晶闸管译文

Thyristor
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed).
Introduction
The thyristor is a four-layered, three terminal semiconducting device, with each layer consisting of alternately N-type or P-type material, for example P-N-P-N. The main terminals, labelled anode and cathode, are across the full four layers, and the control terminal, called the gate, is attached to p-type material near to the cathode.
Function of the gate terminal
The thyristor has three p-n junctions (serially named J1, J2, J3 from the anode).
.When the anode is at
a positive potential V with
respect to the cathode with no voltage applied at the gate, junctions J1 and J3 are forward biased, while junction J2 is reverse biased. As J2 is reverse biased, no conduction takes place (Off state). Now if V AK is increased beyond the breakdown voltage VBO of the thyristor, avalanche breakdown of J2 takes place and the thyristor starts conducting (On state).
晶闸管
晶闸管指的是具有四层交错P、N 层材料的固态半导体器件。

它们用作双稳态开关，当门接收到触发电流时工作，并在正向偏置下持续运作（也就是，整个器件的电压不可逆转）。

介绍
晶闸管是四层次，三端半导体器件，每一层交替由N型或P型材料组成，比如P-N-P-N。

主要终端，标记的阳极和阴极，跨越个四个层次，而控制终端，称作门，连接到阴极附近的p 型材料。

门的作用
晶闸管有3个P-N节（从阳极连续命名为J1, J2, J3）。

如果加正向电压（阳极高于阴极），则J1和J3正向偏置，J2反向偏置。

如果J2反向偏置，器件处于阻断状态（关闭状态）。

若晶闸管两端电压高于击穿电压VBO，则J2被击穿，晶闸管导通（工作状态）。

If a positive potential VG is applied at the gate terminal with respect to the cathode, the breakdown of the junction J2 occurs at a lower value of V AK. By selecting an appropriate value of V G, the thyristor can be switched into the on state suddenly.
Once avalanche breakdown has occurred, the thyristor continues to conduct, irrespective of the gate voltage, until: (a) the potential V AK is removed or (b) the current through the device (anode−cathode) is less than the holding current specified by the manufacturer. Hence V G can be a voltage pulse, such as the voltage output from a UJT relaxation oscillator.
These gate pulses are characterized in terms of gate trigger voltage (VGT) and gate trigger current (IGT). Gate trigger current varies inversely with gate pulse width in such a way that it is evident that there is a minimum gate charge required to trigger the thyristor.
Switching
characteristics
In a conventional thyristor, once it has been switched on by the gate terminal, the device remains latched in the on-state (i.e. does not need a continuous supply of gate current to conduct), providing the anode current has exceeded the latching current (I L). As long as the anode remains positively biased, it cannot be switched off until the anode current falls below the holding current (I H).
如果正电压作用于门与阴极，结J2在一个较低的电压值时就会发生故障。

只要选择一个合适的电压V就可以使晶闸管突然转换到工作状态。

一旦发生雪崩击穿，晶闸管持续工作，不受门极电压控制，直至：（一）电压VAK被移除（二）通过器件的电流（阳极阴极）小于制造商指定的保持电流。

因此，VG可以看做电压脉冲，就如同从单结型晶体管张弛振荡器输出的电压。

这些门脉冲和门极触发电压（VGT）和门极触发电流（IGT）在某些方面有相似的特点。

显而易见的，门极触发电流和门脉冲宽度以这样一种方式成反比在，表明存在一个最低的取决与需要触发的晶闸管的门极电荷。

开关特性
一旦常规晶闸管因门脉冲导通，则器件将保持在工作状态（既不需要供应连续的电流来保持这种状态），提供的阳极电流已超过闭锁电流（IL）。

只要阳极仍然正向偏置，器件就不能被关，直到阳极电流下降到低于保持电流(IH)。

thyristor can be switched off if the external circuit causes the anode to become negatively biased. In some applications this is done by switching a second thyristor to discharge a capacitor into the cathode of the first thyristor. This method is called forced commutation.
After a thyristor has been switched off by forced commutation, a finite time delay must have elapsed before the anode can again be positively biased and retain the thyristor in the off-state. This minimum delay is called the circuit commutated turn off time (tQ). Attempting to positively bias the anode within this time causes the thyristor to be self-triggered by the remaining charge carriers (holes and electrons) that have not yet recombined.
若外部电路使阳极反向偏置，晶闸管可以关断。

在某些应用，这可以通过第二晶闸管放电到的第一个晶闸管的阴极来完成。

这种方法被称为强制换向。

当晶闸管经强制换向被关断后，经过有限的时间延迟，阳极可以再次正向偏置并且晶闸管保持关断状态。

时间延迟的最小值称为电路换向关断时间（TQ）。

如果想要在这段时间内使阳极正向偏置则散乱的残余电荷载体（空穴和电子）将导致晶闸管自我触发。