深圳市数冠电子科技有限公司 PT1921B 红外应用系统说明书

Emitter
Note: 1. All dimensions are in millimeters(inches)
2. Tolerances unless dimensions ± 0.1mm(.004")
3. Suggested pad dimension is just for reference only Please modify the pad dimension based on need
For reflow soldering (proposal)
Collector Mark
Technical Data Sheet
0603SMD Phototransistor :PT1921B
⏹Features
․Fast response time ․High photo sensitivity ․Pb free
․Compliance with EU REACH
․
The product itself will remain within RoHS compliant version.
⏹Descriptions
PT1921B is a high speed and high sensitive NPN silicon planar phototransistor in a miniature flat top view lens SMD package.The device is spectrally matched to visible and infrared emitting diode.
⏹Applications
․Infrared applied system ․Miniature switch ․Position sensor ․Encoder
․Counters and sorter
⏹Package Dimensions
⏹Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol Rating Units Collector-Emitter Voltage V CEO 30V Emitter-Collector-Voltage V ECO 5V Collector Current
I C 20mA Power Dissipation at (or below)25℃Free Air Temperature Pc 75mW Lead Soldering Temperature Tsol 260℃Operating Temperature Topr -20~+85℃Storage Temperature
Tstg
-40~+85
℃
⏹Electro-Optical Characteristics (Ta=25℃)
Parameter
Symbol Condition Min.Typ.Max.Units
Range of Spectral Bandwidth λ0.5---730--1100nm Wavelength of Peak Sensitivity λp -----940--nm Collector –Emitter Breakdown Voltage BV CEO I C =100μA Ee=0mW/cm 230----V Emitter-Collector Breakdown Voltage BV ECO I E =100μA Ee=0mW/cm 25----V Collector-Emitter Saturation Voltage V CE(sat)
I C =2mA
Ee=1mW/cm 2----0.4V Rise Time tr V CE =5V I C =1mA RL=1000Ω--15--μS Fall Time
t f
--15--μS DC Current Amplification Factor
H FE
V CE =5V,IC=2mA 1000--1800Collector Dark Current I CEO Ee=0mW/cm 2V CE =20V ----100nA On State Collector Current
I C(on)
Ee=1mW/cm 2V CE =5V
0.7
1.5
--
mA
Ambient Temperature Ta(°C)
C o l l e c t o r P o w e r
D i s s i p a t i o n (m W )
40100020406080100
-20
-40608020300Ambient Temperature Ta(°C)
R e l a t i v e C o l l e c t o r C u r r e n t (%)
406080
60100160
Vce=5V
204080120140Ee=1mW/cm 210205070100
8060200
600
Wavelength(nm)
R e l a t i v e S p e c t r a l S e n s i t i v i t y (%)
Ta=25°
40700
800
900
10001100
1200
1Irradiance Ee(mW/cm )
C o l l e c t o r C u r r e n t I c (m A )
1.53
0.5
10101010102
10Vce=5V
T =25 C
a °2 Typical Electro-Optical Characteristics Curves
Fig.1Collector Power Dissipation vs.Fig.2Spectral Sensitivity
Ambient Temperature
Fig.3Relativ Collector Current vs.
Fig.4Collector Current vs.
Ambient Temperature
Irradiance
25
Ambient Temperature (°C)
C o l l e c t o r
D a r k C u r r e n t I
C E O
(n A )
50
75
100
0.1
1
10
100
Vce=20V 0Collector-Emitter Voltage V CE (V)
C o l l e c t o r C u r r e n t I c (m A )
1
2
3
4
0.51.01.52.02.53.0
3.5Ee=0.5mW/cm
2
Ee=0.75mW/cm 2Ee=1.0mW/cm 2Ee=1.25mW/cm 2Ee=1.5mW/cm
2
Note: 1. All dimensions are in millimeters(inches ）
Fig.5Collector Dark Current vs.
Fig.6Collector Current vs.
Ambient Temperature
Collector-Emitter Voltage
Packing Dimensions
Note: 1. All dimensions are in millimeters(inches)
Emitter
Collector
⏹Carrier Tape Dimensions (Quantity:3000pcs/reel)
⏹Notes
1.Above specification may be changed without notice.SHUGUAN will reserve authority on material change for above specification.
2.When using this product,please observe the absolute maximum ratings and the instructions for using outlined in these specification sheets.SHUGUAN assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets.
3.These specification sheets include materials protected under copyright of SHUGUAN
corporation.Please don’t reproduce or cause anyone to reproduce them without SHUGUAN’s consent.。