THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES
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专利名称：THREE-DIMENSIONAL SEMICONDUCTOR
MEMORY DEVICES
发明人：Kang-Won Lee,Jaeyoung Song,Dong-Sik
Lee,Donghoon Jang
申请号：US17355824
申请日：20210623
公开号：US20210320126A1
公开日：
20211014
专利内容由知识产权出版社提供
专利附图：
摘要：In a 3D semiconductor memory device, a stack structure includes electrodes and first insulating layers disposed between the electrodes. The stack structure has a
stair structure on a connection region. A vertical channel structure penetrates the stack structure on a cell array region. A vertical dummy structure penetrates the stair structure on the connection region. A second insulating layer is selectively disposed on the cell array region. A maximum thickness of the second insulating layer ranges from 1.5 times to 10 times a maximum thickness of the first insulating layer on the second insulating layer. The vertical channel structure includes an abrupt diameter change at a level of a top surface of the second insulating layer. The abrupt diameter change has a surface which is parallel to the top surface of the second insulating layer and is substantially coplanar with the top surface of the second insulating layer.
申请人：SAMSUNG ELECTRONICS CO., LTD.
地址：Suwon-Si KR
国籍：KR
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