ESM1602资料

ESM1602B
January 1996
QUAD COMPARATOR INTERFACE CIRCUIT
.MINIMUM HYSTERESIS VOLTAGE AT EACH INPUT :0.3V
.OUTPUT CURRENT :15mA
.LARGE SUPPLY VOLTAGE RANGE :+10V to +35V
.INTERNAL THERMAL PROTECTION
.
INPUT AND OUTPUT CLAMPING PROTEC-TION DIODES.
DESCRIPTION
The ESM1602Bis a quadruplecomparatorintented to provide an interface between signal processing and transmitting lines in very noisy industrial sur-roundings.
Outputof each comparator,used as line driver,sup-plies a constant current (PNP output stage)and is specially well protected against powerful overvol-tages.The open collector output circuit allows the connectionof several comparatorsto a single trans-mitting line.
The ESM1602B can operate as receiver on a line transmitting noisy high-voltage signals.Hysteresis effect,internally implemented on inputs of each comparator provides an excellent noise immunity.In addition,each input is also protected against overvoltages.
The ESM1602B can operate in a wide supply vol-tage range (standard operational amplifier ± 15V supply or single +12V or +24V supplies used in industrial electronic sets).
Moreover,internal thermal protection circuitry cuts out the output current of the four comparatorswhen power dissipation becomes excessive.
DIP14
SO16
DIP14
SO16
1-Inverting input 12-Non-inverting input 13-Output 1
4-Non-inverting input 2
5-Inverting input 26-Output 27-GND 8-Output 3
9-Inverting input 310-Non-inverting input 311-Output 4
12-Non-inverting input 4
13-Inverting input 414-V CC
1-Inverting input 12-Non-inverting input 13-Output 1
4-Non-inverting input 25-Inverting input 26-Output 27-GND 8-N.C.9-N.C.10-Output 3
11-Inverting input 3
12-Non-inverting input 313-Output 4
14-Non-inverting input 415-Inverting input 416-V CC
ORDER ING NUMBERS:ESM1602B (DIP14)
ESM1602BFP (SO16)
PIN CONNECTIONS (top view)
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ESM1602B
SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit V CC Supply Voltage45V V ID Differential Input Voltage45V V I Input Voltage–0.7to+45V I O(max)Output Current Internally Limited mA
P tot Power Dissipation Internally Limited W T op Operating Ambient Temperature Range–25to+85o C T stg Storage Temperature Range–40to+150o C
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ELECTRICAL CHARACTERISTICS
V CC =+35V,-25o C ≤T amb ≤+85o C (unless otherwise specified)
Symbol Parameter
Min.Typ.Max.Typ.Fig.
V I +V I
–
Input Voltage Range -Note 1
Non-inverting Input Inverting Input
023333V V V C Input Control Voltage (2V <V CM <33V)-Note 2150
500
mV 8I IB Input Bias Current -Note 31
5µA I SC Short-circuit Output Current
V CC =+10to +35V
6
25mA 9V CC –V O
Output Saturation Voltage (high level)-(I O =–10mA)1 1.5V 11V O Output Saturation Voltage (high level)-(I O =–10mA)1 1.6V 12I CC Supply Current
R L =∞for the 4Comparators
R L Common for the 4Comparators 410
613
mA mA 13,14
S VO Output Slew-rate (R L =3k Ω,T amb =+25o C)1
V/µs
V F Input Protective Diode Forward Voltage
(I =20mA,T amb =+25o C)
1.5V –Energy of Pulses against which Circuit Output is Protected
(T amb =+25o
C)-Note 4
20
mJ –
Pulsed Current Applied to Protective Output Diodes
(T amb =+25o C)-Note 5
0.4
A
15
No tes : 1.When negative input is biased between 0and 2volts output is always low.
parator hysteresis voltage on positive input on the one hand and negative input on the other hand equals sum of input control
voltages V C1+V C2or V C3+V C4.
3.Input current flows out of the circuit owing to PNP input stage.This current is constant and indepe ndent of output level.So no load
change is transmitted to inputs.
4.By definition,a circuit is immunized against powerful signals when no durable character istic change occurs after the application of
these signals and when the circuit has not been destroyed.
In industrial surround ings,parasitic signals contain usually high voltage (over 200V)AC harmon ics having variable impedan ce of 500Ωto 10k Ω.
The powerdissipation of thesesignals is dividedbetweenclamping diodes and the V CC .Simulationis usedto determine themaximum energ y level.The injected current value cann ot in any case exceed 3A.
5.Output protective diodes are tested individually by means of positive and negative discharge voltages of a capacitor.The negative
discharg e control occurs through a single diode.During positive discharge,due to theproperties of integration,a groun ded collector PNP transistor appea rs in parallel with the clamping diode connecte d to V CC .A part of the current flows through this transistor,V CE being greater than V CC .If T is the total discharge duration,energy dissipated in the circuit is :
For a certain injected current,the lower the current I 2,that is to say the lower the PNP current gain the smaller the energy is dissipated in the cir-cuit.Topology and technological processes have been chose n to shorten this current gain.
W =⌠⌡T [i 1⋅vd +i 2(VCC +vd) ]
dt
O
ESM1602B
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ESM1602B
Figure1:Input Bias Current Figure2:OutputSaturation Voltage Figure3:Output Saturation Voltage Figure4:ShortCircuit Current
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ESM1602B
TYPICAL APPLICATIONS
Figure5:Conversion of DTL,TTL,MOS Signals on a Transmitting Line.
Figure6:Reception of Highly Noisy Signals.
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ESM1602B Figure7.
TEST CIRCUITS Figure8.
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ESM1602B Figure9.Figure10.
Figure11.Figure12.
Figure13.Figure14.
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ESM1602B
Figure15.
Figure16:ResponseTime. 8/11
DIP14PACKAGE MECHANICAL DATA
Dimensions Millimeters Inches
Min.Typ.Max.Min.Typ.Max.
a10.510.020
B 1.39 1.650.0550.065
b0.50.020
b10.250.010
D200.787 E8.50.335
e 2.540.100
e315.240.600
F7.10.280 i 5.10.201 L 3.30.130
Z 1.27 2.540.0500.100D I P 1 4 . T B L
ESM1602B
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S016PACKAGE MECHANICAL DATA
Dimensions Millimeters Inches
Min.Typ.Max.Min.Typ.Max.
A 1.750.069
a10.10.20.0040.008 a2 1.60.063 b0.350.460.0140.018 b10.190.250.0070.010 C0.50.020
c145o(typ.)
D9.8100.3860.394
E 5.8 6.20.2280.244
e 1.270.050
e38.890.350
F 3.8 4.00.1500.157
G 4.6 5.30.1810.209 L0.5 1.270.0200.050 M0.620.024 S8o(max.)S O 1 6 . T B L
ESM1602B 10/11
元器件交易网
ESM1602B Information furnished is believed to be accurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsibility for
the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its
use.No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specification
mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously
supplied.SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
©1997SGS-THOMSON Microelectronics–Printed in Italy–All Rights Reserved
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