philips PBSS5540Z PNP medium power transistor 数据手册

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DATA SHEET
handbook, halfpage
M3D087
PBSS5540Z
PNP medium power transistor Preliminary specification1999Aug04
PNP medium power transistor
PBSS5540Z
FEATURES
•High current (max.10A)•Low voltage (max.40V)•Low V CEsat .APPLICATIONS
•Heavy duty battery powered equipment (Automotive,Telecom and Audio/Video) such as motor and lamp drivers
•V CEsat critical applications such as the latest low supply voltage IC applications
•All battery driven equipment to save battery power.
DESCRIPTION
PNP low V CEsat transistor in a SOT223 plastic package.NPN complement: PBSS4540Z.PINNING
PIN DESCRIPTION
1base 2collector 3emitter 4
collector
handbook, halfpage
4
12
3
MAM288
Top view
3
2, 4
1
Fig.1 Simplified outline (SOT223) and symbol.
MARKING CODE
TYPE NUMBER MARKING CODE
PBSS5540Z
PB5540
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).Note
1.Device mounted on a printed-circuit board,single-sided copper,tinplated,mounting pad for collector 1cm
2.For other
mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”.
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.UNIT
V CBO collector-base voltage open emitter −−40V V CEO collector-emitter voltage open base −−40V V EBO emitter-base voltage open collector
−−6V I C collector current (DC)−−5A I CM peak collector current −−10A I BM peak base current −−2A P tot total power dissipation T amb ≤25°C; note 1
− 1.35W T stg storage temperature −65+150°C T j junction temperature
−150°C T amb operating ambient temperature
−65+150
°C
PNP medium power transistor
PBSS5540Z
THERMAL CHARACTERISTICS Note
1.Device mounted on a printed-circuit board,single-sided copper,tinplated,mounting pad for collector 1cm
2.For other
mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”.CHARACTERISTICS
T j =25°C unless otherwise specified.Note
1.Pulse test: t p ≤300µs;δ≤0.0
2.
SYMBOL PARAMETER
CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient
note 1
92
K/W
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP .
MAX.UNIT I CBO collector cut-off current I E =0; V CB =−30V
−−−100nA I E =0; V CB =−30V; T j =150°C −−−50µA I EBO emitter cut-off current I C =0; V EB =−5V −−−100
nA
h FE
DC current gain
V CE =−2V;I C =−500mA 250350−I C =−1A; note 1200300−I C =−2A; note 1−225−I C =−5A; note 1
50100−V CEsat
collector-emitter saturation voltage
I C =−500mA; I B =−5mA −−85−130mV I C =−1A; I B =−10mA −−130−180mV I C =−2A; I B =−200mA −−150−210mV I C =−5A; I B =−500mA
−340460mV V BEsat base-emitter saturation voltage I C =−5A; I B =−500mA −−−1.3V V BEon base-emitter turn-on voltage V CE =−2V; I C =−2A −1.25−0.81−V C c collector capacitance I E =i e =0; V CB =−10V;f =1MHz
−92105pF f T transition frequency
I C =−500mA; V CE =−5V;f =100MHz
50
100
−
MHz
PNP medium power transistor
PBSS5540Z
PACKAGE OUTLINE
UNIT A 1b p c D E e 1H E L p Q y w v REFERENCES
OUTLINE VERSION EUROPEAN PROJECTION
ISSUE DATE IEC
JEDEC
EIAJ
mm
0.100.01
1.81.5
0.800.60
b 13.12.9
0.320.22
6.76.3
3.73.3
2.3
e 4.6
7.36.7
1.10.7
0.950.85
0.1
0.1
0.2
DIMENSIONS (mm are the original dimensions) SOT223
96-11-1197-02-28
w M b p
D b 1
e 1
e
A
A 1
L p
Q
detail X
H E
E v M A
A B B
c
y
02 4 mm
scale
A X
1
3
2
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
PNP medium power transistor PBSS5540Z
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
PNP medium power transistor PBSS5540Z
NOTES
PNP medium power transistor PBSS5540Z
NOTES
© Philips Electronics N.V.SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract,is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Internet:
1999
67
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115002/01/pp 8 Date of release:1999Aug 04
Document order number: 939775005263。