MOS管BSS123

VDS RDS(on) ID
100 V 6Ω
0.17 A
Gate pin1
Drain pin 3
SOT23
3
Source pin 2
2 1 VPS05161
Type BSS123 BSS123
Package SOT23 SOT23
Ordering Code Q62702-S512 Q67000-S245
Unit A
kV/µs V W °C
Thermal Characteristics Parameter
Rev. 1.0
Characteristics Thermal resistance, junction - ambient
at minimum footprint
BSS123
Symbol
Values
Ciss
10 -1
IF
C
Coss 10 1
Crss
10 0 0 4 8 12 16 20 24 28 V 36
VDS
10 -2
10 -3 0
Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
2.2
V
98% 1.8
V GS(th)
1.6
1.4
typ.
1.2
1 2%
0.8
0.6
0.4
0.2
0
-60
-20
20
60
100 °C 160
Tj
12 Forward character. of reverse diode
IF = f (VSD) parameter: Tj
10 0 BSS123
pF
A
10 2
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VDS
7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: Tj = 25 °C
180
Tj
Rev. 1.0
BSS123
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved.
VGS
Power dissipation
Ptot
TA=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Tj , Tstg
Value
0.17 0.14 0.68
6
±20 Class 1
0.36
-55... +150 55/150/56
IS
forward current
Inv. diode direct current, pulsed ISM
Inverse diode forward voltage VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
TA=25°C
VGS=0, IF = IS VR=50V, IF=lS, diF/dt=100A/µs
1.8
IDSS IGSS
µA
-
- 0.01
-
-
5
-
-
10 nA
RDS(on)
-
4
10 Ω
RDS(on)
-
3
6
VGS=10V, ID=0.17A
Rev. 1.0
BSS123
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
0 0 20 40 60 80 100 120 °C 160
TA
3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C
10 1 BSS123 A
ID
10 0 10 -1
/ID
= V DS R DS(on)
tp = 120.0µs 1 ms 10 ms
Rev. 1.0
BSS123
5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 °C, VGS
ID
0.7 A 10V
5V
0.6
4.5V 4.1V
0.55 3.9V
3.7V 0.5 3.5V
0.45 3.1V 2.9V
0.4 2.3V
0 0 0.1 0.2 0.3 0.4 0.5 A 0.7
ID
Rev. 1.0
BSS123
9 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 0.17 A, VGS = 10 V
BSS123
24
Ω
RDS(on)
20
Tape and Reel Information E6327: 3000 pcs/reel E6433: 10000 pcs/reel
Marking SAs SAs
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
-
- 0.17 A
-
- 0.68
- 0.81 1.2 V
- 27.6 41.1 ns
- 10.5 15.7 nC
Rev. 1.0
BSS123
P tot
1 Power dissipation Ptot = f (TA)
BSS123
0.38 W
0.32
0.28
0.24
0.2
0.16
0.12
0.08
0.04
Gate-source leakage current
VGS=20V, VDS=0
Drain-source on-state resistance
VGS=4.5V, ID=0.13A
Drain-source on-state resistance
V(BR)DSS 100
-
-V
VGS(th)
0.8
1.4
10 3 BSS123 K/W
10 2
ZthJA
10 1
10 0
10 -1
10 -2
single pulse
D = 0.50 0.20 0.10 0.05 0.02 0.01
10
-3
10
0
10 1
10 2
V
10 3
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
VDS
tp
Drain-source breakdown voltage
VGS=0, ID=250µA
Gate threshold voltage, VGS = VDS
ID=50µA
Zero gate voltage drain current
VDS=100V, VGS=0, Tj=25°C VDS=100V, VGS=0, Tj=150°C
VDD=80V, ID=0.17A, VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=80V, ID = 0.17 A
- 0.055 0.082 nC - 0.77 1.15 - 1.78 2.67
-
2.6
-V
Reverse Diode
Inverse diode continuous
18
16
14
12
10
8
98%
6
4 typ
2
0
-60 -20 20
60 100 °C
180
Tj
11 Typ. capacitances
C = f (VDS) parameter: VGS=0, f=1 MHz, Tj = 25 °C
10 3
10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS; ID =50µA
Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Dynamic Characteristics
Transconductance
gfs
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time