯＰ封装；●带有和ＭＣＵ兼容的１６位并行输出端口。

２ＬＴＣ１６０６的引脚介绍及使用说明２．１ＬＴＣ１６０６的引脚介绍ＬＴＣ１６０６的引脚排列图如图１所示，各引脚功能及使用说明如下：ＶＩＮ：模拟量输入端，使用时应通过２００Ω的电阻连接到需转换的模拟输入，满量程为±１０Ｖ；ＡＧＮＤ１、ＡＧＮＤ２：模拟地；ＲＥＦ：２．５Ｖ基准源输入端，通常接２．２μＦ的旁路钽电容，也可以接外部基准源；ＣＡＰ：基准缓冲输出，应接１０μＦ电容旁路到地；Ｄ１５～Ｄ８：三态数据输出端，当ＣＳ为高或Ｒ／Ｃ为低时，输出为高阻态；ＤＧＮＤ：数字地；Ｄ７～Ｄ０：三态数据输出端，当ＣＳ为高或Ｒ／Ｃ为低时，输出为高阻态；ＢＹＴＥ：字节选择端，当ＢＹＴＥ端接低电平时，Ｄ１５～Ｄ０按１６位并行输出数据；当ＢＹＴＥ端接高电平时，高８位和低８位分两次并行输出；Ｒ／Ｃ：Ｒｅａｄ／Ｃｏｎｖｅｒｔ输入端，当ＣＳ为低时，在Ｒ／Ｃ端的下降沿启动采样保持器并进行模数转换，并在Ｒ／Ｃ的上升沿将使能数据输出；ＣＳ：片选端，当Ｒ／Ｃ为低时，在ＣＳ引脚的下降沿启动模数转换，当Ｒ／Ｃ为高时，在ＣＳ引脚的下降沿使能数据输出；ＢＵＳＹ：模数转换状态输出引脚。

当进行模数转换时，该引脚输出低电平，当ＢＵＳＹ端产生一上升沿时，表示模数转换结束，数据输出端有效。

当ＢＵＳＹ产生上升沿时，ＣＳ和Ｒ／Ｃ必须为高；ＶＡＮＡ：模拟５Ｖ电源输入端，接０．１μＦ的陶瓷电容和１０μＦ的钽电容旁路到地；ＶＤＩＧ：数字５Ｖ电源输入端，使用时接到ＶＡＮＡ。

LTC4413中文资料

, LTC and LT are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners.
DESCRIPTIO
The LTC®4413 contains two monolithic ideal diodes, each capable of supplying up to 2.6A from input voltages between 2.5V and 5.5V. Each ideal diode uses a 100mΩ P-channel MOSFET that independently connects INA to OUTA and INB to OUTB. During normal forward operation the voltage drop across each of these diodes is regulated to as low as 28mV. Quiescent current is less than 40µA for diode currents up to 1A. If either of the output voltages exceeds its respective input voltages, that MOSFET is turned off and less than 1µA of reverse current will flow from OUT to IN. Maximum forward current in each MOSFET is limited to a constant 2.6A and internal thermal limiting circuits protect the part during fault conditions.

EMS

15
HFWorks–检查问题
你需要知道你的结构的输入阻抗是什么吗? 他随频率的回流损耗/电压驻波为何? 设计中的不连续性阻抗在哪里？插入损耗是可接受的吗? 你是否担心你设计中的耦合与隔离? 你想确保你的结构中没有模式转换吗? 针对高速开关的串扰现象与讯号整合性如何?
© 2010 ElectroMagneticWorks, Inc..
© 2010 ElectroMagneticWorks, Inc..

17
HFWorks–检查问题
你的设计需要仔细注意共振吗? 你设计共振器吗? 你想将渗漏减到最小吗? 你需要知道你的共振结构的质量因子吗? 你需要分开导体与非导性的损失吗? 如何针对你的滤波器设计去优化极点-零的位置? 如何改变材料/几何来影响你的共振器/滤波器设计?
© 2010 ElectroMagneticWorks, Inc..

11
EMS –检查问题
微机电
你如何保证有适当的促动力? 你是否有足够的力量驱动你的装置?
生医&健康
你使用电流来治疗疾病吗? 磁铁如何? FDA/FCC规章如何? 关心曝露在电磁辐射中吗?
© 2010 ElectroMagneticWorks, Inc..

7
EMS –检查问题
电子和电路板
你如何保护你的装置? 你需要遵守FCC规章吗? 你担心干扰吗? 你担心串扰现象与失真吗? 你如何减少静电释放? 你如何在过电压下保护你的装置? 你关心你的设计会产生热吗? 你想要使它减少到最小吗?
电磁分析EMS/高频分析HFWorks
实威国际股份有限公司 CAE产品事业部

LTC4213 1 4213f 电子电路保护器说明书

2µs/DIV4213 TA01b124213fBias Supply Voltage (V CC )...........................–0.3V to 9V Input VoltagesON, SENSEP, SENSEN.............................–0.3V to 9V I SEL ..........................................–0.3V to (V CC + 0.3V)Output VoltagesGATE .....................................................–0.3V to 15V READY.....................................................–0.3V to 9V Operating Temperature RangeLTC4213C ...............................................0°C to 70°C LTC4213I.............................................–40°C to 85°C Storage Temperature Range.................–65°C to 150°C Lead Temperature (Soldering, 10sec)...................300°CORDER PART NUMBER DDB PART*MARKING T JMAX = 125°C, θJA = 250°C/WEXPOSED PAD (PIN 9)PCB CONNECTION OPTIONALConsult LTC Marketing for parts specified with wider operating temperature ranges.*The temperature grade is identified by a label on the shipping container.LBHVLTC4213CDDB LTC4213IDDB ABSOLUTE AXI U RATI GSW W WU PACKAGE/ORDER I FOR ATIOUUW (Note 1)ELECTRICAL CHARACTERISTICSThe ● denotes the specifications which apply over the full operatingtemperature range, otherwise specifications are at T A = 25°C. V CC = 5V, I SEL = 0 unless otherwise noted. (Note 2)SYMBOL PARAMETER CONDITIONSMIN TYP MAX UNITSV CC Bias Supply Voltage ● 2.36V V SENSEP SENSEP Voltage ●06V I CC V CC Supply Current●1.63mA V CC(UVLR)V CC Undervoltage Lockout Release V CC Rising● 1.8 2.07 2.23V ∆V CC(UVHYST)V CC Undervoltage Lockout Hysteresis ●30100160mV I SENSEP SENSEP Input Current V SENSEP = V SENSEN = 5V, Normal Mode 154080µA V SENSEP = V SENSEN = 0, Normal Mode –1±15µA I SENSENSENSEN Input CurrentV SENSEP = V SENSEN = 5V, Normal Mode 154080µA V SENSEP = V SENSEN = 0, Normal Mode –1±15µA V SENSEP = V SENSEN = 5V,50280µAReset Mode or Fault ModeV CBCircuit Breaker Trip Voltage I SEL = 0, V SENSEP = V CC●22.52527.5mV V CB = V SENSEP – V SENSEN I SEL = Floated, V SENSEP = V CC ●455055mV I SEL = V CC, V SENSEP = V CC ●90100110mV V CB(FAST)Fast Circuit Breaker Trip Voltage I SEL = 0, V SENSEP = V CC●63100115mV V CB(FAST)= V SENSEP – V SENSEN I SEL = Floated, V SENSEP = V CC ●126175200mV I SEL = V CC, V SENSEP = V CC ●252325371mV I GATE(UP)GATE Pin Pull Up Current V GATE = 0V●–50–100–150µA I GATE(DN)GATE Pin Pull Down Current ∆V SENSEP – V SENSEN = 200mV, V GATE = 8V ●1040mA ∆V GSMAX External N-Channel Gate Drive V SENSEN = 0, V CC ≥ 2.97V, I GATE = –1µA ● 4.8 6.58V V SENSEN = 0, V CC = 2.3V, I GATE = –1µA ● 2.65 4.38V ∆V GSARMV GS Voltage to Arm Circuit BreakerV SENSEN = 0, V CC ≥ 2.97V ● 4.4 5.47.6V V SENSEN = 0, V CC = 2.3V●2.53.57VTOP VIEWDDB PACKAGE8-LEAD (3mm × 2mm) PLASTIC DFN567894321READY ON I SEL GND V CC SENSEP SENSEN GATE34213f∆V GSMAX – ∆V GSARM Difference Between ∆V GSMAX and V SENSEN = 0, V CC ≥ 2.97V ●0.3 1.1V ∆V GSARMV SENSEN = 0, V CC = 2.3V●0.150.8VV READY(OL)READY Pin Output Low Voltage I READY = 1.6mA, Pull Down Device On ●0.20.4V I READY(LEAK)READY Pin Leakage Current V READY = 5V, Pull Down Device Off ●0±1µA V ON(TH)ON Pin High Threshold ON Rising, GATE Pulls Up ●0.760.80.84V ∆V ON(HYST)ON Pin Hysteresis ON Falling, GATE Pulls Down104090mV V ON(RST)ON Pin Reset Threshold ON Falling, Fault Reset, GATE Pull Down ●0.360.40.44V I ON(IN)ON Pin Input Current V ON = 1.2V●0±1µA ∆V OV Overvoltage Threshold ●0.410.7 1.1V ∆V OV = V SENSEP – V CCt OVOvervoltage Protection Trip Time V SENSEP = V SENSEN = Step 5V to 6.2V 2565160µs t FAULT(SLOW)V CB Trips to GATE Discharging ∆V SENSE Step 0mV to 50mV,●71627µs V SENSEN Falling, V CC = V SENSEP = 5V t FAULT(FAST)V CB(FAST) Trips to GATE Discharging ∆V SENSE Step 0V to 0.3V, V SENSEN Falling,●12.5µs V SENSEP = 5Vt DEBOUNCE Startup De-Bounce Time V ON = 0V to 2V Step to Gate Rising,2760130µs (Exiting Reset Mode)t READY READY Delay Time V GATE = 0V to 8V Step to READY Rising,2250115µs V SENSEP = V SENSEN = 0t OFF Turn-Off Time V ON = 2V to 0.6V Step to GATE Discharging 1.5510µs t ON Turn-On Time V ON = 0.6V to 2V Step to GATE Rising,4816µs (Normal Mode)t RESETReset TimeV ON Step 2V to 0V2080150µsNote 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired.ELECTRICAL CHARACTERISTICSThe ● denotes the specifications which apply over the full operatingtemperature range, otherwise specifications are at T A = 25°C. V CC = 5V, I SEL = 0 unless otherwise noted. (Note 2)SYMBOLPARAMETERCONDITIONSMIN TYP MAX UNITSNote 2: All currents into device pins are positive; all currents out of device pins are negative. All voltages are referenced to ground unless otherwise specified.4564213ft RESET vs Temperaturet FAULT(SLOW) vs V CCt FAULT(SLOW) vs Temperaturet FAULT(FAST) vs V CCt FAULT(FAST) vs TemperatureTYPICAL PERFOR A CE CHARACTERISTICSU WSpecifications are at T A = 25°C. V CC = 5Vunless otherwise noted.t F A U L T (F A S T ) (µs )4213 G230.90.80.71.01.11.21.3TEMPERATURE (°C)–50050100125–252575BIAS SUPPLY VOLTAGE (V)2.010t F A U L T (S L O W ) (µs )14121618 3.0 4.0 5.0 6.04213 G202022 2.53.54.55.5TEMPERATURE (°C)–500501001254213 G21–25257510t F A U L T (S L O W ) (µs )141216182022TEMPERATURE (°C)–500501001254213 G19–252575t R E S E T (µs )60708090100BIAS SUPPLY VOLTAGE (V)2.0t F A U L T (F A S T ) (µs )3.04.05.06.04213 G222.53.54.55.50.90.80.71.01.11.21.374213fPI FU CTIO SU U UREADY (Pin 1): READY Status Output. Open drain output that goes high impedance when the external MOSFET is on and the circuit breaker is armed. Otherwise this pin pulls low.ON (Pin 2): ON Control Input. The LTC4213 is in reset mode when the ON pin is below 0.4V. When the ON pin increases above 0.8V, the device starts up and the GATE pulls up with a 100µA current source. When the ON pin drops below 0.76V, the GATE pulls down. To reset a circuit breaker fault, the ON pin must go below 0.4V.I SEL (Pin 3): Threshold Select Input. With the I SEL pin grounded, float or tied to V CC the V CB is set to 25mV, 50mV or 100mV, respectively. The corresponding V CB(FAST)values are 100mV, 175mV and 325mV.GND (Pin 4): Device Ground.GATE (P in 5): GATE D rive Output. An internal charge pump supplies 100µA pull-up current to the gate of the external N-channel MOSFET. Internal circuitry limits thevoltage between the GATE and SENSEN pins to a safe gate drive voltage of less than 8V. When the circuit breaker trips, the GATE pin abruptly pulls to GND.SENSEN (Pin 6): Circuit Breaker Negative Sense Input.Connect this pin to the source of the external MOSFET.During reset or fault mode, the SENSEN pin discharges the output to ground with 280µA.SENSEP (P in 7): Circuit Breaker Positive Sense Input.Connect this pin to the drain of external N-channel MOSFET.The circuit breaker trips when the voltage across SENSEP and SENSEN exceeds V CB . The input common mode range of the circuit breaker is from ground to V CC + 0.2V when V CC < 2.5V. For V CC ≥ 2.5V, the input common mode range is from ground to V CC + 0.4V.V CC (Pin 8): Bias Supply Voltage Input. Normal operation is between 2.3V and 6V. An internal under-voltage lockout circuit disables the device when V CC < 2.07V.Exposed Pad (Pin 9): Exposed pad may be left open or connected to device ground.8910114213fsupply transient dips below 1.97V of less than 80µs are ignored.ON FunctionWhen V ON is below comparator COMP1’s threshold of 0.4V for 80µs, the device resets. The system leaves reset mode if the ON pin rises above comparator COMP2’s threshold of 0.8V and the UVLO condition is met. Leaving reset mode, the GATE pin starts up after a t DEBOUNCE delay of 60µs. When ON goes below 0.76V, the GATE shuts off after a 5µs glitch filter delay. The output is discharged by the external load when V ON is in between 0.4V to 0.8V. At this state, the ON pin can re-enable the GATE if V ON exceeds 0.8V for more than 8µs. Alternatively, the device resets if the ON pin is brought below 0.4V for 80µs. Once reset, the GATE pin restarts only after the t DEBOUNCE 60µs delay at V ON rising above 0.8V. To protect the ON pin from overvoltage stress due to supply transients, a series resistor of greater than 10k is recommended when the ON pin is connected directly to the supply. An external resis-tive divider at the ON pin can be used with COMP2 to set a supply undervoltage lockout value higher than the inter-nal UVLO circuit. An RC filter can be implemented at the ON pin to increase the powerup delay time beyond the internal 60µs delay.Gate FunctionThe GATE pin is held low in reset mode. 60µs after leaving reset mode, the GATE pin is charged up by an internal 100µA current source. The circuit breaker arms when V GATE > V SENSEN + ∆V GSARM . In normal mode operation,the GATE peak voltage is internally clamped to ∆V GSMAX above the SENSEN pin. When the circuit breaker trips, an internal MOSFET shorts the GATE pin to GND, turning off the external MOSFET.READY StatusThe READY pin is held low during reset and at startup. It is pulled high by an external pullup resistor 50µs after the circuit breaker arms. The READY pin pulls low if the circuit breaker trips or the ON pin is pulled below 0.76V, or V CC drops below undervoltage lockout.∆V GSARM and V GSMAXEach MOSFET has a recommended V GS drive voltage where the channel is deemed fully enhanced and R DSON is minimized. Driving beyond this recommended V GS volt-age yields a marginal decrease in R DSON . At startup, the gate voltage starts at ground potential. The GATE ramps past the MOSFET threshold and the load current begins to flow. When V GS exceeds ∆V GSARM , the circuit breaker is armed and enabled. The chosen MOSFET should have a recommended minimum V GS drive level that is lower than ∆V GSARM . Finally, V GS reaches a maximum at ∆V GSMAX.Trip and Reset Circuit BreakerFigure 2 shows the timing diagram of V GATE and V READY after a fault condition. A tripped circuit breaker can be reset either by cycling the V CC bias supply below UVLO thresh-old or pulling ON below 0.4V for >t RESET . Figure 3 shows the timing diagram for a tripped circuit breaker being reset by the ON pin.Calculating Current LimitThe fault current limit is determined by the R DSON of the MOSFET and the circuit breaker voltage V CB .I V R LIMIT CB DSON=()2The R DSON value depends on the manufacturer’s distribu-tion, V GS and junction temperature. Short Kelvin-sense connections between the MOSFET drain and source to the LTC4213 SENSEP and SENSEN pins are strongly recommended.For a selected MOSFET, the nominal load limit current is given by:I V R LIMIT NOM CB NOM DSON NOM ()()()()=3The minimum load limit current is given by:I V R LIMIT MIN CB MIN DSON MAX ()()()()=4APPLICATIO S I FOR ATIOW UUU1213144213fOperating temperature of 0° to 70°C.R DSON @ 25°C = 100%R DSON @ 0°C = 90%R DSON @ 70°C = 120%MOSFET resistance variation:R DSON(NOM) = 15m • 0.82 = 12.3m ΩR DSON(MAX) = 15m • 1.333 • 0.93 • 1.2 = 15m • 1.488= 22.3m ΩR DSON(MIN) = 15m • 0.667 • 0.80 • 0.90 = 15m • 0.480= 7.2m ΩV CB variation:NOM V CB = 25mV = 100%MIN V CB = 22.5mV = 90%MAX V CB = 27.5mV = 110%The current limits are:I LIMIT(NOM) = 25mV/12.3m Ω = 2.03A I LIMIT(MIN) = 22.5mV/22.3m Ω = 1.01A I LIMIT(MAX) = 27.5mV/7.2m Ω = 3.82AFor proper operation, the minimum current limit must exceed the circuit maximum operating load current with margin. So this system is suitable for operating load current up to 1A. From this calculation, we can start with the general rule for MOSFET R DSON by assuming maxi-mum operating load current is roughly half of the I LIMIT(NOM). Equation 7 shows the rule of thumb.I V R OPMAX CB NOM DSON NOM =()()•()27Note that the R DSON(NOM) is at the LTC4213 nominal operating ∆V GSMAX rather than at typical vendor spec.Table 1 gives the nominal operating ∆V GSMAX at the various operating V CC . From this table users can refer to the MOSFET’s data sheet to obtain the R DSON(NOM) value.Table 1. Nominal Operating ∆V GSMAX for Typical Bias Supply VoltageV CC (V)∆V GSMAX (V)2.3 4.32.5 5.02.7 5.63.0 6.53.37.05.07.06.07.0Load Supply Power-Up after Circuit Breaker Armed Figure 4 shows a normal power-up sequence for the circuit in Figure 1 where the V IN load supply power-up after circuit breaker is armed. V CC is first powered up by an auxiliary bias supply. V CC rises above 2.07V at time point 1. V ON exceeds 0.8V at time point 2. After a 60µs debounce delay, the GATE pin starts ramping up at time point 3. The external MOSFET starts conducting at time point 4. At time point 5, V GATE exceed ∆V GSARM and the circuit breaker is armed. After 50µs (t READY delay), READY pulls high by an external resistor at time point 6. READY signals the V IN load supply module to start its ramp. The load supply begins soft-start ramp at time point 7. The load supply ramp rate must be slow to prevent circuit breaker tripping as in equation (8).∆∆V t I I C IN OPMAX LOADLOAD<−()8Where I OPMAX is the maximum operating current defined by equation 7.For illustration, V CB = 25mV and R DSON = 3.5m Ω at the nominal operating ∆V GSMAX . The maximum operating current is 3.5A (refer to equation 7). Assuming the load can draw a current of 2A at power-up, there is a margin of 1.5A available for C LOAD of 100µF and V IN ramp rate should be <15V/ms. At time point 8, the current through the MOSFET reduces after C LOAD is fully charged.APPLICATIO S I FOR ATIOW UUU1516174213fThe selected MOSFET V GS absolute maximum rating should meet the LTC4213 maximum ∆V GSMAX of 8V.Other MOSFET criteria such as V BDSS , I DMAX , and R DSON should be reviewed. Spikes and ringing above maximum operating voltage should be considered when choosing V BDSS . I DMAX should be greater than the current limit. The maximum operating load current is determined by the R DSON value. See the section on “Calculating Current Limit” for details.Supply RequirementsThe LTC4213 can be powered from a single supply or dual supply system. The load supply is connected to the SENSEP pin and the drain of the external MOSFET. In the single supply case, the V CC pin is connected to the load supply, preferably with an RC filter. With dual supplies,V CC is connected to an auxiliary bias supply V AUX where V AUX voltage should be greater or equal to the load supply voltage. The load supply voltage must be capable of sourcing more current than the circuit breaker limit. If the load supply current limit is below the circuit breaker trip current, the LTC4213 may not react when the output overloads. Furthermore, output overloads may trigger UVLO if the load supply has foldback current limit in a single supply system.V IN Transient and Overvoltage ProtectionInput transient spikes are commonly observed whenever the LTC4213 responds to overload. These spikes can be large in amplitude, especially given that large decoupling capacitors are absent in hot swap environments. These short spikes can be clipped with a transient suppressor of adequate voltage and power rating. In addition, the LTC4213can detect a prolonged overvoltage condition. WhenAPPLICATIO S I FOR ATIOW UUU point 6 should be within the circuit breaker limits. Other-wise, the system fails to start and the circuit breaker trips immediately after arming. In most applications additional external gate capacitance is not required unless C LOAD is large and startup becomes problematic. If an external gate capacitor is employed, its capacitance value should not be excessive unless it is used with a series resistor. This is because a big gate capacitor without resistor slows down the GATE turn off during a fault. An alternative method would be a stepped I SEL pin to allow a higher current limit during startup.In the event of output short circuit or a severe overload, the load supply can collapse during GATE ramp up due to load supply current limit. The chosen MOSFET must withstand this possible brief short circuit condition before time point 6 where the circuit breaker is allowed to trip. Bench short circuit evaluation is a practical verification of a reliable design. To have current limit while powering a MOSFET into short circuit conditions, it is preferred that the load supply sequences to turn on after the circuit breaker is armed as described in an earlier section.Power-Off CycleThe system can be powered off by toggling the ON pin low.When ON is brought below 0.76V for 5µs, the GATE and READY pins are pulled low. The system resets when ON is brought below 0.4V for 80µs.MOSFET SelectionThe LTC4213 is designed to be used with logic (5V) and sub-logic (3V) MOSFETs for V CC potentials above 2.97V with ∆V GSMAX exceeding 4.5V. For a V CC supply range between 2.3V and 2.97V, sub-logic MOSFETs should be used as the minimum ∆V GSMAX is less than 4.5V.1819Information furnished by Linear Technology Corporation is believed to be accurate and reliable.However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.201630 McCarthy Blvd., Milpitas, CA 95035-7417(408) 432-1900 ● FAX: (408) 434-0507 ● © LINEAR TECHNOLOGY CORPORA TION 2005LT/TP 0405 500 • PRINTED IN USA。

LTC4416中文资料

221k
SUP75P03_07
187k 24.9k GND
V2 V2 = 10.8V
LTC4416
E1
V1
GND
G1
E2
VS
H2
G2
H1
V2
BACKUP SUPPLY SUP75P03_07
VS
4416 TA01
cURRENT (A)
LTC4416 vs Schottky Diode Forward Voltage Drop
ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. V1 = V2 = 12V, E1 = 2V, E2 = GND, GND = 0V. Current into a pin is positive and current out of a pin is negative. All voltages are referenced to GND, unless otherwise specified.
8.0
cONSTANT RON
3.6 LTc4416
cONSTANT VOLTAGE
ScHOTTKY DIODE
0 0.02
FORWARD VOLTAGE (V)
0.5
4416 TA01b
Under and Overvoltage Shutdown Operation
VIN
221k
75k
VTH2 WITH HYSTERESIS

Littelfuse 216系列保险丝规格书说明书

Electrical Characteristics for Series
% of Ampere Rating
Ampere Rating
50mA – 4A
Opening Time 60 minutes, Minimum
150%
5A – 6.3A
60 minutes, Minimum
8A – 16A
30 minutes, Minimum
0
Time (Seconds)
Preheat Time
Dwell Time
Cooling Time
Recommended Process Parameters:
Wave Parameter
Lead-Free Recommendation
Preheat:
%FQFOETPO'MVY"DUJWBUJPO5FNQFSBUVSF
Axial Lead & Cartridge Fuses
5×20 mm > Fast-Acting > 216 Series
216 Series, 5 x 20 mm, Fast-Acting Fuse
PS E
Agency Approvals
Agency
PS E
Agency File Number
Cartridge Certiﬁcates:
8A – 16A
0.04 sec., Min.; 20 sec. Max.
50mA – 4A .003 sec., Min.; 0.3 sec. Max.
400%
5A – 6.3A
.003 sec., Min.; 0.3 sec. Max.
8A – 16A

LTC1144资料

2
U
W
U
U
W W
W
元器件交易网
LTC1144 TYPICAL PERFORMANCE CHARACTERISTICS
Output Resistance vs Supply Voltage
元器件交易网
LTC1144 Switched-Capacitor Wide Input Range Voltage Converter with Shutdown
FEATURES
s s s s s s
DESCRIPTIO
s s
Wide Operating Supply Voltage Range: 2V to 18V Boost Pin (Pin 1) for Higher Switching Frequency Simple Conversion of 15V to –15V Supply Low Output Resistance: 120Ω Maximum Power Shutdown to 8µA with SHDN Pin Open Circuit Voltage Conversion Efficiency: 99.9% Typical Power Conversion Efficiency: 93% Typical Easy to Use
ORDER PART NUMBER LTC1144CN8 LTC1144IN8
N8 PACKAGE 8-LEAD PLASTIC DIP T JMAX = 110°C, θJA = 100°C/W
TOP VIEW BOOST 1 CAP+ 2 GND 3 CAP– 4 8 7 6 5 V+ OSC SHDN VOUT
LTC1144CS8 LTC1144IS8 S8 PART MARKING 1144 1144I

LTC4416EMS-1中文资料

4416faPowerPath Controllers forLarge PFETsThe LTC ®4416/LTC4416-1 control two sets of external P-channel MOSFETs to create two near ideal diode functions for power switchover circuits. This permits highly efficient OR’ing of multiple power sources for extended battery life and low self heating. When conducting, the voltage drop across the MOSFET is typically 25mV. For applications with a wall adapter or other auxiliary power source, the load is automatically disconnected from the battery when the aux-iliary source is connected.The LTC4416 integrates two interconnected PowerPath TM controllers with soft switchover control. The “soft-off” switchover permits the users to transfer between two dis-similar voltages without excessive voltage undershoot (or V DROOP ) in the output supply. The LTC4416/LTC4416-1 also contain a “fast-on” feature that dramatically increases gate drive current when the forward input voltage exceeds 25mV. The LTC4416 “fast off” feature is engaged when the sense voltage exceeds the input voltage by 25mV. The LTC4416-1 enables the fast off under the same conditions and when the other external P-channel device is selected using the enable pins.The w ide o perating s upply r ange s upports o peration f rom o ne to eight Li-Ion cells in series. The low quiescent current (35µA per c hannel) i s i ndependent o f t he l oad c urrent. T he g ate d river includes an internal voltage clamp for MOSFET protection.The LTC4416/LTC4416-1 are available in low profile 10-lead MSOP packages.■High Current PowerPath Switch■ Industrial and Automotive Applications ■ Uninterruptible Power Supplies ■ Logic Controlled Power Switch ■ Battery Backup System■Emergency Systems with Battery Backups■Designed Specifically to Drive Large and Small Q G PFETs■ Very Low Loss Replacement for Power Supply OR’ing Diodes■ Wide Operating Voltage Range: 3.6V to 36V ■ –40°C to 125°C Operating Temperature Range ■ Reverse Battery Protection■ Automatic Switching Between DC Sources ■ Low Quiescent Current: 35µA per Channel ■ Load Current Sharing■ MOSFET Gate Protection Clamp■ Precision Input Control Comparators for Setting Switchover Threshold Points■Open-Drain Feedback Points for Customer Specified Hysteresis Control■ Minimal External Components■ Space Saving 10-Lead MSOP PackageAutomatic PowerPath SwitchoverAPPLICATIO SUFEATURESDESCRIPTIOUTYPICAL APPLICATIOUAll other trademarks are the property of their respective owners.V1 = 12V (FAIL)SFORWARD VOLTAGE (V)c U R R E N T (A )8.03.64416 TA01b0.5LTC4416 vs Schottky Diode Forward Voltage DropGNDV INV OUT UV ENABLED AT 5V, V IN RESTORED TO LOAD WHEN V IN RISES TO 5.5V OV ENABLED AT 13.5V, V IN RESTORED TO LOAD WHEN V IN FALLS TO 12VUnder and Overvoltage Shutdown OperationLTC4416/LTC4416-14416faSupply Voltage (V1, V2) ..............................–14V to 40V Voltage from V1 or V2 to V S .......................–40V to 40V Input VoltageE1, E2 ....................................................–0.3V to 40V V S ...........................................................–14V to 40V Output VoltageG1 .......–0.3V to the Higher of V1 + 0.3V or V S + 0.3V G2 .......–0.3V to the Higher of V2 + 0.3V or V S + 0.3V H1, H2 .....................................................–0.3V to 7V Operating Ambient Temperature Range (Note 2)LTC4416E ............................................–40°C to 85°C LTC4416I ...........................................–40°C to 125°C Operating JunctionTemperature Range ................................–40°C to 125°C Storage Temperature Range ...................–65°C to 150°C Lead Temperature (Soldering, 10 sec) ..................300°C(Note 1)The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at T A = 25°C. V1 = V2 = 12V, E1 = 2V, E2 = GND, GND = 0V. Current into a pin is positive and current out of a pin is negative. All voltages are referenced to GND, unless otherwise specified.SYMBOLPARAMETERCONDITIONSMIN TYP MAX UNITSV V1, V V2, V VS Operating Supply Range V1, V2 and/or V S Must be in This Range for Proper Operation● 3.636V I QFL Quiescent Supply Current at Low SupplyWhile in Forward Regulation V V1 = 3.6V, V V2 = 3.6V. Measure Combined Current at V1, V2 and V S Pins Averaged with V VS = 3.560V and V VS = 3.6V (Note 3)●70µAI QFH Quiescent Supply Current at High Supply While in Forward RegulationV V1 = 36V, V V2 = 36V. Measure Combined Current at V1, V2 and V S Pins Averaged with V VS = 35.960V and V VS = 36V (Note 3)●130µAI QRL Quiescent Supply Current at Low Supply While in Reverse Turn-OffV V1 = 3.6V, V V2 = 3.6V. Measure Combined Current at V1, V2 and V S Pins with V VS = 3.7V●70µA I QRH Quiescent Supply Current at High Supply While in Reverse Turn-OffV V1 = 35.9V, V V2 = 35.9V. Measure Combined Current at V1, V2 and V S Pins with V VS = 36V ●130µA I QCL Quiescent Supply Current at Low Supply with E1 and E2 ActiveV V1 = 3.6V, V V2 = 3.6V, V V1 – V VS = 0.9V,V E1 = 0V, V E2 = 2V, V1 and V2 Measured Separately ●30µA I QCH Quiescent Supply Current at High Supply with E1 and E2 ActiveV V1 = 36V, V V2 = 36V, V V1 – V VS = 0.9V,V E1 = 0V, V E2 = 2V, V1 and V2 Measured Separately ●65µA I LEAKV1, V2 and V S Pin Leakage Currents When Other Pin Supplies Power (Note 4)V V1 = V V2 = 28V, V VS = 0V. Measure I VS –10–11µA V V1 = V V2 = 14V, V VS = –14V. Measure I VS –10–11µA V V1 = V V2 = 36V, V VS = 8V. Measure I VS–10–11µA V FR PowerPath Switch Forward Regulation VoltageV V1, V V2 – V VS , 3.6V ≤ V V1, V V2 ≤ 36V, C G1 = C G2 = 3nF●1040mV V RTO PowerPath Switch Reverse Turn-Off Threshold VoltageV V1, V V2 – V VS , 3.6V ≤ V V1, V V2 ≤ 36V, C G1 = C G2 = 3nF●–40–10mV V FOPowerPath Switch Forward Fast-On Voltage Comparator ThresholdV V1, V V2 – V VS , 6V ≤ V V1, V V2 ≤ 36V, C G1 = C G2 = 3nF, I G1, I G2 > 500µA●50125mVELECTRICAL CHARACTERISTICSABSOLUTE AXI U RATI GSW W WU PACKAGE/ORDER I FOR ATIOUUW12345H1E1GND E2H2109876G1V1V S V2G2TOP VIEWMS PACKAGE10-LEAD PLASTIC MSOPT JMAX = 130°C, θJA = 120°C/WORDER PART NUMBER MS PART MARKING*LTC4416EMS LTC4416IMS LTC4416EMS-1 LTC4416IMS-1LTCFC LTCFC LTCPS LTCPSOrder Options Tape and Reel: Add #TRLead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF Lead Free Part Marking: /leadfree/Consult LTC Marketing for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container.LTC4416/LTC4416-14416faNote 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime.Note 2: The LTC4416E is guaranteed to meet performance specifications from 0°C to 85°C. Specifications over the –40°C to 85°C operatingtemperature range are assured by design, characterization and correlation with statistical process controls. The LTC4416I is guaranteed and tested over the –40°C to 125°C operating temperature range.Note 3: This results in the same supply current as would be observed with an external P-channel MOSFET connected to the LTC4416 and operating in forward regulation.Note 4: Only 3 of 9 permutations illustrated. This specification is the same when power is provided through V S or V2. This specification is only valid when V1, V2 and V S are within 28V of each other.Note 5: V1 and V2 are held at 12V and G1 and G2 are forced to 9V. V S is set at 12V to measure the source current at either G1 or G2.Note 6: V1 and V2 are held at 12V and G1 and G2 are forced to 9V. V S is set at 11.96V to measure the sink current at either G1 or G2.Note 7: V1 and V2 are held at 12V and G1 and G2 are forced to 9V. V S is set at 11.875V to measure the sink current at either G1 or G2.SYMBOL PARAMETERCONDITIONSMIN TYP MAX UNITSI G(SRC) I G(SNK) I G(FO) I G(OFF)GATE Active Forward Regulation Source Current Sink CurrentSink Current During Fast-On Source Current During Fast-Off(Note 5) (Note 6) (Note 7) (Note 12)–9 15 500–2 200 –500 µA µA µA µA V G(ON)G1 and G2 Clamp Voltage Apply I G1 = I G2 = 2µA, V V1 = V V2 = 12V, V VS = 11.8V, Measure V V1 – V G1 or V V2 – V G2●7.48.259.1V V G(OFF)G1 and G2 Off Voltage Apply I G1 = I G2 = –30µA, V V1 = V V2 = 12V, V VS = 12.2V, Measure V V1 – V G1 or V V2 – V G2●0.3500.920V t G(ON)G1 and G2 Turn-On Time V GS < –6V, C G = 17nF (Note 8)●60µs t G(OFF)G1 and G2 Turn-Off Time V GS > –1.5V, C G = 17nF (Note 9)●30µs t E(OFF)Enable Comparator Turn-Off Delay (Note 14) LTC4416-1 Only ●6µs H1 and H2 Open-Drain DriversI H(OFF)H1 and H2 Off Current 3.6V ≤ V V1, V V2 ≤ 36V (Note 10)●–11µA V H(ON)H1 and H2 On Voltage 3.6V ≤ V V1, V V2 ≤ 36V (Note 10)●100mV t H(ON)H1 and H2 Turn-On Time (Note 11)5µs t H(OFF)H1 and H2 Turn-Off Time (Note 11)10µs E1 and E2 Enable Input ComparatorsV REF E1 and E2 Input Threshold Voltage 3.6V ≤ V V1, V V2 ≤ 36V, –40°C to 85°C 4V ≤ V V1, V V2 ≤ 36V, –40°C to 125°C 1.180 1.180 1.215 1.215 1.240 1.240V V I E E1 and E2 Input Leakage Current 0V ≤ V E1, V E2 ≤ 1.5V ●–100100nA I G(ENOFF)Source Current When Other Channel Enabled (Note 13) LTC4416 LTC4416-1–9 –500–3µA µAThe ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at T A = 25°C. V1 = V2 = 12V, E1 = 2V, E2 = GND, GND = 0V. Current into a pin is positive and current out of a pin is negative. All voltages are referenced to GND, unless otherwise specified.ELECTRICAL CHARACTERISTICSNote 8: V1 and V2 are held at 12V and V S is stepped from 12.2V to 11.8V to trigger the event. G1 and G2 voltages are initially V G(OFF).Note 9: V1 and V2 are held at 12V and V S is stepped from 11.8V to 12.2V to trigger the event. G1 and G2 voltages are initially V G(ON).Note 10: H1 and H2 are forced to 2V. E1 and E2 are forced to 1.5V to measure the off current of H1 and H2. H1 and H2 are forced with 1mA to measure the on voltage of H1 and H2.Note 11: H1 and H2 are forced to 2V. E1 and E2 are stepped from 1.3V to 1.1V to measure t S(ON). E1 and E2 are stepped from 1.1V to 1.3V to measure t S(OFF).Note 12: V1 and V2 are held at 12V and G1 and G2 are forced to 9V. V S is set to 12.05V to measure the source current at either G1 or G2.Note 13: V1 and V2 are held at 12V and G1 and G2 are forced to 9V. V S is set to 12V to measure the source current at either G1 or G2 when the channel is deselected.Note 14: V1 and V2 are held at 12V, V S = 11.96V and G1 and G2 have a 4k resistor each to 9V. Measure the delay after the channel is disabled until the gate signal begins to pull high.LTC4416/LTC4416-14416faTYPICAL PERFOR A CE CHARACTERISTICSU WV RTO vs Temperature and Supply VoltageSUPPLY VOLTAGE (V)020V F R (m V )2530354051015204416 G0125303540SUPPLY VOLTAGE (V)0V R T O (m V )–22–21–201525404416 G02–23–24–255103035TEMPERATURE (°C)0.80C U R R E N T (A )0.901.001.101.204416 G03Normalized Quiescent Supply Current vs TemperatureV FR vs Temperature and Supply VoltageV Gn(ON) vs Temperature and V INV1, V2 and V S Pin Leakage vs TemperatureTEMPERATURE (°C)–50CU R R E N T (µA )–1.00–0.751504416 G04–1.25–1.5050100–0.25–0.50TEMPERATURE (°C)8.658.758.954416 G058.558.458.358.258.85V G n (O N ) (V )TEMPERATURE (°C)–50V G n (O F F ) (V )0.200.301504416 G060.1000501000.500.40V Gn(OFF) vs Temperature and I Gnt G(ON) vs Temperaturet G(OFF) vs TemperatureTEMPERATURE (°C)–50t G (O N ) (µs )50751504416 G072500100TEMPERATURE (°C)–50t G (O F F ) (µs )3540451504416 G08302515050100205550LTC4416/LTC4416-14416faPI FU CTIO SU U UH1 (Pin 1): Open-Drain Comparator Output of the E1 Pin. If E1 > V REF , the H1 pin will go high impedance, otherwise the pin will be grounded. The maximum voltage permitted on this pin is 7V. This pin provides support for setting up hysterisis to an external resistor network.E1 (Pin 2): LTC4416 Comparator Enable Input. A high signal greater than V REF will enable the V1 path. The ideal diode action will then determine if the V1 path should turn on by controlling any PFET(s) connected to the G1 pin. If the E1 signal is driven low, the V1 path will perform a “soft-off” provided the PFET(s) are properly configured for blocking DC current. An internal current sink will pull the E1 pin down when the E1 input exceeds 1.5V.E1 (Pin 2): LTC4416-1 Comparator Enable Input. A high signal greater than V REF will enable the V1 path. The ideal diode action will then determine if the V1 path should turn on by controlling any PFET(s) connected to the G1 pin. If the E1 signal is driven low, the V1 path will be quickly disabled by enabling the “fast-off” feature, pulling the G1 gate high. An internal current sink will pull the E1 pin down when the E1 input exceeds 1.5V.GND (Pin 3): Ground. This pin provides a power return path for all the internal circuits.E2 (Pin 4): LTC4416 Comparator Enable Input. A low signal less than V REF will enable the V2 path. The ideal diode action will then determine if the V2 path should turn on by controlling any PFET(s) connected to the G2 pin. If the E2 signal is driven high, the V2 path will perform a “soft-off” provided the PFET(s) are properly configured for blocking DC current. An internal current sink will pull the E2 pin down when the E2 input exceeds 1.5V.E2 (Pin 4): LTC4416-1 Comparator Enable Input. A low signal less than V REF will enable the V2 path. The ideal diode action will then determine if the V2 path should turn on by controlling any PFET(s) connected to the G2 pin. If the E2 signal is driven high, the V2 path will be quickly disabled by enabling the “fast-off” feature, pulling the G2 gate high. An internal current sink will pull the E2 pin down when the E2 input exceeds 1.5V.H2 (Pin 5): Open-Drain Comparator Output of the E2 Pin. If E2 > V REF , the H2 pin will go high impedance, otherwisethe pin will be grounded. The maximum voltage permitted on this pin is 7V. This pin provides support for setting up hysterisis to an external resistor network.G2 (Pin 6): Second P-Channel MOSFET Power Switch Gate Drive Pin. This pin is directed by the second power controller to maintain a forward regulation voltage (V FR ) of 25mV between the V2 and V S pins when V2 is greater than V S . When V2 is less than V S , the G2 pin will pull up to the V S pin voltage, turning off the second P-channel power switch.V2 (Pin 7): Second Input Supply Voltage. Supplies power to the second power controller and the band-gap refer-ence. V2 is one of the two voltage sense inputs to the second internal power controller (the other input to the second internal power controller is the V S pin). This input is usually supplied power from the second, or backup, power source. This pin can be bypassed to ground with a capacitor in the range of 0.1µF to 10µF if needed to suppress load transients.V S (Pin 8): Power Sense Input Pin. Supplies power to the internal circuitry of both the first and second power controller and the band-gap reference. This pin is also a voltage sense input to both internal analog controllers (the other input to the first controller is the V1 pin and the other input to the second controller is the V2 pin.) This input may also be supplied power from an auxiliary source which also supplies current to the load.V1 (Pin 9): First Input Supply Voltage. Supplies power to the first power controller and the band-gap reference. V1 is one of the two voltage sense inputs to the first internal power controller (the other input to the first internal power controller is the V S pin). This input is usually supplied power from the first, or primary, power source. This pin can be bypassed to ground with a capacitor in the range of 0.1µF to 10µF if needed to suppress load transients.G1 (Pin 10): First P-Channel MOSFET Power Switch Gate Drive Pin. This pin is directed by the first power controller to maintain a forward regulation voltage (V FR ) of 25mV between the V1 and V S pins when V1 is greater than V S . When V1 is less than V S , the G1 pin will pull up to the V S pin voltage, turning off the first P-channel power switch.LTC4416/LTC4416-14416faBLOCK DIAGRAW4416 BDOperation can best be understood by referring to the Block Diagram which illustrates the internal circuit blocks. The LTC4416/LTC4416-1 are divided into three sections, namely:1. The channel 1 controller consisting of A1, C1, the “first analog contoller,” the G1 drivers and the H1 output driver.2. The band-gap reference3. The channel 2 controller consisting of A2, C2, the “second analog controller,” the G2 drivers and the H2 output driver.Each of the three sections has its own derived internal power supply referred to as a rail. RAIL1 provides power to the channel 1 controller. RAIL2 provides power to the channel 2 controller. The internal RAILBG provides power to the band-gap reference. The internal rail1 derives its power from the higher voltage of V1 and V S . The internal rail2 derives its power from the higher voltage of V2 and V S . RAILBG derives its power from the highest voltage of V1, V2, and V S . All three sections share a common ground connected to the GND pin.OPERATIOULTC4416/LTC4416-14416faOPERATIOUThe band-gap reference provides internal bias currents used by the channel 1 and channel 2 controllers. It also provides a precision voltage reference, V REF , used by com-parators C1 and C2. The band-gap reference is powered as long as a minimum operational voltage is present on either V1, V2, or V S .The C1 and C2 comparators provide a fixed comparison between the E1 and E2 inputs, respectively, and the in-ternal V REF signal. The comparator outputs are directly represented by the H1 and H2 open-drain outputs. The output states of H1 and H2 are not dependent upon the relative voltage difference between V V1 – V VS and V V2 – V VS , respectively. If V E1 is less than V REF , the H1 open-drain output will be low impedance to GND. If V E2 is less than V REF , the H2 open-drain output will be low impedance to GND.The A1 and A2 circuits act both as a high side transconductance amplifiers and as comparators. Both A1 and A2 act identically when the analog controllers are fully enabled. The relationship of the G1 current is represented by Figure 1.When V V1 – V VS < V RTO , the A1 activates the reverse turn-off condition and the I G1 current is I G(OFF). When V RTO < V V1 – V VS < V FR , the A1 acts as a class A output and the I G1 current is fixed at I G(SRC). As the V V1 – V VS voltageV1 – V VSI Figure 1. I G1 vs V V1 – V VSapproaches the forward regulation voltage, V FR , the I G(SNK) current will be proportional to V V1 – V VS . When V V1 – V VS > V FON , the A1 activates the fast-on condition, t G(ON), and the I G1 current is set to I GFON(SNK).LTC4416 OPERATIONThe interaction of the LTC4416 analog controllers distin-guish the operation of the LTC4416 from a simple circuit using two PowerPath controllers. Table 1 explains the different operation modes of the analog controllers.Table 1. LTC4416 Operational ModesE1E2Operation Mode I G(OFF)1I G(OFF)210Load Sharing Enabled Enabled1Sense V1 is Less Than V2EnabledSense 0V1 is Greater Than V2Enabled 0X Channel 1 Disabled. Do Not Use DisabledX 1Channel 2 Disabled. Do Not UseDisabled 01Both Channels DisabledDisabled DisabledThe LTC4416 has six modes of operation. Each mode of operation is dependent upon the configuration of the E1 and E2 input pins. Load Sharing OperationThe load sharing mode configures the LTC4416 into two independent PowerPath controllers. This is accomplished by fully enabling both the first analog controller and the second analog controller. Both channels will implement the gate drive outlined in Figure 1.V1 is Less Than V2 OperationChannel 1 is fully enabled. If V V1 – V VS < V RTO , channel 1 will implement all of the I G1 currents listed in Figure 1.When V E2 is above the V REF threshold, channel 2 is in a “soft-off mode”. This means that G2 will only provide an I G(SRC) current instead of either an I G(SRC) or an I G(OFF) current.When V E2 is below the V REF threshold, channel 2 is fully enabled, and G2 will become active implementing the I G output current listed in Figure 1.LTC4416/LTC4416-14416faV1 is Greater Than V2 OperationWhen V E1 is below the V REF threshold, channel 1 is in a “soft-off mode”. This means that G1 will only provide an I G(SRC) current instead of an I G(SNK) or an I GFON(SNK) current.When V E1 is above the V REF threshold, channel 1 is im-mediately fully enabled, and G1 will become active imple-menting the output current listed in Figure 1.Channel 2 is fully enabled. If V V1 – V VS < V RTO , channel 2 will implement all of the I G2 currents listed in Figure 1.Channel 1 is DisabledThe LTC4416 is not designed to have channel 1 disabled by grounding E1 and leaving E2 in an indeterminate state. If this happens, the channel 2 PowerPath controller will not have reverse turn-off capability. No electrical harm to the LTC4416 will occur.Channel 2 is DisabledThe LTC4416 is not designed to have channel 2 disabled by connecting E2 high and leaving E1 in an indeterminate state. If this happens, the channel 1 PowerPath controller will not have reverse turn-off capability. No electrical harm to the LTC4416 will occur.Both Channels DisabledWhen both channels of the LTC4416 are disabled, both G1 and G2 currents are set to I G(SRC).LTC4416-1 OPERATIONThe LTC4416-1 is designed for overvoltage/undervoltage protection or when either voltage path must be turned off rapidly, regardless of the status of the other voltage input. The LTC4416-1 does not implement the soft-off feature implemented in the LTC4416. The E1 and E2 inactive will force the I G current of their respective channel to I G(OFF). Table 2 explains the operation of the E1 and E2 inputs. The term “active” implies that I G(OFF) current is forced on the Gn pins regardless of the V Vn – V VS value. The term “enabled” implies that I G(OFF) current is provide on the Gn pins if and only if V Vn – V VS < V RTO .Table.2 LTC4416-1 Operational ModesE1E2Operation Mode I G(OFF)1I G(OFF)20X Undervoltage Protection ActiveX 1Overvoltage Protection Active 1X Channel 1 PowerPath EnabledXChannel 2 PowerPathEnabledLTC4416The LTC4416 is designed to support three major ap-plications. The first two applications assume that V1 is the primary power source and V2 is the backup power source. The first application is where the V1 power supply is normally less than V2. The second application is where the V1 power supply is normally greater than V2. The third application addresses the load sharing case where both V1 and V2 are relatively equal in value.V1 is Less Than V2Figure 2 illustrates the external resistor configuration for this case.Figure 2OPERATIOUAPPLICATIO S I FOR ATIOW UUU BACKUP SUPPLYV2 = 14.4VV1 = 9V (FAIL)Q1SUP75P03_07SLTC4416/LTC4416-14416faAPPLICATIO S I FOR ATIOW UUU This configuration would be used where V1 is a 12V power supply and the V2 power supply is a 4-cell Li-Ion battery pack. When V1 is 12V, E2 disables the V2 source from being connected to V S through Q2A and Q2B by forcing G2 to V2, H2 is open circuit. E1 is connected to a voltage greater than the V REF to keep the V1 to V S path active. The V S output can be shut completely off by grounding the E1 input. The LTC4416 takes its power from the higher of V1, V2 and V S . This configuration will provide power from V1 to V S until the V1 supply drops below 9V.When V1 drops below 9V, the H2 pin closes to GND, G2 drops to a V CLAMP below V2 and G1 rises to the V S volt-age level. V2 will supply current to V S until V1 rises above 10.8V. The H1 output will be open until the E1 input drops below the V REF voltage level.The V1 V FAIL is determined by:V V R A R c R cV k kFAIL ETH =+=+•.•..2221222158249249k kV=898.The V1 V RESTORE is determined by:V V R A R c R E R c R E V RESTORE ETH=+()()=•.•22222122215582491052491051081k k kk kV+()=...V1 is Greater Than V2Figure 3 illustrates the external resistor configuration forthis case.This configuration would be used where V1 is a 12V power supply and the V2 power supply is a 3-cell Li-Ion battery pack. When V1 is 16V, E1 enables the V1 source as being the primary supply, thus disabling the V2 supply since V1 > V2. When E1 > V REF , the H1 output is open. The V S output can be shut completely off by grounding the H1 input and forcing E2 > V REF . The LTC4416 takes its power from the higher of V1, V2 and V S . This configuration will provide power from V1 to V S until the V1 supply drops below 12V.When V1 drops below 12V, the H1 pin closes to GND,G2 drops to a V CLAMP below V2 and G1 rises to the V1 voltage level. V2 will supply current to V S until V1 rises above 13.5V. The H2 output will be shorted to GND until the E2 input goes above the V REF voltage level.The V1 V FAIL is determined by:V V R A R c R cV k kFAIL ETH =+=+•.•..1111222221249249k k V=1207.The V1 V RESTORE is determined by:V V R A R c R D R c R D V RESTORE ETH=+()()=•.•11111122222212491872491871351k k kk kV+()=...Load SharingFigure 4 illustrates the configuration for this case.This configuration would be used where V1 and V2 arerelatively the same voltage. In this case the LTC4416 acts as two interconnected ideal diode controllers. V S will be supplied by the higher of the two supplies, V1 and V2. If V1 and V2 are exactly the same, then 50% of the current for V S will be supplied by each supply. As the two suppliesBACKUP SUPPLYV2 = 10.8VV1 = 12V (FAIL)SUP75P03_07SUP75P03_07SFigure 3LTC4416/LTC4416-14416fadiffer by more than 100mV, 100% of the load will come from the higher of V1 or V2.The user has the option of using E1 and E2 to disable one of the two supplies by connecting them to a digital controller. If E1 is brought low, V1 will no longer supply current to V S . If E2 is brought high, V2 will no longer sup-ply current to V S . If E1 is brought low and E2 is brought high, V S will be disabled.Figure 5 shows the same application without the shut-down option. It has one-half the losses of Figure 4 and is configured for 5V rails.disabled. This rapid turn-off feature is desirable when the supply cannot tolerate certain voltage excursions under load, or when the load is being protected from a rapidly changing input supply.Under and Overvoltage ShutdownRefer to Figure 6 for an application circuit which disables the power to the load when the input voltage gets too low or too high. When V IN starts from zero volts, the load to the output is disabled until V IN reaches 5.5V. The V1 path is enabled and the load remains on the input until the supply exceeds 13.5V. At that voltage, the V2 path is disabled. As the input falls, the voltage source will be reconnected to the load when the input drops to 12V and the V2 path is enabled. Finally, the load will be removed from the input supply when the voltage drops below 5V.APPLICATIO S I FOR ATIOW UUUV2 = 12VSi7483ADPSi7483ADP TO HOSTCONTROLLERSSi7495DPQ1S Figure 4Figure 5. Dual PowerPath for Current SharingLTC4416-1The LTC4416-1 will support all three of the LTC4416 applications without the “soft-off” feature. The only dif-ference in the two designs is the LTC4416-1 will rapidly switch off the load from a supply whenever a channel isGNDV INV OUT UV ENABLED AT 5V, V IN RESTORED TO LOAD WHEN V IN RISES TO 5.5V OV ENABLED AT 13.5V, V IN RESTORED TO LOAD WHEN V IN FALLS TO 12VFigure 6UndervoltageV V R A R c R cV k kk FAIL ETH =+=+•.•..111122275243243=499.VV V R A R c R D R c R DV RESTORE ETH=+()()=•.•1111112227552431822431825497k k k k kV+()=...。

LTC1871中文资料

U APPLICATIO S
s s
Telecom Power Supplies Portable Electronic Equipment
TYPICAL APPLICATIO
VIN 3.3V L1 1µH D1 90 RUN ITH RC 22k CC1 6.8nF CC2 47pF R2 37.4k 1% R1 12.1k 1% FB FREQ RT 80.6k 1% MODE/SYNC LTC1871 INTVCC GATE GND CVCC 4.7µF X5R SENSE VIN VOUT 5V 7A (10A PEAK) COUT2 22µF 6.3V X5R ×2 GND 80 EFFICIENCY (%) 70 60 50 40 30 0.001 100
元器件交易网
LTC1871 Wide Input Range, No RSENSETM Current Mode Boost, Flyback and SEPIC Controller
FEATURES
s s s
DESCRIPTIO
s s s s s
s s s s s
s
High Efficiency (No Sense Resistor Required) Wide Input Voltage Range: 2.5V to 36V Current Mode Control Provides Excellent Transient Response High Maximum Duty Cycle (92% Typ) ±2% RUN Pin Threshold with 100mV Hysteresis ±1% Internal Voltage Reference Micropower Shutdown: IQ = 10µA Programmable Operating Frequency (50kHz to 1MHz) with One External Resistor Synchronizable to an External Clock Up to 1.3 × fOSC User-Controlled Pulse Skip or Burst Mode® Operation Internal 5.2V Low Dropout Voltage Regulator Output Overvoltage Protection Capable of Operating with a Sense Resistor for High Output Voltage Applications Small 10-Lead MSOP Package

LTC4446EMS8E#PBF;LTC4446EMS8E#TRPBF;LTC4446IMS8E#PBF;LTC4446IMS8E#TRPBF;中文规格书,Datasheet资料

14446fTYPICAL APPLICATIONFEATURESAPPLICATIONSDESCRIPTIONLow Side N-ChannelMOSFET DriverThe L TC ®4446 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a DC/DC converter with supply voltages up to 100V . The powerful driver ca-pability reduces switching losses in MOSFETs with high gate capacitance. The L TC4446’s pull-up for the top gate driver has a peak output current of 2.5A and its pull-down has an output impedance of 1.2Ω. The pull-up for the bot-tom gate driver has a peak output current of 3A and the pull-down has an output impedance of 0.55Ω.The L TC4446 is conﬁ gured for two supply-independent inputs. The high side input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 114V above ground.The L TC4446 contains undervoltage lockout circuits that disable the external MOSFETs when activated. The L TC4446 is available in the thermally enhanced 8-lead MSOP package.The L TC4446 does not have adaptive shoot-through pro-tection. For similar drivers with adaptive shoot-through protection, please refer to the chart below.PARAMETER L TC4446L TC4444L TC4444-5Shoot-Through Protection No Yes Yes Absolute Max TS 100V 100V 100V MOSFET Gate Drive 7.2V to 13.5V 7.2V to 13.5V 4.5V to 13.5VV CC UV +6.6V 6.6V 4V V CC UV– 6.15V 6.15V 3.55V nBootstrap Supply Voltage Up to 114V n Wide V CCVoltage: 7.2V to 13.5V n 2.5A Peak Top Gate Pull-Up Current n 3A Peak Bottom Gate Pull-Up Current n 1.2Ω Top Gate Driver Pull-Down n 0.55Ω Bottom Gate Driver Pull-Down n 5ns Top Gate Fall Time Driving 1nF Load n 8ns Top Gate Rise Time Driving 1nF Load n 3ns Bottom Gate Fall Time Driving 1nF Load n 6ns Bottom Gate Rise Time Driving 1nF Loadn Drives Both High and Low Side N-Channel MOSFETs n Undervoltage Lockoutn Thermally Enhanced 8-Pin MSOP PackagenDistributed Power Architecturesn Automotive Power Supplies n High Density Power Modules n Telecommunication SystemsT wo Switch Forward ConverterL TC4446 Driving a 1000pF Capacitive LoadL , L T , L TC and L TM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. Protected by U.S. Patents including 6677210.V BINP 5V/DIVBG 10V/DIV TINP 5V/DIV TG-TS 10V/DIV20ns/DIV4446 TA01b/24446fPIN CONFIGURATIONABSOLUTE MAXIMUM RATINGSSupply VoltageV CC.........................................................–0.3V to 14V BOOST – TS ...........................................–0.3V to 14V TINP Voltage .................................................–2V to 14V BINP Voltage .................................................–2V to 14V BOOST Voltage ........................................–0.3V to 114V TS Voltage ...................................................–5V to 100V Operating Temperature Range (Note 2)....–40°C to 85°C Junction Temperature (Note 3) .............................125°C Storage Temperature Range ...................–65°C to 150°C Lead Temperature (Soldering, 10 sec) ..................300°C(Note 1)1234TINP BINP V CC BG8765TS TG BOOST NCTOP VIEW9MS8E PACKAGE 8-LEAD PLASTIC MSOPT JMAX = 125°C, θJA = 40°C/W , θJC = 10°C/W (NOTE 4)EXPOSED PAD (PIN 9) IS GND, MUST BE SOLDERED TO PCBORDER INFORMATIONELECTRICAL CHARACTERISTICSSYMBOL PARAMETER CONDITIONSMIN TYP MAX UNITS Gate Driver Supply, V CC V CC Operating Voltage7.213.5V I VCCDC Supply Current TINP = BINP = 0V350550μA UVLO Undervoltage Lockout ThresholdV CC Rising V CC Falling Hysteresis l l6.005.606.606.154507.206.70V V mV Bootstrapped Supply (BOOST – TS)I BOOSTDC Supply Current TINP = BINP = 0V 0.12μA Input Signal (TINP , BINP)V IH(BG)BG Turn-On Input Threshold BINP Ramping High l 2.25 2.75 3.25V V IL(BG)BG Turn-Off Input Threshold BINP Ramping Low l 1.85 2.3 2.75V V IH(TG)TG Turn-On Input Threshold TINP Ramping High l 2.25 2.75 3.25V V IL(TG)TG Turn-Off Input Threshold TINP Ramping Lowl 1.852.3 2.75V I TINP(BINP)Input Pin Bias Current ±0.01±2μA High Side Gate Driver Output (TG)V OH(TG)TG High Output Voltage I TG = –10mA, V OH(TG) = V BOOST – V TG 0.7V V OL(TG)TG Low Output Voltage I TG = 100mA, V OL(TG) = V TG –V TSl 120220mV I PU(TG)TG Peak Pull-Up Current l 1.72.5A R DS(TG)TG Pull-Down Resistance l1.22.2ΩThe l denotes the speciﬁ cations which apply over the full operating temperature range, otherwise speciﬁ cations are at T A = 25°C. V CC = V BOOST = 12V , V TS = GND = 0V , unless otherwise noted.LEAD FREE FINISH TAPE AND REEL PART MARKING*PACKAGE DESCRIPTION TEMPERATURE RANGE L TC4446EMS8E#PBF L TC4446EMS8E#TRPBF L TDPZ 8-Lead Plastic MSOP –40°C to 85°C L TC4446IMS8E#PBFL TC4446IMS8E#TRPBFL TDPZ8-Lead Plastic MSOP–40°C to 85°CConsult L TC Marketing for parts speciﬁ ed with wider operating temperature ranges. *The temperature grade is identiﬁ ed by a label on the shipping container .Consult L TC Marketing for information on non-standard lead based ﬁ nish parts.For more information on lead free part marking, go to: http://www.linear .com/leadfree/ For more information on tape and reel speciﬁ cations, go to: http://www.linear .com/tapeandreel//34446fNote 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime.Note 2: The L TC4446E is guaranteed to meet speciﬁ cations from 0°C to 85°C. Speciﬁ cations over the –40°C to 85°C operatingtemperature range are assured by design, characterization and correlationELECTRICAL CHARACTERISTICS The l denotes the speciﬁ cations which apply over the full operatingtemperature range, otherwise speciﬁ cations are at T A = 25°C. V CC = V BOOST = 12V , V TS = GND = 0V , unless otherwise noted.SYMBOL PARAMETERCONDITIONSMINTYP MAXUNITS Low Side Gate Driver Output (BG)V OH(BG)BG High Output Voltage I BG = –10mA, V OH(BG) = V CC – V BG0.7VV OL(BG)BG Low Output Voltage I BG = 100mAl 55110mV I PU(BG)BG Peak Pull-Up Current l 23A R DS(BG)BG Pull-Down Resistance l0.55 1.1ΩSwitching Time (BINP (TINP) is Tied to Ground While TINP (BINP) is Switching. Refer to Timing Diagram)t PLH(TG)TG Low-High (Turn-On) Propagation Delay l 2545ns t PHL(TG)TG High-Low (Turn-Off) Propagation Delay l 2240ns t PLH(BG)BG Low-High (Turn-On) Propagation Delay l 1935ns t PHL(BG)BG High-Low (Turn-Off) Propagation Delay l 1430ns t DM(BGTG)Delay Matching BG Turn-Off and TG Turn-On l –151035ns t DM(TGBG)Delay Matching TG Turn-Off and BG Turn-On l –25–325ns t r(TG)TG Output Rise Time 10% – 90%, C L = 1nF 10% – 90%, C L = 10nF880ns ns t f(TG)TG Output Fall Time 10% – 90%, C L = 1nF 10% – 90%, C L = 10nF550ns ns t r(BG)BG Output Rise Time 10% – 90%, C L = 1nF 10% – 90%, C L = 10nF660ns ns t f(BG)BG Output Fall Time 10% – 90%, C L = 1nF 10% – 90%, C L = 10nF 330ns nswith statistical process controls. The L TC4446I is guaranteed over the full –40°C to 85°C operating temperature range.Note 3: T J is calculated from the ambient temperature T A and power dissipation P D according to the following formula: T J = T A + (P D • θJA °C/W)Note 4: Failure to solder the exposed back side of the MS8E package to the PC board will result in a thermal resistance much higher than 40°C/W .TYPICAL PERFORMANCE CHARACTERISTICSV CC Supply Quiescent Current vs VoltageBOOST-TS Supply Quiescent Current vs VoltageV CC Supply Current vs TemperatureV CC SUPPL Y VOL TAGE (V)00Q U I E S C E N T C U R R E N T (μA )501502002506789101112134504446 G011001234514300350400BOOST SUPPL Y VOL TAGE (V)00Q U I E S C E N T C U R R E N T (μA )501502002506789101112134004446 G021001234514300350TEMPERATURE (°C)V C C S U P P L Y C U R R E N T (μA )3503603704446 G03330300–40–25–105203550658095110125380340320310/44446fTYPICAL PERFORMANCE CHARACTERISTICSBoost Supply Current vs TemperatureOutput Low Voltage (V OL ) vs Supply VoltageOutput High Voltage (V OH ) vs Supply VoltageInput Thresholds (TINP , BINP) vs Supply VoltageInput Thresholds (TINP , BINP) vs TemperatureInput Thresholds (TINP , BINP) Hysteresis vs VoltageInput Thresholds (TINP , BINP) Hysteresis vs TemperatureV CC Undervoltage Lockout Thresholds vs TemperatureRise and Fall Time vs V CC Supply VoltageTEMPERATURE (°C)B O O S T S U P P L YC U R R E N T (μA )2503003504446 G041500–40–25–10520355065809511012540020010050SUPPL Y VOL TAGE (V)7O U T P U T V O L T A G E (m V )140104446 G058040891120016012010060121314SUPPL Y VOL TAGE (V)75T G O R B G O U T P U T V O L T A G E (V )689101512911124446 G0671314118101314SUPPL Y VOL TAGE (V)72.1T G O R B G I N P U T T H R E S H O L D (V )2.22.42.52.63.12.8911124446 G072.32.93.02.78101314TEMPERATURE (°C)–25T G O R B G I N P U T T H R E S H O L D (V )2.62.83.0954446 G082.42.22.52.72.92.32.12.053565–10–40110205080125SUPPL Y VOL TAGE (V)78375T G O R B G I N P U T T H R E S H OL D H Y S T E R E S I S (m V )425500911124446 G09400475450101314TEMPERATURE (°C)–40–25375T G O R B G I N P U T T H R E S H O L D H Y S T E R E S I S(m V )425500–105205065804446 G104004754503511095125TEMPERATURE (°C)–406.0V C C S U P L L Y V O L T A G E (V )6.16.36.46.56.7–2535654446 G116.26.62095125110–1055080SUPPL Y VOL TAGE (V)7R I S E /F A L L T I M E (n s )122830222632911124446 G12820161024618148101314/54446fTYPICAL PERFORMANCE CHARACTERISTICSRise and Fall Time vs Load CapacitancePeak Driver (TG, BG) Pull-Up Current vs TemperatureOutput Driver Pull-Down Resistance vs TemperaturePropagation Delay vs V CC Supply VoltagePropagation Delay vs TemperatureLOAD CAPACITANCE (nF)1R I S E /F A L L T I M E (n s )40506094445 G1330200357210468108070TEMPERATURE (°C)–402.0P U L L -U P C U R R E N T (A )2.22.62.83.03.4–2535654446 G142.43.22095125110–1055080TEMPERATURE (°C)–25O U T P U T D R I V E R P U L L -D O W N R E S I S T A C N E (Ω)1.21.62.0954446 G150.80.41.01.41.80.60.253565–10–40110205080125SUPPL Y VOL TAGE (V)710P R O P A G A T I O N D E L A Y (n s )121618203024911124444 G16142628228101314TEMPERATURE (°C)–402P R O P A G A T I O N D E L A Y (n s )717222737–2535654446 G1712322095125110–1055080Switching Supply Current vs Input FrequencySwitching Supply Current vs Load CapacitanceSWITCHING FREQUENCY (kHz)S U P P L Y C U R R E N T (m A )1.52.02.560010004446 G181.00.502004008003.03.54.0LOAD CAPACITANCE (nF)1S U P P L Y C U R R E N T (m A )1010013450.127896104446 G19/64446fPIN FUNCTIONSBLOCK DIAGRAMTINP (Pin 1): High Side Input Signal. Input referenced to GND. This input controls the high side driver output (TG).BINP (Pin 2): Low Side Input Signal. This input controls the low side driver output (BG).V CC (Pin 3): Supply. This pin powers input buffers, logic and the low side gate driver output directly and the high side gate driver output through an external diode con-nected between this pin and BOOST (Pin 6). A low ESR ceramic bypass capacitor should be tied between this pin and GND (Pin 9).BG (Pin 4): Low Side Gate Driver Output (Bottom Gate). This pin swings between V CC and GND.NC (Pin 5): No Connect. No connection required.BOOST (Pin 6): High Side Bootstrapped Supply. An ex-ternal capacitor should be tied between this pin and TS (Pin 8). Normally, a bootstrap diode is connected between V CC (Pin 3) and this pin. Voltage swing at this pin is from V CC – V D to V IN + V CC – V D , where V D is the forward volt-age drop of the bootstrap diode.TG (Pin 7): High Side Gate Driver Output (Top Gate). This pin swings between TS and BOOST .TS (Pin 8): High Side MOSFET Source Connection (Top Source).Exposed Pad (Pin 9): Ground. Must be soldered to PCB ground for optimal thermal performance.TIMING DIAGRAMTINP (BINP)BG (TG)BINP (TINP)TG (BG)/OPERATIONOverviewThe L TC4446 receives ground-referenced, low voltage digi-tal input signals to drive two N-channel power MOSFETs in a synchronous buck power supply conﬁ guration. The gate of the low side MOSFET is driven either to V CC or GND, depending on the state of the input. Similarly, the gate of the high side MOSFET is driven to either BOOST or TS by a supply bootstrapped off of the switching node (TS). Input StageThe L TC4446 employs CMOS compatible input thresholds that allow a low voltage digital signal to drive standard power MOSF ETs. The LTC4446 contains an internal voltage regulator that biases both input buffers for high side and low side inputs, allowing the input thresholds (V IH = 2.75V, V IL = 2.3V) to be independent of variations inV CC. The 450mV hysteresis between V IH and V IL eliminates false triggering due to noise during switching transitions. However, care should be taken to keep both input pins (TINP and BINP) from any noise pickup, especially in high frequency, high voltage applications. The L TC4446 input buffers have high input impedance and draw negligible input current, simplifying the drive circuitry required for the inputs.Output StageA simpliﬁ ed version of the L TC4446’s output stage is shown in Figure 1. The pull-up devices on the BG and TG outputs are NPN bipolar junction transistors (Q1 and Q2). The BG and TG outputs are pulled up to within an NPN V BE (~0.7V) of their positive rails (V CC and BOOST, respectively). Both BG and TG have N-channel MOSFET pull-down devices (M1 and M2) which pull BG and TG down to their nega-tive rails, GND and TS. The large voltage swing of the BG and TG output pins is important in driving external power MOSFETs, whose R DS(ON) is inversely proportional to the gate overdrive voltage (V GS − V TH).Rise/Fall TimeThe L TC4446’s rise and fall times are determined by the peak current capabilities of Q1 and M1. The predriver that drives Q1 and M1 uses a nonoverlapping transition scheme to minimize cross-conduction currents. M1 is fully turned off before Q1 is turned on and vice versa.Since the power MOSFET generally accounts for the ma-jority of the power loss in a converter, it is important to quickly turn it on or off, thereby minimizing the transition time in its linear region. An additional beneﬁ t of a strong pull-down on the driver outputs is the prevention of cross- conduction current. For example, when BG turns the low side (synchronous) power MOSFET off and TG turns the high side power MOSFET on, the voltage on the TS pin will rise to V IN very rapidly. This high frequency positive voltage transient will couple through the C GD capacitance of the low side power MOSFET to the BG pin. If there is an insufﬁ cient pull-down on the BG pin, the voltage on the BG pin can rise above the threshold voltage of the low side power MOSFET, momentarily turning it back on. With Figure 1. Capacitance Seen by BG and TG During Switching/74446fOPERATIONboth the high side and low side MOSFETs conducting, signiﬁ cant cross-conduction current will ﬂ ow through the MOSFETs from V IN to ground and will cause substantial power loss. A similar effect occurs on TG due to the C GS and C GD capacitances of the high side MOSFET.The powerful output driver of the L TC4446 reduces the switching losses of the power MOSFET, which increase with transition time. The L TC4446’s high side driver is capable of driving a 1nF load with 8ns rise and 5ns fall times using a bootstrapped supply voltage V BOOST-TS of 12V while its low side driver is capable of driving a 1nF Power DissipationTo ensure proper operation and long-term reliability, the L TC4446 must not operate beyond its maximum tem-perature rating. Package junction temperature can be calculated by:T J = T A + P D (θJA)where:T J = Junction temperatureT A = Ambient temperatureP D = Power dissipationθJA = Junction-to-ambient thermal resistance Power dissipation consists of standby and switching power losses:P D = P DC + P AC + P QGwhere:P DC = Quiescent power lossP AC = Internal switching loss at input frequency, f INP QG = Loss due turning on and off the external MOSFET with gate charge QG at frequency f IN load with 6ns rise and 3ns fall times using a supply volt-age V CC of 12V.Undervoltage Lockout (UVLO)The L TC4446 contains an undervoltage lockout detector that monitors V CC supply. When V CC falls below 6.15V, the output pins BG and TG are pulled down to GND and TS, respectively. This turns off both external MOSFETs. When V CC has adequate supply voltage, normal operation will resume.APPLICATIONS INFORMATIONThe L TC4446 consumes very little quiescent current. TheDC power loss at V CC = 12V and V BOOST-TS = 12V is only(350μA)(12V) = 4.2mW.At a particular switching frequency, the internal power lossincreases due to both AC currents required to charge anddischarge internal node capacitances and cross-conduc-tion currents in the internal logic gates. The sum of thequiescent current and internal switching current with noload are shown in the Typical Performance Characteristicsplot of Switching Supply Current vs Input Frequency.The gate charge losses are primarily due to the large ACcurrents required to charge and discharge the capacitanceof the external MOSFETs during switching. For identicalpure capacitive loads C LOAD on TG and BG at switchingfrequency f IN, the load losses would be:P CLOAD = (C LOAD)(f)[(V BOOST-TS)2 + (V CC)2]In a typical synchronous buck conﬁ guration, V BOOST-TSis equal to V CC – V D, where V D is the forward voltagedrop across the diode between V CC and BOOST. If thisdrop is small relative to V CC, the load losses can beapproximated as:P CLOAD = 2(C LOAD)(f IN)(V CC)2/84446fAPPLICATIONS INFORMATIONUnlike a pure capacitive load, a power MOSF ET’s gate capacitance seen by the driver output varies with its V GS voltage level during switching. A MOSFET’s capacitive load power dissipation can be calculated using its gate charge, Q G. The Q G value corresponding to the MOSFET’s V GS value (V CC in this case) can be readily obtained from the manufacturer’s Q G vs V GS curves. For identical MOSFETs on TG and BG:P QG = 2(V CC)(Q G)(f IN)To avoid damage due to power dissipation, the L TC4446 includes a temperature monitor that will pull BG and TG low if the junction temperature rises above 160°C. Normal operation will resume when the junction temperature cools to less than 135°C.Bypassing and GroundingThe LTC4446 requires proper bypassing on the V CC and V BOOST-TS supplies due to its high speed switching (nanoseconds) and large AC currents (Amperes). Careless component placement and PCB trace routing may cause excessive ringing.To obtain the optimum performance from the L TC4446: A. Mount the bypass capacitors as close as possible between the V CC and GND pins and the BOOST and TS pins. The leads should be shortened as much as possible to reduce lead inductance.B. Use a low inductance, low impedance ground plane to reduce any ground drop and stray capacitance. Remember that the L TC4446 switches greater than 3A peak currents and any signiﬁ cant ground drop will degrade signal integrity.C. Plan the power/ground routing carefully. Know where the large load switching current is coming from and going to. Maintain separate ground return paths for the input pin and the output power stage.D. Keep the copper trace between the driver output pin and the load short and wide.E. Be sure to solder the Exposed Pad on the back side of the L TC4446 package to the board. Correctly soldered to a 2500mm2 doublesided 1oz copper board, the L TC4446 has a thermal resistance of approximately 40°C/W for the MS8E package. Failure to make good thermal contact between the exposed back side and the copper board will result in thermal resistances far greater than 40°C/W./94446f104446fTYPICAL APPLICATIONL T C 3722/L T C 4446 420W 36V -72V I N t o 12V /35A I s o l a t e d F u l l -B r i d g e S u p p l yL 1V I –V I 36V T /分销商库存信息:LINEAR-TECHNOLOGYLTC4446EMS8E#PBF LTC4446EMS8E#TRPBF LTC4446IMS8E#PBF LTC4446IMS8E#TRPBF。

EMI,EMS,EMC

EMI电磁干扰(EMI) 英文：(Electro Magnetic Interference)是干扰电缆信号并降低信号完好性的电子噪音，EMI通常由电磁辐射发生源如马达和机器产生的。

种类电磁干扰EMI(Electromagnetic Interference)，有传导干扰和辐射干扰两种。

传导干扰是指通过导电介质把一个电网络上的信号耦合（干扰）到另一个电网络。

辐射干扰是指干扰源通过空间把其信号耦合（干扰）到另一个电网络。

在高速PCB及系统设计中，高频信号线、集成电路的引脚、各类接插件等都可能成为具有天线特性的辐射干扰源，能发射电磁波并影响其他系统或本系统内其他子系统的正常工作。

所谓“干扰”，电磁兼容指设备受到干扰后性能降低以及对设备产生干扰的干扰源这二层意思。

第一层意思如雷电使收音机产生杂音，摩托车在附近行驶后电视画面出现雪花，拿起电话后听到无线电声音等，这些可以简称其为与“BC I” “TV I” “Tel I”，这些缩写中都有相同的“I”（干扰）（BC：广播）那么EMI标准和EMI检测是EMI的哪部分呢？理所当然是第二层含义，即干扰源，也包括受到干扰之前的电磁能量。

其次是“电磁”。

电荷如果静止，称为静电。

当不同的电位向一致移动时，便发生了静电放电，产生电流，电流周围产生磁场。

如果电流的方向和大小持续不断变化就产生了电磁波。

电以各种状态存在，我们把这些所有状态统称为电磁。

所以EMI标准和EMI检测是确定所处理的电的状态，决定如何检测，如何评价。

电磁干扰三要素1．电磁干扰源电磁干扰源包括微处理器、微控制器、传送器、静电放电和瞬时功率执行元件，如机电式继电器、开关电源、雷电等。

在微控制器系统中，时钟电路是最大的宽带噪声发生器，而这个噪声被扩散到了整个频谱。

随着大量的高速半导体器件的发展，其边沿跳变速率很快，这种电路将产生高达300 MHz的谐波干扰。

2．耦合路径噪声被耦合到电路中最容易被通过的导体传递，如图所示为分析电磁干扰机制。

ltc4416工作原理

ltc4416工作原理LTC4416是一款高性能的电源选择器芯片，用于电池供电系统或在多个电源之间进行切换。

它具有低压降、低功耗和高效率的特点，广泛应用于移动设备、便携式电子设备和工业控制系统等领域。

LTC4416的工作原理基于电源选择器的概念，可以将多个电源连接到一个负载上，并根据一定的优先级选择最适合的电源供电。

它通过对输入电压进行监测和比较，以确定最佳的电源供电。

LTC4416通过监测输入电压来确定可用的电源。

它有两个输入端，分别是VIN1和VIN2，可以连接两个不同的电源。

在正常情况下，VIN1和VIN2之间的电压差为0。

当其中一个电源无法提供足够的电压时，LTC4416会自动选择另一个电源来供电。

LTC4416通过比较不同电源的电压来选择最佳的电源供电。

它内部有一个电压比较器，用于比较VIN1和VIN2的电压大小。

当VIN1的电压高于VIN2时，LTC4416会选择VIN1作为供电源；当VIN1的电压低于VIN2时，LTC4416会选择VIN2作为供电源。

这样可以确保负载始终得到最佳的电源供电。

LTC4416还具有过压保护和欠压保护功能，可以有效保护负载和电源。

当输入电压超过设定的过压阈值时，LTC4416会自动切断电源，以防止过压损坏负载。

当输入电压低于设定的欠压阈值时，LTC4416会自动切断电源，以防止欠压对负载造成损害。

LTC4416还具有快速切换功能，可以在不同电源之间快速切换，以确保负载的稳定供电。

它内部有一个快速切换电路，可以在输入电源发生变化时快速切换到另一个电源，以避免负载因电源切换而断电。

LTC4416是一款高性能的电源选择器芯片，具有低压降、低功耗和高效率的特点。

它通过监测和比较不同电源的电压来选择最佳的电源供电，同时具有过压保护、欠压保护和快速切换功能，可以确保负载始终得到稳定的电源供电。

在移动设备、便携式电子设备和工业控制系统等领域有着广泛的应用前景。

MIC4416YM4 TR;MIC4417YM4 TR;MIC4416BM4 TR;MIC4417BM4 TR;中文规格书,Datasheet资料

Typical ApplicationLow-Side Power SwitchMicrel, Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 474-1000 • Pin ConfigurationSOT-143 (M4)Part Number Marking Code*TemperatureStandard Pb-Free Standard Pb-Free Range Configuration Package MIC4416BM4MIC4416YM4D10D10–40ºC to +85ºC Non-Inverting SOT-143 MIC4417BM4MIC4417YM4D11D11–40ºC to +85ºC Inverting SOT-143 *Under bar symbol (_) may not be to scale.Pin DescriptionPin Number Pin Name Pin Function1GND Ground: Power return.2G Gate (Output) : Gate connection to external MOSFET.3VS Supply (Input): +4.5V to +18V supply.4CTL Control (Input): TTL-compatible on/off control input.MIC4416 only: Logic high forces the gate output to the supply voltage.Logic low forces the gate output to ground.MIC4417 only: Logic high forces the gate output to ground. Logic lowforces the gate output to the supply voltage.Electrical Characteristics (Note 3)Parameter Condition (Note 1)MinTyp Max Units Supply Current 4.5V ≤ V S ≤ 18V V CTL = 0V 50200µA V CTL = 5V3701500µA Control Input Voltage 4.5V ≤ V S ≤ 18V V CTL for logic 0 input 0.8V V CTL for logic 1 input2.4V Control Input Current 0V ≤ V CTL ≤ V S –1010µA Delay Time, V CTL Rising V S = 5V C L = 1000pF, Note 242ns V S = 18V C L = 1000pF, Note 23360ns Delay Time, V CTL Falling V S = 5V C L = 1000pF, Note 242ns V S = 18V C L = 1000pF, Note 22340ns Output Rise TimeV S = 5V C L = 1000pF, Note 224ns V S = 18VC L = 1000pF, Note 21440ns Output Fall TimeV S = 5V C L = 1000pF, Note 228ns V S = 18VC L = 1000pF, Note 21640ns Gate Output Offset Voltage 4.5V ≤ V S ≤ 18V V G = high –25mV V G = low25mV Output ResistanceV S = 5V, I OUT = 10mAP-channel (source) MOSFET 7.6ΩN-channel (sink) MOSFET 7.8ΩV S = 18V, I OUT = 10mAP-channel (source) MOSFET 3.510ΩN-channel (sink) MOSFET3.510ΩGate Output Reverse CurrentNo latch up250mAGeneral Note: Devices are ESD protected, however handling precautions are recommended.Note 1:Typical values at T A = 25°C. Minimum and maximum values indicate performance at –40°C ≥ T A ≥ +85°C. Parts production tested at 25°C.Note 2:Refer to “MIC4416 Timing Definitions” and “MIC4417 Timing Definitions” diagrams (see next page).Note 3:Specification for packaged product only.Absolute Maximum RatingsSupply Voltage (V S )....................................................+20V Control Voltage (V CTL )..................................–20V to +20V Gate Voltage (V G ).......................................................+20V Junction Temperature (T J )........................................150°C Lead Temperature, Soldering ...................260°C for 5 sec.Operating RatingsSupply Voltage (V S ).......................................+4.5 to +18V Control Voltage (V CTL )..........................................0V to V S Ambient Temperature Range (T A ).............–40°C to +85°C Thermal Resistance (θJA )......................................220°C/W (soldered to 0.25in 2 copper ground plane)DefinitionsMIC4416/MIC4417 Operating States90%10%10%0V 5V V S OUTPUTINPUT90%0VMIC4416 (Noninverting) Timing Definitions90%10%10%0V 5VV S OUTPUTINPUT90%0VMIC4417 (Inverting) Timing DefinitionsTest CircuitV OUTT I M E (n s )SUPPLY VOLTAGE (V)Rise and Fall Time vs. Supply VoltageT I M E (n s )TEMPERATURE (°C)Rise and Fall Time vs. TemperatureT I M E (n s )TEMPERATURE (°C)Rise and Fall Time vs. TemperatureTypical CharacteristicsNote 3S U P P L Y C U R R E N T (µA )SUPPLY VOLTAGE (V)Quiescent Supply Currentvs. Supply VoltageS U P P L Y C U R R E N T (m A )CAPACITANCE (nF)Supply Current vs. Load Capacitance1010010002000S U P P L Y C U R R E N T (m A )FREQUENCY (kHz)Supply CurrentT I M E (µs )CAPACITANCE (nF)Output Rise and Fall Time vs. Load CapacitanceT I M E (n s )SUPPLY VOLTAGE (V)Delay Time vs. Supply VoltageT I M E (n s )TEMPERATURE (°C)Delay Time vs. TemperatureT I M E (n s )TEMPERATURE (°C)Delay Time vs. TemperatureS U P P L Y C U R R E N T (m A )CAPACITANCE (nF)Supply Current vs. Load CapacitanceT I M E (µs )CAPACITANCE (nF)Output Rise and Fall Time vs. Load Capacitance20040060080010001200V O L T A G E D R O P (m V )OUTPUT CURRENT (mA)Output Voltage Drop vs.Output Source Current20040060080010001200V O L T A G E D R O P (m V )OUTPUT CURRENT (mA)Output Voltage Drop vs.Output Sink Current100200300400500600H Y S T E R E S I S (m V )SUPPLY VOLTAGE (V)Control Input Hysteresisvs. Supply VoltageO N R E S I S T A N C E (Ω)SUPPLY VOLTAGE (V)OutputSource Resistance200400600800H Y S T E R E S I S (m V )TEMPERATURE (°C)Control Input Hysteresisvs. TemperatureO N -R E S I S T A N C E (Ω)TEMPERATURE (°C)Output Source Resistancevs. TemperatureO N R E S I S T A N C E (Ω)SUPPLY VOLTAGE (V)OutputSink ResistanceO N -R E S I S T A N C E (Ω)TEMPERATURE (°C)Output Sink Resistancevs. Temperature0.51.01.52.02.5C U R R E N T (A )SUPPLY VOLTAGE (V)Peak Output Current vs. Supply Voltage1x1021x1031x1041x1051x1061x107S U P P L Y C U R R E N T (m A )FREQUENCY (Hz)Supply Current vs. Frequency1x1021x1031x1041x1051x1061x107S U P P L Y C U R R E N T (m A )FREQUENCY (Hz)Supply Current vs. FrequencyNote 3:Typical Characteristics at T A = 25°C, V S = 5V,C L = 1000pF unless noted.Note 4:Source-to-drain voltage drop across the internal P-channel MOSFET =V S – V G .Note 5:Drain-to-source voltage drop across the internal N-channel MOSFET = V G – V GND .(Voltage applied to G.)Note 6:1µs pulse test, 50% duty cycle. OUTconnected to GND. OUT sources current.(MIC4416, V CTL = 5V;MIC4417, V CTL = 0V)Note 7:1µs pulse test, 50% duty cycle. VS connected to OUT. OUT sinks current.(MIC4416, V CTL = 0V;MIC4417, V CTL = 5V)Functional DescriptionRefer to the functional diagram.The MI C4416 is a noninverting driver. A logic high on the CTL (control) input produces gate drive output. The MIC4417 is an inverting driver. A logic low on the CTL (control) input produces gate drive output. The G (gate) output is used to turn on an external N-channel MOSFET.SupplyVS (supply) is rated for +4.5V to +18V. External capacitors are recommended to decouple noise.ControlCTL (control) is a TTL-compatible input. CTL must be forced high or low by an external signal. A floating input will cause unpredictable operation.A high input turns on Q1, which sinks the output of the 0.3mA and the 0.6mA current source, forcing the input of the first inverter low.HysteresisThe control threshold voltage, when CTL is rising, is slightly higher than the control threshold voltage when CTL is falling.When CTL is low, Q2 is on, which applies the additional 0.6mA current source to Q1. Forcing CTL high turns on Q1which must sink 0.9mA from the two current sources. The higher current through Q1 causes a larger drain-to-source voltage drop across Q1. A slightly higher control voltage is required to pull the input of the first inverter down to its threshold.Functional DiagramFunctional Diagram with External ComponentsQ2 turns off after the first inverter output goes high. This reduces the current through Q1 to 0.3mA. The lower current reduces the drain-to-source voltage drop across Q1. A slightly lower control voltage will pull the input of the first inverter up to its threshold.DriversThe second (optional) inverter permits the driver to be manu-factured in inverting and noninverting versions.The last inverter functions as a driver for the output MOSFETs Q3 and Q4.Gate OutputG (gate) is designed to drive a capacitive load. V G (gate output voltage) is either approximately the supply voltage or approximately ground, depending on the logic state applied to CTL.If CTL is high, and VS (supply) drops to zero, the gate output will be floating (unpredictable).ESD ProtectionD1 protects VS from negative ESD voltages. D2 and D3clamp positive and negative ESD voltages applied to CTL.R1 isolates the gate of Q1 from sudden changes on the CTL input. D4 and D5 prevent Q1’s gate voltage from exceeding the supply voltage or going below ground.Application InformationThe MIC4416/7 is designed to provide high peak current for charging and discharging capacitive loads. The 1.2A peak value is a nominal value determined under specific condi-tions. This nominal value is used to compare its relative size to other low-side MOSFET drivers. The MIC4416/7 is not designed to directly switch 1.2A continuous loads.Supply BypassCapacitors from VS to GND are recommended to control switching and supply transients. Load current and supply lead length are some of the factors that affect capacitor size requirements.A 4.7µF or 10µF tantalum capacitor is suitable for many applications. Low-ESR (equivalent series resistance) metal-ized film capacitors may also be suitable. An additional 0.1µF ceramic capacitor is suggested in parallel with the larger capacitor to control high-frequency transients.The low ESR (equivalent series resistance) of tantalum capacitors makes them especially effective, but also makes them susceptible to uncontrolled inrush current from low impedance voltage sources (such as NiCd batteries or auto-matic test equipment). Avoid instantaneously applying volt-age, capable of very high peak current, directly to or near tantalum capacitors without additional current limiting. Nor-mal power supply turn-on (slow rise time) or printed circuit trace resistance is usually adequate for normal product usage.Circuit LayoutAvoid long power supply and ground traces. They exhibit inductance that can cause voltage transients (inductive kick). Even with resistive loads, inductive transients can sometimes exceed the ratings of the MOSFET and the driver.When a load is switched off, supply lead inductance forces current to continue flowing—resulting in a positive voltage spike. Inductance in the ground (return) lead to the supply has similar effects, except the voltage spike is negative. Switching transitions momentarily draw current from VS to GND. This combines with supply lead inductance to create voltage transients at turn on and turnoff.Transients can also result in slower apparent rise or fall times when driver’s ground shifts with respect to the control input. Minimize the length of supply and ground traces or use ground and power planes when possible. Bypass capacitors should be placed as close as practical to the driver. MOSFET SelectionStandard MOSFETA standard N-channel power MOSFET is fully enhanced with a gate-to-source voltage of approximately 10V and has an absolute maximum gate-to-source voltage of ±20V.The MIC4416/7’s on-state output is approximately equal to the supply voltage. The lowest usable voltage depends upon the behavior of the MOSFET.†Try a15Ω, 15Wor1k, 1/4WresistorFigure ing a Standard MOSFETLogic-Level MOSFETLogic-level N-channel power MOSFETs are fully enhanced with a gate-to-source voltage of approximately 5V and have an absolute maximum gate-to-source voltage of ±10V. They are less common and generally more expensive.The MIC4416/7 can drive a logic-level MOSFET if the supply voltage, including transients, does not exceed the maximumMOSFET gate-to-source rating (10V).†Try a3Ω, 10WorΩ, 1/4WresistorFigure ing a Logic-Level MOSFETAt low voltages, the MIC4416/7’s internal P- and N-channel MOSFET’s on-resistance will increase and slow the output rise time. Refer to “Typical Characteristics” graphs. Inductive LoadsSchottkyDiodeFigure 3.Switching an Inductive Load Switching off an inductive load in a low-side application forces the MOSFET drain higher than the supply voltage (as the inductor resists changes to current). To prevent exceeding the MOSFET’s drain-to-gate and drain-to-source ratings, a Schottky diode should be connected across the inductive load.Power DissipationThe maximum power dissipation must not be exceeded to prevent die meltdown or deterioration.Power dissipation in on/off switch applications is negligible. Fast repetitive switching applications, such as SMPS (switch-mode power supplies), cause a significant increase in power dissipation with frequency. Power is dissipated each time current passes through the internal output MOSFETs when charging or discharging the external MOSFET. Power is also dissipated during each transition when some current momen-tarily passes from VS to GND through both internal MOSFETs. Power dissipation is the product of supply voltage and supply current:1)P D = V S× I Swhere:P D = power dissipation (W)V S = supply voltage (V)I S = supply current (A) [see paragraph below] Supply current is a function of supply voltage, switching frequency, and load capacitance. Determine this value from the “Typical Characteristics: Supply Current vs. Frequency”graph or measure it in the actual application.Do not allow P D to exceed P D (max), below.T J (junction temperature) is the sum of T A (ambient tempera-ture) and the temperature rise across the thermal resistance of the package. In another form:2)P 150T220DA ≤−where:P D (max) = maximum power dissipation (W)150 = absolute maximum junction temperature (°C)T A = ambient temperature (°C) [68°F = 20°C]220 = package thermal resistance (°C/W)Maximum power dissipation at 20°C with the driver soldered to a 0.25in2 ground plane is approximately 600mW.G PCB heat sink/Figure 4.Heat-Sink PlaneThe SOT-143 package θJA (junction-to-ambient thermal re-sistance) can be improved by using a heat sink larger than the specified 0.25in2ground plane. Significant heat transfer occurs through the large (GND) lead. This lead is an extension of the paddle to which the die is attached.High-Frequency OperationAlthough the MIC4416/7 driver will operate at frequencies greater than 1MHz, the MOSFET’s capacitance and the load will affect the output waveform (at the MOSFET’s drain). For example, an MIC4416/IRL3103 test circuit using a 47Ω5W load resistor will produce an output waveform that closely matches the input signal shape up to about 500kHz. The same test circuit with a 1kΩ load resistor operates only up to about 25kHz before the MOSFET source waveform shows significant change.Figure 5.MOSFET Capacitance Effects at HighSwitching FrequencyWhen the MOSFET is driven off, the slower rise occurs because the MOSFET’s output capacitance recharges through the load resistance (RC circuit). A lower load resistance allows the output to rise faster. For the fastest driver opera-tion, choose the smallest power MOSFET that will safely handle the desired voltage, current, and safety margin. The smallest MOSFETs generally have the lowest capacitance.Package Information4-Pin SOT-143 (M4)MICREL INC.2180 FORTUNE DRIVE SAN JOSE, CA95131USATEL + 1 (408) 944-0800 FAX + 1 (408) 474-1000 WEB This information furnished by Micrel in this data sheet is believed to be accurate and reliable. However no responsibility is assumed by Micrel for its use.Micrel reserves the right to change circuitry and specifications at any time without notification to the customer.Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant into the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A Purchaser’s use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser’s own risk and Purchaser agrees to fully indemnifyMicrel for any damages resulting from such use or sale.© 2001 Micrel Incorporated分销商库存信息:MICRELMIC4416YM4 TR MIC4417YM4 TR MIC4416BM4 TR MIC4417BM4 TR。

LF441CN中文资料

2
元器件交易网
LF441C LF442C LF444C
AC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = –15 V, TA = +25°C, unless otherwise noted.)
Output 4 Inputs 4 VEE Inputs 3 Output 3
+ + 2 3 1 4
+ + -
13 12 11 10 9 8
(Quad, Top View)
© Semiconductor Components Industries, LLC, 2002
1
March, 2002 – Rev. 1
Publication Order Number: LF441C/D
元器件交易网
LF441C LF442C LF444C
MAXIMUM RATINGS
Rating Supply Voltage (from VCC to VEE) Input Differential Voltage Range (Note 1) Input Voltage Range (Notes 1 and 2) Output Short Circuit Duration (Note 3) Operating Junction Temperature (Note 3) Storage Temperature Range Symbol VS VIDR VIR tSC TJ Tstg Value +36 ±30 ±15 Indefinite +150 –60 to +150 Unit V V V sec °C °C
Figure 3. Input Bias Current versus Temperature

MICRE MIC4416 4417 说明书

Typical ApplicationLow-Side Power SwitchMicrel, Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 474-1000 • Pin ConfigurationSOT-143 (M4)Part Number Marking Code*TemperatureStandard Pb-Free Standard Pb-Free Range Configuration Package MIC4416BM4MIC4416YM4D10D10–40ºC to +85ºC Non-Inverting SOT-143 MIC4417BM4MIC4417YM4D11D11–40ºC to +85ºC Inverting SOT-143 *Under bar symbol (_) may not be to scale.Pin DescriptionPin Number Pin Name Pin Function1GND Ground: Power return.2G Gate (Output) : Gate connection to external MOSFET.3VS Supply (Input): +4.5V to +18V supply.4CTL Control (Input): TTL-compatible on/off control input.MIC4416 only: Logic high forces the gate output to the supply voltage.Logic low forces the gate output to ground.MIC4417 only: Logic high forces the gate output to ground. Logic lowforces the gate output to the supply voltage.Electrical Characteristics (Note 3)Parameter Condition (Note 1)MinTyp Max Units Supply Current 4.5V ≤ V S ≤ 18V V CTL = 0V 50200µA V CTL = 5V3701500µA Control Input Voltage 4.5V ≤ V S ≤ 18V V CTL for logic 0 input 0.8V V CTL for logic 1 input2.4V Control Input Current 0V ≤ V CTL ≤ V S –1010µA Delay Time, V CTL Rising V S = 5V C L = 1000pF, Note 242ns V S = 18V C L = 1000pF, Note 23360ns Delay Time, V CTL Falling V S = 5V C L = 1000pF, Note 242ns V S = 18V C L = 1000pF, Note 22340ns Output Rise TimeV S = 5V C L = 1000pF, Note 224ns V S = 18VC L = 1000pF, Note 21440ns Output Fall TimeV S = 5V C L = 1000pF, Note 228ns V S = 18VC L = 1000pF, Note 21640ns Gate Output Offset Voltage 4.5V ≤ V S ≤ 18V V G = high –25mV V G = low25mV Output ResistanceV S = 5V, I OUT = 10mAP-channel (source) MOSFET 7.6ΩN-channel (sink) MOSFET 7.8ΩV S = 18V, I OUT = 10mAP-channel (source) MOSFET 3.510ΩN-channel (sink) MOSFET3.510ΩGate Output Reverse CurrentNo latch up250mAGeneral Note: Devices are ESD protected, however handling precautions are recommended.Note 1:Typical values at T A = 25°C. Minimum and maximum values indicate performance at –40°C ≥ T A ≥ +85°C. Parts production tested at 25°C.Note 2:Refer to “MIC4416 Timing Definitions” and “MIC4417 Timing Definitions” diagrams (see next page).Note 3:Specification for packaged product only.Absolute Maximum RatingsSupply Voltage (V S )....................................................+20V Control Voltage (V CTL )..................................–20V to +20V Gate Voltage (V G ).......................................................+20V Junction Temperature (T J )........................................150°C Lead Temperature, Soldering ...................260°C for 5 sec.Operating RatingsSupply Voltage (V S ).......................................+4.5 to +18V Control Voltage (V CTL )..........................................0V to V S Ambient Temperature Range (T A ).............–40°C to +85°C Thermal Resistance (θJA )......................................220°C/W (soldered to 0.25in 2 copper ground plane)DefinitionsMIC4416/MIC4417 Operating States90%10%10%0V 5V V S OUTPUTINPUT90%0VMIC4416 (Noninverting) Timing Definitions90%10%10%0V 5VV S OUTPUTINPUT90%0VMIC4417 (Inverting) Timing DefinitionsTest CircuitV OUTT I M E (n s )SUPPLY VOLTAGE (V)Rise and Fall Time vs. Supply VoltageT I M E (n s )TEMPERATURE (°C)Rise and Fall Time vs. TemperatureT I M E (n s )TEMPERATURE (°C)Rise and Fall Time vs. TemperatureTypical Characteristics Note 3020040060080010001200020406080100V O L T A G E D R O P (m V )OUTPUT CURRENT (mA)Output Voltage Drop vs.Output Source CurrentV SUPPLY = 5V18VNOTE 45V18VFunctional DescriptionRefer to the functional diagram.The MI C4416 is a noninverting driver. A logic high on the CTL (control) input produces gate drive output. The MIC4417 is an inverting driver. A logic low on the CTL (control) input produces gate drive output. The G (gate) output is used to turn on an external N-channel MOSFET.SupplyVS (supply) is rated for +4.5V to +18V. External capacitors are recommended to decouple noise.ControlCTL (control) is a TTL-compatible input. CTL must be forced high or low by an external signal. A floating input will cause unpredictable operation.A high input turns on Q1, which sinks the output of the 0.3mA and the 0.6mA current source, forcing the input of the first inverter low.HysteresisThe control threshold voltage, when CTL is rising, is slightly higher than the control threshold voltage when CTL is falling.When CTL is low, Q2 is on, which applies the additional 0.6mA current source to Q1. Forcing CTL high turns on Q1which must sink 0.9mA from the two current sources. The higher current through Q1 causes a larger drain-to-source voltage drop across Q1. A slightly higher control voltage is required to pull the input of the first inverter down to its threshold.Functional DiagramFunctional Diagram with External ComponentsQ2 turns off after the first inverter output goes high. This reduces the current through Q1 to 0.3mA. The lower current reduces the drain-to-source voltage drop across Q1. A slightly lower control voltage will pull the input of the first inverter up to its threshold.DriversThe second (optional) inverter permits the driver to be manu-factured in inverting and noninverting versions.The last inverter functions as a driver for the output MOSFETs Q3 and Q4.Gate OutputG (gate) is designed to drive a capacitive load. V G (gate output voltage) is either approximately the supply voltage or approximately ground, depending on the logic state applied to CTL.If CTL is high, and VS (supply) drops to zero, the gate output will be floating (unpredictable).ESD ProtectionD1 protects VS from negative ESD voltages. D2 and D3clamp positive and negative ESD voltages applied to CTL.R1 isolates the gate of Q1 from sudden changes on the CTL input. D4 and D5 prevent Q1’s gate voltage from exceeding the supply voltage or going below ground.Application InformationThe MIC4416/7 is designed to provide high peak current for charging and discharging capacitive loads. The 1.2A peak value is a nominal value determined under specific condi-tions. This nominal value is used to compare its relative size to other low-side MOSFET drivers. The MIC4416/7 is not designed to directly switch 1.2A continuous loads.Supply BypassCapacitors from VS to GND are recommended to control switching and supply transients. Load current and supply lead length are some of the factors that affect capacitor size requirements.A 4.7µF or 10µF tantalum capacitor is suitable for many applications. Low-ESR (equivalent series resistance) metal-ized film capacitors may also be suitable. An additional 0.1µF ceramic capacitor is suggested in parallel with the larger capacitor to control high-frequency transients.The low ESR (equivalent series resistance) of tantalum capacitors makes them especially effective, but also makes them susceptible to uncontrolled inrush current from low impedance voltage sources (such as NiCd batteries or auto-matic test equipment). Avoid instantaneously applying volt-age, capable of very high peak current, directly to or near tantalum capacitors without additional current limiting. Nor-mal power supply turn-on (slow rise time) or printed circuit trace resistance is usually adequate for normal product usage.Circuit LayoutAvoid long power supply and ground traces. They exhibit inductance that can cause voltage transients (inductive kick). Even with resistive loads, inductive transients can sometimes exceed the ratings of the MOSFET and the driver.When a load is switched off, supply lead inductance forces current to continue flowing—resulting in a positive voltage spike. Inductance in the ground (return) lead to the supply has similar effects, except the voltage spike is negative. Switching transitions momentarily draw current from VS to GND. This combines with supply lead inductance to create voltage transients at turn on and turnoff.Transients can also result in slower apparent rise or fall times when driver’s ground shifts with respect to the control input. Minimize the length of supply and ground traces or use ground and power planes when possible. Bypass capacitors should be placed as close as practical to the driver. MOSFET SelectionStandard MOSFETA standard N-channel power MOSFET is fully enhanced with a gate-to-source voltage of approximately 10V and has an absolute maximum gate-to-source voltage of ±20V.The MIC4416/7’s on-state output is approximately equal to the supply voltage. The lowest usable voltage depends upon the behavior of the MOSFET.†Try a15Ω, 15Wor1k, 1/4WresistorFigure ing a Standard MOSFETLogic-Level MOSFETLogic-level N-channel power MOSFETs are fully enhanced with a gate-to-source voltage of approximately 5V and have an absolute maximum gate-to-source voltage of ±10V. They are less common and generally more expensive.The MIC4416/7 can drive a logic-level MOSFET if the supply voltage, including transients, does not exceed the maximumMOSFET gate-to-source rating (10V).†Try a3Ω, 10WorΩ, 1/4WresistorFigure ing a Logic-Level MOSFETAt low voltages, the MIC4416/7’s internal P- and N-channel MOSFET’s on-resistance will increase and slow the output rise time. Refer to “Typical Characteristics” graphs. Inductive LoadsSchottkyDiodeFigure 3.Switching an Inductive Load Switching off an inductive load in a low-side application forces the MOSFET drain higher than the supply voltage (as the inductor resists changes to current). To prevent exceeding the MOSFET’s drain-to-gate and drain-to-source ratings, a Schottky diode should be connected across the inductive load.Power DissipationThe maximum power dissipation must not be exceeded to prevent die meltdown or deterioration.Power dissipation in on/off switch applications is negligible. Fast repetitive switching applications, such as SMPS (switch-mode power supplies), cause a significant increase in power dissipation with frequency. Power is dissipated each time current passes through the internal output MOSFETs when charging or discharging the external MOSFET. Power is also dissipated during each transition when some current momen-tarily passes from VS to GND through both internal MOSFETs. Power dissipation is the product of supply voltage and supply current:1)P D = V S× I Swhere:P D = power dissipation (W)V S = supply voltage (V)I S = supply current (A) [see paragraph below] Supply current is a function of supply voltage, switching frequency, and load capacitance. Determine this value from the “Typical Characteristics: Supply Current vs. Frequency”graph or measure it in the actual application.Do not allow P D to exceed P D (max), below.T J (junction temperature) is the sum of T A (ambient tempera-ture) and the temperature rise across the thermal resistance of the package. In another form:2)P 150T220DA ≤−where:P D (max) = maximum power dissipation (W)150 = absolute maximum junction temperature (°C)T A = ambient temperature (°C) [68°F = 20°C]220 = package thermal resistance (°C/W)Maximum power dissipation at 20°C with the driver soldered to a 0.25in2 ground plane is approximately 600mW.G PCB heat sink/Figure 4.Heat-Sink PlaneThe SOT-143 package θJA (junction-to-ambient thermal re-sistance) can be improved by using a heat sink larger than the specified 0.25in2ground plane. Significant heat transfer occurs through the large (GND) lead. This lead is an extension of the paddle to which the die is attached.High-Frequency OperationAlthough the MIC4416/7 driver will operate at frequencies greater than 1MHz, the MOSFET’s capacitance and the load will affect the output waveform (at the MOSFET’s drain). For example, an MIC4416/IRL3103 test circuit using a 47Ω5W load resistor will produce an output waveform that closely matches the input signal shape up to about 500kHz. The same test circuit with a 1kΩ load resistor operates only up to about 25kHz before the MOSFET source waveform shows significant change.Figure 5.MOSFET Capacitance Effects at HighSwitching FrequencyWhen the MOSFET is driven off, the slower rise occurs because the MOSFET’s output capacitance recharges through the load resistance (RC circuit). A lower load resistance allows the output to rise faster. For the fastest driver opera-tion, choose the smallest power MOSFET that will safely handle the desired voltage, current, and safety margin. The smallest MOSFETs generally have the lowest capacitance.Package Information4-Pin SOT-143 (M4)MICREL INC.2180 FORTUNE DRIVE SAN JOSE, CA95131USATEL + 1 (408) 944-0800 FAX + 1 (408) 474-1000 WEB This information furnished by Micrel in this data sheet is believed to be accurate and reliable. However no responsibility is assumed by Micrel for its use.Micrel reserves the right to change circuitry and specifications at any time without notification to the customer.Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant into the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A Purchaser’s use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser’s own risk and Purchaser agrees to fully indemnifyMicrel for any damages resulting from such use or sale.© 2001 Micrel Incorporated。

2021年1月生效的电路保护器技术数据4416（取代2019年12月版）说明书

Product features• Radial leaded, time delay with high breaking capacity• Designed to IEC60127-3• Plastic cap and base, flammability UL 94V0• Protects against harmful overcurrents in primary and secondary applications• Small rectangular-leaded design utilizes less board space• High frequency vibration: MIL-STD-202F, Method 201A ApplicationsPrimary and secondary circuit protection:• Power supplies• Notebooks and laptops• Appliances and white goods• Lighting ballasts• Power adapters• Set top boxes• LED/LCD televisions and displays• Air conditioners• Battery chargersAgency information• UL Recognition: File E19180, Guide JDYX2/ JDYX8• VDE: 40031800• TUV: J50190080• CCC: self-declaration 2020970207000250• PSE: JET 1641-31007-1006 (1 A - 5 A); JET 1641- 31007-1007 (6.3 A)• KC: SU05011-11001 (1 A ~ 2.5 A); SU05011-11002 (3.15 A ~ 6.3 A)Ordering• The ordering code is the part number replacing the “.” with a “-” plus adding the packaging suffix (i.e. SS-5H-1.25A; SS-5H-1-25A-BK)Packaging suffixes250 V Version• -AP (1000 parts Ammo pack, Pitch =12.7 mm)• -BK (200 parts in a polybag, Lead L=4.3 ±0.3 mm)• -BK2 (200 parts in a polybag, Lead L=21 ±3.0 mm)300 V Version• -APH (1000 parts Ammo pack, Pitch =12.7 mm)• -BKH (200 parts in a polybag, Lead L=4.3 ±0.3 mm)• -BK2H (200 parts in a polybag, Lead L=21 ±3.0 mmSS-5H250/300 V Subminiature, radial leaded, time-delay fuses Pb HALOGENHFFREE2Technical Data 4416Effective January 2021SS-5H250/300 V Subminiature, radial leaded, time-delay fuses/electronicsElectrical characteristicsl n1.5l n min minute2.1l n max minute2.75l n min ms2.75l n max s4l n min ms4l n max s10l n min ms10l n max ms1A - 6.3A 60240010150320150Product specificationsPart numberCurrent rating (A)Voltage rating 1 (Vac)Interrupting rating at rated voltage (50Hz) AC (A)Typical DC cold resistance 2 (mΩ)Typical melting 3 I 2t (A2s)Typicalvoltage drop 4 (mV)VDE 1TUV 1CURUs 1CCC 1KC 1PSE+JET 1SS-5H-1A 1.0250/300100787.494.5X X X X X X SS-5H-1.25A 1.25250/3001005712.887X X X X X X SS-5H-1.6A 1.6250/300100432379X X X X X X SS-5H-2A 2.0250/30010031.229.875X X X X X X SS-5H-2.5A 2.5250/30010023.040.373.5X X X X X X SS-5H-3.15A 3.15250/30010017.56762.5X X X X X X SS-5H-4A 4.0250/300100128760.5X X X X X X SS-5H-5A 5.0250/3001007.3512043X X X X X X SS-5H-6.3A6.3250/3001007.417659XXXXXX1. CCC and KC-Mark voltage rating only 250 Vac. VDE, TUV, cURus and PSE voltage ratings given at both 250 Vac and 300 Vac2. Typical cold resistance (measured at <10% of rated current)3. I 2T value is measured at 10I n DC4. Typical voltage drop (voltage drop was measured at +20 °C ambient temperature at rated current)Dimensions and packaging (mm)3Technical Data 4416Effective January 2021SS-5H250/300 V Subminiature, radial leaded, time-delay fuses /electronics Time vs. current curveT i m e i n s e c o n d s (s )Current in amps (A)0.010.11.01010010001010010000.11.04Technical Data 4416Effective January 2021SS-5H250/300 V Subminiature, radial leaded, time-delay fuses/electronicsGeneral specificationsOperating temperature -40 °C to +125 °C w ith proper correction factor applied Storage temperature -10 °C to +40 °C Solderability-EIA-186-9E Method 9High Frequency Vibration Test-Withstands 10-55Hz per MIL-STD-202F, Method 201A Endurance Test-IEC60127-3/4T emperature derating curveNormal operating temperature: +25 °C±2 °CF a c t o r o f r a t e d c u r r e n t (%)Ambient temperature (°C)12011010090807060-60-40-2020406080100120140EatonElectronics Division 1000 Eaton Boulevard Cleveland, OH 44122United States/electronics© 2021 EatonAll Rights Reserved Printed in USAPublication No. 4416 PCN19017M January 2021Technical Data 4416Effective January 2021SS-5H250/300 V Subminiature, radial leaded, time-delay fuses Life Support Policy: Eaton does not authorize the use of any of its products for use in life support devices or systems without the express writtenapproval of an officer of the Company. Life support systems are devices which support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.Eaton reserves the right, without notice, to change design or construction of any products and to discontinue or limit distribution of any products. Eaton also reserves the right to change or update, without notice, any technical information contained in this bulletin.T e m p e r a t u r eTimeT T T T Wave solder profileReference EN 61760-1:2006Profile featureStandard SnPb solderLead (Pb) free solderPreheat • Temperature min. (T smin )100 °C 100 °C • Temperature typ. (T styp )120 °C 120 °C • Temperature max. (T smax )130 °C 130 °C • Time (T smin to T smax ) (t s )70 seconds 70 seconds D preheat to max Temperature150 °C max.150 °C max.Peak temperature (T P )*235 °C – 260 °C 250 °C – 260 °C Time at peak temperature (t p )10 seconds max5 seconds max each wave 10 seconds max5 seconds max each wave Ramp-down rate~ 2 K/s min ~3.5 K/s typ ~5 K/s max ~ 2 K/s min ~3.5 K/s typ~5 K/s max Time 25 °C to 25 °C4 minutes4 minutesManual solder+350 °C (4-5 seconds by soldering iron), generally manual/hand soldering is not recommendedEaton is a registered trademark.All other trademarks are property of their respective owners.Follow us on social media to get the latest product and support information.。

IM4416C

Instruction Manual4416C ISOTRON® Signal ConditionerREV: ASAFETY CONSIDERATIONSThis equipment has been designed and tested in accordance with the following standards:EN61326-1:2013 Electrical equipment for measurement, control and laboratory use – Group1, Class B (Emissions)EN61326-1:2013 Electrical equipment for measurement, control and laboratory use – Industrial Environment (Immunity)CFR 47, Class A Code of Federal Regulations: Pt 15, Subpart BThis equipment is not designed to be used in potentially explosive environments. It should not be used in the presence of flammable liquids or gases.This manual contains information and warnings that must be followed to ensure safety of personnel and the safe operation of the equipment.Warnings:Switch off all power to equipment before making or breaking a connection. Failure to do so may cause damage to the equipment.Any adjustment, maintenance or repair, other than detailed within this manual, must be carried out by trained service personnel.If it is suspected that the correct operation of the equipment is threatened, impaired or otherwise, it must be made safe and free from further operation until the threat has been removed.RoHAS Compliant 2011/65/EUWaste Electronic and Electronic Equipment Directive: 2012/19/EUThis product complies with the WEEE Directive (2012/19/EU) marking requirement. The affixed product label (below) indicates that you must not dispose this electrical/electronic product in domestic household waste.To return unwanted product for disposal, please contact your local MSS Representative.Table of Contents1.BASIC INFORMATION 52.DETAILED DESCRIPTION 5 2.1 Input 5 2.1.1 Connection 5 2.1.2 Status 5 2.2 Output 6 2.2.1 Connection 6 2.2.2 Gain 6 2.2.3 Filter 6 2.3 Power 6 2.3.1 Turn On 7 2.3.2 Low Battery Indicator 72.3.3 Battery Charge Indicator 73.OPERATION 7 3.1 Transducer Connection 7 3.3 Gain Setting 8 3.4 Filter Selection 83.5 Battery Charging 84.MAINTENANCE, CALIBRATION AND REPAIR 9 4.1.1 Equipment Required: 9 4.1.2 Instructions 9 4.2 Repair 10 4.3 Battery Replacement 10 4.3.1Procedure 105.OPTIONS AND ACCESSORIES 13 5.1 Included Accessories 135.2 Options 13PLIANCE 131.Basic InformationThe Model 4416C ISOTRON® Signal Conditioner is a portable/desk top low-noise signal Conditioner for use with integral electronics piezoelectric (IEPE) transducers or piezoelectric (PE) transducers when used with a remote charge converter (RCC). The unit provides the two wire constant current supply to the transducer/remote charge converter and signal amplification/filtering. Signal amplification (gain) is selectable as x1, x10 or x100 and the fixed frequency cut-off filter is selectable as IN or OUT. The unit is powered from an internal Lithium Ion (Li-ion) battery that can be recharged using the supplied charger. Led indicators are used to show the status of the battery, gain range selected, filter in, input status and battery charge.Photo 1. Front Panel2.Detailed Description2.1 Input2.1.1 ConnectionThe 4416C supports transducers with integral electronics, i.e. ISOTRON®and IEPE and also Piezoelectric (PE) types with the use of a remote chargeconverter (RCC). Input connector is a standard BNC located on the frontpanel with one side connected to signal ground. Power to thetransducer/RCC is available at the input socket in the form of a constantcurrent of 4.7mA with a compliance voltage of 24V dc.2.1.2 StatusAn indicator on the front panel shows the status of the input – if a transduceris connected and functioning correctly the indicator will be “green”. If a faultcondition exists, the indicator will be “Red”. A fault condition exists wheneither the input is open circuit, i.e. no transducer connected, or if the inputis short circuit, i.e. a cable fault. During turn on, both green and redconditions are cycled before the steady state is reached.2.2 Output2.2.1 ConnectionThe output connector is a standard BNC located on the front panel withone side connected to signal ground. The case of the unit is also connectedto signal ground. If a connection to earth is required it should be madethrough via the output connector to associated instrumentation.2.2.2 GainThree levels of amplification (gain) are provided and selectable on the frontpanel. The selected gain level is shown by the associated indicator.2.2.3 FilterA low pass filter is provided in the form of a second order Sallen Key. Withthe filter indicator on, the filter is selected IN.2.3 PowerPower for the Conditioner comes from an internal Li-ion cell pack, and asupplied external universal power adapter. The power adapter functions asa charger for the internal battery, but also will power the Conditioner, whilethe battery is being charged. Battery charge and discharge are managedby internal circuitry to provide a safe and effective environment for thebattery to operate. It is recommended that the charger be disconnectedonce charging has stopped to maximize battery life.Photo 2. Rear PanelWarning!Only use the power adapter supplied with the 4416C for charging otherwise internal damage may occur!2.3.1 Turn OnThe conditioner is turned on and off by a switch on the rear panel. To turnon, press the “1” and to turn off, press “0”. When turned on the Conditionerwill cycle through the front panel indicators lighting the gain indicators inturn and lighting the filter indicator.2.3.2 Low Battery IndicatorThe battery Low indicator is on the front panel and will be “Red” when thebattery reaches a pre-determined level. At this point it is recommended thatthe charger be connected. If the charger is not connected at this point theunit will continue to function until a second predetermined battery level isreached. At this point all power is turned off and no further operation ispossible. The battery must be recharged before reuse, or connected tothe charger and used while charging.2.3.3 Battery Charge IndicatorThe battery charge indicator is mounted above the charger socket on therear panel. While charging is in progress the indicator will be “green”. Whencharging is complete the indicator is extinguished.3.OperationFor optimum performance, it is recommended that the unit be fully chargedbefore using it the first time. Note: Ensure the Conditioner is turned offbefore making any connecting to the 4416C. Once connections have beenmade, the unit can be turned on with the switch located on the rear panel.The unit will then cycle the front panel gain and filter indicators to verify allare working.3.1 Transducer ConnectionThe transducer/RCC is connected to the Input socket. A constant currentsupply powers the transducer /RCC. When powered on, thetransducer/RCC will set a bias voltage at the input of the 4416C ofapproximately 12Vdc (dependent on the transducer). The 4416C monitorsthe dc bias to be within a pre-set range of 8V to 16 VDC. If the bias is withinthe range the status indicator is turned Green and the system is ready touse. If the bias is out of range, the status indicator is turned Red – an alertcondition exists. (This does not mean a sensor is bad, just verify the biasvoltage is acceptable.) Note: Some transducers can take 1 – 2 minutesbefore the bias settles into range, and some Low Frequency RCC’s cantake as long as 5 minutes to reach their operating point.3.2 Output Con nectionMeasuring Instrumentation, i.e. data acquisition, data logger etc., shouldbe connected to the output socket using coaxial cables. Load impedanceshould be no lower than 100kΩ to meet all specifications. Ideally, the4416C should be placed near the measuring instrumentation to minimizethe effect of cable capacitance loading.3.3 Gain SettingDepressing the “Gain” switch cycles through the gain ranges of x1, x10 andx100. The gain range selected is shown by the indicator above the rangeturning Green. The gain together with the transducer sensitivity determinesthe acceleration range available from the system and the output sensitivity,i.e. for an accelerometer with a sensitivity of 10mV/g pk, and the maximumoutput of the 4416C being 10V pk:Gain = 1 Range = 1000g Output sensitivity = 10mV/gGain = 10 Range = 100g Output sensitivity = 100mV/gGain = 100 Range = 10g Output sensitivity = 1000mV/g3.4 Filter SelectionA second order low pass filter is selected by depressing the filter switch.This toggles the filter in and out. With the indicator Green, the filter isselected IN. The Standard filter provides attenuation of -5% atapproximately 10kHz, and -3dB at 30 kHz for gains of 1 and 10, or 18kHzfor gain of 100. The filter maybe used to reduce the effects of HF noiseand aliasing in data acquisition systems.3.5 Battery ChargingEnsure that both the Charger and Conditioner are turned OFF beforeconnecting. Plug the Charger connector into the socket on the rear panelof the Conditioner. Turn on the charger. Charging is accomplished in twostages:Stage 1 – Fast Charge Mode“Fast Charge Mode”, covers both constant current and constant voltagemodes and charges the battery to approximately 85% of its capacity inapproximately 3 hours. Once 85% capacity has been achieved, thecharging will automatically switch into “Stage 2”.Stage 2 – Trickle Charge Mode“Trickle Charge Mode” will deliver sufficient charge to top up the battery to100% of its capacity in approximately 45 minutes.Once 100% capacity has been achieved the charge indicator willextinguish. In the event of a fault with the battery charging circuit, or thebattery pack itself, the charge indicator will be “Red”. In this event, pleasecontact your local representative to arrange for the repair of theConditioner. Note: For any repair, return the charger with the unit to insureall components are performing properly – the charger could be the problemsource.The charging times are approximate and will vary depending on initialbattery charge state and temperature. If the Conditioner is turned on whilebeing charged, the power from the charger will be shared betweenoperation and charging with the priority given to its operation.To conserve battery life, it is recommended that once the battery is fullycharged, the charger is disconnected.4.Maintenance, Calibration and RepairIf the unit is suspected of not working or malfunctioning it can be checkedby use of the following circuit. This circuit should also be used whenperforming a calibration of the unit.1.1 Check Out Procedure4.1.1 Equipment Required:Signal Generator, static free mat, DMM and Oscilloscope4.1.2 Instructions•Ensure the battery is fully charged.•Connect the circuit above to the input of the 4416C.•Set the signal generator for 70mV rms at a frequency of 100Hz.•Turn on the 4416C and select a gain of 1. Allow 5 minutes to stabilize.•Measure with the DMM across the 2.5kΩ resistor for a voltage of approximately 12V dc.•Verify on the oscilloscope that an undistorted sine wave of approximately 100mV pk is displayed.•Select a gain of 10. Verify the signal on the oscilloscope is undistorted and approximately 1V pk in amplitude.•Select a gain of 100. Verify the signal on the oscilloscope is undistorted and approximately 10V pk in amplitude.•To verify the output noise, replace the signal generator with a short circuit.•If any of the above conditions are not met, the unit should be considered faulty and requires repair.4.2 RepairIn the event that the Conditioner requires repair please contact your localSales Representative or distributor who will advise on the returnsprocedure. Note: Return the charger with the Conditioner whenever repairis required. The charger could be the source of the problem.4.3 Battery ReplacementBattery life is > 300 cycles, which under typical operating conditions shouldexceed 3 years. Should the battery need to be replaced please contactyour local Sales Representative or distributor who will advise on the returnsprocedure.The internal battery of the Model 4416C is located centrally within the case.Replacement of the battery requires minimal skill but the greatest of care.The following describes how to replace the internal battery.Parts Required: Replacement Battery – Part Number EHM2107Tools Required:Torx T10 Driver, Small sharp implement4.3.1 Procedurea. Using the small sharp implement, gently pry out and remove the plasticscrew covers located on the front panel, shown removed on the left sideand at the red circle on the right side of the front panel in Photo 3 below.Do not discard the plastic covers.b. Remove the two screws securing the front panel using the T10 TORXdriver. Gently pull the front panel away from the body – there are shortconnecting wires behind the panel. Note: The gasket remains with thepanel.c. In a similar manner, remove the two screws securing the rear panel usingthe T10 TORX driver. Gently pull the front panel away from the body – thereare short connecting wires behind the panel, shown in Photo 4. Do notdiscard the covers. (The wire connections can be disconnected ifpreferred, but less stress on the cables is better.)d. Gently rotate the rear panel at an angle, allowing it to be flat, to easily passthrough the case by pushing from the rear, extracting the entire assemblyfrom the front. The entire assembly and battery will slide out with the circuitboard. A gasket goes with each panel. Place the entire circuit board assembly on a static free surface, to prevent potential static damage to components. See Photo 5.e. Unplug the battery from the socket on the circuit board. See photo 5.f. Locate the new battery and connect it to the socket on the circuit board.g. Gently ease the rear panel and one gasket first, into the case, followed bythe circuit board and battery into the case, compressing the battery foam.Note: The circuit board is located in the lower channel in the case, just below the two mounting screw holes. See Photo 6.h. Replace and secure the rear panel.i. Replace and secure the front panel.j. Replace all plastic screw covers.k. Place the unit on charge.l. Dispose of the original battery responsibly or return it to MSS for disposal.Photo 3Photo 4Photo 5Photo 65.Options and Accessories5.1 Included AccessoriesQSG4416C Quick Start Guide includedIM4416C Instruction Manual (Download from website)EHM2107 Universal power supply, with adaptors for USA, UK,EURO, Japan and Australia5.2 OptionsEJ21 10-32 to BNC adapterEHM2106 Replacement BatteryEHM2107 Replacement Universal power adapterpliance6.1 ROHS to 2011/65/EU;6.2 CE to EN61326-1:2013; CFR47 Pt 15 B Class A.。

EMS测试

电磁兼容（EMC ）是对电子产品在电磁场方面干扰大小（EMI）和抗干扰能力（EMS ）的综合评定，是产品质量最重要的指标之一，电磁兼容的测量由测试场地和测试仪器组成。

EMC 包含两大项：EMI （干扰）和 EMS(敏感度，抗干扰）EMI 测试项包括：RE （辐射，发射） CE(传导干扰） Harmonic （谐波） Flicker (闪烁)EMS 测试项包括：ESD （静电） EFT （瞬态脉冲干扰） DIP(电压跌落） CS （传导抗干扰）RS （辐射抗干扰）Surge （浪涌，雷击） PMS(工频磁场搞扰度）一、EMI （电磁骚扰）分射频和工频两类测试l 射频类测试项目：1.1 射频分传导和辐射两项测试射频传导（屏蔽室测试）1.1.1 传导分电压和功率两项测试 1.1.2 传导电压标准：CISPR11、14、15、221.1.3 传导功率标准：CISPR11、14 射频辐射（电波暗室测试）1.1.4 射频辐射标准：CISPR11、22、IEC60571l 工频类测试项目（实验室测试） 1.2 工频分谐波和闪烁两项测试工频谐波1.2.1 IEC6100-3-2 工频闪烁1.2.2 IEC6100-3-3二、EMS （电磁敏感度）分瞬变、射频、低频磁场、电源质量l 瞬变类测试项目（实验室测试） 2.1 瞬变分静电、瞬变脉冲和浪涌三项测试瞬变静电IEC6100-4-2 瞬变脉冲IEC6100-4-4 瞬变浪涌IEC6100-4-5 l 射频类项目2.2 射频分传导和辐射两项测试射频传导IEC61004-6（实验室测试）射频辐射IEC6100-4-3（电波暗室测试） l 低频磁场类测试项目（实验室测试） 2.3 低频磁场分脉冲磁场和工频磁场两项测试脉冲磁场IEC6100-4-9 工频磁场IEC6100-4-8电源质量类测试项目（实验室测试） 2.4分跌落、中断、电压变化三项测试 IEC6100-4-11注：1. 传导功率测试面积 > 7x1M 2. 传导电压测试桌：推荐 2x1.5x0.8 要考虑柜式设备的测试面积。