Transparency Near a Photonic Band Edge
光电技术专业英语词汇
《光电技术》专业英语词汇1.Absorption coefficient 吸收系数2.Acceptance angle 接收角3.fibers 光纤4.Acceptors in semiconductors 半导体接收器5.Acousto-optic modulator 声光调制6.Bragg diffraction 布拉格衍射7.Air disk 艾里斑8.angular radius 角半径9.Airy rings 艾里环10.anisotropy 各向异性11.optical 光学的12.refractive index 各向异性13.Antireflection coating 抗反膜14.Argon-ion laser 氩离子激光器15.Attenuation coefficient 衰减系数16.Avalanche 雪崩17.breakdown voltage 击穿电压18.multiplication factor 倍增因子19.noise 燥声20.Avalanche photodiode(APD) 雪崩二极管21.absorption region in APD APD 吸收区域22.characteristics-table 特性表格23.guard ring 保护环24.internal gain 内增益25.noise 噪声26.photogeneration 光子再生27.primary photocurrent 起始光电流28.principle 原理29.responsivity of InGaAs InGaAs 响应度30.separate absorption and multiplication(SAM) 分离吸收和倍增31.separate absorption grading and multiplication(SAGM) 分离吸收等级和倍增32.silicon 硅33.Average irradiance 平均照度34.Bandgap 带隙35.energy gap 能级带隙36.bandgap diagram 带隙图37.Bandwidth 带宽38.Beam 光束39.Beam splitter cube 立方分束器40.Biaxial crystal双s 轴晶体41.Birefringent 双折射42.Bit rate 位率43.Black body radiation law 黑体辐射法则44.Bloch wave in a crystal 晶体中布洛赫波45.Boundary conditions 边界条件46.Bragg angle 布拉格角度47.Bragg diffraction condition 布拉格衍射条件48.Bragg wavelength 布拉格波长49.Brewster angle 布鲁斯特角50.Brewster window 布鲁斯特窗51.Calcite 霰石52.Carrier confinement 载流子限制53.Centrosymmetric crystals 中心对称晶体54.Chirping 啁啾55.Cladding 覆层56.Coefficient of index grating 指数光栅系数57.Coherence连贯性pensation doping 掺杂补偿59.Conduction band 导带60.Conductivity 导电性61.Confining layers 限制层62.Conjugate image 共轭像63.Cut-off wavelength 截止波长64.Degenerate semiconductor 简并半导体65.Density of states 态密度66.Depletion layer 耗尽层67.Detectivity 探测率68.Dielectric mirrors 介电质镜像69.Diffraction 衍射70.Diffraction g rating 衍射光栅71.Diffraction grating equation 衍射光栅等式72.Diffusion current 扩散电流73.Diffusion flux 扩散流量74.Diffusion Length 扩散长度75.Diode equation 二极管公式76.Diode ideality factor 二极管理想因子77.Direct recombinatio直n接复合78.Dispersion散射79.Dispersive medium 散射介质80.Distributed Bragg reflector 分布布拉格反射器81.Donors in semiconductors 施主离子82.Doppler broadened linewidth 多普勒扩展线宽83.Doppler effect 多普勒效应84.Doppler shift 多普勒位移85.Doppler-heterostructure 多普勒同质结构86.Drift mobility 漂移迁移率87.Drift Velocity 漂移速度88.Effective d ensity o f s tates 有效态密度89.Effective mass 有效质量90.Efficiency 效率91.Einstein coefficients 爱因斯坦系数92.Electrical bandwidth of fibers 光纤电子带宽93.Electromagnetic wave 电磁波94.Electron affinity 电子亲和势95.Electron potential energy in a crystal 晶体电子阱能量96.Electro-optic effects 光电子效应97.Energy band 能量带宽98.Energy band diagram 能量带宽图99.Energy level 能级100.E pitaxial growth 外延生长101.E rbium doped fiber amplifier 掺饵光纤放大器102.Excess carrier distribution 过剩载流子扩散103.External photocurrent 外部光电流104.Extrinsic semiconductors 本征半导体105.Fabry-Perot laser amplifier 法布里-珀罗激光放大器106.Fabry-Perot optical resonator 法布里-珀罗光谐振器107.Faraday effect 法拉第效应108.Fermi-Dirac function 费米狄拉克结109.Fermi energy 费米能级110.Fill factor 填充因子111.Free spectral range 自由谱范围112.Fresnel’s equations 菲涅耳方程113.Fresnel’s optical indicatrix 菲涅耳椭圆球114.Full width at half maximum 半峰宽115.Full width at half power 半功率带宽116.Gaussian beam 高斯光束117.Gaussian dispersion 高斯散射118.Gaussian pulse 高斯脉冲119.Glass perform 玻璃预制棒120.Goos Haenchen phase shift Goos Haenchen 相位移121.Graded index rod lens 梯度折射率棒透镜122.Group delay 群延迟123.Group velocity 群参数124.Half-wave plate retarder 半波延迟器125.Helium-Neon laser 氦氖激光器126.Heterojunction 异质结127.Heterostructure 异质结构128.Hole 空穴129.Hologram 全息图130.Holography 全息照相131.Homojunction 同质结132.Huygens-Fresnel principle 惠更斯-菲涅耳原理133.Impact-ionization 碰撞电离134.Index matching 指数匹配135.Injection 注射136.Instantaneous irradiance 自发辐射137.Integrated optics 集成光路138.Intensity of light 光强139.Intersymbol interference 符号间干扰140.Intrinsic concentration 本征浓度141.Intrinsic semiconductors 本征半导体142.Irradiance 辐射SER 激光144.active medium 活动介质145.active region 活动区域146.amplifiers 放大器147.cleaved-coupled-cavity 解理耦合腔148.distributed Bragg reflection 分布布拉格反射149.distributed feedback 分布反馈150.efficiency of the He-Ne 氦氖效率151.multiple quantum well 多量子阱152.oscillation condition 振荡条件ser diode 激光二极管sing emission 激光发射155.LED 发光二极管156.Lineshape function 线形结157.Linewidth 线宽158.Lithium niobate 铌酸锂159.Load line 负载线160.Loss c oefficient 损耗系数161.Mazh-Zehnder modulator Mazh-Zehnder 型调制器162.Macrobending loss 宏弯损耗163.Magneto-optic effects 磁光效应164.Magneto-optic isolator 磁光隔离165.Magneto-optic modulator 磁光调制166.Majority carriers 多数载流子167.Matrix emitter 矩阵发射168.Maximum acceptance angle 最优接收角169.Maxwell’s wave equation 麦克斯维方程170.Microbending loss 微弯损耗171.Microlaser 微型激光172.Minority carriers 少数载流子173.Modulated directional coupler 调制定向偶合器174.Modulation of light 光调制175.Monochromatic wave 单色光176.Multiplication region 倍增区177.Negative absolute temperature 负温度系数 round-trip optical gain 环路净光增益179.Noise 噪声180.Noncentrosymmetric crystals 非中心对称晶体181.Nondegenerate semiconductors 非简并半异体182.Non-linear optic 非线性光学183.Non-thermal equilibrium 非热平衡184.Normalized frequency 归一化频率185.Normalized index difference 归一化指数差异186.Normalized propagation constant 归一化传播常数187.Normalized thickness 归一化厚度188.Numerical aperture 孔径189.Optic axis 光轴190.Optical activity 光活性191.Optical anisotropy 光各向异性192.Optical bandwidth 光带宽193.Optical cavity 光腔194.Optical divergence 光发散195.Optic fibers 光纤196.Optical fiber amplifier 光纤放大器197.Optical field 光场198.Optical gain 光增益199.Optical indicatrix 光随圆球200.Optical isolater 光隔离器201.Optical Laser amplifiers 激光放大器202.Optical modulators 光调制器203.Optical pumping 光泵浦204.Opticalresonator 光谐振器205.Optical tunneling光学通道206.Optical isotropic 光学各向同性的207.Outside vapor deposition 管外气相淀积208.Penetration depth 渗透深度209.Phase change 相位改变210.Phase condition in lasers 激光相条件211.Phase matching 相位匹配212.Phase matching angle 相位匹配角213.Phase mismatch 相位失配214.Phase modulation 相位调制215.Phase modulator 相位调制器216.Phase of a wave 波相217.Phase velocity 相速218.Phonon 光子219.Photoconductive detector 光导探测器220.Photoconductive gain 光导增益221.Photoconductivity 光导性222.Photocurrent 光电流223.Photodetector 光探测器224.Photodiode 光电二极管225.Photoelastic effect 光弹效应226.Photogeneration 光子再生227.Photon amplification 光子放大228.Photon confinement 光子限制229.Photortansistor 光电三极管230.Photovoltaic devices 光伏器件231.Piezoelectric effect 压电效应232.Planck’s radiation distribution law 普朗克辐射法则233.Pockels cell modulator 普克尔斯调制器234.Pockel coefficients 普克尔斯系数235.Pockels phase modulator 普克尔斯相位调制器236.Polarization 极化237.Polarization transmission matrix 极化传输矩阵238.Population inversion 粒子数反转239.Poynting vector 能流密度向量240.Preform 预制棒241.Propagation constant 传播常数242.Pumping 泵浦243.Pyroelectric detectors 热释电探测器244.Quantum e fficiency 量子效应245.Quantum noise 量子噪声246.Quantum well 量子阱247.Quarter-wave plate retarder 四分之一波长延迟248.Radiant sensitivity 辐射敏感性249.Ramo’s theorem 拉莫定理250.Rate equations 速率方程251.Rayleigh criterion 瑞利条件252.Rayleigh scattering limit 瑞利散射极限253.Real image 实像254.Recombination 复合255.Recombination lifetime 复合寿命256.Reflectance 反射257.Reflection 反射258.Refracted light 折射光259.Refractive index 折射系数260.Resolving power 分辩力261.Response time 响应时间262.Return-to-zero data rate 归零码263.Rise time 上升时间264.Saturation drift velocity 饱和漂移速度265.Scattering 散射266.Second harmonic generation 二阶谐波267.Self-phase modulation 自相位调制268.Sellmeier dispersion equation 色列米尔波散方程式269.Shockley equation 肖克利公式270.Shot noise 肖特基噪声271.Signal to noise ratio 信噪比272.Single frequency lasers 单波长噪声273.Single quantum well 单量子阱274.Snell’s law 斯涅尔定律275.Solar cell 光电池276.Solid state photomultiplier 固态光复用器277.Spectral intensity 谱强度278.Spectral responsivity 光谱响应279.Spontaneous emission 自发辐射280.stimulated emission 受激辐射281.Terrestrial light 陆地光282.Theraml equilibrium 热平衡283.Thermal generation 热再生284.Thermal velocity 热速度285.Thershold concentration 光强阈值286.Threshold current 阈值电流287.Threshold wavelength 阈值波长288.Total acceptance angle 全接受角289.Totla internal reflection 全反射290.Transfer distance 转移距离291.Transit time 渡越时间292.Transmission coefficient 传输系数293.Tramsmittance 传输294.Transverse electric field 电横波场295.Tranverse magnetic field 磁横波场296.Traveling vave lase 行波激光器297.Uniaxial crystals 单轴晶体298.UnPolarized light 非极化光299.Wave 波300.W ave equation 波公式301.Wavefront 波前302.Waveguide 波导303.Wave n umber 波数304.Wave p acket 波包络305.Wavevector 波矢量306.Dark current 暗电流307.Saturation signal 饱和信号量308.Fringing field drift 边缘电场漂移plementary color 补色310.Image lag 残像311.Charge handling capability 操作电荷量312.Luminous quantity 测光量313.Pixel signal interpolating 插值处理314.Field integration 场读出方式315.Vertical CCD 垂直CCD316.Vertical overflow drain 垂直溢出漏极317.Conduction band 导带318.Charge coupled device 电荷耦合组件319.Electronic shutter 电子快门320.Dynamic range 动态范围321.Temporal resolution 动态分辨率322.Majority carrier 多数载流子323.Amorphous silicon photoconversion layer 非晶硅存储型324.Floating diffusion amplifier 浮置扩散放大器325.Floating gate amplifier 浮置栅极放大器326.Radiant quantity 辐射剂量327.Blooming 高光溢出328.High frame rate readout mode 高速读出模式329.Interlace scan 隔行扫描330.Fixed pattern noise 固定图形噪声331.Photodiode 光电二极管332.Iconoscope 光电摄像管333.Photolelctric effect 光电效应334.Spectral response 光谱响应335.Interline transfer CCD 行间转移型CCD336.Depletion layer 耗尽层plementary metal oxide semi-conductor 互补金属氧化物半导体338.Fundamental absorption edge 基本吸收带339.Valence band 价带340.Transistor 晶体管341.Visible light 可见光342.Spatial filter 空间滤波器343.Block access 块存取344.Pupil compensation 快门校正345.Diffusion current 扩散电流346.Discrete cosine transform 离散余弦变换347.Luminance signal 高度信号348.Quantum efficiency 量子效率349.Smear 漏光350.Edge enhancement 轮廓校正351.Nyquist frequency 奈奎斯特频率352.Energy band 能带353.Bias 偏压354.Drift current 漂移电流355.Clamp 钳位356.Global exposure 全面曝光357.Progressive scan 全像素读出方式358.Full frame CCD 全帧CCD359.Defect correction 缺陷补偿360.Thermal noise 热噪声361.Weak inversion 弱反转362.Shot noise 散粒噪声363.Chrominance difference signal 色差信号364.Colotremperature 色温365.Minority carrier 少数载流子366.Image stabilizer 手振校正367.Horizontal CCD 水平CCD368.Random noise 随机噪声369.Tunneling effect 隧道效应370.Image sensor 图像传感器371.Aliasing 伪信号372.Passive 无源373.Passive pixel sensor 无源像素传感器374.Line transfer 线转移375.Correlated double sampling 相关双采样376.Pinned photodiode 掩埋型光电二极管377.Overflow 溢出378.Effective pixel 有效像素379.Active pixel sensor 有源像素传感器380.Threshold voltage 阈值电压381.Source follower 源极跟随器382.Illuminance 照度383.Refraction index 折射率384.Frame integration 帧读出方式385.Frame interline t ransfer CCD 帧行间转移CCD 386.Frame transfer 帧转移387.Frame transfer CCD 帧转移CCD388.Non interlace 逐行扫描389.Conversion efficiency 转换效率390.Automatic gain control 自动增益控制391.Self-induced drift 自激漂移392.Minimum illumination 最低照度393.CMOS image sensor COMS 图像传感器394.MOS diode MOS 二极管395.MOS image sensor MOS 型图像传感器396.ISO sensitivity ISO 感光度。
Photonic-crystal slow-light enhancement of nonlinear phase sensitivity
Photonic-crystal slow-light enhancementof nonlinear phase sensitivityMarin Soljacˇic´and Steven G.JohnsonDepartment of Physics and Center for Materials Science and Engineering,Massachusetts Institute of Technology,Cambridge,Massachusetts02139Shanhui FanDepartment of Electrical Engineering,Stanford University,Stanford,California94305Mihai Ibanescu,Erich Ippen,and J.D.JoannopoulosDepartment of Physics and Center for Materials Science and Engineering,Massachusetts Institute of Technology,Cambridge,Massachusetts02139Received November15,2001;revised manuscript received February15,2002;accepted February21,2002 We demonstrate how slow group velocities of light,which are readily achievable in photonic-crystal systems,can dramatically increase the induced phase shifts caused by small changes in the index of refraction.Suchincreased phase sensitivity may be used to decrease the sizes of many devices,including switches,routers,all-optical logical gates,wavelength converters,and others.At the same time a low group velocity greatlydecreases the power requirements needed to operate these devices.We show how these advantages can be used to design switches smaller than20mϫ200m in size by using readily available materials and at mod-est levels of power.With this approach,one could haveϳ105such devices on a surface that is2cm ϫ2cm,making it an important step towards large-scale all-optical integration.©2002Optical Society of AmericaOCIS code:900.9040.1.INTRODUCTIONThe size of high-speed active elements is currently a criti-cal problem in the path toward large-scale optical integra-tion.The smallest all-optical and electro-optical switches are of the order of millimeters1–3with little promise of getting much smaller.The reason for this problem is that the changes in the index of refraction in-duced by electro-optical or nonlinear optical effects,which are used to operate the devices,are very small[␦n is O(0.001)].If one wants to use an induced␦n to shift the phase of a signal byafter propagating through a lengthL of some material,the induced phase change is thenϭ2L␦n/AIR⇒LϭAIR/2␦n,requiring the size of the device to be millimeters or more.(A phase change ofcan be used to switch the signal on or off by one’s placing the material in an interferometer.For example, one could use a Mach–Zehnder interferometer,which we describe below.)It is well known that nonlinear effects can be enhanced in systems with slow group velocity as a result of the com-pression of the local energy density.Our observation in this paper is that the sensitivity of the phase to the in-duced change in the index of refraction can be drastically enhanced if one operates in the regimes of slow group ve-locities.Slow group velocities occur quite commonly in photonic crystals and in systems with electromagneti-cally induced transparency.4–7According to perturbation theory,the induced shift in the optical frequency of a pho-tonic band mode at afixed k that is due to a small␦n is given by␦(k)/ϭϪ(␦n/n)wherespecifies the frac-tion of the total energy of the mode in question that is stored in the region where␦n is being applied.How-ever,because the induced phase shift actually depends on␦k,the phase shift can be greatly enhanced if v G ϭd/d k is small,as illustrated in Fig.1.More pre-cisely,the induced phase shift is␦ϭL*␦kϷL*␦/(d/d k)⇒␦ϷL␦n/(nv G).In other words,if␦ϭϪ,we haveLAIRϷ12ͩn␦nͪͩv G cͪ,(1)or for a given␦n the size of the device scales linearly with v G.An electro-optical device that is smaller in length by a factor of v G/c also requires v G/c less power to operate, which is perhaps an even more important consideration for large-scale integration.Thus for an electro-optic modulator or a switch the device enhancement is a factor of(v G/c)2.The same improvement by(v G/c)2is achieved in an all-optical gate by use of the Kerr effect. In this case,the␦n change is self-induced by the signal itself,and␦n is proportional to the local electricfield squared.The savings in the length of the device is the same v G/c as for an electro-optic device.In addition,be-cause of the small v G,the energy of the pulse is tempo-rally compressed by a factor of v G/c,so the induced␦n is0740-3224/2002/092052-08$15.00©2002Optical Society of America1/(v G /c )times larger.Thus for a pulse of a fixed total en-ergy,we can actually use a device that is smaller by a fac-tor of approximately (v G /c )2.2.IMPROVEMENTS OFFERED BYPHOTONIC CRYSTALSPhotonic crystals (PCs)are ideal systems in which one can achieve arbitrarily low group velocities.8–10PCs are artificially created materials in which the index of refrac-tion has a one-dimensional,a two-dimensional (2-D),or a three-dimensional (3-D)periodicity.Under appropriate conditions and when the maximum index contrast is suf-ficiently large,a photonic bandgap appears:a range of frequencies in which light cannot propagate in the crys-tal.Because of this gap,photons inside a PC have many properties that are similar to electrons in semiconductors.Consequently,PCs are considered to be promising media for large-scale integrated optics.In particular,line de-fects in a PC can lead to guided-mode bands inside the photonic bandgap.These bands can,in principle,be made as flat as desired by the appropriate design.Typi-cal group velocities for reasonable linear defect guided modes can easily be O (10Ϫ2c Ϫ10Ϫ3c ),thus making it possible to shrink the size of all-optical andelectro-opticalFig.1.Induced change in the photonic band frequency in a ma-terial depends mostly on the induced index of refraction change.However,depending on the local group velocity,this can lead to drastically different changes in the wave vector.Here we show this effect for two dispersion curves:the slow-light band with v G ϭ0.022c used in a device proposed in this paper (green),and the dispersion curve of a uniform material with n ϭ3.5(blue).We apply the same frequency shift (␦ϭ0.001)to both disper-sion curves to get the respective dashed curves.As we can see,the same ␦(black)leads to two very different ␦k(red).Fig.2.Sketch of the Mach –Zehnder interferometer that we used to demonstrate enhancement of nonlinear phase sensitivity that is due to slow light in PCs.The slow-light system that we use is a coupled-cavity waveguide (CCW),as shown in the upper left-hand enlarged area of this figure.(Throughout the paper,cavities are colored green to make them more visible).The signal enters the device on the right,is split equally at the first T branch into the upper and the lower waveguides,and recombines at the T branch on the left.If no index change is induced,the parts of the signal coming from the top and the bottom interfere constructively at the second T branch,and the pulse exists entirely at the output.If we induce the index change in the active region in an appropriate manner,the two parts of the signal interfere destructively,and the pulse is reflected back toward the input,with no signal being observed at the output.The points marked (A),(B),and (C)correspond to field-monitor points during the simulations.The results of observations from these points are displayed in Fig.3.devices in PCs by approximately(v G/c)2ϳ10Ϫ4–10Ϫ6, while keeping the operating powerfixed.Group velocity of c/100was experimentally demonstrated in a photonic crystal system recently.11For definiteness,we focus our attention on a particular class of PC line-defect systems that can have low group velocities;namely,we discuss coupled-cavity wave-guides12,13(CCWs).Nonlinear properties of CCWs(also called coupled resonator optical waveguides)were very recently summarized in Ref.14.A CCW consists of many cavities,as shown in Fig.2.Each of these cavities when isolated supports a resonant mode with the resonant fre-quency well inside the bandgap.When we bring such cavities close to each other to form a linear defect,as is shown in Fig.2,the photons can propagate down the de-fect by tunneling from one cavity to another.Conse-quently,the group velocity is small,and the less closely coupled the cavities are,the slower the group velocity. Group velocities of c/1000or even smaller are easy to at-tain in such systems.Because the cavities in a CCW are so weakly coupled to each other,the tight-binding method12–17is an excellent approximation in deriving the dispersion relation.The result is(k)ϭ⍀͓1Ϫ⌬␣ϩcos(k⌳)͔,where⍀is the single-cavity resonant frequency,⌳is the physical dis-tance between the cavities,and⌬␣ӶӶ1in the tight-binding approximation,so we can approximate⌬␣ϭ0in our analysis.The CCW system has a zero-dispersion point at kϭ/2⌳.We choose this to be the operation point of our devices because the devices in that case have far larger bandwidths than most other slow-light systems would have;in our simulations the useful bandwidth of such CCW devices is typically more than1/3of the entire CCW band.(For example,in a Mach–Zehnder interferom-eter,useful bandwidth would be defined as the range of values ofin which the extinction ratio is less than99% when the device is in its OFF state.)To see that the CCW system is optimal with respect to bandwidth,we note that,to maximize the bandwidth,one wants⌬k ϵk(,nϩ␦n)Ϫk(,n)to be as independent ofas possible,for as large a range ofas possible.One way to satisfy this condition is,for example,if k()is nearly linear and if the dominant effect of␦n is to shift k() upward or downward by a nearly constant amount.This approach is precisely what happens in CCW sys-tems.First,note that(k,␦n)ϭ⍀(1ϩ␦1)͓1ϩ(1ϩ␦2)cos(k⌳)͔,where␦1and␦2are thefirst order in␦n. Thus␦n shifts the curve upward by⍀␦1and also changes the slope at the zero-dispersion point:→(1ϩ␦1)(1ϩ␦2).But,because the slope was so small to start with (asӶ1in slow-light systems),the dominant effect in ⌬k(,␦n)is the linear shift upward,which produces a term independent of.To make the claim from the previous paragraph more precise,we can expand(k,␦n)about the zero-dispersion point and invert the relation to get k(,␦n) and thereby⌬k(,␦n)Ϸ͓␦1/⍀ϩ␦2(/⍀Ϫ1)͔/⌳. Moreover,because we are working with a slow-light band, we are interested only inthat can be written as ϭ⍀ϩ␦,where␦Ӷ⍀.Thus⌬k(␦,␦n)Ϸ͕␦1ϩ͓(␦/⍀)*(␦1ϩ␦2)͔͖/⌳,and,because␦/⍀Ӷ1,⌬k is almost constant across most of the slow-light band.In fact,a similar derivation can easily be adapted to apply for any zero-dispersion point of anyflat dispersion curve. Consequently,if one wants to use slow light to enhance the nonlinear phase sensitivity,one should operate at a zero-dispersion point because this optimizes the available bandwidth of the device,even in non-CCW systems.3.SLOW-LIGHT PHOTONIC-CRYSTAL MACH–ZEHNDER DEVICESTo demonstrate how the ideas presented above can be put to work in practice,we perform numerical-simulation studies of a2-D CCW system.The system is illustrated in Fig.2.It consists of a square lattice of high-⑀dielec-tric rods(⑀Hϭ12.25)embedded in a low-⑀dielectric ma-terial(⑀Lϭ2.25).The lattice spacing is denoted a,and the radius of each rod is rϭ0.25a.The CCW is created by the reduction of the radius of each fourth rod in a line to r/3,so⌳ϭ4a.We focus our attention on TM modes, which have electricfields parallel to the rods.To begin our study of the modes of this system,we per-form frequency-domain calculations by using precondi-tioned conjugate gradient minimization of the Rayleigh quotient in a2-D plane-wave basis,as described in detail in Ref.18.To model our system,we employ a supercell geometry of size(11aϫ4a)and a grid of72points/a. The results reveal an18%photonic bandgap between MINϭ0.24(2c)/a andMAXϭ0.29(2c)/a.Adding a line defect of CCWs mutually spaced⌳apart leads to a CCW band that can be excellently approximated by ϭ͓0.26522Ϫ0.00277cos(k⌳)͔(2c/a).This gives v G ϭ0.0695c at the point of zero dispersion for the case of ⌳ϭ4a.(To demonstrate our ideas,we use a v G that is not extraordinarily small to be less demanding on the time-domain numerical simulations.)The frequency-domain calculation further tells us that roughly50%of the energy of each mode is in the high-⑀regions and that this ratio is fairly independent of k.To put things in perspective,we can use the frequency-domain code results to estimate sizes of some real devices. For purposes of illustration only,we simulate a device in which we modify the high-⑀material by␦n/n Hϭ2ϫ10Ϫ3to perform the switching,say,through an electro-optical effect.We pick a somewhat unrealistically large ␦n/n H to lower the requirements on our numerical simu-lations;as mentioned earlier,the length of the system varies inversely with␦n/n H,and we can scale our results to experimentally realizable␦n accordingly.Let us now ask how long the CCW has to be for the signal to accumu-late an exactphase shift when propagating down this CCW compared with the case when␦nϭ0.We run the frequency-domain code twice with the two different val-ues of⑀H for18uniformly distributed k between kϭ0 and k at the edge of thefirst Brillouin zone.Next,we perform the tight-binding curvefits to the two sets of data.From these twofitted curves it is trivial to get⌬k at the point of zero dispersion and thereby L from the re-lation L⌬kϭ.The result is that the CCW has to be approximately Lϭ31.6⌳ϭ35.5AIR long to achieve aphase shift when propagating down this CCW.Based on what we learned from the frequency-domain calculations,we can now design a Mach –Zehnder interferometer for use in the time domain.Specifically,we perform 2-D finite-difference time-domainsimulations 19with perfectly matched layer absorbing boundary conditions.20Our numerical resolution is 24ϫ24points/a 2,meaning that the entire computa-tional cell is 5000ϫ696points.Because our computa-tional cell is large enough,we can easily distinguish the pulses reflected from the boundaries of our simulation from the real physical pulses.For the waveguides,we use the CCWs as described above.The time-domain simulation reveals that there is a slow-light band be-tween MIN ϭ0.2620(2c )/a and MAX ϭ0.2676(2c )/a ,which is within 0.2%of the frequency-domain predic-tion.Next,we use results of previous research to imple-ment the needed 90°bends 21and T branches.22At the input of our Mach –Zehnder interferometer,we launch a pulse with a Gaussian frequency profile,a carrier frequency of 0ϭ0.2648(2c )/a ,and a FWHM of ⌬/0ϭ1/200.During the simulations,we monitor the electric field E (t )at eight points in the system.We show the placement of three of these points in Fig.2.The ob-servations at the other five points (which include the branch points and the end points)provide us with no new information but are monitored just to ensure self-consistency.When ␦n is OFF ,as in the first column of Fig.3,the signal comes in at the input,splits equally into the two arms at the first branch,and recombines at the second branch,traveling toward the output,as seen in Fig.4.Apart from very small reflections (approximately 2%)that are due to the lack of full,optimized branches,most of the signal reaches the output.Next we change the high-index material to n H →(1ϩ0.00166)n H in the upper half of the active region shown in Fig.2and n H →(1Ϫ0.00166)n H in the lower half of the active re-gion shown in Fig.2.23Because of this difference in n H ,the part of the signal traveling in the upper armaccumu-Fig.3.Demonstration of nonlinear switching in a slow-light PC system.The electric field squared is plotted as a function of time,observed at three different points:(A),(B),and (C)in the system of Fig.2.The left-hand column corresponds to the case when no index change is induced;most of the incoming signal at (A)exits at the output (C).The column on the right-hand side corresponds to the case when the nonlinear index change is induced;the signal at the output (C)in the right-hand column is drastically reduced compared with the output (C)in the left-hand column.The black and the blue signals represent the pulses traveling from right to left and left to right,respectively,in Fig.2.The gray pulses are spurious reflections (mostly from the interface between the PC and air at the exits of the device).latesmore phase shift than the half traveling in the lower arm.24Thus the signal interferes destructively at the output,and is reflected back toward the input,as can be seen from Fig.5.Even without anyfine tuning,we observe a signal at the output that is16.4dB smaller than in the case when␦n is not applied.As was mentioned above,CCWs have an added benefit in that the bandwidth of the device above is optimal be-cause of the existence of the zero-dispersion point.For example,the useful bandwidth of the device of Figs.2–5 is⌬/0Ϸ1/150.The useful bandwidth of the CCW de-vices scales roughly linearly with v G/⌳for small␦n.Onthe other hand,the performance gets better with1/v G2. Therefore,if we are willing to have a device with a smaller useful bandwidth,we can have a much more effi-cient device.For example,a40-Gbit/s telecommunica-tions stream has a bandwidth of⌬/0Ϸ1/3000,so we can afford to operate the device with pulses that have400 times less energy than when using the device of Figs.2–5 for the same device size.An additional savings of power occurs in CCW systems because most of the power is tightly confined to the cavities.In contrast,in a uniform waveguide power is uniformly distributed along it.This fact typically produces an additional power savings of a factor of2–3or more,depending on the geometry of the system.To make the idea of the previous paragraph a bit more explicit,we explore the possibility of an all-optical device with more optimized parameters.We envision a system similar to that of Figs.2–5but with coupled cavities spaced six lattice periods apart,so⌳ϭ6a.In this casethe group velocity is0.022c(approximately a factor of3slower than in the case above).Now we use the distribu-tion of thefields given by the frequency-domain code tocalculate[by usingfirst-order perturbation theory in thesmall quantity␦n(r)/n(r)]what happens to the slow-light band after the nonlinear Kerr effect is turned on.We apply the Kerr effect only in the high-index regionsbecause high-index materials typically have nonlinear co-efficients that are much higher than those of low-indexmaterials.We now pick physically realistic parametersso that the largest induced␦n/n anywhere is2ϫ10Ϫ4. In this case,the perturbation theory tells us that,ifwe operate at the zero-dispersion point and the Kerreffect is present only in one arm of the interferometer,the length of the device has to be70.97⌳ϭ175m at ϭ1.55m.The transverse size of the device would then be roughly20m.Suppose that our high-index ma-terial has a Kerr coefficient of n2ϭ1.5ϫ10Ϫ13cm2/W (which is a value achievable in a number of materials,GaAs at0ϭ1.55m being one of them),where the Kerr effect is given by␦nϭn2I.In that case,we would need roughly0.26W of peak power to operate our device.(For comparison,an integrated-optics device made of same (uniform)high-index material with a cross-sectional area of0.5mϫ0.5m would have to be5cm long to operate at the same0.26-W peak power.)The useful bandwidth of our device would be at least⌬/0Ϸ1/670,meaning that it could operate at bit rates greater than100Gbits/s. For lower bit rates with less bandwidth theperformance Fig.4.Snapshots of the electricfield pulse in the system of Fig.2for the case when no index change is induced.The top panel rep-resents120,000time steps,and bottom panel160,000time steps.The signal entering at the input exits at the output of the device;the device is in its ON state.enhancements could be even greater.Finally,even the design outlined here can be further improved by our con-fining more energy into high-⑀regions,(for example,by use of a triangular-lattice PC system with air holes in di-electric)or by our increasing the index contrast between the high-⑀and the low-⑀materials.By optimizing the de-sign along these lines,one should be able to enhance the system by additional factors of 3–4without much effort.4.PHOTONIC CRYSTAL 1Ã2SWITCHThe switching mechanism in this paper is general enough for use in a variety of all-optical logical operations,switching,routing,wavelength conversion,and optical imprinting.For example,we can enhance the applicabil-ity of our design by allowing the device to have two outputs (as shown in the upper plot of Fig.6)instead of just one (as shown in Fig.2).In this case the nonlinear mechanism in question directs input to either of the two outputs.To achieve this,we put a directional coupler at the output of the device instead of terminating the device with a simple branch.The directional coupler has to be designed so that (depending on the relative phase of its two inputs)it directs both of them either to the upper or the lower of its two outputs.Almost any directional cou-pler can be designed to perform this function.A PC implementation could be based on the waveguide drop-filter design of Ref.25.For this application,we need only to operate it at a frequency that is offset from that originally intended.An advantage of this particular design is that it adds only 1to the length of the entire device.The device of Ref.25involves twolinearFig.5.Snapshots of the electric field pulse in the system of Fig.2for the case when an index change is induced.Top panel represents 120,000time steps,the middle panel 160,000time steps,and the bottom panel 200,000time steps.The signal entering at the input is reflected back toward the input;device is in its OFF state.waveguides and a coupling element (consisting of twopoint-defect cavities)between them,as shown in the inset of the upper panel of Fig.6.If we label the waveguides as 1and 2,we can writeA OUT1ϭA IN1ͩ1Ϫi ␣Ϫ0ϩi ␣ͪϪA IN2ͩi ␣Ϫ0ϩi ␣ͪ,A OUT2ϭA IN2ͩ1Ϫi ␣Ϫ0ϩi ␣ͪϪA IN1ͩi ␣Ϫ0ϩi ␣ͪ,(2)where A OUT j and A IN j are the amplitudes at the output and the input,respectively,of waveguide j the central fre-quency of the two coupled cavities is 0,and 2␣is the width of the resonance.In our device,we will have equal intensities coming to both inputs,and we would like all the energy to exit at a single output.If we look at this picture from a time-reversed perspective,this tells us that we have to operate the directional coupler at the fre-quency 0Ϯ␣,rather than operating it at ϭ0,as was done in Ref.25.This time-reversed picture also tells us that [according to Eqs.(2)],if we choose to operate at frequency 0ϩ␣,we get 100%transmission at the out-put of waveguide 2if the input of waveguide 2lags wave-guide 1in phase by exactly /2.We get 100%transmis-sion at the output of waveguide 1if the input of waveguide 2is /2ahead.The dependence of transmis-sion on the phase difference ⌬between waveguides 1and 2is illustrated in the lower plot of Fig.6.Operating at the frequency 0Ϫ␣reverses this relative phase de-pendence.For example,let us pick as the operating frequency 0ϩ␣and say that the intensities entering the device from the two waveguides are the same distance apart for the fact that waveguide 2lags waveguide 1in phase by /2.ThenI OUT1I IN1ϩI IN2ϭ12͑Ϫ0Ϫ␣͒2͑Ϫ0͒2ϩ␣2,I OUT2I IN1ϩI IN2ϭ12͑Ϫ0ϩ␣͒2͑Ϫ0͒2ϩ␣2,(3)where I IN1,IN2and I OUT1,OUT2denote the intensities at the inputs and the outputs of the respective waveguides.Ac-cording to Eqs.(3),the useful bandwidth of this direc-tional coupler approximately equals 2␣.In contrast to Ref.25,we are not forced to operate in the regime of very small ␣;consequently,2␣can readily be designed to be larger than the bandwidth of our Mach –Zehnder interfer-ometer,so the directional coupler will not impair the per-formance of the device.5.CONCLUDING REMARKSThe sizes of the nonlinear devices described in this paper that use physically realistic values of ␦n are small enough to contain 105of them on a chip of surface size 2cm ϫ2cm,operated at moderate pulse energy levels,and with speeds greater than 100Gbits/s.Therefore,we view the research described here as an important step to-ward enabling large-scale integration of truly all-optical logic circuits.Finally,it should be emphasized that all the results and arguments presented in this paper (which has focused on simplified 2-D models)apply immediately to three dimensions.In fact,very recently,new 3-D PC structures have been introduced that reproduce the prop-erties of linear and point defect modes in 2-D PC systems.26,27Such 3-D structures should prove to be ideal candidates for the eventual practical realization of the nonlinear slow-light designs discussed in thispaper.Fig.6.Mach –Zehnder interferometer operating as a router be-tween two different outputs.This operation is achieved by the termination of the interferometer with a directional coupler rather than with a T branch,as shown in the upper panel.The lower panel gives the calculated intensity at each of the two out-puts as a function of the phase difference between the upper and the lower input to the directional coupler.ACKNOWLEDGMENTThis study was supported in part by the Materials Research Science and Engineering Center program of the National Science Foundation under grant DMR-9400334.REFERENCES AND NOTES1.W.E.Martin,‘‘A new waveguide switch/modulator for inte-grated 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优美斯(Optimax Systems)的相位平移干扰光学测量方法白皮书说明书
The Effect Of Phase Distortion On InterferometricMeasurements Of Thin Film Coated Optical SurfacesJon Watson, Daniel SavageOptimax Systems, 6367 Dean Parkway, Ontario, NY USA*********************©Copyright Optimax Systems, Inc. 2010This paper discusses difficulty in accurately interpreting surface form data from a phase shifting interferometer measurement of a thin film interference coated surfaces.PHASE-SHIFTING INTERFEROMETRYPhase-shifting interferometry is a metrology tool widely used in optical manufacturing to determine form errors of an optical surface. The surface under test generates a reflected wavefront that interferes with the reference wavefront produced by the interferometer 1. A phase-shifting interferometer modulates phase by slightly moving the reference wavefront with respect to the reflected test wavefront 2 . The phase information collected is converted into the height data which comprises the surface under test3.Visibility of fringes in an interferometer is a function of intensity mismatch between the test and reference beams. Most commercially available interferometers are designed to optimize fringe contrast based on a 4% reflected beam intensity. If the surface under test is coated for minimum reflection near or at the test wavelength of the interferometer, the visibility of the fringe pattern can be too low to accurately measure.OPTICAL THIN-FILM INTERFERENCE COATINGSOptical thin-film interference coatings are structures composed of one or more thin layers (typically multiples of a quarter-wave optical thickness) of materials deposited on the surface of an optical substrate.The goal of interference coatings is to create a multilayer film structure where interference effects within the structure achieve a desired percent intensity transmission or reflection over a given wavelength range.The purpose of the coating defines the design of the multilayer structure. Basic design variables include:• Number of layers• Thickness of each layer• Material of each layerThe most common types of multilayer films are high reflector (HR) and anti-reflection (AR) coatings. HR coatings function by constructively interfering reflected light, while AR coatings function by destructively interfering reflected light. These coatings are designed to operate over a specific wavelength range distributed around a particular design wavelength.To produce the desired interference effects, thin-film structures are designed to modulate the phase of the reflected or transmitted wavefront. The nature of the interference effect depends precisely on the thickness of each layer in the coating as well as the refractive index of each layer. If the thickness and index of each layer is uniform across the coated surface, the reflected wavefront will have a constant phase offset across the surface. However, if layer thicknesses or index vary across the coated surface, then the phase of thereflected wavefront will also vary. Depending on the design of the coating and the severity of the thickness or index non-uniformity, the distortion of the phase of the reflected wavefront can be severe. 4Layer thickness non-uniformity is inherent in the coating process and is exaggerated by increasing radius of curvature of the coated surface.5 All industry-standard directed source deposition processes (thermal evaporation, sputtering, etc) result in some degree of layer thickness non-uniformity.5 Even processes developed to minimize layer non-uniformity, such as those used at Optimax, will still result in slight layer non-uniformity (within design tolerance).TESTING COATED OPTICS INTERFEROMETRICALLYPhase-shifting interferometers use phase information to determine the height map of the surface under test. However, surfaces coated with a thin-film interference coating can have severe phase distortion in the reflected wavefront due to slight layer thickness non-uniformities and refractive index inhomogeneity. Therefore, the measured irregularity of a coated surface measured on a phase shifting interferometer at a wavelength other than the design wavelength, may not represent the actual irregularity of the surface. Even using a phase shifting interferometer at the coating design wavelength does not guarantee accurate surface irregularity measurements. If a coating has very low reflectance over any given wavelength range (such as in the case of an AR coating), the phase shift on reflection with wavelength will vary significantly in that range.7 Figure 1 shows an example of how the phase can vary with coating thickness variations.Figure 1In this particular case, if a point at the lens edge has the nominal coating thickness and the coating at lens center is 2% thicker, expect ~38° phase difference in the measurement (~0.1 waves). This will erroneous be seen as height by the interferometer, despite the actual height change in this case being less than 7nm (~0.01 waves). Also, depending on coating design, low fringe visibility may inhibit measurements.There is an extreme method to determine the irregularity of a thin-film interference coated surface by flash coating it with a bare metal mirror coating. A metal mirror coating is not a thin-film interference coating, and the surface of the mirror represents the true surface, This relatively expensive process requires extra time, handling, and potential damage during the metal coating chemical strip process.CONCLUSIONS•There can be practical limitations to getting accurate surface form data on coated optical surfaces due to issues with phase distortion and fringe visibility.•The issues are a function of thin film coating design particulars and the actual deposition processes.1 R.E. Fischer, B. Tadic-Galeb, P. Yoder, Optical System Design, Pg 340, McGraw Hill, New York City, 20082 H.H. Karow, Fabrication Methods For Precision Optics, Pg 656, John Wiley & Sons, New York City, 19933 MetroPro Reference Guide OMP-0347J, Page 7-1, Zygo Corporation, Middlefield, Connecticut, 20044 H.A. Macleod, Thin Film Optical Filters, Chapter 11: Layer uniformity and thickness monitoring, The Institute of Physics Publishing, 2001.5 R.E. Fischer, B. Tadic-Galeb, P. Yoder, Optical System Design, Pg 581, McGraw Hill, New York City, 2008。
Analyzing the properties of transparent ceramics
Analyzing the properties oftransparent ceramicsIntroductionTransparent ceramics are a unique class of materials that offer a combination of optical, mechanical, and thermal properties. These materials have been extensively studied in the scientific community due to their unique set of properties, which make them ideal for various applications.Properties of Transparent Ceramics1. Optical Properties: Transparency is the most important characteristic of transparent ceramics. These materials have a high degree of transparency in the visible to near-infrared region of the electromagnetic spectrum. Most transparent ceramics have a transparency of over 80% in the visible light region, making them ideal for use in optical devices such as lenses, windows, and mirrors. The high transparency of transparent ceramics is due to their crystal structure, which is perfect in terms of absence of structural defects.2. Mechanical Properties: Transparent ceramics exhibit excellent mechanical properties that make them ideal for high load and high-temperature applications. They have high hardness, high fracture toughness, and high chemical resistance. These properties make them ideal for use in harsh environments such as aerospace, defence, and nuclear industries. Transparent ceramics can also be used as cutting tools, wear-resistant coatings, and protective armour.3. Thermal Properties: Transparent ceramics have excellent thermal properties that make them ideal for use in applications that require high-temperature stability. They have a low coefficient of thermal expansion, high thermal conductivity, and high thermal shock resistance. These properties enable them to withstand high-temperature stresseswithout cracking or losing their transparency. Transparent ceramics are ideal for use in high-temperature furnaces, high-temperature sensors, and thermoelectric devices.Applications of Transparent Ceramics1. Optics: Transparent ceramics are ideal for use in optical devices due to their excellent transparency. They can be used as optical windows, lenses, and filters in various optical systems such as telescopes, microscopes, and cameras.2. Aerospace: Transparent ceramics are ideal for use in aerospace applications due to their excellent mechanical and thermal properties. They can be used as protective coatings, thermal insulation, and structural components in spacecraft and aircraft.3. Defence: Transparent ceramics are also ideal for use in defence applications due to their excellent mechanical and thermal properties. They can be used as armours, cutting tools, and radar reflectors in defence systems.4. Energy: Transparent ceramics can be used in energy applications such as solar cells, fuel cells, and thermoelectric generators. They have a low coefficient of thermal expansion and high thermal conductivity, making them ideal for use in high-temperature environments.ConclusionTransparent ceramics possess a unique set of properties that make them ideal for various industrial and scientific applications. These materials offer high transparency, excellent mechanical properties, and excellent thermal properties. The applications of transparent ceramics range from optics to defence, aerospace, and energy. The study of transparent ceramics is ongoing, and researchers are continuously exploring new applications and improving the properties of these materials.。
Maya 2009名词词汇中英对照
引用Maya 2009词汇Incandescence(白炽)Transparency(透明的Color Ramp Input(颜色色彩渐变输入)Light Glow(灯光辉光)Map(贴图)Light Effects(灯光效果)Halo(光晕)Lens Flare(镜头眩光)Optical FX(光学特效)Star Points(星点)Rotation(旋转)Halo Type(光晕类型)Glow Type(辉光类型)Linear(线性)Rim Halo(边缘光晕)Lens Flare Attributes(镜头眩光属性)了Glow Radial Noise(辉光放射杂点)Radial Frequency(放射频率Hypershade(材质超图)Filter Size(滤镜大小)Depth Map ShadowAttributes(深度贴图阴影属性)Resolution(分辨率)Fur(毛皮)Paint Effects(画笔效果)Light Fog(灯光雾)和Hair System(毛发系统)Disk Based Dmaps(基于硬盘的深度贴图)是Add Frame Ext(添加帧扩展)Use Mid Dist(使用中间距离)伪影(artifact)Bias(偏心率)Use Only Single Dmap(只使用单一的深度贴图)View Image(查看图像)Casts Shadows(投射阴影)Receive Shadows(接收阴影)Render Stats(静止渲染)和Use Auto Focus(使用自动焦距)Cone Angle(锥角)Focus(焦距)Panels(面板)Look Through Selected(浏览选取)Samples(采样)Softness(柔和)Disc(圆盘)Reuse Existing Dmap(s)(重新使用现有的深度贴图)Illuminates By Default(默认照明)Light Radius(灯光范围)Shadow Rays(阴影射线)Shadow Rays(阴影射线)Ray Depth Limit(射线深度限定)Simple Paint Effects(简单画笔效果)Fog Shadow Samples(雾阴影采样)2D Offset(二维偏移)Fake Shadow(仿造阴影)Cast Shadows(投射阴影)Fake Shadow(伪阴影)Shadow Diffusion(阴影漫射)Shadow Transp(阴影透明度)Back Shadow(背面阴影)Depth Shadow(阴影深度)Center Shadow(中心阴影)Threshold(阈值)Add To Selected Light(添加到选择的灯光)Render Using(渲染使用)Quality Presets(质量预设)Back Shade Factor(背面投影因子)Self Shade(自投影)Self Shade Darkness(自投影黑暗度)Intensity Multiplier(强度加强器)Import Maya File name of hair file(导入Maya文件毛发文件名)Timeline(时间轴)Set StartPosition(设置起始位置)Display Quality(显示质量)Hair Tube Shader(毛发管道明暗器)Tube Direction(管道方向)Paint Effects To Polygons(画笔效果转到多边形)Convert(转换)Anisotropic(非均匀)Visible In Reflections(可视反射)Filter Size(滤镜大小)Penumbra(半阴影)Interpolation(内插)Smooth(平滑)Set Key(设置关键帧)Graph Editor(图表编辑器)明暗器(shader)Multilister(多重列表)With Shading Group(具有阴影组)Create Render Node(创建渲染节点)Bump Mapping(凹凸贴图)Translucence(半透明度)Translucence Depth(半透明深度)Anisotropic(各向异性的)Diffuse(散射)Translucence Depth(半透明深度)Cosine Power(余弦次方)Eccentricity(离心率)Roughness(粗糙度)Specular Color(镜面颜色)Spread X(X伸展)Spread Y(Y伸展)Fresnel Index(菲涅耳索引)Out Color(输出颜色)Surface Shader(曲面明暗器)Image Plane(图像平面)Ramp Shader(颜色渐变明暗器)Cloth(布料)Perlin noise(柏林杂点)Water(水)Bitmap(位图)Square(正方形)Bright Spread(亮度伸展)Wave Time and Wave Velocity(波纹时间和波纹速率)Wave Amplitude(波纹振幅)Wave Frequency(波纹频率)Sub Wave Frequency(副波纹频率)Concentric Ripple Attributes(同心波纹属性)Number Of Waves(波纹数目)Ocean(海洋)Photon Intensity(光子强度)Ocean System(海洋系统)Fluid Effects(液体效果)Maya Noise(Maya杂点)Exponent(指数)Color Gain(色彩增益)Rock Color(岩石颜色)Snow Color(雪的颜色)Amplitude(振幅)Boundary(边界)Snow Altitude(雪的高度)Snow Dropoff(雪的下降)Snow Slope(雪的倾斜度)Ramps(色彩渐变)Bitmaps(位图)Square(正方形)Grid(栅格)Bulge(膨胀)Checker(棋盘格)Square(正方形)Color Remap(颜色的重贴图)Filter Offset(滤镜偏移)Invert(颠倒)Fluid Texture 3D(三维液体纹理)Granite(花岗岩)贴图分级细化(mipmapping)Blend Mode(混合模式)placement(布置)Create Render Node(创建渲染节点)Mipmap(贴图细化)Bump Depth(凹凸深度)Reflected Color(反射颜色)Projection(投影)random(随机的)natural(自然的)granular(颗粒状的)abstract(抽象的)Create Render Node(创建渲染节点)Brownian Motion(布朗运动)Lacunarity(缺项)Increment(增量)Octaves(倍频程)Weight3d(三维重量)Threshold(阈值)Amplitude(幅度)Billow(巨浪)Num Waves(波浪数量)的Volume Wave(体积波浪)Ratio(变换系数)Depth Max(最大深度)Frequency Ratio(频率变换系数)Depth Max(最大深度)Inflection(变形)Scale(缩放)Origin(原点)Solid Fractal(固体不规则碎片)Animated(动画)Time Ratio(时间变换系数)Fill Texture Seams(填充纹理接缝)Bake Transparency(烘焙透明度)Double Sided(双面)Convert to File Texture(转换到纵列纹理)Anti-Alias(反锯齿)Concentric(同中心的)Cylindrical(圆柱的)Spherical(球形的)Translate(转化)Normal Camera(常规相机)Connection Editor(连接编辑器)Connect Input Of(输入连接)Master Bins(主箱子)Create Empty Bin(创建空箱子)Show Next Graph(显示下一个图表)Clear Before Graphing(制图前清理)Delete Unused Nodes(删除未用节点)Multiply Divide(乘除)Luminance(亮度)Blender(混合器)Stencil(蜡纸)File(纵列)Remap Color(重贴图颜色)Hue(色调)Saturation(饱和度)Lambert(兰伯特)Gamma Correct(Gamma校正)Contrast(对比度)Clamp(夹具)Surface Luminance(曲面亮度)Rotate Frame(旋转帧)UV Ramp(UV色彩渐变)Color Utilit ies(颜色工具)Color Balance(色彩平衡)Saturation(饱和度)Hue(色调)Studio Clear Coat(工作室清理涂层)Distance Between(间距)Ramp Shader(色彩渐变明暗器)Normalized Brightness(标准化亮度)Brightness(亮度)Facing Angle(面向角度)物体空间(Object Space)相机空间(Camera Space)世界坐标空间(World Space)屏幕空间(Screen Space)Eccentricity(离心率)Specular Roll Off(镜面反射强度)Set To Face(设置到表面)Reflected Color(反射颜色)Env Chrome(环境铬合金)Decay Rate(衰减速率)Linear(直线型)Blobby Surface(滴状斑点曲面)Patricle Cloud(粒子云)Lifespan Mode(生命期方式)Volumetric(测定体积)用虹位图(Iris bitmap)Constant(恒量)Lifespan(生命期)fractal(不规则碎片)divisions(分割)Loaded(装载)Unit Conversion(单元转换)Plus Minus Average(加减平均)Reverse(反相)Array Mapper(矩阵贴图)Vector Product(矢量积)Specular Roll Off(高光强度)Old Min(旧的最小值)shadow_begin(阴影起始)Array Mapper(矩阵贴图)Add Dynamic Attributes(添加动态属性)Multi-Pass Rendering(多通道渲染)Status Line(状态行)Blobby Surface(斑点状表面)Ray Direction(射线方向)camera space(相机坐标空间)Cross Product(叉积)Vector Matrix Product(矢量矩阵积)World Matrix(世界坐标矩阵)Freeze Transformation(冻结变形控制)Normal Camera(法线相机)Flipped Normal(翻转法线)Triple Switch(三元转换)Quad Switch(四元转换)Double Switch(双元转换)Mask(蒙板)Glow Spread(雾伸延)Halo Spread(晕伸延)Render Partition(渲染分割)Light Linker(灯光链接器)Light Centric(灯光中央)Tapetum(脉络膜)原点框(origin box)为Chord Length(弦长)CV Curve Tool(可控曲线工具)Rebuild Curve(重建曲线)isoparm(等参线)快速而又随性(quick and dirty)Reverse Surface Direction(翻转曲面方向)Saw Tooth At Poles(电极锯齿)Planar Mapping(平面贴图)Projection Manipulator(投影操纵器)Cylindrical Mapping(圆柱贴图)Projection Center Rotate(投影中心旋转)Channel Box(通道框)marking menu(标识菜单)Polygons(多边形)Delete By Type(根据类型删除)Subdiv Surface(细分曲面)Refine SelectedComponents(精炼选中的元素)Attribute To Paint(绘画属性)Height Field(高度场)Maya Displacement Shader(位移阴影)Solid Fractal(实体分形)Initial Sample Rate(原始采样率)Extra Sample Rate(额外采样率)Bounding Box Scale(边界框尺寸)displacement(位移)胶片板(film back)Safe Title(字幕安全)Film Aspect Ratio(胶片纵横比)Lens Squeeze Ratio(透镜压缩比)和Overscan(过扫描)Film Roll Pivot(胶片卷轴)Frame Padding(画面填充)Shading(遮蔽)Edge Anti-Aliasing(边缘消除锯齿)Multi-Pixel Filtering(多像素滤镜)Motion Blur(运动模糊)Curve Tolerance(弯曲容限)Fill Style(填充类型)Optimize Scene Size Options(优化场景大小选项)Focus Region Scale(聚焦区域刻度)Blur By Frame(每帧模糊)Raytracing(光线追踪)voxels(体元)Recursion Depth(递归深度)Subdivision Power(细分能力)Primitives(分层基元)Leaf Primitives(分层基元)Damping(阻尼)Reflection Specularity(反射镜面)Surface Thickness(曲面厚度)Light Absorbance(光线吸收)Shadow Attenuation(阴影衰减)Chromatic Aberration(彩色像差)Refractions(折射)Sample Lock(封闭采样)Jitter(抖动)Exact(精确型)Static Object Offset(静止物体偏移)Motion Back Offset(运动背面偏移)Shutter(快门)Motion Blur By(运动模糊因子)Irradiance(发光)Caustic And Illumination(焦散线和照明)Emit Photons(发射光子)Reflectivity(反射率)Global Illum Photons(全局照明光子)Exponent(指数)Global Illum Accuracy(全局照明准确度)Global IllumRadius(全局照明范围)Global Illum Scale(全局照明缩放)Rebuild Photon Map(重建光子贴图)Direct Illumination Shadow Effects(直接光照阴影效果)Enable Map Visualizer(启用贴图观察器)Rendering Editors (渲染编辑器)mental ray Map Visualizer(mental ray贴图观察器)Normal Scale(法线缩放)Direction Scale(方向缩放)Point Size(点大小)Normal Scale(法线缩放)Gauss(高斯)Eccentricity(离心率)Refractive Index(折射指数)Shiny(光泽)Transp(透明度)Col(余辉系数)Ior(折射系数)Transmat(透明)Photonic Materials(光子材质)Photon Volumetric Materials(光子测定体积材质)Min Radius(最小半径)Max Radius(最大半径)Final Gather Scale(最终聚焦比例)Trace Reflection(反射追踪)Trace Refraction(折射追踪)Precompute Photon Lookup(光子查找预计算)Ambient Color(环境色)Irradiance Color(发光颜色)Min Sample Level(最小采样水平)Max Sample Level(最大采样水平)的Background Color(背景色)Raytracing(射线追踪)surface point曲面点cameras相机geometry几何体General Utilities(通用应用程序)Distance Between(间距)Particle Utilities(粒子工具)Normalized Brightness(标准化亮度)Surface Luminance(曲面亮度)世界坐标空间(World Space)Normal Camera(常规相机)specular highlight反射高光区disco ball镜球mountain texture山脉纹理preview 预览Presets(预设)Preview Quality(预览质量)Intermediate Quality(中间质量)Production Quality WithTransparency(具有透明度的产品质量)Mesh Gradient(网格渐变)Area Gradient(区域渐变)Edge Style(边缘类型)Outlines(轮廓线)Edge Weight Preset(边的宽度预设)第1章Particles[粒子]1.1 Particle Tool[粒子工具]1.2 Create Emitter[创建粒子发射器]1.3 Emit From Object[物体发射器]1.4 Per-Point Emission Rates[每点发射率]1.5 Make ColIide[制作碰撞]1.6 Particle ColIision Event Editor[粒子碰撞事件编辑器]1.7 Goal[目标]1.8 Instancer(Replacement)[粒子替代]1.9 Sprite Wizard[精灵向导]1.10 Connect to Time[连接Maya时间]第2章Fluid Effects[流体特效]2.1 Create 3D Container[创建3D容器]2.2 Create 2D Container[创建2D容器]2.3 Add/Edit Contents[添加或修改内容]2.3.1 Emitter[发射器]2.3.2 Emit from Object[从物体发射]2.3.3 Gradients[梯度]2.3.4 Paint Fluids Tool[绘制流体工具]2.3.5 With Curve[关联曲线]2.3.6 Initiaf States Options[初始化状态]2.4 Create 3D Container with Emitter[创建带发射器的3D流体容器] 2.5 Create 2D Container with Emitter[创建带发射器的2D流体容器] 2.6 Get Fluid Examples[获取流体例子]2.7 Get Ocean/Pond Examples[获取海洋或池塘例子]2.8 Ocean[海洋]2.8.1 Create Ocean[创建海洋]2.8.2 Add PrevieW Plane[添加预览平面]2.8.3 Create Wake[创建尾迹]2.8.4 Add Ocean Surface Locator[添加海洋表面定位器]2.8.5 Add Dynamic Locator[添加动力学定位器]2.8.6 Add Boat Locator[添加船舶定位器]2.8.7 Add Dynamic Buoy[添加动力学浮标]2.8.8 Float Selected Objects[漂浮所选物体]2.8.9 Make Boats[创建船舶]2.8.10 Make Motor Boats[创建机动船舶]2.9 Pond[池塘]2.9 1 Create Pond[创建池塘]2.9.2 Create Wake[创建尾迹]2.9.3 Add Pond Surface Locator[添加池塘表面定位器]2.9.4 Add Dynamic Locator[添加动力学定位器]2.9.5 Add Boat Locator[添加船舶定位器]2 9 6 Add Dynamic Buoy[添加动力学浮标]2 9 7 FIoat Selected Objects[漂浮所选物体]2 9.8 Make Boats[创建船舶]2 9 9 Make Motor Boats[创建机动船舶]2.10 Extend Fluid[扩展流体]2.11 Edit Fluid Resolution[编辑流体分辨率]2.12 Make Collide[创建碰撞]2.13 Make Motion Field[创建运动场]2.14 Set Initial State[设置初始状态]2.15 Clear Initial State[清除初始状态]2.16 Save State As[储存流体状态]2.17 Create Cache[创建缓存]2.18 Append to Cache[扩展缓存]2.19 Replace Cache Frame[重置缓存帧]2.20 Truncate Cache[裁剪缓存]2.21 Delete Cache[删除缓存]第3章Fields[场]3.1 Air[空气场]3.2 Drag[拖曳场]3.3 Gravity[重力场]3.4 Newton[牛顿场]3.5 Radial[放射场]3.6 Turbulence[扰乱场]3.7 UnIform[统一场]3.8 Vortex[旋涡场]3.9 Volume Axis[体积轴场]3.10 Use Selected as Source of Field[使用所选对象作为场源] 3.11 Affect Selected Object(S)[影响选择的物体]第4章Soft/Rigid Bodies[柔体和刚体]4.1 Create Active Rigid Body[创建主动刚体]4.2 Create Passive Rigid Body[创建被动刚体]4.3 Create Nail Constraint[创建钉子约束]4.4 Create Pin Constraint[创建销约束]4.5 Create Hinge Constraint[创建合页约束]4.6 Create Spring Constraint[创建弹簧约束]4.7 Create Barrier Constraint[创建障碍约束]4.8 Set Active Key[设定主动关键帧]4.9 Set Passive Key[设定被动关键帧]4.10 Break Rigid Body Connections[打断刚体连接]4.11 Create Soft Body[创建柔体]4.12 Create Springs[创建弹簧]4.13 Paint Soft Body Weights Tool[绘画柔体权重工具]第5章Effects[效果]5.1 Create Fire[创建火]5.2 Create Smoke[创建烟]5.3 Create Fi reworks[创建烟花]5.4 Create Lightning[创建闪电]5.5 Create Shatter[创建破碎]5.6 Create Curve Flow[创建曲线流动]5.7 Create Surface Flow[创建表面流动]5.8 Delete Surface Flow[删除表面流动]第6章Solvers[解算器]6.1 Initial State[初始状态]6.1.1 Set for Selected[为选定的动力学对象设定初始状态]6.1.2 Set for AIj Dynamic[为所有的动力学对象设定初始状态] 6.2 Rigid Body Solver Attributes[刚体解算器属性]6.3 Current Rigid Solver[当前刚体解算器]6.4 Create Rigid Body Solver[创建刚体解算器]6.5 Set Rigid Body Interpenetration[设定刚体穿透]6.6 Set Rigid Body Col l ision[设定刚体碰撞]6.7 Memory Caching[内存缓存]6.7.1 Enable[开启内存缓存]6.7.2 Disable[关闭内存缓存]6.7.3 Delete[删除内存缓存]6.8 Create Particle Disk Cache[创建粒子磁盘缓存]6.9 Edit Oversampl ing or Cache Settings[编辑采样值或缓设定] 6.10 interactive Playback[交互回放]第7章Hair[头发]7.1 Create Hair[创建头发]7.2 Scale Hair Tool[缩放头发工具]7.3 Paint Hair Follides[绘画发囊工具17.4 Paint Hair Textures[绘画头发贴图]7.4.1 Baldness[光秃]7.4.2 Hair Oolor[头发颜色]7.4.3 Specula Coiorf高光颜色]7.5 Get Hai r Example[得到头发事例文件]7.6 Display[显示]7.6.1 Current Position[当前位置]7.6.2 Start Position[初始位置]7.6.3 Rest Position[静止位置]7.6.4 Current and Start[当前和初始位置]7.6.5 Current and Rest[当前和静止位置]7.6.6 AII Curves[所有曲线]7.7 Set Start Position[设置起始位置]7.7.1 F rom Current[从当前位置]7.7.2 From Rest[从静止位置]7.8 Set Rest Position[设置静止位置]7.8.1 From Start[从起始位置]7.8.2 From Current[从当前位置]7.9 Modify Curves[修改曲线]7.9.1 Lock Length[锁定长度]7.9.2 Unlock Length[不锁定长度]7.9.3 Straighten[拉直]7.9.4 Smooth[平滑]7.9.5 Curl[卷曲]7.9.6 Bend[弯曲]7.9.7 Scale Curvature[缩放曲率]7.10 Create Constraint[创建约束]7.10.1.Rubber Band[橡皮筋约束]7.10.2 Transform[变换约束]7.10.3 Stick[发夹约束]7.10.4 Hair to Hair[头发到头发约束]7.10.5 Hair Bunch[发束约束]7.10.6 ColIide Sphe re[碰撞球]7.10.7 ColIide Cube[碰撞立方体]7.11 Convert Selection[转换选集]7.11.1 To Follicles[切换到发囊]7.11.2 To Start Curves[切换到初始曲线]7.11.3 To Rest Curves[切换到静止曲线]7 11.4 To Current Positions[切换到当前位置]7.11.5 To Hair Systems[切换到头发系统]7.11.6 To Hair Constraints[切换到头发约束]7.11.7 To Start Curve End CVs[切换到初始曲线的末端CVs]7.11.8 To Rest Curve End CVs[切换到静止曲线的末端CVs]7.11.9 To Start and Rest End CVs[切换到初始和静止曲线的末端CVs] 7.12 Assign Hair System[指定头发系统]7 13 Make Selected Curves Dynamic[使所选曲线成为动力学曲线] 7.14 Make Collide[建立碰撞]7.15 Assign Hair Constraint[分配头发约束]7.16 Assign Paint Effects Brush to Hair[指定画笔特效到头发]7.17 Transplant Hai r[移植头发]7.18 Create Cache[仓I建缓存]7.19 Append to Cache[附加缓存]7.20 Truncate Cache[裁剪缓存]7.21 Deleze Cache[删除缓存]7.22 Delete Entire Hair System[删除整个头发系统]。
光电英语词汇汇总
光电英语词汇汇总photographic reconnaissance 照相侦察photographic recorder 摄影记录器,录相器photographic refractor 天体折射照相仪photographic reproduction 照相复制法photographic sensitometer 感光度测定仪photographic snesitivity 感光度photographic sound recorder 光录声机photographic standard irradiance 照相标准辐照度photographic tansmission density 照相透光密度photographic zenith tube 照光天顶管photography 照相术,摄影术photogravure 照相凹板印刷photogroduct 光化产品photogun 光电子枪photohalide 感光卤化物photohead 光电传感头photoheliograph 太阳照相机photoheliography 太阳照相术photohole 光穴photohyalography 光照蚀刻术photoimpact (1)光冲量(2)光控脉冲photoinactivation 光纯化作用photoinduced 光致的,光感生的photoinduced strain 光致应变photoinduction 光诱导,光感生photointaglio 照相板,影印版photointerpreter 相片判读装置photoionization 光致电离photoionization detector 光电离检测器photoionization threshold 光致电离阈photoisomer 光致同分异体photoisomerisom 光致同分异构photojunction cell 光电二极管photojunction diode 光电二极管photoklystron 光电速调管photolabile 对光不稳的photolayer 光敏层photolesn chromatism 摄影透镜色差photoline 光线photolithgraphic 光刻法的photolithography 光蚀刻微影; 光刻法; 平印照相制板photolocking 光锁定photology 光学photoluminescence 光致发光photoluminescence efficiency curve 光致发光效率曲线photolysis 光解作用photolyte 光解质photolytic 光解的photom 光度学photomacrogaph 宏观照片photomagnetic 光磁的photomagnetic effect 光磁效应photomagnetoelectric 光磁电的photomagnetoelectric effect 光磁电效应photomap 空中摄影地图photomask 光掩模photomask materials 光罩材料photomation 自体摄印相机photomatrices 光矩阵photomechanical 光学机械的photometallic etching 光金属蚀刻photometallurgical microscope 金相摄影显微镜photometeor 发光陨星photometer 光度计photometer bench 光度计座photometer head 光度计头photometers 光度计photometric 光度的photometric brightness 光亮度photometric brightness scale 光亮度标photometric calibration 光度校正photometric calibration data files 光度校准数据文件photometric computer 测光计算机photometric head 光度头photometric integrating sphere 光度积分球photometric method 光度测定法photometric paradox 光度佯谬photometric parallax 光度视差photometric period 光度周期photometric quality 光度质量photometric quantity 光度值,光度量photometric receiver 光度计photometric relationship 光度关系photometric repartition 光度分布photometric scale 光度标photometric standard 光度标准photometric standard lamp 光度标准灯photometric sterance 光辐通量photometric term 光度学术photometric test 光度检查photometric test plate 光度试验板photometric transfer function 光度传逊函数photometric units 光度学单位photometric wedge 测光楔photometry 光度学,光度测量术photomicrograph (1)显微照置(2)显微照片photomicrographic apparatus 显微照相装置photomicrographic tungsten arc lamp 显微照相钨弧光灯photomicrography 显微照相术photomicrometer 显微光度计photomicroscope 照相显微镜photomixer 光混频器photomixer diode 光混频二极管photomixing 光混频photomixing device 光源频器photomixing technique 光混频技术photomodulator 光调制器photomontage (1)光片剪辑(2)合成照片photomosaic 感光镶嵌幕photomotion 光激活动photomultiplier 光电倍增管photomultipliers 光电子增倍管(PMT)photomuon 光μ介子photon 光子photon absorption 光子吸收photon activated switch 光子起动开关photon amplification 光子放大photon annihilation 光子湮没photon avalanche 光子雪崩photon beam 光子束photon bombardment 光子轰系photon bunching 光子聚束photon capture 光子俘获photon counter 光子计数器photon counting spectrophotometer 光子计数分度计photon density 光子密度photon detector 光子探测器photon drag detector 光子牵引探测器photon drag photodetector 光子牵引光探测器photon effect 光子效应photon emission 光子发射photon excited atom 光子激发原子photon exitance 光子出photon fluctuation 光子起伏,光子波动photon flux 光子通量photon intensity 光子强度photon irradiance 光子辐射度photon liberation 光子逸出photon lifetime 光子寿命photon limited sensitivity 光子限灵敏度photon nosie 光子噪声photon radiance 光子辐射强度,光子辐射率photon statistics 光子统计学,光子流统计分布photon steradiance 光子辐射强度photon stream 光子流photon structure 光子结构photon-generated carrier 光生载流子photon-induced 光子感生的photon-induxed action 光子感生作用photonegative effect 负光电效应photonephelometer 光电浊度计photoneutron 光激中子photoneutron emission 光激中子发射photonic band structures 光子能带结构photonic band-gap (PBG) system 光能隙系统photonic bandgap 光子能隙photonic crystal 光子晶体photonic crystal fiber 光子晶体光纤photonic crystals 光子晶体Photonics 光电photonoise limit 光子噪声限photontransition 光子跃迁photonuclear disintegration 光致核蜕变photonuclear excitation 光核激发photooxidation 感光氧化用,光致氧化作用photooxygenation 光致氧化photooxygenation actinometer 光致氧化感光计photopeak 光巅,光峰photopen recorder 光笔记录器photoperiod 光周期photoperspectograph 摄影透视仪photophase 光相位photophobia 畏光症photophone 光电话,传真电话photophoresis 光致漂移photophysics 光子物理学photopia 光适应photopic eye 适光眼photopic range 适光范围photopic vison 亮视觉,白画视觉photoplane 摄影飞机photoplastic effect 光塑性效雁photoplastic material 光塑材料photoplastic recording 感光塑料记录photoplate 照相底片photopolymer 光聚合物photopolymer holography 光聚合物全息术photopolymerization 光聚作用photopositive 照相正片photopredissociation 光致预离解photoprigment 感光色素photoprint 影印,照页复制photoprocess 光学处理,光学加工photoproduction 光致作用,光生photoproducton cross-section 光致作用截面photoptometer 光敏计,光觉计photoptometry 辨光测验术photoradar 光雷达photoradiogram 光电传真电报photoransmitter 照片传真发器photoreaction 光致反应photoreader 光电读出器photoreading 光读婺photoreceiver 照片传真接器,光接收器photoreceptor 光感受器photorecombination laser 光复合激光器photoreconnaissance 摄影侦察photoreconversion 光致再转换photorecorder 摄影记录器,自动照明记录器photorectifier 光电检波器photoreduce 照相缩小photoreduction (1)光致还原(2)照相缩版photorefraction 光折射photorefractive 光致折变的photorefractive effect 光折射效应photorelay 光继电器photorepeater 复印机photoresist optics exposure 光电导曝光photoresistance 光敏电photoresistor 光敏电阻photoresistor-cell relay 光敏元件继电器photoresponse 光响应photoresponsive retina 光响应视网膜photoresponsive tube 光响应管photorproton 光质子photoscanning 光扫描photoscope 透视镜photosensing units 光感测元件photosensitiser 感光剂,光敏剂photosensitive 光感的,感光的photosensitive area 光敏区,光敏面积photosensitive device 光敏器件photosensitive film 光敏膜photosensitive glass 光敏玻璃photosensitive layer 光敏层photosensitive material 感光材料photosensitive medium 光敏媒质photosensitiveness 光敏性,光敏度photosensitivity 光敏性,感光性,感光灵敏度photosensitization 光敏作用photosensitizer 光敏剂photosensor 光敏器件photoseparation 光分离photoset 照相版排photosignal 光信号photosource 光源photosphere 光球层photospot 聚光photostability 耐光性photostable 不感光的,耐光的photostar 发光星体photosterograph 立体测图仪photostimulaton 光剌激photostudio (1)照相馆(2)摄影棚photosurface 光敏面photosurface spectral response 光敏面光谱响应photoswitch 光开关photosynthesis 光合作用phototaxis 趋光性phototelegram 传真电报phototelegraph 传真电报phototelegraphy 传真电报术phototelephone 传真电报机phototelephony 传真电话术phototelescope 照相望远镜phototherapeutics 光线治疗学phototherapy 光线疗法photothermionic image converter 光热离子变相管phototimer (1)曝光计(2)摄影计时器(3)延时光控继电器phototiming 光同调步phototransistor 光电晶体管,光敏三极管phototransistors 光电晶体phototransmutation 感光蜕变phototriode 光电三极phototroller 光控电管phototron 矩阵光电管phototrop 光色互变phototropic 向光的phototropic vision 摄影仪phototropism (1)趋光性,向光性(2)光色互变现象phototube 光电管phototubes 光电管phototype 珂罗版phototypesetter 照相排字机photounit 光电件photovalue 光阀photovaoltaic 光生伏打的photovisual objective 拟视照相物镜photovisula achromatism 光化视觉消色差性photovolt desitometer 光电密度计photovoltage 光电压photovoltaic 光生伏打photovoltaic cell 光生伏打电池photovoltaic converter 光伏变换器,光电能量变换器photovoltaic effect 光生伏打效应photovoltaic infrared detector 光伏红外探测器photox cell 氧化亚铜光电元件photoxide 光氧化物photozincograph 照相锌版photsyntometer 光合计phrolysis 高温分解,热解phromagnetic 热磁的phromagnetic detection 热磁探测phse-modulated signals 调相信号phse-modulated waves 调相波phthalocyanin 屻花悄phtoochromatic filter 光致变色滤光器physi-optics 物理光学physical absorption 物理吸附Physical chemistry 物理化学physical constraint 物理约束physical development 物理显影physical entropy 物理熵physical interpretation 物理解释physical optics 物理光学physical photometer 物理光度计physical photometry 物理光度测量学physical quantity 物理量physical thickness 物理厚度physics 物理学physiological 生理的physiological blur 生理模糊斑physiological model 生理模型physiological optics 生理光学physiological photometer 生理光度计physiology 生理学physioptial 物理光学的pic (1)图片,照片(2)图画,图像pic-up device 摄像装置pick-off diode 截止二极管pick-off gear 可互换齿轮pick-up (1)拾波,拾声(2)拾波器(3)拾声器(4)传感器(5)电视摄像管pick-up camera 摄像机pick-up head lenses 光碟机读取头透镜pick-up system 摄像系械pick-up tube 摄像管pickoff (1)传感器,探测器(2)截止(3)拾取pickoff couple 截止耦合器pickoff unit (1)接收器(2)截止器piclear unit 图像清除器picling (1)酸浸(2)浸渍picnometer (1)比重瓶(2)比色计pico 皮picosecond (ps)微微秒picosecond light pulse 微微秒光脉冲picosecond pulse 微微秒脉pictorial display 图像显示pictorial holography 图像全息术pictorial infrared photography 红外图像照相术pictorial view 示图,插图picture (1)画,图像(2)图片,照片picture bit rate 图像位速率picture element 像素,像元picture field 图像场picture frequency 图像频率picture image 图像picture jump 图像跳动picture pattern 图像,图样picture processing 图像处理picture quantizer 图像数字转换器picture retention 图像残留picture signal 图像信号picture signal amplitude 图像信号振幅picture synchronization 图像同步picture taking wavelength 摄影波长picture transmission camera system 图像传输摄影机系统picturephone 电视电甘picturephone set 电视电话机piecewise interferometric generation 分段傅里叶谱pieometer 压力计,压强计piercing 分段干涉量度振荡piezo 钻孔piezo-luminescence 压难发光piezo-optical coefficient 压光系数piezo-optical property 压光性质piezocrystal 压,压力piezoelectric 压电晶体piezoelectric ceramic 压电的piezoelectric constant 压电陶瓷piezoelectric crystal 压电常数piezoelectric effect 压电晶体piezoelectric laser modulation 压电现像,压电学piezoelectric light modulator 压电激光调制piezoelectric matrix 压电光调制器piezoelectric positioning equipment 压电定位设备piezoelectric quartz crystal 压电矩阵piezoelectric resonator 压电石英晶体piezoelectric tensor 压电共振器piezoelectric transducer 压电换能器piezoelectric transformer 压电变压器piezoelectric vibration 压电振动piezoelectricity 压电效应piezoid 压电石英piezometric 量压的,测压的piezometry 压力测定piezoquartz 压电石英piezoresistance 压敏电阻piezoresistive 压缩电阻的piezoresistor 压敏电阻器pig iron 生铁pigment (1)色素(2)颜料pigment epithelium 色素层pile-of-plates polarizer 玻片堆偏振器pile-up (1)堆积效应(2)堆集,聚集,积累pillar 柱,墩pillbox antenna 抛物柱面天线pillbox distribution 抛物柱面分布pillow (1)枕块(2)轴枕pilot ballon theodolite 气球测风经纬仪pilot lamp 指示灯pilot light 指示灯pilot wave 领波pimpling 凸起pin (1)别针(2)销钉(3)插头(4)管脚pin clamp 插销口pin photodiode 针状光电二极管pin photodiode modules for communication 通信用PIN光二极体模组pin photodiodes for communication 通信用PIN光二极体pin-camera 针孔照相机pin-electrode 针状电极pin-electrode discharge technique 针极放电技术pinacoid 轴面pinch 箍缩pinch effect 箍缩效应pinch laser 箍缩激光器pinch plasma 箍缩等离子体pinch pump 箍缩泵pinch-discharged-pumped laser 箍缩收电抽运激光器pinch-off effect 箍断效应pinch-off voltage 箍断电压pinch-preheated 收缩预热的pincushion aberration 枕形像差pincushion distortion 枕形失真pincushion-shaped image 枕形像pinhole 针孔,小孔pinhole camera 针孔照相机pinhole filter 针孔滤波器pinhole filters 针孔滤光镜pinhole image 针孔像pinhole imaging 针孔成像pinhole photography 针孔照相术pinhole system 针孔系统pinholes 针孔pinion 小齿轮,副齿轮pinion shaft 齿轮轴pink 淡红色的,纷红色的pinning (1)阻塞(2)闭合pinor 自旋量pinpoint (1)针尖(2)空中精确摄影(3)航空照片(4)精确定位pinpoint accuracy 高精确度pinpoint technique 精密技术pinpointed focus 定位焦点pint 品脱pip (1)针头(2)反射点(3)针头信号(4)广播报时信号pipe (1)管,导管(2)管状物pipe cross 十字接头,交接头pipeline (1)管道(2)输送管piping (1)管系(2)导管piquant 图佣数字转换器Pirani gage 皮剌尼计piston 活塞pit 凹痕,麻点pitch (1)螺距,齿节间距(2)沥青(3)松鲁(4)音调pitch adhesive 沥青黏结剂pitch angle 俯仰角pitch control (1)色调控制(2)音调控制pitch error (1)螺距误差(2)周节误差pitch gage (1)螺距规(2)周节仪pitch lap 沥青抛光盘pitch line (1)中心线(2)分度线pitch polishing tol 沥青抛光模pitch viscosity 沥青黏度pitting (1)凹痕,麻点(2)锈斑pivot (1)枢纽(2)支轴(3)支点pivot bearing 枢轴承pivot lesn apparatus 旋转透镜装罝pivot pad 枢轴垫,心轴垫pivot screw 枢轴螺钉pivot-point 支点pivoted axle 转动轴,摆动轴pixel 像素,像元placement 方位,部位,位置Placideo's disk 浦拉西多盘,角膜镜plain bearing 普通轴承,滑体轴承plain view drawing 平面图plan (1)计划(2)平面图,设计图plan of site 总布置图plan view 平面图,俯视图planar access couple 平面存取耦合器planar array 平面阵列planar dielectric waveguid 平面介质波导planar epitaxial phototransistor 平面外延光电晶体管planar hologram 平面全息图planar iris 平面可变光阑Planar lens 普拉纳镜头planar mirror 平面反射镜planar mosaic array 平面镶嵌阵列planar optical waveguide 平面光波导planar phottransistor 平面光电晶管planar rotor 平面转动片planar stripe DH laser 平面条状DH激光器planar waveguide-type 平面波导型planar-diffused transistor 平面扩散晶体管Planck function 普朗克函Planck's blackbody law 普朗克黑体定定律Planck's constant 普朗克常数Planck's holhrum radiaton 普朗克空腔辐射Planck's law 普朗克定徭Planck's oscillator 普朗克振子Planck's radiation law 普朗克辐射定且Planck's spectral radiation formula 普朗克光谱辐射公式Planckian locus 普朗克轨迹Planckian radiator 普朗克辐射体plane (1)平面(2)程度,水平(3)飞机(4)平面的plane angle 平面角plane cam 平面凸轮plane cocular 平场目镜plane goniometer 平面测向计plane grating 平面光栅plane hologram 平面全息图plane interference 平面干涉plane mirror 平面反小镜plane monchromator 平面色器plane of field lens 场镜面plane of incidence 入射面plane of oscillation 振动面plane of polarization 偏振面plane of projection 投影面plane of reflection 反射面plane of refraction 折射面plane of sharpest focus 最锐聚焦面plane of symmetry 对面plane of vibration 振动面plane optical flat 平面光学平晶plane polariscope 平面偏振镜plane polarization wave 面振波plane polarized (1)面振的(2)平面极化的plane polarized laser beam 平面偏振激光束plane polarized wave 面振波plane polarizedl ight 面振光plane position indicator (PPI)平面位置指示器,平面示伅器plane resonator 平面型共振器plane rod end 棒端面plane section 剖面plane shape irdome 平面型红外整流罩plane shutter 平面快门plane spatial filter 平面空间滤波器plane surface 平面plane surveying 平面测量plane wave 平面波plane wave front 平面波前plane-grating spectrograph 平面光栅摄谱仪plane-paralledl cavity 平行平面共振腔plane-parallel mirror 平行平面反射镜plane-parallel resonator 平行平面共振器plane-table alidade 平板照准仪plane-table survey 平板测planeness 平度planet 行星planetarium (1)天文馆(2)天象仪(3)太阳系仪planetarium projector 天象投影仪planetary (1)行星的(2)行星齿轮的planetary mission 行星齿轮变速管planetary pinion 行星小齿轮planetary radiation 行星辐射planetray microfilmer 文献资料翻拍机planetray reducer 行星减速齿轮planigraphy 层析X射线照相法planimegraph 面积比例规,缩图器planimeter (1)面积仪(2)求积仪planimetry 测面学,平面几何planitron 平面数字管planizer 平面授描头,平面发生器plank 板,厚板plano-aspheric corrector 平板非球面校正镜「施密特校正镜plano-aspheric transmitting corrector 平面非球面透射校正镜plano-concave lens 平凹透镜plano-convcave 平凹的plano-convex 平凸plano-convex lens 平凸透镜planometer 测平面仪,平面规planopaallel plate 平行平面板,平行平晶planoscope eyepiece 平场目刽planox 平面氧化的plant (1)成套设备(2)站(3)工厂,车间plariser 偏振器,偏振片plasma 等离子体,等离子区plasma -speetrometer 等离子光谱仪plasma arc pumping 等离子体电弧抽运plasma channel 等离子体通道plasma column 等离子体柱plasma corona 离子体电晕plasma CVD equipment 电浆CVD设备plasma density profile 等离子密度分布plasma dignostics 等离子体诊断Plasma Display Panel (PDP)电浆显示器plasma display panels (PDP)电浆显示器plasma ejection 等离子体抛射Plasma Enhance Chemical Vapor Deposition (PECVD)电浆增强式化学气相沉积法plasma exciatiaon 等离子体激发plasma focus 等离子焦点plasma frequency 等离子体频率plasma generation with laser 激光产生等离子体plasma generator 等离子体发生器plasma laser 等离子体激光器plasma light source 等离子体光源plasma oscillation 等离子体振荡plasma parameter 等离子体参数plasma pinch pump 等离子体箍缩泵plasma polymerization 等离子体聚合plasma polymerized coating 等离子体聚合涂层plasma polymerized thin film 等离子体合薄膜plasma radiation 等离子体辐射plasma reflectivity 等离子体反射率plasma slab 等离子层plasma spatial filter 等离子体空间滤光片plasma sphere 等离子层plasma torch 等离子火焰plasma tube 等离子体管plasma wave 等离子体波plasma-overlap laser 等离子体并行激光器plasma-pump laser 等离子体泵激光器plasma-sheet CO2 laser 等离子体薄板CO2激光器plasmat-type copying lens 等离子型仿徵透镜plasmatron 等离子管,等离子流发生器plasmoid 等离子体粒团plasmon 等离子体激元plaster (1)熟石膏(2)硬膏plaster block 石膏镜盘plaster of Paris 熟石膏,烧石膏plastic (1)塑料的(2)塑性的,范性的(3)塑料plastic aspheric lenes 塑胶非球面透镜plastic cement 塑料胶plastic clad fiber 塑料色层纤维plastic deformation 塑或变形plastic dye laser 塑料染料激光器plastic ferrules 塑胶箍(套管)plastic fibre optics 塑料纤维光学plastic film 塑料薄膜plastic filters 塑胶滤光镜plastic focusing fibre 塑料聚焦纤维plastic laser 塑料激光器plastic lens system 塑料透镜系统plastic material (1)塑料(2)可塑材料,塑性材料plastic optical fiber 塑料光学纤维plastic optics 塑料光学纤维plastic polishing 成型抛光plastic Q switch 塑料Q开关plastic recoding medium 塑性记录媒质plastic shim material 塑性垫片材料plastic spectacle lens 塑料眼镜片plastic spheric lenes 塑胶球面透镜plastic-base mirror 塑料底座镜plasticien 代用黏土plasticity (1)可塑性,范性(2)黏性plasticization 增塑plasticizer (1)增塑剂(2)增韧剂plastics 塑料,塑胶plasto-elasticity 弹塑性力学plastyle lens 塑玻透镜plate (1)盘(2)片(3)薄反(4)板极(5)底片plate camera 干板照相机plate glass 玻璃板plate holder 干板照拿plate let laser 小片激光器plate level 盘式水准器plate level vial 盘水准管plate library 底片库plate object 板状plate potential 板极电势,板极电位plate theory 薄板理论plateau 背脊platelet 薄片,小片platform 平台,站台plating 镀,电镀plating bath 镀金槽,电镀槽platinotron 泊管platinum (Pt)铂platinum black 铂黑platinum bolometer 铂测辐射热计platinum crucible 铂金坩埚platinum mirror coating 铂镜面镀层platinum oxide 氧化铂play (1)隙,隙缝(2)闪晃play-off beam 回扫射束playback 播收pleochroic 多向色的pleochroic halo 多向色晕圈pleochroism 多向色性,多色性Pleon lens 普来昂镜头plexiform layers 胶木板Plexiglass 普莱有机玻璃Plexiglass diffuser 普莱有机玻璃漫射体pliability 可挠性pliotron (1)功率三极管(2)空气过滤器pllane glass 平面玻璃,平板玻璃pllarising microscope in reflected light 反射光偏振微镜Plochere color system 普罗彻尔彩色系统Ploessl eyepiece 普罗爱瑟目镜,对称性目镜plot (1)标甥(2)标甥图plot diagram 点列图plotomat 自动绘图机plotter 标绘器,绘迹器plotting instrument 绘图仪器plotting objective 纠正仪物镜plotting tablet 标图板plug 插头,插塞plug gage 塞规plug screw gauge 螺纹塞规plug-in (1)捏入式的,组合式的(2)捏座plug-in unit 插件plugs 插头plumb 铅锤,垂直plumb aligner 铅锤对准器plumb level 水准仪,水平仪plumb line 铅垂线,重垂线plumb line deviation 垂线偏差plumbago 石墨,炭精plumbico camera tube 氧化铅光电导摄管plumbicon 氧化铅摄像管plumbing mirror 垂准镜plumbum (Pb)铅plummet (1)铅垂球(2)铅垂线plunger (1)柱塞(2)短路器plurality (1)多元(2)多数(3)复数plus (1)正号(2)加号(3)正数(4)正的(5)加plus lens 正透镜plus power spherical lens 正屈光度球透镜plus sphero-cylinder 正球柱透镜Plustar lens 普鲁斯特拉物镜plutonium (Pu)鐶PLZT display device PLZT显示装置PLZT wafers PLZT晶圆,钛酸锆酸铅晶圆PM-LCD Passive Matrix LCD被动式矩阵液晶PME-effect 光磁电效应pmmersion oil 浸油pneumatic 空气的,气动的,气力的,风力的pneumatic detector 气动检测器pneumatics 气体力学Pockels' cell 泡克耳斯拿Pockels' cell apodizer 泡克耳斯切趾器Pockels' device 泡克耳斯器件Pockels' effect 泡克耳斯效应Pockels' effect cell 泡克耳斯效应拿Pockels' readout optical nidulator (PROM)泡克耳斯读出光学调制器Pockels' shutter 泡克耳斯光闸pocket (1)袋,袋状物(2)袖珍的pocket camera 袖珍相机pocket compass 袖珍罗盘pocket microscope 袖珍显微镜pocket sextant 袖珍六分义Pohl interferometer 坡耳干涉仪Poincare sphere 鲍英卡勒球point (1)点(2)小数点(3)尖端point angle 顶角point brilliance 点耀度point caracteristic funtion 特微函数point defect 点缺陷point function 点函point object 点物point of fixation 注视点point of fusion 融汇点point of incidence 入射点point of inflexion 拐点,变曲点point of intersection 交点point of reference 参考点,基准点point particle 质点point projector microscope 点投射显微镜point sampling 点取样法point sighted 瞄准点point source 点光源point source lamp 点光源灯point source radiator 点源辐射器point spectrum 点谱,离散谱point spread function 点扩散函数point symetry 点对point symmetry groups 点对群point-by-point reproduction of the object 逐点再现物体point-by-point scanning 逐点扫描point-by-point storage 逐位存储point-contact photodiode 触光电二极管point-foussed 聚於一点的point-source hologram 点光源全息图point-to-point image 成点pointed 尖的pointer (1)指针(2)指示器pointing (1)削尖,弄尖(2)瞄准pointing accuracy 瞄准精度pointing error 瞄准误差pointing technique 瞄准技术pointolite 点光产pointolite lamp 点光源灯points of the compass 罗盘上方位罗Poisson diffraction 泊松衍射Poisson distribution 泊松分布Poisson's ratio 泊松比polanret microscope 变偏光相差显微镜polar angle 极角polar axis 极轴polar axis shaft 极坐标轴polar bond 极性polar compound 极性混合物polar corrdinates 极性标polar crystal 极性晶体polar diagram 极性坐标图polar distribution 极角分布polar light 极光polar molecule 有极分子,极性分子polar mosaic 极性镶嵌polar plot 极线图polar symmetry axis 极性对轴polar telescope 北极管polar vector 极矢polarimeter 偏振光计,偏振光镜polarimeters 偏振计polarimetric 测定偏振的polarimetric element 测振元件polarimetry 旋光测定法,测偏振术polarisation interferometer 偏振干涉仪polariscope 旋光计,偏振镜polariscopes 偏振光镜polarising metallurgical microscope 偏振金相显微镜polarising microscope in transmitted light 镜射光偏振显微镜polariton 电磁激子polariton scattering spectrum 电磁激子散射谱polarity 极性polarity detector 信号极生探测器polarizability (1)极化性(2)极化率polarizability ellipsoid 极化性椭球体polarizable 可极化polarizaiton of laser output 激光输出偏振度polarization (1)偏振(2)标定polarization analyzer 检偏器,检偏镜polarization degeneracy 极化简并度polarization effect 偏振效应polarization ellipse 偏振椭圆polarization error 极化误仪,偏振误差polarization factor 偏振因数polarization filter 偏振滤光器,偏振镜polarization hologram 偏振全息照片polarization interference microscope 偏光干涉显微镜polarization interferometer 偏振干涉仪polarization junction laser 偏振结型激光器polarization microscope 偏光显微镜polarization modulation 偏振调制polarization of light 光偏振polarization of sky light 天光偏裁polarization optics 偏振光学polarization photmeter 偏振光度计polarization reversal 极化又射polarization rotation (1)偏振旋转(2)极化旋转polarization selectivity 偏振选择性polarization tensor 极化张量polarization vector 偏振矢量polarization-rectifier obejctive 偏振整流物镜polarization-resolving optics 偏振光学分离器polarization-rotated reflection 偏振转反射polarizational labelling 偏振标定polarizationally isotropic cavity 偏振各向同性腔polarized headlight 偏振前车灯polarized light 偏振光polarized light microscope 偏振光显微镜polarized light modulation 偏振光调制polarized line 振线polarized radiation 极性辐射polarized specrophotometer 偏振分光光度计polarized wave 偏振波polarized-light optical system 振光光学系统polarizer 偏光板polarizer-Kerr-cell combination 偏振镜-克尔盒组合polarizer/ phase shift layer 偏光板/相位差板polarizers 偏光镜polarizign coil 极化线圈polarizing 起偏振polarizing angle 起偏抚角polarizing color filter 偏振彩色滤光片polarizing electrode 极化电极polarizing eyepiece 起偏振目镜polarizing filter 偏振滤光,起偏滤光polarizing filters 偏光滤光镜polarizing glass 偏光镜,偏振目镜polarizing itnerferometer 偏振干涉仪polarizing microscope 偏光显微镜polarizing microscopes 偏光显微镜polarizing mirror 偏光反射镜polarizing optics 偏振光学装置polarizing plate 起偏振光片polarizing prism 偏振棱镜,起偏棱镜polarizing shearing itnerferometer 偏振剪切干涉仪polarizing spectrohotmeter 偏振分光光度计polarizing waveplate 偏光波板polarizse (1)偏振(2)极化polarogram 极谱polarographci wave 极谱波polarographic analysis 极谱分析法polarographic method 极谱法polarography 极谱法polaroid (1)偏振片(2)即显胶片Polaroid camera 波拉一步照相机polaroid film 即显胶片polaroid filter 人造偏振片滤光器polaroid foil 人造偏振箱polaroid glass 偏光镜,偏振目镜polaroid polarizer 偏振片,偏振镜polaroid sheet 偏振片polaroid vectorgarph (1)偏振立体镜(2)立体电影polaron 极化子polarotactic navigation 偏振光导航polarotaxis 趋偏光性polaxis 极化轴pole (1)极(2)电极(3)磁极(4)极点(5)棒,杆pole figure 极像图pole gap 极隙pole piece 极片pole strenght 磁极强度pole-change 极变换polgrogaph 极谱仪poling 成极,单畴化polish (1)抛光(2)抛光剂polisher 抛光机polishing block 抛光盘polishing compound 抛光剂polishing compounds 研磨化合物polishing damage 抛光损伤polishing machine 抛光机polishing material 抛光材料polishing pads and cloth 研磨衬垫及布polishing plastic 抛光塑料polishing powder 抛光粉polishing rouge 抛光红粉polishing tool 抛光模politure 抛光polka-dot method 圆点光栅法pollutant 污染物pollution 污染pollution control 污染控制poloidal field 角向场poloniqum (Po)钋polsihed-barrl-rod 抛光圆棒polsihing felt 抛光毡子polsihing lap 抛光盘poly-lens objectie 多透镜物镜poly-silicon TFT LCD 多晶矽TFT LCD 液晶面板polyalkyl methacrylate 聚甲基丙烯酸烷基酯polyallyl metacylate 聚甲基丙烯酸烯丙酯polyamide 聚酸胺polyatomic 多原子polyatomic chemical laser 多原子激光器polyatomic system 多原子系统polycarbonate 聚碳酸酯polychormism 多组元polychroism 多色polychromatic 多色的polychromatic field 多色场polychromatic light 多色光,多色灯polychromatic radiation 多色辐射polychromatic radiator 多色辐射器polychromatic source 多色光源polychromatic wave 多色波polychromatism 多色polychromator 多色仪polychrome 多色性polycomponent 多晶体polycrystal 多晶的polycrystalline 多晶区polycrystalline area 多晶硫族化物polycrystalline chalcogenide 多晶纤维光学波导polycrystalline fibre optical waveguide 多晶锭块polycrystalline ingot 多晶激光器polycrystalline lawer 多晶物质polycrystalline material 多晶体散射polycrystalline scattering 多晶半导体polycrystalline semiconductor 聚甲基丙烯酸环已酯polycyclohexyl methacrylate 聚邻本二甲酸二烯丙酯polydiallyl itaconate 聚衣康酸二甲酯polydisperse 多色散polydisperse aqueous aerosol 多色散水气悬体polydisperse particulate system 多色散粒子系统polyemid 配向膜polyester 聚酯polyester fiber 聚酯纤维polyester-styrene 聚酯本乙烯polyethylen 聚乙烯polyethylene dimethacrylate 聚乙烯二异丁烯polyfoam 泡洙塑料polyglas 本乙烯塑料polygon 多形,多角形polygonal 多边形的,多角形的polygonal mirror 多面镜,光学夕面体polygonal mirrors 多面镜polygonal prism 多边形棱镜polyhedral 多面的polyhedron 多面体polyisobutylene 聚异乙烯polymer 聚合物Polymer processing 高分子加工Polymer science 高分子材料polymeric thin film 聚合薄膜polymerization 聚合作用polymerization transition 聚合变化polymerized 聚合的polymerized diacthylene 聚合丁二炔polymethacrylate 聚甲基丙烯酸酯polymethacrylic acid 聚甲基丙烯酸polymethine 聚甲炔polymethine dye laser 聚甲炔染料激光器polymethine Q switch 聚甲炔Q开关polymethyl methacrylate 聚甲基Polymethylmethacrylate diagnostic contact lens 诊疗用PMMA角膜接触镜片PMMA diagnostic contact lens 诊疗用PMMA角膜接触镜片polymorphism 聚甲基丙炔酸甲酯polynomial 同质多晶型polyphase 多项式多相polyphase current 多相电流polyplanar 多晶平面polypropylene 聚丙烯polyriboadenylic acid 多核糖腺甘酸polysilicon 多晶硅polystyrene 聚本孔烯polystyrene diffusion broadening 聚本乙烯扩展宽polytetrafluoethane 聚四氟甲烷polytetrafluorethylene (PTFE)聚四氟乙烯POLYTHENE FILM 聚乙烯polytroic 多方的polytype 多型体polyurethane 聚氨基甲酸醴polyvalence 多价polyvinyl 聚孔烯polyvinyl alcohol 聚孔烯醇polyvinyl chloride (PVC)聚氯孔烯polyvinyl chloride film 聚氯孔烯软片polyvinyl naphthalene 聚乙烯基本polyvinyl-fluoride 聚氟乙烯polyvinylcyclohexene dioxide 聚孔烯环已烯二氧化物polyvinylidene fluoride 聚偏氟乙烯ponderability 可称性,有质性pony axle 空转轴,导轴poop 尖锐脉冲poor focus 不银聚焦poor light condition 微光条件popular inversion area 粒子数反转区populated 粒子数增加的population (1)布居(2)粒子数population density 粒子数密度population difference 布居差population distribution 粒子数分布population hang-up 粒子数悬布population inversion 粒子数反转population mean 总体平均值population of level 能级个数,能级填满数population of parameter 参数组population ratio 粒子数比population risetime 粒子数增长时间population threshold 粒子数阈值porcelain 瓷器porcelain enamel 搪瓷porcelain insulator 瓷绝绿体porch 边缘pore 细孔pore diameter 孔径pore structure 细孔结构,毛孔结构porime focus 主反射镜焦点poriness 多孔性porosint 多孔材料porosity (1)多孔性(2)孔隙率porosu solid 多孔固体porous 多孔的porous cladding 多孔包层porous glass 多孔玻璃porous material 疏松材料porphyrin 咐林Porro prism 波罗棱镜Porro prism erecting system 波罗镜正像系统Porrotelescope 波罗望远镜。
光电专业英语单词知识讲解
光电专业英语单词专英单词Chapter 1 Geometrical Optics1.1 Models of light: Rays and Waves 1.2 Reflection and Refraction1.3 Total internal Reflection 1.4 Thin lenses1.5 Locating Images by Ray Tracing 1.6 Thin Lens Equation1.7 Spherical Mirrors 1.8 lens Aberrationelectromagnetic spectrum 电磁波谱 parallel ray 平行光线reflection 反射 refraction 折射 incident beam 入射光束outgoing ray 出射光束 the angle of reflection 反射角specular reflection 镜面反射 diffuse reflection 漫反射optically denser medium 光密媒质 optically thinner medium 光疏媒质transparent medium 透明介质 prism 棱镜 index of refraction 折射率positive lens 正透镜 negative lens 负透镜 optical axis 光轴optical instument 光学仪器 focal point 焦点 curvature 曲率paraxial approximation 傍轴近似 achromatic lens 消色差透镜object distance 物距 image distance 像距 focal length 焦距the lateral of linear magnification 横向放大率 spherical mirror 球面镜curved mirror 曲面镜 concave mirror 凹面镜 convex mirror 凸面镜spherical aberration 球差 coma / coma aberration 彗差field curvature 场曲 distortion 畸变 chromatic aberration 色差focusing mirror 聚焦面镜 objective lens 物镜 aspherics 非球面镜Chapter 2 Wave Optics2.1 Huygens’ Principle 2.2 Reflection and Refraction of Light Waves2.3 Interference of Light 2.4 Interference of Thin Films2.5 Diffraction by a Single Slit 2.6 Multiple-Slit Diffraction and Gratings2.7 Resolution and the Rayleigh Criterion 2.8 Dispersion2.9 Spectroscopes and Spectra 2.10 Polarization 2.11 Scatteringwave crest 波峰 wave trough 波谷 wave surface /wavefront 波阵面constructive interference 相长干涉 destructive interference 相消干涉diffraction grating 衍射光栅 spectrometer 分光计 polarization 偏振Rayleigh scattering 瑞利散射 optical activity 旋光性 aperture 孔径half wave loss 半波损失 fringes of equal inclination 等倾条纹fringes of equal thickness 等厚条纹 diffraction grating 衍射光栅multiple-beam interference 多光束干涉 resolution 分辨率wavefront splitting interference 分波前干涉 diffraction aperture 衍射孔径amplitude splitting interference 分振幅干 wave velocity 波速spectroscope 分光镜 longitudinal wave 纵波 transverse wave 横波Chapter 3 Optical Instruments3.1 The eye 3.2 The Magnifying Glass3.3 Cameras and Projectors 3.4 Compound Microscopes3.5 Telescope 3.6 Other lensesPupil 瞳孔 Cornea 角膜 Lens 晶状体 Retina 视网膜near point 近点 far point 远点 Astigmatism 散光Myopia nearsightedness 近视 hyperopia farsightedness 远视zoom lens 变焦透镜 varifocal lens 变焦距镜头 Magnifying glass 放大镜Chapter 4 Principles of Lasers4.1 Laser Principle 4.2 Types of Lasers4.3 Control of The Laser Outputtransition 跃迁 spontaneous emission 自发辐射 excited state 激发态stimulated emission 受激辐射 ground state 基态LASER —Light Amplification by Stimulated Emission of Radiationresonant cavity 谐振腔 pumped light 泵浦光;抽运光population inversion 粒子数反转 population distribution 粒子数分布bandwidth 带宽 wavetrain 波列 gain 增益 etalon 标准具feedback 反馈 threshold 阈值 multimode 多模 ring resonator 环形谐振腔stable and unstable resonators 稳定腔和非稳腔 the confocal resonator 共焦腔Semiconductor Lasers 半导体激光器 Solid State Lasers 固体激光器Fiber laser 光纤激光器 Ion and Atomic Lasers 离子及原子激光器Excimer laser 准分子激光器 Electro-ionization Laser 电致电离激光器Plasma Laser 等离子体激光器4.2.1 Q-Switching4.2.2 Modulation of the Laser Output4.2.3 Mode Locking for Ultrashort PulsesQ switch Q 开关;调Q birefringence 双折射 isolator 隔离器piezo-electric crystal 压电晶体 quarter wave plate ¼ 波片harmonic wave 谐波 Acousto-optic modulation 声光调制Magneto-optic modulation 磁光调制 electro-optic modulation 电光调制SPM Self-phase Modulation 自相位调制PCM Pulse Code Modulation 脉冲编码调制active mode locking 主动锁模 passive mode locking 被动锁模4.3.1 Laser Manufacturing Technology 4.3.2 Laser Radar4.3.3 Lasers in MedicineLaser Welding 激光焊接 Laser Heat Treatment 激光热处理Laser Cutting 激光切割 Laser Marking 激光打标Laser Drilling 激光打孔 arc welding 电弧焊Laser Heat-Conduction Welding 激光热传导焊接Laser Deep Penetration Welding 激光深熔焊接laser cladding technology 激光熔覆技术Laser Texturing Technology 激光毛化技术Chapter 5.1 optical communicationcontinuous wave 连续波 transverse electric mode 横电模transverse magnetic mode 横磁模 core 纤芯 cladding 包层SBS stimulated Brillouin Scattering 受激布里渊散射SRS stimulated Raman scattering 受激拉曼散射Multimode Fiber 多模光纤 Single Mode Fiber 单模光纤SIOF Step-Index Optical Fiber 阶跃折射率分布光纤GIOF Graded-Index Optical Fiber 渐变折射率分布光纤GVD Group Velocity Dispersion 群速度色散PMD Polarisation Mode Dispersion 偏振模色散Waveguide dispersion 波导色散 Material dispersion 材料色散FDM frequency division multiplexing 频分复用TDM Time Division Multiplexing 时分复用WDM Wavelength Division Multiplexing 波分复用DWDM Dense Wavelength Division Multiplexing 密集波分复用LED light emitting diode 发光二极管LD laser diode 激光二极管APD Avalanche photo Diode 雪崩光电二极管OFA Optical Fiber Amplifier 光纤放大器SLA/SOA semiconductor laser/optical amplifier 半导体光放大器preamplifer 前置放大器 active component 有源器件 attenuator 衰减器Transmitter 发射机 low pass filter 低通滤波器 isolator 隔离器Optical Circulator 光环行器 Optical switch 光开关 Passive component 无源器件ADM Add Drop Multiplexer 分插复用器AWG arrayed-waveguide grating 阵列波导光栅Ethernet 以太网 Internet of Things 物联网AON Active Optical Network 有源光网络PON Passive Optical Network 无源光网络PDH Plesiochronous Digital Hierarchy 准同步数字体系SDH Synchronous Digital Hierarchy 同步数字传输体系Chapter 5.2 Holographyreconstruction 再现 development 显影photosensitive medium 感光介质 Optical Date Storage 光数据存储。
Study of thermal stability of ZnOB films grown by LPCVD technique
Applied Surface Science 258 (2012) 6018–6023Contents lists available at SciVerse ScienceDirectApplied SurfaceSciencej o u r n a l h o m e p a g e :w w w.e l s e v i e r.c o m /l o c a t e /a p s u scStudy of thermal stability of ZnO:B films grown by LPCVD techniqueH.Zhu,H.Jia ∗,D.Liu,Y.Feng,L.Zhang,i,T.He,Y.Ma,Y.Wang,J.Yin,Y.Huang,Y.MaiBaoding Tianwei Solarfilms Co.,Ltd.,071051Baoding,Hebei Province,PR Chinaa r t i c l ei n f oArticle history:Received 3December 2011Received in revised form 14February 2012Accepted 17February 2012Available online 24 February 2012Keywords:ZnO:B LPCVDLight trapping Near infrareda b s t r a c tZinc oxide thin films with different boron doping levels (ZnO:B)are prepared by low pressure chemical vapor deposition (LPCVD)technique.All films here exhibit a pyramid-like surface texture.Stability of the ZnO:B films is systematically investigated through a post heat treatment at ambient temperatures of 300◦C and 250◦C for different durations.It is found that total transmission (TT)of these films at near infrared (NIR)wavelength range increases with the enhanced thermal treating intensity,which could be attributed to decrease of free carrier concentration inside the films.Moreover,light absorption in NIR wavelength range decreases profoundly with the increasing carrier concentration after a post thermal treatment in particular for highly doped ZnO:B films.However,morphology of these ZnO:B films does not vary after the thermal treatment and thus the corresponding light scattering properties do not change as well.Therefore,the thermally treated ZnO:B films may lead to an increase in light-generated current and resulting a higher cell efficiency due to the enhancement of TT when they work as front contact in silicon thin film solar cells.© 2012 Elsevier B.V. All rights reserved.1.IntroductionBoron doped zinc oxide (ZnO:B)thin films,grown by low pres-sure chemical vapor deposition (LPCVD)technique,as an excellent transparent conductive oxides (TCO)material,are widely used in silicon based thin film solar cells as front contact or back contact [1–3].Electrical and optical properties as well as mor-phologies of the ZnO:B films vary when prepared at different deposition conditions such as substrate temperature,working pres-sure and different reactive gas flow rates (diethyl zinc,diborane and water),etc.For undoped ZnO films with thickness between 2and 2.5m,the surface topography profoundly varies with the enhanced substrate temperature from 130◦C to 236◦C [2].In addi-tion,a pyramid-like surface structure with an average grain size up to 400nm is achieved at 155◦C.For such a type of ZnO films,the grain size increases with the enhanced thickness [1].On the other hand,high doping level,i.e.high ratio of diborane (B 2H 6)over diethyl zinc (DEZ)during the growth,leads to a decrease in the average grain size of the ZnO:B films compared to films with a low doping level or un-doped films [1].Rough ZnO:B films with large pyramid-like surface structure would greatly increase light-generated current when they are applied to silicon based thin film solar cells,which is attributed to their excellent light scattering ability leading to a high light absorption of the Si film.Such a technique has been successfully transferred to mass production in∗Corresponding author.E-mail address:jiahaijun@btw-solarfi (H.Jia).photovoltaic industry,in which the corresponding TCO production system TCO 1200was so far developed by Oerlikon Solar [4].It is reported that LPCVD ZnO:B films with large pyramid surface texture as well as good electrical and optical properties (high Hall mobility and high haze)can be obtained at a substrate temperature of 155◦C [2],which is far lower than that for sputtered aluminum doped zinc oxide (ZnO:Al)films [5].For sputtered ZnO:Al films,car-rier concentration of aluminum doped zinc oxide (ZnO:Al)films can be reduced by a post heat treatment.As a consequence,light losses in the NIR spectral range decreases and the light-generated current increases [5].Hence,the decrease of carrier concentration in ZnO:B films by a thermal treatment would also be very helpful to enhance the total transmission at NIR spectral range and therefore result-ing a higher current and conversion efficiency for silicon based thin film solar cells.In this study,the ZnO:B films with different doping levels and thicknesses grown by LPCVD technique were thermally treated at different temperatures for different durations,i.e.differ-ent treating intensity.The electrical and optical properties of these films were systematically studied.Moreover,the variation of sur-face morphology was checked,and the variation of absorption in NIR wavelength with increasing resistivity is discussed.2.Experimental detailsThe ZnO:B films were deposited on 3.2mm thick low iron float glass substrates (1.1m ×1.3m)by LPCVD technique with a TCO 1200deposition system that is developed by Oerlikon Solar company.Substrate temperature was below 200◦C and working pressure was about 0.5mbar.DEZ and H 2O were supplied into the0169-4332/$–see front matter © 2012 Elsevier B.V. All rights reserved.doi:10.1016/j.apsusc.2012.02.098T T a n d A b s o r p t i o n (%)Fig.1.The different with d)of film with reaction gas were phase during film the ratio (B 2to ing 10cm ×heat ferent down to 2×10Pa.Optical properties such as total transmission (TT),diffuse trans-mission (DT)and reflection as well as absorption of these films were characterized by a photon spectrometer (Pekin Elmer Lambda 950).The thicknesses of ZnO:B films were determined by an optical fit-ting procedure in a XY-Table test set-up (XYT v1.1from Oerlikon Solar company)based on the tested optical curves and the corre-sponding optical fits.Electrical properties were measured using a Hall test system (Accent HL5500Hall System).Morphology of the ZnO:B films was checked by the field emission scanning electron microscope (FE-SEM,TDCLS4800).3.Results3.1.Optical propertiesFig.1shows the total transmission (TT)and absorption of as-grown ZnO:B films with different doping ratio (B 2H 6/DEZ)from 0.17to 4and thickness of about 970nm.Moreover,the TT and absorption of as-grown ZnO:B films with doping ratio of 0.17and thickness of 1600nm are also added.As can be seen in Fig.1,the absorption in NIR wavelength range increases with increasing dop-ing ratio,which is due to the absorption by free carrier based on the Drude theory.Highly doped ZnO:B films with doping ratios of 0.4and 0.3exhibit the absorption peak positions near 2050nm and 2270nm,respectively,which are so-called plasma wavelength p .According to the following equationp =2 cne 2/ε0ε∞m (1)Fig.2.The shift absorption edge (a)and the corresponding optical band gaps (b)of as-grown ZnO:B films with different doping ratios (B 2H 6/DEZ)between 0.17and 4and different thicknesses.where c is the light velocity,n the carrier density,ε0dielectric constant,ε∞high frequency dielectric constant,m *effect mass of electron,the plasma wavelength increases with the decrease of car-rier concentration,which is confirmed by the observations here shown in Fig.1.As to the lowly doped ZnO:B films,the absorption peak cannot appear due to the limited measurement wavelength range (<2500nm).In the visible spectral range,all thinner films exhibit high average TT of more than 80%while the thicker film shows a little lower TT.The absorption edge for ZnO:B films with thickness of 970nm shifts towards short wavelength with the enhanced doping ratio or carrier density as shown in Fig.2(a),which is caused by the Burstein-Moss effect [6,7].In addition,the absorp-tion edge of lowly doped ZnO:B films (B 2H 6/DEZ =0.17)shifts towards long wavelength with the increasing thickness,which wasobserved by Fa ¨yas well [8].However,it is hard to identify the vari-ation of carrier concentration due to different thicknesses.Basing on the following Eq.(2)and measured optical properties (reflec-tion and total transmission,R ( )and TT ( )),we could calculate the absorption coefficient that is related with the film thickness d .˛=1dIn1−R ( )TT ( )(2)Since the ZnO:B film is a direct band gap semiconductor,they obey the following experiential Eq.(3)˛=A (h v −E g )1/2(3)6020H.Zhu et al./Applied Surface Science 258 (2012) 6018–60234008001200160020002400Wavelength (nm)T T , D T a n d A b s o r p t i o n (%)(a)350360370380390400410420Wavelength (nm)T T (%)(b)Fig.3.The variations of TT,absorption and diffuse transmission (DT)(a)and the red shift of the absorption edges (b)for ZnO:B films thermally treated at 300◦C from 0min to 90min.where h v is the photo energy at different frequency v ,E g is energy band gap and A is a constant.Therefore,we could extrap-olate the optical band gaps as shown in Fig.2(b).1600nm thick ZnO:B film (B 2H 6/DEZ =0.17)shows an optical band gap of 3.35eV,which is higher than that of thin ZnO:B films(3.30eV).Similar trend was observed by Fa ¨y[8],which is due to an inhomogeneous growth with respect to the doping level.After the thermal treatments under different treating intensity,i.e.different ambient temperatures and thermal treating durations,all films show the same variation trend in optical properties.Tak-ing the ZnO:B film with the doping ratio of 0.17as an example,the TT in NIR wavelength range increases with the lengthened treat-ing duration from 0min to 90min at 300◦C shown in Fig.3(a).The corresponding absorption varies conversely.Such a variation is mainly due to the decrease of carrier density,which is reflected from the red shift of the absorption edge as shown in Fig.3(b).How-ever,all diffuse transmission (DT)curves show almost no changes over the whole wavelength range.It indicates that the surface morphology almost does not change.Focused on the absorption of carrier or TT in NIR spectral range for all films,the TT in the NIR wavelength range,for example at 1600nm,increases with increasing treating duration as shown in Fig.4(a).Moreover,TT of highly doped ZnO:B films at 1600nm varies strongly than the lowly doped films.For instance,the TT of ZnO:B films (B 2H 6/DEZ =0.4)varies from 51%to 75.6%while TT of lowly doped ZnO:B films505560657075808590T T a t 1600n m (%)Heating duration at 300C (min)(a)T T a t 1600n m (%)Heating duration at 250C (min)(b)Fig.4.The variation of TT at 1600nm for all ZnO:B films thermally treated for different durations at 300◦C (a)and 250◦C (b).(B 2H 6/DEZ =0.17)only changes from 72.9%to 83.5%after the same heat treatment.Fig.4(b)shows the same variation tendency for ZnO:B films thermally treated at 250◦C.However,the variation is smaller even though the thermally treating duration is up to 180min.3.2.Electrical propertiesCorresponding to the above variations of optical properties,the film resistivity increases with the increasing treating duration for the ZnO:B films thermally treated at 300◦C and 250◦C as shown in Fig.5(a)and (d),respectively.It is due to the decrease of the mobility (see Fig.5(b)and (e))as well as the reduction of car-rier concentration (see Fig.5(c)and (f)).After a stronger thermal treatment at 300◦C,the mobility of ZnO:B films degrades from 22cm 2/Vs down to 10cm 2/Vs and the carrier concentration reduces from 2.3×1020cm −3to 7.9×1019cm −3.In addition,the carrier concentration of the as-grown 1600nm thick ZnO:B films is more than that of the as-grown thinner ZnO:B films (B 2H 6/DEZ =0.17)as shown in Fig.5(c),which accords with what observed in optical properties above.Furthermore,the carrier concentration of thicker ZnO:B films (B 2H 6/DEZ =0.17)is higher than the thinner ZnO:B films (B 2H 6/DEZ =0.17)over the whole thermal treatment process.ZnO:B films thermally treated at 250◦C show the similar varia-tion trend in degradations of mobility and carrier concentrationH.Zhu et al./Applied Surface Science258 (2012) 6018–60236021Fig.5.The variation of electrical properties at1600nm for all ZnO:Bfilms thermally treated for different durations:at300◦C(a)resistivity,(b)carrier concentration(c) mobility,and at250◦C(d)resistivity,(e)carrier concentration(f)mobility.as shown in Fig.5(e)and(f).However,the variations are much smaller than that of the strongly treated ZnO:Bfilms.Therefore it indicates that the high thermal treatment intensity leads to a faster degradation in the electrical parameters of ZnO:Bfilms in this study.3.3.Variation of the morphologyEven though there are profound variations in the optical prop-erties such as the TT and absorption after thermally treatments as mentioned above,the DT seems no change as shown in Fig.4(a). Therefore one may guess that the morphology does not change. Such a prediction is confirmed by measured SEM images.Fig.6(a) shows the morphology of as-grown ZnO:Bfilms with the doping ratio of0.17and the thickness of965nm.The as-grown ZnO:Bfilms show some pyramid grains on the surface with the feature sizeıof about180nm,which is defined as the square root of the mean of the projected area of the pyramids by Fa¨y et al.[1].After90min thermal treatment at300◦C,thefilm shows almost the same surface struc-ture(see Fig.6(b)).Thus the thermal treatment at300◦C can not change the surface structure and the internal grain structures as well.It is similar to the thermally treated ZnO:Alfilms reported by Berginski et al.[9].All other post-treated ZnO:Bfilms here show almost the same morphologies as as-grownfilms after ther-mal treatments in this study(no shown here).Moreover,thefilm structure in this study is also almost not changed by the thermal treatment conditions here.Allfilms display(11¯20)preferential orientation and columnar shape grains[1,2].It is well known here that the feature sizes of morphology increases with the increasing film thickness since the columnar shape grains grow up as thefilm thickness increases.4.DiscussionAs mentioned above,not only the as-grown ZnO:Bfilms with different doping ratios but also the thermally treated ZnO:Bfilms for different durations show the different absorptions in NIR wave-length range and a blue or red shift for the absorption edge in ultraviolet(UV)wavelength range.These effects are caused by the different carrier concentrations.What is different is that the absorption in NIR wavelength is caused by the free carrier(elec-trons here)inside the conductive band according to the classic Drude theory[10]while the blue shift of the absorption is due to the transition of different electrons between conductive band and valence band based on Burstein-Moss effect[6,7].Frank et al.[11]6022H.Zhu et al./Applied Surface Science 258 (2012) 6018–6023Fig.6.The SEM images of as-grown ZnO:B film (a)and thermally treated ZnO:B film at 300◦C for 90min (b).and Chopra et al.[10]reported that the photon loss (absorbed by TCO films)by the free carrier is given byA =2e 3nd4 ε0c Nm(4)where is the wavelength,n carrier concentration,¯dfilm thick-ness,N refraction index of the film material,m *effective mass of an electron and mobility.Therefore,the light absorption in NIR wavelength range is also related with the films thickness.Such a relationship is proved by the results of this study as shown in Fig.7.Moreover,high doping level (or high carrier concentration)leads to high absorption in NIR wavelength range,and the absorp-tion almost increases linearly with increasing carrier concentration.Additionally,thicker films results in a higher absorption in this wavelength range as well (in the open circle region in Fig.7).The decrease of carrier concentration after a heat treatment,leading to an increase in the TT in NIR wavelength as discussed above,may be attributed to the chemisorption of oxygen into ZnO films [12].These chemisorbed oxygen atoms could annihilate the shallow donor energy levels which come from the oxygen vacan-cies and interstitial zinc atoms.The interstitial zinc atoms could also diffuse to the film surface and then evaporate from the sur-face together at high treatment intensity (high heating temperature and/or long treating duration).Additionally,the interstitial oxygen atoms and zinc vacancies could form due to the volume diffuse and evaporation effects at a high environment temperature [13].0.00.5 1.0 1.5 2.0 2.5 3.0 3.548121620242832364044Carrier concentration (1020cm -3)A b s o r p t i o n a t 1600n m (%)Fig.7.The absorption at 1600nm of all as-grown and thermally treated ZnO:B filmsas a function of carrier concentration.As a result,all these effects would lead to a further reduction in the carrier concentration.It has been reported that a decrease in carrier concentration of ZnO:Al films after a heat treatment in a vacuum chamber leads to an increase in cell current density and cell efficiency when these treated ZnO:Al films are applied in silicon thin film solar cells as front contact [5,9].Based on the observations in this study,the carrier concentration of LPCVD ZnO:B films can also be greatly reduced by a post thermal treatment and therefore TT will pro-foundly increases.Such a method could result in a high cell current as well when they are applied in silicon thin film solar cells,which is similar to the application of ZnO:Al films in silicon based thin film solar cells.These works will be carried out in the near future.5.ConclusionsZnO:B films with different doping ratios (B 2H 6/DEZ =0.17,0.3and 0.4)were grown by LPCVD technique.The TT of the ZnO:B films in NIR wavelength range decreases with the enhanced doping ratio due to the photon losses by the much more carrier absorption.Moreover,the thicker films have a higher carrier concentration due to an inhomogeneous film growth,which is identified from the extrapolation of optical band gaps.After a thermal treatment at 300◦C and 250◦C in a vacuum chamber,the TT in NIR wavelength range of LPCVD ZnO:B films increases with the treating duration.In addition,highly doped film leads to a profound enhancement of TT in NIR wavelength range after the thermal treatment.LPCVD ZnO:B films thermally treated by such a heat treating method has a great potential to enhance the cell current when they are applied into silicon thin film solar cells.AcknowledgementsThe authors would like to thank the measurement group of R&D Center for their excellent work in optical and thickness measure-ments.The authors also would like to thank Dr.X.Song of Tianwei Solarfilms and Dr.X.Zhang of Nankai University for their great help in SEM measurement and Hall test,respectively.References[1]S.Fa ¨y,L.Feitknecht,R.Schluchter,U.Kroll,E.Vallat-Sauvain,A.Shah,Solar Energy Materials and Solar Cells 90(18/19)(2006)2960.[2]S.Fa ¨y,U.Kroll,C.Bucher,E.Vallat-Sauvain,A.Shah,Solar Energy Materials and Solar Cells 86(3)(2005)385.H.Zhu et al./Applied Surface Science258 (2012) 6018–60236023[3]A.Shah,J.Meier,A.Buechel,U.Kroll,J.Steinhauser,F.Meillaud,H.Schade,D.Domine,Thin Solid Films502(1/2)(2006)292.[4]A.Zindel,M.Poppeller,M.Stecher,The24th European Photovoltaic SolarEnergy Conference,Hamburg,Germany,2009,p.2679.[5]M.Berginski,J.Hüpkes,W.Reetz,B.Rech,M.Wuttig,Thin Solid Films516(17)(2008)5836.[6]E.Burstein,Physics Review93(1954)632.[7]T.S.Moss,Proceedings of the Physical Society of London Section B67(418)(1954)775.[8]S.Fa¨y,Science of Microtechnique,Institute of procuction and Robotic,ÉcolePolytechnique Fédérale de Lausanne,Lausanne,2003.[9]M.Berginski,B.Rech,J.Hüpkes,G.Schöpe,M.N.van den Donker,W.Reetz,T.Kilper,M.Wuttig,The21st European Photovoltaic Solar Energy Conference, Dresden,Germany,2006,p.1539.[10]K.L.Chopra,S.Major,D.K.Pandya,Thin Solid Films102(1)(1983)1.[11]G.Frank,E.Kauer,H.Kostlin,Thin Solid Films77(1–3)(1981)107.[12]T.Minami,H.Nanto,S.Shooji,S.Takata,Thin Solid Films111(2)(1984)167.[13]F.Ruske,M.Roczen,K.Lee,M.Wimmer,S.Gall,J.Hüpkes,D.Hrunski,B.Rech,Journal of Applied Physics107(013708)(2010)1.。
photonics的under review -回复
photonics的under review -回复题为“Photonics: Exploring the Revolutionary Field of Light-based Technologies”Introduction to Photonics and its Importance:Photonics is a revolutionary field of science and engineering that deals with the study, manipulation, and utilization of light. It encompasses various technologies and applications, including the generation, transmission, modulation, and detection of light, as well as the development of optical devices and systems. Photonics has rapidly gained attention due to its potential to revolutionize various industries, including telecommunications, data storage, medicine, and energy.1. What is the Scope of Photonics?Photonics covers a broad range of disciplines, including optics, optoelectronics, and laser science. It involves the study oflight-based phenomena, such as interference, diffraction, and polarization, as well as the utilization of light for various purposes, such as imaging and communication. The scope of photonics extends from fundamental research on light-matter interactions to the design and development of cutting-edge photonic devices andsystems.2. The Role of Photonics in Telecommunications:With the increasing demand for high-speed and high-bandwidth communication networks, photonics plays a crucial role in enabling faster and more reliable data transmission. Photonics-based technologies, such as fiber optics and optical amplifiers, allow for the efficient transfer of information over long distances with minimal loss and distortion. Additionally, advanced photonic devices like modulators and detectors enable the manipulation and detection of optical signals in telecommunications systems.3. Photonics in Data Storage and Computing:Photonics has the potential to revolutionize data storage technologies by increasing storage density and improving data access speeds. Optical data storage systems, such as Blu-ray discs, utilize lasers and photonic principles to read and write data. Moreover, the emerging field of photonics-based computing, known as "optical computing," aims to leverage the speed and parallelism of light for faster and more efficient data processing.4. Applications in Medicine and Biotechnology:Photonics has significant applications in medicine, enablingnon-invasive and precise diagnostics and treatments. Techniques like optical coherence tomography (OCT) provide high-resolution imaging of tissues, aiding in the early detection of diseases. Laser-based therapies, such as photodynamic therapy andlaser-assisted surgery, offer targeted and minimally invasive treatments. Moreover, photonics plays a vital role in DNA sequencing, protein analysis, and other biotechnological research areas.5. Photonics in Energy and Sustainability:Photonics contributes to advancements in renewable energy generation and energy efficiency. Solar cells, based on photovoltaic principles, convert sunlight directly into electricity. Photonics also enables the development of more efficient lighting, such aslight-emitting diodes (LEDs), which consume less energy and have longer lifetimes compared to traditional lighting sources. Furthermore, photonics-based sensors and monitoring systems help optimize energy production and maximize resource efficiency.6. Ongoing Research and Future Prospects:The field of photonics is continuously evolving, with ongoingresearch to improve existing technologies and develop new ones. Researchers are exploring the use of novel materials, such as metamaterials and quantum dots, to manipulate light in unprecedented ways. The integration of photonics with other emerging fields, such as nanotechnology and artificial intelligence, holds great promise for future innovations. Additionally, advancements in integrated photonics and compact photonic chips are likely to further miniaturize and enhance the performance of photonic devices.Conclusion:Photonics is a rapidly growing field with immense potential for technological advancements across various sectors. Its impact on telecommunications, data storage, medicine, and energy is already evident, and ongoing research is expected to bring about further breakthroughs. As we delve deeper into the realm of photonics, we unlock new possibilities for revolutionizing our world through the power of light.。
半导体一些术语的中英文对照
半导体一些术语的中英文对照离子注入机ion implanterLSS理论Lindhand Scharff and Schiott theory 又称“林汉德-斯卡夫-斯高特理论”。
沟道效应channeling effect射程分布range distribution深度分布depth distribution投影射程projected range阻止距离stopping distance阻止本领stopping power标准阻止截面standard stopping cross section 退火annealing激活能activation energy等温退火isothermal annealing激光退火laser annealing应力感生缺陷stress-induced defect择优取向preferred orientation制版工艺mask-making technology图形畸变pattern distortion初缩first minification精缩final minification母版master mask铬版chromium plate干版dry plate乳胶版emulsion plate透明版see-through plate高分辨率版high resolution plate, HRP超微粒干版plate for ultra-microminiaturization 掩模mask掩模对准mask alignment对准精度alignment precision光刻胶photoresist又称“光致抗蚀剂”。
负性光刻胶negative photoresist正性光刻胶positive photoresist无机光刻胶inorganic resist多层光刻胶multilevel resist电子束光刻胶electron beam resistX射线光刻胶X-ray resist刷洗scrubbing甩胶spinning涂胶photoresist coating后烘postbaking光刻photolithographyX射线光刻X-ray lithography电子束光刻electron beam lithography离子束光刻ion beam lithography深紫外光刻deep-UV lithography光刻机mask aligner投影光刻机projection mask aligner曝光exposure接触式曝光法contact exposure method接近式曝光法proximity exposure method光学投影曝光法optical projection exposure method 电子束曝光系统electron beam exposure system分步重复系统step-and-repeat system显影development线宽linewidth去胶stripping of photoresist氧化去胶removing of photoresist by oxidation等离子[体]去胶removing of photoresist by plasma 刻蚀etching干法刻蚀dry etching反应离子刻蚀reactive ion etching, RIE各向同性刻蚀isotropic etching各向异性刻蚀anisotropic etching反应溅射刻蚀reactive sputter etching离子铣ion beam milling又称“离子磨削”。
光电信息专业英语单词句子中英翻译
词汇Ray Optics射线光学Refraction 折射Reflection 反射Index of Refraction 折射率Optical spectrum 光谱Dispersion 色散lens 透镜Total Internal Reflection全内反射Prisms棱镜right isosceles triangles正等腰三角形Spherical refracting surface 球面折射面sign convention符号法则paraxial approximation近轴近似aberration像差chromatic aberration色差collimated平行的;使平行critical angle临界角defect缺点,缺陷incident入射的inclination倾斜角;偏向magnitude数量级virtual image 虚像Diffraction 衍射Interference 干涉aperture 孔径complex exponential function复指数函数complex conjugate复共轭monochromatic单色的optical path difference 光程差polarization 偏振resonator谐振器resolution分辨率Holography 全息术wavelength 波长microscope 显微镜beam splitter 分束器Rainbow holography彩虹全息术Volume holograms 体全息图Computer-generated holography 计算机全息术Spatial Filtering空间滤波gratings光栅harmonics interferogram谐波干涉图pupil function 光瞳函数principal maxima 主极大值Mode Locking 波模锁定;振荡型同步Transverse modes 横向模式Laser rangefinder激光测距仪navigation 导航Photodetector光电检测器photomultiplier光电倍增管Photon 光子Optical Fiber Communication 光纤通信fiber 纤维Optical Loss 光学损失Group集体velocity 速度nonlinearity非线性anomalous-dispersion反常色散Stimulated Raman Scattering 受激拉曼散射Self-Phase Modulation 相位调制效应Cross-Phase Modulation 交叉相位调制bandwidth 带宽optical switches光开关Photodetectors光电探测器crystal 晶体Birefringence 双折射electron 电子Mechanical and thermal strength 机械和热强度surface 表面Bandgap 能带carrier concentration 载体浓度discharge 放电photovoltaic 光伏Optical Thin Film Technology光学薄膜技术Photolithography 光刻, biophotonics生物光子学,3D Display Technology 3 d显示技术,Infrared Detection Technology红外探测技术exposure 曝光irradiation 辐照nanoparticle纳米颗粒句子We treat light beams as rays that propagate along straight lines, except at interfaces between dissimilar materials, where the rays may be bent or refracted. This approach, which had been assumed to be completely accurate before the discovery of the wave nature of light, leads to a great many useful results regarding lens optics and optical instruments.我们将光束处理为沿着直线传播的光线,除了在不同材料之间的界面处,其中光线可以被弯曲或折射。
lithography
Ch.1. Lithography* Transfer copies of a master pattern onto the surface of a solid material, such as a silicon wafer.•Photo-lithography was widely used for IC industries, which is basically 2-D techniques, creating major constraints for building microstructures which often exhibit extreme topographies.1. Masks* The stencil used to generate a desired pattern in resist-coated wafers over and over again is called a mask.•Photomask: Chrome maskMask absorber pattern (e.g., 800 A thick chrominum layer)Optically flat glass substrate: transparent to near UV (350 ~ 500 nm)~ mercury lamp g-line 436 nmi-line 365 nmQuartz plate: transparent upto deep UV (150 ~ 300 nm)~ shorter wavelength light penetrate furtherinto the resist materialThe resisting polymer thicknessNote page 4. a1Quality of spin coating is important –density of defects.you can try re-spin coating after erasing PR using acetonThe film thickness uniformity ~ +-0.3 % (e.g., 5 nm for 1.5 micron thick PR) Typical thickness 0.5 ~ 2 microns. -> limitation in height.MEMS needs large depth: 1 cm -> LIGA process can achieve 1 cm thicknessstress related problem, deeper penetration,etching problemIn my case –up to 500 microns.After spin coating, the resist still contains up to 15 % solvent and may contain Built in stress. The wafers are therefore soft baked at 75 ~ 90°for 10 minutes To remove solvents and stress and to promote adhesion of the resist layerTo the wafer.(oven or hot plate)UW-Madison: 90 °at 30 mins(oven)Caution: 1. The temperature must not exceed 100 °-> cooking!2. Sometimes, the wafer is soft baked even before spin-coating-> remove condensed moistures on the Si surface.3. stress & adhesion becomes more important as the thicknessincreases.4. Photoresist toneThe principal components of photoresist are a polymer, a sensitizer and aCasting solvent.The polymer changes structure when exposed to radiationThe solvent allows spin application and formation of thin layer on the wafer surface Sensitizers control the chemical reaction in the polymeric phasePositive PR: Photochemical reaction during exposure weakens the polymer by Rupture or scission of polymer chains -> exposed polymer becomes more Soluable. E.g., the development rate is about 10 times larger.Negative PR: The reaction strngthens the polymer by random cross-linkage of polymer chains. -> less soluable.Caution! PR bottle must not be exposed under white light.PR is stored in a refrigeratore.g., UV PR -> UV must be avoided.Yellow room.5. Exposure and Post Exposure TreatmentAfter soft baking, the resist-coated wafers are transferred to some type of Exposure system.Note page 5. a2The purpose of the illumination system1.Proper intensity2.Directionality3.Uniformity4.Spectral characteristicsNearly perfect transfer of the mask image onto the resist in the form ofA latent imageDUV: 150 ~ 300 nm near UV:350~500 nm ~ mercury lamp I or g line Dose (J/cm2): incident energy= incident light intensity (W/cm2) x timefix varyDose calculation becomes very important as the thickness becomes highere.g., LIGA:Note page 5. a3The radiation induces a chemical reaction in the exposed areas of the photo Resist, alternating the solubility of the resist.6. DevelopmentDevelopment transforms the latent image formed during exposure into a Relief image which will serve as a mask for further subtractive and additive Steps.Wet development(most widely used) utilize the variation in molecular weight Change (i.e., the change in solubility) due to cross-linking or chain scission.Two methods1.Immersion: petridish, agitation. E.g., 30 seconds in petridish& agitation2.Spray developer (more effective)(UW-Madison) PR Shipley 1805Spin-coating 40s at 3000 rpmnear UV: 9 seconds at 27.6WMicroposit MF-26A developer, 30s in petridish, hand shakingExamine using microscopeNote page 7. a4 * There is also an automated developing systemDry developmentThe use of solvent leads to some swelling of the resist and a loss of adhesion Of the resist to the Substrate (e.g., LIGA process). Dry development could Overcome these problems –still in the exploratory stage.Gas phase preferential reaction.e.g., Oxygen plasma removes PR.7. De-scumming and post-bakingDe-scumming(not necessary): A mild oxygen plasma treatment removes Unwanted resist left behind after development.Mass transfer of developer is poor for the high aspect ratio structureswith small openings -> Descumming.De-scumming removes unexposed PR.Post-Baking: Post-baking (hard-baking) removes residual developing solvents And anneals the film to promote interfacial adhesion of the resist weakenedBy developer penetration along the resist-substrate interface or by swellingOf the resist.Hard baking also improves the hardness of the film.Hard baking is done at 120°for 20 mins.If it is very high (e.g., 130 °), it is very hard to remove PR. Be careful!.TerminologyClean Room ClassificationsClass 1000Class 100Total # of particles / ft3(Approximately 0.5 micron particle)Critical Dimension: The absolute sizeOf a minimum feature in a micro-Structure, whether it involves a line width,Spacing, is called the critical dimension(CD)。
Efficient design and optimization of photonic crystal waveguides and couplers The Interface Diffract
Efficient design and optimization ofphotonic crystal waveguides andcouplers:The Interface DiffractionMethodAlexander A.Green,Emanuel Istrate,and Edward H.SargentDepartment of Electrical and Computer Engineering,University of Toronto,Toronto,ONM5S3G4,Canadaaa.green@utoronto.caAbstract:We present the interface diffraction method(IDM),an efficienttechnique to determine the response of planar photonic crystal waveguidesand couplers containing arbitrary defects.Field profiles in separate regionsof a structure are represented through two contrasting approaches:the planewave expansion method in the cladding and a scattering matrix method inthe core.These results are combined through boundary conditions at theinterface between regions to model fully a device.In the IDM,the relevantinterface properties of individual device elements can be obtained fromunit cell computations,stored,and later combined with other elements asneeded,resulting in calculations that are over an order of magnitude fasterthan supercell simulation techniques.Dispersion relations for photoniccrystal waveguides obtained through the IDM agree with the conventionalplane wave expansion method to within2.2%of the stopband width.©2005Optical Society of AmericaOCIS codes:(230.3990)Microstructure devices;(230.7370)Waveguides.References and links1.K.M.Ho,C.T.Chan,and C.M.Soukoulis,“Existence of a photonic gap in periodic dielectric structures,”Phys.Rev.Lett.65,3152–3155(1990).2.K.Busch and S.John,“Photonic band gap formation in certain self-organizing systems,”Phys.Rev.E58,3896–3908(1998).3.S.G.Johnson and J. D.Joannopoulos,“Block-iterative frequency-domain methodsfor Maxwell’s equations in a planewave basis,”Opt.Express8,173–190(2001)./abstract.cfm?URI=OPEX-8-3-173.4.S.G.Johnson,S.Fan,P.R.Villeneuve,J.D.Joannopoulos,and L.A.Kolodziejski,“Guided modes in photoniccrystal slabs,”Phys.Rev.B60,5751–5758(1999).5.K.S.Yee,“Numerical solution of initial boundary value problems involving maxwells equations in isotropicmedia,”IEEE Trans.Antennas Propag.14,302–307(1966).6. A.Taflove and S.C.Hagness,Computational Electrodynamics:The Finite-Difference Time-Domain Method(Artech House,Norwood,MA,2000).7.G.Bastard,“Superlattice band structure in the envelope-function approximation,”Phys.Rev.B24,5693–5697(1981).8. C.M.de Sterke and J.E.Sipe,“Envelope-function approach for the electrodynamics of nonlinear periodicstructures,”Phys.Rev.A38,5149–5165(1988).9. 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B.S.Song,S.Noda,T.Asano,and Y.Akahane,“Ultra-high-Q photonic double-heterostructure nanocavity,”Nat.Mater.4,207–210(2005).30.R. B.Lehoucq, D. C.Sorensen,and C.Yang,ARPACK Users’Guide:Solution of Large ScaleEigenvalue Problems with Implicitly Restarted Arnoldi Methods(SIAM,Philadelphia,1998)./software/ARPACK/.31. E.Anderson,Z.Bai,C.Bischof,S.Blackford,J.Demmel,J.Dongarra,J.D.Croz,A.Greenbaum,S.Ham-marling, A.McKenney,and D.Sorensen,LAPACK Users’Guide,3rd ed.(SIAM,Philadelphia,1999)./lapack/lug/index.html.32.S.Boscolo,M.Midrio,and C.G.Someda,“Coupling and decoupling of electromagnetic waves in parallel2-Dphotonic crystal waveguides,”IEEE J.Quantum Electron.38,47–53(2002).33. D.M.Whittaker and I.S.Culshaw,“Scattering-matrix treatment of patterned multilayer photonic structures,”Phys.Rev.B60,2610–2618(1999).34. A.R.Cowan,P.Paddon,V.Pacradouni,and J.F.Young,“Resonant scattering and mode coupling in two-dimensional textured planar waveguides,”J.Opt.Soc.Am.A18,1160–1170(2001).35.L.C.Andreani and M.Agio,“Photonic bands and gap maps in a photonic crystal slab,”IEEE J.QuantumElectron.38,891–898(2002).36.S.F.Mingaleev and K.Busch,“Scattering matrix approach to large-scale photonic crystal circuits,”Opt.Lett.28,619–621(2003).1.IntroductionPhotonic crystals provide aflexible platform for the realization of many optical components including passive,active,and nonlinear devices.Waveguides employing photonic crystals have been studied widely because they confine light strongly and guide light over sharp bends with low losses.The complexity of the interaction between electromagnetic waves and these periodic#8231 - $15.00 USD Received 31 July 2005; revised 29 August 2005; accepted 30 August 2005 (C) 2005 OSA19 September 2005 / Vol. 13, No. 19 / OPTICS EXPRESS 7305structures,however,poses a large challenge for the intuitive,yet quantitative,understanding of their optical response.Because they are periodic,the behaviour of photonic crystals is completely and efficiently represented using a reduced-zone representation dispersion diagram[1,2,3]and its accompa-nying Bloch modes.These are calculated from the representation of the crystal in reciprocal space,working with the Fourier series of the dielectric constant.This Fourier space represen-tation,however,prevents the direct use of band structures and Bloch modes in the analysis and design of practical photonic crystal devices,which must necessarily be offinite size,and often incorporate deviations from periodicity.For waveguides,this problem has been overcome by the supercell method[4],where the waveguide including core and claddings is repeated peri-odically in order to allow a plane wave treatment.The periodic units,however,must be large enough to eliminate coupling between the parallel guides.Furthermore,the resulting modes must be inspected carefully in order to discard the unphysical modes with energy concentrated outside the core.The limitations of periodic representations are surmounted by thefinite-difference time-domain(FDTD)simulation method[5,6],one of the most common tools for the design of photonic crystal devices.FDTD simulations operate in real(direct)space and make few as-sumptions,if any,about the periodicity of the photonic crystal,enabling them to be applied to almost any structure.At the same time,however,these simulations are inefficient since they cannot apply results from one crystal unit cell to identical neighbouring ones.Between the extremes of complete periodicity and aperiodicity exist a variety of methods that take advantage of the results obtained efficiently from the periodic parts of a device while allowing some deviation from this periodicity.Envelope approximations,similar in concept to their use with semiconductor heterostructures[7],have been used to calculate pulse propagation in a nonlinear crystal[8]and for photonic crystal heterostructures[9].Here the periodicity of each crystal section is used to extract a set of parameters describing the crystal in the same way as effective masses are used in ing these parameters,an envelope equation can be written that does not include the periodicities explicitly and is therefore easy to solve.A similar approach was taken using multiple-scales techniques[10,11].Point and line defects have also been represented using Wannier functions forming a localized basis,similar to the tight-binding formalism[12].Wannier functions have also been used to calculate the resonant states of graded resonant cavities[13]and to derive a set of optimally adapted functions for the simulation of waveguides and cavities[14].The resonance of light in photonic crystals of finite size has been computed with a plane wave expansion over the entire slab[15].All these methods replace Maxwell’s equations with a simplified set of equations to be solved in the partially periodic structure.We have recently introduced a method that uses the Bloch modes of infinite photonic crys-tals to calculate the reflection,transmission,and diffraction of light at photonic crystal inter-faces[16].These coefficients,similar to the Fresnel coefficients for dielectric interfaces,can then be used to model photonic crystal devices that include interfaces between photonic crys-tals and homogeneous materials as a succession of effective materials,with propagation inside each material described by its respective band structure.This method has been shown to sim-ulate efficiently the response of point defect cavities,as well as line defect waveguides and waveguide couplers[17].So far this method has been limited by the fact that the devices could only contain large periodic sections,where the electromagneticfield profiles took the form of the bulk crystal modes,and homogeneous materials,with plane wave propagation.Most photonic crystal waveguides and defect cavities demonstrated so far are obtained by removing one cylinder,or a row of cylinders from a periodic2D crystal[18,19].In the process of optimizing the properties of these waveguides and resonant cavities,it was found that sig-#8231 - $15.00 USD Received 31 July 2005; revised 29 August 2005; accepted 30 August 2005 (C) 2005 OSA19 September 2005 / Vol. 13, No. 19 / OPTICS EXPRESS 7306nificant advantages can be obtained by the introduction of more elaborate defects.The rows of cylinders adjacent to the missing rows can,for example,be modified to affect the propagation in the core[20].Alternatively,the cylinders in the core do not have to be removed completely, as long as their diameter is changed[21,22].Transfer and scattering matrices have been used to model the transmission and reflection from photonic crystals that are periodic in two directions but not necessarily in the third.The same matrices have been used to compute the interaction of light with semi-infinite photonic crystals[23].In this paper we demonstrate that simulations conducted over photonic crystal unit cells alone are sufficient to determine the response of photonic crystal waveguides and couplers with complex defect ing our technique,which we refer to as the interface diffraction method(IDM),individual device elements,such as a row of cylindrical defects of a particular radius or a bulk crystal region,can be simulated independently and combined as needed to model a device.In contrast,the supercell waveguide simulation techniques described earlier require computational domains consisting of many unit cells and must be done on a case-by-case basis for even small changes in structure.The IDM also makes few assumptions about the crystal geometry and defect type,making it more general than other approaches.It can be applied to narrow or wide defect regions with abrupt or graded changes in structure,all within the same theoretical framework without large increases in computation time.Moreover,the IDM achieves its computational benefits through conceptually simple ingredients–the plane wave expansion and scattering matrix methods–that can be obtained through a variety of different techniques.With the IDM,we take advantage of the respective strengths of reciprocal and real space methods to model different waveguide regions.For the periodic parts of the device we use Bloch modes obtained from a plane wave expansion[16].The parts of the structure with de-viations from periodicity are simulated using a plane wave based scattering matrix approach described in Ref.[24].The photonic crystal Fresnel coefficients are used to link the two sim-ulation methods allowing very efficient modelling of structures with arbitrary geometries.In this paper,we demonstrate theflexibility of the IDM with several types of photonic crystal waveguides and a novel coupler design,at each step verifying its accuracy with comparisons to numerical simulations.2.Theory2.1.Bloch mode and scattering matrix interfaceOur method of simulating waveguides divides the devices into periodic cladding and aperiodic core regions connected through infinitesimally thin homogeneous material layers.Inside the photonic crystal claddings,fields are described by a superposition of Bloch modes that excite a series of diffracted plane waves inside the core-cladding interface layer.These plane waves propagate into the core and produce a set of reflected and transmitted waves whose amplitudes are related through a scattering matrix.In the following discussion,we employ a planar photonic crystal waveguide oriented as il-lustrated in Fig.1,with the dielectric slab parallel to the xy-plane and the waveguide extending along the x-direction.The vectorsˆx,ˆy,andˆz are the Cartesian unit vectors.The Bloch modes of the photonic crystal cladding are calculated using the plane wave expansion method introduced in Ref.[16].In this method,we specify the angular frequencyω,the lateral wave vector k0, , and the normal vectorˆn to a given interface to obtain a set of Bloch modes with these prop-erties and their corresponding complex wave vector components alongˆn.For a core-cladding interface parallel to the xz-plane,k0, =k0,xˆx+k0,zˆz,ˆn=ˆy,and the resulting complex wave vectors are k B±j=k0, +k B±j,yˆy,where±indicates the direction of propagation or decay of the #8231 - $15.00 USD Received 31 July 2005; revised 29 August 2005; accepted 30 August 2005 (C) 2005 OSA19 September 2005 / Vol. 13, No. 19 / OPTICS EXPRESS 7307Bloch mode alongˆy,j labels each of the modes at a given frequency,and k B±j,y are the complex wave vector components.Thus crystal modes calculated from this method provide a complex band structure composed of Bloch wave vectors with real and imaginary parts.Inside the crys-tal passbands,the band structure has some modes with purely real wave vectors corresponding to freely propagating Bloch modes and others with complex wave vector components charac-terizing the exponential decay rates of evanescent Bloch modes.Inside the photonic crystal stopbands,the band structure consists entirely of evanescent modes.We represent thefields inside the cladding with a superposition of these Bloch modes given by the following equation:E B(r)=∑j ∑αξBαj∑l,m,nE Bαjlmn expik Bαj+G lmn·r,(1)whereαis either+or−;G lmn are the reciprocal lattice vectors specified through indices l,m,and n;E Bαjlmn are the Fourier components of the Bloch modes;andξBαj are the amplitudecoefficients of the Bloch modes.Fig.1.Schematic illustration of the IDM viewing a planar triangular photonic crystal devicefrom above.The core and cladding areas are separated by thin interface layers.The dashedrectangles mark the simulation cells used for each device region.To model two-dimensionally patterned slab waveguides in our3D plane wave expansion, we simulate a3D unit cell with artificial periodicity normal to the slab plane[4].Despite the unphysical nature of this approach,extending the cell in the vertical direction can effectively eliminate the interaction of confined modes with neighbouring slabs because these modes de-cay exponentially above and below the slab.Although we do form a supercell in the vertical direction for these simulation cells,they are still much smaller than the supercells used in other methods,which are extended both laterally and vertically.For a planar photonic crystal with a square lattice of holes,we employ an extended unit cell of height h in the z-direction and of length a in the x-and y-directions.This crystal has a set of reciprocal lattice vectors given by:G lmn=l b2+m b1+n b3where b1=2πa−1ˆx,b2=2πa−1ˆy,and b3=2πh−1ˆz.At the core-cladding interface,the Bloch modes excite a set of diffracted waves in the homogeneous interface layer that are periodic over the interface plane:E h(r)=∑m,nE+mn exp(ik mn,y y)+E−mn exp(−ik mn,y y)expik0, +G mn,·r,(2)(C) 2005 OSA19 September 2005 / Vol. 13, No. 19 / OPTICS EXPRESS 7308 #8231 - $15.00 USD Received 31 July 2005; revised 29 August 2005; accepted 30 August 2005where G mn , =(G lmn ·ˆx )ˆx +(G lmn ·ˆz )ˆz =2πma −1ˆx +2πnh −1ˆz is the set of reciprocal lattice vec-tors projected onto the interface plane,r =x ˆx +z ˆz ,and k mn ,y =[(n h ω/c )2−|k 0, +G mn , |2]1/2in a homogeneous layer of index n h .The application of boundary conditions over the interface ensures that coupling occurs only between Bloch modes and plane waves with the same propagation constant in the core-cladding interface plane and yields the following set of equations for each diffraction order:∑j B +jmn ,x B −jmn ,x B +jmn ,z B −jmn ,z ξB +j ξB −j = E +mn ,x E +mn ,z + E −mn ,x E −mn ,z ,(3)∑jC +jmn ,x C −jmn ,x C +jmn ,z C −jmn ,z ξB +j ξB −j =1k mn ,y k x k z ω2−k 2x k 2z −ω2−k x k z E +mn ,x E +mn ,z − E −mn ,x E −mn ,z ,(4)where k x =k 0,x +G lmn ·ˆx =k 0,x +2πma −1and k z =k 0,z +G lmn ·ˆz =k 0,z +2πnh −1.The elements B ±jmn ,x /z and C ±jmn ,x /z on the left side of Eqs.(3)and (4)reflect the electric and magnetic field amplitudes of the crystal modes at the plane y =y 0in the unit cell and are defined:B ±jmn=∑l E B ±jlmn exp iG l ,⊥y 0 ,(5)C ±jmn =∑l (k B ±j +G lmn )×E B ±jlmn exp iG l ,⊥y 0 ,(6)where G l ,⊥=G lmn ·ˆy =2πla −1is the set of reciprocal lattice vectors projected onto ˆn .With column vectors E +B =(···,ξB +j ,ξB +j +1,···)T ,E −B =(···,ξB −j ,ξB −j +1,···)T ,E +=(···,E +mn ,x ,E +mn ,z ,···)T ,and E −=(···,E −mn ,x ,E −mn ,z ,···)T ,we can combine Eqs.(3)and (4)to form the transfer matrix T containing the diffraction coefficients required to compute the set of plane waves excited by an arbitrary combination of Bloch modes in the cladding:E +E − =T E +B E −B = T 11T 12T 21T 22 E +B E −B.(7)The scattering matrix for the interface,which describes the outgoing modes produced by an arbitrary set of incoming ones,can be readily derived from the elements of the transfer ma-trix [25,26].After calculating the transfer matrix describing the waveguide at the cladding to homoge-neous material interface,we can simulate the remaining core region of the device using the plane wave based scattering matrix method described in Ref.[24].In this approach,a dielec-tric structure with transverse periodicity is divided along the propagation direction into slices separated by infinitesimally thin homogeneous films.For the dielectric slices,we calculate the scattering matrices relating the diffracted plane waves excited in the two films surrounding each slice.Applying the usual scattering matrix recursion formulae [25,26]to each of the matrices yields the scattering matrix for the entire structure.The scattering matrix S for the waveguide determines the set of outgoing plane waves E −L and E +R from the core produced by an arbitrary set of waves E +L and E −R incident on the core:E +R E −L =S E +L E −R = S 11S 12S 21S 22 E +L E −R.(8)We can now determine the properties of the entire waveguide structure using the S -matrices and T -matrices describing the behaviour of light at the homogeneous boundaries of the core and cladding regions.(C) 2005 OSA19 September 2005 / Vol. 13, No. 19 / OPTICS EXPRESS 7309#8231 - $15.00 USD Received 31 July 2005; revised 29 August 2005; accepted 30 August 2005puting waveguide dispersion relationsResonant states reflecting confined waveguide modes exist when thefield profile of light insidethe core is unchanged following a round-trip from one edge of the core to the other.To deter-mine the round-trip change in thefield,we examine thefields at the core-cladding interface anddivide the propagation into two distinct phases.In thefirst phase,an incident set of plane-wavesE−L in one of the interface planes strikes the cladding producing a reflected set of waves E+L.Since the cladding is semi-infinite and the frequencies of interest are inside the the photoniccrystal’s stopband,any incident Bloch mode will have decayed to zero at the core-claddinginterface,hence E+B=0.This condition enables the incident and reflectedfields to be related simply through E+L=T12T−122E−L.In the second phase,thefirst reflected set of waves propa-gates through to the other side of core,reflects off the cladding,and propagates back throughthe core.The relationship between incident E+L and reflected E −L waves in this case is given byE −L=[S12+S11T12(T22−S21T12)−1S22]E+L.Applying the resonant state condition E −L=E−L yields the following:E−L=S12+S11T12(T22−S21T12)−1S22T12T−122E−L.(9)We can solve Eq.(9)as an eigenvalue problem noting that resonant states for the waveguideoccur when an eigenvalue of the system equals one.For waveguides that are symmetric about the centre plane of the core,guided modes canbe divided into even and odd classes with respect to the mirror plane normal to the slab.Forresonant states in this case,thefield profiles in the two core-cladding interfaces must satisfyE+R=±E−L and E+L=±E−R.Applying symmetry considerations to the scattering matrix and propagating the plane waves across to the other side of the core,we arrive at the followingguided mode condition:E−L=±1−S12T12T−122−1S11T12T−122E−L.(10)Eq.(10)can also be solved as an eigenvalue problem with even and odd guided modes obtained for eigenvalues equal to+1and−1,respectively.To implement the eigenvalue equations above,we obtain the T-matrices governing the reflec-tion from the claddings and the S-matrices describing propagation through the core at a given k0, and a number of frequency points inside the stopband.These matrices have no variable elements and thus Eqs.(9)and(10)can be solved using standard computational techniques. After calculating eigenvalues over a series of frequencies,we can interpolate their phase and magnitude tofind the resonant states of the system at a veryfine frequency resolution.In prac-tice,the matrices in Eqs.(9)and(10)are well-conditioned and their dimensions are not large, with several hundred elements in3D simulations and under100elements in2D,enabling ex-act eigenvalues to be obtained in seconds.The eigenvalues from Eq.(9)have magnitudes that typically vary little over the stopband while those of Eq.(10)tend to vary rapidly.Both sets of eigenvalues usually have phases that vary smoothly over the stopband.As a result,we prefer to employ Eq.(9)for our simulations since interpolation is simpler and faster,and use Eq.(10)to gain general information about the symmetry of the modes.It is also possible to directly combine the S-and T-matrices defined in subsection2.1to com-pute dispersion relations.In this approach,we determine the transmission through the cladding-core-cladding structure in the direction normal to the waveguide.This method,however,proves to be inefficient since Bloch modes and scattering matrices at many frequencies are required to discern the very abrupt peaks in transmission that mark resonant states.(C) 2005 OSA19 September 2005 / Vol. 13, No. 19 / OPTICS EXPRESS 7310 #8231 - $15.00 USD Received 31 July 2005; revised 29 August 2005; accepted 30 August 20052.3.Core and cladding modificationsOnce the scattering and transfer matrices for different core and cladding regions are obtained,waveguide elements can be combined arbitrarily to yield new designs.The scattering matrices for core regions consisting of several rows of defects can be formed from those of a single row defect using the scattering matrix recursion formulae [25,26].Another degree of freedom can be achieved by displacing the cladding and core elements along the waveguide propagation direction.For core region unit cells,the translation is performed by introducing a phase shift into the incoming and outgoing plane wave coefficients to compensate for the relative positionsof neighbouring unit cells.For a translation r 0, =x 0ˆx +z 0ˆz in the xz -plane,the shifted scattering matrix S is related to the original matrix S through:S = e −i G ·r 0, 00e −i G ·r 0, S e +i G ·r 0, 00e +i G ·r 0,,(11)where e ±i G ·r 0, is a diagonal matrix with diagonal elements exp (±i G mn , ·r 0, ).Similarly,translations of the cladding unit cells are accomplished through the following operation:T = e +i G ·r 0, 00e +i G ·r 0,T ,(12)where T and T are the initial and shifted matrices,respectively.3.ResultsIn this section,we apply the IDM to a variety of different photonic crystal waveguide designs.The bulk crystal in each of these waveguides consists of a triangular lattice of air holes etched in a high index slab.In our first example,we determine the response of a full 3D planar photonic crystal waveguide with a defect row of air holes.In the subsequent examples,we focus on 2D waveguides to facilitate comparison with other methods.3.1.3D slab waveguideThe properties of photonic crystal waveguides can be tuned using different air hole defects inside the core.In the waveguide we study here,the bulk crystal consists of holes of radius 0.29a ,where a is the lattice constant,etched into a dielectric membrane of thickness 0.6a and index 3.4.This particular crystal structure has been successfully fabricated and used in waveguides [27]and high-quality factor cavities [28,29].It possesses a band gap ranging from 0.261c /a to 0.331c /a for even modes with respect to the in-slab mirror plane.The waveguide core is formed by reducing the radii of a row of holes to 0.2a ,establishing a line defect capable of guiding light (Fig.2(a)).To determine the properties of the waveguide,we obtain the Bloch modes and scattering matrices for its unit cell components.The bulk crystal Bloch modes are simulated using a computational cell of height 4a and length √3a with orthog-onal axes (Fig.1)and an expansion of 1575plane waves.The resulting eigenvalue equation is solved using an implementation of the implicitly restarted Arnoldi method (IRAM)[30]tuned to find the Bloch modes with the slowest decay rates.The matrices in these computations are well-conditioned and generally require fewer than 20IRAM iterations to obtain Bloch modes converged to machine precision.The core region scattering matrices are obtained from a cell of the same height but of length √3/2a with an expansion of 128diffracted waves.To compute the dispersion relation (Fig.2(b)),we form the transfer matrix using seven to ten evanescent Bloch modes and employ Eq.(9)to find the resonant states.In practice,it is rare to find resonant states where an eigenvalue is identically equal to one.Instead we employ a (C) 2005 OSA19 September 2005 / Vol. 13, No. 19 / OPTICS EXPRESS 7311#8231 - $15.00 USD Received 31 July 2005; revised 29 August 2005; accepted 30 August 2005。
Ultrabroadbandmu...
Ultrabroadbandmu...Ultrabroadband multiplex CARSmicrospectroscopy and imaging usinga subnanosecond supercontinuum light sourcein the deep near infraredMasanari Okuno,1Hideaki Kano,1,2Philippe Leproux,3Vincent Couderc,3and Hiro-o Hamaguchi1,* 1Department of Chemistry,School of Science,The University of Tokyo,Hongo7-3-1,Bunkyo,Tokyo,113-0033,Japan2Precursory Research for Embryonic Science and Technology(PRESTO),Japan Science and Technology Agency(JST), Honcho4-1-8,Kawaguchi-shi,Saitama332-0012,Japan3Institut de Recherche XLIM,UMR CNRS No.6172,123avenue Albert Thomas,87060Limoges CEDEX,France*Correspondingauthor:************.u-tokyo.ac.jpReceived January15,2008;revised March7,2008;accepted March8,2008;posted March25,2008(Doc.ID91766);published April22,2008 Subnanosecond supercontinuum(SC)has been generated by a1064nm microchip laser combined with a photonic crystal?ber.The ultrabroadband??2000cm?1?SC has facilitated multiplex coherent anti-Stokes Raman scattering(CARS)microspectroscopy in the spectral range from1000to3000cm?1with lateral and depth spatial resolution of0.9and4.6?m,respectively.A clear CARS image of a Nicotiana tabacum L.cv.Bright Yellow2cell has been obtained with high vibrational contrast.?2008Optical Society of America OCIScodes:180.4315,180.5655,300.6230,060.5295,190.4370.Real-time in vivo pursuit of chemical processes in a living cell is one of the most attractive frontiers be-tween molecular and life sciences.For elucidating the dynamical behaviors of molecules in these processes, various kinds of microscopies have been developed [1–4].Among them,coherent anti-Stokes Raman scattering(CARS)microscopy attracts much atten-tion,allowing us to investigate a living cell without staining by dyes.CARS microscopy[1,5],which uses two laser beams in a Raman resonance at one par-ticular wavenumber for making an image,cannot distinguish a vibrationally resonant CARS signal from a nonresonant background.Thus,multiplex CARS microspectroscopy,which can easily discrimi-nate these signals by detecting sharp vibrational resonances in the spectral pro?le,has been devel-oped.Recently,supercontinuum(SC)generated by photonic crystal?bers(PCFs)[6]has signi?cantly broadened the spectral coverage of multiplex CARS microspectroscopy[7–10].Using a SC light source, we have demonstrated ultrabroadband multiplex CARS microspectroscopy that provides molecular spectroscopic images with high ef?ciency and with high speed[11].In the past few years,SC generation has been re-alized by a combination of a PCF with a subnanosec-ond microchiplaser[12–15].This technique provides a low-cost,compact,ultrabroadband,and phase-coherent white light source.In a recent study[16], we have developed an ultrabroadband multiplex CARS spectroscopic system using the SC generated from the PCF by seeding both532and1064nm sub-nanosecond laser pulses and demonstrated multiplex CARS measurements of several molecular liquids in the spectral range of?2000cm?1.In the present study,we have extended our study to ultrabroadband multiplex CARS microspectroscopy in the deep near-infrared(NIR)with the scope of application to living cells and other biological systems.The deep NIR CARS excitation minimizes the photodamage to bio-logicalsamples.Furthermore,the deep NIR light has larger penetrating depth than the visible,because it is less absorbed and/or scattered by biological media. We have successfully obtained CARS spectra and im-ages of biological samples in the C–H stretch region by using the pump and Stokes laser radiations whose wavelengths are longer than1?m.To the best of our knowledge,ultrabroadband??2000cm?1?multiplex CARS measurement in the deep NIR has been per-formed for the?rst time in the present study.Figure1(a)shows a schematic of the constructed NIR ultrabroadband multiplex CARS microspectrom-eter.A Q-switched Nd:YAG microchip laser(JDS Uni-phase,NP-10820-GM1;1064nm wavelength,?1cm?1spectral bandwidth,?1ns pulse duration, 8?J pulse energy,and 6.6kHz repetition rate)is used as the light source.The fundamental output of the laser is divided into two by a beam splitter.Ap-proximately10%of the output is used for the pump radiation of the CARS process?? 1?.The remaining 90%of the output is used for generating the NIR SC in the PCF.The SC is used for the Stokes radiation ??2?of the CARS process.The pulse energies for the pump and the spectrally?ltered ultrabroadband Stokes lasers are approximately800and150nJ,re-spectively.The two laser pulses are superimposed collinearly,and tightly focused onto the sample with a40?0.9NA microscope objective.The CARS signal in the forward detection is collected with another mi-croscope40?0.6NA objective.After passing through two short-wavelength-pass?lters,the CARS signal is coupled into an optical?ber.The CARS signal is dis-persed by a spectrometer(Acton,SpectraPro-300i) and is detected by a CCDdetector(Roper Scienti?c, May1,2008/Vol.33,No.9/OPTICS LETTERS9230146-9592/08/090923-3/$15.00?2008Optical Society of AmericaPIXIS-100B).Since the narrowband subnanosecond laser pulse is used for the ?1laser in the CARS pro-cess,the spectral resolution is determined not by the laser pulse but by the spectrometer.The sample is scanned by a piezostage (Madcity,Nano-LP-100)for the CARS mapping experiment.The lateral spatial resolution is estimated to be 0.9±0.1?m from the signal intensity pro?le at the edge of a polyethylene ?lm.From the rise of the signal at the air–?lm inter-face,the depth resolution is estimated to be 4.6±0.3?m.Figure 1(b)shows a typical spectral pro?le of the SC in the NIR region.It is measured by an InGaAs spectrometer (Ocean Optics,NIR 512).As shown in Fig.1(b),we obtain ultrabroadband continuum rang-ing from 1100to 1700nm with a highly complicated spectral pro?le.To correct the distorted spectral pro-?le of the CARS signal,the nonresonant background has been used.Figure 2(a)shows an intensity-corrected deep NIR multiplex CARS spectrum of a polystyrene bead.The diameter of the bead is 3?m.The exposure time is 1s.It is clear that the CARS signal is obtained in the spectral coverage of ?2000cm ?1.As shown in Fig.2(a),several peaks are observed owing to multipleRaman resonances.Figure 2(b)shows a detailed spectral pro?le of the CARS signal from 900to 1700cm ?1.It is clear that many vibrational reso-nances are observed in the ?ngerprint region.All the observed bands show dispersive line shapes owing to the interference with nonresonant background.It should be emphasized that simultaneous measure-ment of the CARS signal has been performed in the spectral range between 1000and 3000cm ?1without changing the delay time between the pump and the Stokes pulses.It means that group-delay dispersion is not critical for the CARS process using the sub-nanosecond laser pulses in comparison with the fem-tosecond or picosecond SC.Figures 2(c)–2(e)show three CARS images of a polystyrene bead with diam-eter of 3?m at three different Raman shifts:992,1572and 1900cm ?1,respectively.The exposure time at each point is 100ms.As shown in Figs.2(c)and 2(d),clear vibrationally resonant CARS images are observed at 992and 1572cm ?1.On the other hand,no clear vibrational contrast is obtained at 1900cm ?1,at which only a nonresonant background signal is observed.It is clear that Figs.2(c)and 2(d)have high vibrational contrast in comparison with Fig.2(e).Figure 3(a)shows a typical CARS spectrum from Nicotiana tabacum L.cv.Bright Yellow 2(BY2)cells.In theexperiment,BY2cells are spread in water on a slide glass and sandwiched with a cover glass.All measurements are performed at room temperature.The CARS spectrum is obtained at the nucleus.In the present experimental condition,novibrationallyFig.1.(Color online)(a)Experimental setup of the sub-nanosecond multiplex CARS microspectroscopy:WP ,half-wave-plate;BS,beam splitter;LF,long-wavelength-pass ?lter;EF,1064nm edge ?lter;SP ,short-wavelength-pass ?lter.(b)Typical spectral pro?le of the subnanosecond NIR supercontinuum for ?2of the CARS process.The inset is the photograph of the photonic crystal ?ber changing its color gradually from blue to orange by the propagation of thesupercontinuum.Fig.2.Intensity-corrected multiplex CARS spectra of a polystyrene bead in (a)500–4000cm ?1and in (b)?nger-print region.CARS images of a polystyrene bead with di-ameter of 3?m at the Raman shifts of (c)992,(d)1572,and (e)1900cm ?1. 924OPTICS LETTERS /Vol.33,No.9/May 1,2008resonant CARS signals are clearly observed in the ?ngerprint region.The signal in the ?ngerprint re-gion is probably so weak that they are overwhelmed by nonresonant background and/or other CARS pro-cesses [17].Figure 3(b)shows a CARS image at the Raman shift of 2902cm ?1owing to the C–H stretch mode.The exposure time for each pixel is 300ms.Al-though the signal is dominated by nonresonant back-ground,we can improve the vibrational contrast by the spectral band shape analysis [18].In Fig.3(b),we have mapped the intensity differences between the positive (averaged from 2860to 2870cm ? 1)and nega-tive (averaged from 2960to 2970cm ?1)peaks of the dispersive shape of the CH stretch CARS band.It is emphasized that this procedure cannot be performed with a single-wavenumber detection in CARS micros-copy.As shown inFig.3(b),BY2cells are clearly vi-sualized with a high vibrational contrast.Inside of the BY2cell,strong CARS signals are observed at cell walls and in the nucleus.Cytoplasm is also visu-alized by the CARS signal with moderate intensity.At the positions of the vacuoles,the CARS signal is only weakly found.In conclusion,we have applied the subnanosecond SC generated from a PCF and a 1064nm microchip laser to deep NIR multiplex CARS microspectroscopy.Multiplex CARS spectra and CARS images are ob-tained for a polystyrene bead and BY2cells with the narrowband pump laser ??1cm ?1?and with ultra-broadband spectral coverage ??2000cm ?1?.The CARS image of BY2cells clearly visualizes the intra-cellular structures of BY2cells such as nuclei andcell walls.Owing to the narrow spectral width of the pump laser,high resolution ??1cm ?1?measurements become feasible by using a large dispersion spectrom-eter.The data acquisition speed will be drastically improved by using a laser source with a higher rep-etition rate and higher pulse energies and a multi-mode doped ?ber,by which the spectral power den-sity of SC is considerably increased.The authors gratefully acknowledge /doc/87faf4eb9e314332396893ac.html on,HORIBA,Ltd.,for facilitating a fruitful collaboration between Japanese and French laboratories.This work is supported by a Grant-in-Aid for Creative Sci-ence Research (15GS0204)from Ministry of Educa-tion,Culture,Sports,Science,and Technology (MEXT).H.Kano gratefully acknowledges ?nancial support by the PRESTO program of Japan Science and Technology Agency,Grant-in-Aid for Scienti?c Research on Priority Areas [477]from MEXT,and the Global COE Program for “Chemistry Innovation.”The authors thank R.Okamitsu for her help in sample preparation and T.Shimizu and T.Nagata for supplying us the BY2cells.References1.J.-X.Cheng,A.Volkmer,L.D.Book,and X.S.Xie,J.Phys.Chem.B 106,8493(2002).2.P .J.Campagnola,M.Wei,A.Lewis,and L.M.Loew,Biophys.J.77,3331(1999).3.W.Denk,J.H.Strichler,and W.W.Webb,Science 248,73(1990).4.J.G.White,W.B.Amos,and M.Fordham,J.Cell Biol.105,41(1987).5.M.Hashimoto,T.Araki,and S.Kawata,Opt.Lett.24,1768(2000).6.P .Russell,Science 299,358(2003).7.T.W.Kee and M.T.Cicerone,Opt.Lett.29,2701(2004).8.H.N.Paulsen,K.M.Hilligsoe,J.Thogersen,S.R.Keiding,and /doc/87faf4eb9e314332396893ac.html rsen,Opt.Lett.28,1123(2003).9.G.I.Petrov and V .V .Yakovlev,Opt.Express 13,1299(2005).10.V .P .Mitrokhin, A. B.Fedotov, A. A.Ivanov,M.V .Al?mov,and A.M.Zheltikov,Opt.Lett.32,3471(2007).11.H.Kano and H.Hamaguchi,Anal.Chem.79,8967(2007).12.L.Provino,J.M.Dudley,H.Maillotte,N.Grossard,R.A.Windeler,andB.J.Eggleton,Electron.Lett.37,558(2001).13.P .-A.Champert,V .Couderc,P .Leproux,S.Frevrier,V .Tombelaine,/doc/87faf4eb9e314332396893ac.html bonte,P .Roy, C.Foehly,and P .Nerin,Opt.Express 12,4366(2004).14.V .Tombelaine,C.Lesvigne,P .Leproux,L.Grossard,V .Courdec,J.-L.Auguste,J.-M.Blondy,G.Huss,and P .-H.Pioger,Opt.Express 13,7399(2005).15.W.J.Wadswprth,N.Joly,J.C.Knight,T.A.Birks,F.Biancalana,and P .St.J.Russell,Opt.Express 12,299(2004).16.M.Okuno,H.Kano,P .Leproux,V .Conderc,and H.Hamaguchi,Opt.Lett.32,3050(2007).17.Y.J.Lee,Y.Liu,and T.M.Cicerone,Opt.Lett.32,3370(2007).18.H.Kano and H.Hamaguchi,Opt.Express 13,1322(2005).Fig. 3.(Color online)(a)Intensity-corrected multiplex CARS spectrum of BY2cells.(b)CARS image of BY2cells at a Raman shift at approximately 2900cm ?1.May 1,2008/Vol.33,No.9/OPTICS LETTERS 925。
最新武汉理工大学光纤通信复习题全
复习题题库1.Make a choice(共十题每题1分)10p(1).Which of the following dispersion dose not exist in single-mode optical fiber? (D )(2).The unit of the fiber attenuation coefficient is (C)(3).the bands of Optical fiber communication is (B)(4).If the optical input power of a Optical amplifier is 10mW,and the optical output power is 100mW as well ,then its output gain level is (A)(5)In order to make sure of the system BER conditions , if the minimum optical input power of the receiver is 1 uW, the sensitivity of the receiver must be(6)The principal light sources used for fiber optical communications applications are :(7)laser action is the result of three key process,which one of the following is not be included?(8) A single mode fiber usually has a core diameter of(9)To make sure that the APD photo-detector works properly, a sufficiently is applied across the p-n junction.(10) When DFA fiber amplifier uses as light Repeaters, its main effect isA. amplifying and regenerating the signal(11) In graded-index optical fiber, the numerical aperture NA can be expressed as(12) In practical SMFs, the core diameter is just below the cutoff of the first higher-order mode; that is, for V slightly(13) It is well known that the total dispersion in the single-mode regime is composed of two components:(14) At present, erbium doped fiber amplifier’s maximum small signal gain is aroundA. 40 dB(15) Which of the following doesn’t belong to passive optical components(16) The mode has no cut off and ceases to exist only when the core diameter is zero.A. HE11(17)When the phase difference is an integral multiple of A, the two modes will beat and the inputpolarization state will be reproduced.(18)which one of the following mode can transmit in the single-mode optical fiber ?(A)A.HE11(19)Light attenuation in an optical fiber is caused by ( B )(20)Which of the following will reduce the attenuation of fiber-optic cable assembly?(21)Increasing a fiber’s length can(22)What is the least important characteristic of a fiber-optic light source?(23)Which of the following codes cannot be transmitted in fibers?(24)Dispersion-shifted fiber (DSF) is a type of single-mode fiber designed to have zero dispersion near ___nm.(25) In graded-index optical fiber, the numerical aperture NA can be expressed as2. Write the full name of the following acronym(1)OTDM: optical time-division multiplexing(2)DTM: Dynamic Synchronous Transfer Mode(3)DWDM: Dense wavelength division multiplexing(4)DFF: Dispersiion-flattened fiber(5)AWF: All wave fiber(6)EPON: Ethernet Passive Optical Network(7)ARQ: automatic reapt request(8)SDH: Synchronous digital hierarchy(9)SONET: synchronous optical network(10)TDMA: time-division multiple access(11)ISDN: integrated services digital network(12)FDM: frequency-division multiplexing(13)SIOF: step index optical fiber(14)ATM: asynchronous transfer mode(15)SOA: Semiconductor optical amplifier(16)APD: Avalanche Photo Diode(17)WDM: wavelength-division multiplexing(18)PCM: pulse-code modulation(19)NRZ: nonreturn-to-zero(20)DSF: dispersion shift fiber(21)TLLM: transmission-line laser model(22)ONSL: optical network simulation layer(23)OVPO: outside vapor-phase oxidation(24)V AD: vapor-phase axial deposition(25)MCVD: modified chemical vapor deposition(26)EDFA: erbium-doped fiber amplifier(27)FDDI: fiber distributed data interface(28)GIOF: graded index optical fiber(29)SQW: single quantum-well(30)FEC: forward error correction(1) The transmission distance of any fiber-optic communication system is inherently limited by ?(2) The role of the optical transmitter is to convert the ( ) into the corresponding (optical signal) and then launch it into the ( ) serving as a communication channel.(3) The LED structures being used for fiber optics can be classified as ( ) or ( ).(4)The two basic LED configurations being used for fiber optics are ( ) and( ).(5) The three main components of the optical transmitter are ( ), ( ), ( ).(6) The role of the optical receiver is to convert the ( ) back into ( ) and recover the data transmitted through the ( ).(7) The design of the front end of receiver requires a trade-off between ( ) and ( ).(8) The two fundamental noise mechanisms responsible for current fluctuations in all optical receivers are the ( ) and ( ).(9) From an architectural standpoint, fiber-optic communication systems can be classified intothree broad categories-point-to-point links, ( ), and ( ).(10) Optical amplifiers are often cascaded to overcome ( ) in a long-haul lightwave system.(11) A fiber Bragg grating acts as an optical filter because of the existence of a ( ), the frequency region in which most of the incident light is reflected back.(12) The electromagnetic energy of a guided mode is carried partly in the ( ) and partly in the ( ).(13)The basic attenuation mechanisms in a fiber are ( ), ( ) and ( ) of the optical waveguide.(14) The two main optical amplifier types can be classified as ( ) and ( ).(15) The two most common samples of these spontaneous fluctuations are ( ) and ( ).(16)According to the refractive index of the core, the fiber can be divided into ( ) fiber and ( ) fiber .(17)The total dispersion in single-mode fibers consists mainly of(18) The most meaningful criterion for measuring the performance of a digital communication system is the(19) The simplest transmission link is a.(20)Absorption is related to the fiber material, whereas scattering is associated both with the (fiber material) and with (structural imperfections) in the optical waveguide.4. Give a brief description of following terms and questions(共5题每题3分)15p (1) Please write three main factors that influence the sensitivity of the optical receiver.1) Noise: shot noise and thermal noise2) Extinction Ratio3) Fiber dispersion(2) Briefly describe there major goals of SDH.1) Avoid the problems of PDH2) Achieve higher bit rates3) Better means for operation, administration and Maintenance(3) List at least three advantages of optical fiber in fiber communication.1) Wide bandwidth2) Anti-interference3) Low loss4) Large capacity(4) List at least three advantages of SOA.1) Small size, and easy to be integrated with semiconductor circuits.2) Fabrication is simple and with low power consumption, long life-span and low cost.3) Gain response is very quick and well suited for switching and signal processing in optical networks application.4) Can amplify optical signal and process signal in the same time such as switch, so can be used in wavelength converting and optical switch.(5) List more than three disadvantages of SOA.1) The coupling loss with optical fiber is too large2) Sensitive to polarization3) Noise figure is high(~8 dB)4) crosstalk5) Easy to be affected by temperature, low stability(6)BERBit-Error rate, defined as the probability of incorrect identification of a bit by the decision circuit of the receiver.(7) What conditions should be met to achieve a high signal-to-noise ratio?1) The photodetector must have a high quantum efficiency to generate a large signal power.2) The photodetector and amplifier noises should be kept as low as possible.(8) Please write the three basic categories of degradation of light sources1) internal damage2) ohmic contact degradation3) damage to the facets of laser diodes(9)List the three factors largely determining the frequency response of an LED1) the doping level in the active region2) the injected carrier lifetime Ti in the recombination region3) the parasitic capacitance of the LED.(10) Please write the three different mechanisms causing absorption briefly1) Absorption by atomic defects in the glass composition.2) Extrinsic absorption by impurity atoms in the glass material.3) Intrinsic absorption by the basic constituent atoms of the fiber material.(11) The disadvantage of Raman amplifierNeed large output power pump laser. As Raman Scattering, the energy is transferred from high frequency to low frequency. Cross talk will affect signal.(12) Dynamic RangeSystem dynamic range is the maximum optical power range to which any detector must be able to respond.(13) List at least three advantages of fiber amplifiers in fiber communication1) low insertion loss2) large bandwidth3) low noise4) low crosstalk5) high gain(14) List at least three factors of attenuation in fiber communication1)material absorption2)Rayleigh scattering3)mie scattering4)connection losses5. Figure(共1题每题5分)5p(1)Please draw the basic step for an automatic-repeat-request (ARQ) error-correction scheme. Solution:(2)Please draw out the basic elements of the optical receiver.(5p)Solution:(3)Please draw out the basic elements of an analog link and the major noise contributions. Solution: 光光光光光光光光光光光光光光光光光光光RIN光光光光光光光光光光光光光光GVD光光光光ASE 光光光光光光光光光光光光光光光光光光APD 光光光光光光光光光光RF 光光光(3) consider the encoder shown in Fig.1that changes NRZ data into a PSK ing this encoder,draw the NRZ and PSK waveforms for the data sequence 0001011101001101.clock /2PSK dataNRZ datafrequency Afrequency BFig.1Solution:6. Calculation Problems(共3-4题,统计40分) 40p(1) A wave is specified by 8cos 2(20.8)y t z π=-,where y is expressed in micrometers and the propagation constant is given in 1m μ-.Find (a) the amplitude,(b) the wavelength,(c) the angular frequency, and (d) the displacement at time 0t = and 4z m μ=.Solution:The general form is:y = (amplitude) cos()cos[2(/)]t kz A vt z ωπλ-=-.Therefore(a) amplitude 8m μ=(b) wavelength: 11/0.8m λμ-= so that 1.25m λμ=(c) 22(2)4v ωπππ===(d) At 0t = and 4z m μ= we have18cos[2(0.8)(4)]8cos[2( 3.2)] 2.472y m m πμμπ-=-=-=(2) A certain optical fiber has an attenuation of 0.6dB/km at 1300nm and 0.3dB/km at 1550nm.Suppose the following two optical signals are launched simultaneously into the fiber: an optical power of 150W μ at 1300nm and an optical power of 100W μ at 1550nm. What are the Solution:power levels in W μof these two signals at (a) 8km and (b) 20km?Since the attenuations are given in dB/km, first find the power levels in dBm for100W μ and 150W μ. These are, respectively,P(100W μ) = 10 log (100 W μ/1.0 mW) = 10 log (0.10) = - 10.0 dBmP(150W μ) = 10 log (150 W μ/1.0 mW) = 10 log (0.15) = - 8.24 dBm(a) At 8 km we have the following power levels:P 1300(8 km) = - 8.2 dBm – (0.6 dB/km)(8 km) = - 13.0 dBm = 50W μP 1550(8 km) = - 10.0 dBm – (0.3 dB/km)(8 km) = - 12.4 dBm = 57.5W μ(b) At 20 km we have the following power levels:P 1300(20 km) = - 8.2 dBm – (0.6 dB/km)(20 km) = - 20.2 dBm = 9.55W μP 1550(20 km) = - 10.0 dBm – (0.3 dB/km)(20 km) = - 16.0 dBm = 25.1W μ(3) A double-heterojunction InGaAsP LED emitting at a peak wavelength of 1310nm has radiative and nonradiative recombination times of 25 and 90ns, respectively. The drive current is 35mA. (a) Find the internal quantum efficiency and the internal power level.(b) If the refractive index of the light source material is n=3.5, find the power emitted from the device.Solution: (a) From Eq. int 11/r nr rτητττ==+, the internal quantum efficiency is int 10.783125/90η==+, and from Eq.int intint I hcI p hv q q ηηλ== the internal power level is int (35)(0.783)26(1310)hc mA p mW q nm == (b) From Eq.int e int 2p (1)n t p P n n η==+, 21260.373.5(3.51)P mW mW ==+ (4) An LED with a circular emitting area of radius 20m μ has a lambertian emission pattern witha 1002()W cm sr •axial radiance at a 100mA drive current. How much optical power can becoupled into a step-index fiber having a 100m μ core diameter and NA=0.22? How much optical power can be coupled from this source into a 50m μ core-diameter graded-index fiber having 12.0, 1.48n α== and 0.01∆=?Solution:The source radius is less than the fiber radius,so Eq. 222222,1()2LED step s o s o P r B NA r B n ππ==∆ holds:22223222,()(210)(100/)(0.22)191LED step s o P r B NA cm W cm W ππμ-==⨯= From Eq. 222,122[1()]2s LED graded s o r P r B n απαα=∆-+ 232222,122(210)(100/)(1.48)(0.01)[1()]15925LED graded P cm W cm W πμ-=⨯-=(5)Suppose an avalanche photodiode has the following parameters: 1/231,1,0.85,,10L D L I nA I nA F M R η=====Ω, and 1B kHz =.Consider a sinusoidally varying 850nm signal, which has a modulation index m=0.85 and an average power level 050P dBm =-, to fall on the detector at room temperature. At what value of M does the maximum signal-to-noise ratio occur?Solution: Using Eq.2222()()24/p P D L B Li M S N q I I M F M B qI B k TB R <>=+++ we have 22005/2001()22()24/D L B LR P m M S N qB R P I M qI B k TB R =+++ 162235/2191.215102.17610 1.65610M M ---⨯=⨯+⨯ The value of M for maximum S/N is found from Eq.224/()x L B L optP D qI k T R M xq I I ++=+, with x = 0.5: Moptimum = 62.1.(6)An LED operating at 1300 nm injects 25W μ of optical power into a fiber. If the attenuation between the LED and the photodetector is 40 dB and the photodetector quantum efficiency is 0.65, what is the probability that fewer than 5 electronhole pairs will be generated at the detector in a 1-ns interval ?Solution: From ⎰==τηη0)(hvN hv E dt t P ,the average number of electron-hole pairs generated in a time t is 6.10)/103)(106256.6()103.1)(101)(1025(65.0/8346910=⨯⨯⨯⨯⨯===----s m Js m s W hc Pt h E N ληνη Then,from Eq.(7-2)%505.0120133822!5)6.10(!)(6.106.105=====---e e n e N n P N n(7) An engineer has the following components available:(a) GaAlAs laser diode operating at 850 nm and capable of coupling 1 mW (0 dBm) into a fiber. (b) Ten sections of cable each of which is 500 m long, as a 4-dB/km attenuation, and hasconnectors on both ends.(c) Connector loss of 2dB/connector.(d) A pin photodiode receiver.(e) An avalanche photodiode receiver.Using these components, the engineer wishes to construct a 5-km link operating at 20 Mb/s. If the sensitivities of the pin and APD receivers are -45 and -56 dBm, respectively, which receiver should be used if a 6-dB system operating margin is required?Solution:(a)Use margin 2system L l P P P f C R S T ++=-=α,to analyze the link power budget.(a) For the pin photodiode,with 11 jointsdB L km dB dB dBm dBm insystemm L l P P P f C R S T 6)/4()2(11)45(0arg )(11++=--=++=-=αWhich gives L=4.25km. the teansmission distance cannot be met with these components. (b)For the APDdB L km dB dB dBm dBm 6)/4()2(11)56(0++=--Which gives L=7.0km. the transmission distance can be met with these components.(8) Suppose we want to frequency-division multiplex 60 FM signals. If 30 of these signals have a per-channel modulation index i m =3 percent and the other 30 signals have i m =4 percent, find the optical modulation index of the laser.Solution:The total optical modulation index is%4.27])04(.30)03(.30[][2/1222/12=+==∑ii m m(9) An optical transmission system is constrained to have 500-GHz channel spacings. How many wavelength channels can be utilized in the 1536-to-1556-nm spectral band?Solution: In terms of wavelength,at acentral wavelength of 1546nm a 500-GHz channel spacing isnm s sm nm f c 410500/103)1546(19822=⨯⨯=∆=∆-λλThe number of wavelength channels fitting into the 1536-to-1556 spectral band then is 54/)15361556(=-=nm nm N(10) The output saturation power sat out P , is defined as the amplifier output power for which the amplifier gain G is reduced by 3 dB (a factor of 2) from its unsaturated value 0G . Assuming 0G >>1, show that in terms of the amplifier saturation power sat amp P ,, the output saturation power issat amp sat out P G G P ,00,)1(2ln -=Solution: Let 2/0G G = and 0,/22/G P P P sat out out in ==.then Eq.(11-15) yields2ln 212,,00satout sat amp P P G G += Solving for sat out P , and with 10>>G ,we havesat amp sat amp sat amp sat out P P P G G P ,..00,693.0)2(ln 22ln =≈-=选择题、填空题、问答题、计算题题库一 Make a choice1) In graded-index optical fiber, the numerical aperture NA can be expressed as C.A. 21n n -B. ∆2aC. ∆2n 1D. 21n n a -2) In practical SMFs, the core diameter is just below the cutoff of the first higher-order mode; that is, for V slightly A.A. <2.4B. > 2.4C. =3D. =3.53) When the phase difference is an integral multiple of _2π_, the two modes will beat and the input polarization state will be reproduced.A. 2πB. πC. 1800D. π/24) It is well known that the total dispersion in the single-mode regime is composed of two components: C.A. mode-partition noise, inter- symbol InterferenceB. frequency chirp , modal dispersionC. material dispersion , waveguide dispersionD. modal dispersion , waveguide dispersionA. CMIB. HDB3C. 5B6BD. 8B1H6) Dispersion-shifted fiber (DSF) is a type of single-mode fiber designed to have zero dispersion near A nm.A. 1550B. 850C. 1310D. 1510 7) To make sure that the APD photo detector works properly, a sufficiently D is applied across the p-n junction.A. high forward-bias voltageB. low forward-bias voltageC. low reverse-bias voltageD. high reverse-bias voltage8) A single mode fiber usually has a core diameter of A.A. 10mB. 62.5nmC. 125nmD. 50mm3) According to whether there is electric or magnetic field in the direction of propagation or not, transverse modes of light waves are classified into different types: TEM modes, TE modes, TM modes and hybrid modes.4) Transmission of information in an optical format is carried out not by frequency modulation of the carrier, but by varying the intensity of the optical power.5) Largely due to attenuation and dispersion, the optical signals undergo waveform distortion and decreased amplitude.6) Material dispersion occurs because the index of refraction varies as a function of the optical wavelength.7)ZDSF is a dispersion shifted single mode fiber that has the zero dispersion wavelength nearthe 1550 nm window, but outside the window actually used to transmit signals.12)BER (The bit error rate) performance and jitter are two important indicators in a opticaldigital communication system.17)If the input pulse excites both polarization components, it becomes broader as the twocomponents disperse along the fiber because of their different group velocities. This phenomenon is called the PMD.22)Intramodal dispersion is a result of the group velocity being a function of the wavelength.29)From the point of view of the wave theory, light wave could be described as anelectromagnetic wave.30)Intermodal dispersion is a result of each mode having a different value of the group velocityat a single frequency.1) Draw the element block of a Distributed forward Raman amplifier3) Draw a block diagram of a typical optical digital communication system and briefly describe the functions of each part.An optical communication system consists of a transmitter, which encodes a message into an optical signal, a channel, which carries the signal to its destination, and a receiver, which reproduces the message from the received optical signal. The optical repeater is to extend the transmission distance of optical signal.4) Draw the element diagram of the application of optical amplifier.四 简答题1) Dispersion: Any phenomenon in which the velocity of propagation of any electromagnetic wave is wavelength dependent.2) Stimulated EmissionsIf a photon of energy hv 12 impinges on the system while the electron is still in its excited state, the electron is immediately stimulated to drop to the ground state and give off a photon of energy hv 12.3) There are 3 dispersion types in the optical fibers in general:1- Material Dispersion2- Waveguide Dispersion3- Polarization-Mode Dispersion4) Polarization mode dispersion (PMD) is due to slightly different velocity for each polarization mode because of the lack of perfectly symmetric & anisotropic of the fiber5) Laser is an optical oscillator. It comprises a resonant optical amplifier whose output is fed back into its input with matching phase. Any oscillator contains:1. An amplifier with a gain-saturated mechanism Optical transmitter Repeater Opticalreceiverfiber fiber2. A feedback system3. A frequency selection mechanism4. An output coupling scheme6) In thermal equilibrium the stimulated emission is essentially negligible, since the density of electrons in the excited state is very small, and optical emission is mainly because of the spontaneous emission. Stimulated emission will exceed absorption only if the population of the excited states is greater than that of the ground state. This condition is known as Population Inversion. Population inversion is achieved by various pumping techniques.7) Turn on DelayWhen the driving current suddenly jumps from low (I1 < Ith) to high (I2 > Ith) , (step input), there is a finite time before the laser will turn on8) The Quantum LimitFor an ideal photo-detector having unity quantum efficiency and producing no dark current, it is possible to find the minimum received optical power required for a specific BER performance in a digital system. This minimum received power level is known as the quantum limit.9) Gain flatness: The difference between the biggest gain and the smallest gain of the different frequency signal.10) The advantage of Raman amplifier: Simple fabricationLow noise, because amplifying action take place inside the ordinarily fiber.The wavelength can be selected in the low loss waveband.Very wide gain bandwidth.11) Micro bending Loss: microscopic bends of the fiber axis that can arise when the fibers are incorporated into cables. The power is dissipated through the micro bended fiber, because of the repetitive coupling of energy between guided modes & the leaky or radiation modes in the fiber.12) Gain saturation: when near saturation, the gain is nonlinear; saturation, the signal cannot be amplified.13) The disadvantage of Raman amplifier:Need large output power pump laser. As Raman Scattering, the energy is transferred from high frequency to low frequency. Cross talk will affect signal.14) The principal noises associated with photo detectors are:1- Quantum (Shot) noise: arises from statistical nature of the production and collection of photo-generated electrons upon optical illumination. It has been shown that the statistics follow a Poisson process.2- Dark current noise: is the current that continues to flow through the bias circuit in the absence of the light. This is the combination of bulk dark current, which is due to thermally generated e and h in the pn junction, and the surface dark current, due to surface defects, bias voltage and surface area.15) List the advantages of fiber-optic communications over other types of communication technologies.The advantage of optical fiber communication:1. Weight and Size2. Material cost (SiO2 is plentiful)3. Information Capacity4. No electromagnetic interference5. No electrical connection6. Distance between repeaters7. Better security8. Low crosstalk16) The fabrication of amplifierOptical isolator ,Optical multiplexer, EDF, Pump laser17) What are the advantages and disadvantages of SDH system as compared to PDH system? The main limitations of PDH are:Inability to identify individual channels in a higher-order bit stream;Insufficient capacity for network management;Most PDH network management is proprietary;There is no standardized definition of PDH bit rates greater than 140 Mbit/s; and,There are different hierarchies in use around the world. Specialized interface equipment is required to interwork the two hierarchies.18) List the types of fiber attenuation and dispersion.Absorbing\scattering and bending lossMaterial/ mode/ waveguide dispersion.19) The avalanche effect.The created carriers are accelerated by the high electric field, gaining enough energy to cause further impact ionization.20) Dynamic range:System dynamic range is the maximum optical power range to which any detector must be able to respond. 21) Differentiate between step index and graded index optical fiber.Step index fiber has a core of one index of refraction; graded index fiber has a core in which the outside edge starts with a low index of refraction that gradually increases towards the center. 五 计算题 1) Suppose two graded index fibers are misaligned with an axial offset of d=0.3a. Try to calculate the fraction of optical power coupled from the first fiber into the second fiber. (Parameter a is the core radius )The fraction of optical power coupled in the fiber :122222arccos()152262T P d d d d P a a a a π⎧⎫⎡⎤⎛⎫⎪⎪⎛⎫=---⎢⎥⎨⎬ ⎪ ⎪⎝⎭⎢⎥⎝⎭⎪⎪⎣⎦⎩⎭()()21220.320.15arccos(0.15)10.15532π⎧⎫⎛⎫⎪⎪⎡⎤=--- ⎪⎨⎬⎣⎦ ⎪⎪⎪⎝⎭⎩⎭0.748=Turn it into dB , obtain 10log 1.27T P dB P=-1) A double-heterojunction InGaAsP LED emitting at a peak wavelength of 1310 nm has radiative and nonradiative recombination times of 30 and 100 ns, respectively. The drive current is 40 mA. Compute internal quantum efficiency and internal optical power. Then the internal quantum efficiency isthe internal power level is :2)A GaAs laser operating at800nm has a 500-µm length and a refractive index n=3.7.What are the frequency and wavelength spacing?From2cLn ν∆=,22Lnλλ∆=obtain:86310812250010 3.7cGHzLnν-⨯∆===⨯⨯⨯,3) In a 100-ns pulse, 6×106 photons at a wavelength of 1300nm fall on an In GaAs photo detector. On the average, 5.4×106 electron-hole (e-h) pairs are generated.Please calculate the quantum efficiency.The quantum efficiencyNumber of e-h pairs generated= -----------------------------------------Number of incident photons=665.410610⨯⨯0.90=4) Consider a graded-index optical fiber, core index n1=1.50 and the core cladding index difference Δ=0.01.Try to calculate:1. The cladding index n22. The numerical aperture NA解:已知:n1 =1.50,∆=0.01,根据77.0100/130/130/1111int=+=+=---nrrrτττηmW92.21031.110602.1/103106256.604.077.0619834intint=⨯⨯⨯⨯⨯⋅⨯⨯⨯==---smsJqIhcPλη(1)(2)由(1)式,可知2 n 12∆= n 12- n 22n 22= n 12(1-2∆)n 2= n 1∆-21将n 1、∆代入上式,可得n 2==1.5002.01-=1.5098.0⨯=1.50⨯0.98995=1.48491将n 1、∆代入(2)式,可得NA = n 1∆2=1.5002.0=1.50⨯0.14142=0.21213The numerical aperture NA isNA=∆21n =22.001.02560.1=⨯⨯The normalized frequency V=∆221λπn a =01.0231.15056.11416.3⨯⨯⨯=26.454>V C =2.405 7) Consider a 30-km long optical fiber that has an attenuation of 0.8dB/km at 1300 nm. If 200µW of optical power is launched into the fiber, try to calculate the optical output power P out .First we turn the input signal power unit from mW into dBm63()20010()10log 10log 7.01110in in P W W P dBm dBm mW W --⎡⎤⨯⎡⎤===-⎢⎥⎢⎥⨯⎣⎦⎣⎦From ()10(0)l g ()P dB o km z P z α=, as z=30k,the output power is : ()()()10log 10log 11out in P W P W P dBm z out mW mW α⎡⎤⎡⎤==-⎢⎥⎢⎥⎣⎦⎣⎦7.0(0.8/)(30)31.0dBm dB km km dBm=--=- Also。
基于回音壁腔的光热效应研究及其应用
基于回音壁腔的光热效应研究及其应用(申请清华大学理学博士学位论文)培养单位:物理系学科:物理学研究生:王涛指导教师:龙桂鲁教授二〇一八年十二月Opto-Thermal Study and Applications Based on Whispering-galleryMicrocavitiesDissertation Submitted toTsinghua Universityin partial fulfillment of the requirementfor the degree ofDoctor of PhilosophyinPhysicsbyWang TaoDissertation Supervisor:Professor Long GuiluDecember,2018摘要回音壁模式光学微腔由于具有显著的非线性效应而得到广泛的研究,其兼容半导体加工工艺的制备方法使得其易于在芯片上集成和扩展,并且对于以腔量子电动力学为基础的量子计算、全光集成光路芯片和功能器件的应用和发展等方面均具有重要的研究价值。
本文以回音壁腔的非线性光学性质研究和应用探索为目标,围绕着基于回音壁模式光学微腔光热效应的理论和实验应用开展研究,主要的工作内容有:(1)为了解决回音壁腔与光纤锥耦合系统从实验室转化到工程应用面临的关键问题,我们提出采用整体封装的方式。
封装过程中能实时动态调节耦合参数,封装方法成功率高,封装后的光学模式品质因子Q高达2×107。
在封装之后的系统中,还观察到了全光类电磁诱导透明(Electromagnetically Induced Transparency,EIT)和Fano线型现象,并且能产生单模和多模拉曼激光,使得该方法具有重要应用价值。
(2)首次提出采用泵浦-探测方法(pump-probe method,PPM)来快速高精度地测量基于回音壁腔的光学材料热弛豫时间。
建立相关理论模型,通过研究材料自发热弛豫过程中的透射谱响应特征,得到热弛豫时间。
基于Q_型非球面的全景环带红外光学系统设计
基于Q 型非球面的全景环带红外光学系统设计刘一帆 1周峰 2,*胡斌 1晋利兵1(1 北京空间机电研究所,北京 100094)(2 北京邮电大学,北京 100876)k RMS 摘 要 全景环带光学系统凭借周视范围实时成像的特点已在超大视场光学领域中得到了广泛应用。
传统的全景环带光学系统将折射、反射面集成在一片块状透镜中,光线在其内部进行多次折、反射导致头部单元体积较大,同时红外透镜材料密度大、折射率温度稳定性差等特点也与光学遥感器轻量化、可靠性高的应用需求相矛盾。
文章基于像差理论,讨论了全景环带两反射镜红外光学系统头部单元初始结构设计方法,将Q 型(Q-Type 多项式)非球面引入全景头部单元增加优化变量,用偏离因子因子数值表征非球面加工难度,设计了以两反射镜为头部单元的全景环带红外光学系统。
该系统在奈奎斯特频率(20线对/mm )处调制传递函数优于0.5;全视场像元(25 μm×25 μm 区域内)能量集中度优于65%,像质评价结果表明其成像品质良好。
该设计在缩小系统体积、提高光学设计优化效率方面有很大的改进,满足超大视场实时成像的应用需求。
关键词 全景环带光学系统 超大视场 Q 型非球面 光学遥感器中图分类号:O439 文献标志码:A 文章编号:1009-8518(2024)01-0090-09DOI :10.3969/j.issn.1009-8518.2024.01.008Design of a Panoramic Band Infrared Optical System Based onQ-Type Aspherical SurfaceLIU Yifan 1ZHOU Feng 2,*HU Bin 1JIN Libing1( 1 Beijing Institute of Space Mechanics & Electricity, Beijing 100094, China )( 2 Beijing University of Posts and Telecommunications, Beijing 100876, China )Abstract The panoramic band optical system has been widely used in the field of ultra-large field of view optics due to the characteristics of real-time imaging around the view range. For the traditional panoramic ring optical system integrating the refraction and reflection surfaces in a block lens, the light is repeatedly folded and reflected inside the lens to limit the size reduction of the head unit. Moreover, the infrared lens material has high density, low transmittance, and poor refractive index temperature stability, which is contradictory to the needs of high stability and lightweight optical remote sensors. Based on the aberration theory, the initial structure design method of the head unit of the infrared optical system with a panoramic ring and two mirrors is discussed in this paper. Q-Type aspherical surface was introduced into the panoramic head unit to increase the optimization收稿日期:2023-06-28基金项目:国家自然科学基金(1210030377)引用格式:刘一帆, 周峰, 胡斌, 等. 基于Q 型非球面的全景环带红外光学系统设计[J]. 航天返回与遥感, 2024, 45(1): 90-98.LIU Yifan, ZHOU Feng, HU Bin, et al. Design of a Panoramic Band Infrared Optical System Based on Q-Type Aspherical Surface[J]. Spacecraft Recovery & Remote Sensing, 2024, 45(1): 90-98. (in Chinese)航天返回与遥感第 45 卷 第 1 期90SPACECRAFT RECOVERY & REMOTE SENSING2024 年 2 月variables. A panoramic band infrared optical system with two mirrors as the head unit is designed to describe the difficulty in aspherical surface processing. The modulation transfer function of the system is better than 0.5 at Nyquist frequency (20 lp/mm). The energy concentration of full-field pixels (within 25 μm×25 μm) is better than 65%, and the image quality evaluation results show that the image quality is good. This design has great improvement in reducing the size of the system and improving the efficiency of optical design optimization and meets the application requirements of real-time imaging with large field of view.Keywords panoramic ring optical system; wide field of view; Q-Type aspheric surface; optical remote sensor0 引言在航天遥感领域,全景成像的光学系统需要具备超大视场、实时成像和轻量化的特点。
超红LED产品说明书
DESCRIPTIONS●The Hyper Red source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode ●Electrostatic discharge and power surge could damage the LEDs●It is recommended to use a wrist band oranti-electrostatic glove when handling the LEDs ●All devices, equipments and machineries must be electrically groundedFEATURES●Low power consumption ●Wide viewing angle●Available on tape for automatic mounting machine ●Long life-solid state reliability ●RoHS compliantAPPLICATIONS●Status indicator ●Illuminator●Signage applications●Decorative and entertainment lighting●Commercial and residential architectural lightingATTENTIONObserve precautions for handlingelectrostatic discharge sensitive devicesPACKAGE DIMENSIONSL-174XSURTK3.2mm Round Solid State LED LampNotes:1. All dimensions are in millimeters (inches).2. Tolerance is ±0.25(0.01") unless otherwise noted.3. Lead spacing is measured where the leads emerge from the package.4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice.SELECTION GUIDENotes:1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value.2. Luminous intensity / luminous flux: +/-15%.* Luminous intensity value is traceable to CIE127-2007 standards.Part NumberEmitting Color (Material)Lens TypeIv (mcd) @ 20mA [2] Viewing Angle [1]Min.Typ.2θ1/2L-174XSURTK■ Hyper Red (AlGaInP)Red Transparent700160040°*200*500ABSOLUTE MAXIMUM RATINGS at T A =25°CELECTRICAL / OPTICAL CHARACTERISTICS at T A =25°CParameterSymbol Emitting Color Value Unit Typ. Max. Wavelength at Peak Emission I F = 20mA λpeak Hyper Red 645 - nm Dominant Wavelength I F = 20mA λdom [1] Hyper Red 630 - nm Spectral Bandwidth at 50% Φ REL MAX I F = 20mA Δλ Hyper Red 28 - nm CapacitanceC Hyper Red 35 - pF Forward Voltage I F = 20mA V F [2] Hyper Red 1.95 2.5 V Reverse Current (V R = 5V)I RHyper Red-10µANotes:1. The dominant wavelength (λd) above is the setup value of the sorting machine. (Tolerance λd : ±1nm. )2. Forward voltage: ±0.1V.3. Wavelength value is traceable to CIE127-2007 standards.4. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure.ParameterSymbolValueUnitPower Dissipation P D 75 mW Reverse Voltage V R 5 V Junction Temperature T j 115 °C Operating Temperature T op -40 to +85 °C Storage Temperature T stg -40 to +85°C DC Forward Current I F 30 mA Peak Forward CurrentI FP [1]185 mA Electrostatic Discharge Threshold (HBM) -3000VLead Solder Temperature [2] 260°C For 3 Seconds Lead Solder Temperature [3]260°C For 5 SecondsNotes:1. 1/10 Duty Cycle, 0.1ms Pulse Width.2. 2mm below package base.3. 5mm below package base.4. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033.TECHNICAL DATAHYPER REDRECOMMENDED WAVE SOLDERING PROFILENotes:1. Recommend pre-heat temperature of 105°C or less (as measured with a thermocoupleattached to the LED pins) prior to immersion in the solder wave with a maximum solder bath temperature of 260°C2. Peak wave soldering temperature between 245°C ~ 255°C for 3 sec (5 sec max).3. Do not apply stress to the epoxy resin while the temperature is above 85°C.4. Fixtures should not incur stress on the component when mounting and during soldering process.5. SAC 305 solder alloy is recommended.6. No more than one wave soldering pass.PACKING & LABEL SPECIFICATIONSPRECAUTIONSStorage conditions1. Avoid continued exposure to the condensing moisture environment and keep the product away from rapid transitions in ambient temperature.2. LEDs should be stored with temperature ≤ 30°C and relative humidity < 60%.3. Product in the original sealed package is recommended to be assembled within 72 hours of opening. Product in opened package for more than a week should be baked for 30 (+10/-0) hours at 85 ~ 100°C.2. When soldering wires to the LED, each wire joint should be separately insulated with heat-shrink tube to prevent short-circuit contact. Do not bundle both wires in one heat shrink tube to avoid pinching the LED leads. Pinching stress on the LED leads may damage the internal structures and cause failure.3. Use stand-offs (Fig.1) or spacers (Fig.2) to securely position the LED above the PCB.4. Maintain a minimum of 3mm clearance between the base of the LED lens and the first lead bend (Fig. 3 ,Fig. 4).5. During lead forming, use tools or jigs to hold the leads securely so that the bending force will not be transmitted to the LED lens and its internal structures. Do not perform lead forming once the component has been mounted onto the PCB. (Fig. 5 )LED Mounting Method1. The lead pitch of the LED must match the pitch of the mounting holes on the PCB during component placement.Lead-forming may be required to insure the lead pitch matches the hole pitch.Refer to the figure below for proper lead forming procedures.Note 1-3: Do not route PCB trace in the contact area between the leadframe and the PCB to prevent short-circuits." ○" Correct mounting method " x " Incorrect mounting methodLead Forming Procedures1. Do not bend the leads more than twice. (Fig. 6 )2. During soldering, component covers and holders should leaveclearance to avoid placing damaging stress on the LED duringsoldering.(Fig. 7)3. The tip of the soldering iron should never touch the lens epoxy.4. Through-hole LEDs are incompatible with reflow soldering.5. If the LED will undergo multiple soldering passes or face otherprocesses where the part may be subjected to intense heat,please check with Kingbright for compatibility.PRECAUTIONARY NOTES1. The information included in this document reflects representative usage scenarios and is intended for technical reference only.2. The part number, type, and specifications mentioned in this document are subject to future change and improvement without notice. Before production usage customer should referto the latest datasheet for the updated specifications.3. When using the products referenced in this document, please make sure the product is being operated within the environmental and electrical limits specified in the datasheet. Ifcustomer usage exceeds the specified limits, Kingbright will not be responsible for any subsequent issues.4. The information in this document applies to typical usage in consumer electronics applications. If customer's application has special reliability requirements or have life-threateningliabilities, such as automotive or medical usage, please consult with Kingbright representative for further assistance.5. The contents and information of this document may not be reproduced or re-transmitted without permission by Kingbright.6. All design applications should refer to Kingbright application notes available at https:///application_notes。
Laminat Solder Mask数据册说明书
1.This data sheet contains extracts from the original manufacturer's information and is extended by experi-ence that we have from using the product on our ma-chines.Laminat Solder Mask is an aqueous processible dry film solder mask with excellent electrical and physical properties,good dimensional stability and chemical resistance. It is applicable on rigid FR4 or polyamide base material, coated with copper, tin, lead, nickel or gold.It comes as a transparent green film.We supply it preferably in 3 mil (75µm) thickness and 12“ (305mm) width, at roll lengths of either 25, 76 or 152 m. As usu-al for dry resists,the photo polymer is sandwiched between a thin polyolefine foil and a 25 µm polyester protection foil.Laminat Solder Mask responds to light wavelengths in the near UV, with peaks from 360 to 400 nm. It should be handled in rooms with yellow or gold (UV-safe) light only.2.Processing Laminat Solder Mask consists of the steps:cleaning,lamination,exposure,development, and curing.2.1 CleaningThe optimum performance of Laminat Solder Mask de-pends on the condition and cleanliness of the copper surface prior to lamination. The surface must be free of contaminants such as residual water, dust, grease, oxide or other residues.We recommend wet brushing of the boards (with a tar-get roughness of 4 µm), extra fresh water rinse and drying with warm air. It is important to have the board cleaned shortly before lamination. If there was a hold time after cleaning of several hours it is recommended to repeat the cleaning before laminating the board.If the board was tin/lead covered before solder mask application it is of highest importance to remove all rests of flux and flux cleaner, from the metal surface and from the board base. Have details from the flux supplier.After cleaning it is recommended to dry the board in an oven at 80 °C for 30 min. Dryness of the board is essential for solder mask adhesion.2.2 LaminationLaminat Solder Mask is laminated under heat and pressure. We recommend our laminators RLM 419p for this purpose. They allow to adjust the lamination pressure, thus resulting in good vertical distribution of the mask, with no air inclusions between the tracks. The laminator manual should be considered for details on the lamination conditions. For our RLM 419p we re-commend temperatures of 110-115 °C and a conveyor speed of approx. 0.3 m/min. The pressure should be set to3to5on the scale.The above settings are meant as start-up information. Your own experience on these parameters will be required.Lamination of Laminat Solder Mask must be per-formed in an environment that is free from dust and dirt. The condition and maintenance of the lamination equipment is very important for high yields.Panels may be processed immediately after lamination.Al-ways stack the panels in vertical racks, never in hori-zontal position.2.3 ExposureIt is recommended to let the panels stabilize to room temperature prior to exposure. Any standard UV ex-posure unit with light of 360 to 400 nm wavelength will be suitable for exposure. It is important to assure an intimate contact between the artwork and the laminate. For very fine line reproduction, a parallel beam expos-ure unit is recommended.The exposure time on our HELLAS vacuum exposure unit is about 20 to 30 seconds. The exact exposure time depends on the properties of the light source, and precise determination of the exposure time requires using a 21 step Stouffer grey scale tablet. Steps 8 to 10should be free after developing the board.This equates to about 250 to 500 mJ energy of light.Laminat Solder Mask Instruction for Use2.4 DevelopmentBetween exposure and development a hold time of 5 to 30 minutes should be kept. The max. hold time is minat Solder Mask may be developed in aqueous alkaline solutions, in stationary or conveyor machines, but always under spray pressure. (For con-veyor machines we recommend to add up to 1 ml/l of anti-foam agent to the solution.) We offer our so called special developer for negative boards, based on sodi-um carbonate, in portions for 1l or for 10 l of developer solution.Prior to development the polyester protection must be peeled off the panel.Development in our SPLASH machine takes up to 90s at 40 °C, depending on the load of dissolved material in the solution.The undeveloped parts of the resist have a white to grey, slimy aspect. With sufficient ex-posure, a prolonged development will not be critic. If the mask peels off during exposure the laminating conditions were poor or the exposure was significantly too short.Rinsing the panels after development with lots of fresh water under spray pressure is vital, as well as a thor-ough drying with hot air.2.5 CuringCuring Dynamask can be done with UV light and/or heat. Best is a two step procedure. First comes a UV curing for about 30 minutes on our HELLAS or with 4 J of light energy in a UV curing machines. Second is a thermal hardening in an oven with fresh air input at 100 °C for 1 h. If the oven does not allow fresh air in-put the curing must be done only under UV, with the double time or energy. Heating in a closed oven will cause burning effects and vapour condensation on the pads will void solderability.After sufficient curing the solder mask is ready for hot air levelling, wave soldering, IR soldering, and is res-istant against most solvents, fluxes and flux cleaners.3.The developer itself does not contain heavy metals or reduction agents, but the organic load from the dis-solved resist causes oxygen consumption in the water cleaning stations. One approach to treat the used li-quid is to add acid until the organic parts fall out. The residual water could be drained. Handling this problem requires that you take advise from your local authorit-ies.4.The laminate shall not be stored at more than 15 °C. The shelf life under this condition is less than 6 months.5.Laminat Solder Mask should be used in rooms with good ventilation. The usual application of the resist in laminators will produce fumes that need extraction. After handling the resist please wash your hands. Fur-ther details on health and safety are given in the safety data sheet.Conditions of storage and application of this product being out of our reach, we do not take any liability for the result of using this product, neither technically nor commercially. Our warranty covers solely the quality of the product at the time of shipment.6.© 2002-2008 Bungard ElektronikLaminat Solder Mask Instruction for Use。
摄影专业术语(英文)
abaxial 【光】离中心光轴ABBE number 雅比数值,即相对色散倒数aberration change 析光差变化﹝因设计及应用光圈产生之光差变化﹞aberrations 【光】析光差abrasion marks ﹝底片﹞花痕abrasive reducer 局部减薄剂absolute temperature 绝对温度absorption 吸收性能absorption curve 吸收曲线absorption filter = frequency filter色谱滤片AC = alternating current交流电AC coupler 交流电耦合器accelerator 促进剂accessories 配件accessory shoe 配件插座accumulator 储电器acetate base 醋酸片基acetate film 醋酸质胶片或菲林acetate filter 醋酸质滤光片acetic acid 【化】醋酸﹝用于停影、定影、漂白及过调药﹞,亦乙酸acetic acid, glacial 【化】冰醋酸﹝即结晶如冰状的醋酸,用于急制及定影药﹞acetone 【化】丙酮﹝有机溶剂,配用于不溶于水的化学物﹞achromat = achromatic lens消色差镜头achromatic 【光】消色差的achromatic lens 消色差镜头acid 【化】酸acid fixer 酸性定影药acid rinse 酸漂acoustic 音响学,音响学的actinic 光化的,由光产生的化学变化action grip 快速手柄Action Photography 动态摄影acutance 明锐度,常指底片结像adapter 转接器adapter cable 转接导线adapter ring 转接环additive color printing method 加色法彩色放相技巧﹝参阅附表﹞additive synthesis 【光】原色混合﹝原色包括红、绿、蓝色,三色相加产生白色,红绿产生黄色,红蓝产生洋红,绿蓝产生青靛色﹞adhesive tape 胶纸advance lever ﹝相机﹞过片杆aerial camera 空中摄影机,或称遥感摄影机aerial film 空中摄影菲林,或称遥感摄影菲林aerial image 空间凝象﹝指凝聚在焦点平面位置的影像﹞aerial oxidation 氧化﹝指与空气接触的氧化﹞aerial perspective 透视感﹝由气层产生远物模糊的透视现像﹞Aerial Photography 空中摄影,或称遥感摄影aerial survey lens 空中测量镜头,应用于在空中测量地面,取景角度达120度,光圈多数固定于f5.6afocal lens 改焦镜头ageing 成熟过程1. 使感光物体成熟的过程2. 光学玻璃性能变为稳定所需的过程agitate 搅动agitation 搅动过程air brush 喷笔,执底或执相之用air lens 空气镜片﹝指镜片与镜片之空间,其作用如镜片﹞aircraft camera 航空摄影机album 相簿albumen 蛋白albumen pager 蛋白相纸,以蛋白作为乳化剂的相纸albumen print 蛋白相片,以蛋白相纸放成的作品albumin 蛋白质alcohol 酒精alcohol thermometer 酒精温度计alkali 【化】碱alkali earth 【化】碱土﹝例如钡barium,钙calcium﹞alkali metal 【化】碱金属﹝例如锂lithium,钠sodium﹞Alpine Photography 山景摄影alternating current 交流电amateur 业余amateur photographer 业余摄影师amber 琥珀色Ambrotype 火棉胶正摄影法﹝参阅附表﹞American National Standard Institute 美国国家标准学会,ANSI是感光度单位之一American Standards Association 1. 美国标准协会2. ASA是感光度单位之一amidol 【化】二氨基酚,苯系化合物,俗称克美力,显影剂之一ammonium bichromate 【化】重铬酸铵,感光剂之一ammonium bifluoride 【化】氟化氢铵,用于使感光膜脱离玻璃片基ammonium carbonate 【化】碳酸铵,用于暖调显影药ammonium choloride 【化】氯化铵,用于漂白,过调药及感光剂ammonium persulphate 【化】过硫酸铵,显影剂之一ammonium sulphocyanate 【化】= ammonium thiocyanate硫氰酸铵,用于过金﹝色﹞药ammonium thiocyanate 【化】= ammonium sulphocyanate硫氰酸铵,用于过金﹝色﹞药Amphitype 正负双性相片amplifier 扩大器anamorphic process 变形拍摄方法anamorphotic lens 变形镜头,可将影像高度或阔度压缩或扩展anastigmat 消像散的anastigmat lens 消像散镜头angle coverage ﹝镜头﹞取景角度angle finder 量角器angle of gaze 凝视角﹝人类视角通常是120度,当集中注意力时约为五分之一,即25度﹞angle of incidence 【光】入射角angle of lens 镜头涵角angle of reflection 【光】反射角angle of refraction 【光】折射角angle of shooting 拍摄角度angle of view 观景角度Angstrom 〈埃〉长度单位=10-10公尺anhydrous 无水的animation 动画Animation Photography 动画摄影animation stand 动画台annealing 【光】热炼﹝制玻璃﹞法﹝这个方法是把玻璃在350至600度的电焗炉焗很长的时间,可减低制镜是时产生的扭曲﹞ANSI 1. American National Standard Institute﹝美国国家标准学会﹞2. 美国国家标准学会订出的感光度单位之一anti-fogging agent 防雾化剂anti-halation backing 防晕光底层anti-reflection coating 防反光膜anti-static wetting agent 消静电湿润剂anti-vignetting filter 消除黑角滤片aperture 光圈aperture display 光圈显示aperture needle 圈指针aperture ring 光圈环aperture scale 光圈刻度apochromatic 【光】复消色差Applied Photography 应用摄影arabic gum 阿拉伯树胶arc lamp 弧光灯Architectural Photography 建筑摄影area masking 局部加网area metering 区域测光artificial light 人造光源ASA 1. American Standards Association﹝美国标准协会﹞2. 感光度单位之一ASA setting device 感光度调校器asphalt 沥青aspherical lens 非球面镜头astigmatism 【光】像散,结像松散现像Astrophotography 天文摄影attachment 附加器audio 听觉性audio visual 视听auto = automatic自动的简称automatic 自动化automatic loading 自动上片automatic bellows 自动近摄皮腔,自动回校光圈的近摄皮腔automatic camera 自动化相机automatic extension tube 自动延长管,自动回校光圈的延长管automatic flash 自动闪灯automatic focusing 自动对焦automatic rewinding 自动回卷automatic shooting range 自动拍摄范围automatic tray siphon 自动虹吸器,用于冲盆automatic winding 自动卷片auxiliary lens 附加镜头available light 现场光average gradient 平均倾斜率,平均梯度average metering 平均测光axial 【光】光轴back focal distance 【光】后焦距﹝指镜头与菲林间的距离﹞back projection 后方投影background 背景backlighting 背光bag bellow 袋型皮腔bar chart 棒形测试图bar static 线形静电纹﹝因拉开过度卷紧菲林时产生的现象﹞barn doors 遮光掩门barrel distortion 【光】桶形变形﹝影像四边线条呈外弯线变形﹞bas-relief 浮雕,黑房特技之一base 片基batch number 分批编号battery 电池battery charger 电池充电器battery pack 电池箱bayonet mount 刀环,镜头接环之一battery charger 电池充电器BCPS =beam candlepower second光束烛光秒bead static 珠形静电纹,亦称pearl static,在冲洗未完成前,用手拉擦过而产生的现象beam splitter 分光器bellows 皮腔bellows extension 皮腔延长度,多指近摄benzene 【化】苯benzotriazole 【化】苯并三唑﹝用于防雾化剂﹞between-the-lens-shutter 镜间快门bi-convex 【光】双凸镜片bi-prism 双棱镜bi-prism focusing 双棱镜对焦bichromated albumen process 重铬酸盐蛋白蚀刻法﹝参阅附录﹞binocular vision 视觉三维效果birefringence =double refraction双重折射,因镜片结构缺点产生重复折射现象bitumen 沥青bitumen grain process 沥青微粒蚀刻法﹝参阅附录﹞Black & White Photography 黑白摄影black filter 透紫外光滤片,只让紫外光透过的滤片black light 紫外光灯的俗称black opaqueopague 黑丹,修饰底片颜料bladed shutter 片闸式快门blank 【光】粗模,制镜过程中,经rough shaping粗铸而成的镜片=dummy filter空白滤光片,作为对焦等操作的预备,使应用滤镜拍摄时不会产生误差bleach 漂白药bleach-fix 漂定bleach-out process 漂移方法﹝参阅附录﹞bleaching 漂白bleeding 无边﹝相片﹞blimp 1. 闪烁2.保温隔音机套blocking 【光】粗磨,制造镜头过程之一,使blank粗模﹝镜片﹞磨成Blocking out 遮挡blotch static 雀斑形静电纹,亦称moisture static,因在湿度高的环境下回卷菲林而产生的现象。
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The study of quantum and nonlinear optical phenomena in atoms (impurities) embedded in photonic band gap (PBG) materials has attracted much attention recently. Many interesting effects have been predicted when radiative transitions of the atoms are near-resonant with the edge of a PBG. As examples we mention the localization of light and the formation of ‘photon-atom bound states’ [1–3], suppression and even complete cancellation of spontaneous emission [4–7], population trapping in two-atom systems [7], phase dependent behaviour of the population dynamics [8], enhancement of spontaneous emission interference [9] and other phenomena [10,11]. In addition there is also current interest with regard to quantum non-demolition measurements in modified reservoirs, such as the PBG [12,13]. We note that there is a formal similarity between the models used in the above studies and those of near threshold photoionization and photodetachment [14,15]. In this Rapid Communication we study the probe absorption spectrum of a Λ-type system, similar to the one used in previous studies [8,10], with one of the atomic transitions decaying spontaneously near the edge of a PBG. We show that the atom becomes transparent to a probe laser field which couples to the second atomic transition. This transparency occurs even in the presence of the background decay of the upper atomic level. This effect is closely related to the phenomenon of electromagnetically induced transparency (EIT) which occurs, for example, in three level atoms driven by two laser fields [16,17] and with phenomena where intrinsic transparency occurs via decay interference [18–20]. The atomic system under consideration is shown in figure 1a. It consists of three atomic levels, labelled |n , (n = 0, 1, 2), with ω0 < ω2 < ω1 , where ωn denotes the energy of each atomic state. The atom is assumed to be initially in state |0 . The transition |1 ↔ |2 is taken to be near-resonant with a photonic band edge, while the transition |0 ↔ |1 is assumed to be far away from the gap and can therefore be treated as occurring in free space. The Hamiltonian which describes the dynamics of this system, in the interaction picture and the rotating wave approximation, is given by (¯ h = 1), H = Ωeiδt |0 1| + gk,λ e−i(ωk −ω12 )t |1 2|αk,λ 1
3/2 −i[π/4+(δg −δ )(t−t′ )]
For the isotropic PBG model, using Eq. (6), ˜ (s) = K β 3/2 e−iπ/4 , s + i(δg − δ ) (11)
k,λ
ak,λ (t)|2, {k, λ} .
(2)
Substituting Eqs. (1) and (2) into the time-dependent Schr¨ odinger equation and eliminating the vacuum amplitude ak,λ (t), we obtain ia ˙ 0 (t) = Ωa1 (t) γ ia ˙ 1 (t) = Ωa0 (t) − δ + i a1 (t) 2
arXiv:quant-ph/9908026v1 6 Aug 1999
γ + H.c. − i |1 1| . 2
(1)
Here, Ω = −µ01 ·ǫE is the Rabi frequency and δ = ω − ω10 , with ωnm = ωn − ωm , is the laser detuning from resonance of the |0 ↔ |1 transition. In addition, gk,λ = −i 2πωk /V ǫk,λ ·µ12 denotes the coupling of the atom with the modified vacuum modes. Both the Rabi frequency and the atom-vacuum coupling strength are taken to be real. The dipole matrix element of the |n ↔ |m transition is denoted by µnm . Also, ǫ and E are respectively the polarization unit vector and electric field amplitude of the laser field, while ǫk,λ is the polarization unit vector, αk,λ is the photon annihilation operator, ωk is the angular frequency of the {k, λ} mode of the quantized vacuum field and V is the quantization volume. Finally, γ denotes the background decay rate from state |1 to all other states of the atom. It is assumed that these states are situated far from the gap so that such background decay can be treated as a Markovian processes. The radiative shift associated with this decay has been omitted. We note that, as long as the laser field is sufficiently weak, γ can also account for the radiative decay of state |1 to state |0 . We proceed by expanding the wavefunction of the system, at a specific time t, in terms of the ‘bare’ state vectors such that |ψ (t) = a0 (t)|0, {0} + a1 (t)e−iδt |1, {0} +
Transparency near a photonic band edge
E. Paspalakis, N.J. Kylstra and P.L. Knight
Optics Section, Blackett Laboratory, Imperial College, London SW7 2BZ, United Kingdom (February 1, 2008) We study the absorption and dispersion properties of a Λ-type atom which decays spontaneously near the edge of a photonic band gap (PBG). Using an isotropic PBG model, we show that the atom can become transparent to a probe laser field, even when other dissipative channels are present. This transparency originates from the square root singularity of the density of modes of the PBG material at threshold. PACS : 42.50.Gy, 42.70.Qs