中等功率晶体管技术规格书Medium Power Transistor

Transistors Medium Power Transistor (32V, 0.5A)
z Features 1)High I CMax . I CMax . = 0.5A 2)Low V CE(sat).
Optimal for low voltage operation. 3) Complements the 2SA1036K.
z Structure
Epitaxial planar type NPN silicon transistor
z External dimensions (Units : mm)
2SC2411K
(1) Emitter (2) Base (3) Collector
ROHM : SMT3
EIAJ : SC-59
0 ∼ 0.1
2.8±0.2
1.60.3 ~ 0.6
1.10.8±0.1
0.150.42.9±0.21.9±0.20.950.95+0.2−0.1
−0.1+0.2
+0.1−0.06
+0.1−0.05
(2)
(1)
(3)Abbreviated symbol : C ∗
All terminals have same dimensions
∗ Denotes h FE
z Absolute maximum ratings (T a = 25°C)
Parameter
V CBO V CEO V EBO P C Tj Tstg
40V V V A W °C °C
3250.5*
I C 0.2150−55 to +150
Symbol Limits Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Collector power dissipation Junction temperature Storage temperature
P C must not be exceeded.
*
Transistors z Electrical characteristics (T a = 25°C)
Parameter
Symbol BV CBO BV CEO BV EBO I CBO I EBO h FE V
CE (sat)
f T Cob
Min.40325−−120−−−
−−−−−−−2506.5
−−−113900.6−−
V I C = 100µA I C = 1mA I E = 100µA V CB = 20V V EB = 4V
V CE = 3V, I C = 100mA I C /I B = 500mA/50mA
V CE = 5V, I E = −20mA, f = 100MHz V CB = 10V, I E = 0A, f = 1MHz
V V µA µA −V MHz pF
Typ.Max.Unit Conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio
Collector-emitter saturation voltage Transition frequency Output capacitance
z Packaging Specifications and h FE
h FE values are classified as follows:
Item Q R h FE
120 to 270
180 to 390
z Electrical characteristic curves
C O L L E C T O R C
U R R E N T : I C (m A )
BASE TO EMITTER VOLTAGE : V BE (V)Fig.1 Grounded emitter propagation
characteristics
C O L L E C T O R C U R R E N T : I C (m A )
COLLECTOR TO EMITTER VOLTAGE : V CE (V)Fig.2 Grounded emitter output
characteristics ( Ι )
C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )
COLLECTOR CURRENT : I C (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current
Transistors
C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )
COLLECTOR CURRENT : I C (mA)Fig.4 Collector-emitter saturation voltage
vs. collector current
D C C U R R
E N T G A I N : h
F E
COLLECTOR CURRENT : I
C (mA)Fig.5 DC current gain vs. collector current
Fig. 6 Gain bandwidth product vs.
emitter current
EMITTER CURRENT : I E (mA)
T R A N S I T I O N F R E Q U E N C Y : f T (M H z )
−
COLLECTOR TO BASE VOLTAGE : V CB (V)EMITTER TO BASE VOLTAGE : V EB (V)
C O L L E C T O R O U T P U T C A P A C I T A N C E : C o b (p F )E M I T T E R I N P U T C A P A C I T A N C E : C i b (p F )
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs. emitter-base voltage。