Low temperature properties of a new Kondo Lattice compound Yb$_2$Ir$_3$Sn$_5$

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低温的英语

低温的英语Low TemperatureIntroduction:Temperature is a measure of the average kinetic energy of the particles in a substance. Low temperature refers to the state at which the temperature is significantly lower than the normal room temperature. Low temperatures can have various effects on different materials, organisms, and processes. In this article, we will explore the significance and implications of low temperature. Effects on Materials:Low temperature can have significant effects on various materials. One of the most noticeable effects is the change in physical properties. For example, metals tend to become more brittle at low temperatures, which can lead to an increased risk of fracture. Similarly, plastics and rubber materials may lose their elasticity and become stiff and inflexible. Some materials may also experience a contraction in volume when exposed to low temperatures.In addition to physical changes, low temperature can also affect the chemical properties of materials. Certain chemical reactions may slow down or even come to a halt at low temperatures. This can have implications for industrial processes that rely on these reactions. For instance, the production of certain chemicals or pharmaceuticals may be hindered in cold climates.Effects on Organisms:Low temperature has a profound impact on various organisms,including plants, animals, and microorganisms. Many organisms have developed strategies to survive in cold environments. For example, some plants shed their leaves during winter to conserve energy and protect themselves from the freezing temperatures. Animals that hibernate during the winter reduce their metabolic rates to survive the scarcity of food and the harsh cold conditions.Microorganisms, such as bacteria and fungi, also exhibit interesting adaptations to low temperatures. Some microorganisms can enter a dormant state, where their metabolic activity is significantly reduced. This enables them to survive in extreme cold environments, such as polar regions. The study of these organisms and their adaptations to low temperature environments has applications in various fields, including medicine and biotechnology.Technological Implications:Low temperature is of great significance in various technological applications as well. For instance, the field of cryogenics involves studying the behavior of materials at very low temperatures, typically below -150 degrees Celsius. Cryogenic technology finds applications in areas such as the production and storage of superconductors, which have various electronic and medical applications.Another technological implication of low temperature is the use of refrigeration systems. These systems utilize the cooling effect of low temperature to preserve and store food items, vaccines, and other perishable goods. Without such refrigeration technology, it would be challenging to maintain the quality and safety of theseitems.Conclusion:In conclusion, low temperature has diverse effects on materials, organisms, and technological processes. It can alter the physical and chemical properties of materials, impact the survival strategies of organisms, and find applications in various technological fields. Understanding and harnessing the power of low temperatures enables us to develop innovative solutions and improve our lives in numerous ways.。

Low-Temperature Solution Processed Tin Oxide Efficient Perovskite

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Low-Temperature Solution-Processed Tin Oxide as an Alternative Electron Transporting Layer for Eﬃcient Perovskite Solar Cells
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making it not the ultimate ETL material. For example, the electron mobility of TiO2 is not high enough. Zhou et al. showed that Y-doping can increase the electron mobility and electrical conductivity of TiO2 and therefore improve the eﬃciencies for perovskite cells.7 However, doping may not be able to completely overcome the intrinsic low electron mobility issue. Moreover, Snaith et al. reported that perovskite solar cells using mesoporous TiO2 are sensitive to ultraviolet (UV) illumination.24 There exist other transparent metal oxides, such as ZnO, In2O3, and SnO2, that exhibit similar or even better electrical and optical properties as compared to TiO2. Especially, these oxides exhibit a much higher electron mobility than TiO2.25 Recently, Liu et al. reported that a planar perovskite solar cell using a low-temperature solution-processed nanoparticle (ZnO) ETL achieved a high PCE of 15.7%.26 The results suggest that metal oxides other than TiO2 can be good ETL materials for high-eﬃciency perovskite solar cells. SnO2 is a metal oxide that has not only a much higher electron mobility but also a wider band gap than TiO2.25,27 Because ETLs absorb photons with energies higher than the band gap but do not contribute to photocurrents, such absorptions cause only a small current loss. Therefore, SnO2 should lead to a smaller ETL-induced current loss than TiO2. For ultra-high-eﬃciency cells, every potential energy loss should be eliminated. Moreover, SnO2, with a wider band gap, is more stable than TiO2 under UV illumination.25 Fluorine-doped SnO2 (FTO) is a robust transparent conducting electrode that has been widely used in the thin- ﬁ lm solar cell industry. Gelled SnO2 nanoparticles have been used as ETLs for polymer-based solar cells.28 Dye-sensitized solar cells using high-temperature prepared mesoporous SnO2 particles coated with TiO2 and MgO have achieved high eﬃciencies.27 However, there is no report on eﬃcient perovskite solar cells using SnO2 as both ETLs and antireﬂection ﬁlms. Here, we report on low-cost and low-temperature solutionprocessed SnO2 as an ETL material for achieving highly eﬃcient planar perovskite solar cells. The best-performing planar cell using a SnO2 ETL has achieved PCEs of 17.21% and 14.82% when measured under reverse and forward voltage scans, respectively. The perovskite solar cells using SnO2 ETLs

Low temperature field-effect in crystalline organic material

Low Temperature Field-Effect in Crystalline Organic MaterialV. Y. Butko*†, J. C. Lashley* and A. P. Ramirez‡,¶*Los Alamos National Laboratory, Los Alamos, New Mexico, USA‡Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NY, USA¶Columbia University, New York, NYMolecular organic materials offer the promise of novel electronic devices but also present challenges for understanding charge transport in narrow band systems. Low temperature studies elucidate fundamental transport processes. We report the lowest temperature field effect transport results on a crystalline oligomeric organic material, rubrene. We find field effect switching with on-off ratio up to 107 at temperatures down to 10 K. Gated transport shows a factor of ~10 suppression of the thermal activation energy in 10-50 K range and nearly temperature independent resistivity below 10 K.Interest in organic devices stems from their mechanical flexibility, their potential for interfacing to biological systems, and their ease of processing over large areas. [1-4]. Work on single-molecule devices also motivates the need for scalable approaches to integrated molecular electronics [5, 6] Unlike the development of inorganic semiconductor devices, applications for organics are well ahead of fundamental understanding, especially concerning scattering and trapping mechanisms and their chemical and morphological origins.One of the key questions for organic semiconductors is what fraction of charge injected by gate bias in a field effect transistor (FET) configuration is either itinerant or localized, the latter due to deep-level trapping. The most stringent test of localization is to cool such a device to very low temperatures where the mobility edge can be probed without the complication of thermal activation. Low-temperature time-of-flight experiments on high-quality single crystals of naphthalene and anthracene suggest that band transport with mobility values, µ > 100, is attainable [7]. In this work we present the first low-temperature measurements on field effect devices made from a crystalline oligomeric organic material, rubrene.The first organic single crystal FETs made from rubrene, pentacene, and tetracene had carrier mobility (µ) ≤1 cm2/(Vs) [8-11]. All of these devices demonstrated thermally activated resistivity, ρ =ρ0exp(E a/k B T), whereE a is an activation energy, below 270 K. Recent work [12,13] on rubrene single crystal FETs shows µ significantly higher than 1 cm2/Vs in the temperature range 300K - 100K but, below 180 K, charge transport is still semiconducting-like with E a ~ 70 meV. Rubrene (C42H28) is a molecule comprised of tetracene with four additional phenyl rings attached at the center positions. For crystal synthesis, we used a special batch of high-purity rubrene powder obtained from Aldrich. Crystal growth was achieved by successive runs using the horizontal physical vapor transport method of Laudise et. al. [14] using ultra high purity argon, at a flow rate of 0.5 ml/min. The source temperature was ramped slowly over a time period varying between 6 hours to two days, to the melting point 317 C. At the end of each run, the single crystals were visually examined for low mosaic spread by microscopy in cross-polarizers and the best crystals were recycled three times to further improve purity and crystallinity.FETs were fabricated in a manner similar to our previous work using colloidal graphite source-drain contacts, parylene gate barriers, and silver-paste gate electrodes [9, 11]. Measurements were also performed as in our previous work [9, 11]. The leakage current between the gate electrode and ground was ~10-14-10-13A over most of the gate-source voltage (V gs) range, and never exceeded 3×10-12A. Heat sinking of the leads in the cryostat was achieved by either mechanical clamping to a cooled sapphire block in a vacuum of 10-5 Torr or with 10 Torr pressure 4He exchange gas. Additional thermal sinking is achieved by the three Au leads (2 cm by 50 µm). Thermal cooling between the sample and gate is limited by the parylene layer (100µm × 100µm) and is greater than 10-4 W/K, assuming a parylene thermal conductivity similar to other polymers (≥ 0.01 W/(Km) [15]). At the highest power generated in our sample, we estimate temperature measurement error should not exceed ~2 K at the lowest temperatures. We emphasize that the above considerations address the rubrene lattice temperature and can only be used to bound an estimate of possible hot electron effects, to be discussed below.Fig.1 demonstrates hole-injecting FET current-voltage (I-V) characteristics for a representative device (#6) at both 300K and at 10K. We find at 300K, linearbehavior at small drain-source voltage (V ds) followed by saturation at higher V ds, behavior similar to that seen by other workers [12, 13]. (Sample geometries and room temperature mobilities for our devices are listed in Table 1.) We also find FET-like behavior at 10K in most samples. This behavior is qualitatively different in detail from that at 300K. In particular, the low-V ds behavior demonstrates a voltage threshold and does not fit the usual transport models, e.g. I d varying as V (ohmic), V2 (space charge limited current), or exp(V1/2) (Frenkel-Poole emission). We suspect that the strong super-linear dependence of I d on V ds (< V gs) is due to a combination of 1) contact barrier energy distribution, and 2) V ds-stimulated shallow trap emission. It is also important to account for the role of contact potentials [3, 16] in the high-voltage charge transport. Previous work on rubrene FETs demonstrates that four- and two-terminal measurements yield similar results [8]. In the present experiments, both at 300K and 10K (fig. 1), the dependence of I d on V gs is much stronger than on V ds in the high-voltage limit. This behavior, and the effective saturation of I d on V ds at V ds≥V gs implies that contact potentials do not dominate high voltage transport.Activation energy measurements performed at different values of V gs, as shown in fig. 2, probe the density of deep traps as the Fermi level approaches the valence band [9, 11]. For instance, a gate voltage of –50V decreases E a from ~0.15 eV to 25 meV in the temperature range 270-120K. This latter value of E a is almost 3 times less than reported for rubrene in the temperature range 180-100 K [12] and almost 6 times less than in our pentacene FETs [9]. A smaller E a implies a significantly lower density of deep charge traps in these crystals, and subsequent higher channel conductivity at low temperatures, compared to previous published studies. We associate this higher conductivity with higher purity of our starting materials for crystal growth.In Fig.3, we show I d versus temperature for three different rubrene FETs with data extending to lower temperatures than shown in fig. 2. Different values for E a can result from differences in processing and associated differences in trap densities within the first monolayer of rubrene at the interface to the gate barrier. A common feature to all devices, however, is a marked change in activation energy from E a ~ 25-53 meV, to E a ~ 2-5 meV at temperatures below 50K. Such behavior is often seen in small band gap systems, such as SmB6 and FeSi, and arises from shallow states which become observable after the majority conduction band becomes thermally depopulated [17, 18]. In our devices, parametric gate bias control allows us to probe such states by varying charge density while keeping temperature fixed, as we discuss next.Fig. 4 shows the low temperature dependence of the channel resistivity of rubrene FET device #2 calculated from the measured I d under the assumption of 1 nm channel depth [19] at different values of V gs for V ds = -125V. (Similar data were obtained for two other samples). These data clearly demonstrate gate-electric-field-induced crossover from thermally activated to nearly temperature independent transport as the hole Fermi energy moves toward the valence band [9, 11]. As discussed above, the temperature dependence of the channel resistance at the low-V gs observed in fig. 4 (inset) is due to a modificationof the density of trap states available for thermal excitation. Then, for increasing V gs above ~ -80V, E a falls below the thermal energy, and activated behavior is lost. Indeed, for the high voltages, the resistivity between 2K and 30K cannot be fit with a single E a value.The differential number of injected holes per unit area is given by dN = dV gs C/e, where C is the capacitance per unit areaof the gate-insulator and e is the elementary charge. Therefore the effective hole mobility (µeff) is a function ofV gs and can be calculated from the measured I d(V gs) dependence (see inset of the fig.1): µeff = (dI d/dV gs)Ld par/(ZV dsεε0). Here L is drain-source contact separation, d par is parylene thickness, Z is the contact width, ε = 2.65 is the parylene dielectric constant, and ε0 is the permittivity in vacuum. The mobility calculated for device #6 (fig.4, inset) displays three different regimes of the dependence of µeff on V gs: 1) subthreshold behavior below 35V; 2) exponential increase of thermally activated carriers for 35V < V gs < 65V and; 3) , above 65V, with m ~ 6.5. (Two other samples exhibited this behavior). We discuss this third region below.mgseffV∝µWe consider, below, two distinct transport scenarios that might explain the behavior at low temperature and high voltage. In the first scenario, we assume that all holes injected at the highest values of V gs are in the valence band and free. Under this assumption, one can consider the weak temperature dependence in fig.4 as an approach to degeneracy. The density of free holesin the active channel is thus the differential amount injected by the gate electrode between -86 and -126V. We find the areal density of free holes of ~ 5 × 1011 cm-2. Assuming a channel depth of 1 nm [19], the volume density of free holes is thus 5 × 1018 cm-3 (the rubrene molecular density is 1.5 × 1021 cm-3). The behavior of two-dimensional (2D) fermion gases in high-µ Si MOSFETs is known to be metallic-like (dρ/dT > 0) at these areal densities. However, such behavior is only observed for µ> 4 × 104 cm2/Vs [20], whereas for µeff ~ 0.5 (the highest value obtained here - fig. 4 (inset)), metallic behavior has never been observed. Both insulator-metal (Ioffe-Regel)[21, 22] and insulator-superconductor[23] transition 2D criteria also classify our system as non-†On leave from Ioffe Physical Technical Institute, Russian Academy of Science, Russiametallic. Even if our present system were three-dimensional, the observed value of µeff is too small for metallicity. In bulk P-doped silicon, for example, the limiting low temperature mobility is about 100 cm 2/Vs at the density where the system crosses over from a semiconductor to a degenerate gas [24]. Therefore, it is difficult to reconcile an assumption of free holes with the observed low µeff .References[1] P. Peumans, S. Uchida and S. R. Forrest, Nature 425, 158 (2003). [2] A. R. Volkel, R. A. Street and D. Knipp, Physical Review B 66, 195336 (2002). The second scenario incorporates the breakdown of the thermal activation model and a low µeff at low temperatures and invokes V ds -induced trap emission followed by hopping, quantum tunneling, or hot electron transport. In general, trapped holes can hop or tunnel in real space between traps. The high-V ds fields of ~104 V/cm are most likely large enough to generate emission from trap states that are active at the low temperatures, and both hopping and tunneling can be activated by the shift of the Fermi level to the valence band. Both tunneling and hopping in the gap require a small average distance between traps and therefore a high density of trap states, as is typically observed in molecular compounds in proximity to the valence band [2]. An estimate of this distance obtained from the density of trapped injected carriers in our systems is ~10 nm, making such a mechanism unlikely at present carrier densities. On the other hand, trapped holes can be accelerated into the valence band, providing hot carrier transport between trapping events. Assuming again a 10 nm trap separation, one finds final kinetic energies of order 100K before trapping events. The central question that remains concerns the nature of trap states from which emission occurs. These states pin the Fermi level at low temperatures and the presently accessible voltages. The rapid mobility increase with V gs suggests that such pinning is due to a sharp rise in the density of states near a mobility edge [25].[3] I. H. Campbell and D. L. Smith, Solid State Physics 55, 1 (2001). [4] S. F. Nelson, Y. Y. Lin, D. J. Gundlach, et al., Applied physics letters 72, 1854 (1998). [5] C. Joachim, J. K. Gimzewski and A. Aviram, Nature 408, 541 (2000). [6] A. Nitzan and M. A. Ratner, Science 300, 1384 (2003). [7] W. Warta and N. Karl, Physical Review B 32, 1172 (1985). [8] V. Podzorov, V. M. Pudalov and M. E.Gershenson, Applied physics letters 82, 1739 (2003). [9] V. Y. Butko, X. Chi, D. V. Lang, et al., Appl. Phys. Lett. 83, 4773 (2003).[10] R. W. I. d. Boer, T. M. Klapwijk and A. F. Morpurgo, Appl. Phys. Lett. 83, 4345 (2003).[11] V. Y. Butko, X. Chi and A. P. Ramirez, Solid State Communications 128, 431 (2003).[12] V. Podzorov, E. Menard, A. Borissov, et al., cond-mat/0403575 (2004).[13] R. W. I. d. Boer, M. E. Gershenson, A. F. Morpurgo, et al., cond-mat/0404100 (2004).[14] R. A. Laudise, C. Kloc, P. G. Simpkins, et al., Journal of crystal growth 187, 449 (1998).[15] D. T. Morelli, J. Heremans, M. Sakamoto, et al., Phys. Rev. Lett. 57, 869 (1986).In conclusion, we have shown that lowtemperature charge transport in a rubrene FET exhibits temperature dependence that crosses over from activated at high temperature to almost temperature-independent at 10K. The electric field dependence at the lowest temperatures suggests that trapping dominates charge transport within a hot-electron framework. Further work is needed in improving crystal purity to reduce trap density, and in improving the gate dielectric to increase injected charge density.[16] A. Kahn, N. Koch and W. Y. Gao, Journal of Polymer Science, Part B (Polymer Physics) 41, 2529 (2003).[17] J. C. Cooley, M. C. Aronson, Z. Fisk, et al., Physical Review Letters 74, 1629 (1995).[18] S. Paschen, E. Felder, M. A. Chernikov, et al., Phys. Rev. B 56, 12916 (1997).[19] G. Horowitz, Advanced Functional Materials 13, 53 (2003).[20] E. Abrahams, S. V. Kravchenko and M. P. Sarachik, Reviews of modern physics 73, 251 (2001). We are especially grateful to D. Lang for severaluseful discussions. We also acknowledge helpful discussions with C. M. Varma, R. de Picciotto, C. Kloc, X. Chi, X. Gao, S. Trugman and G. Lawes. We acknowledge support from the Laboratory Directed Research and Development Program at Los Alamos National Laboratory and by the DOE Office of Basic Energy Science. [21] A. F. Ioffe and A. R. Regel, Prog. Semicond. 4, 237 (1960).[22] M. R. Graham, C. J. Adkins, H. Behar, et al., Journal of Physics: Condensed Matter 10, 809 (1998). [23] D. B. Haviland, Y. Liu and A. M. Goldman, Physical Review Letters 62, 2180 (1989).[24]G. L. Pearson and J. Bardeen, Phys. Rev. B 75, 865 (1949). [25] D. V. Lang, X. Chi, T. Siegrist, et al., cond-mat/0312722 (2003).Table 1.Sample L(µm) ±20% Z(µm)±20%d par(µm)±25%µ(cm2/Vs)±30%#1 170 200 0.8 5#2 100 110 1.25 6#4 150 160 0.5 12 (285 K) #6 100 150 1.25 5#12 100 100 1 2.5 #18 150 250 0.8 3 Figure 1. The main parts show room temperature characteristics of the same rubrene single crystal FET at 300 K and 10 K. In the inset to fig. 1(a) is plotted I d versus V gs for the sample #4 with V ds = -51 V, # 6 with V ds = -61 V and # 2 with V ds = -61 V. In the inset to fig.1(b) is plotted I d versus V gs for the sample #12 with V ds = -85 V, # 6 with V ds = -130 V and # 18 with V ds = -70 V. Figure 2. Drain current temperature dependence of rubrene single crystal FET at different gate-source voltages. Inset: Dependence of the thermal activation energy onV gs.Figure 3. Drain current temperature dependence in 3 different rubrene single crystal FETs.Figure 4. Resistivity temperature dependence of rubrene single crystal FET #2 at different gate-source voltages in temperaturerange 30K-2K. In the inset dependence of the mobility on V gs in the sample #6 at 10 K is shown.01x10-52x10-501x10-62x10-6- D r a i n c u r r e n t (A )-V (V)- V ds (V)- D r a i n c u r r e n t (A )0.0020.0040.0060.00810-1110-910-710-510-31/Temperature (1/K)- D r a i n c u r r e n t (A )Figure 2.0.000.020.040.060.080.1010-1010-810-61/Temperature (1/K)- D r a i n c u r r e n t (A )Figure 3.5101520253010-710-3101105109Temperature (K)R e s i s t i v i t y (Ωc m )Figure 1.Figure 4.。

江苏省南通市如皋市2022-2023学年高二上学期期末英语试题(原卷版)

2022-2023学年度高二年级第一学期期末教学质量调研英语试题注意事项：1. 答卷前, 考生务必将自己的姓名、准考证号填写在答题卡上。

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1. What does the man believe will help the environment a lot?A. Eating less meat.B. Growing personal food.C. Getting a good education.2. How old is the man?A. 20.B. 22.C. 30.3. What are the speakers mainly talking about?A. A friend.B. A work problem.C. A sports game.4. Who will be unhappy with the file system?A. Jenny.B. Colin.C. Terry.5. What will the speakers see next?A. The statues.B. The paintings.C. The dinosaur bones.第二节(共15小题;每小题1. 5分, 满分22. 5分)听下面5段对话或独白。

硝酸锂作添加剂对锂硫电池电化学性能的影响

硝酸锂作添加剂对锂硫电池电化学性能的影响熊仕昭谢凯洪晓斌国防科学技术大学航天与材料工程学院材料工程与应用化学系，长沙４１００７３采用充放电测试和交流阻抗测试研究了硝酸锂作电解液添加剂对锂硫电池电化学性能的影响．采用电子扫描显微镜观察分析了添加剂对锂负极的影响，探讨了硝酸锂的作用机理．结果表明，采用硝酸锂作为锂硫电池电解液的添加剂，可以在锂负极表面形成具有钝化负极活性表面及保护锂负极的界面膜．该膜可以抑制电解液中高价态聚硫离子与锂负极的副反应，避免在锂负极表面形成不可逆的硫化锂，从而提高锂硫电池的循环性能和放电容量．采用硝酸锂作添加剂的锂硫电池首次放电比容量达１１７２　ｍＡ·ｈ／ｇ，循环１００次比容量保持为６２９　ｍＡ·ｈ／ｇ．硝酸锂；添加剂；锂负极；界面膜；锂硫电池Ｏ６４６Ａ０２５１－０７９０　（　２０１１　）　１１－２６４５－０５２０１０－１２－０１谢凯，男，博士，教授，博士生导师，主要从事能源材料研究．Ｅ－ｍａｉｌ：　ｘｉｅ＿ｋａｉ＠　ｈｏｔｍａｉｌ．ｃｏｍ比可见，采　，　（Ｆ）　ｉｔｔ　ＬｉＮＯ　．＠＠［１　］Ａｒｍａｎｄ　Ｍ，Ｔａｒａｓｃｏｎ　Ｊ　Ｍ．．　Ｎａｔｕｒｅ［　Ｊ］，２００８，　４５１（７）：　６５２－６５８＠＠［　２］ＨＥ　Ｘｉｎｇ－Ｇｕａｎｇ（和兴广），ＹＡＮＧ　Ｇｕｉ－Ｌｉｎｇ（杨桂玲），ＳＵＮ　Ｌｉ－Ｑｕｎ（孙立群），ＸＩＥ　Ｈａｉ－Ｍｉｎｇ（谢海明），ＷＡＮＧ　Ｒｏｎｇ－　Ｓｈｕｎ（王荣顺）．Ｃｈｅｍ．Ｊ．Ｃｈｉｎｅｓｅ　Ｕｎｉｖｅｒｓｉｔｉｅｓ（高等学校化学学报）［Ｊ］，２０１０，３１（１１）：　２１４８－２１５２＠＠［　３　］Ｌｉａｎｇ　Ｃ．，　Ｄｕｄｎｅｙ　Ｎ．　Ｊ．，　Ｈｏｗｅ　Ｊ．　Ｙ．．　Ｃｈｅｍ．　Ｍａｔｅｒ．［Ｊ］，２００９，　２１（１９）：４７２４－４７３０＠＠［４］　Ｊｉ　Ｘ．，　Ｌｅｅ　Ｋ．　Ｔ．，　Ｎａｚａｒ　Ｌ．　Ｆ．．　Ｎａｔｕｒｅ　Ｍａｔｅｒｉａｌｓ［Ｊ］，２００９，２４６０（１７）：　５００－５０６＠＠［　５　］Ｅｌａｚａｒｉ　Ｒ．，　Ｓａｌｉｔｒａ　Ｇ．　，　Ｔａｌｙｏｓｅｆ　Ｙ．，　Ｇｒｉｎｂｌａｔ　Ｊ．，　Ｋｅｌｌｅｙ　Ｃ．　Ｓ．，　Ｘｉａｏ　Ａ．　，　Ａｆｆｉｎｉｔｏ　Ｊ．，　Ａｕｒｂａｃｈａ　Ｄ．．　Ｊ．　Ｅｌｅｃｔｒｏｃｈｅｍ．　Ｓｏｃ．［　Ｊ］，　２０１０，１５７（１０）　：　Ａ１１３１－Ａ１１３８＠＠［　６　］Ｙａｍｉｎ　Ｈ．　，　Ｇｏｒｅｎｓｈｔｅｉｎ　Ａ．　，　Ｐｅｎｃｉｎｅｒ　Ｊ．　，　Ｓｔｅｒｎｂｅｒｇ　Ｙ．　，　Ｐｅｌｅｄ　Ｅ．．　Ｊ．　Ｅｌｅｃｔｒｏｃｈｅｍ．　Ｓｏｃ．　［　Ｊ　］，　１９８８，　１３５　（５）　：　１０４５－１０４８＠＠［　７　］Ｍｉｋｈａｙｌｉｋ　Ｙ．　Ｖ．，　Ａｋｒｉｄｇｅ　Ｊ．　Ｒ．．　Ｊ．　Ｅｌｅｃｔｒｏｃｈｅｍ．　Ｓｏｃ．　［Ｊ］，　２００３，　１５０（３）　：　Ａ３０６－Ａ３１１＠＠［　８　］Ｋｕｍａｒｅｓａｎ　Ｋ．，　Ｍｉｋｈａｙｌｉｋ　Ｙ．，　Ｗｈｉｔｅ　Ｒ．　Ｅ．．　Ｊ．　Ｅｌｅｃｔｒｏｃｈｅｍ．　Ｓｏｃ．　［Ｊ］，　２００８，　１５５（８）　：　Ａ５７６－Ａ５８２＠＠［　９　］Ｒｙｕａ　Ｈ．　Ｓ．，　ＧｕｏａＺ．，　Ａｈｎ　Ｈ．　Ｊ．，　ＣｈｏＧ．　Ｂ．，　Ｌｉｕ　Ｈ．．　Ｊ．　ＰｏｗｅｒＳｏｕｒｃｅｓ［Ｊ］，２００９，　１８９（２）：　１１７９－１１８３＠＠［　１０］ＹＵＡＮ　Ｋｅ－Ｇｕｏ（苑克国），ＷＡＮＧ　Ａｎ－Ｂａｎｇ（王安邦），ＹＵ　Ｚｈｏｎｇ－Ｂａｏ（余仲宝），ＷＡＮＧ　Ｗｅｉ－Ｋｕｎ（王维坤），ＹＡＮＧ　Ｙｕ－Ｓｈｅｎｇ（杨裕生）．Ｃｈｅｍ．Ｊ．Ｃｈｉｎｅｓｅ　Ｕｎｉｖｅｒｓｉｔｉｅｓ（高等学校化学学报）［Ｊ］，　２００６，　２７（９）：　１７３８－１７４１＠＠［１１］Ｍｉｋｈａｙｌｉｋ　Ｙ．　Ｖ．，　Ａｋｒｉｄｇｅ　Ｊ．　Ｒ．．　Ｊ．　Ｅｌｅｃｔｒｏｃｈｅｍ．　Ｓｏｃ．［Ｊ］，　２００４，　１５１（１１）：　Ａ１９６９－Ａ１９７６＠＠［１２］Ｈａｎ　Ｓ．　Ｃ．，　Ｓｏｎｇ　Ｍ．　Ｓ．，　Ｌｅｅ　Ｈ．，　Ｋｉｍ　Ｈ．　Ｓ．，　Ａｈｎ　Ｈ．　Ｊ．，　Ｌｅｅ　Ｊ．　Ｙ．．　Ｊ．　Ｅｌｅｃｔｒｏｃｈｅｍ．　Ｓｏｃ．［Ｊ］，２００３，　１５０（７）：　Ａ８８９－Ａ８９３＠＠［１３］Ｓｏｎｇ　Ｍ．　Ｓ．，　Ｈａｎ　Ｓ．　Ｃ．，　Ｋｉｍ　Ｈ．　Ｓ．，　Ｋｉｍ　Ｊ．　Ｈ．，　Ｋｉｍ　Ｋ．　Ｔ．，　ＫａｎｇＹ．　Ｍ．，　Ａｈｎ　Ｈ．　Ｊ．，　Ｄｏｕ　Ｓ．　Ｘ．，　Ｌｅｅ　Ｊ．　Ｙ．．　Ｊ．　Ｅｌｅｃｔｒｏｃｈｅｍ．Ｓｏｃ．　［　Ｊ　］，　２００４，　１５１　（６）　：　Ａ７９１　－Ａ７９５＠＠［　１４］　Ｌｅｅ　Ｙ．　Ｍ．，　Ｃｈｏｉ　Ｎ．　Ｓ．，　Ｐａｒｋ　Ｊ．　Ｈ．，　Ｐａｒｋ　Ｊ．　Ｋ．．　Ｊ．　Ｐｏｗｅｒ　Ｓｏｕｒｃｅｓ［Ｊ］，　２００３，　１１９－１２１：９６４－９７２＠＠［　１５］Ｏｔａ　Ｈ．　，　Ａｋａｉ　Ｔ．　，　Ｎａｍｉｔａ　Ｈ．　，　Ｙａｍａｇｕｃｈｉ　Ｓ．　，　Ｎｏｍｕｒａ　Ｍ．．　Ｊ．　Ｐｏｗｅｒ　Ｓｏｕｒｃｅｓ［Ｊ］，　２００３，　１１９－１２１：５６７－５７１＠＠［　１６］　ＴＩＡＮ　Ｌｅｉ－Ｌｅｉ（田雷雷），ＺＨＵＡＮＧ　Ｑｕａｎ－Ｃｈａｏ（庄全超），ＷＡＮＧ　Ｒｏｎｇ（王蓉），ＣＵＩ　Ｙｏｎｇ－Ｌｉ（崔永莉），ＦＡＮＧ　Ｌｉａｎｇ（方亮），ＱＩＡＮＧＹｉｎｇ－Ｈｕａｉ（强颖怀）．Ｃｈｅｍ．Ｊ．Ｃｈｉｎｅｓｅ　Ｕｎｉｖｅｒｓｉｔｉｅｓ（高等学校化学学报）［Ｊ］，　２０１０，　３１（１２）：　２４６８－２４７３＠＠［　１７］Ａｕｒｂａｃｈ　Ｄ．　，　Ｇａｍｏｌｓｋｙ　Ｋ．　，　Ｍａｒｋｏｖｓｋｙ　Ｂ．　，　Ｇｏｆｅｒ　Ｙ．　，　Ｓｃｈｍｉｄｔ　Ｍ．　，　Ｈｅｉｄｅｒ　Ｕ．．　Ｅｌｅｃｔｒｏｃｈｉｍ．　Ａｃｔａ［Ｊ］　，　２００２，　４７（９）　：　１４２３－１４３９＠＠［　１８］Ｃｈｅｏｎ　Ｓ．　Ｅ．，　Ｋｏ　Ｋ．　Ｓ．，　Ｃｈｏ　Ｊ．　Ｈ．，　Ｋｉｍ　Ｓ．　Ｗ．，　Ｃｈｉｎ　Ｅ．　Ｙ．．　Ｊ．　Ｅｌｅｃｔｒｏｃｈｅｍ．　Ｓｏｃ．　［Ｊ］，　２００３，　１５０（６）　：　Ａ８００－Ａ８０５＠＠［１９］Ｌóｐｃｚ　Ｃ．　Ｍ．，　Ｖａｕｇｈｅｙ　Ｊ．　Ｔ．，　Ｄｅｅｓ　Ｄ．　Ｗ．．　Ｊ．　Ｅｌｅｃｔｒｏｃｈｅｍ．　Ｓｏｃ．　［Ｊ］，　２００９，　１５６（９）：　Ａ７２６－Ａ７２９＠＠［２０］Ａｕｒｂａｃｈ　Ｄ．，　Ｐｏｌｌａｋ　Ｅ．，　Ｅｌａｚａｒｉ　Ｒ．，　Ｓａｌｉｔｒａ　Ｇ．，　Ｋｅｌｌｅｙ　Ｃ．　Ｓ．，　Ａｆｆｉｎｉｔｏｂ　Ｊ．．　Ｊ．　Ｅｌｅｃｔｒｏｃｈｅｍ．　Ｓｏｃ．　［Ｊ］，　２００９，　１５６（８）　：　Ａ６９４－Ａ７０２Ｅｆｆｅｃｔ　ｏｆ　ＬｉＮＯ３　ａｓ　Ａｄｄｉｔｉｖｅ　ｏｎ　Ｅｌｅｃｔｒｏｃｈｅｍｉｃａｌ　Ｐｒｏｐｅｒｔｉｅｓ　ｏｆ　Ｌｉｔｈｉｕｍ－ｓｕｌｆｕｒ　ＢａｔｔｅｒｉｅｓＸＩＯＮＧ　Ｓｈｉ－Ｚｈａｏ　ＸＩＥ　ＫａｉＨＯＮＧ　Ｘｉａｏ－Ｂｉｎ硝酸锂作添加剂对锂硫电池电化学性能的影响作者：熊仕昭，谢凯，洪晓斌， XIONG Shi-Zhao， XIE Kai， HONG Xiao-Bin作者单位：国防科学技术大学航天与材料工程学院材料工程与应用化学系,长沙,410073刊名：高等学校化学学报英文刊名：Chemical Journal of Chinese Universities年，卷(期)：2011,32(11)被引用次数：1次1.Armand M;Tarascon J M查看详情[外文期刊] 2008(07)2.和兴广;杨桂玲;孙立群;谢海明王荣顺查看详情 2010(11)3.Liang C;Dudney N J;Howe J Y Hierarchically Structured Sulfur/Carbon Nanocomposite Material for High-Energy Lithium Battery [外文期刊] 2009(19)4.Ji X;Lee K T;Nazar L F查看详情[外文期刊] 2009(17)5.Elazari R;Salitra G;Talyosef Y;Grinblat J Kelley C S Xiao A Affinito J Aurbacha D查看详情 2010(10)6.Yamin H;Gorenshtein A;Penciner J;Sternberg Y Peled E查看详情[外文期刊] 1988(05)7.Mikhaylik Y V;Akridge J R Low Temperature Performance of Li/S Batteries[外文期刊] 2003(03)8.Kumaresan K;Mikhaylik Y;White R E查看详情[外文期刊] 2008(08)9.Ryua H S;GuoaZ;Ahn H J;ChoG B Liu H Investigation Of Discharge Reaction Mechanism Of Lithium|liquid Electrolyte|sulfur Battery[外文期刊] 2009(02)10.苑克国;王安邦;余仲宝;王维坤杨裕生1,3-二氧戊环基LiCF3SO3电解液对锂硫电池正极材料单质硫的电化学性能影响[期刊论文]-高等学校化学学报 2006(09)11.Mikhaylik Y V;Akridge J R Polysulfide Shuttle Study in the li/S Battery System[外文期刊] 2004(11)12.Han S C;Song M S;Lee H;Kim H S Ahn H J Lee J Y Effect of Multiwalled Carbon Nanotubes on Electrochemical Properties of Lithium/Sulfur Rechargeable Batteries[外文期刊] 2003(07)13.Song M S;Han S C;Kim H S;Kim J H Kim K T KangY M Ahn H J Dou S X Lee J Y Effects of Nanosized Adsorbing Material on Electrochemical Properties of Sulfur Cathodes for Li/S Secondary Batteries[外文期刊] 2004(06)14.Lee Y M;Choi N S;Park J H;Park J K查看详情 200315.Ota H;Akai T;Namita H;Yamaguchi S Nomura M查看详情 200316.田雷雷;庄全超;王蓉;崔永莉方亮强颖怀Li2CO3添加剂对石墨电极性能的影响[期刊论文]-高等学校化学学报 2010(12)17.Aurbach D;Gamolsky K;Markovsky B;Gofer Y Schmidt M Heider U A short review of failure mechanisms of lithium metal and lithiated graphite anodes in liquid electrolyte solutions[外文期刊] 2002(09)18.Cheon S E;Ko K S;Cho J H;Kim S W Chin E Y Rechargeable Lithium Sulfur Battery[外文期刊] 2003(06)19.Lópcz C M;Vaughey J T;Dees D W Morphological Transitions on Lithium Metal Anodes[外文期刊] 2009(09)20.Aurbach D;Pollak E;Elazari R;Salitra G Kelley C S Affinitob J On the Surface Chemical Aspects of Very High Energy Density, Rechargeable Li-Sulfur Batteries[外文期刊] 2009(08)引用本文格式：熊仕昭.谢凯.洪晓斌.XIONG Shi-Zhao.XIE Kai.HONG Xiao-Bin硝酸锂作添加剂对锂硫电池电化学性能的影响[期刊论文]-高等学校化学学报 2011(11)。

支链硅油

支链硅油黄文润(中蓝晨光化工研究院,成都610041) 摘要:概述了支链硅油的定义、结构、特性及表征方法;并根据三官能链节(T 链节)的来源,介绍了5种制备支链硅油的方法;最后,介绍了支链硅油在化妆品、防粘隔离剂、低温液力传动油中的应用。

关键词:支链硅油,二甲基硅油,甲基苯基硅油,化妆品,隔离剂中图分类号:TQ 32412+1 文献标识码:B文章编号:1009-4369(2005)01-0036-04收稿日期:2004-02-15。

支链硅油是在线形硅油分子链中引入三官能链节作支化点形成的一类含聚有机硅氧烷支链的液体状聚有机硅氧烷。

近年来支链硅油以其独特的性能受到人们的关注。

以二甲基硅油为例,支链硅油与线形硅油结构的区别如图1所示。

CH 3Si CH 3CH 3OSi CH 3CH 3OnSi CH 3CH 3CH 3线形硅油 CH 3Si CH 3CH 3OSi CH 3XSi CH 3CH 3O Si CH 3CH 3OcSi CH 3CH 3CH 3OaSi CH 3CH 3ObSi CH 3CH 3CH 3X =O ,CH 2CH 2支链硅油图1　线形硅油与支链硅油的结构示意图支链形二甲基硅油分子中的部分甲基用碳官能基、特殊有机基或聚醚链段取代,便可制成各种支链改性硅油。

1　支链硅油的特性及表征111　支链硅油的特性支链硅油由于分子中存在支链结构,其分子链间的缠绕比线形硅油大;故有剪切变稀效应,属非牛顿流体。

例如,对于粘度(25℃,下同)3000mPa ・s 的线形二甲基硅油,其粘度几乎不随剪切力的变化而变化;而支链形二甲基硅油的粘度则随剪切力的增大而变小(见图2)。

这种特性有利于硅油在高剪切体系中的分散及流动。

图2　硅油的粘度与角速度的关系支链结构的存在可抑制硅油在低温下的结晶趋向,使硅油的玻璃化温度降低。

线形二甲基硅技术讲座有机硅材料,2005,19(1):36～39SIL ICON E MA TERIAL 油的倾点一般在-50～-65℃之间;支链形二甲基硅油的倾点可低至-85～-90℃。

IR33说明书

USER INTERFACE
ir33 platform
ir33 ir33 power ir33 DIN powercompact powercompact small mastercella
User manual
User manual
ENGLISH
IMPORTANT WARNINGS
CAREL bases the development of its products on decades of experience in HVAC, on the continuous investments in technological innovations to products, procedures and strict quality processes with in-circuit and functional testing on 100% of its products, and on the most innovative production technology available on the market. CAREL and its subsidiaries nonetheless cannot guarantee that all the aspects of the product and the software included with the product respond to the requirements of the final application, despite the product being developed according to start-of-the-art techniques. The customer (manufacturer, developer or installer of the final equipment) accepts all liability and risk relating to the configuration of the product in order to reach the expected results in relation to the specific final installation and/or equipment. CAREL may, based on specific agreements, acts as a consultant for the positive commissioning of the final unit/application, however in no case does it accept liability for the correct operation of the final equipment/system. The CAREL product is a state-of-the-art product, whose operation is specified in the technical documentation supplied with the product or can be downloaded, even prior to purchase, from the website . Each CAREL product, in relation to its advanced level of technology, requires setup/configuration/ programming/commissioning to be able to operate in the best possible way for the specific application. The failure to complete such operations, which are required/indicated in the user manual, may cause the final product to malfunction; CAREL accepts no liability in such cases. Only qualified personnel may install or carry out technical service on the product. The customer must only use the product in the manner described in the documentation relating to the product. In addition to observing any further warnings described in this manual, the following warnings must be heeded for all CAREL products: • Prevent the electronic circuits from getting wet. Rain, humidity and all types of liquids or condensate contain corrosive

毕业设计外文参考文献

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Streletskii．Deformation of continuous cast metal during rotary rolling[J]．Metallurgist，2005，49(3-4)：97-101．[104] Kazutake Komori，Kouta Mizuno．Study on plastic deformation in cone-type rotary piercing process using model piercing mill for modeling clay[J]．Journal of Materials Processing Technology，2009，209：4994-5001．[105] 李连诗．钢管塑性变形原理(上册)[M]，北京：冶金工业出版社，1985：178-185．[106] 卢于逑．斜轧穿孔过程中应力和变形的分布和中心金属断裂机构的某些特点分析[D]．北京：北京钢铁学院，1963．[107] 卢于逑，王先进．二辊斜轧穿孔时圆坯断面的变形分布和发展[J]．金属学报，1980，16(4)：470-479．[108] 严泽生．现代热轧无缝钢管生产[M]．北京：冶金工业出版社，2009：175-195．[109] Takuda H，Mori K，Hatta N．The application of some criteria for ductile fracture to the prediction of the forming limit of sheet metals[J]．J Mater Process Technol，1999，95：116-121．[110] Takuda H，Mori K，Fujimoto H，et al．Prediction of the forming limit in bore-expanding of sheet metals using ductile fracture criteria[J]．J Mater Process Technol，1999，92-93：433-438．[111] Mori K，Takuda H．Prediction of forming limit in deep drawing of finite element simulation and criterion for ductile fracture[J]．Transaction of NAMRI/SME XXIV，1996，143-148．[112] Takuda H，Mori K，Takakura N，et al．Finite element analysis of limit strains in biaxial stretching of sheet metals allowing for ductile fracture[J]．Int J Mech Sci，2000，42：785-798．。

小学下册O卷英语第6单元期末试卷(有答案)

小学下册英语第6单元期末试卷(有答案)英语试题一、综合题(本题有100小题，每小题1分，共100分.每小题不选、错误，均不给分)1.My grandmother is a ______. She tells me stories from the past.2.What is the capital of Fiji?A. SuvaB. LautokaC. NadiD. Labasa答案:A3. A substance that cannot be broken down into simpler substances is called an ______.4.I wear ______ (太阳镜) on sunny days.5.The chemical formula for potassium dihydrogen phosphate is _____.6.The ________ was a noteworthy event in the evolution of democracy.7.My dog likes to _______ (玩) with a ball.8.The flamingo's color comes from its diet of ______ (甲壳类).9.My _________ (玩具火箭) is ready for launch!10.The discovery of ________ was a significant event in the Age of Exploration.11.Plants are important for __________ (维持生态系统的健康).12.Ice melting is an example of a ______ change.13.The ______ (鲸鱼) is a gentle giant of the ocean.14.The _______ (The Caste System) is a social hierarchy in India.15.The ancient civilization of ________ is known for its scholarly pursuits.16.My friend is very __________ (勤奋的).17.The capital of Indonesia is __________.18.The Earth's tilt affects the changing of the ______.19. A ____(policy advocacy) influences governmental action.20.The ______ (果实) can be red or green.21. A ______ is a pure substance that cannot be broken down.22.小狼) plays with its siblings. The ___23.The chemical symbol for lead is _____ (Pb).24. A solution that has a low concentration of solute is called a ______ solution.25.Read and match.(看图连对话.)26.My sister has a pet _____ that likes to cuddle.27.The atomic structure of an element determines its ______.28.I have a favorite ________ that I always use.29.The _____ (生态平衡) is essential for sustainability.30. A lizard basks in the ______.31.The _______ (The French Revolution) overthrew the monarchy and established a republic.32.I believe in setting ______ (目标) for myself. It helps me stay focused on what I want to achieve.33.My birthday is in ______ (十月).34.What do we call the distance between two points?A. LengthB. WidthC. HeightD. Depth答案: A35.What is the capital of Vietnam?A. Ho Chi Minh CityB. HanoiC. Da NangD. Can Tho答案:B.Hanoi36.The chemical formula for zirconium oxide is ______.37.My sister is _______ (在拍照).38.__________ (可再生资源) are resources that can be replenished naturally.39.The ice cream is ___ (melting) in the sun.40.My ______ loves to dance.41.__________ (化学性质) determine how substances behave in reactions.42.I enjoy _______ (参加) cultural events.43.She is ___ (reading/writing) a letter.44.The _______ (The Age of Exploration) opened new lands for colonization and trade.45.The sun is _______ (setting) in the evening.46. A _______ (海豚) is very intelligent.47.My brother often plays _______ (名词) with his friends. 他觉得这个游戏很_______ (形容词).48. A lion roars fiercely in the _______ as it hunts.49.Listen and number.听录音，给下列图片标号。

BOPET薄膜涂覆改性用水性丙烯酸树脂的合成

第21卷第3期高分子材料科学与工程V o l.21,N o.3　2005年5月POL Y M ER M A T ER I AL S SC IEN CE AND EN G I N EER I N G M ay2005B O PET薄膜涂覆改性用水性丙烯酸树脂的合成Ξ李　娟,白永平(哈尔滨工业大学应用化学系,黑龙江哈尔滨150001)摘要:以甲基丙烯酸甲酯(MM A)、丙烯酸乙酯(EA)为主单体,丙烯酸(AA)为功能性单体,通过溶液聚合方法合成了水性丙烯酸树脂。

研究了丙烯酸含量、单体配比、加料方式、反应温度等条件对树脂性能和涂膜性能的影响,确定了最佳合成工艺。

采用红外光谱(I R)、热失重分析(T GA)等测试手段对树脂的结构和性能进行了表征。

关键词:溶液聚合;水性;丙烯酸树脂;涂料中图分类号:TQ325.7 文献标识码:A 文章编号:100027555(2005)0320110203 双向拉伸聚酯(BO PET)薄膜是一种性能优异的薄膜材料,广泛应用于包装、印刷等领域。

未经改性的BO PET膜表面张力比较低,在使用过程中存在镀铝层或油墨易脱落的现象,无法满足高档包装的要求,故必须对其进行表面改性。

涂覆改性是一种性能稳定,易工业化的方法。

涂覆树脂是这种方法得以实施的关键。

随着环保意识的增强,非溶剂型水性涂料具有更好的竞争性。

迄今为止,用于水性涂料的树脂主要有水性环氧树脂、聚酯树脂、丙烯酸树脂、聚氨酯树脂[1,2]等,其中水性聚丙烯酸树脂具有可设计性强、稳定性好、透明度高、流变性好[3～5]等优点而受到人们的重视。

本文在借鉴前人工作的基础上,设计合成了一种可交联的水性丙烯酸树脂,并首次将其应用于BO PET膜的表面涂覆改性,取得了良好的效果。

1　实验部分1.1　原料甲基丙烯酸甲酯(MM A)、丙烯酸乙酯(EA)、丙烯酸(AA)、乙醇:分析纯试剂;过氧化苯甲酰(B PO):化学纯试剂;所有单体使用前经减压蒸馏精制,B PO使用前先用氯仿溶解、过滤,然后在甲醇中重结晶,反复处理几次后备用。

Eu2+,Cr3+共掺杂SrAl12O19发光体的发光性质及能量传递

Eu2+,Cr3+共掺杂SrAl12O19发光体的发光性质及能量传递钟瑞霞;张家骅;郝振东;张霞;刘自然;齐西伟;李明亚;韩秀梅【摘要】采用高温固相法制备了Eu2+,Cr3+单掺杂及共掺杂的SrAl12O19发光体,研究了它的发光性质和能量传递动力学过程.Eu2+的5d→4f发射峰位于400 nm,与Cr3+位于350～450nm波长范围的4A2→4T1的吸收带有显著的光谱重叠,有利于Eu2+→Cr3+的能量传递发生,从而将来自于Eu2+离子的紫光转换为Cr3+的深红光发射.在共掺杂的样品中,当激发Eu2+时观察到Cr3+离子的2E→4A2红色线谱发射.当监测该红色线谱发射时,激发光谱中包含有Eu2+的吸收,证明了在SrAl12O19体系中Eu2+→Cr3+能量传递的存在.能量传递导致Eu2+的荧光寿命随Cr3+浓度的增加而缩短,计算表明能量传递效率随Cr3+浓度增加而提高,当Cr3+浓度为5%时能量传递效率可达到50%.【期刊名称】《发光学报》【年(卷),期】2010(031)005【总页数】4页(P728-731)【关键词】红色发光粉;能量传递;Eu2+;Cr3+【作者】钟瑞霞;张家骅;郝振东;张霞;刘自然;齐西伟;李明亚;韩秀梅【作者单位】东北大学秦皇岛分校,材料科学与工程系,河北,秦皇岛,066004;中国科学院,长春光学精密机械与物理研究所,激发态物理重点实验室,吉林,长春,130033;中国科学院,长春光学精密机械与物理研究所,激发态物理重点实验室,吉林,长春,130033;中国科学院,长春光学精密机械与物理研究所,激发态物理重点实验室,吉林,长春,130033;东北大学秦皇岛分校,自动化系,河北,秦皇岛,066004;东北大学秦皇岛分校,材料科学与工程系,河北,秦皇岛,066004;东北大学秦皇岛分校,材料科学与工程系,河北,秦皇岛,066004;东北大学秦皇岛分校,材料科学与工程系,河北,秦皇岛,066004【正文语种】中文【中图分类】O482.31随着三基色照明和显示的发展,蓝色和绿色发光粉性能较好,基本满足实用需求。

异常降温英文作文

异常降温英文作文英文回答：An abnormal cold snap, also known as a cold wave or winter storm, is a period of unusually low temperaturesthat can cause widespread disruption and life-threatening conditions. Cold snaps can occur in any part of the world, but they are most common in temperate regions during the winter months.There are a number of factors that can contribute to an abnormal cold snap, including:Arctic air masses: Cold snaps are often caused by the southward movement of cold air from the Arctic. These air masses can become trapped over a region for several days, leading to prolonged periods of cold weather.High pressure systems: High pressure systems can trap cold air in a region by preventing warm air from moving in.This can lead to a gradual build-up of cold temperatures over a period of days or weeks.Snow cover: Snow cover can reflect sunlight and insulate the ground, which can further contribute to cold temperatures.Wind chill: Wind can make cold temperatures feel even colder by removing heat from the body.Abnormal cold snaps can have a number of negative impacts, including:Health risks: Cold snaps can lead to hypothermia, frostbite, and other cold-related injuries. These injuries can be life-threatening, especially for vulnerable populations such as the elderly and young children.Transportation disruptions: Cold snaps can make roads and airports impassible, leading to delays and cancellations. This can disrupt travel plans and business operations.Power outages: Cold snaps can put a strain on the electrical grid, leading to power outages. This can disrupt essential services such as heating, lighting, and communication.Economic losses: Cold snaps can damage crops, livestock, and infrastructure. This can lead to economic losses for businesses and individuals.There are a number of things that can be done toprepare for and mitigate the impacts of abnormal cold snaps, including:Stay informed: Monitor weather forecasts and warnings for information about upcoming cold snaps.Dress warmly: Wear layers of loose-fitting clothing to help insulate your body. Cover your head, hands, and feetto protect yourself from the cold.Stay hydrated: Drink plenty of fluids to preventdehydration.Avoid strenuous activity: Strenuous activity can make you sweat, which can lead to hypothermia.Seek shelter: If you are caught outside in a cold snap, seek shelter in a warm place. This could be a home, business, or public building.Check on vulnerable populations: Check on elderly neighbors, family members, and others who may be at riskfor cold-related injuries.By following these tips, you can help to stay safe and warm during an abnormal cold snap.中文回答：异常降温。

小学上册U卷英语第六单元综合卷

小学上册英语第六单元综合卷英语试题一、综合题(本题有100小题，每小题1分，共100分.每小题不选、错误，均不给分)1.What is the main ingredient in bread?A. FlourB. SugarC. WaterD. Salt2.How many legs does an octopus have?A. SixB. EightC. TenD. TwelveB Eight3.The _____ (computer/tablet) is on sale.4.How many months are there in a year?A. 10B. 12C. 14D. 115.The seagull flies over the _________. (海洋)6.Weathering can occur physically or ______.7.I love to go ______ (远足) in the mountains during the fall to see the colorful leaves.8.My grandma enjoys making ____ (candies).9.The _______ can help inspire creativity in children.10.My _____ (花坛) is full of blooming flowers.11. A ________ (地下河) is a river that flows beneath the ground.12.In a chemical reaction, the total mass of the reactants equals the total mass of the_____.13.Where do fish live?A. TreesB. WaterC. AirD. LandB14.The __________ (历史的叙述) tells our story.15.htenment emphasized ________ (理性和科学). The Enli16.What is the main ingredient in pesto sauce?A. BasilB. ParsleyC. CilantroD. Thyme17.What is the name of the famous statue in New York Harbor?A. Christ the RedeemerB. DavidC. Statue of LibertyD. Venus de MiloC18.The book is very ______ (interesting).19. A chemical that can act as an acid or base is called ______.20. A mixture that contains two or more phases is called a _______ mixture.21.The chemical formula for manganese oxide is _______.22.I enjoy ______ (画画) during my free time.23.The boiling point of water is higher at _____ altitudes.24.I saw a ________ in the grass today.25.I want to _____ (write) a letter.26.The dog is _______ (在跑) in the yard.27. A ______ is a cold-blooded animal.28.An extinct volcano is one that is unlikely to ______ again.29.What is the term for a person who studies ancient cultures?A. ArchaeologistB. HistorianC. AnthropologistD. SociologistA30.The ancient Romans are distinguished for their ________ and governance.31.The baby is ______ her bottle. (drinking)32.The clock is ________ ticking.33.I saw a _____ (小猫) playing with a ball of yarn.34. A solid has a definite shape and _____.35.What color do you get when you mix red and white?A. PinkB. PurpleC. BlueD. GreenA36.My favorite singer is __________ (歌手) and I love her songs.37.Which country is known as the Land of the Rising Sun?A. ChinaB. JapanC. KoreaD. ThailandB38.The color of a flower can sometimes indicate its ______. (花的颜色有时可以指示其适应性。

翟琨个人简介

翟琨个人简介一、基本情况翟琨，女，1978年4月出生，辽宁沈阳人，汉族，中共党员，教授，博士，主要从事环境科学的教学工作和土壤环境化学的研究工作。

二、学习工作简历1998年毕业于沈阳大学，2005年毕业于贵州大学，获硕士学位，2015年毕业于华中农业大学，获博士学位。

1998年至2002年任职于辽中农业局，2005年至今任职于湖北民族学院化学与环境工程学院。

三、主持的主要科研项目1、恩施蔬菜地土壤重金属污染健康风险评价研究，湖北省教育厅重点项目，主持，2013-2014，已结题。

2、基于GIS的鄂西南旱地土壤质量时空演变及可持续利用评价的研究，湖北省教育厅科研项目，主持，2007-2009已结题。

2、以“地方本科高校转型”为背景的地方民族院校应用型人才培养模式改革研究，湖北省教育厅，主持，2016-2017，在研。

四、主要科研成果1．Kun Z, Liu YH, Xiang DS, Guo GG, Wan TY, Hu HQ. Dual Color Fluorescence Quantitative Detection for Mercury in Soil with Graphene Oxide and Dye-labeled Nucleic Acids. Analytical Method, 2015, 7(9): 1-7.2．翟琨，向东山，朱俊，胡红青．基于分子信标及核酸染料SYBRGreen_定量检测土壤中的汞，分析化学，2015，43(8)：1125-1129．3. 翟琨, 向东山，殷艳，范然．EDTA对Cu污染农田土壤的淋洗实验研究．土壤通报，2015，46(5)：1108-1113．4. 翟琨, 王联芝，向东山．双色荧光定量检测大米中的汞，2015，36(2): 179-183.吴德勇个人简历一、基本情况吴德勇，男，1981年8月生，湖北利川人，博士，副教授，硕士生导师。

主要从事环境功能材料和环境生态保护研究，主持科技部、国家民委、湖北省科技厅、湖北省教育厅自然科学基金多项，以第一作者或者通讯作者发表SCI收录论文17篇。

科勒阀芯安装和维护说明书

WARNING: Risk of scalding. High water temperature can cause severe burns. Set the water temperature at or below 120°F (49°C) following the adjustment procedure in thevalve Installation and Care Guide.WARNING: Risk of property damage. Do not crush, cut,or expose batteries to sunlight, ﬁre, or other forms ofexcessive heat.WARNING: Risk of property damage. Do not exposebatteries to extremely low air pressure.WARNING: Risk of property damage. Do not exposethis device to sunlight, fire or similar excessive heat ofthe environment.Installation Instructions1419524-T2-C ©2021 Kohler Co.IMPORTANT INSTRUCTIONS重要说明安装说明书警告：烫伤危险。

水温过高会导致严重烧伤。

请按照阀芯安装和维护说明中的调整步骤，将水温设置为或低于49°C。

警告：财产损失风险。

切勿挤压、切割或将电池置于阳光、火源或其它过热环境中。

警告：财产损失风险。

切勿将电池置于极低气压下。

NOTE: If charging with a power adapter, please make sure topurchase the adapter that is CCC certified and meets thestandard requirements.注意：消费者若适用电源适配器充电，则应购买配套使用获得CCC认证并满足标准要求的适配器。

小学下册C卷英语第二单元真题(有答案)

小学下册英语第二单元真题(有答案)英语试题一、综合题(本题有100小题，每小题1分，共100分.每小题不选、错误，均不给分)1.What is the opposite of "fast"?A. SlowB. SmallC. HighD. Long答案:A Slow2.Einstein's theory of relativity changed our understanding of ______.3.The kitten is ___. (curious)4.The fish are swimming in the ___ (tank/aquarium).5.The _____ (游泳池) is refreshing.6.The _____ of a star is how far it is from Earth.7.The chemical formula for cadmium sulfide is _____.8. A __________ reaction releases energy in the form of heat.9.My favorite sport is ______ (滑雪).10.The _____ (car/bike) is fast.11.The __________ (水源) is vital for all plant life.12.My cousin is my best _______ who is always there for me.13.What is the opposite of "high"?A. LowB. TallC. SmallD. Wide答案:A Low14.The __________ (航线) connects different countries.15.We like to listen to ___. (music)16.I love _______ (去野餐) in the summer.17. A _______ is a process that occurs in nature.18.The process of ______ can lead to the creation of new habitats.19.rain gauge) measures precipitation. The ____20.I want to ___ (go/visit) the zoo.21.Some plants have _______ that protect them from animals.22.My aunt enjoys going to ____ (theater) shows.23.The baby is ___ (crying/laughing).24.My dog wags its _________ when happy. (尾巴)25.Read and choose.(看图选择。

小学上册G卷英语第3单元综合卷(有答案)

小学上册英语第3单元综合卷(有答案)英语试题一、综合题(本题有100小题，每小题1分，共100分.每小题不选、错误，均不给分)1.The flowers smell _____ (good/bad).2.The largest land animal is the __________.3.The assassination of Archduke Franz Ferdinand led to ________ War I.4.What do we call the area of land that is covered by grass?A. GrasslandB. PrairieC. SavannaD. All of the above答案: D. All of the above5.What is the capital of the Netherlands?A. AmsterdamB. RotterdamC. UtrechtD. The Hague答案:A6.The clock says it is ________ (三点).7.What do we call the lines on a map that run east to west?A. LatitudeB. LongitudeC. EquatorD. Prime Meridian答案:A8.The ________ was a symbol of freedom and democracy.9.The flowers smell ________.10.What is the opposite of "happy"?A. SadB. ExcitedC. AngryD. Sleepy答案:A Sad11.We have ___ (ice cream/cake) for dessert.12.Sound waves can travel through ______ (water).13.What is the color of the sky on a clear day?A. GreenB. BlueC. RedD. Yellow答案: B14.Cleopatra was the last pharaoh of _____.15.I enjoy _______ (收集) stickers from my travels.16.The chemical symbol for sodium is _______.17.I can play with my ________ (玩具类型) anywhere.18.The _____ (蜗牛) carries its house on its back.19.The ________ (生态研究机构) contributes valuable insights.20.What do you call the person who flies an airplane?A. CaptainB. PilotC. DriverD. Sailor答案: B21. A _______ is a tool used to measure the weight of an object.22. A _____ (植物探索活动) can spark interest in botany.23.Which animal is known for its ability to fly?A. RabbitB. ElephantC. BirdD. Fish答案: C. Bird24.The ______ teaches us about ethics.25.选择合适的选项,补全对话。

温度不同原因英语作文

温度不同原因英语作文When discussing the reasons behind different temperatures, we can explore a variety of factors that contribute to the variations in climate and weather conditions around the world. Here's a composition on the topic:The Varied Reasons Behind Temperature DifferencesTemperature is a fundamental aspect of our environment that affects both the natural world and human activities. TheEarth's climate is a complex system, and the temperatures we experience are the result of numerous interrelated factors.Geographical LocationThe most apparent reason for temperature differences is geographical location. The Earth is a sphere, and itscurvature means that different parts of the planet receive sunlight at different angles. Areas closer to the equator receive more direct sunlight, leading to higher temperatures, while regions near the poles receive sunlight at a moreoblique angle, resulting in colder temperatures.AltitudeAnother significant factor is altitude. As elevationincreases, the air becomes thinner and holds less heat, causing temperatures to decrease. Mountainous regions and high plateaus often have cooler climates compared to low-lying areas.Ocean CurrentsOcean currents play a crucial role in distributing heat around the globe. Warm currents, such as the Gulf Stream, transport heat from the tropics to higher latitudes, moderating the climate of coastal regions. Conversely, cold currents can lower the temperature of nearby landmasses.Atmospheric ConditionsThe composition of the atmosphere itself can influence temperature. The presence of greenhouse gases, such as carbon dioxide, traps heat and leads to a warming effect known as the greenhouse effect. Conversely, the depletion of the ozone layer can lead to cooling in certain regions.Human ActivitiesHuman activities have a substantial impact on global temperatures. Industrialization, deforestation, and urbanization contribute to the release of greenhouse gases, which in turn leads to global warming. Additionally, the urban heat island effect, where cities are significantly warmer than their rural surroundings due to human-made structures and activities, is a notable phenomenon.Seasonal ChangesSeasonal variations also cause temperature differences. As the Earth orbits the Sun, the tilt of its axis means that different parts of the world receive varying amounts of sunlight throughout the year, leading to the distinct seasons of spring, summer, autumn, and winter.ConclusionUnderstanding the reasons behind temperature differences is essential for predicting and adapting to climate change. By recognizing the role of geographical location, altitude, ocean currents, atmospheric conditions, human activities, and seasonal changes, we can better appreciate the complexity of our planet's climate system and work towards sustainable solutions.This composition provides a comprehensive overview of the factors that lead to different temperatures around the world, suitable for an English language class focusing on environmental science or geography.。

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