Electric Transport Properties of the p53 Gene and the Effects of Point Mutations
细胞生物学重点(重置版)
名词解释1.Lipid-anchored membrane proteins:脂锚定蛋白,又称脂连接蛋白。
通过共价键与脂分子相连,锚定于质膜外侧。
flux净流量(净通量):单位时间内通过膜的物质称通量。
由胞内向胞外为内向通量,由胞外向胞内为外向通量,两者之差为净通量。
3.Active transport:主动转运。
特异性载体蛋白介导的,需要消耗能量的逆浓度梯度或逆电势浓度梯度跨膜转运物质的过程。
4.Lipid Rafts:脂筏。
细胞膜上大小约70nm的胆固醇和鞘磷脂富集结构域,类似于蛋白质的组装平台,与蛋白质分装转运等功能密切相关。
5.P-class ion pump(P型离子泵):具两个独立的α催化亚基和ATP结合位点,绝大多数还有β调节亚基。
工作时α亚基利用ATP水解并发生磷酸化与去磷酸化,从而改变泵蛋白的构象,实现离子的跨膜转运。
包括钠钾泵、钙离子泵等。
6.V-class proton pump(V型质子泵):逆浓度梯度运转氢离子通过膜的膜整合糖蛋白,需ATP功能但不需磷酸化。
如溶酶体膜中的H+泵。
7.ABC(ATP-binding cassette) superfamily(ABC超家族):是ATP 驱动泵,跨膜蛋白在跨膜区组成跨膜通道,胞浆ATP结合区在酶的作用下水解ATP,实现底物跨膜转运,广泛存在于细菌和人,主要运输小分子。
8.MDR1:多药抗性转运蛋白1。
能利用ATP介导多种药物由胞内向胞外的转运。
9.Chemiosmosis (or Chemiosmotic coupling):化学渗透(化学渗透耦合),离子穿过半透膜的扩散现象,总体上由离子浓度高侧向离子浓度低侧流动。
典型例子如ATP的合成。
10.Nucleosomes:核小体,染色体的基本结构组成单位。
由4种组蛋白H2A、H2B、H3、H4各两个构成八聚体,外缠1.5圈147bpDNA,再与H1组成核小体,核小体与核小体之间由约60bpDNA连接。
LaBaMnO films produced by dip-coating on a quartz substrate
Journal of Alloys and Compounds465(2008)20–23LaBaMnOfilms produced by dip-coating on a quartz substrateH.Gencer a,M.Gunes a,A.Goktas b,Y.Babur b,H.I.Mutlu b,S.Atalay a,∗a Inonu University,Science and Arts Faculty,Department of Physics,Malatya,Turkeyb Harran University,Science and Arts Faculty,Department of Physics,SanliUrfa TurkeyReceived26September2007;received in revised form24October2007;accepted24October2007Available online4November2007AbstractThe electrical transport and magnetoresistance properties of the polycrystalline La0.67Ba0.33MnO3film produced on a quartz substrate were investigatedfirst time.X-ray powder diffraction indicated thatfilm sample has perovskite structure.Scanning electron microscope indicated that La0.67Ba0.33MnO3film thickness is approximately20m and the average grain size of this sample varies between8and100.67Ba0.33MnO3film showed a phase transition from paramagnetic to ferromagnetic at(T C)130K and a metal-insulator transition at(T MI)137K at2mT magnetic field.The upturn of the resistance observed at low temperatures(<49K)was attributed to the Coulomb blockade and the strong structural disorder due to the large lattice mismatch and strain relaxation.A large magnetoresistance ratio(MR(%))of230%was observed at125K and6T magnetic fields.©2007Elsevier B.V.All rights reserved.PACS:75.70.Ak;75.75.+a;75.70.−i;75.47.GkKeywords:Manganitefilms;Colossal magnetoresistance;Strain effect;Coulomb blockade1.IntroductionThe phenomenon of colossal magnetoresistance(CMR)in perovskite manganites of the type La1−x A x MnO3(A=Ca,Sr, Ba)has recently attracted considerable attention because of their value in fundamental physics and their potential applications [1–10].The physical properties of these perovskite manganites are mostly investigated in the form of the bulk[7],single crystal [8]and thin or thickfilm[9].The electronic and magnetic prop-erties offilm forms are of special interest than the other forms due to the large MR effect and potential technological useful-ness such as sensor and magnetic recording applications and also development of spin electronic devices[10].It has been dis-covered that these systems have a rich variety of electronic and magnetic phases from insulating antiferromagnetism to metallic ferromagnetism[11,12].The appearance of the ferromagnetic and metallic state in the mixed-valence perovskite systems is attributed to the double exchange(DE)model between the Mn3+ and Mn4+ions[13].It has been shown that the strength of DE ∗Corresponding author.Tel.:+904223410010.E-mail address:satalay@.tr(S.Atalay).interactions is very sensitive to variation of the Mn–O bond length,the Mn–O–Mn bond angle.The substitution of cations with different ionic sizes at A-site results in the structural dis-tortion in the Mn–O bond length and the Mn–O–Mn bond angle which affects the magnetic and transport property.Among the various La-based perovskite manganites, La1−x Ba x MnO3,especially the La0.67Ba0.33MnO3film form, are of great interest because of their Curie temperature which can reach up to360K[14].It is known from many reports that when the average size of the A-site ions increases,T C increases.Due to the rather large ionic radius of Ba2+(=1.47˚A) compared with Ca2+(=1.18˚A)and Sr2+(=1.31˚A),an increase in the average La site radius by partial substitution of Ba at La site is expected to lead to improvement in magnetotransport properties rather than Ca2+and Sr2+.Therefore,the properties of the La1−x Ba x MnO3can be different from other ones,and investigation of these compounds can bring new interesting results.The other important effect on the magnetotransport properties of thefilm systems is the structure of used substrate. It is generally known that substrate-induced strain plays an important role on Curie temperature(T C),metal-insulator transition temperature(T IM)and resistivity[15–17]for thefilm systems.In this study,La0.67Ba0.33MnO3film wasfirst time0925-8388/$–see front matter©2007Elsevier B.V.All rights reserved. doi:10.1016/j.jallcom.2007.10.110H.Gencer et al./Journal of Alloys and Compounds465(2008)20–2321prepared on a quartz substrate by dip-coating method.The magnetoresistance and the transport properties were discussed.2.ExperimentalThe polycrystallinefilm of La0.67Ba0.33MnO3manganite was prepared bysol–gel dip-coating method.First,stoichiometric amounts of Ba(OCH(CH3)2)2(%99.5),La(NO3)3·6H2O(%99.9)and Mn(NO3)2·XH2O(%99.9)were dissolved in glacial acetic acid in different beakers.Then these different homoge-nous solutions were mixed in the same beaker.We have added triethanolaminedrop by drop to get the homogeneous solution.And then accommodatingamounts of ethanol,methanol and ethanolamine were added for coordinateagents to produce absolute homogeneous transparent solution.The pH of thissolution has been measured to be4.77.After stirring the solution for42h,it wassubjected to slow evaporation at300K until the formation of a highly viscousresidual.Then the gel was coated on quartz by dip-coating with heat treatmentat873K.In thefilm fabricating process,quartz substrate withdrawn from thesolution with a velocity of15cm/min and then the sample was moved verticallyin furnace which has size of120cm along to moving direction and a temperaturegradient from a room temperature up to crystal formation temperature.Finally,the LaBaMnOfilm was annealed in air atmosphere at1073K for3h.The X-ray diffractograms were recorded with a Rigaku power diffractometerat room temperature using Cu K␣radiation.A LEO EVO40VP SEM systemattached to a R¨o ntec3000detector was used and microstructural analysis wascarried out on an energy-dispersive X-ray(EDX)system.The temperature andmagnetic-field dependence of the resistance were measured using a Q-3398(Cryogenic)system by the conventional four-probe method in the temperatureinterval from5to300K.3.Results and discussionsFig.1shows the X-ray diffraction pattern of the La0.67 Ba0.33MnO3film produced on a quartz substrate by dip-coating. As shown in Fig.1,only the diffraction lines for cubic perovskite were obtained.The hallow curve at low2θvalues rises due to sample holder.Fig.2shows typical SEM micrographs for the La0.67Ba0.33MnO3film.The SEM pictures show a polycrys-talline nature with afilm thickness of approximately20m and the average grain size varies between8and10m.The shapes of grown grains are very different than previously reported grain shapes for manganite type samples.The SEM pictures show a homogeneous structure with a leaf type grain structure.The temperature dependence of magnetization for the La0.67Ba0.33MnO3film sample,shown in Fig.3,was measured using a vibrating sample magnetometer system in awide Fig.1.X-ray diffraction patterns of the La0.67Ba0.33MnO3film produced on quartz substrate.range of temperatures(from5to300K)at various applied magneticfields.The Curie temperature(T C)offilm sample was determined to be130K,which is much lower than that of the bulk sample(360K for bulk sample[14]).Fig.4shows the temperature dependence of resistance for the La0.67Ba0.33MnO3film at2mT and5T magneticfields.It was observed that the resistance plot shows a peak corresponding to the metal-insulator transition temperature(T MI)and the applied magnetic field suppressed the resistance peaks significantly.The T MI was observed to be137K at2mT magneticfields.Several publications have reported that there are many factors could cause a considerable decrease in T C and T MI of manganitefilms compared with bulk samples[15–17].One of the important factors for the thinfilms is the substrate induced lattice strain rises from the lattice mismatch between substrate andfilms. For a quartz substrate it is well known that the lattice mismatch and consequently lattice strain is very high.But,it has been reported that the strength of the strain decreases with increasing film thickness[20].In this study,La0.67Ba0.33MnO3film was prepared on a quartz substrate.Thefilm thickness was measured to be approximately20m.For such a thickfilm,the lattice strain can be expected to be almost completely relaxed.It is known that this relaxation process could also producevarious Fig.2.SEM photographs of the La0.67Ba0.33MnO3film sample.22H.Gencer et al./Journal of Alloys and Compounds465(2008)20–23Fig.3.Temperature dependence of magnetization for La0.67Ba0.33MnO3film sample measured at various magneticfields.kinds of disorder such as stacking faults,dislocations,etc.As a result,the Curie temperature and metal-insulator transition temperature of the thickfilms could be strongly depressed in relation to that of the bulk compounds.If the amorphous structure of the quartz substrate used in ourfilm sample is considered,a much higher lattice strain is expected than single crystal substrates.Therefore,it was assumed that both the lattice-substrate mismatch and the strain relaxation effects could be affective in ourfilm sample.The low value of T C=130K and T MI=137K in ourfilm sample could be attributed to the strong structural disorder which weakening the ferromagnetic DE interaction induced by above-mentioned effects.When the temperature continues to further decrease an upturn of the resistance starts to develop below49K which is due to the formation of a reentrant insulating phase below49K(Fig.4).In many studies,this typical resistance behavior at low tempera-ture range has been attributed to Coulomb blockade(CB)effect [18–20]which is related to nanometric nature of the mangan-itefilms.In granular metals,it is well established that electrical conduction results from the transport of electrons or holes from charged to neutral grains.This process involves an electrostaticcharging energy(E C)can be written as E C=e2/4πε0εd whereeFig.4.Resistance variation of the La0.67Ba0.33MnO3film as a function of temperature at2mT and5T magneticfield.stands for the electronic charge,ε0andεare the permeability of the vacuum and the relative permeability and d is the grain diameter.Consequently,at low temperature and for small grains it is increasingly difficult to activate the transport process and the situation may evolve to a point in which transport could be effec-tively blocked.In this case an increase in the resistance,R(T), of the system should be observed at low temperatures where the electron localization effects take place.This constitutes the so-called Coulomb blockade,which result in an upturn in the low temperature resistance as in Fig.4.The average grain size in our sample varies between8and 10m.Due to the large grain size it is expected that Coulomb charging energy(E C)is very small.As a consequence,it could be concluded that the Coulomb charging energy is not enough to cause an upturn in resistance at low temperatures in ourfilm sample.But in some studies[18,19]it has been argued that the upturn of resistance at low temperature cannot restrict to the nanometric particles.There is a lot of evidence of the above-mentioned behavior is already present in thefilms which have large grain size andfilm thickness[18]and also in the bulk ceramics[19].The Coulomb charging energy E C depends not only on the grain size but also on the microstructure of the sys-tem.The strong structural disorder could increase the Coulomb charging energy E C,therefore,the structural disorder may be considered as another additional root of the reported upturn char-acter of the resistance.In our system,due to the strong lattice mismatch betweenfilm and substrate and large strain relaxation, we have expected large structural disorder.The very low values of T C and T MI are an evidence of this large disorder.The upturn character of the resistance at low temperature observed for our sample has been attributed the combine effect of the Coulomb blockade mechanism and strong structural disorder.The MR of La0.67Ba0.33MnO3film,defined as MR(%)= 100×[R(0)−R(H)]/R(H)where R(0)and R(H)are the resistance at zero and at H magneticfield,respectively,was measured as a function of the magneticfield up to6T at various temper-atures from5to200K.The results are shown in Fig.5.The La0.67Ba0.33MnO3film exhibited a colossal magnetoresistance with the MR ratio in excess of230%at125K and at6T magneticfields.Fig.5.MR ratio for the La0.67Ba0.33MnO3film at various temperatures.H.Gencer et al./Journal of Alloys and Compounds465(2008)20–23234.ConclusionThe electrical transport and magnetoresistance properties of the polycrystalline La0.67Ba0.33MnO3film produced on a quartz substrate werefirst time investigated.X-ray powder diffraction indicated thatfilm sample has perovskite structure. Scanning electron microscope indicated that La0.67Ba0.33MnO3film thickness is approximately20m and the average grain size of this sample varies between8and100.67Ba0.33MnO3film showed a phase transition from paramagnetic to ferromag-netic at(T C)130K and a metal-insulator transition at(T MI) 137K at2mT magneticfield.The upturn of the resistance observed at low temperatures(<49K)was attributed to the Coulomb blockade and the strong structural disorder due to the large lattice mismatch and strain relaxation.A large magnetore-sistance ratio(MR(%))of230%was observed at125K and6T magneticfields.AcknowledgementThis work was supported by TUBITAK with the project num-ber104T523.References[1]P.Schiffer,A.P.Ramirez,W.Bao,S.W.Cheng,Phys.Rev.Lett.75(1995)3336.[2]L.M.Rodriruez-Martinez,J.P.Attfield,Phys.Rev.B54(1996)15622.[3]H.Gencer,S.Atalay,H.I.Adiguzel,V.S.Kolat,Physica B357(2005)326.[4]V.Franco,J.S.Bl´a zquez,l´a n,J.M.Borrego,C.F.Conde,A.Conde,J.Appl.Phys.101(2007)09C503.[5]S.Atalay,V.S.Kolat,H.Gencer,H.I.Adiguzel,J.Magn.Magn.Mater.305(2006)452.[6]S.Atalay,H.Gencer,V.S.Kolat,J.Non-Cryst.Solids351(2005)2373.[7]H.Gencer,V.S.Kolat,S.Atalay,J.Alloys Comp.422(2006)40.[8]C.Kloc,S.W.Cheong,P.Matl,J.Cryst.Grow.191(1998)294.[9]M.Gunes,H.Gencer,V.S.Kolat,S.Vural,H.I.Mutlu,S.Atalay,Mater.Sci.Eng.B135(2007)41.[10]S.Jin,T.H.Tiefel,M.McCormack,R.A.Fastnacht,R.Ramesh,L.H.Chen,Science264(1994)413.[11]J.M.D.Coey,M.Viret,S.V on Molnar,Adv.Phys.48(1999)167.[12]iho,hderanta,J.Salminan,K.G.Lisunuv,V.S.Zakhvalinskii,Phys.Rev.B63(2001)94405.[13]C.Zenner,Phys.Rev.82(1951)403.[14]B.Raveau,C.Martin,A.Maignan,M.Hervieu,J.Phys.:Condens Mater.14(2002)1297.[15]J.Zhang,H.Tanaka,T.Kanki,J.H.Choi,T.Kawai,Phys.Rev.B64(2001)184404.[16]T.Kanki,H.Tanaka,T.Kawai,Phys.Rev.B70(2004)125109.[17]T.Y.Koo,S.H.Park,K.B.Lee,Y.H.Jeong,Appl.Phys.Lett.71(1997)977.[18]M.Garcia-Hernandez,J.L.Martinez,A.de Andres,C.Prieto,A.Munoz-Martin,E.Herrero,J.M.Alonso,L.Vazquez,J.Magn.Magn.Mater.196–197(1999)530.[19]M.Garcia-Hernandez,F.Guinea,A.de Andres,J.L.Martinez,C.Prieto,L.Vazquez,Phys.Rev.B61(2000)9549.[20]M.Sirena,L.Steren,J.Guimpel,Thin Solid Films373(2000)102.。
Electret properties of polypropylene fabrics
*Corresponding author.E-mail address:motyl @elektryk.ie.pwr.wroc.pl (E.Motyl).Journal of Electrostatics 51}52(2001)232}238Electret properties of polypropylene fabricsBoz ena |owkis,Edmund Motyl *Institute of Electrical Engineering Fundamentals (I }7),Wroc !aw Uni v ersity of Technology,Wybrzez e Wyspian &skiego 27,50-370Wroc !aw,PolandAbstractResults of investigations on electret properties of polypropylene (PP)fabrics formed by high voltage corona are presented here.The equivalent voltage of samples was measured in function of temperature that was increasing linearly in time.The half decay temperature and lifetime of stored charges were estimated.The "ltration index of PP fabrics in function of surface charge was investigated.The pictures of the structure of PP fabrics using scanning electron microscope were also shown. 2001Elsevier Science B.V.All rights reserved.Keywords:Polypropylene;Fabrics;Electret "lter;Lifetime;Filtration index1.IntroductionWide investigation on applications of electrets to aerosol "lters was done by van Turnhout [1}4].The electrical forces attracting the aerosol particles as well as mechanical forces condition work of such kind of "lters.The charged particles are drifting in the electric "eld generated by electret "bres.The neutral particles are polarized and move in gradient of the electric "eld.Both kinds of forces are very e !ective.Considerable large diameter of "bres gives low gradient of pressure along the "lter,and high "lter e $ciency is maintained.The fact that submicron particles can be easily catched is advantageous for electret "lters in comparison to mechanical con-structions in which "ne nets with submicron meshes have to be used.The e !ective "ltration of the submicron particles is of great importance,because such kind of particles constitute a threat against health.Although electret "lters are produced in a large way,new realizations are searched for improvements in collecting dust particles.0304-3886/01/$-see front matter 2001Elsevier Science B.V.All rights reserved.PII:S 0304-3886(01)00053-5Fig.1.Surface of P1fabric,magni "cation ;250.In this paper,the results of investigations with two kinds of PP fabrics (MALEN PF-401),P1and P2are presented.Fabrics were formed with corona from high voltage string electrode under potential #25kV.The lifetimes of formed fabrics were esti-mated and compared using the thermally stimulated equivalent voltage character-istics.An attempt was made to obtain a relation between the equivalent surface charge q and the "ltration index K .The results were complemented by observation of fabrics in scanning electron microscopy.2.SamplesRectangular samples (10cm ;10cm)were cut from randomly selected places of electret fabrics P1and P2.The surface equivalent charge q at samples is nonuniform.The positive equivalent charges q from 100to 1600pC/cm were measured on the side faced to the charging positive corona electrode in P1samples.Negative equiva-lent charges q from !2500to !750pC/cm were observed from the opposite sides.Samples selected from P2fabric have also nonuniform surface charge distribution with the negative equivalent charges q from !1000to !100pC/cm at both surfa-ces.Investigated fabrics have chaotically distributed "bres.Fibres of P2fabric are thinner in comparison to P1,which makes the fabric more nappy.Microscopic pictures of surface and cross-section of P1fabric are shown in Figs.1and 2.Diameters of "bres are between 3and 20 m.Thicknesses of fabrics were estimated as 1and1.6mm for P1and P2,respectively.B.%owkis,E.Motyl /Journal of Electrostatics 51}52(2001)232}238233Fig.2.Cross-section of P1fabric,magni"cation;650.3.Results3.1.In v estigation of PP fabrics lifetimesThermally stimulated equivalent surface voltages were measured at linear heatingrate b"2K/min in a temperature range from293to390K.Temperature runs ofequivalent voltages; (¹)are shown in Figs.3and4,respectively for fabrics P1 and P2.Decay of homocharge,during thermally stimulated discharge at linear rate can beapproximated according to the following equation[5]:q2 R(¹) q exp !k¹ b= exp !=k¹ ,(1) where q is the initial equivalent surface homocharge density,=is the activation energy,k is the Boltzmann constant, is a preexponential factor in relaxation time and¹is temperature.At temperature¹ ,the thermally stimulated run of q2 R (¹)has a bending point,which can be used to calculate activation energy,using the equation="!k¹q (¹ )d q2 R(t)d¹ 2 2 .(2)The lifetime at temperature¹was estimated from(¹)+k¹b=exp=k1¹!1¹,(3)234 B.%owkis,E.Motyl/Journal of Electrostatics51}52(2001)232}238Fig.3.Temperature run of equivalent voltage for P1electretfabric.Fig.4.Temperature run of equivalent voltage for P2electret fabric.Table 1Activation energies and lifetimes at 293K of two kinds of PP fabrics P1and P2Kind of fabric¹ (K); (V)=(eV) (s) (yrs)P1376390 2.03 4.2;10 1.3P2377465 2.168.36;10 2.7where,at ¹ the surface equivalent charge equals q /e and e "2.7182is the radix of natural logarithm.The calculated values of activation energies and lifetimes at 293K for two kinds of PP fabrics P1and P2are shown in Table 1.Results are averages from eight measurements.As it can be seen from Table 1,the lifetime for P2fabric is considerably longer than for P1fabric.3.2.E w ect of humidity on electret properties of x ltering fabricsFiltering fabrics change their properties in environmental surroundings.High humidity a !ects the value of equivalent surface charges.It can be seen from Fig.5forB.%owkis,E.Motyl /Journal of Electrostatics 51}52(2001)232}238235Fig.5.Decay of equivalent surface charge in humid atmosphere and its recovery after the samples P1were exposed to atmospheric conditions.1,2,3:three di !erentspecimens.Fig.6.Decay of equivalent surface charge in humid atmosphere and its recovery after the P2samples were exposed to atmospheric conditions.1,2,3:three di !erent specimens.negative charged samples.The P1fabrics were placed in a high humidity chamber (100%)and surface equivalent voltage was measured.Equivalent voltage decays slowly in time of storage in the chamber.After 14days samples were taken out of the humidity chamber and remained at atmospheric conditions.After that the partial recovery of equivalent voltage was observed.Similar behaviour has been observed for P2fabric samples (Fig.6).In case of P2samples,the voltage decays more slowly (14%)than in case of P1samples (30%).3.3.Filtration indexThe "ltration index was measured with the use of aerosol particles of sodium chloride.The photometric method of measurement was applied.Solid particles of sodium chloride were obtained from dispersed solution of NaCl by evaporation of236 B.%owkis,E.Motyl /Journal of Electrostatics 51}52(2001)232}238water using compressed air.A stream of aerosol particles NaCl is burned to a cinder in a hydrogen #ame.The fumes are conducted through a PP fabric electret sample.The intensity of yellow fumes was measured behind and before fabric sample.The "ltra-tion index was calculated according to the relationK "I !I I !I100%,(4)where I is the self-indication of the photometer (mV),I is the indication of the photometer that corresponds to the aerosol concentration input of the sample (mV)and I is the indication of the photometer that corresponds to the aerosol concentra-tion behind the sample (mV).It was found that "ltration index for P1samples changes from 4%to 7%and practically does not depend on surface charge of the sample.The "ltration index is lower than 2%in case of P2fabric.4.ConclusionsThe average value of equivalent surface charge density is not related to the "ltration index.However,it cannot be concluded that charges have no in #uence on the "ltration process.Filtration e $ciency depends on local "elds between charged "bres.Higher e $ciency of P2fabric in comparison to P1is probably connected not only with electrostatic charges,but with lower diameter of "bres,higher nappiness of the P2fabric and its greater thickness.Fibres with lower diameters have greater surfaces for dust collecting.Electrical "eld is higher with higher gradient,which favours the catching of the noncharged particles.The charge storage in humid atmosphere depends on fabric structure.The nappy materials are more humidity resistant,but recovery of charge after removal of the sample to normal atmospheric condition is slower.The presented results are consistent with those published by van Turnhout [6],who was pioneering in construction of new generation of electret "lters using thin "bres.The lifetime of PP electret charges depends on the kind of woven and is above two times longer for P2in comparison to P1.AcknowledgementsThis work was carried out as a statutory project supported by the State Committee for Scienti "c Research (KBN),Warsaw,Poland.References[1]J.van Turnhout,C.Van Bachove,J.van Veldhuizen,Electret "bres for high-e $ciency "ltration ofpolluted gases,Sonderdruck aus Staub-Reinhaltung der Luft 36(1)(1976)36}39.B.%owkis,E.Motyl /Journal of Electrostatics 51}52(2001)232}238237238 B.%owkis,E.Motyl/Journal of Electrostatics51}52(2001)232}238[2]J.van Turnhout,J.H.M.Albers,W.J.Hoeneveld,J.W.C.Adams,L.M.van Rossen,Non-wovenelectret"bre:a new"ltering medium of high e$ciency,Proc.5th Int.Conf.on Static Electri"cation, London,1979,Inst.Phys.Conf.Ser.,No.48,1979,pp.337}349.[3]P.H.de Haan,J.van Turnhout,K.E.D.Wapenaar,IEEE Trans.Electrical Insul.EI-21(1986)465}472.[4]J.van Turnhout,P.J.Droppert,M.Wubbenhorst,PP-based blends for electret"lters-an appraisal,VIII International Symposium of Electrets,Paris,7}9September1994,pp.961}966.[5]J.van Turnhout,P.H.Ong,Proceedings of the International Conference on the Investigation of SolidDielectrics and Methods of their Testing,Wroc"aw,1977,pp.133}140.[6]J.van Turnhout,W.J.Hoeneveld,J.W.C.Adams,M.van Rossen,IEEE Trans.Ind.Appl.IA-17(1981)240}248.。
无机功能材料电子—声子及声子—声子耦合的计算机模拟研究
谨以此文献给关爱我的家人与朋友论文提要晶格动力学是现代固体物理的基础之一。
晶体中的原子在热激发下,不断地在平衡位置附近振动。
这些由原子集体振动所产生的声子可以与许多激发态发生耦合,其中最主要的耦合是:电子-声子和声子-声子耦合。
它们决定了材料中与电子和声子输运相关的许多物理性质,比如金属的电导率、超导电性和热导率等。
本论文选取高压下氢化物和铁基方钴矿热电材料作为研究电子-声子和声子-声子耦合的对象,采用基于密度泛函理论的第一性原理从头算方法,进行了系统性的输运性质研究,获得如下创新性成果:1. 高压下预测的两个富氢磷族化合物(AsH8和SbH4)的超导转变温度都超过了100K;发现了二元氢化物高压性质的一般化学趋势。
系统探索了磷族氢化物的高压相图,发现所有的磷氢化物高压下都倾向于分解,砷氢和锑氢化物中发现存在两个稳定的富氢化合物(AsH8和SbH4)。
AsH8和SbH4的超导转变温度(T c)都超过100K。
特别是SbH4具有最高的能量稳定性,其合成压力只有150GPa。
通过对已探索的二元氢化物的理论数据挖掘,我们发现了氢化物高压性质的一般化学趋势,其高压下的热力学稳定性、成键特征和电声耦合等性质与组成元素在常压下的电负性差存在紧密的联系。
该研究工作为寻找稳定的固态氢化物以及探索高温超导电性提供了有价值的理论指导。
2. 发现了二元未填方钴矿材料FeSb3具有超低的本征晶格热导率,改变了人们在方钴矿体系中对热输运规律的传统认识。
室温下,FeSb3的晶格热导率只有1.14W/mK,是同类材料CoSb3的十分之一。
填充原子并未导致FeSb3的晶格热导率的降低,这改变了人们在方钴矿体系中的传统认识(填充原子会显著地降低方钴矿材料的晶格热导率)。
FeSb3中的超低晶格热导率主要来自于整个声子谱的软化,尤其是与结构中Sb-Sb共价键关联的低频光学支声子的软化相关。
3. 发现高电负性元素填充的方钴矿SnFe4Sb12具有超低的本征晶格热导率,为优化方钴矿材料的热电性能提供了新的途径。
材料科学(10)12章-Electrical-Properties
Conduction & Electron Transport
• Metals (Conductors):
-- for metals, empty energy states are adjacent to filled states.
• thermal energy excites electrons into empty higher energy states.
Resistance (电阻), Resistivity (电阻率)
Resistance, R, depends on the intrinsic resistivity r of the material [W-m] and on the geometry (length L and area A through which the current passes): R = r L/A
filled band
The outmost band largely determines the electron band structures in solids (group of atoms bonding to each other)
Cu
filled band
Mg
In a metal, n is large. In an insulator, n is very, very small.
Classification of Materials
based on their electrical conductivity
Electrical conductivity varies between different materials by over 27 orders of magnitude, the greatest variation of any physical property.
电力专业英语翻译(第二版)
A decrease in the field current gives rise to lagging (inductive) current in the stator; and increase in the field current that overexcites the motor causes a leading (capacitive) current to appear in the stator.励磁电流减小时,定子电流感性增强;励磁电流增加使电机过励时将在定子中产生容性电流。
An induction machine is an AC two-winding unit in which only one (primary, usually the stator) winding is supplied with an alternating current at a constant frequency ω1 from an external source.感应电机是一种具有双绕组的交流电气设备,它只有一个绕组(一次侧,通常是定子)通过外电源输入固定频率为ω1的交变电流。
Current transformers for protection are essentially similar to those used for the operation of ammeters, watthourmeters and other instruments.保护用电流互感器基本上同操作用的电流表、电能表和其他仪器类似。
DG planning also involves arranging for connection of the renewable power generator with the local grid, and for support of any local electric load when the renewable source is not available.分布式发电规划还包括安排可再生能源发电机与地方电网相连接,这样当可再生能源不可用时,本地电力负荷仍能得到支持。
AgBi3S5三元硫化物的合成和输运性质
目前提高热电材料热电性能的主要方法有以下几种:
(1) 通过低维化改善热电材料的输运性能, 如将该材料做成量 子阱超晶格、在微孔中平行生长量子线、量子点等;
(2) 通过掺杂修饰材料的能带结构,使材料的带隙和费米能 级附近的状态密度增大;
(3) 通过梯度化扩大热电材料的使用温区,提高热电输出功 率;
主要研究方法和手段
目前制备半导体热电材料的方法日趋成熟,主要包括:熔体生长 法、粉末冶金法、气相生长法( 包括物理气相沉积、化学气相沉积 、分子束外延法等) 、化学法、电化学法、水热合成法、机械合金 化法( MA 法) 、热压法、放电等离子烧结法等。
Experimental procedure
Raw materials: high-purity powders of Ag(99.9%),Bi(99.9%) and S(99.5%)
相结构
The Rietveld method
• Materials Studio(MS) software
相含量
the 2θ angular range of 10-95︒ with a step size of 0.02 ︒and speed for 1︒per minute
Metallographic phase was observed by using an Olympus PME-3 opt ical microscopy after grounding with SiC papers and polishing with diamond paste of 1.5 mm. The morphologies of fractographs and ene rgy dispersive spectrum (EDS) of bulks were investigated by using a field emission scanning electron microscopy (FESEM; SUPRA 55, C arl Zeiss, Nakano, Japan). The electrical transport properties were ev aluated along the sample section perpendicular to the pressing directi on of SPS. The electrical conductivity (σ) and Seebeck coefficient () were measured at 323-573K in a helium atmosphere using a Seebeck coefficient/electric resistance measuring system (ZEM-2, Ulvac-Rik o, Japan). A sample along the section parallel to the pressing directio n of SPS was used to evaluate the thermal conductivity κ because of the limited sample size. The thermal conductivity (κ) was calculated by the relationship of κ=DCpρwith the specific heat Cp measured by a differential scanning calorimeter (SHIMAZDU DSC-60, Japan), density measured by the Archimedes method and the thermal diffusivity D measured by a laser flash method (NETZSCH Laser Flash Apparatus LFA427, Germany).
单分子综述-NATURE NANOTECHNOLOGY-Single-molecule junctions beyond electronic transport-2013
Stimulated by the initial proposal that molecules could be used as the functional building blocks in electronic devices 1, researchers around the world have been probing transport phenomena at the single-molecule level both experimentally and theoretically 2–11. Recent experimental advances include the demonstration of conductance switching 12–16, rectification 17–21, and illustrations on how quantum interference effects 22–26 play a critical role in the electronic properties of single metal–molecule–metal junctions. The focus of these experiments has been to both provide a fundamental understanding of transport phenomena in nanoscale devices as well as to demonstrate the engineering of functionality from rational chemical design in single-molecule junctions. Although so far there are no ‘molecular electronics’ devices manufactured commercially, basic research in this area has advanced significantly. Specifically, the drive to create functional molecular devices has pushed the frontiers of both measurement capabilities and our fundamental understanding of varied physi-cal phenomena at the single-molecule level, including mechan-ics, thermoelectrics, optoelectronics and spintronics in addition to electronic transport characterizations. Metal–molecule–metal junctions thus represent a powerful template for understanding and controlling these physical and chemical properties at the atomic- and molecular-length scales. I n this realm, molecular devices have atomically defined precision that is beyond what is achievable at present with quantum dots. Combined with the vast toolkit afforded by rational molecular design 27, these techniques hold a significant promise towards the development of actual devices that can transduce a variety of physical stimuli, beyond their proposed utility as electronic elements 28.n this Review we discuss recent measurements of physi-cal properties of single metal–molecule–metal junctions that go beyond electronic transport characterizations (Fig. 1). We present insights into experimental investigations of single-molecule junc-tions under different stimuli: mechanical force, optical illumina-tion and thermal gradients. We then review recent progress in spin- and quantum interference-based phenomena in molecular devices. I n what follows, we discuss the emerging experimentalSingle-molecule junctions beyond electronic transportSriharsha V. Aradhya and Latha Venkataraman*The id ea of using ind ivid ual molecules as active electronic components provid ed the impetus to d evelop a variety of experimental platforms to probe their electronic transport properties. Among these, single-molecule junctions in a metal–molecule–metal motif have contributed significantly to our fundamental understanding of the principles required to realize molecular-scale electronic components from resistive wires to reversible switches. The success of these techniques and the growing interest of other disciplines in single-molecule-level characterization are prompting new approaches to investigate metal–molecule–metal junctions with multiple probes. Going beyond electronic transport characterization, these new studies are highlighting both the fundamental and applied aspects of mechanical, optical and thermoelectric properties at the atomic and molecular scales. Furthermore, experimental demonstrations of quantum interference and manipulation of electronic and nuclear spins in single-molecule circuits are heralding new device concepts with no classical analogues. In this Review, we present the emerging methods being used to interrogate multiple properties in single molecule-based devices, detail how these measurements have advanced our understanding of the structure–function relationships in molecular junctions, and discuss the potential for future research and applications.methods, focusing on the scientific significance of investigations enabled by these methods, and their potential for future scientific and technological progress. The details and comparisons of the dif-ferent experimental platforms used for electronic transport char-acterization of single-molecule junctions can be found in ref. 29. Together, these varied investigations underscore the importance of single-molecule junctions in current and future research aimed at understanding and controlling a variety of physical interactions at the atomic- and molecular-length scale.Structure–function correlations using mechanicsMeasurements of electronic properties of nanoscale and molecu-lar junctions do not, in general, provide direct structural informa-tion about the junction. Direct imaging with atomic resolution as demonstrated by Ohnishi et al.30 for monoatomic Au wires can be used to correlate structure with electronic properties, however this has not proved feasible for investigating metal–molecule–metal junctions in which carbon-based organic molecules are used. Simultaneous mechanical and electronic measurements provide an alternate method to address questions relating to the struc-ture of atomic-size junctions 31. Specifically, the measurements of forces across single metal–molecule–metal junctions and of metal point contacts provide independent mechanical information, which can be used to: (1) relate junction structure to conduct-ance, (2) quantify bonding at the molecular scale, and (3) provide a mechanical ‘knob’ that can be used to control transport through nanoscale devices. The first simultaneous measurements of force and conductance in nanoscale junctions were carried out for Au point contacts by Rubio et al.32, where it was shown that the force data was unambiguously correlated to the quantized changes in conductance. Using a conducting atomic force microscope (AFM) set-up, Tao and coworkers 33 demonstrated simultaneous force and conductance measurements on Au metal–molecule–metal junc-tions; these experiments were performed at room temperature in a solution of molecules, analogous to the scanning tunnelling microscope (STM)-based break-junction scheme 8 that has now been widely adopted to perform conductance measurements.Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA. *e-mail: lv2117@DOI: 10.1038/NNANO.2013.91These initial experiments relied on the so-called static mode of AFM-based force spectroscopy, where the force on the canti-lever is monitored as a function of junction elongation. I n this method the deflection of the AFM cantilever is directly related to the force on the junction by Hooke’s law (force = cantilever stiff-ness × cantilever deflection). Concurrently, advances in dynamic force spectroscopy — particularly the introduction of the ‘q-Plus’ configuration 34 that utilizes a very stiff tuning fork as a force sen-sor — are enabling high-resolution measurements of atomic-size junctions. In this technique, the frequency shift of an AFM cantilever under forced near-resonance oscillation is measuredas a function of junction elongation. This frequency shift can be related to the gradient of the tip–sample force. The underlying advantage of this approach is that frequency-domain measure-ments of high-Q resonators is significantly easier to carry out with high precision. However, in contrast to the static mode, recover-ing the junction force from frequency shifts — especially in the presence of dissipation and dynamic structural changes during junction elongation experiments — is non-trivial and a detailed understanding remains to be developed 35.The most basic information that can be determined throughsimultaneous measurement of force and conductance in metalThermoelectricsSpintronics andMechanicsOptoelectronicsHotColdFigure 1 | Probing multiple properties of single-molecule junctions. phenomena in addition to demonstrations of quantum mechanical spin- and interference-dependent transport concepts for which there are no analogues in conventional electronics.contacts is the relation between the measured current and force. An experimental study by Ternes et al.36 attempted to resolve a long-standing theoretical prediction 37 that indicated that both the tunnelling current and force between two atomic-scale metal contacts scale similarly with distance (recently revisited by Jelinek et al.38). Using the dynamic force microscopy technique, Ternes et al. effectively probed the interplay between short-range forces and conductance under ultrahigh-vacuum conditions at liquid helium temperatures. As illustrated in Fig. 2a, the tunnel-ling current through the gap between the metallic AFM probe and the substrate, and the force on the cantilever were recorded, and both were found to decay exponentially with increasing distance with nearly the same decay constant. Although an exponential decay in current with distance is easily explained by considering an orbital overlap of the tip and sample wavefunctions through a tunnel barrier using Simmons’ model 39, the exponential decay in the short-range forces indicated that perhaps the same orbital controlled the interatomic short-range forces (Fig. 2b).Using such dynamic force microscopy techniques, research-ers have also studied, under ultrahigh-vacuum conditions, forces and conductance across junctions with diatomic adsorbates such as CO (refs 40,41) and more recently with fullerenes 42, address-ing the interplay between electronic transport, binding ener-getics and structural evolution. I n one such experiment, Tautz and coworkers 43 have demonstrated simultaneous conduct-ance and stiffness measurements during the lifting of a PTCDA (3,4,9,10-perylene-tetracarboxylicacid-dianhydride) molecule from a Ag(111) substrate using the dynamic mode method with an Ag-covered tungsten AFM tip. The authors were able to follow the lifting process (Fig. 2c,d) monitoring the junction stiffness as the molecule was peeled off the surface to yield a vertically bound molecule, which could also be characterized electronically to determine the conductance through the vertical metal–molecule–metal junction with an idealized geometry. These measurements were supported by force field-based model calculations (Fig. 2c and dashed black line in Fig. 2d), presenting a way to correlate local geometry to the electronic transport.Extending the work from metal point contacts, ambient meas-urements of force and conductance across single-molecule junc-tions have been carried out using the static AFM mode 33. These measurements allow correlation of the bond rupture forces with the chemistry of the linker group and molecular backbone. Single-molecule junctions are formed between a Au-metal sub-strate and a Au-coated cantilever in an environment of molecules. Measurements of current through the junction under an applied bias determine conductance, while simultaneous measurements of cantilever deflection relate to the force applied across the junction as shown in Fig. 2e. Although measurements of current throughzF zyxCantileverIVabConductance G (G 0)1 2 3Tip–sample distance d (Å)S h o r t -r a n g e f o r c e F z (n N )10−310−210−11110−110−210−3e10−410−210C o n d u c t a n c e (G 0)Displacement86420Force (nN)0.5 nm420−2F o r c e (n N )−0.4−0.200.20.4Displacement (nm)SSfIncreasing rupture forcegc(iv)(i)(iii)(ii)Low HighCounts d9630−3d F /d z (n N n m −1)(i)(iv)(iii)(ii)A p p r o a chL i ft i n g110−210−4G (2e 2/h )2051510z (Å)H 2NNH 2H 2NNH 2NNFigure 2 | Simultaneous measurements of electronic transport and mechanics. a , A conducting AFM set-up with a stiff probe (shown schematically) enabled the atomic-resolution imaging of a Pt adsorbate on a Pt(111) surface (tan colour topography), before the simultaneous measurement of interatomic forces and currents. F z , short-range force. b , Semilogarithmic plot of tunnelling conductance and F z measured over the Pt atom. A similar decay constant for current and force as a function of interatomic distance is seen. The blue dashed lines are exponential fits to the data. c , Structural snapshots showing a molecular mechanics simulation of a PTCDA molecule held between a Ag substrate and tip (read right to left). It shows the evolution of the Ag–PTCDA–Ag molecular junction as a function of tip–surface distance. d , Upper panel shows experimental stiffness (d F /d z ) measurements during the lifting process performed with a conducting AFM. The calculated values from the simulation are overlaid (dashed black line). Lower panel shows simultaneously measured conductance (G ). e , Simultaneously measured conductance (red) and force (blue) measurements showing evolution of a molecular junction as a function of junction elongation. A Au point contact is first formed, followed by the formation of a single-molecule junction, which then ruptures on further elongation. f , A two-dimensional histogram of thousands of single-molecule junctionrupture events (for 1,4-bis(methyl sulphide) butane; inset), constructed by redefining the rupture location as the zero displacement point. The most frequently measured rupture force is the drop in force (shown by the double-headed arrow) at the rupture location in the statistically averaged force trace (overlaid black curve). g , Beyond the expected dependence on the terminal group, the rupture force is also sensitive to the molecular backbone, highlighting the interplay between chemical structure and mechanics. In the case of nitrogen-terminated molecules, rupture force increases fromaromatic amines to aliphatic amines and the highest rupture force is for molecules with pyridyl moieties. Figure reproduced with permission from: a ,b , ref. 36, © 2011 APS; c ,d , ref. 43, © 2011 APS.DOI: 10.1038/NNANO.2013.91such junctions are easily accomplished using standard instru-mentation, measurements of forces with high resolution are not straightforward. This is because a rather stiff cantilever (with a typical spring constant of ~50 N m−1) is typically required to break the Au point contact that is first formed between the tip and sub-strate, before the molecular junctions are created. The force reso-lution is then limited by the smallest deflection of the cantilever that can be measured. With a custom-designed system24 our group has achieved a cantilever displacement resolution of ~2 pm (com-pare with Au atomic diameter of ~280 pm) using an optical detec-tion scheme, allowing the force noise floor of the AFM set-up to be as low as 0.1 nN even with these stiff cantilevers (Fig. 2e). With this system, and a novel analysis technique using two-dimensional force–displacement histograms as illustrated in Fig. 2f, we have been able to systematically probe the influence of the chemical linker group44,45 and the molecular backbone46 on single-molecule junction rupture force as illustrated in Fig. 2g.Significant future opportunities with force measurements exist for investigations that go beyond characterizations of the junc-tion rupture force. In two independent reports, one by our group47 and another by Wagner et al.48, force measurements were used to quantitatively measure the contribution of van der Waals interac-tions at the single-molecule level. Wagner et al. used the stiffness data from the lifting of PTCDA molecules on a Au(111) surface, and fitted it to the stiffness calculated from model potentials to estimate the contribution of the various interactions between the molecule and the surface48. By measuring force and conductance across single 4,4’-bipyridine molecules attached to Au electrodes, we were able to directly quantify the contribution of van der Waals interactions to single-molecule-junction stiffness and rupture force47. These experimental measurements can help benchmark the several theoretical frameworks currently under development aiming to reliably capture van der Waals interactions at metal/ organic interfaces due to their importance in diverse areas includ-ing catalysis, electronic devices and self-assembly.In most of the experiments mentioned thus far, the measured forces were typically used as a secondary probe of junction prop-erties, instead relying on the junction conductance as the primary signature for the formation of the junction. However, as is the case in large biological molecules49, forces measured across single-mol-ecule junctions can also provide the primary signature, thereby making it possible to characterize non-conducting molecules that nonetheless do form junctions. Furthermore, molecules pos-sess many internal degrees of motion (including vibrations and rotations) that can directly influence the electronic transport50, and the measurement of forces with such molecules can open up new avenues for mechanochemistry51. This potential of using force measurements to elucidate the fundamentals of electronic transport and binding interactions at the single-molecule level is prompting new activity in this area of research52–54. Optoelectronics and optical spectroscopyAddressing optical properties and understanding their influence on electronic transport in individual molecular-scale devices, col-lectively referred to as ‘molecular optoelectronics’, is an area with potentially important applications55. However, the fundamental mismatch between the optical (typically, approximately at the micrometre scale) and molecular-length scales has historically presented a barrier to experimental investigations. The motiva-tions for single-molecule optoelectronic studies are twofold: first, optical spectroscopies (especially Raman spectroscopy) could lead to a significantly better characterization of the local junction structure. The nanostructured metallic electrodes used to real-ize single-molecule junctions are coincidentally some of the best candidates for local field enhancement due to plasmons (coupled excitations of surface electrons and incident photons). This there-fore provides an excellent opportunity for understanding the interaction of plasmons with molecules at the nanoscale. Second, controlling the electronic transport properties using light as an external stimulus has long been sought as an attractive alternative to a molecular-scale field-effect transistor.Two independent groups have recently demonstrated simulta-neous optical and electrical measurements on molecular junctions with the aim of providing structural information using an optical probe. First, Ward et al.56 used Au nanogaps formed by electromi-gration57 to create molecular junctions with a few molecules. They then irradiated these junctions with a laser operating at a wavelength that is close to the plasmon resonance of these Au nanogaps to observe a Raman signal attributable to the molecules58 (Fig. 3a). As shown in Fig. 3b, they observed correlations between the intensity of the Raman features and magnitude of the junction conductance, providing direct evidence that Raman signatures could be used to identify junction structures. They later extended this experimental approach to estimate vibrational and electronic heating in molecu-lar junctions59. For this work, they measured the ratio of the Raman Stokes and anti-Stokes intensities, which were then related to the junction temperature as a function of the applied bias voltage. They found that the anti-Stokes intensity changed with bias voltage while the Stokes intensity remained constant, indicating that the effective temperature of the Raman-active mode was affected by passing cur-rent through the junction60. Interestingly, Ward et al. found that the vibrational mode temperatures exceeded several hundred kelvin, whereas earlier work by Tao and co-workers, who used models for junction rupture derived from biomolecule research, had indicated a much smaller value (~10 K) for electronic heating61. Whether this high temperature determined from the ratio of the anti-Stokes to Stokes intensities indicates that the electronic temperature is also similarly elevated is still being debated55, however, one can definitely conclude that such measurements under a high bias (few hundred millivolts) are clearly in a non-equilibrium transport regime, and much more research needs to be performed to understand the details of electronic heating.Concurrently, Liu et al.62 used the STM-based break-junction technique8 and combined this with Raman spectroscopy to per-form simultaneous conductance and Raman measurements on single-molecule junctions formed between a Au STM tip and a Au(111) substrate. They coupled a laser to a molecular junction as shown in Fig. 3c with a 4,4’-bipyridine molecule bridging the STM tip (top) and the substrate (bottom). Pyridines show clear surface-enhanced Raman signatures on metal58, and 4,4’-bipy-ridine is known to form single-molecule junctions in the STM break-junction set-up8,15. Similar to the study of Ward et al.56, Liu et al.62 found that conducting molecular junctions had a Raman signature that was distinct from the broken molecu-lar junctions. Furthermore, the authors studied the spectra of 4,4’-bipyridine at different bias voltages, ranging from 10 to 800 mV, and reported a reversible splitting of the 1,609 cm–1 peak (Fig. 3d). Because this Raman signature is due to a ring-stretching mode, they interpreted this splitting as arising from the break-ing of the degeneracy between the rings connected to the source and drain electrodes at high biases (Fig. 3c). Innovative experi-ments such as these have demonstrated that there is new physics to be learned through optical probing of molecular junctions, and are initiating further interest in understanding the effect of local structure and vibrational effects on electronic transport63. Experiments that probe electroluminescence — photon emis-sion induced by a tunnelling current — in these types of molec-ular junction can also offer insight into structure–conductance correlations. Ho and co-workers have demonstrated simultaneous measurement of differential conductance and photon emissionDOI: 10.1038/NNANO.2013.91from individual molecules at a submolecular-length scale using an STM 64,65. Instead of depositing molecules directly on a metal sur-face, they used an insulating layer to decouple the molecule from the metal 64,65 (Fig. 3e). This critical factor, combined with the vac-uum gap with the STM tip, ensures that the metal electrodes do not quench the radiated photons, and therefore the emitted photons carry molecular fingerprints. Indeed, the experimental observation of molecular electroluminescence of C 60 monolayers on Au(110) by Berndt et al.66 was later attributed to plasmon-mediated emission of the metallic electrodes, indirectly modulated by the molecule 67. The challenge of finding the correct insulator–molecule combination and performing the experiments at low temperature makes electro-luminescence relatively uncommon compared with the numerous Raman studies; however, progress is being made on both theoretical and experimental fronts to understand and exploit emission pro-cesses in single-molecule junctions 68.Beyond measurements of the Raman spectra of molecular junctions, light could be used to control transport in junctions formed with photochromic molecular backbones that occur in two (or more) stable and optically accessible states. Some common examples include azobenzene derivatives, which occur in a cis or trans form, as well as diarylene compounds that can be switched between a conducting conjugated form and a non-conducting cross-conjugated form 69. Experiments probing the conductance changes in molecular devices formed with such compounds have been reviewed in depth elsewhere 70,71. However, in the single-mol-ecule context, there are relatively few examples of optical modula-tion of conductance. To a large extent, this is due to the fact that although many molecular systems are known to switch reliably in solution, contact to metallic electrodes can dramatically alter switching properties, presenting a significant challenge to experi-ments at the single-molecule level.Two recent experiments have attempted to overcome this chal-lenge and have probed conductance changes in single-molecule junctions while simultaneously illuminating the junctions with visible light 72,73. Battacharyya et al.72 used a porphyrin-C 60 ‘dyad’ molecule deposited on an indium tin oxide (I TO) substrate to demonstrate the light-induced creation of an excited-state mol-ecule with a different conductance. The unconventional transpar-ent ITO electrode was chosen to provide optical access while also acting as a conducting electrode. The porphyrin segment of the molecule was the chromophore, whereas the C 60 segment served as the electron acceptor. The authors found, surprisingly, that the charge-separated molecule had a much longer lifetime on ITO than in solution. I n the break-junction experiments, the illuminated junctions showed a conductance feature that was absent without1 μm Raman shift (cm –1)1,609 cm –1(–)Source 1,609 cm–1Drain (+)Low voltage High voltageMgPNiAl(110)STM tip (Ag)VacuumThin alumina 1.4 1.5 1.6 1.701020 3040200400Photon energy (eV)3.00 V 2.90 V 2.80 V 2.70 V 2.60 V2.55 V 2.50 VP h o t o n c o u n t s (a .u .)888 829 777731Wavelength (nm)Oxideacebd f Raman intensity (CCD counts)1,5001,00050000.40.30.20.10.01,590 cm −11,498 cm −1d I /d V (μA V –1)1,609 cm –11,631 cm–11 μm1 μmTime (s)Figure 3 | Simultaneous studies of optical effects and transport. a , A scanning electron micrograph (left) of an electromigrated Au junction (light contrast) lithographically defined on a Si substrate (darker contrast). The nanoscale gap results in a ‘hot spot’ where Raman signals are enhanced, as seen in the optical image (right). b , Simultaneously measured differential conductance (black, bottom) and amplitudes of two molecular Raman features (blue traces, middle and top) as a function of time in a p-mercaptoaniline junction. c , Schematic representation of a bipyridine junction formed between a Au STM tip and a Au(111) substrate, where the tip enhancement from the atomically sharp STM tip results in a large enhancement of the Raman signal. d , The measured Raman spectra as a function of applied bias indicate breaking of symmetry in the bound molecule. e , Schematic representation of a Mg-porphyrin (MgP) molecule sandwiched between a Ag STM tip and a NiAl(110) substrate. A subnanometre alumina insulating layer is a key factor in measuring the molecular electroluminescence, which would otherwise be overshadowed by the metallic substrate. f , Emission spectra of a single Mg-porphyrin molecule as a function of bias voltage (data is vertically offset for clarity). At high biases, individual vibronic peaks become apparent. The spectra from a bare oxide layer (grey) is shown for reference. Figure reproduced with permission from: a ,b , ref. 56, © 2008 ACS; c ,d , ref. 62, © 2011 NPG; e ,f , ref. 65, © 2008 APS.DOI: 10.1038/NNANO.2013.91light, which the authors assigned to the charge-separated state. In another approach, Lara-Avila et al.73 have reported investigations of a dihydroazulene (DHA)/vinylheptafulvene (VHF) molecule switch, utilizing nanofabricated gaps to perform measurements of Au–DHA–Au single-molecule junctions. Based on the early work by Daub et al.74, DHA was known to switch to VHF under illumina-tion by 353-nm light and switch back to DHA thermally. In three of four devices, the authors observed a conductance increase after irradiating for a period of 10–20 min. In one of those three devices, they also reported reversible switching after a few hours. Although much more detailed studies are needed to establish the reliability of optical single-molecule switches, these experiments provide new platforms to perform in situ investigations of single-molecule con-ductance under illumination.We conclude this section by briefly pointing to the rapid pro-gress occurring in the development of optical probes at the single-molecule scale, which is also motivated by the tremendous interest in plasmonics and nano-optics. As mentioned previously, light can be coupled into nanoscale gaps, overcoming experimental chal-lenges such as local heating. Banerjee et al.75 have exploited these concepts to demonstrate plasmon-induced electrical conduction in a network of Au nanoparticles that form metal–molecule–metal junctions between them (Fig. 3f). Although not a single-molecule measurement, the control of molecular conductance through plas-monic coupling can benefit tremendously from the diverse set of new concepts under development in this area, such as nanofabri-cated transmission lines 76, adiabatic focusing of surface plasmons, electrical excitation of surface plasmons and nanoparticle optical antennas. The convergence of plasmonics and electronics at the fundamental atomic- and molecular-length scales can be expected to provide significant opportunities for new studies of light–mat-ter interaction 77–79.Thermoelectric characterization of single-molecule junctions Understanding the electronic response to heating in a single-mole-cule junction is not only of basic scientific interest; it can have a tech-nological impact by improving our ability to convert wasted heat into usable electricity through the thermoelectric effect, where a temper-ature difference between two sides of a device induces a voltage drop across it. The efficiency of such a device depends on its thermopower (S ; also known as the Seebeck coefficient), its electric and thermal conductivity 80. Strategies for increasing the efficiency of thermoelec-tric devices turned to nanoscale devices a decade ago 81, where one could, in principle, increase the electronic conductivity and ther-mopower while independently minimizing the thermal conductiv-ity 82. This has motivated the need for a fundamental understandingof thermoelectrics at the single-molecule level 83, and in particular, the measurement of the Seebeck coefficient in such junctions. The Seebeck coefficient, S = −(ΔV /ΔT )|I = 0, determines the magnitude of the voltage developed across the junction when a temperature dif-ference ΔT is applied, as illustrated in Fig. 4a; this definition holds both for bulk devices and for single-molecule junctions. If an addi-tional external voltage ΔV exists across the junction, then the cur-rent I through the junction is given by I = G ΔV + GS ΔT where G is the junction conductance 83. Transport through molecular junctions is typically in the coherent regime where conductance, which is pro-portional to the electronic transmission probability, is given by the Landauer formula 84. The Seebeck coefficient at zero applied voltage is then related to the derivative of the transmission probability at the metal Fermi energy (in the off-resonance limit), with, S = −∂E ∂ln( (E ))π2k 2B T E 3ewhere k B is the Boltzmann constant, e is the charge of the electron, T (E ) is the energy-dependent transmission function and E F is the Fermi energy. When the transmission function for the junction takes on a simple Lorentzian form 85, and transport is in the off-resonance limit, the sign of S can be used to deduce the nature of charge carriers in molecular junctions. In such cases, a positive S results from hole transport through the highest occupied molecu-lar orbital (HOMO) whereas a negative S indicates electron trans-port through the lowest unoccupied molecular orbital (LUMO). Much work has been performed on investigating the low-bias con-ductance of molecular junctions using a variety of chemical linker groups 86–89, which, in principle, can change the nature of charge carriers through the junction. Molecular junction thermopower measurements can thus be used to determine the nature of charge carriers, correlating the backbone and linker chemistry with elec-tronic aspects of conduction.Experimental measurements of S and conductance were first reported by Ludoph and Ruitenbeek 90 in Au point contacts at liquid helium temperatures. This work provided a method to carry out thermoelectric measurements on molecular junctions. Reddy et al.91 implemented a similar technique in the STM geome-try to measure S of molecular junctions, although due to electronic limitations, they could not simultaneously measure conductance. They used thiol-terminated oligophenyls with 1-3-benzene units and found a positive S that increased with increasing molecular length (Fig. 4b). These pioneering experiments allowed the iden-tification of hole transport through thiol-terminated molecular junctions, while also introducing a method to quantify S from statistically significant datasets. Following this work, our group measured the thermoelectric current through a molecular junction held under zero external bias voltage to determine S and the con-ductance through the same junction at a finite bias to determine G (ref. 92). Our measurements showed that amine-terminated mol-ecules conduct through the HOMO whereas pyridine-terminatedmolecules conduct through the LUMO (Fig. 4b) in good agree-ment with calculations.S has now been measured on a variety of molecular junctionsdemonstrating both hole and electron transport 91–95. Although the magnitude of S measured for molecular junctions is small, the fact that it can be tuned by changing the molecule makes these experiments interesting from a scientific perspective. Future work on the measurements of the thermal conductance at the molecu-lar level can be expected to establish a relation between chemical structure and the figure of merit, which defines the thermoelec-tric efficiencies of such devices and determines their viability for practical applications.SpintronicsWhereas most of the explorations of metal–molecule–metal junc-tions have been motivated by the quest for the ultimate minia-turization of electronic components, the quantum-mechanical aspects that are inherent to single-molecule junctions are inspir-ing entirely new device concepts with no classical analogues. In this section, we review recent experiments that demonstrate the capability of controlling spin (both electronic and nuclear) in single-molecule devices 96. The early experiments by the groups of McEuen and Ralph 97, and Park 98 in 2002 explored spin-depend-ent transport and the Kondo effect in single-molecule devices, and this topic has recently been reviewed in detail by Scott and Natelson 99. Here, we focus on new types of experiment that are attempting to control the spin state of a molecule or of the elec-trons flowing through the molecular junction. These studies aremotivated by the appeal of miniaturization and coherent trans-port afforded by molecular electronics, combined with the great potential of spintronics to create devices for data storage and quan-tum computation 100. The experimental platforms for conducting DOI: 10.1038/NNANO.2013.91。
二维MoS2薄膜的可控制备及其电子输运特性研究
二维MoS2薄膜的可控制备及其电子输运特性研究【摘要】二维MoS2作为一种新型半导体材料,在电子学和光电子学领域具有广泛的应用前景。
在本文研究中,我们采用化学气相沉积(CVD)技术在氧化硅基底上制备了高质量的二维MoS2薄膜,并通过压电传感器进行了表征。
通过在不同条件下控制CVD过程中的温度、气体流量和反应时间等参数,成功地实现了对MoS2薄膜的可控制备。
同时,利用离子束雕刻技术对MoS2薄膜进行了纳米加工,使其形成了具有排列有序的长条纹的结构,可作为电极进行电子输运特性研究。
进一步的电子输运实验表明,MoS2薄膜具有半导体特性,并在室温下呈现出n型导电性。
在不同温度和电场的情况下,MoS2薄膜的电子输运性质表现出明显的变化。
通过调控材料的缺陷和掺杂,成功地实现了对MoS2薄膜电子输运特性的调控。
结果表明,MoS2薄膜在电子学和光电子学器件中具有广泛的应用前途。
【关键词】二维MoS2;CVD;可控制备;纳米加工;电子输运特性【Abstract】Two-dimensional (2D) MoS2 as a novel semiconductor material has great potential applications in thefields of electronics and optoelectronics. In this study, high-quality 2D MoS2 film was prepared on aSiO2 substrate by chemical vapor deposition (CVD) technique and characterized by piezoelectric sensors. The controllable preparation of MoS2 film was achieved by controlling the temperature, gas flow rate, and reaction time in the CVD process under different conditions. Meanwhile, the MoS2 film was patterned by ion beam etching, forming a structure with a longitudinally aligned stripe that was used as an electrode for the study of electronic transport characteristics.Further electronic transport experiments demonstrated that the MoS2 film exhibited semiconductor properties and showed an n-type conductivity at room temperature. The electronic transport properties of MoS2 film showed significant changes under different temperatures and electric fields. By controlling the material defects and doping, the electronic transport characteristics of MoS2 film were successfully regulated. The results indicated that MoS2 film had great potential applications in electronics and optoelectronics devices.【Keywords】Two-dimensional MoS2; CVD; Controllable preparation; Nanofabrication; Electronic transport characteristicTwo-dimensional MoS2 has attracted increasingattention in recent years due to its unique properties and potential applications in electronics and optoelectronics devices. In order to fully utilize its potential, the controllable preparation of high-quality MoS2 film is crucial.One of the most commonly used methods for preparing MoS2 film is chemical vapor deposition (CVD). By controlling the growth conditions, such as temperature, pressure, and precursor concentration, high-quality MoS2 film with uniform thickness and large area can be obtained.The electronic transport properties of MoS2 film are strongly dependent on its crystal quality, defect density, and doping level. It has been found that the electronic transport properties of MoS2 film can be significantly improved by reducing the defect density and doping with certain impurities.Under different temperatures and electric fields, the electronic transport properties of MoS2 film exhibitsignificant changes. For instance, the electrical conductivity of MoS2 film can increase with increasing temperature or electric field due to the enhanced carrier mobility. Furthermore, the conductivity can also be tuned by controlling the doping level, as certain dopants can either enhance or suppress the carrier concentration.In summary, the controllable preparation andregulation of electronic transport characteristics of MoS2 film provide opportunities for its potential applications in future electronic and optoelectronics devices. The nanofabrication of MoS2-based devices with high performance and reliability can be achieved with the advancement of the synthesis and characterization techniquesApart from electronic and optoelectronic applications, MoS2 films also have potential in other fields such as energy storage and catalysis. One of the most promising applications is in supercapacitors, which are energy storage devices with high power density and fast charging and discharging capabilities. MoS2 has been explored as an electrode material for supercapacitors due to its large surface area, high electrical conductivity, and good stability. Researchers have reported that MoS2-basedsupercapacitors exhibit excellent electrochemical performance, which can be further improved by tuning the morphology and structure of the material.MoS2-based catalysts have also attracted muchattention in recent years due to their high catalytic activity and selectivity in various chemical reactions. For instance, MoS2 has been reported to be anefficient catalyst for the hydrogen evolution reaction (HER), which is a key step in water-splitting technologies for the production of hydrogen fuel. The high catalytic activity of MoS2 for HER can be attributed to its unique electronic and geometric structures, as well as the synergistic effect between the active sites and the support material.In addition, MoS2 can also be used as a catalyst for other reactions such as hydrodesulfurization (HDS) and oxygen reduction reaction (ORR), which are important processes in the petrochemical industry and fuel cells, respectively. The catalytic performance of MoS2 can be further enhanced by modifying its surface chemistry, morphology, and structure through various methods such as doping, surface functionalization, and nanostructuring.Overall, the controllable preparation and regulationof MoS2 films offer great opportunities for their applications in various fields. With the continuous development of synthesis and characterization techniques, as well as the increasing understanding of the fundamental properties and behaviors of MoS2, we can expect more breakthroughs in the design and fabrication of advanced MoS2-based materials and devices in the futureOne promising application of MoS2 is in optoelectronics. Due to its direct bandgap nature and strong light-matter interaction, MoS2 has been demonstrated to have excellent performance as a photoelectric material, making it an ideal candidatefor solar cells and photodetectors. Additionally,MoS2-based light-emitting diodes (LEDs) have shown promising performance in terms of brightness and efficiency, and could potentially be integrated with electronic devices for optoelectronic applications.Another potential application of MoS2 is in energy storage devices, such as batteries and supercapacitors. MoS2 has been shown to have a high specific capacitance and excellent cycling stability, making it an attractive electrode material for supercapacitors. In addition, MoS2 has been used as a cathode material in lithium-ion batteries, with promising results interms of both capacity and cycle life. Further research is needed to fully realize the potential of MoS2 in energy storage applications, but thematerial's unique properties make it a promising candidate for future developments.In the field of catalysis, MoS2 has shown great potential due to its high surface area, abundance, and unique electronic and chemical properties. MoS2-based catalysts have been used in various applications, such as electrocatalysis, photocatalysis, and hydrogen evolution reactions. Additionally, MoS2-basedcatalysts have shown promising activity for conversion of greenhouse gases, such as carbon dioxide, into valuable chemicals, making them a potentially important tool for addressing climate change.Overall, the unique properties and versatile applications of MoS2 make it an exciting material for research and development in various fields. As the understanding of MoS2 continues to grow, we can expect to see more advances in the design and fabrication of advanced materials and devices. The development of new synthesis and characterization techniques will also play a critical role in unlocking the full potential of MoS2-based materials. Ultimately, these advancements have the potential to revolutionize anumber of industries and make a significant impact on our daily livesIn conclusion, MoS2 is a promising material that has garnered significant attention due to its unique properties and potential applications in various fields. The research and development in this area are expected to lead to significant advancements in the design and fabrication of advanced materials and devices, which could revolutionize numerous industries and make a significant impact on our daily lives. Continued efforts in the development of new synthesis and characterization techniques are critical to unlocking the full potential of MoS2-based materials。
三角反铁磁材料Mn3Z(Z=Ga,_Ge,_Sn)的磁性和输运性质
㊀第40卷㊀第11期2021年11月中国材料进展MATERIALS CHINAVol.40㊀No.11Nov.2021收稿日期:2021-07-14㊀㊀修回日期:2021-08-31基金项目:国家自然科学基金资助项目(51671024,91427304)第一作者:张强强,男,1995年生,博士研究生通讯作者:柳祝红,女,1976年生,教授,硕士生导师,Email:zhliu@DOI :10.7502/j.issn.1674-3962.202107017三角反铁磁材料Mn 3Z (Z =Ga,Ge,Sn)的磁性和输运性质张强强1,柳祝红1,马星桥1,刘恩克2(1.北京科技大学物理系,北京100083)(2.中国科学院物理研究所北京凝聚态物理国家实验室,北京100190)摘㊀要:反铁磁材料具有零磁矩或非常小的磁矩,不易受外磁场干扰㊂相对于铁磁材料,反铁磁材料具有更低的能量损耗和更高的响应频率等优点,因在自旋电子学领域的实际应用方面具有巨大潜力而备受关注㊂作为一种兼具Kagome 晶格及三角反铁磁性的特殊自旋电子学材料,六角Mn 3Z (Z =Ga,Ge,Sn)合金展现出巨大的反常霍尔效应㊁拓扑霍尔效应㊁自旋霍尔效应以及反常能斯特(Nernst)效应等㊂这些物理效应涉及到当今凝聚态物理研究中最前沿的问题,对它们的研究不仅可以深化对凝聚态磁性物理的理解,而且也驱动了反铁磁自旋电子学的发展㊂首先介绍了Mn 3Z 合金的晶格结构及特殊的磁结构,简要分析了理论计算得到的电子结构对材料输运性能的影响㊂结合实验报道的Mn 3Z 的磁性及输运性质等对3种六角结构合金的优异性能及研究进展进行了概述,揭示了磁结构和电子结构对材料输运性质的物理机制,并对Mn 3Z 系列合金拓扑相关的输运性质进行了展望㊂关键词:Mn 3Z (Z =Ga,Ge,Sn);反铁磁材料;拓扑材料;霍尔效应;能斯特(Nernst)效应中图分类号:O469㊀㊀文献标识码:A㊀㊀文章编号:1674-3962(2021)11-0861-10Magnetic and Transport Properties of Triangular Antiferromagnetic Materials Mn 3Z (Z =Ga ,Ge ,Sn )ZHANG Qiangqiang 1,LIU Zhuhong 1,MA Xingqiao 1,LIU Enke 2(1.Department of Physics,University of Science and Technology Beijing,Beijing 100083,China)(2.Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academyof Sciences,Beijing 100190,China)Abstract :Antiferromagnetic materials exhibit zero or rather low moment,so it would not be affected by external magneticfield.Furthermore,they have advantages of lower power consumption and higher frequency response compared with ferro-magnetic materials,which makes them have great potential applications in the field of spintronics.Hexagonal Mn 3Z (Z =Ga,Ge,Sn)alloys,with both Kagome lattice and triangular antiferromagnetism,exhibit large anomalous Hall effect,topological Hall effect,spin Hall effect and anomalous Nernst effect.These effects involve the most advanced problems in condensed matter physics.The study of them can not only deepen the understanding of condensed matter magnetic physics,but also drive the development of antiferromagnetic spintronics.In this paper,the research progress in magnetic and transport proper-ties are reviewed.The crystal structure and the special magnetic structure of Mn 3Z alloys are introduced.The influence of the electronic structure on the transport properties is briefly analyzed.An overview of the excellent properties of the Mn 3Z (Z =Ga,Ge,Sn)alloys and their research progress is given in relation to the experimentally reported magnetic and transport proper-ties.An outlook is given for the topologically relevant transport properties of the Mn 3Z alloys.Key words :Mn 3Z (Z =Ga,Ge,Sn)alloys;antiferromagnetic materials;topological materials;Hall effect;Nernst effect1㊀前㊀言当前的自旋电子器件主要基于铁磁性材料㊂反铁磁材料由于具有零磁矩或者非常小的磁矩,没有杂散场,不受外磁场干扰,故具有更高的稳定性㊂同时,反铁磁博看网 . All Rights Reserved.中国材料进展第40卷材料具有更快的响应速度(响应频率高)㊁更低的能耗以及更高的存储密度等特性,为发展下一代非易失性低功耗反铁磁存储器件提供了契机,可能对磁性随机存储器㊁人工神经网络㊁太赫兹存储器件和探测器等领域产生重大影响㊂在众多的反铁磁材料中,非共线反铁磁材料Mn3Z(Z= Ga,Ge和Sn)中出现了许多引人关注的新颖物性,如反常霍尔效应(anomalous Hall effect,AHE)㊁自旋霍尔效应(spin Hall effect,SHE)㊁拓扑霍尔效应(topological Hall effect, THE)㊁反常能斯特效应(anomalous Nernst effect,ANE)等,已经成为当前凝聚态物理研究中的前沿与热点㊂六角Mn3Z(Z=Ga,Ge和Sn)合金具有DO19型结构,如图1a所示,空间群为P63/mmc(No.194)㊂其中Mn原子占据(1/6,1/3,1/4)位置,Z原子占据(1/3,2/3, 3/4)位置㊂在六角Mn3Z结构中,两种镜面对称的Mn3Z 反铁磁平面沿着c轴方向叠加嵌套,每一层的Mn位形成一个由共享等边三角形组成的二维网格,即Kagome晶格[1]㊂在六角Mn3Z(Z=Ga,Ge和Sn)合金中,所有Mn 原子的磁矩都位于ab平面,形成一个手性自旋结构,其矢量手性与通常的120ʎ结构相反㊂Mn3Z合金已经被证明具有多种类型的非共线反铁磁结构[2-6]㊂早在1990年Brown等[7]发现Mn3Z有两种最有可能的磁结构排列,分别如图1b和1c所示[2],这两种磁结构具有相反的手性,且磁结构数据与实验测量值高度吻合㊂因此,当前对Mn3Z(Z=Ga,Ge和Sn)合金的研究既有采用图1b型磁结构的,也有采用图1c型磁结构的㊂图1㊀六角Mn3Z的晶体结构(a)[1];Mn3Z合金的两种不同的磁矩构型(b,c)[2]Fig.1㊀Lattice structure of hexagonal Mn3Z(a)[1];the two different magnetic moment configurations of Mn3Z alloy,respectively(b,c)[2]㊀㊀由于六角Mn3Z合金在基态下会展现出极小的净磁矩,表现出弱铁磁性,实际上并不算严格的反铁磁材料㊂Mn3Z中倒三角形磁矩排列具有正交对称性,每个Mn原子组成的三角形中只有一个Mn原子的磁矩平行于局域易磁化轴,因此另外两个自旋磁矩向局域易磁化轴的倾斜被认为是Mn3Z弱铁磁性的来源[4,8]㊂在凝聚态物理中,材料所展现的许多物性都与其电子结构密切相关,而电子的行为反映在能带结构中㊂Mn3Ga㊁Mn3Ge和Mn3Sn的能带结构看起来非常相似,如图2所示[1]㊂由于Ga原子的价电子数相对于Ge 和Sn原子少一个,因此Mn3Ga的费米能级(E F)相对于Mn3Ge和Mn3Sn的向下移动约0.34eV㊂在Mn3Z合金中,能带结构在E F附近具有线性交叉,产生外尔(Weyl)点㊂Weyl点是动量空间中的奇点,可以被理解为磁单极子㊂这些点成对出现,并且产生特有的表面性质,即所谓的费米弧㊂Weyl点处具有极强的贝利(Berry)曲率磁通分布,这个Berry曲率可以看作是动量空间中的赝磁场㊂这3种合金的能带中价带和导带在E F附近多次交叉,产生多对Weyl点,其中大部分为II型(II型Weyl点与I型Weyl点的区别在于其能带中Weyl锥在某个动量方向上发生倾斜)[9]㊂Weyl点的位置和手性与磁晶格的对称性一致㊂其次,在高对称点K和A处可以发现看似相似的能带简并点,如图中红色圆圈所示㊂有趣的是,部分Mn3Z合金除了可以形成DO19型六角结构之外,还可能形成DO22型四方结构或DO3型哈斯勒(Heusler)立方结构㊂例如,Mn3Ga在623K的温度下退火会形成DO22型四方结构,在883K的温度下退火会形成DO19型六角结构,在1073K的温度下退火则会形成DO3型Heusler立方结构[10]㊂DO22型Mn3Ge在大约800K 的温度下会向DO19型六角结构转变[11]㊂因此,为了确保合金可以以稳定的DO19型六角结构结晶,合适的热处理是必要的㊂2㊀六角Mn3Sn合金的输运性质2.1㊀Mn3Sn中的AHEAHE是磁性材料中比较常见的输运效应,由于其在自旋电子学器件材料方面具有潜在的应用前景,使其迅速成为材料科学等领域的研究热点之一㊂一般认为,铁磁性材料的AHE与其磁化强度成正比㊂由于反铁磁材料缺乏净剩磁矩,普遍认为反铁磁材料中不会出现AHE㊂268博看网 . All Rights Reserved.㊀第11期张强强等:三角反铁磁材料Mn 3Z (Z =Ga,Ge,Sn)的磁性和输运性质图2㊀Mn 3Ga(a)㊁Mn 3Ge(b)和Mn 3Sn(c)的能带结构[1]Fig.2㊀Electronic band structure for Mn 3Ga (a),Mn 3Ge (b)andMn 3Sn(c)[1]后来的研究表明,AHE 起源于两种不同的机制:一种是由杂质原子散射所引起的外禀散射机制,包括边跳机制和螺旋散射机制;另一种是晶体能带的Berry 曲率所驱动的内禀机制,与外部散射无关㊂Berry 曲率相当于布里渊区中的赝磁场,可以使电子获得一个额外的群速度,从而产生内禀反常霍尔电导(anomalous Hall conductivity,AHC)㊂内禀AHE 仅与材料的能带结构相关,这为在反铁磁材料中发现AHE 提供了条件㊂Mn 3Sn 在E F 附近的Weyl 点处所具有的Berry 曲率磁通分布是导致该材料出现大的反常霍尔电导的关键㊂2015年,日本研究人员首次报道了Mn 3Sn 单晶中产生的巨大的反常霍尔电导[12]㊂图3a 为室温下磁场沿(2110)方向测得的Mn 3Sn 单晶的AHE 曲线,可以看到反常霍尔电阻率在低磁场区域展现出一个相当大的跳跃㊂当磁场沿(0110)方向时,Mn 3Sn 单晶在100~400K 的温度范围内均表现出较大的AHE,如图3b 所示㊂相应地,在外加磁场沿(2110)和(0110)方向时的霍尔电导曲线也展现出较大的跃变和比较窄的滞后(图3c 和3d)㊂例如,当磁场B //(0110)轴测量时,反常霍尔电导率σH 在零场时就具有比较大的值,其中在室温下约为20Ω-1㊃cm -1,在100K 的温度下接近100Ω-1㊃cm -1,这对于反铁磁材料来说是非常大的㊂图3㊀Mn 3Sn 单晶的AHE 测量曲线[12]Fig.3㊀Magnetic field dependence of the AHE in Mn 3Sn [12]368博看网 . All Rights Reserved.中国材料进展第40卷㊀㊀Mn 3Sn 的可变磁结构会影响费米面附近的能带结构,进而影响其AHE㊂为了更好地对AHE 进行调控,北京科技大学陈骏团队对多晶Mn 3Sn 复杂的磁结构及其与AHE 的相关性进行了研究[13]㊂研究发现,Mn 3Sn 在不同的外部磁场下带场冷却(field-cooling,FC)的得到测量曲线在磁转变温度T S =190K 时存在明显的磁相变(图4a)[13]㊂早期研究表明,Mn 3Sn 在奈尔温度T N =420K 以下是三角反铁磁结构[14],并且三角反铁磁结构在T S 温度下转变为非公度自旋结构[15]㊂在自旋玻璃转变温度T g =50K 的温度以下,磁化强度随着温度的降低而升高,这主要是由于低温下的自旋玻璃态引起的[16]㊂外加磁场的大小几乎不影响FC 曲线的形状和磁转变温度的大小,并且外加磁场强度的增加只导致Mn 3Sn 磁化强度的小幅增加,表明Mn 3Sn 中的磁结构非常稳定㊂图4b 为Mn 3Sn 在不同温度下的M-H 曲线,可以看到所有温度下的M-H 曲线在6000Oe 的外场下都没有达到饱和㊂当温度高于200K 时M-H 曲线展现出明显的磁滞,表明非共线反铁磁Mn 3Sn 存在弱铁磁性㊂为了明确其磁转变所产生的不同磁结构,采用中子衍射测量之后分析发现Mn 3Sn 的磁相图可分为4个区域:①10<T <190K,②190<T <250K,③250<T <430K,④T >430K㊂其中,250<T <430K 下为反三角的反铁磁(antiferromagnetic,AFM)结构,10<T <190K 为余弦或摆线磁结构㊂宏观磁性测量结果表明,Mn 3Sn 在50K 温度以下存在自旋玻璃态;然而中子衍射测量结果显示,Mn 3Sn 在50K 温度以下并没有任何异常,因此可以认为Mn 3Sn 在50K 温度下存在自旋玻璃态与长程螺旋磁结构的共存㊂在不同温度下对Mn 3Sn 的霍尔电阻率(ρH )进行测量发现,该曲线具有明显的磁滞(图5a)㊂当T =235K 时,|ρH |为2.5μΩ㊃cm;当T =190K 时,ρH 接近于0,且|ρH |随着外加磁场磁感应强度B 的增加而线性增加㊂从ρH -B 曲线中提取了零场(B =0T)下的ρH 来揭示AHE自发分量的温度依赖性(图5b),发现|ρH |在190K 温度以下几乎保持为0,在大约235K 时增加到最大值,然后随着温度的升高而降低㊂很明显,ρH 的变化与温度导致的磁结构的变化密切相关㊂根据这一关系,可以通过改变Mn 3Sn 的磁性结构来调整其AHE㊂图4㊀Mn 3Sn 在不同外加磁场下带场冷却得到的热磁曲线(a),Mn 3Sn 在不同温度下的磁滞回线(b)[13]Fig.4㊀Magnetization as a function of the external magnetic field and temperature[field-cooling (FC)modes](a),hysteresis loops ofMn 3Sn at different temperatures (b)[13]图5㊀Mn 3Sn 不同温度下的霍尔电阻率随磁场的变化曲线(ρH -B 曲线)(a),零场下霍尔电阻率的温度依赖性(b)[13]Fig.5㊀Field dependence of Hall resistivity ρH at different temperatures(a),temperature dependence of Hall resistivity at zero field(b)[13]468博看网 . All Rights Reserved.㊀第11期张强强等:三角反铁磁材料Mn3Z(Z=Ga,Ge,Sn)的磁性和输运性质2.2㊀Mn3Sn中的THE将拓扑学的概念引入到物理学中来描述随参数连续变化而保持不变的物理量时,能够解释很多关于磁输运方面的问题和现象[17,18]㊂拓扑非平庸自旋结构的局部磁矩在几何阻挫或Dzylashinsky-Moriya相互作用(DMI)的驱动下发生空间变化,产生了一种不同类型的霍尔效应,即THE[19]㊂THE的起源可归因于非零的标量手性自旋X ijk=S i㊃(S jˑS k),其中S i㊃(S jˑS k)代表3个自旋矢量形成的立体角,打破了时间对称性,称为实空间的Berry曲率㊂由于同样具有120ʎ非共线反铁磁结构的Fe1.3Sb已经被报道具有THE[20],Nayak等对Mn3Sn合金中的THE进行了研究[21]㊂霍尔效应总的贡献可以表示为ρxy=ρN+ρM AH+ρT xy,其中ρN和ρT xy分别是正常和拓扑霍尔电阻率[17]㊂ρM AH是与Mn3Sn的磁化强度成正比的反常霍尔电阻率㊂正常霍尔电阻率与外加磁场强度成正比㊂通过从测得的霍尔数据ρxy中扣除正常和反常霍尔电阻率,可以得到拓扑霍尔电阻率ρT xy㊂图6a为在不同测试温度下得到的Mn3Sn的拓扑霍尔电阻率曲线,可以看到在低温下Mn3Sn中存在大的THE,这是由于低温下施加磁场会导致Mn3Sn中非共面的三角反铁磁转变为受拓扑保护的非平庸自旋结构(类似Skyrmions),导致实空间的Berry曲率出现[21]㊂同时,他们还发现Mn3Sn中存在3种不同的霍尔效应,包括在相对高温下的由共面三角AFM结构演化出的自发AHE(ρS xy)㊁低温下的THE(ρT xy)以及中间温区域中两种霍尔效应的共存,如图6b所示㊂2.3㊀Mn3Sn中的ANEANE是由热电流引起的自发横向电压降,与磁化强度成正比[22]㊂AHE由所有占据态能带的Berry曲率决定,而ANE是由E F处的Berry曲率决定的[23]㊂因此,能观察到大的AHE并不能保证观察到大的ANE㊂ANE的测量对于明确E F附近的Berry曲率和验证最近提出的Mn3Sn中Weyl点存在的可能性具有重要价值[9]㊂Ikhlas等对单晶Mn3.06Sn0.94和Mn3.09Sn0.91的Nernst 效应进行了研究[24]㊂结果表明,零磁场下Mn3.06Sn0.94的Nernst信号(横向热电势)-S zx在室温下为~0.35μV㊃K-1 (图7a),与室温下的FePd(0.468μV㊃K-1)㊁L10-MnGa (-0.358μV㊃K-1)等铁磁体的报道值相当[25];在200K 的温度下达到了~0.60μV㊃K-1(图7b)㊂面内的Nernst 信号表现出几乎没有各向异性的滞后现象,零场下展现的Nernst信号值与高场下的饱和Nernst信号几乎相同,表明单晶Mn3Sn中具有大的自发Nernst信号㊂但面外c 轴分量在实验精度范围内测量值为0,表明在这个方向上没有自发Nernst效应㊂通过ANE与磁化强度M的对比图6㊀Mn3Sn在不同温度下拓扑霍尔电阻率ρT xy的磁场依赖性(a),不同霍尔效应贡献的相图(b)[21]Fig.6㊀Field dependence of topological Hall resistivityρT xy at different temperatures(a),phase diagram showing contribution from dif-ferent Hall effects(b)[21]发现(图7a),低场下-S zx和M的滞后几乎相互重叠㊂另外,在大于~100G的磁场区域,ANE效应几乎保持不变,而M随着磁场的增加呈线性增加,表明正常的Nernst效应和传统的ANE的贡献可以忽略不计㊂在Mn3.09Sn0.91中也可以观察到类似的行为(图7b)㊂3㊀六角Mn3Ge合金的输运性质3.1㊀Mn3Ge单晶中的AHE与Mn3Sn相比,Mn3Ge在磁性和AHE方面有所不同,在Mn3Ge中测量得到的反常霍尔电导值比Mn3Sn中的高将近3倍㊂此外,Mn3Ge并不会展现出类似于Mn3Sn中的任何磁转变,为其AHE的稳定性提供了保障㊂Nayak等采用如图8a所示的磁结构通过第一性原理计算预测了Mn3Ge合金中的反常霍尔电导[26]㊂结果表明,Mn3Ge在xy(σz xy)和yz(σx yz)部分的反常霍尔电导接近于零,只有在xz(σy xz)部分发现了反常霍尔电导的存在(图8b)㊂其中,σk ij表示电流沿着j方向的反常霍尔电导,产生的霍尔电压沿i方向㊂Mn3Ge反铁磁结构的两个原始单元具有两个磁性层面,相互之间可以通过相对于xz平面的镜面反射加上沿c轴平移c/2转换㊂由于镜像对称,Mn2Ge合金的σk ij平行于镜面的话就会消失,从568博看网 . All Rights Reserved.中国材料进展第40卷图7㊀300K 的温度下Mn 3.06Sn 0.94的Nernst 信号-S ji 在不同测量方向下的磁场依赖性(a);200K 的温度下Mn 3.06Sn 0.94和Mn 3.09Sn 0.91的-S zx 的磁场依赖性(b)[24]Fig.7㊀Anisotropic field dependence of the Nernst signal -S ji of Mn 3.06Sn 0.94at 300K for comparison,the field dependence of the magneti-zation M (right axis)is shown(a);-S zx of Mn 3.06Sn 0.94and Mn 3.09Sn 0.91measured at 200K(b)[24]图8㊀计算中所采用的Mn 3Ge 的磁结构(a),第一布里渊区和动量依赖的反常霍尔电导(b)[26]Fig.8㊀The magnetic structure of Mn 3Ge used in the calculation(a),first Brillouin zone and momentum-dependent AHC(b)[26]而导致σz xy 和σx yz 的值为零㊂但是因为平面内残存的净磁矩作为镜面对称的扰动,导致σz xy 和σx yz 可以获得非零但是很小的值㊂相比之下,σk ij 垂直于镜面的分量(σy xz )是非零的㊂接着,他们在实验上对预测的AHE 进行了实验验证㊂当电流沿(0001)方向㊁磁场平行于(01-10)(这种测量方式称为构型1)时(图9a),ρH 在2K 的温度下达到5.1μΩ㊃cm 的大饱和值,即使在室温下也展现出了1.8μΩ㊃cm 的饱和值㊂在霍尔电导率曲线σxz -μ0H 中可以看到(图9b),反常霍尔电导在2K 的温度下具有~500Ω-1㊃cm -1的较大的值,在室温下则为50Ω-1㊃cm -1㊂为了进一步研究实验中的AHE 是否具有理论预测的各向异性,测量了电流沿(01-10)方向㊁磁场平行于(2-1-10)方向(构型2)时的霍尔电阻率,如图9c 所示㊂在这种测量方向下,ρH 在2K 的温度下约为4.8μΩ㊃cm,在室温下约为1.6μΩ㊃cm,略小于构型1得到的值㊂图9d 为构型2下的反常霍尔电导曲线,可以看到尽管在2K 的温度下构型2的σH (σyz )(约为150Ω-1㊃cm -1)要小于构型1的σH (σxz ),但在室温下具有与构型1相似的值㊂在这两种情况下,对于正(负)场,ρH 为负(正)㊂第3种测量方式为电流沿着(2-1-10)方向㊁磁场平行于(0001)方向(图9e 和9f),被称为构型3㊂在这种构型下,所有温度下的ρH 和σH 都具有比较小的值㊂此外,AHE 的符号和前两种构型的符号相反,即相对于正(负)场,ρH 为正(负)㊂虽然在正常条件下Mn 3Ge 并不会展现出类似Mn 3Sn中的磁转变,但是如果对Mn 3Ge 施加外部压力的话其磁结构会发生显著变化㊂研究表明,随着压力的增大,Mn 3Ge 的非共线三角磁结构逐渐变为均匀倾斜的非共线三角磁结构,当压力增大到5GPa 以上时变为共线铁磁结构[27]㊂由于Mn 3Sn 合金中磁结构的变化在很大程度上会影响其输运性能,因此可以通过施加不同的压力来改变Mn 3Ge 合金中的磁结构,从而进一步研究Mn 3Ge 的磁结构与AHE 的关系㊂Nicklas 等测量了静水压力与AHE 之间的关系[28],测量装置如图10a 所示,电流平行于(0001)轴,磁场平行于(2-1-10)轴㊂研究发现,随着压力的增大,霍尔电导668博看网 . All Rights Reserved.㊀第11期张强强等:三角反铁磁材料Mn3Z(Z=Ga,Ge,Sn)的磁性和输运性质图9㊀电流和磁场沿不同方向(3种构型)下的霍尔电阻率(ρH)(a,c 和e)和霍尔电导率(σH)(b,d和f)的磁场依赖性[26] Fig.9㊀Hall resistivity(ρH)(a,c and e)and Hall conductivity(σH) (b,d and f)as a function of magnetic field(H),for three differ-ent current and magnetic field configurations[26]率σyz的饱和值先降低,当压力为1.53GPa时完全消失;继续增大压力,σyz的饱和值反向并逐渐增大,如图10b所示㊂在2.85GPa的压力下,Mn3Ge合金中Mn 原子的磁矩会由图10c顶部的磁结构变化为底部的磁结构㊂可以看到压力会导致磁矩向面外倾斜,进而影响电子能带结构,从而导致Berry曲率的变化㊂除了反常霍尔电导之外,理论预测在Mn3Ge中还可以获得高达1100(ћ/e)Ω-1㊃cm-1的自旋霍尔电导率[26]㊂在对Mn3Ge薄膜样品的研究中,在Permalloy/Mn3Ge表面发现了高达90.5nm-2的自旋混合电导系数,并且Mn3Ge的自旋霍尔角是Pt的8倍左右[29]㊂3.2㊀Mn3Ge中的ANE由于Mn3Sn的磁结构在T=50K以下缺乏磁有序性,并且形成了玻璃态的磁基态,从而导致ANE消失[15]㊂而Mn3Ge的磁有序和反常输运性质通常持续到最低温度,与Mn3Sn形成鲜明对比㊂Wuttke等对Mn3Ge单晶的Nernst效应进行了测量,如图11所示[30]㊂结果表明,Nernst信号S xz不依赖于磁场,表现出反常的行为,在非常低的磁场下即表现出步进特征,并且在B>0.02T时就已经达到了饱和值㊂S yz 也表现出非常弱的场依赖性,如图11b所示㊂两种方向都显示出高达室温的特殊饱和行为,随着温度的逐渐降低,Nernst信号从0.4逐渐升高到1.5μV㊃K-1㊂S xy则显图10㊀压力元件内使用的电传输测量样品装置示意图(a),室温下施加不同压力的Mn3Ge的霍尔电导率(b),在环境压力(顶部)和压力为2.85GPa(底部)下的Mn3Ge的反三角自旋结构(c)[28]Fig.10㊀Schematic drawing of the sample device for the electrical-transport measurements used inside the pressure cell(a),field dependence Hall conductivity for Mn3Ge at room temperature for selected pressures(b),the inverse triangular magnetic structure of Mn3Ge at ambient pressure(top)and P=2.85GPa(bottom)(c)[28]768博看网 . All Rights Reserved.中国材料进展第40卷图11㊀Mn3Ge单晶的Nernst信号测量曲线[30]Fig.11㊀Nernst signal of the Mn3Ge single crystals[30]示出不同的行为,如图11c所示㊂在这种配置中,Nernst 信号非常小,阶梯状的行为只是略微可见,并且显示出非常弱的温度依赖性㊂除了单晶Mn3Ge之外,Mn3Ge薄膜在室温下也展现出0.1μV㊃K-1的反常Nernst信号,与铁磁性Fe薄膜的反常Nernst信号(0.4μV㊃K-1)相当[29]㊂4㊀六角Mn3Ga合金的输运性质4.1㊀Mn3Ga中的AHE到THE的转变在同样具有手性的非共线三角反铁磁Mn3Ga中依然存在大的AHE㊂不同的是Mn3Ga存在六角到正交的晶格畸变,原来的共面磁结构会向c轴转变,使得非共面磁结构产生,这就导致Mn3Ga中THE的出现[31]㊂Mn3Ga在100Oe磁场下的磁化强度会随温度的降低先增加(图12)[31],到140K左右出现一个磁转变,并且升降温曲线在此处展现出很明显的热滞,此处即为六角结构到正交结构的轻微畸变[32]㊂变频交流磁化率的测量表明这个转变没有频率依赖(图12插图),和结构变化相对应㊂图12㊀Mn3Ga在100Oe磁场下的热磁曲线,插图为不同频率的交流磁化率实部随温度的变化关系[31]Fig.12㊀M-T curves measured at100Oe field for Mn3Ga,the inset is temperature dependence of the real part of AC susceptibilitymeasured at different frequencies[31]图13a和13b为不同温度下多晶Mn3Ga的霍尔电阻率测量图[31]㊂在较低的磁场范围内,ρxy随着磁场的增大迅速增大,并且展现出比较小的磁滞㊂在低于100K 的温度范围内,曲线的形状及ρxy的值并不随温度明显变化(图13a)㊂当温度高于100K时,曲线的形状类似,随着磁场的增加,ρxy先迅速增大后趋于平缓㊂自发霍尔效应的符号在高于100K时发生改变,这个温度临界点对应于Mn3Ga的六角结构到正交结构的转变温度㊂随着磁场的增大,霍尔电导率σxy先迅速增加,当磁场高于0.03T之后,又逐渐减小(图13c)㊂图13d为ρxy中提取到的ρT xy,可以看到ρT xy几乎不随温度的变化而变化㊂同时,ρT xy随着磁场增加先迅速增大继而减小,表现出一个极值㊂ρT xy的极值大小也几乎与温度无关,最大值约为0.255μΩ㊃cm,比块体MnNiGa(~0.15μΩ㊃cm)和MnGe(~0.16μΩ㊃cm)的值都大[33,34]㊂THE的出现是由于在Mn3Ga中伴随着六角结构到正交结构的转变,磁矩排列由非共线向非共面转变导致的㊂4.2㊀Mn3Ga/PMN-PT中的AHE室温反铁磁自旋电子器件的主要瓶颈之一是反铁磁材料中有限的各向异性磁电阻导致的小信号读出㊂这可以通过在非共线反铁磁物质中利用Berry曲率诱导的反常霍尔电阻或者基于反铁磁自旋的有效操纵建立磁隧道结器件来克服㊂因此,刘知琪团队在300ħ的溅射温度下在(100)取向的铁电0.7PbMg1/3Nb2/3O3-0.3PbTiO3(PMN-PT)单晶衬底上生长了50nm厚的Mn3Ga薄膜,并通过压电应变调制对反常霍尔电阻进行了研究[35]㊂研究结果表明,在50~300K的温度范围内,随着温度的降低,零磁场下的霍尔电阻从~0.112Ω增加到~0.364Ω,用于切换反常霍尔电阻的矫顽场从93mT显868博看网 . All Rights Reserved.㊀第11期张强强等:三角反铁磁材料Mn 3Z (Z =Ga,Ge,Sn)的磁性和输运性质图13㊀不同温度下六角Mn 3Ga 的AHE(a~c)和THE(d)[31]Fig.13㊀Anomalous Hall effect (a~c)and topological Hall effect (d)of hexagonal Mn 3Ga at different temperatures [31]著增加到667.6mT(图14a ~14c)㊂由于静电调制机制对50nm 厚的Mn 3Ga 金属薄膜几乎不起作用,因此通过在PMN-PT 衬底上垂直施加4kV㊃cm-1的栅极电场E G ,分析了压电应变对AHE 的影响,如图14d ~14f 所示㊂可以看到E G =4kV㊃cm-1的AHE 在所有温度下都表现出巨大的变化㊂例如在50K 的温度下,零场的霍尔电阻从E G =0kV㊃cm-1时的~0.364Ω变化到了E G =4kV㊃cm-1时的~0.010Ω㊂由于非共线反铁磁体中的AHE 是其自旋结构的敏感探针,压电应变下AHE 的巨大变化表明其自旋结构在应变调控下发生了巨大的变化㊂4.3㊀Mn 3Ga 薄膜中的逆自旋霍尔效应和自旋泵浦自旋泵浦效应是产生自旋流的重要方法,进一步利用逆自旋霍尔效应(ISHE),可以将自旋流转化为可探测的电荷信号,从而实现自旋泵浦的电测量㊂因此,自旋泵浦效应结合ISHE 成为研究各种材料中自旋-电荷转换的经典手段㊂Singh 等对室温下多晶Mn 3Ga /CoFeB 异质结中的ISHE 和自旋泵浦效应进行了系统的研究[36]㊂实验中通过对ISHE 进行不同角度的测量来分解各种自旋整流效应㊂最终得到的自旋混合电导系数㊁自旋霍尔角和自旋霍尔电导率的值分别为(5.0ʃ1.8)ˑ1018m -2㊁0.31ʃ0.01和7.5ˑ105(ћ/2e)Ω-1㊃m -1㊂如此高的自旋霍尔角和自旋霍尔电导率使得Mn 3Ga 在未来的自旋电子器件中具有很好的应用前景㊂5㊀结㊀语本文对具有非共线反铁磁的DO 19型六角Mn 3Z (Z=图14㊀在300K(a)㊁200K(b)和50K(c)的温度下,E G =0kV㊃cm -1时Mn 3Ga /PMN-PT 异质结构的反常霍尔电阻;在300K (d)㊁200K(e)和50K(f)的温度下,E G =4kV㊃cm -1时Mn 3Ga /PMN-PT 异质结构的反常霍尔电阻[35]Fig.14㊀Magnetic-field-dependent anomalous Hall resistance of the Mn 3Ga/PMN-PT heterostructure at E G =0kV㊃cm -1at 300K(a),200K (b)and 50K(c);magnetic-field-dependent anomalous Hall re-sistance of the Mn 3Ga/PMN-PT heterostructure at E G =4kV㊃cm -1at 300K(d),200K(e)and 50K(f)[35]968博看网 . All Rights Reserved.中国材料进展第40卷Ga,Ge,Sn)合金的磁性和输运性质进行了综述㊂发现通过理论计算对Mn3Z合金的输运性质进行预测之后,在实验上都得到了验证,并观察到了非常优异的物理性能㊂这表明通过理论计算能带结构,调控和发现E F附近具有Weyl点的材料,从而寻找输运性能优异的材料是可行的㊂当前对Mn3Z(Z=Ga,Ge,Sn)合金的报道已经提供了明确的经验框架,为后期及进一步制作具备优良性能的非共线反铁磁材料打下了坚实的基础㊂因此,还需要大量的理论计算及实验以进一步指导六角反铁磁材料输运性能的有效调控㊂另外,通过对其他材料体系的研究发现,适当的无序掺杂会明显提高材料拓扑能带引起的Berry曲率,进而提升其输运性能,这为将来进一步提升六角反铁磁Mn3Z(Z=Ga,Ge,Sn)合金的性能提供了重要思路㊂参考文献㊀References[1]㊀ZHANG Y,SUN Y,YANG H,et al.Physical Review B[J],2017,95(7):075128.[2]㊀KÜBLER J,FELSER C.EPL(Europhysics Letters)[J],2018,120(4):47002.[3]㊀NAGAMIYA T.Journal of the Physical Society of Japan[J],1979,46(3):787-792.[4]㊀TOMIYOSHI S,YAMAGUCHI Y.Journal of the Physical Society ofJapan[J],1982,51(8):2478-2486.[5]㊀SANDRATSKII L M,KÜBLER J.Physical Review Letters[J],1996,76(26):4963.[6]㊀ZHANG D,YAN B,WU S C,et al.Journal of Physics:CondensedMatter[J],2013,25(20):206006.[7]㊀BROWN P J,NUNEZ V,TASSET F,et al.Journal of Physics:Condensed Matter[J],1990,2(47):9409.[8]㊀NYÁRI B,DEÁK A,SZUNYOGH L.Physical Review B[J],2019,100(14):144412.[9]㊀YANG H,SUN Y,ZHANG Y,et al.New Journal of Physics[J],2017,19(1):015008.[10]LIU Z H,TANG Z J,TAN J G,et al.IUCrJ[J],2018,5(6):794-800.[11]KALACHE A,KREINER G,OUARDI S,et al.APL Materials[J],2016,4(8):086113.[12]NAKATSUJI S,KIYOHARA N,HIGO T.Nature[J],2015,527(7577):212-215.[13]SONG Y,HAO Y,WANG S,et al.Physical Review B[J],2020,101(14):144422.[14]OHMORI H,TOMIYOSHI S,YAMAUCHI H,et al.Journal ofMagnetism and Magnetic Materials[J],1987,70(1-3):249-251.[15]LI X,XU L,DING L,et al.Physical Review Letters[J],2017,119(5):056601.[16]FENG W J,LI D,REN W J,et al.Physical Review B[J],2006,73(20):205105.[17]GALLAGHER J C,MENG K Y,BRANGHAM J T,et al.PhysicalReview Letters[J],2017,118(2):027201.[18]KANAZAWA N,KUBOTA M,TSUKAZAKI A,et al.Physical Re-view B[J],2015,91(4):041122.[19]BRUNO P,DUGAEV V K,TAILLEFUMIER M.Physical ReviewLetters[J],2004,93(9):096806.[20]SHIOMI Y,MOCHIZUKI M,KANEKO Y,et al.Physical ReviewLetters[J],2012,108(5):056601.[21]ROUT P K,MADDURI P V P,MANNA S K,et al.Physical Re-view B[J],2019,99(9):094430.[22]HUANG S Y,WANG W G,LEE S F,et al.Physical Review Let-ters[J],2011,107(21):216604.[23]XIAO D,YAO Y,FANG Z,et al.Physical Review Letters[J],2006,97(2):026603.[24]IKHLAS M,TOMITA T,KORETSUNE T,et al.Nature Physics[J],2017,13(11):1085-1090.[25]HASEGAWA K,MIZUGUCHI M,SAKURABA Y,et al.AppliedPhysics Letters[J],2015,106(25):252405.[26]NAYAK A K,FISCHER J E,SUN Y,et al.Science Advances[J],2016,2(4):e1501870.[27]SUKHANOV A S,SINGH S,CARON L,et al.Physical Review B[J],2018,97(21):214402.[28]DOS REIS R D,ZAVAREH M G,AJEESH M O,et al.PhysicalReview Materials[J],2020,4(5):051401.[29]HONG D,ANAND N,LIU C,et al.Physical Review Materials[J],2020,4(9):094201.[30]WUTTKE C,CAGLIERIS F,SYKORA S,et al.Physical Review B[J],2019,100(8):085111.[31]LIU Z H,ZHANG Y J,LIU G D,et al.Scientific Reports[J],2017,7(1):1-7.[32]NIIDA H,HORI T,NAKAGAWA Y.Journal of the Physical Societyof Japan[J],1983,52(5):1512-1514.[33]WANG W,ZHANG Y,XU G,et al.Advanced Materials[J],2016,28(32):6887-6893.[34]KANAZAWA N,ONOSE Y,ARIMA T,et al.Physical Review Let-ters[J],2011,106(15):156603.[35]GUO H,FENG Z,YAN H,et al.Advanced Materials[J],2020,32(26):2002300.[36]SINGH B B,ROY K,CHELVANE J A,et al.Physical Review B[J],2020,102(17):174444.(编辑㊀吴㊀锐)078博看网 . 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碳中和英文介绍
碳中和英文介绍1Carbon neutrality is an incredibly important concept in today's world! It refers to achieving a balance between the amount of greenhouse gases produced and the amount removed from the atmosphere. The significance of carbon neutrality cannot be overstated! Look at the current state of global climate change. Rising temperatures, melting glaciers, and more frequent extreme weather events are all alarming signs. This is why carbon neutrality is so crucial! It is the key to alleviating the immense pressure on our environment.Some countries have taken effective policies and measures to achieve carbon neutrality. For instance, some have invested heavily in renewable energy sources like solar and wind power. They have also promoted energy efficiency in industries and buildings. Isn't it inspiring to see these efforts? Moreover, they have implemented strict regulations on emissions and encouraged public transportation and cycling. These measures not only contribute to reducing carbon emissions but also create a sustainable future for generations to come.In conclusion, achieving carbon neutrality is not just a goal; it is an urgent necessity for the well-being of our planet and all living beings on it. How can we not strive for it with all our might?Carbon neutrality is an incredibly important and challenging goal for our planet! How can we achieve it? One key approach is the widespread promotion of renewable energy applications. Take solar and wind power for instance. They are clean and sustainable, but there are significant technical and cost issues to overcome. The efficiency of solar panels needs to be improved, and the storage of energy generated by wind turbines remains a complex problem. How can we solve these?Another aspect is the transformation of traditional energy sources. Shifting from fossil fuels like coal and oil to cleaner alternatives is no easy task. The infrastructure for traditional energy is deeply established, and the costs and disruption of change can be substantial. But we must do it! We need to invest heavily in research and development to find more efficient and economical solutions.The journey towards carbon neutrality is full of difficulties and uncertainties. But can we give up? No! We must persevere and find innovative ways to make our planet a better place. It's not just a responsibility, it's an opportunity to create a sustainable future for generations to come. So, let's act now and strive towards this noble goal with all our might!Carbon neutrality is a revolutionary concept that is transforming various industries! It aims to balance the amount of carbon dioxide emissions with its removal from the atmosphere. Let's take the transportation industry as an example. The electrification of transportation is a key step towards carbon neutrality. Electric vehicles are becoming more and more popular, but there are challenges too! The construction of charging facilities is a major issue. How can we ensure there are enough charging stations to meet the demand? Another industry, manufacturing, is also making great efforts to reduce carbon emissions. They are improving production processes, using more energy-efficient technologies and materials. But questions remain. How can we ensure these efforts are sustainable and scalable? And what about the cost implications for businesses? The impact of carbon neutrality on industries is profound and complex. It requires innovation, collaboration, and a long-term commitment. But isn't it worth it for a sustainable future? We must keep striving to achieve this important goal and create a better world for generations to come!4Oh my goodness! The topic of carbon neutrality is of utmost significance in today's world. It's not just a matter for big industries orgovernments; it concerns each and every one of us!Let's think about our daily lives. For instance, choosing green transportation like cycling or using public transport instead of driving alone can make a huge difference! Can you imagine the reduction in carbon emissions that would result from such simple choices? And saving electricity is another vital aspect. Turning off lights when not in use, using energy-efficient appliances – these are small actions that accumulate into a significant impact.Let me tell you about some amazing environmental volunteers. They devote their time and energy to promoting carbon neutrality. They organize community events to raise awareness, encourage people to adopt eco-friendly habits, and even participate in tree-planting activities. Isn't it inspiring?We all have a role to play in achieving carbon neutrality. It's our responsibility to make conscious choices and take actions that contribute to a sustainable future. So, let's not wait any longer! Let's act now and make our planet a better place for generations to come. How wonderful it would be if we all do our part!5Carbon neutrality is not just a buzzword; it is a revolutionary concept that is reshaping the economic landscape. How does it relate to economic development? Let's explore!The emerging carbon trading market is a prime example of its positive impact. It provides a platform for businesses to trade carbon credits, driving economic growth and innovation. Imagine companies investing in clean energy projects to earn credits and sell them to those in need. Isn't it fascinating? This not only reduces emissions but also creates new economic opportunities.Many enterprises are also pioneering innovative business models in their pursuit of carbon neutrality. Take a tech company that develops energy-efficient software solutions for industries. By helping these industries reduce their carbon footprint, they not only contribute to the environment but also gain a competitive edge and attract investors.However, there are challenges too. The transition requires significant upfront investments. But isn't it worth it for a sustainable future? We must ask ourselves, are we ready to embrace these changes and seize the opportunities that carbon neutrality brings? The answer is a resounding yes! It is the key to a prosperous and eco-friendly economy.。
天津大学光学考研复习辅导资料及导师分数线信息
天津大学光学考研复习辅导资料及导师分数线信息 天津大学光学考研科目包括政治、外语以及普通物理、量子力学。
研究方向主要包括生物医学光子学;现代光学测试学与图像处理;量子光学与量子通讯;导波光学与集成光子学;衍射光学及其应用。
考生可根据自己的兴趣选择具体的研究方向。
专业代码、名称及研究方向考试科目备注复试科目:光学070300光学①101思想政治理论②201英语一③717普通物理④837量子力学天津大学光学近两年考研录取情况院(系、所)专业报考人数录取人数理学院(2012年)光学10 3理学院(2013年)光学11 6天津大学理学院光学2012年的报考人数为10人,录取人数为3人,2013年的报考人数为11人,录取人数为6人。
由真题可以发现,现在考点涉及的广度和深度不断扩宽和加深。
由天津考研网签约的天津大学在读本硕博团队搜集整理了天津大学理学院光学考研全套复习资料,帮助考生梳理知识点并构建知识框架。
真题解析部分将真题按照知识点划分,条理清晰的呈现在同学们眼前。
然后根据各个考点的近几年真题解析,让同学对热点、难点了然于胸。
只有做到了对真题规律和趋势的把握,8—10月底的提高复习才能有的放矢、事半功倍!天津大学理学院光学考研导师信息吴萍纵向课题经费课题名称Sn-Zn基和Sn-Cu-Bi无铅焊球凸点互连电迁移行为及其失效机理研究2011-01-01--2013-12-31 负责人:吴萍科技计划:国家自然科学基金拨款单位:国家基金委合同经费:37课题名称纳米结构无铅焊球的制备及其在电子封装技术中的应用2006-04-01--2009-12-31 负责人:吴萍科技计划:天津市自然科学基金重点项目拨款单位:天津市科委合同经费:20课题名称均匀颗粒成型法制备Sn-3.0Ag-0.5Cu、Sn-8Zn-3Bi无铅焊球的热力学机理研究2007-01-01--2009-12-31 负责人:吴萍科技计划:国家自然科学基金拨款单位:国家基金委合同经费:29课题名称新型无铅复合焊球的研制及其电迁移失效机理研究2011-04-01--2014-03-31 负责人:吴萍科技计划:天津市自然科学基金重点项目拨款单位:天津市科委合同经费:20期刊、会议论文吴萍、周伟、刘立娟、李宝凌、张洪波均匀液滴喷射三维快速成型方法与装置吴萍、周伟、刘立娟、李宝凌、张洪波均匀液滴喷射三维快速成型方法与装置吴萍、周伟、刘立娟、李宝凌、王艺自动焊球封装植球方法与装置吴萍、周伟、刘立娟、李宝凌、徐志伟一种二次库仑分裂制备纳米颗粒的装置米文博人才称号教育部新世纪人才、天津市131人才计划第一层次、天津大学北洋青年学者纵向课题经费课题名称反应溅射Fe4N薄膜的自旋极化率、自旋注入和磁电阻效应研究2012-01-01--2015-12-31 负责人:米文博科技计划:国家自然科学基金面上项目拨款单位:国家自然科学基金委员会合同经费:60课题名称粒度可控、取向生长的L10结构FePt-C基二维颗粒膜的微结构和磁性2008-01-01--2010-12-31 负责人:米文博科技计划:国家自然科学基金青年基金拨款单位:国家自然科学基金委员会合同经费:24课题名称有序化L10结构FePt-C基颗粒膜的制备、结构与磁性2008-04-01--2011-03-31 负责人:米文博科技计划:天津市自然科学基金面上项目拨款单位:天津市科委合同经费:10课题名称Fe4N/半导体异质结构的自旋相关电子输运特性2013-01-01--2015-12-31 负责人:米文博科技计划:教育部留学回国人员启动基金项目拨款单位:教育部合同经费:3课题名称反应溅射Fe4N薄膜的自旋相关电子输运特性研究2012-04-01--2015-03-31 负责人:米文博科技计划:天津市自然科学基金重点项目拨款单位:天津市科委合同经费:20课题名称柔性有机自旋阀的磁电阻效应研究2014-01-01--2016-12-31 负责人:米文博科技计划:教育部新世纪人才计划拨款单位:教育部合同经费:50 课题名称磁性金属—氧化物半导体复合薄膜的磁电阻效应研究2008-01-01--2010-12-31 负责人:米文博科技计划:教育部博士点基金新教师基金拨款单位:教育部合同经费:3.6期刊、会议论文李滋润、米文博、王晓姹、张西祥Interfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe4N/CoN Bilayers ACS Appl. Mater.& Interfacesnull李滋润、封秀平、王晓姹、米文博Anisotropic Magnetoresistance in Facing-Target Reactively Sputtered Epitaxial γ'-Fe4N Films Mater. Res. Bull.null王俊宝、米文博、王来森、彭栋梁Interfacial scattering induced enhancement of anomalous Hall effect in uniform Fe nanocluster assembled films Europhys. Lett.null 李滋润、米文博、王晓姹、白海力Inversion of Exchange Bias and Complex Magnetization Reversal in Full-Nitride Epitaxial γ′-Fe4N/CoN Bilayers J. Magn. Magn. Mater.null 冯楠、米文博、王晓姹、白海力First-Principles Study on The Interfacial Magnetic and Electronic Properties of Fe4N(001)/Si and Fe4N(111)/Graphene Bilayers Comput. Mater. Sci.null冯楠、米文博、王晓姹、白海力The Magnetism of Fe4N/Oxides (MgO, BaTiO3, BiFeO3) Interfaces From First-Principles Calculations RSC Advancesnull张雪静、米文博、王晓姹、白海力First-Principles Prediction of Electronic Structure and Magnetic Ordering of Rare-earth Metals Doped ZnO J. Alloys Compd.null王俊宝、米文博、王来森、彭栋梁Enhanced anomalous Hall effect in Fe nanocluster assembled thin films Phys. Chem. Chem. Phys.null冯楠、米文博、程迎春、郭载兵、Udo Schwingenschl?gl、白海力Magnetism by Interfacial Hybridization and p-type Doping of MoS2 in Fe4N/MoS2 Superlattices: A First Principles Study ACS Appl. Mater. & Interfaces null张雪静、米文博、王晓姹、程迎春、Udo Schwingenschl?gl The Interface between Gd andMonolayer MoS2: A First-Principles Study Scientific Reportsnull冯楠、米文博、程迎春、郭载兵、Udo Schwingenschl?gl、白海力First Principles Prediction of the Magnetic Properties of Fe-X6 (X=S, C, N, O, F) Doped Monolayer MoS2 Scientific Reportsnull张雪静、米文博、郭载兵、程迎春、陈贵峰、白海力Role of Anion Doping on Electronic Structure and Magnetism of GdN by First Principles Calculations RSC Advancesnull 米文博、郭载兵、段秀峰、张雪静、白海力Large Negative Magnetoresistance in Reactive Sputtered Polycrystalline GdNx Films Appl. Phys. Lett. null米文博、杨华、程迎春、陈贵峰、白海力Magnetic and Electronic Properties ofFe3O4/Graphene Heterostructures: First Principles Perspective J. Appl. Phys.null段秀峰、米文博、郭载兵、白海力Magnetoresistance and Anomalous Hall Effect of Reactive Sputtered Polycrystalline Ti1?xCrxN Films Thin Solid Filmsnull米文博、郭载兵、封秀平、白海力Reactively Sputtered Epitaxial γ'-Fe4N Films: Surface Morphology, Microstructure, Magnetic and Electrical Transport Propertie Acta Materialianull段秀峰、米文博、郭载兵、白海力 A Comparative Study of Transport Properties in Polycrystalline and Epitaxial Chromium Nitride Films J. Appl. Phys.null杨华、程迎春、陈贵峰、米文博、白海力Magnetic and Electronic Properties of Cu1-xFexO from First Principles Calculations RSC Advancesnull米文博、郭载兵、王清晓、杨洋、白海力Charge Ordering in Reactive Sputtered (100) and(111) Oriented Epitaxial Fe3O4 Films Scripta Materialianull杨华、金朝、米文博、白海力Electronic and Magnetic Structure of Fe3O4/BiFeO3 Multiferroic Superlattices: First Principles Calculations J. Appl. Phys.null杨华、米文博、白海力、程迎春Electronic and Optical Properties of New Multifunctional Materials via Half-substituted HEMATITE: First Principles Calculatio RSC Advancesnull 王晓姹、马力、米文博Positive Magnetoresistance in Amorphous Ni-CNx/p-Si Heterostructure Appl. Phys. Exp.null段秀峰、米文博、郭载兵、白海力Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti1?xCrxN films Acta Materialianull米文博、杨华、程迎春、白海力Ferromagnetic half-metallic characteristic in bulkNi0.5M0.5O (M=Cu, Zn and Cd): A GGA+U study Solid State Commun.null米文博、封秀平、段秀峰、杨华、李岩、白海力Microstructure, magnetic and electrical transport properties of polycrystalline γ'-Fe4N films Thin Solid Filmsnull米文博, 封秀平, 白海力Magnetic properties and Hall effect of reactive sputtered iron nitride nanocrystalline films Journal of Magnetism and Magnetic Materialsnull米文博, 金晶, 白海力Enhanced magnetic properties of annealed Fe48Pt52-C composite films by N incorporation Physica Status Solidi Anull封秀平, 米文博, 白海力Polycrystalline iron nitride films fabricated by reactivefacing-target sputtering: structure, magnetic and electrical transport properties Journal of Applied Physicsnull米文博, 何琲, 李志青, 吴萍, 姜恩永, 白海力Structure and magnetic properties ofN-doped Fe-C granular films Journal of Physics D: Applied Physicsnull省部级以上获奖白海力、米文博、王晓姹、刘宜伟、姜恩永铁磁性复合薄膜的制备、结构和物性研究天津市自然科学奖二等奖2013-03-26知识产权米文博, 叶天宇, 白海力铬掺杂氮化钛磁性半导体多晶薄膜的制备方法中国1米文博, 白海力具有大的霍尔效应的氮化铁薄膜的制备方法中国2米文博,段秀峰,白海力一种具有大磁电阻效应的GdN薄膜及制备方法中国5米文博,金朝,白海力具有电流调控磁电阻效应的Fe3O4/p-Si结构及制备方法中国4 米文博,段秀峰,白海力具有低温磁电阻效应的外延Ti0.53Cr0.47N薄膜材料及制备方法中国3学术专著(米文博王晓姹), 自旋电子学基础, 天津大学出版社2013-05-01戴伍圣纵向课题经费课题名称计算有效作用量、真空能和计数函数的新途径及其在量子场论、统计力学和谱问题中的应用2011-01-01--2013-12-01 负责人:戴伍圣科技计划:国家自然科学基金委拨款单位:国家自然科学基金委合同经费:28课题名称自引力天体物理系统的非广延统计力学研究2007-01-01--2009-12-31负责人:杜九林科技计划:国家自然科学基金委拨款单位:国家自然科学基金委合同经费:28课题名称量子纠缠/ 贝尔不等式及其相关2007-01-01--2009-12-31 负责人:陈景灵科技计划:国家自然科学基金委拨款单位:国家自然科学基金委合同经费:20期刊、会议论文刘彤,李文都,戴伍圣Scattering theory without large-distance asymptotics JHEPnull 戴伍圣,谢汨Calculating statistical distributions from operator relations The statistical distributions of various intermediate statisti Annals of Physicsnull庞海,戴伍圣,谢汨Relation between heat kernel method and scattering spectral method ull邱荣涛,戴伍圣,谢汨Mean first-passage time of quantum transition processes Physica.Anull刘彤,张萍,戴伍圣,谢汨An intermediate distribution between Gaussian and Cauchy distributions Physics Anull庞海, 戴伍圣, 谢汨The pressure exerted by a confined ideal gas J. Phys. Anull本文内容摘自《天津大学理学院普通物理+量子力学考研红宝书》,更多考研资料可登陆网站下载!。
Electronic transport in two dimensional graphene
arXiv:1003.4731v2 [cond-mat.mes-hall] 5 Nov 2010
(Dated: November 9, 2010)
We provide a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures. A salient feature of our review is a critical comparison between carrier transport in graphene and in two-dimensional semiconductor systems (e.g. heterostructures, quantum wells, inversion layers) so that the unique features of graphene electronic properties arising from its gapless, massless, chiral Dirac spectrum are highlighted. Experiment and theory as well as quantum and semi-classical transport are discussed in a synergistic manner in order to provide a unified and comprehensive perspective. Although the emphasis of the review is on those aspects of graphene transport where reasonable consensus exists in the literature, open questions are discussed as well. Various physical mechanisms controlling transport are described in depth including long-range charged impurity scattering, screening, short-range defect scattering, phonon scattering, many-body effects, Klein tunneling, minimum conductivity at the Dirac point, electron-hole puddle formation, p-n junctions, localization, percolation, quantum-classical crossover, midgap states, quantum Hall effects, and other phenomena.
科技英语翻译
1. This type of spring is extensively used in electrical instruments, and deserves specialconsideration.这种弹簧广泛应用于电工仪表中,因此值得专门考虑一下。
(时态)2. If we had known the properties of the material, we should have made full use of it.要是当时了解这种材料的特性的话,我们就会充分利用它了。
(虚拟语气)3. Let P represent the energy which a machine transforms into useful work, and T the totalinput work, the efficiency of the engine can be expressed as P/T.假设 P 表示机器已经变成有用功的能量, T 表示总输入功,那么,发电机的效率可以表示为 P/T。
4. Attention must be paid to the working temperature of the machine.应当注意机器的工作温度。
(被动语态)5. The solar wind grossly distorts the earth's magnetic field, dragging it out to a long tail.太阳风使地球磁场的形状发生很大的变化,将它向外拉牵,扯出一条长尾。
6. Television is the transmission and reception of images of moving objects by radio waves.电视通过无线电波发射和接受各种活动物体的图像。
(名词化结构)7. An understanding of the essential character of scientific investigation is best acquiredfrom the study of a representative particular science.要了解科学研究最本质的特点,最好是对特定的典型学科进行研究。
The Impact of Transportation on the Environment
**The Impact of Transportation on the Environment**In the grand tapestry of modern civilization, transportation serves as the lifeblood that keeps our societies flowing and economies thriving. Yet, this indispensable aspect of our existence comes with a heavy environmental price tag.The transportation sector's influence on the environment is multi-faceted and far-reaching. Consider the emissions from automobiles, which contribute significantly to air pollution. The noxious gases released by millions of vehicles on our roads daily not only harm human health but also have a detrimental effect on the quality of our air. In cities like Beijing and Los Angeles, smog often blankets the sky, a visible reminder of the toll taken by our reliance on cars and trucks.Shipping, too, leaves its mark. The large container ships that traverse the world's oceans burn vast amounts of fossil fuels, releasing greenhouse gases and contributing to climate change. Moreover, the accidental spills of oil from these vessels can cause catastrophic damage to marine ecosystems, destroying habitats and endangering countless species.Aviation is another major contributor. The high-altitude emissions from airplanes have a unique and long-lasting impact on the atmosphere. For instance, the contrails left by planes can trap heat and exacerbate global warming.However, all is not lost. Efforts are underway to mitigate these negative impacts. The development of electric vehicles is a promising step forward. Countries like Norway have made significant progress in promoting the adoption of electric cars, reducing local air pollution and dependence on fossil fuels.Public transportation systems, such as subways and buses, when utilized effectively, can significantly reduce the number of individual vehicles on the road, thereby decreasing emissions. Additionally, advancements in fuel efficiency and the exploration of alternative fuels like hydrogen offer hope for a cleaner future.As Mahatma Gandhi said, "The earth provides enough to satisfy every man's needs, but not every man's greed." We must strike a balance between our transportation needs and the well-being of our planet.In conclusion, the impact of transportation on the environment isprofound, but with conscious choices and technological innovations, we can chart a course towards a more sustainable future. It is our responsibility to ensure that our mobility does not come at the expense of the health and vitality of our Earth. Let us strive for a world where transportation is efficient, clean, and harmonious with nature.。
钾离子电池有机小分子优化策略
钾离子电池有机小分子优化策略1.随着钾离子电池的发展,有机小分子的优化策略变得愈发重要。
With the development of potassium ion batteries, the optimization strategy of organic small molecules has become increasingly important.2.有机小分子的设计和合成对钾离子电池的性能具有重要影响。
The design and synthesis of organic small molecules havea significant impact on the performance of potassium ion batteries.3.通过调控有机小分子的结构和电化学性质,提高钾离子电池的循环寿命。
By controlling the structure and electrochemicalproperties of organic small molecules, the cycling life of potassium ion batteries can be improved.4.选择合适的有机小分子作为阳极和阴极材料是钾离子电池优化的重要方向之一。
Selecting suitable organic small molecules as anode and cathode materials is an important direction for optimizing potassium ion batteries.5.有机小分子的合成方法对于提高钾离子电池的能量密度至关重要。
The synthesis methods of organic small molecules are crucial for improving the energy density of potassium ion batteries.6.利用计算预测方法,设计出具有优异性能的有机小分子成为钾离子电池研究的热点。
pt 原子的d带中心升高,的英文
pt 原子的d带中心升高,的英文The Elevation of the d-Band Center in Pt Atoms.The concept of the d-band center, a fundamental property of transition metal atoms like platinum (Pt), plays a crucial role in understanding their electronic structure and interaction with other atoms or molecules. The d-band center represents the average energy level of the d-orbitals, which are a set of five orbitals that can accommodate electrons with specific quantum numbers. In Pt atoms, the position of the d-band center is a key determinant of its chemical reactivity, catalytic activity, and electronic transport properties.When we talk about the elevation of the d-band center in Pt atoms, we are referring to a shift in the average energy level of these d-orbitals towards higher energies. This shift can be caused by various factors, such as changes in the atomic environment, alloying with other metals, or the application of external fields.Understanding the mechanisms that lead to this shift andits consequences is essential for optimizing the performance of Pt-based materials in a wide range of applications.Factors Influencing the d-Band Center.1. Atomic Environment: The local atomic environment hasa significant impact on the d-band center. For instance, the presence of ligands or neighboring atoms can influence the energy levels of the d-orbitals through electron donation or backdonation processes.2. Alloying: Alloying Pt with other metals can lead to changes in the d-band center. The interaction between Pt and the alloying metal can affect the electronic structure of Pt, resulting in a shift of the d-band center.3. External Fields: The application of externalelectric or magnetic fields can modify the energy levels of the d-orbitals, thereby affecting the d-band center.Consequences of d-Band Center Elevation.1. Catalytic Activity: The catalytic activity of Pt is closely related to the position of the d-band center. Ashift in the d-band center can enhance or suppresscatalytic reactions, depending on the specific reaction and the desired outcome.2. Electronic Transport Properties: The conductivityand other electronic transport properties of Pt areaffected by the d-band center. Elevation of the d-band center can lead to changes in electron mobility and hencethe overall electronic behavior.3. Interactions with Other Materials: The interaction between Pt and other materials, such as adsorbates or semiconductors, is strongly influenced by the d-band center. Elevation of the d-band center can modify the binding energetics and electronic structure at the interface.Applications.The elevation of the d-band center in Pt atoms finds applications in various fields such as catalysis, energy conversion and storage, and materials science. By understanding and controlling the d-band center, researchers can tune the properties of Pt-based materials to optimize their performance in specific applications.Conclusion.The elevation of the d-band center in Pt atoms is a fundamental phenomenon that has profound implications for the properties and applications of Pt-based materials. By exploring the mechanisms that govern this shift and its consequences, we can gain insights into the electronic structure and behavior of Pt and other transition metals, leading to the development of improved materials for various technological applications.(Note: This article provides a general overview of the topic, but it may not reach the minimum word count of 1000 words. You can expand upon the different sections, delvedeeper into specific aspects, or include additional related information to meet the desired length.)。
水凝胶电解质英文缩写
水凝胶电解质英文缩写Water-based gel electrolytes have become a topic of increasing interest in the field of energy storage and conversion due to their unique properties and potential applications. These electrolytes are composed of a polymeric or inorganic matrix that is swollen with an aqueous electrolyte solution, creating a soft and flexible material. The presence of water in the gel structure provides several advantages, including improved ionic conductivity, enhanced safety, and the potential for environmentally-friendly manufacturing processes.One of the primary advantages of water-based gel electrolytes is their high ionic conductivity. The aqueous electrolyte solution within the gel structure allows for the efficient transport of ions, enabling faster charge and discharge rates in energy storage devices such as batteries and supercapacitors. This high ionic conductivity is particularly important in applications where rapid energy delivery or storage is required, such as in electric vehicles or renewable energy systems.Moreover, the presence of water in the gel electrolyte can enhance the safety of energy storage devices. Traditional solid-state or organic liquid electrolytes can be flammable or volatile, posing a potential fire hazard. In contrast, water-based gel electrolytes are generally non-flammable and less prone to thermal runaway reactions, reducing the risk of fire or explosion. This improved safety profile is crucial in applications where safety is a paramount concern, such as in consumer electronics or medical devices.Another key benefit of water-based gel electrolytes is the potential for environmentally-friendly manufacturing processes. The use of water as the solvent, instead of organic solvents, can significantly reduce the environmental impact of the manufacturing process. Additionally, the gel-like nature of these electrolytes can simplify the fabrication process, as they can be easily coated or printed onto electrodes, enabling more efficient and cost-effective production methods.Despite these advantages, the development of water-based gel electrolytes also poses several challenges. One of the primary challenges is the need to maintain the stability and mechanical properties of the gel structure under various operating conditions, such as temperature, pressure, and chemical exposure. The gel matrix must be designed to withstand these stresses without compromising its ionic conductivity or other desirable properties.Another challenge is the optimization of the water content in the gel electrolyte. While a higher water content can improve ionic conductivity, it can also lead to issues such as reduced electrochemical stability, electrode compatibility, and mechanical integrity. Researchers are actively exploring ways to balance the water content and other components in the gel electrolyte to achieve the desired performance and stability.Furthermore, the integration of water-based gel electrolytes into energy storage devices requires careful consideration of the compatibility with other device components, such as the electrodes and packaging materials. Ensuring seamless integration and overall device performance is a critical aspect of the development of these electrolytes.Despite these challenges, the research and development of water-based gel electrolytes have progressed significantly in recent years. Researchers have explored various polymer matrices, such as polyacrylic acid, polyvinyl alcohol, and chitosan, as well as inorganic materials like silica and clay, to create stable and conductive gel electrolytes. Additionally, the incorporation of additives, such as ionic liquids or nanoparticles, has been investigated to further enhance the performance and stability of these electrolytes.As the demand for sustainable and safe energy storage technologies continues to grow, the development of water-based gel electrolytes has become increasingly important. These electrolytes have the potential to contribute to the advancement of energy storage devices, enabling improved performance, safety, and environmental compatibility. With ongoing research and optimization, water-based gel electrolytes are poised to play a significant role in the future of energy storage and conversion technologies.。
Wien2k软件简介
•w2web (at first startup you will be asked for username/
password, port-number, (master-)hostname. creates
~/.w2web directory)
•use your browser and connect to the (master) host:7890
9
如何运行?
WIEN2k consists of many independent F90 programs, which are linked together via C-shell scripts.
Each „case“ runs in his own directory ./case
11
12
International co-operations
More than 500 user groups worldwide 25 industries (Canon, Eastman, Exxon, Fuji, A.D.Little, Mitsubishi, Motorola, NEC, Norsk Hydro, Osram, Panasonic, Samsung, Sony, Sumitomo). Europe: (ETH Zürich, MPI Stuttgart, Dresden, FHI Berlin, DESY, TH Aachen, ESRF, Prague, Paris, Chalmers, Cambridge, Oxford) America: ARG, BZ, CDN, MX, USA (MIT, NIST, Berkeley, Princeton, Harvard, Argonne NL, Los Alamos b., Penn State, Georgia Tech, Lehigh, Chicago, SUNY, UC St.Barbara, Toronto) far east: AUS, China, India, JPN, Korea, Pakistan, Singapore,Taiwan (Beijing, Tokyo, Osaka, Sendai, Tsukuba, Hong with WIEN2k - III
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Electric Transport Properties of the p53 Gene and the Effects of Point Mutations
arXiv:0710.1676v1 [q-bio.GN] 9 Oct 2007
It is found that in contrast to other kind of mutation defects, cancerous mutations result in much weaker changes of CT efficiency. Given the envisioned role played by CT in the DNA-repairing mechanism, our theoretical results suggest an underlying physical explanation at the origin of carcinogenesis.
L
A T
εi
εi
ti ti εi
ti εi
τ =1
A
G C
τ =2
T
ti ti1 ε i1 t12 ti 2 ε i2
ti εi
G
C
(a)
(b)
HFB =
i=1 q=↑,↓
(−ti |i i + 1| − tq |i, q i| i +εi |i i| + εq |i, q i i, q|) + h.c. (1)
Received XXXX, revised XXXX, accepted XXXX Published online XXXX PACS 87.15.Aa, 87.14.Gg, 87.19.Xx
∗
Corresponding author: e-mail ctshih@, Phone +886-4-23590121 ext. 3474, Fax +886-4-23594643
substituted by another — with distributions along the DNA sequence that are highly non-uniform [11]. Each point mutation can be described by two parameters (k, s), respectively giving the mutation position k on the sequence and the nucleotide type s (either A, C, G, or T) substituting the original one. The most frequent mutation locations found in the cancer cells are named mutation “hotspots”. From the International Agency for Research on Cancer (IARC) database [11], it is found that most hotspots of p53 are located in the exons 5 ∼ 8 in the interval from the 13055th to the 14588th nucleotide. The 13203th base pair has the highest frequency of occurrence (1055 times) and more than 80% of the total 23544 cases in the database occur on 1% of the base pairs of the p53. The mutation (k, s) is said to be “cancerous” (“noncancerous”) if it is (not) found in the IARC database. In this paper, the effects of all possible point mutations on CT are studied for the p53 gene using appropriate tightbinding models and energy parameters which are know to reproduce experimental results or first principle calculations [12,13]. We find that anomalously small changes of CT efficiency modulations coincide with cancerous mutations. In contrast, non-cancerous mutations result, on average, in much larger changes of the CT properties. From
Figure 1 Schematic models for hole transport in DNA.
where each lattice point stands for a nucleotide base pair of the chain for i = 1, . . . , L. ti is the hopping amplitude between ith and i + 1th base pairs and εi is the onsite potential of the ith base pair. tq with q =↑, ↓ is the i hopping amplitude between the ith base pair and its neighboring (upper and lower) backbone sites |i, q . The onsite energy at the sites |i, q is given by εq . The model will be i reduced to the simplest one-ladder (1L) model if the sugarphosphate backbone sites |i, q of DNA are absent, that is, tq = εq = 0 [14,15,16,17]. This one-channel model is i i shown schematically in Fig. 1(a). To account for the full double-strand nature of DNA, an alternative two-channel ladder model (LM) shown in Fig. 1(b) is also used. The corresponding Hamiltonian is given as [18]
¨ Chi-Tin Shih1,* , Rudolf A. Romer2 , Stephan Roche3
1 2 3
Department of Physics, Tunghai University, 40704 Taichung, Taiwan Department of Physics and Centre for Scientific Computing, University of Warwick, Gibbet Hill Road, Coventry, CV4 7AL, UK CEA/DSM/DRFMC/SPSMS/GT, 17 avenue des Martyrs, 38054 Grenoble, France
In this work, charge transport (CT) properties of the p53 gene are numerically studied by the transfer matrix method, and using either single or double strand effective tight-binding models. A statistical analysis of the consequences of known p53 point mutations on CT features is performed.
Copyright line will be provided by the publisher
2
Chi-Tin Shih et al.: Electric Transport Properties. . .
this analysis, we propose a new scenario for understanding the underlying origin of how cancerous mutations shortcut the DNA damage/repair processes.
Besides, given that the development of cancers is closely related to the DNA damage/repair mechanism [8], the modifications of CT properties when mutations start to develop is therefore an important question to deepen. A most important gene in cancer research is p53 also known as the “guardian of the genome” [9]. Indeed, p53 encodes the tumor suppressor T P 53 protein that suppresses the tumor development by activating the DNA repair mechanisms or the cell apoptosis process if DNA reparation is impossible. There are 20303 base pairs in the p53 sequence (NCBI access number X54156). More than 50% of human cancers are related to the mutations of the p53 gene which usually jeopardize the efficient activity of T P 53 [10]. Most of the cancerous mutations are point mutations — a base pair