BR-1632AGAN, 规格书,Datasheet 资料
LTC3201EMS;LTC3201EMS#PBF;LTC3201EMS#TR;LTC3201EMS#TRPBF;中文规格书,Datasheet资料
I OUT = 100mAI IN = 205mAV IN = 3.6V1/LTC320123201fABSOLUTE AXI U RATI GSW W WU PACKAGE/ORDER I FOR ATIOUUW (Note 1)ELECTRICAL CHARACTERISTICSThe q denotes the specifications which apply over the full operatingtemperature range, otherwise specifications are at T A = 25°C. V IN = 3.6V, C FILTER = C FLY = 0.22µF, C IN = C OUT = 1µF,t MIN to t MAX unless otherwise noted.V IN , V FILTER , V OUT , CP, CM to GND..............–0.3V to 6V D0, D1, D2, FB to GND .................–0.3V to (V IN + 0.3V)V OUT Short-Circuit Duration.............................Indefinite I OUT ......................................................................................150mA Operating Temperature Range (Note 2)...–40°C to 85°C Storage Temperature Range.................–65°C to 150°C Lead Temperature (Soldering, 10 sec)..................300°CORDER PART NUMBER MS PART MARKING T JMAX = 150°CθJA = 130°C/W (1 LAYER BOARD)θJA = 100°C/W (4 LAYER BOARD)Consult LTC Marketing for parts specified with wider operating temperature ranges.LTC3201EMS PARAMETER CONDITIONSMIN TYP MAX UNITSV IN Operating Voltage q2.74.5V V IN Operating Current I OUT = 0mAq 4 6.5mA V IN Shutdown Current D0, D1, D2 = 0V, V OUT = 0V q1µA Open-Loop Output Impedance I OUT = 100mA 8ΩInput Current Ripple I IN = 200mA30mA P-P Output Ripple I OUT = 100mA, C OUT = 1µF 30mV P-PV FB Regulation Voltage D0 = D1 = D2 = V INq 0.570.630.66V V FB DAC Step Size 90mV Switching Frequency Oscillator Free Running1.4 1.8MHzD0 to D2 Input Threshold q 0.4 1.1V D0 to D2 Input Current q–11µA V OUT Short-Circuit Current V OUT = 0V 150mA V OUT Turn-On TimeI OUT = 0mA1msLTVB12345V OUT CP FILTER CM GND109876FB V IN D2D1D0TOP VIEWMS PACKAGE10-LEAD PLASTIC MSOP Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired.Note 2: The LTC3201E is guaranteed to meet performance specifications from 0°C to 70°C. Specifications over the –40°C to 85°C operatingtemperature range are assured by design, characterization and correlation with statistical process controls./3 /4/LTC320153201fAPPLICATIO S I FOR ATIOW UUU Operation (Refer to Simplified Block Diagram)The LTC3201 is a switched capacitor boost charge pump especially designed to drive white LEDs in backlighting applications. The LTC3201’s internal regulation loop maintains constant LED output current by monitoring the voltage at the FB pin. The device has a novel internal filter that, along with an external 0.22µF capacitor, significantly reduces input current ripple. An internal 7-state DAC allows the user to lower the regulation voltage at the FB pin, thus lowering the LED current. To regulate the output current, the user places a sense resistor between FB and GND. The white LED is then placed between V OUT and FB.The value at the FB pin is then compared to the output of the DAC. The charge pump output voltage is then changed to equalize the DAC output and the FB pin. The value of the sense resistor determines the maximum value of the output current.When the charge pump is enabled, a two-phase nonoverlapping clock activates the charge pump switches.The flying capacitor is charged to V IN on phase one of the clock. On phase two of the clock, it is stacked in series with V IN and connected to V OUT . This sequence of charging and discharging the flying capacitor continues at a free run-ning frequency of 1.8MHz (typ) until the FB pin voltage reaches the value of the DAC.In shutdown mode all circuitry is turned off and the LTC3201 draws only leakage current (<1µA) from the V IN supply. Furthermore, V OUT is disconnected from V IN . The LTC3201 is in shutdown when a logic low is applied to all three D0:D2 pins. Note that if V OUT floats to >1.5V,shutdown current will increase to 10µA max. In normal operation, the quiescent supply current of the LTC3201will be slightly higher if any of the D0:D2 pins is driven high with a signal that is below V IN than if it is driven all the way to V IN . Since the D0:D2 pins are high impedance CMOS inputs, they should never be allowed to float.Input Current RippleThe LTC3201 is designed to minimize the current ripple at V IN . Typical charge pump boost converters draw large amounts of current from V IN during both phase 1 and phase 2 of the clocking. If there is a large nonoverlap time between the two phases, the current being drawn from V INcan go down to zero during this time. At the full load of 100mA at the output, this means that the input could potentially go from 200mA down to 0mA during the nonoverlap time. The LTC3201 mitigates this problem by minimizing the nonoverlap time, using a high (1.8MHz)frequency clock, and employing a novel noise FILTER network. The noise filter consists of internal circuitry plus external capacitors at the FILTER and V IN pins. The filter capacitor serves to cancel the higher frequency compo-nents of the noise, while the V IN capacitor cancels out the lower frequency components. The recommended values are 0.22µF for the FILTER capacitor and 1µF for the V IN capacitor. Note that these capacitors must be of the highest possible resonant frequencies. See Layout Considerations.3-Bit DAC for Output Current ControlDigital pins D0, D1, D2 are used to control the output current level. D0 = D1 = D2 = V IN allows the user to program an output LED current that is equal to 0.63V/R SENSE , where R SENSE is the resistor connected to any single LED and connected between FB and ground. Due to the finite transconductance of the regulation loop, for a given diode setting, the voltage at the FB Pin will decrease as output current increases. All LEDs subsequently connected in parallel should then have similar currents. The mismatch-ing of the LED V F and the mismatching of the sense resistors will cause a differential current error between LEDs connected to the same output. Once the sense resistor is selected, the user can then control the voltage applied across that resistor by changing the digital values at D0:D2. This in turn controls the current into the LED.Note that there are only 7 available current states. The 8th is reserved to shutdown. This is the all 0s code. Refer to Table below.D0D1D2FB HIGH HIGH HIGH 0.63V HIGH HIGH LOW 0.54V HIGH LOW HIGH 0.45V HIGH LOW LOW 0.36V LOW HIGH HIGH 0.27V LOW HIGH LOW 0.18V LOW LOW HIGH 0.09V LOWLOWLOWShutdown/LTC320163201fPower EfficiencyThe power efficiency (η) of the LTC3201 is similar to that of a linear regulator with an effective input voltage of twice the actual input voltage. This occurs because the input current for a voltage doubling charge pump is approxi-mately twice the output current. In an ideal regulator the power efficiency would be given by:η===P P V I V I V V OUT IN OUT OUT IN OUTOUTIN ••22At moderate to high output power the switching lossesand quiescent current of LTC3201 are relatively low. Due to the high clocking frequency, however, the current used for charging and discharging the switches starts to reduce efficiency. Furthermore, due to the low V F of the LEDs,power delivered will remain low.Short-Circuit/Thermal ProtectionThe LTC3201 has short-circuit current limiting as well as overtemperature protection. During short-circuit condi-tions, the output current is limited to typically 150mA.On-chip thermal shutdown circuitry disables the charge pump once the junction temperature exceeds approxi-mately 160°C and re-enables the charge pump once the junction temperature drops back to approximately 150°C.The LTC3201 will cycle in and out of thermal shutdown indefinitely without latchup or damage until the short-circuit on V OUT is removed.V OUT Capacitor SelectionThe style and value of capacitors used with the LTC3201determine several important parameters such as output ripple, charge pump strength and minimum start-up time.To reduce noise and ripple, it is recommended that low ESR (<0.1Ω) capacitors be used for C FILTER , C IN , C OUT .These capacitors should be ceramic.The value of C OUT controls the amount of output ripple.Increasing the size of C OUT to 10µF or greater will reduce the output ripple at the expense of higher turn-on times and start-up current. See the section Output Ripple. A 1µF C OUT is recommended.V IN , V FILTER Capacitor SelectionThe value and resonant frequency of C FILTER and C IN greatly determine the current noise profile at V IN . C FILTER should be a high frequency 0.22µF capacitor with a reso-nant frequency over 30MHz. Input capacitor C IN should be a 1µF ceramic capacitor with a resonant frequency over 1MHz. The X5R capacitor is a good choice for both. The values of C FILTER (0.22µF) and C IN (1µF) provide optimum high and low frequency input current filtering. A higher filter cap value will result in lower low frequency input current ripple, but with increased high frequency ripple.The key at the FILTER node is that the capacitor has to be very high frequency. If capacitor technology improves the bandwidth, then higher values should be used. Similarly,increasing the input capacitor value but decreasing its resonant frequency will not really help. Decreasing it will help the high frequency performance while increasing the low frequency current ripple.Direct Connection to BatteryDue to the ultra low input current ripple, it is possible to connect the LTC3201 directly to the battery without using regulators or high frequency chokes.Flying Capacitor SelectionWarning: A polarized capacitor such as tantalum or alumi-num should never be used for the flying capacitor since its voltage can reverse upon start-up. Low ESR ceramic capacitors should always be used for the flying capacitor.The flying capacitor controls the strength of the charge pump. In order to achieve the rated output current it is necessary to have at least 0.22µF of capacitance for the flying capacitor. Capacitors of different materials lose their capacitance with higher temperature and voltage at different rates. For example, a ceramic capacitor made of X7R material will retain most of its capacitance from –40°C to 85°C whereas a Z5U and Y5V style capacitor will lose considerable capacitance over that range. Z5U and Y5V capacitors may also have a very strong voltage coefficient causing them to lose 60% or more of their capacitance when the rated voltage is applied. Therefore,when comparing different capacitors it is often moreAPPLICATIO S I FOR ATIOW UUU /LTC320173201fappropriate to compare the achievable capacitance for a given case size rather than discussing the specified ca-pacitance value. For example, over the rated voltage and temperature, a 1µF, 10V, Y5V ceramic capacitor in an 0603case may not provide any more capacitance than a 0.22µF 10V X7R available in the same 0603 case. The capacitor manufacturer’s data sheet should be consulted to deter-mine what value of capacitor is needed to ensure 0.22µF at all temperatures and voltages.Below is a list of ceramic capacitor manufacturers and how to contact them:AVX (843) Kemet (864) Murata (770) Taiyo Yuden (800) Vishay(610) 644-1300Open-Loop Output ImpedanceThe theoretical minimum open-loop output impedance of a voltage doubling charge pump is given by:R V V I FCOUT MIN IN OUT OUT ()–==21where F if the switching frequency (1.8MHz typ) and C isthe value of the flying capacitor. (Using units of MHz and µF is convenient since they cancel each other). Note that the charge pump will typically be weaker than the theoreti-cal limit due to additional switch resistance. Under normal operation, however, with V OUT ≈ 4V, I OUT < 100mA,V IN > 3V, the output impedance is given by the closed-loop value of ~0.5Ω.Output RippleThe value of C OUT directly controls the amount of ripple for a given load current. Increasing the size of C OUT will reduce the output ripple at the expense of higher minimum turn-on time and higher start-up current. The peak-to-peak output ripple is approximated by the expression:V I F C RIPPLE P P OUT OUT()•−≅2 F is the switching frequency (1.8MHz typ).Loop StabilityBoth the style and the value of C OUT can affect the stability of the LTC3201. The device uses a closed loop to adjust the strength of the charge pump to match the required output current. The error signal of this loop is directly stored on the output capacitor. The output capacitor also serves to form the dominant pole of the loop. To prevent ringing or instability, it is important for the output capaci-tor to maintain at least 0.47µF over all ambient and operating conditions.Excessive ESR on the output capacitor will degrade the loop stability of the LTC3201. The closed loop DC imped-ance is nominally 0.5Ω. The output will thus change by 50mV with a 100mA load. Output capacitors with ESR of 0.3Ω or greater could cause instability or poor transient response. To avoid these problems, ceramic capacitors should be used. A tight board layout with good ground plane is also recommended.Soft-StartThe LTC3201 has built-in soft-start circuitry to prevent excessive input current flow at V IN during start-up. The soft-start time is programmed at approximately 30µyout ConsiderationsDue to the high switching frequency and large transient currents produced by the LTC3201, careful board layout is necessary. A true ground plane is a must. To minimize high frequency input noise ripple, it is especially important that the filter capacitor be placed with the shortest dis-tance to the LTC3201 (1/8 inch or less). The filter capacitor should have the highest possible resonant frequency.Conversely, the input capacitor does not need to be placed close to the pin. The input capacitor serves to cancel out the lower frequency input noise ripple. Extra inductance on the V IN line actually helps input current ripple. Note that if the V IN trace is lengthened to add parasitic inductance,it starts to look like an antenna and worsen the radiated noise. It is recommended that the filter capacitor be placed on the left hand side next to Pin 3. The flying capacitor can then be placed on the top of the device. It is also importantAPPLICATIO S I FOR ATIOW UUU Information furnished by Linear Technology Corporation is believed to be accurate and reliable.However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-tation that the interconnection of its circuits as described herein will not infringe on existing patent rights./8Linear Technology Corporation1630 McCarthy Blvd., Milpitas, CA 95035-7417(408) 432-1900 qFAX: (408) 434-0507 q © LINEAR TECHNOLOGY CORPORA TION 2001/分销商库存信息:LINEAR-TECHNOLOGYLTC3201EMS LTC3201EMS#PBF LTC3201EMS#TR LTC3201EMS#TRPBF。
ACCESS 2操作手册
目录 i
Access 2 使用说明
5 样品管理器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-1
பைடு நூலகம்
Access 2 使用说明
目录
1 系统概述 .....................................................1-1
• 用途.....................................................1-1 • 手册内容.................................................1-1 • 参考资料.................................................1-1 • 技术支持.................................................1-1 • 系统描述.................................................1-2 • 系统模式.................................................1-3 • 系统状态按钮.............................................1-3 • 系统命令按钮.............................................1-5 • 主菜单工作流.............................................1-6 • 预防措施和危险...........................................1-7 • 系统规格和特征..........................................1-11 • 电气要求................................................1-13 • 安装....................................................1-15 • 保修....................................................1-15
安森美 AO9926 双 N 通道增强型 MOSFET 器件数据表说明书
SymbolV DS V GSI DM T J , T STGSymbolTyp Max 5662.581110R θJL4048Absolute Maximum Ratings T A =25°C unless otherwise noted Parameter MaximumUnits Drain-Source Voltage 20V Gate-Source Voltage ±8V AT A =70°C 4.2Pulsed Drain Current B20Continuous DrainCurrent AT A =25°C I D 5T A =70°C1.28W Power DissipationT A =25°C P D 2Steady-State °C/W Junction and Storage Temperature Range -55 to 150°CThermal Characteristics Maximum Junction-to-Lead CSteady-State°C/WParameterUnits Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W Maximum Junction-to-Ambient A AO9926Dual N-Channel Enhancement Mode Field Effect TransistorFeb 2003FeaturesV DS (V) = 20V I D = 5AR DS(ON) < 50m Ω (V GS = 4.5V)R DS(ON) < 65m Ω (V GS = 2.5V)R DS(ON) < 90m Ω (V GS = 1.8V)General DescriptionThe AO9926 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch.G1S1G2S2D1D1D2D212348765G1D1S1G2D2S2SOIC-8Alpha & Omega Semiconductor, Ltd.查询AO9926供应商捷多邦，专业PCB打样工厂，24小时加急出货SymbolMin TypMaxUnits BV DSS 20V 1T J =55°C5I GSS 100nA V GS(th)0.40.61V I D(ON)15A 4050T J =125°C56705465m Ω7290m Ωg FS 11S V SD 0.761V I S2A C iss 436pF C oss 66pF C rss 44pF R g3ΩQ g 5.54nC Q gs 1.26nC Q gd 0.52nC t D(on)5ns t r 7ns t D(off)29ns t f 6.2ns t rr 13.7ns Q rr3.8nCI F =5A, dI/dt=100A/µsI F =5A, dI/dt=100A/µsElectrical Characteristics (T J =25°C unless otherwise noted)ParameterConditions STATIC PARAMETERS Drain-Source Breakdown Voltage I D =250µA, V GS =0V I DSS Zero Gate Voltage Drain Current V DS =16V, V GS =0VµA Gate-Body leakage current V DS =0V, V GS =±8V Gate Threshold Voltage V DS =V GS I D =250µA On state drain currentV GS =10V, V DS =5V R DS(ON)Static Drain-Source On-ResistanceV GS =4.5V, I D =5Am ΩV GS =1.8V, I D =2AV GS =2.5V, I D =4A V GS =0V, V DS =0V, f=1MHzForward TransconductanceV DS =5V, I D =5ADiode Forward Voltage I S =1A,V GS =0V Maximum Body-Diode Continuous CurrentDYNAMIC PARAMETERS Input Capacitance V GS =0V, V DS =10V, f=1MHz Output Capacitance Reverse Transfer Capacitance Turn-On Rise Time Turn-Off DelayTime Gate resistanceBody Diode Reverse Recovery TimeBody Diode Reverse Recovery Charge Turn-Off Fall TimeSWITCHING PARAMETERS Total Gate Charge V GS =4.5V, V DS =10V, I D =5AGate Source Charge Gate Drain Charge Turn-On DelayTime V GS =5V, V DS =10V, R L =2Ω, R GEN =6ΩA: The value of R θJA is measured with the device mounted on 1in 2FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.Alpha & Omega Semiconductor, Ltd.。
ADVANTEST U3741 U3751 U3771 U3772 说明书
MANUAL NUMBER C Printed in JapanADVANTEST CORPORATIONAll rights reserved .U3700 SeriesUser’s GuideFOE-8440185H00First printing November 20, 2004Applicable ModelsU3741U3751U3771U37722004Certificate of ConformityThis is to certify, thatcomplies with the provisions of the EMC Directive 89/336/EEC (All of these factors arerevised by 91/263/EEC,92/31/EEC,93/68/EEC) in accordance with EN61326and Low V oltage Directive 73/23/EEC (All of these factors are revised by 93/68/EEC)in accordance with EN61010.ADVANTEST Corp.ROHDE&SCHWARZ Tokyo, Japan Europe GmbHMunich, Germanyinstrument, type, designation3700.05Spectrum AnalyzerU3700 SeriesNo. CR B00CR-1有毒有害物质含量信息说明书•本有毒有害含量含量说明内容是为了贯彻[电子信息产品污染控制管理办法]而编制的。
This document is made for Chinese Administration on the Control of Pollution Caused by Electronic In-formation Products, unofficially called "China-RoHS".この文書は、中国の「電子情報製品汚染防止管理弁法」のための文書です。
OPA1632中文资料
proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.PIN CONFIGURATIONTop ViewPACKAGING INFORMATIONOrderable DeviceStatus (1)Package Type Package DrawingPins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)OPA1632D ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM OPA1632DG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM OPA1632DGNACTIVEMSOP-Power PAD DGN880Green (RoHS &no Sb/Br)CU NIPDAULevel-1-260C-UNLIMOPA1632DGNG4ACTIVE MSOP-Power PAD DGN 880Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIMOPA1632DGNR ACTIVE MSOP-Power PAD DGN 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIMOPA1632DGNRG4ACTIVE MSOP-Power PAD DGN 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIMOPA1632DR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM OPA1632DRG4ACTIVESOICD82500Green (RoHS &no Sb/Br)CU NIPDAULevel-1-260C-UNLIM(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan -The planned eco-friendly classification:Pb-Free (RoHS),Pb-Free (RoHS Exempt),or Green (RoHS &no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1)lead-based flip-chip solder bumps used between the die and package,or 2)lead-based die adhesive usedbetween the die and leadframe.The component is otherwise considered Pb-Free(RoHS compatible)as defined above.Green (RoHS &no Sb/Br):TI defines "Green"to mean Pb-Free (RoHS compatible),and free of Bromine (Br)and Antimony (Sb)based flame retardants (Br or Sb do not exceed 0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.PACKAGE OPTION ADDENDUM12-Sep-2006Addendum-Page 1IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. T esting and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. T o minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI.Reproduction of information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for such altered documentation.Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. Following are URLs where you can obtain information on other Texas Instruments products and application solutions:Products ApplicationsAmplifiers Audio /audioData Converters Automotive /automotiveDSP Broadband /broadbandInterface Digital Control /digitalcontrolLogic Military /militaryPower Mgmt Optical Networking /opticalnetwork Microcontrollers Security /securityLow Power Wireless /lpw Telephony /telephonyVideo & Imaging /videoWireless /wirelessMailing Address:Texas InstrumentsPost Office Box 655303 Dallas, Texas 75265Copyright 2006, Texas Instruments Incorporated。
BR254中文资料
VOLTAGE RANGE 50 to 1000 Volts CURRENT 25 AmperesFEATURES*Superior thermal desing *300 amperes surge rating*1/4//universal faston terminal * Hole thru for # 8 screw* UL listed the recognized component directory, file #E94233* Epoxy: Device has UL flammability classification 94V-OMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSRatings at 25 o C ambient temperature unless otherwise specified.Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20%.MAXIMUM RATINGS (At T A = 25o C unless otherwise noted)ELECTRICAL CHARACTERISTICS (At T A = 25o C unless otherwise noted)NOTE: Suffix ”W” for wire typeBR-25BR-25W2001-5RATINGSMaximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking VoltagePeak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method)Operating and Storage Temperature RangeSYMBOL V RRM V DC I O I FSMT J,T STGV RMS Volts Volts Amps 25.0300-55 to + 175CUNITS Maximum Average Forward Rectified Output Current at Tc = 55o C 5020040010060080010003514028070420560700502004001006008001000Volts AmpsBR2505BR152BR254BR251BR256BR258BR2510DC Blocking Voltage per element CHARACTERISTICSV F SYMBOL I RUNITS1.10.5mAmps uAmps Maximum Reverse Current at Rated Maximum Forward Voltage Drop per element at 12.5A DC Volts @T A = 25oC @T C = 100o C10BR2505BR252BR254BR251BR256BR258BR2510MECHANICAL DATARATING AND CHARACTERISTIC CURVES ( BR2505 THRU BR2510 )PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )I N S T A N T A N E O U S R E V E R S E C U R R E N T , (u A )FIG. 4 - TYPICAL REVERSE CHARACTERISTICS101.0.1.01020406080100120140FIG. 1 - MAXIMUM NON-REPETITIVE FORWARDP E A K F O R W A R D S U R G E C U R R E N T , (A )NUMBER OF CYCLES AT 60HzSURGE CURRENT5004003002001001246810204060801008.3ms Single Half Sine-Wave (JEDEC Method)FIG. 3- TYPICAL INSTANTANEOUS FORWARD I N S T A N T A N E O U S F O R W A R D C U R R E N T , (A )INSTANTANEOUS FORWARD VOLTAGE, (V)100101.0.1.01.8.6.7.9 1.0 1.1 1.2 1.3CHARACTERISTICSFIG. 2 - TYPICAL FORWARD CURRENTA V E R A G E F O R W A R D C U R R E N T , (A )DERATING CURVECASE TEMPERATURE, ( )252015105050100150Single Phase Half Wave 60Hz Indutive or Resistive Load175BR-25BR-25W。
东芝2SA1015管数据表说明书
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)2SA1015Audio Frequency General Purpose Amplifier ApplicationsDriver Stage Amplifier Applications•High voltage and high current: V CEO = −50 V (min),I C = −150 mA (max)•Excellent h FE linearity : h FE (2) = 80 (typ.) at V CE = −6 V, I C = −150 mA:h FE (I C = −0.1 mA)/h FE (I C = −2 mA) = 0.95 (typ.)•Low noise: NF = 1dB (typ.) (f = 1 kHz)•Complementary to 2SC1815.Absolute Maximum Ratings (Ta = 25°C)Characteristics SymbolRatingUnitCollector-base voltage V CBO−50 VCollector-emitter voltage V CEO−50 VEmitter-base voltage V EBO−5 VCollector current I C−150 mABase current I B−50 mACollector power dissipation P C 400mWJunction temperature T j125 °CStorage temperature range T stg−55~125 °CNote: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change in temperature, etc.) may cause this product todecrease in the reliability significantly even if the operating conditions (i.e. operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability testreport and estimated failure rate, etc).Electrical Characteristics (Ta = 25°C)Characteristics Symbol TestCondition MinTyp.Max Unit Collector cut-off current I CBO V CB=−50 V, I E= 0 ⎯ ⎯−0.1μA Emitter cut-off current I EBO V EB=−5 V, I C= 0 ⎯⎯−0.1μAh FE (1)(Note)V CE=−6 V, I C=−2 mA 70 ⎯ 400DC current gainh FE (2)V CE=−6 V, I C=−150 mA 25 80 ⎯Collector-emitter saturation voltage V CE (sat)I C=−100 mA, I B=−10 mA ⎯−0.1 −0.3VBase-emitter saturation voltage V BE (sat)I C=−100 mA, I B=−10 mA ⎯⎯−1.1V Transition frequency f T V CE=−10 V, I C=−1 mA 80 ⎯⎯ MHz Collector output capacitance C ob V CB=−10 V, I E= 0, f = 1 MHz ⎯ 4 7 pF Base intrinsic resistance r bb’V CE=−10 V, I E= 1 mA, f = 30 MHz ⎯ 30 ⎯ΩNoise figure NF V CE=−6 V, I C=−0.1 mA, R G= 10 kΩ,f = 1 kHz⎯ 1.0 10 dBNote: h FE (1) classification O: 70~140, Y: 120~240, GR: 200~400Unit: mmJEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.)RESTRICTIONS ON PRODUCT USE•Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.•This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.•Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.•Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document.•Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.•Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.•The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.•ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITYWHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.•Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. •Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.。
US1B超快恢复整流SMA(DO-214AC)二极管规格书
1Surface Mount Ultrafast RectifierUS1A thru US1M FEATURES•Low profile package•Ideal for automated placement •Glass passivated chip junction •Ultrafast reverse recovery time •Low switching losses, high efficiency •High forward surge capability•Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C•Compliant to RoH S Directive 2002/95/EC and in accordance to WEEE 2002/96/EC•Halogen-free according to IEC 61249-2-21 definitionTYPICAL APPLICATIONSFor use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, and telecommunication.MECHANICAL DATACase: DO-214AC (SMA)Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoH S compliant, and commercial gradeTerminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode endPRIMARY CHARACTERISTICSIF(AV) 1.0 A V RRM 50 V to 1000 VI FSM 30 A t rr 50 ns, 75 ns V F 1.0 V, 1.7 V T J max.150 °CDO-214AC (S MA)MAXIMUM RATINGS (T A = 25°C unless otherwise noted)PARAMETERSYMBOLUS1AUS1BUS1DUS1GUS1JUS1KUS1MUNITMaximum repetitive peak reverse voltage V RRM 501002004006008001000V Maximum RMS voltage V RMS 3570140280420560700V Maximum DC blocking voltageV DC 501002004006008001000V Maximum average forward rectified current at T L = 110 °C I F(AV) 1.0A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated loadI FSM 30A Operating and storage temperature rangeT J , T STG- 55 to + 150°C2Note(1)Pulse test: 300 μs pulse width, 1 % duty cycleNote(1)PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areaRATINGS AND CHARACTERSITICS CURVES(T A = 25 °C unless otherwise noted)Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge CurrentELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETERTEST CONDITIONS SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT Maximum instantaneous forward voltage1.0 AV F (1) 1.01.7V Maximum DC reverse current at rated DC blocking voltage T A = 25 °C I R 10μAT A = 100 °C50Maximum reverse recovery timeI F = 0.5 A, I R = 1.0 A,I rr = 0.25 A t rr 5075ns Typical junction capacitance4.0 V, 1 MHzC J1510pFTHERMAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETERSYMBOL US1AUS1BUS1DUS1G US1JUS1KUS1MUNIT Maximum thermal resistanceR θJA (1)75°C/WR θJL (1)27ORDERING INFORMATION (Example)PREFERRED P/N UNIT WEIGHT (g)PREFERRED PACKAGE CODEBASE QUANTITYDELIVERY MODEUS1J-M3/61T 0.06461T 18007" diameter plastic tape and reel US1J-M3/5AT0.0645AT750013" diameter plastic tape and reelFig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage CharacteristicsFig. 5 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Reverse Leakage Characteristics Fig. 7 - Typical Junction CapacitanceFig. 8 - Typical Transient Thermal Impedance3PACKAGE OUTLINE DIMENSIONS in inches (millimeters)4。
E+H 氨氮在线测定仪CA71AM操作手册中文版
Endress+Hauser
7
检验
Stamolys CA71AM
2.3 证书和认证
2.3.1
认证
一致性声明 产品符合欧共体标准的法律要求。 Endress+Hauser确保贴有 标志的仪表均通过了所需的相关测试。
2.3.2 制造商证书
质量证书 制造商提供的质量证书证明分析仪满足所有相关技术规范的要求，并通过了相关测试。
C 接线端子分配，信号连接，开关触点
D 操作：参数输入与设置 标定 操作菜单 调试
E 维护计划 更换备件和易损件 附件
F 故障排除指南 备件
技术参数
Endress+Hauser
Stamolys CA71AM
目录
1 安全指南 ……………………………… 4
1.1 用途 ……………………………………………… 4 1.2 安装、调试和操作 ……………………………… 4 1.3 操作安全 ………………………………………… 4 1.4 返回 ……………………………………………… 4 1.5 安全图标和符号说明 …………………………… 5
10 技术参数 …………………………… 49
10.1 输入 …………………………………………… 49 10.2 输出 …………………………………………… 49 10.3 电源 …………………………………………… 49 10.4 性能参数 ……………………………………… 50 10.5 环境条件 ……………………………………… 51 10.6 过程条件 ……………………………………… 51 10.7 机械结构 ……………………………………… 51
D
1 ... 500 µg/l NH4-N
Y
IRF7316QTRPBF;中文规格书,Datasheet资料
HEXFET®
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
VDS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25°C TA = 70°C
1 3.0 3.5 4.0 4.5
V DS = -10V 20µs PULSE WIDTH
5.0 5.5 6.0
A
1 0.4 0.6 0.8 1.0
VGS = 0V
1.2
A
1.4
-VGS , Gate-to-Source Voltage (V)
-VSD , Source-to-Drain Voltage (V)
-30 ± 20 -4.9 -3.9 -30 -2.5 2.0 1.3 140 -2.8 0.20 -5.0 -55 to + 150
A
W mJ A mJ V/ ns °C
Thermal Resistance Ratings
Maximum Junction-to-Ambient
Parameter
Symbol
100
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP
10
AM24LC16IN资料
ATC2-Wire Serial 16K-bits (2048 x 8) CMOS Electrically Erasable PROM AM24LC162-Wire Serial 16K-bits (2048 x 8) CMOS Electrically Erasable PROM AM24LC16 Write Operations (Continued)Current Address ReadThe AM24LC16 contains an address counter that maintains the address of the last accessed word, internally incremented by one. Therefore if the previous access (either a read or write operation ) was to address n, the next current address read operation would access data from address n + 1. Upon receipt of the slave address with R/W bit set to one, the AM24LC16 issues an acknowledge and transmits the eight bit data word . The master will not acknowledge the transfer but does generate a stop condition and the AM24LC16 discontinues transmission. (Shown in Figure 6)Random ReadRandom read operations allow the master to access any memory location in a random manner. To perform this type of read operation, first the word address must be set. This is done by sending the word address to the AM24LC16 as part of a write operation. After the word address is sent, the master generates a start condition following the acknowledge. This terminates the write operation, but not before the internal address pointer is set. Then the master issues the control byte again but with R/W bit set to a one. The AM24LC16 will then issue an acknowledge and transmit the eight bit data word. The master will not acknowledge the transfer but does generate a stop condition and the AM24LC16 discontinues transmission. (Shown in Figure 7)Sequential ReadSequential read is initiated in the same way as a random read except that after the AM24LC16 transmits the first data byte, the master issues an acknowledge as opposed to a stop condition in a random read. This directs the AM24LC16 to transmit the next sequentially addressed 8 bit byte (Shown in Figure 8). To provide sequential read the AM24LC16 contains an internal address pointer which is incremented by one at the completion of each operation.Noise ProtectionThe SCL and SDA inputs have filter circuits which suppress noise spikes to assure proper device operation even on a noisy bus.。
FAIRCHILD FQAF16N25C 250V N-Channel MOSFET 数据手册
现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!FQAF16N25CTO-3PFFQAF SeriesG SDNotes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 2.7mH, I AS = 15.6A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 11.4A, di/dt ≤ 300A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%5. Essentially independent of operating temperature/ ∆T J CoefficientI DSS Zero Gate Voltage Drain Current V DS = 250 V, V GS = 0 V ----10µA V DS = 200 V, T C = 125°C ----100µA I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, V DS = 0 V ----100nA I GSSRGate-Body Leakage Current, ReverseV GS = -30 V, V DS = 0 V-----100nAOn CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA 2.0-- 4.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 5.7 A--0.220.27Ωg FSForward TransconductanceV DS = 40 V, I D = 5.7 A (Note 4)--9.7--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz--8301080pF C oss Output Capacitance--170220pF C rssReverse Transfer Capacitance--6889pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 125 V, I D = 15.6 A,R G = 25 Ω(Note 4, 5)--1540ns t r Turn-On Rise Time --130270ns t d(off)Turn-Off Delay Time --135280ns t f Turn-Off Fall Time --105220ns Q g Total Gate Charge V DS = 200 V, I D = 15.6 A,V GS = 10 V(Note 4, 5)--4153.5nC Q gs Gate-Source Charge -- 5.6--nC Q gdGate-Drain Charge--22.7--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----11.4A I SM Maximum Pulsed Drain-Source Diode Forward Current----45.6A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 11.4 A ---- 1.5V t rr Reverse Recovery Time V GS = 0 V, I S = 15.6 A,dI F / dt = 100 A/µs (Note 4)--260--ns Q rrReverse Recovery Charge-- 2.47--µCDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status DefinitionAdvance InformationPreliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In DesignFirst ProductionFull ProductionNot In ProductionISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGICOPTOPLANAR™PACMAN™FACT Quiet Series™FASTFASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™Rev. I8ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS TM EnSigna TMFACT™POP™ Power247™PowerSaver™PowerTrench QFET QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER SMART START™SPM™Stealth™SuperFET™ SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic TINYOPTO™TruTranslation™UHC™UltraFET VCX™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™。
QuEChERS dSPE 15ml, 800mgPSA 1200mgMgSO4 说明书
QuEChERS dSPE 15ml, 800mgPSA 1200mgMgSO4, Part Number 5982-6666化学品安全技术说明书GHS product identifier 应急咨询电话（带值班时间）::供应商/ 制造商:安捷伦科技贸易（上海）有限公司中国（上海）外高桥自由贸易试验区英伦路412号（邮编:200131)电话号码： 800-820-3278传真号码: 0086 (21) 5048 2818QuEChERS dSPE 15ml, 800mgPSA 1200mgMgSO4, Part Number 5982-6666化学品的推荐用途和限制用途5982-6666部件号:物质用途:供分析化学实验室使用的试剂和标准50 x 15 ml（毫升） 管安全技术说明书根据 GB/ T 16483-2008 和 GB/ T 17519-2013GHS化学品标识:QuEChERS dSPE 15 mL，800mgPSA 1200mgMgSO4，部件号 5982-6666有关环境保护措施，请参阅第 12 节。
物质或混合物的分类根据 GB13690-2009 和 GB30000-2013紧急情况概述固体。
[粉末。
]白色。
无气味的。
如果散开，可能形成易爆炸的粉尘-气体混合物。
操作和/或处理此物质可能产生能够导致眼睛，皮肤，鼻腔和喉部机械刺激的粉尘。
物理状态:颜色:气味:GHS危险性类别警示词:无信号词。
危险性说明:没有明显的已知作用或严重危险。
防范说明预防措施:不适用。
事故响应:不适用。
安全储存:不适用。
废弃处置:不适用。
标签要素无法分类。
物理和化学危险健康危害没有明显的已知作用或严重危险。
::与物理,化学和毒理特性有关的症状眼睛接触:不利症状可能包括如下情况：刺激充血发红皮肤接触食入呼吸道疼痛咳嗽没有具体数据。
没有具体数据。
::延迟和即时影响，以及短期和长期接触引起的慢性影响短期暴露潜在的即时效应:无资料。
SiI3726CBHU资料
Silicon Image, Inc.
Silicon Image, Inc.
June, 2006
Silicon Image, Inc. reserves the right to make changes to the product(s) or specifications to improve performance, reliability, or manufacturability. Information furnished is believed to be accurate and reliable, but Silicon Image, Inc. shall not be responsible for any errors that may appear in this document. Silicon Image, Inc. makes no commitment to update or keep current the information contained in this document. However, no responsibility is assumed for its use; or any infringement of patents or other rights of third parties, which may result from its use. No liability is assumed as a result of their use or application. No rights under any patent accompany the sale of any such product(s) or information. Silicon Image, Inc. products are not designed or intended for use in Life Support Systems. A Life Support System is a product or system intended to support or sustain life, which if it fails, can be reasonably expected to result in significant personal injury or death. If Buyer or any of its direct or indirect customers applies any product purchased or licensed from Silicon Image, Inc. to any such unauthorized use, Buyer shall indemnify and hold Silicon Image, Inc., its affiliates and their respective suppliers, harmless against all claims, costs, damages and expenses arising directly or indirectly, out of any such unintended or unauthorized use, even if such claims alleges that Silicon Image, Inc. or any other person or entity was negligent in designing or manufacturing the product. Specifications are subject to change without notice
采购技术条件SA-182M F316材料(英对照)
Packing, Marking and loading for shipment shall be in accordance with the ASME specification A700.
应按照ASME A700的规定进行包装、标记与装运。
13.Other requirements shall be conform to the ASME Specification SA-182MF316.
②％Cr+3.3×％Mo+16×%N≥40
6. Manufacture
制造
HG
PURCHASE SPECIFICATION
采购技术条件
DOC. NO.UD2-08U1-9
REV. 1
PAGE3OF5
The material manufacture shall conform to the requirements of specificationSA-182MF316, Part 4.
材料制造应符合SA-182MF316规范第4.节规定。
7. Mechanical requirements
力学性能要求
7.1 The material shall conform to the mechanical property requirementsprescribed in the following table:
材料来源不要求。
15.Other requirements according to criterion of ASMEⅡ2007Ed.
其它要求按照2007版ASMEⅡ标准。
HG
PURCHASE SPECIFICATION
采购技术条件
Multiple Heart-Cutting Starter Kit, Part Number G4
Multiple Heart-Cutting Starter Kit, Part Number G4242-68000*************(24小时)化学品安全技术说明书GHS product identifier 应急咨询电话（带值班时间）::供应商/ 制造商:安捷伦科技贸易（上海）有限公司中国（上海）外高桥自由贸易试验区英伦路412号（邮编:200131)电话号码： 800-820-3278传真号码: 0086 (21) 5048 2818Multiple Heart-Cutting Starter Kit, Part Number G4242-68000化学品的推荐用途和限制用途G2453-850605190-6895部件号:部件号（化学品试剂盒）:G4242-68000安全技术说明书根据 GB/ T 16483-2008 和 GB/ T 17519-2013GHS化学品标识:Multiple Heart-Cutting Starter Kit, Part Number G4242-68000推荐用途Formic Acid 5 mL2D-LC Solution 1 x 2 mL:物质或混合物的分类根据 GB13690-2009 和 GB30000-2013紧急情况概述液体。
[透明。
]液体。
无色。
无资料。
刺激性。
无资料。
如误吸入： 立即呼叫解毒中心/医生。
如误吞咽： 立即呼叫解毒中心/医生。
如皮肤（或头发）沾染： 立即呼叫解毒中心/医生。
如进入眼睛： 立即呼叫解毒中心/医生。
2D-LC Solution如接触到或有疑虑： 求医要么就诊。
如误吸入： 如感觉不适，呼叫解毒中心或医生。
如误吞咽： 如感觉不适，呼叫解毒中心或医生。
如发生皮肤刺激或皮疹： 求医要么就诊。
如仍觉眼刺激： 求医要么就诊。
H226 - 易燃液体和蒸气。
H302 - 吞咽有害。
H314 - 造成严重皮肤灼伤和眼损伤。
Cu pillar用CuNiSnAg-ECD作业标准
Cu pillar用CuNiSnAg-ECD作业标准1. 目的以及适用范围本作业标准是，根据设计，以形成稳定的Cu pillar为目的，适用于Cu pillar用CuNiSnAg-ECD工序。
2. 设备以及材料2.1. 使用设备2.1.1. Cu电镀设备（手动或是自动）2.1.2.Ni/SnAg电镀设备2.2. 使用材料2.2.1. Cu电镀液(1) ミクロファブCu200基本液(2) ミクロファブCu200”B”根据「Cu电镀液ミクロファブCu200购买规格书」购买，生产日期6个月以内的产品｡2.2.2. Ni电镀液：镍电镀液-ＦＷ2.2.3. SnAg电镀液：SULA液体TS-184BASE2.2.4. 10％硫酸Ag补给液2.2.5. SULA液体TS-Ag3. 作业手顺(1) Cu-电镀处理(2) Cu电镀后检查(3) 灰化处理(4) SnAg或是Ni/ SnAg电镀处理(5) SnAg或是Ni/SnAg电镀后检查(6) 光刻胶剥离处理(7) Ag组成检查(8) 高度检查4. 作业条件4.1. Cu-ECD处理4.1.1. Cu电镀（手动）设备使用设备，使用液・处理条件如表-1所示。
4.1.2. Cu电镀（自动）设备使用设备，使用液・处理条件如表-2所示。
4.2. Cu电镀后检查4.2.1. 检查方法金属显微镜50倍下目视检查圆片表面。
另外，50倍下检查，判定不明确时，提高倍率，确认判定。
4.2.2. 检查基准(1) 无电镀不上(2) 无电镀异常析出4.3. 灰化处理(1)灰化腐蚀量：25.0±13.0 nm(2)灰化是，O2/CF4混合gas处理＋O2 gas进行连续处理｡4.4.SnAg or Ni/SnAg-ECD 工序4.4.1. SnAg处理条件使用设备，使用液・处理条件，如表-4所示。
4.4.2. SnAg処理条件使用设备，使用液・处理条件，如表-5所示。
4.1.2. 处理液管理(1)Ni电镀液(a)电镀液名镍电镀液―ＦＷ（制造商：world metal株式会社）(b)电镀液ｐＨ管理以及调整ｐＨ超出管理值时，根据调整方法，调整至管理pH值内。
化学试剂溴化亚铜
（４）碱及碱土金属——取５９ｍｌ“溶液Ｉ”（兄第（１）条注）， 加２．５ｍｌ硫酸、于水浴上蒸千，再于砂浴上加热至硫酸气冒出为止， ］Ｊ１１２００ｍｌ水溶解残渣，加５ ｍ１硫酸（比重１．１１）使溶液呈酸性，然后 加热至７０—８０。０，通入硫化氢至沉淀完全，２—３小时后，过滤，取 １００ｍｌ滤液先在水浴上蒸千，然后移鼍电炉上灼烧，至硫酸气全部排 除为止，用２—３ｍｌ水洗滁三次，每次均蒸干、加２０ｍｌ热水，提取 可溶物，将溶液过滤置已称重之蒸发皿中，先予水浴上蒸发，然后移 入高温炉中（８９０。ａ）灼烧至恒重，残渣重不得大于。
２． 杂耍测定：样品须称准至０．０１９。 （１）盐酸不溶物——称２５９样品，加热溶于１００ｍｌ盐酸及５）ｍｌ
水的混合液中，加１０ｍｌ硝酸，加热煮沸３—５分钟后，加５）ｍｌ水， 于水浴上加热１小时，过滤，用水洗滁滤渣，滤渣于１０５—１ １０。ａ烘干 至恒重，滤渣重不得大于
二极………………………………………………２．Ｓｍｇ 三；ｌ殴………………………………………………１２．５１ｒｉｇ 注。将滤液及洗液移入２５０ｍ］置瓶中，加水稀释至剩度——。溶液１”作测ＡＪ甩
ＨＧＢ ３２５１—６０ 二氧化钛……………………………………………………１２１ ＨＧＢ ３２５２－ｆｊ‘） 四氯化钛……………………………………………………１２６
ＨＧＢ ３２５３－６ｆ１ 碳酸锰………………………………………………………１２９
ＨＧＢ ３２５一｛一６｛Ｊ 氯化锰……………………………………………………··ｌ黜
８
ATS1632 资料
PROTECTION SECTION
Over Voltage Protection VFB(OVP)
POWER BJT SECTION
Collector-Base Voltage
VCBO
IC=1mA,IE=0
Collector-Emitter Voltage
VCEO
IC=10mA,IB=0
Collector Current
Line Compensation
CS
Peak Current Control &LEB
RQ S
PFM Driver
Tds
Cable
Compensation
COMP
Figure3. Functional Block Diagram of ATS1632
OC
`
GND
Absolute Maximum Ratings (Note 1)
深圳市天芯源电子有限公司 ＡＴＳ１６３２
Functional Block Diagram
VDD
VFB
Knee Voltage Sample
PFM
2mA I
Tds Detector
Tds
OVP
Regulator &
bias
UVLO
VFB + Σ +
+ EA -
Constant Voltage &
Constant Current
LED Driver Standby and Auxiliary Power Supplies
ＴＥＬ：０７５５－８９３４２８９５ ＦＡＸ：０７５５－８９３４２８９６ Ｗｅｂ：ｗｗｗ．ｓｚｔｘｐｏｗｅｒ．ｃｏｍ 1