M54HC08F1R中文资料
SN74HC08DRG4中文资料
• Typical tpd = 8 ns • ±4-mA Output Drive at 5 V
• Low Power Consumption, 20-µA Max ICC
• Low Input Current of 1 µA Max
SN54HC04...J OR W PACKAGE SN74HC04...D, DB, N, NS, OR PW PACKAGE
元器件交易网
SN54HC08, SN74HC08 QUADRUPLE 2-INPUT POSITIVE-AND GATES
SCLS081F – DECEMBER 1982 – REVISED JANUARY 2007
FEATURES
• Wide Operating Voltage Range of 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads
TA –40°C to 85°C –55°C to 125°C
PDIP – N SOIC – D
SOP – NS SSOP – DB
TSSOP – PW CDIP – J CFP – W LCCC –FK
ORDERING INFORMATION
PACKAGE (1)
ODERABLE PART NUMBER
(TOP VIEW)
SN54HC04...FK PACKAGE (TOP VIEW)
4B
VCC
NC
1A
1B
1A 1 1B 2 1Y 3 2A 4 2B 5 2Y 6 GND 7
14 VCC 13 4B 12 4A 11 4Y 10 3B 9 3A 8 3Y
3 2 1 20 19
迅捷无线路由器说明书
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版权所有，不得翻印目录第1章产品概述 (1)1.1.产品简介 (1)1.2.特性和规格说明 (1)1.2.1.主要特性 (1)1.2.2.规格 (3)第2章硬件描述 (4)2.1.面板布置 (4)2.1.1.前面板 (4)2.1.2.后面板 (5)2.2.复位 (5)2.3.系统需求 (6)2.4.安装环境 (6)第3章配置指南 (7)3.1.启动和登录 (7)3.2.运行状态 (7)3.3.设置向导 (9)3.4.网络参数 (9)N口设置 (9)3.4.2.WAN口设置 (10)3.4.3.MAC地址克隆 (18)3.5.无线参数 (19)3.5.1.基本设置 (19)3.5.2.MAC地址过滤 (24)3.5.3.主机状态 (26)3.6.DHCP服务器 (26)3.6.1.DHCP服务 (26)3.6.2.客户端列表 (27)3.6.3.静态地址分配 (28)3.7.转发规则 (29)3.7.1.虚拟服务器 (29)3.7.2.特殊应用程序 (31)3.7.3.DMZ主机 (32)3.7.4.UPnP设置 (33)3.8.安全设置 (34)3.8.1.防火墙设置 (34)3.8.2.IP地址过滤 (35)3.8.3.域名过滤 (37)3.8.4.MAC地址过滤 (39)3.8.5.远端WEB管理 (40)3.8.6.高级安全设置 (41)3.9.路由功能 (43)3.9.1.静态路由表 (43)3.10.动态DNS (44)3.11.系统工具 (46)3.11.1.时间设置 (47)3.11.2.软件升级 (48)3.11.3.恢复出厂设置 (48)3.11.4.备份和载入配置 (49)3.11.5.重启路由器 (51)3.11.6.修改登录口令 (51)3.11.7.系统日志 (52)3.11.8.流量统计 (52)附录A FAQ (54)附录B IE浏览器设置 (57)第1章 产品概述1.1. 产品简介首先感谢您购买FW54R 无线宽带路由器！FW54R 无线宽带路由器是专为满足小型企业、办公室和家庭办公室的无线上网需要而设计，它功能实用、性能优越、易于管理。
SN54HC08中文资料
PACKAGING INFORMATIONOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)5962-8404701VCA ACTIVE CDIP J141None Call TI Level-NC-NC-NC 5962-8404701VDA ACTIVE CFP W141None Call TI Level-NC-NC-NC 84047012A ACTIVE LCCC FK201None Call TI Level-NC-NC-NC 8404701CA ACTIVE CDIP J141None Call TI Level-NC-NC-NC 8404701DA ACTIVE CFP W141None Call TI Level-NC-NC-NC JM38510/65203B2A ACTIVE LCCC FK201None Call TI Level-NC-NC-NC JM38510/65203BCA ACTIVE CDIP J141None Call TI Level-NC-NC-NC JM38510/65203BDA ACTIVE CFP W141None Call TI Level-NC-NC-NC SN54HC08J ACTIVE CDIP J141None Call TI Level-NC-NC-NCSN74HC08D ACTIVE SOIC D1450Pb-Free(RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIMSN74HC08DR ACTIVE SOIC D142500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMSN74HC08DT ACTIVE SOIC D14250Pb-Free(RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIMSN74HC08N ACTIVE PDIP N1425Pb-Free(RoHS)CU NIPDAU Level-NC-NC-NC SN74HC08N3OBSOLETE PDIP N14None Call TI Call TISN74HC08NSR ACTIVE SO NS142000Pb-Free(RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIMSN74HC08PW ACTIVE TSSOP PW1490Pb-Free(RoHS)CU NIPDAU Level-1-250C-UNLIMSN74HC08PWLE OBSOLETE TSSOP PW14None Call TI Call TISN74HC08PWR ACTIVE TSSOP PW142000Pb-Free(RoHS)CU NIPDAU Level-1-250C-UNLIMSN74HC08PWT ACTIVE TSSOP PW14250Pb-Free(RoHS)CU NIPDAU Level-1-250C-UNLIM SNJ54HC08FK ACTIVE LCCC FK201None Call TI Level-NC-NC-NC SNJ54HC08J ACTIVE CDIP J141None Call TI Level-NC-NC-NC SNJ54HC08W ACTIVE CFP W141None Call TI Level-NC-NC-NC SNV54HC08J ACTIVE CDIP J14None Call TI Call TISNV54HC08W ACTIVE CFP W14None Call TI Call TI(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan-May not be currently available-please check /productcontent for the latest availability information and additional product content details.None:Not yet available Lead(Pb-Free).Pb-Free(RoHS):TI's terms"Lead-Free"or"Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all6substances,including the requirement that lead not exceed0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Green(RoHS&no Sb/Br):TI defines"Green"to mean"Pb-Free"and in addition,uses package materials that do not contain halogens, including bromine(Br)or antimony(Sb)above0.1%of total product weight.(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.元器件交易网元器件交易网IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,enhancements, improvements, and other changes to its products and services at any time and to discontinueany product or service without notice. Customers should obtain the latest relevant information before placingorders and should verify that such information is current and complete. All products are sold subject to TI’s termsand conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale inaccordance with TI’s standard warranty. T esting and other quality control techniques are used to the extent TIdeems necessary to support this warranty. Except where mandated by government requirements, testing of allparameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design. Customers are responsible fortheir products and applications using TI components. T o minimize the risks associated with customer productsand applications, customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right,copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or processin which TI products or services are used. Information published by TI regarding third-party products or servicesdoes not constitute a license from TI to use such products or services or a warranty or endorsement thereof.Use of such information may require a license from a third party under the patents or other intellectual propertyof the third party, or a license from TI under the patents or other intellectual property of TI.Reproduction of information in TI data books or data sheets is permissible only if reproduction is withoutalteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproductionof this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable forsuch altered documentation.Resale of TI products or services with statements different from or beyond the parameters stated by TI for thatproduct or service voids all express and any implied warranties for the associated TI product or service andis an unfair and deceptive business practice. TI is not responsible or liable for any such statements.Following are URLs where you can obtain information on other Texas Instruments products and applicationsolutions:Products ApplicationsAmplifiers Audio /audioData Converters Automotive /automotiveDSP Broadband /broadbandInterface Digital Control /digitalcontrolLogic Military /militaryPower Mgmt Optical Networking /opticalnetworkMicrocontrollers Security /securityTelephony /telephonyVideo & Imaging /videoWireless /wirelessMailing Address:Texas InstrumentsPost Office Box 655303 Dallas, Texas 75265Copyright 2005, Texas Instruments Incorporated。
HM54-44R42HLF中文资料
元器件交易网
Electrical Characteristics @ 25°C
2007/08 EDITION MAGNETIC COMPONENTS SELECTOR GUIDE
Dim. A (Inch/mm)
.099/2.5 .099/2.5 .099/2.5 .099/2.5 .126/3.2 .126/3.2 .114/2.9 .114/2.9 .099/2.5 .099/2.5 .126/3.2 .126/3.2
Dim. P (Inch/mm)
.284/7.2 .228/5.8 .335/8.5 .256/6.5 .386/9.8 .284/7.2 .370/9.4 .322/8.2 .370/9.4 .322/8.2 .386/9.8 .362/9.2
Outline Dimensions (Inch/mm)
Figure 1 (Vertical Mount) Figure 2 (Horizontal Mount)
.142±.020 3.6±0.5
P± .020 0.5
Body Style
Vertical Mount
Horizontal Mount
Fig. 1 1 1 1 1
Mounting Style V= Vertical Mounting H= Horizontal Mounting
30
MAGNETIC COMPONENTS SELECTOR GUIDE 2007/08 EDITION
We reserve the right to change specifications without prior notice.
{售后服务}某某某最新浪潮服务器产品介绍
{售后服务}某某某最新浪潮服务器产品介绍目录1.浪潮NP3020M2服务器22.浪潮NP5020M3服务器53.浪潮NP5540M3服务器84.浪潮NP5580M3服务器125.浪潮NF5140M3服务器166.浪潮NF5240M3服务器217.浪潮NF5270M3服务器248浪潮NF5280M3服务器279.浪潮NF8560M2服务器3010.浪潮NF8520服务器3311.浪潮TS850服务器3612.浪潮NX5760M3刀片服务器3813.浪潮NX5440M3刀片服务器4214.浪潮天梭TS15.浪潮天梭TS16.浪潮天梭TS17.浪潮安全服务器NF5285P25118.浪潮英信SA52245419.浪潮英信SA52455620.浪潮英信SA52435821.浪潮英信SA5212L6122.浪潮英信SA5212S6323.浪潮天梭TS8650G36624.浪潮云海Smartcloud集装箱数据中心6725.浪潮睿捷服务器套件6926.浪潮海量存储系统软件－业务连续保护模块（BCP）71服务器产品介绍1.浪潮NP3020M2服务器产品概述浪潮英信NP3020M2是一款专为中小型应用设计的单路入门级服务器产品，采用全新的平台架构，相比与浪潮上一代产品性能提升40%，可从容的应对各种新业务带来的压力，同时还具有出色的扩展性，能够伴随着业务的增长而增长。
针对中小型应用的特点，NP3020M2具有出色的静音和低辐射设计，更适合办公室环境使用，是中小型信息化建设中入门级服务器的首选。
产品特点1、支持英特尔最新XeonE3-1200系列处理器，大幅提升后的处理器主频，带来更少的延迟和更高计算性能；2、采用支持纠错代码(ECC)的内存，提供比台式机更高水平的数据完整性、可靠性和系统正常运行时间，有效提供数据容错功能，降低系统宕机概率，从容面对不断上涨的业务；3、良好的散热设计，更好的保证机箱内部气流的通畅，确保关键部件正常工作，避免因局部散热不利造成的系统宕机隐患；4、360°静音设计，通过风扇及机箱的优化设计削弱噪音源，智能调控散热能力，从而大幅降低系统噪音，人性化设计全面贯穿健康理念；5、多达6个PCI扩展槽，支持传统PCI及高速PCI-E2.0X16，保护用户现有的IT 设备投资，使用户短期的投资获得长期的超值回报；6、拥有8块硬盘的扩展空间，可选SATA、SAS存储配置，为客户提供更强大的数据存储选择，并提供充足的未来扩展空间产品规格型号NP3020M2处理器英特尔®至强®处理器E3-1200系列,英特尔®奔腾®处理器G850\G860\G620,英特尔®酷睿®处理器I3-2100系列高速缓存3M/8M，随处理器型号不同而不同芯片组英特尔®C202芯片组内存4个内存插槽，支持DDR3ECCunbuffered1066/1333MHz，支持双通道读取硬盘控制器集成6口SATA控制器RAID支持Intelhostraid0,1,10,5(仅windows系统，不支持windows2000及之前版本)硬盘数量标配支持2块SATA硬盘，通过扩展配件最大可支持到8块SATA硬盘I/O扩展槽2个PCI32bit/33MHz；1个PCI-Ex8；2个PCI-Ex1；1个PCI-Ex16集成I/O端口前置：2个USB接口后置：1个标准VGA接口，2个PS/2接口，1个串口，2个RJ45网络接口内置：1个串口，1个USB接口网络控制器支持高性能双千兆网卡，支持网络唤醒、网络冗余、负载均衡等网络高级特性电源300W单电显卡主板集成显示控制器光驱标准DVD光驱软驱可选USB接口的虚拟软驱管理功能支持浪潮睿捷V5.0服务器管理、部署软件支持操作系统MicrosoftServer2003(SP1/SP2)(X32/X64) MicrosoftServer2008(X32、X64) WindowsXPProfessional32bit/64bitWindowsVista32bit/64bit不同配置下操作系统支持能力不同，详情请咨询浪潮公司工作环境温度5℃～35℃电源电压180V~264V（单电）50HZ，90V~264V（双电）50HZ国际认证ISO9001国际质量管理体系ISO14001国际环境管理体系机箱200mm(W)x435mm(H)x510mm(D)参考重量25kg2.浪潮NP5020M3服务器产品概述浪潮英信NP5020M3是浪潮专为中小型企业、政府、教育等客户量身打造的一款双路塔式服务器，完美的静音设计紧凑小巧的内部结构和外观非常特别适合需要小型机箱的零售店或小型办公室环境，采用最新的平台架构及处理器，相对于浪潮上一代产品整体性能提升40%，特别适合像电子政务、电子邮件、文件、打印、OA、ERP、CRM、多媒体教学、中小型数据库、中小型工作站、大型网络的子网系统等。
第2章 Freescale HC(S)08系列单片机概述
第2章Freescale HC08/S08/RS08 MCU概述Freescale的08系列单片机由于其稳定性高、开发周期短、成本低、型号多种多样、兼容性好而被广泛应用。
本章概要介绍08系列单片机的类型、基本结构，并从总体上阐述其性能特点。
主要内容有：在介绍08系列单片机的命名规则和资源状况的基础上，分别以MC908GP32、MC9S08GB60及MC9RS08KA2为例讲述HC08系列、HCS08系列及RS08系列单片机的基本结构和特点。
了解这些基本知识，不仅可以为实际开发应用中的单片机选型提供参考，也对后续章节的学习有很大的帮助。
本书以GP32为主要芯片阐述嵌入式系统基本硬件与软件原理，2.2节讨论的GP32引脚功能、硬件最小系统及GP32的存储器框图是重点掌握的内容。
硬件最小系统是芯片运行的基本条件，应该对此有清晰的理解。
对于GP32不具备的功能，本书将使用其他芯片进行阐述，但编程语言体系是相同的。
2.1 08系列单片机简介目前，Freescale的08系列单片机主要有HC08、HCS08和RS08三种类型。
HC08是1999年开始推出的产品，种类也比较多，针对不同场合的应用都可以选到合适的型号。
HCS08是2004年左右推出的8位MCU，资源丰富，功耗低，性价比很高，是08系列单片机的发展趋势。
HC08与HCS08的最大区别是调试方法不同与最高频率的变化。
RS08是HCS08架构的简化版本，于2006年推出，其内核体积比传统的内核小30%，带有精简指令集，满足用户对体积更小、更加经济高效的解决方案的需求。
RAM及Flash 空间大小差异、封装形式不同、温度范围不同、频率不同、I/O资源差异等形成了不同型号，为嵌入式应用产品的开发提供了丰富的选型。
2.1.1 Freescale单片机的命名规则Freescale单片机的型号庞大，但同一系列的CPU是相同的，也就是说具有相同的指令系统，多种型号只是为了适用于不同的场合。
KL26P64M48SF5 中文资料
定时器 • 六通道定时器/PWM (TPM) • 两个双通道定时器/PWM 模块 • 周期性中断定时器 • 16 位低功耗定时器(LPTMR) • 实时时钟
安全性和完整性模块 • 每个芯片具有 80 位唯一标识号
Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. © 2013–2014 Freescale Semiconductor, Inc. 保留
所有权利。
器件型号
MKL26Z32VFM4 MKL26Z64VFM4 MKL26Z128VFM4 MKL26Z32VFT4 MKL26Z64VFT4 MKL26Z128VFT4 MKL26Z32VLH4 MKL26Z64VLH4 MKL26Z128VLH4
Flash (KB) 32 64 128 32 64 128 32 64 128
• 在极低功耗运行模式下，运行功耗低至 40 μA/MHz • 静态功耗低至 2 μA，并具有全状态保留和 4.5 μs 唤醒能力 • 超高效 Cortex-M0+处理器，运行频率高达 48 MHz，具有业
界领先的吞吐速率 • 存储器选项为最高 128 KB Flash 和 16 KB RAM • 节能架构针对低功耗优化，采用 90nm TFS 技术、时钟和电
3 外设工作要求与特性......................................................................17 3.1 内核模块................................................................................. 17 3.1.1 SWD 电气特性 ......................................................... 17 3.2 系统模块................................................................................. 18 3.3 时钟模块................................................................................. 18 3.3.1 MCG 特性.................................................................. 18 3.3.2 振荡器电气规格........................................................ 20 3.4 存储器和存储器接口............................................................. 22 3.4.1 Flash 电气规格...........................................................22 3.5 安全性和完整性模块............................................................. 23 3.6 模拟......................................................................................... 24 3.6.1 ADC 电气规格...........................................................24 3.6.2 CMP 和 6 位 DAC 的电气规格................................ 28
单元一(1)HC08单片机介绍及Codewarrior使用
单元一（1）HC08单片机介绍及Codewarrior使用一、单片机基本概念1.何谓单片机一台能够工作的计算机要有这样几个部份构成：CPU（进行运算、控制）、RAM（数据存储）、ROM（程序存储）、输入/输出设备（例如：串行口、并行输出口等）。
在个人计算机上这些部份被分成若干块芯片，安装一个称之为主板的印刷线路板上。
而在单片机中，这些部份，全部被做到一块集成电路芯片中了，所以就称为单片（单芯片）机，而且有一些单片机中除了上述部份外，还集成了其它部份如A/D，D/A等。
PC中的CPU一块就要卖几百块钱，这么多东西做在一起，是不是很贵？说这块芯片体积是不是很大呢？恰恰相反，单片机的价格并不高，从几元人民币到几十元人民币，体积也不大，一般用40脚封装，当然功能多一些单片机也有引脚比较多的，如68，84，100引脚，功能少的10多个或20多个引脚，有的甚至只有8个引脚。
为什么会这样呢？因为功能有强弱。
比如，市场上面有的组合音响一套才卖几百块钱，可是有的一台功放机就要卖好几千。
另外这种芯片的生产量很大，技术也很成熟，如51系列的单片机已经做了十几年，所以价格就很低了。
单片机的功能肯定不强，干吗要学它呢？实际工作中并不是任何需要计算机的场合都要求计算机有很高的性能，一个控制电冰箱温度的计算机难道要用PIII？应用的关键是看是否够用，是否有很好的性能价格比。
所以8051出来十多年，依然没有被淘汰，还在不断的发展中。
2.常用的单片机（1）51系列51系列单片机是Intel公司在20世纪80年代初研制出来的，很快就在我国得到推广和广泛的应用。
20多年来，51系列单片机在教学、工业控制、仪器仪表和信息通信中发挥着重要的作用，并在交通、航运和家用电器等领域取得了大量的应用成果。
20世纪80年代中期以后，Intel公司以专利转让的形式把8051内核给了许多半导体厂家，如Arotel、Philps、Ananog Devlces和Dallas等。
HM54-60R86VLF中文资料
Heating (1) Isat (2) Current (Adc) (Adc)
32 32 33 33 32 32 31 31 27 27 35 35 32 32 33 33 42 42 32 32 27 27 41 41
DCR (3) mΩ Max.
1.15 1.15 0.70 0.70 0.75 0.75 1.1 1.1 1.6 1.6 1.1 1.1
Fig. 2 2 2 2 2
L .570 14.48 .610 15.50 .640 16.25 .690 17.53 .760 19.30
W .570 14.48 .610 15.50 .640 16.25 .690 17.53 .760 19.30
Ht .260 6.61 .295 7.50 .300 7.61 .380 9.65 .360 9.14
.142±.020 3.6±0.5 P± .020 0.5
Refer to Specifications table for ‘A’ & ‘P’ dimensions of each model.
28
MAGNETIC COMPONENTS SELECTOR GUIDE 2007/08 EDITION
Fig.
1 2 1 2 1 2 1 2 1 2 1 2
(1) The heating current is the DC current which causes the component temperature to increase by approximately 50°C. This current is determined by soldering the component on a typical application PCB, and then apply the current to the component for 30 minutes. (2) Isat is the saturation current at which inductance rolls off approximately 30% from its initial value. (3) DC resistance is measured at 25°C.
烽火设备基础资料
780BNMU单盘硬件
面板指示灯含义
指示灯 ACT
UA/NUA NET SBUS MBUS
DCC指示灯
指示灯状态
备注
长亮但不闪烁表示 NMU盘未得到正确的配置 或时间；正常工作时，均 匀闪烁。
★ MBS1 MBUS1口通讯状态指示.闪动表示该口收到数据，本设备对外有6个MBUS1
口并联使用，可将其它功能模块（框、架）纳入到本设备进行管理
★ MBS2 MBUS2口通讯状态指示 闪动表示该口收到数据
★ DCCw 西DCC接收指示
闪动表示该口收到数据
★ DCCe 东DCC接收指示
闪动表示该口收到数据
6 6 611 3 3 322
EEEEEE 111111 ︱︱︱︱︱︱
666666 333333
123
456789
00 01 02 03 04 05 06 0 0 09 0 0 0 0 0 0F
11
78
ABCDE
风扇及分纤单元
OO
TTAAO 0
OO
25 25
U U U U 15 15
25 25
00 00
★ SBUS BCT应答指示 均匀闪动表示BCT与EMU通讯正常，不闪动表示
EMU未收到BCT应答，闪动频度不均匀表示可能有BCT通讯不好
★ NET F口数据指示灯 该灯以一定的频率闪动表示F口有数据收发
★ DCC0~3 从CPU串行口1~4指示灯 闪动表示该口收到数据
GF155-03BEMU单盘说明
❖ 可对某站点的光/电分支设备进行管理，；
[说明]mf1s50简介（中文）
![[说明]mf1s50简介（中文）](https://img.taocdn.com/s3/m/5300d7aa970590c69ec3d5bbfd0a79563c1ed415.png)
S50非接触式IC卡性能简介（M1）一、主要指标●容量为8K位（bits）=1K字节（bytes）EEPROM●分为16个扇区，每个扇区为4块，每块16个字节,以块为存取单位●每个扇区有独立的一组密码及访问控制●每张卡有唯一序列号，为32位●具有防冲突机制，支持多卡操作●无电源，自带天线，内含加密控制逻辑和通讯逻辑电路●数据保存期为10年，可改写10万次，读无限次●工作温度：-20℃~50℃(湿度为90%)●工作频率：13.56MHZ●通信速率：106 KBPS●读写距离：10 cm以内（与读写器有关）二、存储结构1、M1卡分为16个扇区，每个扇区由4块（块0、块1、块2、块3）组成，（我们也将16个扇区的64个块按绝对地址编号为0~63，存贮结构如下图所示：数据块0数据块 1数据块 2控制块 3数据块 4数据块 5数据块 6控制块7数据块60数据块61数据块62控制块632、第0扇区的块0（即绝对地址0块），它用于存放厂商代码，已经固化，不可更改。
3、每个扇区的块0、块1、块2为数据块，可用于存贮数据。
数据块可作两种应用：★ 用作一般的数据保存，可以进行读、写操作。
★ 用作数据值，可以进行初始化值、加值、减值、读值操作。
4、每个扇区的块3为控制块，包括了密码A 、存取控制、密码B 。
具体结构如下：密码A （6字节） 存取控制（4字节） 密码B （6字节）5、每个扇区的密码和存取控制都是独立的，可以根据实际需要设定各自的密码及存取控制。
存取控制为4个字节，共32位，扇区中的每个块（包括数据块和控制块）的存取条件是由密码和存取控制共同决定的，在存取控制中每个块都有相应的三个控制位,定义如下：块0： C10 C20 C30 块1： C11 C21 C31块2： C12 C22 C32 块3： C13 C23 C33三个控制位以正和反两种形式存在于存取控制字节中，决定了该块的访问权限（如进行减值操作必须验证KEY A ，进行加值操作必须验证KEY B ，等等）。
M54HC365F1R中文资料
1/11May 2004sHIGH SPEED:t PD =10ns (TYP .)at V CC =6V sLOW POWER DISSIPATION:I CC =4µA(MAX.)at T A =25°C sHIGH NOISE IMMUNITY:V NIH =V NIL =28%V CC (MIN.)sSYMMETRICAL OUTPUT IMPEDANCE:|I OH |=I OL =6mA (MIN)sBALANCED PROPAGATION DELAYS:t PLH ≅t PHLsWIDE OPERATING VOLTAGE RANGE:V CC (OPR)=2V to 6VsPIN AND FUNCTION COMPATIBLE WITH 54SERIES 365s SPACE GRADE-1:ESA SCC QUALIFIED s50krad QUALIFIED,100krad AVAILABLE ON REQUESTsNO SEL UNDER HIGH LET HEAVY IONS IRRADIATIONsDEVICE FULLY COMPLIANT WITH SCC-9401-052DESCRIPTIONThe 54HC365is an advanced high-speed CMOS HEX BUS BUFFER (3-STATE)fabricated with silicon gate C 2MOS technology.All six buffers are controlled by the combination of two enable inputs (G1and G2);all outputs of these buffers are enabled only when both G1and G2inputs are held low,under all other conditions these outputs are disabled in a high-impedance state.The M54HC365has non inverting outputs.All inputs are equipped with protection circuits against static discharge and transient excess voltage.M54HC365RAD-HARD HEX BUS BUFFERWITH 3STATE OUTPUTS (NONINVERTING)ORDER CODESPACKAGE FM EM DILC M54HC365D M54HC365D1FPCM54HC365KM54HC365K1M54HC3652/11Figure 1:IEC Logic SymbolsFigure 2:Input And Output Equivalent Circuit Table 1:Pin DescriptionTable 2:Truth TableX :Don’t CareZ :HighImpedancePIN N°SYMBOL NAME AND FUNCTION 1,15G1,G2Output Enable Inputs 2,4,6,10,12,141A to 6A Data Inputs 3,5,7,9,11,131Y to 6Y Data Outputs8GND Ground (0V)16V CCPositive Supply VoltageINPUTSOUTPUTSG1G2An Y L L L L L L H H H X X Z XHXZM54HC3653/11Table 3:Absolute Maximum RatingsAbsolute Maximum Ratings are those values beyond which damage to the device may occur.Functional operation under these conditions is not impliedTable 4:Recommended Operating ConditionsSymbol ParameterValue Unit V CC Supply Voltage -0.5to +7V V I DC Input Voltage -0.5to V CC +0.5V V O DC Output Voltage -0.5to V CC +0.5V I IK DC Input Diode Current ±20mA I OK DC Output Diode Current ±20mA I O DC Output Current ±35mA I CC or I GND DC V CC or Ground Current±70mA P D Power Dissipation 420mW T stg Storage Temperature -65to +150°C T LLead Temperature (10sec)265°CSymbol ParameterValue Unit V CC Supply Voltage 2to 6V V I Input Voltage 0to V CC V V O Output Voltage 0to V CC V T op Operating Temperature -55to 125°C t r ,t fInput Rise and Fall TimeV CC =2.0V 0to 1000ns V CC =4.5V 0to 500ns V CC =6.0V0to 400nsM54HC3654/11Table 5:DC SpecificationsSymbolParameterTest ConditionValue UnitV CC (V)T A =25°C -40to 85°C -55to 125°C Min.Typ.Max.Min.Max.Min.Max.V IHHigh Level Input Voltage 2.0 1.5 1.5 1.5V 4.5 3.15 3.15 3.156.0 4.24.24.2V ILLow Level Input Voltage2.00.50.50.5V4.5 1.35 1.35 1.356.0 1.81.81.8V OHHigh Level Output Voltage2.0I O =-20µA 1.9 2.0 1.9 1.9V4.5I O =-20µA 4.4 4.5 4.4 4.46.0I O =-20µA5.96.0 5.9 5.94.5I O =-6.0mA 4.18 4.31 4.13 4.106.0I O =-7.8mA 5.685.8 5.635.60V OLLow Level Output Voltage2.0I O =20µA 0.00.10.10.1V 4.5I O =20µA 0.00.10.10.16.0I O =20µA 0.00.10.10.14.5I O =6.0mA 0.170.260.330.406.0I O =7.8mA 0.180.260.330.40I I Input Leakage Current6.0V I =V CC or GND ±0.1±1±1µA I OZ High Impedance Output Leakage Current6.0V I =V IH or V IL V O =V CC or GND ±0.5±5±10µA I CCQuiescent Supply Current6.0V I =V CC or GND44080µAM54HC3655/11Table 6:AC Electrical Characteristics (C L =50pF,Input t r =t f =6ns)Table 7:Capacitive Characteristics1)C PD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load.(Refer to Test Circuit).Average operating current can be obtained by the following equation.I CC(opr)=C PD x V CC x f IN +I CC /6(per gate)SymbolParameterTest ConditionValue UnitV CC (V)C L (pF)T A =25°C -40to 85°C -55to 125°C Min.Typ.Max.Min.Max.Min.Max.t TLH t THL Output TransitionTime 2.05025607590ns 4.571219186.06101315t PLH t PHL Propagation DelayTime2.0503890115135ns4.5121823276.010*******.015051130165195ns4.5172633396.014222833t PZL t PZH High ImpedanceOutput Enable Time2.050R L =1K Ω64130165195ns4.5162633396.0142228332.0150R L =1K Ω76150190225ns4.5193038456.016263238t PLZ t PHZ High ImpedanceOutput Disable Time2.050R L =1K Ω42130165195ns4.5182633396.015222833SymbolParameterTest ConditionValue UnitV CC (V)T A =25°C -40to 85°C -55to 125°C Min.Typ.Max.Min.Max.Min.Max.C IN Input Capacitance 5.05101010pF C PDPower Dissipation Capacitance (note 1)5.027pFM54HC3656/11Figure 3:Test CircuitC L =50pF/150pF or equivalent (includes jig and probe capacitance)R 1=1K Ωor equivalentR T =Z OUT of pulse generator (typically 50Ω)Figure 4:Propagation Delay Times Waveform (f=1MHz;50%duty cycle)TESTSWITCH t PLH ,t PHLOpen t PZL ,t PLZ V CC t PZH ,t PHZGNDM54HC3657/11Figure 5:Output Enable And Disable Times Waveform (f=1MHz;50%dutycycle)M54HC3658/11DIM.mm.inchMIN.TYP MAX.MIN.TYP.MAX.A 2.1 2.710.0830.107 a1 3.00 3.700.1180.146 a20.630.88 1.140.0250.0350.045B 1.82 2.390.0720.094 b0.400.450.500.0160.0180.020 b10.200.2540.300.0080.0100.012 D20.0620.3220.580.7900.8000.810 e7.367.627.870.2900.3000.310 e1 2.540.100e217.6517.7817.900.6950.7000.705 e37.627.878.120.3000.3100.320 F7.297.497.700.2870.2950.303 I 3.830.151 K10.9012.10.4290.476 L 1.14 1.50.0450.059DILC-16 MECHANICAL DATA0056437FM54HC3659/11DIM.mm.inchMIN.TYP MAX.MIN.TYP.MAX.A 6.75 6.917.060.2660.2720.278B 9.769.9410.140.3840.3920.399C 1.49 1.950.0590.077D 0.1020.1270.1520.0040.0050.006E 8.768.899.010.3450.3500.355F 1.270.050G 0.380.430.480.0150.0170.019H 6.00.237L 18.7522.00.7380.867M 0.330.380.430.0130.0150.017N4.310.170FPC-16 MECHANICAL DATA0016030E1816FG DHA BMCNH9ELM54HC365Table8:Revision HistoryDate Revision Description of Changes 03-May-20041First Release10/11M54HC365 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronicsAll other names are the property of their respective owners© 2004 STMicroelectronics - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.11/11。
HF49F中文数据手册
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电路图纸-TCL彩电IC中文名称及参数资料 (105种)
信号输出
4
PF2
相为滤波器 3.8 16
TD
高音数字－ 2.2
2
模拟转换输
出
5
PF3
相为滤波器 3.8 17
BLD
左右声道平 2.9
3
衡数字－模
拟转换输出
6
PF4
相为滤波器 3.8 18
RT
右声道高音 3.8
4
变频器校正
7
GND
接地点
0 19
RB
右声道低音 3.8
变频器校正
8
LT
左声道高音 3.8 20
序
符号
功能
直流 序
符号
功能
直流电
号
电压 号
压（V）
（V）
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电源 1
11 6
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反馈输入
9.4
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输入信号
4.9 7
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08
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信号输出
9.5
4
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外接滤波器
9.3
AN5891K 音频处理集成电路
概述：AN5891K 是 I2C 总线控制的音频处理器，具有以下特点：受 I2C 总线控制；AGC
为复位输入端口，外接电阻电容组成的复位电路。VCC（40 脚）和 VSS（20 脚）为供电端
口，分别接+5V 电源的正负端。P0~P3 为可编程通用 I/O 脚，其功能用途由软件定义，在本
设计中，P0 端口（32~39 脚）被定义为 N1 功能控制端口，分别与 N1 的相应功能管脚相连
54LS08中文资料
54LS08中⽂资料TL F 634754LS08 DM54LS08 DM74LS08 Quad 2-Input AND GatesJune198954LS08 DM54LS08 DM74LS08Quad2-Input AND Gates General DescriptionThis device contains four independent gates each of whichperforms the logic AND functionFeaturesY Alternate Military Aerospace device(54LS08)is avail-able Contact a National Semiconductor Sales OfficeDistributor for specificationsConnection DiagramDual-In-Line PackageTL F 6347–1 Order Number54LS08DMQB 54LS08FMQB 54LS08LMQB DM54LS08J DM54LS08W DM74LS08M orDM74LS08NSee NS Package Number E20A J14A M14A N14A or W14BFunction TableY e ABInputs OutputA B YL L LL H LH L LH H HH e High Logic LevelL e Low Logic LevelC1995National Semiconductor Corporation RRD-B30M105 Printed in U S AAbsolute Maximum Ratings(Note)If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage7V Input Voltage7V Operating Free Air Temperature RangeDM54LS and54LS b55 C to a125 C DM74LS0 C to a70 C Storage Temperature Range b65 C to a150 C Note The‘‘Absolute Maximum Ratings’’are those values beyond which the safety of the device cannot be guaran-teed The device should not be operated at these limits The parametric values defined in the‘‘Electrical Characteristics’’table are not guaranteed at the absolute maximum ratings The‘‘Recommended Operating Conditions’’table will define the conditions for actual device operationRecommended Operating ConditionsSymbol ParameterDM54LS08DM74LS08Units Min Nom Max Min Nom MaxV CC Supply Voltage4 555 54 7555 25V V IH High Level Input Voltage22V V IL Low Level Input Voltage0 70 8V I OH High Level Output Current b0 4b0 4mA I OL Low Level Output Current48mA T A Free Air Operating Temperature b55125070 C Electrical Characteristics over recommended operating free air temperature range(unless otherwise noted)Symbol Parameter Conditions MinTypMax Units (Note1)V I Input Clamp Voltage V CC e Min I I e b18mA b1 5V V OH High Level Output V CC e Min I OH e Max DM542 53 4V Voltage V IH e Min DM742 73 4V OL Low Level Output V CC e Min I OL e Max DM540 250 4 Voltage V IL e Max DM740 350 5VI OL e4mA V CC e Min DM740 250 4I I Input Current Max V CC e Max V I e7V0 1mAInput VoltageI IH High Level Input Current V CC e Max V I e2 7V20m A I IL Low Level Input Current V CC e Max V I e0 4V b0 36mAI OS Short Circuit V CC e Max DM54b20b100mA Output Current(Note2)DM74b20b100I CCH Supply Current with V CC e Max2 44 8mAOutputs HighI CCL Supply Current with V CC e Max4 48 8mAOutputs LowSwitching Characteristics at V CC e5V and T A e25 C(See Section1for Test Waveforms and Output Load)R L e2k XSymbol Parameter C L e15pF C L e50pF UnitsMin Max Min Maxt PLH Propagation Delay Time413618ns Low to High Level Outputt PHL Propagation Delay Time311518ns High to Low Level OutputNote1 All typicals are at V CC e5V T A e25 CNote2 Not more than one output should be shorted at a time and the duration should not exceed one second23Physical Dimensions inches(millimeters)Ceramic Leadless Chip Carrier Package(E)Order Number54LS08LMQBNS Package Number E20A14-Lead Ceramic Dual-In-Line Package(J)Order Number54LS08DMQB or DM54LS08JNS Package Number J14A4Physical Dimensions inches(millimeters)(Continued)14-Lead Small Outline Molded Package(M)Order Number DM74LS08MNS Package Number M14A14-Lead Molded Dual-In-Line Package(N)Order Number DM74LS08NNS Package Number N14A554L S 08 D M 54L S 08 D M 74L S 08Q u a d 2-I n p u t A N D G a t e sPhysical Dimensions inches (millimeters)(Continued)14-Lead Ceramic Flat Package (W)Order Number 54LS08FMQB or DM54LS08WNS Package Number W14BLIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which (a)are intended for surgical implant support device or system whose failure to perform can into the body or (b)support or sustain life and whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can effectivenessbe reasonably expected to result in a significant injury to the userNational Semiconductor National Semiconductor National Semiconductor National Semiconductor CorporationEuropeHong Kong LtdJapan Ltd1111West Bardin RoadFax (a 49)0-180-530858613th Floor Straight Block Tel 81-043-299-2309。
第2章FreescaleHC(s)08系列单片机概述
第2章FreescaleHC(s)08系列单片机概述是《嵌入式技术基础与实践》这本书的配套课件,帮助大家更好的学习飞思卡尔的住款单片机。
《嵌入式技术基础与实践》嵌入式技术基础与实践》第二章FreescaleHC08/S08系列FreescaleHC0 C08/S08系列单片机概述主要内容 2.1 08系列单片机简介 2.2 HC08系列单片机 2.3 HCS08系列单片机 2.4 RS08系列单片机 2.5 进一步讨论是《嵌入式技术基础与实践》这本书的配套课件,帮助大家更好的学习飞思卡尔的住款单片机。
《嵌入式技术基础与实践》嵌入式技术基础与实践》2.1 08系列单片机简介08系列单片机简介Freescale的08系列单片机主要有HC08, HCS08和RS08三种类型.HC08推出比较早,种类也比较多,针对不同的场合都可以HC08 选到合适的型号. HCS08是最近推出的新型的08 08系列单片机,性价比很高,是HCS08 08 08系列单片机的发展趋势. 08 RS08是HCS08 RS08 HCS08架构的简化版,其内核体积小,带有精简指令HCS08 集,满足用户对体积更小,更加经济高效地解决方案的需求.是《嵌入式技术基础与实践》这本书的配套课件,帮助大家更好的学习飞思卡尔的住款单片机。
《嵌入式技术基础与实践》嵌入式技术基础与实践》Freescale单片机单片机, 2.1.1 Freescale单片机,基本命名规则хх х хх х х хх х хх ① ② ③ ④ ⑤ ⑥ ⑦①指产品状态存储器类型标志. ② 存储器类型标志. 芯片内核. ③ 芯片内核. 型号标志.④ 型号标志. 存储器大小. ⑤ 存储器大小. 工作温度范围标志.⑥ 工作温度范围标志. 封装标志. ⑦ 封装标志.特别说明: HC08芯片以前命名中包含了68HC“部分芯片以前命名中包含了" 部分, 特别说明:Freescale HC08芯片以前命名中包含了"68HC 部分,如: *****32芯片以前的名称是*****08GP32,在很多资料中对于HC08 芯片以前的名称是*****08GP32 HC08芯*****32芯片以前的名称是*****08GP32,在很多资料中对于HC08芯片都沿用了这种方法. 片都沿用了这种方法.是《嵌入式技术基础与实践》这本书的配套课件,帮助大家更好的学习飞思卡尔的住款单片机。
M54HC123F1R资料
M54HC123/123A M74HC123/123AOctober 1993DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATORB1R(Plastic Package)ORDER CODES :M54HCXXXF1R M74HCXXXM1R M74HCXXXB1R M74HCXXXC1RF1R(Ceramic Package)M1R(Micro Package)C1R (Chip Carrier)PIN CONNECTIONS (top view)NC =No Internal Connecti o n.HIGH SPEEDt PD =25ns (TYP)at V CC =5V .LOW POWER DISSIPATIONSTANDBYSTATE I CC =4µA (MAX.)AT T A =25°C ACTIVE STATE I CC =200µA (TYP.)AT V CC =5V .HIGH NOISE IMMUNITYV NIH =V NIL =28%V CC (MIN.).OUTPUT DRIVE CAPABILITY 10LSTTL LOADS.SYMMETRICAL OUTPUT IMPEDANCE I OH =I OL =4mA (MIN.).BALANCED PROPAGATION DELAYS t PLH =t PHL.WIDE OPERATING VOLTAGE RANGE V CC (OPR)=2V TO 6V.WIDE OUTPUT PULSE WIDTH RANGE t WOUT =120ns ∼60s OVER AT V CC =4.5V .PIN AND FUNCTION COMPATIBLE WITH 54/74LS123The M54/74HC123is a high speed CMOS MONO-STABLE multivibrator fabricated with silicon gate C 2MOS technology.It achieves the high speed operation similar to equivalent LSTTL while main-taining the CMOS low power dissipation.There are two trigger inputs,A INPUT (negative edge)and 8INPUT (positive edge).These inputs are valid for slow rising/falling signals,(tr =tf =I sec).The device may also be triggered by using the CLR input (posi-tive-edge)because of the Schmitt-trigger input ;after triggering the output maintains the MONO-STABLE state for the time period determined by the external resistor Rx and capacitor Cx.When Cx ≥10nF and Rx ≥10K Ω,the output pulse width value is approssimatively given by the formula:t w(out)=K •Cx •Rx.Two different pulse width constant are available:K ≅0.45for HC123K ≅1for HC123A.Taking CLR low breaks this MONOSTABLE STATE.If the next trigger pulse occurs during the MONOSTABLEperiod it makes the MONOSTABLE period longer.Limit for values of Cx and Rx :Cx :NO LIMITRx :V CC <3.0V 5K Ωto 1M ΩV CC ≥3.0V 1K Ωto 1M ΩAll inputs are equipp ed with protection circuitsDESCRIPTION1/14M54/M74HC123/123A SYSTEM DIAGRAMTIMING CHART2/14BLOCK DIAGRAMNote:(1)Cx,Rx,Dx are external compo nents.(2)Dx is a clamping diode.The external capacitor is charged toV CC inthe stand-by state,i.e.no trigger.When the supply voltage is turned off Cx is discha rged mainly through an internal para sitic diode(see figures).If Cx is sufficiently large and V CC dec reases rapidy,there will be some pos sibility of da-maging the I.C.with a surg e current or latch-up.If the voltage sup ply filter capac itor is large eno ugh and V CC decrease slowly,the surg e current is automatically limited and damage the I.C.is avo ided.The maximum forward current of the parasitic diode is app roximately20 mA.In cases where Cx is large the time taken for the sup ply voltage to fall to0.4V CC canbe calculated as follows:t f≥(V CC–0.7)⋅Cx/20mAIn cases where t f is too short an external clamping diode is required to protect the I.C.from the surge current.FUNCTIONAL DESCRIPTIONSTAND-BY STATEThe external capacitor,Cx,is fully charged to V CC in the stand-by state.Hence,before triggering,tran-sistor Qp and Qn(connected to the Rx/Cx node)are both turned-off.The two comparators that control the timing and the two reference voltage sources stop operating.The total supply current is therefore only leakage current.TRIGGER OPERATIONTriggering occurs when:1st)A is”low”and B has a falling edge;2nd)B is”high”and A has a rising edge;3rd)A is low and B is high and C1has a rising edge. After the multivibrator has been retrigger ed com-parator C1and C2start operating and Qn is turned on.Cx then discharges through Qn.The voltage at the node R/C external falls.When it reaches V REFL the output of comparator C1 becomes low.This in turn resets the flip-flop and Qn is turned off.At this point C1stops functioning but C2continues to operate.The voltage at R/C external begins to rise with a time constant set by the external components Rx,Cx. Triggering the multivibrator causes Q to go high after internal delay due to the flip-flop and the gate.Q re-mains high until the voltage at R/C external rises again to V REFH.At this point C2output goes low and O goes low.C2stop operating.That means that after triggering when the voltage R/C external re-turns to V REFH the multivibrator has returned to its MONOSTABLE STATE.In the case where Rx⋅Cx are large enough and the discharge time of the ca-pacitor and the delay time in the I.C.can be ignored, the width of the output pulse tw(out)is as follows: t W(OUT)=0.46Cx⋅Rx(HC123)t W(OUT)=Cx⋅Rx(HC123A)M54/M74HC123/123A3/14FUNCTIONAL DESCRIPTION(continued)RE-TRIGGERED OPERATIONWhen a second trigger pulse follows the first its ef-fect will depend on the state of the multivibrator.If the capacitor Cx is being charged the voltage level of R/C external falls to Vrefl again and Q remains high i.e.the retrigger pulse arrives in a time shorter than the period Rx⋅Cx seconds,the capacitor charging time constant.If the second trigger pulse is very close to the initial trigger pulse it is ineffective ;i.e.the second trigger must arrive in the capacitor discharge cycle to be ineffective;Hence the mini-mum time for a second trigger to be effective de-pends on V CC and Cx.RESET OPERATIONCL is normally high.If CL is low,the trigger is not ef-fective because Q output goes low and trigger con-trol flip-flop is reset.Also transistor Op is turned on and Cx is charged quicky to V CC.This means if CL input goes low,the IC becomes waiting state both in operating and non operatin g state.TRUTH TABLEINPUTS OUTPUTSNOTEA B CL Q QH H OUTPUT ENABLEX L H L H INHIBITH X H L H INHIBITL H OUTPUT ENABLE L H OUTPUT ENABLE X X L L H INHIBITX:Don’t Care Z:High ImpedanceINPUT AND OUTPUT EQUIVALENT CIRCUITM54/M74HC123/123A4/14PIN DESCRIPTIONPIN No SYMBOL NAME AND FUNCTION 1,91A,2A Trigger Inputs(NegativeEdge Triggered) 2,101B,2B Trigger Inputs(PositiveEdge Triggered)3,111CLR,2CLR Direct Reset LOW and Trigger Action at Positive Edge4,121Q,2Q Outputs(Active LOW) 72R EXT/C EXT External ResistorCapacitor Connection 13,51Q,2Q Outputs(Active HIGH)14,61C EXT2C EXT External Capacitor Connection151R EXT/C EXT External ResistorCapacitor Connection8GND Ground(0V)16V CC Positive Supply VoltageIEC LOGIC SYMBOLABSOLUTE MAXIMUM RATINGSymbol Parameter Value Unit V CC Supply Voltage-0.5to+7V V I DC Input Voltage-0.5to V CC+0.5V V O DC Output Voltage-0.5to V CC+0.5VI IK DC Input Diode Current±20mAI OK DC Output Diode Current±20mAI O DC Output Source Sink Current Per Output Pin±25mAI CC or I GND DC V CC or Ground Current±50mAP D Power Dissipation500(*)mW T stg Storage Temperature-65to+150o C T L Lead Temperature(10sec)300o C Absolute Maximum Ratings are those values beyond whichdamage to the device may occu r.Functiona l ope ration und er these cond ition isnotimplied. (*)500mW:≅65o C derate to300mW by10mW/o C:65o C to85o CM54/M74HC123/123A5/14DC SPECIFICATIONSSymbolParameterTest ConditionsValueUnitV CC (V)T A =25oC 54HC and 74HC -40to 85o C 74HC -55to 125o C54HC Min.Typ.Max.Min.Max.Min.Max.V IHHigh Level Input Voltage 2.0 1.5 1.5 1.5V4.5 3.15 3.15 3.156.0 4.24.24.2V ILLow Level Input Voltage 2.00.50.50.5V4.5 1.35 1.35 1.356.0 1.81.81.8V OHHigh Level Output Voltage2.0V I =V IH orV IL I O =-20µA 1.9 2.0 1.9 1.9V4.5 4.4 4.5 4.4 4.46.05.96.0 5.9 5.94.5I O =-4.0mA4.18 4.31 4.13 4.106.0I O =-5.2mA 5.685.8 5.635.60V OLLow Level Output Voltage2.0V I =V IH orV IL I O =20µA 0.00.10.10.1V4.50.00.10.10.16.00.00.10.10.14.5I O =4.0mA 0.170.260.330.406.0I O =5.2mA 0.180.260.330.40I I Input Leakage Current6.0V I =V CC or GND ±0.1±1±1µA I I R/C Terminal Off State Current 6.0V I =V CC or GND ±0.1±1±1µA I CC Quiescent Supply Current6.0V I =V CC or GND 44080µA I CC ’Active StateSupply Current (1)2.0V I =V CC or GND Pin 7or 15V IN =V CC /245200260320µA 4.5500600780960µA 6.00.711.31.6mA(1):Per CircuitRECOMMENDED OPERATING CONDITIONSSymbol ParameterValue Unit V CC Supply Voltage 2to 6V V I Input Voltage 0to V CC V V O Output Voltage0to V CC VT op Operating Temperature:M54HC SeriesM74HC Series-55to +125-40to +85o C oC t r ,t fInput Rise and Fall Time0to 1000ns0to 5000to 400C X External Capacitor NO LIMITATIONpFR XExternal ResistorV CC <3V 5K to 1M ΩV CC ≥3V1K to 1M(*)The maximum allowable values of Cx and Rx are a function of leakage of capa citor Cx,the leakage of device and leakage due to the board layout and surface resistance.Susce ptibility to externally induced noise may occur for Rx >1M ΩM54/M74HC123/123A6/14AC ELECTRICAL CHARACTERISTICS(C L=50pF,Input t r=t f=6ns)Symbol ParameterTest Conditions ValueUnit V CC(V)T A=25o C54HC and74HC-40to85o C74HC-55to125o C54HCMin.Typ.Max.Min.Max.Min.Max.t TLH t THL Output TransitionTime2.0307595110ns4.581519226.07131619t PLH t PHL PropagationDelay Time(A,B-Q,Q)2.0102210265315ns4.5294253636.022364554t PLH t PHL PropagationDelay Time(C L RTR IGGE R-Q,Q)2.0102235295355ns4.5314759716.023405060t PLH t PHL PropagationDelay Time(CLR-Q,Q)2.068160200240ns4.5203240486.016273441t WOUT Output PulseWidth(for HC123)2.0C X=100pFR X=10KΩ1.4µs 4.5 1.26.0 1.12.0C X=0.1µFR X=100KΩ4.6ms 4.5 4.46.0 4.3t WOUT Output PulseWidth(for HC123A)2.0C X=100pFR X=10KΩ1.9µs 4.5 1.66.0 1.52.0C X=0.1µFR X=100KΩ9.8ms 4.59.56.09.4∆t WOUT Output PulseWidth ErrorBetween Circuitsin Same Package ±1%t W(H) t W(L)Minimum PulseWidth2.07595110ns4.51519226.0131619t W(L)Minimum PulseWidth(CLR)2.07595110ns 4.51519226.0131619t rr MinimumRetrigger Time 2.0C X=100pFR X=1KΩ325ns 4.51086.0782.0C X=0.1µFR X=100KΩ5µs 4.5 1.46.0 1.2C IN Input Capacitance5101010pFC PD(*)Power DissipationCapacitance 162pF(*)C PD is defined as the value of the IC’s internal equivalent capac itanc e which is calculated from the operating current con sump tion without load. (RefertoTestCircuit).Average opertingcurrent canbeobtained by thefollowing equation.I CC(opr)=C PD•V CC•f IN+I CC’Duty/100+I C/2(per monos table) (I CC’:Active Supply Current)(Duty:%)M54/M74HC123/123A7/14Output Pulse Width Constant Characteristics (for HC123)Output Pulse Width Characteristics(for HC123)Output Pulse Width Constant Characteristics (for HC123A)Output Pulse Width Characteristics(for HC123A)M54/M74HC123/123A 8/14M54/M74HC123/123A TEST CIRCUIT I CC(Opr)*TRANSITION TIME OF INPUT WAVEFORM IS THE SAME ASTHAT IN SASE OF SWITCHINGCHARACTERISTICS TESTS.SWITCHING CHARACTERISTICS TEST WAVEFORM9/14M54/M74HC123/123APlastic DIP16(0.25)MECHANICAL DATAmm inch DIM.MIN.TYP.MAX.MIN.TYP.MAX.a10.510.020B0.77 1.650.0300.065 b0.50.020b10.250.010D200.787 E8.50.335e 2.540.100e317.780.700F7.10.280I 5.10.201L 3.30.130Z 1.270.050P001C 10/14Ceramic DIP16/1MECHANICAL DATAmm inchDIM.MIN.TYP.MAX.MIN.TYP.MAX. A200.787 B70.276 D 3.30.130E0.380.015e317.780.700F 2.29 2.790.0900.110 G0.40.550.0160.022 H 1.17 1.520.0460.060 L0.220.310.0090.012 M0.51 1.270.0200.050 N10.30.406 P7.88.050.3070.317 Q 5.080.200P053DSO16(Narrow)MECHANICAL DATAmm inchDIM.MIN.TYP.MAX.MIN.TYP.MAX.A 1.750.068 a10.10.20.0040.007 a2 1.650.064 b0.350.460.0130.018 b10.190.250.0070.010 C0.50.019c145°(typ.)D9.8100.3850.393 E 5.8 6.20.2280.244 e 1.270.050e38.890.350F 3.8 4.00.1490.157G 4.6 5.30.1810.208 L0.5 1.270.0190.050 M0.620.024 S8°(max.)P013HPLCC20MECHANICAL DATAmm inchDIM.MIN.TYP.MAX.MIN.TYP.MAX. A9.7810.030.3850.395 B8.899.040.3500.356 D 4.2 4.570.1650.180 d1 2.540.100d20.560.022E7.378.380.2900.330 e 1.270.050e3 5.080.200F0.380.015G0.1010.004 M 1.270.050M1 1.140.045P027AInformation furnished is believed to be accurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use.No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.©1994SGS-THOMSON Microelectronics-All Rights ReservedSGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia-Brazil-France-Germany-Hong Kong-Italy-Japan-Korea-Malaysia-Malta-Morocco-The Netherlands-Singapore-Spain-Sweden-Switzerland-Taiwan-Thailand-United Kingdom-U.S.A。
8位增强型USB单片机CH549、CH548
8位增强型USB 单片机CH549、CH548手册 版本： 1 1、概述CH549芯片是一款兼容MCS51指令集的增强型E8051内核单片机，其79%的指令是单字节单周期指令，平均指令速度比标准MCS51快8～15倍。
CH549支持最高48MHz 系统主频，内置64K 程序存储器Flash-ROM 和256字节内部iRAM 以及2K 字节片内xRAM ，xRAM 支持DMA 直接内存存取。
CH549内置了12位ADC 模数转换、电容式触摸按键检测模块、TS 温度传感器、内置时钟、3组定时器和3路信号捕捉、8路PWM 、4组异步串口、SPI 等功能模块，支持全速和低速USB-Host 主机模式和USB-Device 设备模式以及USB PD 和type-C 。
CH548是CH549的简化版，程序存储器ROM 仅32KB ，异步串口仅提供UART0和UART1，其它与CH549相同，可直接参考CH549手册和资料。
型号程序ROM 引导ROM xRAM iRAM 非易失 EEPROM USB 主机 USB 设备 USB PD Type-C 定时 器 信号 捕捉 8位 PWM 异步 串口 SPI 主 SPI 从 12位 ADC 电容触摸按键CH549 60KB+3KB 2048 +256 1KB 全/低速 支持3组 3路 8路4组 2合1 16路 16通道CH548 32KB+3KB 2组下面为CH549的内部框图，仅供参考。
Pins: GND VDD V33 P00~P07 P10~P17 P20~P27 P30~P37 P40~P46 P50/1/4/5/72、特点l Core：增强型E8051内核，兼容MCS51指令集，其79%的指令是单字节单周期指令，平均指令速度比标准MCS51快8～15倍，特有XRAM数据快速复制指令，双DPTR指针。
l ROM：64KB非易失存储器Flash-ROM，支持10K次擦写，可以全部用于程序存储空间；或者可以分为60KB程序存储区和1KB数据存储区EEPROM以及3KB引导代码BootLoader/ISP程序区。
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DIM.
P001A
5/9
元器件交易网
M54/M74HC08
Ceramic DIP14/1 MECHANICAL DATA
mm MIN. A B D E e3 F G H L M N P Q 7.8 2.29 0.4 1.17 0.22 1.52 0.38 15.24 2.79 0.55 1.52 0.31 2.54 10.3 8.05 5.08 0.307 0.090 0.016 0.046 0.009 0.060 3.3 0.015 0.600 0.110 0.022 0.060 0.012 0.100 0.406 0.317 0.200 TYP. MAX. 20 7.0 0.130 MIN. inch TYP. MAX. 0.787 0.276
DIM.
P053C
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元器件交易网
M54/M74HC08
SO14 MECHANICAL DATA
DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8° (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45° (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.0(top view)
NC = No Internal Connection
December 1992
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元器件交易网
M54/M74HC08
TRUTH TABLE
A L L H H B L H L H Y L L L H
IEC LOGIC SYMBOL
VIH
High Level Input Voltage Low Level Input Voltage High Level Output Voltage
V IL
V OH
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元器件交易网
M54/M74HC08
AC ELECTRICAL CHARACTERISTICS (C L = 50 pF, Input t r = tf = 6 ns)
SWITCHING CHARACTERISTICS TEST CIRCUIT
TEST CIRCUIT ICC (Opr.)
INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST.
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元器件交易网
o
Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. Min. Max. 95 19 16 95 19 16 10 110 22 19 110 22 19 10 pF pF ns ns Unit
tTLH tTHL tPLH tPHL
Output Transition Time Propagation Delay Time
B1R (Plastic Package)
F1R (Ceramic Package)
M1R (Micro Package)
C1R (Chip Carrier)
ORDER CODES : M54HC08F1R M74HC08M1R M74HC08B1R M74HC08C1R
DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2INPUT AND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlow power consumption. The internal circuit is composed of 2 stages including buffer output, which gives high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage. INPUT AND OUTPUT EQUIVALENT CIRCUIT
元器件交易网
M54HC08 M74HC08
QUAD 2-INPUT AND GATE
. . . . . . . .
HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE IOH = IOL = 4 mA (MIN.) BALANCED PROPAGATION DELAYS tPLH = tPHL WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V TO 6 V PIN AND FUNCTION COMPATIBLE WITH 54/74LS08
M54/M74HC08
Plastic DIP14 MECHANICAL DATA
mm MIN. a1 B b b1 D E e e3 F I L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 0.335 0.100 0.600 0.280 0.201 1.65 TYP. MAX. MIN. 0.020 0.055 0.020 0.010 0.787 0.065 inch TYP. MAX.
PIN DESCRIPTION
PIN No 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 14 SYMBOL 1A to 4A 1B to 4B 1Y to 4Y GND VCC NAME AND FUNCTION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage
(*) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/4 (per Gate)
Test Conditions Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 CIN CPD (*) Input Capacitance Power Dissipation Capacitance TA = 25 C 54HC and 74HC Min. Typ. Max. 30 8 7 24 8 7 5 19 75 15 13 75 15 13 10
SCHEMATIC CIRCUIT (Per Gate)
ABSOLUTE MAXIMUM RATINGS
Symbol VCC VI VO IIK IOK ICC IO or IGND PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin DC VCC or Ground Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 25 ± 50 500 (*) -65 to +150 300 Unit V V V mA mA mA mA mW
o o
C C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied. (*) 500 mW: ≅ 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC
o o
VCC = 2 V VCC = 4.5 V VCC = 6 V
DC SPECIFICATIONS
Test Conditions Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 VOL Low Level Output Voltage 2.0 4.5 6.0 4.5 6.0 II ICC Input Leakage Current Quiescent Supply Current 6.0 6.0 1.9 4.4 5.9 4.18 5.68 2.0 4.5 6.0 4.31 5.8 0.0 0.0 0.0 0.17 0.18 0.1 0.1 0.1 0.26 0.26 ±0.1 1 TA = 25 oC 54HC and 74HC Min. 1.5 3.15 4.2 0.5 1.35 1.8 VI = IO=-20 µA VIH or V IL IO=-4.0 mA IO=-5.2 mA VI = IO= 20 µA VIH or V IL IO= 4.0 mA IO= 5.2 mA VI = VCC or GND VI = VCC or GND 1.9 4.4 5.9 4.13 5.63 0.1 0.1 0.1 0.33 0.33 ±1 10 Typ. Max. Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.10 5.60 0.1 0.1 0.1 0.40 0.40 ±1 20 µA µA V V Max. Min. 1.5 3.15 4.2 0.5 1.35 1.8 V Max. V Unit