PS2705(光电耦合隔离器)

合集下载

夏普光耦选型手册

4脚 DIP
PC815XNNSZ0F*5, *6 复合光晶 PC81510NSZ0X 体管 5, 6 输 PC852XNNSZ0F* * 出 PC853XNNSZ0F*5, *6
*1 *2 *3 *4 *5 *6 *7 *8 *9
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50
5.0
35
600
1
60
100
⅜ ⅜ ⅜
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10
页码 40 40 40 40 40 40 41 41 41 41 41 41 41 42 42 42 42 42 42 43 43
<OPIC 输出型>
封装类型输出类型特点型号（系列） PC400J00000F／PC456L0NIP0F／ PC410S0NIP0F ／PC410L0NIP0F ／ PC4D10SNIP0F PC457S0NIP0F ／PC457L0NIP0F 页码
PC714V0NSZXF PC724V0NSZXF
高绝缘电压高绝缘电压，大输入电流高绝缘电压，带基底端子高绝缘电压，高灵敏度高绝缘电压，高灵敏度, 高集电极发射极电压，大功率
PC3HU7xYIP0B
PC3H2J00000F （小扁平型4脚）
注意：未经元器件规格说明书确认，便在设备中使用产品目录、数据手册等所刊载的任何夏普元器件，由此引起的故障或损害，夏普公司将不负任何责任。除非特别说明，本页所列的型号均符合 RoHS （有害物质限制）标准* 。详情请与夏普公司联系。 *RoHS （有害物质限制）标准：禁止使用铅、镉、六价铬、汞和特定溴系阻燃剂（PBB 和 PBDE），除特别情况外。因此，在使用任何夏普元器件之前，务请与夏普公司联系以获取最新的元器件规格说明书。

R2705中文资料

27.195MHz FSK Radio Data Receiver , R2705DescriptionThe R2705 is a radio data receiver to receive digital data. Baud rates of 300 to 2400 bps can be received (Can be used to 4800bps with reduced sensitivity). The low cost, small size, low current consumption makes it ideal for various applications.Technical DataSupply Voltage4.5 -5.5 VDC Absolute maximum6.5VDC. Current Consumption 3.5mAReceiver Type Dual Conversion SuperheterodyneReceiving Freq 27.195MHz (Other freq available on 27.045, 27.145, & 27.455MHz. The 27.455 freq is not available for Australia)Oscillation SystemVCO with 10ppm Crystal Controlled reference Oscillator Operating Temperature Range -5 to 50°CIF Freq10.7 MHz and 455KHzSelectivity -6dB at ±5kHz-20dB at ±6kHz SensitivityBetter than -107dBm or 1µV Type of Demodulation Frequency Shift Keying. (FSK) Occupied Band Width 25KHz at -20dB.Baud Rate 2400 bps with 50% duty cycle (Can be used to 4800bps with reduced sensitivity) Data Output Level 0-5VFrequency Response 150 to 2400 Hz with 50% duty cycle (Other duty cycles will degrade sensitivity)Dimension39 x 25 x 12mmWeight 13 grams Usable Transmitter FMT-2712 Data Transmitter Antenna50 ohms, 27MHz AntennaR270527.195MHz FSK Radio Data ReceiverFeatures• Receives digital data• Baud rates 300 - 2400bps• Low cost, small size, low current consumptionApplication • Telecommand Systems• Security Systems • Alarms • Radio Data Communications• Commercial / Industrial TelemetryConnectionR2705 Data FormatIt is important to input the correct data format otherwise the receiver will have a lower sensitivity which will result in a reduced transmission range.The R2705 receiver data slicer is set for 50/50-duty cycle, therefore the “data in” should have a 50/50-duty cycle. The 50/50-duty cycle data can be pulse-width modulated to transmit resets, 0's or 1's. See diagram below :A 50/50-duty cycle will have an average DC signal resulting in a constant reference for the data slicer. Users should use pulse-width modulation to transmit data with logic 1's or 0's.If a different duty cycle is used, for example 66/33 ( Manchester format) the data slicer in the receiver will try to adjust itself to the average DC signal. Since this average DC signal is changing with different data bits this will result in a constantly changing reference for the data slicer, resulting in lower sensitivity. See diagram below : If 66/33 format is to be used the R2705E module is recommended.*Only 50/50 duty cycle data is suitable for the R2705 receiver.Manufactured byElsema Pty Ltd3/10 Hume Rd, SmithfieldNSW 2164Ph: 02 9609 4668Fax: 02 9725 2663Website: 。

非常齐全用于IGBT驱动和IPM Drivers的光耦型号推荐

非常齐全用于IGBT驱动和IPM Drivers的光耦型号推荐IC输出高速1Mbps器件有：PS9613 PS8501 PS8502 PS9513 8-pin DIP封装PS8101、PS9113 PS9213(蠕动5.5mm) 5-pin SOP (SO-5) 封装PS8802-1/-2 PS8821-1/-2 8-pin Small SOP(SO-8) 封装超高速10Mbps器件有：PS9617 PS9587 8-pin DIP封装PS9115、PS9117A、PS9121、PS9214(蠕动5.5mm) 5-pin SOP(SO-5) 封装PS9817A-1/-2 PS9821-1/-2 8-pin Small SOP(SO-8) 封装超高速15Mbps (CMOS)器件有：PS9151 5-pin SOP(SO-5) 封装PS9851-1/-2 8-pin Small SOP(SO-8) 封装隔离放大器类模拟输出器件有：PS8551 8-pin DIP封装隔离放大器类数码输出器件有：PS9551 8-pin DIP封装B、晶体管输出通用型单级器件有：PS2501series PS2501Aseries PS2513 series PS2561 series 4-pin DIP封装PS2561Aseries PS2561Bseries PS2581 series PS2581Aseries 4-pin DIP封装PS270x series PS2701A series PS2761B series SOP封装PS2801 series PS2801C series PS2841 series PS2861 series Small SOP封装PS291x series 超小型扁平引脚封装通用型达林顿器件有：PS25x2 series 4-pin DIP封装PS2702-1 SOP封装PS2802-1/-4 Small SOP封装AC输入单级器件有：PS25x5 series 4-pin DIP封装PS2705A-1 SOP封装PS28x5 series PS2805C series Small SOP封装PS2915-1 超小型扁平引脚封装AC输入达林顿器件有：PS25x6 series 4-pin DIP封装低电流驱动器件有：PS2503 series 4-pin DIP封装PS271x series SOP封装PS281x series Small SOP封装PS291x series 超小型扁平引脚封装高集电极耐压器件有：PS253x series 4-pin DIP封装PS2733-1 SOP封装PS283x series Small SOP 封装PS2933-1 超小型扁平引脚高集电极耐压DC输入器件有：PS2521 series 4-pin DIP封装高集电极耐压AC输入器件有：PS2525 series 4-pin DIP封装C、电机驱动电机驱动用（变频器用）器件有：PS9613 PS9513 8-pin DIP封装PS9113 PS9213(蠕动5.5mm) 5-pin SOP(SO-5) 封装IGBT驱动用器件有：PS9552 8-pin DIP封装2、东芝A、光电耦合器 (晶体管输出)用于For Switching Supplies and DC/DC Converters的型号有：TLP281、TLP283 SOP4封装TLP181 MFSOP6封装TLP421、TLP421F、TLP781、TLP781F DIP4封装用于For Home Appliances (HAs)的型号有：TLP280 SOP4封装TLP180 MFSOP6封装TLP620、TLP620F DIP4封装用于For Programmable Logic Controllers (PLCs)的型号有：TLP280-4、TLP281-4、TLP283-4 SOP16封装用于For Telecommunications的型号有：TLP320、TLP628、TLP629 DIP4封装TLP330 DIP6封装用于Low Input Type的型号有：TLP124、TLP126、TLP137 MFSOP6封装TLP624、TLP626 DIP4封装TLP331、TLP332 DIP6封装用于1-Channel Type的型号有：TLP130、TLP131 MFSOP6封装TLP521-1、TLP621、TLP621F DIP4封装TLP531、TLP532、TLP630、TLP631、TLP632、TLP731 DIP6封装TLP732、TLP733、TLP733F、TLP734、TLP734F DIP6封装用于2-Channel Type的型号有：TLP504A、TLP521-2、TLP621-2、TLP624-2、TLP628-2、TLP629-2 DIP8封装用于2-Channel Type with AC Input的型号有：TLP320-2、TLP620-2、TLP626-2 DIP8封装用于4-Channel Type的型号有：TLP521-4、TLP621-4、TLP624-4、TLP628-4、TLP629-4 DIP16封装用于4-Channel Type with AC Input的型号有：TLP320-4、TLP620-4、TLP626-4 DIP16封装B、光电耦合器(达林顿晶体管输出)用于General-purpose的型号有：TLP570、TLP571、TLP572 DIP6封装TLP523 DIP4封装用于High V CEO的型号有：TLP127 MFSOP6封装TLP371、TLP372、TLP373 DIP6封装TLP627、TLP627A DIP4封装用于2-Channel Type的型号有：TLP523-2、TLP627-2 DIP8封装用于4-Channel Type的型号有：TLP523-4、TLP627-4 DIP16封装C、光电耦合器(三端双向可控硅输出)用于Multi-channel Type的型号有：TLP525G DIP4封装TLP525G-2 DIP8封装TLP525G-4 DIP16封装D、光电耦合器(IC输出)用于For IPM Drivers的型号有：TLP102 MFSOP6封装TLP559(IGM) DIP8封装用于For IGBT/MOSFET/Giant Transistor Gate Drive的型号有：TLP700、TLP701、TLP701F、TLP702、TLP702F SDIP6封装TLP705、TLP705F、TLP706、TLP706F SDIP6封装TLP250、TLP250F、TLP250(INV)、TLP250F(INV)、TLP251 DIP8封装TLP251F、TLP350、TLP350F、TLP351、TLP351F、TLP557 DIP8封装用于1-Channel Type的型号有：TLP112、TLP112A、TLP113、TLP114A、TLP115、TLP115A MFSOP6封装TLP716、TLP716F、TLP719、TLP719F SDIP6封装TLP512、TLP513 DIP6封装TLP550、TLP551、TLP552、TLP553、TLP554、TLP555 DIP8封装TLP558、TLP559、TLP651、TLP750、TLP750F、TLP751 DIP8封装TLP751F、TLP759、TLP759F、TLP2200、TLP2601 DIP8封装用于2-Channel Type的型号有：TLP2530、TLP2531、TLP2630、TLP2631 DIP8封装用于JEDEC Type的型号有：6N135、6N136、6N137、6N138、6N139 JEDEC封装。

主要芯片的温度范围

LM7809 -55to150
TMS320LF2407（DSP处理器）-40to125
CY7C1021（高性能CMOS随机存储器）-40to85
SN74AHC244DGV（八进制三态输出驱动器）-40to85
EPM1270-40to100
TSP7333Q-40to125
MC1403B（低基准电压）-65to150
主要芯片的温度范围：
芯片名称存储温度范围（℃）
给定
TL431CPK（可调整精密并联调节器）-40to85
板上用的CJ431（可调整精密基准源）-65to150
反馈
OP27GS（低噪音精密度运算放大器）-40to85
光电隔离
PS2801-4（高绝缘电压片光电耦合器）-55to150
脉冲放大输出
TC4427COA（1.5A双重高速功率晶体管驱动器）0to70
通讯电路
MAX232/485/490 -65to160
A82C250（CAN控制器）-55to150
MMBT2907A（PNP常规放大器）-55to150
同步整形
LM239/339D（四相微分比较器）-65to150
系统供电
AMS1117（800mA低压差稳压器）-65to150
LM7905 -65to150
TC4426EOA-40to85
脉冲光电隔离
HCPL2631（双通道光绝缘体）-55to125
SN74ALVTH16244DL（3.3V16位三态输出缓冲器）-65to150
三相电幅值检测
LM393AD/293（双重微分比较器）-65to150
锁相环
MC74HC4046AD（高性能硅门CMOS管）-65to150

常用光电耦合器代换大全

常用光电耦合器代换大全常用光电耦合器代换大全时间: 2012-05-19 18:15:51 来源: 山阳维修网光电耦合器结构及代换型号时间: 2010-10-25 03:22:21 来源: 山阳维修网光电耦合器在彩电控制电路中应用比较广泛，维修人员也常接触到光电耦合器。

笔者依据光电耦合器的特性，设计了一个方便的测试光电耦合器好坏的电路，如图1所示。

该电路简单、准确，使用方便。

电路原理当接通电源后，LED不发光，按下S2，LED会发光。

调Rp，LED的发光强度会发生变化，说明光电耦合器是好的。

实际制作时，可用面包板安装元器件和焊接。

另外，若S2用轻触常开开关，S1用钮子开关，电池用纽扣电池AG3等，再加上集成块座可把该测试电路安装在一个小印板上，整个装置只相当于1/2火柴盒大小。

附：常见光电耦合器结构及代换型号见图2。

光耦合器(opticalcoupler，英文缩写为OC)亦称光电隔离器或光电耦合器，简称光耦。

它是以光为媒介来传输电信号的器件，通常把发光器(红外线发光二极管LED)与受光器(光敏半导体管)封装在同一管壳。

当输入端加电信号时发光器发出光线，受光器接受光线之后就产生光电流，从输出端流出，从而实现了“电—光—电”转换。

以光为媒介把输入端信号耦合到输出端的光电耦合器，由于它具有体积小、寿命长、无触点，抗干扰能力强，输出和输入之间绝缘，单向传输信号等优点，在数字电路上获得广泛的应用。

各品牌光耦替代型号FairchildNECPart NnmberTOSHIBA Par NumberLvPartNnmberTOSHIBA Par Number LvH11A617TLP421BPS2501-1TLP421AH11A817TLP421APS2561-1 TLP421AH11AA814 TLP620BTLP2571-1 TLP421AH11B815 TLP627ATLP2581L1 TLP421F AHMA121 TLP181APS2505-1 TLP620BHMA124 TLP124APS2565-1 TLP620BHMA2701 TLP181APS2502-1 TLP627AHMHA2801 TLP281APS2562-1 TLP627AHMHA281TLP281APS2532-1 TLP627AHMAA2705 TLP180APS2533-1 TLP627HMHAA280 TLP280APS2521-1 TLP629BH11A1 TLP631ATLP2525-1 TLP320BH11AA1 TLP630APS2701-1 TLP181AH11AG1TLP331 APS2761-1 TLP181 AH11B1 TLP571 APS2705-1 TLP180 AH11C1 TLP541G APS2765-1 TLP180 AH11D1 TLP371 CPS2702-1TLP127AH11G1TLP371APS2801-1 TLP281AMOC3021-M TLP3021(S)APS2801-4 TLP281-4AMOC3022-M TLP3022(S) APS2861-1 TLP281AMOC3023-M TLP3023(S) APS2805-1 TLP280AMOC3041-M TLP3041(S) APS2805-4TLP280-4AMOC3042-M TLP3042(S) APS2865-1 TLP280AMOC3043-M TLP3043(S)APS2811-1 TLP283BMOC3051-M TLP3051(S) APS2811-4 TLP283-4BMOC3052-M TLP3052(S) APS8601 TLP759BMOC3061-M TLP3061(S) APS8602 TLP759AMOC3062-M TLP3062(S) APS9613 TLP759(IGM) AMOC3063-M TLP3063(S) APS8701TLP114ABVishayPS8101TLP114ABPart Nnmber TOSHIBA Par Number LvPS9713TLP114A(IGM) BK817PTLP421APS9113TLP114A(IGM) BSFH610ATLP421 APS9601 TLP554 ASFH614A TLP628 APS9614 TLP554SFH615A TLP421 APS9714 TLP115A BSFH617A TLP421 APS9114 TLP115A BSFH618A TLP624 BPS9715 TLP115A BTCET1100TLP421APS9115 TLP115A BSFH690XT TLP181APS9701 TLP115A ATCMT1100 TLP281APS7141-1A TLP597GA ATCMT4100 TLP281-4 APS7141-2ATLP227GA-2 ASFH628A TLP620BPS7141-1B TLP4597G BK815PTLP627APS7141-2B TLP4227G-2 BSFH612A TLP627APS7141-1C TLP4006G BSFH619A TLP627APS7341C-1A TLP594GBSFH655A TLP627APS7141C-2A TLP224G-2BSFH692AT TLP127APS7241-1A TLP176GA ATCED1100 TLP627APS7241-2A TLP206GA AIL66TLP371APS7241-1B TLP4176G BIL66BTLP372APS7241-2B TLP4206G B。

芯科科技推出全新系列隔离模拟放大器、电压传感器和Delta-Sigma调制器(DSM)器件

编者按：今日，芯科科技推出了一系列新产品，产品使用第三代技术具有更高标准，新产品更浪涌性能、可靠性、集成度和安全性。

日前，芯科科技（Silicon Labs，NASDAQ：SLAB）推出了一系列隔离模拟放大器、电压传感器和Delta-Sigma调制器（DSM）器件，设计旨在整个温度范围内提供超低温漂的精确电流和电压测量。

新型Si89xx系列产品基于Silicon Labs强大的第三代隔离技术，可提供灵活的电压、电流测量，并且有丰富的输出接口和封装选项，帮助开发人员降低BOM成本、减小电路板空间，适用于各种工业和绿色能源应用，包括电动汽车（EV）电池管理和充电系统、DC-DC 转换器、电动机、太阳能和风力涡轮机逆变器等。

精确电流和电压测量对于功率控制系统的精确操作至关重要。

为了最大限度地提高效率并对故障或负载变化快速响应，系统控制器需要来自高压供电线上的电流和电压信息。

Silicon Labs的第三代隔离技术可在1414V工作电压和13kV双极性浪涌的情况下保持控制器在较宽温度范围内的安全性，并超越严格的行业要求。

据介绍，Silicon Labs现在可提供业界最广泛的电流和电压传感器产品组合。

Si89xx系列包括四个产品类别：•Si892x隔离模拟放大器，特别针对电流分流检测进行了优化。

•Si8931/2隔离模拟放大器，特别针对通用电压检测进行了优化。

•Si8935/6/7隔离DSM器件，业界首创特别针对电压检测进行了优化。

•Si8941/6/7隔离DSM器件，特别针对电流分流检测进行了优化。

Silicon Labs副总裁兼电源产品总经理Brian Mirkin表示：“在过去的十年间，我们的第一代和第二代混合信号隔离技术推动我们数字隔离产品在市场上取得巨大的成功，我们在新型Si89xx器件中使用的第三代技术具有更高标准。

我们的隔离产品将继续取代传统的光耦合器，并且优于竞争对手的数字隔离器，这为需要高压保护的系统设计提供了更高的浪涌性能、可靠性、集成度和一流的安全性。

深圳市奥伦德科技有限公司光电耦合器ORPC-817S说明书

深圳市奥伦德科技有限公司審核制表样品规格书 S p e c i f i c a t i o n s h e e t品名(P/N): 光电耦合器 Photocoupler客户名称(Customer):本厂型号(Mfg P/N): ORPC-817S日期(Date):深圳市奥伦德科技有限公司Shenzhen Orient Components Co.,Ltd. 深圳市光明新区光明同富裕工业区3栋1楼1/F,Block 3,Guang Ming Tong Fuyu Industrial Park,Guang Ming New District,Shenzhen Tel: 86-755-29681816 Fax: 86-755-29681200 ●特点Features:1:电流转换比(CTR: 最小. 50%工作条件IF=5mA, VCE=5V)Current conversion ratio (Min 50% Working condition IF=5mA, VCE=5V)2:绝缘电压：(VISO=5,000Vrms)Insulation V oltage: (VISO=5,000Vrms)3:响应时间 (tr: TYP. 4μs 工作条件VCE=2V, IC=2mA, RL=100 Ω)Response Time (tr: TYP. 4μs working condition VCE=2V, IC=2mA, RL=100 Ω)4:CE认证（AC/0431008）CQC认证（CQC09001029446）UL认证（E323844）●说明Instructions:1:ORPC-817S系列光耦合器的组成是：由一个GaAs的发射管和一个 NPN的晶体管组成ORPC-817S photocoupler consist of one piece of GaAs emitter and one piece of NPN transistor 2:ORPC-817S的BIN脚宽是 2.54mmBIN width of ORPC-817S is 2.54mm●应用范围Application range:1.电脑. computer2.器具的应用, 测量机. Instrumental application, measurement machine3.贮存器, 复印机, 自动售货机. Imbursement equipments, duplicating machine, automat4.家用电器, 如风扇等. Family-use electric equipments, such as fans5.信号传输系统. Signal transforming systems●最大绝对额定值(常温=25℃)Max Absolute rated value (Normal Temperature=25℃)参数Parameter 符号Sign额定值Rated value单位Unit顺向电流 Forward Current IF 50 mA逆向电压 Reverse Voltage VR 6 V 输入input消耗功率 Consume Power P 70 mW集极与射极电压Collector and emitter VoltageVCEO 35射极与集极电压Emitter and collector Voltage VECO6V集极电流Collector Current IC 50 mA输出output消耗功率Consume Power PC 150 mW总功率消耗 Total Consume Power Ptot 200 mW *1 绝缘电压 Insulation Voltage Viso 5,000 Vrms 最大绝缘电压 Max Insulation Voltage VIOTM 6,000 V额定脉冲绝缘电压Rated Impulse InsulationVoltageVIORM 630 V工作温度 Working Temperature Topr -30 to + 100存贮温度 Deposit Temperature Tstg -55 to + 125*2 焊锡温度 Soldering Temperature Tsol 260℃z*1. 交流测试, 时间1分钟，湿度. =40~60%AC Test, 1 minute, humidity = 40~60%如下是绝缘测试的方法.Insulation test method as below:(1) 将产品的两端短路。

PS2705-1

The mark <R> shows major revised points.The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.Data SheetPS2705-1HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP MULTI PHOTOCOUPLERDESCRIPTIONThe PS2705-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.This package is SOP (Small Outline Package) type and has shield effect to cut off ambient light. It is designed for high density mounting applications.FEATURES• AC input response• High isolation voltage (BV = 3 750 Vr.m.s.) • High current transfer ratio (CTR = 100% TYP.) • SOP (Small Outline Package) type• High-speed switching (tr = 3 μs TYP., tf = 5 μs TYP.) • Ordering number of taping product : PS2705-1-F3 •Safety standards• UL approved: No. E72422• BSI approved (BS EN 60065, BS EN 60950)• CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950) • SEMKO, NEMKO, DEMKO, FIMKO approved (EN 60065, EN 60950) • DIN EN 60747-5-5 (VDE 0884-5) approved (Option)APPLICATIONS• Hybrid IC• Telephone/FAX • FA/OA equipment• Programmable logic controllers •Power supplyR08DS0093EJ0300Rev.3.00Jan 29, 2013<R>PACKAGE DIMENSIONS (UNIT: mm)<R>PHOTOCOUPLER CONSTRUCTION(MIN.)Parameter Unit Air Distance 5 mmOuter Creepage Distance 5 mmInner Creepage Distance 2.5 mmIsolation Distance 0.3 mmMARKING EXAMPLE<R>ORDERING INFORMATIONPart Number Order Number Solder PlatingSpecification Packing Style Safety StandardApprovalApplicationPart Number*1PS2705-1-F3 PS2705-1-F3-A Embossed Tape3 500 pcs/reel Standard products (UL, BSI, CSA, SEMKO, NEMKO, DEMKO, FIMKO approved)PS2705-1-V-F3 PS2705-1-V-F3-A Pb-FreeEmbossed Tape3 500 pcs/reelDIN EN 60747-5-5(VDE 0884-5)Approved (Option)PS2705-1Note: *1. For the application of the Safety Standard, following part number should be used.ABSOLUTE MAXIMUM RATINGS (T A = 25°C, unless otherwise specified)Parameter SymbolRatingsUnit Diode Forward Current (DC) I F± 50 mAPower Dissipation Derating ΔP D/°C 0.8 mW/°C PowerDissipation P D 80 mWPeak Forward Current*1I FP± 1 A Transistor Collector to Emitter Voltage V CEO 40 VEmitter to Collector Voltage V ECO 6 V CollectorCurrent I C 80 mAPower Dissipation Derating ΔP C/°C 1.5 mW/°C PowerDissipation P C 150 mW Isolation Voltage*2BV 3750Vr.m.s.Operating Ambient Temperature T A–55 to +100°CStorage Temperature T stg–55 to +150°CNote: *1. PW = 100 μs, Duty Cycle = 1%*2. AC voltage for 1 minute at T A = 25°C, RH = 60% between input and output.Pins 1-2 shorted together, 3-4 shorted together.<R>ELECTRICAL CHARACTERISTICS (T A = 25°C)Parameter Symbol Conditions MIN. TYP. MAX.UnitDiode Forward Voltage V F I F = ± 5 mA 1.1 1.4 V TerminalCapacitanceC tV = 0 V, f = 1 MHz 60 pF Transistor Collector to EmitterDark CurrentI CEOI F = 0 mA, V CE = 40 V100 nA Coupled Current TransferRatio (I C /I F )*1CTR I F = ± 5 mA, V CE = 5 V 50 100 300 % CTR Ratio *2CTR 1/ CTR 2 I F = ± 5 mA, V CE = 5 V 0.3 1.0 3.0 Collector Saturation VoltageV CE (sat) I F = ± 10 mA, I C = 2 mA0.3V Isolation Resistance R I-O V I-O = 1 kV DC 1011 Ω Isolation Capacitance C I-O V = 0 V, f = 1 MHz0.4pFRise Time *3 t rV CC = 5 V, I C = 2 mA, R L = 100 Ω 3 μsFall Time *3 t f 5 Turn-on Time *3 t on 5Turn-off Time *3t off4Note: *1. CTR rank M: 50 to 150 (%) L: 100 to 300 (%) N: 50 to 300 (%)*2. CTR 1 = I C1/I F1, CTR 2 = I C2/I F2I F1I F2V CE*3. Test Circuit for Switching TimeInputOutputCCOUTΩ<R> <R>TYPICAL CHARACTERISTICS (T A = 25°C, unless otherwise specified)1005025075255075100Ambient Temperature T A (˚C)D i o d e P o w e r D i s s i p a t i o n P D (m W )DIODE POWER DISSIPATION vs.AMBIENT TEMPERATURE20015010050025*******Ambient Temperature T A (˚C)T r a n s i s t o r P o w e r D i s s i p a t i o n P C (m W )TRANSISTOR POWER DISSIPATION vs.AMBIENT TEMPERATURE1.5 mW/˚CForward Voltage V F (V)F o r w a r d C u r r e n t I F (m A )FORWARD CURRENT vs.FORWARD VOLTAGEAmbient Temperature T A (˚C)COLLECTOR TO EMITTER DARKCURRENT vs. AMBIENT TEMPERATUREC o l l e c t o r t o E m i t t e rD a r k C u r r e n t I CE O (n A )Collector Saturation Voltage V CE (sat) (V)C o l l e c t o r C u r r e n t I C (m A )COLLECTOR CURRENT vs.COLLECTOR SATURATION VOLTAGEFORWARD CURRENT vs.FORWARD VOLTAGEForward Voltage V F (V)F o r w a r d C u r r e n t I F (m A )806040200–40–60–80–20–1.200.4 1.2 1.6–1.6–0.8–0.40.8Remark The graphs indicate nominal characteristics.1.20.60.00.81.00.40.202550100–50–2575Ambient Temperature T A (˚C)NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATUREN o r m a l i z e d C u r r e n t T r a n s f e r R a t i o C T RNormalized to 1.0 at T A = 25 ˚C,I F = 5 mA, V CE = 5 V3002501505002001000.050.55500.1110Forward Current I F (mA)C u r r e n t T r a n s f e r R a t i o C T R (%)CURRENT TRANSFER RATIO vs.FORWARD CURRENTV CE = 5 VLoad Resistance R L (Ω)SWITCHING TIME vs.LOAD RESISTANCES w i t c h i n g T i m e t ( s )μLoad Resistance R L (Ω)SWITCHING TIME vs.LOAD RESISTANCES w i t c h i n g T i m e t ( s )μFrequency f (kHz)N o r m a l i z e d G a i n G VFREQUENCY RESPONSECollector to Emitter Voltage V CE (V)C o l l e c t o r C u r r e n t I C (m A )COLLECTOR CURRENT vs.COLLECTOR TO EMITTER VOLTAGERemark The graphs indicate nominal characteristics.<R>TAPING SPECIFICATIONS (UNIT: mm)<R>RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)<R>NOTES ON HANDLING1. Recommended soldering conditions (1) Infrared reflow soldering • Peak reflow temperature 260°C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The fluxwith a maximum chlorine content of 0.2 Wt% is recommended.)P a c k a g e S u r f a c e T e m p e r a t u r e T (˚C )Time (s)Recommended Temperature Profile of Infrared Reflow(2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time10 seconds or less• Preheating conditions 120°C or below (package surface temperature)• Number of times One (Allowed to be dipped in solder including plastic mold portion.)• FluxRosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.)(3) Soldering by Soldering Iron• Peak Temperature (lead part temperature) 350°C or below • Time (each pins) 3 seconds or less • Flux Rosin flux containing small amount of chlorine (The flux with amaximum chlorine content of 0.2 Wt% is recommended.)(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead(4) Cautions • FluxesAvoid removing the residual flux with freon-based and chlorine-based cleaning solvent.<R>2. Cautions regarding noiseBe aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings.3. Measurement conditions of current transfer ratios (CTR), which differ according to photocouplerCheck the setting values before use, since the forward current conditions at CTR measurement differ according to product.When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. This tendency may sometimes be obvious, especially belowI F = 1 mA.Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use.USAGE CAUTIONS1. Protect against static electricity when handling.2. Avoid storage at a high temperature and high humidity.SPECIFICATION OF VDE MARKS LICENSE DOCUMENTParameter SymbolSpec.Unit Climatic test class (IEC 60068-1/DIN EN 60068-1) 55/100/21Dielectric strengthmaximum operating isolation voltageTest voltage (partial discharge test, procedure a for type test and random test)Upr = 1.6 × U IORM, P d< 5 pC U IORMU pr7071 131V peakV peakTest voltage (partial discharge test, procedure b for all devices) U pr = 1.875 × U IORM, P d< 5 pC Upr 1325 V peakHighest permissible overvoltage U TR 6000 V peak Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) 2Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303Part 11))CTI 175 Material group (DIN EN 60664-1 VDE0110 Part 1) III aStorage temperature range T stg–55 to +150 °C Operating temperature range T A–55 to +100 °C Isolation resistance, minimum valueV IO = 500 V dc at T A = 25°CV IO = 500 V dc at T A MAX. at least 100°C Ris MIN.Ris MIN.10121011ΩΩSafety maximum ratings (maximum permissible in case of fault, see thermal derating curve)Package temperatureCurrent (input current I F, Psi = 0) Power (output or total power dissipation) Isolation resistanceV IO = 500 V dc at T A = TsiTsiIsiPsiRis MIN.150300500109°CmAmWΩ<R>Revision History PS2705-1 Data SheetDescriptionRev. Date Page Summary 1.00 Mar 31, 2003 − This data sheet was released as PN10243EJ01V0DS3.00Jan 29, 2013 Throughout Renesas format is applied to this data sheet.p.1 The safety standards are revised.p.2 PHOTOCOUPLER CONSTRUCTION is added.p.3 The explanation in MARKING EXAMPLE is revised.p.4ORDERING INFORMATION is modified with the revision of the safetystandards.p.5Turn-on Time (t on) and Turn-off Time(t off) are added to the table inELECTRICAL CHARACTERISTICS.Time chart for switching time is added.p.7 The graph of LONG TERM CTR DEGRADATION is deleted from those inTYPICAL CHARACTERISTICS.p.8PS2705-1--F4 is deleted form Tape Direction image in TAPINGSPECIFICATIONS.p.9 RECOMMENDED MOUNT PAD DIMENSIONS is added.p.10The note about temperature condition of the recommended solderingconditions is deleted.p.12 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT is revised.Notice1. 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PS2705光耦

DATA SHEETThe information in this document is subject to change without notice.©1988Document No. P11309EJ5V0DS00 (5th edition)Date Published December 1998 NS CP (K)Printed in JapanThe mark • shows major revised points.DESCRIPTIONThe PS2705-1, PS2705-2, PS2705-4 are optically coupled isolators containing two GaAs light emitting diodes and an NPN silicon phototransistor.These packages are SOP (Small Outline Package) type and have shield effect to cut off ambient light.They are designed for high density mounting applications.FEATURES•AC input response•High isolation voltage (BV = 3 750 Vr.m.s.)•High current transfer ratio (CTR = 100 % TYP.)•SOP (Small Outline Package) type•High-speed switching (t r = 3 µs TYP., t f = 5 µs TYP.)•Ordering number of taping product (Only-1 type) : PS2705-1-E3, E4, F3, F4•UL approved: File No. E72422 (S)•VDE0884 approved (Option)APPLICATIONS•Hybrid IC •Telephone/FAX •FA/OA equipment•Programmable logic controllers •Power supplyORDERING INFORMATIONPart Number Package Safety Standard ApprovalPS2705-14-pin SOP Standard products PS2705-28-pin SOP • UL approvedPS2705-416-pin SOP PS2705-1-V 4-pin SOP VDE0884 approved products (Option)PS2705-2-V 8-pin SOP PS2705-4-V16-pin SOPData Sheet P11309EJ5V0DS002PACKAGE DIMENSIONS (in millimeters)Data Sheet P11309EJ5V0DS003ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise specified)RatingsParameterSymbolPS2705-1PS2705-2,PS2705-4UnitDiode Forward Current (DC)I F ± 50mA Power Dissipation Derating ∆P D /°C 0.8mW/°C Power Dissipation P D80mW/ch Peak Forward Current*1I FP ± 1A Transistor Collector to Emitter Voltage V CEO 40V Emitter to Collector Voltage V ECO 6V Collector CurrentI C80mA/chPower Dissipation Derating ∆P C /°C 1.5 1.2mW/°C Power DissipationP C 150120mW/ch Isolation Voltage*2BV 3 750Vr.m.s.Operating Ambient Temperature T A –55 to +100°C Storage TemperatureT stg–55 to +150°C*1PW = 100 µs, Duty Cycle = 1 %*2AC voltage for 1 minute at T A = 25 °C, RH = 60 % between input and outputData Sheet P11309EJ5V0DS004ELECTRICAL CHARACTERISTICS (T A = 25 °C)ParameterSymbol Conditions MIN.TYP.MAX.Unit DiodeForward Voltage V F I F = ± 5 mA 1.1 1.4V Terminal CapacitanceC t V = 0 V, f = 1 MHz 60pFTransistorCollector to Emitter CurrentI CEOI F = 0 mA, V CE = 40 V 100nACoupled Current Transfer Ratio(I C /I F )*1CTR I F = ± 5 mA, V CE = 5 V 50100300%CTR RatioCTR 1/CTR 2I F = ± 5 mA, V CE = 5 V 0.3 1.0 3.0Collector Saturation VoltageV CE (sat)I F = ± 10 mA, I C = 2 mA0.3V Isolation Resistance R I-O V I-O = 1 kV DC1011ΩIsolation Capacitance C I-O V = 0 V, f = 1 MHz0.4pFRise Time *2t r V CC = 5 V, I C = 2 mA, R L = 100 Ω3µsFall Time*2t f5*1CTR rank (only PS2705-1)M: 50 to 150 (%)L: 100 to 300 (%)N: 50 to 300 (%)*2CTR 1 = I C1/I F1, CTR 2 = I C2/I F2I F1I F2V CE*3Test circuit for switching timeCCOUTΩData Sheet P11309EJ5V0DS005TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise specified)1005025075255075100Ambient Temperature T A (˚C)D i o d e P o w e r D i s s i p a t i o n P D (m W )DIODE POWER DISSIPATION vs.AMBIENT TEMPERATURE20015010050025*******Ambient Temperature T A (˚C)T r a n s i s t o r P o w e r D i s s i p a t i o n P C (m W )TRANSISTOR POWER DISSIPATION vs.AMBIENT TEMPERATUREPS2705-11.5 mW/˚CPS2705-2,PS2705-41.2 mW/˚CForward Voltage V F (V)F o r w a r d C u r r e n t I F (m A )FORWARD CURRENT vs.FORWARD VOLTAGEAmbient Temperature T A (˚C)COLLECTOR TO EMITTER DARKCURRENT vs. AMBIENT TEMPERATUREC o l l e c t o r t o E m i t t e rD a r k C u r r e n t I CE O (n A )Collector Saturation Voltage V CE (sat) (V)C o l l e c t o r C u r r e n t I C (m A )COLLECTOR CURRENT vs.COLLECTOR SATURATION VOLTAGEFORWARD CURRENT vs.FORWARD VOLTAGEForward Voltage V F (V)F o r w a r d C u r r e n t I F (m A )806040200–40–60–80–20–1.200.4 1.2 1.6–1.6–0.8–0.40.8Data Sheet P11309EJ5V0DS0061.20.60.00.81.00.40.202550100–50–2575Ambient Temperature T A (˚C)NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATUREN o r m a l i z e d C u r r e n t T r a n s f e r R a t i o C T RNormalized to 1.0 at T A = 25 ˚C,I F = 5 mA, V CE = 5 V3002501505002001000.050.55500.1110Forward Current I F (mA)C u r r e n t T r a n s f e r R a t i o C T R (%)CURRENT TRANSFER RATIO vs.FORWARD CURRENTV CE = 5 VLoad Resistance R L (Ω)SWITCHING TIME vs.LOAD RESISTANCES w i t c h i n gT i m e t ( s )µLoad Resistance R L (Ω)SWITCHING TIME vs.LOAD RESISTANCES w i t c h i n g T i m e t (s )µFrequency f (kHz)N or m a l i z e d G a i n G VFREQUENCY RESPONSECollector to Emitter Voltage V CE (V)C o l l e c t o r C u r r e n t I C (m A )COLLECTOR CURRENT vs.COLLECTOR TO EMITTER VOLTAGEData Sheet P11309EJ5V0DS0076Time (Hr)LONG TERM CTR DEGRADATIONC T R (R e l a t i v e V a l u e )Remark The graphs indicate nominal characteristics.Data Sheet P11309EJ5V0DS008TAPING SPECIFICATIONS (in millimeters)Data Sheet P11309EJ5V0DS009RECOMMENDED SOLDERING CONDITIONS(1) Infrared reflow soldering •Peak reflow temperature235 °C (package surface temperature)•Time of temperature higher than 210 °C 30 seconds or less •Number of reflows Three•FluxRosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)P a c k ag e S u r f a c e T e m p e r a t u r e T (˚C )Time (s)Recommended Temperature Profile of Infrared Reflow(2) Dip soldering •Temperature 260 °C or below (molten solder temperature)•Time10 seconds or less •Number of times One•FluxRosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)Data Sheet P11309EJ5V0DS0010SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)ParameterSymbol Speck UnitApplication classification (DIN VDE 0109)for rated line voltages ≤ 300 Vr.m.s.IV for rated line voltages ≤ 600 Vr.m.s.III Climatic test class (DIN IEC 68 Teil 1/09.80)55/100/21Dielectric strengthMaximum operating isolation voltageU IORM 710V peak Test voltage (partial discharge test, procedure a for type test and random test)U pr850V peakU pr = 1.2 × U IORM , P d < 5 pCTest voltage (partial discharge test, procedure b for random test)U pr = 1.6 × U IORM , P d < 5 pC U pr 1 140V peakHighest permissible overvoltage U TR 6 000V peakDegree of pollution (DIN VDE 0109)2Clearance distance > 5mm Creepage distance> 5mmComparative tracking index (DIN IEC 112/VDE 0303 part 1)CTI 175Material group (DIN VDE 0109)III aStorage temperature range T stg –55 to +150°C Operating temperature range T A–55 to +100°CIsolation resistance, minimum value V IO = 500 V dc at T A = 25 °CRis MIN.1012ΩV IO = 500 V dc at T A MAX. at least 100 °CRis MIN.1011ΩSafety maximum ratings(maximum permissible in case of fault, see thermal derating curve)Package temperatureTsi 150°C Current (input current I F , Psi = 0)Isi 200mA Power (output or total power dissipation)Psi300mWIsolation resistanceV IO = 500 V dc at T A = 175 °C (Tsi)Ris MIN.109Ω[MEMO]Data Sheet P11309EJ5V0DS0011CAUTIONWithin this device there exists GaAs (Gallium Arsenide) material which is aharmful substance if ingested. Please do not under any circumstances break thehermetic seal.NEPOC is a trademark of NEC Corporation.No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.NEC devices are classified into the following three quality grades:"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronicequipment and industrial robotsSpecial: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.Anti-radioactive design is not implemented in this product.M4 96. 5This datasheet has been download from: Datasheets for electronics components.。

MIC22705YML EV评估板1MHz，7A集成开关高效同步斜坡调压电源MLF和MicroLea

MIC22705YML EV Evaluation Board1MHz, 7A Integrated Switch High-Efficiency Synchronous Buck RegulatorMLF and Micro Lead Frame are registered trademarks of Amkor Technology, Inc.Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel +1 (408) 944-0800 • fax + 1 (408) 474-1000 •General DescriptionThe Micrel MIC22705 is a high-efficiency, 7A, integrated switch, synchronous buck (step-down) regulator. The MIC22705 achieves more than 95% efficiency andswitches at 1MHz. The ultra-high speed control loop keepsthe output voltage within regulation even under the extreme transient load swings commonly found in FPGAs and low-voltage ASICs. The output voltage is pre-bias safeand is adjustable down to 0.7V. The MIC22705 offers a full range of sequencing and tracking options. The Enable/Delay (EN/DLY) and Power Good (PG) inputs allow versatile turn-on and turn-off sequencing across multiple devices. The Ramp Control™ (RC) input allows start-up voltage tracking, either directly or ratio-metrically. The MIC22705 is available in a 24-pin 4mm x 4mm MLF ®with a junction operating range from –40°C to +125°C. Data sheets and support documentation are found on the Micrel web site: . RequirementsThe MIC22705YML EV requires a power supply of 2.9V to 5.5V, and a test load. Ensure that the power supply can provide the wattage required for the chosen test load. Theload can be active (electronic load) or passive (resistor).Additionally, monitor the Power Good output (PG) with a multimeter or an oscilloscope if desired.PrecautionsThere is no reverse input protection on this board. When connecting supplies and signals ensure that correct polarities are observed.Getting Started 1. V INSuppliesConnect the V IN supply (2.9V to 5.5V) across the PVIN and PGND terminals. Monitor V IN at the PVIN and PGND terminals with a voltmeter.2. Enable/SHDN Inputs The enable input EN is internally pulled up with a 1µA current source. When external on/off control is desired, install Q1 and R5, and connect a logic level control signal to the SHDN input. When SHDN is high, the output is off, and when SHDN is low, the output is on.3. Monitor Outputs Monitor the output V OUT with a scope or DVM connectedacross the VOUT and PGND terminals. 4. Output LoadConnect a load across the VOUT and PGND terminals. Use an active or passive load.5. Turn On the Power Turn on the power supply and verify that V OUT = 1.8V. Ordering Information Part Number Description MIC22705YML EVEvaluation Board for the MIC22705YMLEV Board FeaturesSee the MIC22705YML datasheet for detailed explanations of these functions.Enable/Delay (EN/DLY)Enable/Delay allows delayed turn on of the MIC22705. Install a capacitor in location C6 to increase the start-up delay of the MIC22705.Shutdown Input (SHDN)SHDN allows enable/disable of the MIC22705 with an external logic signal. To activate the shutdown feature, install components into the locations labeled Q1 and R5 (component recommendations are listed in the Bill of Materials later in this document). With the components installed, force SHDN high to disable the MIC22705, and low to allow the MIC22705 to operate normally.Delay (DELAY)DELAY allows a delayed Power Good output (PG) indication. Install a capacitor in location C8 to increase the Power Good delay timing of the MIC22705. Ramp Control (RC)Ramp control allows slowing the slew rate of the MIC22705 output. Increase the value of capacitor C7 to reduce the slew rate.Power Good Output (PG)Open drain output PG pulls low when the output voltage of the MIC22705 is out of specification. PG is pulled up to V IN by a 47.5kΩ resistor.Switch Voltage (V SW)Test point V SW is provided to monitor the internal switching node. V SW is isolated from the switch node by 49.9Ωresistor R6.Typical CharacteristicsEvaluation Board SchematicBill of MaterialsItem Part Number Manufacturer DescriptionQty. C2012X5R0J226M TDK (1) 08056D226MAT AVX (2) C1, C2, C3, C4GRM21BR60J226ME39L Murata (3) 22µF/6.3V, 0805, Ceramic Capacitor506036D225TAAT2A AVX (2)2.2µF/6.3V, Ceramic Capacitor, X5R, Size 0805 GRM188R7160J225M Murata (3) 2.2µF/6.3V, Ceramic Capacitor, X7R, Size 0805 C5C1608X5R0J225M TDK (1)1C13 GRM188R71H103KA01D Murata (3)10nF, 0603, Ceramic Capacitor 1 Open(VJ0603Y102KXQCW1BC) Vishay (4) 1nF, 0603, Ceramic CapacitorOpen(GRM188R71H102KA01D) Murata (3) 1nF/50V, X7R, 0603, Ceramic Capacitor C7 Open(C1608C0G1H102J) TDK (1) 1nF/50V, COG, 0603, Ceramic Capacitor 1 C6, C8 OpenGRM1555C1H390JZ01D Murata (3) 39pF/50V, COG, 0402, Ceramic Capacitor C9VJ0402A390KXQCW1BCBCComponents (5)39pF /10V, 0402, Ceramic Capacitor 1 C3216X5R0J476M TDK (1)47µF/6.3V, X5R, 1206, Ceramic Capacitor GRM31CR60J476ME19 Murata (3)47µF/6.3V, X5R, 1206, Ceramic Capacitor C10, C11GRM31CC80G476ME19L Murata (3)47µF/4V, X6S, 1206, Ceramic Capacitor 2 VJ0402A101KXQCW1BC Vishay (4) 100pF, 0603, Ceramic CapacitorC12 GRM1555C1H101JZ01D Murata (3) 100pF/50V, COG, 0402, Ceramic Capacitor 1 SPM6530T-1R0M120 TDK (1) 1µH, 12A, size 7x6.5x3mm L1HCP0704-1R0-R Coiltronics (6)1µH, 12A, size 6.8x6.8x4.2mm 1 C IN BA1851A3477MEpcos (7) 470µF/10V, Elect., 8×11.5 1 R1 CRCW06031101FKEYE3 Vishay (4) Resistor, 1.10k, 0603, 1% 1 R2 CRCW04026980FKEYE3 Vishay (4) Resistor, 698Ω, 0603, 1%1 R3 CRCW06034752FKEYE3 Vishay (4) Resistor, 47.5k, 0603, 1% 1 R4 CRCW04022002FKEYE3 Vishay (4)Resistor, 20k, 0402, 1% 1 R5 Open(CRCW06031003FRT1) Vishay (4)Resistor, 100k, 0603, 1%1 R6 CRCW060349R9FKEA Vishay (4)49.9Ω Resistor, 1%, Size 0603 1 R7 CRCW06032R20FKEA Vishay (4) 2.2Ω Resistor, 1%, Size 06031 Open(2N7002E)Q1Open(CMDPM7002A) CentralSemiconductor (8)Signal MOSFET − SOT23-6 1 U1 MIC22705YMLMicrel, Inc.(6)1MHz, 7A Integrated Switch High-EfficiencySynchronous Buck Regulator1Notes:1. TDK: .2. AVX.: .3. Murata: .4. Vishay Tel: .5. BC Components: .6. Coiltronics: .7. Epcos: .8. Central Semiconductor: . 9. Micrel, Inc.: .Evaluation Board PCB LayoutMIC22705 Evaluation Board Top LayerMIC22705 Evaluation Board Top SilkMIC22705 Evaluation Board Mid-Layer 1 (Ground Plane)MIC22705 Evaluation Board Mid-Layer 2MIC22705 Evaluation Board Bottom LayerMIC22705 Evaluation Board Bottom Silk。

封隔器型号及工作原理

封隔器型号及工作原理封隔器（Isolator）型号及工作原理：1. 光学隔离器（Optical Isolator）：工作原理：光学隔离器是一种非对称设计的光学元件。

它通常由线偏振器、磁光晶体、磁场以及另一个线偏振器组成。

线偏振器可以选择性地允许特定方向的偏振光通过。

当光线通过第一个线偏振器时，只有特定方向的光能够通过，然后进入磁光晶体。

磁光晶体在施加磁场时会导致光线发生旋光，改变其偏振方向。

最后，经过线偏振器的光线会再次被过滤，只有特定方向的光能够通过，而其他方向的光则被阻隔。

这样，光学隔离器可以实现单向传输光信号，防止反射和回波。

2. 微波隔离器（Microwave Isolator）：工作原理：微波隔离器采用磁铁和非对称传输线的组合来实现信号的单向传输。

在正向传输方向，传输线可以有效地传输信号，而在反向传输方向，由于磁铁的阻挡作用，信号会被衰减或反射掉，从而达到隔离的效果。

3. RF隔离器（Radio Frequency Isolator）：工作原理：RF隔离器利用非线性元件的性质，将输入信号的频率分成两个频段。

其中一个频段被频率倍频，而另一个频段则被通过。

在输出端，倍频的频段具有较高的功率，而通过的频段功率较低。

由于非线性元件的特性，输入信号的反向传输被有效地阻止，实现了信号的单向传输和隔离。

4. 电气隔离器（Electrical Isolator）：工作原理：电气隔离器通常由电压或电流输入端和输出端之间的电气隔离元件构成。

这种隔离元件可以阻止电流或电压的双向传输，从而实现输入和输出之间的电气隔离。

常见的电气隔离器包括光耦合器、变压器等。

以上是一些常见的封隔器型号及其工作原理，它们在不同领域的电子、光电和通信等应用中发挥着重要的作用。

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DATA SHEETThe information in this document is subject to change without notice.©1988Document No. P11309EJ5V0DS00 (5th edition)Date Published December 1998 NS CP (K)Printed in JapanThe mark • shows major revised points.DESCRIPTIONThe PS2705-1, PS2705-2, PS2705-4 are optically coupled isolators containing two GaAs light emitting diodes and an NPN silicon phototransistor.These packages are SOP (Small Outline Package) type and have shield effect to cut off ambient light.They are designed for high density mounting applications.FEATURES•AC input response•High isolation voltage (BV = 3 750 Vr.m.s.)•High current transfer ratio (CTR = 100 % TYP.)•SOP (Small Outline Package) type•High-speed switching (t r = 3 µs TYP., t f = 5 µs TYP.)•Ordering number of taping product (Only-1 type) : PS2705-1-E3, E4, F3, F4•UL approved: File No. E72422 (S)•VDE0884 approved (Option)APPLICATIONS•Hybrid IC •Telephone/FAX •FA/OA equipment•Programmable logic controllers •Power supplyORDERING INFORMATIONPart Number Package Safety Standard ApprovalPS2705-14-pin SOP Standard products PS2705-28-pin SOP • UL approvedPS2705-416-pin SOP PS2705-1-V 4-pin SOP VDE0884 approved products (Option)PS2705-2-V 8-pin SOP PS2705-4-V16-pin SOPPACKAGE DIMENSIONS (in millimeters)2Data Sheet P11309EJ5V0DS00ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise specified)RatingsUnitParameter Symbol PS2705-1PS2705-2,PS2705-4Diode Forward Current (DC)I F± 50mAPower Dissipation Derating∆P D/°C0.8mW/°CPower Dissipation P D80mW/chPeak Forward Current*1I FP±1ATransistor Collector to Emitter Voltage V CEO40VEmitter to Collector Voltage V ECO6VCollector Current I C80mA/chPower Dissipation Derating∆P C/°C 1.5 1.2mW/°CPower Dissipation P C150120mW/chIsolation Voltage*2BV 3 750Vr.m.s.Operating Ambient Temperature T A–55 to +100°CStorage Temperature T stg–55 to +150°C*1PW = 100 µs, Duty Cycle = 1 %*2AC voltage for 1 minute at T A = 25 °C, RH = 60 % between input and outputData Sheet P11309EJ5V0DS003Data Sheet P11309EJ5V0DS004ELECTRICAL CHARACTERISTICS (T A = 25 °C)ParameterSymbol Conditions MIN.TYP.MAX.Unit DiodeForward Voltage V F I F = ± 5 mA 1.1 1.4V Terminal CapacitanceC t V = 0 V, f = 1 MHz 60pFTransistorCollector to EmitterCurrentI CEOI F = 0 mA, V CE = 40 V 100nACoupled Current Transfer Ratio(I C /I F )*1CTR I F = ± 5 mA, V CE = 5 V 50100300%CTR RatioCTR 1/CTR 2I F = ± 5 mA, V CE = 5 V 0.3 1.0 3.0Collector Saturation VoltageV CE (sat)I F = ± 10 mA, I C = 2 mA0.3V Isolation Resistance R I-O V I-O = 1 kV DC1011ΩIsolation Capacitance C I-O V = 0 V, f = 1 MHz0.4pFRise Time *2t r V CC = 5 V, I C = 2 mA, R L = 100 Ω3µsFall Time*2t f5*1CTR rank (only PS2705-1)M: 50 to 150 (%)L: 100 to 300 (%)N: 50 to 300 (%)*2CTR 1 = I C1/I F1, CTR 2 = I C2/I F2I F1I F2V CE*3Test circuit for switching timeCCOUTΩData Sheet P11309EJ5V0DS005TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise specified)1005025075255075100Ambient Temperature T A (˚C)D i o d e P o w e r D i s s i p a t i o n P D (m W )DIODE POWER DISSIPATION vs.AMBIENT TEMPERATURE20015010050025*******Ambient Temperature T A (˚C)T r a n s i s t o r P o w e r D i s s i p a t i o n P C (m W )TRANSISTOR POWER DISSIPATION vs.AMBIENT TEMPERATUREPS2705-11.5 mW/˚CPS2705-2,PS2705-41.2 mW/˚CForward Voltage V F (V)F o r w a r d C u r r e n t I F (m A )FORWARD CURRENT vs.FORWARD VOLTAGEAmbient Temperature T A (˚C)COLLECTOR TO EMITTER DARKCURRENT vs. AMBIENT TEMPERATUREC o l l e c t o r t o E m i t t e rD a r k C u r r e n t I CE O (n A )Collector Saturation Voltage V CE (sat) (V)C o l l e c t o r C u r r e n t I C (m A )COLLECTOR CURRENT vs.COLLECTOR SATURATION VOLTAGEFORWARD CURRENT vs.FORWARD VOLTAGEForward Voltage V F (V)F o r w a r d C u r r e n t I F (m A )806040200–40–60–80–20–1.200.4 1.2 1.6–1.6–0.8–0.40.8Data Sheet P11309EJ5V0DS0061.20.60.00.81.00.40.202550100–50–2575Ambient Temperature T A (˚C)NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATUREN o r m a l i z e d C u r r e n t T r a n s f e r R a t i o C T RNormalized to 1.0 at T A = 25 ˚C,I F = 5 mA, V CE = 5 V3002501505002001000.050.55500.1110Forward Current I F (mA)C u r r e n t T r a n s f e r R a t i o C T R (%)CURRENT TRANSFER RATIO vs.FORWARD CURRENTV CE = 5 VLoad Resistance R L (Ω)SWITCHING TIME vs.LOAD RESISTANCES w i t c h i n gT i m e t ( s )µLoad Resistance R L (Ω)SWITCHING TIME vs.LOAD RESISTANCES w i t c h i n g T i m e t (s )µFrequency f (kHz)N o rm a l i z e d G a i n G VFREQUENCY RESPONSECollector to Emitter Voltage V CE (V)C o l l e c t o r C u r r e n t I C (m A )COLLECTOR CURRENT vs.COLLECTOR TO EMITTER VOLTAGEData Sheet P11309EJ5V0DS0076Time (Hr)LONG TERM CTR DEGRADATIONC T R (R e l a t i v e V a l u e )Remark The graphs indicate nominal characteristics.TAPING SPECIFICATIONS (in millimeters)8Data Sheet P11309EJ5V0DS00Data Sheet P11309EJ5V0DS009RECOMMENDED SOLDERING CONDITIONS(1) Infrared reflow soldering •Peak reflow temperature235 °C (package surface temperature)•Time of temperature higher than 210 °C 30 seconds or less •Number of reflows Three•FluxRosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)P a c k ag e S u r f a c e T e m p e r a t u r e T (˚C )Time (s)Recommended Temperature Profile of Infrared Reflow(2) Dip soldering •Temperature 260 °C or below (molten solder temperature)•Time10 seconds or less •Number of times One•FluxRosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)Parameter Symbol Speck Unit Application classification (DIN VDE 0109)for rated line voltages ≤ 300 Vr.m.s.IVfor rated line voltages ≤ 600 Vr.m.s.IIIClimatic test class (DIN IEC 68 Teil 1/09.80)55/100/21Dielectric strengthMaximum operating isolation voltage U IORM710V peak Test voltage (partial discharge test, procedure a for type test and random test)U pr850V peak U pr = 1.2 × U IORM, P d < 5 pCU pr 1 140V peak Test voltage (partial discharge test, procedure b for random test)U pr = 1.6 × U IORM, P d < 5 pCHighest permissible overvoltage U TR 6 000V peak Degree of pollution (DIN VDE 0109)2Clearance distance> 5mm Creepage distance> 5mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1)CTI175Material group (DIN VDE 0109)III aStorage temperature range T stg–55 to +150°C Operating temperature range T A–55 to +100°C Isolation resistance, minimum valueV IO = 500 V dc at T A = 25 °C Ris MIN.1012ΩV IO = 500 V dc at T A MAX. at least 100 °C Ris MIN.1011ΩSafety maximum ratings(maximum permissible in case of fault, see thermal derating curve)Package temperature Tsi150°C Current (input current I F, Psi = 0)Isi200mA Power (output or total power dissipation)Psi300mW Isolation resistanceV IO = 500 V dc at T A = 175 °C (Tsi)Ris MIN.109Ω10Data Sheet P11309EJ5V0DS00[MEMO]Data Sheet P11309EJ5V0DS0011CAUTIONWithin this device there exists GaAs (Gallium Arsenide) material which is aharmful substance if ingested. Please do not under any circumstances break thehermetic seal.NEPOC is a trademark of NEC Corporation.No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.NEC devices are classified into the following three quality grades:"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronicequipment and industrial robotsSpecial: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.Anti-radioactive design is not implemented in this product.M4 96. 5。