WAT测试方法

3. Junction
WAT Item Name (以 N+/PW junction为例) : CNj IleakNj BvNj
Item name Cj Ileak Bv
Method of measurement
Vg=0V, Vb=GND, apply a 0.03V AC signal to measure C value, Cj=C/Area Vg=1.1Vdd, measure Ig, Ileak=Ig/Area Vb=0, sweep Vg from 0V to Vgstop(<3Vdd), measure Ig, Bv=Vg@Ig=100pA/um2
4. Gate Oxide
WAT Item Name(以PW gate oxide为例) : Cgpw Toxpw BvCgpw
Item name Cox Tox Bv
Method of measurement
Vg=Vdd, Vb=GND, apply a 0.03V AC signal to measure C value, Cox=C/Area Vg=GND, Vb=Vdd, apply a 0.03V AC signal to measure Cox value, Tox=(εo *εox *Area)/Cox Vb=0, sweep Vg from 0V to Vgstop(<3Vdd), measure Ig, Bv=Vg@Ig=100pA/um2
wat20080307watintroductionwat测试项目及方法waferacceptancetest晶片允收测试半导体硅片在完成所有制程工艺后针对硅片上的各种测试结构所进行的电性测试通过对wat数据的分析我们可以发现半导体制程工艺中的问题帮助制程工艺进行调整
WAT 测量项目以及测试方法
2008/03/07
NOTE: If there has a dummy capacitor, Cdummy should be subtracted.(Cox=Cox-Cdummy)
5. Resistor
Sheet resistance (RsN+/P+/NW/Poly/Metal)
Item name Rs
Method of measurement
Vh=1V, measure Ih, Rs=(Vh/Ih)/Sqr
Contact Resistance (RcN+/P+/Via)
P a d
M 1
P a d
N + P
N + W e l l
N +
Item name Rc
Method of measurement
Vh=1V, Vl=GND, measure Ih, Rs=[(Vh/Ih)(Rsn*Wn/Ln+Rsm*Wm/Lm)*1/2*Ncon)]/Ncon
WAT Introduction
1. WAT是什么 2. WAT系统介绍 3. WAT测试项目及方法
WAT是什么 是什么? 是什么
Wafer Acceptance Test（晶片允收测试 ）
半导体硅片在完成所有制程工艺后，针 对硅片上的各种测试结构所进行的电性测试 。 通过对WAT数据的分析，我们可以发现 半导体制程工艺中的问题，帮助制程工艺进 行调整。
Probe card Wafer
PIN No SMU
Auto-Prober
Relay Metric
WAT测试项目
常见的几种器件结构
1. MOS device 2. Field Device 3. Junction 4. Gate Oxide 5. Resistor 6. Bipolar Device 7. Layout Rule Check
Agilent E4411B Spectrum Analyzer Agilent 81110A Pulse Generator
HP 4070 Server
Agilent 3458A Digit Multimeter Agilent 4284A CV Meter
WAT 流程图
Data Data EDA Server Product information Test Program Control command Test Key Server CV Meter DC tester 4070 Server
Vh=1.1Vdd, measure Ih, Ibri=Ih
Thanks!
1. MOS Device
S
G Pad
D
Sub
Pad
Metal 1 Poly
Pad
Pad
Ti s ilic ide
G S D
NN-
STI
N+
N+
STI
P+
Gate o xide
P-substrate
为例： 以 NMOS 为例：
Item name Ids Vt0 Vt1 Isub Ioff Bvd Method of measurement
WAT系统介绍
Agilent 4284A CV Meter
Manual Prober
Agilent 4156A IV Meter
Cascade Manual Prober
WAT系统介绍
Agilent 4070
Agilent 4070 system
TEL P8XL
WAT系统介绍
Agilent 4070 内部结构
Note: Rc need to subtract active & Metal resistor, RsMetal can be ignored due to metal resistor is very small.
6. Bipolar Device
B Pad
E Pad M1
C Pad
WAT Item Name(以 NPN为例):
Vd=Vg=Vdd, Vs=Vb=0, measure Id, Ids=Id/Width Vd=0.1V, Vs=Vb=0, sweep Vg from 0V to 3V, use maximum slope method,Vt0=Xintercept –1/2*Vd Vd=0.1V, Vs=Vb=0, sweep Vg from 0V to 2V,measure Id,Vt1=Vg@Id=0.1uA*Width/Length Vd=Vdd, Vs=Vg=0, sweep Vg from 0 to Vdd to get maximum Isub current Vd=1.1Vdd, Vg=Vs=Vb=0, measure Id, Ioff=Id/Width Vg=Vs=Vb=0, sweep Vd from 0V to Vdstop(<3Vdd), measure Id, Bvd=Vd@Id=0.1uA/um
STI
N+
STI
P+
STI
HfeNpn BvNpn
N Well Psub
P+
STI
Item name Hfe Bv
Method of measurement
Ib=1uA, Vce=Vdd, Hfe=Ic/Ib Base floating, Sweep Vce from 0V to Vcestop(<3Vdd), measure Ic, Bv=Vce@Ic=1uA
2. Field Device
WAT Item Name(以Poly Nfield为例) : VtNfpS (field Vt) IleakNfpS VptNfpS (punchthrough Vt)
Item name Vt Ileak Vpt
Method of measurement
Vd=1.1Vdd, sweep Vg from 0V to Vgstop(<3Vdd),measure Id, Vt=Vg@Id=10nA/um Vg=Vd=1.1Vdd, measure Id, Ileak=Id/Width Vg=1.1Vdd, sweep Vd from 0V to Vdstop(<3Vdd),measure Id, Vpt=Vd@Id=10nA/um
7. Layout Rule Check
பைடு நூலகம்
NW/N+ Poly/N+ active/Metal bridge
WAT Item Name(以 NW bridge为例): IbriNW
PAD PAD
STI
NW PW NW PW NW PW NW
Item name Ibri
Method of measurement