Design of an Immersive Teleconferencing Application
静电成像方式英语作文
静电成像方式英语作文Title: The Principle and Applications of Electrostatic Imaging。
Electrostatic imaging, a technique utilized in various fields including medical diagnostics, security screening, and scientific research, relies on the manipulation of electrostatic forces to generate images. This essay delves into the principle behind electrostatic imaging, its applications, and the advancements in this technology.### Principle of Electrostatic Imaging。
Electrostatic imaging operates on the fundamental principle of electrostatic attraction and repulsion. It involves the creation of an electric field between acharged object and a grounded substrate. When an object is charged, the electric field interacts with nearby particles, causing redistribution of charges and resulting invariations in the electric potential across the surface. Bymeasuring these potential differences, an image of theobject's surface or internal structure can be reconstructed.### Components of Electrostatic Imaging Systems。
Approaches for Molecular Sensors Design
Approaches for Molecular SensorsDesignMolecular sensors are essential tools for detecting and quantifying select moleculesin various samples using biological and chemical events. The design of molecular sensors is a crucial step in ensuring their specificity, sensitivity, and accuracy. Effective sensor design requires an understanding of the biological and chemical interactions involved in signal transduction, as well as the design requirements and constraints for the sensor's application. In this article, we explore some of the approaches used for molecular sensor design.1. Rational DesignRational design is a strategy that focuses on exploiting known molecular interactions and structural features to design a sensor that can detect a specific target molecule, or class of targets. This design approach involves studying the structure and function of the target molecule, identifying the key features that allow it to bind selectively to the sensor, and creating a sensor that mimics these features. Rational design is particularly useful when the target molecule has a well-established structure, and when the chemical and biological properties of the target molecule are well-defined. Examples of rational design approaches include the design of aptamer-based sensors and the design of synthetic receptors.2. High-Throughput ScreeningHigh-throughput screening (HTS) is a strategy that uses combinatorial chemistry and high-throughput techniques to identify molecular structures that can interact with a specific target molecule. This is accomplished by screening a large number of potential sensor molecules in parallel, using high-throughput techniques such as microarrays or combinatorial libraries. HTS is particularly useful when the target molecule is not well-defined or when the chemical or biological properties of the target molecule are unknown.Examples of high-throughput screening approaches include phage display and chemical library screening.3. Directed EvolutionDirected evolution is a strategy that involves creating a large population of sensor molecules, then subjecting the population to selective pressure to screen for molecules that can interact with a specific target molecule. This approach is based on the principles of evolution, with sensor molecules that exhibit the desired interaction with the target molecule being selected and amplified while those that do not interact are eliminated. Directed evolution is an effective approach when the target molecule is complex or when the desired interaction is unknown. Examples of directed evolution approaches include selection-based methods, such as SELEX and surface display methods.4. Rational-Combinatorial DesignRational-combinatorial design is a hybrid approach that combines aspects of rational design and high-throughput screening. This approach involves designing a sensor molecule based on known interactions and structural features, then using high-throughput techniques to screen a combinatorial library of sensor molecules for the desired interaction. Rational-combinatorial design is effective when the target molecule has both well-defined structure and unknown chemical or biological properties. Examples of rational-combinatorial design approaches include the design of molecularly imprinted polymers and the design of DNA-encoded libraries.In summary, the design of molecular sensors requires the use of various approaches and strategies, based on the nature of the target molecule and the specific application of the sensor. Rational design, high-throughput screening, directed evolution, and rational-combinatorial design are all valuable design approaches for molecular sensors. By understanding these approaches, researchers can develop effective molecular sensors with high specificity, sensitivity, and accuracy.。
IEEE Std 1159-1995,IEEE Recommended Practice for Monitoring Electric Power Quality
IEEE Std 1159-1995 IEEE Recommended Practice for Monitoring Electric Power QualitySponsorIEEE Standards Coordinating Committee 22 onPower QualityApproved June 14, 1995IEEE Standards BoardAbstract: The monitoring of electric power quality of ac power systems, definitions of power quality terminology, impact of poor power quality on utility and customer equipment, and the measurement of electromagnetic phenomena are covered.Keywords: data interpretation, electric power quality, electromagnetic phenomena, monitoring, power quality definitionsIEEE Standards documents are developed within the Technical Committees of the IEEE Societies and the Standards Coordinating Committees of the IEEE Standards Board. Members of the committees serve voluntarily and without compensation. They are not necessarily members of the Institute. The standards developed within IEEE represent a consensus of the broad expertise on the subject within the Institute as well as those activities outside of IEEE that have expressed an interest in partici-pating in the development of the standard.Use of an IEEE Standard is wholly voluntary. The existence of an IEEE Standard does not imply that there are no other ways to produce, test, measure, purchase, mar-ket, or provide other goods and services related to the scope of the IEEE Standard. Furthermore, the viewpoint expressed at the time a standard is approved and issued is subject to change brought about through developments in the state of the art and com-ments received from users of the standard. Every IEEE Standard is subjected to review at least every Þve years for revision or reafÞrmation. When a document is more than Þve years old and has not been reafÞrmed, it is reasonable to conclude that its contents, although still of some value, do not wholly reßect the present state of the art. Users are cautioned to check to determine that they have the latest edition of any IEEE Standard.Comments for revision of IEEE Standards are welcome from any interested party, regardless of membership afÞliation with IEEE. Suggestions for changes in docu-ments should be in the form of a proposed change of text, together with appropriate supporting comments.Interpretations: Occasionally questions may arise regarding the meaning of portions of standards as they relate to speciÞc applications. When the need for interpretations is brought to the attention of IEEE, the Institute will initiate action to prepare appro-priate responses. Since IEEE Standards represent a consensus of all concerned inter-ests, it is important to ensure that any interpretation has also received the concurrence of a balance of interests. For this reason IEEE and the members of its technical com-mittees are not able to provide an instant response to interpretation requests except in those cases where the matter has previously received formal consideration.Comments on standards and requests for interpretations should be addressed to:Secretary, IEEE Standards Board445 Hoes LaneP.O. Box 1331Piscataway, NJ 08855-1331USAIntroduction(This introduction is not part of IEEE Std 1159-1995, IEEE Recommended Practice for Monitoring Electric Power Quality.)This recommended practice was developed out of an increasing awareness of the difÞculty in comparing results obtained by researchers using different instruments when seeking to characterize the quality of low-voltage power systems. One of the initial goals was to promote more uniformity in the basic algorithms and data reduction methods applied by different instrument manufacturers. This proved difÞcult and was not achieved, given the free market principles under which manufacturers design and market their products. However, consensus was achieved on the contents of this recommended practice, which provides guidance to users of monitoring instruments so that some degree of comparisons might be possible.An important Þrst step was to compile a list of power quality related deÞnitions to ensure that contributing parties would at least speak the same language, and to provide instrument manufacturers with a common base for identifying power quality phenomena. From that starting point, a review of the objectives of moni-toring provides the necessary perspective, leading to a better understanding of the means of monitoringÑthe instruments. The operating principles and the application techniques of the monitoring instruments are described, together with the concerns about interpretation of the monitoring results. Supporting information is provided in a bibliography, and informative annexes address calibration issues.The Working Group on Monitoring Electric Power Quality, which undertook the development of this recom-mended practice, had the following membership:J. Charles Smith, Chair Gil Hensley, SecretaryLarry Ray, Technical EditorMark Andresen Thomas Key John RobertsVladi Basch Jack King Anthony St. JohnRoger Bergeron David Kreiss Marek SamotyjJohn Burnett Fran•ois Martzloff Ron SmithJohn Dalton Alex McEachern Bill StuntzAndrew Dettloff Bill Moncrief John SullivanDave GrifÞth Allen Morinec David VannoyThomas Gruzs Ram Mukherji Marek WaclawlakErich Gunther Richard Nailen Daniel WardMark Kempker David Pileggi Steve WhisenantHarry RauworthIn addition to the working group members, the following people contributed their knowledge and experience to this document:Ed Cantwell Christy Herig Tejindar SinghJohn Curlett Allan Ludbrook Maurice TetreaultHarshad MehtaiiiThe following persons were on the balloting committee:James J. Burke David Kreiss Jacob A. RoizDavid A. Dini Michael Z. Lowenstein Marek SamotyjW. Mack Grady Fran•ois D. Martzloff Ralph M. ShowersDavid P. Hartmann Stephen McCluer J. C. SmithMichael Higgins A. McEachern Robert L. SmithThomas S. Key W. A. Moncrief Daniel J. WardJoseph L. KoepÞnger P. Richman Charles H. WilliamsJohn M. RobertsWhen the IEEE Standards Board approved this standard on June 14, 1995, it had the following membership:E. G. ÒAlÓ Kiener, Chair Donald C. Loughry,Vice ChairAndrew G. Salem,SecretaryGilles A. Baril Richard J. Holleman Marco W. MigliaroClyde R. Camp Jim Isaak Mary Lou PadgettJoseph A. Cannatelli Ben C. Johnson John W. PopeStephen L. Diamond Sonny Kasturi Arthur K. ReillyHarold E. Epstein Lorraine C. Kevra Gary S. RobinsonDonald C. Fleckenstein Ivor N. Knight Ingo RuschJay Forster*Joseph L. KoepÞnger*Chee Kiow TanDonald N. Heirman D. N. ÒJimÓ Logothetis Leonard L. TrippL. Bruce McClung*Member EmeritusAlso included are the following nonvoting IEEE Standards Board liaisons:Satish K. AggarwalRichard B. EngelmanRobert E. HebnerChester C. TaylorRochelle L. SternIEEE Standards Project EditorivContentsCLAUSE PAGE 1.Overview (1)1.1Scope (1)1.2Purpose (2)2.References (2)3.Definitions (2)3.1Terms used in this recommended practice (2)3.2Avoided terms (7)3.3Abbreviations and acronyms (8)4.Power quality phenomena (9)4.1Introduction (9)4.2Electromagnetic compatibility (9)4.3General classification of phenomena (9)4.4Detailed descriptions of phenomena (11)5.Monitoring objectives (24)5.1Introduction (24)5.2Need for monitoring power quality (25)5.3Equipment tolerances and effects of disturbances on equipment (25)5.4Equipment types (25)5.5Effect on equipment by phenomena type (26)6.Measurement instruments (29)6.1Introduction (29)6.2AC voltage measurements (29)6.3AC current measurements (30)6.4Voltage and current considerations (30)6.5Monitoring instruments (31)6.6Instrument power (34)7.Application techniques (35)7.1Safety (35)7.2Monitoring location (38)7.3Equipment connection (41)7.4Monitoring thresholds (43)7.5Monitoring period (46)8.Interpreting power monitoring results (47)8.1Introduction (47)8.2Interpreting data summaries (48)8.3Critical data extraction (49)8.4Interpreting critical events (51)8.5Verifying data interpretation (59)vANNEXES PAGE Annex A Calibration and self testing (informative) (60)A.1Introduction (60)A.2Calibration issues (61)Annex B Bibliography (informative) (63)B.1Definitions and general (63)B.2Susceptibility and symptomsÑvoltage disturbances and harmonics (65)B.3Solutions (65)B.4Existing power quality standards (67)viIEEE Recommended Practice for Monitoring Electric Power Quality1. Overview1.1 ScopeThis recommended practice encompasses the monitoring of electric power quality of single-phase and polyphase ac power systems. As such, it includes consistent descriptions of electromagnetic phenomena occurring on power systems. The document also presents deÞnitions of nominal conditions and of deviations from these nominal conditions, which may originate within the source of supply or load equipment, or from interactions between the source and the load.Brief, generic descriptions of load susceptibility to deviations from nominal conditions are presented to identify which deviations may be of interest. Also, this document presents recommendations for measure-ment techniques, application techniques, and interpretation of monitoring results so that comparable results from monitoring surveys performed with different instruments can be correlated.While there is no implied limitation on the voltage rating of the power system being monitored, signal inputs to the instruments are limited to 1000 Vac rms or less. The frequency ratings of the ac power systems being monitored are in the range of 45Ð450 Hz.Although it is recognized that the instruments may also be used for monitoring dc supply systems or data transmission systems, details of application to these special cases are under consideration and are not included in the scope. It is also recognized that the instruments may perform monitoring functions for envi-ronmental conditions (temperature, humidity, high frequency electromagnetic radiation); however, the scope of this document is limited to conducted electrical parameters derived from voltage or current measure-ments, or both.Finally, the deÞnitions are solely intended to characterize common electromagnetic phenomena to facilitate communication between various sectors of the power quality community. The deÞnitions of electromagnetic phenomena summarized in table 2 are not intended to represent performance standards or equipment toler-ances. Suppliers of electricity may utilize different thresholds for voltage supply, for example, than the ±10% that deÞnes conditions of overvoltage or undervoltage in table 2. Further, sensitive equipment may mal-function due to electromagnetic phenomena not outside the thresholds of the table 2 criteria.1IEEEStd 1159-1995IEEE RECOMMENDED PRACTICE FOR 1.2 PurposeThe purpose of this recommended practice is to direct users in the proper monitoring and data interpretation of electromagnetic phenomena that cause power quality problems. It deÞnes power quality phenomena in order to facilitate communication within the power quality community. This document also forms the con-sensus opinion about safe and acceptable methods for monitoring electric power systems and interpreting the results. It further offers a tutorial on power system disturbances and their common causes.2. ReferencesThis recommended practice shall be used in conjunction with the following publications. When the follow-ing standards are superseded by an approved revision, the revision shall apply.IEC 1000-2-1 (1990), Electromagnetic Compatibility (EMC)ÑPart 2 Environment. Section 1: Description of the environmentÑelectromagnetic environment for low-frequency conducted disturbances and signaling in public power supply systems.1IEC 50(161)(1990), International Electrotechnical V ocabularyÑChapter 161: Electromagnetic Compatibility. IEEE Std 100-1992, IEEE Standard Dictionary of Electrical and Electronic Terms (ANSI).2IEEE Std 1100-1992, IEEE Recommended Practice for Powering and Grounding Sensitive Electronic Equipment (Emerald Book) (ANSI).3. DeÞnitionsThe purpose of this clause is to present concise deÞnitions of words that convey the basic concepts of power quality monitoring. These terms are listed below and are expanded in clause 4. The power quality commu-nity is also pervaded by terms that have no scientiÞc deÞnition. A partial listing of these words is included in 3.2; use of these terms in the power quality community is discouraged. Abbreviations and acronyms that are employed throughout this recommended practice are listed in 3.3.3.1 Terms used in this recommended practiceThe primary sources for terms used are IEEE Std 100-19923 indicated by (a), and IEC 50 (161)(1990) indi-cated by (b). Secondary sources are IEEE Std 1100-1992 indicated by (c), IEC-1000-2-1 (1990) indicated by (d) and UIE -DWG-3-92-G [B16]4. Some referenced deÞnitions have been adapted and modiÞed in order to apply to the context of this recommended practice.3.1.1 accuracy: The freedom from error of a measurement. Generally expressed (perhaps erroneously) as percent inaccuracy. Instrument accuracy is expressed in terms of its uncertaintyÑthe degree of deviation from a known value. An instrument with an uncertainty of 0.1% is 99.9% accurate. At higher accuracy lev-els, uncertainty is typically expressed in parts per million (ppm) rather than as a percentage.1IEC publications are available from IEC Sales Department, Case Postale 131, 3, rue de VarembŽ, CH-1211, Gen•ve 20, Switzerland/ Suisse. IEC publications are also available in the United States from the Sales Department, American National Standards Institute, 11 West 42nd Street, 13th Floor, New York, NY 10036, USA.2IEEE publications are available from the Institute of Electrical and Electronics Engineers, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1331, USA.3Information on references can be found in clause 2.4The numbers in brackets correspond to those bibliographical items listed in annex B.2IEEE MONITORING ELECTRIC POWER QUALITY Std 1159-1995 3.1.2 accuracy ratio: The ratio of an instrumentÕs tolerable error to the uncertainty of the standard used to calibrate it.3.1.3 calibration: Any process used to verify the integrity of a measurement. The process involves compar-ing a measuring instrument to a well defined standard of greater accuracy (a calibrator) to detect any varia-tions from specified performance parameters, and making any needed compensations. The results are then recorded and filed to establish the integrity of the calibrated instrument.3.1.4 common mode voltage: A voltage that appears between current-carrying conductors and ground.b The noise voltage that appears equally and in phase from each current-carrying conductor to ground.c3.1.5 commercial power: Electrical power furnished by the electric power utility company.c3.1.6 coupling: Circuit element or elements, or network, that may be considered common to the input mesh and the output mesh and through which energy may be transferred from one to the other.a3.1.7 current transformer (CT): An instrument transformer intended to have its primary winding con-nected in series with the conductor carrying the current to be measured or controlled.a3.1.8 dip: See: sag.3.1.9 dropout: A loss of equipment operation (discrete data signals) due to noise, sag, or interruption.c3.1.10 dropout voltage: The voltage at which a device fails to operate.c3.1.11 electromagnetic compatibility: The ability of a device, equipment, or system to function satisfacto-rily in its electromagnetic environment without introducing intolerable electromagnetic disturbances to any-thing in that environment.b3.1.12 electromagnetic disturbance: Any electromagnetic phenomena that may degrade the performance of a device, equipment, or system, or adversely affect living or inert matter.b3.1.13 electromagnetic environment: The totality of electromagnetic phenomena existing at a given location.b3.1.14 electromagnetic susceptibility: The inability of a device, equipment, or system to perform without degradation in the presence of an electromagnetic disturbance.NOTEÑSusceptibility is a lack of immunity.b3.1.15 equipment grounding conductor: The conductor used to connect the noncurrent-carrying parts of conduits, raceways, and equipment enclosures to the grounded conductor (neutral) and the grounding elec-trode at the service equipment (main panel) or secondary of a separately derived system (e.g., isolation transformer). See Section 100 in ANSI/NFPA 70-1993 [B2].3.1.16 failure mode: The effect by which failure is observed.a3.1.17 ßicker: Impression of unsteadiness of visual sensation induced by a light stimulus whose luminance or spectral distribution fluctuates with time.b3.1.18 frequency deviation: An increase or decrease in the power frequency. The duration of a frequency deviation can be from several cycles to several hours.c Syn.: power frequency variation.3.1.19 fundamental (component): The component of an order 1 (50 or 60 Hz) of the Fourier series of a periodic quantity.b3IEEEStd 1159-1995IEEE RECOMMENDED PRACTICE FOR 3.1.20 ground: A conducting connection, whether intentional or accidental, by which an electric circuit or piece of equipment is connected to the earth, or to some conducting body of relatively large extent that serves in place of the earth.NOTEÑ It is used for establishing and maintaining the potential of the earth (or of the conducting body) or approxi-mately that potential, on conductors connected to it, and for conducting ground currents to and from earth (or the con-ducting body).a3.1.21 ground loop: In a radial grounding system, an undesired conducting path between two conductive bodies that are already connected to a common (single-point) ground.3.1.22 harmonic (component): A component of order greater than one of the Fourier series of a periodic quantity.b3.1.23 harmonic content: The quantity obtained by subtracting the fundamental component from an alter-nating quantity.a3.1.24 immunity (to a disturbance): The ability of a device, equipment, or system to perform without deg-radation in the presence of an electromagnetic disturbance.b3.1.25 impulse: A pulse that, for a given application, approximates a unit pulse.b When used in relation to the monitoring of power quality, it is preferred to use the term impulsive transient in place of impulse.3.1.26 impulsive transient: A sudden nonpower frequency change in the steady-state condition of voltage or current that is unidirectional in polarity (primarily either positive or negative).3.1.27 instantaneous: A time range from 0.5Ð30 cycles of the power frequency when used to quantify the duration of a short duration variation as a modifier.3.1.28 interharmonic (component): A frequency component of a periodic quantity that is not an integer multiple of the frequency at which the supply system is designed to operate operating (e.g., 50 Hz or 60 Hz).3.1.29 interruption, momentary (power quality monitoring): A type of short duration variation. The complete loss of voltage (< 0.1 pu) on one or more phase conductors for a time period between 0.5 cycles and 3 s.3.1.30 interruption, sustained (electric power systems): Any interruption not classified as a momentary interruption.3.1.31 interruption, temporary (power quality monitoring):A type of short duration variation. The com-plete loss of voltage (< 0.1 pu) on one or more phase conductors for a time period between 3 s and 1 min.3.1.32 isolated ground: An insulated equipment grounding conductor run in the same conduit or raceway as the supply conductors. This conductor may be insulated from the metallic raceway and all ground points throughout its length. It originates at an isolated ground-type receptacle or equipment input terminal block and terminates at the point where neutral and ground are bonded at the power source. See Section 250-74, Exception #4 and Exception in Section 250-75 in ANSI/NFPA 70-1993 [B2].3.1.33 isolation: Separation of one section of a system from undesired influences of other sections.c3.1.34 long duration voltage variation:See: voltage variation, long duration.3.1.35 momentary (power quality monitoring): A time range at the power frequency from 30 cycles to 3 s when used to quantify the duration of a short duration variation as a modifier.4IEEE MONITORING ELECTRIC POWER QUALITY Std 1159-1995 3.1.36 momentary interruption:See: interruption, momentary.3.1.37 noise: Unwanted electrical signals which produce undesirable effects in the circuits of the control systems in which they occur.a (For this document, control systems is intended to include sensitive electronic equipment in total or in part.)3.1.38 nominal voltage (Vn): A nominal value assigned to a circuit or system for the purpose of conve-niently designating its voltage class (as 120/208208/120, 480/277, 600).d3.1.39 nonlinear load: Steady-state electrical load that draws current discontinuously or whose impedance varies throughout the cycle of the input ac voltage waveform.c3.1.40 normal mode voltage: A voltage that appears between or among active circuit conductors, but not between the grounding conductor and the active circuit conductors.3.1.41 notch: A switching (or other) disturbance of the normal power voltage waveform, lasting less than 0.5 cycles, which is initially of opposite polarity than the waveform and is thus subtracted from the normal waveform in terms of the peak value of the disturbance voltage. This includes complete loss of voltage for up to 0.5 cycles [B13].3.1.42 oscillatory transient: A sudden, nonpower frequency change in the steady-state condition of voltage or current that includes both positive or negative polarity value.3.1.43 overvoltage: When used to describe a specific type of long duration variation, refers to a measured voltage having a value greater than the nominal voltage for a period of time greater than 1 min. Typical val-ues are 1.1Ð1.2 pu.3.1.44 phase shift: The displacement in time of one waveform relative to another of the same frequency and harmonic content.c3.1.45 potential transformer (PT): An instrument transformer intended to have its primary winding con-nected in shunt with a power-supply circuit, the voltage of which is to be measured or controlled. Syn.: volt-age transformer.a3.1.46 power disturbance: Any deviation from the nominal value (or from some selected thresholds based on load tolerance) of the input ac power characteristics.c3.1.47 power quality: The concept of powering and grounding sensitive equipment in a manner that is suit-able to the operation of that equipment.cNOTEÑWithin the industry, alternate definitions or interpretations of power quality have been used, reflecting different points of view. Therefore, this definition might not be exclusive, pending development of a broader consensus.3.1.48 precision: Freedom from random error.3.1.49 pulse: An abrupt variation of short duration of a physical an electrical quantity followed by a rapid return to the initial value.3.1.50 random error: Error that is not repeatable, i.e., noise or sensitivity to changing environmental factors. NOTEÑFor most measurements, the random error is small compared to the instrument tolerance.3.1.51 sag: A decrease to between 0.1 and 0.9 pu in rms voltage or current at the power frequency for dura-tions of 0.5 cycle to 1 min. Typical values are 0.1 to 0.9 pu.b See: dip.IEEEStd 1159-1995IEEE RECOMMENDED PRACTICE FOR NOTEÑTo give a numerical value to a sag, the recommended usage is Òa sag to 20%,Ó which means that the line volt-age is reduced down to 20% of the normal value, not reduced by 20%. Using the preposition ÒofÓ (as in Òa sag of 20%,Óor implied by Òa 20% sagÓ) is deprecated.3.1.52 shield: A conductive sheath (usually metallic) normally applied to instrumentation cables, over the insulation of a conductor or conductors, for the purpose of providing means to reduce coupling between the conductors so shielded and other conductors that may be susceptible to, or that may be generating unwanted electrostatic or electromagnetic fields (noise).c3.1.53 shielding: The use of a conducting and/or ferromagnetic barrier between a potentially disturbing noise source and sensitive circuitry. Shields are used to protect cables (data and power) and electronic cir-cuits. They may be in the form of metal barriers, enclosures, or wrappings around source circuits and receiv-ing circuits.c3.1.54 short duration voltage variation:See: voltage variation, short duration.3.1.55 slew rate: Rate of change of ac voltage, expressed in volts per second a quantity such as volts, fre-quency, or temperature.a3.1.56 sustained: When used to quantify the duration of a voltage interruption, refers to the time frame asso-ciated with a long duration variation (i.e., greater than 1 min).3.1.57 swell: An increase in rms voltage or current at the power frequency for durations from 0.5 cycles to 1 min. Typical values are 1.1Ð1.8 pu.3.1.58 systematic error: The portion of error that is repeatable, i.e., zero error, gain or scale error, and lin-earity error.3.1.59 temporary interruption:See: interruption, temporary.3.1.60 tolerance: The allowable variation from a nominal value.3.1.61 total harmonic distortion disturbance level: The level of a given electromagnetic disturbance caused by the superposition of the emission of all pieces of equipment in a given system.b The ratio of the rms of the harmonic content to the rms value of the fundamental quantity, expressed as a percent of the fun-damental [B13].a Syn.: distortion factor.3.1.62 traceability: Ability to compare a calibration device to a standard of even higher accuracy. That stan-dard is compared to another, until eventually a comparison is made to a national standards laboratory. This process is referred to as a chain of traceability.3.1.63 transient: Pertaining to or designating a phenomenon or a quantity that varies between two consecu-tive steady states during a time interval that is short compared to the time scale of interest. A transient can be a unidirectional impulse of either polarity or a damped oscillatory wave with the first peak occurring in either polarity.b3.1.64 undervoltage: A measured voltage having a value less than the nominal voltage for a period of time greater than 1 min when used to describe a specific type of long duration variation, refers to. Typical values are 0.8Ð0.9 pu.3.1.65 voltage change: A variation of the rms or peak value of a voltage between two consecutive levels sustained for definite but unspecified durations.d3.1.66 voltage dip:See: sag.IEEE MONITORING ELECTRIC POWER QUALITY Std 1159-1995 3.1.67 voltage distortion: Any deviation from the nominal sine wave form of the ac line voltage.3.1.68 voltage ßuctuation: A series of voltage changes or a cyclical variation of the voltage envelope.d3.1.69 voltage imbalance (unbalance), polyphase systems: The maximum deviation among the three phases from the average three-phase voltage divided by the average three-phase voltage. The ratio of the neg-ative or zero sequence component to the positive sequence component, usually expressed as a percentage.a3.1.70 voltage interruption: Disappearance of the supply voltage on one or more phases. Usually qualified by an additional term indicating the duration of the interruption (e.g., momentary, temporary, or sustained).3.1.71 voltage regulation: The degree of control or stability of the rms voltage at the load. Often specified in relation to other parameters, such as input-voltage changes, load changes, or temperature changes.c3.1.72 voltage variation, long duration: A variation of the rms value of the voltage from nominal voltage for a time greater than 1 min. Usually further described using a modifier indicating the magnitude of a volt-age variation (e.g., undervoltage, overvoltage, or voltage interruption).3.1.73 voltage variation, short duration: A variation of the rms value of the voltage from nominal voltage for a time greater than 0.5 cycles of the power frequency but less than or equal to 1 minute. Usually further described using a modifier indicating the magnitude of a voltage variation (e.g. sag, swell, or interruption) and possibly a modifier indicating the duration of the variation (e.g., instantaneous, momentary, or temporary).3.1.74 waveform distortion: A steady-state deviation from an ideal sine wave of power frequency princi-pally characterized by the spectral content of the deviation [B13].3.2 Avoided termsThe following terms have a varied history of usage, and some may have speciÞc deÞnitions for other appli-cations. It is an objective of this recommended practice that the following ambiguous words not be used in relation to the measurement of power quality phenomena:blackout frequency shiftblink glitchbrownout (see 4.4.3.2)interruption (when not further qualiÞed)bump outage (see 4.4.3.3)clean ground power surgeclean power raw powercomputer grade ground raw utility powercounterpoise ground shared grounddedicated ground spikedirty ground subcycle outagesdirty power surge (see 4.4.1)wink。
仿生减阻原理英文
仿生减阻原理英文Biomimetic drag reduction is a principle that draws inspiration from nature to design and create structures that minimize resistance to fluid flow. 仿生减阻原理是一个从自然界中汲取灵感,设计并创建最小化流体阻力的结构的原则。
This principle is based on the observation of various organisms and their ability to move efficiently through air or water. 这个原理基于对各种生物及其在空气或水中高效移动的能力的观察。
By studying the streamlined shapes of fish, birds, and other animals, engineers and designers have been able to develop technologies that reduce drag in a variety of applications. 通过研究鱼、鸟类和其他动物的流线型形状,工程师和设计师已经能够开发出在各种应用中减少阻力的技术。
This has important implications for industries such as aerospace, marine, and automotive, where reducing drag can lead to improved fuel efficiency and performance. 这对航空航天、海洋和汽车等行业具有重要意义,减少阻力可以提高燃油效率和性能。
One of the key ways in which biomimetic drag reduction is achieved is through the use of surface textures inspired by natural structures. 仿生减阻的一个关键方法是利用受到自然结构启发的表面纹理。
英文翻译
Design Of Low Noise Amplifier At 4 Ghz Abstract.The implementation of LNA at front end of receiver system is one of the challenging aspects in emergingUWB radio frequency (RF) systems.In first stage of each microwave receiver there is Low Noise Amplifier (LNA) circuit, and this stage has important rule in quality factor of the receiver. The design of a LNA in Radio Frequency (RF) circuit requires the trade-off many importance characteristics such as gain, Noise Figure (NF), stability, power consumption and complexity. This situation forces designers to make choices in the design of RF circuits. In this paper the aim is to design and simulate a single stage LNA circuit with high gain and low noise using GaAs FET for frequency of 4 GHz.The design simulation process is done using ANSOFT designer. A single stage LNA has successfully been designed with 8.53 dB forward gain and 1.26 dB noise figure at frequency of 4GHz.Keywords. LNA, S-Band, Ansoft, GaAs FET1. IntroductionThe increasing demand for portable wireless equipments, such as cell phones, GPS, Bluetooth(2.4GHz)has spurred great improvement in low-power RF circuits with high reliability. The low noise amplifier (LNA), which is the first block in the RF receiver front end , plays a significant role in amplifying weak signals reaching the antenna while at the same time reduces noise and maintains a low power consumption. Thus, when designing a LNA that meets specific performance requirements, one should take into consideration the gain, power, noise figure, input and output impedance match ,and linearity of the LNA.The inductive source degenerated cascode LNA topology, has demonstrated the potential for excellent impedance matching, noise figure, and power dissipation when compared to LNA that has resistive termination, 1/gm termination, or shunt-series feedback of the input port.In section 2, we study several basic parameters of the LNA with inductive source degeneration; in section 3, we offer an example of the design of a LNA; in section 4, we use ADS and PSPICE to analyze the performance of the designed LNA.The implementation of LNA at front end of receiver system is one of the challenging aspects in emerging UWB radio frequency(RF) systems.FederalCommunication Commission (FCC) has licensing on the use of UWB frequency (ranging from 3.1 GHz to 10.6 GHz) due to its benefits that are transmits information using very low power, short impulses thinly spreading over a wide bandwidth, high data rate and less multipathfading [1]. The design of broadband amplifiers introduces new difficulties which require careful considerations. Basically, the design of amplifier over a broad frequency range is matter of properlydesigning the maximum conjugate matched circuit, balance amplifier and feedback amplifier in order tocompensate for variations of frequencyThe techniques that mentioned above, had been employed for the broadband systems as it is being firmly establish, reliable and robust devices that can be realized in Monolithic Microwave Integrated Circuit (MMIC) and UWB technologies. In this work, this method of broadband amplifier had been choose and design using Microwave Office due to the excellent bandwidth performance, low noise figure and also this devices become very popular. This is because the input and output capacitances of the active devices are absorbed in the distributed structures. As a result, the amplifier can exhibits very low sensitivities in process variations when designing and simulate.At the first stage of the receiver, LNAs are required to have high gain and low NF. But designing of the only single stage amplifier, the high gain, low noise figure and the stability of the amplifier cannot be achieved as we needed. As for the different biasing circuit, active biasing does not offer much advantage over the passive biasing circuit.The only improvement recorded is the noise figure performance of the LNA with active biasing circuit. The matching networks can be changed to lump elements for space reduction and cost saving. LNA usually implies RF or wireless applications. But noise is also a critical consideration forAmplification is one of the most basic and prevalent microwave circuit functions in modern RF and microwave systems. Microwave transistor amplifiers are rugged, low cost, reliable and can easily be integrated in both hybrid and monolithic integrated circuitry. Transistor amplifiers can be used at frequencies in excess of 100GHz in a wide range of applications requiring small size, low noise figure, broad bandwidth and low to medium power capacity. The design techniques used for BJTand FET amplifiers employ the full range of concepts developed in the study of microwave transmission lines, two-port networks and Smith chart presentation. Our discussion of transistor amplifier design will rely on the terminal characteristics of transistors as represented by S-parameters.To amplify the received signal in a microwave system, a low noise amplifier (LNA) is required. Because any noise injected by components in a system is amplified by later gain stages along with the signal, it is essential that the signal be amplified early in the receiver chain while adding as little noise as possible. The goal of this is to design an LNA with lowest noise figure possible, with gain as high as possible for the given FET and information.The operating frequency of the design is 4 GHz. Substrate used is Duroid 5880 with εr = 2.20, 0.020 inch, 0.5 oz copper. The design utilizes one high-performance low noise GaAs FET transistor. The design is simulated and optimized in ANSOFT.1.1. Single Stage AmplifierA single stage microwave transistor amplifier can be modeled by the circuit in Fig. 1, where a matching network is used both sides of the transistor to transform the input and output impedance ZO to the source and load impedance ZS and ZL. The most useful gain definition for amplifier design is the transducer power gain, which accounts both source and load mismatch. Thus, we can be define separate effective gain factors for the input (Source) matching network, the transistor itself and the output (load) matching network as follows:Then the overall transducer gain isThe effective gains from GS and GL are due to the impedance matching of the transistor to the impedance ZO .1.2. Stability ConsiderationThe stability of an amplifier, or its resistance to oscillate, is a very important consideration in a design and can be determined from the S parameters, the matching networks, and the terminations. The stability condition of an amplifier circuit is frequency dependent. In the circuit Fig. 2, oscillations are possible when either the input or output port presents a negative resistance. This occurs when | Ґin |>1or |Ґout |>1. This is because and Ґout depends on the source and load matching networks. The stability of the amplifier depends on and as presented by the matching networks. Alternatively , it can be shown that the amplifier will be unconditionally stable if the Rollet’s necessary and sufficient conditions are met :12121122222211>∆+--=S S S S K (7)1.3. Noise Figure ConsiderationsBesides stability and gain,another important design consideration for a micrwave amplifier is its noisefigure.In receiver applications, it is often required to have a preamplifier with as low a noise figure aspossible,as the first stage of a receiver front end has the dominant effect on the noise performance of theoverall system. The noise figure parameter, N, is given byWhere, the quantities Fmin, Ґopt and RN are the characteristics of the transistor being used and are called the nose parameters of the device.1.4. Matching NetworkThe impedance matching network is loss less and is placed between the input source and the device.The need for matching network arises because amplifiers,in order to deliver maxiumum power to a losd, or to perform in a certain desired way mustbe properly terminated at both the input and the output ports. The impedance matching networks can be either designed mathematically or graphically with the aid of Smith Chart.Several types of matching networks are available,but the one used in this design is open single tubs whose length is found by matching done using smith chart manually.The input/output match is one of the most important processes in LNA design. In the followingsection, we will briefly introduce the input/output match in our design.As for the first stage, the least NF match should be used because lower NF is the goal. For the second and the third stages, as they have less effect on NF, the most gain match is used. The match can be calculated with the S-parameter, but the more simple and practical way is optimizing with Aglilent ADS. Wematched our LNA in this way as show in Fig.1 and Fig.2. When all three stages are properly matched, matchbetween stages should be considered. And after that, the LNA can be regarded as matched. One of theadvantages of using Agilent ADS is that one can conveniently determine if a LNA is stable or not. In ADS, the stability can be determined by using two parameters as stabFact and StabMeas(For the details of these two parameters, one can refer to ADSHELP).。
阻性和抗性消声器的设计流程
阻性和抗性消声器的设计流程英文回答:Design Procedure for Resistive and Reactive Silencers.1. Determine the sound source characteristics.Frequency spectrum of the sound source.Sound pressure level (SPL) at the source.Directivity of the sound source.2. Select the type of silencer.Resistive silencers: dissipate sound energy by creating friction in the flow. Examples include perforated metal silencers, fiber-filled silencers, and porous metal silencers.Reactive silencers: reflect sound waves back towards the source, causing destructive interference. Examples include expansion chambers, Helmholtz resonators, and quarter-wave resonators.3. Design the silencer.For resistive silencers, determine the pressure drop, flow resistance, and sound absorption coefficient.For reactive silencers, determine the resonance frequency, quality factor, and sound attenuation.4. Optimize the silencer design.Use computational fluid dynamics (CFD) or acoustic modeling software to simulate the silencer performance.Adjust the silencer dimensions, materials, and configuration to achieve the desired sound attenuation.5. Test the silencer.Conduct sound attenuation tests in an anechoic chamber or in situ.Compare the measured sound attenuation with the design specifications.中文回答:阻性和抗性消声器的设计流程。
联想ThinkCentre M90a GEN 2桌面电脑说明书
Introducing the ThinkCentre M90a Gen 2. A Desktop You Define.
The ThinkCentre M90a Gen 2 is the culmination of 27 years of innovation: a smarter, sleeker, and more secure desktop designed on the built for business Intel vPro® platform that anticipates the needs of the modern workforce to power a smarter future.
PHYSICAL BUTTON LED Power Mic. Mute LED: Camera ODD LAN HDD
Reliability
10 MIL-SPECS Yes
Accessories
LENOVO PROFESSIONAL WIRELESS KEYBOARD
PN: 4X30H567XX
EOU Stand / Rear cover
SPEAKER 3Wx2 with Dolby Atmos®
WEB CAMERA/MIC 5M RGB & 5M RGBIR with dual mic Mic support noise canceling feature
Security
Privacy Guard (optional, without touch) Smart Security Software (Optional) Intel® Hardware Shield BIOS Self Healing TPM 2.0 Kensington™ slot Intrusion Switch (optional) ThinkShutter Windows Hello Smart USB Protection
电子与通信工程专业英语Unit 3
Unit 3 The Transistor and It’s Basic Circuit
电子与通信工程专业英语
In the common-emitter connection,the signal is introduced into the base-emitter circuit and extracted from the collectoremitter circuit.This configuration has more moderate input and output impedance than the common-base circuit. The input (base-emitter) impedance is in the range of 20 to 5000 ohms, and output (collector-emitter) impedance is about 50 to 50000 ohms. Power gain in the order of 10,000 (or about 40dB) can be realized with this circuit because it provides both current gain and voltage gain.
Translation Reading More Translating skills Text
The Transistor and It’s Basic Circuit
Unit 3 The Transistor and It’s Basic Circuit
电子与通信工程专业英语
The Transistor and It’s Basic Circuit
在共发射极连接中信号从基一射回路输人从集一射回路输出与共基极连接相比这种结构有中等的输入和输出阻抗输入电阻约为20到5000欧姆输出电阻约为50到50000欧姆
电子信息工程专业英语(第三版)词汇表
Aa portion of一部分a variety of各种各样的a mass of 大量的AC abbr. Alternating Current交流电accidental adj.意外的accumulator n.累加器acquisition n.获取,采集acquisition time采集时间acquisition time采集时间activate vt.激活active adj.有源的actuator n 致动器,执行器add-on n.附件administration邮电管理局address vt.从事,忙于address generator地址产生器address pointer地址指针addressing mode寻址模式adjustment n 调整,调节ADSL abbr. Asymmetrical Digital Subscriber Loop非对称数字用户线adverse adj 不利的,相反的AFG Arbitrary Function Generator任意函数发生器aggregate v.聚集,合计AGP Accelerated Graphic Port 加速图形接口akin adj.同族的,类似的algorithm n.算法aliasing n.混叠现象alkaline adj.碱性的all in all 总而言之all of a sudden突然allocate vt.分配allocate vt.分配allow for 虑及,体谅allow for虑及,酌留alphanumeric adj.包括文字与数字的alter v.改变alternative n.选择ALU abbr Arithmetic Logic Unit算术逻辑单元aluminium n.铝ambient adj.周围的n.周围环境analogous adj.类似的analogy n.类似,类推ancillary adj.辅助的,副的anguish n 痛苦,苦恼angular frequency角频率annotation n.标注,注解antenna n.触角,天线anti-aliasing filter抗亍昆叠滤波器anti-aliasing filter抗混叠滤波器appliance n.用具,器具appliance n.用具,器县application interface 应用程序接口approach n. 方法appropriate adj.适当的approximation n.近似(值)approximation n.逼近,近似值archive vt.存档n.档案文件arena n.竞技场,舞台arena n.竞技场舞台arise from 由...引起;从...中产生arithmetic n 算数array n.阵列,数组array n.数组,阵列artificial adj.不自然的as a consequence 因此as always照常as opposed to .. 与...相反as yet到目前为止ASIC abbr. Application Specific Integrated Circuit专用集成电路ASIC Application Specific Integrated Circuit ASIC Application-Specific Integrated Circuit专用集成电路assembler n 汇编器assembly language汇编语言assignment n.赋值ASSP abbr. Application Specific Standard Product专用标准器件ASSP Application-Specific Standard Parts 专用标准器件assume vt 假定asynchronous adj.异步的asynchronous adj.异步的attenuator n.衰减器audiophile n.高保真音响爱好者auditorium n.会堂,礼堂auditory system听觉系统automatic variable自动变量automotive adj.汽车的AWG Arbitrary Waveform Generator任意波形发生器B(be) known as…称作……(be) capable of…具备……的能力(be) equivalerit to相当于……,等价于……(be) proportional to与……成比例back bias 反向偏压backplane n.背叛backside n.背部,后方backward compatible向下兼容bar graph条形图bargain n.交易,协议,廉价品barrier n.隔板,势垒,阻挡层base station 基站base station基站baseband n.基带baud n 波特be concerned with…对……关心be encumbered with为……所累be mad e up of由……组成be referred to as.... 被称作...be thought of as…被认为……beam splitter 分光镜behavioral synthesis 行为综合beneficial adj.有益的,受益的Bessel filter贝塞耳滤波器biased adj.加偏压的,有偏向的bill of materials材料单BIOS abbr.Basic Input Output System基本输入输出系统bipolar adj.双极性的bit vector位向量bland adj.平淡的block diagram方框图blow up 爆炸,放大blur v 使……模糊BNC bayonet neill-concelman 同轴电缆卡环形接头boast v.夸耀Bode plot伯德图bond n. 接头Boolean variable 布尔变量boost n.升压,放大boot n.启动,引导,自举boot sector引导扇区bootstrap n. 引导程序bootstrap loader 引导装入程序brake n.刹车branch instruction分支指令brief adj.短暂的bring up 捉出,引出browse v.浏览budget n.预算budget n.预算budgetary adj.预算的buffer n 缓冲器buffer n.缓冲器,缓冲区building block 构件,模块built-in adj.内置的bulky adj.体积大的bulky adj 容量大的,体积大的bunching n.聚束bus interface总线接口bus interface总线接口by one’s (own)bootstraps 通过自己的努力by way of 经由;作为Ccable n.电缆cable modem 线缆调制解调器cable TV 有线电视cache n.高速缓存CAD Computer Aided Design 计算机辅助设计calculable adj.可计算的,能预测的calculation-intensive algorithm运算密集型算法camcorder n.便携式摄像机candid adj.非排演的,偷拍的capacitive adj.电容性的capacitor n.电容器capacity n.容量,电容capture v .记录,输入carrier wave 载波cascade n 级联cathode n.阴极cauldron n.大锅炉CB citizens'band 民用波段CCD Charge Coupled Device 电荷耦合器件CD Compact Disc 光盘cell n.细胞,蜂房,电池cellular adj.蜂窝状的characterization n.描述,表征charge pump电荷泵chat n.聊天Chebyshev Type l filter切比雪夫1型滤波器chip rate码片速率chrominance n.色度circular adj.圆形的,循环的circular adj.循环的,环形的circular buffer循环缓冲区class n.类clear-cut adj.界限分明的clever adj.精巧的,灵巧的,巧妙的clichén 空话,套话,废话clock jitter 时钟抖动clump n.块,团CMOS abbr. Complementary Metal-Oxide-Semiconductor互补金属氧化物半导体coding theory 编码理论coexist vi.共存cold boot 冷启动collide vi.碰撞,抵触collision n.碰撞,冲突combat v.反对防止come down to归结为,涉及commute v 通勤comparable adj.可比较的,比得上的comparator n.比较器comparator n 比彰芝器compatibility n.兼容性compelling adj.强制的compiler n.编译器complex plane复平面complex-frequency variable复频率变量complicate vt使复杂,使难做,使恶化comply vi.遵守comply with同意,遵守component n 组件computing n.计算,处理concerned adj.有关的concisely adv.简明地concurrent adj.并发的concurrent process并发进程conditional adj.条件的conditioning n 调节,调整conduct v传导conductivity n. 传导性,传导率configure vt.配置,设定conflict n.冲突,抵触conformance n.顺应,一致conjugate adj.共轭的consequently adv.从而,因此consist of...由……组成consolidated adj。
集成电路设计专业名词解释汇总英文版
集成电路设计专业名词解释汇总英文版English:"Integrated Circuit (IC) Design: The process of creating a blueprint for the manufacturing of integrated circuits, such as microchips, using specialized software and tools. IC design involves several stages, including architectural design, logic design, circuit design, physical design, and verification. Architectural design establishes the high-level functionality and organization of the circuit, determining the overall structure and major components. Logic design involves the translation of the architectural design into a set of logic equations and functional blocks, specifying the logical operation of the circuit. Circuit design focuses on the actual implementation of the logic design, defining the electrical connections and components needed to achieve the desired functionality. Physical design, also known as layout design, involves the placement and routing of the components to ensure proper functioning and optimal performance, considering factors such as power consumption, signal integrity, and manufacturing constraints. Verification is the process of ensuring that the designed circuit meets the specified requirements and functions correctly under various conditions. Field-ProgrammableGate Array (FPGA): An integrated circuit that can be configured by the user after manufacturing. FPGAs contain an array of programmable logic blocks and interconnects, allowing for the implementation of various digital circuits. Hardware Description Language (HDL): A specialized programming language used to describe the behavior and structure of electronic circuits, facilitating the design and simulation of digital systems. Common HDLs include Verilog and VHDL. Electronic Design Automation (EDA) Tools: Software tools used in the design of electronic systems, including integrated circuits. EDA tools automate various stages of the design process, from schematic capture and simulation to layout and verification. Some popular EDA tools include Cadence Virtuoso, Synopsys Design Compiler, and Mentor Graphics Calibre. Very-Large-Scale Integration (VLSI): The process of integrating thousands or millions of transistors into a single chip. VLSI technology enables the creation of complex, high-performance integrated circuits, such as microprocessors and memory chips, by packing a large number of transistors into a small area. Application-Specific Integrated Circuit (ASIC): An integrated circuit customized for a particular application or purpose. Unlike FPGAs, ASICs are manufactured to perform a specific function, offering advantages in terms of performance,power consumption, and cost for mass production. ASIC design involves the development of custom circuitry optimized for a particular application, often using standard cell libraries and specialized design methodologies."中文翻译:"集成电路(IC)设计:是指利用专业软件和工具创建集成电路(如微芯片)制造的蓝图的过程。
应用光伏学题库
一、选择题(在下列每题的四个选项中,只有一个选项是符合试题要求的。
请把答案填入答题框中相应的题号下。
每小题1分,共10分)二、填空题(本大题共10小题,每小题1分,共10分)§01. ★Photovoltaics (often abbreviated as PV ) is a simple and elegant method of harnessing the sun's energy .2. ★PV devices (solar cells) are unique in that they directly convert the incident solar radiation into electricity , with no noise, pollution or moving parts, making them robust, reliable and long lasting.3. ★Photovoltaics is the process of converting sunlight directly into electricity using solar cells .4. ★The first photovoltaic device was demonstrated in 1839 by Edmond Becquerel, as a young 19 year old working in his father‘s laboratory in Fra nce.5. ★The first practical photovoltaic device was demonstrated in the 1950s.6. ★★Research and development of photovoltaics received its first major boost from the space industry in the 1960s.§11. ★A photon is characterized by either a wavelength, denoted by λ, or equivalently an energy, denoted by E.2. ★★There is an inverse relationship between the energy of a photon (E ) and the wavelength of the light (λ) given by the equation: ,.3. ★★The photon flux is defined as the number of photons per second per unit area.4. ★★★The total power density emitted from a light source can be calculated by integrating the spectral irradiance over all wavelengths or energies of interest.5. ★★In the analysis of solar cells, the photon flux is often needed as well as the spectral irradiance.6. ★The blackbody sources which are of interest to photovoltaics, emit light in the visible region.7. ★★★The spectral irradiance from a blackbody is given by Plank's radiation law.8. ★★The peak wavelength of the spectral irradiance is determined by differentiating the spectral irradiance and solving the derivative when it equals 0. The result is known as Wien‗s Law: ()2900p m T λμ=.9. ★★★Solar radiation in space: sun H D R H ⨯=220.H sun =5.961×107W/m 2.10. ★The solar radiation outside the earth's atmosphere have been defined as a standard value called air masszero (AM0) and takes a value of 1.353 kW/m 2.11. ★The spectral irradiance from a blackbody at 6000 K (at the same apparent diameter as the sun when viewedfrom earth); from the sun‘s photosphere as observed just outside earth‘s atmosphere (AM0); and from the sun‘s photosphere after having passed through 1.5 times the thickness of earth‘s atmosphere (AM1.5G).12. ★★The Air Mass is defined as: ()θcos 1AM =,2h s 1AM ⎪⎭⎫ ⎝⎛+=. where θ is the angle from the vertical (zenithangle).13. ★★When the sun is directly overhead, the Air Mass is 1.14. ★The standard spectrum at the Earth's surface is called AM1.5G (the G stands for global and includes bothdirect and diffuse radiation) or AM1.5D (which includes direct radiation only), these calculations give approximately 970 W/m 2 for AM1.5G 。
英语作文-提升集成电路设计质量的关键要素与策略
英语作文-提升集成电路设计质量的关键要素与策略In the realm of integrated circuit (IC) design, quality is paramount. The intricate dance of electrons through the silicon pathways determines the efficiency, reliability, and overall performance of electronic devices. As technology advances, the demand for smaller, faster, and more efficient circuits grows. To meet these demands, several key factors and strategies must be employed to enhance the quality of IC design.Precision in Fabrication: The foundation of high-quality IC design lies in the precision of fabrication. As circuits become more complex, the margin for error diminishes. Advanced lithography techniques, such as extreme ultraviolet (EUV) lithography, are essential for creating the fine patterns required for next-generation chips.Robust Design Methodologies: Employing robust design methodologies is crucial. This includes the use of Electronic Design Automation (EDA) tools that enable designers to simulate and verify their circuits before fabrication. By predicting how circuits will behave under various conditions, designers can preemptively address potential issues.Material Innovation: The materials used in ICs have a significant impact on their performance. The introduction of new materials like gallium arsenide or graphene can offer superior electrical properties, such as higher electron mobility, which translates to faster and more efficient circuits.Thermal Management: As ICs operate at higher speeds, they generate more heat. Effective thermal management strategies, such as heat sinks, cooling systems, or even new materials with higher thermal conductivity, are essential to maintain performance and prevent failure.Testing and Quality Assurance: Rigorous testing and quality assurance are the final guards against defects. This includes both pre-fabrication testing of the design and post-fabrication testing of the physical chips. Ensuring that every chip meets the stringent quality standards is vital for the reliability of the end product.Supply Chain Collaboration: Collaboration across the supply chain can lead to improvements in IC quality. Working closely with material suppliers, equipment manufacturers, and foundries can help in fine-tuning the production process and addressing quality issues more effectively.Continuous Learning and Adaptation: The field of IC design is ever-evolving. Continuous learning and adaptation to new technologies, processes, and market demands are necessary for maintaining high quality in IC design.By focusing on these key elements and implementing strategic measures, the quality of integrated circuit design can be significantly improved, paving the way for the next generation of electronic innovation. The synergy of precision, innovation, and rigorous testing forms the cornerstone of excellence in IC design, ensuring that the electronic devices of tomorrow not only meet but exceed the expectations of a rapidly advancing digital world. 。
FLUXUS F808 809 流量计说明书
Technical SpecificationFLUXUS® F808/809Transmitter FLUXUS F808Transmitter FLUXUS F809Measurement with transducers mounted by Variofix CMeasurement with transducers mounted by PermaFiXUltrasonic Flowmeters for Liquids for Permanent Installation in Hazardous AreasEspecially designed for the stationary use in explosive atmosphereFeatures•F808: instrument with one measuring channel for exact and reliable flow measurement•F809: Instrument with two measuring channels for exact and reliable flow measurement under complex flow conditions •Precise bi-directional and highly dynamic flow measurement with the non-intrusive clamp-on technology•High precision at fast and slow flow rates, high temperature and zero point stability •Transmitter housing:- Corrosionproof and suitable for offshore application-Transmitter F80x**-A1 in a flameproof housing (degree of protection IP66)-Transmitter F80x**-F1 in an explosionproof housing (NEMA 4X)•Certifications:-F80x**-A1: ATEX/IECEx -F80x**-F1: FM Cl. 1, Div. 1-F808**-F2: FM Cl. 1, Div. 2•The transmitters can be operated by a magnet pen without opening the housing•Automatic loading of calibration data and transducer detection for a fast and easy set-up (less than 5 min), providing precise and long-term stable results •User-friendly design•Communication interfaces Modbus RTU and HART available •Transducers available for a wide range of inner pipe diame-ters () and fluid temperatures ()•Flow measurement independent of pipe wall thickness and medium pressure• approved transducers for hazardous areas available•HybridTrek automatically switches between transit time and NoiseTrek mode of measurement when high particulate flows are encountered•Measurement is unaffected by medium density, viscosity and solid content (max. 10 % of volume)•Product variant FLUXUS XLF is especially suited for precise and reliable flow measurement applications with very low flow velocities (e.g. chemical injection in oil and gas extraction)ApplicationsDesigned for industrial use in harsh environments, especially for oil extraction and processing in the petrochemical and chemical industry.•Chemical industry•Petrochemical industry•Oil extraction and exploration •Refineries6...6500 mm -170...+600 °C ATEX/IECEx, FM Class 1 Div. 1/Div.2FLUXUS® F808/809Technical Specification Table of Contents Function (3)Measurement Principle (3)Calculation of Volumetric Flow Rate (3)Number of Sound Paths (4)Typical Measurement Setup (4)Flow Transmitter (5)Technical Data (5)Dimensions (8)Wall and 2 " Pipe Mounting Kit (10)Terminal Assignment (11)Transducers (13)Transducer Selection (13)Transducer Order Code (14)Technical Data (15)Transducer Mounting Fixture (25)Coupling Materials for Transducers (28)Connection Systems (29)Transducer Cable (30)Junction Box (F80***-A1) (31)Technical Data (31)Dimensions (31)2 " Pipe Mounting Kit (optional) (32)Terminal Assignment (32)Extension Cable (F80***-F1) (33)Terminal Assignment for Terminal Board KFM1 (33)Technical Specification FLUXUS® F808/809FunctionMeasurement PrincipleTransit Time Difference PrincipleIn order to measure the flow of a medium in a pipe, ultrasonic signals are used, employing the transit time dif-ference principle. Ultrasonic signals are emitted by a transducer installed on the pipe and received by a sec-ond transducer. These signals are emitted alternately in the flow direction and against it.As the medium in which the signals propagate is flowing, the transit time of the ultrasonic signals in the flow direction is shorter than against the flow direction.The transit time difference, ∆t, is measured and allows the flowmeter to determine the average flow velocity along the propagation path of the ultrasonic signals. A flow profile correction is then performed in order to ob-tain the area averaged flow velocity, which is proportional to the volumetric flow rate.Two integrated microprocessors control the entire measuring process. This allows the flowmeter to remove disturbance signals, and to check each received ultrasonic wave for its validity which reduces noise.HybridTrekIf the gaseous or solid content in the medium increases occasionally during measurement, a measurement with the transit time difference principle is no longer possible. NoiseTrek mode will then be selected by the flowmeter. This measurement method allows the flowmeter to achieve a stable measurement even with high gaseous or solid content.The transmitter can switch automatically between transit time and NoiseTrek mode without any changes to the measurement setup.Calculation of Volumetric Flow Rate= k Re . A . k a . ∆t/(2 . t fl )wherePath of the ultrasonic signal Transit time difference ∆t-volumetric flow ratek Re -fluid mechanics calibration factor A -cross-sectional pipe area k a -acoustical calibration factor ∆t -transit time difference t fl-transit time in the mediumV ·V ·FLUXUS® F808/809Technical SpecificationNumber of Sound PathsThe number of sound paths is the number of transits of the ultrasonic signal through the medium in the pipe. Depending on the number of sound paths, the following methods of installation exist:•reflection arrangementThe number of sound paths is even. Both of the transducers are mounted on the same side of the pipe. Correct positioning of the transducers is easier.•diagonal arrangementThe number of sound paths is odd. Both of the transducers are mounted on opposite sides of the pipe. In the case of a high signal attenuation by the medium, pipe and coatings, diagonal arrangement with 1 sound path will be used.The preferred method of installation depends on the application. While increasing the number of sound paths increases the accuracy of the measurement, signal attenuation increases as well. The optimum number of sound paths for the parameters of the application will be determined automatically by the transmitter.As the transducers can be mounted with the transducer mounting fixture in reflection arrangement or diagonal arrangement, the number of sound paths can be adjusted optimally for the application.Typical Measurement Setup a - transducer distancenegative transducer distance Example of a measurement setup in reflection arrangementTechnical Specification FLUXUS® F808/809Flow TransmitterTechnical DataFLUXUS F809**-A1F809**-A1AF809**-F1F808**-A1F808**-F1F808**-F2design explosion proof field device, 1 or 2 mea-suring channelsexplosion proof field device, 1 measuring channel transducersC****81, C****LI1, C***2E85C**1N62C****81, C****LI1, C***2E85C**1N62C****53measurementmeasurement principle transit time difference correlation principle,automatic NoiseTrek selection for measurements with high gaseous or solid content flow velocity 0.01...25 m/srepeatability 0.15 % of reading ±0.01 m/smediumall acoustically conductive liquids with < 10 % gaseous or solid content in volume (transit time difference principle)temperature compensation corresponding to the recommendations in ANSI/ASME MFC-5.1-2011accuracy 1with standard calibration with advanced calibration (optional)with field calibration 2±0.5 % of reading ±0.01 m/s flow transmitter power supply100...240 V /50...60 Hz or20...32 V DC power consumption< 8 Wnumber of flow measuring channels 1, optional: 21damping 0...100 s, adjustable measuring cycle (1 channel)100...1000 Hz response time 1 s, option: 70 ms housing material cast aluminum, special offshore coating degree of protection accord-ing to IEC/EN 60529IP66dimensions see dimensional drawing weight 6.1 kg 5.3 kg fixation wall mounting, 2 " pipe mounting operating temperature -30...+60 °C (< -20 °C without operation of the display)display 2 x 16 characters, dot matrix, backlight menu language English, German, French, Dutch, Spanish 1for transit time difference principle, reference conditions and v > 0.15 m/s2reference uncertainty < 0.2 %±1.6 % of reading ±0.01 m/s ±1.2 % of reading ±0.01 m/sFLUXUS® F808/809Technical SpecificationTechnical Specification FLUXUS® F808/809serial data kit (optional)software (all Windows™ versions)-FluxData: download of measurement data, graphical presentation,conversion to other formats (e.g. for Excel™)-FluxDiag (optional): online diagnostics and report generation -FluxKoef: creating medium data sets-FluxSubstanceLoader: upload of medium data sets сable RS2323adapter RS232 - USB 3outputs The outputs are galvanically isolated from the transmitter.numberF809**-A1current output: 2binary output: 2 or 4or current output: 0 or 1binary output: 1Modbus or current output: 2/HART binary output: 2or frequency output: 1binary output: 1F809**-A1A current output (intrinsic safety): 1/HARTcurrent output: 2binary output: 2 or 4or current output: 0 or 1binary output: 1Modbusor current output: 2/HART binary output: 2or frequency output: 1binary output: 1current output: 1binary output: 1or current output: 1Modbus or current output: 1/HART binary output: 1current outputcurrent output I1, I2-range 0/4...20 mA-accuracy 0.1 % of reading ±15 μA -active output R ext < 500 Ω-passive outputU ext = 4...26.4 V, depending on R ext , R ext < 1 k Ωcurrent output I1 in HART mode -range4...20 mA-passive output U ext = 7...30 V DC -active output U int = 24 Vcurrent output (intrinsic safety)current output I1-range 4...20 mA ---accuracy 0.04 % of reading ±3 μA---passive outputU ext = 7...30 V, depending on R ext , R ext < 1 k Ω--current output I1 in HART mode -range4...20 mA--passive output U ext = 7...30 V DC -frequency output range0...5 kHz -open collector24 V/4 mAoptional: 30 V/100 mA or8.2 V DIN EN 60947-5-6 (NAMUR)-binary output Reed relay 48 V/100 mA -open collector24 V/4 mAoptional: 30 V/100 mA or8.2 V DIN EN 60947-5-6 (NAMUR)24 V/4 mAoptional (only in combination with HART): 30 V/100 mA or 8.2 V DIN EN 60947-5-6 (NAMUR)binary output as alarm output -functions limit, change of flow direction or error binary output as pulse output -pulse value 0.01...1000 units -pulse width 80...1000 ms 3connection of the interface RS232 outside of explosive atmosphere (housing cover open)FLUXUSF809**-A1F809**-A1AF809**-F1F808**-A1F808**-F1F808**-F2FLUXUS® F808/809Technical Specification DimensionsTechnical Specification FLUXUS® F808/809FLUXUS® F808/809Technical Specification Wall and 2 " Pipe Mounting KitTerminal Assignmentpower supplytransducersoutputs (Options)FLUXUS F808ACDCterminal strip terminal connection terminal connection KL2L phase L++N neutral L--PEearthPEearthmeasuring channel Aterminal strip terminal connection KL4ARS transducer , internal shieldAR transducer , signal AV transducer , signal AVS transducer , internal shieldcable gland or equipotential bonding terminal (transducers)external shield terminal strip terminalconnection KL1 4 GND 6 (+) 5 (-)binary output B1KL33 GND 2 (+) 1 (-)active current output I1terminal strip terminalconnection KL1 4 GND 6 (+) 5 (-)binary output B1KL33 GND 1 (-) 2 (+)passive current output I1terminal strip terminal connection KL1 1 (S) 2 (A+) 3 (B-)ModbusKL33 GND 2 (+) 1 (-)active current output I1terminal strip terminal connection KL1 1 (S) 2 (A+) 3 (B-)ModbusKL33 GND 1 (-)2 (+)passive current output I1power supplyoutputspower supplytransducersoutputsFLUXUS F809ACDCterminal connection terminal connection L phase L++N neutral L--PEearthPEearthmeasuring channel Ameasuring channel Bterminal connection terminal connection AV transducer , signal BV transducer , signal AVS transducer , internal shield BVS transducer , internal shield ARS transducer , internal shield BRS transducer , internal shield AR transducer , signal BR transducer , signal cable gland or equipo-tential bonding termi-nal (transducers)external shield cable gland or equipo-tential bonding termi-nal (transducers)external shield terminal connection 1(-), 2(+)current output I1frequency output F13(-), 4(+)current output I25(-), 6(+)binary output B1 (open collector)7(-), 8(+)binary output B2 (open collector)9(-), 10(+)binary output B3 (open collector or Reed relay)binary output B1 (open collector)11(-), 12(+)binary output B4 (open collector or Reed relay)A+, B-, SRS485lower housing,front viewupper housing,back viewTransducersTransducer Selectiontransducer order codeFSG4005006500FSK10020036006500FSM5010020003400FSP2550200600FSQ1025150400FSS610705105010050010005000inner pipe diameter [mm] recommended possibleTransducer Order Code1, 2345, 67, 89...1112, 13no. of character t r a n s d u c e rt r a n s d u c e r f r e q u e n c y-a m b i e n t t e m p e r a t u r ee x p l o s i o n p r o t e c t i o nc o n n e c t i o n s y s t e m-e x t e n s i o n c a b l e/o p t i o ndescriptionFSset of ultrasonic flow transducers for liquids measurement, shear wave G 0.2 MHzK0.5 MHzM 1 MHz P 2 MHz Q 4 MHz S 8 MHzN normal temperature rangeEextended temperature range (shear wave transducers with trans-ducer frequency M, P, Q)A1ATEX zone 1/IECEx zone 1F1FM Class I Div. 1F2FM Class I Div. 2TS direct connection or connection via junction box TIdirect connectionXXX0 m: without extension cable> 0 m: with extension cable, F80***-A1: with junction box, F80***-F1: with terminal board KFM1LC long transducer cable IP68degree of protection IP68OShousing with stainless steel 316example FSM-NA1TS-000shear wave transducer 1 MHz, normal temperature range, ATEXzone 1/IECEx zone 1, connection system TS (direct connection)--/Technical DataShear Wave Transducers (zone 1)Shear Wave Transducers (zone 1, IP68)Shear Wave Transducers (zone 1, extended temperature range)Shear Wave Transducers (FM Class I, Div. 1)Shear Wave Transducers (FM Class I, Div. 1)Shear Wave Transducers (FM Div. 2)Shear Wave Transducers (FM Div. 2)Shear Wave Transducers (FM Div. 2)Transducer Mounting FixtureOrder Code1, 234567 (9)10, 11no. of character t r a n s d u c e r m o u n t i n g f i x t u r et r a n s d u c e r-m e a s u r e m e n t a r r a n g e m e n ts i z e-f i x a t i o no u t e r p i p e d i a m e t e r/o p t i o ndescriptionVL Variofix LV СVariofix C PF PermaFiXWItransducer box for WaveInjectorK transducers with transducer frequency G, K M transducers with transducer frequency M, P, Q Q transducers with transducer frequency Q Stransducers with transducer frequency SD reflection arrangement or diagonal arrangement Rreflection arrangement S small M medium Llarge B boltsS tension straps W weldingNwithout fixation 00210...20 mm 00420...40 mm T3640...360 mm 01310...130 mm 036130...360 mm 092360...920 mm 200920...2000 mm 4502000...4500 mm 9404500...9400 mm SK10.5...2.5 in SK2 3...6 in SK38...10 in SK412...18 in SK520...36 in SK642...100 in SK7100...170 in SB2 3...6 in SB38...10 in SB412...18 in SB520...36 in SB630...100 in NDRanyIP68degree of protection IP68OS housing with stainless steel 316Zspecial designexample VL M -D S -S 200Variofix L and tension straps for transducers with transducer frequency M, PPFM-DS-S200PermaFiX and tension straps for transducers with transducer frequency M, P, Q--/Coupling Materials for TransducersTechnical Datanormal temperature range(4th character of transducer ordercode=N)extended temperature range(4th character of transducer ordercode=E)WaveInjector WI-400 < 100 °C< 170 °C< 150 °C< 200 °C< 280 °C280...400 °C< 24 h coupling com-pound type N orcoupling foiltype VT coupling com-pound type E orcoupling foiltype VTcoupling com-pound type E orcoupling foiltype VTcoupling com-pound type E or Hor coupling foiltype VTcoupling foiltype A andcoupling foiltype VTcoupling foiltype B andcoupling foiltype VTlong time measurement coupling foiltype VT1coupling foiltype VT2coupling foiltype VT1coupling foiltype VT2coupling foiltype A andcoupling foiltype VTcoupling foiltype B andcoupling foiltype VT1 < 5 years2 < 6 monthstype order code ambient temperature material remark°Ccoupling compoundtype N990739-1-30...+130mineral grease pastecoupling compoundtype E990739-2-30...+200silicone pastecoupling compoundtype H990739-3-30...+250fluoropolymer pastecoupling foil type A990739-7max. 280leadcoupling foil type B990739-8> 280...400silvercoupling foil type VT990739-61-10...+200fluoroelastomer for transducers with transducerfrequency F990739-0for transducers with transducerfrequency G, H, K990739-6for shear wave transducers withtransducer frequency M, P 990739-14for shear wave transducers IP68and Lambwave transducers withtransducer frequency M, P, Q 990739-5for transducers with transducerfrequency QConnection SystemsTransducer CableTechnical Datatransducer frequency (3d character of transducerorder code)F, G, H, K M, P Q S T S /T 1x lx lx l x l cable lengthm 5≤ 3004≤ 3003≤ 902≤ 40cable length (*****62)m 15≤ 30015≤ 30015≤ 90--cable length (option LC,*****62)m 46≤ 30046≤ 30046≤ 90--cable length (option IP68)m12≤ 30012≤ 300----x - transducer cable lengthl - max. length of extension cabletransducer cabletype16992550 (option IP68)61112549ambient temperature °C-55...+200-40...+100-100...+225-100...+200properties longitudinal water tight cable jacket materialPTFE PUR PFA PTFE outer diameter mm 2.9 5.2 ±0.2 2.7 5.3thickness mm0.30.90.50.5colour brown grey white black shield x xxxsheath materialstainless steel 304 (1.4301)-stainless steel 304 (1.4301)-option OS : 316L (1.4404)option OS : 316L (1.4404)outer diameter mm8-8-extension cabletype26155245transmitterF80***-F1F80***-A1F808**-F2ambient temperature °C-40...+70-30...+70propertieshalogen free fire propagation test according to IEC 60332-1combustion test according to IEC 60754-2halogen free fire propagation test according to IEC 60332-1combustion test according to IEC 60754-2cable jacket materialPUR PUR outer diameter mm 1212thickness mm22colour black black shield x xsheath material -steel wire braid with copolymer sheath outer diametermm -15.6Junction Box (F80***-A1)Technical DataDimensionsTSFLUXUS_F808_809V1-7EN_Leu, 2015-10-14312 " Pipe Mounting Kit (optional)Terminal Assignment32TSFLUXUS_F808_809V1-7EN_Leu, 2015-10-14Extension Cable (F80***-F1)The extension cable and the transducers are connected via terminal board KFM1. The terminal board has to be installed into a junction box (by customer) approved for hazardous areas.Terminal Assignment for Terminal Board KFM1TSFLUXUS_F808_809V1-7EN_Leu, 2015-10-1433FLEXIM GmbH Wolfener Str. 3612681 BerlinGermanyTel.: +49 (30) 93 66 76 60 Fax: +49 (30) 93 66 76 80internet: e-mail:***************Subject to change without notification. Errors excepted. FLUXUS® is a registered trademark of FLEXIM GmbH.34TSFLUXUS_F808_809V1-7EN_Leu, 2015-10-14。
电子科学与技术专业外语翻译
Figure 1-1】图1-1 给出了在三种材料中一些重要材料相关的电阻值(相应电导率ρ≡1/δ)。
However】然而锗不太适合在很多方面应用因为温度适当提高后锗器件会产生高的漏电流。
For a given】对于给定的半导体,存在代表整个晶格的晶胞,通过在晶体中重复晶胞组成晶格。
This structure】这种结构也属于金刚石结构并且视为两个互相贯穿的fcc亚点阵结构,这个结构具有一个可以从其它沿立方对角线距离的四分之一处移动的子晶格(位移/4)Most of】多数Ⅲ-Ⅴ半导体化合物具有闪锌矿结构,它与金刚石有相同结构除了一个有Ⅲ族Ga原子的fcc子晶格结构和有Ⅴ族As原子的另一个。
.For example】例如,孤立氢原子的能级可由玻尔模型得出:式中m0 代表自由电子质量, q是电荷量,ε0是真空中电导率, h 是普朗克常数,n 是正整数称为主量子数。
Further decrease】空间更多减少将导致能带从不连续能级失去其特性并合并起来,产生一个简单的带。
As shown】如图1-4(a)能带图所示,有一个大带隙。
注意到所有的价带都被电子充满而导带中能级是空的As a consequence】结果,半满带的最上层电子以及价带顶部电子在获得动能(外加电场)时可以运动到与其相应的较高能级上At room】在室温和标准大气压下,带隙值硅(1.12ev )砷化镓(1.42ev)在0 K带隙研究值硅(1.17ev )砷化镓(1.52ev)Thus】于是,导带的电子密度等于把N(E)F(E)dE从导带底Ec (为简化起见设为0)积分到导带顶EtopFigure 1-5】图1-5从左到右示意地表示了本征半导体的能带图, 态密度(N(E)~E1/2), 费米分布函数, 本征半导体的载流子浓度In an extrinsi c】在非本征半导体中,一种载流子类型增加将会通过复合减少其它类型的数目;因此,两种类型载流子的数量在一定温度下保持常数For shallow】对硅和砷化镓中的浅施主,在室温下,常常有足够的热能电离所有的施主杂质,给导带提供等量的电子We shal l】我们先讨论剩余载流子注入的概念。
Introductory Circuit Analysis ch07
Series-Parallel Networks
General approach
7.6 - Ammeter, Voltmeter, and Ohmmeter Design
Fundamental design of an ammeter, voltmeter, and ohmmeter.
d’Arsonval analog movement: an iron-core coil mounted on bearings between a permanent magnet. The helical springs limit the tuning motion of the coil and provide a path for the current to reach the coil. When current is passed through the movable coil, the fluxes of the coil and permanent magnet will interact to develop a torque on the coil that will cause it to rotate on its bearings The movement is adjusted to indicate zero deflection on a meter scale when the current through the coil is zero The direction of the current through the coil will determine whether the pointer will display an up-scale or below-zero indication
高性能锂离子电池用N掺杂C-Sn交联纳米纤维自支撑电极的理性设计(英文)
物 理 化 学 学 报Acta Phys. -Chim. Sin. 2024, 40 (3), 2305007 (1 of 11)Received: May 8, 2023; Revised: June 5, 2023; Accepted: June 20, 2023; Published online: June 28, 2023. *Correspondingauthors.Emails:***************(T.Y.);***************.cn(L.-F.C.)The project was supported by the National Natural Science Foundation of China (52374301, U1960107, 22075269, U2230101, GG2090007003), the Anhui Provincial Major Science and Technology Project (202203a05020048), the Fundamental Research Funds for the Central Universities (N2123001, WK2480000007), the Anhui Provincial Hundred Talents Program, the Hefei Innovative Program for Overseas Excellent Scholar (BJ2090007002), USTC Startup Program (KY2090000062, KY2090000098, KY2090000099), the Performance Subsidy Fund for Key Laboratory of Dielectric and Electrolyte Functional Material Hebei Province (22567627H).国家自然科学基金(52374301, U1960107, 22075269, U2230101, GG2090007003), 安徽省科技重大专项(202203a05020048), 中央高校基本业务费(N2123001, WK2480000007), 安徽省百人计划(青年)项目, 合肥市留学人员创新项目(BJ2090007002), 中国科学技术大学启动基金(KY2090000062, KY2090000098, KY2090000099), 河北省电介质与电解质功能材料重点实验室绩效补助经费(22567627H)资助© Editorial office of Acta Physico-Chimica Sinica[Article] doi: 10.3866/PKU.WHXB202305007 Rational Design of Cross-Linked N-Doped C-Sn Nanofibers as Free-Standing Electrodes towards High-Performance Li-Ion Battery AnodesYing Li 1, Yushen Zhao 1,2, Kai Chen 3, Xu Liu 1,2, Tingfeng Yi 1,2,*, Li-Feng Chen 3,*1 School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China.2 Key Laboratory of Dielectric and Electrolyte Functional Material Hebei Province, School of Resources and Materials, NortheasternUniversity at Qinhuangdao, Qinhuangdao 066004, Hebei Province, China.3 CAS Key Laboratory of Mechanical Behavior and Design of Materials (LMBD), Department of Thermal Science and EnergyEngineering, School of Engineering Science, University of Science and Technology of China, Hefei 230026, China.Abstract: Li-ion batteries (LIBs) have been considered as one of the most promising power sources for electric vehicles, portable electronics and electrical equipment because of their long cycle life and high energy density. The free-standing electrodes without binder, current collector and conductive agent can effectively obtain lager energy density as compared to the traditional electrodes where the addition of inactive components is required. In addition, the free-standing electrode plays an important role in developing flexible electronic devices. Currently, conventional graphite isstill the main commercial anode material, but its theoretical specific capacity is limited, and the rate performance is poor. In recent years, the high temperature pyrolytic hard carbon has attracted wide attention due to its higher theoretical specific capacity and more defects than graphite carbon. Moreover, polymer polyacrylonitrile (PAN) can be used as the raw material for preparation of free-standing anodes without any conductive additives or binders by electrospinning technique. Meanwhile, it is beneficial to reduce the production cost and simplify the manufacturing procedures of electrode. However, PAN-based hard carbon anode materials also have certain problems, such as low conductivity, poor rate performance, unsatisfactory cycling stability, and inferior initial Coulombic efficiency (CE). In addition, soft carbon has advantages of high carbon yield, good conductivity, superior cycling stability, high initial CE and relatively low price, but its specific capacity is generally lower than that of hard carbon materials. Based on above analysis, carbon anode materials with good electrochemical performance can be obtained by combining hard carbon and soft carbon, but the specific capacity of carbon materials is still low. Tin (Sn), as an anode material for LIBs, has a high theoretical specific capacity (994 mAh·g −1) and a low lithium alloying voltage. Nonetheless, the practical use of Sn anode has been limited by its huge volume change (theoretically ∼260%) during the repeated alloying-dealloying process, resulting in large pulverization and cracking, which triggers the rapid capacity fading. Hence, in order to increase the specific capacity of carbon anode materials of LIBs, the C-Sn composite film with uniform Sn nanoparticles embedded in N-doped carbon nanofibers was prepared byelectrospinning method following by a low-temperature carbonization process. The film was directly used as a free-standingelectrode for LIBs and exhibited good electrochemical performance, and the introduction of Sn significantly improved the electrochemical properties of the carbon nanofiber film. The formed fibrous structure after Sn was uniformly coated with carbon can promote the conduction of ions and electrons, and effectively buffers the volume change of Sn nanoparticles during cycling, thus effectively preventing pulverization and agglomeration. The C-Sn-2 electrode with a Sn content of about 25.6% has the highest specific capacity and best rate performance among all samples. The electrochemical test results show that, the charge (discharge) capacity reaches 412.7 (413.5) mAh·g−1 at a current density of 2 A·g−1 even after 1000 cycles. Density functional theory (DFT) calculations show that N-doped amorphous carbon has good affinity with lithium, which is conducive to anchoring the Sn x Li y alloy formed after alloying reaction on the carbon surface, thereby relieving the volume change of Sn during charge-discharge. This article provides a feasible strategy for the design of high-performance lithium storage materials.Key Words: Free-standing electrode; Carbon nanofiber; Metallic Sn; Li-ion battery; Cycling stability高性能锂离子电池用N掺杂C-Sn交联纳米纤维自支撑电极的理性设计李莹1,赵钰燊1,2,陈凯3,刘旭1,2,伊廷锋1,2,*,陈立锋3,*1东北大学材料科学与工程学院,沈阳 1108192东北大学秦皇岛分校资源与材料学院,河北省电介质与电解质功能材料重点实验室,河北秦皇岛 0660043中国科学院材料力学行为与设计重点实验室,中国科学技术大学工程科学学院热科学和能源工程系,合肥 230026摘要:为了提高碳材料作为锂离子电池负极材料的比容量,将氮掺杂的碳纤维与高容量的Sn进行复合。
半导体微电子专业词汇中英文对照概要
半导体微电子专业词汇中英文对照Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Acoustic Surface Wave 声表面波Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源(放大)区A/D conversion 模拟-数字转换Adhesives 粘接剂Admittance 导纳Aging 老化Airborne 空载Allowed band 允带allowance 容限,公差Alloy-junction device合金结器件Aluminum(Aluminum)铝Aluminum – oxide 铝氧化物Aluminum Nitride 氮化铝Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度A M light 振幅调制光,调幅光amplitude limiter 限幅器Amorphous 无定形的,非晶体的Amplifier 功放放大器Analogue(Analog)comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Antenna 天线Aperture 孔径Arsenide (As) 砷Array 阵列Atomic 原子的Atom Clock 原子钟Attenuation 衰减Audio 声频Auger 俄歇Automatic 自动的Automotive 汽车的Availability 实用性Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ball bond 球形键合Band 能带Band gap 能带间隙Bandwidth 带宽Bar 巴条发光条Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base—width modulation基区宽度调制Batch 批次Battery 电池Beam 束光束电子束Bench 工作台Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT)双极晶体管Bit 位比特Blocking band 阻带Body — centered 体心立方Body—centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Boron 硼Borosilicate glass 硼硅玻璃Bottom—up 由下而上的Boundary condition 边界条件Bound electron 束缚电子Bragg effect 布拉格效应Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊FBrillouin zone 布里渊区Buffer 缓冲器Built—in 内建的Build—in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn—in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Bus 总线Calibration 校准,检定,定标、刻度,分度Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carbon dioxide (CO2) 二氧化碳Carrier 载流子、载波Carry bit 进位位Cascade 级联Case 管壳Cathode 阴极Cavity 腔体Center 中心Ceramic 陶瓷(的)Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge—compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemical etching 化学腐蚀法Chemically-Polish 化学抛光Chemically-Mechanically Polish (CMP) 化学机械抛光Chemical vapor deposition (cvd)化学汽相淀积Chip 芯片Chip yield 芯片成品率Circuit 电路Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clean 清洗Clock rate 时钟频率Clock generator 时钟发生器Clock flip—flop 时钟触发器Close—loop gain 闭环增益Coating 涂覆涂层Coefficient of thermal expansion 热膨胀系数Coherency 相干性Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common—mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Communication 通信Compact 致密的Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal—Oxide—Semiconductor Field—Effect—Transistor(CMOS) 互补金属氧化物半导体场效应晶体管Computer—aided design (CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计/ 测试/制造Component 元件Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge) 导带(底)Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 结构Conlomb 库仑Constants 物理常数Constant energy surface 等能面Constant—source diffusion恒定源扩散Contact 接触Continuous wave 连续波Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Controlled 受控的Converter 转换器Conveyer 传输器Cooling 冷却Copper interconnection system 铜互连系统Corrosion 腐蚀Coupling 耦合Covalent 共阶的Crossover 交叉Critical 临界的Cross-section 横断面Crucible坩埚Cryogenic cooling system 冷却系统Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Cubic crystal system 立方晶系Current density 电流密度Curvature 曲率Current drift/drive/sharing 电流漂移/驱动/共享Current Sense 电流取样Curve 曲线Custom integrated circuit 定制集成电路Cut off 截止Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术(Cz法直拉晶体J)) Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Decade 十进制Decibel (dB)分贝Decode 解码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep energy level 深能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOS Depletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Detector 探测器Developer 显影剂Diamond 金刚石Die 芯片(复数dice)Diode 二极管Dielectric Constant 介电常数Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dimension (1)尺寸(2)量钢(3)维,度Diode 二极管Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct—gap semiconductor 直接带隙半导体Direct transition 直接跃迁Directional antenna 定向天线Discharge 放电Discrete component 分立元件Disorder 无序的Display 显示器Dissipation 耗散Dissolution 溶解Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Dose 剂量Double-diffusive MOS(DMOS)双扩散MOS Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Dual—polarization 双偏振,双极化Duty cycle 工作周期Dual—in—line package (DIP) 双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effect 效应Effective mass 有效质量Electric Erase Programmable Read Only Memory(E2PROM) 电可擦除只读存储器Electrode 电极Electromigration 电迁移Electron affinity 电子亲和势Electron-beam 电子束Electroluminescence 电致发光Electron gas 电子气Electron trapping center 电子俘获中心Electron Volt (eV)电子伏Electro-optical 光电的Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边(拥挤)效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量—动量(E—K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOSEnteric (低)共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Epoxy 环氧的Equivalent circuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Equipment 设备Erasable Programmable ROM (EPROM)可搽取(编程)存储器Erbium laser 掺铒激光器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Exponential 指数的Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Fabry-Perot amplifier 法布里—珀罗放大器Face — centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快表面态Feedback 反馈Fermi level 费米能级Femi potential 费米势Fiber optic 光纤Field effect transistor 场效应晶体管Field oxide 场氧化层Figure of merit 品质因数Filter 滤波器Filled band 满带Film 薄膜Fine pitch 细节距Flash memory 闪存存储器Flat band 平带Flat pack 扁平封装Flatness 平整度Flexible 柔性的Flicker noise 闪烁(变)噪声Flip-chip 倒装芯片Flip— flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Focal plane 焦平面Forbidden band 禁带Formulation 列式,表达Forward bias 正向偏置Forward blocking /conducting 正向阻断/导通Free electron 自由电子Frequency deviation noise 频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium—Arsenide(GaAs)砷化镓Gallium Nitride 氮化镓Gate 门、栅、控制极Gate oxide 栅氧化层Gate width 栅宽Gauss(ian)高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生—复合Geometries 几何尺寸Germanium(Ge) 锗Gold 金Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Graphene 石墨烯Grating 光栅Green laser 绿光激光器Ground 接地Grown junction 生长结Guard ring 保护环Guide wave 导波波导Gunn - effect 狄氏效应Gyroscope 陀螺仪Hardened device 辐射加固器件Harmonics 谐波Heat diffusion 热扩散Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Hell - effect 霍尔效应Hertz 赫兹Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor(HBT)异质结双极型晶体High field property 高场特性High-performance MOS(H-MOS)高性能MOS器件High power 大功率Hole 空穴Homojunction 同质结Horizontal epitaxial reactor 卧式外延反应器Hot carrier 热载流子Hybrid integration 混合集成Illumination (1)照明(2)照明学Image — force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Inch 英寸Incremental resistance 电阻增量(微分电阻)In-contact mask 接触式掩模Index of refraction 折射率Indium 铟Indium tin oxide (ITO)铟锡氧化物Inductance 电感Induced channel 感应沟道Infrared 红外的Injection 注入Input power 输入功率Insertion loss 插入损耗Insulator 绝缘体Insulated Gate FET(IGFET)绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Integrated Circuit 集成电路Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Laser 激光器Laser diode 激光二极管Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Lead 铅Leakage current (泄)漏电流Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid-phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Linearity 线性化Liquid 液体Lock in 锁定Longitudinal 纵向的Long life 长寿命Lumped model 集总模型Magnetic 磁的Majority carrier 多数载流子Mask 掩膜板,光刻板Mask level 掩模序号Mask set 掩模组Mass - action law 质量守恒定律Master-slave D flip—flop 主从D 触发器Matching 匹配Material 材料Maxwell 麦克斯韦Mean free path 平均自由程Mean time before failure (MTBF)平均工作时间Mechanical 机械的Membrane (1)薄腊,膜片(2)隔膜Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体FET Metalorganic Chemical Vapor Deposition MOCVD 金属氧化物化学汽相淀积Metallization 金属化Metal oxide semiconductor (MOS)金属氧化物半导体MeV 兆电子伏Microelectronic technique 微电子技术Microelectronics 微电子学Microelectromechanical System (MEMS)微电子机械系统Microwave 微波Millimeterwave 毫米波Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片MOSFET 金属氧化物半导体场效应晶体管Mount 安装Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti—chip module(MCM)多芯片模块Multilayer 多层Multiplication coefficient 倍增因子Multiplexer 复用器Multiplier 倍增器Naked chip 未封装的芯片(裸片) Nanometer 纳米Nanotechnology 纳米技术Negative feedback 负反馈Negative resistance 负阻Negative-temperature-coefficient负温度系数Nesting 套刻Noise figure 噪声系数Nonequilibrium 非平衡Nonvolatile 非挥发(易失)性Normally off/on 常闭/开Nuclear 核Numerical analysis 数值分析Occupied band 满带Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical—coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Oscillator 振荡器Outline 外形Out—of-contact mask 非接触式掩模Output characteristic 输出特性Output power 输出功率Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over—voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Pass band 通带Passivation 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Pattern 图形Payload 有效载荷Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Permeable — base 可渗透基区Phase—lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photonic devices 光子器件Photolithographic process 光刻工艺Photoluminescence 光致发光Photo resist (光敏)抗腐蚀剂Photo mask 光掩模Piezoelectric effect 压电效应Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎(效应)Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plane 平面的Plasma 等离子体Plate 板电路板P-N junction pn结Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly—silicon 多晶硅Positive 正的Potential (电)势Potential barrier 势垒Potential well 势阱Power electronic devices电力电子器件Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Print—circuit board(PCB) 印制电路板Probability 几率Probe 探针Procedure 工艺Process 工艺Projector 投影仪Propagation delay 传输延时Proton 质子Proximity effect 邻近效应Pseudopotential method 赝势法Pump 泵浦Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push—pull stage 推挽级Q Q值Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi-level 准费米能级Quartz 石英Radar 雷达Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination 辐照复合Radio 无线电射电射频Radio-frequency RF 射频Raman 拉曼Random 随机Range 测距Radio 比率系数Ray 射线Reactive sputtering source 反应溅射源Real time 实时Receiver 接收机Recombination 复合Recovery diode 恢复二极管Record 记录Recovery time 恢复时间Rectifier 整流器(管)Rectifying contact 整流接触Red light 红光Reference 基准点基准参考点Refractive index 折射率Register 寄存器Regulate 控制调整Relative 相对的Relaxation 驰豫Relaxation lifetime 驰豫时间Relay 中继Reliability 可靠性Remote 远程Repeatability 可重复性Reproduction 重复制造Residual current 剩余电流Resonance 谐振Resin 树脂Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管(器)Resolution 分辨率Response time 响应时间Return signal 回波信号Reverse 反向的Reverse bias 反向偏置Ribbon 光纤带Ridge waveguide 脊形波导Ring laser 环形激光器Rotary wave 旋转波Run 运行Sampling circuit 取样电路Sapphire 蓝宝石(Al2O3)Satellite valley 卫星谷Saturated current range 电流饱和区Scan 扫描Scaled down 按比例缩小Scattering 散射Schematic layout 示意图,简图Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Screen 筛选Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor laser半导体激光器Semiconductor-controlled rectifier 半导体可控硅Sensitivity 灵敏度Sensor 传感器Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shaping 成型Shield 屏蔽Shifter 移相器Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘体上硅Silver whiskers 银须Simple cubic 简立方Simulation 模拟Single crystal 单晶Sink 热沉Sinter 烧结Skin effect 趋肤效应Slot 槽隙Slow wave 慢波Smooth 光滑的Subthreshold 亚阈值的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Solution 溶液Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Space Craft 宇宙飞行器Spacing 间距Specific heat(PT)比热Spectral 光谱Spectrum 光谱(复数)Speed—power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spot 斑点Spray 喷涂Spreading resistance 扩展电阻Sputter 溅射Square root 平方根Stability 稳定性Stacking fault 层错Standard 标准的Standing wave 驻波State—of—the-art 最新技术Static characteristic 静态特性Statistical analysis 统计分析Steady state 稳态Step motor 步进式电动机Stimulated emission 受激发射Stimulated recombination 受激复合Stopband 阻带Storage time 存储时间Stress 应力Stripline 带状线Subband 次能带Sublimation 升华Submillimeter 亚毫米波Substrate 衬底Substitutional 替位式的Superconductor 超导(电)体Superlattice 超晶格Supply 电源Surface mound表面安装Surge capacity 浪涌能力Switching time 开关时间Switch 开关Synchronizer 同步器,同步装置Synthetic-aperture 合成孔径System 系统Technical 技术的,工艺的Telecommunication 远距通信,电信Telescope 望远镜Terahertz 太赫兹Terminal 终端Template 模板Temperature 温度Tensor 张量Test 测试试验Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thick— film technique 厚膜技术Thin— film hybrid IC 薄膜混合集成电路Thin—Film Transistor(TFT) 薄膜晶体Three dimension 三维Threshold 阈值Through Silicon Via 硅通孔Thyistor 晶闸管Time resolution 时间分辨率Tolerance 公差T/R module 发射/接收模块Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress)晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transmissivity 透射率Transmitter 发射机Transceiver 收发机Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Travelling wave 行波Trigger 触发Trim 调配调整Triple diffusion 三重扩散Tolerance 容差Tube 管子电子管Tuner 调节器Tunnel(ing)隧道(穿)Tunnel current 隧道电流Turn — off time 关断时间Ultraviolet 紫外的Ultrabright 超亮的Ultrasonic 超声的Underfilling 下填充Undoped 无掺杂Unijunction 单结的Unipolar 单极的Unit cell 原(元)胞Unity- gain frequency 单位增益频率Unilateral-switch 单向开关Vacancy 空位Vacuum 真空Valence(value)band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Variable 可变的Vector 矢量Vertical 垂直的Vibration 振动Visible light 可见光Voltage 电压Volt 伏特Wafer 晶片Watt 瓦Wave guide 波导Wavelength 波长Wave—particle duality 波粒二相性Wear-out 烧毁Wetting 浸润Wideband 宽禁带Wire 引线Wire routing 布线Work function 功函数Worst—case device 最坏情况器件X—ray X射线Yield 成品率Zinc 锌。
3m法电波暗室方案英文
3m法电波暗室方案英文Title: 3M Method Electromagnetic Dark Room SolutionIntroduction:The 3M Method, also known as the 'Magnetized, Metalized, and Meshed' method, is a highly effective solution for creating an electromagnetic dark room. An electromagnetic dark room is a controlled environment designed to eliminate external electromagnetic interference, enabling precise testing and measurement of electronic devices and equipment. This article will delve into the details of the 3M Method and its benefits.Magnetized:The first step in implementing the 3M Method is magnetization. This involves strategically placing magnets around the perimeter of the dark room. The magnets create a magnetic field that acts as a shield against external electromagnetic waves. By neutralizing the magnetic field, the 3M Method prevents any external electromagnetic interference from entering the dark room.Metalized:The second step of the 3M Method is metalization. The walls, ceiling, and floor of the dark room are coated with a layer of highly conductive metal, such as copper or aluminum. This metalized coating acts as a Faraday cage, enhancing the shielding capability of the dark room. The metal layer reflects and absorbs external electromagnetic waves, preventing them from penetrating the room and affecting the measurements or tests conducted inside.Meshed:The final step of the 3M Method is meshing. Fine mesh screens are installed on windows, doors, and ventilation systems of the dark room. These mesh screens act as additional barriers against electromagnetic waves, allowing the controlled environment of the dark room to remain undisturbed. The mesh screens are designed to have a specific mesh size that blocks the passage of electromagnetic waves while allowing air circulation and visibility.Benefits of the 3M Method:1. Enhanced Accuracy: By creating an electromagnetic dark room using the 3M Method, researchers, engineers, and scientists canachieve highly accurate test results and measurements. Eliminating external electromagnetic interference ensures that the data obtained is reliable and consistent.2. Confidentiality: The 3M Method provides an added layer of confidentiality by preventing any external interference that could compromise sensitive information or intellectual property. This makes it an ideal solution for research and development facilities or companies dealing with proprietary technologies.3. Compliance: Certain industries, such as aerospace, telecommunications, and healthcare, require strict compliance with electromagnetic compatibility regulations. The 3M Method ensures that the testing processes meet these standards, allowing companies to avoid costly penalties and legal issues.Conclusion:The 3M Method provides an effective solution for creating an electromagnetic dark room, enabling accurate and reliable testing and measurements of electronic devices and equipment. By magnetizing, metalizing, and meshing, the dark room becomesshielded from external electromagnetic waves, ensuring a controlled environment. The benefits of implementing the 3M Method include enhanced accuracy, confidentiality, and compliance with industry standards.。
摩尔云纹变化产生感应电流的英文
摩尔云纹变化产生感应电流的英文
English: The changing patterns of moiré fringes are able to induce a current through a process known as the moiré effect. When two transparent or semi-transparent materials with distinct patterns are overlaid, the interference of their patterns creates areas of varying light and dark fringes. As one material is shifted or deformed, the patterns change and the fringes move, inducing an electrical current. This phenomenon has been utilized in various fields, including touchscreens, strain sensing, and even in art and design.
中文翻译: 摩尔云纹的变化模式能够通过摩尔纹效应诱导出电流。
当两种具有明显图案的透明或半透明材料叠加在一起时,它们图案的干涉会产生变化的明暗条纹。
当其中一种材料被移位或变形时,图案会发生变化并且条纹会移动,诱发出电流。
这种现象已经被应用在各个领域,包括触摸屏、应变传感甚至艺术和设计中。
Omega Engineering OS4000 高速光纤红外传感器系统说明书
High Speed Fibre Optic Infrared Transmitteris “Spot-On”for Temperature MeasurementOmega Engineering has introduced a high speed industrial fib e r optic infrared transmitter and probe system ,the OS4000,which offers many new and important measurement capabilities (See Figure 1).These include an optical field of view or spot size as small as 0.025”,which is less than half the size typically available,and a response time as fast as 1msec,an order of magnitude faster than similar devices.is CE compliant and Before we review this product,let’s review this product category and take a look at some typical applications.Infrared Probe DevicesOne of the most effective methods of making non-contact high temperature measurements in industrial applications is with a fib e r optic infrared probe.These devices typically consist of a lens probe assembly which is aimed at the object to be measured,and a fib e r optic interconnecting cable,which is connected to an electronics package,the transmitter,to make the temperature measurement and convert it into a useable output signal.Let’s examine each of these components.The probe assembly consists of a housing suitable for the conditions to which it will be exposed,a lens or an optical rod to collect the infrared radiation from the target,and an opticalfib e r interface for connection to the fib e r optic cable.The probe is usually placed within a few inches of the object being measured.Because of this,the construction of the probeassembly can vary dramatically.For measurements in an open airenvironment,it can be a simple metal cylinder;however,it is not uncommon for these devices to be used in very harsh environments.This may be in a high temperature chamber,under a vacuum,in a corrosive atmosphere,andeven immersed in molten plastic.As a result,specialised probes may have threaded housings,be constructed of special materials such as ceramics,and even have non-glass lenses or glass or quartz optical rod (tips).The fibre optic interconnecting cable acts as a waveguide to bring theradiation to the infrared detector assembly in the electronics package.The quality of the fib re optic interfaces at each end is critical to overall system accuracy and repeatability.Because the signal is transmitted optically,it is immune to the often substantial electrical and magnetic interference found in industrial settings.The electronic package does the work of converting the infrared radiation delivered by the fibre optic cable into a temperature reading or a signal proportional to the temperature.It may include many enhancements such as high and low temperature alarms,various output options,and even a computer interfaceconnection.Figure 1-OS4000High Speed IndustrialFib e r Optic TransmitterApplications for Non-Contact Temperature MeasurementAlthough thermocouples are the most common temperature measurement devices in process control,they have their limitations.They must be in contact with the measured object,they have a slow response time, and they are subject to electrical and magnetic interference.Fibre optic infrared transmitters overcome these issues but are generally limited to reading temperatures above100°C.This limitation is imposed by the fibre optic cable which cannot transmit infrared energy below a certain wavelength.This is dependent on the cross-section of the fibre optic strands and their optical properties.Following are some typical applications.Annealing ProcessesThe critical surface temperature of the metal can be monitored directly while it isinside an oven,rather than indirectly by measuring the ambient oven temperature.Induction Heating of MetalThe strong RF field used can heat up conventional heating devices and interferewith their electronics,while fibre optics is immune to RF fields.Plastic Extrusion and Injection MouldingPrecise control of the melt temperature is essential for proper polymer formation.An infrared reading eliminates errors that are common for thermocouple-baseddevices immersed in the plastic flow.Drill Bit Temperature MonitoringFor high speed PC board drilling,wear can be determined by optically monitoringthe drill bit temperature.Semiconductor Doping,Deposition or SputteringSince these processes are usually carried out in a vacuum or controlled gasatmosphere using induction heating,conventional temperature measurementdevices cannot be used.Any high-temperature application where a direct measurement of thepart temperature is critical to success.The OS4000High Speed Industrial Fibre Optic Infrared Transmitter is quite a versatile product with many options and configuration choices.It covers a temperature range of 100to 1600°C with sampling rates ranging from an extraordinary 1msec up to 3.2seconds.This unit also offers Peak &Hold function with an adjustable holding time.The optical field of view ranges from 0.22”to a very small 0.025”.This is the smallest spot size available on a standard product,and a customised version can go as low as 0.010”spot bined with the high sampling rate,the small spot size can catch transient temperature variations that would otherwise go undetected or closely track the temperature of very small objects such as wire strands or small diameter drill bits.The fibre optic cable has a high strand count and can tolerate certain amount of abuse without impacting the unit’s performance.Because measurement conditions vary widely,several probe options are available;a fibre optic lens probe in which the lens determines the field of view,a fibre optic tip probe for general purpose applications,and a polymer bolt probe for immersion in polymer plastic flow,which is threaded so it can be inserted through a pipe or chamber wall.In addition to the common metal housing,there is a ceramic housing for high temperature conditions with a choice of glass or quartz tip assemblies.A built-in laser sighting aids in aligning the field of view to the exact measurement location.The transmitter contains the electronic package and converts the infrared signal into a useful format.It has a connector for the fibre optic probe at one end and one for power and output signals at the other end (See Figure 2).The OS4000offers a choice of analogue outputs for connection to a display device,a data logger,or a process control system.Configurations for every common industrial system are available:1mV/deg,0to 5Vdc,0to 10Vdc,and 4to 20mA,so interfacing is no problem.Additionally,high and low alarm relay contact closures are available for signaling or control system use.An Emissivity adjustment covers the range from 0.05to 0.99.Although the unit is standalone,it also includes an RS232PC interface,which adds data logging capability and some other useful features.As an option,a wireless transceiver like Omega’s WRS232-USB can be used to eliminate cabling between the OS4000and a possibly distant PC,and make the data communication wireless.About the OS4000Figure 2-OS4000Transmitter Front and RearViewsCONNECTORLOW ALARM HIGH LED TORPOWERLEDINDICA TORBACK PLA TE ST ANDARDThe OS4000Software PackageHats off to the software designer,because you will know how to use this feature by simply looking at it.The layout is intuitive and straight forward,with only two screens(see Figures3and4)requiring your attention. The screen displays the temperature reading in analogue and digital format and charts the readings over time.An image of the OS4000back panel shows the status of the LED indicators and can be used to turn the laser alignment feature on and off.The settings screen is used to set the high and low alarms,temperature units,and sampling rate.The time base and scaling of the charting function are also controlled here. Additionally,for analysis and archiving purposes,data points can be saved to a data file which can then be imported into a spreadsheet.Figure3–OS4000Software Main ScreenFigure4–OS4000Software Settings ScreenThe OS4000is a state of the art infrared measurement tool.The wide choice of analogue output options,wide temperature range,probe assembly models,excellent software interface,and custom capability makes this product an excellent choice for infrared temperature measurement applications.When a spot size of0.025”is needed or the sampling rate requirement is in the1msec range,then it is a no-brainer;choosing the OS4000in these situations will be“spot-on.”©COPYRIGHT2009OMEGA ENGINEERING,INC.ALL RIGRESERVED.REPRODUCED WITH THE PERMISSION OFOMEGA ENGINEERING,INC.,STAMFORD,CT06907.CANADA www.omega.ca Laval(Quebec)1-800-TC-OMEGA UNITED KINGDOM Manchester,England0800-488-488GERMANY www.omega.deDeckenpfronn,Germany************FRANCE www.omega.fr 088-466-342BENELUX www.omega.nl 0800-099-33-44UNITED STATES 1-800-TC-OMEGA Stamford,CT.CZECH REPUBLIC www.omegaeng.cz Karviná,Czech Republic596-311-899TemperatureCalibrators, Connectors, General Test and Measurement Instruments, Handheld Instruments for Temperature Measurement, Ice Point References, Indicating Labels,Crayons, Cements and Lacquers, Infrared Temperature Measurement Instruments, Recorders, Relative Humidity Measurement Instruments, PT100 Probes, PT100 Elements,Temperature & Process Meters, Timers and Counters,Temperature and Process Controllers and Power Switching Devices, Thermistor Elements, Probes and Assemblies,Thermocouples, Thermowells and Head and WellAssemblies, Transmitters, Thermocouple Wire, RTD ProbesPressure,Strain and ForceDisplacement Transducers, Dynamic Measurement Force Sensors, Instrumentation for Pressure and StrainMeasurements, Load Cells, Pressure Gauges, PressureReference Section, Pressure Switches, Pressure Transducers,Proximity Transducers, Regulators, Pressure Transmitters,Strain Gauges, Torque Transducers, ValvespH and ConductivityConductivity Instrumentation,Dissolved OxygenInstrumentation,Environmental Instrumentation,pH Electrodes and Instruments,Water and Soil Analysis InstrumentationHeatersBand Heaters,Cartridge Heaters,Circulation Heaters,Comfort Heaters,Controllers,Meters and SwitchingDevices,Flexible Heaters,General Test and Measurement Instruments,Heater Hook-up Wire,Heating Cable Systems,Immersion Heaters,Process Air and Duct,Heaters,Radiant Heaters,Strip Heaters,Tubular HeatersFlow and LevelAir Velocity Indicators,Doppler Flowmeters,LevelMeasurement,Magnetic Flowmeters,Mass Flowmeters,Pitot Tubes,Pumps,Rotameters,Turbine and Paddle Wheel Flowmeters,Ultrasonic Flowmeters,Valves,Variable Area Flowmeters,Vortex Shedding FlowmetersData AcquisitionAuto-Dialers and Alarm Monitoring Systems,Communication Products and Converters,Data Acquisition and Analysis Software,Data LoggersPlug-in Cards,Signal Conditioners,USB,RS232,RS485and Parallel Port Data Acquisition Systems,Wireless Transmitters and Receivers。
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G. Y. Georgiannakis, P. E. Trahanias, C. N. Nikolaou and S. C. Orphanoudakis
Institute of Computer Science, FORTH and Department of Computer Science, University of Crete
1 Introduction
In the last few years, an outburst has taken place in research concerning multimedia systems. Multimedia systems o er the possibility to combine text, computer graphics, video and audio, as well as other forms of information in computer displays. This research has been extented to teleconferencing applications to support remote conferencing with systems that feature the above capabilities. Such systems o er substantial money and time savings, being an interesting substitute to actual conferences between remotely located parties. Teleconferencing is a broad term applicable to a wide spectrum of communication sessions, where two or more parties at di erent locations may collaborate
Abstract. This paper concerns the design of a system supporting tele-
conferencing applications. This system aims at creating an immersive environment by compositing a synthetic background with the reconstructed images of remote participants. It also presents natural scenes by employing viewer tracking and rendering images from the vantage point of the viewer. Processing requirements are met by exploiting existing networks of workstations by means of a quality of service based resource management scheme. This approach o ers advantages with respect to the application itself (teleconferencing) and resource requirements. By restricting the transmitted images to the participants only, the required bandwidth becomes much smaller and video quality can be achieved. The employed resource management scheme limits computational resources to general purpose workstations. On the other hand, a synthetic background that matches the real meeting room can be easily designed, giving the impression of a virtual meeting room as an extension of the real one. In this way, remote conference sessions that resemble real life meetings can be held.
2 Teleconference Applications
Recently there has been an increasing interest in media spaces as a means to support synchronous collaboration. These systems allow simultaneous, two-way transmission of auditory and visual information and, thus, simulate the every day media that people use to collaborate. The term media space actually indicates the analogy between these arti cial environments to the actual environments, where collaborating people communicate every day. There are two di erent approaches to create such systems. The rst approach is a computer centered approach, where collaboration is realized by means of shared window systems, and applications where images of collaborating partners are presented in a small window on the computer displays. The second approach creates shared workspaces based on audio and video communication. Such systems handle information that is external to the computers, such as voices and images of people. They aim at providing a sense of
by exchanging and/or manipulating information. A particular term, namely media space 4], aims at supporting the inherently social and technical collaborative work by existing technology means. In such a setting, groups of people may work together, although they may be separated by long distances, by exploiting visual and acoustic environments that resemble actual meetings. Unfortunately, the audio and video media that are used in teleconferencing convey only a limited subset of visual and auditory information when compared to actual face-to-face meetings. Therefore, media spaces can be currently regarded as an inferior substitute for actual meetings. In fact, in media space environments the perceived information is partial when compared to the rich information grasped in real life meetings. In this paper we are primarily concerned with a teleconferencing application, where audio and visual communication between persons at di erent locations is immersive. In other words, the whole setting creates a virtual environment where people involved may meet and discuss as if they were face-to-face. Such an environment exploits vision and stereo techniques, so that participating partners have the illusion of being next to the other without the need of special virtual reality equipment. This application exploits available computational resources within an organization, so that image processing techniques can isolate participating persons while rendering and compositing may incorporate participants in arti cially created backgrounds. Such an environment is particularly useful in meetings where body language, gestures and location of partners are essential. The rest of this text is structured as follows. In the next section we review teleconference applications that aim at creating a virtual representation of the actual meeting place and participants. Then we present the major issues that should be addressed by teleconferencing applications. The remainder of the paper is dedicated to the Immersive Teleconferencing Application (ITA). Initially, the major components of ITA and their interconnection are presented. Then, resource management issues are discussed and concluding remarks are made.