AS1801-BTDT;中文规格书,Datasheet资料

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6N139S(TA),6N138S1(TA),6N138S1(TA)-V,6N138S1(TB),6N138S1(TB)-V,6N138S(TA), 规格书,Datasheet 资料

8 PIN DIP LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON PHOTOCOUPLER6N138 6N139Features:• High current transfer ratio –2000% typical• Hig h isolation voltage between input and output (Viso=5000 Vrms )•Guaranteed performance from 0°C to 70°C • Pb free and RoHS compliant. • UL approved (No. 214129) •VDE approved (No. 132249) • SEMKO approved • NEMKO approved • DEMKO approved • FIMKO approved• CSA approved (No. 2037145)DescriptionThe 6N138 and 6N139 devices each consists of an infrared emitting diode, optically coupled to a high gain split Darlington photo detector. They provide extremely high current transfer ratio between input and output, with access to a base terminal to adjust the gain bandwidth.SchematicThese devices are packaged in an 8-pin DIP package and available in wide-lead spacing and SMD options.Applications• Digital logic ground isolation • RS-232C line receiver• Low input current line receiver • Microprocessor bus isolation • Current loop receiverPin Configuration 1. No Connection 2. Anode 3. Cathode4. No Connection5. Gnd6. Vout7. V B8. Vcc8 PIN DIP LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON PHOTOCOUPLER6N138 6N139Absolute Maximum Ratings (T a =25°C unless otherwise specified)Parameter Symbol Rating UnitForward currentI F 20 mA Peak forward current(50% duty, 1ms P.W)I FP 40 mA Peak transient current (≤1μs P.W, 300pps) I Ftrans 1 A Reverse voltage V R 5 V InputPower dissipation P IN 45 mW Power dissipation P O 100 mW Output currentI O 60 mA Emitter-Base Reverse VoltageVER 0.5 V 6N138 -0.5 to 7 V Output voltage6N139V O-0.5 to 18 V 6N138 -0.5 to 7 V OutputSupply voltage6N139V CC -0.5 to 18VIsolation voltage *1 V ISO 5000 V rms Operating temperature T OPR -40 ~ +85 °C Storage temperature T STG -55 ~ +125°CSoldering temperature *2 T SOL260 °CNotes*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2, 3, 4 are shorted together, and pins 5, 6, 7, 8 are shorted together. *2 For 10 seconds.8 PIN DIP LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON PHOTOCOUPLER6N138 6N139Electrical Characteristics (T a =0 to 70°C unless specified otherwise)InputParameter Symbol Min. Typ.* Max. Unit ConditionForward voltage V F - 1.3 1.7 V I F = 1.6mAReverse VoltageV R 5.0 - - V I R = 10μA, TA=25°C Temperature coefficient offorward voltageΔV F /ΔT A- -1.8 - mV/°CI F =1.6mAOutputParameter Symbol Min. Typ.* Max. Unit Condition6N139 - 0.01 100Logic HighOutput Current 6N138 I OH- - 250 µAI F =0mA, V O =V CC =18VLogic Low Supply Current 6N1386N139 I CCL - 0.6 1.5 mA I F =1.6mA, V O =Open,V CC =18VLogic High Supply Current6N138 6N139I CCH- 0.05 10 µAI F =0mA, V O =Open, V CC =18VTransfer Characteristics (T a =0 to 70°C unless specified otherwise, Vcc=4.5V)Parameter Symbol Min. Typ.* Max. Unit Condition400 2500 -I F = 0.5mA, V O = 0.4V,V CC =4.5V6N139500 2000 - Current Transfer Ratio6N138CTR300 2000 - %I F = 1.6mA, V O = 0.4V, V CC =4.5V- 0.05 0.4 I F = 0.5mA, I O = 2mA, V CC =4.5V- 0.09 0.4I F = 1.6mA, I O = 8mA, V CC =4.5V- 0.12 0.4 I F = 5mA, I O = 15mA, V CC =4.5V6N139- 0.17 0.4I F = 12mA, I O = 24mA, V CC =4.5VLogic LowOutput Voltage6N138V OL- 0.06 0.4V I F = 1.6mA, I O = 4.8mA, V CC =4.5V* Typical values at T a = 25°C8 PIN DIP LOW INPUT CURRENT HIGH GAINSPLIT DARLINGTON PHOTOCOUPLER 6N138 6N139Switching Characteristics (T a=0 to 70°C unless specified otherwise, Vcc=5V)Parameter SymbolMin.Typ.*Max.Unit Condition- 5 25 I F= 0.5mA , R L=4.7kΩ, T A=25°C- - 30 IF= 0.5mA , R L=4.7kΩ- 0.2 1 I F= 12mA , R L=270Ω, T A=25°C6N139- - 2 IF= 12mA , R L=270Ω- 1.4 10 I F= 1.6mA , R L=2.2kΩ, T A=25°CPropagationDelay Time toLogic Low(Fig. 13)6N138 TPHL- - 15µsI F= 1.6mA , R L=2.2kΩ- 16 60I F= 0.5mA , R L=4.7kΩ,T A=25°C- - 90 I F= 0.5mA , R L=4.7kΩ- 1.7 7I F= 12mA , R L=270Ω,T A=25°C6N139- - 10 I F= 12mA , R L=270Ω- 8 35 I F= 1.6mA , R L=2.2kΩ, T A=25°CPropagationDelay Time toLogic High(Fig. 13)6N138TPLH- - 50 µsI F= 1.6mA , R L=2.2kΩCommon Mode TransientImmunity at Logic High (Fig. 14) *3CM H1,000 - - V/µsI F= 0mA , V CM=10Vp-p,R L=2.2KΩ, T A=25°CCommon Mode TransientImmunity at Logic Low (Fig. 14) *3CM L1,000 - - V/µsI F= 1.6mA , V CM=10Vp-p,R L=2.2KΩ, T A=25°C* Typical values at T a = 25°C8 PIN DIP LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON PHOTOCOUPLER6N138 6N139Typical Performance Curves8 PIN DIP LOW INPUT CURRENT HIGH GAIN6N138 6N139SPLIT DARLINGTON PHOTOCOUPLER8 PIN DIP LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON PHOTOCOUPLER6N138 6N139Fig. 13 Switching Time Test Circuit and WaveformFig. 14 Common Mode Transient Immunity Test Circuit and WaveformNote:*3 Common mode transient immunity in logic high level is the maximum tolerable (positive) dVcm/dt on the leading edge of the common mode pulse signal VCM, to assure that the output will remain in a logic high state (i.e., VO > 2.0V).Common mode transient immunity in logic low level is the maximum tolerable (negative) dVcm/dt on the trailing edge of the common mode pulse signal, VCM, to assure that the output will remain in a logic low state (i.e., VO < 0.8V).I FV O 5Vt PLHt PHL+5VVo CM H : Switch at B (IF=0mA)CM L : Switch at A (IF=1.6mA)A V8 PIN DIP LOW INPUT CURRENT HIGH GAINSPLIT DARLINGTON PHOTOCOUPLER 6N138 6N139Order InformationPart Number6N13XY(Z)-VNoteX = Part No. (X = 8 or 9)Y = Lead form option (S, S1, M or none)Z = Tape and reel option (TA, TB or none).V = VDE (optional)quantity Option Description PackingNone Standard DIP-8 45 units per tubeM Wide lead bend (0.4 inch spacing) 45 units per tubeS (TA) Surface mount lead form + TA tape & reel option 1000 units per reelS (TB) Surface mount lead form + TB tape & reel option 1000 units per reelS1 (TA) Surface mount lead form (low profile) + TA tape & reel option 1000 units per reelS1 (TB) Surface mount lead form (low profile) + TB tape & reel option 1000 units per reel8 PIN DIP LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON PHOTOCOUPLER6N138 6N139Package Drawing(Dimensions in mm)Standard DIP TypeOption M Type8 PIN DIP LOW INPUT CURRENT HIGH GAINSPLIT DARLINGTON PHOTOCOUPLER 6N138 6N139Option S TypeOption S1 Type8 PIN DIP LOW INPUT CURRENT HIGH GAINSPLIT DARLINGTON PHOTOCOUPLER 6N138 6N139 Recommended pad layout for surface mount leadformDeviceMarkingEL6N138YWWVNotes6N138 denotes Device NumberY denotes 1 digit Year codeWW denotes 2 digit Week codeV denotes VDE (Optional)8 PIN DIP LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON PHOTOCOUPLER6N138 6N139Tape & Reel Packing SpecificationsOption TAOption TBDirection of feed from reel Direction of feed from reel8 PIN DIP LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON PHOTOCOUPLER6N138 6N139em PSolder Reflow T perature rofile8 PIN DIP LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON PHOTOCOUPLER6N138 6N139DISCLAIMER . Above specification may be changed without notice. EVERLIGHT will reserve authority on material changefor above specification. . When using this product, please observe the absolute maximum ratings and the instructions for usingoutlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets.ation sheets include materials protected under copyright of EVERLIGHT corporation. Please123. These specific don’t reproduce or cause anyone to reproduce them without EVERLIGHT’s consent.。

MBI1801 Datasheet VA.01- CN

*模拟时，PCB尺寸为76.2mm*114.3mm。请参考JEDEC JESD 51标准。 **越接近此最大范围值操作，IC的寿命越短、可靠度越低；超过此最大限定范围工作时，将会影响IC运作并造成毁损，因此建议的IC工作时的接合点温度在125°C以内。注：散热表现是与散热片面积、PCB层数与厚度相关。实测热阻值会与模拟值有所不同。使用者应根据所欲达到的散热表现，选择合适的封装与PCB布局，以增加散热能力。
-8-
2012 年 9 月, VA.01
MBI1801
“Pb-Free & Green”封装之焊接制程*
All-Ways-OnTM 高功率 LED 驱动芯片
聚积科技所生产的“Pb-Free & Green"的半导体产品遵循欧洲 RoHS 标准，封装选用 100%之纯锡以兼容于目前锡铅 (SnPb)焊接制程，且支持需较高温之无铅制程。纯锡目前已被欧美及亚洲区的电子产品客户与供货商广泛采用，成为取代含锡铅材料的最佳替代品。100%纯锡可生产于含锡铅(SnPb)锡炉制程，锡炉温度请参考 JEDEC J-STD-020C 标准规定。但若客户使用完全无铅锡膏和材料，则锡炉温度须达 J-STD-020C 标准之 245°C 至 260°C (参阅下图)。材料，则锡炉温度须达 J-STD-020C 标准之 245°C 至 260°C (参阅下图)。
OE =高电位时耐受电压
输出端电流输入端电压输出端漏电流输出电流1 电流偏差量输出电流 2 电流偏差量电流偏差量 vs. 输出电压电流偏差量 vs. 电源电压 Pull-up电阻
=17V, OE =High
VDS= 0.6V IOUT= 488mA VDS= 0.6V VDS= 0.8V IOUT= 976mA VDS= 0.8V

ZXTD618MCTA;中文规格书,Datasheet资料

A Product Line ofDiodes IncorporatedZXTD618MC DUAL 20V NPN LOW SATURATION SWITCHING TRANSISTORFeatures and Benefits• BV CEO > 20V•I C = 4.5A Continuous Collector Current•Low Saturation Voltage (150mV @ 1A)•R SAT = 47mΩ for a Low Equivalent On-Resistance•h FE specified up to 6A for high current gain hold up •Dual NPN saving footprint and component count•Low profile 0.8mm high package for thin applications •RθJA efficient, 40% lower than SOT26• 6mm2 footprint, 50% smaller than TSOP6 and SOT26 •Lead-Free, RoHS Compliant (Note 1)•Halogen and Antimony Free. “Green” Device (Note 2)•Qualified to AEC-Q101 Standards for High Reliability Mechanical Data• Case:DFN3020B-3•Case material: Molded Plastic. “Green” Molding Compound. •Terminals: Pre-Plated NiPdAu leadframe.•UL Flammability Rating 94V-0•Nominal package height: 0.8mm•Moisture Sensitivity: Level 1 per J-STD-020•Weight: 0.013 grams (approximate)Applications•DC-DC Converters• Chargingcircuits• Motorcontrol• Powerswitches• PortableapplicationsOrdering Information(Note 3)Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTD618MCTA DBB 7 8 3,000 Notes: 1. No purposefully added lead.2. Diodes Inc’s “Green” Policy can be found on our website at 3. For Packaging Details, go to our website at .Marking InformationDBB = Product Type Marking CodeTop View, Dot Denotes Pin 1Equivalent CircuitTop View Bottom ViewDFN3020B-8NPN Transistor NPN TransistorB2C2C2C1C1E2B2E1B1C1C2Pin 1Bottom ViewPin OutDBBMaximum Ratings @T A = 25°C unless otherwise specifiedParameter Symbol Limit UnitCollector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 20 Emitter-Base Voltage V EBO 7 Peak Pulse Current I CM 12 AContinuous Collector Current (Notes 4 and 7) I C4.5 Continuous Collector Current (Notes 5 and 7) I C 5 Base Current I B 1Thermal Characteristics @ T A = 25°C unless otherwise specifiedCharacteristic Symbol Value UnitPower DissipationLinear Derating Factor (Notes 4 & 7)P D1.512 W mW/°C (Notes 5 & 7)2.4519.6 (Notes 6 & 7)1.138 (Notes 6 & 8)1.713.6Thermal Resistance, Junction to Ambient (Notes 4 & 7) R θJA83.3 °C/W (Notes 5 & 7) 51.0(Notes 6 & 7) 111 (Notes 6 & 8) 73.5Thermal Resistance, Junction to Lead (Notes 7 & 9) R θJL 17.1 Operating and Storage Temperature Range T J , T STG-55 to +150 °C Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm 2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device ismeasured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half. 5. Same as note (4), except the device is measured at t <5 sec.6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm 2) FR4 PCB with high coverage of single sided 1oz copper.7. For a dual device with one active die.8. For dual device with 2 active die running at equal power.9. Thermal resistance from junction to solder-point (at the end of the collector lead).Thermal CharacteristicsA Product Line ofDiodes IncorporatedZXTD618MCElectrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit Test ConditionCollector-Base Breakdown Voltage BV CBO 40 100 - V I C = 100µA Collector-Emitter Breakdown Voltage (Note 10) BV CEO 20 27 - V I C = 10mA Emitter-Base Breakdown Voltage BV EBO 7.0 8.2 - V I E = 100µA Collector Cutoff Current I CBO - - 100 nA V CB = 30V Emitter Cutoff Current I EBO - - 100 n A V EB = 6V Collector Emitter Cutoff Current I CES - - 100 nA V CES = 16VStatic Forward Current Transfer Ratio (Note 10) h FE200300200 100 400 450 360 180 - - - - - I C = 10mA, V CE = 2V I C = 200mA, V CE = 2V I C = 2A, V CE = 2V I C = 6A, V CE = 2VCollector-Emitter Saturation Voltage (Note 10) V CE(sat)- - - - - 8 90 115 190 210 15150135 250 300 mV I C = 0.1A, I B = 10mA I C = 1A, I B = 10mA I C = 2A, I B = 50mA I C = 3A, I B = 100mA I C = 4.5A, I B = 125mABase-Emitter Turn-On Voltage (Note 10) V BE(on) - 0.88 0.97 V I C = 4.5A, V CE = 2V Base-Emitter Saturation Voltage (Note 10) V BE(sat) - 0.98 1.07 V I C = 4.5A, I B = 125mA Output Capacitance C obo - 23 30 pF V CB = 10V. f = 1MHzTransition Frequency f T100 140 - MHz V CE = 10V, I C = 50mA,f = 100MHzTurn-on Time t on - 170 - ns V CC = 10V, I C = 3A I B1 = I B2 = 10mA Turn-off Time t off- 400 - ns Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%V CE(SAT) v I CI C Collector Current (A)V BE(SAT) v I CI C Collector Current (A)I C Collector Current (A)V CE(SAT) v I CV B E (S A T ) (V )I C Collector Current (A)V BE(ON) v I CI C Collector Current (A)T y p i c a l G a i n (h F E )Package Outline DimensionsSuggested Pad LayoutDFN3020B-8Dim Min Max Typ A 0.770.83 0.80 A1 0 0.05 0.02 A3 - - 0.15 b 0.250.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e - - 0.65 E 1.95 2.075 2.00 E2 0.430.63 0.53 L 0.250.35 0.30 Z - - 0.375 All Dimensions in mmDimensionsValue (in mm)C 0.650 G 0.285 G1 0.090 X 0.400 X11.120 Y0.730 Y1 0.500 Y20.365IMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2011, Diodes Incorporated分销商库存信息: DIODESZXTD618MCTA。

MD1801-1800 PDF中文资料

MD1800 1801 中文资料PRODUCT DESCRIPTIONMD1800/01是高性能的主要传感器（PSR）和单片开关电源控制器的设计电流模式控制小电源设备。

建立精确的CV／CC控制电路，消除了光耦合器，TL431及其相关回路装置。

高度集成的设计，高性能功率BJT和控制器和各种在一个芯片的保护电路，使外围元件，大大节约了成本，md180x可以简单地设计了一个典型的反激式开关变换器，独特的驱动技术推动的特点，耐压和优异的转换效率FEATURE◆滞过温度保护（OTP）电路◆输出电压保护（OVP/UVP）◆高效率,符合效率标准6级◆建立810v @ md1801，在700V@md1800功率BJT◆PSR控制替代了光耦和TL431◆精准CC/ CV控制◆空载损耗< 100 MW◆自动重启功能◆超低启动电流PINOUT CONFIGURATIONPIN Function DescriptionPin Name Function Description1 Vcc 控制器电源供应引脚。

为让控制器得到更稳定的电压，外部滤波电容必须使用低阻抗的电解电容（LOW ESR）2 FB 输出反馈引脚，通过辅助绕组电压检测输出条件变压器3 CPC 连接100+nf电容，此引脚补偿输出电缆压降4 CS 连外部的初级线圈电流传感器Rcs，控制器可以通过外部传感器电阻检测初级线圈电流。

当电阻上电压达到最大值时，内部功率晶体管将立即关闭5-6 HV 连接内部功率晶体管的集电极8 GND 接地引脚FUNCTIONAL BlOCK DIAGRAMABSOLUTE MAXIMUM RATINGSHV PIN最大电压-0.3~700V 存储温度-55~+150°IC Peak Current MD1800 280mA Lead Temperature +260°/10S MD1801 350mA ESD(Human BodyModel)2000VVCC Pin 电压8.6V 注释：1.所有电压是以IC GND为地(25°)2.持续时间不超过2ms3.即时最大额定范围指是对产品产FB Pin 电压7V其他Pin 电压Vcc+0.3V 生永久损伤的；长时间的超额定运行将影响产品的可靠性运行温度0~+150°ELECTRICAL CHARACTERISTICSFUNCTION DESCRIPTIONMD180x是专门为充电器、适配器和数字产品设计的。

MD1801规格书

Parameter
VDD UVLO
Star-up Voltage Shut down Star-up Current Operating g Current Max. Operating Voltage
Symbol
Conditions
IN
Min
7.5 3.0 8.0 3.3 0.2 400 3.4 4 2.85 1.2 2.9 1.5 700 810 135 125
4W 5W
protection circuits in one chip, to minimize the peripheral components to save the cost greatly.
Open Frame OpenFrame
5W 5.5W
10-Mar-2013@Rve.02 MIX-PD-155787
MD1800/01 Datasheet
Telephone 0755-83239885 samples
FUNCTION DESCRIPTION
MD180X is specially designed for the charger/adapter of small power digital products. To use PSR control technology to provide accurate (CV/CC) characteristics. The controller works in PFM mode and the switching frequency can be automaticially adjusted as per the load. Optimized driving circuit greatly promotes withstand voltage of the power BJT and minimizes the switching loss, so as to make the circuit have excellent converting g efficiency. y

2SD882;中文规格书,Datasheet资料

October 2007Rev 31/82SD882NPN medium power transistorFeatures■High current■Low saturation voltage ■Complement to 2SB772Applications■Voltage regulation ■Relay driver ■Generic switch ■Audio power amplifier ■DC-DC converterDescriptionThe device is a NPN transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772.Table 1.Device summaryOrder code Marking Package Packing 2SD882D882SOT -32T ubeAbsolute maximum ratings2SD882 1 Absolute maximum ratingsTable 2.Absolute maximum ratingSymbol Parameter Value UnitV CBO Collector-base voltage (I E = 0) 60VV CEO Collector-emitter voltage (I B = 0) 30VV EBO Collector-base voltage (I C = 0) 5VI C Collector current3AI CM Collector peak current (t P < 5ms)6AI B Base current1AI BM Base peak current (t P < 5ms)2AP TOT T otal dissipation at T c = 25°C12.5WT STG Storage temperature-65 to 150°CT J Max. operating junction temperature150°CTable 3.Thermal dataSymbol Parameter Value UnitR thJ-case Thermal resistance junction-case max10°C/W 2/83/82 Electrical characteristics(T CASE = 25°C; unless otherwise specified)Table 4.Electrical characteristicsSymbol ParameterTest conditions Min.Typ.Max.Unit I CES Collector cut-off current(V BE = 0)V CE = 60 V 10µA I CEO Collector cut-off current (I B = 0)V CE = 30 V 100µA I EBOEmitter cut-off current (I C = 0)V EB = 5 V10µAV (BR)CEO(1)Collector-emitter breakdownvoltage (I B = 0 )I C = 10 mA 30VV (BR)CBO Collector-base breakdownvoltage(I E = 0 )I C = 100 µA60VV (BR)EBO Emitter-base breakdownvoltage(I C = 0 )I E = 100 µA5V V CE(sat)(1)Collector-emitter saturationvoltageI C = 1 A I B = 50 mAI C = 2 A I B = 100 mAI C = 3 A I B = 150 mA 0.40.71.1V V V V BE(sat)(1)1.Pulsed duration = 300 ms, duty cycle ≤1.5%.Base-emitter saturation voltage I C = 2 A I B = 100 mA 1.2Vh FE DC current gain I C = 100 mA V CE = 2 V I C = 1 A V CE = 2 V I C = 3 A V CE = 2 V 1008030300f TTransition frequencyI C = 0.1 A V CE = 10 V100MHzcharacteristics (curves) 2.1 Typical4/82SD882Package mechanical data 3 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in ECOPACK®packages. These packages have a Lead-free second level interconnect . The category ofsecond level interconnect is marked on the package and on the inner box label, incompliance with JEDEC Standard JESD97. The maximum ratings related to solderingconditions are also marked on the inner box label. ECOPACK is an ST trademark.ECOPACK specifications are available at: 5/8Package mechanical data2SD8826/82SD882Revision history7/84 Revision historyTable 5.Document revision historyDate RevisionChanges09-Sep-20052Final datasheet. New template 02-Oct-20073Updated mechanical data2SD8828/8Please Read Carefully:Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.All ST products are sold pursuant to ST’s terms and conditions of sale.Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.UNLESS O THERWISE SET FO RTH IN ST’S TERMS AND CO NDITIO NS O F SALE ST DISCLAIMS ANY EXPRESS O R IMPLIED WARRANTY WITH RESPECT TO THE USE AND/O R SALE O F ST PRO DUCTS INCLUDING WITHO UT LIMITATIO N IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPRO VED IN WRITING BY AN AUTHO RIZED ST REPRESENTATIVE, ST PRO DUCTS ARE NO T RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.ST and the ST logo are trademarks or registered trademarks of ST in various countries.Information in this document supersedes and replaces all information previously supplied.The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.© 2007 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America分销商库存信息: STM2SD882。

AS1364-BTDT-18-1K,AS1364-BTDT-30-1K,AS1364-BTDT-33-1K,AS1364-BTDT-45-1K, 规格书,Datasheet 资料

Figure 1. AS1364 - Typical Application Diagram
3 VIN CIN 4.7µF On Off IN 4 IN 2 EN 8 GND
6 OUT 5 COUT 4.7µF VOUT
AS1364
OUT 1 POK 7 SET/BYP Reset Output CBYP 10nF
8 GND 7 SET/BYP
AS1364
IN 3 IN 4 6 OUT 5 OUT
4.1 Pin Descriptions
Table 2. Pin Descriptions Pin Number 1 Pin Name POK Description Note: Open-Drain POK Output. POK remains low while VOUT is below the POK threshold. Connect a 100k pull-up resistor from this pin to OUT to obtain an output voltage (see Figure 1). Active-Low Shutdown Input. A logic low disables the output and reduces the supply current to 0.1µA. In shutdown, the POK output is low and OUT high impedance. VDD: Normal operation. GND: Shutdown. 2.0V to 5.5V Supply Voltage. Bypass with a 4.7µF input capacitor to GND (see Dropout Voltage on page 11). These inputs are internally connected, but they also must be externally connected for proper operation. Regulator Output. Bypass with a 4.7µF low-ESR output capacitor to GND. Connect the OUT pins together externally. Voltage-Setting Input. Connect to GND to select the factory-preset output voltage. Connect this pin to an external resistor-divider for adjustable-output operation (see Figure 1) – (AS1364-AD only) Bypass Pin. Connect a 10nF capacitor from this pin to OUT to improve PSRR and noise performance. (AS1364-AD does not offer this feature) Ground Connect to PCB metal area for heatsink purposes. May be left open or connected to common ground.

SI2302-TP;中文规格书,Datasheet资料

Figure 6. Body Diode Forward Voltage Variation with Source Current
Revision: A
/

3 of 5
2011/01/01
VGS, Gate to Source Voltage (V) ID, Drain Current (A)
VTH, Normalized Gate-Source Threshold Voltage
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
IS, Source-drain current (A)
ID, Drain Current (A)
SI2302
10 25 C
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol VDS ID IDM VGS
PD R©JA
TJ
TSTG
Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage
MCC
TM
Micro Commercial Components
5 VDS=10V ID=3.6A
4
3
2
1
0
0
2
4
6
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDD
RL VIN
D
VOUT
VGS
RGEN G
S
Figure 9. Switching Test Circuit

BT139-600,127;BT139-800G,127;BT139-800,127;中文规格书,Datasheet资料

8 50 mA
-
10 35 -
10 25 -
10 50 mA
-
22 70 -
22 70 -
22 100 mA
-
7 40 -
7 40 -
7 60 mA
-
20 60 -
20 60 -
20 90 mA
-
8 40 -
8 40 -
8 60 mA
-
10 60 -
10 60 -
10 90 mA
-
6 45 -
6 45 -
BT139 series
Triacs
Rev. 04.00 — 6 July 2004
Product data sheet
1. Product proﬁle
1.1 General description
Passivated triacs in a SOT78 plastic package. intended for use in applications requiring high bidirectional transient and blocking voltage capability.
Package
Name
BT139-600
TO-220AB
BT139-600F
BT139-800
BT139-800F
BT139-800G
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
BT139 series
Triacs
160 ITSM (A)

BT137-600D,127;中文规格书,Datasheet资料

1.Product profile1.1General descriptionPlanar passivated very sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. This very sensitive gate "series D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.1.2Features and benefitsDirect triggering from low power drivers and logic ICs High blocking voltage capability Low holding current for low current loads and lowest EMI at commutationPlanar passivated for voltage ruggedness and reliability Triggering in all four quadrants Very sensitive gate1.3ApplicationsGeneral purpose motor controlGeneral purpose switching1.4Quick reference dataBT137-600D4Q TriacRev. 3 — 24 March 2011Product data sheetTable 1.Quick reference data Symbol Parameter ConditionsMin Typ Max Unit V DRM repetitive peak off-state voltage --600V I TSMnon-repetitive peak on-state current full sine wave; T j(init)=25°C; t p =20ms; see Figure 4;see Figure 5--65AI T(RMS)RMS on-state currentfull sine wave; T mb ≤102°C; see Figure 1; see Figure 2;see Figure 3--8A2.Pinning information3.Ordering informationStatic characteristicsI GTgate trigger currentV D =12V;I T =0.1A; T2+ G+; T j =25°C; see Figure 7- 2.55mA V D =12V;I T =0.1A; T2+ G-; T j =25°C; see Figure 7- 3.55mA V D =12V;I T =0.1A; T2- G-; T j =25°C; see Figure 7- 3.55mA V D =12V;I T =0.1A; T2- G+; T j =25°C; see Figure 7- 6.510mA I Hholding currentV D =12V;T j =25°C;see Figure 9- 1.510mATable 1.Quick reference data …continued Symbol Parameter ConditionsMin Typ Max Unit Table 2.Pinning information Pin Symbol Description Simplified outline Graphic symbol1T1main terminal 1SOT78 (TO-220AB)2T2main terminal 23G gatembT2mounting base;main terminal 212mb3sym051T1GT2Table 3.Ordering informationType numberPackage NameDescriptionVersion BT137-600DTO-220ABplastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220ABSOT784.Limiting valuesTable 4.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditionsMin Max Unit V DRM repetitive peak off-state voltage -600V I T(RMS)RMS on-state current full sine wave; T mb ≤102°C;see Figure 1; see Figure 2; see Figure 3-8A I TSMnon-repetitive peak on-state currentfull sine wave; T j(init)=25°C;t p =20ms; see Figure 4; see Figure 5-65A full sine wave; T j(init)=25°C; t p =16.7ms-71A I 2t I 2t for fusing t p =10ms; sine-wave pulse-21A 2s dI T /dtrate of rise of on-state currentI T =12A; I G =0.2A; dI G /dt =0.2A/µs; T2+ G+-50A/µs I T =12A; I G =0.2A; dI G /dt =0.2A/µs; T2+ G--50A/µs I T =12A; I G =0.2A; dI G /dt =0.2A/µs; T2- G--50A/µs I T =12A; I G =0.2A; dI G /dt =0.2A/µs; T2- G+-10A/µs I GM peak gate current -2A V GM peak gate voltage -5V P GM peak gate power -5W P G(AV)average gate power over any 20 ms period-0.5W T stg storage temperature -40150°C T jjunction temperature-125°C5.Thermal characteristicsTable 5.Thermal characteristicsSymbol ParameterConditionsMin Typ Max Unit R th(j-mb)thermal resistance from junction to mounting base half cycle; see Figure 6-- 2.4K/W full cycle; see Figure 6--2K/W R th(j-a)thermal resistance from junction to ambientin free air-60-K/W6.CharacteristicsTable 6.CharacteristicsSymbol Parameter Conditions Min Typ Max Unit Static characteristicsI GT gate trigger current V D=12V;I T=0.1A; T2+ G+;T j=25°C;see Figure 7- 2.55mAV D=12V;I T=0.1A; T2+ G-;T j=25°C;see Figure 7- 3.55mAV D=12V;I T=0.1A; T2- G-;T j=25°C;see Figure 7- 3.55mAV D=12V;I T=0.1A; T2- G+;T j=25°C;see Figure 7- 6.510mAI L latching current V D=12V;I G=0.1A; T2+ G+;T j=25°C;see Figure 8- 1.615mAV D=12V;I G=0.1A; T2+ G-;T j=25°C;see Figure 8-8.520mAV D=12V;I G=0.1A; T2- G-;T j=25°C;see Figure 8- 1.215mAV D=12V;I G=0.1A; T2- G+;T j=25°C;see Figure 8- 2.520mA I H holding current V D=12V;T j=25°C;see Figure 9- 1.510mA V T on-state voltage I T=10A; T j=25°C; see Figure 10- 1.3 1.65VV GT gate trigger voltage V D=12V;I T=0.1A; T j=25°C;see Figure 11-0.7 1.5VV D=400V; I T=0.1A; T j=125°C;see Figure 110.250.4-VI D off-state current V D=600V; T j=125°C-0.10.5mA Dynamic characteristicsdV D/dt rate of rise of off-statevoltage V DM=402V;T j=125°C;R GT1=1kΩ;exponential waveform; gate open circuit-5-V/µst gt gate-controlled turn-ontime I TM=12A; V D=600V; I G=0.1mA;dI G/dt=5A/µs-2-µs7.Package outlineFig 12.Package outline SOT78 (TO-220AB)8.Revision historyTable 7.Revision historyDocument ID Release date Data sheet status Change notice SupersedesBT137-600D v.320110324Product data sheet-BT137-600D_2 Modifications:•Various changes to content.•The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors.•Legal texts have been adapted to the new company name where appropriate.BT137-600D_220010601Product specification-BT137_SERIES_D_1分销商库存信息: NXPBT137-600D,127。

MAX1801EKA+T,MAX1801EKA+T, 规格书,Datasheet 资料

2
_______________________________________________________________________________________
芯天下--/
Digital Camera Step-Up Slave DC-DC Controller
DCON GND
________________________________________________________________ Maxim Integrated Products
1
For price, delivery, and to place orders, please contact Maxim Distribution at 1-888-629-4642, or visit Maxim’s website at .
PARAMETER GENERAL VIN Supply Voltage Operating Range VIN Undervoltage Lockout Threshold REF Input Range REF Undervoltage Lockout Threshold Shutdown Supply Current Sleep-Mode Supply Current Quiescent Supply Current OSCILLATOR INPUT OSC Input Leakage Current Oscillator Frequency Range OSC Clock Low Trip Level OSC Clock High Trip Level Maximum Duty Cycle Adjustment Range (Note 2) Maximum Duty Cycle (Note 2) Default Maximum Duty Cycle (Note 2) INPUTS/OUTPUTS DCON Input Leakage Current DCON Input Sleep-Mode Threshold REF Input Current ERROR AMPLIFIER FB Regulation Voltage FB to COMP Transconductance FB to COMP Maximum Voltage Gain FB Input Leakage Current VFB = 1.35V -5µA < ICOMP < 5µA 1.238 70 1.250 100 2000 30 100 1.263 160 V µS V/V nA VDCON = 5.5V IIN ≤ 10µA VDCON = 0 VDCON = VREF VDCON = VREF , during soft-start 0.35 9 0.4 0.5 3.3 13 100 0.45 1.1 10 30 µA nA V VDCON = 0.625V fOSC = 100kHz VDCON = 0.625V, fOSC = 100kHz VDCON = 1.25V, fOSC = 100kHz VOSC = 1.5V 100 0.20 1.00 0.575 40 50 84 0.25 1.05 0.625 0.04 1 1000 0.30 1.10 0.675 90 µA kHz V V % % % VREF rising VIN = 5.5V, VDCON = 0, VREF = 0 VIN = 3.3V, VDCON = 0, VREF = 1.25V VOSC = 0, VFB = 0 VIN rising 2.7 2.2 1.19 0.9 2.35 1.25 1.0 0.01 5 124 5.5 2.5 1.31 1.1 1 10 300 V V V V µA µA µA CONDITIONS MIN TYP MAX UNITS

BTA140-600,127;BTA140-800,127;中文规格书,Datasheet资料

BTA140 series TriacsNXP Semiconductors Product specificationTriacs BTA140 seriesTHERMAL RESISTANCESSYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNIT R th j-mb Thermal resistance full cycle -- 1.0K/W junction to mounting base half cycle -- 1.4K/W R th j-aThermal resistance in free air -60-K/Wjunction to ambientSTATIC CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT I GTGate trigger currentV D = 12 V; I T = 0.1 AT2+ G+-635mA T2+ G--1035mA T2- G--1135mA T2- G+-2370mA I LLatching currentV D = 12 V; I GT = 0.1 AT2+ G+-840mA T2+ G--3060mA T2- G--1840mA T2- G+-1560mA I H Holding current V D = 12 V; I GT = 0.1 AT2+-760mA T2--1260mA V T On-state voltage I T = 30 A- 1.3 1.55V V GT Gate trigger voltage V D = 12 V; I T = 0.1 A-0.7 1.5V V D = 400 V; I T = 0.1 A; T j = 125 ˚C 0.250.4-V I DOff-state leakage currentV D = V DRM(max); T j = 125 ˚C-0.10.5mADYNAMIC CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNIT dV D /dt Critical rate of rise of V DM = 67% V DRM(max); T j = 125 ˚C;100300-V/µs off-state voltageexponential waveform; gate open circuit dV com /dt Critical rate of change of V DM = 400 V; T j = 95 ˚C; I T(RMS) = 25 A;-10-V/µs commutating voltage dI com /dt = 9 A/ms; gate open circuit t gtGate controlled turn-on I TM = 30 A; V D = V DRM(max); I G = 0.1 A;-2-µstimedI G /dt = 5 A/µsLegal informationDATA SHEET STATUSNotes1.Please consult the most recently issued document before initiating or completing a design.2.The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet at URL . DOCUMENT STATUS (1)PRODUCT STATUS (2)DEFINITIONObjective data sheet Development This document contains data from the objective specification for product development.Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet ProductionThis document contains the product specification.DEFINITIONSProduct specification ⎯ The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXPSemiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.DISCLAIMERSLimited warranty and liability ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give anyrepresentations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or reworkcharges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’aggregate and cumulative liability towards customer for the products described herein shall be limited inaccordance with the Terms and conditions of commercial sale of NXP Semiconductors.Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to informationpublished in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severeproperty or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s own risk.Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXPSemiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXPSemiconductors product is suitable and fit for thecustomer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.Legal informationNXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third partycustomer(s). NXP does not accept any liability in this respect.Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.Terms and conditions of commercial sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at /profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.Export control ⎯ This document as well as the item(s) described herein may be subject to export controlregulations. Export might require a prior authorization from national authorities.Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.Non-automotive qualified products ⎯ Unless this data sheet expressly states that this specific NXPSemiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.In the event that customer uses the product for design-in and use in automotive applications to automotivespecifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXPSemiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.Contact informationFor additional information please visit: For sales offices addresses send e-mail to: salesaddresses@Customer notificationThis data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the content, except for the legal definitions and disclaimers. © NXP B.V. 2011All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Printed in The Netherlands分销商库存信息:NXPBTA140-600,127BTA140-800,127。

PCM1801中文资料

®
PCM1801
2
元器件交易网
PIN CONFIGURATION
Top View
SOIC
1 VINL
VREF1 14
2 VINR
VREF2 13
3 DGND
AGND 12
4 VDD
PCM1801U
VCC 11
5 SCKI
FMT 10
6 BCK
BYPAS 9
7 LRCK
DOUT 8
DC ACCURACY Gain Mismatch Channel-to-Channel Gain Error Gain Drift Bipolar Zero Error Bipolar Zero Drift
IOH = –1.6mA IOL = +3.2mA
256fS 384fS 512fS
High-Pass Filter Bypass High-Pass Filter Bypass
PIN ASSIGNMENTS
PIN NAME I/O DESCRIPTION
1
VINL
IN Analog Input, Lch.
2
VINR
IN Analog Input, Rch.
3
DGND — Digital Ground
4
VDD
— Digital Power Supply
5
SCKI
IN System Clock Input; 256fS, 384fS, or 512fS.
FS (VIN = 0dB) –3dB
2.828 2.1 30 170
Vp-p V kΩ
kHz
DIGITAL FILTER PERFORMANCE Passband Stopband Passband Ripple Stopband Attenuation Delay Time (Latency) High Pass Frequency Response

AS1582T-X中文资料

(Boldface applies over full temperature range).
Parameters 2.5V Version Output Voltage
ELECTRICAL CHARACTERISTICS at VS =14V, Ta=25°C, Io=10mA, C2=100µF, unless otherwise specified. (Note 1)
APPLICATIONS
• 3.3V to 2.8V ATX Power Supplies • 3.3V to 2.9V for Portable PENTIUM cessor • 5V to 3.5V VRE Supply • High Efficiency “Green” Computer Systems
Rev. 10/2/00
元器件交易网
AS1582
PIN DESCRIPTION
1. 2. 3. 4. 5. Sense = Allows Kelvin sense of VOUT at the load. (Positive side of the reference voltage of the device). ADJ = Negative side of the reference voltage for the device. Adding a small bypass capacitor from the ADJ pin to ground will improve the transient response. VOUT = Power output of the device. VCTRL = Supply pin for the control circuitry of the device. The current flow into this pin will be about 1% of the output current. VCTRL must be between 1.0V and 1.3V greater than the output voltage for the device to regulate. VIN = Output load current is supplied through this pin. VIN must be between 0.1V and 0.8V greater than the output voltage for the device to regulate.

东芝2SA1015管数据表说明书

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)2SA1015Audio Frequency General Purpose Amplifier ApplicationsDriver Stage Amplifier Applications•High voltage and high current: V CEO = −50 V (min),I C = −150 mA (max)•Excellent h FE linearity : h FE (2) = 80 (typ.) at V CE = −6 V, I C = −150 mA:h FE (I C = −0.1 mA)/h FE (I C = −2 mA) = 0.95 (typ.)•Low noise: NF = 1dB (typ.) (f = 1 kHz)•Complementary to 2SC1815.Absolute Maximum Ratings (Ta = 25°C)Characteristics SymbolRatingUnitCollector-base voltage V CBO−50 VCollector-emitter voltage V CEO−50 VEmitter-base voltage V EBO−5 VCollector current I C−150 mABase current I B−50 mACollector power dissipation P C 400mWJunction temperature T j125 °CStorage temperature range T stg−55~125 °CNote: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change in temperature, etc.) may cause this product todecrease in the reliability significantly even if the operating conditions (i.e. operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability testreport and estimated failure rate, etc).Electrical Characteristics (Ta = 25°C)Characteristics Symbol TestCondition MinTyp.Max Unit Collector cut-off current I CBO V CB=−50 V, I E= 0 ⎯ ⎯−0.1μA Emitter cut-off current I EBO V EB=−5 V, I C= 0 ⎯⎯−0.1μAh FE (1)(Note)V CE=−6 V, I C=−2 mA 70 ⎯ 400DC current gainh FE (2)V CE=−6 V, I C=−150 mA 25 80 ⎯Collector-emitter saturation voltage V CE (sat)I C=−100 mA, I B=−10 mA ⎯−0.1 −0.3VBase-emitter saturation voltage V BE (sat)I C=−100 mA, I B=−10 mA ⎯⎯−1.1V Transition frequency f T V CE=−10 V, I C=−1 mA 80 ⎯⎯ MHz Collector output capacitance C ob V CB=−10 V, I E= 0, f = 1 MHz ⎯ 4 7 pF Base intrinsic resistance r bb’V CE=−10 V, I E= 1 mA, f = 30 MHz ⎯ 30 ⎯ΩNoise figure NF V CE=−6 V, I C=−0.1 mA, R G= 10 kΩ,f = 1 kHz⎯ 1.0 10 dBNote: h FE (1) classification O: 70~140, Y: 120~240, GR: 200~400Unit: mmJEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.)RESTRICTIONS ON PRODUCT USE•Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.•This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.•Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.•Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document.•Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.•Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.•The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.•ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITYWHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.•Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. •Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.。

744710215;中文规格书,Datasheet资料

5.1 5.0 4.02012-06-272012-05-022009-06-30SStSStRStSStCZWürth Elektronik eiSos GmbH & Co. KGEMC & Inductive SolutionsMax-Eyth-Str. 174638 WaldenburgGermanyTel. +49 (0) 79 42 945 - 0A Dimensions: [mm]F Typical Impedance Characteristics:H4: Classification Wave Soldering Profile:H5: Classification Wave ProfileProfile FeaturePreheat- Temperature Min (T smin )- Temperature Typical (T stypical ) - Temperature Max (T smax ) - Time (t s ) from (T smin to T smax )Δ preheat to max Temperature Peak temperature (T p )Time of actual peak temperature (t p )Ramp-down rate - Min - Typical - MaxTime 25°C to 25°C Pb-Free Assembly 100°C 120°C 130°C 70 seconds 150°C max.250°C - 260°C max. 10 secondsmax. 5 second each wave ~ 2 K/s ~ 3.5 K/s ~ 5 K/s 4 minutesSn-Pb Assembly 100°C 120°C 130°C 70 seconds 150°C max.235°C - 260°C max. 10 secondsmax. 5 second each wave ~ 2 K/s ~ 3.5 K/s ~ 5 K/s 4 minutesrefer to EN 61760-1:2006H Soldering Specifications:I Cautions and Warnings:The following conditions apply to all goods within the product series of WE-SDof Würth Elektronik eiSos GmbH & Co. KG:General:All recommendations according to the general technical specifications of the data-sheet have to be complied with.The disposal and operation of the product within ambient conditions which probably alloy or harm the wire isolation has to be avoided.If the product is potted in customer applications, the potting material might shrink during and after hardening. Accordingly to this the product is exposed to the pressure of the potting material with the effect that the core, wire and termination is possibly damaged by this pressure and so the electrical as well as the mechanical characteristics are endanger to be affected. After the potting material is cured, the core, wire and termination of the product have to be checked if any reduced electrical or mechanical functions or destructions have occurred.The responsibility for the applicability of customer specific products and use in a particular customer design is always within the authority of the customer. All technical specifications for standard products do also apply for customer specific products.Washing varnish agent that is used during the production to clean the application might damage or change the characteristics of the wire in-sulation, the marking or the plating. The washing varnish agent could have a negative effect on the long turn function of the product.Direct mechanical impact to the product shall be prevented as the ferrite material of the core could flake or in the worst case it could break. Product specific:Follow all instructions mentioned in the datasheet, especially:•The solder profile has to be complied with according to the technical wave soldering specification, otherwise no warranty will be sustai-ned.•All products are supposed to be used before the end of the period of 12 months based on the product date-code, if not a 100% solderabi-lity can´t be warranted.•Violation of the technical product specifications such as exceeding the nominal rated current will result in the loss of warranty.1. General Customer ResponsibilitySome goods within the product range of Würth Elektronik eiSos GmbH & Co. KG contain statements regarding general suitability for certain application areas. These statements about suitability are based on our knowledge and experience of typical requirements concerning the are-as, serve as general guidance and cannot be estimated as binding statements about the suitability for a customer application. The responsibi-lity for the applicability and use in a particular customer design is always solely within the authority of the customer. Due to this fact it is up to the customer to evaluate, where appropriate to investigate and decide whether the device with the specific product characteristics described in the product specification is valid and suitable for the respective customer application or not.2. Customer Responsibility related to Specific, in particular Safety-Relevant ApplicationsIt has to be clearly pointed out that the possibility of a malfunction of electronic components or failure before the end of the usual lifetime can-not be completely eliminated in the current state of the art, even if the products are operated within the range of the specifications.In certain customer applications requiring a very high level of safety and especially in customer applications in which the malfunction or failure of an electronic component could endanger human life or health it must be ensured by most advanced technological aid of suitable design of the customer application that no injury or damage is caused to third parties in the event of malfunction or failure of an electronic component.3. Best Care and AttentionAny product-specific notes, warnings and cautions must be strictly observed.4. Customer Support for Product SpecificationsSome products within the product range may contain substances which are subject to restrictions in certain jurisdictions in order to serve spe-cific technical requirements. Necessary information is available on request. In this case the field sales engineer or the internal sales person in charge should be contacted who will be happy to support in this matter.5. Product R&DDue to constant product improvement product specifications may change from time to time. As a standard reporting procedure of the Product Change Notification (PCN) according to the JEDEC-Standard inform about minor and major changes. In case of further queries regarding the PCN, the field sales engineer or the internal sales person in charge should be contacted. The basic responsibility of the customer as per Secti-on 1 and 2 remains unaffected.6. Product Life CycleDue to technical progress and economical evaluation we also reserve the right to discontinue production and delivery of products. As a stan-dard reporting procedure of the Product Termination Notification (PTN) according to the JEDEC-Standard we will inform at an early stage about inevitable product discontinuance. According to this we cannot guarantee that all products within our product range will always be available. Therefore it needs to be verified with the field sales engineer or the internal sales person in charge about the current product availability ex-pectancy before or when the product for application design-in disposal is considered.The approach named above does not apply in the case of individual agreements deviating from the foregoing for customer-specific products.7. Property RightsAll the rights for contractual products produced by Würth Elektronik eiSos GmbH & Co. KG on the basis of ideas, development contracts as well as models or templates that are subject to copyright, patent or commercial protection supplied to the customer will remain with Würth Elektronik eiSos GmbH & Co. KG.8. General Terms and ConditionsUnless otherwise agreed in individual contracts, all orders are subject to the current version of the “General Terms and Conditions of Würth Elektronik eiSos Group”, last version available at .J Important Notes:The following conditions apply to all goods within the product range of Würth Elektronik eiSos GmbH & Co. KG:分销商库存信息: WURTH-ELECTRONICS 744710215。

BT151X-800RDG,127;中文规格书,Datasheet资料

15 8 10 4 5
0 10−2
10−1
1 10 surge duration (s)
0 −50
0
50
100
Ths (°C)
150
f = 50 Hz; Ths 87 C.
Fig 4.
RMS on-state current as a function of surge duration; maximum values
2 of 12
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NXP Semiconductors
BT151X series
Thyristors
15 Ptot (W) 2.2 10 2.8 4 conduction angle (degrees) 30 60 90 120 180 0 0 2 4 6 IT(AV) (A) form factor a 4 2.8 2.2 1.9 1.57
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 1 November 2011
4 of 12
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NXP Semiconductors
BT151X series
Thyristors
5. Thermal characteristics
5 of 12
/
NXP Semiconductors
BT151X series
Thyristors
7. Characteristics
Table 6. Characteristics Tj = 25 C unless otherwise stated Symbol IGT IL IH VT VGT Parameter gate trigger current latching current holding current on-state voltage gate trigger voltage Conditions VD = 12 V; IT = 0.1 A; Figure 8 VD = 12 V; IGT = 0.1 A; Figure 10 VD = 12 V; IGT = 0.1 A; Figure 11 IT = 23 A; Figure 9 VD = 12 V; IT = 0.1 A; Figure 7 VD = VDRM(max); IT = 0.1 A; Tj = 125 C ID, IR off-state leakage current critical rate of rise of off-state voltage VD = VDRM(max); VR = VRRM(max); Tj = 125 C VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; Figure 12 gate open circuit RGK = 100 tgt tq gate controlled turn-on time circuit commuted turn-on time ITM = 40 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s VD = 67% VDRM(max); Tj = 125 C; ITM = 20 A; VR = 25 V; dITM/dt = 30 A/s; dVD/dt = 50 V/s; RGK = 100 50 200 130 1000 2 70 V/s V/s s s Min 0.25 Typ 2 10 7 1.4 0.6 0.4 0.1 Max 15 40 20 1.75 1.5 0.5 Unit mA mA mA V V V mA Static characteristics

DS18S20中文资料

PRELIMINARY
DS18S20 High Precision 1-Wire® Digital Thermometer
PIN ASSIGNMENT
DALLAS
DS18S20
123
BOTTOM VIEW 123
DS18S20 To-92 Package
NC
1
8
NC
NC
2
7
NC
VDD
3
6
NC
DQ
4
5
OVERVIEW
The block diagram of Figure 1 shows the major components of the DS18S20. The DS18S20 has three main data components: 1) 64–bit lasered ROM, 2) temperature sensor, 3) nonvolatile temperature alarm triggers TH and TL. The device derives its power from the 1–Wire communication line by storing energy on an internal capacitor during periods of time when the signal line is high and continues to operate off this power source during the low times of the 1–Wire line until it returns high to replenish the parasite (capacitor) supply. As an alternative, the DS18S20 may also be powered from an external 3 volt – 5 volt supply.

MITSUBISHI ELECTRIC MGF1801BT 说明书

Publication Date : Apr., 2011< High-power GaAs FET (small signal gain stage) > MGF1801BTS to X BAND / 0.2Wnon - matchedDESCRIPTIONThe MGF1801BT, medium-power GaAs FET with an N-channelSchottky gate, is designed for use in S to X band amplifiers andoscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable formicrostrip circuits. The MGF1801BT is mounted in the super 24 tape. FEATURES∙ High linear power gainGlp=9.0dB @f=8GHz∙ High P1dBP1dB=23dBm(TYP .) @f=8GHz∙ High reliability and stabilityAPPLICATION∙ S to X Band medium-power amplifiers and oscillatorsQUALITY∙ IGRECOMMENDED BIAS CONDITION∙ VDS=6V,Id=100mAAbsolute maximum ratings (Ta=25︒C)Symbol Parameter Ratings Unit V GDOGate to drain breakdown voltage-8 V V GSOGate to source breakdown voltage -8 V I DDrain current 250 mA I GRReverse gate current -0.6 mA I GFForward gate current 1.5 mA P TTotal power dissipation 1.2 W TchCannel temperature 175 ︒C Tstg Storage temperature -65 to +175︒CElectrical characteristics (Ta=25︒C)Symbol ParameterTest conditions Limits UnitMin. Typ. Max. V (BR)GDOGate to drain breakdown voltage Ig =200μA -8 - - V V (BR)GSOGate to source breakdown voltage Ig =200μA -8 - - V IG SSGate to source leakage current V DS =0V,V GS =-3V - - 20 μA I DSSSaturated drain current V DS =3V,V GS =0V 150 200 250 mA V GS(off)Gate to source cut-off voltage V DS =3V,I D =100μA -1.5 - -4.5 V gmTransconductance V DS =3V,I D =100mA 70 90 - mS G LPLinear Power Gain V DS =6V,I D =100mA,f=12GHz 7 9 - dB P1dB Output power at 1dB gain compression V DS =6V,I D =100mA,f=12GHz 21.8 23 - dBm *1:Channel to ambientMGF1801BT TYPICAL CHARACTERISTICS (Ta=25 C)© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.。