MMBF4392

合集下载

贴片元件代码查询(根据代码查找芯片型号)

Manufacturer abbreviations:Agi Agilent (was HP).ON ON Semiconductors (was Motorola). CJe Changjiang Electronics CO., LTD Phi Philips.Dio Diodes Inc.--Fch Fairchild.Roh Rohm.HP Hewlett-Packard (Now Agilent).SGS SGS-Thompson.Inf Infineon (was Siemens).Sie Siemens (now Infineon).ITT ITT Semiconductors.Sil Siliconix (Vishay-Silliconix).MC Mini-Circuits.STM STMicroelectronicsMot Motorola (now ON Semiconductors).Tem Temic Semiconductors.Nat National Semiconductor.Tfk Telefunken (Vishay-Telefunken). Nec NEC.Tok Toko Inc.NJRC New Japan Radio Co.Zet Zetex.制作：Ｃｏｏｌｂｏｒ　ＸｉｅＣｏｏｌｂｏｒ工作室Ｅ－Ｍａｉｌ：ｃｏｏｌｂｏｒ＠１６３．ｃｏｍ２００３年１２月１０日Code Device Manufacturer Base Package Leaded Equivalent/Data0 2SC3603 Nec CX SOT173 N pn RF fT 7GHz005 SSTPAD5 Sil J -PAD-5 5pA leakage diodep01 PDTA143ET Phi N SOT23 pnp dtr 4k7+4k7t01 PDTA143ET Phi N SOT23 pnp dtr 4k7+4k701 Gali-1 MC AZ SOT89 DC-8GHz MMIC amp 12dB gain 010 SSTPAD10 Sil J - PAD-10 10pA leakage diode 011 SO2369R SGS R SOT23R 2N236902 BST82 Phi M - n-ch mosfet 80V 175mA02 MRF5711L Mot X SOT143 npn RF MRF57102 DTCC114T Roh N - 50V 100mA npn sw + 10k base res 02 Gali-2 MC AZ SOT89 DC-8GHz MMIC amp 16dB gain p02 PDTC143ET Phi N SOT23 npn 4k7+4k7 bias rest02 PDTC143ET Phi N SOT23 npn 4k7+4k7 bias res03 Gali-3 MC AZ SOT89 DC-3GHz MMIC amp 22dB gain 03 DTC143TE Roh N EMT3 npn dtr R1 4k7 50V 100mA03 DTC143TUA Roh N SC70 npn dtr R1 4k7 50V 100mA03 DTC143TKA Roh N SC59 npn dtr R1 4k7 50V 100mA04 DTC114TCA Roh N SOT23 npn dtr R1 10k 50V 100mA04 DTC114TE Roh N EMT3 npn dtr R1 10k 50V 100mA04 DTC114TUA Roh N SC70 npn dtr R1 10k 50V 100mA04 DTC114TKA Roh N SC59 npn dtr R1 10k 50V 100mA04 MRF5211L Mot X SOT143 pnp RF MRF52104 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 17.5 dBm -04 PMSS3904 Phi N SOT323 2N3904t04 PMBS3904 Phi N SOT23 2N390405 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 18 dBm o/p 05 DTC124TE Roh N EMT3 npn dtr R1 22k 50V 100mA05 DTC124TUA Roh N SC70 npn dtr R1 22k 50V 100mA05 DTC124TKA Roh N SC59 npn dtr R1 22k 50V 100mA05F TSDF1205R Tfk WQ - fT12GHz npn 4V 5mA06 Gali-6 MC AZ SOT89 DC-4GHz MMIC amp 115 dBm o/p 06 DTC144TE Roh N EMT3 npn dtr R1 47k 50V 100mA06 DTC144TUA Roh N SC70 npn dtr R1 47k 50V 100mA06 DTC144TKA Roh N SC59 npn dtr R1 47k 50V 100mA-06 PMSS3906 Phi N SOT323 2N3906t06 PMBS3906 Phi N SOT23 2N3906020 SSTPAD20 Sil J - PAD-20 20pA leakage diode 050 SSTPAD50 Sil J - PAD-50 50pA leakage diode 081 SO2369AR SGS R SOT23R 2N2369A09 DTC115TUA Roh N SC70 npn dtr R2 100k 50V 100mA09 DTC115TKA Roh N SC59 npn dtr R2 100k 50V 100mA0A MUN5111DW1 Mot DO SOT363 dual pnp dtr 10k+10k0A DTC125TUA Roh N SC70 npn dtr R2 100k 50V 100mA0A DTC125TKA Roh N SC59 npn dtr R2 100k 50V 100mA0B MUN5112DW1 Mot DO SOT363 dual pnp dtr 22k+22k0C MUN5113DW1 Mot DO SOT363 dual pnp dtr 47k+47k0D MUN5114DW1 Mot DO SOT363 dual pnp dtr 10k+47k0E MUN5115DW1 Mot DO SOT363 dual pnp dtr R1 10k0F MUN5116DW1 Mot DO SOT363 dual pnp dtr R1 4k70G MUN5130DW1 Mot DO SOT363 dual pnp dtr 1k0+1k00H MUN5131DW1 Mot DO SOT363 dual pnp dtr 2k2+2k20J MUN5132DW1 Mot DO SOT363 dual pnp dtr 4k7+4k70K MUN5133DW1 Mot DO SOT363 dual pnp dtr 4k7+47k0L MUN5134DW1 Mot DO SOT363 dual pnp dtr 22k+47k0M MUN5135DW1 Mot DO SOT363 dual pnp dtr 2k2+47kCode Device Manufacturer Base Package Leaded Equivalent/Data12SC3587Nec CX -npn RF fT10GHz1BA277Phi I SOD523VHF Tuner band switch diode1 (red)BB669Sie I SOD32356-2.7 pF varicap10MRF9411L Mot X SOT143npn Rf 8GHz MRF94110A PZM10NB2A Phi A SOT346dual ca 10V 0.3W zener10A ZXRE1004FF Zet G SOT23Micropower (4µA) 1.22V Voltage ref. 3% 10B ZXRE1004EF Zet G SOT23Micropower (4µA) 1.22V Voltage ref. 2% 10C ZXRE1004DF Zet G SOT23Micropower (4µA) 1.22V Voltage ref. 1% 10D ZXRE1004CF Zet G SOT23Micropower (4µA) 1.22V Voltage ref. 0.5% 10F ZXRE4041FF Zet G SOT23Micropower 1.222V Voltage ref. 3%10G ZXRE4041EF Zet G SOT23Micropower 1.222V Voltage ref. 2%10H ZXRE4041DF Zet G SOT23Micropower 1.222V Voltage ref. 1%10J ZXRE4041CF Zet G SOT23Micropower 1.222V Voltage ref. 0,5% 10V PZM10NB Phi C SOT34610V 0.3W zener10Y BZV49-C10Phi O SOT8910V 1W zener11MRF9511L Mot X SOT143npn RF 8GHz MRF95111MUN5311DW1Mot DP SOT363npn/pnp dtr 10k+10k11PDTA114EU Phi N SOT416pnp dtrp11PDTA114TT Phi N SOT23pnp dtrt11PDTA114TT Phi N SOT23pnp dtr11A PZM11NB2A Phi A SOT346dual ca 11V 0.3W zener11A MMBD1501A Nat C SOT23Si diode 200V 100mA11V PZM11NB Phi C SOT34611V 0.3W zener11Y BZV49-C11Phi O SOT8911V 1W zener12MUN5312DW1Mot DP SOT363npn/pnp dtr 22k+22k12DTA123EUA Rho N SC70pnp dtr 2k2+2k2 50V 100ma12DTA123EKA Rho N SC59pnp dtr 2k2+2k2 res 50V 100map12PDTC114TT Phi N SOT23npn dtrt12PDTC114TT Phi N SOT23npn dtr12A MMBD1502A Nat K SOT23Si diode 200V 100mA12A PZM12NB2A Phi A SOT346dual ca 12V 0.3W zener12E ZC2812E Zet D SOT23dual series RF schottky15V 20mA12F ZXRE125FF ZET G SOT23Micropower 1.22V Voltage ref. 3%12G ZXRE125EF ZET G SOT23Micropower 1.22V Voltage ref. 2%12H ZXRE125DF ZET G SOT23Micropower 1.22V Voltage ref. 1%12J ZXRE125CF ZET G SOT23Micropower 1.22V Voltage ref. 0,5%12V PZM12NB Phi C SOT34612V 0.3W zener12Y BZV49-C12Phi O SOT8912V 1W zener13DTA143EUA Rho N SC70pnp dtr 4k7+4k7 50V 100ma13DTA143EKA Rho N SC59pnp dtr 4k7+4k7 50V 100ma13DTA143ECA Rho N SOT23pnp dtr 4k7+4k7 50V 100ma13t BC846BPN Phi N SOT363BC546B13s BAS125Sie C SOT23Schottky sw 24V 100mA13s BAS125W Sie C SOT323Schottky sw 24V 100mA13MA4CS103A M/A C SOT23Schottky RF 20V 100mA13MUN5313DW1Mot DP SOT363npn/pnp dtr 47k+47k13A MMBD1503A Nat D SOT23dual Si diode 200V 100mA13A PZM13NB2A Phi A SOT346dual ca 13V 0.3W zener13E ZC2813E Zet A SOT23dual ca RF schottky15V 20mA13V PZM13NB Phi C SOT34613V 0.3W zener13Y BZV49-C13Phi O SOT8913V 1W zener14s BAS125-04Sie D SOT23Dual series Schottky 25V 100mA14s BAS125-04W Sie D SOT323Dual series Schottky 25V 100mA14BAT114-099R Sie DQ -Quad Schottky crossover ring14DTA114EUA Roh N SC70pnp dtr 10k + 10k14DTA114EKA Roh N SC59pnp dtr 10k + 10k14MUN5314DW1Mot DP SOT363npn/pnp dtr 10k R114DTA114ECA Roh N SOT23pnp dtr 10k + 10k14A MMBD1504A Nat B -dual cc Si diode 200V 100mA15s BAS125-05Sie B SOT23dual cc Schottky 25V 100mA15s BAS125-05W Sie B SOT323dual cc Schottky 25V 100mA15DTA124EUA Roh N SC70pnp dtr 30V 50mA 22k+22k15DTA124EKA Roh N SC59pnp dtr 30V 50mA 22k+22k15DTA124ECA Roh N SOT23pnp dtr 30V 50mA 22k+22k15MUN5315DW1Mot DP SOT363npn/pnp dtr 10k R115MMBT3960Mot N -2N396015A MMBD1505A Nat A -dual ca Si diode 200V 100mA 15A PZM15NB2A Phi A SOT346dual ca 15V 0.3W zener15V PZM15NB Phi C SOT34615V 0.3W zener15Y BZV49-C15Phi O SOT8915V 1W zenerp16PDTC114ET Phi N SOT23npn dtrt16PDTC114EU Phi N SOT323npn dtr16s BAS125-06Sie A SOT23dual ca Schottky 25V 100mA 16s BAS125-06W Sie A SOT323dual ca Schottky 25V 100mA 16MUN5316DW1Mot DP SOT363npn/pnp dtr 4k7 R116DTA144EUA Roh N SC70pnp dtr 30V 50mA 47k+47k 16DTA144EKA Roh N SC59pnp dtr 30V 50mA 47k+47k 16V PZM16NB Phi C SOT34616V 0.3W zener16Y BZV49-C16Phi O SOT8916V 1W zener17s BAS125-07Sie S SOT143dual Schottky 25V 100mA 17s BAS125-07W Sie S SOT343dual Schottky 25V 100mAp17PDTC124ET Phi N SOT23npn dtrt17PDTC124EU Phi N SOT323npn dtr18BFP181T Tfk X -npn Rf fT 7.8GHz 10V 20mA 18PDTC143ZK Phi N SOT346npn dtr 4k7+47kp18PDTC143ZT Phi N SOT23npn dtr 4k7+47kt18PDTC143ZT Phi N SOT23npn dtr 4k7+47k18V PZM18NB Phi C SOT34618V 0.3W zener18Y BZV49-C18Phi O SOT8918V 1W zener19PDTA143ZK Phi N SOT346pnp dtr 4k7+47k19DTA115EUA Rho N SC70pnp dtr 100k+100k 50V 100ma 19DTA115EKA Rho N SC59pnp dtr 100k+100k 50V 100ma p19PDTA143ZT Phi N SOT23pnp dtr 4k7+47kt19PDTA143ZT Phi N SOT23pnp dtr 4k7+47k100SSTPAD100Sil J SOT23PAD-100 100pA leakage diode 101PZM10NB1Phi C SOT34610V 0.3W zener102PZM10NB2Phi C SOT34610V 0.3W zener103PZM10NB3Phi C SOT34610V 0.3W zener111PZM11NB1Phi C SOT34611V 0.3W zener111DTA113ZUA Roh N SC70pnp dtr 1k+10k 50V 100mA 112PZM11NB2Phi C SOT34611V 0.3W zener113PZM11NB3Phi C SOT34611V 0.3W zener113DTA143ZUA Roh N SC70pnp dtr 4k7+47k 50V 100mA 121PZM12NB1Phi C SOT34612V 0.3W zener121DTC113ZUA Roh N SC70npn dtr 1k+10k 50V 100mA 122PZM12NB2Phi C SOT34612V 0.3W zener123PZM12NB3Phi C SOT34612V 0.3W zener123DTC143ZUA Roh N SC70npn dtr 4k7+47k 50V 100mA 131PZM13NB1Phi C SOT34613V 0.3W zener132PZM13NB2Phi C SOT34613V 0.3W zener132DTA123JUA Roh N SC70pnp dtr 2k2+47k 50V 100mA 133PZM13NB3Phi C SOT34613V 0.3W zener142DTA123JUA Roh N SC70npn dtr 2k2+47k 50V 100mA 151PZM15NB1Phi C SOT34615V 0.3W zener152PZM15NB2Phi C SOT34615V 0.3W zener153PZM15NB3Phi C SOT34615V 0.3W zener156DTA144VUA Roh N SC70pnp dtr 47k+10k 50V 100mA 161PZM16NB1Phi C SOT34616V 0.3W zener162PZM16NB2Phi C SOT34616V 0.3W zener163PZM16NB3Phi C SOT34616V 0.3W zener166DTC144VUA Roh N SC70npn dtr 47k+10k 50V 100mA 179FMMT5179Zet N -2N5179181PZM18NB1Phi C SOT34618V 0.3W zener182PZM18NB2Phi C SOT34618V 0.3W zener183PZM18NB3Phi C SOT34618V 0.3W zener1A BC846A Phi N SOT23BC546A1A BC846AT Phi N SOT416BC546A1Ap BC846A Phi N SOT23BC546A1At BC846A Phi N SOT23BC546A1At BC846AW Phi N SOT323BC546A1A-BC846AW Phi N SOT323BC546A1A FMMT3904Zet N SOT232N39041A MMBT3904Mot N SOT232N39041A IRLML2402IR F SOT23n-ch mosfet 20V 0.9Ap1A PMMT3904Phi N SOT232N3904p1A PXT3904Phi N SOT892N3904t1A PMMT3904Phi N SOT232N3904t1A PMST3904Phi N SOT3232N3904-1A PMST3904Phi N SOT3232N39041AM MMBT3904L Mot N SOT232N39041B BC846B Phi N SOT23BC546B1B BC846BT Phi N SOT416BC546B1Bp BC846B Phi N SOT23BC546B1Bt BC846B Phi N SOT23BC546B1Bt BC846BW Phi N SOT323BC546B1B-BC846BW Phi N SOT323BC546B1B FMMT2222Zet N SOT232N22221B MMBT2222Mot N SOT232N22221B IRLML2803IR F SOT23n-ch mosfet 30V 0.9Ap1B PMBT2222Phi N SOT232N2222t1B PMBT2222Phi N SOT232N2222t1B PMST2222Phi N SOT2332N2222-1B PMST2222Phi N SOT3232N22221Bs BC817UPN Sie N SC74-1Cp BAP50-05Phi B SOT23dual cc GP RF pin diode 1C FMMT-A20Zet N SOT23MPSA201C MMBTA20L Mot N SOT23MPS39041C IRLML6302IR F SOT23p-ch mosfet 20V 0.6A1Cs BC847S Sie-SOT363BC4571Dp BC846Phi N SOT23BC4561Dt BC846Phi N SOT23BC4561Dt BC846W Phi N SOT323BC4561D-BC846W Phi N SOT323BC4561D MMBTA42Mot N SOT23MPSA42 300V npn1D IRLML5103IR F SOT23p-ch mosfet 30V 0.6Ap1D PMBTA42Phi N SOT23MPSA42 300V npnp1D PXTA42Phi N SOT89MPSA42 300V npnt1D PMBTA42Phi N SOT23MPSA42 300V npnt1D PMSTA42Phi N SOT323MPSA42 300V npn1Ds BC846U Sie N SC74BC4561Ds BC846U Sie-SOT363BC4561DN2SC4083Roh N -npn 11V 3.2GHz TV tuners 1DR MSD1328R Mot N SOT346npn gp 25V 500mA1E BC847A Phi N SOT23BC547A1E BC847AT Phi N SOT416BC547A1Ep BC847A Phi N SOT23BC547A1Et BC847A Phi N SOT23BC547A1Et BC847A Phi N SOT323BC547A1E-BC847A Phi N SOT323BC547A1ER BC847AR Phi R SOT23R BC547A1E FMMT-A43Zet N -MPSA431E MMBTA43Mot N SOT23MPSA43 200V npnt1E PMBTA43Mot N SOT23MPSA43 200V npnt1E PMSTA43Mot N SOT323MPSA43 200V npn1Es BC847A Sie N SOT23BC4571Es BC847AW Sie N SOT323BC4571EN2SC4084Roh N -npn 20V 2.0GHz TV tuners 1F BC847B Phi N SOT23BC547B1F BC847BT Phi N SOT416BC547B1Fs BC847B Sie N SOT23BC547B1Fs BC847BT Sie N SC75BC547B1Fs BC847BW Sie N SOT323BC547B1Fp BC847B Phi N SOT23BC547B1Ft BC847B Phi N SOT23BC547B1Ft BC847BW Phi N SOT323BC547B1F-BC847BW Phi N SOT323BC547B1FR BC847BR Phi R SOT23R BC547B1F MMBT5550Mot N SOT232N5550 140V npnp1F PMBT5550Phi N SOT232N5550 140V npnt1F PMBT5550Phi N SOT232N5550 140V npnt1F PMST5550Phi N SOT3232N5550 140V npn1FZ FMBT5550Zet N SOT232N5550 140V npn1G BC847C Phi N SOT23BC547C1G BC847CT Phi N SOT416BC547C1Gp BC847C Phi N SOT23BC547C1Gt BC847CW Phi N SOT323BC547C1G-BC847CW Phi N SOT323BC547C1Gs BC847C Sie N SOT23BC547C1Gs BC847CW Sie N SOT323BC547C1GR BC847CR Phi R SOT23R BC547C1GT SOA06SGS N SOT23MPSA061G FMMT-A06Zet N SOT23MPSA061G MMBTA06Mot N SOT23MPSA06p1G PMMTA06Phi N SOT23MPSA06t1G PMMTA06Phi N SOT23MPSA06t1G PMMTA06Phi N SOT323MPSA061GM MMBTA06Mot N SOT23MPSA061Hp BC847Phi N SOT23BC5471Ht BC847Phi N SOT23BC5471Ht BC847W Phi N SOT323BC5471H-BC847W Phi N SOT323BC5471H FMMT-A05Zet N -MPSA051H MMBTA05Mot N SOT23MPSA05t1H MMBTA05Phi N SOT323MPSA051HT SOA05SGS N SOT23MPSA051J BC848A Phi N SOT23BC548A1Js BC848A Sie N SOT23BC548A1Js BC848AW Sie N SOT323BC548A1J FMMT2369Zet N SOT232N23691J MMBT2369Mot N SOT23MPS23691Js BCV61A Sie VQ SOT143npn current mirror hFe 180 1Jp BCV61A Phi VQ SOT143npn current mirror hFe 180 p1J PMBT2369Phi N SOT232N2369t1J PMBT2369Phi N SOT232N2369t1J PMBT2369Phi N SOT3232N23691JA MMBT2369A Mot N SOT23MPS2369A1JR BC848AR Phi R SOT23R BC548A1JZ BC848A Zet N SOT23BC548A1K BC848B ITT N SOT23BC548B1Kp BC848B Phi N SOT23BC548B1Ks BC848B Sie N SOT23BC548B1Ks BC848BW Sie N SOT323BC548B1K MMBT6428Mot N SOT23MPSA18 50Vp1K PMBT6428Phi N SOT23MPSA18 50Vt1K PMBT6428Phi N SOT23MPSA18 50Vt1K PMBT6428Phi N SOT323MPSA18 50V1K FMMT4400Zet N SOT232N44001Ks BCV61B Sie VQ SOT143B npn current mirror hFe 290 1Kp BCV61B Phi VQ SOT143B npn current mirror hFe 290 1KR BC848BR Phi R SOT23R BC548B1KM MMBT6428L Mot N SOT23MPSA18 50V1KZ FMMT4400Zet N SOT232N44001L BC848C ITT N SOT23BC548C1Lp BC848C Phi N SOT23BC548C1Ls BC848C Sie N SOT23BC548C1Ls BC848CW Sie N SOT323BC548C1L MMBT6429Mot N -MPSA18 45V1L FMMT4401Zet N -2N44011L BCV61C Sie VQ SOT143B npn current mirror hFe 520 1Lp BCV61C Phi VQ SOT143B npn current mirror hFe 520 p1L PMBT6429Phi N SOT23MPSA18 45Vt1L PMBT6429Phi N SOT23MPSA18 45Vt1L PMBT6429Phi N SOT323MPSA18 45V1LR BC848CR Phi R SOT23R BC548C1Mp BC848Phi N SOT23BC5481M MMBTA13Mot N SOT23MPSA13 darlington1Mp BCV61Phi VQ SOT143B npn current mirror1M FMMT-A13Zet N SOT23MPSA13p1M PXTA13Phi N SOT89MPSA13 darlingtonp1M PMBTA13Phi N SOT23MPSA13 darlingtont1M PMBTA13Phi N SOT23MPSA13 darlington1N FMMT-A14Zet N SOT23MPSA141N MMBTA14Mot N SOT23MPSA14 darlington1N5ZTX11N15DF Zet N SOT23npn 15V 3A low saturation V p1N PMBTA14Mot N SOT23MPSA14 darlingtonp1N PXTA14Mot N SOT89MPSA14 darlingtont1N PMBTA14Mot N SOT23MPSA14 darlington1P FMMT2222A Zet N -2N2222A1P MMBT2222A Mot N SOT232N2222A1P BC847PN Sie DI -pnp/npn separate pair gp AF p1P PMBT2222A Phi N SOT232N2222Ap1P PXT2222A Phi N SOT892N2222At1P PMBT2222A Phi N SOT232N2222At1P PMST2222A Phi N SOT3232N2222A1Q MMBT5088Mot N SOT23MPSA18 Vce 30Vp1Q PMBT5088Phi N SOT23MPSA18 Vce 30Vt1Q PMBT5088Phi N SOT23MPSA18 Vce 30Vt1Q PMST5088Phi N SOT323MPSA18 Vce 30V1R MMBT5089Mot N SOT23MPSA18 Vce 25Vt1R PMST5089Phi N SOT323MPSA18 Vce 25V1S MMBT2369A Nat N SOT232N2369A 500MHz sw npn 1S MSC3130Mot H SOT346npn RF fT 1.4GHz 10V1T MMBT3960A Mot N -2N3960A1U MMBT2484L Mot N SOT23MPSA181V MMBT6427Mot H SOT232N6426/7 darlington npn 1Vp BF820Phi N SOT23npn 300V 50mA BF4201Vt BF820Phi N SOT23npn 300V 50mA BF4201Vt BF820W Phi N SOT323npn 300V 50mA BF4201V-BF820W Phi N SOT323npn 300V 50mA BF4201W FMMT3903Zet N SOT232N39031Wp BF821Phi N SOT23pnp 300V 50mA BF4211Wt BF821Phi N SOT23pnp 300V 50mA BF4211W t BF822W Phi N SOT323pnp 300V 50mA BF4211W -BF822W Phi N SOT323pnp 300V 50mA BF4211X MMBT930L Mot N SOT23MPS39041Xp BF822Phi N SOT23npn 250V 50mA BF4221Xt BF822Phi N SOT23npn 250V 50mA BF4221Y MMBT3903Mot N SOT232N39031Yp BF823Phi N SOT23pnp 250V 50mA BF4231Yt BF823Phi N SOT23pnp 250V 50mA BF4231Z BAS70-06Zet A SOT23dual RF CA schottky diode 1Z MMBT6517Mot N SOT232N6517 npn Vce 350VCode Device Manufacturer Base Package Leaded Equivalent/Data2BAT62-02W Sie I SCD80BAT16 schottky diode2 (blue)BAR64-03W Sie I SOD323pin diode22SC3604Nec CX -npn RF fT8GHz 12dB@2GHz2 (white) BB439Sie I SOD32329-5 pF varicap20MRF5811Mot X SOT143npn Rf fT 5GHz 0.2A-20PDTC114WU Phi N SOT323npn dtr20F TSDF1220Tfk X SOT143fT 12GHz npn 6V 20mA20V PZM20NB Phi C SOT34620V 300mW zener20Y BZV49-C20Phi O SOT8920V 1W zener21Gali-21MC AZ SOT89DC-8GHz MMIC amp 14 dB gain 22MMBT4209Nat N SOT23pnp sw 850MHz 2N420922DTC123EUA Rho N SC70npn dtr 2k2+2k2 50V 100ma 22DTC123EKA Rho N SC59npn dtr 2k2+2k2 50V 100ma 22V PZM22NB Phi C SOT34622V 300mW zener22Y BZV49-C22Phi O SOT8922V 1W zener23MMBT3646Nat N SOT23npn sw 350MHz 2N364623DTC143EUA Roh N SC70pnp dtr 50V 100mA 4k7+ 4k7 23DTC143EKA Roh N SC59pnp dtr 50V 100mA 4k7+ 4k7 -23PDTA114TU Phi N SOT323pnp dtr R1 10kt23PDTA114TU Phi N SOT323pnp dtr R1 10k24MMBD2101Nat C SOT23Si diode 100V 200mA23U TK61023S Tok-SOT23-5Voltage detector23U TK16123Tok-SOT23L ADJ Digital Delay Line24DTC114ECA Roh N SOT23npn dtr 50V 100mA 10k + 10k 24DTC114EUA Roh N SC70npn dtr 50V 100mA 10k + 10k 24DTC114EKA Roh N SC59npn dtr 50V 100mA 10k + 10k 242SC5006Nec N -npn RF fT 4.5GHz @3V 7mA 24F ZHT2431F02Zet H SOT23High temp. Adjustable zener shunt Reg.-24PDTC114TU Phi N SOT323npn dtr R1 10kt24PDTC114TU Phi N SOT323npn dtr R1 10k24V PZM24NB Phi C SOT34624V 300mW Zener24Y BZV49-C24Phi O SOT8924V 1W zener25MMBD2102Nat K SOT23Si diode 100V 200mA25DTC124ECA Roh N SOT23npn dtr 50V 100mA 22k + 22k 25DTC124EKA Roh N SC59npn dtr 50V 100mA 22k + 22k 25DTC124EUA Roh N SC70npn dtr 50V 100mA 22k + 22k 25U TK61025S Tok-SOT23-5Voltage detector26MMBD2103Nat D SOT23dual MMBD120126DTC144EKA Roh N SC59npn dtr 50V 30mA 47k + 47k 26DTC144EUA Roh N SC70npn dtr 50V 30mA 47k + 47k 27MMBD2104Nat B SOT23dual cc MMBD120127U TK61027S Tok-SOT23-5Voltage detector27V PZM27NB Phi C SOT34627V 300mW Zener27Y BZV49-C27Phi O SOT8927V 1W zener28BFP280T Tfk W -npn RF fT 7GHz 8V 10mA 28MMBD2105Nat A SOT23dual ca MMBD1201-28PDTA114WU Phi N SOT323pnp dtr29MMBD1401Nat C SOT23Si diode 200V 100mA29DTC115EE Roh N EMT3npn dtr 100k +100k 50V 20mA 29DTC115EUA Roh N SC70npn dtr 100k +100k 50V 20mA 29DTC115EKA Roh N SC59npn dtr 100k +100k 50V 20mA 200SSTPAD200Sil J -PAD-200 200pA leakage diode 201PZM20NB1Phi C SOT34620V 300mW Zener202PZM20NB2Phi C SOT34620V 300mW Zener203PZM20NB3Phi C SOT34620V 300mW Zener221PZM22NB1Phi C SOT34622V 300mW Zener222PZM22NB2Phi C SOT34622V 300mW Zener223PZM22NB3Phi C SOT34622V 300mW Zener241PZM24NB Phi C SOT34624V 300mW Zener242PZM24NB Phi C SOT34624V 300mW Zener243PZM20NB Phi C SOT34624V 300mW Zener271PZM2.7NB1Phi C SOT346 2.7V 300mW Zener272PZM2.7NB2Phi C SOT346 2.7V 300mW Zener2A MMBT3906L Mot N SOT232N39062A MMBT3906W Mot N SOT3232N39062A FMMT3906Zet N SOT232N3906t2A PMBT3906Phi N SOT232N3906t2A PMST3906Phi N SOT3232N3906p2A PMBT3906Phi N SOT232N3906p2A PXT3906Phi O SOT892N39062A4PZM2.4NB2A Phi A SOT346dual 2.4V cc Zener2A7PZM2.7NB2A Phi A SOT346dual 2.7V cc Zener2B BC849B ITT N SOT23BC549B2Bs BC849B Sie N SOT23BC549B2Bs BC849BW Sie N SOT323BC549B2Bp BC849B Phi N SOT23BC549B2Bt BC849BW Phi N SOT323 BC549B2B-BC849BW Phi N SOT323 BC549B2B FMMT2907Zet N SOT232N29072B MMBT2907Mot N SOT23MPS2907p2B PMBT2907Phi N SOT232N2907t2B PMBT2907Phi N SOT232N29072BR BC849BR Phi R SOT23R BC549B2BZ FMMT2907Zet N SOT232N29072C BC849C ITT N SOT23BC549C2Cs BC849C Sie N SOT23BC549C2Cs BC849CW Sie N SOT323BC549C2Cp BC849C Phi N SOT23BC549C2Ct BC849C Phi N SOT23BC549C2Ct BC849CW Phi N SOT323BC549C2C-BC849CW Phi N SOT323BC549C2C MMBTA70Mot N SOT23MPSA702CR BC849CR Phi R SOT23R BC549C2CZ FMMTA70Zet N SOT23MPSA702D MMBTA92Mot N SOT23MPSA92 pnp Vce 300Vp2D PMBTA92Phi N SOT23MPSA92 pnp Vce 300Vp2D PXTA92Phi O SOT89MPSA92 pnp Vce 300Vt2D PMBTA92Phi N SOT23MPSA92 pnp Vce 300Vt2D PMSTA92Phi N SOT323MPSA92 pnp Vce 300V2E MMBTA93Mot N SOT23MPSA93 pnp Vce 200V2E FMMT-A93Zet N SOT23MPSA93t2E PMBTA93Phi N SOT23MPSA93 pnp Vce 200Vt2E PMSTA93Phi N SOT323MPSA93 pnp Vce 200V2F BC850B ITT N SOT23 BC550B2Fs BC850B Sie N SOT23 BC550B2Fs BC850BW Sie N SOT323 BC550B2Fp BC850B Phi N SOT23 BC550B2Ft BC850B Phi N SOT23 BC550B2Ft BC850BW Phi N SOT323 BC550B2F-BC850BW Phi N SOT323 BC550B2F FMMT2907A Zet N SOT232N2907A2F MMBT2907A Mot N SOT23MPS2907A2F MMBT2907AW Mot N SOT323MPS2907Ap2F PMBT2907A Phi N SOT232N2907Ap2F PXT2907A Phi O SOT892N2907At2F PMBT2907A Phi N SOT232N2907At2F PMBT2907A Phi N SOT3232N2907A2FR BC850BR Phi R SOT23R BC550B2G BC850C ITT N SOT23 BC550C2Gs BC850C Sie N SOT23 BC550C2Gp BC850C Phi N SOT23 BC550C2Gt BC850C Phi N SOT323 BC550C2Gt BC850CW Phi N SOT323 BC550C2G-BC850CW Phi N SOT323BC550C2G FMMT-A56Zet N SOT23MPSA562G MMBTA56Mot N SOT23MPSA56p2G PMBTA56Phi N SOT23MPSA56t2G PMBTA56Phi N SOT23MPSA56t2G PMSTA56Phi N SOT323MPSA562GM MMBTA56Mot N SOT23MPSA562GR BC850CR Phi R SOT23R BC550C2GT SOA56SGS N SOT23MPSA562H ABA-52563Agi DU SOT363 3.5 GHz Broadband Amplifier2H FMMT-A55Zet N SOT23MPSA552H MMBTA55Mot N SOT23MPSA552HT SOA55SGS N SOT23MPSA55t2H PMBTA55Phi N SOT23MPSA55t2H PMSTA55Phi N SOT323MPSA552J MMBT3640Mot N SOT23MPS3640 pnp sw2K BAT754Phi C SOT23Schottky barrier diode2K FMMT4402Zet N SOT232N44022K MMBT8598Mot N -2N4125 pnp 60V2L BAT754A Phi J SOT23Schottky barrier double diodes 2L MMBT5401Mot N SOT232N5401 pnp 150V2L FMMT4403Zet N SOT232N4403p2L PMBT5401Phi N SOT232N5401 pnp 150Vt2L PMBT5401Phi N SOT232N5401 pnp 150Vt2L PMST5401Phi N SOT3232N5401 pnp 150V2M BAT754C Phi B SOT23Schottky barrier double diodes 2M FMMT5087Zet N SOT232N50872M MMBT404Mot N SOT23pnp-chopper 24V 150mA2N BAT754S Phi D SOT23Schottky barrier double diodes 2N MMBT404A Mot N SOT23pnp-chopper 35V 150mA2N0ZXT11N20DF Zet N SOT23npn 20V 2.5A low sat switch2P FMMT2222R Zet R SOT23R2N22222P MMBT5086Mot N SOT232N50862Q MMBT5087Mot N SOT232N50872R HSMS-8102HP Z SOT2310-14GHz schottky mixer pair2T SO4403SGS N SOT232N44032T MMBT4403Mot N SOT232N4403p2T PMBT4403Phi N SOT232N4403p2T PXT4403Phi O SOT892N4403t2T PMBT4403Phi N SOT232N4403t2T PMST4403Phi N SOT3232N44032T HT2Zet N SOT23pnp 80V 100mA2U MMBTA63Mot N SOT23MPSA63 darlingtont2U PMBTA63Phi N SOT23MPSA63 darlington2V MMBTA64Mot N SOT23MPSA64 darlingtonp2V PXTA64Phi O SOT89MPSA64 darlingtont2V PMBTA64Phi H SOT23MPSA64 darlington2V4PZM2.4NB Phi C SOT346 2.4V 300mW Zener2V7PZM2.7NB Phi C SOT346 2.7V 300mW Zener2W FMMT3905Zet N SOT232N39052W MMBT8599Mot N -2N4125 Vce 80V pnp2X SO4401SGS N SOT232N44012X MMBT4401Mot N SOT232N4401p2X PMBT4401Phi N SOT232N4401p2X PxT4401Phi O SOT892N4401t2X PMBT4401Phi N SOT232N4401t2X PMST4401Phi N SOT3232N44012Y4BZV49-C2V4Phi O SOT89 2.4V 1W zener2Y7BZV49-C2V7Phi O SOT89 2.7V 1W zener2Z MMBT6520Mot N SOT232N6520 pnp Vce 350V2Z BAS70-04Zet D SOT23dual series RF schottky 70V 15mA 2Z5BAS70-05Zet B SOT23dual cc RF Schottky 70V 15mACode Device Manufacturer Base Package Leaded Equivalent/Data3BAT60A Sie I SOD32310V 3A sw schottky3BAT62-02W Sie I SCD80-30MUN5330DW1Mot DP SOT363npn/pnp dtr 1k0+1k030U TK61030S Tok-SOT23-5Voltage detector30V PZM30NB1Phi C SOT34630V 300mW zener30Y BZV49-C30Phi O SOT8930V 1W zener301FDV301N Fch M SOT23n-ch 'digital' fet 25V 0.22A302FDV302P Fch M SOT23p-ch 'digital' fet 25V 0.13A303FDV303N Fch M SOT23n-ch 'digital' fet 25V 0.68A304FDV304P Fch M SOT23p-ch 'digital' fet 25V 0.46A31MUN5331DW1Mot DP SOT363npn/pnp dtr 2k2+2k231MMBD1402Nat K SOT23Si diode 200V 100mAp31PDTA143XT Phi N SOT23pnp dtr 4k7+10kt31PDTA143XT Phi N SOT23pnp dtr4k7+10k32MUN5332DW1Mot DP SOT363npn/pnp dtr 4k7+4k732MMBD1403Nat D SOT23dual Si diode 200V 100mA32BAT32Sie CS -18GHz zero-bias schottkyp32PDTC143XT Phi N SOT23pnp dtr 4k7+10kt32PDTC143XT Phi N SOT23pnp dtr 4k7+10ks33MUN5333DW1Mot DP SOT363npn/pnp dtr 4k7+47k33DTA143XE Roh N EMT3pnp dtr 4k7+10k 50V 100mA33DTA143XUA Roh N SC70pnp sw 4k7+10k bias res 50V 100mA 33DTA143XKA Roh N SC59pnp sw 4k7+10k bias res 50V 100mA 33MMBD1404Nat B SOT23dual cc Si diode 200V 100mA33Gali-33MC AZ SOT89DC-4GHz MMIC amp 19dB gain 33U TK61033S Tok-SOT23-5Voltage detector33V PZM33NB1Phi C SOT34633 300mW zener33Y BZV49-C33Phi O SOT8933V 1W zener34MUN5334DW1Mot DP SOT363npn/pnp dtr 22k+47k34MMBD1405Nat A SOT23dual ca Si diode 200V 100mA 331NDS331N Fch M SOT23n-ch mosfet 1.3A 20V331PZM3.3NB1Phi C SOT346 3.3V 300mW zener332PZM3.3NB2Phi C SOT346 3.3V 300mW zener332NDS332N Fch M SOT23p-ch mosfet 0.4A, 1A pk, 20V 335NDS335N Fch M SOT23n-ch mosfet 70 mA, 1.7A pk, 20V 336NDS336N Fch M SOT23p-ch mosfet 0.27A, 1.2A pk, 20V 337NDS337N Fch M SOT23n-ch mosfet 50 mA, 2.5A pk 20V 338NDS338N Fch M SOT23p-ch mosfet 0.13A, 1.6Apk 20V 342SC5007Nec N -npn RF fT 7GHz @3V 7mA340FDV340P Fch M SOT23p-ch mosfet 20V 70 mA35MUN5335DW1Mot DP SOT363npn/pnp dtr 2k2+47k35DTA124XE Roh N EMT3pnp dtr 22k+47k 50V 50mA35DTA124XUA Roh N SC70pnp dtr 22k+47k 50V 50mA35DTA124XKA Roh N SC59pnp dtr 22k+47k 50V 50mA351NDS351N Fch M SOT23n-ch mosfet 1.1A 30V352NDS352N Fch M SOT23p-ch mosfet 0.5A 20V355NDS355N Fch M SOT23n-ch mosfet 0.1A, 1.6A pk 30V 356NDS356N Fch M SOT23p-ch mosfet 0.3A, 1.1A pk 20V 357NDS357N Fch M SOT23n-ch mosfet 2.5Apk 30V358NDS358N Fch M SOT23p-ch mosfet 0.2A, 1.6A pk 30V 358FDN358N Fch M SOT23p-ch mosfet 0.2A 1.6A pk 30V 360FDN360P Fch M SOT23p-ch mosfet 80mA, 2a PK, 30V 361PZM3.6NB1Phi C SOT346 3.6V 300mW Zener362PZM3.3NB2Phi C SOT346 3.6V 300mW Zener36U TK61036S Tok-SOT23-5Voltage detector36V PZM36NB1Phi C SOT34636V 300mW Zener36Y BZV49-C36Phi O SOT8936V 1W zener391PZM3.9NB1Phi C SOT346 3.9V 300mW Zener392PZM3.9NB2Phi C SOT346 3.9V 300mW Zener39V PZM39NB1Phi C SOT34639V 300mW Zener39Y BZV49-C39Phi O SOT8939V 1W zener3A BC856A ITT N SOT23BC556A3A BC856AT Phi N SOT416BC556A3Ap BC856A Phi N SOT23BC556A3At BC856A Phi N SOT23BC556A3As BC856A Sie N SOT23BC556A3At BC856AW Phi N SOT323BC556A3A-BC856AW Phi N SOT323BC556A3A MMBTH24Mot N SOT23VHF mixer npn fT 600MHz 3A0PZM3.0NB2A Phi C SOT346dual 3.0V Zener3A3PZM3.3NB2A Phi C SOT346dual 3.3V Zener3A6PZM3.6NB2A Phi C SOT346dual 3.6V Zener3A9PZM3.9NB2A Phi C SOT346dual 3.9V Zener3AR BC856AR Phi R SOT23R BC556A3B BC856B ITT N SOT23BC556B3B BC856BT Phi N SOT416BC556B3Bp BC856B Phi N SOT23BC556B3Bs BC856B Sie N SOT23BC556B3Bt BC856B Phi N SOT23BC556B3Bt BC856BW Phi N SOT323BC556B3B-BC856BW Phi N SOT323BC556B3B FMMT918Zet N SOT232N9183B MMBT918Mot N SOT232N9183BR BC856BR Phi R SOT23BC556B3C FMMTA20R Zet R SOT23R MPSA203C BC857Sie DO -pnp separate pair gp AF 3D BC856Phi N SOT23BC556 hfe 75 min3Dp BC856Phi N SOT23BC556 hfe 75 min3Dt BC856Phi N SOT23BC556 hfe 75 min3Dt BC856W Phi N SOT323BC556 hfe 75 min3D-BC856W Phi N SOT323BC556 hfe 75 min3D MMBTH81L Mot N SOT23UHF pnp fT 600MHz3D BC856S Sie DO -pnp separate pair gp AF 3E BC857A Phi N SOT23BC557A3E BC857AT Phi N SOT416BC557A3Ep BC857A Phi N SOT23BC557A3Et BC857A Phi N SOT23BC557A3Et BC857A Phi N SOT323BC557A3E-BC857A Phi N SOT323BC557A3E MMBTH10Mot N SOT23MPSH10 fT 650MHz3E FMMT-A42Zet N SOT23MPSA423EM MMBTH10L Mot N SOT23VHF amp 650MHz fT3ER BC857AR Phi R SOT23R BC557A3EZ FMMTH10Zet N SOT23npn fT 650MHz3F BC857B Phi N SOT23BC557B3F BC857BT Phi N SOT416BC557B3Fp BC857B Phi N SOT23BC557B3Fs BC857B Sie N SOT23BC557B3Ft BC857B Phi N SOT23BC557B3Ft BC857BW Phi N SOT323BC557B3Ft BC857BS Phi N SOT363BC557B3F-BC857BW Phi N SOT323BC557B3FR BC857BR Phi R SOT23R BC557B3G BC857C Phi N SOT23BC557C3Gp BC857C Phi N SOT23BC557C3G BC857C Phi N SOT23BC557C3Gs BC857C Sie N SOT23BC557C3Gt BC857C Phi N SOT23BC557C3Gt BC857CW Phi N SOT323BC557C3G-BC857CW Phi N SOT323BC557C3G MMBTH11NS N SOT23-3G MGSF3454X Mot DK TSOP6n-ch enh tmosfet 1.75A 3GR BC857CR Phi R SOT23R BC557CR3Hp BC857C Phi N SOT23BC5573Ht BC857C Phi N SOT23BC5573Ht BC857CW Phi N SOT323BC5573H MMBTH30NS N SOT23-3H-BC857CW Phi N SOT323BC5573J MMBTH69Mot N SOT23pnp UHF fT 2GHz3J BC858A Phi N SOT23BC558A3Js BC858A Sie N SOT23BC558A3JR BC858AR Phi R SOT23R BC558A3Js BCV62A Sie VQ SOT143pnp current mirror hFe 180。

SAF7741_Datasheet_N1F_V5

Signals received from the tuner front-end chips are digitized with integrated IntermediateFrequency Analog-to-Digital Converters (IFADCs). The resulting digital signals are then down-sampled, error-corrected and filtered in the digital domain to be suitable for further radio and audio processing by the DSPs.
SAF7741HV
Dual IF car radio and audio DSP (N1F)
Rev. 05 — 09 May 2008
Байду номын сангаас
Objective data sheet
1. General description
The SAF7741HV is a combined Intermediate-Frequency (IF) car radio and audio Digital Signal Processor (DSP) with several powerful cores integrated onto a single device. It combines analog IF input, digital radio and audio processing, sample-rate converters and digital and analog audio output to enhance listening clarity and noise suppression while reducing multipath channel effect.

MMBF4392LT1G中文资料

MMBF4391LT1,MMBF4392LT1,MMBF4393LT1JFET Switching TransistorsN−ChannelFeatures•Pb−Free Packages are AvailableMAXIMUM RATINGSRatingSymbol Value Unit Drain−Source Voltage V DS 30Vdc Drain−Gate Voltage V DG 30Vdc Gate−Source Voltage V GS 30Vdc Forward Gate CurrentI G(f)50mAdcTHERMAL CHARACTERISTICSCharacteristicSymbol Max Unit Total Device Dissipation FR−5 Board (Note 1) T A = 25°C Derate above 25°C PD2251.8mW mW/°C Thermal Resistance, Junction−to−Ambient R q JA 556°C/W Junction and Storage Temperature RangeT J , Tstg−55 to +150°CMaximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.1.FR−5 = 1.0 0.75 0.062 in.Preferred devices are recommended choices for future use and best overall value.See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATIONELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICS Gate−Source Breakdown Voltage (I G = 1.0 m Adc, V DS = 0)V (BR)GSS 30−VdcGate Reverse Current(V GS = 15 Vdc, V DS = 0, T A = 25°C)(V GS = 15 Vdc, V DS = 0, T A = 100°C)I GSS−− 1.00.20nAdc m Adc Gate−Source Cutoff Voltage(V DS = 15 Vdc, I D = 10 nAdc)MMBF4391LT1MMBF4392LT1MMBF4393LT1V GS(off)−4.0−2.0−0.5−10−5.0−3.0VdcOff−State Drain Current(V DS = 15 Vdc, V GS = −12 Vdc)(V DS = 15 Vdc, V GS = −12 Vdc, T A = 100°C)I D(off)−−1.01.0nAdc m AdcON CHARACTERISTICS Zero−Gate−Voltage Drain Current (V DS = 15 Vdc, V GS = 0)MMBF4391LT1MMBF4392LT1MMBF4393LT1I DSS50255.01507530mAdcDrain−Source On−Voltage (I D = 12 mAdc, V GS = 0)MMBF4391LT1(I D = 6.0 mAdc, V GS = 0)MMBF4392LT1(I D = 3.0 mAdc, V GS = 0)MMBF4393LT1V DS(on)−−−0.40.40.4VdcStatic Drain−Source On−Resistance (I D = 1.0 mAdc, V GS = 0)MMBF4391LT1MMBF4392LT1MMBF4393LT1r DS(on)−−−3060100WSMALL−SIGNAL CHARACTERISTICS Input Capacitance(V DS = 15 Vdc, V GS = 0, f = 1.0 MHz)C iss −14pF Reverse Transfer Capacitance(V DS = 0, V GS = 12 Vdc, f = 1.0 MHz)C rss−3.5pFORDERING INFORMATIONDeviceMarking Package Shipping †MMBF4391LT16J SOT−233000 / Tape & ReelMMBF4391LT1G 6J SOT−23(Pb−Free)MMBF4392LT16K SOT−23MMBF4392LT1G 6K SOT−23(Pb−Free)MMBF4393LT16G SOT−23MMBF4393LT1G6GSOT−23(Pb−Free)†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.TYPICAL CHARACTERISTICS, T U R N −O N D E L A Y T I M E (n s )d (o n )t I D , DRAIN CURRENT (mA), T U R N −O F F D E L A Y T I M E (n s )d (o f f )t Figure 3. Turn−Off Delay TimeI D , DRAIN CURRENT (mA)Figure 4. Fall Time10005.02.020101.0501002005001000Figure 5. Switching Time Test CircuitFigure 6. Typical Forward Transfer AdmittanceFigure 7. Typical CapacitanceI D , DRAIN CURRENT (mA)2.05.03.07.01020, F O R W A R D T R A N S F E R A D M I T T A N C E (m m h o s )f s V 102.0153.05.07.0V R , REVERSE VOLTAGE (VOLTS)C , C A P A C I T A N C E (p F )OUTPUTr t f ≤ 0.5 nsPULSE WIDTH = 2.0 m s DUTY CYCLE ≤ 2.0%R D’ = R D (R T + 50)R D + R T + 50Figure 8. Effect of Gate−Source Voltageon Drain−Source Resistance V GS , GATE−SOURCE VOLTAGE (VOLTS)r Figure 9. Effect of Temperature on Drain−SourceOn−State Resistance, D R A I N −S O U R C E O N −S T A T E D S (o n )R E S I S T A N C E (N O R M A L I Z E D )T channel , CHANNEL TEMPERATURE (°C)1.51.0r , D R A I N −S O U R C E O N −S T A T E D S (o n )R E S I S T A N C E (O H M S )NOTE 1The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply V oltage (−V GG ). The Drain−Source V oltage (V DS ) is slightly lower than Drain Supply V oltage (V DD ) due to the voltage divider. Thus Reverse Transfer Capacitance (C rss ) of Gate−Drain Capacitance (C gd ) is charged to V GG + V DS .During the turn−on interval, Gate−Source Capacitance (C gs )discharges through the series combination of R Gen and R K . C gd must discharge to V DS(on) through R G and R K in series with the parallel combination of effective load impedance (R’D ) and Drain−Source Resistance (r DS ). During the turn−off, this charge flow is reversed.Predicting turn−on time is somewhat difficult as the channel resistance r DS is a function of the gate−source voltage. While C gs discharges, V GS approaches zero and r DS decreases. Since C gd discharges through r DS , turn−on time is non−linear. During turn−off,the situation is reversed with r DS increasing as C gd charges.The above switching curves show two impedance conditions; 1)R K is equal to R D’ which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) R K = 0 (low impedance) the driving source impedance is that of the generator.Figure 10. Effect of I DSS on Drain−Source Resistance and Gate−Source VoltageI DSS , ZERO−GATE VOLTAGE DRAIN CURRENT (mA), D R A I N −S O U R C E O N −S T A T E D S (o n )r 2010304050304050607020R E S I S T A N C E (O H M S )1001.02.03.04.05.0, G A T E −S O U R C E V O L T A G E G S V (V O L T S )6.07.08.09.010706080901008090100110120130140150NOTE 2The Zero−Gate−V oltage Drain Current (I DSS ) is the principle determinant of other J−FET characteristics.Figure 10 shows the relationship of Gate−Source Off V oltage (V GS(off)) and Drain−Source On Resistance (r DS(on)) to I DSS . Most of the devices will be within ±10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknownr DS(on) and V GS range for an MMBF4392 The electrical characteristics table indicates that an MMBF4392 has an I DSS range of 25 to 75 mA. Figure 10 shows r DS(on) = 52 W for I DSS = 25 mA and 30 W for I DSS = 75 mA. The corresponding V GS values are 2.2 V and 4.8 V .PACKAGE DIMENSIONSSOT−23 (TO−236)CASE 318−08ISSUE ANNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEADTHICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.VIEW CDIM A MIN NOM MAX MIN MILLIMETERS0.89 1.00 1.110.035INCHESA10.010.060.100.001b 0.370.440.500.015c 0.090.130.180.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.100.200.300.0040.0400.0440.0020.0040.0180.0200.0050.0070.1140.1200.0510.0550.0750.0810.0080.012NOM MAX L1STYLE 10:PIN 1.DRAIN2.SOURCE3.GATE2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.029SOLDERING FOOTPRINT**For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

TI 系列集中料号表

最小包装 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 2500 2500 3000 2500 3000 3000 3000 3000 2000 3000 3000 3000 3000
封装 SOT23 SOT-23-5 SC70-5 SOT23-5 SOT-23-5 SC-70-5 SOT-23-5 SOT353 SC705 SOT-23-5 SC-70-5 SOT23-5 SC705 SOT-23-5 SC70-5 SC-70-5 SC70-5 SOT-23-6 SC706 0MSOP 8-MSOP SOT-23-5 8-SOIC 10-SON SOT-23-6 20-WQFN 6SON 14-HTSSOP 16-WQFN 8-DSBGA 10SON 6SON
9DSBGA 9DSBGA 16DSBGA 16DSBGA 12DSBGA 16DSBGA 9DSBGA 9DSBGA 12DSBGA 8MSOP 16BGA 14TSSOP 16DSBGA 8BGA 8MSOP SC-70-5 SC70-6 8-SOIC 40-VFQFN 8-SOIC 6-SON 28 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
料号(Q272261417) LMV321IDBVR LMV331IDBVR LMV331IDCKR SN74AHC1G04DBVR SN74AHC1G08DBVR SN74AHC1G08DCKR SN74LVC1G04DBVR SN74LVC1G04DCKR SN74LVC1G07DCKR SN74LVC1G08DBVR SN74LVC1G08DCKR SN74LVC1G125DBVR SN74LVC1G125DCKR SN74LVC1G14DBVR SN74LVC1G14DCKR SN74LVC1G32DCKR SN74LVC1G66DCKR SN74LVC2G04DBVR SN74LVC2G07DCKR TPS51100DGQR TPS2001CDGKR TPS2051BDBVR TPS2052BDR TPS61020DRCR TPS3106K33DBVR TPS51216RUKR TPS61160DRVR TPS54226PWPR TPS2543RTER TPS61060YZFR TPS61087DRCR TPS61165DRVR

MMBF4392中文资料

tf
Fall Time
ton
Turn-On Time
toff
Turn-Off Time
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
Max
*MMBF4391 225 1.8 556
Units
mW mW/°C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
©1997 Fairchild Semiconductor Corporation
元器件交易网
Ciss Crss
Input Capacitance Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
tr Rise Time I D(on) = 12 mA I D(on) = 6.0 mA I D(on) = 3.0 mA VGS(off) = 12 V VGS(off) = 6.0 V VGS(off) = 3.0 V I D(on) = 12 mA I D(on) = 6.0 mA I D(on) = 3.0 mA VGS(off) = 12 V VGS(off) = 6.0 V VGS(off) = 3.0 V PN4391 PN4392 PN4393 PN4391 PN4392 PN4393 PN4391 PN4392 PN4393 PN4391 PN4392 PN4393 5.0 5.0 5.0 15 20 30 15 15 15 20 35 50 ns ns ns ns ns ns ns ns ns ns ns ns
Absolute Maximum Ratings*

MMBF4416A中文资料

MMBF4416AAbsolute Maximum Ratings * T A =25°C unless otherwise noted* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1)These ratings are based on a maximum junction temperature of 150 degrees C.2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Electrical Characteristics T A =25°C unless otherwise noted* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%Thermal Characteristics T A =25°C unless otherwise noted* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.Symbol ParameterValue Units V DG Drain-Gate Voltage 35V V GS Gate-Source Voltage -35V I GF Forward Gate Current10mA T J , T STGOperating and Storage Junction Temperature Range- 55 ~ 150°CSymbolParameterTest ConditionMin.Typ.Max.Units Off CharacteristicsV (BR)GSS Gate-Source Breakdown Voltage V DS = 0, I G = 1.0µA -35V I GSS Gate Reverse Current V GS = -20V, V DS = 0-100pA V GS (off)Gate Source Cut-off Voltage V DS = 15V, I D = 1.0nA -2.5-6.0V V GSGate Source VoltageV DS = 15V, I D = 500µA -1-5.5V On Characteristics I DSS Zero-Gate Voltage Drain Current V GS = 15V, V GS = 0515µA V GS (f)Gate-Source Forward VoltageV DS = 0, I G = 1.0mA1V Small Signal Characteristics g fs Forward Transfer Conductance *V DS = 15V, V GS = 0, f = 1.0kHz 45007500µmhos g os Output Conductance *V DS = 15V, V GS = 0, f = 1.0kHz 50µmhosC issInput CapacitanceV DS = 15V, V GS = 0, f = 1.0MHz 4.0P F CrssReverse Transfer Capacitance V DS = 15V, V GS = 0, f = 1.0MHz 0.8P F C oss Output Capacitance V DS = 15V, V GS = 0, f = 1.0MHz 2.0P FNFNoise FigureV DS = 15V, V GS = 0, I D = 5mA, R g = 1k Ω, f = 400MHz4.0dBSymbol ParameterMax.Units P D Total Device DissipationDerate above 25°C2251.8mW mW/°C R θJAThermal Resistance, Junction to Ambient556°C/WMMBF4416AN-Channel RF Amplifier•This device is designed for RF amplifiers.•Sourced from process 50.SOT-23DSGMark: 6BGMMBF4416ATRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT™FACT Quiet series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™。

MMBF4393中文资料

Max
*MMBF4391 225 1.8 556
Units
mW mW/°C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
©1997 Fairchild Semiconductor Corporation
元器件交易网
VDS(on)
Drain-Source On Voltage
rDS(on)
Drain-Source On Resistance
I D = 12 mA, VGS = 0 I D = 6.0 mA, VGS = 0 I D = 3.0 mA, VGS = 0 I D = 1.0 mA, VGS = 0
SMALL-SIGNAL CHARACTERISTICS
G
D G SD
TO-92
SOT-23
Mark: 6J / 6K / 6G
S
N-Channel Switch
This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 51. See J111 for characteristics.
tf
Fall Time
ton
Turn-On Time
toff
Turn-Off Time
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
- 4.0 - 2.0 - 0.5

PLM20K44产品说明书

PWM Peak Controler 7500W type D rev01c Final Assembly 01
2012-12-21
U516
x
U510
x
U512, , U514, U505
x
U506
x
U508, U509
x
U507
x
U900
x
U902
x
D3, D304, D307, D504
x
D303, D305
27V.25W5%SOT-23 COAEXPFC52-A01 COAEXPFC70-A01 COAEXPFC70-A03
COCIPI4X2-A01
COSP05FB 6R8.33W5%1206 2R7.33W5%1206 10K.125W1%0805
22n630VMKP7.5 T50WFETD29 T16A400-5x20AL T3A15400-5x20
Q3, Q7, Q307, Q308, Q508 Q4, Q5, Q8, Q9, Q400, Q401, Q403, Q507, Q404, Q12
Q408
Q11 Q10, Q500 Q509
Q505 U300, U401
U407, U408, U504
Ic Operational Amplifier Lm833 SOIC Narrow body Ic dual gate driver FAN3224CMX SOIC-8 Pulse Width Modulator PFC type 1 rev.03a Final Assembly 01
Ic Comparator Lm339D
Ic Digital Isolator SI8441-C Ic Inverting Scmitt trigger 74AHC1G14 SOT353-1 Diode Signal Bas21 SOT-23 Diode Power 1n4006 Diode Zener 6V2 .225W 2% SOT-23

GRR实例

0 0.0000 0.0020 0.0030 0.0010 0.0010 0.0010 0.0020 0.0000 0.010
第2次 0.0000 0.0000 0.0010 0.0020 0.0040 0.0010 0.0010 0.0010 0.0020 0.0000 0.012
=(AV2+EV2)1/2
R&R% =
R&R/T =
審核:
經辦: 田中莉
005全距第1次第2次第3次123第1次第2次第3次全距000000000000000000000020000100001000010001000010000000000000000000000100001000010000000010000200002000020000200001000000001000010000100000000100002000020000000010002000020000200000000100001000020000100000000100001000010000000001000300004000040000100020000200002000000002000000001000010000100000000200000000010000200010000000000000020000200001000100001000010000000010000100001000000000000010001000010000200001000200002000020000000030000200002000010000100001000200002000020000000000000100001000010001000010000000000000000000000100001000000000100000000000001000000000100001001000120013000300003001200110013000800090011001200090000800009xc00011r000067uclr00017xa00012xb00012量測系統很好

MPF4392中文资料

Drain–Source “ON” Resistance (VGS = 0, ID = 0, f = 1.0 kHz) Input Capacitance (VGS = 15 Vdc, VDS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VGS = 12 Vdc, VDS = 0, f = 1.0 MHz) (VDS = 15 Vdc, ID = 10 mAdc, f = 1.0 MHz) rds(on) MPF4392 MPF4393 Ciss Crss — — 2.5 3.2 3.5 — — — — — — 6.0 60 100 10 pF pF Ω
Figure 1. Turn–On Delay Time
1000 t d(off) , TURN–OFF DELAY TIME (ns) 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD′ TJ = 25°C MPF4392 VGS(off) = 7.0 V MPF4393 = 5.0 V 1000 500 200 t f , FALL TIME (ns) 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0
Figure 4. Fall Time Motorola Small–Signal Transistors, FETs and Diodes Device Data
元器件交易网
MPF4392 MPF4393
–VDD RD NOTE 1 The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (–VGG). The Drain–Source Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) or Gate–Drain Capacitance (Cgd) is charged to VGG + VDS. During the turn–on interval, Gate–Source Capacitance (C gs) discharges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (R′D) and Drain–Source Resistance (rds). During the turn–off, this charge flow is reversed. Predicting turn–on time is somewhat difficult as the channel resistance rds is a function of the gate–source voltage. While Cgs discharges, VGS approaches zero and rds decreases. Since Cgd discharges through rds, turn–on time is non–linear. During turn–off, the situation is reversed with rds increasing as Cgd charges. The above switching curves show two impedance conditions: 1) RK is equal to RD′ which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator.

PN4392中文资料

Application information
Where application information is given, it is advisory and does not form part of the speciﬁcation.
SOT54
c
E d
1 2
D
3
b1
A
L
L1
b
e1 e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
b
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2 5.0
0.48 0.66 0.45 0.40 0.56 0.40
4.8 4.4
1.7 1.4
1.0
nA
1.0 nA
200
nA
200
nA
200 nA
50
25
150
100
5 mA 60 mA
−V(BR)GSS −VGS off
min.
min. max.
40
40
40 V
4.0
2.0
0.5 V
10
5.0
3.0 V
RDS on
VDS on VDS on VDS on
max.
max. max. max.
This data sheet contains target or goal speciﬁcations for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains ﬁnal product speciﬁcations. The data in this speciﬁcation is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

CS4392-KZZ资料

The CS4392 accepts PCM data at sample rates from 4 kHz to 192 kHz, DSD audio data, has selectable digital filters, and consumes very little power. These features are ideal for DVD, SACD players, A/V receivers, CD and set-top box systems. The CS4392 is pin and register compatible with the CS4391, making easy performance upgrades possible.
ORDERING INFORMATION
CS4392-KS
-10 to 70 °C 20-pin SOIC
CS4392-KZ
-10 to 70 °C 20-pinTSSOP
CS4392-KZZ, Lead Free -10 to 70 °C 20-pinTSSOP
CDB4392
Evaluation Board
– Fast and Slow roll-off
z Volume Control with Soft Ramp
– 1 dB Step Size – Zero Crossing Click-Free Transitions
z Direct Interface with 5 V to 1.8 V Logic z ATAPI Mixing Functions z Pin Compatible with the CS4391
3.1 Recommended Power-up Sequence for Hardware Mode ................................ 9 3.2 Recommended Power-up Sequence and Access to

音响系统的音量控制芯片

音响系统的音量、音效控制电路V olume and Sound effect control Circuits for Audio System 产品型号功能描述封装形式兼容型号TC9153 两声道按键式电子音量控制电路DIP-16 SC9153 BT2253 两声道按键式电子音量控制电路DIP-16 PT2253 BT609D 双通道带自动增益控制的语音动态压缩/扩展电路DIP-16 SOP-16 BT608 保护扬声器所设计的音频限幅电路SSOP-10 SC9153 电子音量控制电路DIP-16 ET9235 电子音量控制电路DIP-16 SOP-16 TC9235 SC9235 BT2322 六声道音频处理器(3D效果) DIP-28 SOP-28 PT2322 TC9149A/AL/AHN 与TC9148B配套使用的红外遥控接收电路DIP-16 SDIP-24 SC9149A PT2249A BT2323 6声道音响输入选择器DIP-28 SOP-28 PT2323 BT2399 回音/环绕音效处理电路DIP-16 PT2399 BT2313 带音调和音量处理的数控四声道音频处理器SOP-28 PT2313 BT2315 带音调和音量处理的数控两声道音频处理器DIP-20 SOP-20 PT2315 BT2314 带音调和音量处理的数控四声道输入音频处理器SOP-28 PT2314 TDA1028 两声道旋扭压控电子音量控制电路DIP-16 SOP-16 TDA8199 BT3758 六声道旋扭压控电子音量控制电路DIP-18 BT2258 6通道数位电子音量控制电路DIP-20 SOP-20 PT2258 CS3758 SC5358 M62429 两声道数位电子音量控制电路DIP-8 SOP-8 M62429，PT2257 BT2327 六声道直流电压控制带自动增益调节电子音量控制电路DIP-18 SOP-18 PT2327 BT2358 3通道直流电压控制带自动增益调节，可主音量调节，低通道输出，无需MCU电子音量控制电路DIP-24 新BT2256 2声道电子音量控制电路DIP-16 SOP-16(宽) SOP-16(窄) PT2256 CS8003A 六声道按键控制独立输入、输出，无需MCU可遥控电子音量控制电路DIP24 BT8211 两声道16BIT 数位/类比转换器DIP-8 SOP-8 PT8211 BT24C02 2K EEPROM DIP-8 SOP-8 AT24C02 音频功放、耳机功放电路及收音，电视电路快速返回Audio Power Amplifier, Headphone Driver 产品型号功能描述封装形式兼容型号BT1308L 耳机功率放大驱动电路DIP-8 SOP-8 TDA1308 BT4800 BT7000 立体耳机驱动电路DIP-10 SOP-10 KA7000 BT4803 耳机功率放大驱动电路DIP-8 SOP-8 LM4800 AP1308 PT2308 BT4533 立体耳机驱动电路DIP-10 LA4533 BT8001 带有关闭模式的675mw的音频功率放大器DIP-8 SOP-8 TDA7050T 立体耳机功率放大驱动电路SOP-8 TDA7050T(PHILIPS) BT7368 720mW 单声道音频功放电路SIP-9 TA7368P AAI4002 带数字音量调节和关断控制的AB类2*2W 功放TSSOP-28 LM4838 TEA2025M 2*1W音频功放电路SOP-20 TEA2025B LM4871 2W带关断模式的AB类低功耗功放SOP-8 NS LM4871 LM4862 0.675带关断模式的AB类低功耗功放SOP-8 NS LM4862使用说明：1，PT2313/PT2314使用外围电路全部按上图严格连接，包括电路参数。

MMBF4393LT1G中文资料

MMBF4391LT1,MMBF4392LT1,MMBF4393LT1JFET Switching Transistors N−ChannelFeatures•Pb−Free Packages are AvailableMAXIMUM RATINGSTHERMAL CHARACTERISTICSMaximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.1.FR−5 = 1.0 0.75 0.062 in.SOT−23CASE 318STYLE 10MARKINGDIAGRAMxx M1232 SOURCE3GATE1 DRAINxx= Specific Device CodeM= Date CodeSee detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATIONSee specific marking information in the device marking section on page 2 of this data sheet.DEVICE MARKING INFORMATIONELECTRICAL CHARACTERISTICS (T= 25°C unless otherwise noted)OFF CHARACTERISTICSON CHARACTERISTICSSMALL−SIGNAL CHARACTERISTICS ORDERING INFORMATIONSpecifications Brochure, BRD8011/D.TYPICAL CHARACTERISTICS, T U R N −O N D E L A Y T I M E (n s )d (o n )t I D , DRAIN CURRENT (mA), T U R N −O F F D E L A Y T I M E (n s )d (o f f )t Figure 3. Turn−Off Delay TimeI D , DRAIN CURRENT (mA)Figure 4. Fall Time5.02.020101.0501002005001000Figure 5. Switching Time Test CircuitFigure 6. Typical Forward Transfer AdmittanceFigure 7. Typical CapacitanceI D , DRAIN CURRENT (mA)2.05.03.07.01020, F O R W A R D T R A N S F E R A D M I T T A N C E (m m h o s )f s V 102.0153.05.07.0V R , REVERSE VOLTAGE (VOLTS)C , C A P A C I T A N C E (p F )OUTPUTr t f ≤ 0.5 nsPULSE WIDTH = 2.0 m s DUTY CYCLE ≤ 2.0%R D’ = R D (R T + 50)R D + R T + 50Figure 8. Effect of Gate−Source Voltageon Drain−Source Resistance V GS , GATE−SOURCE VOLTAGE (VOLTS)r Figure 9. Effect of Temperature on Drain−SourceOn−State Resistance, D R A I N −S O U R C E O N −S T A T E D S (o n )R E S I S T A N C E (N O R M A L I Z E D )T channel , CHANNEL TEMPERATURE (°C)1.51.0r , D R A I N −S O U R C E O N −S T A T E D S (o n )R E S I S T A N C E (O H M S )NOTE 1The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply V oltage (−V GG ). The Drain−Source V oltage (V DS ) is slightly lower than Drain Supply V oltage (V DD ) due to the voltage divider. Thus Reverse Transfer Capacitance (C rss ) of Gate−Drain Capacitance (C gd ) is charged to V GG + V DS .During the turn−on interval, Gate−Source Capacitance (C gs )discharges through the series combination of R Gen and R K . C gd must discharge to V DS(on) through R G and R K in series with the parallel combination of effective load impedance (R’D ) and Drain−Source Resistance (r DS ). During the turn−off, this charge flow is reversed.Predicting turn−on time is somewhat difficult as the channel resistance r DS is a function of the gate−source voltage. While C gs discharges, V GS approaches zero and r DS decreases. Since C gd discharges through r DS , turn−on time is non−linear. During turn−off, the situation is reversed with r DS increasing as C gd charges. The above switching curves show two impedance conditions;1) R K is equal to R D’ which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) R K = 0 (low impedance) the driving source impedance is that of the generator.Figure 10. Effect of I DSS on Drain−Source Resistance and Gate−Source VoltageI DSS , ZERO−GATE VOLTAGE DRAIN CURRENT (mA), D R A I N −S O U R C E O N −S T A T E D S (o n )r 2010304050304050607020R E S I S T A N C E (O H M S )1001.02.03.04.05.0, G A T E −S O U R C E V O L T A G E G S V (V O L T S )6.07.08.09.010706080901008090100110120130140150NOTE 2The Zero−Gate−V oltage Drain Current (I DSS ) is the principle determinant of other J−FET characteristics.Figure 10 shows the relationship of Gate−Source Off V oltage (V GS(off)) and Drain−Source On Resistance (r DS(on)) to I DSS . Most of the devices will be within ±10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknownr DS(on) and V GS range for an MMBF4392 The electrical characteristics table indicates that an MMBF4392 has an I DSS range of 25 to 75 mA. Figure 10 shows r DS(on) = 52 Ohms for I DSS = 25 mA and 30Ohms for I DSS = 75 mA. The corresponding V GS values are 2.2 V and 4.8 V .PACKAGE DIMENSIONSSOT−23 (TO−236)CASE 318−08ISSUE AJ*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓSCALE 10:1STYLE 10:PIN 1.DRAIN2.CSOURCE3.GATEON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。