BTB12-600TW3G;中文规格书,Datasheet资料

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LWK-06-W250B-350;中文规格书,Datasheet资料

LWK-06-W250B-350;中文规格书,Datasheet资料

Special Use Sensors - Weldable Strain GagesStandard Weldable PatternsMicro-Measurements For technical questions, contact: micro-measurements@Document Number: 11519Micro-Measurements Standard Weldable Strain Gages and Temperature Sensors are specially designed for spot welding to structures and components. They are ideal for applications where test or environmental conditions preclude clamping and curing an adhesively bonded gage installation.These gages are equally advantageous when strain measurements must be made at an elevated temperature,but the nature of the test object does not permit the use of an elevated-temperature-curing adhesive.Surface preparation requirements are minimal; only an appropriate solvent cleaning and abrasion of the test part surface with silicon-carbide paper or a small, hand-held grinder is needed. Spot welding is accomplished with a portable stored-energy hand-probe spot welder, such as the Model 700. Environmental protection is as easily applied to a welded gage installation as to an adhesively bonded gage.Refer to Instruction Bulletin B-131 and Catalog A-110 for further information on installation and protective coatings,and to Bulletin 302 for specifications on the Model 700Welding/Soldering Unit.DESCRIPTION AND PERFORMANCEGeneral — All sensors are laboratory-prebonded, with a high-performance adhesive, to thin (0.005 in [0.13 mm])metal carriers. Sensor grids are fully encapsulated for protection against handling and installation damage.Standard weldable strain gages are offered in two series to meet differing performance requirements. Both series are available in either 06 or 09 self-temperature compensation.Strain gages with 06 S-T-C have Inconel carriers, while S-T-C 09 gages and temperature sensors are mounted on 300-series stainless steel.CEA-Series Welda le Strain Gage —Polyimide-encapsulated constantan foil grid, with large, rugged,copper-coated tabs. In most cases, the carrier can be contoured to a radius as small as 1/2in [13mm]. The CEASeries is ideal for direct leadwire attachment, before or after installation.Strain range is ±5000µin/in [±5000µm/m], and normal operating temperature range is –100° to +200°F [–75° to +95°C]. Short-term maximum temperature is +300°F [+150°C].LWK-Series Weldab le Strain Gage — Nickel-chromium alloy grid, encapsulated in fiberglass-reinforced epoxy phenolic. The LWK gage is provided with a three-wire lead system with 10 in [250 mm] of Teflon ®-insulated leadwire.This construction simplifies leadwire temperature compensation and provides for easy connection of the lead system to the instrumentation cable. Minimum installation radius is generally limited to 2in [50 mm].Strain range is ±5000µin/in [±5000µm/m], and normal operating temperature range is –320° to +500°F [–195° to +260°C]. Short-term maximum temperature is +550°F [+290°C].WWT-Series Temperature Sensor — High-purity nickel foil grid encapsulated in fiberglass-reinforced epoxy-phenolic,and equipped with integral three-tab terminal to facilitate leadwire attachment. The temperature sensor is normally installed on a flat surface of the workpiece, but, in any case,should always be oriented with the gridlines in the direction of minimum strain to avoid strain-induced errors (see Micro-Measurements Tech Note TN-506, Bondable Resistance Temperature Sensors and Associated Circuitry).With an appropriate LST Matching Network, the temperature response characteristic of the nickel can be linearized and scaled for direct readout (in degrees) with any strain indicator.Teflon is a Registered Trademark of DuPont.MEASUREMENT CONSIDERATIONSIt is important to note that operating characteristics of weldable strain gages (gage factor, transverse sensitivity,and thermal output) are specified for the basic strain gage itself — without the metal carrier. Thus, the properties are measured by bonding a conventional strain gage directly to an appropriate calibration specimen, following standard methods specified for all Micro-Measurements strain gages. This procedure assures the most accurate results,independent of the variables introduced by welding. In particular, the user should be aware that the gage factor specified on the engineering data sheet accompanying the gage applies only to the basic strain gage, without the shim. The effective gage factor of the weldable assembly (after welding to the test member) is commonly 5 to 10%lower than this, due primarily to the stiffness of the shim.The reduction in gage factor is not subject to quantitative generalization, because it depends on the cross-sectional properties of the test specimen, and on the mode of loading (e.g., bending versus direct stress). It has been demonstrated, however, that for a group of like specimens, loaded in the same manner, the weldable gages exhibit very good repeatability and uniformity of response. Therefore, when test requirements dictate greatest accuracy, the weldable gages should be calibrated on a specimen of the same material and cross section as the test part, and under the same mode of loading.Special Use Sensors - Weldable Strain GagesStandard Weldable PatternsMicro-MeasurementsDocument Number: 11519For technical questions, contact: micro-measurements@Note 1: Products with designations and options shown in bold are not RoHS compliant.GAGE PATTERN AND DESIGNATIONInsert Desired S-T-C No. in Spaces Marked XX.See Note 1RES.IN OHMS.DIMENSIONSCARRIERACTIVE GRID MATRIX Length Width Thick Length Width Length Width CEA-XX-W250A-120CEA-XX-W250A-350120 ± 0.4%350 ± 0.4%0.630.340.0050.2300.1250.440.1716.08.60.135.843.1811.24.3Most flexible and conformable pattern. T ype 326-DFV and 330-DFV flat three-conductor cable typically used to solder directly to copper-coated tabs.CEA-XX-W250C-120CEA-XX-W250C-350120 ± 0.4%350 ± 0.4%0.900.900.0050.2300.1250.440.1722.922.90.135.843.1811.24.3Tee rosette, used in biaxial stress states where directions of principal stresses are known. See W250A pattern for typical leadwire recom-mendations.LWK-XX-W250B-350350 ± 0.4%0.880.320.0050.2500.1250.620.1722.48.10.136.353.1815.74.3Wide-temperature-range linear pattern with 10 in [250 mm] pre-attached leads. Teflon insulation is pretreated for best bond to protective coatings.LWK-XX-W250D-350350 ± 0.4%1.15 1.150.0050.2500.1250.620.1729.229.20.136.353.1815.74.3Tee rosette, used in biaxial stress states where directions of principal stresses are known and a wide operating temperature range is required.WWT -TG-W200B-05050 ± 0.4% @ +75°F [+24°C]0.710.430.0050.2000.2000.520.2618.010.90.135.085.0813.16.6Easy-to-use temperature sensor that can be welded or adhesively bonded to the test structure. For standard bondable temperature sensors, see Document Number 11522, “T emperature Sensors and LST Networks.”Vishay Precision GroupDisclaimerALL PRODUCTS, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE.Vishay Precision Group, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay Precision Group”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.The product specifications do not expand or otherwise modify Vishay Precision Group’s terms and conditions of purchase, including but not limited to, the warranty expressed therein.Vishay Precision Group makes no warranty, representation or guarantee other than as set forth in the terms and conditions of purchase. To the maximum extent permitted by applicable law, Vishay Precision Group disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Information provided in datasheets and/or specifications may vary from actual results in different applications and performance may vary over time. Statements regarding the suitability of products for certain types of applications are based on Vishay Precision Group’s knowledge of typical requirements that are often placed on Vishay Precision Group products. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application.No license, express, implied, or otherwise, to any intellectual property rights is granted by this document, or by any conduct of Vishay Precision Group.The products shown herein are not designed for use in life-saving or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay Precision Group products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay Precision Group for any damages arising or resulting from such use or sale. Please contact authorized Vishay Precision Group personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.分销商库存信息: VISHAYLWK-06-W250B-350。

BT152-600中文资料

BT152-600中文资料

J
2.4
K5.0L Nhomakorabea2.2
M
1.25
N
0.45
O
0.6
φ
3.6
Max. 10.1 6.7 9.47 13.3 1.4
3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0
Min. 0.382 0.248 0.354 0.504 0.047
0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024
V

20
mA
VGT
Gate Trigger Voltage (2)
VD = 6 V(DC), RL=10 Ω
TC = 25 °C


1.5
V
VGD
Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω
TC = 125 °C
0.2


V
dv/dt
Critical Rate of Rise Off-State Linear slope up to VD=VDRM 67%,
元器件交易网 SemiWell Semiconductor
Preliminary
BT152-600
Silicon Controlled Rectifiers
Features
◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 20 A ) ◆ Low On-State Voltage (1.4V(Typ.)@ ITM) ◆ Non-iosolated Type

BTA12-600中文资料

BTA12-600中文资料

1/7®BTA/BTB12 and T12 SeriesSNUBBERLESS ™, LOGIC LEVEL & STANDARD12A TRIAC SSeptember 2002 - Ed: 6AMAIN FEATURES:DESCRIPTIONAvailable either in through-hole or surface-mount packages, the BTA/BTB12 and T12 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,...The snubberless versions (BTA/BTB...W and T12series) are specially recommended for use on inductive loads, thanks to their high commutation performances. Logic level versions are designed to interface directly with low power drivers such as microcontrollers. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734)Symbol Value Unit I T(RMS)12A V DRM /V RRM 600 and 800V I GT (Q 1)5 to 50mAABSOLUTE MAXIMUM RATINGSSymbol ParameterValueUnit I T(RMS)RMS on-state current (full sine wave)D ²PAK/TO-220AB Tc = 105°C 12A TO-220AB Ins.Tc = 90°C I TSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 50 Hz t = 20 ms 120AF = 60 Hzt = 16.7 ms126I ²t I ²t Value for fusingtp = 10 ms78A ²s dI/dtCritical rate of rise of on-state current I G = 2 x I GT , tr ≤ 100 nsF = 120 Hz Tj = 125°C 50A/µs V DSM /V RSM Non repetitive surge peak off-statevoltagetp = 10 ms Tj = 25°C V DRM /V RRM+ 100V I GM Peak gate currenttp = 20 µsTj = 125°C 4A P G(AV)Average gate power dissipation Tj = 125°C1W T stg T jStorage junction temperature range Operating junction temperature range- 40 to + 150- 40 to + 125°CBTA/BTB12 and T12 Series2/7ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)sSNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)sSTANDARD (4 Quadrants)STATIC CHARACTERISTICSNote 1: minimum IGT is guaranted at 5% of IGT max.Note 2: for both polarities of A2 referenced to A1Symbol Test ConditionsQuadrantT12BTA/BTB12UnitT1235TW SW CW BW I GT (1)V D = 12 V R L = 30 ΩI - II - III MAX.355103550mA V GT I - II - III MAX. 1.3V V GD V D = V DRM R L = 3.3 k ΩTj = 125°C I - II - IIIMIN.0.2V I H (2)I T = 100 mA MAX.3510153550mA I L I G = 1.2 I GTI - III MAX.5010255070mA II6015306080dV/dt (2)V D = 67 %V DRM gate open Tj = 125°CMIN.50020405001000V/µs (dI/dt)c (2)(dV/dt)c = 0.1 V/µs Tj = 125°CMIN.- 3.5 6.5--A/ms(dV/dt)c = 10 V/µs Tj = 125°C -1 2.9--Without snubber Tj = 125°C6.5-- 6.512Symbol Test ConditionsQuadrant BTA/BTB12UnitCB I GT (1)V D = 12 V R L = 30 ΩI - II - III IV MAX.255050100mA V GT ALL MAX. 1.3V V GD V D = V DRM R L = 3.3 k Ω Tj = 125°C ALLMIN.0.2V I H (2)I T = 500 mA MAX.2550mA I L I G = 1.2 I GTI - III - IVMAX.4050mA II80100dV/dt (2)V D = 67 %V DRM gate open Tj = 125°CMIN.200400V/µs (dV/dt)c (2)(dI/dt)c = 5.3 A/ms Tj = 125°CMIN.510V/µsSymbol Test ConditionsValue Unit V T (2)I TM = 17 A tp = 380 µs Tj = 25°C MAX. 1.55V V to (2)Threshold voltage Tj = 125°C MAX.0.85V R d (2)Dynamic resistance Tj = 125°C MAX.35m ΩI DRM I RRMV DRM = V RRMTj = 25°C MAX.5µA Tj = 125°C1mABTA/BTB12 and T12 Series3/7THERMAL RESISTANCESS = Copper surface under tabPRODUCT SELECTORBTB: non insulated TO-220AB packageORDERING INFORMATIONSymbol ParameterValue Unit R th(j-c)Junction to case (AC)D ²PAK/TO-220AB 1.4°C/W TO-220AB Insulated2.3R th(j-a)Junction to ambientS = 1 cm ²D ²PAK45°C/WTO-220ABTO-220AB Insulated60Part NumberVoltage (xxx)Sensitivity Type Package 600 V 800 V BTA/BTB12-xxxB X X 50 mA Standard TO-220AB BTA/BTB12-xxxBW X X 50 mA Snubberless TO-220AB BTA/BTB12-xxxC X X 25 mA Standard TO-220AB BTA/BTB12-xxxCW X X 35 mA Snubberless TO-220AB BTA/BTB12-xxxSW X X 10 mA Logic level TO-220AB BTA/BTB12-xxxTW X X 5 mA Logic Level TO-220AB T1235-xxxGXX35 mASnubberlessD ²PAKBTA/BTB12 and T12 Series4/7OTHER INFORMATIONNote: xxx = voltage, yy = sensitivity, z = typePart NumberMarkingWeight Base quantity Packing mode BTA/BTB12-xxxyz BTA/BTB12-xxxyz 2.3 g 250Bulk BTA/BTB12-xxxyzRG BTA/BTB12-xxxyz 2.3 g 50Tube T1235-xxxG T1235xxxG 1.5 g 50Tube T1235-xxxG-TRT1235xxxG1.5 g1000Tape & reelFig. 1: Maximum power dissipation versus RMSon-state current (full cycle).Fig. 2-1: RMS on-state current versus case temperature (full cycle).Fig. 2-2: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm),full cycle.Fig. 3: Relative variation of thermal impedance versus pulse duration.BTA/BTB12 and T12 Series5/7Fig. 4: On-state characteristics (maximum values).Fig. 5: Surge peak on-state current versus number of cycles.Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp <10ms, and corresponding value of I²t.Fig. 7: Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values).Fig. 8-1: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (BW/CW/T1235).Fig. 8-2: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (TW).BTA/BTB12 and T12 Series6/7Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature.Fig. 10: D²PAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35µm).PACKAGE MECHANICAL DATAFOOTPRINT DIMENSIONS (in millimeters)BTA/BTB12 and T12 Series PACKAGE MECHANICAL DATAInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.© The ST logo is a registered trademark of STMicroelectronics© 2002 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - GermanyHong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - SingaporeSpain - Sweden - Switzerland - United Kingdom - United States.7/7。

TB THB NB NHB 系列电子天平技术手册说明书

TB THB NB NHB 系列电子天平技术手册说明书

电子天平TB/THB/NB/NHB系列电子天平技术手册REV:C1,OCT2012 -II-TB/THB/NB/NHB系列电子天平技术手册目录第一章简介 (1)1.1概述 (1)1.2主要功能与特点 (1)1.3系统方块图 (1)第二章按键功能说明 (2)2.1TB/THB/NB/NHB按键图 (2)2.2各按键功能说明 (2)2.3指示说明 (2)第三章操作 (3)3.1使用注意事项 (3)3.2基本操作 (3)3.2.1开关机说明 (3)3.2.2超载警示 (3)3.2.3归零操作 (3)3.2.4扣重操作 (3)3.2.5百分数操作 (3)3. 2.6切换单位 (3)3.3简易计数操作 (4)3.3.1采样操作 (4)3.3.2计数操作 (4)3.4累加操作 (4)3.4.1累加操作注意事项 (4)3.4.2累加操作 (4)3.4.3累加显示操作 (4)3.4.4累加清除操作 (4)第四章参数设定及校正 (5)4.1进入参数设定 (5)4.2基本参数设定 (5)4.2.1设定使用之秤量单位 (5)4.2.2设定背光方式 (5)4.2.3设定打印参数 (5)4.2.4设定串口参数 (5)4.3进入技术参数及校正状态 (6)-Ⅰ-TB/THB/NB/NHB系列电子天平技术手册4.3.1线性校正 (6)4.3.2外部校正 (6)4.3.3显示内码 (6)4.3.4设定零点跟踪范围 (6)4.3.5设定AD转换速率 (6)4.4量程参数设定 (7)第五章打印及通讯 (8)5.1简易故障排除 (8)5.2边接 (8)5.3打印 (8)5.3.1普通打印 (8)5.3.2累加打印 (8)5.3.3计数打印 (8)5.4串行端口通讯说明 (8)第六章附录 (9)6.1简易故障排除 (9)6.2错误代码含义 (9)6.3打印格式 (9)6.3.1普通磅单 (9)6.3.2累加磅单 (9)6.3.3计数磅单 (9)6.4LP50打印样单 (10)6.4.1累加样单 (10)6.4.2普通样单 (10)6.4.3计数样单 (10)6.5功能设定明细表 (10)-IV-TB/THB/NB/NHB 系列电子天平技术手册-1-第一章简介1.1概述欢迎您使用本公司研制的TB/THB/NB/NHB 系列高精度电子天平。

BT-120中文资料

BT-120中文资料

©2008 Amp’ed RF Inc
1722 Ringwood Ave, Suite 250, San Jose, CA 95131, USA
BT-120/121 Datasheet Page 5 of 6
元器件交易网
Amp’ed RF, Inc.
元器件交易网
Amp’ed RF, Inc.
(phone) 408 213-9530 (fax) 408 213-9533
Product Specification
Features
Bluetooth Radio
Fully embedded Bluetooth v2.0 Serial Profile Class 2 radio Complete RF ready module Wireless data communications Integrated chip antenna 128-bit encryption security Range up to 30m LOS FCC & Bluetooth qualified
1722 Ringwood Ave, Suite 250, San Jose, CA 95131, USA
BT-120/121 Datasheet Page 4 of 6
元器件交易网
Amp’ed RF, Inc.
(phone) 408 213-9530 (fax) 408 213-9533
BT-120/121 Datasheet Page 2 of 6
元器件交易网
Amp’ed RF, Inc.
(phone) 408 213-9530 (fax) 408 213-9533
Serial Interface AT Commands

[精彩]ta12_btb12系列产品规格书

[精彩]ta12_btb12系列产品规格书

BTA12/BTB12系列产品规格书双向可控硅产品特点外形图及符号标志• NPNPN五层结构的硅双向器件;• 双面台面结构;• 台面玻璃钝化工艺;• 背面多层金属电极• 具有较高的阻断电压和较高的温度稳定性;• dv/dt高;• 适用于DB3触发和光耦触发;• TO-220AB、TO-220AB绝缘型、TO263型塑料封装;T1: 主端子1T2: 主端子2G : 触发极主要应用主要参数参数名称数值单位通态电流I T(RMS)12A • 吸尘器、电动工具等马达调速控制器;• 霓虹灯调光控制器;• 工业及家庭用加热控制(调温);•固态继电器;极限参数(绝对最大额定值)除非另有规定,这些极限值在整个工作范围内适用。

阻断电压V DRM /V RRM≥600V最大通态电压V TM≤1.55V 固态继电器;• 其它相控电路;序号参数名称符号数值单位最小值最大值1管壳温度Tcase -40125℃2储存温度Tstg -40150℃3有效结温T j -40125℃断态工作峰值电压V DWM 4804断作峰值压反向工作峰值电压V RWM 480V 5断态重复峰值电压反向重复峰值电压V DRM V RRM 600600V 6通态均方根电流360°导通角I T(RMS)12A 7通态浪涌电流F=50Hz t =20ms =167msI TSM120AF=60Hz t =16.7ms 1268I 2t值t P =10mSI 2t78A 2S9通态电流临界上升率(重复测试F=50Hz I G =50mA di g /d t =0.1A/uS)di/dt50A/uS10门极峰值电流Tp=20uS Tj=125℃I GM4A门极平均耗散功率11Tj=125℃P G(AV)1W产品电特性(除非另有规定,Tcase=25℃)序号特性和测试条件符号象限BTA12/BTB12单位最小值最大值CBC B 1通态峰值电压I T =17A V TM 1.55V 反向峰值电流(V RRM 下的漏电流)Tcase 25℃I 10uA 2Tcase=25℃Tcase=125℃RRM1I RRM21mA 3断态峰值电流(V DRM 下的漏电流)Tcase=25℃Tcase=125℃I DRM1I DRM2101uA mA 4维持电流I T=0.5A I H ALL2550mA 5擎住电流I G=1.2I GT I LⅠ、Ⅲ、Ⅳ4050mA Ⅱ801006控制极触发电流V D =12V I GT Ⅰ、Ⅱ、Ⅲ2550mA Ⅳ501007控制极触发电压V D =12V V GT ALL1.3V 8控制极不触发电压V D =600VT j =125℃V GD 0.2V 9断态电压临界上升率V D =400V门极开路T j =125℃dV/dt200400V/uS热阻名称符号数值单位热阻(结至壳温的最大值)R th(j-c)1.4/2.3℃/W型号说明BTA12可控硅产品A:绝缘型结构B:非绝缘型结构通态均方根电流为12A600B阻断电压≥600V触发电流分档序号:B:I GT1~I GT3 50mA Max C:I GT1~I GT3 25mA Max产品外形尺寸图TO-220AB封装外形图尺寸数据表(单位:mm):符号A B C D E F G H I J K L M N MIN15.2013.0010.00 2.6515.80 1.140.61 2.40 4.40 1.23 6.200.49 2.40 TYP 3.7516.40MAX15.9014.0014.00 2.9516.75 1.700.88 2.70 4.60 1.32 6.600.70 2.70 TO-263封装外形图尺寸数据表(单位:mm):符号A A1A2B B2C C2D E G L L2L3R MIN 4.30 2.490.030.70 1.250.45 1.218.9510.0 4.8815.0 1.27 1.40TYP 1.400.40 MAX 4.60 2.690.230.930.60 1.369.3510.28 5.2815.85 1.40 1.75常用电路图图1:电动工具软启动电路,软启动可以避免可控硅对电网的污染和电动工具启动时的抖动图2:双向可控硅用于自动咖啡机的控温电路,此电路使用过零触发光耦,可以联系信息望爵电子科技(上海)有限公司i ill l i h l i i d 图双向可控硅用于自动咖啡机的控温电路,此电路使用过零触发光耦,可以改善可控硅的触发特性。

BTB16-600CW3G中文资料

BTB16-600CW3G中文资料

Features
•ăBlocking Voltage to 800 V •ăOn‐State Current Rating of 16 A RMS at 25°C •ăUniform Gate Trigger Currents in Three Quadrants •ăHigh Immunity to dV/dt - 1000 V/ms minimum at 125°C •ăMinimizes Snubber Networks for Protection •ăIndustry Standard TO‐220AB Package •ăHigh Commutating dI/dt - 6.0 A/ms minimum at 125°C •ăThese are Pb-Free Devices
VTM
-
-
IGT
2.0
-
2.0
-
2.0
-
Holding Current (VD = 12 V, Gate Open, Initiating Current = ±500 mA)
Latching Current (VD = 12 V, IG = 1.2 x IGT) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-)
+
(+) MT2
(+) MT2
Quadrant II IGT -
(-) IGT GATE
MT1
REF
(-) MT2
(+) IGT GATE
MT1
REF
(-) MT2
Quadrant I + IGT
Quadrant III
(-) IGT GATE

BT152B-400R,118;BT152B-600R,118;BT152B-800R,118;中文规格书,Datasheet资料

BT152B-400R,118;BT152B-600R,118;BT152B-800R,118;中文规格书,Datasheet资料

BT152B series ThyristorsThyristors BT152B seriesGENERAL DESCRIPTIONQUICK REFERENCE DATAGlass passivated thyristors in a plastic SYMBOL PARAMETERMAX.MAX.MAX.UNIT envelope suitable for surface mounting,intended for use in BT152B-400R 600R 800R applications requiring high V DRM ,Repetitive peak off-state 450650800V bidirectional blocking voltage V RRM voltagescapability and high thermal cycling I T(AV)Average on-state current 131313A performance.Typical applications I T(RMS)RMS on-state current202020A include motor control,industrial and I TSMNon-repetitive peak on-state 200200200Adomestic lighting,heating and static currentswitching.PINNING - SOT404PIN CONFIGURATIONSYMBOLPIN DESCRIPTION 1cathode 2anode 3gate mbanodeLIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETERCONDITIONSMIN.MAX.UNIT -400R -600R -800R V DRM Repetitive peak off-state -45016501800V voltagesI T(AV)Average on-state current half sine wave; T mb ≤ 103 ˚C -13A I T(RMS)RMS on-state current all conduction angles-20A I TSMNon-repetitive peak half sine wave; T j = 25 ˚C prior to on-state currentsurge t = 10 ms -200A t = 8.3 ms -220A I 2t I 2t for fusingt = 10 ms-200A 2s dI T /dt Repetitive rate of rise of I TM = 50 A; I G = 0.2 A;-200A/μs on-state current after dI G /dt = 0.2 A/μs triggeringI GM Peak gate current -5A V GM Peak gate voltage-5V V RGM Peak reverse gate voltage -5V P GM Peak gate power -20W P G(AV)Average gate power over any 20 ms period -0.5W T stg Storage temperature -40150˚C T jOperating junction -125˚Ctemperature1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.Thyristors BT152B seriesTHERMAL RESISTANCESSYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNIT R th j-mb Thermal resistance-- 1.1K/W junction to mounting base R th j-aThermal resistance minimum footprint, FR4 board -55-K/Wjunction to ambientSTATIC CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNIT I GT Gate trigger current V D = 12 V; I T = 0.1 A -332mA I L Latching current V D = 12 V; I GT = 0.1 A -2580mA I H Holding current V D = 12 V; I GT = 0.1 A -1560mA V T On-state voltage I T = 40 A- 1.4 1.75V V GT Gate trigger voltage V D = 12 V; I T = 0.1 A-0.6 1.5V V D = V DRM(max); I T = 0.1 A; T j = 125 ˚C 0.250.4-V I D , I ROff-state leakage currentV D = V DRM(max); V R = V RRM(max); T j = 125 ˚C-0.21.0mADYNAMIC CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNIT dV D /dt Critical rate of rise of V DM = 67% V DRM(max); T j = 125 ˚C;200300-V/μs off-state voltageexponential waveform gate open circuit t gt Gate controlled turn-on V D = V DRM(max); I G = 0.1 A; dI G /dt = 5 A/μs;-2-μs timeI TM = 40 At qCircuit commutated V D = 67% V DRM(max); T j = 125 ˚C;-70-μsturn-off timeI TM = 50 A; V R = 25 V; dI TM /dt = 30 A/μs;dV D /dt = 50 V/μs; R GK = 100 ΩThyristors BT152B seriesThyristors BT152B seriesThyristors BT152B seriesMECHANICAL DATANotes1. Epoxy meets UL94 V0 at 1/8".MOUNTING INSTRUCTIONS1. Plastic meets UL94 V0 at 1/8".Legal informationDATA SHEET STATUSNotes1.Please consult the most recently issued document before initiating or completing a design.2.The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet at URL . DOCUMENT STATUS (1)PRODUCT STATUS (2)DEFINITIONObjective data sheet Development This document contains data from the objective specification for product development.Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet ProductionThis document contains the product specification.DEFINITIONSProduct specification ⎯ The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXPSemiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.DISCLAIMERSLimited warranty and liability ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give anyrepresentations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or reworkcharges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’aggregate and cumulative liability towards customer for the products described herein shall be limited inaccordance with the Terms and conditions of commercial sale of NXP Semiconductors.Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to informationpublished in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severeproperty or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s own risk.Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXPSemiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXPSemiconductors product is suitable and fit for thecustomer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.Legal informationNXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third partycustomer(s). NXP does not accept any liability in this respect.Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.Terms and conditions of commercial sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at /profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.Export control ⎯ This document as well as the item(s) described herein may be subject to export controlregulations. Export might require a prior authorization from national authorities.Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.Non-automotive qualified products ⎯ Unless this data sheet expressly states that this specific NXPSemiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.In the event that customer uses the product for design-in and use in automotive applications to automotivespecifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXPSemiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.Contact informationFor additional information please visit: For sales offices addresses send e-mail to: salesaddresses@Customer notificationThis data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the content, except for the legal definitions and disclaimers. © NXP B.V. 2011All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Printed in The Netherlands分销商库存信息:NXPBT152B-400R,118BT152B-600R,118BT152B-800R,118。

B-12EH中文资料

B-12EH中文资料

Distinctive Characteristics Subminiature size saves space on PC boards.Specifically developed for logic-level applications.Antistatic superstructure, consisting of the carbon impregnatedbushing and the support bracket, prevents static dischargeto the contacts. Static electricity from an operator’s touchtravels from actuator through the bushing and bracket tothe PC board.Locking lever mechanism offered as a toggle option.Optional threaded, 6mm diameter bushing forpanel seal mounting meets IP65 of IEC60529specifications (similar to NEMA 4 and 13).Totally sealed body construction preventscontact contamination and allows time-and money-saving soldering and cleaning.Epoxy sealed terminals lock out flux andother contaminants.Award-winning STC contact mechanism withbenefits unavailable in conventional mechanisms:smoother, positive detent actuation, increased contactstability and unparalleled logic-level reliability. (AdditionalSTC details in Terms & Acronyms; see Supplement section.).100” x .100” (2.54mm x 2.54mm) terminal spacingconforms to standard PC board grid spacing.Illuminated toggles available and shown in the Illuminated Other section.Actual SizeGeneral SpecificationsElectrical Capacity (Resistive Load)Logic Level:0.4VA maximum @ 28V AC/DC maximum(Applicable Range 0.1mA ~ 0.1A @ 20mV ~ 28V)Note: Find additional explanation of operating range in Supplement section.Other RatingsContact Resistance: 50 milliohms maximumInsulation Resistance: 500 megohms minimum @ 500V DCDielectric Strength: 500V AC minimum for 1 minute minimumMechanical Life: 100,000 operations minimum for On-None-On & On-Off-On50,000 operations minimum for other circuits50,000 operations minimum for locking lever modelsElectrical Life: 50,000 operations minimumNominal Operating Force:Toggles A, A1, E & K with Long Paddle: 1.47N (momentary); 1.18N (maintained)Toggles J & H & K with Short Paddle: 2.72N (momentary); 1.84N (maintained)Toggle L: 0.59NContact Timing: Nonshorting (break-before-make)Angle of Throw: 26°Materials & FinishesToggle: Nickel plated brassBushing: Carbon blended polyamide; nickel plated zinc alloy for locking levers & threaded bushingGasket: Nitrile butadiene rubberCase Housing: Glass fiber reinforced polyamideSupport Bracket: Tin plated phosphor bronzeMovable Contact: Phosphor bronze with gold platingStationary Contacts: Copper alloy with gold platingTerminals:Copper alloy with gold platingEnvironmental DataOperating Temperature Range: –30°C through +85°C (–22°F through +185°F)Humidity: 90 ~ 95% humidity for 96 hours @ 40°C (104°F)Vibration: 10 ~ 55Hz with peak-to-peak amplitude of 1.5mm traversing the frequency range& returning in 1 minute; 3 right angled directions for 2 hoursShock: 50G (490m/s2) acceleration (tested in 6 right angled directions, with 5 shocks in each direction)InstallationMounting Torque: .30 ~ .45Nm (2.65 ~ 3.98 lb•in) for A1 actuator with threaded bushing onlyPCB ProcessingSoldering: Wave Soldering Recommended: See Profile A in Supplement section.Manual Soldering: See Profile A in Supplement section.Cleaning:Automated cleaning. See Cleaning specifications in Supplement section.Standards & CertificationsFlammability Standards: UL94V-0 availableUL Recognition The B Series toggles have not been tested for UL recognition or CSA certification.or CSA Certification: These switches are designed for use in a low-voltage, low-current, logic-level circuit.When used as intended in a logic-level circuit, the results do not produce hazardous energy.TYPICAL SWITCH ORDERING EXAMPLEStraight PC Terminalswith Bracket SPDTON-NONE-ON CircuitTOGGLES.394” (10.0mm) BatA Standard Material & Finish: Brass with Bright Nickel.248” (6.3mm) BatJ A1.315” (8.0mm) Bat withPanel Seal Threaded BushingHKL.248” (6.3mm) FlattedSnap Top for PaddlesLocking Lever.394” (10.0mm) FlattedEPC TERMINALSColor Codes:StraightMaterial: PVC Colors Available:A, B, CStraight with BracketMaterial: PVC Colors Available:A, B, CBlackWhiteRedYellowGreenBlueABCEFGPBRight Angle with BracketVertical with BracketVStraight LongWOPTIONAL CAPSAT4003.394” (10.0mm) Bat Lever CapGAT4064.248” (6.3mm) Bat Lever CapJAT467Short Paddle for K ToggleAAT468Long Paddle for K ToggleBMaterial: Polyamide Colors Available:A, B, C, E, F , G, HMaterial: Polyamide Colors Available:A, B, C, E, F, G, HGrayH.024H.024.100PADDLESUse of a support bracket is recommended to increase PCB mounting strength and stability.Straight PCSingle PoleStraight PC • BracketSingle PoleStraight PCDouble PoleStraight PC • BracketDouble PoleB12APB22APB12ABB12AHLRight Angle PCSingle PoleB22AB.102.236.236.236L.236Vertical PCDouble PoleLocking Lever • Straight PC • BracketDouble PoleB22AVB22LBRight Angle PCDouble PoleVertical PCSingle PoleB22AHB12AVLocking Lever • Straight PC • BracketSingle PoleB12LB.236.236.024.236.024.102Threaded Bushing • Straight PCPanel Seal • Single PoleThreaded Bushing • Straight PC Panel Seal • Double PoleB12A1PB22A1PSTANDARD HARDWARE & PANEL CUTOUTAT513MMetric Hex NutMaterial: Brass,Nickel platedAT063GasketMaterial:Nitrile butadiene rubberMaximum Panel Thickness with Standard Hardware:.087” (2.2mm)L。

BTB12-800BW3G中文资料

BTB12-800BW3G中文资料
+
(+) MT2
(+) MT2
Quadrant II IGT -
(-) IGT GATE
MT1
REF
(-) MT2
(+) IGT GATE
MT1
REF
(-) MT2
Quadrant I + IGT
Quadrant III
REF
(+) IGT GATE
MT1
REF
Quadrant IV
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
Main Terminal 2
ORDERING INFORMATION
Device
Package
BTB12-600BW3G TO-220AB (Pb-Free)
Shipping 50 Units / Rail
BTB12-800BW3G TO-220AB 50 Units / Rail (Pb-Free)
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
Symbol
RqJC RqJA
TL
Value
2.3 60
260
Unit °C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
VGD
0.2
-
0.2
-
0.2

BTB20-600BW中文资料

BTB20-600BW中文资料

I A
l4
a1
c2
c2 e F I I4 L
c1
l3
l2 a2
15.80 16.40 16.80 0.622 0.646 0.661
b1 e
M
l2 l3 M
OTHER INFORMATION
Ordering type BTA/BTB20-xxxyz
s s s s
Marking BTA/BTB20-xxxyz
BTA/BTB20-...BW/CW Symbol VDRM VRRM Parameter 600 700 700 V Unit 600
Repetitive peak off-state voltage Tj = 125°C
September 2001 - Ed: 1A
1/6
元器件交易网
GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 10W (tp = 20µs) IGM = 4A (tp = 20µs)
VGM = 16V (tp = 20µs)
ELECTRICAL CHARACTERISTICS
BTA / BTB20 Symbol IGT Test conditions VD = 12V (DC) RL = 33Ω Tj = 25°C Quadrant BW I - II - III MIN. MAX. VGT VGD tgt IL VD = 12V (DC) VD = VDRM RL = 33Ω RL = 3.3kΩ Tj = 25°C Tj =125°C Tj = 25°C Tj = 25°C I - II - III I - II - III I - II - III I - III II I - II - III IH* VTM * IDRM IRRM dV/dt * IT = 500mA Gate open ITM = 28A VDRM rated VRRM rated Linear slope up to VD = 67% VDRM gate open Without snubber tp = 380µs Tj = 25°C Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C MAX. MAX. MAX. MAX. MAX. TYP. MIN. (dI/dt)c* Tj = 125°C TYP. MIN. 750 500 36 18 MAX. MIN. TYP. TYP. 50 90 75 1.70 0.01 3 500 250 22 11 A/ms V/µs 2 50 1.5 0.2 2 80 50 mA V mA CW 1 35 V V µs mA mA Unit

BTB06-600C中文资料

BTB06-600C中文资料

1/6®BTA/BTB06 SeriesSNUBBERLESS ™, LOGIC LEVEL & STANDARD6A TRIAC SApril 2002 - Ed: 5AMAIN FEATURES:DESCRIPTIONSuitable for AC switching operations, the BTA/BTB06 series can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control in light dimmers, motor speed controllers,...The snubberless and logic level versions (BTA/BTB...W) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad,the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734)Symbol Value Unit I T(RMS)6A V DRM /V RRM600 and 800VI G (Q 1)5 to 50mAABSOLUTE MAXIMUM RATINGSSymbol ParameterValueUnit I T(RMS)RMS on-state current (full sine wave)TO-220ABTc = 110°C 6ATO-220AB Ins.Tc = 105°C I TSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 50 Hz t = 20 ms 60AF = 60 Hzt = 16.7 ms63I ²t I ²t Value for fusingtp = 10 ms21A ²s dI/dt Critical rate of rise of on-state current I G = 2 x I GT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50A/µs I GM Peak gate currenttp = 20 µsTj = 125°C 4A P G(AV)Average gate power dissipation Tj = 125°C1W T stg T jStorage junction temperature range Operating junction temperature range- 40 to + 150- 40 to + 125°CBTA/BTB06 Series2/6ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)sSNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)sSTANDARD (4 Quadrants)STATIC CHARACTERISTICSNote 1: minimum IGT is guaranted at 5% of IGT max.Note 2: for both polarities of A2 referenced to A1Symbol Test ConditionsQuadrantBTA/BTB06UnitTWSW CW BW I GT (1)V D = 12 V R L = 30 ΩI - II - III MAX.5103550mA V GT I - II - III MAX. 1.3V V GD V D = V DRM R L = 3.3 k ΩTj = 125°C I - II - IIIMIN.0.2V I H (2)I T = 100 mA MAX.10153550mA I L I G = 1.2 I GTI - III MAX.10255070mA II15306080dV/dt (2)V D = 67 %V DRM gate open Tj = 125°CMIN.20404001000V/µs (dI/dt)c (2)(dV/dt)c = 0.1 V/µs Tj = 125°C MIN.2.73.5--A/ms(dV/dt)c = 10 V/µs Tj = 125°C 1.2 2.4--Without snubber Tj = 125°C-- 3.55.3Symbol Test ConditionsQuadrant BTA/BTB06UnitCB I G (1)V D = 12 V R L = 30 ΩI - II - III IV MAX.255050100mA V GT ALL MAX. 1.3V V GD V D = V DRM R L = 3.3 k Ω Tj = 125°C ALLMIN.0.2V I H (2)I T = 500 mA MAX.2550mA I L I G = 1.2 I GTI - III - IVMAX.4050mA II80100dV/dt (2)V D = 67 %V DRM gate open Tj = 125°CMIN.200400V/µs (dV/dt)c (2)(dI/dt)c = 2.7 A/ms Tj = 125°CMIN.510V/µsSymbol Test ConditionsValue Unit V T (2)I TM = 5.5 A tp = 380 µs Tj = 25°C MAX. 1.55V V to (2)Threshold voltage Tj = 125°C MAX.0.85V R d (2)Dynamic resistance Tj = 125°C MAX.60m ΩI DRM I RRMV DRM = V RRMTj = 25°C MAX.5µA Tj = 125°C1mABTA/BTB06 Series3/6THERMAL RESISTANCESPRODUCT SELECTORBTB: non insulated TO-220AB packageORDERING INFORMATIONOTHER INFORMATIONNote: xxx = voltage, y = sensitivity, z = typeSymbol ParameterValue Unit R th(j-c)Junction to case (AC)TO-220AB 1.8°C/WTO-220AB Insulated 2.7R th(j-a)Junction to ambientTO-220ABTO-220AB Insulated60°C/W Part NumberVoltage (xxx)SensitivityType Package 600 V800 V BTA/BTB06-xxxB X X 50 mA Standard TO-220AB BTA/BTB06-xxxBW X X 50 mA Snubberless TO-220AB BTA/BTB06-xxxC X X 25 mA Standard TO-220AB BTA/BTB06-xxxCW X X 35 mA Snubberless TO-220AB BTA/BTB06-xxxSW X X 10 mA Logic level TO-220AB BTA/BTB06-xxxTWXX5 mALogic levelTO-220ABPart NumberMarkingWeight Base quantity Packing mode BTA/BTB06-xxxyz BTA/BTB06-xxxyz 2.3 g 250Bulk BTA/BTB06-xxxyzRGBTA/BTB06-xxxyz2.3 g50TubeBTA/BTB06 Series4/6Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle).Fig. 2: RMS on-state current versus case temperature (full cycle).Fig. 3: Relative variation of thermal impedance versus pulse duration.Fig. 4: On-state characteristics (maximum values).Fig. 5: Surge peak on-state current versus number of cycles.Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp <10ms, and corresponding value of I²t.BTA/BTB06 Series5/6Fig. 7: Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values).Fig. 8-1: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Snubberless & Logic Level T ypesFig. 8-2: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Standard T ypesFig. 9: Relative variation of critical rate of decrease of main current versus junction temperature.BTA/BTB06 SeriesPACKAGE MECHANICAL DATAInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.© The ST logo is a registered trademark of STMicroelectronics© 2002 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - GermanyHong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - SingaporeSpain - Sweden - Switzerland - United Kingdom - United States.6/6。

BS123中文资料

BS123中文资料
元器件交易网
BS123
DMOS Transistors (N-Channel)
TO-92
.181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6)
FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦
High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown
1)
Min. 60 – – – 1 –
Typ. 80 – – – 1.5 0.3
Max. – 500 500 250 3 0.4
Unit V nA nA µA V Ω
V(BR)DSS IGSSF IGSSR IDSS VGS(th) RDS(on)
CiSS COSS CrSS
– – –
350 150 35
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage (pulsed) Drain Current (continuous) at Tamb1) = 25 °C, at TSB2) = 50 °C Power Dissipation at Tamb1) = 25 °C, at TSB2) = 50 °C Junction Temperature Storage Temperature Range

BTA212X-800B,127;BTA212X-600B,127;中文规格书,Datasheet资料

BTA212X-800B,127;BTA212X-600B,127;中文规格书,Datasheet资料

BTA212X series B Three quadrant triacs high commutationThree quadrant triacs BTA212X series Bhigh commutationGENERAL DESCRIPTIONQUICK REFERENCE DATAGlass passivated high commutation SYMBOL PARAMETERMAX.MAX.MAX.UNIT triacs in a full pack,plastic envelope intended for use in circuits where high BTA212X-500B 600B 800B static and dynamic dV/dt and high V DRM Repetitive peak off-state 500600800V dI/dt can occur.These devices will voltagescommutate the full rated rms current I T(RMS)RMS on-state current121212A at the maximum rated junction I TSMNon-repetitive peak on-state 959595Atemperature,without the aid of a currentsnubber.PINNING - SOT186APIN CONFIGURATIONSYMBOLPIN DESCRIPTION 1main terminal 12main terminal 23gatecase isolatedLIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETERCONDITIONSMIN.MAX.UNIT -500-600-800V DRM Repetitive peak off-state -50016001800V voltagesI T(RMS)RMS on-state current full sine wave;-12AT hs ≤ 56 ˚C I TSMNon-repetitive peak full sine wave;on-state currentT j = 25 ˚C prior to surge t = 20 ms -95A t = 16.7 ms -105A I 2t I 2t for fusingt = 10 ms-45A 2s dI T /dt Repetitive rate of rise of I TM = 20 A; I G = 0.2 A;100A/μs on-state current after dI G /dt = 0.2 A/μs triggeringI GM Peak gate current -2A V GM Peak gate voltage -5V P GM Peak gate power -5W P G(AV)Average gate power over any 20 ms -0.5W periodT stg Storage temperature -40150˚C T jOperating junction -125˚Ctemperature123case1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.Three quadrant triacs BTA212X series Bhigh commutationISOLATION LIMITING VALUE & CHARACTERISTICT hs = 25 ˚C unless otherwise specified SYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNIT V isol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal -2500V three terminals to external waveform;heatsinkR.H. ≤ 65% ; clean and dustfreeC isolCapacitance from T2 to external f = 1 MHz -10-pFheatsinkTHERMAL RESISTANCESSYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNIT R th j-hs Thermal resistance full or half cyclejunction to heatsink with heatsink compound -- 4.0K/W without heatsink compound -- 5.5K/W R th j-aThermal resistance in free air-55-K/Wjunction to ambientSTATIC CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT I GTGate trigger current 2V D = 12 V; I T = 0.1 AT2+ G+21850mA T2+ G-22150mA T2- G-23450mA I LLatching currentV D = 12 V; I GT = 0.1 AT2+ G+-3160mA T2+ G--3490mA T2- G--3060mA I H Holding current V D = 12 V; I GT = 0.1 A -3160mA V T On-state voltage I T = 17 A- 1.3 1.6V V GT Gate trigger voltage V D = 12 V; I T = 0.1 A-0.7 1.5V V D = 400 V; I T = 0.1 A; T j = 125 ˚C 0.250.4-V I DOff-state leakage currentV D = V DRM(max); T j = 125 ˚C-0.10.5mADYNAMIC CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNIT dV D /dt Critical rate of rise of V DM = 67% V DRM(max); T j = 125 ˚C;10004000-V/μs off-state voltageexponential waveform; gate open circuit dI com /dt Critical rate of change of V DM = 400 V; T j = 125 ˚C; I T(RMS) = 12 A;-24-A/ms commutating current without snubber; gate open circuit t gtGate controlled turn-on I TM = 12 A; V D = V DRM(max); I G = 0.1 A;-2-μstimedI G /dt = 5 A/μs2 Device does not trigger in the T2-, G+ quadrant.Three quadrant triacs BTA212X series Bhigh commutationThree quadrant triacs BTA212X series Bhigh commutationThree quadrant triacs BTA212X series B high commutationMECHANICAL DATANotes1. Refer to mounting instructions for F-pack envelopes.2. Epoxy meets UL94 V0 at 1/8".Legal informationDATA SHEET STATUSNotes1.Please consult the most recently issued document before initiating or completing a design.2.The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet at URL . DOCUMENT STATUS (1)PRODUCT STATUS (2)DEFINITIONObjective data sheet Development This document contains data from the objective specification for product development.Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet ProductionThis document contains the product specification.DEFINITIONSProduct specification ⎯ The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXPSemiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.DISCLAIMERSLimited warranty and liability ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give anyrepresentations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or reworkcharges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’aggregate and cumulative liability towards customer for the products described herein shall be limited inaccordance with the Terms and conditions of commercial sale of NXP Semiconductors.Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to informationpublished in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severeproperty or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s own risk.Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXPSemiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXPSemiconductors product is suitable and fit for thecustomer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.Legal informationNXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third partycustomer(s). NXP does not accept any liability in this respect.Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.Terms and conditions of commercial sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at /profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.Export control ⎯ This document as well as the item(s) described herein may be subject to export controlregulations. Export might require a prior authorization from national authorities.Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.Non-automotive qualified products ⎯ Unless this data sheet expressly states that this specific NXPSemiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.In the event that customer uses the product for design-in and use in automotive applications to automotivespecifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXPSemiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.Contact informationFor additional information please visit: For sales offices addresses send e-mail to: salesaddresses@Customer notificationThis data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the content, except for the legal definitions and disclaimers. © NXP B.V. 2011All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Printed in The Netherlands分销商库存信息:NXPBTA212X-800B,127BTA212X-600B,127。

BT139-600EDG,127;中文规格书,Datasheet资料

BT139-600EDG,127;中文规格书,Datasheet资料

1.Product profile1.1General descriptionPlanar passivated sensitive gate four quadrant triac in a SOT78 (TO-220AB) plasticpackage intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.1.2Features and benefitsDirect triggering from low power drivers and logic ICs High blocking voltage capabilityPlanar passivated for voltage ruggedness and reliability Sensitive gateTriggering in all four quadrants1.3ApplicationsGeneral purpose motor controlGeneral purpose switching1.4Quick reference dataBT139-600E4Q TriacRev. 05 — 24 March 2011Product data sheetTable 1.Quick reference data Symbol Parameter ConditionsMin Typ Max Unit V DRM repetitive peak off-state voltage --600V I TSMnon-repetitive peak on-state current full sine wave; T j(init)=25°C; t p =20ms; see Figure 4; see Figure 5--155AI T(RMS)RMS on-state currentfull sine wave; T mb ≤99°C; see Figure 1; see Figure 2; see Figure 3--16A2.Pinning information3.Ordering informationStatic characteristicsI GTgate trigger currentV D =12V;I T =0.1A; T2+ G+; T j =25°C; see Figure 7- 2.510mA V D =12V; I T =0.1A; T2+ G-; T j =25°C; see Figure 7-410mA V D =12V; I T =0.1A; T2- G-; T j =25°C; see Figure 7-510mA V D =12V; I T =0.1A; T2- G+; T j =25°C; see Figure 7-1125mATable 1.Quick reference data …continued Symbol Parameter ConditionsMin Typ Max Unit Table 2.Pinning information Pin Symbol Description Simplified outline Graphic symbol1T1main terminal 1SOT78 (TO-220AB)2T2main terminal 23G gatembT2mounting base; main terminal 212mb3sym051T1GT2Table 3.Ordering informationType numberPackage NameDescriptionVersion BT139-600E TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220ABSOT78BT139-600E/DGTO-220ABplastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220ABSOT784.Limiting valuesTable 4.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditionsMin Max Unit V DRM repetitive peak off-state voltage -600V I T(RMS)RMS on-state current full sine wave; T mb ≤99°C;see Figure 1; see Figure 2; see Figure 3-16A I TSMnon-repetitive peak on-state current full sine wave; T j(init)=25°C;t p =20ms; see Figure 4; see Figure 5-155A full sine wave; T j(init)=25°C;t p =16.7ms-170A I 2t I 2t for fusingt p =10ms; sine-wave pulse-120A 2s dI T /dtrate of rise of on-state currentI T =20A;I G =0.2A; dI G /dt =0.2A/µs; T2+ G+-50A/µs I T =20A;I G =0.2A; dI G /dt =0.2A/µs; T2+ G--50A/µs I T =20A;I G =0.2A; dI G /dt =0.2A/µs; T2- G--50A/µs I T =20A;I G =0.2A; dI G /dt =0.2A/µs; T2- G+-10A/µs I GM peak gate current -2A V GM peak gate voltage -5V P GM peak gate power -5W P G(AV)average gate power over any 20 ms period-0.5W T stg storage temperature -40150°C T jjunction temperature-125°CNon-repetitive peak on-state current as a function of pulse width; maximum values5.Thermal characteristicsTable 5.Thermal characteristicsSymbol ParameterConditionsMin Typ Max Unit R th(j-mb)thermal resistance from junction to mounting base half cycle; see Figure 6-- 1.7K/W full cycle; see Figure 6-- 1.2K/W R th(j-a)thermal resistance from junction to ambientin free air -60-K/W6.CharacteristicsTable 6.CharacteristicsSymbol Parameter Conditions Min Typ Max Unit Static characteristicsI GT gate trigger current V D=12V;I T=0.1A; T2+ G+; T j=25°C;see Figure 7- 2.510mAV D=12V;I T=0.1A; T2+ G-; T j=25°C;see Figure 7-410mAV D=12V; I T=0.1A; T2- G-; T j=25°C;see Figure 7-510mAV D=12V;I T=0.1A; T2- G+; T j=25°C;see Figure 7-1125mAI L latching current V D=12V; I G=0.1A; T2+ G+;T j=25°C; see Figure 8- 3.230mAV D=12V;I G=0.1A; T2+ G-; T j=25°C;see Figure 8-1640mAV D=12V; I G=0.1A; T2- G-; T j=25°C;see Figure 8-430mAV D=12V;I G=0.1A; T2- G+; T j=25°C;see Figure 8- 5.540mA I H holding current V D=12V; T j=25°C;see Figure 9-445mA V T on-state voltage I T=20A;T j=25°C;see Figure 10- 1.2 1.6VV GT gate trigger voltage V D=12V; I T=0.1A; T j=25°C;see Figure 11-0.7 1.5VV D=400V; I T=0.1A; T j=125°C;see Figure 110.250.4-VI D off-state current V D=600V; T j=125°C-0.10.5mA Dynamic characteristicsdV D/dt rate of rise of off-statevoltage V DM=402V; T j=125°C; exponentialwaveform; gate open circuit-50-V/µst gt gate-controlled turn-ontime I TM=20A; V D=600V; I G=0.1A;dI G/dt=5A/µs-2-µsOn-state current as a function of on-state7.Package outlineFig 12.Package outline SOT78 (TO-220AB)分销商库存信息: NXPBT139-600E/DG,127。

SemiWell Semiconductor BTA12-600B 说明书

SemiWell Semiconductor BTA12-600B 说明书

现货库存、技术资料、百科信息、热点资讯,精彩尽在鼎好!Absolute Maximum Ratings ( T J = 25°C unless otherwise specified )SymbolParameterCondition RatingsUnitsV DRM Repetitive Peak Off-State Voltage 600V I T(RMS)R.M.S On-State Current T C = 79 °C12A I TSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive119/130A I 2t I 2t71A 2s P GM Peak Gate Power Dissipation 5.0W P G(AV)Average Gate Power Dissipation 0.5W I GM Peak Gate Current 2.0A V GM Peak Gate Voltage10V V ISO Isolation Breakdown Voltage(R.M.S.) A.C. 1 minute 1500V T J Operating Junction Temperature - 40 ~ 125°C T STGStorage Temperature - 40 ~ 150°C Mass2.0gMar, 2004. Rev. 0Features◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( I T(RMS)= 12 A )◆ High Commutation dv/dt◆ Isolation Voltage ( V ISO = 1500V AC )General DescriptionThis device is fully isolated package suitable for AC switchingapplication, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.This device is approved to comply with applicable require-ments by Underwriters Laboratories Inc.2.T23.Gate1.T1Symbol○○○▼▲1/6BTA12-600BSemiWell Semiconductor Bi-Directional Triode Thyristorcopyright@SemiWell Semiconductor Co., Ltd., All rights reserved.UL : E228720PreliminaryElectrical CharacteristicsSymbol Items ConditionsRatingsUnit Min.Typ.Max.I DRM Repetitive Peak Off-StateCurrentV D = V DRM, Single Phase, Half WaveT J = 125 °C──2.0mAV TM Peak On-State Voltage I T = 20 A, Inst. Measurement── 1.4VI+GT1ⅠGate Trigger Current V D = 6 V, R L=10Ω──30mAI-GT1Ⅱ──30 I-GT3Ⅲ──30V+GT1ⅠGate Trigger Voltage V D = 6 V, R L=10Ω── 1.5VV-GT1Ⅱ── 1.5V-GT3Ⅲ── 1.5V GD Non-Trigger Gate Voltage T J = 125 °C, V D = 1/2 V DRM0.2──V(dv/dt)c Critical Rate of Rise Off-StateVoltage at CommutationT J = 125 °C, [di/dt]c = -6.0 A/ms,V D=2/3 V DRM10──V/㎲I H Holding Current─20─mAR th(j-c)Thermal Impedance Junction to case── 3.3°C/W BTA12-600B2/6Fig 3. On State Current vs.Fig 4. On State Current vs.BTA12-600B4/6Fig 9. Gate Trigger Characteristics Test CircuitGGGTest Procedure ⅠTest Procedure ⅡTest Procedure ⅢBTA12-600BDim.mm Inch Min.Typ.Max.Min.Typ.Max.A 10.410.60.4090.417B 6.18 6.440.2430.254C 9.559.810.3760.386D 13.4713.730.5300.540E 6.05 6.150.2380.242F 1.26 1.360.0500.054G 3.17 3.430.1250.135H 1.87 2.130.0740.084I 2.57 2.830.1010.111J 2.540.100K 5.080.200L 2.51 2.620.0990.103M 1.25 1.550.0490.061N 0.450.630.0180.025O0.61.00.0240.039φ 3.70.146φ1 3.20.126φ21.50.059TO-220F Package Dimension5/6BTA12-600BDim.mm InchMin.Typ.Max.Min.Typ.Max.A10.410.60.4090.417B 6.18 6.440.2430.254C9.559.810.3760.386D8.48.660.3310.341E 6.05 6.150.2380.242F 1.26 1.360.0500.054G 3.17 3.430.1250.135H 1.87 2.130.0740.084I 2.57 2.830.1010.111J 2.540.100K 5.080.200L 2.51 2.620.0990.103M 1.25 1.550.0490.061N0.450.630.0180.025O0.6 1.00.0240.039P 5.00.197φ 3.70.146φ1 3.20.126φ2 1.50.059TO-220F Package Dimension, FormingBTA12-600B 6/6。

BTA312B-600B中文资料

BTA312B-600B中文资料

1.Product profile1.1General descriptionPassivated, new generation, high commutation triacs in a SOT404 plastic single-ended surface-mountable package1.2Features1.3Applications1.4Quick reference data2.Pinning informationBTA312B series B and C12 A Three-quadrant triacs high commutationRev. 01 — 12 April 2007Product data sheetI Very high commutation performance maximized at each gate sensitivityI High immunity to dV/dtI High power motor control -e.g.washing machines, vacuum cleanersI Non-linear rectifier-fed motor loads I Refrigeration and air conditioning compressorsI Electronic thermostats I V DRM ≤600V (BT A312B-600B/C)I I GT ≤50mA (BTA312B series B)I V DRM ≤800V (BT A312B-800B/C)I I GT ≤35mA (BTA312B series C)I I TSM ≤95A (t =20ms)I I T(RMS)≤12ATable 1.PinningPin Description Simplified outline Symbol1main terminal 1 (T1)SOT404 (D2PAK)2main terminal 2 (T2)3gate (G)mbmounting base; main terminal 2 (T2)mb132sym051T1GT23.Ordering information4.Limiting values[1]Although not recommended,off-state voltages up to 800V may be applied without damage,but the triac may switch to the on-state.The rate of rise of current should not exceed 15A/µs.Table 2.Ordering informationType numberPackage NameDescriptionVersionBT A312B-600B D2P AKplastic single-ended surface-mounted package (D2P AK);3-leads (one lead cropped)SOT404BT A312B-600C BT A312B-800B BT A312B-800CTable 3.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditionsMin Max Unit V DRM repetitive peak off-state voltage BTA312B-600B; BTA312B-600C [1]-600V BTA312B-800B; BTA312B-800C -800V I T(RMS)RMS on-state currentfull sine wave; T mb ≤101°C; see Figure 4 and 5-12AI TSMnon-repetitive peak on-state currentfull sine wave; T j =25°C prior to surge; see Figure 2 and 3t = 20 ms -95A t = 16.7 ms-105A I 2t I 2t for fusingt = 10 ms-45A 2s dI T /dt rate of rise of on-state current I TM =20A; I G =0.2A;dI G /dt =0.2A/µs-100A/µs I GM peak gate current -2A P GM peak gate power -5W P G(AV)average gate power over any 20ms period -0.5W T stg storage temperature −40+150°C T jjunction temperature-125°Cα=conduction angleFig 1.Total power dissipation as a function of RMS on-state current; maximum valuesf =50HzFig 2.Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues003aab690481216036912I T(RMS) (A)P tot (W)α = 180°120°90°60°30°conduction angle (degrees)form factor a 30609012018042.82.21.91.57α003aab680020406080100 110102103number of cycles (n)I TSM (A)I TSM tI T T j(init) = 25 °C max1/ft p ≤20ms (1)dI T /dt limitFig 3.Non-repetitive peak on-state current as a function of pulse duration; maximum valuesf =50Hz T mb =101°CFig 4.RMS on-state current as a function of surgeduration; maximum values Fig 5.RMS on-state current as a function of mountingbase temperature; maximum values003aab6911010210310-510-410-310-210-1t p (s)I TSM (A)I TSM tI TT j(init) = 25 °C maxt p(1)003aab6870102030405010-210-11 10surge duration (s)I T(RMS)(A)003aab686051015-50050100150T mb (°C)I T(RMS)(A)5.Thermal characteristicsTable 4.Thermal characteristics Symbol ParameterConditionsMin Typ Max Unit R th(j-mb)thermal resistance from junction to mounting base half cycle; see Figure 6-- 2.0K/W full cycle; see Figure 6-- 1.5K/W R th(j-a)thermal resistance from junction to ambient mounted on a printed circuit board; minimumfootprint-55-K/W(1)Unidirectional (half cycle)(2)Bidirectional (full cycle)Fig 6.Transient thermal impedance from junction to mounting base as a function of pulse duration003aab77510−110−2110Z th(j-mb)(K/W)10−3t p (s)10−511010−110−210−410−3t pPt(1)(2)6.Static characteristics Table 5.Static characteristicsT j=25°C unless otherwise specified.Symbol Parameter Conditions BTA312B-600BBTA312B-800B BTA312B-600CBTA312B-800CUnitMin Typ Max Min Typ MaxI GT gate triggercurrent V D=12V; I T=0.1A; see Figure8T2+ G+2-502-35mA T2+ G−2-502-35mA T2− G−2-502-35mAI L latching current V D=12V; I GT=0.1A; see Figure10T2+ G+--60--50mAT2+ G−--90--60mAT2− G−--60--50mA I H holding current V D=12V; I GT=0.1A; see Figure11--60--35mA V T on-statevoltageI T=15A; see Figure9- 1.3 1.6- 1.3 1.6VV GT gate triggervoltage V D=12V; I T=0.1A; see Figure7-0.8 1.5-0.8 1.5V V D=400V; I T=0.1A; T j=125°C0.250.4-0.250.4-VI D off-state current V D=V DRM(max); T j=125°C-0.10.5-0.10.5mA7.Dynamic characteristicsTable 6.Dynamic characteristicsSymbol ParameterConditionsBTA312B-600B BTA312B-800B BTA312B-600C BTA312B-800CUnitMinTyp Max MinTyp Max dV D /dtrate of rise of off-state voltageV DM =0.67× V DRM(max); T j =125°C;exponential waveform; gate open circuit10002000-500--V/µsdI com /dt rate of change of commutating current V DM =400V; T j =125°C; I T(RMS)=12A;without snubber; gate open circuit 30--20--A/mst gtgate-controlled turn-on time I TM =20A; V D =V DRM(max); I G =0.1A;dI G /dt =5A/µs-2--2-µs(1)T2− G −(2)T2+ G −(3)T2+ G+Fig 7.Normalized gate trigger voltage as a function ofjunction temperature Fig 8.Normalized gate trigger current as a function ofjunction temperatureT j (°C)−50150100050001aab1010.81.21.60.4V GT V GT(25°C)T j (°C)−50150100050001aac6691230(1)(2)(3)I GT I GT(25°C)V o =1.127V R s =0.027Ω(1)T j = 125°C; typical values (2)T j = 125°C; maximum values (3)T j = 25°C; maximum valuesFig 9.On-state current as a function of on-statevoltageFig 10.Normalized latching current as a function ofjunction temperatureFig 11.Normalized holding current as a function of junction temperature003aab6781020304000.51 1.522.5V T (V)I T (A)(1)(2)(3)T j (°C)−50150100050001aab1001230I L I L(25°C)T j (°C)−50150100050001aab0991230I H I H(25°C)8.Package outlineFig 12.Package outline SOT404 (D2PAK)UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IECJEDECJEITAmmA 1D 1D max.E e L p H D Q c 2.542.602.2015.8014.802.902.10111.601.2010.309.704.504.101.401.270.850.600.640.46b DIMENSIONS (mm are the original dimensions) SOT4040 2.5 5 mmscalePlastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)SOT404e eEbD 1H DDQL pc A 1A132mounting base05-02-1106-03-169.Revision historyTable 7.Revision historyDocument ID Release date Data sheet status Change notice Supersedes BT A312B_SER_B_C_120070412Product data sheet--BT A312B_SER_B_C_1© NXP B.V . 2007. All rights reserved.Product data sheet Rev. 01 — 12 April 200711 of 1210.Legal information10.1Data sheet status[1]Please consult the most recently issued document before initiating or completing a design.[2]The term ‘short data sheet’ is explained in section “Definitions”.[3]The product status of device(s)described in this document may have changed since this document was published and may differ in case of multiple devices.The latest product status information is available on the Internet at URL .10.2DefinitionsDraft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequences of use of such information.Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s)and title.A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.10.3DisclaimersRight to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and without notice.This document supersedes and replaces all information supplied prior to the publication hereof.General —Information in this document is believed to be accurate andreliable.However,NXP Semiconductors does not give any representations or warranties,expressed or implied,as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.Suitability for use —NXP Semiconductors products are not designed,authorized or warranted to be suitable for use in medical, military, aircraft,space or life support equipment, nor in applications where failure ormalfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage.NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Limiting values —Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134)may cause permanent damage to the device.Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in theCharacteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale,as published at /profile/terms , including those pertaining to warranty,intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant,conveyance or implication of any license under any copyrights,patents or other industrial or intellectual property rights.10.4TrademarksNotice:All referenced brands,product names,service names and trademarks are the property of their respective owners.11.Contact informationFor additional information, please visit:For sales office addresses, send an email to:salesaddresses@Document status [1][2]Product status [3]DefinitionObjective [short] data sheet Development This document contains data from the objective specification for product development.Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.Product [short] data sheetProductionThis document contains the product specification.12.Contents1Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 11.1General description. . . . . . . . . . . . . . . . . . . . . . 11.2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4Quick reference data. . . . . . . . . . . . . . . . . . . . . 12Pinning information. . . . . . . . . . . . . . . . . . . . . . 13Ordering information. . . . . . . . . . . . . . . . . . . . . 24Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 25Thermal characteristics. . . . . . . . . . . . . . . . . . . 56Static characteristics. . . . . . . . . . . . . . . . . . . . . 67Dynamic characteristics . . . . . . . . . . . . . . . . . . 78Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 99Revision history. . . . . . . . . . . . . . . . . . . . . . . . 1010Legal information. . . . . . . . . . . . . . . . . . . . . . . 1110.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . 1110.2Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1110.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 1110.4T rademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 1111Contact information. . . . . . . . . . . . . . . . . . . . . 1112Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.© NXP B.V.2007.All rights reserved.For more information, please visit: For sales office addresses, please send an email to: salesaddresses@Date of release: 12 April 2007Document identifier: BTA312B_SER_B_C_1。

bat12 600b可控硅参数

bat12 600b可控硅参数

bat12 600b可控硅参数
摘要:
1.概述
2.可控硅参数详细说明
3.结论
正文:
1.概述
本文将为您介绍bat12 600b 可控硅的参数。

可控硅,全称为可控硅整流器,是一种半导体器件,具有电压、电流控制的功能。

在电子设备中,可控硅被广泛应用于交流电转换为直流电、逆变器、调压器等电路。

下面,我们将详细了解bat12 600b 可控硅的参数。

2.可控硅参数详细说明
bat12 600b 可控硅的具体参数如下:
- 型号:bat12
- 电流:600A
- 电压:1200V
- 功率:720W
- 开关速度:快速
- 控制方式:触发控制
此外,可控硅还有其他一些参数,如:
- 动态响应:快速
- 反向电压:Vrrm
- 正向电压:Vf
- 静态电流:Isc
- 触发角度:α
- 温度范围:-55℃~150℃
这些参数共同决定了可控硅的性能和使用范围。

在选择可控硅时,需要根据实际应用场景和要求,选择合适的参数。

3.结论
bat12 600b 可控硅是一种具有600A 电流、1200V 电压和720W 功率的半导体器件。

在电子设备中,可控硅可以实现交流电转换为直流电、逆变器、调压器等功能。

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BTB12−600TW3G
Symbol
VDRM IDRM VRRM IRRM VTM IH
Voltage Current Characteristic of Triacs (Bidirectional Device)
+ Current
Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current
(dI/dt)c
1.75

dI/dt


dV/dt
10

Max Unit
mA 0.005
1.0
1.55
V
mA 5.0 5.0 5.0
10
mA
mA 15 15 15
V 1.3 1.3 1.3
V − − −

A/ms
45
A/ms

V/ms
/
2
Circuit Fusing Consideration (t = 8.3 ms)
IT(RMS) ITSM I2t
12
A
126
A
66
A2sec
Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10ms)
VDSM/ VDSM/VRSM
V
VRSM
+100
Peak Gate Current (TJ = 110°C, t = 20 ms) IGM
4.0
A
Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C)
PGM
20
W
Average Gate Power (TJ = 110°C)
PG(AV)
+
(+) MT2
(+) MT2
Quadrant II IGT −
(−) IGT GATE
MT1
REF
(−) MT2
(+) IGT GATE
MT1
REF
(−) MT2
Quadrant I + IGT
Quadrant III
(−) IGT GATE
MT1
REF
(+) IGT GATE
MT1
REF
Quadrant IV
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
BTB12−600TW3G TO−220AB 50 Units / Rail (Pb−Free)
© Semiconductor Components Industries, LLC, 2008
IRRM at VRRM
on state
IH
Quadrant 3 MainTerminal 2 −
VTM
VTM IH off state
Quadrant 1 MainTerminal 2 +
+ Voltage IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE (Positive Half Cycle)
VTM


IGT
1.2

1.2

1.2

Holding Current (VD = 12 V, Gate Open, Initiating Current = ±100 mA)
Latching Current (VD = 12 V, IG = 7.5 mA) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−)
− MT2 NEGATIVE (Negative Half Cycle)
All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used.
VRRM
50 to 60 Hz, Gate Open)
BTB12−600TW3G
600
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C)
Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C)
October, 2008 − Rev. 0
/
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
BTB12-600TW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
Features
• Blocking Voltage to 600 V • On-State Current Rating of 12 A RMS at 80°C • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dV/dt − 10 V/ms minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating dI/dt − 1.75 A/ms minimum at 110°C • These are Pb−Free Devices
Critical Rate of Rise of Off-State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
IH


IL






Gate Trigger Voltage (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−)
VGT
0.5

0.5

0.5

Gate Non−Trigger Voltage (TJ = 110°C) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−)
1.0
W
Operating Junction Temperature Range
TJ
−40 to +110 °C
Storage Temperature Range
Tstg −40 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
Symbol
RqJC RqJA
TL
Value
1.8 60
260
Unit °C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
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