7413中文资料

100
VDS VGS RG
RD D.U.T.
10V
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
tr td(off) tf Ciss
Rise Time Turn-Off Delay Time Fall Time Input Capacitance
––– 8.0 ––– ns ID = 7.2A
––– 35 –––
RG = 6.2Ω
––– 14 –––
VGS = 10V
––– 1670 –––
Benefits
l Low Gate to Drain Charge to Reduce
S
1
Switching Losses
l Fully Characterized Capacitance Including S 2
AA
8
D
7
D
Effective COSS to Simplify Design, (See
Max. 12 9.6 96 2.5 0.02 ± 20 1.0
-55 to + 150
300 (1.6mm from case )
Units
A
W W/°C
V V/ns
°C
Thermal Resistance
Symbol RθJL RθJA
Parameter Junction-to-Drain Lead Junction-to-Ambient
VGS(th) IDSS
Gate Threshold Voltage Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. 30 ––– ––– ––– 1.0 ––– ––– ––– –––
VGS
TOP 10V
4.5V
3.7V
3.5V
3.3V
3.0V
10
2.7V
BOTTOM 2.5V
2.5V
1
0.1 0.1
20µs PULSE WIDTH Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1
0.1
0.01 0.1
2.5V 20µs PULSE WIDTH Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID, Drain-to-Source Current (A)
100
S
3
6
D
App. Note AN1001) l Fully Characterized Avalanche Voltage
G
4
5
D
and Current
Top View
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0 ID = 12A
1.5
1.0
0.5
VGS = 10V 0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
100
TJ = 150°C
10
1
TJ = 25°C
0 2.0
VDS = 15V 20µs PULSE WIDTH
3.0
4.0
5.0
6.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics


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IRF7413
ID , Drain Current (A)
12
10
8
6
4
2
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs. Ambient Temperature
MOSFET symbol
D
––– ––– 3.1
A showing the
integral reverse
G
––– ––– 96
p-n junction diode.
S
––– ––– 1.0 V TJ = 25°C, IS = 7.2A, VGS = 0V
––– 50 75 ns TJ = 25°C, IF = 7.2A
––– 2290 ––– ––– 680 ––– ––– 1020 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 24V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 24V
Avalanche Characteristics
ID, Drain-to-Source Current (A)
100.0 TJ = 150°C
10.0
1000 100
OPERATION IN THIS AREA LIMITED BY R DS(on)
1.0
0.1 0.4
TJ = 25°C
VGS = 0V
0.6
0.8
1.0
1.2
VSD, Source-toDrain Voltage (V)
10
8
VDS= 24V VDS= 15V VDS= 6.0V
6
4
2
0
0
10
20
30
40
50
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
ISD, Reverse Drain Current (A)
––– 74 110 nC di/dt = 100A/µs

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ID, Drain-to-Source Current (A)
IRF7413
100
VGS
TOP 10V
4.5V
3.7V
3.5V
10
3.3V
3.0V
2.7V
BOTTOM 2.5V
Fig 7. Typical Source-Drain Diode Forward Voltage
4
100µsec 10
Tc = 25°C Tj = 150°C
Single Pulse 1
0
1
1msec
10msec
10
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
Notes through are on page 8
Typ. ––– –––
Max. 20 50
Units °C/W
1
3/19/02
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IRF7413
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
Typ. ––– 0.03 ––– ––– ––– ––– ––– ––– –––
Max. ––– ––– 11 18 ––– 1.0 25 100 -100
Units V
V/°C mΩ
V µA
nA
Conditions
VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 7.2A VGS = 4.5V, ID = 6.0A VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V
Qgs
Gate-to-Source Charge
––– 44 66
ID = 7.2A
––– 7.9 ––– nC VDS = 24V
Qgd td(on)
Gate-to-Drain ("Miller") Charge Turn-On Delay Time
––– 9.2 ––– ––– 8.8 –––
VGS = 10V, VDD = 100V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
16 ––– ––– S VDS = 10V, ID = 7.2A
Qg
Total Gate Charge
Fig 4. Normalized On-Resistance Vs. Temperature 3
ID, Drain-to-Source Current (A)
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IRF7413
C, Capacitance (pF)
100000 10000 1000 100
VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss = Cgd Coss = Cds + Cgd
VGS dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
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SMPS MOSFET
Applications l High frequency DC-DC converters
VDSS 30V
PD- 91330F
IRF7413
HEXFET® Power MOSFET RDS(on) max(mW) ID
11@VGS = 10V 12A
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
Typ. ––– –––
Max. 120 7.2
Units mJ A
Diode Characteristics
Parameter
IS
Continuous Source Current
Ci s s Coss
Crss
10 1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
VGS, Gate-to-Source Voltage (V)
12 ID= 7.2A
(Body Diode)
ISM
Pulsed Souபைடு நூலகம்ce Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min. Typ. Max. Units
Conditions
VGS = 0V
Coss Crss
Output Capacitance Reverse Transfer Capacitance
––– 670 –––
VDS = 25V
––– 100 ––– pF ƒ = 1.0MHz
Coss Coss Coss eff.
Output Capacitance Output Capacitance Effective Output Capacitance