EE-SX199中文资料

Engineering Data
Forward Current vs. Collector Dissipation Temperature Rating
Collector dissipation Pc (mW)
IF
Forward Current vs. Forward Voltage Characteristics (Typical)
Collector–Emitter voltage VCE (V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Response Time vs. Load Resistance Characteristics (Typical)
Vcc = 5 V Ta = 25°C
Ta = 25°C IF = 50 mA IF = 40 mA
Relative Light Current vs. Ambient Temperature Characteristics (Typical)
Relative light current I L (%)
IF = 20 mA VCE = 5 V
2.35+0.1 2.5+0.1
9.2±0.3 Cross section AA C E 4.3
Four, 0.7+0.1 dia. holes Two, 0.8+0.1 dia. holes
K A
4.3+0.1 9.2+0.1
Specifications
Absolute Maximum Ratings (Ta = 25°C)
Dark Current vs. Ambient Temperature Characteristics (Typical)
VCE = 10 V 0 x
Light current I L (mA)
IF = 30 mA
IF = 20 mA IF = 10 mA
Dark current I D (nA)
Light Current vs. Forward Current Characteristics (Typical)
Ta = 25°C VCE = 5 V
Forward current I F (mA)
Forward current I F (mA)
Ta = –30°C Ta = 25°C Ta = 70°C
Item Emitter Forward current Pulse forward current Reverse voltage Detector Collector–Emitter voltage Emitter–Collector voltage Collector current Collector dissipation Ambient temperature Operating Storage Soldering Note: IF IFP VR VCEO VECO IC PC Topr Tstg Tsol Symbol Rated value 50 mA (see note 1) 1 A (see note 2) 4V 30 V --20 mA 100 mW (see note 1) –25°C to 85°C –30°C to 100°C 260°C
元器件交易网
Opto–Switch
Transmissive
Phototransistor output. General-purpose model with a 3-mm-wide slot. PCB mounting type. High resolution with a 0.5-mm-wide aperture. Incorporating location pins to prevent mis–orientation
1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 µs maximum with a frequency of 100 Hz.
元器件交易网
Sensing Position Characteristics (Typical)
IF = 20 mA VCE = 10 V Ta = 25°C (Center of optical axis)
Response Time Measurement Circuit
Input 90 % 10 %
Relative light current I L (%)
EE–SX199
Dimensions
12.2±0.3 K 5±0.1 0.5±0.1 Four, C0.3 Two, C1±0.3 A Optical axis 8.5±0.1 10±0.2 6.5±0.1 E
Internal Circuit
C
Terminal No. A K C E
Name Anode Cathode Collector Emitter
Response time tr, tf ( µ s)
Output
Input
Output
Load resistance RL (kΩ)
Distance d (mm)
Electrical and Optical Characteristics (Ta = 25°C)
Item Emitter Forward voltage Reverse current Peak emission wavelength Detector Light current Dark current Leakage current Collector–Emitter saturated voltage Peak spectral sensitivity wavelength Rising time Falling time IR λP IL ID ILEAK VCE (sat) λP tr tf Symbol VF Value 1.2 V typ., 1.4 V max. 0.01 µA typ., 10 µA max. 940 nm typ. 0.5 mA min., 14 mA max. 2 nA typ., 100 nA max. --0.1 V typ., 0.4 V max. 850 nm typ. 4 µs typ. 4 µs typ. IF = 30 mA VR = 4 V IF = 20 mA IF = 20 mA, VCE = 5 V VCE = 20 V, 0 x --IF = 40 mA, IL = 0.5 mA VCE = 10 V VCC = 5 V, RL = 100 Ω, IL = 5 mA VCC = 5 V, RL = 100 Ω, IL = 5 mA Condition
Unless otherwise specified, the tolerances are ±0.2. PCB Mounting
6.2±0.5 8.1+0.1 Four, 0.25±0.1 Cross section BB
0 Two, 0.7 –0.1 dia.
Four, 0.5±0.1 2.5±0.1
PC
Ambient temperature Ta (°C)
Forward voltage VF (V)
Light current I L (mA)
Forward current IF (mA)
Light Current vs. Collector–Emitter Voltage Characteristics Typical)