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The influence of local heating by nonlinear pulsed laser excitation on the transmission characteristics of a ZnO nanowire waveguide
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2009 Nanotechnology 20 095702
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IOP P UBLISHING N ANOTECHNOLOGY Nanotechnology20(2009)095702(6pp)doi:10.1088/0957-4484/20/9/095702
The influence of local heating by nonlinear pulsed laser excitation on the transmission characteristics of a ZnO nanowire waveguide
Tobias Voss1,2,5,Geoffry T Svacha1,2,Eric Mazur1,2,
Sven M¨uller3and Carsten Ronning4
1Department of Physics,Harvard University,9Oxford Street,Cambridge,MA02138,USA
2School of Engineering and Applied Sciences,Harvard University,9Oxford Street,
Cambridge,MA02138,USA
3II.Physikalisches Institut,University of G¨o ttingen,G¨o ttingen,Germany
4Institute of Solid State Physics,University of Jena,Jena,Germany
Received24October2008,infinal form27October2008
Published11February2009
Online at /Nano/20/095702
Abstract
We perform a transmission experiment on a ZnO nanowire waveguide to study its transmission
characteristics under nonlinear femtosecond-pulse excitation.Wefind that both the second
harmonic and the photoluminescence couple into low-order waveguide modes of the nanowires
but with distinctly different efficiencies.We measure the transmission spectrum of a single ZnO
nanowire waveguide for near-UV light generated by interband recombination processes.The
transmission spectrum allows us to determine the absorption edge of the excited nanowire and
to study the temperature profile of the nanowire under femtosecond-pulse excitation.
(Somefigures in this article are in colour only in the electronic version)
1.Introduction
Zinc oxide(ZnO)is a non-toxic,wide-band gap semiconductor used in electronic and near-UV optoelectronic devices such as sensors,light emitters and detectors[1,2].ZnO has
received much attention because it is easy to fabricate large quantities of high-quality ZnO nanowires with diameters of a few hundred nanometers and lengths of several tens of micrometers[3–6].Such nanowires are transparent throughout the visible spectral region,due to the large room temperature band gap E gap=3.37eV of ZnO[1,7].Furthermore, because of the large refractive index of ZnO across the visible
spectrum(n>2)[7],ZnO nanowires are excellent low-
loss sub-wavelength waveguides.The large index provides tight optical confinement for low-order modes and also results in a large acceptance angle for coupling light into the nanowire waveguide.Although the hexagonal cross-section of the nanowires influences the intensity profile of higher-order modes,the lowest-order mode exhibits almost circular 5Present address:Institute of Solid State Physics,University of Bremen, Bremen,Germany.symmetry inside the nanowire[8].The semiconducting properties of the material permit the fabrication of nanowire devices[3,4,9–11]in which gain and refractive index can be electrically modulated.However,efficient and reliable p-type doping of ZnO remains an unsolved problem hindering the design of electrically operated nanowire devices[2].
Because ZnO is a highly polar semiconductor it is frequently used for frequency doubling of intense ultrashort laser pulses[12].Several studies report on the nonlinear coefficients[12–16]of c-plane and a-plane ZnO thinfilms,and on second-harmonic generation[17]and polariton effects[18] in ZnO nanowires.
In this work,we show that nonlinear excitation of individual ZnO nanowires with ultrashort laser pulses excites waveguide modes in the nanowires.We study the coupling and transmission efficiency of the photoluminescence and second-harmonic generation in the nanowire.We perform transmission measurements on a single nanowire and determine the absorption edge of the highly excited semiconductor material. The absorption edge allows us to deduce an upper limit for the local temperature of the nanowire close to the excitation spot.