CEM3120中文资料

3
CEM3120
VGS, Gate to Source Voltage (V)
10 VDS=20V ID=10A 10
2
RDS(ON)Limit
ID, Drain Current (A)
8
4
10ms 100ms 1s DC
10
1
6
10
0
4
2
10
-1
0 0 3 6 9 12 15
10
-2
TA=25 C TJ=150 C Single Pulse 10
D D 7 D 6 D 5
5
Lead free product is acquired. Surface mount Package.
8
SO-8 1
1 S
2 S
3 S
4 G
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
25 50 75 100 125 150
10
10
0
10 -25 0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
1260 1050 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
C, Capacitance (pF)
Ciss
840 630 420 210 0 0 5 10 15 20 25 Coss Crss
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C
±20
10 40 2.5 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=10A VGS=10V
-50
0
ຫໍສະໝຸດ Baidu
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
µA
TA = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units
5
nA nA
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective Transient Thermal Impedance
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units C/W
Details are subject to change without notice . 1
Rev 1. 2006.Sep http://www.cetsemi.com
元器件交易网www.cecb2b.com
CEM3120
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 10A VDS = 15V, ID = 10A, VGS = 10V VDD = 15V, ID = 10A, VGS = 10V, RGEN = 0.3Ω 15 3.2 29 7 15 2.8 1.7 10 1.3 30 6.4 58 14 19.9 ns ns ns ns nC nC nC A V Ciss Coss Crss VDS = 15V, VGS = 0V, f = 1.0 MHz 970 160 85 pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID =10A VGS = 4.5V, ID =4.5A 1 12.5 17 3 15 22 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 30 1 100 -100 V
D=0.5 0.2
10
-1
0.1 0.05 0.02 0.01 PDM t1 t2 Single Pulse 1. R£cJA (t)=r (t) * R£cJA 2. R£cJA=See Datasheet 3. TJM-TA = P* R£cJA (t) 4. Duty Cycle, D=t1/t2
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature
VGS=0V
1
VTH, Normalized Gate-Source Threshold Voltage
VDS=VGS ID=250µA
IS, Source-drain current (A)
CEM3120
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 10A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.
-2
10
-1
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G
10
-2
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4
2
CEM3120
10 VGS=10,8,6V 20 25 C
ID, Drain Current (A)
6
ID, Drain Current (A)
8
16
12
4
8
2
4 TJ=125 C 0 -55 C 2 4 5 6
VGS=3.0V
0 0.0 0.2 0.4 0.6 0.8 1.0 0
1
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics