POWER SUPPLY TOPOLOGIES

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柔性直流输电换流阀型式试验补能电源研究

2020年第1期 37柔性直流输电换流阀型式试验补能电源研究熊银武1 钟昆禹1 王林1 姬奎江1 王国强2（1. 南方电网超高压输电公司天生桥局，贵州兴义 562400； 2. 荣信汇科电气技术有限责任公司，辽宁鞍山 114051）摘要本文针对柔性直流输电换流阀型式试验补能电源开展研究，根据现有柔性直流输电工程功率模块可能的电压运行等级，对柔直阀段对拖运行试验回路的3种补能电源拓扑的谐波特性进行仿真。

仿真结果表明，采用12脉波晶闸管整流桥拓扑主要含有11次谐波，所需滤波装置容量较小，可不配置滤波器，设备总体性价比较高，适合作为阀段型式试验的补能电源。

关键词：柔性直流输电；型式试验；补能电源；谐波Research on power supply for type test of voltage source converter basedhigh voltage direct current transmission converterXiong Yinwu 1 Zhong Kunyu 1 Wang Lin 1 Ji Kuijiang 1 Wang Guoqiang 2(1. Southern Power Grid Co., Ltd, Tianshengqiao Bureau of EHV Transmission Company,Xingyi, Guizhou 562400;2. Rongxin Huiko Electric Technology Co., Ltd, Anshan, Liaoning 114051)Abstract Research on the type test of power supply for voltage source converter based high voltage direct current transmission (VSC-HVDC) converter valve. According to the possible operation voltage of power module in VSC-HVDC engineering, the harmonic characteristics of the three topologies of power supply for converter valve section running test are analyzed by simulation. The simulation results show that the topology of 12-pulse thyristor rectifier bridge mainly contains 11th harmonics. Small filter capacity is required, and there is no need to configure the filter separately. The overall cost performance is satisfactory, and it is suitable for power supply of the valve type test.Keywords ：voltage source converter based high voltage direct current transmission (VSC-HVDC); type test; power supply; harmonic基于模块化多电平变流器（modular multilevel converter, MMC ）的柔性直流输电（voltage source converter based high voltage direct current transmi- ssion, VSC-HVDC ）技术已在实际工程中广泛应用。

整理翻译

channel charge injection 沟道电荷注入
channel-length modulation 沟道效应
phase-locked loop 锁相环 phase/frequency detector 鉴相鉴频器
guard ring 保护环 switched-capacitor开关电容
negative 负的 positive 正的 frequency characteristics频率特性
sub-harmonic 分频谐波，次谐波 in series with串联
equivalent resistor value等价电阻值 biased偏压
phase margin 相位裕度 pinch-off behavior夹断特性 pole 极点 node结点
dominant poles 主极点 inant poles 非主极点 power spectral density
功率谱密度 power supply rejection 电源抑制
current mode control 电流模式控制
slope compensation斜率补偿 signal flow graph信号流图
fixed frequency固定频率
trailing edge modulation 后延调变（下降边）
feedforwards term 前馈控制（正反馈控制）
back-end processing 后端工艺 ringing 减幅震荡 ripple波纹
second-order effects 二级效应 shadowing 阴影 sheet resistance 薄层电阻 silicide 硅化物 skew偏移 slew rate 转换速率 spacers 隔离墙

Adapter report

FCC Class A VDE-0871/A,C VDE-0871/B FCC Class B
0.01
0.1
1.0 10 Frequency ,MHz
100
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Chapter4.整流濾波電圖--基本工作原理图
一.整流电路基本工作原理:
1.全波橋式整流路徑:
桥式整流电路
2. 桥式整流电路输出波形
缺點: (1). 体積大,效率低.
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Chapter1 Overview Of Power Topologies 二. The off-line PWM Switching Power Supply
( 一）. Block diagram
优缺點.
AC input
EMI濾波電路
优點: (1).Greater efficiency (2).Smaller size and less weight (3). Input range wide (90vac~264vac)
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Chapter 3.EMI( Emission)電圖
电磁干扰类别：
Conduction / Radiation
EMI Standard
1.雜訊的單位:
Vnoise dBV 20log( ) 1V
2.Conduction:
FCC:美國的標準，自450KHz至30MHz CISPR 22.2 的標準，自150KHz至30MHz Under 6dB：在生產時會有元件的誤差存在，因此目前一般設計上都保留6dBuV的容忍度， 1 V 1 2 0d BV 而以Under 6dB 曲線作為設計的標準。
(2). PFM-脈衝頻率調制:指脈衝寬度ton恆度，通過改變開關工作頻率F(=1/T) 來改變占空此的方式．

IRG4PF50W中文资料

Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. 160 19 53 29 26 110 150 0.19 1.06 1.25 28 26 280 90 3.45 13 3300 200 45 Max. Units Conditions 240 IC = 28A 29 nC VCC = 400V See Fig. 8 80 VGE = 15V ––– ––– TJ = 25°C ns 170 IC = 28A, VCC = 720V 220 VGE = 15V, RG = 5.0Ω ––– Energy losses include "tail" ––– mJ See Fig. 10, 11, 13, 14 1.7 ––– TJ = 150°C, ––– IC = 28A, VCC = 720V ns ––– VGE = 15V, RG = 5.0Ω ––– Energy losses include "tail" ––– mJ See Fig. 13, 14 ––– nH Measured 5mm from package ––– VGE = 0V ––– pF VCC = 30V See Fig. 7 ––– ƒ = 1.0MHz

MIC4104中文资料

MIC4103/4104100V Half Bridge MOSFET Drivers 3/2A Sinking/Sourcing CurrentPRELIMINARYMLF and Micro Lead Frame is a registered trademark of Amkor Technologies, Inc.Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel +1 (408) 944-0800 • fax + 1 (408) 474-1000 • General DescriptionThe MIC4103 and MIC4104 are high frequency, 100V Half Bridge MOSFET drivers with faster turn-off characteristics than the MIC4100 and MIC4101 drivers. They feature fast 24ns propagation delay times and 6ns driver fall times. The low-side and high-side gate drivers are independently controlled and matched to within 3ns typical. The MIC4103 has CMOS input thresholds and the MIC4104 has TTL input thresholds. The MIC4103/4 include a high voltage internal diode that charges the high-side gate drive bootstrap capacitor.A robust, high-speed, and low power level shifter provides clean level transitions to the high side output. The robust operation of the MIC4103/4 ensures the outputs are not affected by supply glitches, HS ringing below ground, or HS slewing with high speed voltage transitions. Under-voltage protection is provided on both the low-side and high-side drivers.The MIC4103 and MIC4104 are available in an 8-pin SOIC and 8-pin 3mm × 3mm MLF ® package with a operating junction temperature range of –40°C to +125°C.Data sheets and support documentation can be found on Micrel’s web site at: .Features• Asymmetrical, low impedance outputs drive 1000pF load with 10ns rise times and 6ns fall times • Bootstrap supply max voltage to 118V DC • Supply voltage up to 16V• Drives high- and low-side N-Channel MOSFETs with independent inputs• CMOS input thresholds (MIC4103) • TTL input thresholds (MIC4104) • On-chip bootstrap diode• Fast 24ns propagation times • Low power consumption• Supply under-voltage protection • Typical 2.5Ω pull up and 1.25Ω pull down output driver resistance• –40°C to +125°C junction temperature rangeApplications• High voltage buck converters• Full- and half-bridge power topologies • Active clamp forward converter • Two switch forward topologies • Interface to digital controllers___________________________________________________________________________________________________________Typical Application100V Buck Regulator SolutionOrdering InformationPart Number Input Junction Temp. RangePackage MIC4103YM CMOS –40° to +125°C 8-Pin SOIC MIC4104YMTTL –40° to +125°C 8-Pin SOIC MIC4103YML (coming soon) CMOS –40° to +125°C 8-Pin 3x3 MLF ® MIC4104YML (coming soon)TTL–40° to +125°C8-Pin 3x3 MLF ®Pin Configuration8-Pin SOIC (M)8-Pin 3mm × 3mm MLF ® (ML)Pin DescriptionPin NumberPin NamePin Function1 VDDPositive Supply to lower gate drivers. Decouple this pin to VSS (Pin 7). Bootstrap diode connected to HB (pin 2). 2 HBHigh-Side Bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to this pin. Bootstrap diode is on-chip. 3HOHigh-Side Output. Connect to gate of High-Side power MOSFET.4 HSHigh-Side Source connection. Connect to source of High-Side power MOSFET. Connect negative side of bootstrap capacitor to this pin. 5 HI High-Side input.6 LI Low-Side input.7 VSS Chip negative supply, generally will be ground. 8LOLow-Side Output. Connect to gate of Low-Side power MOSFET.Absolute Maximum Ratings(1)Supply Voltage (V DD, V HB – V HS)......................-0.3V to 18V Input Voltages (V LI, V HI).........................-0.3V to V DD + 0.3V Voltage on LO (V LO)..............................-0.3V to V DD + 0.3V Voltage on HO (V HO)......................V HS - 0.3V to V HB + 0.3V Voltage on HS (continuous)..............................-1V to 110V Voltage on HB.. (118V)Average Current in VDD to HB Diode.......................100mA Junction Temperature (T J)........................–55°C to +150°C Storage Temperature (T s)..........................-60°C to +150°C ESD Rating..........................................................See note 3 Operating Ratings(2)Supply Voltage (V DD)........................................+9V to +16V Voltage on HS...................................................-1V to 100V Voltage on HS (repetitive transient)..................-5V to 105V HS Slew Rate............................................................50V/ns Voltage on HB...................................V HS + 8V to V HS + 16V and............................................V DD - 1V to V DD + 100V Junction Temperature (T J)........................–40°C to +125°C Junction Thermal ResistanceSOIC-8L(θJA)...................................................140°C/W 3mm × 3mm MLF®............................................tbd°C/WElectrical Characteristics(4)V DD = V HB = 12V; V SS = V HS = 0V; No load on LO or HO; T A = 25°C; unless noted. Bold values indicate –40°C< T J < +125°C.Symbol Parameter Condition Min Typ Max Units Supply CurrentI DD V DD Quiescent Current LI = HI = 0V 40 150200µAI DDO V DD Operating Current f = 500kHz 3.0 4.0 mAI HB Total HB Quiescent Current LI = HI = 0V 25 150200µAI HBO Total HB Operating Current f = 500kHz 1.5 2.53mAI HBS HB to V SS Current, Quiescent V HS = V HB = 110V 0.05 130µAInput Pins: MIC4103 (CMOS Input )V IL Low Level Input VoltageThreshold435.3VV IH High Level Input VoltageThreshold5.778VV IHYS InputVoltageHysteresis 0.4 V R I Input Pulldown Resistance 100 200 500 kΩInput Pins: MIC4104 (TTL Input )V IL Low Level Input VoltageThreshold0.8 1.5 VV IH High Level Input VoltageThreshold1.52.2 VR I Input Pulldown Resistance 100 200 500 kΩUnder Voltage ProtectionV DDR V DD Rising Threshold 6.5 7.4 8.0 VV DDH V DD ThresholdHysteresis 0.5 V V HBR HB Rising Threshold 6.0 7.0 8.0 VV HBH HBThresholdHysteresis 0.4 VSymbol Parameter Condition Min Typ Max Units Bootstrap DiodeV DL Low-Current Forward Voltage I VDD-HB = 100µA 0.4 0.550.70VV DH High-Current Forward Voltage I VDD-HB = 100mA 0.7 0.81.0VR D DynamicResistance I VDD-HB = 100mA 1.0 1.52.0ΩLO Gate DriverV OLL Low Level Output Voltage I LO = 160mA 0.18 0.30.4VV OHL High Level Output Voltage I LO = -100mA, V OHL = V DD - V LO 0.25 0.30.45VI OHL Peak Sink Current V LO = 0V 3 A I OLL Peak Source Current V LO = 12V 2 A HO Gate DriverV OLH Low Level Output Voltage I HO = 160mA 0.22 0.30.4VV OHH High Level Output Voltage I HO = -100mA, V OHH = V HB – V HO 0.25 0.30.45VI OHH Peak Sink Current V HO = 0V 3 A I OLH Peak Source Current V HO = 12V 2 A Switching Specificationst LPHL Lower Turn-Off PropagationDelay (LI Falling to LO Falling)(MIC4103)2445 nst HPHL Upper Turn-Off PropagationDelay (HI Falling to HO Falling)(MIC4103)2445 nst LPLH Lower Turn-On PropagationDelay (LI Rising to LO Rising)(MIC4103)2445 nst HPLH Upper Turn-On PropagationDelay (HI Rising to HO Rising)(MIC4103)2445 nst LPHL Lower Turn-Off PropagationDelay (LI Falling to LO Falling)(MIC4104)2445 nst HPHL Upper Turn-Off PropagationDelay (HI Falling to HO Falling)(MIC4104) 24 45 nst LPLH Lower Turn-On PropagationDelay (LI Rising to LO Rising)(MIC4104) 24 45 nst HPLH Upper Turn-On PropagationDelay (HI Rising to HO Rising)(MIC4104) 24 45 nst MON Delay Matching: Lower Turn-Onand Upper Turn-Off3 810nst MOFF Delay Matching: Lower Turn-Offand Upper Turn-On3 810nst RC Output Rise Time C L = 1000pF 10 ns t FC Output Fall Time C L = 1000pF 6 nsSymbol Parameter Condition Min Typ Max Units Switching Specifications (cont.)t R Output Rise Time (3V to 9V) C L = 0.1µF 0.4 0.60.8µst F Output Fall Time (3V to 9V) C L = 0.1µF 0.2 0.30.4µst PW Minimum Input Pulse Width thatChanges the OutputNote 6 50 nst BS Bootstrap Diode Turn-On orTurn-Off Time10 nsNotes:1. Exceeding the absolute maximum rating may damage the device.2. The device is not guaranteed to function outside its operating rating.3. Devices are ESD sensitive. Handling precautions recommended. Human body model, 1.5kΩ in series with 100pF.4. Specification for packaged product only.5. All voltages relative to pin 7, V SS unless otherwise specified6. Guaranteed by design. Not production tested.Timing DiagramsNote: All propagation delays are measured from the 50% voltage level.Functional CharacteristicsFigure 1. MIC4103/4 Functional Block DiagramFunctional DescriptionThe MIC4103 is a high voltage, non-inverting, dual MOSFET driver that is designed to independently drive both high-side and low-side N-Channel MOSFETs. The block diagram of the MIC4103 is shown in Figure 1. Both drivers contain an input buffer with hysteresis, a UVLO circuit and an output buffer. The high-side output buffer includes a high speed level-shifting circuit that is referenced to the HS pin. An internal diode is used as part of a bootstrap circuit to provide the drive voltage for the high-side output.Startup and UVLOThe UVLO circuit forces the driver output low until the supply voltage exceeds the UVLO threshold. The low-side UVLO circuit, monitors the voltage between the VDD and VSS pins. The high-side UVLO circuit monitors the voltage between the HB and HS pins. Hysteresis in the UVLO circuit prevents noise and finite circuit impedance from causing chatter during turn-on.Input StageThe MIC4103 and MIC4104 have different input stages, which lets these parts cover a wide range of driver applications. Both the HI and LI pins are referenced to the VSS pin.The MIC4103 has a high impedance, CMOS compatible input threshold and is recommended for applications where the input signal is noisy or where the input signal swings the full range of voltage (from V DD to GND). There is typically 400mV of hysteresis on the input pins throughout the VDD range. The hysteresis improves noise immunity and prevents input signals with slow rise times from falsely triggering the output. The threshold voltage of the MIC4103 varies proportionally with the VDD supply voltage.The amplitude of the input signal affects the VDD supply current. Vin voltages that are a diode drop less than the VDD supply voltage will cause an increase in the VDD pin current. The graph in Figure 2 shows the typical dependence between I VDDand Vin for Vdd=12V.Figure 2. MIC4103 Supply Current vs. Input VoltageThe MIC4104 has a TTL compatible input range and is recommended for use with inputs signals whose amplitude is less than the supply voltage. The threshold level is independent of the VDD supply voltage and there is no dependence between I VDD and the input signal amplitude with the MIC4104. This feature makes the MIC4104 an excellent level translator that will drive high threshold MOSFETs from a low voltage PWM IC.Low-Side DriverA block diagram of the low-side driver is shown in Figure 3. The low-side driver is designed to drive a ground (V SS pin) referenced N-channel MOSFET. Low driverimpedances allow the external MOSFET to be turned onand off quickly. The rail-to-rail drive capability of the outputensures full enhancement of the external MOSFET.A high level applied to LI pin causes the upper driver FET to turn on and V DD voltage is applied to the gate of the external MOSFET. A low level on the LI pin turns off the upper driver and turns on the low side driver to ground the gate of the external MOSFET.VddExternalFETFigure 3. Low-Side Driver Block DiagramHigh-Side Driver and Bootstrap CircuitA block diagram of the high-side driver and bootstrap circuit is shown in Figure 4. This driver is designed to drive a floating N-channel MOSFET, whose source terminal is referenced to the HS pin.Figure 4. High-Side Driver and Bootstrap Circuit Block Diagram A low power, high speed, level shifting circuit isolates the low side (VSS pin) referenced circuitry from the high-side (HS pin) referenced driver. Power to the high-side driver and UVLO circuit is supplied by the bootstrap circuit whilethe voltage level of the HS pin is shifted high. The bootstrap circuit consists of an internal diode and external capacitor, C B . In a typical application, such as the synchronous buck converter shown in Figure 5, the HS pin is at ground potential while the low-side MOSFET is on. The internal diode allows capacitor C B to charge up to V DD -V D during this time (where V D is the forward voltage drop of the internal diode). After the low-side MOSFET is turned off and the HO pin turns on, the voltage across capacitor C B is applied to the gate of the upper external MOSFET. As the upper MOSFET turns on, voltage on the HS pin rises with the source of the high-side MOSFET until it reaches V IN . As the HS and HB pin rise, the internal diode is reverse biased preventing capacitor C B from discharging.Figure 5. High-Side Driver and Bootstrap CircuitApplication InformationPower Dissipation ConsiderationsPower dissipation in the driver can be separated into three areas:• Internal diode dissipation in the bootstrap circuit •Internal driver dissipation• Quiescent current dissipation used to supply theinternal logic and control functions. Bootstrap Circuit Power DissipationPower dissipation of the internal bootstrap diode primarily comes from the average charging current of the C B capacitor times the forward voltage drop of the diode. Secondary sources of diode power dissipation are the reverse leakage current and reverse recovery effects of the diode.The average current drawn by repeated charging of the high-side MOSFET is calculated by:frequencyswitching drive gate V at Charge Gate Total Q :where HB gate )(==×=S Sgate AVE F f f Q I The average power dissipated by the forward voltage drop of the diode equals:dropvoltage forward Diode V :where F )(=×=FAVE F fwd V I PdiodeThe value of V F should be taken at the peak current through the diode, however, this current is difficult to calculate because of differences in source impedances. The peak current can either be measured or the value of V F at the average current can be used and will yield a good approximation of diode power dissipation.The reverse leakage current of the internal bootstrap diode is typically 11µA at a reverse voltage of 100V and 125°C. Power dissipation due to reverse leakage is typically much less than 1mW and can be ignored.Reverse recovery time is the time required for the injected minority carriers to be swept away from the depletion region during turn-off of the diode. Power dissipation due to reverse recovery can be calculated by computing the average reverse current due to reverse recovery charge times the reverse voltage across the diode. The average reverse current and power dissipation due to reverse recovery can be estimated by:TimeRecovery Reverse t Current Recovery Reverse Peak I :where 5.0rr RRM )()(==×=×××=REVAVE RR RR S rr RRM AVE RR V I Pdiode f t I IThe total diode power dissipation is:RR fwd total Pdiode Pdiode Pdiode +=An optional external bootstrap diode may be used instead of the internal diode (Figure 6). An external diode may be useful if high gate charge MOSFETs are being driven and the power dissipation of the internal diode is contributing to excessive die temperatures. The voltage drop of the external diode must be less than the internal diode for this option to work. The reverse voltage across the diode will be equal to the input voltage minus the V DD supply voltage. A 100V Schottky diode will work for most 72Vinput telecom applications. The above equations can be used to calculate power dissipation in the external diode, however, if the external diode has significant reverse leakage current, the power dissipated in that diode due to reverse leakage can be calculated as:supply power the of frequency switching fs /t Cycle Duty D Voltage Reverse Diode V T and V at flow current Reverse I :where )1(ON REV J REV R =====−××=SREV R REV f D V I PdiodeThe on-time is the time the high-side switch is conducting. In most power supply topologies, the diode is reverse biased during the switching cycle off-time.HI LIFigure 6. Optional Bootstrap DiodeGate Driver Power DissipationPower dissipation in the output driver stage is mainly caused by charging and discharging the gate to sourceand gate to drain capacitance of the external MOSFET. Figure 7 shows a simplified equivalent circuit of the MIC4103 driving an external MOSFET.C BFigure 7. MIC4103 Driving an External MOSFET Dissipation during the external MOSFET Turn-OnEnergy from capacitor C B is used to charge up the input capacitance of the MOSFET (C GD and C GS ). The energy delivered to the MOSFET is dissipated in the three resistive components, R ON , R G , and R G_FET . R ON is the on resistance of the upper driver MOSFET in the MIC4103. R G is the series resistor (if any) between the driver IC and the MOSFET. R G_FET is the gate resistance of the MOSFET. R G_FET is usually listed in the power MOSFET’s specifications. The ESR of capacitor C B and the resistance of the connecting trace can be ignored since they are much less than R ON and R G_FET .The effective capacitance of C GD and C GS is difficult to calculate since they vary non-linearly with I D , V GS , and V DS . Fortunately, most power MOSFET specifications include a typical graph of total gate charge vs. V GS . Figure 8 shows a typical gate charge curve for an arbitrary power MOSFET. This chart shows that for a gate voltage of 10V, the MOSFET requires about 23.5nC of charge. The energy dissipated by the resistive components of the gate drive circuit during turn-on is calculated as:MOSFETthe of e capacitancgate total the is Ciss Qg 1/2E soV C Q but 221whereV V Ciss E gs gs ××=×=××=Figure 8. Typical Gate Charge vs. V GSThe same energy is dissipated by R OFF , R G , and R G_FET when the driver IC turns the MOSFET off. Assuming R ON is approximately equal to Roff, the total energy and power dissipated by the resistive drive elements is:circuitdrive gate the of frequency switching the is fs MOSFET the on voltage source to gate the is V Vgsat charge gate total the is Q off and on MOSFET the switching by dissipated power the is P cycleswitching per dissipated energy the is E Q Q E GS G driver driver G G driver wherefsV P andV GS driver GS ××=×=The power dissipated inside the MIC4103/4 is equal to the ratio of R ON & R OFF to the external resistive losses in R G and R G_FET . Letting R ON =R OFF , the power dissipated in the MIC4103 due to driving the external MOSFET is:FETG G ONONdriverdrive R R R R P Pdiss _++=Supply Current Power DissipationPower is dissipated in the MIC4103 even if there is nothing being driven. The supply current is drawn by the bias for the internal circuitry, the level shifting circuitry, and shoot-through current in the output drivers. The supply current is proportional to operating frequency and the V DD and V HB voltages. The typical characteristic graphs show how supply current varies with switching frequency and supply voltage.The power dissipated by the MIC4103 due to supply current is:HB HB DD DD I V I V Pdiss ×+×=ply supTotal power dissipation and Thermal Considerations Total power dissipation in the MIC4103 or MIC4104 is equal to the power dissipation caused by driving the external MOSFETs, the supply current, and the internal bootstrap diode.total drive total Pdiode Pdiss Pdiss Pdiss ++=supplyThe die temperature may be calculated once the total power dissipation is known.JA total A J Pdiss T T θ×+=C/W)( air ambient to junction from resistance thermal the is θMIC4103/4the of n dissipatio power the is Pdiss C)( e temperatur junction the is T e temperatur ambient maximum the is T :JC total J A °°wherePropagation Delay and Delay Matching and other Timing ConsiderationsPropagation delay and signal timing is an important consideration in a high performance power supply. The MIC4103 is designed not only to minimize propagation delay but to minimize the mismatch in delay between the high-side and low-side drivers.Fast propagation delay between the input and output drive waveform is desirable. It improves overcurrent protection by decreasing the response time between the control signal and the MOSFET gate drive. Minimizing propagation delay also minimizes phase shift errors in power supplies with wide bandwidth control loops.Many power supply topologies use two switching MOSFETs operating 180º out of phase from each other. These MOSFETs must not be on at the same time or a short circuit will occur, causing high peak currents and higher power dissipation in the MOSFETs. The MIC4103 and MIC4104 output gate drivers are not designed with anti-shoot-through protection circuitry. The output drive signals simply follow the inputs. The power supply design must include timing delays (dead-time) between the input signals to prevent shoot-through. The MIC4103 & MIC4104 drivers specify delay matching between the two drivers to help improve power supply performance byreducing the amount of dead-time required between theinput signals. Care must be taken to insure the input signal pulse width is greater than the minimum specified pulse width. Aninput signal that is less than the minimum pulse width mayresult in no output pulse or an output pulse whose width is significantly less than the input. The maximum duty cycle (ratio of high side on-time to switching period) is controlled by the minimum pulse widthof the low side and by the time required for the C Bcapacitor to charge during the off-time. Adequate time must be allowed for the C B capacitor to charge up before the high-side driver is turned on.Decoupling and Bootstrap Capacitor SelectionDecoupling capacitors are required for both the low side (Vdd) and high side (HB) supply pins. These capacitors supply the charge necessary to drive the external MOSFETs as well as minimize the voltage ripple on these pins. The capacitor from HB to HS serves double duty by providing decoupling for the high-side circuitry as well as providing current to the high-side circuit while the high-side external MOSFET is on. Ceramic capacitors are recommended because of their low impedance and small size. Z5U type ceramic capacitor dielectrics are not recommended due to the large change in capacitance over temperature and voltage. A minimum value of 0.1uf is required for each of the capacitors, regardless of the MOSFETs being driven. Larger MOSFETs may require larger capacitance values for proper operation. The voltage rating of the capacitors depends on the supply voltage, ambient temperature, and the voltage derating used for reliability. 25V rated X5R or X7R ceramic capacitors are recommended for most applications. The minimum capacitance value should be increased if low voltage capacitors are used since even good quality dielectric capacitors, such as X5R, will lose 40% to 70% of their capacitance value at the rated voltage.Placement of the decoupling capacitors is critical. The bypass capacitor for Vdd should be placed as close as possible between the Vdd and Vss pins. The bootstrap capacitor (C B ) for the HB supply pin must be located as close as possible between the HB and HS pins. The traceconnections must be short, wide, and direct. The use of a ground plane to minimize connection impedance is recommended. Refer to the section on layout and component placement for more information.The voltage on the bootstrap capacitor drops each time it delivers charge to turn on the MOSFET. The voltage drop depends on the gate charge required by the MOSFET. Most MOSFET specifications specify gate charge vs. Vgs voltage. Based on this information and a recommended ∆V HB of less than 0.1V, the minimum value of bootstrap capacitance is calculated as: pinHB the at drop Voltage ∆ V at Charge Gate Total Q :where HB HB gate ==∆≥HB gate B V Q C The decoupling capacitor for the Vdd input may be calculated with the same formula, however, the twocapacitors are usually equal in value.Grounding, Component Placement, and Circuit LayoutNanosecond switching speeds and ampere peak currentsin and around the MIC4103 and MIC4104 drivers require proper placement and trace routing of all components. Improper placement may cause degraded noise immunity, false switching, excessive ringing or circuit latch-up.Figure 9 shows the critical current paths when the driver outputs go high and turn on the external MOSFETs. It alsohelps demonstrate the need for a low impedance ground plane. Charge needed to turn-on the MOSFET gates comes from the decoupling capacitors C VDD and C B. Current in the low-side gate driver flows from C VDD through the internal driver, into the MOSFET gate and out the Source. The return connection back to the decoupling capacitor is made through the ground plane. Any inductance or resistance in the ground return path causes a voltage spike or ringing to appear on the source of the MOSFET. This voltage works against the gate drive voltage and can either slow down or turn off the MOSFET during the period where it should be turned on.Current in the high-side driver is sourced from capacitor C B and flows into the HB pin and out the HO pin, into the gate of the high side MOSFET. The return path for the current is from the source of the MOSFET and back to capacitor C B. The high-side circuit return path usually does not have a low impedance ground plane so the trace connections in this critical path should be short and wide to minimize parasitic inductance. As with the low-side circuit, impedance between the MOSFET source and the decoupling capacitor causes negative voltage feedback which fights the turn-on of the MOSFET.It is important to note that capacitor CB must be placed close to the HB and HS pins. This capacitor not only provides all the energy for turn-on but it must also keep HB pin noise and ripple low for proper operation of the high-side drive circuitry.Low-side drive turn-onFigure 9. Turn-On Current PathsFigure 10 shows the critical current paths when the driver outputs go low and turn off the external MOSFETs. Short, low impedance connections are important during turn-off for the same reasons given in the turn-on explanation. Remember that during turn-off current flowing through the internal diode replenishes charge in the bootstrap capacitor, CB.Figure 10. Turn-Off Current PathsThe following circuit guidelines should be adhered to for optimum circuit performance:1. The V DD and HB bypass capacitors must beplaced close to the supply and ground pins. It iscritical that the trace length between the high sidedecoupling capacitor (C B) and the HB & HS pinsbe minimized to reduce trace inductance.2. A ground plane should be used to minimizeparasitic inductance and impedance of the returnpaths. The MIC4103 is capable of greater than 2Apeak currents and any impedance between theMIC4103, the decoupling capacitors, and theexternal MOSFET will degrade the performance ofthe driver.3. Trace out the high di/dt and dv/dt paths, as shownin Figures 9 and 10 and minimize trace length andloop area for these connections. Minimizing theseparameters decreases the parasitic inductanceand the radiated EMI generated by fast rise andfall times.。

电源拓扑结构

Power Supply Topologiesreliable operation follow recommendations indatasheets and application notes.**Go to: and place literature number in the “Key Word”box.For SEM topics,go to:/seminarsThe Floating bar is a trademark of Texas Instruments.©2008Texas Instruments Incorporated.Printed in the U.S.A.Printed on recycled paper.SLUW001D Application Notes:**Understanding Buck Power Stages in Switchmode Power Supplies (SLVA057)Controllers/Converters:TPS40020/21TPS40180TPS40007/09TPS40192/3TPS40040/41TPS40200TPS40075TPS5410/20/30/50TPS40077TPS54350/550TPS40140TPS62110Application Notes:**Understanding Boost Power Stages in Switchmode Power Supplies (SLVA061)High Voltage Power Supply Using aHighly Integrated DC/DC Converter (SLVA137)Controllers/Converters:TPS40210/11UCC28070TPS61080UCC28220/21TPS61030UCC38C42TPS61100UCC3800TPS61200UCC38050/51(PFC)UCC28060(PFC)UCC3817A/18A (PFC)UCC28061UCC3809-1Application Notes:**Understanding Buck-Boost Power Stages in Switchmode Power Supplies (SLVA059A)Controllers/Converters:TPS40200UC3572TPS40061UCC3801/01/02/03/04/05TPS40057UCC3807TPS5410/20/30/50UCC3810(Dual)TPS54350/54550UCC3813TPS63700UCC38C40/41/42/43/45Application Notes:**Versatile Low Power SEPIC ConverterAccepts Wide Input Voltage Range (SLUA158)High Power Factor Preregulator Using the SEPIC Converter (SEM900)Controllers/Converters:TPS43000UCC3807TPS61130UCC3810(Dual)UCC38C40/41/42/43/44/45UCC3800/01/02/03/04/05/3813Application Notes:**Design of Flyback Transformers and Inductors (SEM400)Discontinuous Current Flyback Converter Design (SEM300)Controllers:TPS23750/70(PoE)UCC35705/706UC3807UCC3800/01/02/03/04/05/3813UCC28220/21UCC3809UCC28600(Green Mode)UCC3810(Dual)UCC3570UCC38C40/41/42/43/44/45UCC35701/702Application Notes:**25-W Forward Converter Design Review (SLUA276)Multiple Output Forward Converter Design (SEM1200)Controllers:UCC28220/21UCC3807UCC3570UCC3809UCC35701/702UCC3810(Dual)UCC35705/706UCC38C40/41/42/43/44/45UCC3800/01/02/03/04/05/3813Application Notes:**150-W Off-Line Forward Converter Design Review (SEM400)Practical Considerations in Current Mode Power Supplies (SLUA110)Controllers:UCC27200/01(MOSFET Driver)UCC28220/21UCC3807UCC3570UCC3809UCC35701/702UCC3810(Dual)UCC35705/706UCC38C41/44/45UCC3801/04/05/13Application Notes:**Active Clamp and Reset Technique Enhances Forward Converter Performance (SEM1000)Design Considerations for Active Clamp and Reset Technique (SEM1100)Controllers:UCC2891,2,3,4,7UCC3580-1UC3824Application Notes:**Practical Considerations in Current Mode Power Supplies (SLUA110)Zero Voltage Switching Resonant Power Conversion (SLUA159)Controllers:UC28025UCC3806UC3825A,B UCC3808A UCC27200/01(MOSFET Driver)UCC28089(2x 50%)UCC38083/84/85/86\Application Notes:**1.5MHz Current Mode IC Controlled 50-Watt Power Supply (SLUA053)The UC3823A,B and UC3825A,B Enhanced Generation of PWM Controllers (SLUA125)Controllers:UC28025UCC3806UC3825A,B UCC3808A UCC28089(2x 50%)UCC38083/84/85/86Application Notes:**The UC3823A,B and UC3825A,B Enhanced Generation of PWM Controllers (SLUA125)Practical Considerations in Current Mode Power Supplies (SLUA110)Controllers:UC28025UCC3808A UCC27200/01(MOSFET Driver)UCC28089(2x 50%)UCC38083/84/85/86UCC3806UC3825A,BApplication Notes:**Designing a Phase Shifted Zero Voltage Transition Power Converter (SEM900)Design Review:500-W,40-W/in3Phase Shifted ZVT Power Converter (SEM900)Controllers:UC3875UC3879UCC3895电源拓扑结构ZHCT071。

开关电源拓扑结构详解

Output current is discontinuous (chopped). 输出电流不连续 ( 斩波 ) 。
Buck-Boost
Vin
降压 - 升压
Vout
Load 负载 (R)
Vout =
-D D'
Vin
Another arrangement of the inductor, switch and diode.
Output is always greater than or equal to the input. 输出总是比大于或等于输入。
– (neglecting the forward voltage drop of the diode). ( 忽略二极管的正向压降 ) 。
Input current is smooth. 输入电流平滑。
Forward 正激
Vin
i1 n
1
iRESET 复位
Vout
Load (R)
负载
m
Vout =
D n
Vin
The transformer-coupled version of the buck. 降压电路的变压器耦合形式。
– Discontinuous input current; smooth output current. 不连续的输入电流，平滑的输出电流。
– The voltage on each switch never exceeds the input voltage. 每个开关上的电压永远不会超过输入电压。
– No reset winding is needed. 无需对绕组磁道复位。
Push-Pull 推挽
Vout
n

Tapped-Buck Power Stage

2.1
Tapped-Buck steady-state Continuous Conduction Mode Analysis
The following is a description of steady-state operation in continuous conduction mode. The main result of this section is a derivation of the voltage conversion relationship for the continuous conduction mode Tapped-buck power stage. This result is important because it shows how the output voltage depends on duty cycle and input voltage or, conversely, how the duty cycle can be calculated based on input voltage and output voltage. Steady-state implies that the input voltage, output voltage, output load current, and duty-cycle are fixed and not varying.
Lp Ls n solve Ls
2
Lp n
2
Formula (7) - current ratio is the inverse ratio of number of turns, combine (7) and (3) we can get (8): (7)

英飞凌CoolMOS CE产品手册

CoolMOS™ CEBest price-performance SJ for consumer and lighting applications CoolMOS™ CE is a technology platform of Infineon´s market leading high voltage powerMOSFET designed according to the superjunction principle (SJ) and conceived to fulfillconsumer requirements. With the extended family, Infineon offers now 500V, 600V, 650Vand 800V devices targeting low power chargers for mobile devices and power tools, LCD,LED TV and LED lighting applications.This new series of CoolMOS™ is cost optimized to meet typical requirements in consumerwith no compromise on proven CoolMOS™ quality and reliability while still been priceattractive.CoolMOS™ CE is suitable for hard and soft switching applications and as modern SJ, itdelivers low conduction and switching losses improving efficiency and ultimately reducespower consumption. CoolMOS™ CE ease of use enables customers to reduce the design-incycle and compete in dynamic markets.CoolMOS™ CE targets a broad range of consumer and lighting applicationsProduct Brief/ceThermal behavior≤ 90°C on device, open case≤ 50°C/70°C close case temperature EMI within EN55022B standardEase of use and fast design-inLow conduction losses from large margin between R DS(on) typical to nominalLow switching losses from opti-mized output capacitance (E oss)Optimized EMI to balance switching speed and EMI behaviorGood controllability given the integrated R gLow power chargersAdaptersPC SilverboxLCD TVLED RetrofitLED DriversKey FeaturesKey BenefitsApplications0.19 – 3Ω0.4 – 2.1ΩAdapter / ChargerFlybackPC SilverboxPFC/TTF 80+; PFC / LLC 90+LCD TVLLC HalfbridgeLED Retrofit, LED DriversPFC / LLC Halfbridge / Non Isolated BuckLCD TVAdapter Quasi Resonant FlybackLED Retrofit / LED DriversQuasi Resonant Flyback0.65 – 1.5Ω0.31 – 2.8ΩPower supply topology and market segment Product family and R rangeCoolMOS™ CEBest price-performance SJ for consumer and lighting applicationsRecommendations for low power chargers and flyback applications (≤45W)Recommendations for mid and low power applications in LLC topologiesRecommendations for QR flyback topologiesCoolMOS™ CE meets the EMI QUASI-PEAK requirement in both 10W and 15W ChargersPublished byInfineon Technologies Austria AG 9500 Villach, Austria© 2014 Infineon Technologies AG.All Rights Reserved.Visit us:Order Number: B152-I0063-V1-7600-EU-EC-P Date: 11 / 2014Attention please!The information g iven in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsg arantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warran-ties and liabilities of any kind, including without limitation warranties of non-infring ement of intellectual property rights of any third party.InformationFor further information on technolog y, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ().WarningsDue to technical requirements components may contain dang erous substances. For information on the types in question please contact your nearest Infineon Technolo-g ies Office. Infineon Technolog ies Components may only be used in life-support devices or systems with the express written approval of Infineon Technolog ies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implant-ed in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.30M 506080100M 2003004005008001GP e g e l i n d B µV /mFrequenz in Hz80706050403020100-1015W design IPS65R1K0CEVERTICAL direction HORIZONTAL directionQUASI-PEAK measurement506080100M 2003004005008001G P e g e l in d B µV /mFrequenz in Hz 80706050403020100-1010W design IPS65R1K5CEVERTICAL direction HORIZONTAL directionQUASI-PEAK measurement 30MCoolMOS™ CE EMI performance in low power chargers for mobile devices。

滤波器术语英汉翻译

滤波器软件英汉翻译Lowpass notch filters :低通陷波滤波器Order: 阶filter circuits:滤波电路frequency response:幅频响应Passband :通频带、传输带宽repeatedly cycle：重复周期maximum signal to noise ratio：最大信噪比gain constants：增益系数，放大常数circuit topologies：电路拓扑结构gain shortfall：增益不足maximum output：最大输出功率last stage：末级preceding stage:前级stage filter：分级过滤器Gain Stage：增益级voltage amplitude：电压振幅Component values: 元件值maximum valued: 最大值minimum valued: 最小值standard value:标准值resistors: 电阻器capacitors:电容器operational amplifiers:运算放大器(OA) circuit board:(实验用)电路板active filters:有源滤波器supply currents:源电流power supplies:电源bypassing capacitors:旁路电容optimal:最佳的;最理想的Gain Bandwidth:带宽增益passive component:无源元件active component: 有源元件overall spread:全局;总范围Component characteristics:组件特性Modification:修改;更改data book:数据手册typical values:标准值;典型值default values:省略补充program execution:程序执行Reset button:复原按钮positive temperature coefficient:正温度系数variable resistors:可变电阻器cermet resistor:金属陶瓷电阻器output resistance:输出电阻distortion:失真single amplifier:单级放大器voltage follower:电压输出跟随器troubleshooting:发现并修理故障control panel,:控制面板。

OB_2301_Datasheet

GENERAL DESCRIPTIONOB2301W is a high performance and tightly integrated secondary side synchronous rectifier for switch mode power supply system. It combines a much lower voltage drop N-channel MOSFET to emulate the traditional diode rectifier at the secondary side of Flyback converter, which can reduce heat dissipation, increases output currentcapability and efficiency and simplify thermaldesign. OB2301W can support low system outputvoltage down to 2V at constant current mode.It is suitable for multiple mode applications including discontinuous conduction mode and quasi-resonant mode. With its versatility andoptimization, OB2301W can be used in various switch mode power supply topologies including secondary-side control topology and primary-sidecontrol topology.From the information on the secondary side of theisolation transformer, OB2301W generates adriving signal with dead time with respect to the primary side PWM signal to turn the integrated N-channel SR switch on and off in proximity of thezero current transition with the help of smart drivervoltage control. It is optimized for 5V output voltage. In primary-side control topology, OB2301W can detect the output voltage and feed back a series of warning pulses to primary side controller when the output voltage is lower than an inner-determined threshold to awaken the primary-side power switch to improve dynamic response. The externally adjustable minimum on time and property off time control scheme effectively avoid the ring impact induced by parasitic elements so that a reliable and noise free operation of the SR system is insured.OB2301W is offered in SOP8 package.FEATURES■ Secondary-side synchronous rectifier optimized for 5V output system ■ Suitable for DCM, QR operation■ Accurate secondary side MOSFET Vdssensing ■ Low cost small size CC/CV mode support ■ Up to 200kHz operation frequency■ 3A/2A peak current sink/source driver capability ■ Output voltage over-shoot and under-shoot control ■ Enhanced dynamic response with firingwarning pulses scheme ■ VDD UVLO protection APPLICATIONS ■ AC/DC 5V adaptors ■ Cell phone charger ■ 5V Bias supply ■ Low voltage rectification circuitsTYPICAL APPLICATIONGENERAL INFORMATIONPin ConfigurationThe OB2301W is offered in SOP8 package,shown as below.Ordering Information Part Number Description OB2301WCP SOP8, Pb-free in Tube OB2301WCPA SOP8, Pb-free in T&RPackage Dissipation Rating Package R JA(℃/W)SOP8 90Absolute Maximum Ratings Parameter Value Vin pin -0.6V to 7V VDD pin -0.6V to 7V VD pin -0.6V to 50V VS pin -0.6V to 7V RT pin -0.6V to 7V Drain pin -0.6V to BVdss Min/Max OperatingJunction Temperature TJ-40 to 150 ℃Operating AmbientTemperature T A-40 to 85 ℃Min/Max StorageTemperature Tstg-55 to 150 ℃Lead Temperature(Soldering, 10secs)260 ℃Note: Stresses beyond those listed under “absolutemaximum ratings” may cause permanent damage to the device. These are stress ratings only, functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability.Recommended Operating Range Symbol Parameter Min/Max VDD VDD Supply Voltage 4V to 5.5VOB2301W X X XHigh Performance SynchronousRectifierPackage C:SOP8Blank:Tube A: Tape/ReelPacking Package Pb-free P:Pb-freeMarking InformationYWWZZZOB2301WCPSY:Year CodeWW:Week Code(01-52)ZZZ:Lot CodeC:SOP8 PackageP:Pb-free PackageS:Internal Code(Optional)TERMINAL ASSIGNMENTSPin Name I/O DescriptionVS I This pin is connected to external n-channel MOSFET sourceVD I This pin is connected to external n-channel MOSFET drainDrain I/O SR Mosfet drain pin. This pin is connected to secondary-side winding of transformer Ground.GND PSupplyPowerVDD PVin I System output voltage detectionRT O Minimum on time control pin. A resistor is connected from this pin to GNDBLOCK DIAGRAMELECTRICAL CHARACTERISTICS(T A = 25℃, VDD=5V, unless otherwise noted) Symbol Parameter Test ConditionsMin Typ Max UnitSupply Voltage (VDD)Frequency@Vd=65KHz,VDD =5V,1nF Cap load atGATE. 1.5 2.0mA I_VDD_operation Operation currentFrequency@Vd=2KHz,VDD=5V,No load at GATE.0.5 0.7mAVdd_regulation_miniMinimum Vdd regulationvoltage4.2 V UVLO(ON)VDD Under Voltage LockoutEntry2.83.0 3.2V UVLO(OFF)VDD Under Voltage LockoutExit (Recovery)2.93.1 3.3V VD Detection SectionVth_SR_act SR MOSFET turn on thresholdvoltage detection at VD-350 mVVth_SR_deactSR MOSFET turn off thresholdvoltage detection at Vd-5 mV Tdelay_onSR MOSFET turn-onpropagation delay100ns Tdelay_offSR MOSFET turn-offpropagation delay 75 ns T_minimum_on SR MOSFET minimum on time RT=25K Ω 1.9 UsRT Section VrtVoltage reference at RT pin0.95 1 1.05VOver/Under Shoot Control SectionVo_deltaOutput delta variation in systemoutput undershoot control160 mV Vo_delta_enbOutput delta variation detectionenable voltage5.25 V Fsample Output delta variation detectionSample frequency15 KHzVo_low_clampSystem output undershootclamp control trigger voltage 4.5 4.6 4.7V Vo_High_clampSystem output overshoot clampcontrol trigger voltage5.8 V IVo_High_clamp System output overshoot clampcurrent70 mADsr_pulse Warning signal pulse widthwhen system output undershoot is detected800 nS Fsw Warning signal frequency whensystem output undershoot isdetected27 30 33 KHz Tdelay Warning signal blanking timeafter secondary-side65 usdemagnetization SR Mosfet SectionBVdss MOSFET Drain-SourceBreakdown Voltage50VRdson OnResistance 15mΩCHARACTERIZATION PLOTSOperation DescriptionOB2301W is a high performance and versatile synchronous rectifier. It can emulate the behavior of Schottky diode rectifier which directly reduces power dissipation of the traditional rectifiers and indirectly reduces primary-side loss due to compounding of efficiency gains.Startup and under voltage lockout(UVLO)OB2301W implements UVLO function during startup. When VDD rises above UVLO(off), the IC wakes up from under voltage lock out state and enter normal operation. When VDD drops below UVLO(on), the IC enter under voltage lock out state again and the SR gate is pulled low by 10K resistor on chip. In addition, there is a hysteresis window between UVLO(off) and UVLO(on) to make system work reliably.Synchronization rectifierOB2301W controls the turn-on and turn-off of synchronization rectifier MOSFET (SR MOSFET) by detection of drain-source voltage. When demagnetization of transformer starts, the secondary-side current will flow through the body diode of SR MOSFET and the voltage at the drain will drop to about -700mV. As soon as OB2301W detects this negative voltage, the driver voltage is pulled high to turn on the SR MOSFET after very short delay time about 100nS, refer to Fig.1.After the SR MOSFET is turned on, the drain voltage of SR MOSFET begins to rise based on its Rdson and secondary-side current. The drain voltage becomes higher with demagnetization going on. When the drain voltage rises above -5mV, the driver voltage will be pulled down to ground very quickly, refer to Fig.1Fig.1 SR MOSFET turn-on and turn-off timing Adjustable minimum on timeOB2301W offers adjustable minimum on time control. This timer can avoid effectively false turn-off due to high frequency interference caused by parasitic element at the start of secondary-side demagnetization.Tonmin=8*RT*10E(-11)Adaptive minimum off timeAt the end of demagnetization, SR MOSFET will be turn off. The remaining current will flow through body diode again, which may result in negative voltage (about -700mV) appears at drain and SR MOSFET will turn on again. In addition, the resonance oscillation between the magnetization inductance and parasitic capacitance after demagnetization may cause negative drain voltage. These may turn on SR MOSFET by mistake. To avoid above mis-turn-on of SR MOSFET, constant minimum off time can be used to screen it. But it may disturb SR MOSFET operation. For reliable SR operation, proprietary adaptive minimum off time control is implemented in OB2301W, which can guarantee reliable synchronous rectification operation in DCM, QR. Output voltage under-shoot ControlWhen a load transient event happens, the system output voltage may drops. OB2301W can prevent output voltage drop too low through direct detection of system output voltage. When the output voltage variation between the successive sample cycle exceeds 160mV, OB2301W canoutput 4 pulses with pulse width 800nS and 30Khz frequency to wake up primary side controller to switch the primary-side power MOSFET on to deliver more power to the loading in order to make output voltage back to regulation. In addition, if the system output voltage drops to threshold voltage determined by OB2301W (4.6V), the above primary side wake up process is still inFig.2 Output voltage under-shoot control timing diagramOutput overshoot clampFor poor system design, there is usually output overshoot during startup and load transient. To facilitate system design, OB2301W can detect output overshoot condition and prevent overshoot happen. When output voltage rises to meet the inner threshold, OB2301W will open a discharge path from Vdd to ground to clamp the system output voltage, so the system output overshoot can be prevented.Gate driverFor good and efficient synchronous rectification operation, the SR MOSFET should be turned on/off in very short time. Therefore strong driver capability is needed. OB2301W can offer typical source capability 2A and typical sink capability 3A. This guarantees fast turn-on and turn-off of SR MOSFET.PACKAGE MECHANICAL DATADimensions In Millimeters Dimensions In Inches SymbolMin Max Min MaxA 1.350 1.750 0.053 0.069 A1 0.050 0.250 0.002 0.010 A2 1.250 1.650 0.049 0.065 b 0.310 0.510 0.012 0.020 c 0.170 0.250 0.006 0.010D 4.700 5.150 0.185 0.203E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270 (BSC) 0.05 (BSC)L 0.400 1.270 0.016 0.050 θ 0º 8º 0º 8º©On-Bright Electronics Confidential Preliminary DatasheetOB_DOC_DS_2301W0111 OB2301WWHigh Performance Synchronous Rectifier IMPORTANT NOTICERIGHT TO MAKE CHANGESOn-Bright Electronics Corp. reserves the right to make corrections, modifications, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.WARRANTY INFORMATIONOn-Bright Electronics Corp. warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with its standard warranty. Testing and other quality control techniques are used to the extent it deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.On-Bright Electronics Corp. assumes no liability for application assistance or customer product design. Customers are responsible for their products and applications using On-Bright’s components, data sheet and application notes. To minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards.LIFE SUPPORTOn-Bright Electronics Corp.’s products are not designed to be used as components in devices intended to support or sustain human life. On-bright Electronics Corp. will not be held liable for any damages or claims resulting from the use of its products in medical applications.MILITARYOn-Bright Electronics Corp.’s products are not designed for use in military applications. On-Bright Electronics Corp. will not be held liable for any damages or claims resulting from the use of its products in military applications.。

210977181_基于级联双管反激拓扑的HVDC供电电路研究

电气传动2023年第53卷第3期ELECTRIC DRIVE 2023Vol.53No.3摘要：高压直流（HVDC ）输电系统常采用高压变换器进行高电位就近控制取电。

然而模块内的高母线电压及其大范围波动对取电电源的高可靠性设计形成挑战。

针对该问题，基于串联双管反激拓扑电路提出了一种高压模块取电系统。

该系统以多输入、单输出形式的直流变压器为变压载体，并利用在同步控制信号下的各级联单元的自均压特征实现了输入各串联电路的动态自均压控制，主动降低了各模块中半导体开关的电压应力；另外，该方法具有漏感能量回馈效率高、开关管最大电压应力钳位到输入电压优点。

最后，借助系统仿真与半实物仿真平台实验验证了所提自供电电路系统的可行性以及理论分析的正确性。

关键词：高位能取电电路；双管反激拓扑；动态均压中图分类号：TM46文献标识码：ADOI ：10.19457/j.1001-2095.dqcd24028Research on a Power Supply Circuit for HVDC Based on Dual -tube Flyback Topology LI Lingxin 1，JIAO Yuping 2，SUN Jiacheng 3，DENG Fujin 4，ZHANG Qi 3，REN Biying 3（1.Xi'an Megmeet Electric Co.，Ltd.，Xi'an 710065，Shaanxi ，China ；2.The 165th Institute of the SixthResearch Institute of China Aerospace Science and Technology Corporation ，Xi'an 710100，Shaanxi ，China ；3.School of Electrical Engineering ，Xi'an University of Technology ，Xi'an 710054，Shaanxi ，China ；4.School of Electrical Engineering ，SoutheastUniversity ，Nanjing 211189，Jiangsu ，China ）Abstract:High voltage converter is often used in high voltage direct current （HVDC ）transmission system to control power supply nearby at high potential.However ，the high bus voltage and its wide range fluctuation in the module pose a challenge to the high reliability design of power supply.To solve this problem ，a high voltage module power supply system was proposed based on the series dual-tube flyback topology.The multi-input and single-output DC transformer was used as the transformer carrier of the ing the self balancing characteristics of all levels of connected units under the synchronous control signal ，the dynamic self balancing control of each series circuit was realized ，and the voltage stress of semiconductor switches in each module was actively reduced.In addition ，this method has the advantages of high leakage inductance energy feedback efficiency and clamping the maximum voltage stress of the switch to the input voltage.Finally ，with the help of system simulation and hardware in the loop simulation platform ，the feasibility of the proposed self powered circuit system and the correctness of theoretical analysis were verified.Key words:high voltage power supply circuit ；dual-tube flyback topology ；active voltage balance基金项目：陕西省自然科学基金（2020JM-449）作者简介：李灵鑫（1979—），男，硕士，工程师，Email ：**********************通讯作者：孙家程（1998—），男，在读硕士，Email ：*****************基于级联双管反激拓扑的HVDC 供电电路研究李灵鑫1，焦玉屏2，孙家程3，邓富金4，张琦3，任碧莹3（1.西安麦格米特电气有限公司，陕西西安710065；2.中国航天科技集团公司第六研究院165所，陕西西安710100；3.西安理工大学电气工程学院，陕西西安710054；4.东南大学电气工程学院，江苏南京211189）模块化多电平变换器及其它级联型的半桥/全桥变换器系统已被广泛用于高压直流（high voltage direct current ，HVDC ）输电系统中[1-2]。

OB_OB2301_OB2300W_PRIMARY SIDE REGULATED SWITCHING MODE POWER SUPPLY CONTROLLER

GENERAL DESCRIPTIONOB2300W is a high performance and tightly integrated secondary side synchronous rectification control IC in switch mode power supply system. It integrate and drive a N-channelMOSFET SR device to emulate the behavior ofSchottky diode rectifiers, which directly reducespower dissipation of the traditional rectifiers and indirectly reduces primary-side loss due tocompounding of efficiency gains.It is suitable for multiple mode applications including discontinuous conduction mode, quasi-resonant mode. With its versatility and optimization, OB2300W can be used in various switch mode power supply topologies including secondary-side control topology and primary-sidecontrol topology.From the information on the secondary side of theisolation transformer , OB2300W generates a driving signal with dead time with respect to theprimary side PWM signal to turn the integrated N-channel SR switch on and off in proximity of thezero current transition with the help of smart drivervoltage control. It is optimized for 5V output voltage. In primary-side control topology, OB2300W can detect the output voltage and feed back a series of warning pulses to primary side controller when the output voltage is lower than an inner-determined threshold to awaken the primary-side power switch to improve dynamic response.The externally adjustable minimum on time and property off time control scheme effectively avoidthe ring impact induced by parasitic elements so that a reliable and noise free operation of the SR system is insured.OB2300W is offered in SOP8 package. FEATURES■ Secondary-side synchronous rectificationcontroller optimized for 5V output system ■ Suitable for DCM, QR operation ■ Accurate secondary side MOSFET Vdssensing ■ Low cost small size CC/CV mode support■ Up to 200kHz operation frequency■ 3A/2A peak current sink/source drivercapability ■ Output voltage over-shoot and under-shoot control ■ Enhanced dynamic response with firingwarning pulses scheme ■ VCC UVLO protection APPLICATIONS ■ AC/DC 5V adaptors ■ Cell phone charger ■ 5V Bias supply■ Low voltage rectification circuitsTYPICAL APPLICATIONb ri gco nf i de nt i al to 辰阳GENERAL INFORMATIONPin ConfigurationThe OB2300W is offered in SOP8 package,shown as below.Ordering Information Part Number Description OB2300WCP SOP8, Pb-free in Tube OB2300WCPA SOP8, Pb-free in T&RPackage Dissipation Rating Package R JA(℃/W)SOP8 90Absolute Maximum Ratings Parameter Value VCC pin -0.6V to 7V VD pin -0.6 to 50V VS pin -0.6 to 7V RT pin -0.6 to 7V Drain pin -0.6 to 50V Min/Max OperatingJunction Temperature TJ-40 to 150 ℃Operating AmbientTemperature T A-40 to 85 ℃Min/Max StorageTemperature Tstg-55 to 150℃Lead Temperature(Soldering, 10secs)260 ℃Note: Stresses beyond those listed under “absolutemaximum ratings” may cause permanent damage to the device. These are stress ratings only, functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability.Recommended Operating Range Symbol Parameter Min/Max VCC VCC Supply Voltage 5V to 5.5VC:SOP8Blank:Tube A: Tape/ReelP:Pb-freeOn -b ri gh tco nf de nt i al to辰阳Marking InformationYWWZZZ OB2300WCPSY:Year CodeWW:Week Code(01-52)ZZZ:Lot Code C:SOP8 Package P:Pb-free PackageS:Internal Code(Optional)TERMINAL ASSIGNMENTSPin Name I/O Description VS I This pin is connected to external n-channel MOSFET source VD I This pin is connected to external n-channel MOSFET drain Drain I/O SR Mosfet drain pin. This pin is connected to secondary-side winding of transformer NC I/O Not connected GND P Ground. VCC P Power Supply RT I Minimum on time control pin. A resistor is connected from this pin to GNDOn -b ri gh tco nf i de nt i al to辰阳BLOCK DIAGRAMVDVSOn -b ri gh tco nfELECTRICAL CHARACTERISTICS(T A = 25℃, VCC=5V, unless otherwise noted) Symbol Parameter Test ConditionsMin Typ Max UnitSupply Voltage (VCC)Frequency@Vd=65KHz,VCC=5V,1nF Cap load at GATE.1.52.0mAI_VCC_operation Operation currentFrequency@Vd=2KHz,VCC=5V,No load at GATE.0.5 0.7mAUVLO(ON) VCC Under VoltageLockout Entry2.83.0 3.2VUVLO(OFF) VCC Under VoltageLockout Exit (Recovery)2.93.1 3.3VVdrain Detection SectionVth_SR_act SR MOSFET turn onthreshold voltagedetection at VD-400 mV Vth_SR_deact SR MOSFET turn offthreshold voltagedetection at Vd-5 mV Tdelay_on SR MOSFET turn-onpropagation delay75 nsTdelay_off SR MOSFET turn-offpropagation delay75 nsT_minimum_on SR MOSFET minimumon timeRT=25K Ω 2 usRT SectionVrt Voltage reference at RTpin1 VOver/Under Shoot Control SectionVCC_low_clamp System outputundershoot clamp control trigger voltage4.54.6 4.7V VCC_High_clamp System output overshootclamp control triggervoltage5.8 V IVCC_High_clamp System output overshootclamp current150 mADsr_pulse Warning signal pulse width when systemoutput undershoot is detected800 nSFsw Warning signal frequencywhen system outputundershoot is detected 27 30 33 KHz Ssr_pulse Sum of successive warning pulse whenoutput undershoot is detected4 PulseTdelay Warning signal blanking 65 usOn -b ri gh tco nf i de nt i al to 辰阳time after secondary-side demagnetizationSR Mosfet Section BVdssMOSFET Drain-SourceBreakdown Voltage60 VRdson On Resistance 15 m ΩOn -b ri gh tco nf i de nt i al to 辰阳CHARACTERIZATION PLOTSnOOperation DescriptionOB2300W is a high performance and tightly integrated secondary side synchronous rectification control IC. With integrated N-Channel MOSFET, OB2300W can emulate the behavior of Schottky diode rectifier which directly reduces power dissipation of the traditional rectifiers and indirectly reduces primary-side loss due to compounding of efficiency gains.Startup and under voltage lockout(UVLO)OB2300W implements UVLO function during startup. When VDD rises above UVLO(off), the IC wakes up from under voltage lock out state and enter normal operation. When VDD drops below UVLO(on), the IC enter under voltage lock out state again and the SR gate is pulled low by 10K resistor on chip. To support CC operation, low value of UVLO(on/off) is designed dedicatedly. In addition, there is a hysteresis window between UVLO(off) and UVLO(on) to make system work reliably.Synchronization rectifierOB2300W controls the turn-on and turn-off of synchronization rectifier MOSFET (SR MOSFET) by detection of drain-source voltage. When demagnetization of transformer starts, the secondary-side current will flow through the body diode of SR MOSFET and the voltage at the drain will drop to about -700mV. As soon as OB2300W detects this negative voltage, the driver voltage is pulled high to turn on the SR MOSFET after very short delay time about 50nS, refer to Fig.1.After the SR MOSFET is turned on, the drain voltage of SR MOSFET begins to rise based on its Rdson and secondary-side current. The drain voltage becomes higher with demagnetization going on. When the drain voltage rises above -5mV, the driver voltage will be pulled down to ground very quickly, refer to Fig.1.Fig.1 SR MOSFET turn-on and turn-off timingAdjustable minimum on timeOB2300W offers adjustable minimum on time control. This timer can avoid effectively false turn-off due to high frequency interference caused by parasitic element at the start of secondary-side demagnetization. Tonmin=8*RT*10E(-11)Adaptive minimum off timeAt the end of demagnetization, SR MOSFET will be turn off. The remaining current will flow through body diode again, which may result in negative voltage (about -700mV) appears at drain and SR MOSFET will turn on again. In addition, the resonance oscillation between the magnetization inductance and parasitic capacitance after demagnetization may cause negative drain voltage. This may turn on SR MOSFET by mistake. To avoid above mis-turn-on of SR MOSFET, constant minimum off time can be used to screen it. But it may disturb SR MOSFET operation. For reliable SR operation, proprietary adaptive minimum off time control is implemented in OB2300W, which can guarantee reliable synchronous rectification operation in DCM, QR.Output voltage under-shoot ControlWhen a load transient event happens, the system output voltage will drops. OB2300W can prevent output voltage drop too low through direct detection of system output voltage. When the output voltage drops to threshold voltage determined by OB2300W (4.6V), OB2300W can output 4 pulses with pulse width 800nS and 30Khz frequency to wake up primary side controller to switch the primary-side powerOn -b ri gh tco nf i de nt i al to 辰阳MOSFET on to deliver more power to the loading in order to make output voltage back toregulation.Fig.2 Output voltage under-shoot control timing diagramOutput overshoot clampFor poor system design, there is usually output overshoot during startup and load transient. Tofacilitate system design, OB2300W can detect output overshoot condition and prevent overshoot happen. When output voltage rises to meet the inner threshold, OB2300W will open a discharge path from Vdd to ground to clamp the system output voltage, so the system output overshoot can be prevented.Gate driverFor good and efficient synchronous rectification operation, the SR MOSFET should be turned on/off in very short time. Therefore strong driver capability is needed. OB2300W can offer typical source capability 2A and typical sink capability 3A. This guarantees fast turn-on and turn-off of SR MOSFET.On -b ri gh tco nf i de nt i al to 辰阳PACKAGE MECHANICAL DATADimensions In Millimeters Dimensions In Inches SymbolMin Max Min MaxA 1.350 1.750 0.053 0.069 A1 0.050 0.250 0.002 0.010 A2 1.250 1.650 0.049 0.065 b 0.310 0.510 0.012 0.020 c 0.170 0.250 0.006 0.010D 4.700 5.150 0.185 0.203E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270 (BSC) 0.05 (BSC)L 0.400 1.270 0.016 0.050 θ 0º 8º 0º 8ºOn -b ri gh tco nf i de nt i al to 辰阳©On-Bright Electronics Confidential Preliminary DatasheetOB_DOC_DS_2300W0211 OB2300WHigh Performance Synchronous Rectifier Controller IMPORTANT NOTICERIGHT TO MAKE CHANGES On-Bright Electronics Corp. reserves the right to make corrections, modifications, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. WARRANTY INFORMATION On-Bright Electronics Corp. warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with its standard warranty. Testing and other quality control techniques are used to the extent it deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. On-Bright Electronics Corp. assumes no liability for application assistance or customer product design. Customers are responsible for their products and applications using On-Bright’s components, data sheet and application notes. To minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. LIFE SUPPORT On-Bright Electronics Corp.’s products are not designed to be used as components in devices intended to support or sustain human life. On-bright Electronics Corp. will not be held liable for any damages or claims resulting from the use of its products in medical applications. MILITARY On-Bright Electronics Corp.’s products are not designed for use in military applications. On-Bright Electronics Corp. will not be held liable for any damages or claims resulting from the use of its products in military applications. On -b r i g h t c o n f i d e n t i a l t o 辰阳。

FRIWO Switchmode Power Supply MPP 15 Medical

Asia, Shanghai Asia, Tokyo Asia, Seoul North America,Colorado Springs South America, São PauloHazardous Substances6S w i t c h m o d e T e c h n o l o g ySwitchmode TechnologyFRIWO offers an extensive range of standard devices with excel-lent features. At a corresponding volume, further variants for all kinds of special requirements can be developed. In the process, the application considerably determines the design:■■■■Safety Regulations, Protection Classes, and Connection TypesPower supply units can be found in a number of applications. For this reason, the specific safety regulations of the devices being powered, depending on the regulation of the testing authori-ties of the respective countries, such as the UL (Underwriter Labo-ratories), VDE (Association of German Electrical Engineers), etc., must be particularly observed.The EMC conformity according to EN 61000-6-X, under conside-ration of system perturbations according to EN 61000-3-2 should be observed for power supply units independent of the switching concept.When selecting the housing, the ambient conditions, for ex-ample in moist environments, must be considered. For general applications, the type of protection according to EN 60529-IP20 (Operation in Dry Rooms – Protection Against the Penetration of Solid Foreign Body) suffices. According to application, power supply units are designed in accordance with the respective appli-cable regulations. Due to the safe galvanic separation, all devices fulfil the low-voltage guideline and provide a safety extra-low voltage (SELV).Switchmode power supply units are particularly suited for fee-ding portable devices. Their low weight and extremely compact form mean they can be just as advantageously combined with all other types of applications.An additional increase in attractiveness results from the wide-range input so that the power supply units can be operated all over the world using mains voltages from 100 to 240 V AC and 50 to 60 Hz. This makes worldwide use possible and means a drastic reduction in the logistics expenses on the part of our customers.Such solutions can either be realised as desktop units with world-wide standardised IEC sockets (our DT series) or as plug-in power supply units with exchangeable mains plug adapters (our MPP series). Details regarding these products can be found on the following pages.First, here is some important technical information:Primary Switched Power Supply UnitsIn such a power supply unit, the mains voltage is first rectified and smoothed. After that, it is switched at high frequencies and transferred via a converter transformer. The required low voltage is then generated within another rectification and smoothing step. A high-precision direct voltage with very low tolerances can be provided by means of an additional stabilisation circuit.Beyond these advantages of the compact design and wide-range input, the high efficiency is of decisive importance: at an achiev-able 90 percent, the losses due to emission of heat are mini- mized. The requirements for very low stand-by power consumption (stand-by power) can only be met using this technology.In addition to output current and voltage, requirements regarding control stabilisation and ripple of the output voltage, EMC behaviour, efficiency, etc. influence the power supply unit design.Specific requirements regarding size and shape have an effect on the component expense and thus the costs of the unit.Various circuit topologies can be used according to the requirements.Designs as plug-in power supply units, desktop devices, or even as modules (= open frame) for all special applications can also be realised.MPP 15 MedicalConforms to IEC 60601-1Technical data Input voltage Input current Frequency Efficiency EMCOutput voltage toleranceApplications Blood analyzer Patient monitorsMeasuring instruments Laboratory equipment15 W a t t sMPP 15 Medical51.5 mm34 m m87.5 m mMPP 15 Medical。

MAX20754EVKIT8 评估套件说明说明书

Evaluates: MAX20754 and MAX20790MAX20754EVKIT8Evaluation KitOne Analog Way, Wilmington, MA 01887 U.S.A. | Tel: 781.329.4700 | © 2021 Analog Devices, Inc. All rights reserved.© 2021 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners.Click here to ask an associate for production status of specific part numbers.General DescriptionThis MAX20754EVKIT8 evaluation kit (EV kit) demon-strates the MAX20754 PMBus™-compatible dual-output multiphase power-supply controller. The controller gener-ates six pulse-width modulated (PWM) control signals, or “phases.” The MAX20754EVKIT8 EV kit is a single-output design, with all six phases assigned to one output. The output uses coupled inductor topologies. Coupled induc-tors reduce the effective inductor value and size without excessive ripple current, reducing required output capaci-tance, and improving transient response.The EV kit also demonstrates the MAX20790 power-stage device; there are six MAX20790 devices, one per phase.Features●Optimized for Single +10V to +16V Supply• Onboard +3.3V Regulator (MAX17501) ●Generates One Output• Output: 6-Phase, 1V, 225A ●500kHz Switching Frequency ●Enable Switch●PMBus Configuration and Control• Compatible with Maxim’s PowerTool™ GUI • Easy Connection to PC Using MAXPOW-ERTOOL002 USB-to-SMBus Interface (order separately) ●Status LEDs• Power-Good• Power-Stage Fault • SMBus Alert ●Proven PCB Layout●Compensation Scheme Optimized for HighBandwidth ●Fully Tested and Assembled319-100863; Rev 0; 12/21Ordering Information appears at end of data sheet.PMBus is a trademark of SMIF , Inc.PowerTool is a trademark of Maxim Integrated Products, Inc.MAX20754EVKIT8 BoardEvaluation KitQuick StartRequired Equipment●12V DC power supply capable of delivering 300W atthe desired input voltage●Windows PC with a spare USB port●MAXPOWERTOOL002 USB-to-SMBus Interface(order separately)●Maxim Digital PowerTool GUI softwareOptional Equipment●AC/DC “wall adapter” for convenient low-power eval-uation, connecting to J5 on the EV kit. For example:• CUI p/n ETSA120500UC-P5P-SZ (12V, 5A, 60Wmax)• CUI p/n EMSA120300-P5P-SZ (12V, 3A, 40W max)●300MHz four-channel oscilloscope●BNC-to-SMB cables for convenient, low-noise oscil-loscope connection to the input and output voltagesense points. For example: CD International Tech-nology p/n BSB-174TPR-3.●Electronic load capable of sinking 240A at 1V• Ask about the Maxim MINILOAD device●Digital multimeter (DMM)ProcedureNote: In the following sections, text in bold refers to items directly from the EV kit software.The EV kit is fully assembled and tested. Follow the steps below to verify board operation.Caution: Do not turn on the power supply until all connections are completed.1) Visit the Maxim Integrated website to download andinstall the latest version of the Digital PowerToolsoftware.2) Connect the USB cable from the PC to the MAX-POWERTOOL002 interface adapter.3) Connect the adapter ribbon cable to the matchingheader J13 on the EV kit, ensuring that J13-Pin 1 isadjacent to the red wire on the ribbon cable.4) Connect the DC power supply positive lead to J6 andthe negative lead to J7 (or use an AC-DC adapterthrough J5 using a center-positive 2.1mm I.D. x5.5mm O.D. plug).5) If available, connect the electronic load(s) to theoutputs at screw terminals ST1, ST2, ST3, and ST4, being careful to observe the VOUT and GND polarity indicated by the silkscreen labels.6) If available, connect the oscilloscope to the EV kit forwaveform analysis. Coaxial SMB cable connections J8, and J9 allow low-noise measurement of the input and output ripple waveforms. (Note that the inputvoltage signal at J8 is resistively attenuated 20:1 toprotect oscilloscope inputs.)7) Ensure that jumpers JP1 and JP2 have shuntsinstalled.8) Enable the external 12V supply.9) Enable the onboard MAX17501 12V-to-3.3V sup-ply circuit with switch S5. This supplies 3.3V to theMAX20754, which in turn generates 1.8V power forthe MAX20790 power-stage devices.10) Start the GUI software. The “Dashboard” windowshould appear as shown in Figure 1.11) Enable the MAX20754 output by operating switch S2on the EV kit, or by setting the OPERATION and ON_ OFF_CONFIG commands in the PowerT ool GUI.Evaluation KitDetailed Description of SoftwareThe PowerT ool software presents system-level information on the Dashboard tab. This view collects basic information for all Maxim PMBus devices found on the bus. This tab configures sequencing and output voltage levels and pres-ents an overview of the system status. Clicking the Stop Communication button stops all PMBus transactions from the PowerT ool GUI. T o force detection of all active devices on the bus, click the Search for Devices button.For detailed information on a particular device, click on the sub-tab for that device’s slave address. This opens a view with a set of further sub-tabs specific to that device as shown in Figure 2. The sub-tabs available vary depending on the GUI version and the connected device’s capability, but typically include Configuration, Monitor, Faults Set, and PMBus Command.The Configuration tab presents the most commonly used PMBus command data in human-readable form. The device status is updated by continuous polling of these commands. Configuration settings for an individual device can be saved to or restored from an external file. The PMBus command settings can be saved to or restored from the device’s internal nonvolatile memory as well.The Monitor tab shows continuously updated telemetry data from the device. Rolling plots of output voltage, input voltage, output current, and temperature data are shown, including indication of fault limits relative to the operating point.Figure 1. Maxim PowerTool Graphical User Interface Software Dashboard WindowEvaluation KitThe Faults Set tab allows the user to configure andmonitor the status of most protection and warning func-tions. The fault levels and fault response commands areconfigured from this tab. The full contents of the STATUS_register commands are available by clicking the ViewFault/Warning bit by bit button. Fault and warning flags are cleared by clicking the Clear Fault/Warning button,which sends the CLEAR_FAULTS PMBus command tothe device.The PMBus Command tab shows all supported PMBus commands in a series of sub-tabs, allowing detailed con-figuration and analysis of the command values. The user can view the command values in a hexadecimal or deci-mal format by checking or clearing the Force Hex check-box. The Use PEC checkbox enables or disables Packet Error Checking for all GUI communications. Note that the command data is continuously updated by polling; typing a new value into the text boxes causes the new value to be sent to the device.Figure 2. Detailed View for One Device; Configuration Sub-TabEvaluation KitDetailed Description of HardwareThe MAX20754EVKIT8 demonstrates a single-output step-down power supply solution, with one six-phase output, which makes use of the coupled inductors. This solution provides high output-current with high efficiency, fast load-transient response, and low ripple and noise.The MAX20754 controller automatically interleaves all PWM outputs assigned to a given output at even inter-vals. The output is six-phase resulting in 60° timing. Each PWM signal is connected to one MAX20790 power-stage device, operating in parallel configuration. This configura -tion is capable of supplying up to 37.5A per phase. Each power-stage is in turn connected to one winding of a coupled inductor.The MAX20754 controller evenly shares the load current between phases in a given output. The EV kit is con-figured to operate both outputs at 500kHz fundamental switching frequency, but can be modified to operate anywhere from 300kHz to 800kHz with appropriate com -pensation network changes. The output is set to supply 1V. The maximum output current for the output is 225A.The output voltage, output rise-time and fall-time, switch -ing frequency, PMBus address, slope compensation, and maximum output current are set using only five external resistors, allowing simple setup and application configura -tion that does not require PMBus commands. Refer to the MAX20754 and MAX20790 integrated circuit data sheets for complete details on design and component selection.Table 1. Jumper JP1Table 2. Jumper JP2Table 3. Connector ListSHUNT POSITIONDESCRIPTIONInstalled MAX17501 +3.3V output connected to MAX20754 V DD3P3 input.Not installedMAX20754 can be powered by an external +3.3V supply at TP35.SHUNT POSITIONDESCRIPTIONInstalled MAX17501 +3.3V output connected to AUX3P3 rail (ENx debounce and status LED logic, etc.).Not installedThe AUX3P3 rail can be powered by an external +3.3V supply at Pin 2 of JP2.REFERENCE DESIGNATORDESCRIPTIONJ6Input supply positive voltage (+5V to +16V)J7Input supply groundST1Rail 1 output positive voltage ST2Rail 1 output ground ST3Rail 1 output positive voltage ST4Rail 1 output groundJ13Header for connection to MAXPOWERTOOL002 USB-to-SMBus interface.Pin 1: SCL Pin 3: SDA Pin 7: ALERTEven-numbered pins: GroundJ8SMB jack for input supply monitoring. This connection has a 1/20 resistive divider with 50Ω back-impedance. Connect to an oscilloscope with 20x scaling and ≥1MΩ input resistance.J9SMB jack for Rail 1 output voltage monitoring. This connection has 50Ω back-impedance. Connect to an oscilloscope with 1x scaling and ≥1MΩ input resistance.J5Alternate input supply barrel connector, 2.1mm I.D. x 5.5mm O.D. barrel jack, center-positive. Do not exceed 5A current.Evaluation KitTable 4. SwitchesTable 5. Test PointsREFERENCE DESIGNATORFUNCTIONS5SPDT toggle switch. Enable MAX17501 +3.3V buck regulator to supply V DD3P3Green light: output enabledS4Momentary tactile switch; no function on MAX20754S2SPDT toggle switch. Enable Rail 1 output regulation.Green light: PGOOD1 pin highAmber light: ALERT pin asserted lowRed light: FAULT pin asserted low (power stage fault detected)REFERENCE DESIGNATORDESCRIPTIONTP21ALERT signal (open-drain)TP20FAULT signal (open-drain)TP36SDA signal (open-drain)TP37SCL signal (open-drain)TP17EN1 signal (open-drain)TP7Input supply positive voltage TP8Input supply groundTP19Input voltage sense point for efficiency measurements TP22Input ground sense point for efficiency measurements TP18PGOOD1 signal (open-drain)TP6PWM0 signal (Rail 1)TP5PWM1 signal (Rail 1)TP4PWM2 signal (Rail 1)TP3PWM3 signal (Rail 1)TP2PWM4 signal (Rail 1)TP1PWM5 signal (Rail 1)TP13Rail 1 loop-response (Bode plot) measurement positive injection point (see MAX20754 EV Kit Schematic )TP23Rail 1 loop-response (Bode plot) measurement negative injection point (see MAX20754 EV Kit Schematic )TP25Rail 1 output voltage efficiency measurement point TP26Rail 1 output ground efficiency measurement pointTP9Rail 1 output voltage feedback sense point (for line/load regulation accuracy measurement with DMM)TP10Rail 1 output ground feedback sense point (for line/load regulation accuracy measurement with DMM)TP34V DDS supply; +1.8V power to MAX20790 power stage, from MAX20754 integrated switcher output TP35V DD3P3 supply; +3.3V power to MAX20754 integrated switcher TP29, TP30, TP31, TP32,TP33, TP39GroundEvaluation Kit#Denotes RoHS compliance.PARTTYPE MAX20754EVKIT8#MAX20754 EV Kit MAXPOWERTOOL002#USB-to-SMBus Interface5.0mV/div(AC-COUPLED)V OUT(V = 1V, I = 0A, f = 500kHz)PHASE MARGIN = 62.24BANDWIDTH = 68.75kHz50mV/div(AC-COUPLED)50A/divOrdering InformationEvaluation KitMAX20754 EV Kit Bill of MaterialsEvaluation KitMAX20754 EV Kit Bill of Materials (continued)0 0Evaluation KitMAX20754 EV Kit SchematicP W M 2R A T I O = 0.068238 T O M A T C H V I N _S C A L E _M O N I T O R D E F A U L TN O D R O O PR I N TZ 12 2 16 2 5 4 13 0 <----P H A S E S F I R I N G O R D E R 1 2P W M 5P W M 0O U T P U T #1V O U T 1:R 1R D E SZ 25 2 4 1 3 04 2 4 1 33 2 1 3R L DP W M 3P W M 1P W M 4O U T P U T #1C O M P E N S A T I O N N E T W O R K S C H E M E 9AC 2R 2C L DC I N TT O N _R I S E , T O F F _F A L L : 0.5M SO C P = 257AA D D R E S S : 0X 5A M R A M P : M H (0X 25, 37 D E C .)F R E Q U E N C Y _S W I T C H : 500K H Z V O U T _C O M M A N D : 1.0V T P 33T P 30T P 29T P 23T P 13T P 34R 58R 47R 21R 38R 37R 20R 34C 37R 27R 33C 29R 24C 25C 28R 16R 17C 90000U 1C 11C 12C 13C 14C 15C 16C 6C 2R 6R 5R 4R 3R 1C 5C 1C 4C 3L 1T P 6T P 5T P 4T P 3T P 2T P 1R 8R 7C 7C 47R 9R 111R 2R 113R 57R 36R 35R 19R 18R 46R 15C 1068P F A 1_O U T 1A 2B _O U T 1P G M C0.47B L U EV D DB L AC KB L AC KB L AC KS N S N 1A P A D A P A D 22U F22U FA P A D A P A D A P A D A P A D 1.2U HA 3_O U T 1A 3_I N 1499S N S P 14992.49K100P FR R E FA 1_O U T 1A 2_I N 1A 2_O U T 1A 2B _O U T 1C S 4M S C L SD AF A U L T _NP G O O D 1P G M DP G M CP G M BP G M AC S 0ME N 1A L E R T _N B P A DB P A D0.50%0.1U F68P F68P F 68P F 034K1K101000P F1K 1K1654994994021K1K1K332806C S 1M C S 2MV D D V I N _E F F _NP W M 1C S 5SA 3_I N 1P W M 5U V _I N C S 0S C S 1S C S 2S C S 3S C S 4S C S 5S C S 3M P W M 4P W M 3T S 1SP W M 2P W M 0P G M AC S 4SC S 3SC S 1SC S 0S4990.1U FA 2_O U T 1V D DC S 5M 0.1U FV D D 3P 322U FV D D S20K 22U FA 3_O U T 1787100P F49968P FD N I D N ID N I D N I D N ID N ID N I D N IC S 2S68P F D N I220P F0.015U F D N I1200P FP G M D 4.64K6495.76K P G M BA 2_I N 10.015U F 6040V I N _E F F _P00Evaluation KitMAX20754 EV Kit Schematic (continued)M A X 20790M A X 20790D N IR 120R 119P W M 0R 122C 244121U 24700P F 4700P F C 164P W M 4R 123D N I D N IR 1144700P F U 37123114700P F C 55C 165C 89C 103C 166C 167C 119C 120C 24C 39C 117C 118C 186C 187C 129C 130C 230C 231C 232C 184C 185C 26R 1211210987654C 19R 10C 17C 21C 131C 132C 133C 50C 51111098654324321L 2C 148C 147C 146C 53R 50V I N10U F10U F 10U F10U F47U F 0.22U F10U F10U F10U F 47U F1000P F4.7A V D D 0V I N10U FD N ID N I D N I D N I D N ID N ID N I100U F100U F 100U FA V D D 40.1U FC L 1208-2-100T R -R L X 0V D D SV D D SL X 4V O U T 1C S 4ST S 1S V O U T 1T S 1SC S 0S0.22U F0.1U F4700P F1.0U F47U F47U F 101.0U F 1.0U F1U F 00100U F100U F100U F1.0U F4.71000P F01U F104700P F B II NI NB II NI NEvaluation KitMAX20754 EV Kit Schematic (continued)M A X 20790M A X 20790451U F C 33C L 1208-2-100T R -RC 2274700P F U 4D N I6L X 2P W M 1C 107C 174C 175C 123C 124C 106C 38C 45C 172C 173C 23C 108C 109C 178C 179C 125C 126C 153C 224C 176C 177C 142C 141R 26121110987321R 117R 125C 242C 30R 25121110987654321U 5R 115C 8R 128R 126R 127C 139C 138C 1404321L 3C 36C 137C 35C 31C 3210U F10U F10U F10U F47U F 4.74.7D N I C S 2S1000P F1.0U FD N ID N ID N ID N ID N I D N ID N ID N I100U FV O U T 1C S 1S1000P FL X 10.22U F0.1U FA V D D 1V D D SV D D SV I NV I NA V D D 2T S 1SP W M 2T S 1SV O U T 10.1U F1047U F 47U F 4700P F 4700P F 1.0U F 4700P F 10U F 10U F 10U F100U F100U F01U F00100U F100U F10U F100.22U F4700P F4700P F 47U F1.0U F100U F1.0U FI NI NB II NI NB IEvaluation KitEvaluation KitMAX20754 EV Kit Schematic (continued)E F F I C I E N C Y M E A S U R E M E N T P O I N T - C O N N E C T W I T H L E A D S T O T P 26V I N S E N S E P O I N T F O R E F F I C I E N C Y M E A S U R E M E N T(A L S O F E E D S U V _I N )E F F I C I E N C Y M E A S U R E M E N T P O I N T - C O N N E C T W I T H L E A D S T O T P 25V O U T 1 S M BV I N S M B (D I V I D E B Y 20)T P 10T P 8T P 7T P 9S T 4S T 3C 218C 241C 219C 220C 221C 222C 235C 234C 238C 237C 240C 236C 239C 217C 216C 215C 214C 213C 195C 194C 193C 192C 191C 190C 223C 159C 158C 67C 157C 66C 156C 155C 154J 8J 9J 5C 210C 211C 196C 197C 91C 92C 93C 94C 203C 198C 199C 200C 201C 202C 204C 205C 206C 207C 208C 209C 84C 85C 86C 87C 88C 95C 96C 97C 98C 99C 100C 101C 188C 189D 2T P 26T P 25C 83C 82C 81C 80C 79C 76C 77C 78C 75C 65C 63C 62C 56C 212C 74C 73C 71C 72C 70C 69R 66S T 2S T 1R 67R 64C 68R 65D 1C 152C 151C 150C 149C 61C 60C 59C 58C 57J 7J 6R 63R 60T P 22T P 19R 61R 62A P A DA P A DR E D A P A D 0V I N _E F F _NB L AC K100U F B L A C K100U F 100U F 0.01U F 0.01U F A P A D V I N _E F F _P78081000.01U F 330U F108-0740-001R E D100U FM B R S 540T 3D N I D N I D N ID N ID N ID N I100U F100U F100U F100U F100U F 100U F 100U F 100U F 100U F D N ID N I 100U F D N I D N ID N ID N ID N ID N I 0V O U T 1V O U T 1V I NV O U T 1V O U T 1V O U T 1V O U T 10.01U F 0.01U F0.01U F 100U F 100U F100U F100U F 100U F100U F100U F 100U F 100U F 100U F 0.01U F 0.01U F 100U F 100U F 100U F100U F100U F100U F100U F100U F100U F100U F100U F100U F100U F100U F100U F100U F100U F 100U F100U F 100U F100U F 0.01U F 100U F 100U F0.01U F 100U F100U F100U F 0.01U F 100U F 100U F100U F 100U F100U F100U F100U FM B R S 540T 3100U F100U F0.01U F 100U F330U F 100U F 100U F 100U F 100U F 7808100U F 100U F 100U F 0.01U F 100U F100U F 100U F 100U F S N S N 17808100P FS N S P 1131-3701-266131-3701-2661K 52.3V I NV O U T 10V O U T 1330U F108-0740-001V O U T 149.97808P J -102A HEvaluation KitMAX20754 EV Kit Schematic (continued)T P 35J 4J 3J 20J 13T P 37T P 36R 102R 99R 98Q 1R 40S 5R 59R 48R 39S 5R 23C 225J P 2J P 1C 113L 5C 41U 8C 40C 112C 27R E S E T _NV D D 3P 3R E G 3P 3A L E R T _NP C C 02S A A NA U X 3P 3S C LA P A DS D AA P A D10033U HP C C 02S A A NV I NT S W -108-07-L -DS C LS D A100K2N 7002150V I N100KV O U T 1V O U T 1V O U T 1E N 3P 3R E G 3P 3A U X 3P 337.4KU P S -08-01-01-L -R AG 12J P C F U P S -08-01-01-L -R AU P S -08-01-01-L -R A100K100K100K1.0U FG 12J P C F47U F 1.0U F3300P F10U F10U FR E DM A X 17501E A T B +Evaluation KitEvaluation KitMAX20754 EV Kit PCB Layout—Top SilkscreenMAX20754 EV Kit PCB Layout—Internal Layer 2 GND MAX20754 EV Kit PCB Layout—Top LayerMAX20754 EV Kit PCB Layout—Internal Layer 3 SignalEvaluation KitMAX20754 EV Kit PCB Layout—Internal Layer 4 Signal MAX20754 EV Kit PCB Layout—Bottom Layer MAX20754 EV Kit PCB Layout—Internal Layer 5 GND MAX20754 EV Kit PCB Layout—Bottom SilkscreenEvaluation KitInformation furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use.Specifications subject to change without notice. No license is granted by implicationor otherwise under any patent or patent rights of Analog Devices. Trademarks andregistered trademarks are the property of their respective owners.REVISION NUMBERREVISION DATE DESCRIPTIONPAGES CHANGED12/21Initial release—Revision History。

the power mosfet 应用手册

the power mosfet 应用手册The Power MOSFET Application ManualIntroductionThe Power MOSFET Application Manual is a comprehensive guide that delves into the various applications and uses of Power MOSFETs. This manual aims to provide engineers, designers, and enthusiasts with an in-depth understanding of Power MOSFETs, their characteristics, and how they can be effectively implemented in different electronic systems.Section 1: Understanding Power MOSFETs1.1 What is a Power MOSFET?Power MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are electronic devices that offer high efficiency, fast switching speeds, and excellent power handling capabilities. This section delves into the structure and functioning of Power MOSFETs, explaining how they differ from their bipolar transistor counterparts.1.2 MOSFET Characteristics and SpecificationsThis subsection explores the various specifications and characteristics of Power MOSFETs, including voltage ratings, current ratings, on-resistance, gate charge, and thermal considerations. It provides engineers with the necessary knowledge to select the appropriate MOSFETs for different applications.Section 2: Power MOSFET Applications2.1 Switching ApplicationsPower MOSFETs have found extensive use in switching applications, such as motor drives, power supplies, and inverters. This section highlights the advantages of using Power MOSFETs in these applications and provides guidelines for circuit design, gate drive requirements, and considerations for minimizing power losses.2.2 Audio AmplificationPower MOSFETs are also commonly used in audio amplifiers due to their low distortion and high power capabilities. This subsection discusses the design considerations for audio amplifiers, including load matching, biasing, and output protection. It provides engineers with the necessary information to design efficient and high-quality audio amplifiers.2.3 Lighting ApplicationsPower MOSFETs are vital components in various lighting applications, including LED drivers, automotive lighting, and streetlights. This section explores the key considerations for designing lighting circuits using Power MOSFETs, including thermal management, dimming techniques, and EMI suppression.2.4 Power SuppliesPower MOSFETs play a crucial role in power supply designs, offering high efficiency and compact size. This subsection discusses the use of Power MOSFETs in different power supply topologies, such as buck converters, boost converters, and flyback converters. It also addresses the challenges ofdesigning power supplies with Power MOSFETs and provides guidelines for achieving optimal performance.Section 3: Protection and Reliability3.1 Overcurrent and Overvoltage ProtectionTo ensure the reliable operation of circuits using Power MOSFETs, adequate protection mechanisms must be implemented. This section covers the different protection techniques, such as overcurrent and overvoltage protection circuits, along with their advantages and limitations.3.2 Thermal ManagementProper thermal management is essential for preventing Power MOSFETs from overheating and ensuring their longevity. This subsection discusses the thermal behavior of Power MOSFETs and presents various cooling techniques, such as heatsinks, thermal vias, and thermal pads, to efficiently dissipate heat.3.3 ESD ProtectionElectrostatic Discharge (ESD) can pose a significant threat to Power MOSFETs and other sensitive electronic components. This section provides an overview of ESD protection methods and highlights the importance of implementing proper ESD protection measures in Power MOSFET applications.ConclusionThe Power MOSFET Application Manual aims to equip engineers, designers, and enthusiasts with the knowledge and skills necessary toeffectively utilize Power MOSFETs in their electronic designs. By providing insights into the characteristics, applications, and protection considerations, this manual serves as a valuable resource for those looking to optimize the performance and reliability of their circuits.。

机械英文外文翻译现代电力电子及电源技术的发展

机械英文外文翻译现代电力电子及电源技术的发展Development of Modern Power Electronics and Power Supply TechnologyAbstract:1. IntroductionModern power electronics and power supply technology play a crucial role in various applications such as renewable energy systems, electric vehicles, and information technology. These advancements have been driven by the need for energy-efficient and reliable power conversion systems, as well as the demand for cost-effective solutions. This paper provides an overview of the development of power electronics and power supply technology, highlighting key advancements in the field.2. Evolution of Power Semiconductor Devices3. Advances in Power Conversion Topologies4. Emergence of New Power Supply ArchitecturesIn addition to advancements in power semiconductor devices and topologies, new power supply architectures have emerged to meet the increasing demands of modern applications. One example is the integration of energy storage systems with power electronic converters, enabling the use of renewable energy sources such as solar and wind power. Another example is thedevelopment of bidirectional power supply systems, which allow power to flow in both directions, enabling applications such as grid-tied inverters and bidirectional electric vehicle chargers. These new architectures have revolutionized power supply systems by offering improved energy efficiency, reliability, and functionality.5. Challenges and Future DirectionsConclusionIn conclusion, the development of modern power electronics and power supply technology has undergone significant advancements in recent years, driven by the need for energy-efficient and reliable power conversion solutions. The evolution of power semiconductor devices, advances in power conversion topologies, and the emergence of new power supply architectures have revolutionized the field. However, there are still challenges to be addressed and future directions to be explored in order to further enhance the efficiency, reliability, and functionality of power electronics and power supply systems.。

西门子SITOP PSU8600云端供电系统说明书

SITOP power supply/sitop-psu8600SITOP PSU8600A cloud-enabled power supply complete with opencommunication protocols and full TIA integrationBrochureEdition 10/2018Convenient parameter assignmentwith the SITOP Manager, for example for targeted shutdown of PCs in theevent of a power failure.In the TIA Portal, the SITOP PSU8600 can easily be configured for the PROFIenergy break. The outputs to be switched off are simply selected to achieve this.SITOP PSU8600 is the first power supply system that enables full integration in your automation system – in Totally Integrated Automation (TIA) via PROFINET or in OPC UA via Industrial Ethernet with open communica-tion. The unique functionalities and communication capabilities offer new usage possibilities and transparency in the control circuit.The system consists of a basic device with one or four integrated outputs as well as various additionalm odules which can be connected in series withoutw iring work. The system can be expanded to include 36 independent outputs, each of which is protected against overload and can be set between 4 and 28 volts.Because the current of each output is continuouslyr ecorded, overload states can be detected at an early stage.Current and voltage measurements support the energy management of your plant, along with the ability to switch on/off outputs via PROFIenergy.SITOP PSU8600 –the modular power supply system that can be integrated in any plant23Top integration –with complete system integration all the way to MindSphereComplete integration with TIA“For the very first time, the SITOP PSU8600 enables users to fully integrate a power supply into networked automation applications and TIA Portal.” Engineering in the TIA Portal is very convenient; evaluation of the operating and diagnostics data is supported by ready-made function blocks for SIMATIC S7 user programs. WinCC faceplates are available for opera-tor control and monitoring free-of-charge.Easy integration into open systemsThe SITOP PSU8600 also performs manufacturer-independent communication with other systems via the certified OPC UA server. Parameter assignment andd iagnostics can be conveniently performed in the SITOP Manager for the Windows 7 or Windows 10 operatings ystem. Via the user interface based on a Web browser, the SITOP power supplies with communication capability can be easily configured online and offline, even using mobile terminals.Flexible integration into automation networks The Industrial Ethernet/PROFINET interface enables c omprehensive data exchange.Thanks to the switch functionality with two ports, thepower supply system can be easily integrated into existing automation networks – in both line and ring topologies. Thanks to the OPC UA server, the data can also be t ransferred directly to the cloud, e.g. to MindSphere.Integrated Web serverMonitoring or diagnostics of the power supply can also take place remotely using the integrated Web server. This function can be enabled physically on the unit, which simplifies commissioning and service.Top efficiency –from engineering to operationCompact designWith a high efficiency rating of up to 94%, the units produce minimal heat, allowing for a very compact foot-print - even with integrated overload monitoring of each output.High system flexibilityThe modular system with the innovative System Clip Link connection system for data and energy transfer allows for an individual combination of the power supply system without additional wiring. The order of the modules is i rrelevant in this case.Comprehensive software supportSimple integration in SIMATIC S7 enables configuration in the TIA Portal and ready-made software blocks. Ready-made faceplates facilitate visualization in SIMATIC WinCC and the SITOP library supports visualization in SIMATIC PCS 7. When it comes to the entire engineering process, 3D data, circuit diagram macros and configurable manuals are available for download free of prehensive manual settingsAll relevant settings can be made manually, directly on the unit to ensure ease of commissioning.”The values can then be applied in the software.High functionalityBecause every output can be set to a custom value between 4 V and 28 V, there is no need for additional power supply units to supply 5 V or 12 V products. Considering that the voltage can be adjusted during operation, applications that previously could not be implemented, or have beenimplemented at a very high cost, are now easily feasible. Because each output can also be switched on and off via software – including a 40 A output – contactors can be omitted here.Acquisition of consumption data and PROFIenergy The energy data of all outputs is acquired during operation. In this way, they offer comprehensive transparency inr elation to the load characteristics or can be processedf urther in energy management systems. On top of this, support of PROFIenergy enables the power supply outputs to be selectively switched off, saving power during break times and lowering energy costs.Please scan the QR code for more informationFollow us on:/sitop-playlist /siemensindustryMore information:More on SITOP PSU8600:/sitop-psu8600Siemens AGProcess Industries and Drives Process Automation Postfach 48 4890026 Nürnberg Germany© Siemens AG 2018Subject to change without prior notice Article no. 6ZB5341-0BB02-0AA0W-FPN8Z-PD-PA287 / Dispo 10001BR 1018 3. ROT 8 En Printed in GermanyThe information provided in this brochure contains merely general descriptions or characteristics of performance which in case of actual use do not always apply as described or which may change as a result of further development of the products. An obligation to provide the respective characteristics shall only exist if expressly agreed in the terms of contract. Availability and technical specifications are subject to change without notice.All product designations may be trademarks or product names ofSiemens AG or supplier companies whose use by third parties for their own purposes could violate the rights of the owners.Security informationSiemens provides products and solutions with industrial security functions that support the secure operation of plants, systems, machines and networks.In order to protect plants, systems, machines and networks against cyber threats, it is necessary to implement – and continuously maintain – a holistic, state-of-the-art indus-trial security concept. Siemens’ products and solutions constitute one element of such a concept.Customers are responsible for preventing unauthorized access to their plants, systems, machines and networks. Such systems, machines and components should only be connected to an enterprise network or the internet if and to the extent such a connection is necessary and only when appropriate security measures (e.g. firewalls and/or net-work segmentation) are in place.For additional information on industrial security measures that may be implemented, please visithttps:///industrialsecurity.Siemens’ products and solutions undergo continuousdevelopment to make them more secure. Siemens strongly recommends that product updates are applied as soon as they are available and that the latest product versions are used. Use of product versions that are no longer supported, and failure to apply the latest updates may increase cus-tomer’s exposure to cyber threats.To stay informed about product updates, subscribe to the Siemens Industrial Security RSS Feed under https:///industrialsecurity.For protection against brief power failures, the system can be expanded with buffer modules. For protection against long power failures, it can even be expanded to form an uninterruptible power supply.478 x 2.5 A (NEC Class 2)56Energy Storage Link (2-wire cable)Top reliability – through selectivity, monitoring and buffering of outputsSITOP PSU8600 – the modular system for all requirements103524 V/40 A24 V/40 A, 4 x 10 A4 x 10 A300 ms/40 A24 V/20 A24 V/20 A, 4 x 5 A4 x5 A5100 ms/40 A4 s/40 A 1A10 s/40 A62Setting options in the TIA Portal, via STEP 7 or SITOP Manager:• Switch-on and switch-off of individual outputs for direct control of consumers or to save energy, e.g. via PROFIenergy protocol•Program-controlled change of the voltage of each output from 4 to 28 volts for the variable supply of consumers such as DC motors (e.g. in fans or belt drives)•Threshold below the tripping current for messages for preventive maintenance Diagnostics options in the TIA Portal, via STEP 7 or SITOP Manager:•Early detection of dynamic, continuous or recurring overload states with the aid of momentary current values •Status message of the outputs (on, off, overload)•Outputs can be freely configured for messages for preventive maintenance•Detection and logging of short-term power and phase failures to analyze the mains quality•Advance warning of the overload of individual outputs, system overload and excess temperature•Acquisition of the energy data (current, voltage) of each output to determine possible energy savingsTechnical specifications Basic units PSU8600 with one outputBasic device PSU8600 with four outputs Output current, outputs 20 A, 1 x 20 A 40 A, 1 x 40 A 20 A, 4 x 5 A40 A, 4 x 10 A Article No.6EP3436-8SB00-2AY06EP3437-8SB00-2AY06EP3436-8MB00-2CY06EP3437-8MB00-2CY0Rated input voltage value/range 3 400-500 V AC/3 320 … 575 V ACRated line frequency value/range 50/60 Hz/47 ... 63 HzMains buffering15 ms (at 400 V), extendable via buffer modules and UPS module Rated input current value 1.4-1.1 A2.75-2.2 A1.4-1.1 A2.75-2.2 A–Inrush current, required MCB< 14 A, 6-16 A Char. C, 3-ph. coupled or 3RV2011-1DA10 (setting 3 A) or 3RV2711-1DD10EMCLine harmonics limitation (EN 61000-3-2), radio suppression level Class B (EN 55022)Efficiency at rated values, approx.93 %94 %93 %94 %Output voltage, rated value24 V DC ±3 %, setting range: 4 ... 28 V DC Setting range threshold value overload protection 2 … 20 A 4 … 40 A 0.5 … 5 A 0.5 … 10 A Output current, overload (extra power)30 A for 5 s/min 60 A for 5 s/min30 A for 5 s/min60 A for 5 s/minAmbient temperature -25 ... +60 °C Dimensions (W x H x D) in mm 80 x 125 x 150125 x 125 x 150100 x 125 x 150125 x 125 x 150Weight, approx. 1.8 kg2.65 kg2 kg2.65 kgCertificationsCE, cULus, CB, cCSAus, IECEx, ATEX, cCSAus Class I Div 2, SEMI F47, DNV GL, ABSTechnical specificationsBUF8600 buffer modulesBAT8600 battery modulesType/buffer times with rated current 100 ms/40 A 300 ms/40 A 4 s/40 A10 s/40 ABAT8600 PbBAT8600 LiFePO4Article No.6EP4297-8HB00-0XY06EP4297-8HB10-0XY06EP4293-8HB00-0XY06EP4295-8HB00-0XY06EP4145-8GB00-0XY06EP4143-8JB00-0XY0Brief description:Extension of buffer time on power interruptions.A total of two buffer components (BUF8600, UPS8600) can be used in the system network. External energy storage for UPS moduleUPS8600. Up to 5 battery modules of the same type can be connected to extend the buffer time.Storage technologyElectrolytic capacitors (internal)Double-layer capacitors (internal)Lead (Pb), 380 Wh, 48 V Lithium-iron-phosphate(LiFePO4), 264 Wh, 48 V Buffer time at 120 W (24 V/5 A) 800 ms 2.4 s 40 s 80 s 2 h 4 min 1 h 56 min Buffer time at 240 W (24 V/10 A)400 ms 1.2 s 20 s 40 s 57 min 60 min Buffer time at 480 W (24 V/20 A) 200 ms 600 ms 10 s 20 s 25 min 29 min Buffer time at 960 W (24 V/40 A) 100 ms 300 ms 4 s 10 s 10 min14 minTypical charging time19 s54 s5 min 10 min 2 h 45 min (120 W) 2 h 40 min (120 W)Output current, overload (extra power)60 A for 5 s/min 60 A for 5 s/min40 A60 A for 5 s/min60 A for 5 s/min via UPS8600Ambient temperature-25 … +60 °C -10 ... +50 °CDimensions (W x H x D) in mm 60 x 125 x 150125 x 125 x 15060 x 125 x 150125 x 125 x 150322 x 187 x 110 (for wall mounting)Weight, approx. 1.33 kg2.26 kg1.25 kg1.95 kg13 kg6.5 kgCertificationsCE, cULus, CB, cCSAus, IECEx, ATEX, cCSAus Class I Div 2, SEMI F47, DNV GL, ABSCE, cURus, CB, cCSAus, IECEx, ATEX, pending: DNV GL and ABSCE, CB, cCSAus,pending: DNV GL andABS 40 A/960 W98Diagnostics and setting options on the modulesStatus displays on basic devices• 3-color LED for status of power supply system• Display for manual or remote operation• 4 LEDs for PROFINET statusMode selector on basic devices• Control via IE/PN (settings on device are disabled)• P rioritized buffering output 1 on power failure; i.e. buffering of the first output for as long as possible,r emaining outputs are switched off after approx. half of the buffering time • Selectable overload behavior: Electronic shutdown or constant current • O n delay between the outputs, also of expansion modules CNX8600: 0 ms, 25 ms, 100 ms, load-optimized • PSU8600 with 4 outputs: Parallel operation of outputs 1 + 2 or 3 + 4,with 1 output: Characteristic curve can be switched for symmetrical load distribution in parallel operation • Approval of the Web server12Settings and display per output(manual operation for commissioning and servicing)• LED button for on/off/reset with status display • Setting of output voltage: 4 ... 28 V DC • Setting of response threshold: See table •Overload behavior–101 to 149 % of setpoint: Switch off after 5 s–Above this: Current limitation to 150 % and switch off after 200 ms• PSU8600 with 4 outputs: LED displays with parallel operation of outputs 1 + 2, 3 + 4Contacts on basic devices• Signaling contact (changeover contact) "DC OK" • Remote reset34Status displays expansion and buffer modules •3-color LEDContacts on buffer modules•Remote ON/OFF (for disabling buffering, e.g. on shutdown of plant)•Signaling contact (normally open) "Charge status > x %"(can be set via software)•Signaling contact (normally open) "Buffer mode"56BAT8600 Pb 380 WhBAT8600 LiFePO4 264 Wh7bMonitoring and selectively switching outputs To prevent a short circuit or singular overload causing a plant-wide outage, all outputs are monitored and selec-tively switched off in event of a failure.” The voltage and current threshold can be set individually for each output. Outputs with 100 VA power limitation according to NEC Class 2Each SITOP CNX8600 expansion module with 8 outputs of 2.5 A is certified according to NEC Class 2, meaning that all requirements are met for switching equipment in the USA. However, it can also be used worldwide to supply devices that are designed for supply according to NEC Class prehensive diagnosticsThe SITOP PSU8600 is able to capture and transmit voltage and current data independently across all outputs via PROFINET. Dynamic, continuous, or frequent overload situations can be identified early on to reduce plantdowntimes. Furthermore, the time of any power failures is recorded, allowing users to examine a history of grid feed-in quality.Easily bridge power failures from seconds to hours Buffer modules with electrolytic capacitors are used in the event of very short power interruptions. Variants withd ouble-layer capacitors (UltraCaps) enable buffering for up to several seconds. With the UPS module UPS8600, the power supply system actually becomes a fully-fledged DC UPS. The outputs are buffered for up to several hours by means of lead-based or lithium-iron-phosphate-basedb attery modules. In contrast to a conventional DC UPS, the output voltage in buffer mode does not change the battery voltage. Instead; each output is supplied with precisely the set voltage. Configuration of the UPS is made easy with the engineering and monitoring tool, SITOP Manager. Evens everal PCs can be specifically shut down.Status displays on UPS/battery module •a) 3-color LED UPS module •b) 3-color LED battery circuitMode selector on UPS module •Charging capacity 120 W/60 W •Preferred charging mode •Buffer time limit 1 ... 88 min.Contacts on UPS module •Remote ON/OFF (for disabling buffering)•Start from the battery (stand-alone mode)•Signaling contact (normally open) "Charge status > x %"•Signaling contact (normally open) "Buffer mode"•Signaling contact (normally open) "Battery circuit fault"789CNX8600 expansion modules 4 x 5 A4 x 10 A8 x 2.5 A6EP4436-8XB00-0CY06EP4437-8XB00-0CY06EP4436-8XB00-0DY0Brief description: Distribution of DC supply to additional load feeders andm onitoring for overload; selective switch-off of faulty feeders, response threshold can be set individually. A total of 4 modules can be used in the system network.97 %97 %97 %24 V DC ±3 %, setting range: 4...28 V DC 0.5 … 5 A 0.5 … 10 A0.5 … 2.5 A-25 ... +60 °C 60 x 125 x 15060 x 125 x 150100 x 125 x 1501.15 kg1.15 kg1.29 kgCE, cULus, CB, cCSAus, IECEx, ATEX, cCSAus Class I Div 2, DNV GL; ABSCE, cULus, CB, cCSAus,IECEx, ATEX, ABS, DNV GL, NEC Class 24The visualization of all relevant values and states of the power supply system offers maximum transparency. Like here, via ready-made WinCC faceplates, but also via the SIMATIC PCS 7 library, the integrated Web server or the SITOP ManagerTechnical specifications UPS module UPS8600Type UPS8600Article No.6EP4197-8AB00-0XY0Brief descriptionBuffering in case of power failures. The Energy Storage Link enables diagnostics and temperature-controlled charging for maximums ervice life of the battery modules. A total of twob uffer components (BUF8600, UPS8600) can be used in the system network.External energy storage BAT8600 battery module Charging capacity 120 W, 60 W (switchable)Buffer power 960 watt (40 A at 24 V)Ambient temperature -25 ... +60 °C Dimensions (W x H x D) in mm 60 x 125 x 150Weight, approx.0.9 kgCertificationsCE, cULus, CB, cCSAus, IECEx, ATEX, pending: DNV GL and ABS7a7b3。

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D D
Type of Converter
Q1
FLYBACK
Np Lp Ns D1 Co
FORWARD
L Np Ns D1 D2 Co
2 SWITCH FORWARD
D4 Q2 D1 D2 Co L Ns
ACTIVE CLAMP FORWARD
L C1 Np Ns D1 D2 Q2 Co
Np
Circuit Configuration
D ) 1 D
VDS=Vin ID1=Iout x (1-D)
VDS=Vout ID1=Iout
VDS=Vin-Vout ID1=Iout
VDS=Vin+Vout ID1=Iout
VD1 =Vin
PWM
VD1 =Vout
PWM Vin VDS(Q1) IQ1
VD1 =Vin-Vout
PWM Vin VDS(Q1) IQ1
Circuit Configuration
Q1 D1 Co Co Co Q1 L2 Co
Ideal Transfer Function
C
Vout Ton =( )=D Vin Tp
Tp Vout 1 =( )=( ) Vin Tp Ton 1 D 1 1 D
Ton Vout D =( )=( ) Vin Tp Ton 1 D 1 1 D
Vout Ns Ton Ns =2 x ( )x( ) =2 x ( )x D Vin Np Tp Np Ns I Q1 (max)= ( ) x Iout Np VDS=Vin Iout x (1-2D ) ID1=( Iout x D ) + 2 Ns ) Np
Vout Ns Ton Ns =2 x ( )x( ) =2 x ( )x D Vin Np Tp Np Ns I Q1 (max)= ( ) x Iout Np VDS=Vin 1 ID1= x Iout 2 Ns ) Np
D3
Q1 D3 Q1 Q1
Ideal Transfer Function
C
Tp x Vout Vout =D x Vin 2 x Iout x Lp Vin x Ton I Q1 (max)= ( ) Lp VDS=Vin+Vout x ( ID1=Iout Ns ) Np Np ) Ns
Ns Ton Ns Vout =( )x( )=( )x D Vin Np Tp Np Ns I Q1 (max)= ( ) x Iout Np VDS=2 x Vin ID1=Iout x D Ns ) Np
VD1 =Vou+Vin
B PWM Vin VDS(Q1) IQ1
Voltage and Current Waveforms
Vin VDS(Q1) IQ1
ID2 ID2 ID2
ID2
IL IL IL V V Ton Tp A V Ton Tp Ton Tp
IL
V Ton Tp
A
惠州市三华工业有限公司
L2
Ideal Transfer Function
C
Vout Ns Ton Ns =( )x( )=( )x D Vin Np Tp Np Ns I Q1 (max)= ( ) x Iout Np VDS=Vin Iout ID1=( Iout x D ) + x (1-2D ) 2
Vout Ns Ton Ns =2 x ( )x( ) =2 x ( )x D Vin Np Tp Np Ns I Q1 (max)= ( ) x Iout Np VDS=2 x Vin Iout x (1-2D ) ID1=( Iout x D ) + 2 Ns ) Np
B C
Drain Current Drain Voltage Diode Current Diode Reverse Voltage
B
VD1 =Vou+Vinx (
PWM Vin VDS(Q1)
VD1 =Vou+Vinx (
PWM Vin VDS(Q1) IQ1
VD1 =Vou+Vinx (
PWM Vin VDS(Q1) IQ1
设计
DATA：
1 2 3 4 5 6
秦顺军
2009年9月9日
审核
PCB NO.：
7
标准化
核准
SHEET： 2
8
OF
3
1
2
3
4
5
6
7
8
POWER SUPPLY TOPOLOGIES
Twxas Instrumets,the Power Behind Your Designs
D D
Type of Converter
Vout Ns Ton Ns =( )x( )=( )x D Vin Np Tp Np Ns I Q1 (max)= ( ) x Iout Np VDS=Vin ID1=Iout x D Ns ) Np
Vout Ns Ton Ns =( )x( )=( )x D Vin Np Tp Np Ns I Q1 (max)= ( ) x Iout Np 1 VDS=Vin x ( ) 1-D ID1=Iout x D Ns 1 ) ) x ( 1-D Np
Ton Tp
Ton Tp
A
A
惠州市三华工业有限公司
MODE NO. ：POWER SUPPLY TOPOLOGIES 1.0 REV：
设计
DATA：
1 2 3 4ห้องสมุดไป่ตู้5 6
秦顺军
2009年9月9日
审核
PCB NO.：
7
标准化
核准
SHEET： 3
8
OF
3
MODE NO. ：POWER SUPPLY TOPOLOGIES 1.0 REV：
设计
DATA：
1 2 3 4 5 6
秦顺军
2009年9月9日
审核
PCB NO.：
7
标准化
核准
SHEET： 1
8
OF
3
1
2
3
4
5
6
7
8
POWER SUPPLY TOPOLOGIES
Twxas Instrumets,the Power Behind Your Designs
1
2
3
4
5
6
7
8
POWER SUPPLY TOPOLOGIES
Twxas Instrumets,the Power Behind Your Designs
D D
Type of Converter
BUCK
Q1 L L
BOOST
D1
BUCK BOOST
(Inverting)
D1 Q1 L L
SEPIC
C D1
VD1 =Vou+Vinx (
PWM Vin VDS(Q1) IQ1
Voltage and Current Waveforms
IQ1
ID1
ID1
ID1
ID1
IL
IL VS
IL VS
IL VS
VS Ton Tp Ton Tp Ton Tp Ton Tp
A
A
惠州市三华工业有限公司
MODE NO. ：POWER SUPPLY TOPOLOGIES 1.0 REV：
PWM Vin
Vin VDS(Q1) IQ2 IQ1 IQ2
Vin VDS(Q1) IQ1 IQ2
VDS(Q1) IQ1 IQ2
Voltage and Current Waveforms
IQ1
ID1
ID2
ID1
ID2
ID1
ID2
ID1
ID2
IL VS
IL VS
IL VS
IL VS
Ton Tp
Ton Tp
B C
Drain Current Drain Voltage Diode Current
B
Vin Ns Diode Reverse VD1 = 2 x ( Np ) Voltage PWM
Vin VDS(Q1)
VD1 = Vin x (
PWM
VD1 = Vin x (
PWM
VD1 = Vin x (
Vout D =( ) Vin 1 D
C
Drain Current Drain Voltage Diode Current Diode Reverse Voltage
B
I Q1 (max)=Iout
I Q1 (max)=Ioutx (
)
I Q1 (max)=Ioutx (
)
I Q1 (max)=Ioutx (
HALF BRIDGE
C2 Q2 Ns D1 D2 L Co
PUSH PULL
D1 Np Ns
L Q3 Co
PULL BRIDGE
D1 Q2 L Q3 Co
PHASH SHIFT ZVT
Q2 L1 D1 D2 Co
Circuit Configuration
C1
Np Ns Np Ns D2 D2 Q1 Q2 Q1 Q4 Q1 Q4 Q1