IRS2573DSTRPBF;IRS2573DSPBF;中文规格书,Datasheet资料
2SD2573资料
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
IRF7351TRPBF;IRF7351PBF;中文规格书,Datasheet资料
100
ID, Drain-to-Source Current (A)
10
TJ = 150°C 1
TJ = 25°C
VDS = 25V
≤60µs PULSE WIDTH
0.1
2
3
4
5
6
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
/
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0 ID = 8.0A
1.8 VGS = 10V
1.5
1.3
1.0
0.8
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C)
1
≤60µs PULSE WIDTH Tj = 25°C
0.1 0.1
3.8V
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
ID, Drain-to-Source Current (A)
100 10
TOP BOTTOM
VGS 10V 8.0V 6.0V 5.0V 4.5V 4.3V 4.0V 3.8V
0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4
/
10 10msec 1msec
IR3553MTRPBF;中文规格书,Datasheet资料
FEATURES∙ Peak efficiency up to 93.2% at 1.2V∙ Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode ∙ Input voltage (VIN) operating range up to 15V ∙ Output voltage range from 0.25V up to 3.3V ∙ Output current capability of 40A DC ∙ Operation up to 1.0MHz∙ Integrated current sense amplifier ∙ VCC under voltage lockout ∙ Thermal flag∙ Body-Braking® load transient support ∙ Diode-emulation high efficiency mode∙ Compatible with 3.3V PWM logic and VCC tolerant ∙ Compliant with Intel DrMOS V4.0∙ PCB footprint compatible with IR3550 and IR3551 ∙ Efficient dual sided cooling∙ Small 4mm x 6mm x 0.9mm PQFN package ∙ Lead free RoHS compliant packageAPPLICATIONS∙ Voltage Regulators for CPUs, GPUs, and DDR memory arrays ∙ High current, low profile DC-DC convertersDESCRIPTIONThe IR3553 integrated PowIRstage® is a synchronous buck gate driver co-packed with a control MOSFET and a synchronous MOSFET with integrated Schottky diode. It is optimized internally for PCB layout, heat transfer and driver/MOSFET timing. Custom designed gate driver and MOSFET combination enables higher efficiency at lower output voltages required by cutting edge CPU, GPU and DDR memory designs.Up to 1.0MHz switching frequency enables high performance transient response, allowing miniaturization of output inductors, as well as input and output capacitors while maintaining industry leading efficiency. The IR3553’s superior efficiency enables smallest size and lower solution cost. The IR3553 PCB footprint is compatible with the IR3550 (60A) and the IR3551 (50A).Integrated current sense amplifier achieves superior current sense accuracy and signal to noise ratio vs. best-in-class controller based Inductor DCR sense methods. The IR3553 incorporates the Body- Braking® feature which enables reduction of output capacitors. Synchronous diode emulation mode in the IR3553 removes the zero-current detection burden from the PWM controller and increases system light-load efficiency.The IR3553 is optimized specifically for CPU core power delivery in server applications. The ability to meet the stringent requirements of the server market also makes the IR3553 ideally suited to powering GPU and DDR memory designs and other high current applications.PINOUT DIAGRAMFigure 3: IR3553 Pin Diagram, Top ViewORDERING INFORMATIONTYPICAL APPLICATION DIAGRAMIOUTVCC BBRK#REFINVOUTFigure 4: Application Circuit with Current Sense AmplifierTYPICAL APPLICATION DIAGRAM (CONTINUED)VCC BBRK#VOUTFigure 5: Application Circuit without Current Sense AmplifierFUNCTIONAL BLOCK DIAGRAMPHSFLT#REFINPWM VIN SWSW SW SW SWSW TGND BOOST IOUT VCCBBRK#GATEL CSIN+LGNDPGNDFigure 6: IR3553 Functional Block DiagramPIN DESCRIPTIONSABSOLUTE MAXIMUM RATINGSStresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied.Note:1. Maximum BOOST – SW = 8V.2. Maximum VIN – SW = 25V.3. All the maximum voltage ratings are referenced to PGND (Pins 12 and 13).Note:1. Thermal Resistance (θJA) is measured with the component mounted on a high effective thermal conductivity test board in free air.Refer to International Rectifier Application Note AN-994 for details.ELECTRICAL SPECIFICATIONSThe electrical characteristics involve the spread of values guaranteed within the recommended operating conditions. Typical values represent the median values, which are related to 25°C.RECOMMENDED OPERATING CONDITIONS FOR RELIABLE OPERATION WITH MARGINELECTRICAL CHARACTERISTICSNotes1. Guaranteed by design but not tested in production2.V IN=12V, V OUT=1.2V, ƒSW = 300kHz, L=210nH (0.2mΩ), VCC=6.8V, C IN=47uF x 4, C OUT =470uF x3, 400LFM airflow, no heat sink, 25°Cambient temperature, and 8-layer PCB of 3.7” (L) x 2.6” (W). PWM controller loss and inductor loss are not included.3. V IN=12V, V OUT=1.2V, ƒSW = 400kHz, L=150nH (0.29mΩ), VCC=7V, C IN=47uF x 4, C OUT =470uF x3, no airflow, no heat sink, 25°C ambienttemperature, and 8-layer PCB of 3.7” (L) x 2.6” (W). PWM controller loss and inductor loss are not included.TYPICAL OPERATING CHARACTERISTICSCircuit of Figure 32, V IN =12V, V OUT =1.2V, ƒSW = 400kHz, L=150nH (0.29m Ω), VCC=7V, T AMBIENT = 25°C, no heat sink, no air flow, 8-layer PCB board of 3.7” (L) x 2.6” (W), no PWM controller loss, no inductor loss, unless specified otherwise.TYPICAL OPERATING CHARACTERISTICS (CONTINUED)Circuit of Figure 32, V IN =12V, V OUT =1.2V, ƒSW = 400kHz, L=150nH (0.29m Ω), VCC=7V, T AMBIENT = 25°C, no heat sink, no air flow, 8-layer PCB board of 3.7” (L) x 2.6” (W), no PWM controller loss, no inductor loss, unless specified otherwise.Figure 13: Normalized Power Loss vs. VCC Voltage Figure 14: Power Loss vs. Output Inductor Figure 15: VCC Current vs. Switching FrequencyFigure 16: Switching Waveform, I OUT = 0AFigure 17: Switching Waveform, I OUT = 40AFigure 18: PWM to SW Delays, I OUT = 10APWM 2V/divSW 5V/div40ns/divPWM 5V/divSW 5V/divGATEL 10V/div400ns/divPWM 5V/divSW 5V/divGATEL 10V/div400ns/div分销商库存信息: IRIR3553MTRPBF。
IR2156STRPBF;IR2156PBF;IR2156SPBF;IR2156S;IR2156;中文规格书,Datasheet资料
Features•Ballast control and half-bridge driver in one IC •Programmable preheat frequency •Programmable preheat time •I nternal ignition ramp•Programmable over-current threshold •Programmable run frequencyData Sheet No. PD60182-IBALLAST CONTROL ICCFL Application Diagram•Programmable dead time •DC bus under-voltage reset •Shutdown pin with hysteresis•Internal 15.6V zener clamp diode on Vcc •Micropower startup (150µA)•Latch immunity and ESD protection •Also available LEAD-FREE (PbF)Descriptionboth 14 lead PDIP and 14 lead SOIC packages. 1IR2156(S ) & (PbF)IR2156(S) & (PbF) 2Absolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.Note 1:This IC contains a zener clamp structure between the chip V CC and COM which has a nominal breakdown voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power sourcegreater than the V CLAMP specified in the Electrical Characteristics section.IR2156(S ) & (PbF)3Recommended Operating ConditionsFor proper operation the device should be used within the recommended conditions.Note 2:Enough current should be supplied into the V CC lead to keep the internal 15.6V zener clamp diode on this lead regulating its voltage, V CLAMP .Electrical CharacteristicsV CC = V BS = V BIAS = 14V +/- 0.25V, V VDC = Open, R T = 39.0k Ω, R PH = 100.0k Ω, C T = 470 pF, V CPH = 0.0V, V CS = 0.0V,V SD = 0.0V, C LO, HO = 1000pF , T = 25o C unless otherwise specified.IR2156(S) & (PbF) 4Electrical CharacteristicsV CC = V BS = V BIAS = 14V +/- 0.25V, V VDC = Open, R T = 39.0kΩ, R PH= 100.0kΩ, C T = 470 pF, V CPH = 0.0V, V CS = 0.0V, V SD = 0.0V, C LO, HO = 1000pF, T A = 25o C unless otherwise specified.IR2156(S ) & (PbF)5Block DiagramIR2156(S) & (PbF) 6State DiagramVCC < 9.5V(VCC Fault or Power Down)orSD > 5.1V(Lamp Fault or Lamp Removal)IR2156(S ) & (PbF)7Timing DiagramsNormal operationIR2156(S) & (PbF) 8Timing Diagrams Fault conditionIR2156(S ) & (PbF)9IR2156(S) & (PbF) 10( A分销商库存信息:IRIR2156STRPBF IR2156PBF IR2156SPBF IR2156S IR2156IR2156STR。
IRLML2803TRPBF;中文规格书,Datasheet资料
Gate-to-Source Charge
0.48 0.72 nC VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
1.1 1.7
VGS = 10V, See Fig. 6 and 9
td(on)
Turn-On Delay Time
3.9
2
/
ID , Drain-to-Source Current (A)
10
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
0.1 0.1
3.0V
20μs PULSE WIDTH
TJ = 25°C
A
1
10
VDS , Drain-to-Source Voltage (V)
A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
IR2153SPBF;IR2153PBF;IR2153DPBF;IR2153STRPBF;IR2153;中文规格书,Datasheet资料
Features••15.6V zener clamp on Vcc •True micropower start up•Tighter initial deadtime control••••Lower power level-shifting circuit•••Low side output in phase with R T•••ESD protection on all leads •Also available LEAD-FREE(NOTE:For new designs, we recommendIR’s new product IRS2153D)SELF-OSCILLATING HALF-BRIDGE DRIVERProduct SummaryTypical Connections600V MAXIR2153(D)(S) &(PbF)Descriptionporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the C T pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on V CC has been reached, resulting in a more stable profile of frequency vs time at startup.Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.8 Lead SOIC Data Sheet No. PD60062 revOIR2153(D)(S) & (PbF)NOTE:For new designs, we recommend IR’s new product IRS2153DNote 1:This IC contains a zener clamp structure between the chip V CC and COM which has a nominal breakdown voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the V CLAMP specified in the Electrical Characteristics section.Note 2:Care should be taken to avoid output switching conditions where the V S node flies inductively below ground by more than 5V.Note 3:Enough current should be supplied to the V CC pin of the IC to keep the internal 15.6V zener diode clamping the voltage at this pin.Recommended Operating ConditionsFor proper operation the device should be used within the recommended conditions.Absolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.IR2153(D)(S) & (PbF)NOTE:For new designs, we recommendIR’s new product IRS2153DSymbol ComponentMin.Max.UnitsR T Timing resistor value 10— k ΩC TC T pin capacitor value330—pFRecommended Component ValuesIR2153(D)(S) & (PbF)NOTE:For new designs, we recommend IR’s new product IRS2153DElectrical CharacteristicsV BIAS (V CC , V BS ) = 12V, C L = 1000 pF, C T = 1 nF and T A = 25°C unless otherwise specified. The V IN , V TH and I IN parameters are referenced to COM. The V O and I O parameters are referenced to COM and are applicable to the respective output leads: HO or LO.IR2153(D)(S) & (PbF)NOTE:For new designs, we recommendIR’s new product IRS2153DSymbolDescriptionV CC Logic and internal gate drive supply voltage R T Oscillator timing resistor input C T Oscillator timing capacitor input COM IC power and signal ground LO Low side gate driver outputV S High voltage floating supply return HO High side gate driver outputV BHigh side gate driver floating supplyLead Definitions8 Lead PDIP 8 Lead SOICIR2153DIR2153(S)NOTE: The IR2153D is offered in 8 lead PDIP only.Electrical Characteristics (cont.)IR2153(D)(S) & (PbF)NOTE:For new designs, we recommendIR’s new product IRS2153DFunctional Block Diagram for IR2153(S) Functional Block Diagram for IR2153DIR2153(D)(S) & (PbF)NOTE:For new designs, we recommend IR’s new product IRS2153DFigure 1. Input/Output Timing DiagramFigure 3. Deadtime Waveform DefinitionsR TTCLAMPR T Figure 2. Switching Time Waveform Definitions(HO)(LO)IR2153(D)(S) & (PbF)NOTE:For new designs, we recommendIR’s new product IRS2153DLEADFREE PART MARKING INFORMATIONORDER INFORMATIONBasic Part (Non-Lead Free)8-Lead PDIP IR2153 order IR21538-Lead SOIC IR2153S order IR2153S 8-Lead PDIP IR2153D order IR2153DLeadfree Part8-Lead PDIP IR2153 order IR2153PbF 8-Lead SOIC IR2153S order IR2153SPbF 8-Lead PDIP IR2153D order IR2153DPbFIR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105This product has been qualified per industrial levelData and specifications subject to change without notice. 2/8/2006Per SCOP 200-002分销商库存信息:IRIR2153SPBF IR2153PBF IR2153DPBF IR2153STRPBF IR2153IR2153SIR2153STR IR2153D。
IR1155STRPBF;IR1155SPBF;中文规格书,Datasheet资料
Feb 28, 2011IR1155SPROGRAMMABLE FREQUENCY, ONE CYCLE CONTROL PFC ICFeaturesDescription Package• PFC IC with IR proprietary “One Cycle Control” • Continuous conduction mode boost type PFC • Programmable switching frequency (48k-200kHz) • Average current mode control • Output overvoltage protection • Open loop protection • Cycle by cycle peak current limit • VCC under voltage lockout• Programmable soft start • Micropower startup • User initiated micropower “Sleep Mode”• OVP/EN pin internal filtering for higher noise immunity • 1.5A peak gate drive• Latch immunity and ESD protection The μPFC IR1155 power factor correction IC, based on IR proprietary "OneCycle Control" (OCC) technique, provides for high PF, low THD and excellent DC Bus regulation while enabling drastic reduction in component count, PCB area and design time as compared to traditional solutions. The IC is designed to operate in continuous conduction mode Boost PFC converters with average current mode control over 85-264VAC input line voltage range. Switching frequency can be programmed to anywhere between 48kHz to 200kHz based on the specific application requirement. In addition, IR1155 offers several advanced system-enabling and protective features such as dedicated pin for over voltage protection, cycle by cycle peak current limitation, open loop protection, V CCUVLO, soft-start and micropower startup/sleep-mode with IC current consumption less than 200µA. The sleep mode, invoked by pulling the OVP/EN pin low, enables compliance with standby power requirements mandated by regulations such as Energy Star, Green Power, Blue Angel etc.Qualification InformationIndustrialQualification Level Comments: This family of ICs has passed JEDEC’s Industrialqualification. IR’s Consumer qualification level is granted byextension of the higher Industrial level.Moisture Sensitivity LevelMSL2 260°C(per IPC/JEDEC J-STD-020)Machine ModelClass A(per JEDEC standard JESD22-A115)ESDHuman Body ModelClass 1B (passes 500V)(per EIA/JEDEC standard EIA/JESD22-A114)IC Latch-Up Test Class I, Level A (per JESD78)RoHS Compliant YesAbsolute Maximum RatingsParameter Symbol Min. Max. Units RemarksVCC Voltage V CC -0.3 20 VFREQ Voltage V FREQ -0.3 6.5 VISNS Voltage V ISNS -10 0.3 VVFB, OVP Voltage V FB, V OVP -0.3 6.5 VCOMP Voltage V COMP -0.3 6.5 VGATE Voltage V GATE -0.3 18 VISNS Current I ISNS -2 2 mAJunction Temperature T J -40 150 °CStorage Temperature T S -55 150 °CThermal ResistanceJunction to AmbientRθJA128 °C/WPackage Power Dissipation P D976 mWT AMB = 25°CRecommended Operating ConditionsRecommended operating conditions for reliable operation with marginParameter SymbolMin.Typ.Max.UnitsRemarks Supply Voltage V CC12 19 VJunction Temperature T J -25 125 °CSwitching Frequency F SW 48 200 kHzElectrical CharacteristicsThe electrical characteristics involve the spread of values guaranteed within the specified supply voltage and junction temperature range T J from –25 °C to 125°C. Typical values represent the median values, which are related to 25°C. If not otherwise stated, a supply voltage of V CC =15V is assumed for test condition . Supply SectionParameter Symbol Min. Typ. Max. Units Remarks VCC Turn On ThresholdV CC ON 10.65 11.3 11.95 V VCC Turn OffThreshold (Under Voltage Lock Out) V CC UVLO 9.2 9.8 10.4 V VCC Turn On/Off Hysteresis V CC HYST 1.5VOperating CurrentI CC 10 13 mA C load =1nF, F SW =181kHz6 8 mAStandby Mode (Inactive Gate, Inactive Internal Oscillator)V FB <V OLPSee State Transition Diagram Startup CurrentI CCSTART175 uA V CC =V CC ON - 0.1VSleep CurrentI SLEEP 125 200 uASleep Mode (Inactive Gate,Inactive Oscillator)- V OVP <V SLEEP,OFFSee State Transition Diagram Sleep ModeThreshold (Enable)V SLEEP,ON0.80 0.90 1.00 VIC Enable threshold,Bias on OVP pinSleep ModeThreshold (Disable)V SLEEP,OFF 0.53 0.60 0.67VIC Disable threshold, Bias on OVP pinOscillator SectionParameter SymbolMin.Typ.Max.UnitsRemarks Switching Frequency F SW 48 200kHz200khz:C=430pFapprox.48kHz: C=2nF approx. Oscillator Charge Current I OSC(CHG)200 µAOscillator DischargeCurrentI OSC(DCHG) 6.6 mAOscillator Peak V OSC PK 4 VOscillator Valley V OSC VAL 2 V5 %C=2nF,T A = 25°CInitial Accuracy F SW ACC8 %C=500pF,T A = 25°C Voltage Stability V STAB 0.2 1 % 14V < V CC < 19V Temperature Stability T STAB 2 %-25°C≤ T J≤ 125°CTotal Variation F VT 10 %Line&Temperature Maximum Duty Cycle D MAX94 99 %Minimum Duty Cycle D MIN0 %PulseSkippingProtection SectionParameter SymbolMin.Typ.Max.UnitsRemarksOpen Loop Protection (OLP) V FB Threshold V OLP 17 19 21 %V REF Bias on VFB pinOutput Over Voltage Protection (OVP) V OVP 104.5 106.5 108.5 %V REF Bias on OVP/EN pinOutput Over Voltage Protection (OVP) Reset V OVP(RST) 100.2 102.2 104.2 %V REF Bias on OVP/EN pinPeak Current LimitProtection (IPK LMT) I SNSVoltage ThresholdV ISNS-0.85 -0.77 -0.69 V Bias on ISNS pin OVP Input Bias Current I OVP(Bias)-0.2 µAInternal Voltage Reference SectionVoltage Error Amplifier SectionParameter Symbol Min. Typ. Max. Units Remarks Transconductance g m 35 50 65 µS 30 44 58 T AMB = 25°C Source CurrentI OVEA(SRC)20 44 90µA -25°C ≤T AMB ≤ 125°C -57 -43 -30 T AMB = 25°C Sink Current I OVEA(SNK)-90 -43 -20µA -25°C ≤T AMB ≤ 125°CSoft Start Delay Time t SS35 msec R GAIN = 1k Ω, C ZERO = 0.33uF,C POLE = 0.01uF V COMP Voltage (Fault) V COMP FLT 1 1.4 V@ 100µA steady statecurrentEffective V COMP Voltage V COMP EFF 4.6 4.9 5.2 V VFB Input Bias Current I IB(Bias)-0.2 µA V FB =4.9VOutput Low Voltage V OL 0.25 V Output High Voltage V OH 5 5.4 V V COMP Start Voltage V COMP START240 340 460 mVParameter Symbol Min. Typ. Max. Units Remarks Reference Voltage V REF 4.9 5 5.1 V T A = 25°C Line Regulation R REG1020mV14 V < V CC < 19V Temp Stability T STAB 0.4 % -25°C ≤ T AMB ≤ 125°C Total VariationΔV TOT4.855.1VLine & TemperatureCurrent Amplifier SectionUnitsRemarksMax.Parameter SymbolMin.Typ.DC Gain g DC 3.1 V/VCorner Frequency f C 5 kHz - Average current mode, Note 1Note1Input Offset Voltage V IO 4 16 mVI SNS Bias Current I ISNS(Bias) -57 -13 µABlanking Time T BLANK220 370 520 nsGate Driver SectionUnitsMax.Remarks Parameter SymbolMin.Typ.Gate Low Voltage V GLO 0.8 VI GATE=200mAclamp12 13 14 VGateInternalGate High Voltage V GTHV CC = 11.5V10 VRise Time t r20 nsC LOAD = 1nFFall Time t f20 nsC LOAD = 1nFC LOAD = 10nF, Note 1Output Peak Current I OPK 1.5 AGate Voltage @ Fault V G fault 0.08I GATE = 20mAVNote 1 – Guaranteed by design, but Not tested in productionLead Assignments & DefinitionsBlock DiagramVFBCOMPOVPNote: Soft-Start & Normal modes are essentially the same (differentiation above is for purpose of clarity only)VCC Undervoltage LockoutV o l t a g e o n V C C p i nTiming DiagramsOutput Protection分销商库存信息:IRIR1155STRPBF IR1155SPBF。
IR2103SPBF;IR2103PBF;IR2103STRPBF;IR2103;IR2103S;中文规格书,Datasheet资料
Data Sheet No. PD60045-OTypical ConnectionProduct SummaryHALF-BRIDGE DRIVERFeatures•Fully operational to +600VdV/dt immune••Undervoltage lockout••Cross-conduction prevention logic••Internal set deadtime•••Also available LEAD-FREEDescriptionpower MOSFET or IGBT in the high side configuration which operates up to 600 volts. 1IR2103(S ) & (PbF)IR2103(S) & (PbF)Absolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.Note 1: Logic operational for V S of -5 to +600V. Logic state held for V S of -5V to -V BS . (Please refer to the Design Tip DT97-3 for more details).IR2103(S) & (PbF) 3Static Electrical CharacteristicsV BIAS (V CC , V BS ) = 15V and T A = 25°C unless otherwise specified. The V IN , V TH and I IN parameters are referenced to COM. The V O and I O parameters are referenced to COM and are applicable to the respective output leads: HO or LO.Dynamic Electrical CharacteristicsV BIAS (V CC , V BS ) = 15V, C L = 1000 pF and T A = 25°C unless otherwise specified.IR2103(S) & (PbF)4Functional Block DiagramLead DefinitionsSymbol DescriptionHIN Logic input for high side gate driver output (HO), in phase Logic input for low side gate driver output (LO), out of phase VB High side floating supply HO High side gate drive output V S High side floating supply return V CC Low side and logic fixed supply LO Low side gate drive output COMLow side returnLINLead Assignments8 Lead PDIP 8 Lead SOICIR2103IR2103S12348765V CC HIN LIN COMV B HO V S LO12348765V CC HIN LIN COMV B HO V S LOIR2103(S) & (PbF) 5Figure 1. Input/Output Timing DiagramLINHOLOHINFigure 4. Deadtime Waveform DefinitionsFigure 2. Switching Time Waveform DefinitionsLOIR2103(S) & (PbF)6IR2103(S) & (PbF) 7IR2103(S) & (PbF)8IR2103(S) & (PbF)9IR2103(S) & (PbF)10vs Temperaturevs Voltage分销商库存信息:IRIR2103SPBF IR2103PBF IR2103STRPBF IR2103IR2103S IR2103STR。
IR1153STRPBF;IR1153SPBF;中文规格书,Datasheet资料
Feb 21, 2011IR1153SFIXED 22.2kHz FREQUENCY, µPFC ONE CYCLE CONTROLIC WITH BROWN-OUT PROTECTIONFeaturesDescription Package• PFC IC with IR proprietary “One Cycle Control” • Continuous conduction mode boost type PFC • Fixed 22.2kHz switching frequency • Average current mode control • Input line sensed brownout protection • Output overvoltage protection • Open loop protection • Cycle by cycle peak current limit• VCC under voltage lockout • Programmable soft start • Micropower startup • User initiated micropower “Sleep Mode” • 750mA peak gate drive• Latch immunity and ESD protection The μPFC IR1153 power factor correction IC, based on IR proprietary"One Cycle Control" (OCC) technique, provides for high PF, low THD and excellent DC Bus regulation while enabling drastic reduction incomponent count, PCB area and design time as compared to traditional solutions. The IC is designed to operate in continuous conduction mode Boost PFC converters with average current mode control at a fixed 22.2kHz switching frequency. The IR1153 features include input-line sensed brown-out protection, dedicated pin for over voltage protection, cycle by cycle peak current limit, open loop protection, VCC UVLO, soft-start and micropower startup current of less than 75µA. In addition, for standby power requirements, the IC can be driven into a micropower sleep mode by pulling the OVP/EN pin low where the current consumption is less than 75uA. IR1153 is available in SO-8 package.Qualification InformationIndustrialQualification Level Comments: This family of ICs has passed JEDEC’s Industrial qualification.IR’s Consumer qualification level is granted by extension of the higherIndustrial level.Moisture Sensitivity LevelMSL2 260°C(per IPC/JEDEC J-STD-020)Machine ModelClass A(per JEDEC standard JESD22-A115)ESDHuman Body ModelClass 1A(per EIA/JEDEC standard EIA/JESD22-A114)IC Latch-Up Test Class I, Level A (per JESD78)RoHS Compliant YesAbsolute Maximum RatingsStresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions is not implied. All voltages are absolute voltages referenced to COM. Thermal resistance and power dissipation are measured under board mounted and still air conditions.Parameters Symbol Min.Max.Units Remarks V CC Voltage V CC-0.3 20 V Not internally clampedISNS voltage V ISNS -10 0.3 VISNS Current I ISNS -2 2 mAV FB voltage V FB-0.3 6.5 VV OVP voltage V OVP -0.3 6.5 VV BOP voltage V BOP -0.3 9 VCOMP voltage V COMP -0.3 6.5 VGate Voltage V GATE-0.3 18 VJunction Temperature OperatingRange T J -40 150 °CStorage Temperature T S -55 150 °CThermal Resistance RθJA128 °C/WSOIC-8Package Power Dissipation P D 976 mWT AMB=25°C SOIC-8Electrical CharacteristicsThe electrical characteristics involve the spread of values guaranteed within the specified supply voltage and junction temperature range T J from – 25° C to 125°C. Typical values represent the median values, which are related to 25°C. If not otherwise stated, a supply voltage of V CC =15V is assumed for test condition.Supply SectionParameters SymbolMin.Typ.Max.Units Remarks Supply Voltage OperatingRangeV CC14 17 VV CC Turn On Threshold V CC ON 12.2 13.1 14 VV CC Turn Off Threshold(Under Voltage Lock Out)V CC UVLO 9.4 10.1 10.8 VV CC Turn On/Off Hysteresis V CC HYST 2.4 3 3.6 V7 mA C LOAD =1nF8 mA C LOAD =4.7nFOperating Current I CC3.5 5 mA OVP Mode, Inactive gateStart-up Current I CC START26 75 µA V CC=V CC ON - 0.2VSleep current I SLEEP 26 75 µAPinOVP/EN=V SLEEP-0.2VSleep Mode Threshold V SLEEP0.5 0.8 V Bias on OVP/EN pinOscillator SectionParameters SymbolMin.Typ.Max.Units Remarks20.2 22.2 24.2 T AMB=25°CFixed Oscillator Frequency f SW18.3 25 kHz -25°C < T AMB < 125°CMaximum Duty Cycle D MAX9399 % V COMP=5VMinimum Duty Cycle D MIN0 % Pulse SkippingProtection SectionParameters SymbolMin.Typ.Max.Units RemarksOpen Loop Protection (OLP)Threshold V OLP 17 19 21%V REFBias on VFB pinOutput OvervoltageProtection (OVP) Threshold V OVP 104 106 108%V REFBias on OVP/EN pinOutput Overvoltage Protection Reset Threshold V OVP(RST) 101 103 105%V REFBias on OVP/EN pinOVP Input Bias Current I OVP(Bias)-0.2 µABrown-out Protection(BOP) ThresholdV BOP0.66 0.76 0.86 V Bias on BOP pin Brown-out ProtectionEnable ThresholdV BOP(EN) 1.46 1.56 1.66 V Bias on BOP pin BOP Input Bias Current I BOP(Bias)-0.2 µAPeak Current LimitProtection ISNS Voltage Threshold (IPK LIMIT) V ISNS(PK)-0.58 -0.51 -0.44 V Bias on ISNS pinInternal Voltage Reference SectionParameters Symbol Min. Typ. Max. Units RemarksReference Voltage V REF 4.9 5 5.1 V Regulation Voltage on VFB pin,T AMB =25°C Line Regulation R REG 10 20 mV 14V < V CC < 17VTemp Stability T STAB0.4 % -25°C < T AMB < 125°C, Note 1 Total VariationΔV TOT4.835.12 V Line & TemperatureVoltage Error Amplifier SectionParameters Symbol Min. Typ. Max. Units RemarksTransconductance g m 35 49 59 µS30 44 58 T AMB =25°C Source Current (Normal Mode) I OVEA(SRC)17 80 µA-25°C < T AMB < 125°C-58 -44 -30 T AMB =25°CSink Current (Normal Mode) I OVEA(SNK)-80 -17 µA -25°C < T AMB < 125°C Soft Start Delay Time (calculated) t SS 35 msecR GAIN =8k Ω, C ZERO =0.33μF,C POLE =2nF V COMP Voltage (Fault) V COMP FLT 1 1.5 V @100uA steady stateEffective V COMP voltageV COMP EFF 4.7 4.9 5.1 VVFB Input Bias Current I FB(Bias) -0.2 µAOutput Low Voltage V OL 0.25 VOutput High Voltage V OH 5 5.45 VV COMP Start VoltageV COMP START210 325 435 mVCurrent Amplifier SectionMax.Units RemarksTyp.Min.Parameters SymbolDC Gain g DC 5.65 V/V2 kHz Average Current Mode, Note 1 Corner Frequency fCInput Offset Voltage V IO 4 16 mV Note 1ISNS Input Bias Current I ISNS(Bias)-57-13 µA170 320 470 nsBlanking Time TBLANKGate Driver SectionMax.Units Remarks Parameters SymbolMin.Typ.Gate Low Voltage V GLO 0.8 V I GATE = 200mA13.1 14.1 15.1 V CC=17V, Internally Clamped Gate High Voltage V GTH9.5 V V CC=11.5VnsC LOAD = 1nF, VCC=15V25Rise Time t rC LOAD = 4.7nF, VCC=15Vns6035C LOAD = 1nF, VCC=15VnsFall Time t fC LOAD = 4.7nF, VCC=15Vns65Output Peak Current I OPK750 mA C LOAD = 4.7nF, VCC=15V, Note 1 Gate Voltage at Fault V G fault0.08 V I GATE = 20mANote 1: Guaranteed by design, but not tested in productionBlock DiagramLead Assignments & DefinitionsIRS1144IR1153IR1144SIR1153 General DescriptionThe μPFC IR1153 IC is intended for power factor correction in continuous conduction mode Boost PFC converters operating at fixed switching frequency with average current mode control. The IC operates based on IR's proprietary "One Cycle Control" (OCC) PFC algorithm based on the concept of resettable integrator.Theory of OperationThe OCC algorithm based on the resettable integrator concept works using two loops - a slow outer voltage loop and a fast inner current loop. The outer voltage loop monitors the VFB pin and generates an error signal which controls the amplitude of the input current admitted into the PFC converter. In this way, the outer voltage loop maintains output voltage regulation. The voltage loop bandwidth is kept low enough to not track the 2xf AC ripple in the output voltage and thus generates an almost DC error signal under steady state conditions.The inner current loop maintains the sinusoidal profile of the input current and thus is responsible for power factor correction. The information about the sinusoidal variation in input voltage is inherently available in the input line current (or boost inductor current). Thus there is no need to sense the input voltage to generate a current reference. The current loop employs the boost inductor current information to generate PWM signals with a proportional sinusoidal variation. This controls the shape of the input current to be proportional to and in phase with the input voltage. Average current mode operation is envisaged by filtering the switching frequency ripple from the current sense signal using an appropriately sized on-chip RC filter. This filter also contributes to the bandwidth of the current control loop. Thus the filter bandwidth has to be high enough to track the 120Hz rectified, sinusoidal current waveform and also filter out the switching frequency ripple in the inductor current. In IR1153 this averaging function can effectively filter high ripple current ratios (as high as 40% at maximum input current) to accommodate designs with small boost inductances.The IC determines the boost converter instantaneous duty cycle based on the resettable integrator concept. The required signals are the voltage feedback loop error signal V m (which is the V COMP pin voltage minus a DC offset of V COMP,START) and the current sense signal V ISNS. The resettable integrator generates a cycle-by-cycle, saw-tooth signal called the PWM Ramp which has an amplitude V m and period 1/f SW hence a slope of V m*f SW. The current sense signal is amplified by the current amplifier by a factor g DC and fed into the summing node where it is subtracted from V m to generate the summer voltage (= V m–g DC*V ISNS). The summer voltage is compared with the PWM ramp by the PWM comparator of the IC to determine the gate drive duty cycle. The instantaneous duty is mathematically given by:D = (V m - g DC.V ISNS)/V mAssuming steady state condition where the voltage feedback loop is well regulated (V m & V OUT are DC signals) & hence instantaneous duty cycle follows the boost-converter equation (D = 1 – V IN(t)/V OUT), the control equation can be re-written as:V m = g DC.V ISNS/(V IN(t)/V OUT)Further, recognizing that V ISNS = I L(t).R SNS and re-arranging yields:g DC.I L(t).R SNS = V m V IN(t)/V OUTSince V m, V OUT & g DC are constant terms:I L(t) α V IN(t)Thus the inductor current follows the input voltage waveform & by definition power factor correction is achieved.Feature setFixed Frequency OperationThe IC is programmed to operate at a fixed frequency of 22.2kHz (Typ). Internalization of the oscillator offers excellent noise immunity even in the noisy PFC environment while integration of the oscillator into the OCC core of the IC eliminates need for digital calibration circuits. Both these factors render the gate drive jitter free thus contributing to elimination of audible noise in PFC magnetics.IC Supply Circuit & Low start-up currentThe IR1153 UVLO circuit maintains the IC in UVLO mode during start-up if VCC pin voltage is less than the VCC turn-on threshold, V CC,ON and current consumption is less than 75uA. Should VCC pin voltage should drop below V CC,UVLO during normal operation, the IC is pushed back into UVLO mode and VCC pin has to exceed V CC,ON again for normal operation. There is no internal voltage clamping of the VCC pin.User initiated Micropower Sleep modeThe IC can be actively pushed into a micropower Sleep Mode where current consumption is less than 75uA by pulling OVP/EN pin below the Sleep threshold, V SLEEP even while VCC is above V CC,ON. This allows the user to disable PFC during application stand-by situations in order to meet stand-by regulations. Since V SLEEP is less than 1V, even logic level signals can be employed.IR1153SIR1153 General DescriptionProgrammable Soft StartThe soft start process controls the rate of rise of the voltage feedback loop error signal thus providing a linear increase of the RMS input current that the PFC converter will admit. The soft start time is essentially controlled by voltage error amplifier compensation components selected and is therefore user programmable to some degree based on desired voltage feedback loop crossover frequency.Gate Drive CapabilityThe gate drive output stage of the IC is a totem pole driver with 750mA peak current drive capability. The gate drive is internally clamped at 14.1V (Typ). Gate drive buffer circuits (especially cost-effective base-followers) can be easily driven with the GATE pin of the IC to suit any system power level.System Protection FeaturesIR1153 protection features include Brown-out protection (BOP), Open-loop protection (OLP), Overvoltage protection (OVP), Cycle-by-cycle peak current limit (IPK LIMIT), Soft-current limit and VCC under voltage lock-out (UVLO).- BOP is based on direct input line sensing using a resistor divider/RC filter network. If BOP pin falls below the Brown-out protection threshold V BOP, a Brown-out situation is immediately detected the following response is executed - the gate drive pulse is disabled, VCOMP is actively discharged and IC is pushed into Stand-by Mode. The IC re-enters normal operation only after BOP pin exceeds V BOP(EN). During start-up the IC is held in Stand-by Mode until this pin exceeds V BOP(EN).- OLP is activated whenever the VFB pin voltage falls below V OLP threshold. Once open loop is detected the following response is immediately executed - the gate drive is immediately disabled, VCOMP is actively discharged and the IC is pushed into Stand-by mode. There is no voltage hysteresis associated with this feature. During start-up the IC is held in Stand-by Mode until VFB exceeds V OLP. - The OVP pin is a dedicated pin for overvoltage protection that safeguards the system even if there is a break in the VFB feedback loop due to resistor divider failure etc. An overvoltage fault is triggered when OVP pin voltage exceeds the V OVP threshold of 106%VREF. The response of the IC is to immediately terminate the gate drive output and hold it in that state. The gate drive is re-enabled only after OVP pin voltage drops below V OVP(RST) threshold of 103% VREF. The exact voltage level at which overvoltage protection is triggered can be programmed by the user by carefully designing the OVP pin resistor divider. Itis recommended NOT to set the OVP voltage trigger limit less than 106% of DC bus voltage, since this can endanger the situation where the OVP reset limit will be less than the DC bus voltage regulation point – in this condition the voltage loop can become unstable.- Soft-current limit is an output voltage fold-back type protection feature encountered when the PFC converter input current exceeds to a point where the V m voltage saturates. As mentioned earlier, the amplitude of input current is directly proportional to V m, the error voltage of the feedback loop. V m is clamped to a certain maximum voltage inside the IC (given by V COMP,EFF parameter in datasheet). If the input current causes the V m voltage to saturate at its maximum value, then any further increase in input current will cause the duty cycle to droop which immediately forces the V OUT voltage of the PFC converter to fold-back. Since the highest current is at the peak of the AC sinusoid, the droop in duty cycle commences at the peak of the AC sinusoid when the soft-current limit is encountered. In most converters, the design of the current sense resistor is performed based on soft-current limit (i.e. V m saturation) and at the system condition which demands highest input current (minimum V AC & maximum P OUT).- Cycle-by-cycle peak current limit protection instantaneously turns-off the gate output whenever the ISNS pin voltage exceeds V ISNS(PK) threshold in magnitude. The gate drive is held in the low state as long as the overcurrent condition persists. The gate drive is re-enabled when the magnitude of ISNS pin voltage falls below the V ISNS(PK) threshold. This protection feature incorporates a leading edge blanking circuit to improve noise immunity.IR1153S IR1153 Pin DescriptionPin COM: This is ground potential pin of the IC. All internal devices are referenced to this point. Pin COMP: External circuitry from this pin to ground compensates the system voltage loop and programs the soft start time. The COMP pin is essentially the output of the voltage error amplifier. The voltage loop error signal V m used in the control algorithm is derived from V COMP (V m =V COMP–V COMP,START). V COMP is actively discharged using an internal resistance to below V COMP,START threshold whenever the IC is pushed into Stand-by mode (BOP or OLP condition) or UVLO/Sleep mode. The gate drive output and logic functions of the IC are inactive if VCOMP is less than V COMP,START. Also during start-up, the VCOMP voltage has to be less than V COMP,START in order to commence operation (i.e. a pre-bias on VCOMP will not allow IC to commence operation).Pin ISNS: ISNS pin is tied to the input of the current sense amplifier of the IC. The voltage at this pin, which provides the current sense information to the IC, has to be a negative voltage wrt the COM pin. Also since the IC is based on average current mode, the entire inductor current information is necessary. A current sense resistor, located below system ground along the return path to the bridge rectifier, is the preferred current sensing method. ISNS pin is also the inverting input to the cycle-by-cycle peak current limit comparator. Whenever V ISNS exceeds V ISNS(PK) threshold in magnitude, the gate drive is instantaneously disabled. Any external filtering of the ISNS pin must be performed carefully in order to ensure that the integrity of the current sense signal is maintained for cycle-by-cycle peak current limit protection.Pin BOP (Brown-out Protection): This pin is used to sense the rectified AC input line voltage through a resistor divider/capacitor network which is in effect a voltage division and averaging network, representing a scaled down signal of the average rectified input voltage (average DC voltage + 2xf AC ripple). During start-up the BOP pin voltage has to exceed V BOP(EN) in order to enable the IC to exit Stand-by mode and enter normal operation. A Brown-out situation is detected whenever the pin voltage falls below V BOP and the IC is pushed into Stand-by mode. Subsequently the pin has to exceed V BOP(EN) for the IC to exit Stand-by and resume normal operation.Pin OVP/EN: The OVP/EN pin is connected to the non-inverting input of the OVP(OVP) overvoltage comparator shown in the block diagram and thus is used to detect output overvoltage situations. The output voltage information is communicated to the OVP pin using a resistive divider. This pin also serves the second purpose of an ENABLE pin. The OVP/EN pin can be used to activate the IC into “micropower sleep” mode by pulling the voltage on this pin below the V SLEEP threshold.Pin VFB: The converter output voltage is sensed via a resistive divider and fed into this pin. VFB pin is the inverting input of the output voltage error amplifier. The non-inverting input of this amplifier is connected to an internal 5V reference. The impedance of the divider string must be low enough that it does not introduce substantial error due to the input bias currents of the amplifier, yet high enough to minimize power dissipation. Typical value of external divider total impedance will be around 2MΩ. VFB pin is also the inverting input to the Open Loop comparator. The IC is held in Stand-by Mode whenever VFB pin voltage is below V OLP threshold.Pin VCC: This is the supply voltage pin of the IC and sense node for the undervoltage lock out circuit. It is possible to turn off the IC by pulling this pin below the minimum turn off threshold voltage, V CC(UVLO) without damage to the IC. This pin is not internally clamped.Pin GATE: This is the gate drive output of the IC. It provides a drive current of ±0.75A peak with matched rise and fall times. The gate drive output of the IC is clamped at 14.1V(Typ).分销商库存信息:IRIR1153STRPBF IR1153SPBF。
1-2577 TDS规格书
DOWSIL™ 1-2577 Conformal CoatingOne-part, translucent medium viscosity conformal coating with firm, abrasion resistant surface after cureFeatures & Benefits ∙Cures to a tough, elastoplastic, resilient, abrasion resistant surface∙Solvent-borne resin coating∙Room temperature cure, no ovens required∙Optional mild heat acceleration (after solvent flash-off) can speed in-line processing ∙UV indicator allows for automated inspection∙UL 94 V-0 flammability rating∙UL 746E Recognized∙IPC-CC-830, Amendment 1 Approved∙Mil-I-46058C, Amendment 7 Approved∙Good adhesion allows use with many low-solids (no clean) and no-lead soldersComposition ∙One part silicone resin solutionApplications ∙DOWSIL™ 1-2577 Conformal Coating is suitable for protective coating for rigid andflexible circuit boards and for PCB system Printed Wiring Board (PWB) applications,particularly those requiring toughness and abrasion resistance.Typical PropertiesSpecification Writers: These values are not intended for use in preparing specifications.Property Unit ResultOne or Two-Part OneColor (Cured) Translucent (Clear)Viscosity cPmPa-secPa-sec 950 950 1Specific Gravity (Uncured) 1.04 Specific Gravity (Cured) 1.11 Tack-Free Time at 25°C minutes 7 Tack-Free Time at 60°C/15% RH minutes 1.3 Durometer Shore A 80Typical Properties (Cont.)Property Unit ResultDielectric Strength volts/milkV/mm 400 16Volume Resistivity ohm*cm 5E+13Dielectric Constant at 100 Hz 2.74Dielectric Constant at 100 kHz 2.74Dissipation Factor at 100 Hz 0.0042Dissipation Factor at 100 kHz < 0.0002Agency Listing IPC-CC-830, Amend. 1 UL746E UL Flammability Classification NA 94 V-0Mil Specification NA MIL-I-46058C, Amend. 7NVC - Forced Draft Volatility % 72.3Description RTV conformal coatings have firm, dry surfaces for better handling and abrasion resistanceafter cure. Various viscosity versions facilitate different application methods. They requireatmospheric moisture to cure (no ovens) and their cure rates can be accelerated by mildheat. They are supplied in solvent, with low-VOC versions available and have Mil spec,IPC-CC-830 and UL recognition. Conformal coatings are materials applied in thin layersonto printed circuits or other PCB system assembly substrates.Application Methods ∙Spray∙Brush∙Flow∙Dip∙Automated pattern coatingProcessing/CuringPot Life And Cure RateAdhesion The time required to reach a tack-free state can be reduced with heat. When using heat for this purpose, allow adequate time for the solvent to evaporate prior to exposing to elevated temperatures in an air circulating oven. A typical cure schedule for 3 mil (75 micron) coatings is 10 minutes at room temperature, followed by 10 minutes at 60°C. If the coating blisters or contains bubbles, allow additional time at room temperature for the solvent to flash off prior to oven cure.The pot life of RTV conformal coatings is dependent on the application method chosen. To extend pot life, minimize exposure to moisture by using dry air or dry nitrogen blanketing whenever possible.With RTV cure coatings, adhesion typically lags behind cure and may take up to 72 hours to build in some coatings. RTV conformal coatings are formulated to provide adhesion to most common PCB system assembly substrates and materials. It is recommended that the coatings be applied to clean and dry substrates prior to application. On certain difficult, low-surface energy surfaces, adhesion may be improved by priming or by special surface treatment such as chemical or plasma etching.Handling PrecautionsUsable Life and StorageUseful Temperature RangesRepairability PRODUCT SAFETY INFORMATION REQUIRED FOR SAFE USE IS NOT INCLUDED IN THIS DOCUMENT. BEFORE HANDLING, READ PRODUCT AND SAFETY DATA SHEETS AND CONTAINER LABELS FOR SAFE USE, PHYSICAL AND HEALTH HAZARD INFORMATION. THE SAFETY DATA SHEET IS AVAILABLE ON THE WEBSITE AT OR FROM YOUR SALES APPLICATION ENGINEER, OR DISTRIBUTOR, OR BY CALLING CUSTOMER SERVICE.Special precautions must be taken to prevent moisture from contacting RTV conformal coatings. Containers should be kept tightly closed and head or air space minimized. Partially filled containers should be purged with dry air or other gases, such as nitrogen. The product should be stored in its original packaging with the cover tightly attached to avoid any contamination. Store in accordance with any special instructions listed on the product label. The product should be used by its “Use Before” date as indicated on the product label.In some cases depending on storage, there may be a hazy appearance noticed in the containers when first opened, even though they are considered clear conformal coatings. It is normal for this to occur especially if the container has been sitting stagnant for several days or weeks. This is due to the solubility of the phenyl resin in the solvent and how long the container has been sitting in storage. The coating should cure to a clear consistency regardless of this initial appearance. Mild agitation can reconstitute the material so it is consistent in appearance and viscosity. Care should be taken if the Low VOC versions are in bladder bags. A gentle rolling of the pail should correct the problem and redistribute the solvent. This should be performed 24 hours before use, so any induced bubbles from the manual agitation or rolling process have a chance to dissipate.For most uses, silicone adhesives should be operational over a temperature range of -45 to 200°C (-49 to 392°F) for long periods of time. However, at both the low and high temperature ends of the spectrum, behavior of the materials and performance in particular applications can become more complex and require additional considerations. For low-temperature performance, thermal cycling to conditions such as -55°C (-67°F) may be possible but performance should be verified for your parts or assemblies. Factors that may influence performance are configuration and stress sensitivity of components, cooling rates and hold times, and prior temperature history. At the high-temperature end, the durability of the cured silicone elastomer is time and temperature dependent. As expected, the higher the temperature, the shorter the time the material will remain useable.In the manufacture of PCB system assemblies, it is often desirable to salvage or reclaim damaged or defective units. RTV conformal coatings offer excellent reparability because they can be removed from substrates and circuitry by scraping or cutting, or by using solvents or stripping agents. If only one circuit component is to be replaced, a soldering iron may be applied directly through the coating to remove the component. Proper ventilation of any fume should be employed. After the circuit board has been repaired, the area should be cleaned by brushing or by using solvent, then dried and recoated. Heat cure coatings can be repaired with RTV coatings, but heat cure coatings may not work well when used to repair RTV coatings.Packaging InformationLimitationsHealth And Environmental InformationHow Can We Help You Today? Multiple packaging sizes are available for this product. Please contact your local distributor or representative for information on packaging size and availability.This product is neither tested nor represented as suitable for medical or pharmaceutical uses.To support customers in their product safety needs, has an extensive Product Stewardship organization and a team of product safety and regulatory compliance specialists available in each area.For further information, please see our website, or consult your local epresentative.Tell us about your performance, design, and manufacturing challenges. Let us put our silicon-based materials expertise, application knowledge, and processing experience to work for you.For more information about our materials and capabilities, visitTo discuss how we could work together to meet your specific needs, go to for a contact close to your location. has customer service teams, science and technology centers, application support teams, sales offices, and manufacturing sites around the globe. LIMITED WARRANTY INFORMATION – PLEASE READ CAREFULLYThe information contained herein is offered in good faith and is believed to be accurate. However, because conditions and methods of use of our products are beyond our control, this information should n ot be used in substitution for customer’s tests to ensure that our products are safe, effective, and fully satisfactory for the intended end use. Suggestions of use shall not be taken as inducements to infringe any patent.Dow’s sole warranty is that our products will meet the sales specifications in effect at the time of shipment.Your exclusive remedy for breach of such warranty is limited to refund of purchase price or replacement of any product shown to be other than as warranted.TO THE FULLEST EXTENT PERMITTED BY APPLICABLE LAW, SPECIFICALLY DISCLAIMS ANY OTHER EXPRESS OR IMPLIED WARRANTY OF FITNESS FOR A PARTICULAR PURPOSE OR MERCHANTABILITY.DISCLAIMS LIABILITY FOR ANY INCIDENTAL OR CONSEQUENTIAL DAMAGES.。
IRF7343TRPBF;IRF7343PBF;中文规格书,Datasheet资料
N-Ch 1.0 P-Ch -1.0
V
VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA
N-Ch 7.9 P-Ch 3.3
S
VDS = 10V, ID = 4.5A VDS = -10V, ID = -3.1A
N-Ch 2.0
I D, Drain-to-Source Current (A)
I D, Drain-to-Source Current (A)
100
VGS TOP 15V
12V
10V 8.0V
46.05V 4.0V
3.5V BOTTOM 3.0V
10
3.0V
N-Channel
IRF7343PbF
100
VGS TOP 15V
Absolute Maximum Ratings
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS IAR EAR VGS dv/dt
TJ, TSTG
Parameter
Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
IRS27951STRPBF;IRS27951SPBF;IRS27952STRPBF;IRS27952SPBF;中文规格书,Datasheet资料
Apr 5, 2011Datasheet No. – PD 97556IRS27951SIRS27952S RESONANT HALF-BRIDGE CONVERTER CONTROL ICFeatures•Simple primary-side control solution for fixed and variable frequency DC-DC resonant converters.•Max 500kHz per channel output with 50% duty cycle •Floating channel bootstrap operation up to +600Vdc •Programmable minimum and maximum switching frequency •Programmable soft start frequency and soft start time •Programmable dead time•Micropower start-up & ultra low quiescent current•Over-current protection using low side MOSFET Rds(on) •User initiated micropower “Sleep mode”•Under-voltage Lockout•Simple design with minimal component count.•Lead-freeTypical Application•LCD & PDP TV•Telecom SMPS, PC SMPS•Home Audio Systems Product SummaryTopologyHalf-BridgeV OFFSET 600 VV OUT V CCI O+ & I O- (typical) 300 mA & 900 mA Dead-time(programmable)200ns~2us Package OptionsTypical Application DiagramDC BUSTable of Contents Page Typical Application Diagram 1 Qualification Information 4 Absolute Maximum Ratings 5 Recommended Operating Conditions 5 Electrical Characteristics 6 Functional Block Diagram 8 Input/Output Pin Equivalent Circuit Diagram 9 Lead Definitions 10 Lead Assignments 10 State Diagram 12 Application Information and Additional Details 13 Package Details 23 Tape and Reel Details 24 Part Marking Information 25 Ordering Information 26DescriptionThe IRS2795(1,2) is a self oscillating half-bridge driver IC for DC-DC resonant converter applications, especially the LLC resonant half-bridge converter. The frequency and dead time can be programmed externally using two external components. The IC offers over current protection using the on state resistance of the low-side MOSFET. The IC can be disabled by externally pulling the voltage at the CT/SD pin below its enable voltage threshold.Qualification Information†Qualification LevelIndustrial††Comments: This family of ICs has passed JEDEC’s Industrial qualification. IR’s Consumer qualification level is granted by extension of the higher Industrial level.Moisture Sensitivity LevelMSL2††† 260°C(per IPC/JEDEC J-STD-020C)ESD Machine ModelClass B(per JEDEC standard EIA/JESD22-A115-A) Human Body ModelClass 2(per EIA/JEDEC standard JESD22-A114-B)IC Latch-Up Test Class I, Level A (per JESD78A)RoHS Compliant Yes†Qualification standards can be found at International Rectifier’s web site /††Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information.†††Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information.Absolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.SymbolDefinitionMin. Max. UnitsV CC Supply Voltage-0.3 25 VV B High-side Floating Supply Voltage-0.3 625 V S High-side Floating Supply Offset Voltage V B – 25 V B + 0.3 V HO High-side Floating Output Voltage V S – 0.3 V B + 0.3 V LO Low-side Output Voltage -0.3 V CC + 0.3 V CT CT/SD Pin Voltage -0.3 V CC + 0.3 V RT RT Pin Voltage-0.3 V CC + 0.3I RT RT pin source current--- 2 mA dV s /dt Allowable offset voltage slew rate -50 50 V/ns T J Operating Junction Temperature -40 150 °C T S Storage Temperature-55 150 R θJA Thermal Resistance, junction to ambient --- 150 °C/W P D Package Power Dissipation @ TA ≤ +25 ºC--- 833mWRecommended Operating ConditionsFor proper operation the device should be used within the recommended conditions.Symbol Definition Min. Max. Units V BS High-side floating supply voltage 10 VccVV S Steady-state high-side floating supply offset voltage -3.0†600 V CC Supply voltage 12 18 fsw Switching Frequency --- 500 kHz † Care should be taken to avoid output switching conditions where the V S node flies inductively below groundby more than 5 V.Recommended Component ValuesSymbol ComponentMin. Max. Units R RT RT pin resistor value 2 100 k Ω C CTCT pin capacitor value 200 2000pFElectrical CharacteristicsVCC=VBS=15V, VS=0V, CVCC=CBS=0.1uF, CLO=CHO=1nF, RT=50.5k Ω, CT=200pF and TA = 25°C unless otherwise specified. The output voltage and current (VO and IO) parameters are referenced to COM and are applicable to the respective HO and LO output leads.Symbol Definition Min Typ Max Units Test Conditions Low Voltage Supply Characteristics V CCUV + V CC turn on threshold 10.1 11 11.9 VN/AV CCUV - V CC turn off threshold (Under Voltage Lock Out)8.1 9 9.9 V CCUVHYS V CC undervoltage lockout hysteresis --- 2 --- I CCSTART V CC startup current--- 50 100 µAV CC = V CCUV+-0.1VI SLEEP Sleep mode V CC supply current --- 150 200 V CT/SD <V EN2, V BS =0V I QCC Quiescent V CC supply current --- 2 2.5 mAV EN1 < V CT/SD < 4.5VI CC46KHz V CC operating current @ f osc = 46KHz --- 3.1 4.5 RT=50.5k Ω I CC285KHzV CC operating current @ f osc = 285KHz---8.711RT=7.32k ΩFloating Supply CharacteristicsV BSUV+V BS turn on threshold 7.6 8.5 9.4 VN/AV BSUV- V BS turn on threshold(Under Voltage Lock Out)7 7.9 8.8 V BSUVHYS V BS undervoltage lockout hysteresis --- 0.6 --- I LKVS VS Offset supply leakage current --- --- 50 µAV B = V S = 600 V I BSSTART V BS startup current--- 50 100 V BS ≤ V BSUV+ - 0.1V I QBS Quiescent V BS supply current --- 50 100 V EN1 < V CT/SD < 4.5VI BS46KHz V BS operating current @ f osc = 46KHz --- 1 1.5 mA RT=50.5k Ω I BS285KHzV BS operating current @ f osc = 285KHz---5.77RT=7.32k Ω Oscillator I/O Characteristicsf SW Oscillator frequency44.346.648.9kHzCT=200pF,RT=50.5k Ω 271285 299 CT=200pF, RT=7.32k Ω V CT+ Upper CT ramp voltage threshold --- 5.0 --- V GBD V CT- Lower CT ramp voltage threshold --- 3.0 --- I CTSTART CT/SD pin startup current --- 10 --- µA V CT/SD < V EN1V RT Voltage reference at RT pin 1.92 2.0 2.08 V CM Current mirror ratio--- 1 --- A/A D Output duty cycle (LO and HO) 48 50 52 % t DTHigh/low output dead time170210250nsCT=200pFElectrical CharacteristicsVCC=VBS=15V, VS=0V, CVCC=CBS=0.1uF, CLO=CHO=1nF, RT=50.5kΩ, CT=200pF and TA = 25°C unless otherwise specified. The output voltage and current (VO and IO) parameters are referenced to COM and are applicable to the respective HO and LO output leads.Symbol Definition Min Typ Max Units Test Conditions Protection CharacteristicsR RTD RT discharge resistance ---115 ---ΩR CTD CT/SD discharge resistance --- 115 ---V EN1CT/SD rising enable voltage 0.75 1.05 1.4VV EN2CT/SD standby voltage 0.60.85 1.1V ENHYST CT/SD enable hysteresis voltage --- 0.2 ---V OCP Overcurrent VS threshold1.9 22.1VIRS27951 2.85 3 3.15 IRS27952t BLANK Leading edge blanking on LO --- 300 ---ns GBDt SD Shutdown propagation delay --- 300 --- GBD Gate Driver Output CharacteristicsV OH Gate High Voltage Vcc-1 --- ---VI GATE = 20mAVOLGate Low Voltage --- 0.05 0.15 I GATE = -20mAt r Output rise time --- 60 ---ns C LOAD=1nFt r Output rise time --- 200 --- C LOAD=4.7nF t f Output fall time --- 16 --- C LOAD=1nF t f Output fall time --- 65 --- C LOAD=4.7nFM DT Output deadtime matching|(DTLO-HO) – (DTHO-LO)|------25 nsI O+Output source current --- 300 ---mA GBD I O-Output sink current --- 900 ---R UP Pull up Resistance --- 20 ---ΩI GATE = 20mAR DOWN Pull down Resistance --- 3 --- IGATE=-20mA †GBD: Guaranteed by design.Functional Block DiagramInput/Output Pin Equivalent Circuit Diagrams:Lead DefinitionsSymbolDescriptionVCC Supply VoltageRT Oscillator timing resistorCT/SD Oscillator timing capacitor / shutdown COM GroundLO Low-side gate driveVSHigh-side gate drive return / HV current Sense HO High-side gate driveVBHigh-side floating supply voltageLead AssignmentsVCC: Power Supply VoltageThis is the supply voltage pin of the IC and sense node for the under-voltage lock out circuit. It is possible to turn off the IC by pulling this pin below the minimum turn off threshold voltage, V CCUV- without damage to the IC. This pin is not internally clamped.RT: Oscillator timing resistorThis pin provides a precise 2V reference and a resistor connected from this pin to COM defines a current that is used to set the minimum oscillator frequency. To close the feedback loop that regulates the converter output voltage by modulating the oscillator frequency, the phototransistor of an optocoupler will be connected to this pin through a resistor. The value of this resistor will set the maximum operating frequency. An R-C series connected from this pin to COM sets frequency shift at start-up to prevent excessive energy inrush (soft-start).CT/SD: Oscillator timing capacitor /ShutdownAn external capacitor CT from this pin to COM sets the dead time and frequency of the oscillator. The CT pin has sawtooth waveform, which is charged up by the current reference programmed at RT pin during rising slope and is discharged by an internal fixed 2mA current source during the falling slope. The falling time of the sawtooth defines the dead-time.At start-up, a 10uA current source charges this capacitor and the oscillator is enabled only when the voltage at this pin exceeds VEN1. The IC can also be used to enter sleep mode by externally pulling this pin below VEN2.COM: Logic and Gate drive GroundThis is ground potential pin of the integrated control circuit. All internal circuits are referenced to this point.分销商库存信息:IRIRS27951STRPBF IRS27951SPBF IRS27952STRPBF IRS27952SPBF。
74ls257中文资料
54/74S257
三态四 2 选 1 数据选择器(3S)
简要说明:
257为三态输出的四组 2 选 1 数据选择器,共有 54/74S257 和 54/74LS257 两
种线路结构型式,其主要电器特性的典型值如下(不同厂家具体值有差别):
型号 tPd(I到Z) PD
54S257/74S257 4.8ns 320mW
54LS257/74LS257 12ns 60mW
数据选择端 S 为四组共用，供四组从各自得 2 个数据（I0a,I1a. I0b,I1b. I0c,I1c. I0d,I1d）中分别选取 1 个所需数据。
只有在四组共用得三态输出控制端/E0 为低电
平时才可以选择数据，此时输出端 Za~Zd 以 TTL 制式工作。
当/E0 为高电平时，Z 处于高阻态。
利用三态输出，Z 可以直接与系统总线连接。
257 是 157 的三态型示。
引出端符号:
S 选择输入端
I0a~I0b,I1a~I1b 数据输入端
/E0 三态输出控制端(低电平有效)
Za~Zb 数据输出端
外部管腿图：
逻辑图:。
IRF6648TRPBF;IRF6648TR1PBF;中文规格书,Datasheet资料
DirectFET Power MOSFETThe IRF6648PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packag-ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,improving previous best thermal resistance by 80%.The IRF6648PbF is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as a primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes thisFig 1. Typical On-Resistance vs. Gate-to-Source VoltageFig 2. Total Gate Charge vs. Gate-to-Source VoltageDirectFET ISOMETRICMNl RoHs Compliantl Lead-Free (Qualified up to 260°C Reflow)l Application Specific MOSFET s lOptimized for Synchronous Rectification for 5V to 12V outputsl Low Conduction Lossesl Ideal for 24V input Primary Side Forward Converters l Low Profile (<0.7mm)l Dual Sided Cooling Compatiblel Compatible with existing Surface Mount TechniquesIRF6648PbF IRF6648TRPbFClick on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. T C measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature.Notes:46810121416V GS, Gate -to -Source Voltage (V)510152025303540Q G , Total Gate Charge (nC)PD - 97225AIRF6648PbFRepetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%.Notes:DD = 30V See Fig. 18GS = 0V iIRF6648PbFFig 3. Maximum Effective Transient Thermal Impedance, Junction-to-CaseUsed double sided cooling , mounting pad.Mounted on minimum footprint full size board with metalized back and with small clip heatsink.Notes:R θ is measured at T J of approximately 90°C.Surface mounted on 1 in. square Cu(still air).Mounted to a PCB with small clip heatsink (still air)Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)t 1 , Rectangular Pulse Duration (sec)T h e r m a l R e s p o n s e ( Z )IRF6648PbFFig 7.Fig 8. Typical Capacitance vs.Drain-to-Source VoltageFig 9. Normalized Typical On-Resistance vs.Drain Current and Gate Voltage0.11101001000I D , D r a i n -t o -S o u r c e C u r r e n t (A )T J , Junction Temperature (°C)T y p i c a l R (N o r m a l i z e d )110100V DS , Drain-to-Source Voltage (V)100100010000C , C a p a c i t a n c e (p F )020*********I D , Drain Current (A)51015202530T y p i c a l R D S (o n ) (m Ω)IRF6648PbFFig 13. Threshold Voltage vs. TemperatureFig 12. Maximum Drain Current vs. Case TemperatureFig 10.Fig 14. Maximum Avalanche Energy vs. Drain Current01101001000I S D , R e v e r s e D r a i n C u r r e n t (A )255075100125150T C , Case Temperature (°C)0102030405060708090I D , D r a i n C u r r e n t (A )T J , Temperature ( °C )T y p i c a l V G S (t h ), G a t e t h r e s h o l d V o l t a g e (V )255075100125150Starting T J , Junction Temperature (°C)020406080100120140160180200E A S , S i n g l e P u l s e A v a l a n c h e E n e r g y (m J )IRF6648PbFDSCurrent Sampling ResistorsFig 15a. Gate Charge Test CircuitFig 15b. Gate Charge WaveformIdQgs1Qgs2Qgd QgodrFig 16b. Unclamped Inductive WaveformsI ASFig 16a. Unclamped Inductive Test CircuitFig 17b.Switching Time WaveformsV V DS90%10%d(on)d(off)rfFig 17a. Switching Time Test CircuitV DDIRF6648PbFFig 18. Diode Reverse Recovery Test Circuit for N-ChannelHEXFET®Power MOSFETs* V GS = 5V for Logic Level DevicesPlease see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903 Visit us at for sales contact information.08/06Note: For the most current drawings please refer to the IR website at:/package/分销商库存信息:IRIRF6648TRPBF IRF6648TR1PBF。
LTC4449EDCB#TRMPBF;LTC4449EDCB#TRPBF;LTC4449IDCB#TRMPBF;LTC4449IDCB#TRPBF;中文规格书,Datasheet资料
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNITS
Input Signal (IN)
VIH(TG)
TG Turn-On Input Threshold
VIL(TG)
TG Turn-Off Input Threshold
VIH(BG)
BG Turn-On Input Threshold
FEATURES
n 4V to 6.5V VCC Operating Voltage n 38V Maximum Input Supply Voltage n Adaptive Shoot-Through Protection n Rail-to-Rail Output Drivers n 3.2A Peak Pull-Up Current n 4.5A Peak Pull-Down Current n 8ns TG Rise Time Driving 3000pF Load n 7ns TG Fall Time Driving 3000pF Load n Separate Supply to Match PWM Controller n Drives Dual N-Channel MOSFETs n Undervoltage Lockout n Low Profile (0.75mm) 2mm × 3mm DFN Package
IN = Floating
VCC Rising VCC Falling Hysteresis
4
6.5
V
300
400
μA
l 2.75 3.20 3.65
V
l 2.60 3.04 3.50
V
160
mV
IRS2573DS：HID镇流器控制IC
Ｌ３２ ： Ｔ ０ ２低压 差线 性 稳 压 器
Ｌｎ ａ 推 出 １ 低压差线性稳压器 （ Ｌ ｉｅ ｒ Ａ Ｖ ＤＯ ） Ｔ ０ ２， Ｌ３２
片温度在 安全工作范围内。 匿团圈
Ｄｉ ｏｄｅｓ ｗｗｗ． ｏｄｅ ｃ ｄｉ ｓ． ｏｍ
该器 件具 有低至 ０９ 的输 入 电压 能 力和低 至 ０２ 的可 ．Ｖ ．Ｖ
电压 、大电流轨应用 。
它还可以应用在一般的高效率 、 Ｖ 至低 Ｖ 转换 低 。 。 此外 ，
ＡＵ Ｒ ２ １ Ｓ的输 出信号与输入信号同相 ，Ｃ ＩＳ １７ ＭＯＳ施 该器件以仅为 ４ ０ Ａ的静态电流提供低功率工作模式 ， ０ｐ 停 密特触发器 输入端采 用下拉 电阻 。Ａ ＲＳ １８ ＵＩ ２ １ Ｓ的输 出信 机时静态 电流不到 １ｐ ，从而延长了手持式应用的运行时 ０Ａ 号与输入信号反相 ，ＣＭＯＳ施密特触发器输入端采用上拉 间 。
手持设备。该款双输入 ｌ Ｃ 支持 Ｕ Ｂ主机及 Ｄ Ｓ Ｃ适 配器连接 ，可分别提供符 合 Ｕ Ｂ标 准或 １ Ａ的充 Ｓ ． ２
电电流 。
控制 器和 全 桥驱 动器 。该
器件新颖 的降压 电路能够在 灯预热过程 中实 现连续导通模
式控制 ，以及 稳态 运行下 的临界导通模式 。有关 的全 桥驱 动器包含 了所 有高侧和低侧 栅极驱动器输 出 ，以及 高侧 电 源电压 的集成式 自举 ＭＯＳ Ｅ 。 Ｆ Ｔ Ｉ ２７ Ｄ ＲＳ ５ ３ Ｓ提 供 了高 度的灵活 性和 可编程性 。这种
（ Ｉ） ＨＤ 电子镇 流器控制 Ｉ 适 用于低 、中、高功 率通用工 Ｃ，
业用 Ｈ Ｄ应 用 ，包括 零售 Ｉ
店射 灯 、一般 户外照 明应
用 和 户 外街 道 照 明 。
IRS2110SPBF;IRS2110PBF;IRS2113PBF;IRS2113STRPBF;IRS2110STRPBF;中文规格书,Datasheet资料
Features•Floating channel designed for bootstrap operation•Fully operational to +500 V or +600 V•Tolerant to negative transient voltage, dV/dt immune•Gate drive supply range from 10 V to 20 V•Undervoltage lockout for both channels•3.3 V logic compatible•Separate logic supply range from 3.3 V to 20 V•L ogic and power ground ±5V offset•CMOS Schmitt-triggered inputs with pull-down•Cycle by cycle edge-triggered shutdown logic•Matched propagation delay for both channels•Outputs in phase with inputs•RoHS compliantDescriptionHIGH AND LOW SIDE DRIVERProduct SummaryV OFFSET (IRS2110)500 V max.(IRS2113)600 V max.I O+/- 2 A/2 AV OUT10 V - 20 Vt on/off (typ.)130 ns & 120 nsDelay Matching (IRS2110) 10 ns max.(IRS2113) 20 ns max. 1The IRS2110/IRS2113 are high voltage, high speedpower MOSFET and IGBT drivers with independenthigh-side and low-side referenced output channels. Pro-prietary HVIC and latch immune CMOS technologiesenable ruggedized monolithic construction. L ogic in-puts are compatible with standard CMOS or LSTTL out-put, down to 3.3 V logic. The output drivers feature ahigh pulse current buffer stage designed for minimumdriver cross-conduction. Propagation delays arematched to simplify use in high frequency applications.The floating channel can be used to drive an N-channelpower MOSFET or IGBT in the high-side configurationwhich operates up to 500 V or 600 V.IRS2110(-1,-2,S)PbFIRS2113(-1,-2,S)PbFPackages14-L ead PDIPIRS2110 and IRS211314-L ead PDIP(w/o lead 4)IRS2110-1 and IRS2113-116-L ead PDIP(w/o leads 4 & 5)IRS2110-2 and IRS2113-216-L ead SOICIRS2110S andIRS2113SData Sheet No. PD60249 2IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbFRecommended Operating ConditionsThe input/output logic timing diagram is shown in Fig. 1. For proper operation, the device should be used within the recommended conditions. The V S and V SS offset ratings are tested with all supplies biased at a 15 V differential.S S BS Note 3: When V DD < 5 V, the minimum V SS offset is limited to -V DD.Absolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured 3IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbFDynamic Electrical CharacteristicsV BIAS (V CC , V BS , V DD ) = 15 V, C L = 1000 pF, T A = 25 °C and V SS = COM unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Fig. 3.Static Electrical CharacteristicsV BIAS (V CC , V BS , V DD ) = 15 V, T A = 25 °C and V SS = COM unless otherwise specified. The V IN , V TH, and I IN parameters are referenced to V SS and are applicable to all three logic input leads: HIN, LIN, and SD. The V O and I O parameters are referenced to COM and are applicable to the respective output leads: HO or LO.Functional Block Diagram4IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbF Lead Assignments14 Lead PDIPIRS2110/IRS211316 Lead SOIC (Wide Body) IRS2110S/IRS2113S14 Lead PDIP w/o lead 4 IRS2110-1/IRS2113-1 16 Lead PDIP w/o leads 4 & 5 IRS2110-2/IRS2113-25 6IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbFFigure 1. Input/Output Timing DiagramFigure 2. Floating Supply Voltage Transient TestCircuitFigure 3. Switching Time Test Circuit Figure 4. Switching Time W aveform DefinitionFigure 6. Delay Matching W aveform DefinitionsFigure 5. Shutdown W aveform DefinitionsSFIRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbF 8IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbFFigure 10A. Turn-On Rise Timevs. TemperatureFigure 10B. Turn-On Rise Time vs.Voltage101214161820Figure 11A. Turn-Off Fall Time vs. Temperature01020304050-50-25255075100125T u r n -O f f F a l l T i m e (n s )T u r n -O f f F a l l T i m e (n s )Temperature (o C )-50-25255075100125V BIAS Supply Voltage (V)Temperature (o C )IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbFFigure 11B. Turn-Off Fall Time vs. Voltage 01020304050101214161820T u r n -O f f F a l l T i m e (n s )0.03.06.09.012.015.0-50-25255075100125L o g i c "1" I n p u t T h r e s h o l d (V )T u r n -O f f F a l l T i m e (n s )L o g i c “1” I n p u t T h r e s h o l d (V )V BIAS Supply Voltage (V)Temperature (o C ) 10IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbFFigure 16A.Offset Supply Current vs. Temperature-50-25255075100125Figure 17A. V BS Supply Current vs. Temperature0100200300400500-50-25255075100125V B S S u p p l y C u r r e n t (µA )V B S S u p p l y C u r r e n t (µA )Temperature (o C)Temperature (o C)分销商库存信息:IRIRS2110SPBF IRS2110PBF IRS2113PBF IRS2113STRPBF IRS2110STRPBF IRS2113SPBF。
SS-257 LCD Smart Soldering Iron Station 说明书
SS-257 LCD Smart Soldering Iron StationThank you for purchasing the SS-257 LCD Smart Soldering Iron Station. Please read this manual before operating the SS-257.Please store the manual in a safe, easily accessible place for future reference.Features• Large screen with backlight, LCD contrast and brightness are adjustable. • Designed with functional manual and shuffle knob for easy setting, more convenient and user friendly.•Comes with high end quad-wire heating element for heat fast recovery. • Microprocessor controlled provide best performance and accurate temperature control.• Temperature calibration function.• Auto sleep and wake up function, system lock, tip calibration and lowconsumption.•3 data memories store and recall frequently used temperature values.•Built-in DC 5V/1A USB port for power supply.• Complies with CE and ESD standard, conform to RoHS.• Comes with UL Certified Wires.• Silicone handpiece cord wire heat-resistant up to 200°C.• Resettable fuse protection design.Packing ListPlease check the contents of the Soldering station package and confirmthat all the items listed below are included.Soldering Station………..……………1 Iron Stand （with cleaning sponge ）.1Soldering Iron (1)Power Cord (1)Alligator Clip Grounding Wire (1)User’s Manual (1)B HMain menuLCD Display function description 1. Temperature of sleep mode 2.Seeting temperature 3. LCD brightness ratio 4. LCD screen contrast ratio 5. CH1 temperature memory setting 6. CH2 temperature memory setting 7. CH3 temperature memory setting 8. Current temperature 9. Temperature unit 10. Current sleep mode 11. Temperature lock 12. Current beep on or offFunction setting menuPress knob for 3 sec., it will enter the function setting menu.Setting up & operating the Soldering StationStart to use Turn on the soldering station, LCD screen will display main menu after three seconds, last set temperature will display.Temperature settingIn the main menu, press lower part of shuffle knob, move cursor to the ”SET” mode (as follow picture)，rotate around the shuffle knob inc lockwise direction to increase temperature ，counter clockwise direction to decrease temperature.Temperature memory choose In the main menu, press the center of shuffle knob twice, cursor will move to the CH1/CH2/CH3(see fig.1) ，press the left or right position of shuffle knob, choose the temperature needed.Temperature memory settingPress 3 seconds of shuffle knob into the function setting menu. Press knob and move cursor to the ”Set. Temp.” mode, press knob again to thetemperature setting (see fig 2.), rotate around the shuffle knob in c lockwisedirection to increase temperature, counter clockwise direction to decrease temperature. Press knob to the next menu, choose the “Save & Exit” save the temperature and exit the menu.Fig.1 Fig.2Soldering Iron HolderSpongeSoldering Iron Port5V/1A USB portShuffle KnobPowerSoldering IronTemperature setting Temperature unitCalibration of temp. Sleep time setting Sleep temperature setting Beep setting LCD brightness setting LCD contrast ratio settingTemperature passcodeTemperature Calibration SetThe soldering iron should be recalibrated after changing the iron, or replacing the heating element or tip.1 In the function setting menu, move cursor to the “Cal. Status.” mode then press the knob. Move cursor to the ”Real Temp” , input the realtemperature, move cursor to the “OK” (see fig 3) then press knob confirm it. Press knob to the next menu, choose the “Save & Exit” save thetemperature and exit menu.Fig.3 Fig.4 2. Calibrating the iron temperatureSetting the soldering iron station temperature to 350℃, when thetemperature stabilizes, use s oldering iron tip thermometer measurement and record tip real temperature , follow the procedure 1 input realtemperature (see Fig.4), soldering iron station will calculate temperature. 3 Cal. Status description3.1. When Cal. status display “----“(see Fig 5)，it means temperature have not calibration.Fig.5 Fig.63.2. When Cal. status display “>>>>” (see Fig 6.)，it means “Real Temp.” has calibrated and increase temperature.For example :“set.Temp”is 350℃, "Real Temp.”is 320℃, after temperature calibration as Fig 4.,temperature will rise to 350℃.3.3.When Cal. status display “<<<<” (see Fig 7.)，it means “Real Temp.” has calibrated and decrease temperature. 3.4. When Cal. status display “》 》 》” (see Fig 8.)，it means “Real Temp.” has calibrated to max. temperature, can not increase anymore, but it candecrease temperature.Fig.7 Fig.83.5 When Cal. status display “《 《 《” (see Fig 9.)，it means “Real Temp.” has calibrated to minimum temperature, can not decrease anymore, but it can increase temperature.Fig.9Auto sleep mode setting1 In the function setting menu, move cursor to the “Sleep Temp.” mode, press knob to the setting, temperature range is 30~400℃ (86~752℉), after setting, press knob to the next menu, choose the “Save & Exit” save the temperature and exit the menu.2 In the function setting menu, move cursor to the ”Sleep Timer” mode, press knob to the setting, sleep timer is adjustable from 1~360 minutes or setting “OFF” stop sleep mode activate, after setting, press knob to the next menu, choose the “Save & Exit” save the setting and exit themenu.Fig. 10Fahrenheit and Centigrade SelectionIn the function setting menu, move cursor to the “Unit” mode ，press knob to the setting, rotate around the knob , select “Fahrenheit” or “Centigrade” unit, press knob to the next menu, choose the “Save & Exit” save the setting and exit the menu. Beep settingIn the function setting menu, move cursor to the “Beep ”, press knob to the setting, rotate around the knob , switch “ON” or “OFF” mode, press knob to the next menu, choose the “Save & Exit” save the setting and exit the menu.When beep is setting “ON” mode, press knob will have key beep. When the error code appears, it will have di-di-di alarm sound. LCD screen brightness adjustmentIn the function setting menu, move cursor to the “Brightness” mode, press knob to the setting, rotate around the knob adjustment screen brightness, press knob to the next menu, choose the “Save & Exit” save the setting and exit the menu.LCD screen contrast adjustmentIn the function setting menu, move cursor to the “Contrast” mode, press knob to the setting, rotate around the knob adjustment screen contrast, press knob to the next menu, choose the “Save & Exit” save the setting and exit the menu.Temperature passcode setting1. In the function setting menu, move cursor to the “Passcode” mode ，press knob into the passcode setting(see Fig 11), input the old code and new code, press knob to the next menu, choose the “Save & Exit” save the setting and exit the menu.2. After passcode set, only temperature memory CH1/CH2/CH3 can bechoose in the main menu, other function was locked.3. In the main menu, press 3 seconds of shuffle knob, input the passcode,into the function setting menu, now can start to do any setting.4. Cancel passcode : In the main menu, press 3 seconds of shuffle knob,input the passcode, into the function setting menu, follow the 12.1 procedure, set new code “000” .5. After aetting, press knob to the next menu, choose the “Save & Exit”save the setting and exit the menu.CAUTION: Factory initial setting is “000”, this code without lockfunction.Fig11 pssscode setting Input old codeerrorChange passcode successful have not input new codeInput different new codeResetIn the function setting menu, move cursor to the “Reset” mode ，initial setting is “NO” (see Fig12)，rotate around the knob , choose “YES” (see Fig 13) and press knob confirm it, press knob to the next menu, choose the“Save & Exit” save the setting and exit the menu.Fig. 12 Fig.13 Passcode forgot and resetIf forgot passcode, turn off the power, press knob and power in the same time, LCD screen will display “input code” (see Fig. 14), input passcode “888” , the soldering iron station will reset passcode become”000”. If need to reset passcode, please followTemperature passcode settingrenew your code.Fig.14Please Scan QR code todownload complete manualSS-257E SS-257BSS-257 LCD 智能控溫焊台感謝您選購 SS-257 LCD 智能控溫焊台。
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March 29, 2010Datasheet No – PD97477IRS2573DHID BALLAST CONTROL ICFeatures• Buck, full-bridge and lamp control in one IC• Continuous/critical-conduction mode buck control • 600V high and low-side full-bridge driver • 600V high-side buck Driver• Low-side ignition FET gate driver• Integrated bootstrap FETs for full-bridge high-side drivers • Constant lamp power control• Programmable buck cycle-by-cycle over-current protection • Programmable buck output voltage limitation • Programmable lamp current limitation • Programmable full-bridge frequency • Fault latch reset input• Programmable ignition counter (21sec/64sec typical) • Programmable lamp under-voltage fault counter(197sec typical) for short-circuit or lamp does not warm-up • Fast transient lamp under-voltage event counter (16384 typical) for arc instability or end-of-life• Programmable lamp over-voltage fault counter(787sec typical) for open-circuit or lamp extinguishes• Programmable good fault reset counter (2730sec typical) • Micro-controller compatible timing thresholds • Internal 15.6V zener clamp diode on VCC • Micropower startup (150µA)•Latch immunity and ESD protection on all pinsProduct SummaryTopologyFull-Bridge & BuckV OFFSET 600 V V OUTV CCI O+, I O-, I O-Buck (typical)180mA, 260mA,400mADeadtime (typical) 1.2 µs Duty Cycle50% ±1%Package OptionsSOIC28WTypical Application DiagramBUS (-)(+)(-)Table of Contents Page Typical Application Diagram 1 Qualification Information 4 Absolute Maximum Ratings 5 Recommended Operating Conditions 6 Electrical Characteristics 7 Functional Block Diagram 10 Input / output Pin Equivalent Circuit Diagram 11 Lead Definitions 12 Lead Assignments 13 State Diagram 14 Application Information and Additional Details 15 Parameter Temperature Trends 23 Package Details 25 Package Details, Tape and Reel 26 Part Marking Information 27Ordering Information 28DescriptionThe IRS2573D is a fully-integrated, fully-protected 600V HID control IC designed to drive all types of HID lamps. Internal circuitry provides control for ignition, warm-up, running and fault operating modes. The IRS2573D features include ignition timing control, constant lamp power control, programmable full-bridge running frequency, programmable over and under-voltage protection and programmable over-current protection. Advanced protection features such as failure of a lamp to ignite, open load, short-circuit and a programmable fault counterhave also been included in the design.Qualification Information†Industrial††Qualification Level Comments: This family of ICs has passed JEDEC’s Industrialqualification. IR’s Consumer qualification level is granted byextension of the higher Industrial level.Moisture Sensitivity Level SOIC28WMSL3††† 260°C(per IPC/JEDEC J-STD-020)Machine ModelClass B(per JEDEC standard JESD22-A115)ESDHuman Body ModelClass 2(per EIA/JEDEC standard EIA/JESD22-A114)IC Latch-Up Test Class I, Level A (per JESD78)RoHS Compliant Yes†Qualification standards can be found at International Rectifier’s web site /††Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information.†††Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information.Absolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltageparameters are absolute voltages referenced to COM, all currents are defined positive into any lead. Thethermal resistance and power dissipation ratings are measured under board mounted and still air conditions.Symbol Definition Min.Max.Units V B1High-Side Floating Supply Voltage -0.3 625V B2High-Side Floating Supply Voltage -0.3 625V BB High-Side Floating Supply Voltage -0.3 625V S1High-Side Floating Supply Offset Voltage V B1 – 25 V B1 + 0.3V S2High-Side Floating Supply Offset Voltage V B2 – 25 V B2 + 0.3V SB High-Side Floating Supply Offset Voltage V BB – 20 V BB + 0.3V HO1 High-Side Floating Output Voltage V S1 - 0.3 V B1 + 0.3V HO2High-Side Floating Output Voltage V S2 - 0.3 V B2 + 0.3V BUCK High-Side Floating Output Voltage V SB - 0.3 V BB + 0.3V LO1 Low-Side Output Voltage -0.3 V CC + 0.3V LO2Low-Side Output Voltage -0.3 V CC + 0.3V IGN Low-Side Output Voltage -0.3 V CC + 0.3V CS Buck Current Sense Pin Voltage V SB - 0.3 V BB + 0.3V CT Full-Bridge Oscillator Timing Pin Voltage -0.3 V CC + 0.3V TIGN Ignition Timer Pin Voltage -0.3 V CC + 0.3V TCLK Fault Timer Pin Voltage -0.3 V CC + 0.3V RST Reset Pin Voltage -0.3 V CC + 0.3V VSENSE Lamp Voltage Sense Pin Voltage -0.3 V CC + 0.3V ISENSE Lamp Current Sense Pin Voltage -0.3 V CC + 0.3V OC Current Limitation Pin Voltage -0.3 V CC + 0.3V OV Voltage Limitation Pin Voltage -0.3 V CC + 0.3VI OMAX Maximum allowable output current (HO1, HO2, BUCK,LO1, LO2, IGN) due to external power transistor millereffect-500 500I BB Buck High-side Supply Current -20 20I CS Buck Current Sense Pin Current -5 5I ICOMP Buck Compensation Pin Current -5 5I PCOMP Buck Compensation Pin Current -5 5I ZX Buck Zero-crossing Detection Pin Current -5 5I TOFF Buck Off-time Pin Current -5 5I CC Supply current†-20 20 I IREF Current Reference Pin Current -5 5mA dV S/dt Allowable offset voltage slew rate -50 50 V/nsP D Package power dissipation @ T A≤ +25ºCSOIC28W --- 1.6WRΘJAThermal resistance, junction to ambient SOIC28W --- 78 ºC/WTJJunction temperature -55 150TSStorage temperature -55 150T L Lead temperature (soldering, 10 seconds) --- 300ºC†This IC contains a voltage clamp structure between the chip VCCand COM which has a nominal breakdown voltage of 15.6 V. Please note that this supply pin should not be driven by a DC, low impedance powersource greater than the VCLAMP specified in the Electrical Characteristics section.Recommended Operating ConditionsFor proper operation the device should be used within the recommended conditions.Symbol Definition Min. Max. Units VB1-VS1 High Side Floating Supply Voltage VB1UV+ VCLAMP1 VB2-VS2 High Side Floating Supply Voltage VB2UV+ VCLAMP1 VBB-VSB High Side Floating Supply Voltage VBBUV+ VCLAMP1VS1,VS2,VSBSteady State High-side Floating Supply Offset Voltage -1† 600 VCC Supply Voltage VCCUV+ VCLAMP1 VICC VCC Supply Current †† 10 I BB V BB Supply Current ††† 10ICS Buck Current Sensing Pin Current -1 1 IZX Buck Zero-crossing Sensing Pin Current -1 1 mACTOFF Buck Off-time Pin Capacitor 470 --- pF CT Full-bridge Oscillator Timing Pin Capacitor 10 ---CTIGN Ignition Timer Pin Capacitor 10 ---CTCLK Fault Counter Pin Capacitor 10 --- nF RIREF Current Reference Pin Resistor 10 --- kOhm VRST Reset Pin Voltage 0 VCC VVSENSE Voltage Sense Pin Voltage 0 VCCVISENSE Current Sense Pin Voltage 0 VCCVOC Current Limitation Pin Voltage 0 VCC VOV Voltage Limitation Pin Voltage 0 VCC V TJ Junction Temperature -40 125 ºC† Care should be taken to avoid output switching conditions where the V S node flies inductively belowground by more than 5 V.†† Enough current should be supplied to the V CC pin to keep the internal 15.6 V zener diode clamping thevoltage at this pin.††† Enough current should be supplied to the V BB pin to maintain a V BBSB voltage magnitude of VCLAMP1.Electrical CharacteristicsV CC = V B1S1 = V B2S2 = V BBSB = V BIAS = 14V +/- 0.25V, C LO1 = C LO2 = C IGN = C HO1 = C HO2 = BUCK = 1000pF, R IREF = 20kOhm, R OC = 10kOhm, R OV = 50kOhm, V RST = COM, CS = VSB, CT = TIGN = TCLK = VSENSE = ISENSE = PCOMP = ICOMP = ZX = TOFF = COM, T A = 25C unless otherwise specified. Symbol Definition Min Typ Max Units Test Conditions Supply CharacteristicsV CCUV + V CC Supply Undervoltage Positive GoingThreshold9.5 10.5 11.5V CC rising from 0V V CCUV - V CC Supply Undervoltage Negative Going Threshold 8.5 9.5 10.5 V CC falling from 14V V UVHYS V CC Supply Undervoltage Lockout Hysteresis0.5 1.0 1.5VI QCCUV UVLO Mode V CC Quiescent Current --- 150V CC = 9VI QCCFLT Fault Mode V CC Quiescent Current --- 420 µAI QCC Quiescent V CC Supply Current --- 3.5 --- I CCGMGeneral Mode V CC Supply Current---5.0---mAVICOMP = VPCOMP = 4V, CTOFF=1nF, CT=47nF,CTIGN=1uF, CTCLK=0.12uF,VSENSE=0.8VV CLAMP1 V CC Zener Clamp Voltage14.6 15.6 16.6 V I CC = 10mA Full-Bridge Floating Supply Characteristics I QB1S1_0 Quiescent V BS Supply Current --- 50 ---V HO1 = V S1I QB1S1_1 Quiescent V BS Supply Current--- 80 --- µAV HO1 = V B1V B1S1UV+ V B1S1Supply Undervoltage PositiveGoing Threshold8.0 9.0 10.0V B1S1 rising from 0VV B1S1UV-V B1S1 Supply Undervoltage NegativeGoing Threshold7.0 8.0 9.0 VV B1S1 falling from 14VI LKVS1 V S1 Offset Supply Leakage Current --- --- 50 V B1 = V S1 = 600V I QB2S2_0 Quiescent V BS Supply Current --- 50 --- V HO2 = V S2 I QB2S2_1 Quiescent V BS Supply Current--- 80 --- µA V HO2 = V B2V B2S2UV+ V B2S2Supply Undervoltage PositiveGoing Threshold 8.0 9.0 10.0V B2S2 rising from 0VV B2S2UV- V B2S2Supply Undervoltage NegativeGoing Threshold7.0 8.0 9.0VV B2S2 falling from 14V I LKVS2 V S2 Offset Supply Leakage Current --- --- 50 µAV B2 = V S2 = 600V Buck Floating Supply Characteristics V CLAMP2 V BB Zener Clamp Voltage 19.8 20.8 21.8 V I BB = 10mA I QBBSB_0 Quiescent V BBSB Supply Current --- 360 µAV BUCK = V SB I BBSBV BBSB Supply Current--- 1 --- mA VICOMP = VPCOMP = 4V,CTOFF = 1nF V BBSBUV+ V BBSBSupply Undervoltage PositiveGoing Threshold 8.0 9.0 10.0V BBSB rising from 0VVICOMP = VPCOMP = 0.5V V BBSBUV- V BBSBSupply Undervoltage NegativeGoing Threshold7.0 8.0 9.0VV BBSB falling from 14V VICOMP = VPCOMP = 0.5VI LKVSB V SB Offset Supply Leakage Current --- --- 50 µAV BB = V SB = 600V V CS CS pin over-current threshold 1.03 1.18 1.33 Vt BLANK CS pin current-sensing blank time50 120 190 nsVICOMP = VPCOMP = 4VElectrical CharacteristicsV CC = V B1S1 = V B2S2 = V BBSB = V BIAS = 14V +/- 0.25V, C LO1 = C LO2 = C IGN = C HO1 = C HO2 = BUCK = 1000pF, R IREF = 20kOhm, R OC = 10kOhm, R OV = 50kOhm, V RST = COM, CS = VSB, CT = TIGN = TCLK = VSENSE = ISENSE = PCOMP = ICOMP = ZX = TOFF = COM, T A = 25C unless otherwise specified. Symbol Definition Min Typ Max Units Test Conditions Buck Control CharacteristicsI PCOMP SOURCE OTA1 Error Amplifier Output Current Sourcing 28 40 52 VPCOMP=7VV VSENSE = V ISENSE = V VSENSE PCOMP=0uA – 0.3V I PCOMPSINKOTA1 Error Amplifier Output Current Sinking28 40 52VPCOMP=7VV VSENSE = V ISENSE = V VSENSE PCOMP=0uA + 0.3V I ICOMP SOURCE OTA2 Error Amplifier Output Current Sourcing28 40 52 VICOMP=7V V ISENSE =V ISENSE ICOMP=0uA – 0.5V I ICOMPSINKOTA2 Error Amplifier Output Current Sinking284052uAVICOMP=7V V ISENSE =V ISENSE ICOMP=0uA + 0.5VV COMPOHOTA1,2 Error Amplifier Output Voltage Swing (high state)--- 12.5 --- V I PCOMP =I PCOMP_SOURCE – 10uA,or I ICOMP =I ICOMP_SOURCE – 10uAK MULTInternal Multiplier GainK MULT = VIREF/ ( 2x V VSENSE x V ISENSE )--- 2.0 --- V VSENSE =V VSENSE (PCOMP = 0uA),V ISENSE = 500mV PSENSE V VSENSE x V ISENSE0.4650.50 0.535 V VSENSE = 1VV ISENSE = 500mVV PCOMPTH PCOMP pin buck on/off threshold voltage--- 0.2 --- VICOMP = 2V V ICOMPTH- ICOMP pin buck off threshold voltage --- 0.2 --- VPCOMP = 2V V ICOMPTH+ ICOMP pin buck on threshold voltage--- 0.5 --- VPCOMP = 2VV ZX ZX pin Comparator Threshold Voltage --- 2.0 --- V VPCOMP = VICOMP = 7V V ZXhys ZX pin Comparator Hysteresis--- 400 --- mV VPCOMP = VICOMP = 7VV ZXclamp ZX pin Clamp Voltage (high state) --- 6.5 --- V I ZX = 5mA I TOFF TOFF pin Output Current91 110 129 uA VBUCK = VSBV TOFF TOFF pin Comparator Threshold Voltage 1.93 2.05 2.17 V VPCOMP = VICOMP = 7V CTOFF = 1nFFull-Bridge Oscillator Characteristics f OSC Full-Bridge oscillator frequency 160 200 240 Hz d Oscillator duty cycle 49 50 51 % td LO1,2 LO1, LO2 output deadtime 0.8 1.2 1.5 td HO1,2 HO1, HO2 output deadtime 0.8 1.2 1.5 us C CT = 47nF V CT+ CT pin upper threshold voltage --- 4.0 --- V CT- CT pin lower threshold voltage --- 2.0 --- VI CTSOURCE CT pin sourcing current--- 80 ---V CT = 1.5VI CTSINKCT pin sinking current--- 80 --- uAV CT = 4.5V Ignition Timer Characteristics T IGNON IGN pin on-time 18 21 24 T IGNOFF IGN pin off-time 57 64 71 sec C TIGN = 1uF MODE = IGN V TIGN+ TIGN pin upper threshold voltage --- 4.0 --- V TIGN- TIGN pin lower threshold voltage --- 2.0 --- VI TIGNSOURCE TIGN pin sourcing current--- 6 ---V TIGN = 1.5VI TIGNSINKTIGN pin sinking current---6---uAV TIGN = 4.5VElectrical CharacteristicsV CC = V B1S1 = V B2S2 = V BBSB = V BIAS = 14V +/- 0.25V, C LO1 = C LO2 = C IGN = C HO1 = C HO2 = BUCK = 1000pF, R IREF = 20kOhm, R OC = 10kOhm, R OV = 50kOhm, V RST = COM, CS = VSB, CT = TIGN = TCLK = VSENSE = ISENSE = PCOMP = ICOMP = ZX = TOFF = COM, T A = 25C unless otherwise specified. Symbol Definition Min Typ Max Units Test Conditions Fault Counter Characteristics T CLK CLK pin oscillation period --- 12.0 --- ms C TCLK = 0.12uF V TCLK+ TCLK pin upper threshold voltage --- 4.0 ---V TCLK- TCLK pin lower threshold voltage --- 2.0 --- VI TCLKSOURCETCLK pin sourcing current --- 40 ---V TCLK = 1.5V I TCLKSINKTCLK pin sinking current --- 40 ---uAV TCLK = 4.5V t GOOD GOOD COUNTER time --- 2850 ---C TIGN = 1uF,V VSENSE = 0.8Vt UVFAULT VSENSE pin under-voltage fault counter time187 197 207C TCLK = 0.12uF, V VSENSE < VOV(1/7.5) t OVFAULT VSENSE pin over-voltage fault countertime 737 787 837sec C TCLK = 0.12uF, V VSENSE > VOV(2/5) n EVENTSVSENSE pin fast transient under-voltagefault events---16384--- V VSENSE = pulses(ton=10us, toff=5us,ampl.= 0.8V to COM)V RST+ RST pin rising threshold voltage --- --- 2.5 MODE = FAULTV RST- RST pin falling threshold voltage 1.5 --- --- VMODE = UVLO Reference Current Characteristics V IREF IREF pin reference voltage 1.95 2.00 2.05 V R IREF = 20kOhm Voltage Sensing CharacteristicsV OV VSENSE pin buck voltage limitationthreshold2.3 2.55 2.8V OV(2/5) VSENSE pin over-voltage threshold 0.92 1.05 1.18 V OV(1/7.5) VSENSE pin under-voltage threshold 0.2980.35 0.403VR OV = 50kOhm Current Limitation CharacteristicsV ISENSE ISENSE pin current limitation threshold 460 520 580 mV R OC = 10kOhm Gate Driver Output Characteristics (HO1, HO2, LO1, LO2, BUCK, IGN pins) V OL Low-Level output voltage --- COM ---V OH High-Level output voltage --- VCC --- VI O = 0 T r Turn-On rise time --- 120 220T f Turn-Off fall time --- 50 100 nsIO+HO1, HO2, LO1, LO2, IGN SourceCurrent--- 180 --- IO- HO1, HO2, LO1, LO2, IGN Sink Current --- 260 ---IO+ BUCK Source Current --- 180 ---VICOMP = VPCOMP = 10V IO- BUCK Sink Current --- 400 --- mA Bootstrap MOSFET Characteristics (VB1, VB2 pins) V B_ON VB voltage when BS FET is on 13.0 13.7 --- V I B_CAP VB source current when BS FET is on --- 55 --- VBS=0VI B_10V VB source current when BS FET is on --- 12 ---mA V VB =10V CT = 0V, CT = 6VFunctional Block Diagram分销商库存信息:IRIRS2573DSTRPBF IRS2573DSPBF。