LM2904DR中文资料
LM2904YST中文资料
Rev 3October 20051/15LM2904Low Power Dual Operational Amplifier■Internally frequency compensated ■Large DC voltage gain: 100dB ■Wide bandwidth (unity gain): 1.1MHz (temperature compensated)■Very low supply current/op (500µA) essentially independent of supply voltage■Low input bias current: 20nA (temperature compensated)■Low input offset current: 2nA■Input common-mode voltage range includes ground■Differential input voltage range equal to the power supply voltage■Large output voltage swing 0V to (V CC - 1.5V)DescriptionThis circuit consists of two independent, high gain, internally frequency compensated which were designed specifically for automotive and industrial control system. It operates from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage.Application areas include transducer amplifiers,DC gain blocks and all the conventional op-amp circuits which now can be more easily implemented in single power supply systems. For example, these circuits can be directly supplied with off the standard +5V which is used in logic systems and will easily provide the required interface electronics without requiring any additional power supply.In the linear mode the input common-mode voltage range includes ground and the output voltage can also swing to ground, even though operated from only a single power supply voltage.SMini LM29042/15Order CodesPart Number Temperature RangePackage Packing Marking LM2904N -40, +125°C DIP8T ubeLM2904NLM2904D/DT SO-8T ube or T ape & Reel2904LM2904PT TSSOP8(Thin Shrink Outline Package)Tape & Reel LM2904ST mini SO-8Tape & Reel K403LM2904YD/YDT SO-8 (automotive grade level)T ube or T ape & Reel2904Y LM2904YPT TSSOP8 (automotive grade level)Tape & Reel LM2904YSTminI SO-8(automotive grade level)Tape & Reelk409LM2904Absolute Maximum Ratings3/151 Absolute Maximum RatingsTable 1.Key parameters and their absolute maximum ratingsSymbol ParameterValue Unit V CC Supply Voltage+32V V id Differential Input Voltage +32V V IInput Voltage-0.3 to +32VOutput Short-circuit to Ground (1)1.Short-circuits from the output to V CC can cause excessive heating if Vcc + > 15V. The maximumoutput current is approximately 40mA, independent of the magnitude of V CC .Destructive dissipation can result from simultaneous short-circuits on all amplifiers.p tot Power Dissipation (2)2.Power dissipation must be considered to ensure maximum junction temperature (Tj) is notexceeded.500mW I in Input Current (3)3.This input current only exists when the voltage at any of the input leads is driven negative. It is dueto the collector-base junction of the input PNP transistor becoming forward biased and thereby acting as input diodes clamps. In addition to this diode action, there is also NPN parasitic action on the IC chip. This transistor action can cause the output voltages of the op-amps to go to the V CC voltage level (or to ground for a large overdrive) for the time duration than an input is drivennegative. This is not destructive and normal output will set up again for input voltage higher than -0.3V.50mA T oper Operating Free-Air Temperature Range -40 to +125°C T stgStorage T emperature Range-65 to +150°CR thjaThermal Resistance Junction to AmbientSO-8TSSOP8DIP8MiniSO-812512085190°C/WESDHBM: Human Body Model (4)4.Human body model, 100pF discharged through a 1.5k Ω resistor into pin of device.300V MM: Machine Model (5)5.Machine model ESD, a 200pF cap is charged to the specified voltage, then discharged directly intothe IC with no external series resistor (internal resistor < 5Ω), into pin to pin of device.200V CDM: Charged Device Model1.5kVTypical Application Schematic LM29044/152 Typical Application Schematic3 ElectricalCharacteristicsTable 2.V CC+ = 5V, V cc- = Ground, V O = 1.4V, T amb = 25°C (unless otherwise specified)Symbol Parameter Min.Typ.Max.UnitV io Input Offset Voltage (1)T amb = 25°CT min≤ T amb≤ T max.279mVI io Input Offset CurrentT amb = 25°CT min≤ T amb≤ T max.23040nAI ib Input Bias Current (2)T amb = 25°CT min≤ T amb≤ T max.20150200nAA vd Large Signal Voltage GainV CC+ = +15V,R L=2kΩ, V o = 1.4V to 11.4VT amb = 25°CT min≤ T amb≤ T max.5025100V/mVSVR Supply Voltage Rejection Ratio (R S≤10kΩ)T amb = 25°CT min≤ T amb≤ T max.6565100dBI cc Supply Current, all Amp, no loadT amb = 25°C, V CC= +5VT min≤ T amb≤ T max., V CC = +30V0.7 1.22mAV icm Input Common Mode Voltage Range (V cc= +30V) (3)T amb = 25°CT min≤ T amb≤ T max.V CC+ -1.5V CC+ -2VCMR Common-mode Rejection Ratio (R S= 10kΩ)T amb = 25°CT min≤ T amb≤ T max.706085dBI source Output Short-circuit CurrentV CC = +15V, V o = +2V, V id = +1V204060mAI sink Output Sink CurrentV O = 2V, V CC= +5VV O = +0.2V, V CC = +15V10122050mAµAV OPP Output Voltage Swing (R L= 2kΩT amb = 25°CT min≤ T amb≤ T maxV CC+ -1.5V CC+ -2V5/15V OH High Level Output Voltage (V cc + 30V)T amb = +25°C, R L= 2kΩT min≤ T amb≤ T max.T amb = +25°C, R L= 10kΩT min≤ T amb≤ T max.262627272728VV OL Low Level Output Voltage (R L= 10kΩ)T amb = +25°CT min≤ T amb≤ T max52020mVSR Slew RateV cc = 15V, Vi = 0.5 to 3V, R L= 2kΩ, C L = 100pF,unity gain0.30.6V/µsGBP Gain Bandwidth Product f = 100kHzV cc = 30V, V in = 10mV, R L= 2kΩ, C L = 100pF0.7 1.1MHzTHD Total Harmonic Distortionf = 1kHz, A V = 20dB, R L = 2kΩ, V o = 2Vpp,C L = 100pF, V cc = 30V0.02%DV io Input Offset Voltage Drift730µV/°CDI io Input Offset Current Drift10300pA/°CV O1/V O2Channel Separation (4)1kHz ≤ f ≤ 20kHz120dB1. V O= 1.4V, R S = 0Ω, 5V < V CC+ < 30V, 0V < V ic < V CC+ - 1.5V2.The direction of the input current is out of the IC. This current is essentially constant, independentof the state of the output, so no loading charge change exists on the input lines3.The input common-mode voltage of either input signal voltage should not be allowed to gonegative by more than 0.3V. The upper end of the common-mode voltage range is V CC+ –1.5V, buteither or both inputs can go to +32V without damage.4.Due to the proximity of external components insure that coupling is not originating via straycapacitance between these external parts. This typically can be detected as this type ofcapacitance increases at higher frequencies.Symbol Parameter Min.Typ.Max.Unit6/157/158/15Typical single - supply applicationsF9/15Figure 22.High input Z, DC differentialFigure ing symmetrical amplifiers to10/15LM2904Package Mechanical Data 4 Package Mechanical DataIn order to meet environmental requirements, ST offers these devices in ECOPACK® packages.These packages have a Lead-free second level interconnect. The category of second levelinterconnect is marked on the package and on the inner box label, in compliance with JEDECStandard JESD97. The maximum ratings related to soldering conditions are also marked onthe inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at:.4.111/15Package Mechanical Data LM290412/15LM2904Package Mechanical Data13/15Package Mechanical Data LM290414/154.4 Mini SO-8PackageLM2904Revision History15/155 Revision HistoryDate RevisionChangesJan. 20021Initial release.June 200521 - PP AP references inserted in the datasheet see table Order Codeson page 22 - ESD protection inserted in T able 1.: Key parameters and their absolute maximum ratings on page 4.Oct. 20053PP AP part numbers added in table Order Codes on page 2.Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics.All other names are the property of their respective owners© 2005 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America。
LM2904中文资料
ABSOLUTE MAXIMUM RATINGS
SYMBOL VS VIN Supply voltage, V+ Differential input voltage Input voltage Maximum power dissipation TA=25°C (Still air)1 FE package N package D package Output short-circuit to GND5 V+<15 VDC and TA=25°C Operating ambient temperature range NE532/LM358/LM358A TA LM258 LM2904 SA532 SE532/LM158 TSTG TSOLD Storage temperature range Lead soldering temperature (10sec max) 0 to +70 -25 to +85 -40 to +125 -40 to +85 -55 to +125 -65 to +150 300 °C °C °C °C °C °C °C Continuous PARAMETER RATING 32 or ±16 32 -0.3 to +32 UNIT VDC VDC VDC
Philips Semiconductors
Product specification
Low power dual operational amplifiers
NE/SA/SE532/ LM158/258/358/A/2904
DESCRIPTION
The 532/358/LM2904 consists of two independent, high gain, internally frequency-compensated operational amplifiers internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. Operation from dual power supplies is also possible, and the low power supply current drain is independent of the magnitude of the power supply voltage.
MR2900资料
Input voltage autosensingProvision for Standby mode operation Partial Resonance Power Supply IC Module MR29001. The circuit diagrams and parts tables provided for reference purposes in this document are for the use of persons with basic circuit design knowledge to aid in understanding the product.As such they do not constitute a guarantee of output, temperature, or other characteristics, or characteristics or safety as determined by the relevant authorities.2. The products noted in this document are semiconductor components for use in general electronic equipment and for general industrial use. Consideration has been given to ensure safety and reliability as appropriate for the importance of the systems used by the customer. Please contact Shindengen's sales section if any points are unclear.3. Fail-safe design and safety requirements must be considered in applications in which particularly high levels of reliability and safety are required (eg nuclear power control, aerospace, traffic equipment, medical equipment used in life-support, combustion control equipment, various types of safety equipment).Please contact our sales department if anything is unclear.4. Shindengen takes no responsibility for losses or damage incurred, or infringements of patents or other rights, as a result of the use of the circuit diagrams and parts tables provided for reference purposes in this document.5. The circuit diagrams and parts tables provided for reference purposes in this document do not guarantee or authorize execution of intellectual property rights, or any other rights, of Shindengen or third parties.6. Systems using Shindengen products noted in this document and which are strategic materials as defined in the Foreign Exchange and Foreign Trade Control Law or the Export and Trade Control Law require export permission under the relevant legislation prior to export.Inquiries: Functional Devices Division, Device Sales Department, Device Sales SectionPh 03-5951-8131Fax 03-5951-8089Thank you July 1st, 19951. Outline1.1 Introduction (4)Characteristics (4)1.2Applications (4)1.31.4 Absolute Maximum Ratings (4)and Reference Output Capacities1.5 Equivalent Circuit and Dimensions (4)2. Block Diagram2.1 Block Diagram (5)2.2 Pin Function Description (5)3. Operation Description3.1 Start-up Circuit (6)3.2 On-trigger Circuit (7)3.3 Partial Resonance (7)3.4 Standby Mode Control (8)3.5 Output Voltage Control (9)3.6 Soft Drive Circuit (9)3.7 Circuit for Load Shorts (10)3.8 Collector Pin (pin 7) (10)3.9 Thermal Shut-down Circuit (TSD) (10)3.10 Over-voltage Protection Circuit (OVP) (10)3.11 Malfunction Prevention Circuit (11)(patent applied for)3.12 Over-current Protection Circuit (11)4. Standard Circuit (12)5. Design Procedures5.1 Design Flow Chart (13)5.2 Main Transformer Design Procedure (13)5.3 Main Transformer Design Examples (15)5.4 Selection of Constants for (18)Peripheral Components6. Cooling Design6.1 Junction Temperature and Power Losses (19)6.2 Junction Temperature (19)and Thermal Resistance6.3 Cautions for Cooling Design (19)The values presented in this document are based on tentative specifications as of June 29th, 2001, and may change in futureThe MR2900 Series IC modules are designed for both 200V and autosensing input with a burst-mode switching function at micro-loads. These modules are of the partial resonance type, and are comprised of a switching device optimized for both 200V and autosensing power supply input, and a control IC. They are designed to provide the following power supply characteristics.1.2 Characteristics1. An ultra high-speed IGBT with 900V resistance ensures high efficiency and low noise at partial resonance.2. An ultra high-speed IGBT with 900V resistance simplifies design for autosensing power supply input.3. Very low power consumption at micro-loads (in burst mode).4. Onboard start-up circuit eliminates the need for start-up resistors.5. Soft drive circuit achieves low noise levels.6. Excess current protection function (ton limit, primary current limit).7. Excess voltage protection and thermal shut-down function.8. Power supply circuits may be constructed with a minimum of external components. 9. The use of a full mold package provides benefits in insulation design.1.3 ApplicationsTVs, displays, printers, VTR, DVD, STB, air-conditioners, refrigerators, and other electrical appliances, and office equipment.1.4 Absolute Maximum Ratings and Reference Output CapacitiesAbsolute maximum ratingsMaximum output capacity P o ［W ］Peak input voltagePeak input currentInput voltage rangeModelV in ［V ］I in ［A ］90V to 276VAC180V to 276VACMR2920 7 100 150MR2940 90010 150 225Maximum output capacity and input voltage range differ with design conditions.1.5 Equivalent Circuit and DimensionsCollector GNDV ccEmitter/OCL F/BZ/C V in 4.5±0.54.2±0.5 4.25.0±0.2+0.27.6±0.52.7±0.20.7±0.22.2 Pin Function DescriptionPin numberAbbreviationDescription1Z/CTrigger input pinZero detection voltage: 0.35VStandby: Up to 4.5V in standby mode.2 F/B Feedback signal input pint on(min) to t on(max): 1.5V to 4.5V/0μs to 25μs Standby: Oscillation stopped at up to 0.8V. Standby: Oscillation started at 1.8V or higher.3 GND GND pin4 V cc IC power supply pinOscillation start voltage: V cc ≧14V Oscillation stop voltage: V cc ≦8.5V Excess voltage latching voltage:V cc =20V 5 V in Start pinCurrent supplied V in →V cc at start-up Start-up circuit OFF:V cc ≧14V Start-up circuit ON: V cc ≦7.6V6Emitter /OCL Main switching device emitter and current detection pin Excess current detection threshold:0.6VExcess current detection threshold at standby: 50mV7 Collecter Main switching device collector pinCollector Emitter/OCLV cc Z/C F/B V in GNDshort, oscillation is stopped when the voltage at the V cc pin reaches 8.5V, and when this voltage drops to 7.6V the start-up circuit operates again and the voltage at the V cc pin then begins rising. See Fig.3.2.Incorporation of the functions described above improve efficiency, particularly during standby, and reduces the number of start-up resistors required, thus reducing the overall number of components.The MR2000 Series employs current-critical operation to detect energy bursts at the secondary side of the main transformer and switch on the main switching device.Energy discharge timing is detected at the negative edge of the control coil voltage waveform (0.2V in the diagram at right), and the main switching device switched on for current-critical operation.The on-trigger detection voltage (0.2V) incorporates a 50mV hystersis to increase noise resistance.3.3 Partial ResonanceIn current-critical switching power supplies (RCC), damping begins at the resonance frequency (determined by the primary inductance L P of the main transformer and the resonating condenser C) when the secondary current in the circuit formed by connecting the resonating condenser between the collector and GND of the main switching device reaches 0A.The discharge current of the resonating condenser flows through the primary coil and returns energy to the input. Adjustment of the CR time constant applied to the Z/C pin (see diagram at right) allows the main switching device to be turned on at the trough of the damping voltage waveform, thus permitting a reduction in turn-on losses.In a circuit using partial resonance, the energy stored in the resonating condenser during the OFF period of the main switching device is returned to the input, thus permitting a reduction in turn-on losses. This allows the connection of a large-capacity condenser between the collector and GND of the main switching device, and thus permits a reduction in noise.The use of partial resonance is effective in permitting a simple circuit configuration with improved efficiency andnoise reduction.3.4 Standby Mode Control (patent applied for)The MR2000 Series is able to switch between two methodsof output voltage control - normal operation and the standbymode, in a single power supply.The standby mode supported by this IC employs the burst method for intermittent operation under light loads to reduce oscillation frequency and switching losses, and is effective in reducing the standby input voltage undermicro-loads.A unique characteristic of this IC is the use of the burstmode for intermittent operation without stopping IC control, and thus minimizing output ripple. The Z/C pin is clamped to a voltage of 4.5V (typical) or less by an external signal to allow selection of standby modecontrol. The standby mode is cleared (ie restored to thenormal mode) by clearing the clamp voltage on the Z/C pin, and applying a voltage of 4.5V (typical) or higher.In normal operation the ON range of the main switching device is controlled in a linear manner in relation to voltage variation at the F/B pin, while in standby mode operation the Emitter/OCL pin current detection threshold value isswitched from 0.6V for the normal mode to 0.05V for thestandby mode.The collector current is fixed at a peak value by the currentdetection threshold value, and the burst mode is selected.Burst mode control is such that oscillation occurs when the voltage at the F/B pin is 1.8V (typical) or higher, and isstopped when this voltage is 0.8V (typical) or lower.As output voltage control in the standby mode fixes thedrain current peak value for each oscillation cycle, the dutyratio of the oscillating and non-oscillating intervals is varied to ensure a constant voltage.3.5 Output Voltage Control (normal operation)The MR2000 Series controls output voltage with the ON range proportional to the voltage at the F/B pin.When the voltage at the F/B pin is 1.5V the ON range is 0µs, and is controlled in a linear manner so that when the voltage is 4.5V the ON range is 25µs. A current of 200µA=IF/B (typical) flows at the F/B pin, and the impedance of the photocoupler transistor connected externally between the F/B pin and GND is varied with the control signal from the secondary output detection circuit, thus controlling the ON range of the main switching device to produce a constant voltage.The maximum ON range is adjusted by setting the maximum value for the voltage at the F/B pin using a resistor connected externally between the F/B pin and GND.3.6 Soft Drive Circuit (patent applied for)The MR2000 Series supplies the main switching device gate drive voltage from two separate drive circuits.A voltage exceeding the threshold value for the main switching device is supplied from the first drive circuit at the leading edge of the drive voltage waveform to switch on the main switching device with the optimum timing.The drive voltage is then supplied gradually by the second drive circuit (see Fig.3.9).Supply of drive voltage in this manner reduces drive losses, as well as reducing noise due to gate charge current and discharge current when the resonating condenser is switched on.3.7 Circuit for Load ShortsThe MR2000 Series is designed so that when droop occurs under excessive load, output voltage drops, and control coil voltage drops in proportion.When the control coil voltage falls below 4.5V (typical) the standby mode is selected and the Emitter/OCL pin threshold voltage changes from 0.6V to 0.05V, thus limiting the collector current to approximately 1/10th of its previous value.This design permits a reduction in the stress on the MR2000 Series IC in the case of a load short, and control of the short-circuit current in the secondary diode and load circuit.3.8 Collector Pin (pin 7)The collector pin on the main switching device.The transformer is designed, and the resonating condenser adjusted, to ensure that V CE(max) is less than 900V.Depending upon input conditions, the collector pin may be subjected to reverse bias for a period during partial resonance.This IC employs an ultra high-speed IGBT in the main switching device. This device differs from MOSFET devices in that it has no body diode structure, thus requiring connection of an external high-speed diode between the Collector and Emitter/OCL pins.3.9 Thermal Shut-down Circuit (TSD)The MR2000 Series incorporates a thermal shut-down circuit.The onboard IC is latched at 150°C (typical) and oscillation is then stopped.Unlatch is achieved by momentarily dropping the voltage at the V cc pin to V UL (unlatch voltage) or lower.3.10 Over-voltage Protection Circuit (OVP)The MR2000 Series incorporates an over-voltage protection circuit (OVP).Latching occurs when the control coil voltage exceeds 20V (typical), and secondary output over-voltage protection then operates indirectly.Unlatch is achieved in the same manner as for the overheat protection circuit.3.11 Malfunction Prevention Circuit (patent applied for)The use of current-critical operation in the MR2000 Series ensures that the main transformer does not become saturated provided the droop setting is optimized.On the other hand, at start-up, and in the case of a load short, the output voltage is very much less than the set voltage.As the control coil voltage is proportional to the output voltage it also reaches an extremely small value, and the on-trigger timing may be incorrectly detected due to the ringing voltage while the device is OFF and switched on before the current-critical point.To counter this problem, the MR2000 Seriesincorporates a circuit to prevent on-trigger malfunction at start-up, and in the case of a load short. This function disables the on-trigger for a period of 2.7μs (typical) after the main switching device in the IC is switched OFF (on-dead time). This prevents incorrect detection due to the ringing voltage while the device is OFF.This design permits detection of the point at which the transformer secondary current is 0A at start-up, and in the case of a load short. The main switching device is then switched on at this point, allowing abnormal oscillation to be controlled.3.12 Over-current Protection CircuitA current detection resistor is connected between theEmitter/OCL pin and GND to detect current betweenthe emitter of the main switching device and the emitter current detection pin.During stable operation the main switching devicecurrent is limited by pulse-by-pulse operation with the0.6V threshold value.The leading edge clamp function preventsmalfunctioning and thus prevents incorrect detection atturn-on.During standby, the 50mV threshold value is selected and the oscillation noise from the transformer due to burst oscillation is reduced.V O NGND5.2 Main Transformer Design ProcedureThis design procedure provides an example of an electrical design procedure.Ensure that design of insulation materials, insulation configuration, and structure are in accordance with the necessary safety standards as determined by the relevant authorities.5.2.1 Standard Design ConditionsAbbreviation Unit ReferencevalueMinimum input voltage V AC(min) V ― Rated output voltage V o V ― Rated output current I o A ― Maximum output current I o(max) A ― Efficiencyη0.80～0.85Minimum oscillation frequency f (min) kHz 25k ～50kHz Duty ratio D 0.50～0.70 Control coil voltageV NC V 15～17V Effective cross-sectional area of transformer core A e mm 2― Magnetic flux density variation ΔB mT 250～320mTCoil current densityα A/mm 24～6A/mm 2Note that the above values are for reference only, and should be adjusted to suit load conditions.ReexaminationgReview transformer core size and oscillation frequency and redesign if I g is 1mm or greater.V FNC is the control coil voltage rectification diode forward voltage.The reference value for determining the control coil voltage V NC(min) is 15V to 17V.If the V NC(min) value is too small, start-up characteristics may deteriorate and start-up may become difficult. If the V NC(min) value is too large, the over-voltage latch stop voltage V OP is able to be reached easily. Check the V NC(min) voltage in an actual circuit during the design process to determine its optimum value.A NC C5.3 Main Transformer Design Examples5.3.1 Initial SetupInput voltage AC90～276V V O1：DC135V, 0.45A Efficiency 85% V O2：DC35V,0.40ARated output V O3：DC16V,0.40ATotal output 81.2W Oscillationfrequency at droop 29.6kHzDroop output110.36W (rated output x 1.36) Duty ratioT ON /T=0.655P on(max) is s or less. L °C isq μs.q andS1S2S35.4 Selection of Constants for Peripheral ComponentsT j(max) for the MR Series is 150°C.As operation of the MR Series is accompanied by an increase in temperature associated with power losses, it is necessary to consider the type of heat sink to be used. While a design which ensures that T j(max) is not exceeded is of absolute importance, the overheat protection function (T SD =150°C (typical)) must be also considered in any design. The extent to which T j is derated in a design is therefore extremely important in improving reliability.The majority of power losses during operation of the MR Series are associated with the internal MOSFET.If the majority of power losses are considered as ON losses, they may be expressed by the following equation.P D =V DS ×I DThe temperature increase (ΔT j ) due to power losses (P D ) is expressed as,ΔT j +T a ≦T j(max)and if T SD =150°C (typical) and T SD(min)=120°C are assumed, P D is limited so that the following equation is satisfied.ΔT j +T a ≦T SD(min)T j may be calculated as follows using the thermal resistance θja .T j =( P D ×θja ) +T aθja is the thermal resistance in the vicinity of the junction, and is expressed as follows.θja =θjc +θcf +θfaThermal shutdown (TSD) is a protective function which stops and latches operation at 150°C in the event of abnormal heating of the MR1520. Circuit design therefore requires a cooling design in which temperature has been sufficiently derated. Shindengen recommends that cooling design be such that case temperature does not exceed 100°C.6.1 Junction Temperature and Power Losses 6.2 Junction Temperature and Thermal Resistance Abbreviation UnitThermal resistance between junction and vicinity. θja ℃/WThermal resistance between junction and case. θjc ℃/WThermal resistance between case and fins(contact thermal resistance).θcf ℃/W Thermal resistance between case and fins(contact thermal resistance).θfa ℃/W 6.3 Cautions for Cooling Design。
ZSPM9000Al1R中文资料(ZMDI)中文数据手册「EasyDatasheet - 矽搜」
lm2904中文资料
lm2904中文资料LM2439 视频信号输出集成电路LM2453 视频信号输出集成电路LM2577 稳压集成电路LM2595 直流变换集成电路LM270H 自动增益及静噪控制集成电路LM2808N 伴音中频放大、鉴频及功率放大集成电路LM2904 双运算放大集成电路LM3065N 伴音中频放大、鉴频及前置放大集成电路LM3089 调频中频放大集成电路LM311N 电压比较运放集成电路LM317T 三端电源稳压1.5A集成电路LM324 四运算放大集成电路LM324M 四运算放大集成电路LM3361 解调集成电路LM33T 三端电源稳压-26V集成电路LM358 双运算放大集成电路LM358PS-T1 双运算放大集成电路LM3656 伴音中频放大、鉴频及前置放大集成电路LM377 双声道音频功率放大集成电路LM378 双声道音频功率放大集成电路LM380 场扫描输出集成电路LM381 运算放大集成电路LM382 宽带放大集成电路LM384 音频功率放大集成电路LM386 音频功率放大集成电路LM387 宽带放大集成电路LM3875T 音频功率放大集成电路LM3886 音频功率放大集成电路LM3915 发光二极管十位显示驱动集成电路LM399 基准稳压集成电路LM4500A 调频立体声解码集成电路LM4610 音调、音量、平衡调节集成电路LM4765 双声道音频功率放大30W×2集成电路LM741CN 运算放大集成电路LM79052 三端电源稳压-5.2V/1A集成电路LM8915N 显示驱动集成电路LN5241RA89 显示驱动集成电路LP62S512AX-70LLT 存储集成电路LPUVCP-96 端口功能扩展集成电路LR37632 伺服集成电路LR381641 主轴、字符控制集成电路LS0072 变音集成电路LSC4350 屏幕显示控制集成电路LSC4584P2 屏幕显示控制集成电路LT1074 开关电源稳压集成电路LT1109 升压稳压集成电路LTC1147 直流变换集成电路LTC1148 直流变换集成电路LTV1817 光电耦合集成电路LUKS-5140-M2 微处理集成电路LV1011 人工智能处理集成电路LV1100 音频信号处理集成电路LVA501 视频信号处理集成电路LVA521 制式切换集成电路M11B416256A 存储集成电路M1418VVW 微处理集成电路M2063SP 制式转换集成电路M208 系统控制集成电路M24C08 存储集成电路M24C128-WMN6 存储集成电路M27V201-200N6 中文字库集成电路M28F101AVPAD 存储集成电路M3004LAB1 红外遥控信号发射集成电路M32L1632512A 存储集成电路M34300-012SP 微处理集成电路M34300-628SP 微处理集成电路M34300M4-012SP 微处理集成电路M34300N4-011SP 微处理集成电路M34300N4-012SP 微处理集成电路M34300N4-555SP 微处理集成电路M34300N4-567SP 微处理集成电路M34300N4-584SP 微处理集成电路M34300N4-587SP 微处理集成电路M34300N4-628SP 微处理集成电路M34300N4-629SP 微处理集成电路M34300N4-657SP 微处理集成电路M34302M8-612SP 微处理集成电路M37100M8-616SP 微处理集成电路M37102M8-503SP 微处理集成电路M37103M4-750SP 微处理集成电路M37201M6 微处理集成电路M37204M8-852SP 微处理集成电路M37210M2-609SP 微处理集成电路M37210M3-010SP 微处理集成电路M37210M3-550SP 微处理集成电路M37210M3-603SP 微处理集成电路M37210M3-800SP 微处理集成电路M37210M3-901SP 微处理集成电路M37210M3-902SP 微处理集成电路M37210M4-650SP 微处理集成电路M37210M4-688微处理集成电路M37210M4-705SP 微处理集成电路M37210M4-786SP 微处理集成电路M37211M2-604SP 微处理集成电路M37211M2-609SP 微处理集成电路。
LM2904DR,LM2904DR,LM2904DR,LM2904DGKR,LM2904DGKR,LM2904DGKR,LM258DR,LM258DR, 规格书,Datasheet 资料
Low Input Bias and Offset Parameters:− Input Offset Voltage ...3mV TypA Versions ...2mV Typ− Input Offset Current ...2 nA Typ − Input Bias Current ...20 nA TypA Versions ...15 nA TypD Differential Input Voltage Range Equal to Maximum-Rated Supply Voltage ...32V (26 V for LM2904)D Open-Loop Differential Voltage Amplification ...100 V/mV Typ DInternal Frequency Compensationdescription/ordering information These devices consist of two independent,high-gain frequency-compensated operational amplifiers designed to operate from a singlesupply over a wide range of voltages. Operation from split supplies also is possible if the difference between the two supplies is 3 V to 32 V (3 V to 26 V for the LM2904), and V CC is at least 1.5 V more positive than the input common-mode voltage. The low supply-current drain is independent of the magnitude of the supplyvoltage.Applications include transducer amplifiers, dc amplification blocks, and all the conventional operational amplifier circuits that now can be implemented more easily in single-supply-voltage systems. For example,these devices can be operated directly from the standard 5-V supply used in digital systems and easily can provide the required interface electronics without additional ±5-V supplies.Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.PRODUCTION DATA information is current as of publication d ate.Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.3212019910111213456781817161514NC 2OUT NC 2IN−NCNC 1IN−NC 1IN+NCLM158, LM158A ...FK PACKAGE(TOP VIEW)N C 1O U T N C N CN CN C G N D N C C C +V 2I N +NC − No internal connectionOn products compliant to MIL-PRF-38535, all parameters are tested unless otherwise noted . On all other prod ucts, prod uction processing does not necessarily include testing of all parameters.ORDERING INFORMATION {T AV IO max AT 25°CMAX TESTED V CCPACKAGE }ORDERABLEPART NUMBER TOP-SIDE MARKING PDIP (P)Tube of 50LM358P LM358P Tube of 75LM358D Reel of 2500LM358DR SOIC (D)Reel of 2500LM358DRG3LM358SOP (PS)Reel of 2000LM358PSR L3587 mV30 VTube of 150LM358PW Reel of 2000LM358PWR °°CTSSOP (PW)Reel of 2000LM358PWRG3L3580C to 70MSOP/VSSOP (DGK)Reel of 2500LM358DGKR M5_§PDIP (P)Tube of 50LM358AP LM358AP SOIC (D)Tube of 75LM358AD 3mV 30V SOIC (D)Reel of 2500LM358ADR LM358A 3 mV30 VTSSOP (PW)Tube of 150LM358APW TSSOP (PW)Reel of 2000LM358APWR L358A MSOP/VSSOP (DGK)Reel of 2500LM358ADGKR M6_§PDIP (P)Tube of 50LM258P LM258P Tube of 75LM258D Reel of 2500LM258DR 5 mV30 VSOIC (D)Reel of 2500LM258DRG3LM258−25°°MSOP/VSSOP (DGK)Reel of 2500LM258DGKR M2_§25C to 85CPDIP (P)Tube of 50LM258AP LM258AP 3mV 30V SOIC (D)Tube of 75LM258AD 3 mV30 VSOIC (D)Reel of 2500LM258ADR LM258A MSOP/VSSOP (DGK)Reel of 2500LM258ADGKR M3_§PDIP (P)Tube of 50LM2904P LM2904P Tube of 75LM2904D Reel of 2500LM2904DR SOIC (D)Reel of 2500LM2904DRG3LM2904SOP (PS)Reel of 2000LM2904PSR L29047 mV26 VTube of 150LM2904PW −40°°Reel of 2000LM2904PWR 40C to 125CTSSOP (PW)Reel of 2000LM2904PWRG3L2904MSOP/VSSOP (DGK)Reel of 2500LM2904DGKR MB_§7mV 32V SOIC (D)Reel of 2500LM2904VQDR L2904V 7 mV 32 V TSSOP (PW)Reel of 2000LM2904VQPWR L2904V 2mV 32V SOIC (D)Reel of 2500LM2904AVQDR L2904AV 2 mV 32 V TSSOP (PW)Reel of 2000LM2904AVQPWR L2904AV 5mV 30V CDIP (JG)Tube of 50LM158JG LM158JG 55°C to 125°C5 mV30 V LCCC (FK)Tube of 55LM158FK LM158FK −55C to 1252mV 30V CDIP (JG)Tube of 50LM158AJG LM158AJG 2 mV30 VLCCC (FK)Tube of 55LM158AFKLM158AFK†For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at .‡Package drawings, thermal data, and symbolization are available at /packaging.§The actual top-side marking has one additional character that designates the wafer fab/assembly site.symbol (each amplifier)IN+IN−OUTschematic (each amplifier)V CC+OUTGND (or V CC−)IN−IN+Epi-FET Diodes Resistors Transistors CapacitorsCOMPONENT COUNT 127512absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†LM158, LM158ALM258, LM258ALM358, LM358ALM2904VLM2904UNITSupply voltage, V CC (see Note 1)±16 or 32±13 or 26V Differential input voltage, V ID (see Note 2)±32±26V Input voltage, V I (either input)−0.3 to 32−0.3 to 26V Duration of output short circuit (one amplifier) to groundat (or below) 25°C free-air temperature (V CC≤ 15 V) (see Note 3)Unlimited UnlimitedD package9797DGK package172172q P package8585°C/W Package thermal impedance, JA (see Notes 4 and 5)PS package9595PW package149149Package thermal impedance q(see Notes6and7)FK package 5.61C/WPackage thermal impedance, JC (see Notes 6 and 7)JG package14.5°LM158, LM158A−55 to 125Operating free air temperature range T LM258, LM258A−25 to 85Operating free-air temperature range, T ALM358, LM358A0 to 70°CLM2904−40 to 125−40 to 125 Operating virtual junction temperature, T J150150°C Case temperature for 60 seconds FK package260°C Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds JG package300300°C Storage temperature range, T stg−65 to 150−65 to 150°C†Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.NOTES: 1.All voltage values, except differential voltages and V CC specified for measurement of I OS, are with respect to the network ground terminal.2.Differential voltages are at IN+ with respect to IN−.3.Short circuits from outputs to V CC can cause excessive heating and eventual destruction.4.Maximum power dissipation is a function of T J(max), q JA, and T A. The maximum allowable power dissipation at any allowableambient temperature is P D = (T J(max) − T A)/q JA. Operating at the absolute maximum T J of 150°C can affect reliability.5.The package thermal impedance is calculated in accordance with JESD 51-7.6.Maximum power dissipation is a function of T J(max), q JC, and T C. The maximum allowable power dissipation at any allowable casetemperature is P D = (T J(max) − T C)/q JC. Operating at the absolute maximum T J of 150°C can affect reliability.7.The package thermal impedance is calculated in accordance with MIL-STD-883.electrical characteristics at specified free-air temperature, V CC = 5 V (unless otherwise noted)†‡LM158LM258LM358PARAMETERTEST CONDITIONS T A MINTYP §MAXMINTYP §MAXUNITInput offset voltage V CC = 5 V to MAX,V 25°C 3537V IOInput offset voltage V IC = V ICR(min),V O = 1.4 VFull range 79mV a V IOAverage temperature coefficient ofinput offset voltage Full range 77µV/°CInput offset current =14V25°C 230250I IO Input offset current V O = 1.4 V Full range 100150nA a I IOAverage temperature coefficient ofinput offset current Full range 1010pA/°CInput bias current =14V 25°C −20−150−20−250I IBInput bias currentV O = 1.4 V Full range −300−500nACCommon-mode=5V to MAX 25°C0 to V CC − 1.50 to V CC − 1.5V ICR Common mode input voltage rangeV CC = 5 V to MAXFull range0 to V CC − 20 to V CC − 2VR L ≥ 2 k Ω25°C V CC − 1.5V CC − 1.5High-levelR L ≥ 10 k Ω25°C V OHHigh level output voltage =MAX R L = 2 k ΩFull range 2626Vp g V CC = MAX R L ≥ 10 k ΩFull range 27282728V OL Low-leveloutput voltage R L ≤ 10 k ΩFull range 520520mVLarge-signal V CC = 15 V, 1V to 11V 25°C 5010025100A VD differentialvoltage amplification V O = 1 V to 11 V,R L ≥2 k ΩFull range 2515V/mV CMRR Common-mode rejection ratio V CC = 5 V to MAX,V IC = V ICR(min)25°C 70806580dB k SVR Supply-voltage rejection ratio (∆V DD /∆V IO )V CC = 5 V to MAX 25°C 6510065100dB V O1/V O2Crosstalk attenuationf = 1 kHz to 20 kHz 25°C 120120dBV CC = 15 V,1V 25°C −20−30−20−30Output current V ID = 1 V,V O = 0Source Full range −10−10I OOutput currentV CC = 15 V,1V25°C 10201020mAV ID = −1 V,V O = 15 VSink Full range 55I O Output current V ID = −1 V, V O = 200 mV 25°C 12301230µA I OS Short-circuit output current V CC at 5 V, GND at −5 V,V O = 025°C ±40±60±40±60mASupply current V O = 2.5 V, No load Full range 0.7 1.20.7 1.2I CCSupply current (two amplifiers)V CC = MAX, V O = 0.5 V,No loadFull range1212mA All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified. MAX V CC for testing purposes is 26 V for the LM2904 and 30 V for others.‡Full range is −55°C to 125°C for LM158, −25°C to 85°C for LM258, 0°C to 70°C for LM358, and −40°C to 125°C for LM2904.§All typical values are at T A= 25°C.electrical characteristics at specified free-air temperature, V CC = 5 V (unless otherwise noted)TEST CONDITIONS LM2904PARAMETERTEST CONDITIONS †T A ‡MINTYP §MAXUNITNon A devices 25°C 37Input offset voltage V CC = 5 V to MAX,V Non-A devices Full range 10V IOInput offset voltageV IC = V ICR(min), A suffix devices 25°C 12mVV O = 1.4 VA-suffix devicesFull range 4a VIOAverage temperature coefficient of input offset voltageFull range7µV/°CNon V device 25°C 250Input offset current 14VNon-V deviceFull range 300I IOInput offset currentV O = 1.4 V V suffix device 25°C 250nAV-suffix deviceFull range 150a IIOAverage temperature coefficientof input offset current Full range 10pA/°C Input bias current 14V 25°C −20−250I IBInput bias currentV O = 1.4 VFull range −500nACommon-mode input voltage 5V to MAX 25°C0 to V CC − 1.5V ICRCommon mode input voltage rangeV CC = 5 V to MAXFull range0 to V CC − 2VR L ≥ 10 k Ω25°CV CC − 1.5V R L = 2 k ΩFull range 22V High-level output voltage CC = MAX,Non-V device R L ≥ 10 k ΩFull range 2324VOHHigh level output voltageV R L = 2 k ΩFull range 26CC = MAX,V-suffix deviceR L ≥ 10 k ΩFull range 2728V OL Low-level output voltage R L ≤ 10 k ΩFull range 520mV Large-signal differential V 25°C 25100A VD Large signal differential voltage amplificationCC = 15 V, V O = 1 V to 11 V,R L ≥2 k ΩFull range 15V/mV Common mode rejection ratio Non-V device 25°C 5080CMRR Common-mode rejection ratio V CC = 5 V to MAX,V IC = V ICR(min)V-suffix device25°C 6580dB k SVR Supply-voltage rejection ratio (∆V DD /∆V IO )V CC = 5 V to MAX 25°C 65100dB V O1/V O2Crosstalk attenuationf = 1 kHz to 20 kHz 25°C120dB 25°C −20−30mA V CC = 15 V,V ID = 1 V, V O = 0SourceFull range −10mA Output current V CC = 15 V,1V 25°C1020mA I OOutput currentV ID = −1 V,V O = 15 V SinkFull range 5mA V = −1 V,Non-V device 25°C 30ID = 1 V,V O = 200 mVV-suffix device25°C 1240µA I OS Short-circuit output current V CC at 5 V, GND at −5 V, V O = 025°C ±40±60mA Supply current (two amplifiers)V O = 2.5 V, No loadFull range 0.7 1.2I CCSupply current (two amplifiers)V CC = MAX, V O = 0.5 V, No loadFull range12mA†All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified. MAX V CC fortesting purposes is 26 V for the LM2904, 32 V for the LM2904V, and 30 V for others.‡Full range is −55°C to 125°C for LM158, −25°C to 85°C for LM258, 0°C to 70°C for LM358, and −40°C to 125°C for LM2904.§All typical values are at T A= 25°C.electrical characteristics at specified free-air temperature, V CC = 5 V (unless otherwise noted)TEST CONDITIONS LM158A LM258APARAMETER TEST CONDITIONS†T A‡MIN TYP§MAX MIN TYP§MAXUNITInput offset voltage V CC = 5 V to 30 V,V25°C223V IO Input offset voltage V IC = V ICR(min),V O = 1.4 V Full range44mVa VIO Averagetemperaturecoefficient ofinput offset voltageFull range715*715µV/°C Input offset current=14V25°C210215I IO Input offset current V O = 1.4 VFull range3030nAa IIO Averagetemperaturecoefficient ofinput offset currentFull range1020010200pA/°C Input bias current=14V25°C−15−50−15−80I IB Input bias current V O = 1.4 VFull range−100−100nAC Common-mode=30V25°C0 toV CC − 1.50 toV CC − 1.5V ICR Common modeinput voltage rangeV CC = 30 VFull range0 toV CC − 20 toV CC − 2V High levelR L≥ 2 kΩ25°C V CC − 1.5V CC − 1.5High-leveloutput voltage V=30VR L= 2 kΩFull range2626V OH output voltageCC = 30 V RL≥ 10 kΩFull range27282728VV OL Low-leveloutput voltageR L≤ 10 kΩFull range520520mV Large-signal V CC = 15 V,1V to11V25°C5010050100A VD differentialvoltage amplification V O = 1 V to 11 V,R L≥2 kΩFull range2525V/mVCMRR Common-moderejection ratio25°C70807080dBk SVR Supply-voltagerejection ratio(∆V DD/∆V IO)25°C6510065100dBV O1/V O2Crosstalkattenuationf = 1 kHz to 20 kHz25°C120120dBV CC = 15 V,1V25°C−20−30−60−20−30−60V ID = 1 V,V O = 0SourceFull range−10−10I O Output current V CC = 15 V,1V 25°C10201020mAV ID = −1 V, V O = 15SinkFull range55V ID = −1 V, V O = 200 mV25°C12301230µAI OS Short-circuit outputcurrentV CC at 5 V, GND at −5 V,V O = 025°C±40±60±40±60mA Supply current(twoV O = 2.5 V, No load Full range0.7 1.20.7 1.2I CC Supply current (twoamplifiers)V CC = MAX, V O = 0.5 V,No loadFull range1212mA*On products compliant to MIL-PRF-38535, this parameter is not production tested.†All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified. MAX V CC for testing purposes is 26 V for LM2904 and 30 V for others.‡Full range is −55°C to 125°C for LM158A, −25°C to 85°C for LM258A, and 0°C to 70°C for LM358A.§All typical values are at T A = 25°C.electrical characteristics at specified free-air temperature, V CC = 5 V (unless otherwise noted)TEST CONDITIONS LM358A PARAMETERTEST CONDITIONS †T A ‡MINTYP §MAXUNIT Input offset voltage V 25°C 23V IO Input offset voltageCC = 5 V to 30 V,V IC = V ICR(min), V O = 1.4 VFull range 5mV a V IOAverage temperature coefficient of input offset voltage Full range720µV/°C Input offset current 14V25°C 230I IO Input offset currentV O = 1.4 V Full range 75nA a IIO Average temperature coefficient of input offset current Full range10300pA/°C Input bias current 14V25°C −15−100I IB Input bias currentV O = 1.4 V Full range −200nACommon mode input voltage range V 30V25°C0 to V CC − 1.5V ICRCommon-mode input voltage rangeCC = 30 V Full range0 to V CC − 2VR L ≥ 2 k Ω25°CV CC − 1.5High-level output voltage 30V R L = 2 k ΩFull range 26V OH High level output voltage V CC = 30 V R L ≥ 10 k ΩFull range 2728V V OL Low-level output voltage R L ≤ 10 k ΩFull range 520mV Large-signal differential V 25°C 25100A VD Large signal differential voltage amplificationCC = 15 V, V O = 1 V to 11 V,R L ≥2 k ΩFull range 15V/mV CMRR Common-mode rejection ratio 25°C 6580dB k SVR Supply-voltage rejection ratio (∆V DD /∆V IO )25°C65100dB V O1/V O2Crosstalk attenuationf = 1 kHz to 20 kHz 25°C 120dBV CC = 15 V,1V 25°C −20−30−60V ID = 1 V,V O = 0SourceFull range −10I OOutput currentV CC = 15 V,1V 25°C1020mAV ID = −1 V,V O = 15 VSinkFull range 5V ID = −1 V, V O = 200 mV25°C 30µA I OS Short-circuit output current V CC at 5 V, GND at −5 V, V O = 025°C ±40±60mA Supply current (two amplifiers)V O = 2.5 V, No loadFull range 0.7 1.2I CCSupply current (two amplifiers)V CC = MAX, V O = 0.5 V, No loadFull range12mA†All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified. MAX V CC fortesting purposes is 26 V for LM2904 and 30 V for others.‡Full range is −55°C to 125°C for LM158A, −25°C to 85°C for LM258A, and 0°C to 70°C for LM358A.§All typical values are at T A= 25°C.operating conditions, V CC = ±15 V, T A = 25°CPARAMETER TEST CONDITIONS TYP UNITSR Slew rate at unity gain R L= 1 MΩ, C L= 30 pF, V I= ±10 V(see Figure 1)0.3V/µs B1Unity-gain bandwidth R L= 1 MΩ, C L= 20 pF (see Figure 1)0.7MHz V n Equivalent input noise voltageR S= 100 Ω, V I= 0 V, f = 1 kHz(see Figure 2)40nV/√HzV OFigure 1. Unity-Gain AmplifierV O900 ΩFigure 2. Noise-Test Circuit23-May-2012 PACKAGING INFORMATIONOrderable Device Status (1)Package Type PackageDrawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)Samples(Requires Login)5962-87710012A ACTIVE LCCC FK201TBD Call TI Call TI5962-8771001PA ACTIVE CDIP JG81TBD Call TI Call TI5962-87710022A ACTIVE LCCC FK201TBD Call TI Call TI5962-8771002PA ACTIVE CDIP JG81TBD Call TI Call TILM158AFKB ACTIVE LCCC FK201TBD POST-PLATE N / A for Pkg Type LM158AJG ACTIVE CDIP JG81TBD A42N / A for Pkg Type LM158AJGB ACTIVE CDIP JG81TBD A42N / A for Pkg Type LM158FKB ACTIVE LCCC FK201TBD POST-PLATE N / A for Pkg Type LM158JG ACTIVE CDIP JG81TBD A42N / A for Pkg Type LM158JGB ACTIVE CDIP JG81TBD A42N / A for Pkg Type LM258AD ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258ADE4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258ADG4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258ADGKR ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258ADGKRG4ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258ADR ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258ADRE4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258ADRG4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM258AP ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM258APE4ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM258D ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258DE4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM23-May-2012Orderable Device Status (1)Package Type PackageDrawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)Samples(Requires Login)LM258DG4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258DGKR ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258DGKRG4ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258DR ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258DRE4ACTIVE SOIC D8Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258DRG3ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU SN Level-1-260C-UNLIMLM258DRG4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM258P ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM258PE4ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM2904AVQDR ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904AVQDRG4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904AVQPWR ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904AVQPWRG4ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904D ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904DE4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904DG4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904DGKR ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904DGKRG4ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904DR ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM23-May-2012Orderable Device Status (1)Package Type PackageDrawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)Samples(Requires Login)LM2904DRE4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904DRG3ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU SN Level-1-260C-UNLIMLM2904DRG4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2904P ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM2904PE4ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM2904PSR ACTIVE SO PS82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904PSRE4ACTIVE SO PS82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904PSRG4ACTIVE SO PS82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904PW ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904PWE4ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904PWG4ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2904PWLE OBSOLETE TSSOP PW8TBD Call TI Call TILM2904PWR ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904PWRG3ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU SN Level-1-260C-UNLIM LM2904QD OBSOLETE SOIC D8TBD Call TI Call TILM2904QDR ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904QDRG4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2904QP OBSOLETE PDIP P8TBD Call TI Call TILM2904VQDR ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904VQDRG4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM23-May-2012Orderable Device Status (1)Package Type PackageDrawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)Samples(Requires Login)LM2904VQPWR ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904VQPWRG4ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358AD ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358ADE4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358ADG4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358ADGKR ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358ADGKRG4ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358ADR ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358ADRE4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358ADRG4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM358AP ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM358APE4ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM358APW ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358APWE4ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358APWG4ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358APWR ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358APWRE4ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358APWRG4ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358D ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM23-May-2012Orderable Device Status (1)Package Type PackageDrawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)Samples(Requires Login)LM358DE4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358DG4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358DGKR ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358DGKRG4ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358DR ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358DRE4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358DRG3ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU SN Level-1-260C-UNLIMLM358DRG4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM358P ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM358PE3ACTIVE PDIP P850Pb-Free (RoHS)CU SN N / A for Pkg Type LM358PE4ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM358PSLE OBSOLETE SO PS8TBD Call TI Call TILM358PSR ACTIVE SO PS82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358PSRE4ACTIVE SO PS82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358PSRG4ACTIVE SO PS82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358PW ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358PWE4ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358PWG4ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM358PWLE OBSOLETE TSSOP PW8TBD Call TI Call TILM358PWR ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM23-May-2012Orderable Device Status (1)Package Type PackageDrawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)Samples(Requires Login)LM358PWRE4ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358PWRG3ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU SN Level-1-260C-UNLIMLM358PWRG4ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check /productcontent for the latest availability information and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.OTHER QUALIFIED VERSIONS OF LM258A, LM2904 :•Automotive: LM2904-Q1•Enhanced Product: LM258A-EP。
LM2904中文资料_数据手册_参数
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright 2004, Texas Instruments Incorporated On products compliant to MILĆPRFĆ38535, all parameters are tested unless otherwise noted. On all other products, production processing does not necessarily include testing of all parameters.
LM358D LM358DR
LM358
0°C to 70°C
7 mV
30 V
SOP (PS)
TSSOP (PW) MSOP/VSSOP (DGK) PDIP (P)
Reel of 2000 Tube of 150 Reel of 2000 Reel of 2500 Tube of 50
LM358PSR LM358PW LM358PWR LM358DGKR LM358AP
Tube of 50 Tube of 55 Tube of 50 Tube of 55
2904_中文资料
PACKAGING INFORMATION Orderable DeviceStatus (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)LM2904AVQDRQ1ACTIVE SOIC D 82500Pb-Free (RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIM LM2904AVQPWRQ1ACTIVE TSSOP PW 82000None CU NIPDAU Level-1-250C-UNLIM LM2904QDRQ1ACTIVE SOIC D 82500Pb-Free (RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIM LM2904QPWRQ1ACTIVE TSSOP PW 82000None CU NIPDAU Level-1-250C-UNLIM LM2904VQDRQ1ACTIVE SOIC D 82500Pb-Free (RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIM LM2904VQPWRQ1ACTIVE TSSOP PW 82000None CU NIPDAU Level-1-250C-UNLIM (1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan -May not be currently available -please check /productcontent for the latest availability information and additional product content details.None:Not yet available Lead (Pb-Free).Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Green (RoHS &no Sb/Br):TI defines "Green"to mean "Pb-Free"and in addition,uses package materials that do not contain halogens,including bromine (Br)or antimony (Sb)above 0.1%of total product weight.(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.PACKAGE OPTION ADDENDUM 4-Mar-2005Addendum-Page 1IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. T esting and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. T o minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI.Reproduction of information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for such altered documentation.Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. Following are URLs where you can obtain information on other Texas Instruments products and application solutions:Products ApplicationsAmplifiers Audio /audioData Converters Automotive /automotiveDSP Broadband /broadbandInterface Digital Control /digitalcontrolLogic Military /militaryPower Mgmt Optical Networking /opticalnetwork Microcontrollers Security /securityTelephony /telephonyVideo & Imaging /videoWireless /wirelessMailing Address:Texas InstrumentsPost Office Box 655303 Dallas, Texas 75265Copyright 2005, Texas Instruments Incorporated。
LM2904DGKR中文资料
PACKAGING INFORMATIONOrderable Device Status(1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)5962-87710012A ACTIVE LCCC FK 201None POST-PLATE Level-NC-NC-NC 5962-8771001PA ACTIVE CDIP JG 81None A42SNPB Level-NC-NC-NC 5962-87710022A ACTIVE LCCC FK 201None POST-PLATE Level-NC-NC-NC 5962-8771002PA ACTIVE CDIP JG 81None A42SNPB Level-NC-NC-NC LM158AFKB ACTIVE LCCC FK 201None POST-PLATE Level-NC-NC-NCLM158AJG ACTIVE CDIP JG 81None A42SNPB Level-NC-NC-NC LM158AJGB ACTIVE CDIP JG 81None A42SNPB Level-NC-NC-NC LM158FKB ACTIVE LCCC FK 201None POST-PLATE Level-NC-NC-NCLM158JG ACTIVE CDIP JG 81None A42SNPB Level-NC-NC-NC LM158JGB ACTIVE CDIP JG 81None A42SNPB Level-NC-NC-NC LM258AD ACTIVE SOIC D 875Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LM258ADGKR ACTIVE MSOP DGK 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR LM258ADR ACTIVE SOIC D 82500Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LM258AP ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU Level-NC-NC-NC LM258D ACTIVE SOIC D 875Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LM258DGKR ACTIVE MSOP DGK 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR LM258DR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM258P ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU Level-NC-NC-NC LM2904AVQDR ACTIVE SOIC D 82500Pb-Free (RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIM LM2904AVQPWRACTIVE TSSOP PW 82000None CU NIPDAU Level-1-250C-UNLIM LM2904D ACTIVE SOIC D 875Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LM2904DGKR ACTIVE MSOP DGK 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR LM2904DR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2904P ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU Level-NC-NC-NC LM2904PSR ACTIVE SO PS 82000Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LM2904PW ACTIVE TSSOP PW 8150Pb-Free (RoHS)CU NIPDAU Level-1-250C-UNLIM LM2904PWLE OBSOLETE TSSOP PW 8None Call TI Call TILM2904PWR ACTIVE TSSOP PW 82000Pb-Free (RoHS)CU NIPDAU Level-1-250C-UNLIM LM2904QD OBSOLETE SOIC D 8None Call TI Call TILM2904QDROBSOLETESOICD8Pb-Free (RoHS)CU NIPDAULevel-2-250C-1YEAR/Level-1-235C-UNLIMPACKAGE OPTION ADDENDUM4-Mar-2005Addendum-Page 1元器件交易网Orderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)LM2904QP OBSOLETE PDIP P8None Call TI Call TILM2904VQDR ACTIVE SOIC D82500Pb-Free(RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIMLM2904VQPWR ACTIVE TSSOP PW82000None CU NIPDAU Level-1-250C-UNLIMLM358AD ACTIVE SOIC D875Pb-Free(RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIMLM358ADGKR ACTIVE MSOP DGK82500Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEARLM358ADR ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358AP ACTIVE PDIP P850Pb-Free(RoHS)CU NIPDAU Level-NC-NC-NCLM358APW ACTIVE TSSOP PW8150Pb-Free(RoHS)CU NIPDAU Level-1-250C-UNLIMLM358APWR ACTIVE TSSOP PW82000Pb-Free(RoHS)CU NIPDAU Level-1-250C-UNLIMLM358D ACTIVE SOIC D875Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358DGKR ACTIVE MSOP DGK82500Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEARLM358DR ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358P ACTIVE PDIP P850Pb-Free(RoHS)CU NIPDAU Level-NC-NC-NCLM358PSLE OBSOLETE SO PS8None Call TI Call TILM358PSR ACTIVE SO PS82000Pb-Free(RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIMLM358PW ACTIVE TSSOP PW8150Pb-Free(RoHS)CU NIPDAU Level-1-250C-UNLIM LM358PWLE OBSOLETE TSSOP PW8None Call TI Call TILM358PWR ACTIVE TSSOP PW82000Pb-Free(RoHS)CU NIPDAU Level-1-250C-UNLIM(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan-May not be currently available-please check /productcontent for the latest availability information and additional product content details.None:Not yet available Lead(Pb-Free).Pb-Free(RoHS):TI's terms"Lead-Free"or"Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all6substances,including the requirement that lead not exceed0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Green(RoHS&no Sb/Br):TI defines"Green"to mean"Pb-Free"and in addition,uses package materials that do not contain halogens, including bromine(Br)or antimony(Sb)above0.1%of total product weight.(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it isprovided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.元器件交易网IMPORTANT NOTICETexas Instruments 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LM2904MX中文资料
LM158/LM258/LM358/LM2904Low Power Dual Operational AmplifiersGeneral DescriptionThe LM158series consists of two independent,high gain,internally frequency compensated operational amplifiers which were designed specifically to operate from a single power supply over a wide range of voltages.Operation from split power supplies is also possible and the low power supply current drain is independent of the magnitude of the power supply voltage.Application areas include transducer amplifiers,dc gain blocks and all the conventional op amp circuits which now can be more easily implemented in single power supply systems.For example,the LM158series can be directly operated off of the standard +5V power supply voltage which is used in digital systems and will easily provide the required interface electronics without requiring the additional ±15V power supplies.The LM358and LM2904are available in a chip sized pack-age (8-Bump micro SMD)using National’s micro SMD pack-age technology.Unique Characteristicsn In the linear mode the input common-mode voltage range includes ground and the output voltage can also swing to ground,even though operated from only a single power supply voltage.n The unity gain cross frequency is temperature compensated.n The input bias current is also temperature compensated.Advantagesn Two internally compensated op amps n Eliminates need for dual suppliesn Allows direct sensing near GND and V OUT also goes to GNDn Compatible with all forms of logicn Power drain suitable for battery operationFeaturesn Available in 8-Bump micro SMD chip sized package,(See AN-1112)n Internally frequency compensated for unity gain n Large dc voltage gain:100dBn Wide bandwidth (unity gain):1MHz (temperature compensated)n Wide power supply range:—Single supply:3V to 32V—or dual supplies:±1.5V to ±16Vn Very low supply current drain (500µA)—essentially independent of supply voltage n Low input offset voltage:2mVn Input common-mode voltage range includes ground n Differential input voltage range equal to the power supply voltagen Large output voltage swingVoltage Controlled Oscillator (VCO)00778723October 2005LM158/LM258/LM358/LM2904Low Power Dual Operational Amplifiers©2005National Semiconductor Corporation Absolute Maximum Ratings (Note 9)If Military/Aerospace specified devices are required,please contact the National Semiconductor Sales Office/Distributors for availability and specifications.LM158/LM258/LM358LM2904LM158A/LM258A/LM358ASupply Voltage,V +32V 26V Differential Input Voltage 32V 26V Input Voltage−0.3V to +32V−0.3V to +26V Power Dissipation (Note 1)Molded DIP 830mW 830mW Metal Can550mW Small Outline Package (M)530mW 530mWmicro SMD435mW Output Short-Circuit to GND (One Amplifier)(Note 2)V +≤15V and T A =25˚CContinuous Continuous Input Current (V IN <−0.3V)(Note 3)50mA 50mA Operating Temperature Range LM3580˚C to +70˚C −40˚C to +85˚CLM258−25˚C to +85˚C LM158−55˚C to +125˚C Storage Temperature Range −65˚C to +150˚C −65˚C to +150˚CLead Temperature,DIP (Soldering,10seconds)260˚C 260˚C Lead Temperature,Metal Can (Soldering,10seconds)300˚C 300˚CSoldering Information Dual-In-Line Package Soldering (10seconds)260˚C 260˚C Small Outline Package Vapor Phase (60seconds)215˚C 215˚C Infrared (15seconds)220˚C 220˚CSee AN-450“Surface Mounting Methods and Their Effect on Product Reliability”for other methods of soldering surface mount devices.ESD Tolerance (Note 10)250V250VElectrical CharacteristicsV +=+5.0V,unless otherwise statedParameter ConditionsLM158A LM358A LM158/LM258UnitsMin TypMax Min TypMax Min TypMax Input Offset Voltage (Note 5),T A =25˚C 122325mV Input Bias Current I IN(+)or I IN(−),T A =25˚C,20504510045150nA V CM =0V,(Note 6)Input Offset Current I IN(+)−I IN(−),V CM =0V,T A =25˚C 210530330nA Input Common-Mode V +=30V,(Note 7)V +−1.5V +−1.5V +−1.5VVoltage Range (LM2904,V +=26V),T A =25˚C Supply CurrentOver Full Temperature Range R L =∞on All Op Amps V +=30V (LM2904V +=26V)121212mA V +=5V0.51.20.51.20.51.2mAL M 158/L M 258/L M 358/L M 2904 2Electrical CharacteristicsV +=+5.0V,unless otherwise statedParameterConditionsLM358LM2904Units MinTyp Max MinTyp Max Input Offset Voltage (Note 5),T A =25˚C 2727mV Input Bias Current I IN(+)or I IN(−),T A =25˚C,4525045250nA V CM =0V,(Note 6)Input Offset Current I IN(+)−I IN(−),V CM =0V,T A =25˚C 550550nA Input Common-Mode V +=30V,(Note 7)V +−1.50V +−1.5VVoltage Range (LM2904,V +=26V),T A =25˚C Supply CurrentOver Full Temperature Range R L =∞on All Op Amps V +=30V (LM2904V +=26V)1212mA V +=5V0.51.20.51.2mAElectrical CharacteristicsV +=+5.0V,(Note 4),unless otherwise statedParameterConditionsLM158A LM358A LM158/LM258UnitsMin Typ MaxMin Typ MaxMin Typ MaxLarge Signal Voltage V +=15V,T A =25˚C,GainR L ≥2k Ω,(For V O =1V 501002510050100V/mVto 11V)Common-Mode T A =25˚C,708565857085dBRejection Ratio V CM =0V to V +−1.5V Power Supply V +=5V to 30V Rejection Ratio (LM2904,V +=5V 651006510065100dBto 26V),T A =25˚CAmplifier-to-Amplifier f =1kHz to 20kHz,T A =25˚C −120−120−120dBCoupling (Input Referred),(Note 8)Output CurrentSource V IN +=1V,204020402040mAV IN −=0V,V +=15V,V O =2V,T A =25˚C Sink V IN −=1V,V IN +=0VV +=15V,T A =25˚C,102010201020mAV O =2V V IN −=1V,125012501250µAV IN +=0VT A =25˚C,V O =200mV,V +=15VShort Circuit to Ground T A =25˚C,(Note 2),406040604060mA V +=15V Input Offset Voltage (Note 5)457mV Input Offset Voltage R S =0Ω7157207µV/˚CDriftInput Offset Current I IN(+)−I IN(−)3075100nA Input Offset Current R S =0Ω102001030010pA/˚C DriftInput Bias Current I IN(+)or I IN(−)401004020040300nA Input Common-Mode V +=30V,(Note 7)0V +−2V +−2V +−2VVoltage Range(LM2904,V +=26V)LM158/LM258/LM358/LM29043Electrical Characteristics(Continued)V +=+5.0V,(Note 4),unless otherwise statedParameterConditionsLM158A LM358A LM158/LM258UnitsMin TypMaxMin TypMaxMin TypMaxLarge Signal Voltage V +=+15V 251525V/mV Gain (V O =1V to 11V)R L ≥2k ΩOutput V OH V +=+30VR L =2k Ω262626V Voltage (LM2904,V +=26V)R L =10k Ω272827282728V Swing V OL V +=5V,R L =10k Ω520520520mV Output CurrentSource V IN +=+1V,V IN −=0V,102010201020mA V +=15V,V O =2V Sink V IN −=+1V,V IN +=0V,10155858mAV +=15V,V O =2VElectrical CharacteristicsV +=+5.0V,(Note 4),unless otherwise statedParameterConditionsLM358LM2904UnitsMin Typ MaxMin Typ MaxLarge Signal Voltage V +=15V,T A =25˚C,GainR L ≥2k Ω,(For V O =1V 2510025100V/mVto 11V)Common-Mode T A =25˚C,65855070dBRejection Ratio V CM =0V to V +−1.5V Power Supply V +=5V to 30V Rejection Ratio (LM2904,V +=5V 6510050100dBto 26V),T A =25˚CAmplifier-to-Amplifier f =1kHz to 20kHz,T A =25˚C −120−120dBCoupling (Input Referred),(Note 8)Output CurrentSource V IN +=1V,20402040mAV IN −=0V,V +=15V,V O =2V,T A =25˚C Sink V IN −=1V,V IN +=0VV +=15V,T A =25˚C,10201020mAV O =2V V IN −=1V,12501250µAV IN +=0VT A =25˚C,V O =200mV,V +=15VShort Circuit to Ground T A =25˚C,(Note 2),40604060mA V +=15V Input Offset Voltage (Note 5)910mV Input Offset Voltage R S =0Ω77µV/˚CDriftInput Offset Current I IN(+)−I IN(−)15045200nA Input Offset Current R S =0Ω1010pA/˚C DriftInput Bias Current I IN(+)or I IN(−)4050040500nA Input Common-Mode V +=30V,(Note 7)0V +−2V +−2VVoltage Range(LM2904,V +=26V)L M 158/L M 258/L M 358/L M 2904 4Electrical Characteristics(Continued) V+=+5.0V,(Note4),unless otherwise statedParameter ConditionsLM358LM2904Units Min Typ Max Min Typ MaxLarge Signal Voltage V+=+15V1515V/mVGain(V O=1V to11V)R L≥2kΩOutput V OH V+=+30V R L=2kΩ2622VVoltage(LM2904,V+=26V)R L=10kΩ27282324VSwing V OL V+=5V,R L=10kΩ5205100mVOutput Current Source V IN+=+1V,V IN−=0V,10201020mAV+=15V,V O=2VSink V IN−=+1V,V IN+=0V,5858mAV+=15V,V O=2VNote1:For operating at high temperatures,the LM358/LM358A,LM2904must be derated based on a+125˚C maximum junction temperature and a thermal resistance of120˚C/W for MDIP,182˚C/W for Metal Can,189˚C/W for Small Outline package,and230˚C/W for micro SMD,which applies for the device soldered in a printed circuit board,operating in a still air ambient.The LM258/LM258A and LM158/LM158A can be derated based on a+150˚C maximum junction temperature.The dissipation is the total of both amplifiers—use external resistors,where possible,to allow the amplifier to saturate or to reduce the power which is dissipated in the integrated circuit.Note2:Short circuits from the output to V+can cause excessive heating and eventual destruction.When considering short cirucits to ground,the maximum output current is approximately40mA independent of the magnitude of V+.At values of supply voltage in excess of+15V,continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction.Destructive dissipation can result from simultaneous shorts on all amplifiers.Note3:This input current will only exist when the voltage at any of the input leads is driven negative.It is due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode clamps.In addition to this diode action,there is also lateral NPN parasitic transistor action on the IC chip.This transistor action can cause the output voltages of the op amps to go to the V+voltage level(or to ground for a large overdrive)for the time duration that an input is driven negative.This is not destructive and normal output states will re-establish when the input voltage,which was negative,again returns to a value greater than−0.3V(at25˚C).Note4:These specifications are limited to−55˚C≤T A≤+125˚C for the LM158/LM158A.With the LM258/LM258A,all temperature specifications are limited to−25˚C≤T A≤+85˚C,the LM358/LM358A temperature specifications are limited to0˚C≤T A≤+70˚C,and the LM2904specifications are limited to−40˚C≤T A≤+85˚C.Note5:V O.1.4V,R S=0Ωwith V+from5V to30V;and over the full input common-mode range(0V to V+−1.5V)at25˚C.For LM2904,V+from5V to26V.Note6:The direction of the input current is out of the IC due to the PNP input stage.This current is essentially constant,independent of the state of the output so no loading change exists on the input lines.Note7:The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than0.3V(at25˚C).The upper end of the common-mode voltage range is V+−1.5V(at25˚C),but either or both inputs can go to+32V without damage(+26V for LM2904),independent of the magnitude of V+.Note8:Due to proximity of external components,insure that coupling is not originating via stray capacitance between these external parts.This typically can be detected as this type of capacitance increases at higher frequencies.Note9:Refer to RETS158AX for LM158A military specifications and to RETS158X for LM158military specifications.Note10:Human body model,1.5kΩin series with100pF.LM158/LM258/LM358/LM29045Typical Performance CharacteristicsInput Voltage RangeInput Current0077873400778735Supply Current Voltage Gain0077873600778737Open Loop Frequency Response Common-Mode Rejection Ratio0077873800778739L M 158/L M 258/L M 358/L M 2904 6Typical Performance Characteristics(Continued)Voltage Follower Pulse ResponseVoltage Follower Pulse Response (Small Signal)0077874000778741Large Signal Frequency Response Output Characteristics Current Sourcing0077874200778743Output Characteristics Current Sinking Current Limiting0077874400778745LM158/LM258/LM358/LM29047Typical Performance Characteristics(Continued)Input Current (LM2902only)Voltage Gain (LM2902only)0077874600778747Application HintsThe LM158series are op amps which operate with only a single power supply voltage,have true-differential inputs,and remain in the linear mode with an input common-mode voltage of 0V DC .These amplifiers operate over a wide range of power supply voltage with little change in performance characteristics.At 25˚C amplifier operation is possible down to a minimum supply voltage of 2.3V DC .Precautions should be taken to insure that the power supply for the integrated circuit never becomes reversed in polarity or that the unit is not inadvertently installed backwards in a test socket as an unlimited current surge through the result-ing forward diode within the IC could cause fusing of the internal conductors and result in a destroyed unit.Large differential input voltages can be easily accomodated and,as input differential voltage protection diodes are not needed,no large input currents result from large differential input voltages.The differential input voltage may be larger than V +without damaging the device.Protection should be provided to prevent the input voltages from going negative more than −0.3V DC (at 25˚C).An input clamp diode with a resistor to the IC input terminal can be used.To reduce the power supply current drain,the amplifiers have a class A output stage for small signal levels which converts to class B in a large signal mode.This allows the amplifiers to both source and sink large output currents.Therefore both NPN and PNP external current boost transis-tors can be used to extend the power capability of the basic amplifiers.The output voltage needs to raise approximately 1diode drop above ground to bias the on-chip vertical PNP transistor for output current sinking applications.For ac applications,where the load is capacitively coupled to the output of the amplifier,a resistor should be used,from the output of the amplifier to ground to increase the class A bias current and prevent crossover distortion.Where the load is directly coupled,as in dc applications,there is no crossover distortion.Capacitive loads which are applied directly to the output of the amplifier reduce the loop stability margin.Values of 50pF can be accomodated using the worst-case non-inverting unity gain rge closed loop gains or resistive isolation should be used if larger load capacitance must be driven by the amplifier.The bias network of the LM158establishes a drain current which is independent of the magnitude of the power supply voltage over the range of 3V DC to 30V DC .Output short circuits either to ground or to the positive power supply should be of short time duration.Units can be de-stroyed,not as a result of the short circuit current causing metal fusing,but rather due to the large increase in IC chip dissipation which will cause eventual failure due to exces-sive function temperatures.Putting direct short-circuits on more than one amplifier at a time will increase the total IC power dissipation to destructive levels,if not properly pro-tected with external dissipation limiting resistors in series with the output leads of the amplifiers.The larger value of output source current which is available at 25˚C provides a larger output current capability at elevated temperatures (see typical performance characteristics)than a standard IC op amp.The circuits presented in the section on typical applications emphasize operation on only a single power supply voltage.If complementary power supplies are available,all of the standard op amp circuits can be used.In general,introduc-ing a pseudo-ground (a bias voltage reference of V +/2)will allow operation above and below this value in single power supply systems.Many application circuits are shown which take advantage of the wide input common-mode voltage range which includes ground.In most cases,input biasing is not required and input voltages which range to ground can easily be accommodated.L M 158/L M 258/L M 358/L M 2904 8Connection DiagramsDIP/SO Package Metal Can Package00778702Top View00778701Top View8-Bump micro SMD00778755Top View(Bump Side Down)LM358BP micro SMD Marking Orientation LM2904IBP micro SMD Marking Orientation00778756Top View00778757Top ViewLM358TP micro SMD Marking Orientation LM2904ITP micro SMD Marking Orientation00778758Top View00778759Top ViewLM158/LM258/LM358/LM29049Ordering InformationPackage Temperature RangeNSC Drawing−55˚C to 125˚C−25˚C to 85˚C0˚C to 70˚C −40˚C to 85˚C SO-8LM358AM LM358AMX LM358M LM358MX LM2904M LM2904MXM08A8-Pin Molded DIP LM358AN LM358NLM2904NN08E8-Pin Ceramic DIPLM158AJ/883(Note 11)LM158J/883(Note 11)LM158JLM158AJLQML(Note 12)LM158AJQMLV(Note 12)J08ATO-5,8-Pin MetalCanLM158AH/883(Note 11)LM158H/883(Note 11)LM158AH LM158HLM158AHLQML(Note 12)LM158AHLQMLV(Note 12)LM258HLM358HH08C8-Bump microSMD LM358BP LM358BPX LM2904IBP LM2904IBPX BPA08AAB 0.85mm Thick 8-Bump microSMD Lead Free LM358TP LM358TPXLM2904ITP LM2904ITPXTPA08AAA 0.50mm Thick14-Pin CeramicSOICLM158AWG/883WG10ANote 11:LM158is available per SMD #5962-8771001LM158A is available per SMD #5962-8771002Note 12:See STD Mil DWG 5962L87710for Radiation Tolerant DevicesL M 158/L M 258/L M 358/L M 2904 10Typical Single-Supply Applications(V+=5.0V DC)Non-Inverting DC Gain(0V Output)00778706*R not needed due to temperature independent I IN00778707DC Summing Amplifier(V IN’S≥0V DC and V O≥0V DC)Power Amplifier00778708Where:V O=V1+V2−V3−V4(V1+V2)≥(V3+V4)to keep V O>0V DC00778709V O=0V DC for V IN=0V DCA V=10LM158/LM258/LM358/LM2904Typical Single-Supply Applications(V+=5.0VDC)(Continued)“BI-QUAD”RC Active Bandpass Filter00778710f o=1kHzQ=50A v=100(40dB)Fixed Current Sources00778711Lamp Driver00778712 LM158/LM258/LM358/LM294Typical Single-Supply Applications (V +=5.0V DC )(Continued)LED DriverCurrent Monitor0077871300778714*(Increase R1for I L small)V L ≤V +−2VDriving TTL Voltage Follower0077871500778717V O =V INPulse Generator00778716LM158/LM258/LM358/LM2904Typical Single-Supply Applications(V+=5.0VDC)(Continued)Squarewave Oscillator Pulse Generator0077871800778719Low Drift Peak Detector00778720 HIGH Z INLOW Z OUTLM158/LM258/LM358/LM294Typical Single-Supply Applications (V +=5.0V DC )(Continued)High Compliance Current SinkComparator with Hysteresis00778721I O =1amp/volt V IN (Increase R E for I O small)00778722Voltage Controlled Oscillator (VCO)00778723*WIDE CONTROL VOLTAGE RANGE:0V DC ≤V C ≤2(V +−1.5V DC )LM158/LM258/LM358/LM2904Typical Single-Supply Applications (V +=5.0V DC )(Continued)AC Coupled Inverting Amplifier00778724Ground Referencing a Differential Input Signal00778725L M 158/L M 258/L M 358/L M 2904Typical Single-Supply Applications (V +=5.0V DC )(Continued)AC Coupled Non-Inverting Amplifier00778726A v =11(As Shown)DC Coupled Low-Pass RC Active Filter00778727f o =1kHz Q =1A V =2LM158/LM258/LM358/LM2904Typical Single-Supply Applications (V +=5.0V DC )(Continued)Bandpass Active Filter00778728f o =1kHz Q =25High Input Z,DC Differential Amplifier00778729L M 158/L M 258/L M 358/L M 2904Typical Single-Supply Applications(V+=5.0VDC)(Continued)Photo Voltaic-Cell Amplifier Bridge Current Amplifier0077873000778733High Input Z Adjustable-GainDC Instrumentation Amplifier00778731LM158/LM258/LM358/LM2904Typical Single-Supply Applications (V +=5.0V DC )(Continued)Using Symmetrical Amplifiers to Reduce Input Current (General Concept)00778732Schematic Diagram(Each Amplifier)00778703L M 158/L M 258/L M 358/L M 2904Physical Dimensionsinches (millimeters)unless otherwise notedMetal Can Package (H)NS Package Number H08CCerdip Package (J)NS Package Number J08ALM158/LM258/LM358/LM290421Physical Dimensionsinches (millimeters)unless otherwise noted (Continued)SOIC Package (M)NS Package Number M08AMolded Dip Package (N)NS Package Number N08EL M 158/L M 258/L M 358/L M 2904 22LM158/LM258/LM358/LM2904 Physical Dimensions inches(millimeters)unless otherwise noted(Continued)Order Number LM158AWG/883NS Package Number WG10A23Physical Dimensionsinches (millimeters)unless otherwise noted (Continued)NOTES:UNLESS OTHERWISE SPECIFIED 1.EPOXY COATING2.63Sn/37Pb EUTECTIC BUMP3.RECOMMEND NON-SOLDER MASK DEFINED LANDING PAD.4.PIN A1IS ESTABLISHED BY LOWER LEFT CORNER WITH RESPECT TO TEXT ORIENTATION REMAINING PINS ARE NUMBERED COUNTERCLOCKWISE.5.XXX IN DRAWING NUMBER REPRESENTS PACKAGE SIZE VARIATION WHERE X 1IS PACKAGE WIDTH,X 2IS PACKAGE LENGTH AND X 3IS PACKAGE HEIGHT.6.REFERENCE JEDEC REGISTRATION MO-211,VARIATION BC.8-Bump micro SMDNS Package Number BPA08AAB X 1=1.285X 2=1.285X 3=0.850L M 158/L M 258/L M 358/L M 2904 24Physical Dimensionsinches (millimeters)unless otherwise noted (Continued)NOTES:UNLESS OTHERWISE SPECIFIED 1.EPOXY COATING2.RECOMMEND NON-SOLDER MASK DEFINED LANDING PAD.3.PIN A1IS ESTABLISHED BY LOWER LEFT CORNER WITH RESPECT TO TEXT ORIENTATION REMAINING PINS ARE NUMBERED COUNTERCLOCKWISE.4.XXX IN DRAWING NUMBER REPRESENTS PACKAGE SIZE VARIATION WHERE X 1IS PACKAGE WIDTH,X 2IS PACKAGE LENGTH AND X 3IS PACKAGE HEIGHT.5.REFERENCE JEDEC REGISTRATION MO-211,VARIATION BC.8-Bump micro SMD Lead Free NS Package Number TPA08AAA X 1=1.285X 2=1.285X 3=0.500National does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.For the most current product information visit us at .LIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION.As used herein:1.Life support devices or systems are devices or systems which,(a)are intended for surgical implant into the body,or (b)support or sustain life,and whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in a significant injury to the user.2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness.BANNED SUBSTANCE COMPLIANCENational Semiconductor manufactures products and uses packing materials that meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2)and the Banned Substances and Materials of Interest Specification (CSP-9-111S2)and contain no ‘‘Banned Substances’’as defined in CSP-9-111S2.Leadfree products are RoHS compliant.National Semiconductor Americas Customer Support CenterEmail:new.feedback@ Tel:1-800-272-9959National SemiconductorEurope Customer Support CenterFax:+49(0)180-5308586Email:europe.support@Deutsch Tel:+49(0)6995086208English Tel:+44(0)8702402171Français Tel:+33(0)141918790National Semiconductor Asia Pacific Customer Support CenterEmail:ap.support@National SemiconductorJapan Customer Support Center Fax:81-3-5639-7507Email:jpn.feedback@ Tel:81-3-5639-7560LM158/LM258/LM358/LM2904Low Power Dual Operational Amplifiers。
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AEROMET II规格（系列M型）.......................................... .................................... 3 SuperMet & ZeMax TM 规格（系列Z型）............................................ .................. 4 部分编号系统.............................................................................................................五 AEROMET II评分表（单台容量）系列M型....................................... ........... 6 AEROMET II评分表（双功能）系列型号M ....................................... ............. 8 SuperMet评分表（单台容量）系列Z型........................................ ............... 9 SuperMet评分表（双容量）系列Z型........................................ .............. 11 ZeMax TM 评分表（单台容量）系列Z型......................................... ........... 13 AEROMET II机械尺寸.............................................. .......................................... 15 SuperMet机械尺寸............................................... ........................................... 16 ZeMax TM 机械Dimensions............................................................................................17 附件 - 安装硬件.............................................. ............................................ 18
LM2904V中文资料
Industrial Temperature Range (– 25°C to +85°C) LM201A 0.075 2.0 10 10 50 1.0 0.5 General Purpose N/626, D/751
Internally Compensated
Commercial Temperature Range (0°C to +70°C) LF351 LF411C MC1436, C MC1741C MC1776C MC3476 MC34001 MC34001B MC34071 MC34071A MC34080B MC34081B MC34181 TL071AC TL071C TL081AC TL081C 200 pA 200 pA 0.04 0.5 0.003 0.05 200 pA 200 pA 0.5 500 nA 200 pA 200 pA 0.1 nA 200 pA 200 pA 200 pA 400 pA 10 2.0 10 6.0 6.0 6.0 10 5.0 5.0 3.0 1.0 1.0 2.0 6.0 10 6.0 15 10 10 12 15 15 15 10 10 10 10 10 10 10 10 10 10 10 100 pA 100 pA 10 200 3.0 25 100 pA 100 pA 75 50 100 pA 100 pA 0.05 50 pA 50 pA 100 pA 200 pA 25 25 70 20 100 50 25 50 25 50 25 25 25 50 25 50 25 4.0 8.0 1.0 1.0 1.0 1.0 4.0 4.0 4.5 4.5 16 8.0 4.0 4.0 4.0 4.0 4.0 13 25 2.0 0.5 0.2 0.2 13 13 10 10 55 30 10 13 13 13 13 ±5.0 +5.0 ±15 ±3.0 ±1.2 ±1.5 ±5.0 ±5.0 +3.0 +3.0 ±5.0 ±5.0 ±2.5 ±5.0 ±5.0 ±5.0 ±5.0 ±18 ±22 ±34 ±18 ±18 ±18 ±18 ±18 +44 +44 ±22 ±22 ±18 ±18 ±18 ±18 ±18 JFET Input JFET Input, Low Offset, Low Drift High Voltage General Purpose µPower, Programmable Low Cost, µPower, Programmable JFET Input JFET Input High Performance Single Supply Decompensated High Speed, JFET Input Low Power, JFET Input Low Noise, JFET Input Low Noise, JFET Input JFET Input JFET Input N/626, D/751 N/626, D/751 P1/626, D/751 P1/626, D/751 P1/626, D/751 P1/626 P/626, D/751 P/626, D/751 P/626, D/751 P/626, D/751 P/626, D/751 P/626, D/751 P/626 P/626 D/751 P/626 D/751
LM2904M中文资料
-
0.8 2.0
-
0.8 2.0
-
0.8 2.0 mA
RL = ∞, VCC = 5V
- 0.5 1.2 - 0.5 1.2 - 0.5 1.2 mA
Large Signal Voltage Gain
VCC = 15V,
GV RL= 2kΩ
50 100 - 25 100 - 25 100 - V/mV
元器件交易网
LM2904,LM358/LM358A,LM258/ LM258A
Dual Operational Amplifier
Features
• Internally Frequency Compensated for Unity Gain • Large DC Voltage Gain: 100dB • Wide Power Supply Range:
Differential Input Voltage
VI(DIFF)
-
- - VCC - - VCC -
- VCC V
Note: 1. This parameter, although guaranteed, is not 100% tested in production.
3
元器件交易网
- - 7.0 - - 9.0 - - 10.0 mV
Input Offset Voltage Drift
∆VIO/∆T RS = 0Ω
- 7.0 - - 7.0 - - 7.0 - µV/°C
Input Offset
IIO
Current
-
- - 100 - - 150 - 45 200 nA
Input Offset Current Drift
lm2904中文资料
LM2904包含两个具有高增益和内部频率补偿的独立双路运算放大器，适用于具有宽电源电压范围和双电源工作模式的单电源。
在推荐的工作条件下，电源电流与电源电压无关。
它的应用范围包括读出放大器，DC增益模块以及所有其他可由单个电源提供运算放大器的场合。
该警报器可以检测到人体发出的红外线。
当人们进入警报监视区域时，他们会发出警报声。
适用于家庭，办公室，仓库和实验室等重要场合的防盗报警器。
工作原则它由红外传感器，信号放大电路，电压比较器，延迟电路和音频报警电路组成。
当红外检测传感器IC1检测到从人体前方发出的红外信号时，微弱的电信号由IC1的引脚②输出，由晶体管VT1构成的第一级放大电路放大，然后输入到运算放大器IC2通过C2实现高增益和低噪声放大。
此时，IC2的引脚①输出的信号足够强。
IC3用作电压比较器，其第五引脚由R10和VD1提供参考电压。
当从IC2①的引脚①输出的信号电压到达IC3的引脚⑥时，比较两个输入端子的电压，然后IC3的引脚from从原始的高电平变为低电平。
IC4是警报延迟电路，R14和C6构成延迟电路，持续约1分钟。
当IC3的引脚low 变为低电平时，C6通过VD2放电，而IC4的引脚②变为低电平，与IC4的引脚③的参考电压进行比较。
当其低于参考电压时，IC4的引脚①变为高电平，VT2开启，并且蜂鸣器BL开启并发出警报声。
人体的红外信号消失后，IC3的引脚resume恢复高电平输出，此时VD2关闭。
由于C6两端的电压不能突然变化，因此请通过R14缓慢地给C6充电。
当C6两端的电压高于参考电压时，IC4的①引脚变为低电平，时间约为1分钟，即警报持续1分钟。
由VT3，R20和C8组成的启动延迟电路大约需要一分钟，其设置主要是为了防止用户在启动后立即发出警报，以便用户有足够的时间离开监视站点，同时，可以防止在停电后再次拨打电话时出现误报。
该器件由9-12 V直流电源供电，具有T降压，全桥U整流和C10滤波。
LM2904D的技术参数
开关电源电路图解析所谓开关电源，故名思议，就是这里有一扇门，一开门电源就通过，一关门电源就停止通过，那么什么是门呢，开关电源里有的采用可控硅，有的采用开关管，这两个元器件性能差不多，都是靠基极、（开关管）控制极（可控硅）上加上脉冲信号来完成导通和截止的，脉冲信号正半周到来，控制极上电压升高，开关管或可控硅就导通，由220V整流、滤波后输出的300V电压就导通，通过开关变压器传到次级，再通过变压比将电压升高或降低，供各个电路工作。
振荡脉冲负半周到来，电源调整管的基极、或可控硅的控制极电压低于原来的设置电压，电源调整管截止，300V电源被关断，开关变压器次级没电压，这时各电路所需的工作电压，就靠次级本路整流后的滤波电容放电来维持。
待到下一个脉冲的周期正半周信号到来时，重复上一个过程。
这个开关变压器就叫高频变压器，因为他的工作频率高于50HZ低频。
那么推动开关管或可控硅的脉冲如何获得呢，这就需要有个振荡电路产生，我们知道，晶体三极管有个特性，就是基极对发射极电压是0.65-0.7V是放大状态，0.7V以上就是饱和导通状态，-0.1V- -0.3V就工作在振荡状态，那么其工作点调好后，就靠较深的负反馈来产生负压，使振荡管起振，振荡管的频率由基极上的电容充放电的时间长短来决定，振荡频率高输出脉冲幅度就大，反之就小，这就决定了电源调整管的输出电压的大小。
那么变压器次级输出的工作电压如何稳压呢，一般是在开关变压器上，单绕一组线圈，在其上端获得的电压经过整流滤波后，作为基准电压，然后通过光电耦合器，将这个基准电压返回振荡管的基极，来调整震荡频率的高低，如果变压器次级电压升高，本取样线圈输出的电压也升高，通过光电耦合器获得的正反馈电压也升高，这个电压加到振荡管基极上，就使振荡频率降低，起到了稳定次级输出电压的稳定，太细的工作情况就不必细讲了，也没必要了解的那么细的，这样大功率的电压由开关变压器传递，并与后级隔开，返回的取样电压由光耦传递也与后级隔开，所以前级的市电电压，是与后级分离的，这就叫冷板，是安全的，变压器前的电源是独立的，这就叫开关电源。
LM2904N中文资料
PIN CONNECTIONS
Output A Inputs A VEE/Gnd
1 2 8 7
– + 3
4
VCC Output B Inputs B
–பைடு நூலகம்+ 5
6
(Top View)
ORDERING INFORMATION
Continuous 150 –55 to +125 °C °C °C Device LM2904D LM2904N LM2904VD LM2904VN LM258D LM258N LM358D LM358N Operating Temperature Range TA = –40° to +105°C Package SO–8 Plastic DIP TA = –40° to +125°C SO–8 Plastic DIP TA = –25° to +85°C SO–8 Plastic DIP TA = 0° to +70°C SO–8 Plastic DIP
LM358 Max Min Typ Max Min
LM2904 Typ Max Min
LM2904V Typ Max Unit U it
mV
Symbol S b l
VIO
Min
Typ
]
– – – ∆VIO/∆T –
2.0 – – 7.0
5.0 7.0 2.0 –
– – – –
2.0 – – 7.0
7.0 9.0 9.0 –
– – – –
2.0 – – 7.0
7.0 10 10 –
– – – –
– – – 7.0
– 13 10 – µV/°C
lm2904中文资料
lm2904中⽂资料LM2904概述Lm2904包括两个独⽴的⾼增益内部频率补偿双路运算放⼤器。
它适⽤于具有宽电源电压范围和双电源模式的单电源。
在建议的⼯作条件下，电源电流与电源电压⽆关。
它可⽤于传感器放⼤器，DC增益模块和其他可由单个电源供电的运算放⼤器。
Lm2904可以采⽤塑料封装的8引脚双列直插式和SMD封装。
LM2904中⽂数据汇总（lm2904引脚图和功能_内部结构与应⽤电路）LM2904功能内部频率补偿⾼直流增益（约100dB）单位增益带宽（约1MHz）宽电源电压范围：单电源（3-30V）；双电源（±1.5±15V）低功耗电流，适合电池供电低输⼊偏置电流低输⼊失调电压和电流宽共模输⼊电压范围，包括接地差模输⼊电压范围很宽，等于电源电压范围⼤输出电压摆幅（0⾄vcc-1.5v）LM2904中⽂数据汇总（lm2904引脚图和功能_内部结构与应⽤电路）LM2904应⽤电路（1）该警报器可以检测到⼈体发出的红外线。
当⼈进⼊警报监视区域时，它会发出警报声。
适⽤于家庭，办公室，仓库，实验室等重要场合的防盗报警器。
⼯作原则LM2904中⽂数据汇总（lm2904引脚图和功能_内部结构与应⽤电路）该设备的电路原理如图1所⽰。
它由红外传感器，信号放⼤器电路，电压⽐较器，延迟电路和声⾳报警电路组成。
当红外检测传感器IC1检测到从⼈体前⽅发出的红外信号时，微弱的电信号由IC1的②引脚输出，由晶体管VT1构成的第⼀级放⼤电路放⼤，然后输⼊到运算放⼤器IC2通过C2实现⾼增益和低噪声放⼤。
此时，IC 2（1）引脚输出的信号⾜够强。
IC3⽤作电压⽐较器。
参考电压由IC3第五个引脚上的R10和VD1提供。
当IC 2（1）的输出信号电压达到IC3的引脚6时，将⽐较两个输⼊端⼦的电压。
此时，IC3的引脚7从⾼电平变为低电平。
IC4是警报延迟电路，R14和C6构成延迟电路，时间约为1分钟。
当IC3的引脚（7）变为低电平时，C6通过VD2放电。
rohm LM2904MX DATA SHEET
(Contact address for overseas customers in Japan)
Yokohama
TEL : +81(45)476-9270 FAX : +81(045)476-9271
China / Hong Kong Shanghai Dilian Beijing
Tai+852(2)740-6262 TEL : +86(21)6279-2727 TEL : +86(411)8230-8549 TEL : +86(10)8525-2483
FAX : +852(2)375-8971 FAX : +86(21)6247-2066 FAX : +86(411)8230-8537 FAX : +86(10)8525-2489
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Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
Am29LV641DU121RPCIN资料
GENERAL DESCRIPTION
The Am29LV640DU/Am29LV641DU is a 64 Mbit, 3.0 Volt (3.0 V to 3.6 V) single power supply flash memory devices organized as 4,194,304 words. Data appears on DQ0-DQ15. The device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed in standard EPROM programmers. Access times of 90 and 120 ns are available for applications where VIO ≥ VCC. Access times of 100 and 120 ns are available for applications where VIO < VCC. The device is offered in 48-pin TSOP, 56-pin SSOP, 63-ball Fine-Pitch BGA and 64-ball Fortified BGA packages. To eliminate bus contention each device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) control
LM2904应用
L M2904应用(总2页) -CAL-FENGHAI.-(YICAI)-Company One1
-CAL-本页仅作为文档封面，使用请直接删除
电路图如下，电源输入是14V稳定,第一级运放输入电压out1为1~4v，运放后输出out2为2~8v。
out2作为左端电压跟随器的输入，DA-OUT为输出。
在实际使用过程中，由于其他电线干扰会在DA-OUT和地之间（1,4脚）产生1.2v左右的交流电压。
发现芯片经常损坏，症状有两个：1.跟随器输出不随输入变化，固定在8v，12v等等。
2. 1,4脚击穿短路。
请大家分析下情况，以及如何改进电路，谢谢！收起
外部接的负载几兆欧姆，测电流只有5uA
一 LM2904输出电流为40ma，不知道你带的负载电流多大。
电容C86现在是103，你加大点，改为104的试试。
还建议你换下芯片，LM2904的电源电压和差动输入电压为26V，你用LM258试试，LM258的电源电压和差动输入电压为32V。
两种芯片引脚排列一样，LM258的工作温度范围和
LM2904差不多。
你要是在0 ~ 70度应用可以，你可用LM358.
二首先在8脚VCC近芯片管脚端加上一个高频去耦电容，不知道你信号频率，就选1000pF~0.1uF的瓷片电容差不多了（0603封装，耐压50V就OK），然后再并一个容值大的带极性电容，10uF以上的钽电容或电解电容都行，注意耐压值的选取和极性，这个是必须的。
你整个电路没有直流耦合，感觉是直流偏置大了引起电路烧毁。
你最好画下你各个点的输入波形，好帮助你分析问题所在。
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PACKAGING INFORMATIONOrderable Device Status(1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)5962-87710012A ACTIVE LCCC FK 201None POST-PLATE Level-NC-NC-NC 5962-8771001PA ACTIVE CDIP JG 81None A42SNPB Level-NC-NC-NC 5962-87710022A ACTIVE LCCC FK 201None POST-PLATE Level-NC-NC-NC 5962-8771002PA ACTIVE CDIP JG 81None A42SNPB Level-NC-NC-NC LM158AFKB ACTIVE LCCC FK 201None POST-PLATE Level-NC-NC-NCLM158AJG ACTIVE CDIP JG 81None A42SNPB Level-NC-NC-NC LM158AJGB ACTIVE CDIP JG 81None A42SNPB Level-NC-NC-NC LM158FKB ACTIVE LCCC FK 201None POST-PLATE Level-NC-NC-NCLM158JG ACTIVE CDIP JG 81None A42SNPB Level-NC-NC-NC LM158JGB ACTIVE CDIP JG 81None A42SNPB Level-NC-NC-NC LM258AD ACTIVE SOIC D 875Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LM258ADGKR ACTIVE MSOP DGK 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR LM258ADR ACTIVE SOIC D 82500Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LM258AP ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU Level-NC-NC-NC LM258D ACTIVE SOIC D 875Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LM258DGKR ACTIVE MSOP DGK 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR LM258DR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM258P ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU Level-NC-NC-NC LM2904AVQDR ACTIVE SOIC D 82500Pb-Free (RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIM LM2904AVQPWRACTIVE TSSOP PW 82000None CU NIPDAU Level-1-250C-UNLIM LM2904D ACTIVE SOIC D 875Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LM2904DGKR ACTIVE MSOP DGK 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR LM2904DR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2904P ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU Level-NC-NC-NC LM2904PSR ACTIVE SO PS 82000Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LM2904PW ACTIVE TSSOP PW 8150Pb-Free (RoHS)CU NIPDAU Level-1-250C-UNLIM LM2904PWLE OBSOLETE TSSOP PW 8None Call TI Call TILM2904PWR ACTIVE TSSOP PW 82000Pb-Free (RoHS)CU NIPDAU Level-1-250C-UNLIM LM2904QD OBSOLETE SOIC D 8None Call TI Call TILM2904QDROBSOLETESOICD8Pb-Free (RoHS)CU NIPDAULevel-2-250C-1YEAR/Level-1-235C-UNLIMPACKAGE OPTION ADDENDUM4-Mar-2005Addendum-Page 1元器件交易网Orderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)LM2904QP OBSOLETE PDIP P8None Call TI Call TILM2904VQDR ACTIVE SOIC D82500Pb-Free(RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIMLM2904VQPWR ACTIVE TSSOP PW82000None CU NIPDAU Level-1-250C-UNLIMLM358AD ACTIVE SOIC D875Pb-Free(RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIMLM358ADGKR ACTIVE MSOP DGK82500Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEARLM358ADR ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358AP ACTIVE PDIP P850Pb-Free(RoHS)CU NIPDAU Level-NC-NC-NCLM358APW ACTIVE TSSOP PW8150Pb-Free(RoHS)CU NIPDAU Level-1-250C-UNLIMLM358APWR ACTIVE TSSOP PW82000Pb-Free(RoHS)CU NIPDAU Level-1-250C-UNLIMLM358D ACTIVE SOIC D875Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358DGKR ACTIVE MSOP DGK82500Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEARLM358DR ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358P ACTIVE PDIP P850Pb-Free(RoHS)CU NIPDAU Level-NC-NC-NCLM358PSLE OBSOLETE SO PS8None Call TI Call TILM358PSR ACTIVE SO PS82000Pb-Free(RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIMLM358PW ACTIVE TSSOP PW8150Pb-Free(RoHS)CU NIPDAU Level-1-250C-UNLIM LM358PWLE OBSOLETE TSSOP PW8None Call TI Call TILM358PWR ACTIVE TSSOP PW82000Pb-Free(RoHS)CU NIPDAU Level-1-250C-UNLIM(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan-May not be currently available-please check /productcontent for the latest availability information and additional product content details.None:Not yet available Lead(Pb-Free).Pb-Free(RoHS):TI's terms"Lead-Free"or"Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all6substances,including the requirement that lead not exceed0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Green(RoHS&no Sb/Br):TI defines"Green"to mean"Pb-Free"and in addition,uses package materials that do not contain halogens, including bromine(Br)or antimony(Sb)above0.1%of total product weight.(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDECindustry standard 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