IRFR9110中文资料

W W/oC oC
oC oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
元器件交易网
IRFR9110, IRFU9110
Data Sheet July 1999 File Number
4001.3
3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs
These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17541.
Features
• 3.1A, 100V • rDS(ON) = 1.200Ω • Temperature Compensating PSPICE™ Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
oC/W oC/W
Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current
Gate to Source Leakage Current On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate to Drain Charge Gate to Source Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
S
Packaging
JEDEC TO-251AA
SOURCE DRAIN GATE
JEDEC TO-252AA
GATE SOURCE
DRAIN (FLANGE)
DRAIN (FLANGE)
4-77
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. or 407-727-9207 | Copyright © Intersil Corporation 1999
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250µA, VGS = 0V VGS = VDS, ID = 250µA VDS = -100V, VGS = 0V VGS = ±20V ID = 1.9A, VGS = -10V VDD = -50V, ID = 4A RL = 11Ω, VGS = -10V RGS = 24Ω TC = 25oC TC = 150oC MIN -100 -2.0 VGS = 0 to -10V VDD = -80V, ID = 3.1A, RL = 25.8Ω VDS = -25V, VGS = 0V f = 1MHz TYP 10 27 15 17 290 94 18 MAX -4.0 -1 -50 100 1.200 50 50 8.7 4.1 2.2 5.00 100 UNITS V V µA µA nA Ω ns ns ns ns ns ns nC nC nC pF pF pF
4-78Βιβλιοθήκη 元器件交易网IRFR9110, IRFU9110 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 ID , DRAIN CURRENT (A) 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150
Unless Otherwise Specified
-3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC)
IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg Qgd Qgs CISS COSS CRSS RθJC RθJA
Source to Drain Diode Ratings and Specifications
PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL VSD trr QRR ISD = -3.1A ISD = -4.0A, dISD/dt = -100A/µs TEST CONDITIONS MIN TYP 105 0.51 MAX -5.5 160 1.0 UNITS V ns µC
Symbol
D
Ordering Information
PART NUMBER IRFR9110 IRFU9110 PACKAGE TO-252AA TO-251AA BRAND IF9110 IF9110
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., IRFR91109A.
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg