Correlation between infrared dielectric properties of vanadium doped antiferroelectric BiNbO4

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半导体一些术语的中英文对照

半导体一些术语的中英文对照离子注入机ion implanterLSS理论Lindhand Scharff and Schiott theory 又称“林汉德-斯卡夫—斯高特理论"。

沟道效应channeling effect射程分布range distribution深度分布depth distribution投影射程projected range阻止距离stopping distance阻止本领stopping power标准阻止截面standard stopping cross section 退火annealing激活能activation energy等温退火isothermal annealing激光退火laser annealing应力感生缺陷stress—induced defect择优取向preferred orientation制版工艺mask—making technology图形畸变pattern distortion初缩first minification精缩final minification母版master mask铬版chromium plate干版dry plate乳胶版emulsion plate透明版see—through plate高分辨率版high resolution plate，HRP超微粒干版plate for ultra-microminiaturization 掩模mask掩模对准mask alignment对准精度alignment precision光刻胶photoresist又称“光致抗蚀剂"。

负性光刻胶negative photoresist正性光刻胶positive photoresist无机光刻胶inorganic resist多层光刻胶multilevel resist电子束光刻胶electron beam resistX射线光刻胶X-ray resist刷洗scrubbing甩胶spinning涂胶photoresist coating后烘postbaking光刻photolithographyX射线光刻X—ray lithography电子束光刻electron beam lithography离子束光刻ion beam lithography深紫外光刻deep—UV lithography光刻机mask aligner投影光刻机projection mask aligner曝光exposure接触式曝光法contact exposure method接近式曝光法proximity exposure method光学投影曝光法optical projection exposure method 电子束曝光系统electron beam exposure system分步重复系统step—and—repeat system显影development线宽linewidth去胶stripping of photoresist氧化去胶removing of photoresist by oxidation等离子[体］去胶removing of photoresist by plasma 刻蚀etching干法刻蚀dry etching反应离子刻蚀reactive ion etching，RIE各向同性刻蚀isotropic etching各向异性刻蚀anisotropic etching反应溅射刻蚀reactive sputter etching离子铣ion beam milling又称“离子磨削”。

物理专业英语词汇

物理专业英语词汇摘要：物理学是一门研究自然界最基本的规律和现象的科学，它涉及到许多专业的英语词汇。

本文根据物理学的不同分支，整理了一些常用的物理专业英语词汇，并用表格的形式展示了它们的中英文对照。

本文旨在帮助物理专业的学习者和爱好者掌握一些基本的物理术语，以便于阅读和交流。

1. 基础物理词汇基础物理词汇是指一些在物理学中普遍使用的概念和量，它们是物理学的基本语言。

以下是一些基础物理词汇的中英文对照表：中文英文物理physics物质matter能量energy力force重力gravity摩擦力friction拉力traction质量mass惯性inertia加速度acceleration力矩torque静止at rest相对relative动能kinetic energy势能potential energy功work动量momentum角动量angular momentum能量守恒energy conservation保守力conserved force振动vibration振幅amplitude波wave驻波standing wave震荡oscillation相干波coherent wave干涉interference衍射diffraction轨道orbit速度velocity速率speed大小magnitude方向direction水平horizontal竖直vertical相互垂直perpendicular坐标coordinate直角坐标系Cartesian coordinate system极坐标系polar coordinate system2. 电学和磁学词汇电学和磁学是研究电荷、电流、电场、磁场等现象和规律的物理学分支，它们与光学、热学、原子物理等有着密切的联系。

以下是一些电学和磁学词汇的中英文对照表：中文英文电子electron电荷charge电流current电场electric field电通量electric flux电势electric potential导体conductor电介质dielectric绝缘体insulator电阻resistor电阻率resistivity电容capacitor3. 物理专业英语词汇物理专业英语词汇是指在物理学的学习和研究中经常使用的一些专业术语，它们涵盖了物理学的各个分支和领域，如力学、电磁学、光学、热学、量子力学等。

(1-x)PST-xPZT铁电陶瓷的介电与热释电性能研究

(1-x)PST-xPZT铁电陶瓷的介电与热释电性能研究1蓝德均、江一杭、陈异、陈强、肖定全、朱建国*(四川大学材料科学与工程学院四川成都 610064)E-mail: nic0400@摘要：以普通氧化物混合烧结法制备了高钙钛矿相的(1-x)PST-xPZT铁电弛豫陶瓷。

发现烧结温度和PZT掺入量对样品中的焦绿石相的存在影响很大。

样品的钙钛矿相成分随烧结温度升高而增加。

介电性能测试表明(1-x)PST-xPZT铁电弛豫陶瓷具有弥散型介电响应特征，(1-x)PST-xPZT铁电弛豫陶瓷的居里点T c和压电常数d33随PZT的掺入量的增加而增加。

室温下x=0.1的(1-x)PST-xPZT陶瓷样品的热释电系数可达到约15×10-8C/(cm2.K)。

关键词：PST－PZT陶瓷；弛豫铁电陶瓷；钙钛矿相；一步烧结制备1．引言钽钪酸铅Pb(Sc1/2Ta1/2)O3（PST）是一种热释电性能优良的典型B位复合铅基钙钛矿弛豫铁电陶瓷[1～3]。

由于纯PST的居里点较低（-5℃－25℃），需要在约1500℃的高温下烧结才能获得致密、具有钙钛矿结构且性能良好的材料[4]，从而限制了PST陶瓷材料的应用领域。

为了避免会引起陶瓷性能恶化的焦绿石相的形成，通常制备B位复合铅基钙钛矿驰豫铁电陶瓷的方法是先驱体法，即先将B位化合物或一种B位组份与一种A位组份[5]先行在高温下进行焙烧，制备出一种中间材料后再将组成陶瓷的其它组份化合物与前驱体混合后烧结得到所需的陶瓷。

但是有也研究表明[6,7]，用传统电子陶瓷制备工艺（以下简称一步法，One-Step-Sintering Method，OSSM），也可以制备出B位复合纯钙钛矿相陶瓷材料。

由于一般二元系的准同型相界（Morphotropic Phase Boundary,MPB）是一个范围很窄的区间，通过MPB成分的调整而达到调整材料综合性能的自由度很小；但对于三元或更多元系来说，其准同型相界一般是曲线甚至是曲面，故而在MPB附近进行组分调控可望进一步优化材料的综合性能[8]。

天线英语

decay of correlation 数学名词

decay of correlation 数学名词Decay of correlation（相关性的衰减）refers to the decrease in correlation between two variables as the distance between them increases. It is a mathematical concept used to quantify the relationship between two variables across different spatial or temporal distances.1. The decay of correlation between rainfall and crop yield was observed as the distance between the two fields increased.雨量与农作物产量之间的相关性随着两个田地之间的距离增加而减弱。

2. The study analyzed the decay of correlation between interest rates and stock market performance over a one-year timespan.该研究分析了利率和股市表现之间的相关性在一年的时间内是如何衰减的。

3. As the distance between two cities increased, thedecay of correlation between their population sizes became more noticeable.随着两个城市之间的距离增加，它们的人口规模之间的相关性衰减变得更加明显。

4. The researchers used statistical methods to determine the decay of correlation between air pollution andrespiratory diseases in different neighborhoods.研究人员使用统计方法来确定不同社区之间空气污染和呼吸道疾病之间的相关性衰减。

外文翻译(英文)用氧化物粉末制NTC热敏电阻的微观结构与导电性能的关系(外文)

Correlation between Microstructure andConductance in NTC Thermistors Produced from Oxide PowdersG.D.C.Csete de Gyo rgyfalva,*A.N.Nolte and I.M.ReaneyDepartment of Engineering Materials,Sir Robert Had®eld Building,University of She eld,She eld,S13JD,UKAbstractA detailed study of spinel-structured Ni 1Àx Mn 2+x O 4formed by a mixed oxide route has shown that when x %0a high proportion of NiO is residual in the sin-tered ceramic.Wickham (Wickham,D.G.,Solid phase equilibria in the system NiO±Mn 2O 3±O 2.J.Inorg.Chem.,1964,26,1369±1377)demonstrated that the spinel phase decomposes in air above 900 C.Sintering in this system is usually per-formed around 1200 C.Decomposition of the spi-nel phase is therefore inevitable.The e ect of decomposition on the microstructure and electrical properties of Ni 1Àx Mn 2+x O 4based ceramics is discussed.#1999Elsevier Science Limited.All rights reservedKeywords :microstructure,electrical conductivity,spinels,thermistors.1IntroductionNegative temperature coe cient (NTC)thermistors are found in an ever increasing number of electrical and electronic products.Ni 1Àx Mn 2+x O 4,where x denotes the deviation from the stoichiometric 1:1NiO:Mn 2O 3ratio,o ers a range of properties that are suitable for most temperature sensing applications.When x =0,(nickel manganite,NiMn 2O 4),the solid solution has an inverse cubic spinel structure,based on a 2Â2Â2array of face centred cubic (fcc)oxygen subunits.When x =1,Mn 3O 4is present which is a tetragonally distorted spinel.The properties routinely used to characterise NTC thermistors are resistance,R 1and R 2,at 25 C (T 1)and 85 (T 2)and a B value (with units of tem-perature in Kelvin)which is a measure of the sensi-tivity of the device over a given temperature range:BT 1T 2T 2ÀT 1ln R 1R 2IThe exact mode of conduction in nickel manga-nite is poorly understood,but several modelsinvoke the small polaron theory.1,2Small polaron conduction is sometimes referred to as a `hopping'mechanism,as it involves the transfer of polarisa-tion from one cation to another.In the nickel manganite system,it has been postulated that the mixed valence,Mn 4+,Mn 3+cations present on the octahedral sites give rise to these small polaron pathways.1The octahedral cations in the spinel structure lie in chains along some <110>direc-tions.These vectors represent the smallest inter-cationic distances within the unit cell.Another important parameter when considering applications for Ni 1Àx Mn 2+x O 4ceramics is their thermal stability or aging characteristics (changes in conductance over long periods,i.e.lifetime of the component).Reports indicate that better ther-mal stability is found in tetragonal ceramics rather than cubic materials though the conductivity of the latter is 10to 100times higher.2,3This could be explained by a reduction in the concentration of Mn 4+compared to Mn 2+and Mn 3+or possibly by the presence of planar defects such as ferroelas-tic domain walls.4Ni 1Àx Mn 2+x O 4ceramics have been prepared by the carbonate and oxalate methods,in addi-tion to the more conventional mixed oxide route.5Irrespective of the preparation route,sintering (typically around 1200 C)is always carried out above the decomposition temperature in air for the system ($900 C)as discussed by Wickham.5Con-sequently,ceramics ®red using conventional pro-cessing will contain multiple phases,e.g.NiO fromJournal of the European Ceramic Society 19(1999)857±860#1999Elsevier Science LimitedPrinted in Great Britain.All rights reservedP I I :S 0955-2219(98)00331-80955-2219/99/$-see front matter857*To whom correspondence should be addressed.Fax:+44-(0)114-222-5943;e-mail:mtp96gdc@she the decomposed spinel and Mn-rich regions,3,6,7in accordance with the equation:xiwn III2y43x xiy 3Àx3xi II 3À3x a 3Àxwn II 2x a 3Àx wn III2O4 x6O2PIt is the intention of this paper to demonstrate how the degree of decomposition from single phase in¯uences conductivity and,in particular,aging. X-ray di raction and transmission electron micro-scopy will be used to monitor the degree of decomposition and accelerated aging tests(470 C) will be performed.2Experimental ProcedureThe NiO and Mn2O3powders in a1:1Mn2O3:NiO molar ratio were weighed out using an electronic balance( 0.01g)and transferred to a poly-propylene vessel with a charge of ZrO2milling media(the weight of ZrO2varied with the weight of the batch being processed).The batch was mil-led for6h to reduce particle size distribution to a mean of6"m and a maximum of12"m then drawn through a suction®lter.The resulting slurry was dried in a70 C oven overnight.The dried powder was calcined in a mullite crucible at900 C for16h and subjected to a further6h milling under the above conditions.One one cm diameter pellets were pressed from the powders and sintered at 1250 C,achieving densities better than95%. Microstructural and structural characterisation were carried out using transmission electron microscopy(TEM)and X-ray di raction(XRD), respectively.XRD was performed on solid cera-mics and loose powders using a Phillips PW1050 di ractometer with a Cu K source.A0.02 step size was used at a scan rate of0.5 minÀ1.TEM samples were prepared by grinding the ceramic to a thickness of20"m and ion beam milling to per-foration.Images were obtained using JEOL200CX and3010TEMs:the latter was equipped with a LINK energy dispersive X-ray detector. Accelerated aging tests were carried out using a non-induction wound furnace held at470 C.Tem-perature¯ux was monitored in the furnace using a thermocouple mounted immediately adjacent to the test piece.Platinum wires leading to a high precision HP4284A LCR meter were used to make contact to the electroded surface of the cera-mic.Changes in the resistance of the leads and contacts as a function of temperature were taken into account by performing a closed circuit run.Typically,temperature varied within a 0.2 C range over10h.3Results and DiscussionWickham,5in his study of the Ni1Àx Mn2+x O4solid solution,demonstrated that above900 C decom-position occurs resulting in the formation of NiO and a Mn-rich spinel phase.The higher the tem-perature above the onset of the decomposition reaction,the more rapid the rate.In order to study the decomposition reaction in more detail and its potential e ect on electrical properties,single phase ceramics(within the sensitivity of conventional XRD)were fabricated,as demonstrated in Fig.1. Figure2shows a series of XRD traces from single phase samples heat treated at1000,1100and 1200 C for1h.The evolution of peaks corres-ponding to NiO can be observed in accordance with the predictions of Wickham.6The relative intensities of the NiO peaks(marked)increase with increasing temperature.Figure3is a bright®eld(BF)TEM image showing a typical region of spinel grains in single phase material.The grain boundaries and interiors are free from second phase.Inset in Fig.3is a <110>zone axis di raction pattern(ZADP)from one of the spinel grains in the image.Figure4isaFig.1.XRD trace of single phase ceramic.Note absence ofNiOpeaks.Fig.2.XRD spectra of samples held at1000,1100,1200 c for1h.NiO peaks are marked.858G.D.C.Csete de GyoÈrgyfalva et al.BFTEM image obtained from a sample decom-posed for9h at1250 C.Inset is a<110>ZADP pattern from the imaged region.The fundamental re¯ections can be indexed according to a<110> zone axis from rock salt structured NiO.The weak re¯ections at half integer positions arise from regions of spinel phase,observed as dark contrast. Rock salt(NiO)and spinel structured compounds invariably exhibit a cube//cube orientation rela-tionship.Oxides with the rock salt structure are based around single fcc oxygen subunits whereas spinel structured compounds have a2Â2Â2fcc oxygen sublattice.In order to study the aging characteristics of the ceramics as a function of decomposition,con-ductance measurements were performed over10h at470 C 0.2 C.Figure5shows the change in conductance normalised to the initial value,against time at470 C for(A)single phase spinel and(B) `partially'decomposed spinel(heat treated for9h at1250 C).The single phase sample showed a negligible drift in resistivity over the test period, whereas the`partially'decomposed sample exhib-ited a steady decline in conductance.Di erences in the absolute starting values can be attributed to small variations in the dimensions of the samples. Figures6and7are XRD traces showing the samples before and after the accelerated aging experiments.Figure6,which corresponds to Fig.5(A)(decomposed),shows a reduction intheFig.4.BFTEM image of spinel regions in a NiO matrix.Insetis a<110>ZADP from the NiO.Faint re¯ections are presentat half integer positions arising from the dark regions ofspinel.Fig.5.Graph showing normalised conductance versus time at470 C for(A)single phase and(B)decomposed(9h at1250 C)material.Fig.6.XRD spectra of single phase sample(A)before and(B)after acceleratedaging.Fig.7.XRD spectra of decomposed sample(A)before and(B)after acceleratedaging.Fig.3.BFTEM image of spinel grains in single phase mate-rial.Inset is a<110>zone axis di raction pattern(ZADP)from a spinel grain.NTC thermistors produced from oxide powders859intensity of the NiO peaks(A)before and(B)after the experiment.However,Fig.7,which corre-sponds to Fig.5(B)(single phase),shows traces that are identical(A)before and(B)after.It is thought that the accelerated aging at470 C leads to NiO being re-absorbed into the ceramic during the lifetime of the experiment.It is proposed that the decomposition reaction occurs homogeneously throughout the ceramic,and the NiO is intimately mixed with the spinel phase,as evidenced by Fig.4. The reverse process may therefore occur relatively quickly because of the short di usion distances involved(of the order of nm according to Fig.4). However,it should be noted that aging at room temperature may be related to di erent phenomena than suggested by these accelerated tests.4Conclusions.The reaction between NiO and Mn2O3pro-ceeds forwards slowly at temperatures less than900 C,but will reverse as temperature increases above this value..The rate of decomposition increases with increasing temperature resulting in amicrostructure of intimately mixed NiO and Mn-rich spinel..Initial investigations indicate that a single phase ceramic gives rise to substantial improvements in thermal stability under accelerated aging.References1.Brabers,V.A.M.and Terhell,J.,Electrical conductivityand cation valencies in nickel manganite.Phys.Stat.Sol.(a),1982,69,325±332.2.Dorris,S.E.and Mason,T.O.,Electrical properties andcation valences in Mn3O4.J.Am.Ceram.Soc.,1988, 71(5),379±385.3.Rousset,A.,Larange,A.,Brieu,M.,Couderc,J.andLegros,R.,In¯uence de la microstructure sur la stabilite electrique des thermistance.C.T.N Journ.de Phys.III, 1992,4,833±845.4.Macklen,E.D.,Electric conductivity and cation distribu-tion in nickel manganite.J.Phys.Chem.Solids,1986, 47(11),1073±1079.5.Wickham,D.G.,Solid phase equilibria in the systemNiO±Mn2O3±O2.J.Inorg.Chem.,1964,26,1369±1377.6.Feltz,A.,Topfer,J.and Schirrmeister,F.,Conductivitydata and preparation routes for NiMn2O4thermistor ceramics.J.Eur.Ceram.Soc.,1992,9,187±191.7.Jung,J.,Topfer,J.,Murbe,J.and Feltz,A.,Micro-structure and phase development in NiMn2O4spinel ceramics during isothermal sintering.J.Europ.Ceram.Soc.,1990,6,351±359.860G.D.C.Csete de GyoÈrgyfalva et al.。

电子信息类专业词汇

whatsoever=whatever0switchboard(电话)交换台bipolar（电子）双极的premise（复）房屋，前提cursor(计算机尺的)游标，指导的elapse（时间）经过，消失vaporize（使）蒸发subsystem（系统的）分部，子系统，辅助系统metallic（像）金属的，含金属的，（声音）刺耳的dispatch（迅速）派遣，急件consensus（意见）一致，同意deadline（最后）期限，截止时间tomographic X线体层摄像的alas唉，哎呀cluster把…集成一束，一组，一簇，一串，一群encyclopedia百科全书millionfold百万倍的semiconductor半导体radius半径范围，半径，径向射线half-duplex transmission半双工传输accompaniment伴随物，附属物reservation保留，预定quotation报价单，行情报告，引语memorandum备忘录redundancy备用be viewed as被看作…be regards as被认为是as such本身；照此；以这种资格textual本文的，正文的verge边界variation变化，变量conversion 变化，转化identity标识；标志criterion标准，准则in parallel on并联到，合并到juxtapose并置，并列dialing pulse拨号脉冲wave-guide波导wavelength division multiplexed波分复用baud rate波特率playback播放（录音带，唱片）no greater than不大于update不断改进，使…适合新的要求，更新asymmetric不对称的irrespective不考虑的，不顾的inevitably不可避免的inevitable不可避免的，不可逃避的，必定的segment部分abrasion擦伤，磨损deploy采用，利用，推广应用take the form of采用…的形式parameter参数，参量layer层dope掺杂FET(field effect transistors)场效应管audio recording唱片ultra-high-frequency(UHF)超高频in excess of超过in excess of超过hypertext超文本ingredient成分，因素ingredient成分，组成部分，要素metropolitan-area network(WAN)城域网metropolitan area network(WAN)城域网，城市网络congestion充满，拥挤，阻塞collision冲突extractive抽出；释放出extract抽取，取出，分离lease出租，租约，租界期限，租界物pass on传递，切换transmission传输facsimile传真innovative=innovatory创新的，富有革新精神的track磁道impetus促进，激励cluster簇stored-program control(SPC)存储程序控制a large number of 大量的peal大声响，发出supersede代替supplant代替，取代out-of-band signaling带外信号simplex transmission单工传输monochromatic单色的，单色光的，黑白的ballistic弹道的，射击的，冲击的conductor导体hierarchy等级制度，层次infrastructure底层结构，基础结构geographic地理的，地区的geographically地理上GIS(ground instrumentation system)地面测量系统ground station地面站earth orbit地球轨道extraterrestrial 地球外的，地球大气圈外的Land-sat地球资源卫星rug地毯，毯子ignite点火，点燃，使兴奋electromagnetic电磁的inductive电感arc电弧telephony电话（学），通话dielectric电介质，绝缘材料；电解质的，绝缘的capacitor电容telecommunication电信，无线电通讯scenario电影剧本，方案modem pool调制解调器（存储）池superimposing叠加，重叠pin钉住，扣住，抓住customize定做，定制monolithic独立的，完全统一的aluminize镀铝strategic对全局有重要意义的，战略的substantial多的，大的，实际上的multi-path fading多径衰落multi-path多路，多途径；多路的，多途径的multi-access多路存取，多路进入multiplex多路复用multiplex多路复用的degradation恶化，降级dioxide二氧化碳LED(light-emitting-diode)发光二极管evolution发展，展开，渐进feedback反馈，回授dimension范围，方向，维，元scenario方案scenario方案，电影剧本amplifer放大器noninvasive非侵略的，非侵害的tariff费率，关税率；对…征税distributed functional plane(DFP)分布功能平面DQDB(distributed queue dual bus)分布式队列双总线hierarchy分层，层次partition分成segmentation分割interface分界面，接口asunder分开地，分离地detached分离的，分开的，孤立的dispense分配allocate分配，配给；配给物centigrade分为百度的，百分度的，摄氏温度的fractal分形molecule分子，微小，些微cellular蜂窝状的cellular蜂窝状的，格形的，多孔的auxiliary storage(also called secondary storage)辅助存储器decay腐烂，衰减，衰退negative负电vicinity附近，邻近vicinity附近地区，近处sophisticated复杂的，高级的，现代化的high-frequency(HF)高频high definition television高清晰度电视chromium铬annotate给…作注解in terms of根据，按照disclosure公布，企业决算公开public network公用网functionality功能，功能度mercury汞resonator共鸣器resonance共振whimsical古怪的，反复无常的administration管理，经营cursor光标（显示器），游标，指针optical computer光计算机photoconductor光敏电阻optical disks光盘optically光学地，光地wide-area 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line金属线路，有线线路coherent紧凑的，表达清楚的，粘附的，相干的compact紧密的approximation近似undertake进行，从事transistor晶体管elaborate精心制作的，细心完成的，周密安排的vigilant警戒的，警惕的alcohol酒精，酒local area networks(LANs)局域网local-area networks(LANs)局域网drama剧本，戏剧，戏剧的演出focus on聚集在，集中于，注视insulator绝缘root mean square均方根uniform均匀的open-system-interconnection(OSI)开放系统互连expire开始无效，满期，终止immunity抗扰，免除，免疫性take…into account考虑，重视…programmable industrial automation可编程工业自动化demountable可拆卸的tunable可调的reliable可靠be likely to 可能，大约，像要videotex video可视图文电视negligible可以忽略的aerial空气的，空中的，无形的，虚幻的；天线broadband宽（频）带pervasive扩大的，渗透的tensile拉力的，张力的romanticism浪漫精神，浪漫主义discrete离散，不连续ion离子force力量；力stereophonic立体声的continuum连续统一体，连续统，闭联集smart灵巧的；精明的；洒脱的token令牌on the other hand另一方面hexagonal六边形的，六角形的hexagon六角形，六边形monopoly垄断，专利video-clip录像剪辑aluminum铝pebble卵石，水晶透镜forum论坛，讨论会logical relationships逻辑关系code book码本pulse code modulation(PCM)脉冲编码调制roam漫步，漫游bps(bits per second)每秒钟传输的比特ZIP codes美国邮区划分的五位编码susceptible(to)敏感的，易受…的analog模拟，模拟量pattern recognition模式识别bibliographic目录的，文献的neodymium钕the european telecommunication standardization institute(ETSI)欧洲电信标准局coordinate配合的，协调的；使配合，调整ratify批准，认可bias偏差；偏置deviate偏离，与…不同spectrum频谱come into play其作用entrepreneurial企业的heuristic methods启发式方法play a …role(part)起…作用stem from起源于；由…发生organic器官的，有机的，组织的hypothesis前提front-end前置，前级potential潜势的，潜力的intensity强度coincidence巧合，吻合，一致scalpel轻便小刀，解剖刀inventory清单，报表spherical球的，球形的distinguish区别，辨别succumb屈服，屈从，死global functional plane(GFP)全局功能平面full-duplex transmission全双工传输hologram全息照相，全息图deficiency缺乏thermonuclear热核的artifact人工制品AI(artificial intelligence)人工智能fusion熔解，熔化diskettes(also called floppy disk)软盘sector扇区entropy熵uplink上行链路arsenic砷neural network神经网络very-high-frequency(VHF)甚高频upgrade升级distortion失真，畸变identification识别，鉴定，验明pragmatic实际的implementation实施，实现，执行，敷设entity实体，存在vector quantification矢量量化mislead使…误解，给…错误印象，引错vex使烦恼，使恼火defy 使落空facilitate使容易，促进retina视网膜compatible适合的，兼容的transceiver收发两用机authorize授权，委托，允许data security数据安全性data independence数据独立data management数据管理database数据库database management system(DBMS)数据库管理信息系统database transaction数据库事务data integrity数据完整性，数据一致性attenuation衰减fading衰落，衰减，消失dual双的，二重的transient瞬时的deterministic宿命的，确定的algorithm算法dissipation损耗carbon碳diabetes糖尿病cumbersome讨厌的，麻烦的，笨重的razor剃刀，剃go by the name of通称，普通叫做commucation session通信会话traffic通信业务（量）synchronous transmission同步传输concurrent同时发生的，共存的simultaneous同时发生的，同时做的simultaneous同时发生的，一齐的coaxial同轴的copper铜statistical统计的，统计学的dominate统治，支配invest in投资perspective透视，角度，远景graphics图示，图解pictorial图像的coating涂层，层deduce推理reasoning strategies推理策略inference engine推理机topology拓扑结构heterodyne外差法的peripheral外界的，外部的，周围的gateway网关hazardous危险的microwave微波（的）microprocessor微处理机，微处理器microelectronic微电子nuance微小的差别（色彩等）encompass围绕，包围，造成，设法做到maintenance维护；保持；维修satellite communication卫星通信satellite network卫星网络transceiver无线电收发信机radio-relay transmission无线电中继传输without any doubt无疑passive satellite无源卫星sparse稀少的，稀疏的downlink下行链路precursor先驱，前任visualization显像feasibility现实性，可行性linearity线性度constrain限制，约束，制约considerable相当的，重要的geo-stationary相对地面静止by contrast相反，而，对比起来coorelation相关性mutual相互的mutually相互的，共同的interconnect相互连接，互连one after the other相继，依次minicomputer小型计算机protocol协议，草案protocol协议，规约，规程psycho-acoustic心理（精神）听觉的；传音的channelization信道化，通信信道选择run length encoding行程编码groom修饰，准备virtual ISDN虚拟ISDNmultitude许多，大批，大量whirl旋转preference选择，喜欢avalanche雪崩pursue寻求，从事interrogation询问dumb哑的，不说话的，无声的subcategory亚类，子种类，子范畴orbital眼眶；轨道oxygen氧气，氧元素service switching and control points(SSCPs)业务交换控制点service control points(SCPs)业务控制点service control function(SCF)业务控制功能in concert一致，一齐handover移交，越区切换at a rate of以……的速率in the form of以…的形式base on…以…为基础yttrium钇（稀有金属，符号Y）asynchronous transmission异步传输asynchronous异步的exceptional异常的，特殊的voice-grade音频级indium铟give rise to 引起，使产生cryptic隐义的，秘密的hard disk硬盘hard automation硬自动化by means of用，依靠equip with用…装备subscriber用户telex用户电报PBX(private branch exchange)用户小交换机或专用交换机be called 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专业英语词汇

hyperventilation换气过度
pons桥
6
hypoxia组织缺氧
polypnea呼吸急促
7
apnea（apneic）呼吸暂停（的）
medulla骨髓
8
hemoglobin血红蛋白
spirometer肺活量计
9
pharynx咽
pneumograph呼吸描记器
10
larynx喉
pneumotachometer呼吸速度描记器
coagulation凝固
20
spectroscopically
aqueous水的
21
abdormen腹部
heparin肝素
22
prominence突出，显著
defibrillator除颤器
23
ischemia局部缺血
aneroid无液气压计
24
artifact伪信号
flip-flop触发器
25
anesthetized麻醉的
29
dicrotic重脉的
30
notch切迹
Chapter 6chapter9
1
infrared(IR)红外的
quasistatic似静态的
2
strain gauge应变仪
turbulent紊流的
3
thermocouple热电偶
gauge pressure计示压力
4
proverbial公认的
sphygmomanometer血压计
plague鼠疫，瘟疫
9
fibrosis纤维症
fungi（单fungus）（真，霉）菌
10
tidal volume潮气量

操作性DRIFT光谱表征通过非热等离子体辅助催化从空气中除去VOC中的催化剂表面上的中间物质

O R I G I N A L P A P E ROperando DRIFT Spectroscopy Characterizationof Intermediate Species on Catalysts Surface in VOCRemoval from Air by Non-thermal Plasma AssistedCatalysisAnthony Rodrigues 1•Jean-Michel Tatiboue¨t 1•Elodie Fourre ´1Received:3February 2016/Accepted:11May 2016/Published online:20May 2016ÓSpringer Science+Business Media New York 2016Abstract An innovative plasma discharge reactor was developed to ﬁt an infrared cell and to allow the in situ characterization of isopropanol (IPA)and toluene decomposition at the surface of three metal oxides (c -Al 2O 3,TiO 2and CeO 2).The impact of the plasma dis-charge on the conversion of these pollutants,with the material placed in the discharge area,was studied under real time conditions at atmospheric pressure via infrared analysis.The plasma treatment of IPA molecules led to the formation of acetone,propene,acetic acid and/or formic acid.By contrast,the toluene oxidation led to the rapid opening of the aromatic ring,followed by the total oxidation through carboxylic formation of the species arising from the toluene molecules fragmentation.Keywords In-situ characterization ÁInfrared spectroscopy ÁNon-thermal plasma ÁVOC IntroductionNon thermal atmospheric plasma (NTAP)is now recognized as an innovative technology applied to a wide range of applications (etching,deposition of thin ﬁlm,volatile organic compound oxidation,surface functionalization,biomedical …)[1].The advantageous properties of NTAP,in terms of energetic and environmental aspects,are responsible for the enhanced research in this ﬁeld.Non thermal atmospheric plasmas are produced by a variety of electrical discharges or electron beams leading to plasmas such as corona dis-charges,gliding arc discharges,dielectric barrier discharges (DBD),plasma needle,plasma jets and micro hollow cathode discharges [2].Non thermal plasmas are generated by the&Elodie Fourre ´elodie.fourre@univ-poitiers.fr1Institut de Chimie des Milieux et Mate´riaux de Poitiers (IC2MP),UMR CNRS 7285,Ecole Nationale Supe´rieure d’Inge ´nieurs de Poitiers (ENSIP),Universite ´de Poitiers,1,rue marcel Dore ´,TSA 41105,86073Poitiers Cedex 9,FrancePlasma Chem Plasma Process (2016)36:901–915DOI 10.1007/s11090-016-9718-1application of a high potential difference between two electrodes that leads to a strong electricalﬁeld,resulting in the formation of a highly reactive environment favorable to various reactions.For decades,non-thermal atmospheric plasma was used mainly for the production of ozone and water puriﬁcation[3].More recently,due to a greater concern on environmental issues,research on waste gas treatment,volatile organic compounds (VOCs)removal has been largely studied.In particular,the presence of a catalyst in the plasma discharge resulted in a synergistic effect and improved VOCs conversion[4–6]. However,if research has shown tremendous results on VOCs conversion,a few points remain unclear.It concerns essentially the interactions between the chemical species generated in the plasma discharge and a material surface.The willingness to identify active species in the plasma discharge is very challenging.It is a complexﬁeld of research,as the species concentration,nature and energetic power are dependent of the plasma reactor conﬁguration,chemical and electrical parameters.Already,research has been dedicated to in situ identiﬁcation of plasma species in the gaseous phase by spectroscopic methods[7–15].Most of these studies are dealing with the characterization of the plasma species but not with their reactivity.Rivallan et al.[11]have studied the evolution of air/CO2gas mixture under non-thermal plasma by in situ FTIR at the microsecond time-scale.They showed that the mechanism of CO2consumption is reversible and that CO2molecules are excited through a collision with excited N2molecules,where the transfer of energy occurs by a resonant effect.Other authors tried to elucidate some aspects of the ion chemistry occurring in dielectric barrier and corona discharges with benzene/air[7]or different gases such as gas mixtures including Ar,H2,N2,O2and CH4as plasma precursors[8].OH radical concentration was determined by indirect detection with salicylic acid[13]and direct measurement by laser-inducedﬂuorescence[12].Kim et al.[15]have reviewed recent progresses in understanding the interaction of NTP and catalysts.They insisted on the effects of the electrical characteristics of the catalyst on the plasma discharge gener-ation and therefore chemical reactivity.In a recent publication[14],we have shown that the decomposition of isopropanol(IPA)by non-thermal plasma on c-Al2O3,analyzed by operando Fourier Transform Infrared(FTIR)under low vacuum could proceed via oxi-dation,aldolization and fragmentation mechanisms.Such cascade reactions were only possible when c-Al2O3catalyst was placed in the discharge zone.This VOC has been studied and published in the literature with results essentially based on the analysis of the outlet gas composition.IPA conversion leads to the formation of acetone,acetic acid, formaldehyde(when the reaction is incomplete),formic acid,CO2and H2O[14–19].Al-Abduly and Christensen[20]reported a spectroscopic study of non-thermal plasma in an air-fed dielectric barrier discharge plasma jet.In situ analysis of the plasma glow and downstream gas by FTIR revealed the presence of various species such as O3,N2O5,N2O, HNO3,CO2,CO and a vibrationally excited form of CO2[i.e.CO*2(v)].Here we are dealing with a non-thermal plasma reactor set at atmospheric pressure and coupled to reﬂectance infrared spectroscopy.The test reactions studied in this work con-cerned the removal of isopropanol and toluene from c-Al2O3,TiO2and CeO2surfaces by non-thermal plasma.The impact of the plasma discharge on the conversion of these pollutants,with the material placed in the discharge area,was studied under real time conditions at atmospheric pressure via infrared analysis.Fig.1a Schematic of the IR/plasma cell.b Views of the disassembled cell(a–d)ExperimentalA non-thermal plasma at atmospheric pressure(NTPAP)reactor was developed and optimized for its combination with a DRIFT spectrometer.The spectrometer was modiﬁed in order to carry out a DBD plasma in the DRIFT cell while a direct surface analysis was carried out.The cell was made of Polytetraﬂuoroethylene(PTFE)and included a cylin-drical base(30mm diameter,29mm height)and a conical top(26mm height).The cone was equipped with two ZnSe windows,to allow the passage of the IR beam,and one glass window(Fig.1a)to view the discharge.The volumic dielectric barrier discharge plasma consisted in a tip electrode(Fig.1b,tip diameter0.5mm)held in the centre of the cone and a counter electrode(10mm910mm copper tape)placed under a dielectric(0.5mm thick in PEEK:polyether ether ketone).The sample was placed on the dielectric,under-neath the tip.The gap between the tip and dielectric surface was kept constant(1mm).The electrodes were connected,via a capacitor of known value(C m=0.56nF),to a high voltage power ampliﬁer(Trek,20/20A)coupled to a function generator(TTi TG1010A). Experiments were carried out in an airtight cell with the possibility to vary the chemical and electrical parameters.FTIR Spectrometer Frontier(PerkinElmer,UK),equipped with a Mercury Cadmium Telluride(MCT)detector,was used to record IR spectra in the 4000–900cm-1range with a resolution of8cm-1.Each spectrum is the accumulation of 50analyses allowing an acquisition time below1min.The contributions of gaseous H2O and CO2were subtracted when scanning.Before each experiment the cell was purged with dry air for10min(30mL min-1)before the initiation of the plasma discharge.IR spectra of the sample wafer were then recorded in reﬂection mode(DRIFT:Diffuse Reﬂectance Infrared Fourier Transform)as a function of the duration of DBD plasma.Scans were taken while the plasma treatment was switched on and over a period of time going from1min to 8h.All the experiments were carried out at atmospheric pressure.The DBD experiments were studied under‘‘dynamic’’conditions,aﬂow rate of 30mL min-1of gas(dry air,Air liquide)was constantly running in the cell chamber.The power injected in the reactor was determined by the analysis of the Lissajous ﬁgure(Fig.2)that reports the transferred electrical charge Q m as a function of the appliedFig.2Lissajous curve at U a=16kV and f=500Hzvoltage(U a)using the so-called‘‘Manley method’’[21].Q m was calculated from the measured voltage(U m)across the capacitor(C m)connected in series to the ground elec-trode.The energy injected,E(per cycle)was calculated from the integration of the area formed by the Lissajousﬁgure.The energy allowed the calculation of the power(in W) injected in the reactor as well as the speciﬁc energy E spe(in J L-1)following Eqs.1and2, where f is the frequency(in Hz)and D the gasﬂow rate in(L s-1):P¼EÂfð1ÞE spe¼PDð2ÞThe experiments were carried out at16kV(500Hz),where the plasma discharge was stable,homogeneous and sufﬁciently energetic to promote excited species.These param-eters correspond to a power of24mW and an energy density of48J L-1.The catalyst sample was in the form of a thin layer of powder(50–100mg)slightly pressed on the dielectric plate in order to avoid its spraying under the effect of gasﬂow rate and plasma.The three oxides were commercial oxides(Table1).The speciﬁc surface area of the samples was determined by the BET(Brunauer–Emmett–Teller)method from the nitrogen adsorption isotherms at-196°C in an automated Micromeritics Tristar3000 apparatus after drying for8h at400°C.ResultsElectrical parameters of the plasma generated in the IR cell were determined with and without the presence of a catalytic material.The inﬂuence of the material on the plasma discharge was evaluated by comparing the variation of the plasma power as a function of applied voltage(Fig.3).A slight decrease of the power is noticed when Al2O3is placed in the discharge,likely due to the slight modiﬁcation of the dielectric properties of the dielectric plate when covered by alumina.Isopropanol RemovalAll the surfaces wereﬁrst placed in contact with a gas mixture air/IPA(100ppm)at atmospheric pressure for15min.This was followed by a10minﬂow of air prior to the plasma treatment,also under airﬂow.Figure4a displays the evolution of the IR spectra of Al2O3as a function of treatment time,from1to60min.The same experiment was carried out on the two other oxide surfaces of CeO2and TiO2(Figs.5a,6a).Additionally,spectra of three likely products(acetic acid,formic acid and acetone)were recorded and are displayed in Figs.4b,5b and6b.The spectra were recorded after10min adsorption of a mixture of air/product(100ppm)at atmospheric pressure followed by a10min purge under airﬂow.The IR spectra were obtained after subtraction of the background spectrum Table1Catalystscharacteristics Oxide Supplier Surface area(m2g-1)c-Al2O3Degussa102TiO2P25Sigma Aldrich9CeO2Prolabo23of the sample under air before adsorption.For the three samples,after IPA adsorption and before plasma treatment,the predominant bands corresponding to the C–H asymmetric and symmetric stretching (m -as and m -s)were detected between 3030and 2840cm -1and between 1510and 1300cm -1for the methyl C–H asymmetric and symmetric bends (d -as and d -s).Between 1255and 1205cm -1,d –O–H from un-dissociated IPA was identiﬁed.Other components,with lower intensity,around 1150and 1075cm -1were related to the C–O stretch and C–C skeletal of isopropoxide species,formed via dissociative adsorption of the IPA molecule or/and to molecularly adsorbed IPA [16,22–25].The negative bands in the 3750–3600cm -1region,corresponding to the surface hydroxyl groups of metallic oxides show that IPA adsorption can occur either as isopropoxy group (Scheme 1a)or by coordination with surface OH groups (Scheme 1b).The remaining negative band even after oxidation of IPA by non-thermal plasma strongly suggests that the IPA is mostly adsorbed as an isopropoxy species (Scheme 1b)rather than by coordination with surface OH groups [26–28].As soon as the discharge was initiated,the bands corresponding to the methyl group stretching (2975–2840cm -1region)decreased as a function of the plasma treatment time,whatever the sample.After 60min of plasma treatment,a residual C–H contribution is still visible which results from the for-mation of decomposition compounds such as acetone,aldehydes and/or acids.A very broad band going from 3340to 2250cm -1emerged after 5min of treatment for TiO 2and CeO 2and 20min for c -Al 2O 3which corresponds to the O–H stretch of carboxylic acid.This band is prominent on c -Al 2O 3and similarly,but less evident,on TiO 2and CeO 2.In the lower wavenumber region,the analysis is more difﬁcult due to the overlapping of the bands.However,the progressive formation (from 1to 60min treatment)of a band corresponding to a C=O group (ketone,aldehyde and/or carboxylic acid)and centered at 1730,1760and 1712cm -1for c -Al 2O 3,TiO 2and CeO 2,respectively,is clearly identiﬁed.Regarding c -Al 2O 3and TiO 2,a shoulder within the ketone region band is visible at alower Fig.3Injected power in the DBD reactor as a function of the input voltage at atmospheric pressure,under a constant dry air ﬂow of 30mL min 21wavenumber (1695and 1730cm -1)and correlates closely to the C=O band of acetic and/or formic acids.CeO 2presents a much wider band,centered at 1712cm -1,encompassing the C=O contribution of the acids.Bands of methyl bending vibrations (d )evolved differently.On c -Al 2O 3surface,an increase and a broadening of the d -as C–H band (1465cm -1),a decrease/shift of d -s C–H band (IPA:1382cm -1)to 1360cm -1were observed as a function of the treatment time.The band at 1360cm -1,emerging after 5min,is related to the methyl bending vibrations of acetone [29–31].The bands at 1595and 1465cm -1could be assigned to the C=C stretching and C–H bending mode of methyl or methylene group of propene,respectively[32],according to the products formation observed by IPA oxidation at low temperature on pure c -Al 2O 3[33].Simultaneously,a small shoulder at 1225cm -1also appearedafterFig.4DRIFT Spectra on c -Al 2O 3.a In situ IR spectra of the evolution of adsorbed isopropanol as a function of plasma treatment time from bottom to top (adsorbed IPA then 1,5,10,20,30,45and 60min of plasma treatment).b Spectra of adsorbed IPA after 60min of plasma treatment and adsorbed acetone,acetic acid and formic acid (from bottom to top )20min treatment and the large band at 1730cm -1was assigned to acetone formation.The small residual contribution remaining at 1150cm -1could correspond to C–O bonds stretching and assign to formic acid formation.These observations show that isopropoxide species formed by the dissociative adsorption of isopropanol give rise to acetone and formic acid on c -Al 2O 3when treated by non-thermal plasma under air.On TiO 2,an increase and a broadening of the d -as C–H band (1470cm -1)and the total disappearance of d -s C–H band (1385cm -1),were observed as a function of the plasma treatment time.The IPA bands at lower wavenumbers:d -O–H (1253cm -1),C–O stretching and C–C skeletal elongation (1150and 1075cm -1),progressively weakened till complete disappearance as the plasma treatment time increased showing that IPA on TiO2Fig.5DRIFT Spectra on TiO 2.a In situ IR spectra of the evolution of adsorbed isopropanol as a function of plasma treatment time from bottom to top (adsorbed IPA then 1,5,10,20,30,45and 60min of plasma treatment).b Spectra of adsorbed IPA after 60min of plasma treatment and adsorbed acetone,acetic acid and formic acid (from bottom to top )Fig.6DRIFT Spectra on CeO2.a In situ IR spectra of the evolution of adsorbed isopropanol as a function of plasma treatment time from bottom to top(adsorbed IPA then1,5,10,20,30,45and60min of plasma treatment).b Spectra of adsorbed IPA after60min of plasma treatment and adsorbed acetone,acetic acidand formic acid(from bottom to top)is rapidly oxidized into acetone followed by further decomposition into CO2and gas phase water.A small acidic residue is visible from the broad band in the3000cm-1region. Additionally,at1470cm-1and in smaller extend at1590cm-1bands were identiﬁed and corresponded to the C–H bending and the COO-stretching,respectively.On CeO2,the bands corresponding to the d-as(1470cm-1)and d-s(1390cm-1) bending mode of methyl are evolving and broadening as a function of the plasma treatment time.In the same time,a large band is growing at1275cm-1which corresponds to the O–H bending vibration mode of carboxylic acids.As for the two other samples,it is difﬁcult to differentiate the different acids and their contribution due to the overlapping of the bands in this region.Cerium oxide that shows particularly broad bands makes it difﬁcult to observe the evolution of acetone formation/oxidation on this surface.Finally,an interesting feature,only visible on CeO2is the adsorption/desorption of CO2in the2300–2400cm-1 region(2365and2333cm-1),that may arise from the decomposition of IPA into CO2. However,we have to be careful with this interpretation since published work on CO2 adsorption on c-Al2O3[34]or tin oxide[35]revealed the presence of bands in the 1900–1200cm-1range relative to adsorbed CO2,which may,in this case,be hidden by other contributions at low wavenumbers.According to these observations,the steps following IPA stabilization on the surface can follow these two pathways:either its oxidation into acetone,either a C–C bond breakage of a methyl group.Oxidation reactions taken place here can either come from a radical attack, probably from OÁorÁOH,on the–OH group of IPA,either via redox reactions of the adsorbed isopropoxide species on the metal oxide surface acid sites.C–C bond breakage can be achieved byÁOH radical attack and the resulting methyl radical can react with oxygenated species to form formaldehyde,then formic acid.The other radical fragment, CH3CHÁOH,can then be oxidized in acetaldehyde,then in acetic acid.On alumina,the formation of propene from IPA dehydration can also occurs,followed by its decomposition into CO2and H2O.Toluene RemovalThe experiments regarding toluene elimination were performed in the same conditions as for IPA removal.Toluene was previously adsorbed on the catalysts(100ppm in air for 10min,30mL min-1)followed by purging with dry air before the start of the plasma treatment.The recorded spectra as a function of time are presented in Fig.7a–c.As expected,on the three oxides the main reference IR bands of adsorbed toluene are visible at around3100–3000cm-1domain corresponding to the C–H aromatic(3030and 3080cm-1)and at2930and2880cm-1corresponding to the C–H stretching of the methyl group and at1495,1460and1610cm-1,corresponding to the C–C stretching in the aromatic ring.The negative bands at1705(bending mode of hydrogen bonded surface hydroxyls)and3695cm-1(stretching mode)could be assigned to the loss of surface hydroxyl group upon toluene adsorption[36–40].On CeO2and to a lesser extent on c-Al2O3,a small contribution of in plane C–H bending at1081and1035cm-1was identiﬁed as well as weak bands at1160and1180cm-1for CeO2and c-Al2O3,respectively.Finally, a weak overtone in the2000–1800cm-1region is detected.As soon as the plasma was generated,and this independently of the catalyst sample tested,the C–H aromatic bands(3030and3080cm-1)decreased rapidly after only1min of plasma treatment and this until10min.At10min,no C–H aromatic contribution is visible,and this for the three surfaces,indicating the complete transformation of toluene.Fig.7In situ DRIFT spectra ofthe evolution of toluene on a c-Al2O3,b CeO2and c TiO2as a function of plasma treatment time from bottom to top(adsorbed toluene then1,5,10,20,30,45 and60min of plasma treatment)In the same time,a strong band in the1730–1755cm-1region evolved after5min of plasma treatment characteristic of the presence of a C=O bond.As the plasma treatment time increased,the band increased,shifted to higher wavenumber after10min of plasma to reach1775,1770and1790cm-1on c-Al2O3,CeO2and TiO2,respectively(Table2and Fig.7).The non-symmetry of the bands and apparition of a shoulder(1700–1725cm-1)at 10min for CeO2and TiO2and20min for c-Al2O3indicate the presence of a carboxylic acid in addition to aldehyde or ester[25,41].The bands at1330,1250and1290cm-1on c-Al2O3,TiO2and CeO2,respectively,can be attributed to C–O stretching.In addition,the broad shoulder of O–H stretching(2500–3500cm-1)conﬁrms the presence of carboxylic acid.Independently of the catalyst,the growing of the1790–1770cm-1band is associated with the formation of a negative signal in the OH vibration domain(3500–3700cm-1) showing that the species formed under plasma adsorb on OH surface groups.By increasing the plasma treatment duration,the main change is the shift of the C=O band for more than 10min of plasma.This shift could be assigned to the formation of bridged carbonates[42] on the catalysts surface showing the total oxidation of toluene under plasma treatment.A band at1345cm-1appeared after1min and could also correspond to primary O–H bending(d-OH)or=C–OH phenol stretching.The band increased and shifted to 1330cm-1until20min and remained constant until60min.At this wavenumber,the functional group identiﬁed is more likely C–O from carboxylic acid or=C–OH phenol stretching but also N–O symmetrical stretching from oleﬁnic compounds.However,other nitrogen related contribution were not identiﬁed.On CeO2,less intense bands appear at1414and1250–1216cm-1which could be due to the formation of carboxylic acids(O–H bending and C–O stretching,respectively)and at 1610cm-1which could be assigned to the formation of adsorbed formate species[43].The relative intensity of this band decreases from c-Al2O3,TiO2to CeO2,following the increasing oxidative property(or basicity)of these oxides.On the three surfaces,the band of C=C stretching at*1460and at*1610cm-1 broadened and increased until60min while the one at*1495cm-1decreased until complete disappearance.The increasing and broadening of the1460cm-1band could be due to various stretching behavior such as C=C of phenol or C=C from alkenes indicating a rupture of the aromatic ring.A weak shoulder in the2950–2930cm-1region,indicates the Table2Shift of the C=O band as a function of plasma treatment time and corresponding chemical groups[25,34]Plasma time(min)0151020304560Wavenumber maxima(cm-1)Al2O3–1740174017451769177517751775Corresponding carbonyl group Aldehyde/esterAld/esterAld/ester Ald/ester/acidCarb.CeO2–1736173617601783177017701770Corresponding carbonyl group Aldehyde/esterAld/esterAld/ester/acidCarb.TiO2–1750175017751782179017901790Corresponding carbonyl group –Aldehyde/esterAld/esterAld/ester/acidCarb.Ald aldehyde,carb carbonatepresence of C–H stretching from methyl group only,without aromatic contribution.The presence of bands in the2300–2400cm-1domain is associated to the presence of adsorbed CO2.Fig.8Possible mechanism pathways and intermediates of toluene oxidation and degradationAccording to the results of various authors[44–52]and ours,we can propose some probable reaction mechanisms for toluene elimination.First of all,Kohno et al.[44] showed that,from the three pathways undertaken by NTAP species for VOC elimination, the electron impact would be the favored one as it presents the lowest reaction rate constant in the order of10-6cm3s-1.The two other pathways,ion collisions and radical attack(OÁ/ OHÁ)would occur subsequently and contribute to toluene oxidation and ring opening reactions.The electronic impact would lead to the formation of benzene radical that would rapidly be oxidized in phenol.For the later,the aromatic cycle would be rapidly hydroxylated into hydroquinone,further oxidized in benzoquinone.Finally the ring would be opened by oxygen or OH radicals leading to the formation of aldehydes and carboxylic acids with different carbon chains length.Possible mechanisms are displayed in Fig.8.As long as oxidative radicals are present,in addition to electronic impact,the reaction would continue until complete fragmentation into CO2and H2O following various mechanisms that are currently not completely identiﬁed and still need further investigation.Addition-ally,methyl radical would be oxidized in formic acid followed by complete elimination in CO2/H2O.It seems that the oxidation of the methyl group on toluene,leading to ben-zaldehyde and benzoic acid,is not the favored pathway undertaken for toluene oxidation by non-thermal plasma.In fact,from our results,it seems that the band related to C=O apparition coincides with the complete disappearance of aromatic C–H bands,indicating a rapid opening of the aromatic ring prior to the oxidation of the fragments into carboxylic acid.ConclusionsThis new infrared cell allows characterizing by DRIFT the adsorbed organic species on a catalyst surface under DBD non-thermal plasma and in controlled gaseous environment at atmospheric pressure,realizing then a true operando analysis of a catalyst surface sub-mitted to the action of a non-thermal plasma.The method has proven to be so efﬁcient that it was possible to follow the evolution of secondary compounds,arising from the oxidation of isopropanol and toluene.The plasma treatment of IPA molecules adsorbed on c-Al2O3, TiO2and CeO2surfaces led to the formation of acetone,propene,acetic acid and/or formic acid.On CeO2and TiO2surface,only acids remained after60min of plasma treatment while c-Al2O3showed a small presence of acetone and propene on its surface.By contrast, the toluene oxidation by non-thermal plasma led to the rapid opening of the aromatic ring, followed by the total oxidation through carboxylic formation of the species arising from the toluene molecules fragmentation.These results should be considered as preliminary experiments probing the extended possibilities of this new IR cell to characterize in operando conditions a catalyst or any surface submitted to a non-thermal plasma and are able 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物理专业常用英语词汇

物理：absolute acceleration 绝对加速度absolute error 绝对误差absolute motion 绝对运动absolute temperature 绝对温度absolute velocity 绝对速度absolute zero 绝对零度absorption 吸收absorptivity 吸收率accelerated motion 加速运动acceleration of gravity 重力加速度acceleration 加速度accidental error 偶然误差acoustics 声学acting force 作用力adjustment 调节aether 以太air pump 抽气机air table 气垫桌air track 气垫导轨alternating current circuit 交流电路alternating current generator 交流发电机alternating current 交流电altimeter 测高仪ammeter 安培计amperemeter 电流计ampere 安培Ampere's experiment 安培实验Ampere's force 安培力Ampere's law 安培定律amperemeter 安培计amplitude 振幅angle of rotation 自转角，转动角angular acceleration 角加速度angular displacement 角位移angular velocity 角速度anion 负离子anisotropy 各向异性annihilation 湮没anode 阳极antenna 天线applied physics 应用物理学Archimedes principle 阿基米德原理area 面积argumentation 论证argument 辐角astigmatoscope 散光镜atomic nucleus 原子核atomic physics 原子物理学atomic spectrum 原子光谱atomic structure 原子结构atom 原子Atwood ' s machine 阿特伍德机average power 平均功率average velocity 平均速度Avogadro constant 阿伏加德罗常数Avogadro law 阿伏加德罗定律balance 天平ballistic galvanometer 冲击电流计band spectrum 带状谱barometer 气压计basic quantity 基本量basic units 基本单位battery charger 电池充电器battery,accumulator 蓄电池battery 电池组beam 光束betatron 电子感应加速器Bohr atom model 玻尔原子模型boiling point 沸点boiling 沸腾bounce 反弹bound charge 束缚电荷bound electron 束缚电子branch circuit 支路breakdown 击穿brightness 亮度buoyancy force 浮力calorifics 热学camera 照相机capacitance 电容capacitor 电容器capillarity 毛细现象cathode ray 阴极射线cathode-ray tube 阴极射线管cathode 阴极cation 正离子cell 电池Celsius scale 摄氏温标centre of gravity 重心centre of mass 质心centrifugal force 离心力centripetal acceleration 向心加速度centripetal force 向心力chain reaction 链式反应chaos 混沌characteristic spectrum 特征光谱charged body 带电体charged particle 带电粒子charge 充电circular hole diffraction 圆孔衍射circular motion 圆周运动classical mechanics 经典力学classical physics 经典物理学cloud chamber 云室coefficient of maximum staticfriction 最大静摩摩系数coefficient of restitution 恢复系数coefficient of sliding friction 滑动摩擦系数coefficient 系数coherent light 相干光源coil 线圈collision 碰撞component force 分力component velocity 分速度composition of forces 力的合成composition of velocities 速度的合成compression 压缩concave lens 凹透镜concave mirror 凹面镜concurrent force 共点力condensation 凝结condenser 电容器conducting medium 导电介质conductor 导体conservative force field 保守力场conservative force 保守力constant force 恒力constant 常量continuous spectrum 连续谱convergent lens 会聚透镜convex lens 凸透镜convex mirror 凸面镜coordinate system 坐标系coplanar force 共面力Corolis force 科里奥利力corpuscular property 粒子性corpuscular theory 微粒说Coulomb force 库仑力coulomb 库仑Coulomb's law 库仑定律counter 计数器creation 产生creepage 漏电crest 波峰critical angle 临界角critical resistance 临界电阻critical temperature 临界温度crystal 晶体current density 电流密度current element 电流元current source 电流源current strength 电流强度curvilinear motion 曲线运动cyclotron 回旋加速器damped vibration 阻尼振动damping 阻尼Daniell cell 丹聂耳电池data processing 数据处理data 数据decay 衰变definition of ampere 安培的定义defocusing 散集density 密度derived quantity 导出量derived unit 导出单位dielectric 电介质diffraction pattern 衍射图样diffraction 衍射diffuse reflection 漫反射digital timer 数字计时器dimensional exponent 量纲指数dimension 量纲diode 二级管diopter 屈光度direct current, DC 直流direct impact 正碰direct measurement 直接测量discharge 放电disorder 无序dispersion 色散displacement 位移divergent lens 发散透镜Doppler effect 多普勒效应double slit diffraction 双缝衍射driving force 驱动力dry cell 干电池echo 回声eddy current 涡流effective value 有效值elastic body 弹性体elastic force 弹［性］力elasticity 弹性electric charge 电荷electric circuit 电路electric corona 电晕electric energy 电能electric field 电场electric field intensity 电场强度electric field line 电场线electric flux 电通量electric leakage 漏电electric neutrality 电中性electric potential 电位，电势electric potential difference 电位差，电势差electric potential energy 电位能electric power 电功率electric quantity 电量electrification 起电electrification by friction 摩擦起电electrified body 带电体electrode 电极electrolysis 电解electrolyte 电解质electromagnetic damping 电磁阻尼electromagnetic induction 电磁感应electromagnetic radiation 电磁辐射electromagnetic wave 电磁波electromagnetic wave spectrum 电磁波谱electromagnetism induction phenomenon 电磁感应现象electromagnet 电磁体electrometer 静电计electromotive force 电动势electron 电子electron beam 电子束electron cloud 电子云electron microscope 电子显微镜electron volt 电子伏特electroscope 验电器electrostatic equilibrium 静电平衡electrostatic induction 静电感应electrostatic screening 静电屏蔽elementary charge 基本电荷，元电荷energy 能量energy level 能级equilibrium 平衡equilibrium condition 平衡条件equilibrium of forces 力的平衡equilibrium position 平衡位置equilibrium state 平衡态equivalent source theorem 等效电源定理erect image 正像error 误差ether 以太evaporation 蒸发excitation 激发excitation state 激发态experiment 实验experimental physics 实验物理学external force 外力eyepiece 目镜far sight 远视Faraday cylinder 法拉第圆筒Faraday law ofelectromagnetic induction 法拉第电磁感应定律Faraday's law ofelectromagnetic induct 法拉第电磁感应定律farad 法拉(电容的单位)film interference 薄膜干涉final velocity 末速度first cosmic velocity 第一宇宙速度fission 裂变fixed-axis rotation 定轴转动flotation balance 浮力秤fluid 流体focal length 焦距focusing 调焦，聚焦focus 焦点force 力forced vibration 受迫振动fractal 分形free charge 自由电荷free electron 自由电子free period 自由周期freezing point 凝固点frequency 频率friction force 摩擦力fusion 聚变galvanometer 电流计gas 气体general physics 普通物理学generator 发电机good conductor 良导体gravitation 引力gravity 重力gravitational potential energy重力势能gravity field 重力场ground earth 接地ground state 基态ground wire 地线hadron 强子half life period 半衰期heat 热heat transfer 传热henry 亨利hertz 赫兹(频率的单位)Hooke law 胡克定律humidity 湿度hydrogen 氢原子hypothesis 假设ice point 冰点ideal gas 理想气体image 像image distance 像距image height 像高imaging 成像imperfect inelastic collision 非完全弹性碰撞impulse 冲量incident angle 入射角incident ray 入射线indirect measurement 间接测量induced electric current 感应电流induced electric field 感应电场induction current 感应电流induction electromotive force感应电动势induction motor 感应电动机inertia 惯性inertial force 惯性力inertial system 惯性系infrared ray 红外线infrasonic wave 次声波initial phase 初位相initial velocity 初速度input 输入instantaneous power 瞬时功率instantaneous velocity 瞬时速度instrument 仪器insulated conductor 绝缘导体insulating medium 绝缘介质insulator 绝缘体intensity of sound 声强interference 干涉interference fringe 干涉条纹interference pattern 干涉图样interferometer 干涉仪internal energy 内能internal force 内力internal resistance 内阻intonation 声调inverted image 倒像invisible light 不可见光ion beam 离子束ionization 电离irreversible process 不可逆过程isobaric process 等压过程isobar 等压线isochoric process 等体积过程isothermal 等温线isothermal process 等温过程isotope 同位素isotropy 各向同性joule 焦耳（功的单位）Joule heat 焦耳热Joule law 焦耳定律Joule' law 焦耳定律Kepler law 开普勒定律kinematics 运动学kinetic energy 动能Laplace's equation 拉普拉斯方程laser 激光，激光器law 定律law of conservation of angular momentum 角动量守恒定律law of conservation of energy 能量守恒定律law of conservation of mass 质量守恒定律law of conservation of mechanical energy 机械能守恒定律law of conservation of momentum 动量守恒定律law of electric charge conservation 电荷守恒定律Le Système International d ` Unit è s 国际单位制(SI)lead 导线length 长度lens 透镜lens formula 透镜公式Lenz's law 楞次定律lepton 轻子Light ray 光线light source 光源light wave 光波lightning rod 避雷针light 光line spectrum 线状谱lines of current 电流线lines of force of electric field 电力线liquefaction 液化liquefaction point 液化点liquid 液体longitudinal wave 纵波loop 回路Lorentz force 洛仑兹力luminous intensity 发光强度magnetic field 磁场magnetic field intensity 磁场强度magnetic field line 磁场线magnetic induction flux 磁感应通量magnetic induction 磁感应强度magnetic induction line 磁感应线magnetic material 磁性材料magnetic needle 磁针magnetic pole 磁极magnetics 磁学magnetism 磁学magnetization 磁化magnet 磁体magnification 放大率magnifier 放大镜，放大器manometer 流体压强计mass 质量mass defect 质量亏损mass-energy equation 质能方程matter 物质matter wave 物质波Maxwell's equations 麦克斯韦方程组mean speed 平均速率mean velocity 平均速度measurement 测量mechanical energy 机械能mechanical motion 机械运动mechanical vibration 机械振动mechanics 力学medium 介质melting fusion 熔化melting point 熔点metre rule 米尺microdetector 灵敏电流计micrometer caliper 螺旋测微器microscope 显微镜microscopic particle 微观粒子mirror reflection 镜面反射mirror 镜mixed unit system 混合单位制modern physics 现代物理学molar volume 摩尔体积molecular spectrum 分子光谱molecular structure 分子结构moment of force 力矩momentum of electromagneticfield 电磁场的动量momentum 动量motor 电动机multimeter 多用［电］表musical quality 音色N pole 北极natural frequency 固有频率natural light 自然光negative charge 负电荷negative crystal 负晶体negative ion 负离子negative plate 负极板network 网络neutralization 中和neutron 中子newton 牛顿（力的单位）Newton first law 牛顿第一定律Newton second law 牛顿第二定律Newton third law 牛顿第三定律nonequilibrium state 非平衡态north pole 北极nucleus force 核力nucleus of condensation 凝结核object 物object distance 物距object height 物高objective 物镜observation 观察Oersted's experiment 奥斯特实验ohm 欧姆Ohm law 欧姆定律ohmmeter 欧姆计Ohm's law 欧姆定律open circuit 开路optical bench 光具座optical centre of lens 透镜光心optical fiber 光导纤维optical glass 光学玻璃optical instrument 光学仪器optical lever 光杠杆optical path difference 光程差optical path 光程(路)optically denser medium 光密介质optically thinner medium 光疏介质optics 光学orbit 轨道order 有序oscillograph 示波器output 输出overweight 超重parallel connection ofcondensers 电容器的并联parallelogram rule 平行四边形定律parallel-resonance circuit 并联谐振电路parameter 参量particle 质点，粒子Pascal law 帕斯卡定律path 路程peak 峰值pendulum 摆penumbra 半影perfect conductor 理想导体perfect elastic collision 完全弹性碰撞perfect inelastic collision 完全非弹性碰撞periodicity 周期性period 周期periscope 潜望镜permanent magnet 永磁体permittivity of vacuum 真空介电常数permittivity 电容率phase 位相phenomenon 现象photocurrent 光电流photoelectric cell 光电管photoelectric effect 光电效应photoelectron 光电子photography 照相术photon 光子physical balance 物理天平physical quantity 物理量physics 物理学piezometer 压强计pitch 音调Planck constant 普朗克常量plasma 等离子体point charge 点电荷polarization 偏振polarized light 偏振光polycrystal 多晶体poor conductor 不良导体positive charge 正电荷positive crystal 正晶体positive ion 正离子positive plate 正极板positron 正电子potential energy 势能potentiometer 电位差计power 功率pressure 压强，压力primary coil 原线圈principle of constancy of light velocity 光速不变原理prism 棱镜projectile 抛体projectile motion 抛体运动projector 投影仪proton 质子pulley 滑轮pulley block 滑轮组quantity of heat 热量quantization 量子化quantum 量子quantum mechanics 量子力学quantum number 量子数radar 雷达radioactive source 放射源radius of gyration 回旋半径random motion 无规则运动range 量程rated voltage 额定电压reacting force 反作用力real image 实像real object 实物reasoning 推理recoil 反冲rectilinear motion 直线运动reference frame 参考系，坐标系reference system 参考系reflected angle 反射角reflected ray 反射线reflection coefficient 反射系数reflection law 反射定律reflectivity 反射率refracted angle 折射角refracted ray 折射线refraction law 折射定律refraction coefficient 折射系数refractive index 折射率relative acceleration 相对加速度relative error 相对误差relative motion 相对运动relative velocity 相对速度relativity 相对论resistance 电阻resistance box 电阻箱resistivity 电阻率resistor 电阻［器］resolution of force 力的分解resolution of velocity 速度的分解resonance 共振，共鸣resonant frequency 共振频率resultant force 合力resultant velocity 合速度reversibility of optical path 光路可逆性reversible process 可逆过程rheostat 变阻器right-hand screw rule 右手螺旋定则rocker 火箭rotating magnetic field 旋转磁场rotation 自转，转动Rutherford scattering 卢瑟福散射Rutherford ［α-particlescattering］experiment 卢瑟福［α散射］实验S pole 南极saturation 饱和scalar 标量scalar field 标量场scanner 扫描器second cosmic velocity 第二宇宙速度selective absorption 选择吸收self-induced electromotiveforce 自感电动势self-inductance 自感self-induction phenomenon 自感系数semiconductor 半导体semi-transparent film 半透膜sensitive galvanometer 灵敏电流计sensitivity 灵敏度sensitometer 感光计sensor 传感器series connection ofcondensers 电容器的串联series-resonance circuit 串联谐振电路short circuit 短路short sight 近视shunt resistor 分流电阻significant figure 有效数字simple harmonic motion (SHM)简谐运动simple harmonic wave 简谐波simple pendulum 单摆single crystal（monocrystal）单晶体single slit diffraction 单缝衍射sinusoidal alternating current简谐交流电sinusoidal current 正弦式电流sliding friction 滑动摩擦slit 狭缝solar cell 太阳能电池solenoid 螺线管solidification 凝固solidifying point 凝固点solid 固体solution 溶液solvation 溶解sonar 声纳sound source 声源sound velocity 声速sound wave 声波sound 声［音］source 电源south pole 南极space 空间spark discharge 火花放电special relativity 狭义相对论specific heat capacity 比热容spectacles 眼镜spectral analysis 光谱分析spectral line ［光］谱线spectrograph 摄谱仪spectrography 摄谱学spectroscopy 光谱学spectrum 光谱speed 速率spherical mirror 球面镜spontaneous radiation 自发辐射spring balance 弹簧秤stability 稳定性stabilized current supply 稳流电源stabilized voltage supply 稳压电源standard atmosphericpressure 标准大气压standard cell 标准电池standing wave 驻波static friction 静摩擦stationary state 定态steady current 恒定电流steady current source 恒流源steady voltage source 恒压源steam point 汽点stiffness 劲度［系数］stimulated radiation 受激辐射stop watch 停表sublimation 升华superconductivity 超导［电］性superconductor 超导体superposition principle ofelectric field 电场强度叠加原理superposition theorem 叠加定律supersaturation 过度饱和supersonic speed 超声速supersonic wave 超声波supply transformer 电源变压器surface resistance 表面电阻switch 开关system of concurrent forces 共点力系system of particles 质点系system of units 单位制systematic error 系统误差telescope 望远镜temperature 温度tension 张力the law of gravity 万有引力定律theorem 原理theorem of kinetic energy 动能定理theorem of momentum 动量定理theoretical physics 理论物理学theory 理论thermal capacity 热容［量］thermal equilibrium 热平衡thermal motion 热运动thermal transmission 传热thermodynamic scale ［of temperature］热力学温标thermodynamic temperature 热力学温度thermometer 温度计thermometric scale 温标thermonuclear reaction 热核反应thick lens 厚透镜thin lens 薄透镜third cosmic velocity 第三宇宙速度three-phase alternating current 三相［交变］电流time 时间timer 定时器，计时器torsion balance 扭秤total reflection 全反射trajectory 轨道transformer 变压器transistor 晶体管transition 跃迁translation 平移transmission line 传输线transmissivity 透射率transverse wave 横波triboelectrification 摩擦起电triode 三极管trough 波谷tuning fork 音叉turbulent flow 湍流ultrasound wave 超声波ultraviolet ray 紫外线umbra 本影undulatory property 波动性uniform dielectric 均匀电介质uniform motion 匀速运动unit 单位unit system 单位制universal constant 普适常量universal gravitation 万有引力universal meter 多用［电］表vacuum tube 真空管vacuum 真空value of amplitude 幅值vaporization 汽化variable 变量vector 矢量velocity of light 光速velocity 速度verification 验证vernier 游标vernier caliper 游标卡尺vibration 振动viewing angle 视角viewing field 视场virtual image 虚像virtual object 虚物virtual value 有效值visibility 可见度visible light 可见光voltage 电压voltage division circuit 分压电路voltaic cell 伏打电池voltmeter 伏特计voltmeter-ammeter method伏安法volt 伏特volume 体积vortex electric field 涡旋电场watt 瓦特wave equation 波动方程wave theory 波动说wavelength 波长wave-particle dualism 波粒二象性wave 波weight 重量weightlessness 失重white light 白光work 功work function 逸出功X-ray X射线Young experiment 杨氏实验zero line 零线α -decay α衰变α -particle α粒子α -ray α射线β -decay β衰变β -ray β射线γ -decay γ衰变γ -ray γ射线。

负折射率隐身衣英文版

Geometric optics-based multiband cloaking of large objects with the wave phase and amplitude preservation
Ran Duan,1 Elena Semouchkina,2,* and Ravi Pandey1
1Leabharlann Abstract: The geometric optics principles are used to develop a unidirectional transmission cloak for hiding objects with dimensions substantially exceeding the incident radiation wavelengths. Invisibility of both the object and the cloak is achieved without metamaterials, so that significant widths of the cloaking bands are provided. For the preservation of wave phases, the λ-multiple delays of waves passing through the cloak are realized. Suppression of reflection losses is achieved by using half-λ multiple thicknesses of optical elements. Due to periodicity of phase delay and reflection suppression conditions, the cloak demonstrates efficient multiband performance confirmed by full-wave simulations.

微电子专业英语词汇

AAbrupt junction 突变结Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区Admittance 导纳Allowed band 允带Alloy-junction device 合金结器件Aluminum(Aluminium) 铝Aluminum – oxide 铝氧化物Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度Amorphous 无定形的，非晶体的Amplifier 功放扩音器放大器Analogue(Analog) comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Arsenic (AS) 砷Auger 俄歇Auger process 俄歇过程Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation 雪崩激发Bbrute-force attack 强力攻击Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ballasting resistor 整流电阻Ball bond 球形键合Band 能带Band gap 能带间隙Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency 基区输运系数Base-width modulation 基区宽度调制Basis vector 基矢Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT)双极晶体管Bloch 布洛赫Blocking band 阻挡能带Blocking contact 阻挡接触Body - centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Bootstrap circuit 自举电路Bootstrapped emitter follower 自举射极跟随器Boron 硼Borosilicate glass 硼硅玻璃Boundary condition 边界条件Bound electron 束缚电子Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊Brillouin zone 布里渊区Built-in 内建的Build-in electric field 内建电场Bulk 体/ 体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn - in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区CCaesar cipher 凯撒加密法capacitance 电容capturecategorize 分类chaining mode 链接模式challenge 质询cipher feedback 加密反馈collision 冲突combine 集成compatibility n.[计]兼容性component 原件confidentiality 保密性constraint 约束corresponding to 相应的Cryptography 密码学Can 外壳Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carrier 载流子、载波Carry bit 进位位Carry-in bit 进位输入Carry-out bit 进位输出Cascade 级联Case 管壳Cathode 阴极Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge neutrality condition 电中性条件Chargedrive/exchange/sharing/transfer/st1orage 电荷驱动/ 交换/ 共享/ 转移/ 存储Chemmical etching 化学腐蚀法Chemically-Polish 化学抛光Chemmically-Mechanically Polish (CMP) 化学机械抛光Chip 芯片Chip yield 芯片成品率Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-packed structure 密堆积结构Close-loop gain 闭环增益Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/ 集电极/ 发射极连接Common-gate/drain/source connection 共栅/ 漏/ 源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路ComplementaryMetal-Oxide-Semiconductor Field-Effect-Transistor(CMOS)互补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge) 导带( 底) Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 组态Conlomb 库仑Conpled Configuration Devices结构组态Constants 物理常数Constant energy surface 等能面Constant-source diffusion 恒定源扩散Contact 接触Contamination 治污Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Continuity condition 连续性条件Contra doping 反掺杂Controlled 受控的Converter 转换器Conveyer 传输器Copper interconnection system 铜互连系统Couping 耦合Covalent 共阶的Crossover 跨交Critical 临界的Crossunder 穿交Crucible 坩埚Crystaldefect/face/orientation/lattice 晶体缺陷/ 晶面/ 晶向/ 晶格Current density 电流密度Curvature 曲率Cut off 截止Current drift/dirve/sharing 电流漂移/ 驱动/ 共享Current Sense 电流取样Curvature 弯曲Custom integrated circuit 定制集成电路Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz 法直拉晶体J ）Ddedicate 专用的，单一的denial of service(DOS)拒绝服务攻击diffusion 扩散digital signature algorithm 数字签名算法dynamic 动态的Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Debye length 德拜长度De.broglie 德布洛意Decderate 减速Decibel (dB) 分贝Decode 译码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade)/Kelvin 摄氏/ 开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOSDepletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Die 芯片（复数dice ）Diode 二极管Dielectric 介电的Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffused junction 扩散结Diffusion 扩散2Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusioncapacitance/barrier/current/furnac e 扩散电容/ 势垒/ 电流/ 炉Digital circuit 数字电路Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Discharge 放电Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacitance 分布电容istributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体oping concentration 掺杂浓度Double-diffusive MOS(DMOS) 双扩散MOS. Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/ 湿法氧化Dose 剂量Duty cycle 工作周期Dual-in-line package （DIP ）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Eexpertise 专长extractorEarly effect 厄利效应Early failure 早期失效Effective mass 有效质量Einstein relation(ship) 爱因斯坦关系Electric Erase ProgrammableRead Only Memory(E2PROM)一次性电可擦除只读存储器Electrode 电极Electrominggratim 电迁移Electron affinity 电子亲和势Electronic -grade 电子能Electron-beam photo-resistexposure 光致抗蚀剂的电子束曝光Electron gas 电子气Electron-grade water 电子级纯水Electron trapping center 电子俘获中心Electron V olt (eV) 电子伏Electrostatic 静电的Element 元素/ 元件/ 配件Elemental semiconductor 元素半导体Ellipse 椭圆Ellipsoid 椭球Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量- 动量(E-K) 图Enhancement mode 增强型模式Enhancement MOS 增强性MOS Entefic ( 低) 共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Expitaxy 外延Equivalent curcuit 等效电路Equilibrium majority /minoritycarriers 平衡多数/ 少数载流子Erasable Programmable ROM(EPROM) 可搽取（编程）存储器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Ffabrication伪造fleshed outFace - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快界面态Feedback 反馈Fermi level 费米能级Fermi-Dirac Distribution 费米-狄拉克布Femi potential 费米势Fick equation 菲克方程（扩散）Field effect transistor 场效应晶体管Field oxide 场氧化层Filled band 满带Film 薄膜Flash memory 闪烁存储器Flat band 平带Flat pack 扁平封装Flicker noise 闪烁（变）噪声Flip-flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Forbidden band 禁带Forward bias 正向偏置Forward blocking /conducting 正向阻断/ 导通Frequency deviation noise 频率3漂移噪声Frequency response 频率响应Function 函数GgridGain 增益Gallium-Arsenide(GaAs) 砷化钾Gamy ray r 射线Gate 门、栅、控制极Gate oxide 栅氧化层Gauss （ian ）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生- 复合Geometries 几何尺寸Germanium(Ge) 锗Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Grown junction 生长结Guard ring 保护环Gummel-Poom model 葛谋- 潘模型Gunn - effect 狄氏效应Hhandle 处理hierarchical 层次Hardened device 辐射加固器件Heat of formation 形成热Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂Hell - effect 霍尔效应Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor （HBT ）异质结双极型晶体High field property 高场特性High-performance MOS.( H-MOS) 高性能MOS.Hormalized 归一化Horizontal epitaxial reactor 卧式外延反应器Hot carrior 热载流子Hybrid integration 混合集成Iimplementinductance 电感initialization vector IV初始化向量integrity完整性interception 截获interruption中断Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Indium tin oxide (ITO) 铟锡氧化物Induced channel 感应沟道Infrared 红外的Injection 注入Input offset voltage 输入失调电压Insulator 绝缘体Insulated Gate FET(IGFET) 绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Jjava applet Java小程序Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Kkey wrapping 密钥包装LLatch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Latticebinding/cell/constant/defect/distortion 晶格结合力/ 晶胞/ 晶格/ 晶格常熟/ 晶格缺陷/ 晶格畸变Leakage current （泄）漏电流Level shifting 电平移动Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid －phase epitaxial growthtechnique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Load line or Variable 负载线Locating and Wiring 布局布线Longitudinal 纵向的Logic swing 逻辑摆幅Lorentz 洛沦兹Lumped model 集总模型4Mmasquerade伪装message digest 消息摘要modification 修改multidrop 多站, 多支路Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law 质量守恒定律Master-slave D flip-flop 主从D 触发器Matching 匹配Maxwell 麦克斯韦Mean free path 平均自由程Meandered emitter junction 梳状发射极结Mean time before failure (MTBF) 平均工作时间Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体FET Metallization 金属化Microelectronic technique 微电子技术Microelectronics 微电子学Millen indices 密勒指数Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobile ions 可动离子Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片IC MOSFET 金属氧化物半导体场效应晶体管Mos. Transistor(MOST )MOS. 晶体管Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模块Multiplication coefficient 倍增因子N network level attack网络层攻击non-repudiation 不可抵赖Naked chip 未封装的芯片（裸片）Negative feedback 负反馈Negative resistance 负阻Nesting 套刻Negative-temperature-coefficient负温度系数Noise margin 噪声容限Nonequilibrium 非平衡Nonrolatile 非挥发（易失）性Normally off/on 常闭/ 开Numerical analysis 数值分析Ooptimize 使最优化Occupied band 满带Officienay 功率Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon =photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Outline 外形Out-of-contact mask 非接触式掩模Output characteristic 输出特性Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Pparallelparasitic 寄生的partition [简明英汉词典]n.分割,划分, 瓜分, 分开, 隔离物vt.区分, 隔开, 分割presentation n.介绍, 陈述, 赠送,表达primitiveprivateprobablyproceedingprofoundpropertypseudocollision伪冲突Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Passination 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Periodic table 周期表Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photoenic devices 光子器件Photolithographic process 光刻工艺(photo) resist （光敏）抗腐蚀剂Pin 管脚5Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plezoelectric effect 压电效应Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly-silicon 多晶硅Potential ( 电) 势Potential barrier 势垒Potential well 势阱Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Principal axes 主轴Print-circuit board(PCB) 印制电路板Probability 几率Probe 探针Process 工艺Propagation delay 传输延时Pseudopotential method 膺势发Punch through 穿通Pulse triggering/modulating 脉冲触发/ 调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push-pull stage 推挽级QQuality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi –Fermi －level 准费米能级Quartz 石英Rrelease of message contents发布消息内容register 寄存器registration 注册, 报到, 登记resistance 电阻routingrunning key cipher 运动密钥加密法Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination 辐照复合Radioactive 放射性Reach through 穿通Reactive sputtering source 反应溅射源Read diode 里德二极管Recombination 复合Recovery diode 恢复二极管Reciprocal lattice 倒核子Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Reference 基准点基准参考点Refractive index 折射率Register 寄存器Registration 对准Regulate 控制调整Relaxation lifetime 驰豫时间Reliability 可*性Resonance 谐振Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Relaxation 驰豫Resonant frequency 共射频率Response time 响应时间Reverse 反向的Reverse bias 反向偏置Sscratchscratchpad缓存secret 密钥substrate 衬底synchronizesynthesizesymmetric key cryptography 对称密钥加密sophisticate 复杂的suspend 悬挂，延缓Sampling circuit 取样电路Sapphire 蓝宝石（Al2O3 ）Satellite valley 卫星谷Saturated current range 电流饱和区Saturation region 饱和区Saturation 饱和的Scaled down 按比例缩小Scattering 散射Schockley diode 肖克莱二极管Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Schrodingen 薛定厄Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor-controlled rectifier可控硅Sendsitivity 灵敏度Serial 串行/ 串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shield 屏蔽Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘硅Siliver whiskers 银须6Simple cubic 简立方Single crystal 单晶Sink 沉Skin effect 趋肤效应Snap time 急变时间Sneak path 潜行通路Sulethreshold 亚阈的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Specific heat(PT) 热Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spreading resistance 扩展电阻Sputter 溅射Stacking fault 层错Static characteristic 静态特性Stimulated emission 受激发射Stimulated recombination 受激复合Storage time 存储时间Stress 应力Straggle 偏差Sublimation 升华Substrate 衬底Substitutional 替位式的Superlattice 超晶格Supply 电源Surface 表面Surge capacity 浪涌能力Subscript 下标Switching time 开关时间Switch 开关Ttoken 令牌trace 追溯traffic analysis 分析通信量Trojan horse 特洛伊木马Tailing 扩展Terminal 终端Tensor 张量Tensorial 张量的Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thermoelectricpovoer 温差电动势率Thick-film technique 厚膜技术Thin-film hybrid IC 薄膜混合集成电路Thin-Film Transistor(TFT) 薄膜晶体Threshlod 阈值Thyistor 晶闸管Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Triangle generator 三角波发生器Triboelectricity 摩擦电Trigger 触发Trim 调配调整Triple diffusion 三重扩散Truth table 真值表Tolerahce 容差Tunnel(ing) 隧道（穿）Tunnel current 隧道电流Turn over 转折Turn - off time 关断时间UUltraviolet 紫外的Unijunction 单结的Unipolar 单极的Unit cell 原（元）胞Unity-gain frequency 单位增益频率Unilateral-switch 单向开关Vvarietyvectorverify 检验victoryverticalvia 通孔virus病毒Vacancy 空位Vacuum 真空Valence(value) band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Varistor 变阻器Vibration 振动Voltage 电压WWorm 蠕虫Wafer 晶片Wave equation 波动方程Wave guide 波导Wave number 波数Wave-particle duality 波粒二相性Wear-out 烧毁Wire routing 布线Work function 功函数Worst-case device 最坏情况器件YYield 成品率ZZener breakdown 齐纳击穿Zone melting 区熔法7。

半导体行业英语专业术语

半导体行业英语专业术语1.Angle of incidence：入射角。

2.Dielectric：介电质。

3.Epitaxial Growth：外延生长。

4.Junction：结。

5.MOS transistor：MOS晶体管。

6.Lithography：光刻。

7.Photoresist：光刻胶。

8.Picking：取片。

9.Reflow soldering：热风焊接。

10.Deposition：沉积。

11.Diffusion：扩散。

12.Doping：掺杂。

13.Epitaxy：外延。

14.Furnace：炉。

15.Gate oxide：栅极氧化层。

16.Grinding：研磨。

17.Ion Implantation：离子注入。

18.Polishing：抛光。

19.Substrate：基底。

20.Chip：芯片。

21.Wafer：晶圆。

22.Yield：良率。

23.Masking：掩模。

24.Electrical Characterization：电性测试。

25.Suitability Test：可靠性测试。

26.Failure Analysis：失效分析。

27.Annealing：退火。

28.Threshold Voltage：阈值电压。

29.Voltage Transfer Curve：电压传递曲线。

30.Contact Resistance：接触电阻。

31.Electromigration：电迁移。

32.Inspection：检验。

33.CMP：表面处理。

34.CVD：化学气相沉积。

35.Metallization：金属化。

36.Microscopy：显微镜。

37.Ohmic Contact：正性接触。

38.Oxidation：氧化。

39.PECVD：电演化学气相沉积。

40.Photolithography：光刻工艺。

41.Sputtering：溅射。

42.Thermal Oxidation：热氧化。

电介质极化对电容的影响英文

电介质极化对电容的影响英文The Impact of Dielectric Polarization on Capacitance.Dielectric polarization is a crucial phenomenon that significantly affects the capacitance of capacitors. Inthis article, we will explore the relationship between dielectric polarization and capacitance, discussing how it affects the performance of capacitors in various applications.Dielectrics are materials that can be found in three different states: gas, solid, and liquid. They are widely used in electrical devices as insulating materials. When placed in an electric field, dielectrics exhibit electrical phenomena such as polarization, conduction, and loss. Polarization, in particular, is a critical aspect of dielectric behavior that has a profound impact on capacitance.Dielectric polarization occurs when a dielectricmaterial is placed in an electric field. This process involves the displacement of bound charges within the material, leading to the formation of electric dipoles. The polarization of the dielectric material effectively weakens the external electric field, resulting in an increase in the equivalent capacitance of the system.The polarization of dielectrics can be further classified into two types: orientation polarization and induction polarization. Orientation polarization occurs when the dielectric molecules themselves possess permanent electric dipoles, and the external electric field only modifies the orientation of these dipoles. Materials that exhibit orientation polarization typically include azobenzene and liquid crystals. On the other hand, induction polarization occurs when the dielectric molecules do not possess permanent dipoles but are polarized by the external electric field. This type of polarization is common in materials such as water molecules and inorganic ion crystals.The polarization of dielectrics has a direct impact oncapacitance. As the dielectric material极化, it produces polarization charges that alter the electric field distribution within the capacitor. This modification leadsto an increase in the capacitance of the system, allowingit to store more charge than it would without thedielectric. The polarization process effectively increases the effective area of the capacitor plates, resulting in a higher capacitance.In addition to increasing capacitance, dielectric polarization also affects other electrical properties of capacitors. For example, it can lower the dielectric constant of the material, which is a measure of its ability to respond to an electric field. As the polarization occurs, it reduces the electric field strength between thecapacitor plates, leading to a decrease in the dielectric constant. This reduction in the dielectric constant can affect the performance of capacitors in certain applications.Moreover, dielectric polarization can also impact the conductivity of the material. As the polarization processoccurs, it can restrict the movement of electrons within the dielectric, leading to a decrease in conductivity. This reduction in conductivity can affect the efficiency and performance of capacitors, particularly in high-frequency applications.Additionally, dielectric polarization has an influence on the thermal properties of capacitors. The polarization process can lead to the rearrangement of electrons within the dielectric, creating polarized regions. These polarized regions can cause internal heating and thermal losseswithin the capacitor, affecting its long-term stability and reliability.Polarized capacitors are a specific type of capacitor that utilizes dielectric polarization to store charge. These capacitors consist of a dielectric material sandwiched between two electrodes. They are designed to store charge and maintain a stable voltage across their terminals. Polarized capacitors are widely used in electronic circuits, signal processing, power circuits, and communication systems.In summary, dielectric polarization plays a crucialrole in determining the capacitance and overall performance of capacitors. By understanding the polarization processes and their impact on capacitance, we can design more effective and reliable capacitors for various applications. Future research in this area could lead to the development of new dielectric materials and improved capacitor technologies, further enhancing their performance and versatility.。

学术英语医学 Unit 2

• “New Flu Strain Spreads: Death Toll Reaches Half Million.”
• • • • •
1. 通行费 toll gate 2. (死亡、事故或灾难的)总数 3. 造成恶果(或不利影响、痛苦等) Winter takes its toll on your health... 冬天对健康不利。
•
•
Suggested answers
Page 26
Unit 2 Resurgent and Emergent Diseases
Text A
Critical reading and thinking
Topics for presentation
“Old enemies never die.”
Page 26 - 30
Unit 2 Resurgent and Emergent Diseases
• “New Flu Strain Spreads: Death Toll Reaches Half Million.”
• • • • • •
1. (人的)血缘,世系;种 She is of a noble strain. 她出身名门。 2. (动植物的)种,品种 This strain of wheat can grow during a cold spring. 这种品系的小麦能在寒冷的春天生长。
Text C
Suggested answers
Key to Task 2 of Listening
• the mission of Project HOPE center – Diabetes clinic with the latest diagnostic and treatment options – Peer support groups to help people • manage their disease • make healthier lifestyle changes – Training government health workers about NCDs to help raise general awareness

耦合关联度

耦合关联度Coupling correlation, a concept that finds its application in various fields such as physics, engineering, and social sciences, refers to the degree of interconnectedness and interdependence between two or more systems or variables. In the realm of physics, for instance, it describes how different systems interact and influence each other, whether through direct contact or via mediating forces.耦合关联度是一个广泛应用于物理学、工程学和社会科学等多个领域的概念，它指的是两个或多个系统或变量之间的相互联系和相互依赖的程度。

在物理学领域，它描述了不同系统之间如何相互作用和影响彼此，这种相互作用可能是通过直接接触或通过中介力量来实现的。

In engineering, coupling correlation plays a pivotal role in system design and analysis. It determines the extent to which changes in one component or subsystem affect the overall performance of the entire system. Engineers strive to minimize unwanted coupling to ensure stability and efficiency, while also leveraging beneficial coupling to enhance system functionality.在工程学领域，耦合关联度在系统设计和分析中起着至关重要的作用。

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0955-2219/$ – see front matter © 2006 Elsevier Ltd. All rights reserved. doi:10.1016/j.jeurceramsoc.2006.02.002
2862
S. Kamba et al. / Journal of the European Ceramic Society 26 (2006) 2861–2865
∗
Corresponding author. Tel.: +420 266 052 957; fax: +420 286 890 527. E-ma. Kamba).
tion to a triclinic structure occurs if the ceramic is heated above 1020 ◦ C.3 Orthorhombic BiNbO4 is antiferroelectric at room temperature, but becomes ferroelectric at 360 ◦ C and paraelectric at 570 ◦ C.4,5 BiNbO4 has the same structure as the mineral stibiotantalite (Sb0.9 Bi0.1 )(Ta0.84 Nb0.16 )O4 and crystallizes in the orthorhombic space group Pnma (D16 2h ) with 4 formula units per unit cell.6 The structure can be viewed as a pseudo-layered structure in which layers of corner sharing NbO6 octahedra are separated along the b-axis by Bi atoms.6 The sintering temperature can be further reduced by various additives like V2 O5 ,7,8 CuO,9,10 CeO2 ,11 B2 O3 ,12 ZnO13 or Sb2 O5 .14 In the last case a sintering temperature as low as 820 ◦ C was reached. Valant and Suvorov15 have shown that unfortunately BiNbO4 reacts with silver electrodes but much cheaper copper electrodes can be used. Lattice dynamics of BiNbO4 ceramics was investigated using Raman and infrared (IR) spectroscopy by Ayyub et al.5,16 IR transmission spectra were taken from the BiNbO4 powder dispersed in KBr (above 400 cm−1 ) and in polyethylene (between 20 and 180 cm−1 ) pellets. Factor-group analysis of the optic phonons in the orthorhombic phase yieldsΓopt = 8Ag (x2 ) + 8Au (−) + 9B1g (xy) + 8B1u (z) + 10B2g (xz) + 9B2u (y) + 9B3g (yz) + 8B3u (x)which means that 36 modes can be expected in
Raman spectra, 25 modes should be IR active and 8 modes are silent (Raman and IR inactive). Ayyub et al. observed 19 modes in Raman and 21 modes in IR spectra. Raman spectra did not show any difference between 150 and 300 K. It means that the crystal structure probably does not change between these temperatures. Our IR reﬂectivity and time-domain THz transmission studies of bulk BiNbO4 ceramics allow us to determine the complex dielectric response between 4 and 3000 cm−1 and correlate it with the MW dielectric response. It is well-established that the MW permittivity in materials with ε ≤ 100 is determined mainly by contributions of polar optic phonons and that the intrinsic dielectric loss should be in most cases proportional to the frequency between MW and THz range.17 This allows us to determine if there is some extrinsic contribution to MW losses in our ceramics, i.e., if one could improve the sample processing to obtain lower MW losses. 2. Experimental A set of Bi(Nb1−x Vx )O4 ceramics with various amount of vanadium was prepared (see Table 1). The sample processing was described in detail in ref. 8 The sintering was performed under ambient atmosphere. All the samples had densities higher than 95% of the theoretical value (7.35 g/cm3 ). The ε and Qvalues are not signiﬁcantly inﬂuenced by vanadium addition. The x = 0.004 sample has somewhat lower value of ε due to its lower density. It is seen that the addition of 3.2% of vanadium reduces the sintering temperature to 850 ◦ C and the MW properties and density remain almost the same. The XRD pattern conﬁrmed the orthorhombic structure of all the samples (see Fig. 1). The MW dielectric properties at room temperature were measured using an 8720ES Network Analyzer at approximately 5 GHz using Hakki–Colemann method for measuring the TE01␦ modes. The τ f values were measured by putting the cylindrical samples in a TE01␦ cylindrical resonant cavity into a Delta 9023 temperature chamber. Time-domain THz spectroscopy measurements were performed in the transmission mode using an ampliﬁed femtosecond laser system; two identical 1 mm thick [1 1 0] ZnTe single crystals were used to generate (by optic rectiﬁcation) and detect (by electro-optic sampling) the THz pulses. Other details of the setup are described elsewhere.18 Our THz technique allows the determination of the complex dielectric response, ε* (ω) = ε (ω) − iε (ω), in the range from 3 to 80 cm−1
Journal of the European Ceramic Society 26 (2006) 2861–2865
Correlation between infrared, THz and microwave dielectric properties of vanadium doped antiferroelectric BiNbO4
Stanislav Kamba a,∗ , Hong Wang b , Milan Berta a , Filip Kadlec a , Jan Petzelt a , Di Zhou b , Xi Yao b