MC74VHC1G126中文资料

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MC74VHC1G126
Noninverting 3−State Buffer
The MC74VHC1G126 is an advanced high speed CMOS noninverting 3−state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffered 3−state output which provides high noise immunity and stable output.
The MC74VHC1G126 input structure provides protection when voltages up to 7.0 V are applied, regardless of the supply voltage. This allows the MC74VHC1G126 to be used to interface 5.0 V circuits to 3.0 V circuits.
Leakage Current
VIN = 5.5 V or GND 0 to 5.5
±0.1
±1.0
±1.0 mA
ICC
Maximum Quiescent
VIN = VCC or GND
5.5
1.0
20
40
mA
Supply Current
AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns
PIN ASSIGNMENT
1
OE
2
IN A
3
GND
4
OUT Y
5
VCC
A Input
L H X
FUNCTION TABLE
OE Input
Y Output
H
L
H
H
L
Z
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
VCC VIN VOUT TA tr , tf
DC Supply Voltage DC Input Voltage DC Output Voltage Operating Temperature Range Input Rise and Fall Time
VCC = 0 High or Low State
VOUT < GND; VOUT > VCC
SC−88A, TSOP−5 SC−88A, TSOP−5
Human Body Model (Note 1) Machine Model (Note 2)
Charged Device Model (Note 3)
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
2
元器件交易网
MC74VHC1G126
DC ELECTRICAL CHARACTERISTICS
Features
• High Speed: tPD = 3.5 ns (Typ) at VCC = 5.0 V • Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C • Power Down Protection Provided on Inputs • Balanced Propagation Delays • Pin and Function Compatible with Other Standard Logic Families • Chip Complexity: FETs = 58; Equivalent Gates = 15 • Pb−Free Packages are Available
Symbol
Parameter
Test Conditions
VCC
TA = 25°C
TA ≤ 85°C −55 ≤ TA ≤ 125°C
(V) Min Typ Max Min Max Min
Max Unit
VIH
Minimum High−Level
Input Voltage
2.0 1.5 3.0 2.1 4.5 3.15 5.5 3.85
OE 1 IN A 2 GND 3
5 VCC 4 OUT Y
Figure 1. Pinout (Top View)
OE
EN
IN A
OUT Y
Figure 2. Logic Symbol
© Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev. 13
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TA = 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Test Conditions
Min Typ Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLH, ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHL
M
= Date Cion
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary depending upon manufacturing location.

MARKING DIAGRAMS
5
1 SC−88A/SOT−353/SC−70
DF SUFFIX CASE 419A
M
5
W2 M G G
1
5
1 TSOP−5/SOT−23/SC−59
DT SUFFIX CASE 483
5
W2 AYW G G
1
W2 = Device Code
2.0 1.9 2.0
1.9
1.9
V
Output Voltage
IOH = −50 mA
3.0 2.9 3.0
2.9
2.9
VIN = VIH or VIL
4.5 4.4 4.5
4.4
4.4
VIN = VIH or VIL IOH = −4 mA IOH = −8 mA
3.0 2.58 4.5 3.94
−0.5 to +7.0 −0.5 to +7.0 −0.5 to 7.0 −0.5 to VCC + 0.5
−20 +20 +25 +50 200 333 260 +150 −65 to +150 > 2000 > 200 N/A
V V V
mA mA mA mA mW °C/W °C °C °C V
VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V
Min
Max
Unit
2.0
5.5
V
0.0
5.5
V
0.0
VCC
V
−55
+125
°C
0
100
ns/V
0
20
Device Junction Temperature versus Time to 0.1% Bond Failures
ILatchup Latchup Performance
Above VCC and Below GND at 125°C (Note 4)
±500
mA
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Tested to EIA/JESD22−A114−A 2. Tested to EIA/JESD22−A115−A 3. Tested to JESD22−C101−A 4. Tested to EIA/JESD78