微量镓对精铝电化学腐蚀性能的影响

微量镓对精铝电化学腐蚀性能的影响
林金平;王俊;赵洪生
【期刊名称】《腐蚀与防护》
【年(卷),期】2011(032)006
【摘要】The effect of trace amount Ga (0. 02% to 0. 06%) on the corrosion behavior of pure Al (99. 99%, 4N) in NaCl solution was investigated by potentiodynamic polarization technique and EIS. The results showed that the open circuit corrosion potential and pitting potential of Al shifted to active (negative) direction with the increase of Ga content, while the corrosion rate and pitting occurrence factor increased. From EIS test, the calculated results showed that the resitivity of oxide film on pure Al decreased with the increase of Ga content. The effect of Ga on the degradation of corrosion resistance was rather small when the Ga content was below 0. 03%. The Ga content should be kept less than 0. 03% in the pure AL%采用电化学测试法研究了微量镓(0.02％～0.06％Ga,质量分数,下同)的添加对4N精铝在5％NaCl溶液中的耐蚀性能.结果表明,随着Ga含量的增加,精铝的开路电位和点蚀电位朝着负方向移动,腐蚀速率和点蚀发生系数增大；电化学阻抗谱结果表明,随着Ga含量的增加,精铝的氧化膜电阻减小,材料耐蚀性降低；当Ga含量低于0.03％时,Ga对精铝的耐蚀性的影响较小.因此,精铝中的Ga含量应控制在0.03％以下.
【总页数】4页(P455-457,462)
【作者】林金平;王俊;赵洪生
【作者单位】国核工程有限公司，上海,200233;上海交通大学金属基复合材料国家重点实验室，上海,200240;包头铝业有限公司，包头,014040
【正文语种】中文
【中图分类】TG174.43
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