Contact superconformal algebras and their representations

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共轭聚合物 有机半导体 英文

共轭聚合物 有机半导体 英文

共轭聚合物有机半导体英文英文回答:Conjugated polymers are a class of organic semiconductors that have alternating single and double bonds along their backbone. This unique structure gives conjugated polymers interesting electrical and optical properties, making them promising candidates for use in various electronic applications.Conjugated polymers are typically synthesized via chemical polymerization techniques, such as oxidative coupling or Heck reaction. The resulting polymers are typically soluble in organic solvents and can be processed into thin films using techniques such as spin coating or drop casting.The electrical properties of conjugated polymers are highly dependent on the degree of conjugation, which is the length of the alternating single and double bond sequence.Longer conjugation lengths lead to higher charge carrier mobility and lower bandgap, making the polymer more conductive and semiconducting, respectively.The optical properties of conjugated polymers are also affected by the degree of conjugation. Longer conjugation lengths lead to absorption and emission of light at longer wavelengths, resulting in a red shift in the polymer's absorption and emission spectra.Conjugated polymers have been used in a variety of electronic applications, including organic solar cells, organic light-emitting diodes (OLEDs), and transistors. In organic solar cells, conjugated polymers act as the active layer, absorbing light and generating charge carriers that are then collected by the electrodes. In OLEDs, conjugated polymers are used as the emitting layer, emitting light when an electric current is applied. In transistors, conjugated polymers are used as the semiconductor channel, controlling the flow of current between the source and drain electrodes.Conjugated polymers are a promising class of materials for use in electronic applications due to their unique electrical and optical properties. Further research is needed to improve the performance and stability of conjugated polymers, but they have the potential to revolutionize the field of electronics.中文回答:共轭聚合物是有机半导体的一种,其主链上交替排列着单键和双键。

光子晶体水凝胶的英文

光子晶体水凝胶的英文

光子晶体水凝胶的英文Photonic crystal hydrogels are pretty cool materials. They're like the combo of two amazing things: photonics and hydrogels. You know, photonics deals with light and its interaction with matter, while hydrogels are those super-absorbent polymers that can hold a lot of water.When you put them together, you get something that can manipulate light in a really unique way. Imagine being able to control how light passes through a material just by changing its water content. That's what photonic crystal hydrogels allow you to do.These materials are also really responsive. They can change their properties based on external stimuli like temperature or pH. So, not only can you control light, but you can also make the material respond to its environment.Photonic crystal hydrogels are super versatile, too. You can use them in sensors to detect chemicals or indisplays that change color based on some input. The possibilities are endless!Plus, they're just so fascinating to look at. The way the light dances through the crystal structure is like a mini light show. It's like nature's own version of a laser light display, but much more subtle and elegant.In a nutshell, photonic crystal hydrogels are a marriage of science and beauty. They're not just useful materials; they're also a visual treat. Who knows, maybe one day we'll see them everywhere, from our smartphones to our homes, adding a bit of magic to our daily lives.。

非线性动态方法评估重合钢筋建筑的地震抗性说明书

非线性动态方法评估重合钢筋建筑的地震抗性说明书

7th International Conference on Mechatronics, Control and Materials (ICMCM 2016)Assessment of seismic resistance of the reinforced concrete buildingby nonlinear dynamic methodOleg Vartanovich Mkrtychev1, Marina Sergeevna Busalova2*1Head of the Research laboratory “Safety and Seismic Resistance of Structures” Professor of theDepartment “Strength of Materials”Moscow State University of Civil Engineering (National Research University) 26, YaroslavskoeShosse, Moscow, Russia2Engineer of the Research laboratory “Safety and Seismic Resistance of Structures” Moscow State University of Civil Engineering (National Research University) 26, Yaroslavskoe Shosse, Moscow,Russia**************************Keywords:direct dynamic method, non-linearity, seismic impact, reinforced concrete structures, near-collapse criterion.Abstract.The article studies the reaction of the 5-storey reinforced concrete building of the cross-sectional wall structural scheme to the seismic impact. Bearing structures of the building were simulated by the three-dimensional finite elements, connecting concrete and reinforcement, in the software application LS-DYNA. The calculation was carried out by the direct dynamic method using the directly integrated equation of motion according to the explicit scheme. Using this method for calculation allows to make calculations in the temporary area and also to take into account the nonlinearities in the analytic model. In particular, the physical non-linearity is taken into account by means of the non-linear diagram of the concrete deformation. To create an adequate analytic-dynamic model the authors of the article developed the method allowing to take into account the actual reinforcement of the structure. The research conducted allows to estimate the reaction of the 5-storey reinforced concrete building to the set seismic impact.IntroductionThe base of the edition of SP 14.13330.2014 SNiP II-7-81* “Construction in Seismic Regions” [1] acting since 2015 takes the requirements of the two-level calculation of the seismic impact. The earthquake analysis corresponding to the level of the maximal design earthquake shall be performed according to the near-collapse criterion. It means that the calculation methods shall directly take into account the non-linear character of the structural deformation (physical, geometrical, structural non-linearities). However, now in Russia the corresponding method and verified dynamic model allowing to make calculations at the level of maximal design earthquake are not available. The authors of the article developed the method allowing to take into account the non-linear properties of concrete when making calculations of seismic impact, and also to include the elements of the connection of concrete and reinforcement into the analytical model taking into account the actual reinforcement of the structure.Setting of problemConcrete is a complicated composite material that consists mostly of the filling and the grouting, and at the different impacts its reaction can vary from brittle fracture at tensioning to yield behavior at compression. Non-linear diagram of concrete deformation taking into account the physical non-linearity is shown in the Figure 1 [2].Figure 1. Non-linear diagram of concrete deformationTo solve the problem it is necessary to have a corresponding material model. The Figure 2 shows the most complete models describing adequately the work of concrete at deformation (CSCM – Continuous Surface Cap Model) [3].Figure 2. Mathematical model of concrete (CSCM – Continuous Surface Cap Model) Concrete yield surface is described by the invariants of the stress tensor that in turn are determined from the formula (1)-(3).13J P=(1)212ij ijJ S S′=(2)313ij jk kiJ S S S′=(3)where1J is the first invariant of the stress tensor, 2J′ is the second invariant of the stress tensor, 3J′is the third invariant of the stress tensor,ijS is stress tensor, P is pressure.To study the actual reaction of the structure to the seismic impact it will not be sufficient to take into account the nonlinear properties of the concrete only. To show the real picture of thedeformation it is necessary to include the actual reinforcement into the analytic dynamic model, that is, to simulate the reinforcement cage of the building under analysis in the structural design [4].The Figure 3 shows the structural design of the five-storey reinforced concrete building of the cross-sectional wall structural scheme. All bearing structures are simulated by the three dimensional elements for concrete and bar elements for reinforcement [5].Figure 3. Structural design The Figure 4 shows the reinforcement cages of the building.Figure 4. Reinforcement cageCalculation resultsCalculation was made by the software application LS-DYNA by the direct dynamic method [6]. Equations of motion (4) were integrated directly according to the explicit scheme (5):a ++=Mu Cu Ku f (4)where u is nodal displacement vector, =uv is nodal velocity vector, =u a is nodal acceleration vector, M is mass matrix, C is damping matrix, K is rigidity matrix, af is vector of applied loads. /22t t t t t t t t t t +∆+∆+∆∆+∆=+u u v (5)This method allows to take into account the geometrical, physical and structural nonlinearities andalso to make calculations in the temporary area (dynamics in time).Three-component diagram was used as a design seismic impact corresponding to the intensity 9 earthquake (Figure 5). a)b)c)Figure 5. Three-component accelerograma)component X, b) component Y, c) component ZIsofields of the plastic deformations after the earthquake (t = 30 s) are shown in the Figure 6. Figure 6. Isofields of the plastic deformations after the earthquake at the moment of time t = 30 s The character of the plastic deformations corresponds completely to the character of cracks distribution. The Figure 6 shows that the bearing structures of the building of this structural scheme were damaged seriously but the building did not collapse, that means the conditions of the special limit state (near-collapse criterion) are satisfied. As a result of the conducted research, the seismic resistance of the building according to the near-collapse criterion was determined as intensity 9.ConclusionsThe analysis of the data obtained as a result of the research allows to conclude that for the adequate estimation of the reaction of the structure to the seismic impact it is necessary to make calculations in the nonlinear dynamic arrangement taking into account the nonlinear diagrams of concrete deformation and also to add the actual reinforcement into the structural design. The use of the offered method of the buildings earthquake calculations at the design stage will allow to estimate adequately the level of seismic resistance of the building structures.AcknowledgementsThis study was performed with the support of RF Ministry of Education and Science, grant No.7.2122.2014/K.References[1].SP 14.13330.2014 SNIP II-7-81. Stroitel'stvo v seysmicheskikh rayonakh[SP 14.13330.2014SNIP II-7-81. Construction in Seismic Areas]. (2014). Moscow: Analitik.[2].SP 63.13330.2012 SNIP 52-01-2003. Betonnye i zhelezobetonnye konstruktsii. Osnovnyepolozheniya[SP 63.13330.2012 SNIP 52-01-2003. Concrete and Reinforced Concrete Structures. Summary]. (2012). Moscow: Analitik.[3].Murray, Y.D. (2007). Users Manual for LS-DYNA Concrete Material Model 159. Report No.FHWA-HRT-05-062. U.S. Department of Transportation: Federal Highway Administration. [4].Murray, Y.D. (2007). Evaluation of LS-DYNA Concrete Material Model 159. Publication No.FHWA-HRT-05-063. U.S. Department of Transportation: Federal Highway Administration. [5].LS-DYNA. (n.d.). Keyword User’s Manual(Vol. 1, 2). Livermore Software TechnologyCorporation (LSTC).[6].Andreev, V.I., Mkrtychev, O.V., & Dzinchvelashvili, G.A. (2014). Calculation of Long SpanStructures to Seismic and Accidental Impacts in Nonlinear Dynamic Formulation. Applied Mechanics and Materials, 670-671, 764-768。

Lie algebras, in Infinite-dimensional Lie algebras and groups, Adv. Ser. in Math. Phys. 7,

Lie algebras, in Infinite-dimensional Lie algebras and groups, Adv. Ser. in Math. Phys. 7,
L1;k (1)
C1;1;k g ' L0;k (0)
L1;k (1)
M1;k (1): Combining Theorem 4.6 and the statement (ii), we obtain the statement (i). Q.E.D.
References
H0 (g(0; 1; 1); L0 ;k (0)
Department of Mathematics, Faculty of Science, Kyoto University, Kyoto 606-8502, Japan. Department of Mathematics, Faculty of Science, Osaka University,
[KK] Kac V.G. and Kazhdan D.A., Structure of representations with highest weight of in nite dimensional Lie algebras, Adv. in Math. 34, (1979), 97{108. [KnPZ] Knizhnik V. G., Polyakov A. M. and Zamolodchikov A.B., Fractal structure in 2D quantum gravity, Mod. Phys. Lett. A 3, (1988), 819{826. [KW1] Kac V.G. and Wakimoto M., Modular invariant representations of in nite dimensional Lie algebras and superalgebras, Proc. Natl. Acad. Soc., 35, (1988), 4956{4960. [KW2] Kac V.G. and Wakimoto M., Classi cation of modular invariant representations of ane Lie algebras, in In nite-dimensional Lie algebras and groups, Adv. Ser. in Math. Phys. 7, (1989), 138{177. [KWn] Kac V. G. and Wang W., Vertex operator superalgebras and their representations, Mathematical aspects of conformal and topological eld theories and quantum groups, 161{191, Contemp. Math. 175, Amer. Math. Soc. Providence, RI, (1994). [Mal] Malikov F.G., Verma modules over Kac-Moody algebras of rank 2, Leningrad Math. J., 2, No. 2, (1991), 269{286. [MFF] Malikov F.G., Feigin B.L. and Fuks D.B., Singular vectors in Verma modules over KacMoody algebras, Funkts. Anal. Prilozhen., 20, No. 2, (1988), 25{37. [MW] Mathieu P. and Walton M.A., Fractional-level Kac-Moody Algebras and Nonunitary Coset Conformal Theories, Prog. Theor. Phys. 102, (1990), 229-254. [MP] Moody R.V. and Pianzola A., Lie algebras with triangular decompositions, Wiley-Interscience Publ., New York, 1995. [P] Polyakov A. M., Quantum Gravity in two dimensions, Mod. Phys. Lett. A 2, (1987), 893-898. [Ray] Ray U., A Characterization of Lie superalgebras for a certain class of graded Lie superalgebras, preprint,to appear in Jour. Alg. [RW] Rocha-Caridi A. and Wallach N.R., Highest weight modules over graded Lie algebras: resolutions, ltrations and character formulas, Trans. Amer. Math. Soc. 20, (1983), 133{162. [TUY] Tsuchiya A., Ueno K. and Yamada Y., Conformal eld theory on moduli family of stable curves with gauge symmetry, in Integrable systems in quantum eld theory and statistical mechanics, Adv. Stud. Pure Math. 19, (1989), 459-566. [V] Verlinde E., Fusion rules and modular transformations in 2D conformal eld theory, Nucl. Phys. B 300, (1998), 360-376. (K. Iohara) (Y. Koga)

单分子综述-NATURE NANOTECHNOLOGY-Single-molecule junctions beyond electronic transport-2013

单分子综述-NATURE NANOTECHNOLOGY-Single-molecule junctions beyond electronic transport-2013

Stimulated by the initial proposal that molecules could be used as the functional building blocks in electronic devices 1, researchers around the world have been probing transport phenomena at the single-molecule level both experimentally and theoretically 2–11. Recent experimental advances include the demonstration of conductance switching 12–16, rectification 17–21, and illustrations on how quantum interference effects 22–26 play a critical role in the electronic properties of single metal–molecule–metal junctions. The focus of these experiments has been to both provide a fundamental understanding of transport phenomena in nanoscale devices as well as to demonstrate the engineering of functionality from rational chemical design in single-molecule junctions. Although so far there are no ‘molecular electronics’ devices manufactured commercially, basic research in this area has advanced significantly. Specifically, the drive to create functional molecular devices has pushed the frontiers of both measurement capabilities and our fundamental understanding of varied physi-cal phenomena at the single-molecule level, including mechan-ics, thermoelectrics, optoelectronics and spintronics in addition to electronic transport characterizations. Metal–molecule–metal junctions thus represent a powerful template for understanding and controlling these physical and chemical properties at the atomic- and molecular-length scales. I n this realm, molecular devices have atomically defined precision that is beyond what is achievable at present with quantum dots. Combined with the vast toolkit afforded by rational molecular design 27, these techniques hold a significant promise towards the development of actual devices that can transduce a variety of physical stimuli, beyond their proposed utility as electronic elements 28.n this Review we discuss recent measurements of physi-cal properties of single metal–molecule–metal junctions that go beyond electronic transport characterizations (Fig. 1). We present insights into experimental investigations of single-molecule junc-tions under different stimuli: mechanical force, optical illumina-tion and thermal gradients. We then review recent progress in spin- and quantum interference-based phenomena in molecular devices. I n what follows, we discuss the emerging experimentalSingle-molecule junctions beyond electronic transportSriharsha V. Aradhya and Latha Venkataraman*The id ea of using ind ivid ual molecules as active electronic components provid ed the impetus to d evelop a variety of experimental platforms to probe their electronic transport properties. Among these, single-molecule junctions in a metal–molecule–metal motif have contributed significantly to our fundamental understanding of the principles required to realize molecular-scale electronic components from resistive wires to reversible switches. The success of these techniques and the growing interest of other disciplines in single-molecule-level characterization are prompting new approaches to investigate metal–molecule–metal junctions with multiple probes. Going beyond electronic transport characterization, these new studies are highlighting both the fundamental and applied aspects of mechanical, optical and thermoelectric properties at the atomic and molecular scales. Furthermore, experimental demonstrations of quantum interference and manipulation of electronic and nuclear spins in single-molecule circuits are heralding new device concepts with no classical analogues. In this Review, we present the emerging methods being used to interrogate multiple properties in single molecule-based devices, detail how these measurements have advanced our understanding of the structure–function relationships in molecular junctions, and discuss the potential for future research and applications.methods, focusing on the scientific significance of investigations enabled by these methods, and their potential for future scientific and technological progress. The details and comparisons of the dif-ferent experimental platforms used for electronic transport char-acterization of single-molecule junctions can be found in ref. 29. Together, these varied investigations underscore the importance of single-molecule junctions in current and future research aimed at understanding and controlling a variety of physical interactions at the atomic- and molecular-length scale.Structure–function correlations using mechanicsMeasurements of electronic properties of nanoscale and molecu-lar junctions do not, in general, provide direct structural informa-tion about the junction. Direct imaging with atomic resolution as demonstrated by Ohnishi et al.30 for monoatomic Au wires can be used to correlate structure with electronic properties, however this has not proved feasible for investigating metal–molecule–metal junctions in which carbon-based organic molecules are used. Simultaneous mechanical and electronic measurements provide an alternate method to address questions relating to the struc-ture of atomic-size junctions 31. Specifically, the measurements of forces across single metal–molecule–metal junctions and of metal point contacts provide independent mechanical information, which can be used to: (1) relate junction structure to conduct-ance, (2) quantify bonding at the molecular scale, and (3) provide a mechanical ‘knob’ that can be used to control transport through nanoscale devices. The first simultaneous measurements of force and conductance in nanoscale junctions were carried out for Au point contacts by Rubio et al.32, where it was shown that the force data was unambiguously correlated to the quantized changes in conductance. Using a conducting atomic force microscope (AFM) set-up, Tao and coworkers 33 demonstrated simultaneous force and conductance measurements on Au metal–molecule–metal junc-tions; these experiments were performed at room temperature in a solution of molecules, analogous to the scanning tunnelling microscope (STM)-based break-junction scheme 8 that has now been widely adopted to perform conductance measurements.Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA. *e-mail: lv2117@DOI: 10.1038/NNANO.2013.91These initial experiments relied on the so-called static mode of AFM-based force spectroscopy, where the force on the canti-lever is monitored as a function of junction elongation. I n this method the deflection of the AFM cantilever is directly related to the force on the junction by Hooke’s law (force = cantilever stiff-ness × cantilever deflection). Concurrently, advances in dynamic force spectroscopy — particularly the introduction of the ‘q-Plus’ configuration 34 that utilizes a very stiff tuning fork as a force sen-sor — are enabling high-resolution measurements of atomic-size junctions. In this technique, the frequency shift of an AFM cantilever under forced near-resonance oscillation is measuredas a function of junction elongation. This frequency shift can be related to the gradient of the tip–sample force. The underlying advantage of this approach is that frequency-domain measure-ments of high-Q resonators is significantly easier to carry out with high precision. However, in contrast to the static mode, recover-ing the junction force from frequency shifts — especially in the presence of dissipation and dynamic structural changes during junction elongation experiments — is non-trivial and a detailed understanding remains to be developed 35.The most basic information that can be determined throughsimultaneous measurement of force and conductance in metalThermoelectricsSpintronics andMechanicsOptoelectronicsHotColdFigure 1 | Probing multiple properties of single-molecule junctions. phenomena in addition to demonstrations of quantum mechanical spin- and interference-dependent transport concepts for which there are no analogues in conventional electronics.contacts is the relation between the measured current and force. An experimental study by Ternes et al.36 attempted to resolve a long-standing theoretical prediction 37 that indicated that both the tunnelling current and force between two atomic-scale metal contacts scale similarly with distance (recently revisited by Jelinek et al.38). Using the dynamic force microscopy technique, Ternes et al. effectively probed the interplay between short-range forces and conductance under ultrahigh-vacuum conditions at liquid helium temperatures. As illustrated in Fig. 2a, the tunnel-ling current through the gap between the metallic AFM probe and the substrate, and the force on the cantilever were recorded, and both were found to decay exponentially with increasing distance with nearly the same decay constant. Although an exponential decay in current with distance is easily explained by considering an orbital overlap of the tip and sample wavefunctions through a tunnel barrier using Simmons’ model 39, the exponential decay in the short-range forces indicated that perhaps the same orbital controlled the interatomic short-range forces (Fig. 2b).Using such dynamic force microscopy techniques, research-ers have also studied, under ultrahigh-vacuum conditions, forces and conductance across junctions with diatomic adsorbates such as CO (refs 40,41) and more recently with fullerenes 42, address-ing the interplay between electronic transport, binding ener-getics and structural evolution. I n one such experiment, Tautz and coworkers 43 have demonstrated simultaneous conduct-ance and stiffness measurements during the lifting of a PTCDA (3,4,9,10-perylene-tetracarboxylicacid-dianhydride) molecule from a Ag(111) substrate using the dynamic mode method with an Ag-covered tungsten AFM tip. The authors were able to follow the lifting process (Fig. 2c,d) monitoring the junction stiffness as the molecule was peeled off the surface to yield a vertically bound molecule, which could also be characterized electronically to determine the conductance through the vertical metal–molecule–metal junction with an idealized geometry. These measurements were supported by force field-based model calculations (Fig. 2c and dashed black line in Fig. 2d), presenting a way to correlate local geometry to the electronic transport.Extending the work from metal point contacts, ambient meas-urements of force and conductance across single-molecule junc-tions have been carried out using the static AFM mode 33. These measurements allow correlation of the bond rupture forces with the chemistry of the linker group and molecular backbone. Single-molecule junctions are formed between a Au-metal sub-strate and a Au-coated cantilever in an environment of molecules. Measurements of current through the junction under an applied bias determine conductance, while simultaneous measurements of cantilever deflection relate to the force applied across the junction as shown in Fig. 2e. Although measurements of current throughzF zyxCantileverIVabConductance G (G 0)1 2 3Tip–sample distance d (Å)S h o r t -r a n g e f o r c e F z (n N )10−310−210−11110−110−210−3e10−410−210C o n d u c t a n c e (G 0)Displacement86420Force (nN)0.5 nm420−2F o r c e (n N )−0.4−0.200.20.4Displacement (nm)SSfIncreasing rupture forcegc(iv)(i)(iii)(ii)Low HighCounts d9630−3d F /d z (n N n m −1)(i)(iv)(iii)(ii)A p p r o a chL i ft i n g110−210−4G (2e 2/h )2051510z (Å)H 2NNH 2H 2NNH 2NNFigure 2 | Simultaneous measurements of electronic transport and mechanics. a , A conducting AFM set-up with a stiff probe (shown schematically) enabled the atomic-resolution imaging of a Pt adsorbate on a Pt(111) surface (tan colour topography), before the simultaneous measurement of interatomic forces and currents. F z , short-range force. b , Semilogarithmic plot of tunnelling conductance and F z measured over the Pt atom. A similar decay constant for current and force as a function of interatomic distance is seen. The blue dashed lines are exponential fits to the data. c , Structural snapshots showing a molecular mechanics simulation of a PTCDA molecule held between a Ag substrate and tip (read right to left). It shows the evolution of the Ag–PTCDA–Ag molecular junction as a function of tip–surface distance. d , Upper panel shows experimental stiffness (d F /d z ) measurements during the lifting process performed with a conducting AFM. The calculated values from the simulation are overlaid (dashed black line). Lower panel shows simultaneously measured conductance (G ). e , Simultaneously measured conductance (red) and force (blue) measurements showing evolution of a molecular junction as a function of junction elongation. A Au point contact is first formed, followed by the formation of a single-molecule junction, which then ruptures on further elongation. f , A two-dimensional histogram of thousands of single-molecule junctionrupture events (for 1,4-bis(methyl sulphide) butane; inset), constructed by redefining the rupture location as the zero displacement point. The most frequently measured rupture force is the drop in force (shown by the double-headed arrow) at the rupture location in the statistically averaged force trace (overlaid black curve). g , Beyond the expected dependence on the terminal group, the rupture force is also sensitive to the molecular backbone, highlighting the interplay between chemical structure and mechanics. In the case of nitrogen-terminated molecules, rupture force increases fromaromatic amines to aliphatic amines and the highest rupture force is for molecules with pyridyl moieties. Figure reproduced with permission from: a ,b , ref. 36, © 2011 APS; c ,d , ref. 43, © 2011 APS.DOI: 10.1038/NNANO.2013.91such junctions are easily accomplished using standard instru-mentation, measurements of forces with high resolution are not straightforward. This is because a rather stiff cantilever (with a typical spring constant of ~50 N m−1) is typically required to break the Au point contact that is first formed between the tip and sub-strate, before the molecular junctions are created. The force reso-lution is then limited by the smallest deflection of the cantilever that can be measured. With a custom-designed system24 our group has achieved a cantilever displacement resolution of ~2 pm (com-pare with Au atomic diameter of ~280 pm) using an optical detec-tion scheme, allowing the force noise floor of the AFM set-up to be as low as 0.1 nN even with these stiff cantilevers (Fig. 2e). With this system, and a novel analysis technique using two-dimensional force–displacement histograms as illustrated in Fig. 2f, we have been able to systematically probe the influence of the chemical linker group44,45 and the molecular backbone46 on single-molecule junction rupture force as illustrated in Fig. 2g.Significant future opportunities with force measurements exist for investigations that go beyond characterizations of the junc-tion rupture force. In two independent reports, one by our group47 and another by Wagner et al.48, force measurements were used to quantitatively measure the contribution of van der Waals interac-tions at the single-molecule level. Wagner et al. used the stiffness data from the lifting of PTCDA molecules on a Au(111) surface, and fitted it to the stiffness calculated from model potentials to estimate the contribution of the various interactions between the molecule and the surface48. By measuring force and conductance across single 4,4’-bipyridine molecules attached to Au electrodes, we were able to directly quantify the contribution of van der Waals interactions to single-molecule-junction stiffness and rupture force47. These experimental measurements can help benchmark the several theoretical frameworks currently under development aiming to reliably capture van der Waals interactions at metal/ organic interfaces due to their importance in diverse areas includ-ing catalysis, electronic devices and self-assembly.In most of the experiments mentioned thus far, the measured forces were typically used as a secondary probe of junction prop-erties, instead relying on the junction conductance as the primary signature for the formation of the junction. However, as is the case in large biological molecules49, forces measured across single-mol-ecule junctions can also provide the primary signature, thereby making it possible to characterize non-conducting molecules that nonetheless do form junctions. Furthermore, molecules pos-sess many internal degrees of motion (including vibrations and rotations) that can directly influence the electronic transport50, and the measurement of forces with such molecules can open up new avenues for mechanochemistry51. This potential of using force measurements to elucidate the fundamentals of electronic transport and binding interactions at the single-molecule level is prompting new activity in this area of research52–54. Optoelectronics and optical spectroscopyAddressing optical properties and understanding their influence on electronic transport in individual molecular-scale devices, col-lectively referred to as ‘molecular optoelectronics’, is an area with potentially important applications55. However, the fundamental mismatch between the optical (typically, approximately at the micrometre scale) and molecular-length scales has historically presented a barrier to experimental investigations. The motiva-tions for single-molecule optoelectronic studies are twofold: first, optical spectroscopies (especially Raman spectroscopy) could lead to a significantly better characterization of the local junction structure. The nanostructured metallic electrodes used to real-ize single-molecule junctions are coincidentally some of the best candidates for local field enhancement due to plasmons (coupled excitations of surface electrons and incident photons). This there-fore provides an excellent opportunity for understanding the interaction of plasmons with molecules at the nanoscale. Second, controlling the electronic transport properties using light as an external stimulus has long been sought as an attractive alternative to a molecular-scale field-effect transistor.Two independent groups have recently demonstrated simulta-neous optical and electrical measurements on molecular junctions with the aim of providing structural information using an optical probe. First, Ward et al.56 used Au nanogaps formed by electromi-gration57 to create molecular junctions with a few molecules. They then irradiated these junctions with a laser operating at a wavelength that is close to the plasmon resonance of these Au nanogaps to observe a Raman signal attributable to the molecules58 (Fig. 3a). As shown in Fig. 3b, they observed correlations between the intensity of the Raman features and magnitude of the junction conductance, providing direct evidence that Raman signatures could be used to identify junction structures. They later extended this experimental approach to estimate vibrational and electronic heating in molecu-lar junctions59. For this work, they measured the ratio of the Raman Stokes and anti-Stokes intensities, which were then related to the junction temperature as a function of the applied bias voltage. They found that the anti-Stokes intensity changed with bias voltage while the Stokes intensity remained constant, indicating that the effective temperature of the Raman-active mode was affected by passing cur-rent through the junction60. Interestingly, Ward et al. found that the vibrational mode temperatures exceeded several hundred kelvin, whereas earlier work by Tao and co-workers, who used models for junction rupture derived from biomolecule research, had indicated a much smaller value (~10 K) for electronic heating61. Whether this high temperature determined from the ratio of the anti-Stokes to Stokes intensities indicates that the electronic temperature is also similarly elevated is still being debated55, however, one can definitely conclude that such measurements under a high bias (few hundred millivolts) are clearly in a non-equilibrium transport regime, and much more research needs to be performed to understand the details of electronic heating.Concurrently, Liu et al.62 used the STM-based break-junction technique8 and combined this with Raman spectroscopy to per-form simultaneous conductance and Raman measurements on single-molecule junctions formed between a Au STM tip and a Au(111) substrate. They coupled a laser to a molecular junction as shown in Fig. 3c with a 4,4’-bipyridine molecule bridging the STM tip (top) and the substrate (bottom). Pyridines show clear surface-enhanced Raman signatures on metal58, and 4,4’-bipy-ridine is known to form single-molecule junctions in the STM break-junction set-up8,15. Similar to the study of Ward et al.56, Liu et al.62 found that conducting molecular junctions had a Raman signature that was distinct from the broken molecu-lar junctions. Furthermore, the authors studied the spectra of 4,4’-bipyridine at different bias voltages, ranging from 10 to 800 mV, and reported a reversible splitting of the 1,609 cm–1 peak (Fig. 3d). Because this Raman signature is due to a ring-stretching mode, they interpreted this splitting as arising from the break-ing of the degeneracy between the rings connected to the source and drain electrodes at high biases (Fig. 3c). Innovative experi-ments such as these have demonstrated that there is new physics to be learned through optical probing of molecular junctions, and are initiating further interest in understanding the effect of local structure and vibrational effects on electronic transport63. Experiments that probe electroluminescence — photon emis-sion induced by a tunnelling current — in these types of molec-ular junction can also offer insight into structure–conductance correlations. Ho and co-workers have demonstrated simultaneous measurement of differential conductance and photon emissionDOI: 10.1038/NNANO.2013.91from individual molecules at a submolecular-length scale using an STM 64,65. Instead of depositing molecules directly on a metal sur-face, they used an insulating layer to decouple the molecule from the metal 64,65 (Fig. 3e). This critical factor, combined with the vac-uum gap with the STM tip, ensures that the metal electrodes do not quench the radiated photons, and therefore the emitted photons carry molecular fingerprints. Indeed, the experimental observation of molecular electroluminescence of C 60 monolayers on Au(110) by Berndt et al.66 was later attributed to plasmon-mediated emission of the metallic electrodes, indirectly modulated by the molecule 67. The challenge of finding the correct insulator–molecule combination and performing the experiments at low temperature makes electro-luminescence relatively uncommon compared with the numerous Raman studies; however, progress is being made on both theoretical and experimental fronts to understand and exploit emission pro-cesses in single-molecule junctions 68.Beyond measurements of the Raman spectra of molecular junctions, light could be used to control transport in junctions formed with photochromic molecular backbones that occur in two (or more) stable and optically accessible states. Some common examples include azobenzene derivatives, which occur in a cis or trans form, as well as diarylene compounds that can be switched between a conducting conjugated form and a non-conducting cross-conjugated form 69. Experiments probing the conductance changes in molecular devices formed with such compounds have been reviewed in depth elsewhere 70,71. However, in the single-mol-ecule context, there are relatively few examples of optical modula-tion of conductance. To a large extent, this is due to the fact that although many molecular systems are known to switch reliably in solution, contact to metallic electrodes can dramatically alter switching properties, presenting a significant challenge to experi-ments at the single-molecule level.Two recent experiments have attempted to overcome this chal-lenge and have probed conductance changes in single-molecule junctions while simultaneously illuminating the junctions with visible light 72,73. Battacharyya et al.72 used a porphyrin-C 60 ‘dyad’ molecule deposited on an indium tin oxide (I TO) substrate to demonstrate the light-induced creation of an excited-state mol-ecule with a different conductance. The unconventional transpar-ent ITO electrode was chosen to provide optical access while also acting as a conducting electrode. The porphyrin segment of the molecule was the chromophore, whereas the C 60 segment served as the electron acceptor. The authors found, surprisingly, that the charge-separated molecule had a much longer lifetime on ITO than in solution. I n the break-junction experiments, the illuminated junctions showed a conductance feature that was absent without1 μm Raman shift (cm –1)1,609 cm –1(–)Source 1,609 cm–1Drain (+)Low voltage High voltageMgPNiAl(110)STM tip (Ag)VacuumThin alumina 1.4 1.5 1.6 1.701020 3040200400Photon energy (eV)3.00 V 2.90 V 2.80 V 2.70 V 2.60 V2.55 V 2.50 VP h o t o n c o u n t s (a .u .)888 829 777731Wavelength (nm)Oxideacebd f Raman intensity (CCD counts)1,5001,00050000.40.30.20.10.01,590 cm −11,498 cm −1d I /d V (μA V –1)1,609 cm –11,631 cm–11 μm1 μmTime (s)Figure 3 | Simultaneous studies of optical effects and transport. a , A scanning electron micrograph (left) of an electromigrated Au junction (light contrast) lithographically defined on a Si substrate (darker contrast). The nanoscale gap results in a ‘hot spot’ where Raman signals are enhanced, as seen in the optical image (right). b , Simultaneously measured differential conductance (black, bottom) and amplitudes of two molecular Raman features (blue traces, middle and top) as a function of time in a p-mercaptoaniline junction. c , Schematic representation of a bipyridine junction formed between a Au STM tip and a Au(111) substrate, where the tip enhancement from the atomically sharp STM tip results in a large enhancement of the Raman signal. d , The measured Raman spectra as a function of applied bias indicate breaking of symmetry in the bound molecule. e , Schematic representation of a Mg-porphyrin (MgP) molecule sandwiched between a Ag STM tip and a NiAl(110) substrate. A subnanometre alumina insulating layer is a key factor in measuring the molecular electroluminescence, which would otherwise be overshadowed by the metallic substrate. f , Emission spectra of a single Mg-porphyrin molecule as a function of bias voltage (data is vertically offset for clarity). At high biases, individual vibronic peaks become apparent. The spectra from a bare oxide layer (grey) is shown for reference. Figure reproduced with permission from: a ,b , ref. 56, © 2008 ACS; c ,d , ref. 62, © 2011 NPG; e ,f , ref. 65, © 2008 APS.DOI: 10.1038/NNANO.2013.91light, which the authors assigned to the charge-separated state. In another approach, Lara-Avila et al.73 have reported investigations of a dihydroazulene (DHA)/vinylheptafulvene (VHF) molecule switch, utilizing nanofabricated gaps to perform measurements of Au–DHA–Au single-molecule junctions. Based on the early work by Daub et al.74, DHA was known to switch to VHF under illumina-tion by 353-nm light and switch back to DHA thermally. In three of four devices, the authors observed a conductance increase after irradiating for a period of 10–20 min. In one of those three devices, they also reported reversible switching after a few hours. Although much more detailed studies are needed to establish the reliability of optical single-molecule switches, these experiments provide new platforms to perform in situ investigations of single-molecule con-ductance under illumination.We conclude this section by briefly pointing to the rapid pro-gress occurring in the development of optical probes at the single-molecule scale, which is also motivated by the tremendous interest in plasmonics and nano-optics. As mentioned previously, light can be coupled into nanoscale gaps, overcoming experimental chal-lenges such as local heating. Banerjee et al.75 have exploited these concepts to demonstrate plasmon-induced electrical conduction in a network of Au nanoparticles that form metal–molecule–metal junctions between them (Fig. 3f). Although not a single-molecule measurement, the control of molecular conductance through plas-monic coupling can benefit tremendously from the diverse set of new concepts under development in this area, such as nanofabri-cated transmission lines 76, adiabatic focusing of surface plasmons, electrical excitation of surface plasmons and nanoparticle optical antennas. The convergence of plasmonics and electronics at the fundamental atomic- and molecular-length scales can be expected to provide significant opportunities for new studies of light–mat-ter interaction 77–79.Thermoelectric characterization of single-molecule junctions Understanding the electronic response to heating in a single-mole-cule junction is not only of basic scientific interest; it can have a tech-nological impact by improving our ability to convert wasted heat into usable electricity through the thermoelectric effect, where a temper-ature difference between two sides of a device induces a voltage drop across it. The efficiency of such a device depends on its thermopower (S ; also known as the Seebeck coefficient), its electric and thermal conductivity 80. Strategies for increasing the efficiency of thermoelec-tric devices turned to nanoscale devices a decade ago 81, where one could, in principle, increase the electronic conductivity and ther-mopower while independently minimizing the thermal conductiv-ity 82. This has motivated the need for a fundamental understandingof thermoelectrics at the single-molecule level 83, and in particular, the measurement of the Seebeck coefficient in such junctions. The Seebeck coefficient, S = −(ΔV /ΔT )|I = 0, determines the magnitude of the voltage developed across the junction when a temperature dif-ference ΔT is applied, as illustrated in Fig. 4a; this definition holds both for bulk devices and for single-molecule junctions. If an addi-tional external voltage ΔV exists across the junction, then the cur-rent I through the junction is given by I = G ΔV + GS ΔT where G is the junction conductance 83. Transport through molecular junctions is typically in the coherent regime where conductance, which is pro-portional to the electronic transmission probability, is given by the Landauer formula 84. The Seebeck coefficient at zero applied voltage is then related to the derivative of the transmission probability at the metal Fermi energy (in the off-resonance limit), with, S = −∂E ∂ln( (E ))π2k 2B T E 3ewhere k B is the Boltzmann constant, e is the charge of the electron, T (E ) is the energy-dependent transmission function and E F is the Fermi energy. When the transmission function for the junction takes on a simple Lorentzian form 85, and transport is in the off-resonance limit, the sign of S can be used to deduce the nature of charge carriers in molecular junctions. In such cases, a positive S results from hole transport through the highest occupied molecu-lar orbital (HOMO) whereas a negative S indicates electron trans-port through the lowest unoccupied molecular orbital (LUMO). Much work has been performed on investigating the low-bias con-ductance of molecular junctions using a variety of chemical linker groups 86–89, which, in principle, can change the nature of charge carriers through the junction. Molecular junction thermopower measurements can thus be used to determine the nature of charge carriers, correlating the backbone and linker chemistry with elec-tronic aspects of conduction.Experimental measurements of S and conductance were first reported by Ludoph and Ruitenbeek 90 in Au point contacts at liquid helium temperatures. This work provided a method to carry out thermoelectric measurements on molecular junctions. Reddy et al.91 implemented a similar technique in the STM geome-try to measure S of molecular junctions, although due to electronic limitations, they could not simultaneously measure conductance. They used thiol-terminated oligophenyls with 1-3-benzene units and found a positive S that increased with increasing molecular length (Fig. 4b). These pioneering experiments allowed the iden-tification of hole transport through thiol-terminated molecular junctions, while also introducing a method to quantify S from statistically significant datasets. Following this work, our group measured the thermoelectric current through a molecular junction held under zero external bias voltage to determine S and the con-ductance through the same junction at a finite bias to determine G (ref. 92). Our measurements showed that amine-terminated mol-ecules conduct through the HOMO whereas pyridine-terminatedmolecules conduct through the LUMO (Fig. 4b) in good agree-ment with calculations.S has now been measured on a variety of molecular junctionsdemonstrating both hole and electron transport 91–95. Although the magnitude of S measured for molecular junctions is small, the fact that it can be tuned by changing the molecule makes these experiments interesting from a scientific perspective. Future work on the measurements of the thermal conductance at the molecu-lar level can be expected to establish a relation between chemical structure and the figure of merit, which defines the thermoelec-tric efficiencies of such devices and determines their viability for practical applications.SpintronicsWhereas most of the explorations of metal–molecule–metal junc-tions have been motivated by the quest for the ultimate minia-turization of electronic components, the quantum-mechanical aspects that are inherent to single-molecule junctions are inspir-ing entirely new device concepts with no classical analogues. In this section, we review recent experiments that demonstrate the capability of controlling spin (both electronic and nuclear) in single-molecule devices 96. The early experiments by the groups of McEuen and Ralph 97, and Park 98 in 2002 explored spin-depend-ent transport and the Kondo effect in single-molecule devices, and this topic has recently been reviewed in detail by Scott and Natelson 99. Here, we focus on new types of experiment that are attempting to control the spin state of a molecule or of the elec-trons flowing through the molecular junction. These studies aremotivated by the appeal of miniaturization and coherent trans-port afforded by molecular electronics, combined with the great potential of spintronics to create devices for data storage and quan-tum computation 100. The experimental platforms for conducting DOI: 10.1038/NNANO.2013.91。

医工交叉前沿技术英语

医工交叉前沿技术英语

医工交叉前沿技术英语Medical Engineering Cross-cutting Frontier TechnologyIn recent years, medical engineering has rapidly advanced through the integration and application of cutting-edge technologies. This cross-cutting approach has led to the emergence of multiple frontiers in the field. Here, we will discuss some of the prominent frontier technologies in medical engineering.1. Biomedical Imaging:Biomedical imaging encompasses a range of techniques aimed at visualizing and diagnosing diseases within the human body. These include X-ray imaging, computed tomography (CT), magnetic resonance imaging (MRI), ultrasound, and positron emission tomography (PET). Advances in image processing algorithms and hardware have significantly improved the resolution and accuracy of these imaging techniques, enabling earlier and more accurate detection of diseases.2. Bioinformatics:Bioinformatics is an interdisciplinary field that combines biology, computer science, and statistics to manage and analyze biological data, particularly genomics data. This field has revolutionized medical research by enabling the storage, retrieval, and analysis of vast amounts of genomic and proteomic data. Bioinformatics techniques are used for understanding genetic diseases, developing personalized medicine, and analyzing complex biological networks.3. Biomedical Materials and Tissue Engineering: Advancements in materials science have led to the development ofinnovative biomaterials that can interface with the human body, such as biodegradable materials and smart materials. These materials are used in a variety of applications, including prosthetic implants, drug delivery systems, and tissue engineering scaffolds. Tissue engineering, another frontier in medical engineering, involves the fabrication of artificial tissues and organs using scaffolds and cells. This field has the potential to revolutionize organ transplantation and regenerative medicine.4. Artificial Intelligence (AI) and Machine Learning:AI and machine learning techniques are increasingly being applied in medical engineering to improve diagnosis, treatment planning, and patient monitoring. These technologies can analyze large datasets, identify patterns, and make accurate predictions. AI algorithms can assist in image interpretation, predict disease progression, and support clinical decision-making. Additionally, AI-powered robotics are being developed for surgical procedures, enhancing precision and reducing invasiveness.5. Nanotechnology:Nanotechnology involves the manipulation and control of materials at the nanometer scale. In medical engineering, nanotechnology has applications in drug delivery, imaging, diagnosis, and therapy. Nanoscale particles and structures can improve targeting of drugs to specific tissues, enhance imaging contrast, and enable novel therapies. This field holds great potential for personalized medicine and targeted therapies. These are just a few examples of the cross-cutting frontier technologies in medical engineering. Through the integration ofthese technologies, medical engineering continues to advance, leading to new discoveries, improved healthcare outcomes, and the potential for transformative breakthroughs in healthcare.。

关于拓扑超导的英文演讲

关于拓扑超导的英文演讲

关于拓扑超导的英文演讲Topological superconductivity is a fascinating topic in the field of condensed matter physics that has garnered significant attention in recent years. In this speech, I will provide an overview of the concept, its potential applications, and the ongoing research in this exciting field.Firstly, let's understand what topological superconductivity is. Superconductivity is a quantum phenomenon that occurs at very low temperatures, where certain materials can conduct electricity without any resistance. This property is due to the formation of Cooper pairs, which are pairs of electrons with opposite spins. Topological superconductivity refers to a special class of superconductors where the Cooper pairs exhibit an additional quantum property known as non-Abelian statistics.Non-Abelian statistics means that the quantum wavefunction of the system is not invariant under the exchange of particles. This unique characteristic holds the potential for storing and manipulating quantum information, making topological superconductors a promising platform for developing quantum computers. Unlike conventional superconductors, which are described by Abelian statistics, the non-Abelian nature of topological superconductivity provides protection against certain types of local perturbations and disturbances, making them more stable against noise.The study of topological superconductivity is closely connected to the field of topological insulators. Topological insulators are materials that have a unique electronic band structure that results in conducting surface states while remaining insulating in the bulk. This distinct behavior arises due to the nontrivial topology of the electron wavefunctions. By introducing superconductivity into topological insulators, researchers have been able to realize topological superconductivity.One of the most exciting prospects of topological superconductivity is its potential for hosting Majorana fermions. Majorana fermions are hypothesized particles that are their own antiparticles, meaning they can annihilate and reappear as their own particle. Majorana fermions have distinct properties that make them attractive for quantumcomputing, as they are expected to have a higher resistance to decoherence. Decoherence is a phenomenon that can disrupt quantum states and is a major challenge in quantum computing.Numerous experimental efforts have been dedicated to the search for evidence of Majorana fermions in topological superconductors. One of the most notable experiments is the creation of a hybrid structure called a topological superconductor nanowire. This nanowire, made of materials with strong spin-orbit coupling and proximity-induced superconductivity, exhibits the predicted signatures of Majorana fermions. These experimental advancements have sparked great excitement and sparked further research in the field of topological superconductivity.Apart from quantum computing, topological superconductivity also has potential applications in other areas, such as topological quantum computation and fault-tolerant quantum memories. Researchers are actively exploring the possibilities of using the unique properties of topological superconductors to create new technologies that can revolutionize various fields.In conclusion, topological superconductivity is a captivating area of research with great potential for quantum technologies. Its non-Abelian nature and the possible existence of Majorana fermions make it a promising platform for quantum computing and other applications. Continued experimental efforts and theoretical investigations are crucial in unraveling the mysteries and realizing the full potential of topological superconductivity. The future of this field holds exciting possibilities that could shape the future of quantum technology.。

结霜初期超疏水表面液滴生长的规律

结霜初期超疏水表面液滴生长的规律

第51卷第1期2020年1月中南大学学报(自然科学版)Journal of Central South University(Science and Technology)V ol.51No.1Jan.2020结霜初期超疏水表面液滴生长的规律赵伟,梁彩华,成赛凤,罗倩妮(东南大学能源与环境学院,江苏南京,210096)摘要:为了研究结霜初期液滴在超疏水表面的生长规律,建立结霜初期超疏水表面液滴生长的分层模型,揭示液滴在生长过程中各层温差的分布特点,并深入研究表面接触角、面积分数、基底温度以及空气相对湿度对液滴生长的影响规律。

研究结果表明:在结霜初期,液滴的Knudsen层以及主流连续区层这2部分的温差占基底过冷度的95%以上;随着表面接触角的增大,传质环节中的主流连续区层的温差减小,导致液滴生长减缓;面积分数S对液滴生长的影响较小,当S=0.04时,与其相关的热阻Rwe仅约占液滴-翅片层总热阻的0.2%;液滴生长速率随着基底温度的降低和空气相对湿度的升高而升高。

关键词:超疏水表面;液滴生长;接触角;面积分数中图分类号:TK124文献标志码:A文章编号:1672-7207(2020)01-0231-08Rule of droplets growth in the early stage of frost formation onsuperhydrophobic surfacesZHAO Wei,LIANG Caihua,CHENG Saifeng,LUO Qianni(School of Energy and Environment,Southeast University,Nanjing210096,China) Abstract:In order to study the droplets growth on the superhydrophobic surfaces in the early stage of frostformation,the model of droplets growth under frosting conditions was established.The proportion of the temperature difference of each layer in the droplets growth process was analyzed.The effects of contact angle, area fraction,substrate temperature and relative humidity on droplets growth were studied.The results show that in the early stage of frost formation,the temperature difference of the Knudsen layer and the continuum region layer account for more than95%of the total temperature difference.With the increase of surface contact angle,the temperature difference of continuum region layer decreases,which leads to the slow growth of droplets.The areafraction S has little effect on the droplets growth.When S=0.04,the related thermal resistance Rweonly accounts for about0.2%of the total thermal resistance of the droplet-fin layer.The rate of droplets growth increases as the substrate temperature decreases and the relative humidity of the air increases.Key words:superhydrophobic surfaces;droplets growth;contact angle;area fractionDOI:10.11817/j.issn.1672-7207.2020.01.026收稿日期:2019−03−12;修回日期:2019−05−23基金项目(Foundation item):国家自然科学基金资助项目(51676033);“十三五”国家重点研发计划项目(2016YFC700304) (Project(51676033)supported by the National Natural Science Foundation of China;Project(2016YFC700304)supported by the National Key R&D Programs during the13th Five-Year Plan Period)通信作者:梁彩华,博士,教授,博士生导师,从事制冷空调、建筑节能及可再生能源利用研究;E-mail:caihualiang@163.com第51卷中南大学学报(自然科学版)空气源热泵在冬季制热运行时不可避免地会出现结霜现象。

太赫兹 硅 超表面

太赫兹 硅 超表面

太赫兹硅超表面英文回答:Terahertz metasurfaces have emerged as promising platforms for manipulating and controlling electromagnetic waves due to their subwavelength feature sizes and unique optical properties. Silicon, with its high refractive index and low optical loss, is a widely used material for fabricating terahertz metasurfaces. By carefully designing the shape, size, and arrangement of silicon structures, it is possible to achieve tailored optical responses, such as focusing, beam steering, and polarization conversion, at terahertz frequencies.One of the key advantages of silicon terahertz metasurfaces is their compatibility with standard silicon fabrication processes, which enables large-scale and cost-effective manufacturing. Additionally, the high refractive index of silicon allows for the realization of subwavelength structures with strong electromagneticresonances, leading to enhanced optical performance.Various types of silicon terahertz metasurfaces have been demonstrated, including periodic, aperiodic, andchiral structures. Periodic metasurfaces are composed of regularly arranged silicon elements, while aperiodic metasurfaces feature irregular or random arrangements. Chiral metasurfaces exhibit handedness-dependent optical responses, which can be utilized for polarization control and circular dichroism.The applications of silicon terahertz metasurfaces are diverse, ranging from imaging and sensing to communication and spectroscopy. For instance, metasurface lenses can be designed to focus terahertz waves, enabling high-resolution imaging and non-destructive testing. Metasurface absorbers can be employed for selective absorption and detection of terahertz radiation, with potential applications in chemical sensing and environmental monitoring. Moreover, metasurface antennas can be used for beam steering and polarization control, which are crucial for terahertz wireless communication systems.中文回答:太赫兹硅超表面由于其亚波长特征尺寸和独特的光学特性,已成为操纵和控制电磁波的有前途的平台。

Control Strategy for Battery-Ultracapacitor Hybrid Energy Storage System

Control Strategy for Battery-Ultracapacitor Hybrid Energy Storage System

Control Strategy for Battery-Ultracapacitor Hybrid Energy Storage SystemF. S. Garcia*, A. A. Ferreira**, and J. A. Pomilio**** University of Campinas, Campinas, Brazil. Email: fgarcia@dsce.fee.unicamp.br ** Federal University of Pampa, Alegrete, Brazil. Email: andre.cta.unipampa@*** University of Campinas, Campinas, Brazil. Email: antenor@dsce.fee.unicamp.brAbstract—Hybrid energy storage systems have been investigated with the objective of improving the storage of electrical energy. In these systems, two (or more) energy sources work together to create a superior device in comparison with a single source. In particular, batteries and ultracapacitors have complementary characteristics that make them attractive for a hybrid energy storage system. But the result of this combination is fundamentally related to how the sources are interconnect and controlled. The present work reviews the advantages of battery-ultracapacitor hybridization, some existing solutions to coordinate the power flow, and proposes a new control strategy, designed for the improvement of performance and energy efficiency, while also extending the battery life. The control strategy uses classical controllers and provides good results with low computational cost. Experimental results are presented. Keywords—Battery; Control systems; Power electronics; Road vehicle electric propulsion; Ultracapacitor.N OMENCLATUREBattery terminal voltageUltracapacitor terminal voltageBattery converter output currentUltracapacitor converter output currentBattery converter input currentUltracapacitor converter input currentLoad current ("motor")Total current entering DC linkOutput voltageAbove variables are functions of time. When they appear in uppercase, Laplace transform is indicated. When they are followed by an asterisk, a reference value is represented.Battery series resistanceInput capacitor of battery converterInductance of battery converter inductorResistence of battery converter inductorUltracapacitor capacitanceUltracapacitor series resistanceInput capacitor of ultracapacitor converterInductance of ultracapacitor converter inductorResistence of ultracapacitor converter inductorOutput capacitorI.I NTRODUCTION"Energy is central to achieving the interrelated economic, social and environmental aims of sustainable human development. But if we are to realise this important goal, the kinds of energy we produce and the ways we use them will have to change [1]."The great advance in battery technology, fueled by nanotechnology [2-5], and economical and environmental pressures, have opened a road to commercially viable battery electric vehicles (BEVs) and plug-in hybrid electric vehicles (PHEVs), as indicated by the growing investment of established and start-up automotive companies [6-8]. This movement represents an important step toward a sustainable transportation system.Still, further improvement of the energy storage system (ESS) is a key factor for the wide adoption of electric vehicles (EVs). In order to accomplish this goal, it has been investigated the impacts of the integration of two (or more) energy sources, with the objective of attaining the best characteristics of each, producing a hybrid energy storage system (HESS) [9]. However, the degree of improvement of a HESS, compared to a single-source ESS, depends intrinsically on how the sources are combined to exploit the strengths and avoid the weaknesses of each source.As batteries, ultracapacitors are evolving rapidly and costs are declining [10-12]. A promising path is using ultracapacitors to complement the action of batteries [9, 13]. Commercial scale products have already started to consider this combination [14-15].II.R EASONS FOR B ATTERY-U LTRACAPACITORH YBRIDIZATIONA.Power versus EnergyThe power demanded by an EV is very variable. Peak power occurs at acceleration and braking, which happens for a short time, compared to the whole driving cycle. The ratio of the peak power to average power can be over 10:1 [13].Within the available technology, there is a trade-off between specific energy and specific power, as shown in Ragone plot of Fig, 1. Even for a given battery chemistry, it is usually possible to optimize the cell design for better specific energy or for better specific power.Combining batteries and ultracapacitors can create, for applications with high peak-to-average power, a virtual source with high specific energy and high specific power.S p e c i f i c E n e r g y (W h /k g)Figure 1: Ragone plotB. Higher Energy Efficiency"Delivering high power for a short period of time is deadly to batteries, but it is the ultracapacitor strongest suit [16]." As the ultracapacitor is able to deliver or receive energy in peak power situations, it can act as a load-leveling device for the battery. If this is done, the battery demand would become closer to the average power demand, thus reducing its RMS and peak currents.The relationship of the discharge time and discharge current in a battery can be modeled by Peukert capacity [17],T(1)In (1), is the Peukert capacity (which is a characteristicof the battery being analyzed), I is the discharge current, T is the discharge time, and is the Peukert coefficient (usually1.1-1.3 for lead acid, and 1.05-1.2 for nickel metal hydride and lithium ion [18]).As a consequence of (1), battery delivers less charge (the integral of current) when discharged faster. As the terminal voltage is lower for higher current – on account of the internalresistance – the energy delivered is still reduced. Reference [19] compares the reduction of energy with increased discharge current for different lithium-ion chemistries. Reference [20] relates the reduction of energy efficiency of a lithium battery with increased discharge current. Reference [21] shows that pulsed discharge profile results in increased cell temperature, considering the same average current. C. Regenerative braking According to [13], the energy involved in the acceleration and deceleration transients is roughly two thirds of the totalamount of energy over the entire mission in urban driving. Therefore, increasing the energy recovered by regenerative braking has a great potential to extend the range of an electrical vehicle. Charge current in batteries are limited to a smaller value compared to discharge current. This characteristic limits the energy that can be recovered by regenerative braking. Ultracapacitors may have an important role in braking situation, because they can be charged very fast and their life is, to a much higher degree in comparison with batteries, insensitive to charge/discharge profile.D. Batteries lifeUltracapacitors have a very long life, significantly higher than batteries. As the battery cost is significant in the price of the whole car, the life of batteries is very important to customer acceptance of EVs. High charge or discharge rates shorten the battery life, including high current-rate lithium-ion batteries [22, 23]. Reference [24] analyses the life reduction of cobalt-based lithium-ion cells for high charge or discharge current.E. Temperature RangeUltracapacitors can operate under a wider temperature range than batteries [14]. When used together, ultracapacitors can attenuate the reduction in the power available from batteries in extreme temperature conditions.III. R EVIEW OF S OME E XISTING S OLUTIONSA. Parallel ConnectionA simple solution to integrate a battery and an ultracapacitor is to connect them in parallel. The different dinamic behavior of battery and ultracapacitor will determine the current distribution between sources. This connection results in a reduction of current peaks in the battery [25, 26], and improvement of battery life and efficiency is expected [27]. Nonetheless, these results can be improved when the ultracapacitor is connected through a converter and its voltage is allowed to a much wider range. If voltage is restricted by battery most stored energy becomes unavailable [9, 28].B. Rules and Reference TablesMany variations of control strategies that uses rules or reference curves and tables have been proposed.Reference [29] proposes to calculate the total power demand and, with this information, use a set of rules to dividethe power between battery and ultracapacitor. For example, in a given situation, all the power demand exceding a threshold would be supplied by the ultracapacitor.In [30], the ultracapacitor state of charge (SoC) is determined by the speed of the vehicle and the battery SoC. This strategy is designed so the ultracapacitor is discharged as the vehicle accelerates (and vice-versa), reducing the peaks in power demand related to accelaration and braking. Reference [31] concludes that an battery-ultracapacitor HESS using a similar strategy is not viable from a lifecycle cost perspective. In [32] the different rules (for example, battery suppliespower to the load and to rechage the ultracapacitor) areselected by the use of a flowchart that takes into consideration the state of charge of the sources and the load demand. C. Fuzzy Logic Control Fuzzy logic control was used to the specific problem of controlling a hybrid energy storage system with good results in [33]. It does not demand a precise model of the plant because it is based on designer's knowledge on it, what is an important advantage when a model is not available. Reference [34] applies fuzzy logic control together with management methodology to the problem of controlling a battery-ultracapacitor HESS.IV.P ROPOSED S OLUTIONA.TopologyThe battery and ultracapacitor are interconnected using electronic converters with bidirectional current capability, as shown in Fig. 2. The same topology is used in other works, for example in [35]. Reference [36] compares this topology with others.Figure 2: Connection of battery and ultracapacitorB.Current Inner LoopThe first step is to control the input current of the converterswith an inner control loop (as done in current mode controlconverters [37]). For this, it is needed a model relating theinput current of each converter and the control variable (forexample, the duty cycle for a PWM converter).In Fig. 3, the model of the plant that relates the input currentof the ultracapacitor converter with the control variable of thisconverter is . The current controller of ultracapacitorconverter is . This closed loop current control is inregion 1 and, when necessary, the closed loop response of thisregion is represented by .Again in Fig. 3, the model of the plant that relatesthe input current of the battery converter with thecontrol variable of this converter is . Thecurrent controller of battery converter is . Thisclosed loop control is in region 2 and, whennecessary, the closed loop response of this region isrepresented by .C.Output Voltage ControlThe following step is to implement the outputvoltage controller ( ). The ultracapacitorconverter input current reference () is used toregulate the output voltage ( ) at the reference level( ).In this step, the load current ( ) and the battery-converter output current ( ) are treated asperturbations. The control diagram for outputvoltage control is shown in Fig. 3, region 3.The use of the ultracapacitor current to control theoutput voltage results in a fast response and stableDC-link voltage for inverter. Because of thiscontroller action, the ultracapacitor current canchange very fast to supply load demand. This samecontrol loop was used in [33] and [35].D.Ultracapacitor Voltage ControlThe control of the battery converter input current reference(i) is done based on the ultracapacitor voltage. For this,the complete control diagram of the system presented in Fig. 3is used. At this point, only the load current (i ) is treated aperturbation and all other variables become part of the model.Based in the control diagram of Fig. 3, the transfer functionthat relates the ultracapacitor voltage with the reference ofcurrent in the battery is, as demonstrated in Appendix I,12The transfer function of (2) expresses how the battery-converter input-current reference affects the ultracapacitorvoltage. But it is interesting to notice that there is not a "direct"influence: these variables are linked by the action of thecontrollers previously implemented, as can be understood bythe control diagram of Fig. 3.This transfer function allows the synthesis of a controller forultracapacitor voltage ( ). This controller is responsiblefor restoring the ultracapacitor voltage to the reference level( ). Its bandwidth is limited to a frequency much lower thanthe output voltage controller ( ), consequently theultracapacitor is the first device to be affected by a change inload demand. Only after the ultracapacitor voltage is disturbed,battery current will be adjusted to restore ultracapacitorvoltage to the reference level ( ).This difference in the bandwidth of the voltage controllersresults in a rejection of power peaks by the battery. As thecontrol action restores ultracapacitor voltage, ultracapacitoroperates in a charge-sustaining mode, that is, it can be chargedor discharged until its limits, but after transients its voltagewill be brought back to the reference level ( ).Figure 3: Control diagramV.R ESULTSFig. 4 shows the experimental set-up. The control algorithm is implemented in an Analog Devices 16-bit DSP (ADSP-21992). The DSP and signal conditioning boards are in position A. The hardware (B) used to implement the converter is a Semikron four-leg (each leg composed by a SKM50GB123D IGBT module) inverter bridge module. One leg is used for battery converter, another for ultracapacitor converter, another for overvoltage protection and the other one is not used.Inductors are enclosed in a metal box (C), for reduction of EMI. A resistive load (D) is used to simulate the load. Twelve series-connected lead-acid batteries, rated 12V, 2.2Ah each, totaling 144V, 2.2Ah and five series-connected ultracapacitors modules made by Maxwell Technologies, rated 42V, 150F each, totaling 210V, 30F were used (E).Figure 4: Experimental set-upFor the modeling, simulation and experimental implementation a half bridge topology (also called bidirectional boost or buck-boost in literature) was used, as show in Fig. 5. The converters operate with PWM modulation and the switching frequency was set to 10 kHz. The driving of the power switches of each converter is complementary; consequently the converters are always in continuous conduction mode.Figure 5: Converters topologyExcept for the modeling of the converters, the control strategy presented in this paper is applicable to other converter topologies. Reference [38] presents alternatives and compares some topologies.In Fig. 5, the battery is modeled as an ideal voltage source with a series resistance, and the ultracapacitor is modeled as an ideal capacitor with a series resistance. The values ofFor the modeling of converters, state space averaging technique was used, which consists in writing the state space equations of the circuit for each possible configuration of the switches, than average the matrices of the system pondered by the time spent in each state [39].The modeling of these converters indicates a non-minimum phase system (that is, with a zero on the right-half plane). Current mode control attenuates this characteristic, because the output loop has a smaller bandwidth than the current-control loop, and the order of the system is reduced.The two current controllers (with bandwidth of 1 kHz) and the output voltage controller (with bandwidth of 100 Hz) were designed using the k-factor method [40]. At this point only this three of the four controllers presented in Fig. 3 are active on the DSP.To validate the correction of the model, the transfer function of (2) was experimentally measured. This measurement was accomplished using a signal generator (F) to generate a sinusoid acquired by the DSP and used as battery current reference. In this experiment, all controllers are active, except for . Magnitude and phase of reference and of consequent perturbation in ultracapacitor voltage were measured using an oscilloscope. The experimental result is compared to model prediction in Fig. 6.Figure 6: Model validation with experimental dataThe agreement of mathematical modeling and experimental data indicates accuracy of the model and also that the three active controllers are behaving as expected.With the model of Fig. 3 validated, a controller for ultracapacitor voltage was designed, using the transfer function of (2). Its bandwidth was set to 0.1Hz, much below than the output voltage controller bandwidth, which operates at 100Hz.Besides regulating the output voltage and restoring ultracapacitor voltage, it is very important to determine how the power demand is distributed between the sources. For this, the transfer functions relating output current of converters and load current were calculated based on control diagram of Fig.3 (as shown in Appendix II), and their magnitude are presented in Fig. 7. Now, all four controllers are operating.Figure 7: Transfer function of selected currents to load current Transfer functions plotted in Fig. 7 demonstrates that low-frequency (up to ultracapacitor-voltage-controller cutoff frequency) components of load current are supplied by the battery while high frequencies (from ultracapacitor-voltage-controller cutoff frequency to output-voltage-controller cutoff frequency) are supplied by the ultracapacitor.With all controllers implemented on the DSP, the system was tested with a resistive load. In the experiment shown in Fig. 8, the resistive load was turned on for about 4 seconds (its current is shown in channel 2). The output voltage remained stable (channel 1) by the fast action of the ultracapacitor current (channel 4). The current on battery (channel 3) changes slowly, as expected by low-pass-filtering action demonstrated in Fig. 7.Figure 8: Experimental waveformsIn the experiment shown in Fig. 9, the load was turned on and off several times in cycles of about 2 seconds (channel 2). If there was only a battery, its current would have to repeat the same pattern. But, as the ultracapacitor supplies high frequency components (channel 4), the current supplied by the battery corresponds roughly to the necessary to supply the average power (channel 3). The output voltage remained stable (channel 1).Figure 9: More experimental waveformsAs a limitation of the experiments performed, it should be noted that the use of a resistive load does not allow the emulation of a driving cycle neither the recovery of energy as it happens in regenerative braking.VI.C ONCLUSIONSThe battery-ultracapacitor hybridization can bring significant benefits to electric vehicles, due to the high peak-to-average power demand of this application and the complementary characteristics of batteries and ultracapacitors.A new control strategy to coordinate the power flow was presented. The strategy can be implemented with low computational cost.In a nutshell, the proposed control strategy regulates the output voltage and restores ultracapacitor voltage after transients. It divides the power demand into low-frequency components and high-frequency components. The low-frequency components are supplied by the battery, while high-frequency components are supplied by the ultracapacitor. The sum of the power supplied by both sources at each instant of time is virtually equal to the power demand, as necessary to keep the output voltage stable.As the system acts as a low pass filter for the battery current, the RMS current on battery is reduced (in comparison with a system with battery only), and higher efficiency on storage is expected. Also, lower discharge rates and attenuation of high frequency components in battery current should result in longer battery life.A PPENDIX IDerivation of (2), based on control diagram of Fig. 3, with the ultracapacitor voltage controller ( ) removed.When convenient, the DC level was removed. As the system is supposed to be linear and stable, this does not change the frequency response.11111111 11 11 1 1 11A PPENDIX IIDerivation of ultracapacitor current over load current transfer function, based on control diagram of Fig 3.1A PPENDIX IIIDerivation of battery current over load current transfer function, based on control diagram of Fig 3.1A CKNOWLEDGMENTThe authors thank to Ariadne Maria Brito Rizzoni Carvalho, Edson Adriano Vendrusculo, Fábio Benjovengo, and José Claudio Geromel for the revision of original manuscript and useful suggestions.R EFERENCES[1]J. Goldemberg (Editor), World Energy Assessment: Energy and the Challenge of Sustainability. United Nations Development Programme,2000. Available: /energy/weapub2000.htm[Accessed: July 12, 2008].[2] M. Armand and J.-M. Tarascon, “Building Better Batteries,” Nature,vol. 451, pp. 652–657, February 2008.[3]A. S. Arico, P. Bruce,B. Scrosati, J. M. Tarascon, and W. V. Schalkwijk, “Nanostructured Materials for Advanced EnergyConversion and Storage Devices,” Nature Materials, vol. 4, pp. 366–377, May 2005.[4] R. Gehm, “Sustainability on a Small Scale,” Automotive EngineeringInternational, pp. 28-30, April 2008.[5]C. K. Chan et al, “High Performance Lithium Battery Anodes Using Silicon Nanowires,” Nature Nanotechnologies, pp. 31-35, January 2008.[6] J. Voelcker, “An Almost All Electric Car,” IEEE Spectrum, pp. 5, April 2008. [7] E. Kintisch, “From Gasoline Alleys to Electric Avenues,” Science, vol. 319, pp. 750–751, February 2008. [8] S. Agassi, "The Future of Transportation," October, 2007. [Online] /. [Accessed: June, 16, 2008]. [9]S. M. Lukic, J. Cao, R. C. Bansal, F. Rodriguez, and A. Emadi, “Energy Storage Systems for Automotive Applications,” Trans. on Industrial Electronics , vol. 55, pp. 2258–2267, June 2008. [10]R. Ball, "Supercapacitors See Growth as Costs Fall," March, 2006. [Online]. Available: /Articles/2006/03/01/37810/supercap acitors-see-growth-as-costs-fall.htm [Accessed: June 16, 2008]. [11] R. F. Service, “New ‘Supercapacitor’ Promises to Pack More Electrical Punch,” Science, vol. 313, pp. 902, August 2006. [12] A. Schneuwly, “Charging Ahead” IEE Power Engineer, pp. 34-37, February/March 2005. [13] M. Ehsani, Y. Gao, S. E. Gay, A. Emadi, Modern Electric, Hybrid Electric, and Fuel Cell Vehicles . Boca Raton, FL: CRC Press, 2004. [14]J. M. Miller, “Will Market Accept Battery-UltracapacitorCombinations?” in Electronic Design Webinar: One Powerful Day[Online], October, 2008. Available: /events/. [15]Pininfarina Web Site, "The B0: the solution for a cleaner world."[Online]. Available: /index/storiaModelli/B0/The-B0 [Accessed:November 29, 2008]. [16]J. Schindall, “The charge of the Ultra-capacitors,” IEEE Spectrum ,November 2007. [Online]. Available:/nov07/5636 [Accessed: November 27, 2008]. [17] J. Larminie, J. Lowry, Electric Vehicle Technology Explained . England:John Wiley & Sons, 2003.[18] A. Emadi, Handbook of automotive power electronics and MotorDrives . Boca Raton, FL: CRC Press, 2005.[19]R. Lundin et al., “Electrodes with High Power and High Capacity forRechargeable Lithium Batteries,” Science, vol. 311, pp. 977–980, February 2006.[20]M. Pedram and Q. Wu, “Battery Powered Digital CMOS Design,”IEEE Trasactions on Very Large Scale Integration (VLSI) Systems, vol.10, pp. 601–607, October 2002.[21]A. Jossen, “Fundamentals of battery dynamics,” Journal of PowerSources, vol. 154, pp. 530–538, December 2005.[22] I. Buchmann, "How to prolong lithium based batteries," September,2006. [Online]. Available: /parttwo-34.htm [Accessed: June 16, 2008]. [23] I. Buchmann, "Discharge Methods," January, 2004. [Online].Available: /partone-16.htm[Accessed: July 10, 2008].[24] S. S. Choi and Hong S. Lim, “Factors that affect cycle-life and possibledegradation mechanisms of a Li-ion cell based on LiCoO2,” Journal ofPower Sources, vol. 111, pp. 130–136, May 2002. [25] P. Bentley, D. A. Stone, and N. Schofield, “The parallel combination ofa VRLA cell and supercapacitor for use as a hybrid vehicle peak powerbuffer,” Journal of Power Sources, vol. 147, pp. 288–294, March 2005.[26] A. Szumanowski, P. Piorkowski, and Y. Chang, “Batteries andUltracapacitors Set in Hybrid Propulsion System,” Inter. Conf. onPower Engineering, Energy and Electrical Drives , pp. 122–127, April 2007. [27] R. A. Dougal, S. Liu, and R. E. White, “Power and Life Extension ofBattery–Ultracapacitor Hybrids,” IEEE Trans. on Components and Packaging Technologies , vol. 25, pp. 120–131, March 2002. [28] S. Pay and Y. Baghzouz, “Effectiveness of Battery-Supercapacitor Combination in Electric Vehicles,” IEEE Bologna Powertech Conference , vol. 3, pp. 23–26, June 2003. [29] Vehicle Propulsion System by R. D. King, X. Huang, and G. R. Kilinski. (July 19, 2007). US Patent US 2007/0164693 A1. Available: /patents. [30] J. W. Dixon and M. E. Ortúzar “Ultracapacitors + DC-DC Converters in Regenerative Braking System,” IEEE AESS Systems Magazine, vol. 17, pp. 16–21, August 2002. [31] A. G. Simpson, G. R. Walker, “Lifecycle Costs of Ultracapacitors in Electric Vehicle Applications”, in IEEE 33rd Annual Power Electronics Specialists Conference, PESC 2002, vol. 2, pp. 1015-1020, June 2002. [32] R. Carter and A. Cruden, “Strategies for control of a battery/supercapacitor system in an electric vehicle,” IEEE SPEEDAM , pp. 727–732, June 2003. [33] A. A. Ferreira, J. A. Pomilio, G. Spiazzi, and L. A. Silva, “Energy Management Fuzzy Logic Supervisory for Electric Vehicle PowerSupplies System,” Trans. on Power Electronics , vol. 23, pp. 107–115, January 2008. [34] L. Rosario and P. C. K. Luk, “Applying Management Methodology toElectric Vehicles with Multiple Energy Storage Systems,” Proceedings of the Sixth International Conference on Machine Learning and Cybernetics, pp. 4223–4230, August 2007. [35] L. Solero, A. Lidozzi, and J. A. Pomilio, “Design of Multiple-InputPower Converter for Hybrid Vehicles,” IEEE Trans. on Power Electronics , vol. 20, pp. 1007–1016, September 2005. [36] S. M. Lukic, S. G. Wirasingha, F. Rodriguez, J. Cao, and A. Emadi, “Power Management of an Ultracapacitor/Battery Hybrid EnergyStorage System in an HEV,” Vehicle Power and Propulsion Conference , pp. 1–6, September 2006. [37] Venable Industries Web Site, “Current Mode Control,” [Online]. Available: /tp-05.pdf . [Accessed: November 29, 2008]. [38] R. M. Schupbach and J. C. Balda, “Comparing DC-DC Converters forPower Management in Hybrid Electric Vehicles,” Electric Machines and Drives Conference , vol. 3, pp. 1369–1374, June 2003 [39] R. D. Middlebrook and S. Cuk, “A general unified approach to modeling switching converter power stage,” in Proc. IEEE PESC, 1976, pp. 18–34. [40] H. D. Venable, “The k-factor: A New Mathematical Tool for Stability Analysis and Synthesis,” Proc. of Powercon 10, March 22-24, 1983, San Diego, USA.。

super string

super string
THE CONFORMAL BOOTSTRAP AND SUPER W -ALGEBRAS
´ M. Figueroa-O’Farrill Jose
and
Stany Schrans
Instituut voor Theoretische Fysica, Universiteit Leuven Celestijnenlaan 200 D, B–3001 Heverlee, BELGIUM
e-mail: fgbda11@blekul11.BITNET Onderzoeker I.I.K.W., Belgium; e-mail: fgbda31@blekul11.BITNET
§1
Introduction Extended conformal and superconformal algebras have received a great deal
which exist only for specific values of the central charge, we find a new non-linear algebra (super W2 ) generated by a spin 2 superprimary which is associative for all values of the central charge. Furthermore, the spin 3 extension is argued to be the symmetry algebra of the m = 6 super Virasoro unitary minimal model, by exhibiting the (A7 , D4 )-type modular invariant as diagonal in terms of extended characters.

共轭聚合物 有机半导体 英文

共轭聚合物 有机半导体 英文

共轭聚合物有机半导体英文英文回答:Conjugated polymers and organic semiconductors are a class of materials that have both semiconducting and polymeric properties. They are typically composed of alternating single and double bonds along the polymer backbone, which allows for the delocalization of electrons and the formation of pi-conjugated systems. This delocalization results in a number of unique properties, including high electrical conductivity, low optical bandgaps, and the ability to absorb and emit light.Conjugated polymers and organic semiconductors have a wide range of potential applications in electronic devices, such as solar cells, light-emitting diodes (LEDs), and transistors. They are also being investigated for use in sensors, batteries, and other energy-related applications.中文回答:共轭聚合物和有机半导体是一类既具有半导体特性又具有聚合物性质的材料。

电子科学与技术专业外语翻译

电子科学与技术专业外语翻译

Figure 1-1】图1-1 给出了在三种材料中一些重要材料相关的电阻值(相应电导率ρ≡1/δ)。

However】然而锗不太适合在很多方面应用因为温度适当提高后锗器件会产生高的漏电流。

For a given】对于给定的半导体,存在代表整个晶格的晶胞,通过在晶体中重复晶胞组成晶格。

This structure】这种结构也属于金刚石结构并且视为两个互相贯穿的fcc亚点阵结构,这个结构具有一个可以从其它沿立方对角线距离的四分之一处移动的子晶格(位移/4)Most of】多数Ⅲ-Ⅴ半导体化合物具有闪锌矿结构,它与金刚石有相同结构除了一个有Ⅲ族Ga原子的fcc子晶格结构和有Ⅴ族As原子的另一个。

.For example】例如,孤立氢原子的能级可由玻尔模型得出:式中m0 代表自由电子质量, q是电荷量,ε0是真空中电导率, h 是普朗克常数,n 是正整数称为主量子数。

Further decrease】空间更多减少将导致能带从不连续能级失去其特性并合并起来,产生一个简单的带。

As shown】如图1-4(a)能带图所示,有一个大带隙。

注意到所有的价带都被电子充满而导带中能级是空的As a consequence】结果,半满带的最上层电子以及价带顶部电子在获得动能(外加电场)时可以运动到与其相应的较高能级上At room】在室温和标准大气压下,带隙值硅(1.12ev )砷化镓(1.42ev)在0 K带隙研究值硅(1.17ev )砷化镓(1.52ev)Thus】于是,导带的电子密度等于把N(E)F(E)dE从导带底Ec (为简化起见设为0)积分到导带顶EtopFigure 1-5】图1-5从左到右示意地表示了本征半导体的能带图, 态密度(N(E)~E1/2), 费米分布函数, 本征半导体的载流子浓度In an extrinsi c】在非本征半导体中,一种载流子类型增加将会通过复合减少其它类型的数目;因此,两种类型载流子的数量在一定温度下保持常数For shallow】对硅和砷化镓中的浅施主,在室温下,常常有足够的热能电离所有的施主杂质,给导带提供等量的电子We shal l】我们先讨论剩余载流子注入的概念。

清华高等研究院拓扑绝缘体系列讲座3

清华高等研究院拓扑绝缘体系列讲座3

Measure 012034 112134 / 2
t Braid
Create
012034
S–TI–S Line Junction
A 1D “wire” for Majorana Fermions
E 0
W<<x0
qxx0
0 0
0<<
-k

- Required minus sign is provided by Berry‟s phase due to Dirac Point

• Nontrivial ground state supports Majorana

fermion bound states at vortices
Dirac point
↑ k
Majorana Bound States on Topological Insulators
1. h/2e vortex in 2D superconducting state E
h/2e
0
TI
† E
† 0
0
† E
E
Quasiparticle Bound state at E=0
t1 , t2 2t
t1>t2 trivial SC
1i t1 2i t2
t1<t2 topological SC
Unpaired Majorana Fermion at end
2D topological superconductor (broken T symmetry)
Bulk-Boundary correspondence: n = # Chiral Majorana Fermion edge states

Current lead quenching assembly

Current lead quenching assembly

专利名称:Current lead quenching assembly发明人:Florian Steinmeyer,Keith White申请号:US10496135申请日:20021120公开号:US08650888B2公开日:20140218专利内容由知识产权出版社提供专利附图:摘要:The present invention relates to a cryostat having a service neck for access to a superconducting magnet. In many cryogenic applications components, e.g.superconducting coils for magnetic resonance imaging (MRI), superconductingtransformers, generators, electronics, are cooled by keeping them in contact with avolume of liquefied, the whole cryogenic assembly being known as a cryostat. In order to operate a superconducting magnet, it must be kept at a temperature below its superconducting transition temperature. A cryostat must provide access to the vessel containing the liquefied helium for the initial cooling of the magnet to its low operating temperature, for periodic refilling of systems where there is a loss of helium, and provide sufficient access whereby to enable operation and maintenance of the magnet. The present invention seeks to provide an access neck to a cryostat such as helium vessel with a minimum heat load and accordingly provides a cryostat assembly, wherein a service neck comprising at least one positive and one negative current lead is arranged such that one of the leads is formed by the neck tube wall and the space between a neck tube wall and the second current lead forms a gas path for venting and/or filling or other services.申请人:Florian Steinmeyer,Keith White地址:Witney GB,Oxon GB国籍:GB,GB代理机构:Crowell & Moring LLP更多信息请下载全文后查看。

Connecting multiple microelectronic elements with

Connecting multiple microelectronic elements with

专利名称:Connecting multiple microelectronicelements with lead deformation发明人:Tony Faraci,Thomas H. Distefano,John W.Smith申请号:US09712631申请日:20001114公开号:US06365436B1公开日:20020402专利内容由知识产权出版社提供专利附图:摘要:A plurality of separate semiconductor chips, each having a contact-bearingsurface and contacts on such surface, are disposed in an array so that the contact-bearingsurfaces face and define a first surface of the array. A flexible, dielectric sheet with terminals thereon overlies the first or contact bearing surface of the semiconductor chips. Elongated leads are disposed between the dielectric element and the semiconductor chips. Each lead has a first end connected to a terminal on the dielectric element, and a second end connected to a contact on a semiconductor chip in the array. All of the leads are formed simultaneously by moving the dielectric element and the array relative to one another to simultaneously displace all of the first ends of the leads relative to all of the second ends. The dielectric element is subdivided after the forming step so as to leave one region of the dielectric element connected to each chip and thereby form individual units each including one chip, or a small number of chips.申请人:TESSERA, INC.代理机构:Lerner, David, Littenberg, Krumholz & Mentlik, LLP更多信息请下载全文后查看。

英文博士后专家推荐信

英文博士后专家推荐信

英文博士后专家推荐信致申请人(to the appicant)申请人必须向申请做博士后单位提交两份《专家推荐信》.申请人在下栏中填好自己的姓名和所申请的单位名称后,将此表分送两位了解和熟悉自己的专家(其中一位是申请人的博士生指导教师).为方便专家填写推荐意见后将其退回申请人,请申请人在下面的栏目中详细写明自己的通信地址.applicant should have two letters or recommendation submitted from professors or others who can assess the quality of his/her academic performance ,capability and potential of research. please ask to have these the letters sent directly to the institution to which you are applying returned to you with the envelope sealed.(以下栏目由申请人填写,this section to be filled in by the applicant)申请人姓名申请人电话(name or applicant)(telephone number)申请人通信地址:(institution of applicant)(address of applicant)申请做博士后的单位(institution to which the applicant is applying) (address of the institution)致推荐人 to the referee非常感谢您愿意为申请人做推荐人.请您在背面栏中对申请人以往科研工作及学术水平,科研工作能力等作出评价,并按上面的地址将本《专家推荐信》退回给申请人.you are named by the applicant as a referee for his/her application of postdocgoral position in the listed institution . we would appreciate your opinion of his /her academic performance capabitity and potential in research work..please directly send this form to the institution to which he/she is applying or return it to the applicant with envelope sealed.if you prefer to write a personal letter rather than this form ,please feel free to do so and attach this form to you letter.推荐人姓名(name of referee)推荐人职务或职称(position and tithe)推荐人工作单位(institution and address)推荐人与申请人的关系(relationship with the applicant)推荐人电话推荐人传真(telephone number) (facsimile)推荐意见(recommend ation)推荐人签字推荐日期(signature) (date)英文博士后专家推荐信Dear Professor ******,I am glad to receive your letter and the good news to Mr ******. As his supervisor, I have known him for more than five years, and I am pleased to give you a formal statement.Mr. ****** graduated from ****** University and began his Ph.D. study under my supervision in ****** in ******. His research work mainly focused on ******. He was proficient in ******. Due to his hard work, a lot of progresses have been made in this years. I know that he have acquired a broad and strong experience in ******, especially in ****** study.In my close contact with him, I was deeply impressed by his strong interest and enthusiasm in scientific research. Besides, he has fine ideas and can design reasonable plans for his research. From my observation,he can undergo a new research project independently and quickly because of his mastery of ****** techniques and quickly taking in new techniques.Furthermore, he is also modest and easy to get along with, he showed high respecting to teachers or advisors. He energetically participated in some common affairs in the lab. These characters will allow him to adapt to a new environment rapidly.Mr. ****** is one of the most studious and promising fellows among my students. I recommend him to you without any hesitation and expected that the postdoctoral experience in your laboratory will provide further refinement and specific training for him.Sincerely yours,******Professor****** UniversityCity, China。

超分子共晶强化技术

超分子共晶强化技术

超分子共晶强化技术Supramolecular Cocrystallization Strengthening Technology超分子共晶强化技术Supramolecular cocrystallization strengthening technology is an innovative material processing technique that involves the formation of ordered, crystalline structures through the interaction of two or more molecular species.超分子共晶强化技术是一种创新的材料处理技术,它涉及通过两种或多种分子物种的相互作用形成有序、晶体结构。

This technology utilizes the principles of supramolecular chemistry to engineer materials with enhanced physical and mechanical properties.该技术利用超分子化学的原理来制造具有增强物理和机械性能的材料。

The formation of cocrystals allows for the creation of composite materials with unique combinations of properties, such as improved hardness, toughness, and thermal stability.共晶体的形成允许创建具有独特性能组合的复合材料,如提高硬度、韧性和热稳定性。

The key to successful supramolecular cocrystallization lies in the careful selection of molecular components that can engage in strong intermolecular interactions.成功实现超分子共晶化的关键在于精心选择能够产生强烈分子间相互作用的分子组分。

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a rXiv:h ep-th/01321v123M ar21Contact superconformal algebras and their representationsElena Poletaeva1.-A superconformal algebra is a complex Z -graded Lie superalgebra G =⊕i G i ,such that 1)G is simple,2)G contains the centerless Virasoro algebra i.e.the Lie algebra with the basis L n (n ∈Z )and commutation relations [L m ,L n ]=(m −n )L m +n as a subalgebra,3)G i ={x ∈G |[L 0,x ]=ix }and dim G i <C ,where C is a constant indepen-dent of i [1,2].To describe superconformal algebras,consider the Grassmann algebra Λ(N )in N variables θ1,...,θN .Let Λ(1,N )=C [t,t −1]⊗Λ(N )be an associative superalgebra with natural multiplication and with the following parity of gen-erators:p (t )=¯0,p (θi )=¯1for i =1,...,N .Let W (N )be the Lie superalgebra of all derivations of Λ(1,N ).Every D ∈W (N )is represented by a differential operator,D =f∂t +N i =1f i ∂i ,where f,f i ∈Λ(1,N ).(1)The main examples of superconformal algebras are the following three series:the series W (N )(N ≥0),the series S ′(N,α)(N ≥2)of one-parameter families of deformations of the divergence-free subalgebra of W (N ),and the series of contact superalgebras K ′(N )(N ≥0)([1,2]).By definition,K (N )={D ∈W (N )|D Ω=f Ωfor some f ∈Λ(1,N )},(2)where Ω=dt − N i =1θi dθi is a differential 1-form,which is called a contact form [1,2,3].There is one-to one correspondence between the differential operators D ∈K (N )and the functions f ∈Λ(1,N ).The correspondence f ↔D f is givenbyD f =∆(f )∂t +∂t (f )Ni =1θi ∂i +(−1)p (f )N i =1∂i (f )∂i ,(3)where ∆(f )=2f − Ni =1θi ∂i (f ).The Lie bracket in K (N )is identified withthe contact bracket in Λ(1,N ):{f,g }=∆(f )∂t (g )−∂t (f )∆(g )+(−1)p (f )N i =1∂i (f )∂i (g ),(4)so that [D f ,D g ]=D {f,g }.The superalgebras K (N )are known to the physicists as the SO (N )superconformal algebras [4].They are simple,except when N =4.1If N=4,then the derived superalgebra K′(4)=[K(4),K(4)]is a simple ideal in K(4)of codimension one defined from the exact sequence→0.(5) 0→K′(4)→K(4)→C D t−1θ1θ2θ3θ4There exists no nontrivial2-cocycles on K′(N)if N>4.If N≤3,then there exists,up to equivalence,one nontrivial2-cocycle[1].LetˆK′(N)be the corresponding central extension of K′(N).ˆK′(1)is isomorphic to the Neveu-Schwarz algebra,andˆK′(2)is isomorphic to the so-called N=2superconformal algebra(see references in[8]).The superalgebra K′(4)has3independent central extensions[1].Note that K′(4)is spanned by16field;it is the largest among superconformal algebras admitting central extensions and,therefore is one of the most interesting ones.The superalgebra K′(N),where N≥0,has a two-parameter family of repre-sentations in the superspace spanned by2Nfields.In fact,K′(N)acts in a nat-ural way on the superspace of“densities”of the form tαgΩβ,where g∈Λ(1,N), andαandβarefixed complex numbers[1]:D f(tαgΩβ)=(D f(tαg)+(−1)p(f)p(g)2βtαg∂t(f))Ωβ.(6) The superalgebra K′(4)has in addition a one-parameter family of spinor-like tiny irreducible representations realized on just4fields instead of the usual16. The construction of this representation is based on the embedding of a nontrivial central extension of K′(4)into the Lie superalgebra of pseudodifferential sym-bols on the supercircle S1|2[8].Note that there is no analogous representation of K′(2N)realized on2Nfields for N≥3.2.-The Poisson algebra P of pseudodifferential symbols on the circle is formed by the formal series A(t,ξ)= n−∞a i(t)ξi,where a i(t)∈C[t,t−1], and the variableξcorresponds to∂t.The Poisson bracket is defined as follows: {A(t,ξ),B(t,ξ)}=∂ξA(t,ξ)∂t B(t,ξ)−∂t A(t,ξ)∂ξB(t,ξ).(7) The Poisson algebra P has a well-known deformation P h,where h∈]0,1].The associative multiplication in the vector space P is determined as follows:A(t,ξ)◦h B(t,ξ)= n≥0h nLetΘh(N)be an associative superalgebra with generatorsθ1,...,θN,∂1,...,∂N and relations:θiθj=−θjθi,∂i∂j=−∂j∂i,∂iθj=hδi,j−θj∂i.Let P h(N)= P h⊗Θh(N)be an associative superalgebra with the product1(A⊗X)(B⊗Y)=∂kˆx A(t,ξ)x−k,(11)k(see[5]).Then c x(A⊗X,B⊗Y)=the coefficient of t−1ξ−1θ1...θN∂1...∂N in the expression for([log x,A]◦h=1B)⊗(XY),where A,B∈P h=1,and X,Y∈Θh=1(N).There exists an embedding for N≥0:K(2N)⊂P(N).(12) To explain this embedding,note that in general,a Lie algebra of contact vector fields can be realized as a subalgebra of Poisson algebra[6].In particular,the Lie algebra V ect(S1)of smooth vectorfields on the circle can be embedded into the Poisson algebra of functions on the cylinder˙T∗S1=T∗S1\S1with the removed zero section.One can introduce the Darboux coordinates(q,p)=(t,ξ)on this manifold.The symbols of differential operators are functions on˙T∗S1which are formal Laurent series in p with coefficients periodic in q.Correspondingly, they define Hamiltonian vectorfields on˙T∗S1[5].Then V ect(S1)is realized as the subalgebra of the Lie algebra of Hamiltonian vectorfields,consisting of the fields with Hamiltonians which are homogeneous of degree1.This condition holds in general,if one considers the symplectification of a contact manifold[6], and it can be generalized to the supercase.Let P(N)=⊕j∈Z P j(N)be the Z-grading of the associative superalgebra P(N)defined by degξ=deg¯θi=1,deg t=degθi=0for i=1,...,N.With respect to the Poisson bracket,{P j(N),P k(N)}⊂P j+k−1(N).Then P1(N)isa subalgebra of P(N),and it is isomorphic to K(2N)[8].3.-A natural question is whether there exists an embedding of K(2N)into P h(N).If N=1,then P1(1)=W(1)∼=K(2).Thus,clearly,K(2)⊂P h(1).If N=2,then K′(4)⊂P(2)is defined from the exact sequence0→K′(4)→P1(2)→C t−1ξ−1θ1θ2¯θ1¯θ2→0.(13)3The2-cocycles on K′(4)in this realization are defined as follows.Letc(t nξ,t kξ−1θ1θ2¯θ1¯θ2)=Aδn+k,0,n=1,c(t nξθi,t kξ−1θj¯θ1¯θ2)=A(−1)jδn+k,0,i=j,(14)c(t nξθ1θ2,t kξ−1¯θ1¯θ2)=Aδn+k,0,c(t n¯θi,t kθ1θ2¯θj)=B(−1)jδn+k,0,i=j,c(t nθ1¯θi,t kθ2¯θj)=B(−1)iδn+k,0,i=j,c(t nξ−1θ1θ2¯θ1¯θ2,t kθi¯θi)=Cδn+k+1,0,n=−1,c(t nξ−1θi¯θ1¯θ2,t kθ1θ2¯θi)=−Cδn+k+1,0,2Cc(t nξ−1θ1θ2¯θ1¯θ2,t kξ−1θ1θ2¯θ1¯θ2)=−The superalgebraˆK′(4)⊂P h(2)is spanned by W(2)together with fourfields F i n,h:F0n,h=(ξ−1◦h t n)∂1∂2,F i n,h=(ξ−1◦h t n)∂1∂2θi,i=1,2,(18)hF3n,h=(ξ−1◦h t n)∂1∂2θ1θ2+t m+µ,v1m=t m+µθ1,v2m=t m+µθ2,v3m=t m+µθ1θ2.(19) m+µEvery D∈W(2)is a derivation of Vµ.To define an action of F i n,1on Vµ,one can interpretξ−1as the anti-derivative on the space of functions tµC[t,t−1]. ThenF0n,1(v3m)=−v0m+n+1,F1n,1(v2m)=−v0m+n+1,F2n,1(v1m)=v0m+n+1,(20)1F3n,1(v i m)=[5]B.Khesin,V.Lyubashenko,and C.Roger,Extensions and contractions of the Lie algebra of q-pseudodifferential symbols on the circle,J.Funct.Anal. 143,(1997)55-97.[6]V.I.Arnold,Mathematical Methods of Classical Mechanics,Springer-Verlag,New York,1989.[7]K.Schoutens,O(N)-extended superconformalfield theory in superspace, Nucl.Phys.B295,(1988)634-652.[8]E.Poletaeva,A spinor-like representation of the contact superconformal algebra K′(4),J.Math.Phys.42,(2001)526-540;hep-th/0011100and refer-ences therein.Elena PoletaevaCentre for Mathematical SciencesMathematics,Lund UniversityBox118,S-22100Lund,Swedenelena@maths.lth.se6。

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