ESD与TCAD-Silvaco仿真(浙江大学)

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1.1：TCAD总体简介
TCAD－Technology Computer Aided Design Tsuprem/Medici（Avanti，被Synopsys收购） Athena/Atlas（Silvaco公司） Dios/Dessis（Ise公司，被Synopsys 收购）
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1.2：Tsuprem4/Medici
1. There is only one command per line 2. The line can be up to 80 characters long. If it s longer, we can continue in the next line, but the last character in the previous line must be a “+” character.
1. 单元1：TCAD简介 2. 单元2：ESD的TCAD仿真简介 3. 单元3：ESD的仿真评价体系
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单元1
• • • • 1.1：TCAD总体简介 1.2：Tsuprem4/Medici 1.3：Athena/Atlas 1.4：Dios/ Dessis （ISE-TCAD）
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• TYPES OF COMMANDS
There are two types of commands 1. Declaration (used to set parameters) 2. Action (execution – used to perform a process step)
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CREATE A SIMULATION
MESH Initiates a mesh and must appear first when defining a structure.
Used to specify exact locations of X.MESH mesh lines – produces a rectangular grid which can be reduced in density Y.MESH by using ELIMINATE to remove ELIMINATE excess nodes away from area of interest
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REGION
ELECTRODE Adds location of electrodes to structure
RENAME
Renames electrodes or regions Allows addition of doping information either by creating simple profiles or inputting from a process simulator Allows regridding of mesh based on some internalquantities 共163页
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Used to transfer surface features and doping profiles from TSUPREM4 TSUPREM4 onto an existing MEDICI mesh STITCH New command to allow multiple TSUPREM4 files to be used Used to define regional properties where no material data already exists
robustness该esd防护器件的pmaxt图共163页143该esd防护器件的热源共163页144热源放大图共163页145注入功率和极值温度的经验模型共163页146二次热电击穿的经验判决公式共163页147scr防护器件正向电压达到峰值时t3scr器件内部的极值功率密度达到最大值时t5时的功率分布图t3t5scr器件内部的极值功率密度达到次最大值时的功率分布图t6scr器件内部的极值功率密度达到第三个峰值时的功率分布图t7共163页148t1时刻的功率分布共163页149t2时刻的功率分布共163页150t3和t5时刻的功率分布共163页151t4时刻的功率分布共163页152t6时刻的功率分布共163页153t7时刻的功率分布共163页15436
PROFILE REGRID
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Some Statements` • Regrid statement The regrid statement can be used to refine a grid for greater accuracy. 1. Specify quantity to be used e.g potential, electric field, min.carr 2. Refinement criterium e.g ratio=2
ESD与TCAD仿真
报告人：浙大微电子 崔强 Email: qiangcui1984@
Welcome!
• 热烈欢迎各位参加本次讲座的学员。由于 本人水平有限，在座的各位如果有什么问 题，请立刻打断我。
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Welcome!
• 本次讲座分3个小节，中途有两次休息， 欢迎大家和我探讨。
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1.2 .2：Medici
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Features： Medici solves Poisson’s equation and the current continuity of electrons and holes in two dimensions These equations can be extended to include the heat equation and the energy-balance equations The following modes of analysis can be considered: DC, AC, Transient
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• Advanced Application Modules 1. Lattice temperature AAM – solves the heat equation 2. Optical Device AAM – enhanced radiation effects, ray tracing 3. Heterojunction device AAM – conduction across a material boundary with discontinuous energy gap
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Older statements whose function is no longer so necessary. SPREAD SPREAD allows the creation of a LOCOS shaped structure on a rectangular BOUNDARY mesh and BOUNDARY allows a set of coordinates to be input to define a region’s topography.
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• 1. 2. 3.
CREATE A SIMULATION Setting up the initial grid Models and coefficients (method) Process statements (deposition, expose, develop, etch, implant, diffusion, epitaxy) 4. Electrical calculations in TSUPREM-4 5. Extracting results (Non-electrical) from TSUPREM-4
1. 2. 3. 4. 5. 6.
CAPABILITIES
TSUPREM-4 simulates silicon IC process fabrication Ion Implantation Epitaxial growth Diffusion Oxidation of silicon and polysilicon Etching and deposition Silicidation of silicon and polysilicon
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• Doping and structure information can either be input from a process simulator e.g. TSUPREM4 or generated within MEDICI • A wide range of mobility and recombination/generation models available • Output to parameter extraction programs such as Aurora possible
FILES ASSOCIATED WITH RUNNING TSUPREM-4 SIMULATIONS Input file (*.inp) Output file (*.out – appended automatically by program) TSUPREM-4 structure file (*.str) MEDICI/DAVINCI file (*.dev) Universal (TIF) format file (*.tif)
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4.Programmable device AAM – allows a charge boundary condition on a floating electrode 5.Circuit Analysis AAM – allows devices to be treated as circuit elements in a SPICE type circuit 6.Anisotropic device AAM – allows anisotropic material parameters useful in the treatment of SiC type applications
“Regrid doping log ratio=2 in.file=test.dop + smooth=1”
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• RENAME ELECTRODES When electrodes are transferred from TSUPREM-4 to MEDICI, they will be numbered sequentially. It is often convenient to rename them with names easier to remember. “Rename electrode oldname=1 newname=source Rename electrode oldname=2 newname=drain”
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• Full post processing capabilities including plotting internal quantities, terminal characteristics • Extract capability makes calculations with a wide range of parameters possible for pre and post processing solutions. A target parameter can be identified for optimization
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• SPECIFICATIONS
1. Two-dimensional 2. Supports up to 40,000 nodes 3. Written in C
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• COMMAND INPUT LANGUAGE The input language is made up of commands and corresponding parameters
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PARAMETERS There are three types of parameters 1. Numerical (e.g. temp=1000) 2. Logical (e.g. clear) 3. Character (e.g. “NMOS3A”)
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1. 2. 3. 4. 5.
• Tsuprem4/Medici是Avanti公司的二维工艺、 器件仿真集成软件包。Tsuprem4是对应的 工艺仿真软件，Medici是器件仿真软件。在 实践中，可以将Tsuprem4的工艺仿真的结 果导入到Medici中，从而进行较为精确的仿 真。
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1.2 .1：Tsuprem4
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