ZETEX ZXM64P03X 说明书

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SUMMARY
V (BR)DSS =-30V; R DS(ON)=0.075⍀; I D =-3.8A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.FEATURES •Low on-resistance •Fast switching speed •Low threshold •Low gate drive
•Low profile SOIC package APPLICATIONS
•DC - DC Converters
•Power Management Functions •Disconnect switches •
Motor control
ORDERING INFORMATION DEVICE REEL SIZE (inches)
TAPE WIDTH (mm)QUANTITY PER REEL ZXM64P03XTA 712mm embossed 1000 units ZXM64P03XTC
13
12mm embossed
4000 units
DEVICE MARKING •
ZXM4P03
30V P-CHANNEL ENHANCEMENT MODE MOSFET
MSOP8
ZXM64P03X
1
23
4
8
765S S S
G
D D
D D 145
PROVISIONAL ISSUE A - JULY 1999
查询ZXM64P03XTA供应商
ZXM64P03X
146
THERMAL RESISTANCE
PARAMETER
SYMBOL VALUE UNIT Junction to Ambient (a)R θJA 113°C/W Junction to Ambient (b)
R θJA
70
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t р10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -30V Gate- Source Voltage
V GS ± 20V Continuous Drain Current (V GS =4.5V; T A =25°C)(b)
(V GS =4.5V; T A =70°C)(b)I D -3.8-3.0A Pulsed Drain Current (c)
I DM -19A Continuous Source Current (Body Diode)(b)
I S -2.3A Pulsed Source Current (Body Diode)(c)
I SM -19A Power Dissipation at T A =25°C (a)Linear Derating Factor
P D 1.18.8W mW/°C Power Dissipation at T A =25°C (b)Linear Derating Factor
P D 1.814.4W mW/°C Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
PROVISIONAL ISSUE A - JULY 1999
ZXM64P03X
0.1
10100
0.0001
100
080160
-V DS - Drain-Source Voltage (V)
Safe Operating Area 100m
1
100
-I D - D r a i n C u r r e n t (A )
D=0.1
D=0.2T h e r m a l R e s i s t a n c e (°C /W )
80
40
M a x P o w e r D i s s i p a t i o n (W a t t s )
2.0
1.0
T - T emperature (°C)
Derating Curve
Single Pulse
D=0.5
T h e m a l R e s i s t a n c e (°C /W )
0.00010
1000
60
120
Single Pulse
D=0.5
D=0.2D=0.1
110
0.5
1.5
1401201006040
201010.01
0.0011001010.10.01
0.001
90
30
6020
0.1Pulse Width (s)
Transient Thermal Impedance Pulse Width (s)
Transient Thermal Impedance
Refer Note (b)
Refer Note (a)
Refer Note (b)Refer Note (a)
CHARACTERISTICS
DC 1s 100ms 10ms 1ms 100us
Refer Note (a)
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PROVISIONAL ISSUE A - JULY 1999
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V (BR)DSS -30
V I D =-250µA, V GS =0V Zero Gate Voltage Drain Current I DSS -1µA V DS =-30V, V GS =0V Gate-Body Leakage
I GSS ±100
nA V GS =± 20V, V DS =0V Gate-Source Threshold Voltage
V GS(th)-1.0
V I D =-250µA, V DS =V GS
Static Drain-Source On-State Resistance (1)
R DS(on)0.0750.100
ΩΩV GS =-10V, I D =-2.4A V GS =-4.5V, I D =-1.2A Forward Transconductance (3)g fs
2.3S
V DS =-10V,I D =-1.2A
DYNAMIC (3)Input Capacitance C iss 825pF V DS =-25 V, V GS =0V,f=1MHz
Output Capacitance
C oss 250pF Reverse Transfer Capacitance C rss
80
pF
SWITCHING (2) (3)Turn-On Delay Time t d(on) 4.4ns V DD =-15V, I D =-2.4A R G =6.2Ω, R D =6.2Ω(Refer to test circuit)
Rise Time
t r 6.2ns Turn-Off Delay Time t d(off)40ns Fall Time
t f 29.2
ns Total Gate Charge Q g 46nC V DS =-24V,V GS =-10V, I D =-2.4A
(Refer to test circuit)
Gate-Source Charge Q gs 9nC Gate Drain Charge Q gd
11.5
nC
SOURCE-DRAIN DIODE Diode Forward Voltage (1)V SD -0.95
V T j =25°C, I S =-2.4A,V GS =0V
Reverse Recovery Time (3)t rr 30.2ns T j =25°C, I F =-2.4A,di/dt= 100A/µs
Reverse Recovery Charge(3)
Q rr
27.8
nC
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.(3) For design aid only, not subject to production testing.
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ZXM64P03X
PROVISIONAL ISSUE A - JULY 1999
0.110100
2.560.1100
0.20.8 1.4
+200
0.110100
-V DS - Drain-Source Voltage (V)Output Characteristics 100m
10100
-I D - D r a i n C u r r e n t (A )
-VGS
10V VDS=-10V
-I D - D r a i n C u r r e n t (A )
100
1
100m
-V GS - Gate-Source Voltage (V)Typical Transfer Characteristics
R D S (o n )- D r a i n -S o u r c e O n -R e s i s t a n c e (Ω)
1
100m
10m
-I D - Drain Current (A)On-Resistance v Drain Current -I D - D r a i n C u r r e n t (A )
100
1
100m
-V DS - Drain-Source Voltage (V)
Output Characteristics
N o r m a l i s e d R D S (o n ) a n d V G S (t h )
1.7
Tj - Junction Temperature (°C)
Normalised R DS(on)and V GS(th)
v Temperature
-I S D - R e v e r s e D r a i n C u r r e n t (A )
100
10m
-V SD - Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
T=+150 C T=+25 C
T=+150°C
VGS=-10V T=+25°C
RDS(on)
ID=-2.4A
VGS=VDS ID=-250uA VGS(th)
118V 6V
5V
4.5V
4V 3.5V
3V
+25°C
+150°C
10V 8V 6V
5V -VGS
4.5V 4V
3.5V 2.5V
3V
110
10
5.554.543.53+1000-100
1.51.31.10.90.70.5101Vgs=-4.5V
Vgs=-10V
Vgs=-3V
1.21.00.60.410
100m
1
TYPICAL CHARACTERISTICS
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ZXM64P03X
PROVISIONAL ISSUE A - JULY 1999
ZXM64P03X
TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE A - JULY 1999
150
ZXM64P03X
152DIM Millimetres Inches
MIN MAX MIN MAX A 1.100.043 A10.050.150.0020.006 B0.250.400.0100.016 C0.130.230.0050.009 D 2.90 3.100.1140.122 e0.65BSC0.0256BSC E 2.90 3.100.1140.122 H 4.90BSC0.193BSC L0.400.700.0160.028 q°0°6°0°6°
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Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
PROVISIONAL ISSUE A - JULY 1999。